講演・口頭発表等 - 坂下 満男
-
A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing 招待有り 国際会議
Masashi Kurosawa, Akio Ohta, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日
-
Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates 国際会議
Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日
-
Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate 国際会議
Yoshiki Kato, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月15日
-
Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers 招待有り 国際会議
Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita
3rd Nucleation and Growth Research Conference (NGRC) 2023年11月10日
-
Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate 国際会議
Taichi Kabeya, Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY 2023年10月25日
-
Epitaxial Growth Technique for Si1-xSnx Binary Alloy Thin Films 招待有り 国際会議
Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
244th ECS Meeting 2023年10月10日
-
Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control 国際会議
Tatsuma Hiraide, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
2023 International Conference on Solid State Devices and Materials 2023年9月7日
-
Experimental observation of negative differential resistance in GeSn/GeSiSn double barrier structure toward resonant tunneling diode applications 国際会議
Shuto Ishimoto, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama
2023 International Conference on Solid State Devices and Materials 2023年9月7日
-
Optoelectronic properties of Ge1−xSnx/high-Si-content SiyGe1−y− zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing 国際会議
Shigehisa Shibayama, Shiyu Zhang, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
2023 International Conference on Solid State Devices and Materials 2023年9月7日
-
Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1-x-ySixSny layers 国際会議
Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa
2023 International Conference on Solid State Devices and Materials 2023年9月7日
-
Giant thermoelectric power of n-type Si1-xSnx layers grown on FZ-Si(001) substrates 国際会議
Tatsuki Oiwa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa
2023 International Conference on Solid State Devices and Materials 2023年9月7日
-
Heteroepitaxial Growth of High Substitutional Sn-content Ge1−xSnx Layer Lattice-matched on InP Substrate 国際会議
Osamu Nakatsuka, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita
The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings 2023年5月22日
-
Low-temperature Thermoelectric Properties of GeSn Alloys Films
M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka
The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings 2023年5月22日
-
Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications 招待有り 国際会議
Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, and Mitsuo Sakashita
2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 2023年5月15日
-
Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications 招待有り 国際会議
M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023) 2023年3月8日
-
Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications 招待有り 国際会議
S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月24日
-
Arising ferroelectric properties in ZrO2 thin film down to 4 nm 国際会議
S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日
-
Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers 国際会議
T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日
-
Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation 国際会議
K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月24日
-
Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector 国際会議
K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日