Faculty Profiles - AMANO, Hiroshi

Papers - AMANO, Hiroshi

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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 866 - 869 2017.6

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7+0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices.

DOI： 10.1016/j.jcrysgro.2017.01.031

Web of Science

Scopus

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics Vol. 56 page： 061002 2017.5

III-nitride core-shell nanorod array on quartz substrates

Si-Young Bae, Jung-Wook Min, Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda, Hiroshi Amano

SCIENTIFIC REPORTS Vol. 7 page： 45345 2017.3

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：NATURE PUBLISHING GROUP

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

DOI： 10.1038/srep45345

Investigation of reduction of light absorption at p-side toward UV emitting devices

Yasuda Toshiki, Kuwabara Natsuko, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts Vol. 2017.1 ( 0 ) page： 3400 - 3400 2017.3

Effect of thermal treatment on the quantu efficiency of NEA-InGaN photocatode

Kashima Masahiro, Iijima Hokuto, Nishitani Tomohiro, Sato Daiki, Honda Yoshio, Amano Hiroshi, Meguro Takashi

JSAP Annual Meetings Extended Abstracts Vol. 2017.1 ( 0 ) page： 1554 - 1554 2017.3

A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

Nagasawa Yosuke, Yamada Kiho, Nagai Shouko, Hirano Akira, Ipponmatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

JSAP Annual Meetings Extended Abstracts Vol. 2017.1 ( 0 ) page： 1136 - 1136 2017.3

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 10 ( 2 ) 2017.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

We investigated polarization doping for hole generation in abrupt and graded GaN/Al0.7Ga0.3N interfaces on Al0.99Ga0.01N templates. The abrupt interface exhibited hole generation, whereas the graded interface exhibited electron generation. In the graded AlxGa1%xN (x = 0.65-0), a graded part with an AlN mole fraction ranging from 0.2 to 0 showed a large relaxation. Theoretical estimation revealed that this part contained positive polarization charges, accumulating electrons. Via Mg doping in the graded AlGaN layer, we obtained a high hole concentration of 3 ' 1013cm%2. These results indicate that understanding the relaxation conditions in the graded layer is indispensable for polarization doping.

DOI： 10.7567/APEX.10.025502

Web of Science

Scopus

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template Reviewed

Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

Applied Physics Express Vol. 10 page： 025502 2017.1

From the dawn of gan-based light-emitting devices to the present day

Amano H.

Handbook of Solid-State Lighting and LEDs page： 3-12 2017.1

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching Reviewed

Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

Physica Status Solidi b Vol. 253 page： 1700387(1-7) 2017

Language：English Publishing type：Research paper (scientific journal)

A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas
etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching,
high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method,
before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7E7 cm2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

DOI： 10.1002/pssb.201700387

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) page： . 2017

Progress and prospect of growth of wide-band-gap group III nitrides

Hiroshi Amano

Topics in Applied Physics Vol. 133 page： 1 - 9 2017

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Springer Verlag

GaAs, InP, and their related compound semiconductors can be grown on native substrates, whereas such growth was not possible for group III nitride semiconductors in the 1970s and 1980s. Despite this drawback, researchers were able to use novel functions of group III nitride semiconductors by growing their thin films on nonnative substrates such as sapphire SiC and Si.

DOI： 10.1007/978-981-10-3755-9_1

Web of Science

Scopus

researchmap

From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

Amano Hiroshi

HANDBOOK OF SOLID-STATE LIGHTING AND LEDS page： 3 - 11 2017

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy Reviewed

Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

Japanese Journal of Applied Physics Vol. 56 page： 015504 2016.12

Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed

Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunaria, Akira Tamura, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 454 page： 114-120 2016.11

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE Reviewed

Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth Vol. 447 page： 55-61 2016.8

Language：English Publishing type：Research paper (scientific journal)

The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology.

DOI： 10.1016/j.jcrysgro.2016.05.008

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed

Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

Japanese Journal of Applied Physics Vol. 55 page： 082101/1-7 2016.8

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy Reviewed

Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

PHYSICAL REVIEW Vol. B94 page： 045206/1-8 2016.7

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics Vol. 55 page： 05FJ02/1-3 2016.5

Language：English Publishing type：Research paper (scientific journal)

Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

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Papers - AMANO, Hiroshi