Faculty Profiles - UCHIDA Giichiro

写真a

UCHIDA Giichiro

Organization

Graduate School of Engineering Electronics 1 Professor

Undergraduate School

School of Engineering Electrical Engineering, Electronics, and Information Engineering

Research Interests 11

電解質ナノ粒子
異材接合
微粒子プラズマ
太陽電池
大気圧プラズマ
半導体ナノ材料
プラズマ理工学
プラズマ応用
プラズマプロセス
プラズマエレクトロニクス
Liイオン電池

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Research Areas 6

Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric/electronic material engineering
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electronic devices and equipment
Nanotechnology/Materials / Composite materials and interfaces
Nanotechnology/Materials / Thin-film surfaces and interfaces
Energy Engineering / Basic plasma science
Energy Engineering / Applied plasma science

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Research History 9

Meijo University

2022.4 - 2026.3
Meijo University Faculty of Science and Technology, Department of Electrical and Electronic Engineering Professor

2019.4 - 2026.3
Osaka University Joining and Welding Research Institute Associate Professor

2013.8 - 2019.3
Kyushu University Faculty of Information Science and Electrical Engineering Assistant Professor

2010.3 - 2013.7
Hiroshima University Graduate School of Advanced Sciences of Matter Endowed Chair Assistant Professor

2007.4 - 2010.2
Hiroshima University Graduate School of Advanced Sciences of Matter

2006.12 - 2007.3
The University of Tokyo Institute of Industrial Science

2005.1 - 2006.11
マックス・プランク地球外物理学研究所(ドイツガルヒン) 博士研究員

2003.4 - 2004.12
National Institute for Fusion Science

2001.4 - 2003.3

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Education 3

Tohoku University Graduate School of Engineering Department of Electrical and Communication Engineering

1998.4 - 2001.3
Tohoku University Graduate School of Engineering Department of Electronic Engineering

1996.4 - 1998.3
Tohoku University Faculty of Engineering

1992.4 - 1996.3

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Professional Memberships 6

静電気学会
電気化学会
日本ＭＲＳ
応用物理学会
プラズマ・核融合学会
IEEE(米国電気電子学会)

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Committee Memberships 17

名城大学特任教授

2026.6
ISPlasma2026国際会議実行委員長

2026.3

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Committee type：Other
応用物理学会代議員

2026.2

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Committee type：Academic society
プラズマ・核融合学会代議員

2025.4

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Committee type：Academic society
第34回日本MRS年次大会組織委員長

2024.12

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Committee type：Academic society
日本学術振興会DXプラズマプロセス委員会企画運営委員

2024.4
プラズマ・核融合学会総務委員

2024.4
応用物理学会プラズマエレクトロニク分科会幹事

2024.4 - 2026.3
第33回日本MRS年次大会実行委員長

2023.11
大阪大学招へい教授

2020.10
日本MRS 理事

2019.6

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Committee type：Academic society
九州大学客員教授

2019.4

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Committee type：Other
応用物理学会機関誌企画・編集委員会委員

2018.4 - 2020.3

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Committee type：Academic society
文部科学省研究振興局学術調査官

2017.8 - 2019.7

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Committee type：Academic society
プラズマ・核融合学会編集委員会委員

2013.7 - 2015.6

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Committee type：Academic society
プラズマ・核融合学会代議員

2010.4 - 2012.3

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Committee type：Academic society
応用物理学会プラズマエレクトロニクス分科会幹事

2010.4 - 2012.3

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Committee type：Academic society

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Awards 10

第26回プラズマ材料科学賞(奨励部門賞)

2025.1 名古屋大学低温プラズマ科学研究センター大容量安定なLiイオン電池作製プラズマプロセスに関する研究

内田儀一郎
接合科学共同利用・共同研究賞(令和6年度)

2024.9 大阪大学接合科学研究所高密度RFプラズマジェットを用いた高強度金属/樹脂接合技術の開発

内田儀一郎, 都甲将, 竹中弘祐, 節原裕一
第22回プラズマエレクトロニクス賞

2024.3 応用物理学会プラズマエレクトロニクス分科会

内田儀一郎, 益本幸泰, 榊原幹人, 池邊由美子, 小野晋次郎, 古閑一憲, 小澤隆弘
Best Review Paper賞

2021.4 （一社）スマートプロセス学会

内田儀一郎, 池田純一郎, 竹中弘祐, 節原裕一
Best Presentation Award, 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials

2021.3

Giichiro Uchida
Best Presentation Award

2017.3 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials

Giichiro Uchida
Participants' Poster Prize

2016.10 6th International Conference on Plasma Medicine

Giichiro Uchida
Young Scientist Award Gold

2015.9 The 10th Asian-European International Conference on Plasma Surface Engineering

Giichiro Uchida
第9回プラズマエレクトロニクス賞

2011.3 応用物理学会プラズマエレクトロニクス分科会

Giichiro Uchida
第19回日本MRS学術シンポジウム奨励賞

2010.1 The Materials Research Society of Japan

Giichiro Uchida

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Papers 232

Enhanced bonding strength of Ti-6Al-4 V/PEEK hybrids via atmospheric pressure plasma treatment: influence of surface functionalization and oxidative modification Reviewed Open Access

Kosuke Takenaka, Shunsho Shigemori, Masaya Shimabukuro, Toshiya Matsui, Susumu Toko, Giichiro Uchida, Masakazu Kawashita, Yuichi Setsuhara

The International Journal of Advanced Manufacturing Technology Vol. 144 page： 5053 - 5069 2026.4

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Language：English Publishing type：Research paper (scientific journal) Publisher：Springer Science and Business Media LLC

DOI： 10.1007/s00170-026-18121-6

Open Access

Web of Science

Other Link： https://link.springer.com/article/10.1007/s00170-026-18121-6
Effect of surface treatment using non-thermal atmospheric pressure plasma jet on dissimilar material direct joining using Polyetheretherketone Reviewed Open Access

Kosuke Takenaka, Soutaro Nakamoto, Masaya Shimabukuro, Akiya Jinda, Ryosuke Koyari, Shunsho Shigemori, Kouki Ueno, Susumu Toko, Giichiro Uchida, Masakazu Kawashita, Yuichi Setsuhara

Surfaces and Interfaces Vol. 79 page： 108187 2025.12

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.surfin.2025.108187

Open Access
Effect of Atmospheric Pressure Nonequilibrium Plasma Pretreatment of Polyethylene/Polypropylene on Epoxy Adhesively Bonded Joints Reviewed Open Access

Kosuke Takenaka, Ryosuke Koyari, Shunsho Shigemori, Giichiro Uchida, Yuichi Setsuhara

Plasma Processes and Polymers Vol. 22 ( 10 ) page： e70072 2025.10

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1002/ppap.70072

Open Access

Web of Science
Amorphous Ge/LiAlGePO composite anodes with a multistacking structure developed via co-sputtering for high-capacity Li+-ion batteries Reviewed

Advanced Materials Technologies Vol. 10 ( 11 ) page： 2401523 2025.6

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Authorship：Last author

DOI： 10.1002/admt.202401523

Web of Science

Scopus
Nanoporous Helium–Silicon Co‐Deposition Thin Film via Plasma‐Assisted Process for Lithium‐Ion‐Battery Anodes Reviewed Open Access

Shin Kanejita, Giichiro Uchida, Hiromasa Tanaka, Kiho Tabata, Yuta Yamamoto, Noriyasu Ohno

Advanced Energy and Sustainability Research Vol. 6 ( 3 ) page： 2400300 2025.3

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DOI： 10.1002/aesr.202400300

Open Access

Web of Science

Scopus
Plasma-Catalyzed Sustainable Nanostructured Carbon Synthesis: Advancing Chemical-Looping CO2 Fixation Reviewed Open Access

Chen, XZ; Nishina, Y; Uchida, G; Nozaki, T

ACS ENERGY LETTERS Vol. 9 ( 12 ) page： 6072 - 6080 2024.11

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Publisher：ACS Energy Letters

Clean energy-driven high-flux CO-to-C conversion has become increasingly urgent following the recent validation of CO<inf>2</inf>-to-CO-to-C chemical looping. This approach addresses rising net carbon emissions and the growing demand for green nanocarbons, but the CO-to-C conversion limits process capacity. Meanwhile, sustainable nanocarbon production via mainstream thermal catalytic chemical vapor deposition of hydrocarbons faces bottlenecks. CO<inf>2</inf> is released during thermal reactions, and the process is hindered by the high temperatures, gas dilution requirements, rapid catalyst deactivation, and inconsistent carbon quality. Here, we report a strategy using cost-efficient iron oxides, combining nonthermal plasma, the Boudouard reaction, and fluidized bed technology for electrified high-flux CO-to-C conversion. This process integrates high carbon yield (>228.9 g<inf>C</inf> g<inf>Fe</inf>-1) and synthesis rate (30.2 g<inf>C</inf> g<inf>Fe</inf>-1 h-1), operates an electrically driven mode at a reduced temperature (577 °C), avoids catalyst deactivation (>11 h), requires no gas dilution, and produces high-quality nanocarbons (nanofibers/nanocoils), demonstrating its industrial potential for sustainable nanocarbon synthesis and CO<inf>2</inf> fixation.

DOI： 10.1021/acsenergylett.4c02660

Open Access

Web of Science

Scopus
Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2024 (ISPlasma2024/IC-PLANTS2024/APSPT-13) Reviewed

Ohta, T; Tanaka, H; Kojima, H; Uchida, G; Tanaka, Y; Ogawa, D; Nakatsuka, O; Naritsuka, S; Sato, H; Takeda, K; Akatsuka, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 11 ) 2024.11

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DOI： 10.35848/1347-4065/ad85eb

Web of Science
Influence of pre-treatment with non-thermal atmospheric pressure plasma on bond strength of TP340 titanium-PEEK direct bonding Reviewed Open Access

Kosuke Takenaka, Soutaro Nakamoto, Ryosuke Koyari, Akiya Jinda, Susumu Toko, Giichiro Uchida, Yuichi Setsuhara

The International Journal of Advanced Manufacturing Technology Vol. 134 ( 3-4 ) page： 1637 - 1644 2024.9

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Publishing type：Research paper (scientific journal) Publisher：Springer Science and Business Media LLC

Abstract

Direct bonding of a TP340 titanium to PEEK by hot pressing via pre-treatment of non-thermal atmospheric pressure plasma jet has been demonstrated. The plasma irradiation effect on the bonding surface on the bond strength after hot pressing was investigated. The tensile shear strength of TP340-PEEK joined by hot pressing after plasma pre-treatment was measured by comparing specimens bonded using conventional hot pressing and those bonded using adhesives. The plasma treatment to the TP340 side resulted in the formation of TiO2, which is chemically fed to oxide formation due to the irradiation of oxygen radicals generated by the plasma, resulting in a bond strength of less than 1 MPa, similar to the bond strength of the untreated specimens. The plasma irradiation effect on the PEEK side on the bond strength of TP340-PEEK bonded samples was also investigated. The bonding strength was increased by plasma irradiation to PEEK. As the plasma irradiation time was increased, the bonding strength gradually increased to 9.2 MPa, which is about 19 times higher than the bonding strength without plasma irradiation. These results suggest that oxygen radicals in the atmospheric pressure RF plasma jet produced oxygen-containing surface functional groups on the PEEK surface, which increased the strength of the TP340-PEEK direct joining.

DOI： 10.1007/s00170-024-14160-z

Open Access

Web of Science

Scopus

Other Link： https://link.springer.com/article/10.1007/s00170-024-14160-z/fulltext.html
Development of nanostructured Ge/C anodes with a multistacking layer fabricated via Ar high-pressure sputtering for high-capacity Li+-ion batteries Reviewed Open Access

Tomoki Omae, Teruya Yamada, Daiki Fujikake, Takahiro Kozawa, Giichiro Uchida

Applied Physics Express Vol. 17 ( 2 ) page： 026001 2024.2

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Authorship：Last author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.35848/1882-0786/ad2785

Open Access

Web of Science

Scopus
Improving bonding strength by non-thermal atmospheric pressure plasma-assisted technology for A5052/PEEK direct joining Reviewed Open Access

Kosuke Takenaka, Akiya Jinda, Soutaro Nakamoto, Ryosuke Koyari, Susumu Toko, Giichiro Uchida, Yuichi Setsuhara

The International Journal of Advanced Manufacturing Technology Vol. 130 ( 1-2 ) page： 111 - 146 2024.1

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Publishing type：Research paper (scientific journal) Publisher：Springer Science and Business Media LLC

Abstract

The direct bonding of A5052 aluminum (Al) alloy to the engineering polymer poly(ether ether ketone) (PEEK) using an atmospheric pressure plasma-assisted process was demonstrated. The effect of plasma irradiation on the bonding surface of metal resin on the bonding strength following thermal press fitting method was investigated. Specimens bonded by plasma irradiation on the PEEK surface only showed a high tensile shear stress of 15.5 MPa. With increasing plasma irradiation time, the bond strength of the samples bonded to the PEEK surface by plasma irradiation increased. The increase in the bond strength between metals and polymers following direct bonding is caused by the addition of oxygen functional groups on the polymer. In contrast, specimens in which only the Al was exposed to the plasma showed a decrease in bond strength compared with unirradiated samples. This reduction in bond strength is attributed to the forming magnesium oxide, which forms in the early stages of participation due to plasma irradiation.

DOI： 10.1007/s00170-023-12747-6

Open Access

Web of Science

Scopus

Other Link： https://link.springer.com/article/10.1007/s00170-023-12747-6/fulltext.html
Influence of pre-treatment using non-thermal atmospheric pressure plasma jet on aluminum alloy A1050 to PEEK direct joining with hot-pressing process Reviewed Open Access

Kosuke Takenaka, Akiya Jinda, Soutaro Nakamoto, Ryosuke Koyari, Susumu Toko, Giichiro Uchida, Yuichi Setsuhara

The International Journal of Advanced Manufacturing Technology Vol. 130 ( 3-4 ) page： 1925 - 1933 2024.1

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Publishing type：Research paper (scientific journal) Publisher：Springer Science and Business Media LLC

Abstract

Aluminum alloy A1050 to polyetheretherketone (PEEK) direct joining with hot-pressing process via pre-treatment using non-thermal atmospheric pressure plasma jet has been performed. The effect of plasma irradiation on the tensile shear strength of A1050-PEEK direct bonded specimens joined by a combination of hot-pressing process and pre-plasma treatment using non-thermal atmospheric pressure plasma jet was investigated. A1050-PEEK bonded samples with plasma-treated PEEK only showed high tensile shear stress of 13.4 MPa. This increase in tensile shear strength is attributed to the addition of oxygen functional groups on the surface of the PEEK by reactive oxygen species produced by the plasma jet.

DOI： 10.1007/s00170-023-12827-7

Open Access

Web of Science

Scopus

Other Link： https://link.springer.com/article/10.1007/s00170-023-12827-7/fulltext.html
中圧低温プラズマスパッタリングを用いたGeナノポーラス膜の制御と高容量Liイオン電池負極への応用 Reviewed

内田儀一郎

スマートプロセス学会誌 Vol. 13 ( 1 ) page： 13 - 17 2024.1

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Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
Direct bonding of stainless steel and PEEK using non-thermal atmospheric pressure plasma-assisted joining technology Reviewed

Kosuke Takenaka, Akiya Jinda, Soutaro Nakamoto, Susumu Toko, Giichiro Uchida, Yuichi Setsuhara

Journal of Manufacturing Processes Vol. 105 page： 276 - 281 2023.11

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Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier BV

DOI： 10.1016/j.jmapro.2023.09.049

Web of Science

Scopus
Advanced Plasma Science and its Applications for Nitrides and Nanomaterials Reviewed

Uchida, G; Itoh, T

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SN ) 2023.11

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DOI： 10.35848/1347-4065/acfc50

Web of Science
Nanostructure and doping effects of a-Si:H and μc-Si:H anode in lithium-ion battery performance Reviewed

Shota Nunomura, Giichiro Uchida

Materials Letters Vol. 349 page： 134777 2023.10

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Authorship：Last author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.matlet.2023.134777

Web of Science

Scopus
Single-step fabrication of fibrous Si/Sn composite nanowire anodes by high-pressure He plasma sputtering for high-capacity Li-ion batteries Reviewed Open Access

Giichiro Uchida, Kodai Masumoto, Mikito Sakakibara, Yumiko Ikebe, Shinjiro Ono, Kazunori Koga, Takahiro Kozawa

Scientific Reports Vol. 13 ( 1 ) page： 14280 2023.9

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：Springer Science and Business Media LLC

Abstract

To realize high-capacity Si anodes for next-generation Li-ion batteries, Si/Sn nanowires were fabricated in a single-step procedure using He plasma sputtering at a high pressure of 100–500 mTorr without substrate heating. The Si/Sn nanowires consisted of an amorphous Si core and a crystalline Sn shell. Si/Sn composite nanowire films formed a spider-web-like network structure, a rod-like structure, or an aggregated structure of nanowires and nanoparticles depending on the conditions used in the plasma process. Anodes prepared with Si/Sn nanowire films with the spider-web-like network structure and the aggregated structure of nanowires and nanoparticles showed a high Li-storage capacity of 1219 and 977 mAh/g, respectively, for the initial 54 cycles at a C-rate of 0.01, and a capacity of 644 and 580 mAh/g, respectively, after 135 cycles at a C-rate of 0.1. The developed plasma sputtering process enabled us to form a binder-free high-capacity Si/Sn-nanowire anode via a simple single-step procedure.

DOI： 10.1038/s41598-023-41452-3

Open Access

Web of Science

Scopus

PubMed
Analysis of oxygen-based species introduced during plasma assisted reactive processing of a-IGZO films Reviewed Open Access

Kosuke Takenaka, Hiroyuki Hirayama, Masashi Endo, Susumu Toko, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 62 ( SL ) page： SL1018 2023.9

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.35848/1347-4065/acdb7e

Web of Science

Scopus
Fabrication of amorphous LiPON, LiAlGePO, and GeSn films in low-temperature plasma sputtering process for all-solid-state Li+-ion battery Reviewed Open Access

Giichiro Uchida, Yuma Habu, Junki Hayashi, Kenta Nagai, Yumiko Ikebe

Vol. 62 ( SL ) page： SL1010-1 - SL1010-9 2023.9

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.35848/1347-4065/acd55d

Web of Science

Scopus
Analysis of residual oxygen during a-IGZO thin film formation by plasma-assisted reactive sputtering using a stable isotope Reviewed

Kosuke Takenaka, Masashi Endo, Hiroyuki Hirayama, Susumu Toko, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Vacuum Vol. 215 page： 112227 2023.9

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.vacuum.2023.112227

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Scopus
Plasma processing technique by combination of plasma-assisted reactive sputtering and plasma annealing for uniform electrical characteristics of InGaZnO thin film transistors formed on large-area substrates Reviewed Open Access

Kosuke Takenaka, Tomoki Yoshitani, Masashi Endo, Hiroyuki Hirayama, Susumu Toko, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 62 ( SI ) page： SI1005/1 - SI1005/9 2023.7

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Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

The homogeneous formation of high-mobility oxide semiconductor thin films over large areas at low temperatures was accomplished by optimizing both the film formation process and the low-temperature post-processing via plasma annealing. Increasing the substrate-to-target distance (DST) and the applied target voltage was found to produce more uniform deposition. The results of the field-effect mobility distributions of IGZO TFTs processed using plasma annealing were founded that plasma annealing generated essentially uniform distributions with μFE values in the range of 32–35 cm2 V−1 s−1.

DOI： 10.35848/1347-4065/acbd56

Web of Science

Scopus

Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/acbd56/pdf
Development of a non-thermal atmospheric pressure plasma-assisted technology for the direct joining of metals with dissimilar materials Reviewed

Takenaka, K; Machida, R; Bono, T; Jinda, A; Toko, S; Uchida, G; Setsuhara, Y

JOURNAL OF MANUFACTURING PROCESSES Vol. 75 page： 664 - 669 2022.3

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Publisher：Journal of Manufacturing Processes

This work demonstrated the joining of SUS304 stainless steel to polycarbonate (PC) using an atmospheric pressure radio frequency (RF) plasma jet in conjunction with thermal press fitting. The tensile shear stress values of samples bonded after plasma treatment of both the SUS304 and PC were found to be higher than those of specimens in which only one or neither surface was exposed to the plasma. These results confirm that an atmospheric pressure RF plasma jet can be applied to the joining of different materials.

DOI： 10.1016/j.jmapro.2022.01.041

Web of Science

Scopus
Nanostructured Ge and GeSn films by high‑pressure He plasma sputtering for high-capacity Li ion battery anodes Reviewed Open Access

Giichiro Uchida, Kenta Nagai, Yuma Habu, Junki Hayashi, Yumiko Ikebe, Mineo Hiramatsu, Ryota Narishige, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara

Scientific Reports Vol. 12 ( 1 ) page： 1742 2022.2

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：Nature Portfolio

Abstract

We fabricated nanostructured Ge and GeSn films using He radio-frequency magnetron plasma sputtering deposition. Monodisperse amorphous Ge and GeSn nanoparticles of 30–40 nm size were arranged without aggregation by off-axis sputtering deposition in the high He-gas-pressure range of 0.1 Torr. The Ge film porosity was over 30%. We tested the charge/discharge cycle performance of Li-ion batteries with nanostructured Ge and GeSn anodes. The Ge anode with a dispersed arrangement of nanoparticles showed a Li-storage capacity of 565 mAh/g after the 60th cycle. The capacity retention was markedly improved by the addition of 3 at% Sn in Ge anode. The GeSn anode (3 at% Sn) achieved a higher capacity of 1128 mAh/g after 60 cycles with 92% capacity retention. Precise control of the nano-morphology and electrical characteristics by a single step procedure using low temperature plasma is effective for stable cycling of high-capacity Ge anodes.

DOI： 10.1038/s41598-022-05579-z

Open Access

Web of Science

Scopus

PubMed
Development of a non-thermal atmospheric pressure plasma-assisted technology for the direct joining of metals with dissimilar materials Reviewed

Kosuke Takenaka, Rikuro Machida, Tetsuya Bono, Akiyta Jinda, Susumu Toko, Giichiro Uchida, Yuichi Setsuhara

Journal of Manufacturing Processes Vol. 75 page： 664 - 669 2022.2

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Language：English Publishing type：Research paper (scientific journal)
Morphological control of nanostructured Ge films in high Ar-gas-pressure plasma sputtering process for Li ion batteries Reviewed

J. Hayashi, K. Nagai, Y. Habu, Y. Ikebe, M. Hiramatsu, R. Narishige, N. Itagaki, M. Shiratani, Y. Setsuhara, G. Uchida

Japanese Journal of Applied Physics Vol. 61 ( SA ) page： SA1002-1 - SA1002-7 2022.1

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Authorship：Last author Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

We present a study on morphological control of nanostructured Ge films by the Ar gas pressure in plasma sputtering deposition. In the low Ar-gas-pressure range, aggregated islands of amorphous grains are formed on the film surface, while in the high-pressure range of 500 mTorr monodisperse nano-grains of about 30 nm in size are orderly arranged without aggregation. The film porosity shows a high value of over 10%. We tested the charge/discharge cycle performance of Li-ion batteries with nanostructured Ge films as anodes. The battery cell with an ordered arrangement structure maintained a high capacity of 434 mAh g−1 after 40 charge/discharge cycles, while that with an aggregated structure exhibited a rapid degradation of capacity to 5.08–183 mAh g−1. An ordered arrangement of Ge nano-grains with a high porosity, which is realized in a simple one-step procedure using high Ar-gas-pressure plasma sputtering, is effective for the stable cycling of high-capacity metal anodes.

DOI： 10.35848/1347-4065/ac2b7b

Web of Science

Scopus
Low-temperature and High-speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-pressure Plasma Sputtering Reviewed Open Access

Giichiro Uchida, Kenta Nagai, Ayaka Wakana, Yumiko Ikebe

IEEE Open Journal of Nanotechnology Vol. 3 page： 153 - 158 2022

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/OJNANO.2022.3221462

Open Access

Web of Science

Scopus
Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth Reviewed Open Access

Shota Nunomura, Kunihiro Kamataki, Takehiro Nagai, Tatsuya Misawa, Shinji Kawai, Kosuke Takenaka, Giichiro Uchida, Kazunori Koga

IEEE Open Journal of Nanotechnology Vol. 3 page： 94 - 100 2022

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/OJNANO.2022.3209995

Open Access

Web of Science

Scopus
Effects of surrounding gas on plasma-induced downward liquid flow Reviewed

Kawasaki, T; Nishida, K; Uchida, G; Mitsugi, F; Takenaka, K; Koga, K; Setsuhara, Y; Shiratani, M

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( SH ) 2020.5

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Publisher：Japanese Journal of Applied Physics

Understanding the mechanisms behind plasma-induced liquid flow is important for the transport of reactive species in liquid. In this study, we studied the effects of the surrounding gas compositions of a plasma-jet on the plasma-induced downward liquid flow using particle image velocimetry. Nitrogen (N<inf>2</inf>) and oxygen (O<inf>2</inf>) mixtures in different mixing ratios were supplied as surrounding gas around a helium (He) plasma jet at a constant flow rate. The results clearly indicated that O<inf>2</inf> in the surrounding gas plays a key role in enhancing the downward flow. Increasing the O<inf>2</inf> concentration increased the downward flow in the depth direction. An emission spectroscopy analysis suggested that reactive species related to excited atomic O were considered to be important for inducing downward flows. The relationship between the downward flows and oxidation reactions on a liquid target were discussed to determine the reasons responsible for the driving forces.

DOI： 10.35848/1347-4065/ab71dc

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Scopus
大気圧低温プラズマジェット照射溶液によるがん細胞殺傷に関する研究 Reviewed

内田儀一郎, 池田純一郎, 竹中弘祐, 節原裕一

スマートプロセス学会誌 Vol. 9 ( 3 ) page： 90 - 96 2020.5

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Authorship：Lead author
Effects of surrounding gas on plasma-induced downward liquid flow Reviewed

T. Kawasaki, K. Nishida, G. Uchida, F. Mitsugi, K. Takenaka, K. Koga, Y. Setsuhara, M. Shiratani

Japanese Journal of Applied Physics Vol. 59 page： SHHF02-1 - SHH02-6 2020.3

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Decomposition and oxidation of methionine and tryptophan following irradiation with a nonequilibrium plasma jet and applications for killing cancer cells (vol 9, 6625, 2019) Reviewed Open Access

Uchida, G; Mino, Y; Suzuki, T; Ikeda, J; Suzuki, T; Takenaka, K; Setsuhara, Y

SCIENTIFIC REPORTS Vol. 9 ( 1 ) 2019.11

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Publisher：Scientific Reports

In Figure 5 there is a missing axis label. The y-axis of the bottom graph should be labelled “Intensity (arb. units)” The correct Figure 5 appears below as Figure 1. Additionally, this Article contains errors in Reference 44 which is incorrectly given as: Ito, T., Uchida, G., Nakajima, A., Takenaka, K. & Setsuhara, Y. Selective production of reactive oxygen and nitrogen species in the plasma-treated water by using a nonthermal high-frequency plasma jet. Jpn. J. Appl. Phys. 56, 01AC06 (2016) The correct reference is listed below as ref. 1:.

DOI： 10.1038/s41598-019-54737-3

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High-rate deposition of silicon nitride thin films using plasma-assisted reactive sputter deposition Reviewed

Takenaka, K; Setsuhara, Y; Han, JG; Uchida, G; Ebe, A

THIN SOLID FILMS Vol. 685 page： 306 - 311 2019.9

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Publisher：Thin Solid Films

Functional thin films on organic materials are important in flexible electronics including next-generation flexible displays and photovoltaic cells. Herein, we describe the formation of SiN<inf>x</inf> films by plasma-assisted reactive sputtering deposition at low temperature, and detail the properties of the formed films. The effect of plasma assistance on the deposition rate and the properties of the SiN<inf>x</inf> films deposited by this system are reported as functions of relative N<inf>2</inf> partial pressure. Plasma assistance led to a deposition rate as high as 1.63 nm/s. The thin film formed at a relative nitrogen partial pressure of 21.4% exhibited a density of 2.73 g/cm3 and was more than 95% transparent over the entire visible region of the spectrum. The properties of SiN<inf>x</inf> films formed by plasma-assisted reactive sputtering deposition demonstrate the feasibility of forming SiN<inf>x</inf> films that are suitable for passivation applications in devices such as organic light-emitting diodes (OLEDs) and solar cells.

DOI： 10.1016/j.tsf.2019.06.049

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Low-temperature formation of high-mobility a-InGaZnOx films using plasma-enhanced reactive processes Reviewed

Takenaka, K; Endo, M; Hirayama, H; Uchida, G; Ebe, A; Setsuhara, Y

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 9 ) 2019.9

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Publisher：Japanese Journal of Applied Physics

This work demonstrated the low-temperature fabrication of high-mobility a-InGaZnOx (a-IGZO) films using plasma-enhanced reactive processing. The effect of the post-processing temperature on the performance of IGZO thin-film transistors (TFTs) using these a-IGZO films as a channel layer was also investigated. IGZO TFTs incorporating a-IGZO films plasma-treated at temperatures as low as 200 °C exhibited the expected TFT transfer characteristics, with field effect mobility values as high as 40 cm2 V-1 s-1. The fabrication of IGZO TFTs that exhibited homogeneous characteristics over large substrate areas was attempted, by assessing the effects of the plasma treatment on a-IGZO films deposited at various oxygen flow rate ratios. The electrical properties of IGZO TFTs using plasma-treated films were found to be dramatically improved, irrespective of the film deposition conditions prior to the plasma treatment. These results confirm the feasibility of producing IGZO TFTs with uniform characteristics over large substrates areas.

DOI： 10.7567/1347-4065/ab219c

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High-rate deposition of silicon nitride thin films using plasma-assisted reactive sputter deposition Reviewed

Kosuke Takenaka, Yuichi Setsuhara, Jeon Geon Han, Giichiro Uchida, Akinori Ebe

Thin Solid Films Vol. 685 page： 306 - 311 2019.9

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Low-temperature formation of high-mobility a-InGaZnOx films using plasma-enhanced reactive processes Reviewed

Kosuke Takenaka, Masashi Endo, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 58 page： 090605-1 - 090605-5 2019.6

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Decomposition and oxidation of methionine and tryptophan following irradiation with a nonequilibrium plasma jet and applications for killing cancer cells Reviewed

Giichiro Uchida, Yusuke Mino, Tensho Suzuki, Jun-ichiro Ikeda, Takashi Suzuki, Kosuke Takenaka, Yuichi Setsuhara

Scientific Reports Vol. 9 page： 6625 2019.4

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Decomposition and oxidation of methionine and tryptophan following irradiation with a nonequilibrium plasma jet and applications for killing cancer cells Reviewed Open Access

Uchida, G; Mino, Y; Suzuki, T; Ikeda, J; Suzuki, T; Takenaka, K; Setsuhara, Y

SCIENTIFIC REPORTS Vol. 9 ( 1 ) 2019.4

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We present evidence for the decomposition and oxidation of amino acids in aqueous solution following irradiation with a nonequilibrium plasma jet. Of 15 amino acids tested in cell culture medium, plasma irradiation induced a marked chemical change in methionine and tryptophan due to the effective production of reactive oxygen species by plasma-water interaction. We also report that plasma-treated methionine and tryptophan aqueous solutions can kill cancer cells, greatly decreasing the viability of human endometrial carcinoma (HEC-1) cancer cells due to the presence of decomposition or oxidation products generated from the amino acid. Plasma-treated methionine and tryptophan aqueous solutions also induced an anti-cancer effect on cancer-initiating cells.

DOI： 10.1038/s41598-019-42959-4

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大気圧非平衡He プラズマジェットと溶液との相互作用に関する可視化研究 Invited Reviewed

内田儀一郎, 竹中弘祐, 川崎敏之, 古閑一憲, 白谷正治, 節原裕一

スマートプロセス学会誌 Vol. 8 ( 2 ) page： 58 - 63 2019.3

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Effects of post-deposition plasma treatments on stability of amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering Reviewed

Takenaka, K; Endo, M; Uchida, G; Setsuhara, Y

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

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Publisher：Japanese Journal of Applied Physics

Effects of post-deposition plasma treatments on the stability of amorphous InGaZnO<inf>x</inf> thin-film transistors (TFTs) prepared with plasma-assisted reactive magnetron sputtering were investigated. The temporal evolution in the electrical characteristics of as-deposited IGZO TFT and post plasma treated IGZO TFT that passed over 400 d after fabrication and were kept under 40% humidity at room temperature were measured, resulting in which no change in the electrical characteristics of post plasma treated IGZO TFT with mobility of 40 cm2 V-1 s-1 were observed. Positive-current-bias instability in post plasma treated IGZO TFTs was examined together with as-deposited IGZO TFTs. The results indicated that the stabilities of electrical characteristics caused by the positive bias stress is primarily attributed to defects in the bulk a-IGZO region for as-deposited IGZO TFTs. The stabilities of electrical characteristics in post plasma treated IGZO TFTs were considerably improved compared to that of as-deposited IGZO TFTs. From these results, it was shown that the post plasma treatment is considered to be effective for improving the stability of IGZO TFTs as well as conventional thermal annealing.

DOI： 10.7567/1347-4065/aaec18

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Influence of deposition condition on electrical properties of a-IGZO films deposited by plasma-enhanced reactive sputtering Reviewed

Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Journal of Alloys and Compounds Vol. 772 page： 642 - 649 2019.1

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DOI： 10.1016/j.jallcom.2018.09.143

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Effects of post-deposition plasma treatments on stability of amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering Reviewed

Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 58 page： SAAC03-1 - SAAC03-5 2018.11

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Language：English Publishing type：Research paper (scientific journal)
Effect of a plasma-activated medium produced by direct irradiation on cancer cell killing Reviewed

Uchida, G; Ito, T; Ikeda, J; Suzuki, T; Takenaka, K; Setsuhara, Y

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 9 ) 2018.9

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Publisher：Japanese Journal of Applied Physics

We describe the effects of the plasma-activation of a medium on the killing of cancer cells, in which the plasma-activated medium is produced by the irradiation of the cell culture medium using a low-frequency (LF) or very-high-frequency (VHF) plasma jet. The plasma-activated medium produced by the direct contact of the LF plasma jet with the liquid surface induces much lower cancer cell viability, and large amounts of oxidation products, such as gluconic acid and methionine sulfoxide, can be detected in the plasma-activated medium. Our experiments show that the process of using plasma created by the direct contact of a LF plasma jet leads to a plasma-activated medium with stronger cancer-cell killing ability compared with a no-contact process. Also, the oxidation products, such as methionine sulfoxide in the plasma-activated medium become useful proxies for lethality.

DOI： 10.7567/JJAP.57.096201

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Plasma-enhanced reactive linear sputtering source for formation of silicon-based thin films Reviewed

Kosuke Takenaka, Yuichi Setsuhara, Jeon Geon Han, Giichiro Uchida, Akinori Ebe

Review of Scientific Instruments Vol. 89 ( 8 ) page： 083902-1 - 083902-6 2018.8

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DOI： 10.1063/1.5037408

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Effect of plasma-activated medium produced by direct irradiation on cancer cell killing Reviewed

Giichiro Uchida, Taiki Ito, Jun-ichiro Ikeda, Takashi Suzuki, Kosuke Takenaka, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 57 ( 9 ) page： 096201-1 - 096201-6 2018.7

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Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma Reviewed

Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Yuichi Setsuhara

Applied Physics Letters Vol. 112 ( 15 ) page： 152103-1 - 1523103-4 2018.4

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Language：English Publishing type：Research paper (scientific journal) Publisher：American Institute of Physics Inc.

DOI： 10.1063/1.5011268

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Low-temperature formation of c-axis orientated aluminum nitride thin films with plasma-assisted reactive pulsed-DC magnetron sputtering Reviewed

Kosuke Takenaka, Yoshikatsu Satake, Giichiro Uchida, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 57 ( 1 ) page： 01AD06-1 - 01AD06-5 2018.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.57.01AD06

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Selective production of reactive oxygen and nitrogen species in the plasma-treated water by using a nonthermal high-frequency plasma jet Reviewed

Uchida, G; Takenaka, K; Takeda, K; Ishikawa, K; Hori, M; Setsuhara, Y

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

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Publisher：Japanese Journal of Applied Physics

We present the control of H<inf>2</inf>O<inf>2</inf> and NO<inf>2</inf> - productions in deionized water by using a high-frequency plasma jet driven by a 60 MHz voltage. In the gas phase, the high-frequency plasma jet has a high O (3P) atom density of 8 × 1014 cm-3, which is two orders of magnitude higher than that of the low-frequency plasma jet driven by a 5 kHz voltage. Concerning the production of reactive oxygen and nitrogen species in the liquid phase, with the direct contact of the plasma jet to the liquid surface, the H<inf>2</inf>O<inf>2</inf> concentration is higher than the NO<inf>2</inf> - concentration. On the other hand, without the observable contact of the high-frequency plasm jet with high plasma density to the liquid surface, the NO<inf>2</inf> - concentration increases with the flow rate of N<inf>2</inf>(20%)O<inf>2</inf>(80%) gas added to the Ar discharge gas and becomes more dominant compared with H<inf>2</inf>O<inf>2</inf> in the plasma-treated water. H<inf>2</inf>O<inf>2</inf> and NO<inf>2</inf> - could be selectively produced in the plasma-treated water by using a nonthermal high-frequency plasma jet, which is a promising tool for biomedical applications.

DOI： 10.7567/JJAP.57.0102B4

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Selective production of reactive oxygen and nitrogen species in the plasma-treated water by using a nonthermal high-frequency plasma jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Keigo Takeda, Kenji Ishikawa, Masaru Hori, Yuichi Setsuhara

Japanese Journal of Applied Physics Vol. 57 page： 0102B4-1 - 0102B4-6 2017.11

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Development of a non-equilibrium 60 MHz plasma jet with a long discharge plume Reviewed

Giichiro Uchida, Kazufumi Kawabata, Taiki Ito, Kosuke Takenaka, Yuichi Setsuhara

JOURNAL OF APPLIED PHYSICS Vol. 122 ( 3 ) 2017.7

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DOI： 10.1063/1.4993715

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Foreword: Advanced plasma science and its applications for nitride and nanomaterials Reviewed

Itoh, T., Naritsuka, S., Fujiwara, Y., Hiramatsu, M., Kasu, M., Koga, K., Kondo, H., Matsumoto, K., Nakatsuka, O., Niitsu, K., TOMOHIRO NOZAKI, Ohta, T., Sakai, O., Sato, H., Takeuchi, T., Uchida, G.

Japanese Journal of Applied Physics Vol. 56 ( 1 ) 2017.1

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DOI： 10.7567/JJAP.56.01A001

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Control of reactive oxygen and nitrogen species production in liquid by nonthermal plasma jet with controlled surrounding gas Reviewed

Taiki Ito, Giichiro Uchida, Atsushi Nakajima, Kosuke Takenaka, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.56.01AC06

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Advanced Plasma Science and Its Applications for Nitride and Nanomaterials FOREWORD

Itoh, T; Naritsuka, S; Fujiwara, Y; Hiramatsu, M; Kasu, M; Koga, K; Kondo, H; Matsumoto, K; Nakatsuka, O; Niitsu, K; Nozaki, T; Ohta, T; Sakai, O; Sato, H; Takeuchi, T; Uchida, G

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

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Effects of Working Pressure on the Physical Properties of a-InGaZnOx Films Formed Using Inductively Coupled Plasma-Enhanced Reactive Sputtering Deposition Reviewed

Kosuke Takenaka, Keitaro Nakata, Giichiro Uchida, Yuichi Setsuhara, Akinori Ebe

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 44 ( 12 ) page： 3099 - 3106 2016.12

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/TPS.2016.2593458

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Effects of nonthermal plasma jet irradiation on the selective production of H2O2 and NO2- in liquid water Reviewed

Giichiro Uchida, Atsushi Nakajima, Taiki Ito, Kosuke Takenaka, Toshiyuki Kawasaki, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

JOURNAL OF APPLIED PHYSICS Vol. 120 ( 20 ) page： 203302-1 - 203302-9 2016.11

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.4968568

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J-GLOBAL
Two-dimensional concentration distribution of reactive oxygen species transported through a tissue phantom by atmospheric-pressure plasma-jet irradiation Reviewed

Toshiyuki Kawasaki, Akihiro Sato, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

APPLIED PHYSICS EXPRESS Vol. 9 ( 7 ) 2016.7

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DOI： 10.7567/APEX.9.076202

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Effects of irradiation distance on supply of reactive oxygen species to the bottom of a Petri dish filled with liquid by an atmospheric O-2/He plasma jet Reviewed

Toshiyuki Kawasaki, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Akihiro Sato, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

JOURNAL OF APPLIED PHYSICS Vol. 119 ( 17 ) 2016.5

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DOI： 10.1063/1.4948430

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Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Hyunwoong Seo, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

SCIENCE OF ADVANCED MATERIALS Vol. 8 ( 3 ) page： 636 - 639 2016.3

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DOI： 10.1166/sam.2016.2520

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Influence of voltage pulse width on the discharge characteristics in an atmospheric dielectric-barrier-discharge plasma jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 1 ) 2016.1

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DOI： 10.7567/JJAP.55.01AH03

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Process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnOx channel thin-film transistors Reviewed

Kosuke Takenaka, Keitaro Nakata, Hirofumi Otani, Soichiro Osaki, Giichiro Uchida, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 1 ) 2016.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.55.01AA18

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20pAD-5 Cross-scale coupling in atmospheric pressure functional plasmas Open Access

Koga K., Uchida G., Kawasaki T., Shiratani M.

Meeting Abstracts of the Physical Society of Japan Vol. 71 page： 868 - 868 2016

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Language：Japanese Publisher：The Physical Society of Japan (JPS)

DOI： 10.11316/jpsgaiyo.71.1.0_868

Open Access

CiNii Research
SPATIO-TEMPORAL BEHAVIORS OF ATMOSPHERIC-PRESSURE PLASMA JETS FOR INVESTIGATION OF REACTIVE-SPECIES PRODUCTION IN LIQUID

Y. Setsuhara, A. Nakajima, G. Uchida, T. Ito, K. Takenaka, J. Ikeda

2016 43RD IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS) 2016

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Gas Flow Rate Dependence of the Discharge Characteristics of a Plasma Jet Impinging Onto the Liquid Surface Reviewed

Giichiro Uchida, Atsushi Nakajima, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 43 ( 12 ) page： 4081 - 4087 2015.12

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/TPS.2015.2488619

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Analysis of Dynamic Discharge Characteristics of Plasma Jet Based on Voltage and Current Measurements Using a Metal Plate Reviewed

Yuichi Setsuhara, Giichiro Uchida, Kazufumi Kawabata, Atsushi Nakajima, Kosuke Takenaka

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 43 ( 11 ) page： 3821 - 3826 2015.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/TPS.2015.2482998

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Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering Reviewed

S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 68th GEC/9th ICRP/33rd SPP609 page： LW1.133 2015.9

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Multiple exciton generation (MEG) in QDs is expected to enhance significantly the energy conversion efficiency of solar cells. Although there are several reports on MEG characteristics from various QD materials such as PbS, CdSe, CdS ZnS, and Ag2S, such materials have disadvantages of their toxicity and limited resources. Here we have developed quantum-dots (QDs) solar cells using Ge nanoparticles fabricated by rf sputtering method under high pressure. We fabricated Ge nanoparticles by rf sputtering at a pressure of 1.5 Torr. Since the mean free path of Ge atoms is an order of micrometer, and Ge nanoparticles are formed in gas phase. We fabricated Ge nanoparticles using Ar and N2 to terminate surface defects by N. Ge and Ar emission intensities decrease significantly with increasing N2 partial pressure. The electron density was measured with a plasma absorption probe. The electron density decreases with increasing N2 partial pressure.
Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition Reviewed

S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 68th GEC/9th ICRP/33rd SPP609 page： GT1.149 2015.9

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We are developing Au-induced crystalline Ge film formation using sputtering deposition. For the method, very thin Au films were deposited on SiO2 substrates and then Ge atoms were irradiated to the Au films by sputtering. We found two kinds of Ge film growth: one is Ge film formation on Au films, and the other is Ge film formed between Au films and SiO2. The latter film formation, however, takes place in a narrow temperature range around 140°C. Here we report two kinds of substrate temperature dependence of Ge film formation: one is annealing temperature of Au films, and the other is the substrate temperature dependence during Ge sputtering. 30nm-thick Au films were deposited quartz glass as a catalyst at room temperature by sputtering. Then the Au films were annealed in a temperature range from room temperature to 190 °C in a vacuum. Au grain grows and crystal orientation shows better alignment as the annealing temperature rises. We found that the smaller grain size with random orientation is better for Ge film formed between Au films and SiO2.
Effects of gas flow on oxidation reaction in liquid induced by He/O-2 plasma-jet irradiation Reviewed

Atsushi Nakajima, Giichiro Uchida, Toshiyuki Kawasaki, Kazunori Koga, Thapanut Sarinont, Takaaki Amano, Kosuke Takenaka, Masaharu Shiratani, Yuichi Setsuhara

JOURNAL OF APPLIED PHYSICS Vol. 118 ( 4 ) 2015.7

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DOI： 10.1063/1.4927217

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Low-temperature formation of amorphous InGaZnOx films with inductively coupled plasma-enhanced reactive sputter deposition Reviewed

Kosuke Takenaka, Ken Cho, Yasufumi Ohchi, Hirofumi Otani, Giichiro Uchida, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 54 ( 6 ) 2015.6

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DOI： 10.7567/JJAP.54.06GC02

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Effects of discharge voltage waveform on the discharge characteristics in a helium atmospheric plasma jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Yuichi Setsuhara

JOURNAL OF APPLIED PHYSICS Vol. 117 ( 15 ) 2015.4

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.4918546

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Atmospheric-Pressure Gas-Breakdown Characteristics with a Radio-Frequency Voltage Reviewed

Giichiro Uchida, Kosuke Takenaka, Atsushi Miyazaki, Yuichi Setsuhara

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Vol. 15 ( 3 ) page： 2192 - 2196 2015.3

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1166/jnn.2015.10233

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Atmospheric-Pressure Plasma Interaction with Soft Materials as Fundamental Processes in Plasma Medicine Reviewed

Kosuke Takenaka, Atsushi Miyazaki, Giichiro Uchida, Yuichi Setsuhara

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Vol. 15 ( 3 ) page： 2115 - 2119 2015.3

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1166/jnn.2015.10229

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Dynamic Properties of Helium Atmospheric Dielectric-Barrier-Discharge Plasma Jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Atsushi Miyazaki, Kazufumi Kawabata, Yuichi Setsuhara

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Vol. 15 ( 3 ) page： 2324 - 2329 2015.3

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DOI： 10.1166/jnn.2015.10232

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Influence of He Gas Flow Rate on Optical Emission Characteristics in Atmospheric Dielectric-Barrier-Discharge Plasma Jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Kazufumi Kawabata, Yuichi Setsuhara

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 43 ( 3 ) page： 737 - 744 2015.3

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/TPS.2014.2387064

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Plasma Interaction with Organic Molecules in Liquid as Fundamental Processes in Plasma Medicine Reviewed

Kosuke Takenaka, Atsushi Miyazaki, Hiroya Abe, Giichiro Uchida, Yuichi Setsuhara

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Vol. 15 ( 3 ) page： 2120 - 2124 2015.3

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1166/jnn.2015.10230

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Molecular-structure variation of biomolecules irradiated with atmospheric-pressure plasma through plasma/liquid interface Reviewed

Kosuke Takenaka, Atushi Miyazaki, Kazufumi Kawabata, Giichiro Uchida, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 54 ( 1 ) 2015.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.54.01AF04

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Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells Reviewed

Hyunwoong Seo, Daiki Ichida, Shinji Hashimoto, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 54 ( 1 ) 2015.1

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DOI： 10.7567/JJAP.54.01AD02

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Effects of driving voltage frequency on the discharge characteristics of atmospheric dielectric-barrier-discharge plasma jet Reviewed

Giichiro Uchida, Kosuke Takenaka, Kazufumi Kawabata, Atsushi Miyazaki, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 11 ) 2014.11

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DOI： 10.7567/JJAP.53.11RA08

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Dust Hour Glass in a Capacitive RF Discharge Reviewed

Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 42 ( 10 ) page： 2672 - 2673 2014.10

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DOI： 10.1109/TPS.2014.2343975

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Visualization of the Distribution of Oxidizing Substances in an Atmospheric Pressure Plasma Jet Reviewed

Toshiyuki Kawasaki, Kota Kawano, Hiroshi Mizoguchi, Yuto Yano, Keisuke Yamashita, Miho Sakai, Takako Shimizu, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 42 ( 10 ) page： 2482 - 2483 2014.10

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/TPS.2014.2325038

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Performance dependence of Si quantum dot-sensitized solar cells on counter electrode Reviewed

Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 5 ) 2014.5

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.53.05FZ01

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Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell Reviewed

Hyunwoong Seo, Min-Kyu Son, Songyi Park, Myeongsoo Jeong, Hee-Je Kim, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

THIN SOLID FILMS Vol. 554 page： 122 - 126 2014.3

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2013.08.103

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Analysis on the Photovoltaic Property of Si Quantum Dot-Sensitized Solar Cells Reviewed

Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING Vol. 15 ( 2 ) page： 339 - 343 2014.2

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1007/s12541-014-0343-8

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A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas Reviewed

M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida

Proc. 8th Int. Conf. Reactive Plasmas page： 4B-PM-O1 2014.1
Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation Reviewed

K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 3B-WS-14 2014.1
Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas Reviewed

M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga

JPS Conf. Proc Vol. 1 page： 15083 2014.1

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We report experimental results on correlation between plasma parameters and growth of nanoparticles in capacitively-coupled VHF discharges with amplitude modulation (AM) obtained using two dimensional laser light scattering (LLS) method. Power spectra of floating potential, Ar 810.27?nm emission intensity, and LLS intensity have peaks at the modulation frequency of 100?Hz and its second harmonics, indicating linear correlation between plasma parameters and growth of nanoparticles, that is, their size and/or density. The power spectrum of LLS intensity has another peak at 60?Hz, which coincides with our theoretical prediction of plasma fluctuation induceed nonlinear response of nanoparticle growth.

DOI： 10.7566/JPSCP.1.015083
Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control Reviewed

G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

JPS Conf. Proc Vol. 1 page： 15080 2014.1

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Crystalline Si nanoparticles were successfully fabricated by a multi-hollow discharge plasma CVD method. Optical band gap of Si-nanoparticle composite films was controlled in a range of 1.6?1.9?eV by the volume fraction of Si nanoparticles in the films. SiN nanoparticle composite films were also successfully produced using a double multi-hollow discharge plasma CVD method in SiH4/H2 and N2 gas mixture. High optical band gap of 2.1?2.2?eV was achieved by adding N atoms to the Si naoparticles.

DOI： 10.7566/JPSCP.1.015080
Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method Reviewed

Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 6P-AM-S08-P35 2014.1
Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation Reviewed

Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-AM-S02-P1 2014.1
Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering Reviewed

S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 6P-AM-S08-P32 2014.1
Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method Reviewed

D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 6P-AM-S08-P33 2014.1
Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries Reviewed

G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 4C-PM-O1 2014.1
Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering Reviewed

K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-PM-S08-P02 2014.1
Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method Reviewed

G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

JPS Conf. Proc Vol. 1 page： 15082 2014.1

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We have deposited crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. Raman spectra and X-ray diffraction pattern of Ge nanoparticle films show a transition from amorphous to crystalline by adding H2 gas.

DOI： 10.7566/JPSCP.1.015082
Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD Reviewed

S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

JPS Conf. Proc Vol. 1 page： 15069 2014.1

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Si clusters formed in silane discharge plasmas are mainly responsible for light induced degradation of hydrogenated amorphous Si (a-Si:H) thin films deposited by the plasmas. Here we have investigated effects of grid DC bias on incorporation amount of Si clusters into a-Si:H films in multi-hollow discharge plasma CVD reactor using quartz crystal microbalances, by which volume fraction of Si clusters in deposited films is quantitatively measured. When the grid potential is lower than plasma potential, the negatively charged clusters are repelled away from the grid by electrostatic force, resulting in lower volume fraction.

DOI： 10.7566/JPSCP.1.015069
Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization Reviewed

K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-PM-S08-P07 2014.1
Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier Reviewed

H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Trans. Mater. Res. Soc. Jpn. Vol. 39 ( 3 ) page： 321 - 324 2014.1

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Language：Japanese Publisher：The Materials Research Society of Japan

Dye and quantum dot (QD) are representative sensitizers of the photochemical solar cells. Dye has the highest efficiency in the whole sensitizers. QDs have relatively low performance but their multiple exciton generation enhanced theoretical efficiency from 33 to 44% and expected to achieve high efficiency. This work tried to enhance the photovoltaic performance with the co-sensitization of N719 dye and Si QD. The performance of dye and QD co-sensitized solar cell was not much enhanced because of electron loss of charge recombination. Therefore, TiO2 barrier layer was introduced on TiO2 and Si QD. It blocked the charge recombination with redox electrolyte. It also helped better electron injection from excited dye to TiO2 with strengthened dye adsorption. Consequently, the performance of co-sensitized solar cell was enhanced with reduced charge recombination and increased dye adsorption.

DOI： 10.14723/tmrsj.39.321

CiNii Research
Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method Reviewed

T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-AM-SPD-P01 2014.1
Raman spectroscopy of a fine particle optically trapped in plasma”, Proc. 8th Int. Conf. Reactive Plasmas Reviewed

D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-AM-S05-P23 2014.1
Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats Reviewed

A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida

Proc. 8th Int. Conf. Reactive Plasmas page： 5P-AM-S2-P35 2014.1
Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization Reviewed

I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

JPS Conf. Proc Vol. 1 page： 15064 2014.1

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Effects of nitrogen addition to the sputtering atmosphere on crystal growth of ZnO films have been studied. The AFM characterization shows that the nitrogen suppresses the nucleation in the early stage of the crystal growth leading to a non-continue film structure with sparsely distributed grains. As the deposition time increases, the physical properties of the ZnO films are modified by enhancement of adatoms migration at the growing surface, thus homogenous and dense films with larger grain size are obtained. Utilizing these ZnO films as buffer layers with film thickness greater than 4?nm, the electrical resistivity of ZnO:Al films have been significantly decreased from 7.8 × 10?3?Ω?cm to 6.7 × 10?4?Ω?cm.

DOI： 10.7566/JPSCP.1.015064
Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target Reviewed

M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

JPS Conf. Proc Vol. 1 page： 15020 2014.1

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We have measured spatial profile of flux of dust particles generated due to interaction between H2 plasmas and graphite target in a divertor simulator to study transport mechanism of dust particles. Dust particles were collected on c-Si substrates and observed with a scanning electron microscope. We have found nanostructure of 10?nm in size on the substrate surface. Dust fluxes of both spherical dust particles and flakes are maximum at a position between 80 and 140?mm from the center of the plasma column. The spatial profile of dust flux is determined by the balance between deposition of nanoparticles and their etching by H atoms.

DOI： 10.7566/JPSCP.1.015020
Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas Reviewed

Masaharu Shiratani, Kazunori Koga, Kunihiro Kamataki, Shinya Iwashita, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 1 ) 2014.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.53.010201

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Organic-Inorganic Hybrid Solar Cells Based on Si Quantum Dots

Record of Joint Conference of Electrical and Electronics Engineers in Kyushu Vol. 2014 page： 23 - 23 2014

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Publisher：Committee of Joint Conference of Electrical, Electronics and Information Engineers in Kyushu

DOI： 10.11527/jceeek.2014.0_23

CiNii Research
The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si Reviewed

Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki, Masaharu Shiratani

THIN SOLID FILMS Vol. 546 page： 284 - 288 2013.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2013.04.073

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Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells Reviewed

Giichiro Uchida, Yuting Wang, Daiki Ichida, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 11 ) 2013.11

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.11NA05

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Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si* and SiH* Reviewed

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 11 ) 2013.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.11NA07

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Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide Reviewed

Iping Suhariadi, Kouichiro Oshikawa, Kazunari Kuwahara, Kouichi Matsushima, Daisuke Yamashita, Giichiro Uchida, Kazunari Koga, Masaharu Shiratani, Naho Itagaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 11 ) 2013.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.11NB03

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Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 to 3.3 eV on ZnO Templates Reviewed

Koichi Matsushima, Tadafumi Hirose, Kazunari Kuwahara, Daisuke Yamashita, Giichiro Uchida, Hyunwoong Seo, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 11 ) 2013.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.11NM06

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Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates Reviewed

Kazunori Koga, Mizuki Tateishi, Katsushi Nishiyama, Giichiro Uchida, Kunihiro Kamataki, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 11 ) 2013.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.11NA08

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Improvement on the electron transfer of dye-sensitized solar cell using vanadium doped TiO2 Reviewed

Hyunwoong Seo, Yuting Wang, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Sang-Hun Nam, Jin-Hyo Boo

Japanese Journal of Applied Physics Vol. 52 ( 11 ) 2013.11

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.7567/JJAP.52.11NM02

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Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells Reviewed

Giichiro Uchida, Muneharu Sato, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

THIN SOLID FILMS Vol. 544 page： 93 - 98 2013.10

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2013.04.111

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Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells Reviewed

Hyunwoong Seo, Min-Kyu Son, Hee-Je Kim, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 10 ) 2013.10

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.10MB07

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Control of Deposition Profile and Properties of Plasma CVD Carbon Films

K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani

Proc. 13th International Conference on Plasma Surface Engineering Vol. 26 page： 136 - 139 2013.9

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We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on sidewall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.
Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate

N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

Proc. 13th International Conference on Plasma Surface Engineering Vol. 26 page： 84 - 87 2013.9

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High quality ZnO:Al (AZO) films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and AZO films. Introduction of small amount of N2 (N2/(Ar+N2) = 16%) to the sputtering atmosphere of NMC-ZnO buffer layers drastically improves the crystallinity of buffer layers and thus AZO films. The most remarkable effect of the buffer layers is a significant reduction in the resistivity at high base pressure of background gases. The resistivity of conventional AZO films increases from 2.0 m??cm to 70.0 m??cm with increasing the base pressure from 3×10-5 Pa to 1×10-3 Pa, while the resistivity of AZO films with NMC buffer layers increases from 0.5 m??cm to 2.0 m??cm, where the thickness of AZO film is 88 nm. Furthermore, AZO films with a sheet resistance of 10 ?/? and an optical transmittance higher than 80% in a wide wavelength range of 400?1100 nm have been obtained.
Preparation of Si Nanoparticles by Laser Plasma and Photovoltaic Properties of the QuantumDot Sensitized Solar Cell Reviewed

Pattarin Chewchinda, Kazuhei Hayashi, Daiki Ichida, Hyunwoong Seo, Giichiro Uchida, Masaharu Shiratani, Osamu Odawara, Hiroyuki Wada

page： p. 44 2013.9
Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD Reviewed

Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Hyunwoong Seo, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

SURFACE & COATINGS TECHNOLOGY Vol. 228 ( SUPPL.1 ) page： S550 - S553 2013.8

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.surfcoat.2012.04.029

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Mass density control of carbon films deposited by H-assisted plasma CVD method Reviewed

Tatsuya Urakawa, Hidehumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

SURFACE & COATINGS TECHNOLOGY Vol. 228 ( SUPPL.1 ) page： S15 - S18 2013.8

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.surfcoat.2012.10.002

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Observation of nanoparticle growth process using a high speed camera Reviewed

Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani

Proceedings of 21st International Symposium on Plasma Chemistry page： 264 2013.8

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Time evolution of spatial profile of nanoparticle amount in low pressure reactive discharge plasmas have been measured to study effects of amplitude modulation of the plasmas on particle growth in the initial growth phase. Amplitude modulation of discharge voltage leads to oscillate nanoparticle amount and their spatial profile. Growth of nanoparticles is suppressed by increasing the AM frequency.
Discharge power dependence of carbon dust flux in a divertor simulator Reviewed

Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara, Sven Bornholdt, Holger Kersten

JOURNAL OF NUCLEAR MATERIALS Vol. 438 ( SUPPL ) page： S788 - S791 2013.7

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.jnucmat.2013.01.169

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Effects of DC substrate bias voltage on dust flux in the Large Helical Device

Kazunori Koga, Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

JOURNAL OF NUCLEAR MATERIALS Vol. 438 ( SUPPL ) page： S727 - S730 2013.7

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Language：English

DOI： 10.1016/j.jnucmat.2013.01.154

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Transport control of dust particles via the electrical asymmetry effect: experiment, simulation and modelling Open Access

Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 46 ( 24 ) 2013.6

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Language：English

DOI： 10.1088/0022-3727/46/24/245202

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Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells Reviewed

Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

ELECTROCHIMICA ACTA Vol. 95 page： 43 - 47 2013.4

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.electacta.2013.02.026

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The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell Reviewed

Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

ELECTROCHIMICA ACTA Vol. 87 page： 213 - 217 2013.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.electacta.2012.09.087

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ナノ材料のプラズマプロセシングの研究の現状と将来 Invited Reviewed Open Access

M. Shiratani, K. Koga, G. Uchida, H. SEO, N. Itagaki, S. Iwashita

表面科学 Vol. 34 ( 10 ) page： 520 - 527 2013.1

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Language：Japanese Publisher：The Surface Science Society of Japan

This paper reviews production of nanoparticles using low pressure reactive plasmas and its application to quantum dot sensitized solar cells. For the method, nanoparticles of several nm in size with a small size dispersion are produced in gas phase using reactive plasmas, and then the nanoparticles and radicals are co-deposited on a substrate. This method realizes one-step deposition of nanoparticle composite films in a controllable way.

DOI： 10.1380/jsssj.34.520

Open Access

CiNii Research
Dust particle formation due to interaction between graphite and helicon deuterium plasmas Reviewed

Shinya Iwashita, Katsushi Nishiyama, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

FUSION ENGINEERING AND DESIGN Vol. 88 ( 1 ) page： 28 - 32 2013.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.fusengdes.2012.10.002

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Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization Reviewed

Iping Suhariadi, Koichi Matsushima, Kazunori Kuwahara, Koichi Oshikawa, Daisuke Yamashita, Hyunwoong Seo, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Sven Bornholdt, Holger Kersten, Harm Wulff, Naho Itagaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) 2013.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.01AC08

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H-2/N-2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition Reviewed

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) 2013.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.01AB01

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Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells

Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) 2013.1

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Language：English

DOI： 10.7567/JJAP.52.01AD05

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High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition Reviewed

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) 2013.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.52.01AD01

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H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition

Urakawa, T; Torigoe, R; Matsuzaki, H; Yamashita, D; Uchida, G; Koga, K; Shiratani, M; Setsuhara, Y; Takeda, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) 2013.1

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DOI： 10.7567/JJAP.52.01AB01

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H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Urakawa T., Torigoe R., Matsuzaki H., Yamashita D., Uchida G., Koga K., Shiratani M., Setsuhara Y., Takeda K., Sekine M., Hori M.

Japanese Journal of Applied Physics Vol. 52 ( 1 PART2 ) 2013.1

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Publisher：Japanese Journal of Applied Physics

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H<inf>2</inf>/N<inf>2</inf> plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance. © 2013 The Japan Society of Applied Physics.

DOI： 10.7567/JJAP.52.01AB01

Scopus
Effects of amplitude modulation on volume fraction of nanoparticles in films in an initial deposition phase

Record of Joint Conference of Electrical and Electronics Engineers in Kyushu Vol. 2013 page： 453 - 453 2013

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Publisher：Committee of Joint Conference of Electrical, Electronics and Information Engineers in Kyushu

DOI： 10.11527/jceeek.2013.0_453

CiNii Research
Laser trapping and Raman spectroscopy of fine particle in plasmas

Record of Joint Conference of Electrical and Electronics Engineers in Kyushu Vol. 2013 page： 452 - 452 2013

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Publisher：Committee of Joint Conference of Electrical, Electronics and Information Engineers in Kyushu

DOI： 10.11527/jceeek.2013.0_452

CiNii Research
Control of radial density profile of nano-particles produced in reactive plasma by amplitude modulation of radio frequency discharge voltage Reviewed

Kunihiro Kamataki, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

THIN SOLID FILMS Vol. 523 page： 76 - 79 2012.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2012.07.059

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Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma chemical vapor deposition Reviewed

Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

THIN SOLID FILMS Vol. 523 page： 29 - 33 2012.11

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2012.06.023

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Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors Reviewed

N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

Proc. International Symposium on Dry Process Vol. 34 page： 97 - 98 2012.11
Sheath-to-sheath transport of dust particles in a capacitively coupled discharge Reviewed

Shinya Iwashita, Giichiro Uchida, Julian Schulze, Edmund Schuengel, Peter Hartmann, Masaharu Shiratani, Zoltan Donko, Uwe Czarnetzki

PLASMA SOURCES SCIENCE & TECHNOLOGY Vol. 21 ( 3 ) 2012.6

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1088/0963-0252/21/3/032001

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High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers Reviewed

Kazunari Kuwahara, Naho Itagaki, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

THIN SOLID FILMS Vol. 520 ( 14 ) page： 4674 - 4677 2012.5

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2011.10.136

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In situ analysis of size distribution of nano-particles in reactive plasmas using two dimensional laser light scattering method

K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki

JOURNAL OF INSTRUMENTATION Vol. 7 ( 4 ) 2012.4

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Language：English

DOI： 10.1088/1748-0221/7/04/C04017

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Discharge Characteristics of Plasma Display Panels with SrCaO Protective Layer Manufactured Using "All-in-Vacuum" Process Reviewed Open Access

Takanobu Yano, Kazuya Uchida, Giichiro Uchida, Tsutae Shinoda, Hiroshi Kajiyama

MATERIALS TRANSACTIONS Vol. 53 ( 2 ) page： 440 - 445 2012.2

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.2320/matertrans.M2011181

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ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio Reviewed

I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani

Trans. Mater. Res. Soc. Jpn. Vol. 37 ( 2 ) page： 165 - 168 2012.1

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Language：English Publisher：The Materials Research Society of Japan

Effects of N2/Ar gas flow rate ratio on the crystallinity of sputtered ZnO films fabricated via nitrogen mediated crystallization (NMC) have been clarified. Introduction of small amount of N2 (N2/Ar = 4/20.5 sccm) drastically improves the crystal orientation and enlarges grain size of the NMC-ZnO films, where FWHM of XRD patterns for 2θ-ω and ω scan of (002) plane are 0.17° and 2.6°, respectively. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity, since excess N atoms in the films disarrange the crystal structure of ZnO. Furthermore, ZnO:Al (AZO) films with high crystallinity have been successfully fabricated by utilizing the NMC-ZnO films deposited at N2/Ar = 4/20.5 sccm as buffer layers. 100-nm-thick AZO films with a resistivity of 6.8×10-4 Ωcm and an optical transmittance higher than 80% in a wide wavelength range of 500 nm to 1500 nm has been obtained.

DOI： 10.14723/tmrsj.37.165

CiNii Research
Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition Reviewed

Kazunori Koga, Takeaki Matsunaga, Yeonwon Kim, Kenta Nakahara, Daisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 1 ) 2012.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1143/JJAP.51.01AD02

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Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Kazunori Koga, Kenta Nakahara, Yeon-Won Kim, Takeaki Matsunaga, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 1 ) 2012.1

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Language：English

DOI： 10.1143/JJAP.51.01AD03

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Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells Reviewed

Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 1 ) 2012.1

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1143/JJAP.51.01AD01

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Panel processing effects on discharge characteristics of plasma display panels Reviewed Open Access

Takanobu Yano, Kazuya Uchida, Giichiro Uchida, Tsutae Shinoda, Hiroshi Kajiyama

Journal of the Vacuum Society of Japan Vol. 55 ( 3 ) page： 125 - 128 2012

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.3131/jvsj2.55.125

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Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasmas Reviewed Open Access

Kunihiro Kamataki, Hiroshi Miyata, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

APPLIED PHYSICS EXPRESS Vol. 4 ( 10 ) 2011.10

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1143/APEX.4.105001

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Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film Reviewed

Kazunori Koga, Takeaki Matsunaga, William Makoto Nakamura, Kenta Nakahara, Yuuki Kawashima, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

THIN SOLID FILMS Vol. 519 ( 20 ) page： 6896 - 6898 2011.8

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2011.01.408

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Nano-factories in plasma: present status and outlook Reviewed

Masaharu Shiratani, Kazunori Koga, Shinya Iwashita, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 44 ( 17 ) 2011.5

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1088/0022-3727/44/17/174038

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Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage

K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten

Proc. Plasma Conf. 2011 page： 24P094-O 2011.1

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We collected dust particles generated by interaction between a plasma and a carbon target in helicon discharge reactor, by which diverter plasmas in fusion devices are simulated. The dust particles are classified into three kinds: small spherical particles, agglomerates, and large flakes, suggesting three formation mechanisms: chemical vapor deposition (CVD) growth, agglomeration, and peeling from redeposited layer on the reactor wall. The area density and flux towards substrates of dust particles exponentially increase with the substrate bias voltage. The energy influx of plasmas towards the target and ion density were measured to clarify the dust formation mechanisms. They are nearly constant irrespective of the substrate bias voltage suggesting that the production rate of dust particles does not depend on the substrate bias voltage and their collection efficiency does.
Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD

K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Proc. PVSEC-21 page： 3D-2P-20 2011.1
Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd

Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

Proc. PVSEC-21 page： 3D-2P-09 2011.1
Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD Reviewed

Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

Proc. of The 20th International Symposium on Plasma Chemistry （ISPC20） page： POL08 2011.1

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A combinatorial technique using a multi-hollow discharge plasma CVD method has been employed to investigate effects of substrate temperature on hydrogenated microcrystalline silicon (?c-Si:H) film growth. No film is deposited near the discharge region RT to 350°C, whereas the area of no film region decreases with increasing the substrate temperature. This is attributed to competitive reactions between Si etching by H atoms and Si deposition. The area of microcrystalline Si region increases with the substrate temperature due to high surface diffusion rate of Si containing radical. These results show that the process window of μc-Si:H films becomes wider for the higher substrate temperature due to two reasons: 1) the lower Si etching rate and 2) the longer surface migration length of Si containing radicals. The defect density decreases significantly with increasing Ts from 6.24 × 10 16 cm -3 for Ts =100 o C down to 6.26 × 10 15 cm -3 for T s =300 o C.
Deposition of cluster-free a-Si:H films using cluster eliminating filter

K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Proc. Plasma Conf. 2011 page： 24P010-O 2011.1

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We have succeeded in deposition of highly stable a-Si:H films at a rate of 3 nm/s. To evaluate their performance as an I layer of PIN solar cells, Fill Factor (FF) of N-type c-Si/a-Si:H/Ni Schottky cells with cluster free a-Si:H films were measured. High quality stable a-Si:H films, were deposited with a multi-hollow discharge plasma CVD reactor together with a cluster-eliminating filter. Initial FF of the cell is 0.521, whereas stabilized FF is 0.495 that is 4.99% lower than the initial FF. Our multi-hollow discharge plasma CVD method is useful to fabricate highly stable a-Si:H solar cells.
Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD

M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

Proc. Plasma Conf. 2011 page： 24G06 2011.1

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We have investigated effects of nanoparticle inclusion on properties of a-Si:H films and mc-Si:H films using the multi-hollow discharge plasma CVD method. Minor deposition species (nanoparticles in this study) modify considerably properties of a-Si:H films and mc-Si:H films
Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films

T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

Proc. PVSEC-21 page： 4D-2P-16 2011.1
Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films

K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

Proc. Plasma Conf. 2011 page： 24P008-O 2011.1

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Effects of N2/Ar flow rate ratio on properties of ZnO films fabricated via nitrogen mediated crystallization (NMC) have been studied. NMC-ZnO films are deposited by RF magnetron sputtering using Ar-N2 mixed gas. X-ray diffraction (XRD) analysis shows that the crystallinity of NMC-ZnO films is improved by addition of a small amount of N2 to sputtering atmosphere (N2/(Ar+N2) flow ratio of 8%). By using the NMC-ZnO films as homo-buffer layers, ZnO films with high crystallinity are deposited by RF magnetron sputtering. The full width at half-maximum of XRD patterns for ω scan of (002) plane are 0.061°, being significantly small compared with 0.49° for the films without buffer layers. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity because excess N atoms in the films disarrange the crystal structure of ZnO. The results indicate that utilizing NMC buffer layers deposited at an adequate N2 partial pressure is very promising to obtain epitaxial ZnO films with high crystallinity.
Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD

Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Proc. Plasma Conf. 2011 page： 23P013-O 2011.1

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Effects of electrolyte on performance of Si QDSCs were investigated. We successfully fabricated an efficient polysulfide electrolyte based on the solvent mixed with water and methanol at a volume ratio of 3:7. The optimal electrolyte contains 1.0M Na2S, 0.5M S and 0.2M KCl. By introducing different ingredients with proper concentration, Jsc, Voc and fill factor are much improved. The efficiency of Si QDSCs using optimized electrolyte is 0.027%
Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma

K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

Proc. of International Conference on Phenomena in Ionized Gases（ICPIG） 2011 Conference page： D13-318 2011.1
Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering

N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga

Proc. Plasma Conf. 2011 page： 24G6 2011.1

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Low resistive ZnO:Al (AZO) films with uniform spatial distribution have been obtained by utilizing buffer layers fabricated by Ar/N2 magnetron sputtering. For 100 nm-thick AZO films, the averaged grain size of AZO films with buffer layers is 65 nm, which is 1.8 times larger than that of the films without buffer layers. This increase in the grain size of AZO films is due to the low grain density of buffer layers. As a result, the resistivity is drastically reduced. At the area facing the target erosion, the resistivity reduced from 2.27 m??cm for the films without buffer layers to 0.50 m??cm for our films, consequently, the spatial distribution of the resistivity is significantly improved. These results reveal that our method described here is full of promise for fabrication of ZnO-based TCO materials.
Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition

T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

Proc. Plasma Conf. 2011 page： 24P015-O 2011.1

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Effects of nano-particles on formation kinetics of microcrystalline silicon films were studied by X-ray diffraction spectroscopy (XRD) and optical emission spectroscopy (OES). Volume fraction of (220) orientation crystals of films without incorporating nano-particles is higher than that of those with nano-particles. The IH?/ISi* value in the region with nano-particles is slightly higher than that in the region without nano-particles. The ISi*/ISiH* value is almost the same as that in the region with and without nano-particles. These results suggest that (220) orientation crystal growth is suppressed by incorporation of nano-particles.
Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste

Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani

Proc. PVSEC-21 page： 3D-5P-09 2011.1
Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers

K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

Proc. PVSEC-21 page： 4D-2P-11 2011.1
Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization

N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

Proc. PVSEC-21 page： 4D-2P-10 2011.1
Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD

K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani

Proc. Plasma Conf. 2011 page： 24P014-O 2011.1

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We have investigated effects of plasma fluctuation on the growth of nanoparticles in capacitively-coupled rf discharges with amplitude modulation. Nanoparticles grow more slowly for higher AM levels, that is they have 7 times higher density and 23% smaller size. This AM method is useful for the production of a large amount of nanoparticles with a small size
Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD

Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Proc. Plasma Conf. 2011 page： 24P011-O 2011.1

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To evaluate radical fluxes for microcrystalline silicon film deposition, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. Film crystallinity varied with the distance from the powered electrode. Based on the film deposition rate and Raman crystallinity, we proposed a method to estimate hydrogen flux. This evaluation of hydrogen flux is one of useful way to understand a process window of ?c-Si:H films.
Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase Reviewed Open Access

Naho Itagaki, Kazunari Kuwahara, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

APPLIED PHYSICS EXPRESS Vol. 4 ( 1 ) 2011.1

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1143/APEX.4.011101

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Generation and Surface Modification of Si nano-particles using SiH4/H-2 and N-2 Multi-hollow Discharges and their Application to the Third Generation Photovoltaics Reviewed

Kazunori Koga, Giichiro Uchida, Kosuke Yamamoto, Munenori Sato, Yuki Kawashima, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011) Vol. 1393 page： 27 - 30 2011

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1063/1.3653600

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Control of Size Distribution of Nanoparticles using AM RF Discharges

Shiratani Masaharu, Kamataki Kunihiro, Nishiyama Katsushi, Koga Kazunori, Uchida Giichiro, Itagaki Naho

Record of Joint Conference of Electrical and Electronics Engineers in Kyushu Vol. 2011 page： 610 - 610 2011

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Publisher：Committee of Joint Conference of Electrical, Electronics and Information Engineers in Kyushu

DOI： 10.11527/jceeek.2011.0_610

CiNii Research
Effect of high Xe-concentration in a plasma display panel with a SrCaO cold cathode Reviewed

Giichiro Uchida, Satoshi Uchida, Toshiyuki Akiyama, Hiroshi Kajiyama, Tsutae Shinoda

JOURNAL OF APPLIED PHYSICS Vol. 107 ( 10 ) 2010.5

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.3372612

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49.3: Discharge characteristics of PDPs with the ternary oxides protective layers manufactured by using all-in-vacuum process

Yano T., Tsukuba K.U., Uchida G., Shinoda T., Kajiyama H.

Digest of Technical Papers SID International Symposium Vol. 41 1 page： 739 - 741 2010.5

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Publisher：Digest of Technical Papers SID International Symposium

The discharge characteristics of PDPs with the protective layers of MgO based ternary oxides are investigated. The panels with a gas mixture of Ne-Xe20% are manufactured by "all-in-vacuum" process, in which the front panels are processed without an exposure to ambient air after the deposition of protective layer. Compared with PDPs with conventional MgO protective layer, a discharge voltage is lowered by 40V and a discharge time lag is shortened within 1 μs. © 2010 SID.

DOI： 10.1889/1.3500576

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Discharge analysis of SrO- and SrCaO-cathode PDP operated at lower voltage Reviewed

Uchida Giichiro, Uchida Satoshi, Kajiyama Hiroshi, Shinoda Tsutae

Transactions of the Materials Research Society of Japan Vol. 35 ( 3 ) page： 575 - 578 2010.3

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We present the measurement on SrO- and SrCaO-cathode PDP operated at lower voltage. SrO- and SrCaO-cathode PDP attain high luminous efficacy at low voltage, where the breakdown voltage is 30% lower than that of the ordinal MgO-cathode PDP. Emission measurements clearly demonstrate that the SrO- and SrCaO-cathode PDP have a weak discharge with small current flow and low electron energy, which is appropriate for high luminous efficacy of PDP. Also, the direct measurement of VUV radiation from a PDP small cell shows that increasing Xe gas pressure leads to a drastic increase in excimer radiation (172 nm) from Xe molecule, which also considerably contributes to the high luminous efficacy of PDP.

DOI： 10.14723/tmrsj.35.575

CiNii Research
Analysis of transient electron energy in a micro dielectric barrier discharge for a high performance plasma display panel Reviewed Open Access

Giichiro Uchida, Satoshi Uchida, Hiroshi Kajiyama, Tsutae Shinoda

JOURNAL OF APPLIED PHYSICS Vol. 107 ( 2 ) 2010.1

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.3291123

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Carbon dust particles generated due to H2 plasma-carbon wall interaction Reviewed

H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group

Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma Vol. 55 ( 7 ) page： CTP.00114 2010.1
Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges Reviewed

G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma Vol. 55 ( 7 ) page： CTP.00093 2010.1
Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges

G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

Proc. of MNC2010 page： 12D-11-66 2010.1
Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

Proc. of International Symposium on Dry Process page： 43 - 44 2010.1
DEPOSITION OF CLUSTER-FREE P-DOPED A-SI:H FILMS USING A MULTI-HOLLOW DISCHARGE PLASMA CVD METHOD Reviewed

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE page： 3722 - 3725 2010

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DOI： 10.1109/PVSC.2010.5616514

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Cluster-free B-doped a-Si:H films deposited using SiH4+B10H14 multi-hollow discharges Reviewed

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 2216 - 2218 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/TENCON.2010.5686686

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49.3: Discharge characteristics of PDPs with the ternary oxides protective layers manufactured by using all-in-vacuum process

Takanobu Yano, Kazuya Uchida, Giichiro Uchida, Tsutae Shinoda, Hiroshi Kajiyama

48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 Vol. 2 page： 739 - 741 2010

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Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD Reviewed

Takeaki Matsunaga, Yuki Kawashima, Kazunori Koga, Kenta Nakahara, William Makoto Nakamura, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 2219 - 2221 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/TENCON.2010.5686679

Web of Science

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Effects of Ar addition on breakdown voltage in a Si(CH3)(2)(OCH3)(2) RF discharge

Giichiro Uchida, Shota Nunomutra, Hiroshi Miyata, Shinya Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 2199 - 2201 2010

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Language：English

DOI： 10.1109/TENCON.2010.5686704

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Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasmas Reviewed

Kunihiro Kamataki, Hiroshi Miyata, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 1943 - 1947 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/TENCON.2010.5686456

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Fluctuation Control for Plasma Nanotechnologies Reviewed

Masaharu Shiratani, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： XII - XVI 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/TENCON.2010.5685920

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Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD Reviewed

Yuki Kawashima, Kousuke Yamamoto, Muneharu Sato, Takeaki Matsunaga, Kenta Nakahara, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Michio Kondo

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 2222 - 2224 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/TENCON.2010.5686677

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Growth Stimulation of Radish Sprouts Using Discharge Plasmas

Kitazaki, S; Yamashita, D; Matsuzaki, H; Uchida, G; Koga, K; Shiratani, M; Hayashi, N

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE page： 1960 - 1963 2010

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We have investigated growth stimulation of radish sprouts using nonthermal atmospheric pressure He discharge plasmas and low pressure O<inf>2</inf> RF discharge plasmas. Seeds of radish sprouts were irradiated by one of these plasmas. After 7 days cultivation, the average length of sprouts with irradiation was 15-60 % longer than those without irradiation. Reactive oxygen species may be involved in the growth stimulation mechanism. © 2010 IEEE.

DOI： 10.1109/TENCON.2010.5686474

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Scopus
SI QUANTUM DOT-SENSITIZED SOLAR CELLS USING SI NANOPARTICLES PRODUCED BY PLASMA CVD Reviewed

Yuki Kawashima, Kousuke Yamamoto, Muneharu Sato, Kenta Nakahara, Takeaki Matsunaga, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Michio Kondo

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE page： 3347 - 3351 2010

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/PVSC.2010.5617205

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Discharge characteristics of PDPs with high γ protective layer manufactured by using "all-in-vacuum" process

Yano T., Uchida G., Uchida K., Awaji N., Shinoda T., Kajiyama H.

Idw 09 Proceedings of the 16th International Display Workshops Vol. 3 page： 1933 - 1935 2009.12

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The PDPs with high γ protective layer consisting of SrCaO are perfectly manufactured by using the "all-in-vacuum" process without exposing a protecting layer to ambient air. The SrCaO panel with Ne/Xe(20%) shows 2.3 times larger luminous and 1.7 times larger luminous efficacy compared with that of MgO panel with Ne/Xe(4%), where two panels have almost same breakdown voltage. The SrCaO-PDP(Xe:20%) also shows the almost same discharge time-lag with MgO-PDP(4%), which means that high performance SrCaO-PDP manufactured by our "all-in-vacuum"process can be operated using conventional driving wave-form for MgO-PDP.

Scopus
Discharge characteristics of PDPs with high γ protective layer manufactured by using "all-in-vacuum" process

Yano T., Uchida G., Uchida K., Awaji N., Shinoda T., Kajiyama H.

Idw 09 Proceedings of the 16th International Display Workshops Vol. 3 page： 1933 - 1935 2009.12

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Publisher：Idw 09 Proceedings of the 16th International Display Workshops

The PDPs with high γ protective layer consisting of SrCaO are perfectly manufactured by using the "all-in-vacuum" process without exposing a protecting layer to ambient air. The SrCaO panel with Ne/Xe(20%) shows 2.3 times larger luminous and 1.7 times larger luminous efficacy compared with that of MgO panel with Ne/Xe(4%), where two panels have almost same breakdown voltage. The SrCaO-PDP(Xe:20%) also shows the almost same discharge time-lag with MgO-PDP(4%), which means that high performance SrCaO-PDP manufactured by our "all-in-vacuum"process can be operated using conventional driving wave-form for MgO-PDP.

Scopus
Characteristics of a micro dielectric barrier discharge ignited by a cold cathode with high ion-induced secondary electron emission for plasma display panel Reviewed Open Access

Giichiro Uchida, Satoshi Uchida, Hiroshi Kajiyama, Tsutae Shinoda

JOURNAL OF APPLIED PHYSICS Vol. 106 ( 9 ) 2009.11

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.3253723

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Influence of gas pressure and applied voltage on Xe excimer radiation from a micro dielectric barrier discharge for plasma display panel Reviewed

Giichiro Uchida, Satoshi Uchida, Hiroshi Kajiyama, Tsutae Shinoda

JOURNAL OF APPLIED PHYSICS Vol. 106 ( 7 ) 2009.10

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DOI： 10.1063/1.3236508

Web of Science

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Liquid-crystal phase transition by electron shower in a direct current complex plasma Reviewed

Giichiro Uchida, Satoru Iizuka, Noriyoshi Sato

PHYSICS OF PLASMAS Vol. 16 ( 8 ) 2009.8

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DOI： 10.1063/1.3205879

Web of Science

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Generation of two-dimensional dust vortex flows in a direct current discharge plasma Reviewed

Giichiro Uchida, Satoru Iizuka, Tetsuo Kamimura, Noriyoshi Sato

PHYSICS OF PLASMAS Vol. 16 ( 5 ) 2009.5

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.3139252

Web of Science

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Cathode luminescence study of MgO

Kitagaki M., Wang C.L., Ding N., Zhang X.Y., Uchida G., Wu S.L., Shinoda T., Kajiyama H.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 3 page： 1999 - 2000 2008.12

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A cathode luminescence spectroscopy is applied to discuss the electronic properties of MgO. The measurements at various temperatures below 300 K suggest that the UV luminescence peaked at 240 nm is due to the exciton formation.

Scopus
Cathode luminescence study of SrO

Kajiyama H., Uchida G., Akiyama T., Kitagawa M., Shinoda T.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 3 page： 2001 - 2002 2008.12

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A cathode luminescence spectroscopy is applied to discuss the electronic properties of SrO thin film. The measurements at various temperatures below 300 K suggest that the UV luminescence peaked at 245 nm is due to the exciton formation.

Scopus
Direct observation of vacuum ultraviolet radiation from AC-PDPs with narrow sustaining electrode

Xing F., Uchida G., Awaji N., Kajiyama H., Shinoda T.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 3 page： 1997 - 1998 2008.12

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We study experimentally AC-PDP with the narrow sustaining electrode (W <inf>ITO</inf>) in high Xe contents. The specialized-PDP with narrow W <inf>ITO</inf> achieves high luminous efficacy. The VUV measurement also shows that narrow W<inf>ITO</inf> leads to the strong excimer radiation.

Scopus
Discharge voltage of PDPs with reactive protecting layer

Yano T., Uchida G., Uchida K., Awaji N., Shinoda T., Kajiyama H.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 3 page： 2003 - 2004 2008.12

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Plasma display panels are manufactured in a vacuum condition. As a protecting layer, MgO, CaO, SrO and SrCaO with various compositions are used. It is demonstrated that the panels processed in vacuum shows a lower discharge voltages and higher luminous efficacy compared with the conventional ones.

Scopus
Observation of vacuum ultraviolet radiation from SrO- and SrCaO-PDP operated at lower voltage

Uchida G., Xing F., Uchida S., Yano T., Awaji N., Kajiyama H., Shinoda T.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 2 page： 781 - 784 2008.12

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Here is presented the measurement on SrO- and SrCaO-PDP operated at lower voltage. SrO- and SrCaO-PDP attained high luminous efficacy at low voltage, where the breakdown voltage is 30 % lower than that of the ordinary MgO-PDP. Direct observation of vacuum ultraviolet radiation also shows that the excimer production is more efficient for high Xe contents and high sustaining voltage.

Scopus
PDP manufacturing system under vacuum condition

Uchida K., Uchida G., Yano T., Kajiyama H., Shinoda T.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 3 page： 1899 - 1902 2008.12

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A PDP manufacturing method suitable for energy and cost savings is demonstrated. In the method, the panel processing after MgO deposition and panel sealing are all completed under a controlled vacuum circumstance. As a result, the shorter aging time for stable discharge and the lower firing voltage is successfully achieved.

Scopus
Role of High γprotective layer in luminous efficacy in PDPs

Kajiyama H., Uchida G., Shinoda T.

SID Conference Record of the International Display Research Conference page： 294 - 297 2008.12

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Publisher：SID Conference Record of the International Display Research Conference

For plasma display panels (PDPs), the performance of protective layers is extremely important, since it determines VUV generation efficacy and discharge time-lag. The performance of protective layers has been evaluated mainly by two kinds of physical quantity: secondary electron emission coefficient (γ) and mean free path (λ) of conduction electrons. This paper discusses how the protective layer with higher y affects the discharge dynamics of micro-plasma in PDPs. © 2008 SID.

Scopus
Temperature dependence of photoluminescence spectroscopy and thermoluminescence property on Eu-Doped BaMgAl10O17 and SrMgAl10O17

Tanno H., Zhang S., Uchida G., Shinoda T., Kajiyama H.

Idw 08 Proceedings of the 15th International Display Workshops Vol. 2 page： 869 - 872 2008.12

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Publisher：Idw 08 Proceedings of the 15th International Display Workshops

The temperature dependence of photoluminescence spectroscopy and thermoluminescence property on BAM:Eu and SAM.Eu are investigated. Peak shift of PL spectroscopy on SAM.Eu is largely observed between 50 and 300 K compared with BAM:Eu. The TL results reveal that the states of europium occupied in BAM and SAM should be different.

Scopus
PDP Researches at Hiroshima University

Hiroshi Kajiyama, Giichiro Uchida, Tsutae Shinoda

Proceedings of International Meeting on Information Display Vol. 8 page： 1613 - 1616 2008

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Language：English Publishing type：Research paper (international conference proceedings)

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Evaluation of AC-PDP with SrO protective layer

UCHIDA Giichiro, KAJIYAMA Hiroshi, SHINODA Tsutae

ITE Technical Report Vol. 32 page： 37 - 40 2008

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Language：Japanese Publisher：The Institute of Image Information and Television Engineers

Here is presented the measurements on SrO-PDP operated at lower voltage. The SrO-panel shows the lower breakdown voltage, the high luminous efficacy, and the stable discharge compared with MgO-panel for the Xe concentration of 4 %. The optical emission spectroscopy is also performed to analyze the electron energy. The measurement shows SrO-cathode discharge has lower electron energy due to the lower operation voltage.

DOI： 10.11485/itetr.32.31.0_37

CiNii Research
Improve of secondary electron emission property of MgO protective layer by impurity addition

KITAGAKI Masaki, UCHIDA Giichiro, SHINODA Tsutae, KAJIYAMA Hiroshi

ITE Technical Report Vol. 32 page： 41 - 44 2008

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Language：Japanese Publisher：The Institute of Image Information and Television Engineers

MgO based protective layers with finite secondary electron emission coefficient by Xe^+, γ(Xe), are synthesized and their effect on firing voltage is measured in AC-PDPs. It is measured that the slight increase of γ(Xe) by an order of 0.01 reduces the firing voltage and that the reduction becomes larger at higher Xe content.

DOI： 10.11485/itetr.32.31.0_41

CiNii Research
Direct observation of vacuum ultraviolet emission from alternating-current plasma display panel

Uchida G., Kajiyama H., Shinoda T.

Idw 07 Proceedings of the 14th International Display Workshops Vol. 2 page： 865 - 868 2007.12

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Publisher：Idw 07 Proceedings of the 14th International Display Workshops

Here is presented direct observation of vacuum ultraviolet radiation from alternating-current plasma display (AC-PDP) with Ne/Xe gas mixtures. Measurement shows that high ultraviolet-radiation efficiency is attained especially for high Xe contents. The change of electron energy is also analyzed from Ne and Xe emission spectra. There is considerable effect of Xe contents on electron energy. Our experiment shows that electron energy directly affects the ultraviolet-radiation efficiency.

Scopus
Effect of secondary electron emission by Xe+ on firing voltage in AC-PDPs

Kitagaki M., Uchida K., Tsutsumi K., Uchida G., Kajiyama H., Shinoda T.

Idw 07 Proceedings of the 14th International Display Workshops Vol. 1 page： 213 - 214 2007.12

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Publisher：Idw 07 Proceedings of the 14th International Display Workshops

MgO based protective layers with finite secondary electron emission coefficient by Xe+, γ<inf>(Xe)</inf>, are synthesized and their effect on firing voltage is measured in AC-PDPs. It is measured that the slight increase of γ<inf>(Xe)</inf> by an order of 0.01 reduces the firing voltage and that the reduction becomes larger at higher Xe content.

Scopus
Plasma treatment of RGB phosphors for PDP application

Tanno H., Egoshi K., Uchida G., Zhang S., Fukasawa T., Shinoda T., Kajiyama H.

Idw 07 Proceedings of the 14th International Display Workshops Vol. 3 page： 2147 - 2150 2007.12

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The suppression of plasma degradation of RGB phosphors is tried using hydrogen plasma treatment. It is shown that BAM:Eu2+(B)and Zn <inf>2</inf>SiO<inf>4</inf>:Mn2+ (G) gets higher resistance against for Ne+Xe plasma irradiation, while the lifetime of (Y, Gd)BO <inf>3</inf>:Eu3+ (R) is unchanged by hydrogen plasma treatment.

Scopus
Proposal of auger ion spectroscopy for direct observation of midgap states of MgO

Kajiyama H., Kitagaki M., Tsutsumi K., Uchida K., Uchida G., Shinoda T.

Idw 07 Proceedings of the 14th International Display Workshops Vol. 2 page： 799 - 802 2007.12

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Photoemissions induced by Auger reaction between incident inert ions and MgO surface are measured. It is shown that the midgap states such as F-type centers could be observed.

Scopus
Role of oxygen vacancy in BaMgAl10O17 : Eu 2+ energy transfer process

Tanno H., Zhang S., Uchida G., Shinoda T., Kajiyama H.

AD 07 Proceedings of Asia Display 2007 Vol. 1 page： 779 - 784 2007.12

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Publisher：AD 07 Proceedings of Asia Display 2007

The role of oxygen vacancy in undoped and Eu-doped BaMgAl <inf>10</inf>O<inf>17</inf> (BAM) phosphors has been investigated under vacuum ultraviolet (VUV) excitation. From the results of photolumiescence (PL) and thermoluminescence (TL), it is found that the host emission from BAM is relative to oxygen vacancy which induces electron traps in BAM. According to the change of PL and TL characteristics in the undoped and Eu-doped BAM, we propose a model to explain the radiative and non-radiative energy trasfer processes in BAM: Eu2+ under VUV excitation.

Scopus
Role of oxygen vacancy in BaMgAl10O17 : Eu2+ energy transfer process Reviewed

Hiroaki Tanno, Shuxiu Zhang, Giichiro Uchida, Tsutae Shinoda, Hiroshi Kajiyama

AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2 page： 779 - 784 2007

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Language：English Publishing type：Research paper (international conference proceedings)

Web of Science
Baking and plasma-irradiating induced degradations in BaMgAl 10O17

Tanno H., Zhang S., Fukasawa T., Uchida G., Kajiyama H., Kono T., Yasaka T., Shinoda T.

Idw 06 Proceedings of the 13th International Display Workshops Vol. 2 page： 1235 - 1238 2006.12

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Publisher：Idw 06 Proceedings of the 13th International Display Workshops

The degradation processes induced by baking and plasma irradiation in undoped and Eu-doped BAM (BaMgAl<inf>10</inf>O<inf>17</inf>) are investigated by photoluminescence (PL) and thermoluminescence (TL) spectroscopy. The PL and TL spectra of undoped BAM change little in baking process. The TL spectra of Eu-doped BAM indicates that the baking process shakes down the number density of original electron traps, whereas a deep electron trap is newly formed at 300 K. As for a plasma irradiation, it has severe effect on the original electron traps in BAM host but only a slight effect on Eu-doped BAM. Thus the degradation processes induced by baking and plasma irradiation are quite different and they depend on the oxidation of Eu2+ and the stability of BAM host.

Scopus
Evaluation of discharge voltage in AC-PDP manufactured under the vacuum condition after MgO deposition

Uchida K., Uchida G., Kurauchi T., Terasawa T., Kajiyama H., Shinoda T.

Idw 06 Proceedings of the 13th International Display Workshops Vol. 1 page： 347 - 350 2006.12

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Publisher：Idw 06 Proceedings of the 13th International Display Workshops

A new PDP manufacturing method in which processes, such as deposition of MgO, and sealing of front and rear plate, are carried out in succession under the vacuum condition is proposed. During the process, MgO surface is expected to be kept clean. We have evaluated the firing voltage by using a 4-inch PDP test panel. The measured result shows that the firing voltage is stabilized in a brief time from the beginning of the measurement. The developed method is considerably effective for decreasing the aging process time.

Scopus
Ion-induced secondary electron emission from 12CaO.7AI2O 3 electride

Webster S., Ono-Kuwahara M., Ito S., Tsutsumi K., Uchida G., Kajiyama H., Shinoda T.

Idw 06 Proceedings of the 13th International Display Workshops Vol. 1 page： 345 - 346 2006.12

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A significant secondary electron emission, SEE, by Xe+ was observed for 12CaO-7AI<inf>2</inf>O<inf>3</inf> crystals with 'F +-like center' concentration, N, of 1019 to 10 21 cm-3 (so-called C12A7 electride) prepared using aluminum or carbon as reducing reagents. The SEE yield by Xe+ was increased with increasing N and reached -0.2 at N=1021 cm 3, which may be attributed to F+-like center inherent to C12A7 electride, that gives a small work function of 0.6-2.1 eV to the present material.

Scopus
Temperature dependence of the exciton emission from BaMgAl 10O17

Kajiyama H., Tanno H., Zhang S., Uchida G., Kono T., Yasaka T., Shinoda T.

Idw 06 Proceedings of the 13th International Display Workshops Vol. 1 page： 369 - 372 2006.12

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Publisher：Idw 06 Proceedings of the 13th International Display Workshops

Temperature dependence of photoluminescence (PL) and thermoluminescence (TL) are measured on BaMgAI<inf>10</inf>O<inf>17</inf> (BAM) between 50 and 500 K. The exciton emission peak shifts from 270 to 242 nm and its intensity increases significantly, as the sample temperature decreases. The TL measurement supports the idea that the oxygen vacancies in BAM affect the exciton emission properties. Based on the results, the electron transport mechanism before exciton formation is proposed, in which electrons have undergone a non-radiative transition and this frequent is depending on the temperature.

Scopus
Temporal evolution of optical emission spectra from alternating-current plasma display panel

Uchida G., Kajiyama H., Shinoda T.

Idw 06 Proceedings of the 13th International Display Workshops Vol. 2 page： 1131 - 1134 2006.12

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Here is presented experiment on temporal evolution and spatial distribution of optical emission spectra from alternating-current plasma display panel (AC-PDP). Measurement shows that the relative emission intensity (I <inf>Ne(585nm)</inf>/I<inf>Xe(823nm)</inf>) which is induced from Ne and Xe atom, drastically changes in each discharge stage and each spatial region. In initial discharge, Intensity of Ne emission (I<inf>Ne(585nm)</inf>) is much stronger than that of Xe emission (I<inf>Xe(823nm)</inf>) in cathode and anode region, and I<inf>Ne(585nm)</inf>/I<inf>Xe(823nm)</inf> decreases with an increase in discharge time (t<inf>d</inf>). There is also considerable effect of discharge voltage (V<inf>s</inf>) and gas pressure (P<inf>Ne/Xe</inf>) on I<inf>Ne(585nm)</inf>/I<inf>Xe(823nm)</inf>. The time-resolved measurement of optical emission spectra is useful to investigate the electron temperature (T<inf>e</inf>) in PDP.

Scopus
Secondary electron emission from MgO on metal substrate

Kajiyama H., Tsutsumi K., Fukasawa T., Ishimoto M., Uchida G., Nishio T., Shinoda T.

Idw AD 05 Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 ( 1 ) page： 431 - 434 2005.12

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Publisher：Idw AD 05 Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

Secondary electron emission coefficient, γ, of MgO deposited on a metal substrate was measured at the temperatures below and above the deposition temperatures. The γ was temperature dependent and had a broad convex peak at the temperature a little bit higher than the deposition temperature. The mechanism of temperature dependence of γ is discussed based on the thermal stress induced by the mismatch of thermal expansion coefficient between an MgO film and a metal substrate.

Scopus
Temperature dependence of secondary electron emission from MgO

Tsutsumi K., Ishimoto M., Fukasawa T., Uchida G., Kajiyama H., Shinoda T.

Idw AD 05 Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 ( 2 ) page： 1515 - 1517 2005.12

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Publisher：Idw AD 05 Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

Secondary electron emission (SEE) from MgO is measured at the temperatures between 373 and 673 K. The sample is the one deposited at 523 K on indium tin oxide (ITO) coated glass substrate. We find that there are three SEE phases depending on the temperatures: low emission phase above 573 K, high emission phase below 423 K and transition phase at intermediate temperatures.

Scopus
Wave propagation of a plasma crystal in a magnetic field

Uchida G., Konopka U., Morfill G.

IEEE International Conference on Plasma Science 2004.12

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Publisher：IEEE International Conference on Plasma Science

Micro particles that are introduced into a plasma environment charge up to a high negative value due to ion and electron bombardment. As a result of the strong Coulomb interaction?between the particles often so-called "plasma crystals" are built up. These systems show a variety of wave phenomena like dust acoustic waves, dust shear waves, etc. that have been investigated partially only. In this paper, the wave dispersion relation is analyzed in a two-dimensional plasma crystal under magnetic field influence by theoretical analysis and molecular dynamics simulation. An expression for the wave dispersion relation clearly shows that the longitudinal and the transverse modes in a plasma crystal are coupled due to the Lorenz force acting on dust particles. The dispersion relation has a high- and a low- frequency branch. Our analysis shows that the high-frequency branch has a cut-off at the cyclotron frequency of the dust particles, and the wave polarization drastically changes with magnetic field strength. In this presentation, we also report on the experimental results of the wave propagation in a magnetized dusty plasma.

Scopus
Wave dispersion relation of two-dimensional plasma crystals in a magnetic field Reviewed

G Uchida, U Konopka, G Morfill

PHYSICAL REVIEW LETTERS Vol. 93 ( 15 ) page： 155002-1 - 155002-4 2004.10

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1103/PhysRevLett.93.155002

Web of Science

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PubMed
Fine particle removal by a negatively-charged fine particle collector in silane plasma Reviewed

Y Kurimoto, N Matsuda, G Uchida, S Iizuka, M Suemitsu, N Sato

THIN SOLID FILMS Vol. 457 ( 2 ) page： 285 - 291 2004.6

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.tsf.2003.11.300

Web of Science

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Rotation of Strongly-Coupled Fine Particles in a Magnetized RF Plasma Reviewed

S. Shimizu, G. Uchida, T. Kaneko, S. Iizuka, N. Sato

Proceedings of the 25th International Conference on Phenomena in Ionized Gases Vol. 3 page： 39 - 40 2001.7

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Dynamics of fine particles in magnetized plasmas Reviewed Open Access

N Sato, G Uchida, T Kaneko, S Shimizu, S Iizuka

PHYSICS OF PLASMAS Vol. 8 ( 5 ) page： 1786 - 1790 2001.5

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1063/1.1342229

Web of Science

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Fine-particle clouds controlled in a DC discharge plasma Reviewed Open Access

G Uchida, S Iizuka, N Sato

IEEE TRANSACTIONS ON PLASMA SCIENCE Vol. 29 ( 2 ) page： 274 - 278 2001.4

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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1109/27.923707

Web of Science

Scopus
Effect of Plasma Parameter Profiles on the Rotation of Fine-Particle Cloud Reviewed

T. Kaneko, S. Shimizu, G. Uchida, S. Iizuka, N. Sato

Proceedings of Plasma Science Symposium 2001 / The 18th Symposium on Plasma Processing page： 403 - 404 2001.1

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Rotation Control of Fine-Particle Clouds in a Magnetized RF Plasma Reviewed

S. Shimizu, G. Uchida, T. Kaneko, S. Iizuka, N. Sato

Proceedings of Plasma Science Symposium 2001 / The 18th Symposium on Plasma Processing page： 401 - 402 2001.1

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Fine-Particle Flow Generated in a Plasma. Open Access

Uchida Giichiro, Iizuka Satoru, Kamimura Tetsuo, Sato Noriyoshi

Meeting Abstracts of the Physical Society of Japan Vol. 55 page： 153 - 153 2000

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Language：Japanese Publisher：The Physical Society of Japan

DOI： 10.11316/jpsgaiyo.55.1.2.0_153_2

Open Access

CiNii Research
Vertical spread of fine-particle clouds in a magnetized DC plasma Reviewed

S Iizuka, R Ozaki, G Uchida, N Sato

FRONTIERS IN DUSTY PLASMAS page： 453 - 456 2000

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1016/B978-044450398-5/50071-3

Web of Science
Structure controls of fine-particle clouds in DC discharge plasmas Reviewed

N Sato, G Uchida, R Ozaki, S Iizuka, T Kamimura

FRONTIERS IN DUSTY PLASMAS page： 329 - 336 2000

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1016/B978-044450398-5/50044-0

Web of Science
Formation of ring-shaped fine-particle clouds in a DC plasma Reviewed

G Uchida, R Ozaki, S Iizuka, N Sato

FRONTIERS IN DUSTY PLASMAS page： 449 - 452 2000

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1016/B978-044450398-5/50070-1

Web of Science
Vertical string structure of pine particles in a magnetized DC plasma Reviewed

R Ozaki, G Uchida, S Iizuka, N Sato

FRONTIERS IN DUSTY PLASMAS page： 457 - 460 2000

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DOI： 10.1016/B978-044450398-5/50072-5

Web of Science
Reverse motion of organelles with myosin molecules along bundles of the actin filaments in a Characean internodal cell

Uchida, G; Chinzei, T; Matsuura, H

BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS Vol. 257 ( 1 ) page： 223 - 227 1999.4

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DOI： 10.1006/bbrc.1999.0444

Web of Science

PubMed
Fine-particle Coulomb lattices formed and controlled in dc discharge plasmas Reviewed

N Sato, G Uchida, R Ozaki, S Iizuka

PHYSICS OF DUSTY PLASMAS Vol. 446 page： 239 - 246 1998

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Web of Science
Potential-driven vortices of strongly-coupled fine particles in a plasma Reviewed

S Iizuka, G Uchida, T Kamimura, N Sato

PHYSICS OF DUSTY PLASMAS Vol. 446 page： 175 - 178 1998

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Web of Science
STOCHASTIC-BEHAVIOR OF ORGANELLE MOTION IN NITELLA INTERNODAL CELLS

NEMOTO, T; UCHIDA, G; TAKAMATSU, A; TSUCHIYA, Y

BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS Vol. 214 ( 3 ) page： 1102 - 1107 1995.9

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DOI： 10.1006/bbrc.1995.2399

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PubMed
HIGH-PERFORMANCE LIQUID-CHROMATOGRAPHIC DETERMINATION OF PRIMARY AROMATIC-AMINES IN URINE AFTER DERIVATIZATION TO AN AZO-DYE WITH 2-AMINOANTHRACENE

HAYASHI, T; AMINO, M; UCHIDA, G; SATO, M

JOURNAL OF CHROMATOGRAPHY B-BIOMEDICAL APPLICATIONS Vol. 665 ( 1 ) page： 209 - 212 1995.3

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DOI： 10.1016/0378-4347(94)00524-9

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MISC 120

Direct Joining of Metals with Organic Materials Using Non-Equilibrium Atmospheric Pressure Plasma Jets

節原裕一, 竹中弘祐, 内田儀一郎

表面技術 Vol. 76 ( 1 ) 2025

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Effect of Treatment by Atmospheric Pressure Non-equilibrium Plasma Jet on Adhesive Bonding of Metals and Polymer Materials

竹中弘祐, 小鑓亮輔, 重森俊祥, 都甲将, 内田儀一郎, 節原裕一

応用物理学会学術講演会講演予稿集(CD-ROM) Vol. 72nd 2025

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Physical and Chemical Effects of Atmospheric-Pressure Non-Equilibrium RF Plasma Jet Treatment on Surface of Polyetheretherketone

竹中弘祐, 中本壮太郎, 島袋将弥, 陣田尭哉, 小鑓亮輔, 重森俊祥, 上野航季, 都甲将, 内田儀一郎, 川下将一, 節原裕一

応用物理学会学術講演会講演予稿集(CD-ROM) Vol. 86th 2025

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Direct bonding of dissimilar materials using atmospheric pressure non-equilibrium plasma jet

竹中弘祐, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 85th 2024

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Dissimilar material bonding of engineering plastics and metals by surface treatment using atmospheric pressure high-frequency plasma jet

竹中弘祐, 小鑓亮輔, 重森俊祥, 中本壮太郎, 陣田尭哉, 都甲将, 内田儀一郎, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 71st 2024

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Effect of Atmospheric Pressure Non-equilibrium RF Plasma Jet Irradiation on Direct Bonding of Metal-Organic Dissimilar Materials

竹中弘祐, 中本壮太郎, 小鑓亮輔, 都甲将, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 84th 2023

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Development of organic material-metal dissimilar material bonding technology using atmospheric pressure non-equilibrium plasma jet

竹中弘祐, 中本壮太郎, 小鑓亮輔, 都甲将, 内田儀一郎, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 70th 2023

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Development of Plasma-Assisted Reactive Processes for Large-Area Uniform Formation of High-Mobility IGZO Thin Film Transistors

竹中弘祐, 吉谷友希, 都甲将, 内田儀一郎, 江部明憲, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 69th 2022

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Amorphous InGaZnOx thin film formation by a plasma-assisted reactive process.

竹中弘祐, 内田儀一郎, 江部明憲, 節原裕一

応用物理 Vol. 90 ( 1 ) 2021

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Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes (III)

竹中弘祐, 平山裕之, 藤村知輝, 林祐仁, 内田儀一郎, 江部明憲, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 68th 2021

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Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes (IV)

竹中弘祐, 林祐仁, 小松響, 都甲将, 内田儀一郎, 江部明憲, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 82nd 2021

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Formation of Functional Materials by Oxidation/Nitridation using Ion/Radical Flux Control Technique

竹中弘祐, 内田儀一郎, 節原裕一, 岡田健

東北大学流体科学研究所共同利用・共同研究拠点流体科学国際研究教育拠点活動報告書 Vol. 2018 2020

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Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes(II)

節原裕一, 竹中弘祐, 平山裕之, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 67th 2020

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非平衡プラズマが拓くパラダイム-薄膜トランジスタ形成から医療,異材接合まで-

竹中弘祐, 節原裕一, 内田儀一郎, 江部明憲

生産と技術 Vol. 72 ( 4 ) 2020

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水の科学と応用大気圧非平衡プラズマによる水中活性種の生成・制御

節原裕一, 節原裕一, 内田儀一郎, 竹中弘祐

金属 Vol. 89 ( 6 ) page： 469‐474 2019.6

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J-GLOBAL
プラズマ支援反応性プロセスを用いた大面積基板へのIGZO薄膜トランジスタの形成

節原裕一, 竹中弘祐, 吉谷友希, 平山裕之, 遠藤雅, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 66th 2019

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反応性プラズマプロセスを用いた高移動度IGZO薄膜トランジスタの低温形成

節原裕一, 竹中弘祐, 平山裕之, 遠藤雅, 内田儀一郎, 江部明憲

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 80th 2019

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プラズマジェット照射が誘起する液体流に雰囲気ガスが与える影響

川崎敏之, 川口諒, 西田佳祐, 間結夏, 内田儀一郎, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治

静電気学会講演論文集 Vol. 2018 2018

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プラズマ誘起流のPIV法による定量解析-酸素添加の影響-

間結夏, 川口諒, 西田佳祐, 内田儀一郎, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治, 川崎敏之

電気・情報関係学会九州支部連合大会講演論文集(CD-ROM) Vol. 71st 2018

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プラズマ誘起流のPIV法による定量解析-照射距離が与える影響-

川口諒, 西田佳祐, 間結夏, 内田儀一郎, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治, 川崎敏之

電気・情報関係学会九州支部連合大会講演論文集(CD-ROM) Vol. 71st 2018

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プラズマ誘起流のPIV法による定量解析-水質の影響-

西田佳祐, 川口諒, 間結夏, 内田儀一郎, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治, 川崎敏之

電気・情報関係学会九州支部連合大会講演論文集(CD-ROM) Vol. 71st 2018

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プラズマ支援反応性プロセスを用いた高移動度IGZO薄膜の低温形成

節原裕一, 遠藤雅, 竹中弘祐, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 65th 2018

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プラズマ支援反応性パルスDCスパッタリングによるC軸配向窒化アルミニウム薄膜の形成

竹中弘祐, 吉谷友希, 内田儀一郎, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 65th 2018

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プラズマ支援反応性スパッタ製膜を用いた高移動度IGZO薄膜トランジスタの形成(III)

竹中弘祐, 遠藤雅, 吉谷友希, 内田儀一郎, 江部明憲, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 79th 2018

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様々なプラズマ照射条件で作製したプラズマ活性培養液のがん細胞殺傷効果

内田儀一郎, 池田純一郎, 鈴木天翔, 竹中弘祐, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 79th 2018

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非平衡プラズマジェットと溶液中アミノ酸との相互作用に関する研究

内田儀一郎, 美濃祐資, 鈴木天翔, 竹中弘祐, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 65th 2018

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プラズマジェット照射によって液状ターゲットに供給されるROSの二次元分布に周囲ガスが与える影響

足立拓也, 阿南翔太, 山ノ内翔太, 内田儀一朗, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治, 川崎敏之

電気・情報関係学会九州支部連合大会講演論文集(CD-ROM) Vol. 70th 2017

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プラズマ支援反応性スパッタ製膜を用いた高移動度IGZO薄膜トランジスタの形成(II)

節原裕一, 遠藤雅, 竹中弘祐, 内田儀一郎, 江部明憲

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 78th 2017

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プラズマ支援反応性スパッタ製膜を用いた高移動度IGZO薄膜トランジスタの形成

節原裕一, 遠藤雅, 竹中弘祐, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 64th 2017

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プラズマ支援反応性スパッタ製膜による窒化アルミニウム薄膜の形成

竹中弘祐, 佐竹義旦, 内田儀一郎, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 64th 2017

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プラズマ支援パルスDCマグネトロンスパッタリングによる結晶化窒化アルミニウム薄膜の低温形成

竹中弘祐, 佐竹義旦, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 78th 2017

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長尺高周波非平衡プラズマジェットの開発

内田儀一郎, 伊藤泰喜, 竹中弘祐, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 78th 2017

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非平衡プラズマジェット照射による溶液中RNS生成におけるアミノ酸の寄与

内田儀一郎, 伊藤泰喜, 美濃裕資, 竹中弘祐, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 64th 2017

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プラズマを重畳した反応性パルススパッタリングによる窒化物薄膜の低温形成

竹中弘祐, 佐竹義旦, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 77th 2016

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プラズマ支援反応性スパッタリングを用いたアモルファスIGZO薄膜トランジスタの低温形成

節原裕一, 中田慶太郎, 佐竹義且, 竹中弘祐, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 63rd 2016

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周辺ガス制御型大気圧プラズマジェット照射による純水中RNS/ROS濃度比制御

伊藤泰喜, 内田儀一郎, 竹中弘祐, 池田純一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 77th 2016

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大気圧プラズマジェット照射による培地中ROS,RNS生成制御

内田儀一郎, 伊藤泰喜, 竹中弘祐, 池田純一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 77th 2016

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周辺雰囲気ガス制御型プラズマジェット照射による溶液中活性酸素・窒素種生成

内田儀一郎, 中島厚, 伊藤泰喜, 竹中弘祐, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 63rd 2016

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Discharge Conditions of a Non-Thermal Plasma Jet in Helium, Surrounded by Flows of Nitrogen-Oxygen Mixtures of Various Proportions

Ito Taiki, Nakajima Atsushi, Setsuhara Yuichi, Takenaka Kosuke, Uchida Giichiro

Transactions of JWRI Vol. 44 ( 2 ) page： 5 - 7 2015.12

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Language：English Publisher：Joining and Welding Research Institute, Osaka University

CiNii Research
Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD Reviewed

X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, M. Hori

Jpn. Phys. Soc. Conf. Proc (APPC12) Vol. 1 page： 015072 2015.3

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Language：English Publishing type：Research paper, summary (national, other academic conference)

DOI： 10.7566/JPSCP.1.015072
プラズマ医療装置に求められている要素と世界動向

節原裕一, 内田儀一郎, 竹中弘祐, 竹田圭吾, 石川健治, 堀勝

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 76th 2015

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プラズマ支援反応性スパッタリング法を用いたアモルファスIGZO薄膜の低温形成とその特性評価

節原裕一, 陶山悠太郎, 中田慶太郎, 竹中弘祐, 内田儀一郎, 江部明憲

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 62nd 2015

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プラズマ支援ミスト化学気相堆積におけるミストが製膜形状に与える影響

竹中弘祐, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 76th 2015

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大気圧He/O2プラズマジェット照射による液中活性酸素種生成に及ぼすガス流パターンの効果

中島厚, 内田儀一郎, 川崎敏之, 古閑一憲, SARINONT Thapanut, 天野孝昭, 竹中弘祐, 白谷正治, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 76th 2015

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液面に入射するプラズマジェットの放電特性と動的挙動

内田儀一郎, 中島厚, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 76th 2015

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気液界面を介した大気圧非平衡プラズマ照射が液体中のアミノ酸へ与える影響

竹中弘祐, 内田儀一郎, 川端一史, 中島厚, 阿部浩也, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 62nd 2015

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大気圧プラズマジェット放電特性に及ぼす放電電圧パルス幅の効果

内田儀一郎, 竹中弘祐, 川端一史, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 62nd 2015

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30aAE-11 Nanoparticle growth in nanoparticle composite plasma system

Shiratani Masaharu, Koga Kazunori, Morita Yasuhiko, Ito Teppei, Uchida Giichiro, Kamataki Kunihiro, Seo Hyunwoong, Itagaki Naho

Meeting abstracts of the Physical Society of Japan Vol. 69 ( 1 ) page： 279 - 279 2014.3

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Language：Japanese Publisher：The Physical Society of Japan (JPS)

CiNii Research
Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes

Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

Materials Science Forum Vol. 783-786 page： 2022 - 2027 2014.1

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DOI： 10.4028/www.scientific.net/MSF.783-786.2022

Scopus
SiC nanoparticle composite anode for Li-Ion batteries

Masaharu Shiratani, Kunihiro Kamataki, Giichiro Uchida, Kazunori Koga, Hyunwoong Seo, Naho Itagaki, Tatsumi Ishihara

Materials Research Society Symposium Proceedings Vol. 1678 2014

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Language：English Publisher：Materials Research Society

DOI： 10.1557/opl.2014.742

Scopus
大気圧プラズマ支援による酸化亜鉛薄膜の形成に向けたプラズマ/ミスト相互作用の解析

竹中弘祐, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 75th 2014

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気液界面を介した大気圧非平衡プラズマと生体分子との相互作用

竹中弘祐, 川端一史, 宮崎敦史, 阿部浩也, 内田儀一郎, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 75th 2014

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気液界面を介した大気圧非平衡プラズマと液体中有機物との相互作用

竹中弘祐, 宮崎敦史, 川端一史, 内田儀一郎, 阿部浩也, 節原裕一

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 61st 2014

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大気圧高周波放電プラズマの動的特性

内田儀一郎, 川端一史, 竹中弘祐, 節原裕一

応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 75th 2014

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大気圧誘電体バリア放電プラズマジェットにおける反応性粒子生成挙動-放電周波数に対す効果-

内田儀一郎, 竹中弘祐, 宮崎敦史, 川端一史, 節原裕一, 竹田圭吾, 石川健治, 堀勝

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 61st 2014

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Fabrication of highly stable a-Si:H PIN solar cells using cluster suppression method

KOGA Kazunori, HASHIMOTO Yuji, KIM Yeonwon, TOKO Susumu, SEO Hyunwoong, ITAGAKI Naho, SHIRATANI Masaharu, UCHIDA Giichiro

Vol. 2013 ( 74 ) page： 13 - 17 2013.9

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CiNii Research
Nanoparticle growth in nanoparticle composite plasma system

Shiratani Masaharu, Morita Yasuhiko, Iwashita Shinya, Koga Kazunori, Uchida Giichiro, Itagaki Naho, Seo Hyunwoong, Kamataki Kunihiro

Meeting abstracts of the Physical Society of Japan Vol. 68 ( 2 ) page： 182 - 182 2013.8

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CiNii Research
H-2/N-2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 1 ) page： 1,01AB01 2013.1

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DOI： 10.7567/JJAP.52.01AB01

Web of Science
プラズマジェットから発生する酸化性物質の可視化

山下佳亮, 河野航大, 溝口博士, 矢野裕士, 川崎敏之, 坂井美穂, 内田儀一郎, 古閑一憲, 白谷正治

応用物理学会九州支部学術講演会講演予稿集 Vol. 39 2013

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大気圧プラズマジェットによる殺菌への供給ガスの影響

川崎敏之, 佐藤京祐, 森崎久志, 馬塲啓, 梅田翔一, 坂井美穂, 内田儀一郎, 古閑一憲, 白谷正治

応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 60th 2013

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Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition

Masaharu Shiratani, Kosuke Hatozaki, Yuji Hashimoto, Yeonwon Kim, Hyunwoong Seo, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Kazunori Koga

Materials Research Society Symposium Proceedings Vol. 1426 page： 377 - 382 2012

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DOI： 10.1557/opl.2012.1245

Scopus
プラズマ異方性CVDカーボン膜の硬度のイオンエネルギー依存性

浦川達也, 鳥越隆平, SEO H., 内田儀一郎, 板垣奈穂, 板垣奈穂, 古閑一憲, 古閑一憲, 白谷正治, 白谷正治, 節原裕一, 節原裕一, 関根誠, 関根誠, 堀勝, 堀勝

応用物理学関係連合講演会講演予稿集(CD-ROM) Vol. 59th 2012

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プラズマ異方性CVDによる窒化レジスト上への硬質カーボン膜の製膜

鳥越隆平, 浦川達也, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

応用物理学会学術講演会講演予稿集(CD-ROM) Vol. 73rd 2012

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The optical analysis and application of size-controllable Si quantum dots fabricated by multi-hollow discharge plasma chemical vapor deposition

Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Materials Research Society Symposium Proceedings Vol. 1426 page： 313 - 318 2012

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DOI： 10.1557/opl.2012.890

Scopus
In-situ measurements of cluster volume fraction in silicon thin films using quartz crystal microbalances

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Hyunwoong Seo, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Materials Research Society Symposium Proceedings Vol. 1426 page： 307 - 311 2012

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DOI： 10.1557/opl.2012.839

Scopus
Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor

T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

Proc. Intern. Symp. on Dry Process Vol. 33 page： 24P007-O 2011.11

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Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure

K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

Proc. Plasma Conf. 2011 page： 23G03 2011.11

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Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon

T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

Proc. Intern. Symp. on Dry Process Vol. 33 page： 123-124 2011.11

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Coagulation and Transport of Fine Particles in Processing Plasmas

KOGA Kazunori, UCHIDA Giichiro, SHIRATANI Masaharu, NUNOMURA Shota, WATANABE Yukio

Journal of plasma and fusion research Vol. 87 ( 2 ) page： 99 - 104 2011.2

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Other Link： http://dl.ndl.go.jp/info:ndljp/pid/10458058
SiH4+B10H14マルチホロー放電プラズマCVDによるp型a-Si:Hの製膜

中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 山本康介, 内田儀一郎, 山下大輔, 松崎秀文, 板垣奈穂, 古閑一憲, 白谷正治

応用物理学関係連合講演会講演予稿集(CD-ROM) Vol. 58th 2011

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プラズマCVDカーボン膜の硬度の基板バイアス依存性

鳥越隆平, 浦川達也, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 古閑一憲, 白谷正治, 白谷正治, 節原裕一, 節原裕一, 関根誠, 関根誠, 堀勝, 堀勝

応用物理学会九州支部学術講演会講演予稿集 Vol. 37 2011

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プラズマCVDで製膜したトレンチ基板上の炭素系薄膜の製膜速度の主放電電力依存性

浦川達也, 野村卓矢, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 古閑一憲, 白谷正治, 白谷正治, 節原裕一, 節原裕一, 関根誠, 関根誠, 堀勝, 堀勝

応用物理学関係連合講演会講演予稿集(CD-ROM) Vol. 58th 2011

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微細溝への炭素薄膜の製膜形状制御における水素フラックスの効果

浦川達也, 鳥越隆平, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

応用物理学会学術講演会講演予稿集(CD-ROM) Vol. 72nd 2011

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マルチホロー放電プラズマCVDによる量子ドット増感太陽電池用シリコンナノ結晶粒子の作製 (特集プラズマプロセスの応用技術)

内田儀一郎, 古閑一憲, 白谷正治

ケミカルエンジニヤリング Vol. 55 ( 12 ) page： 947 - 954 2010.12

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Ar+H2+C7H8プラズマの水素発光強度計測

野村卓矢, 浦川達也, 山下大輔, 松崎秀文, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

応用物理学会九州支部学術講演会講演予稿集 Vol. 36 2010

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プラズマCVDカーボン膜の堆積速度の基板配置位置依存性

浦川達也, 野村卓矢, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 古閑一憲, 白谷正治, 白谷正治, 節原裕一, 節原裕一, 関根誠, 関根誠, 堀勝, 堀勝

応用物理学会九州支部学術講演会講演予稿集 Vol. 36 2010

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ダブルマルチホロー放電を用いた表面窒化シリコン粒子の生成

山本康介, 佐藤宗治, 川嶋勇毅, 中原賢太, 山下大輔, 松崎秀文, 鎌滝晋礼, 板垣奈穂, 内田儀一郎, 古閑一憲, 白谷正治

応用物理学会九州支部学術講演会講演予稿集 Vol. 36 2010

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ダブルマルチホロー放電によるシリコン粒子の表面窒化

内田儀一郎, 佐藤宗治, 川嶋勇毅, 中原賢太, 山本康介, 山下大輔, 松崎秀文, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

応用物理学会学術講演会講演予稿集(CD-ROM) Vol. 71st 2010

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異方性プラズマCVDで堆積したカーボン膜のエッチングレート

山下大輔, 浦川達也, 野村卓矢, 内田儀一郎, 古閑一憲, 古閑一憲, 白谷正治, 白谷正治, 節原裕一, 節原裕一, 関根誠, 関根誠, 堀勝, 堀勝

応用物理学会九州支部学術講演会講演予稿集 Vol. 36 2010

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Evaluation of AC-PDP with SrO protective layer

UCHIDA Giichiro, UCHIDA Satoshi, KAJIYAMA Hiroshi, SHINODA Tsutae

Vol. 2009 ( 31 ) page： 13 - 16 2009.11

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PDP発光効率の誘電体膜厚依存性に関する解析

末貞和真, 淡路則之, 矢野孝伸, 内田儀一郎, 内田諭, 梶山博司, 篠田傳

応用物理学会学術講演会講演予稿集 Vol. 70th ( 1 ) 2009

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SrO陰極プラズマディスプレイ(PDP)の放電特性

内田儀一郎, 内田諭, 淡路則之, 梶山博司, 篠田傳

応用物理学関係連合講演会講演予稿集 Vol. 56th ( 1 ) 2009

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Suppression of plasma degradation of BAM phosphor

Vol. 13 ( 11 ) page： 14 - 18 2007.11

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The high-time resolved measurement of emission spectrum from a small cell in AC-PDP

UCHIDA Giichiro, KAJIYAMA Hiroshi, SHINODA Tsutae

IEICE technical report Vol. 107 ( 166 ) page： 43 - 46 2007.7

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Here is presented experiments on temporal evolution and patial distribution of optical emission spectra from alternating-current plasma display (AC-PDP). Measurement shows that emission intensity, which is induced from Ne and Xe atom, drastically changes in each discharge stage and each spatial region. In initial discharge, intensity o f Ne emission is much stronger than that of Xe emission in cathode and anode region, and I_<Ne:585nm>/I_<Xe:823nm> decreases with an increase in discharge time. There is also considerable effect of discharge voltage, gas pressure, and Xe partial pressure on I_<Ne:585nm>/I_<Xe:823nm>. Time-resolved measurement of optical emission spectra is useful to investigate the electron temperature.

CiNii Research
The emission mechanism of BAM:Eu^<2+> phosphor under VUV excitation

TANNO Hiroaki, ZHANG Shuxiu, UCHIDA Giichiro, SHINODA Tsutae, KAJIYAMA Hiroshi

IEICE technical report Vol. 107 ( 166 ) page： 39 - 42 2007.7

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The photoluminescence (PL) and thermoluminescence (TL) characteristics of BaMgAl_<10>O_<17> (BAM) and SrMgAl_<10>O_<17> (SAM) are studied under vacuum ultraviolet (VUV: λ=146nm) excitation. The host emission from BAM is observed at 300K whereas no signal is obtained from SAM. This result suggested that the host emmision from BAM relates to the defects in BAM lattice. It is estimated that the radiative energy transfer originating from BAM host contributes to about 20% of total Eu^<2+> emitting under 146nm excitation.

CiNii Research
Research on the lifetime improvement of blue phosphor BAM:Eu^<2+>

KAJIYAMA Hiroshi, TANNO Hiroaki, UCHIDA Giichiro, SHINODA Tsutae

IEICE technical report Vol. 107 ( 166 ) page： 35 - 38 2007.7

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The effect of plasma treatment on the luminance efficacy of BaMgAl_<10>O_<17>:Eu^<2+> (BAM:Eu^<2+>) is investigated. Among argon-based plasmas with hydrogen or oxygen, it is confirmed that the hydrogen addition to argon plasma supremely improves the lifetime of BAM:Eu^<2+>. The photoluminescence (PL) and thermoluminescence (TL) measurements reveal that the electron traps closely concerned with degradation are reduced by the hydrogen plasma. The PL measurements on BaMgAl_<10>O_<17> strongly suggest that the vacancies and/or defects in BAM crystal are somehow repaired by hydrogen bridge formation.

CiNii Research
The high-time resolved measurement of emission spectrum from a small cell in AC-PDP

ITE technical report Vol. 31 ( 35 ) page： 43 - 46 2007.7

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CiNii Research
Research on the lifetime improvement of blue phosphor BAM:Eu[2+]

ITE technical report Vol. 31 ( 35 ) page： 35 - 38 2007.7

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CiNii Research
Plasma Measurement in a grid-cage used for dust plasma experiment under microgravity condition

Suzukawa W., Uchida G., Iizuka S., Sato N.

Meeting abstracts of the Physical Society of Japan Vol. 58 ( 2 ) page： 181 - 181 2003.8

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Formation process of particle clouds in a dusty plasma under microgravity condition

Suzukawa W., Shimizu S., Nishimura G., Iizuka S., Uchida G., Sato N.

Meeting abstracts of the Physical Society of Japan Vol. 58 ( 1 ) page： 239 - 239 2003.3

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Structure of fine-particle in plasmas under microgravity condition by parabolic flight

Satoru Iizuka, Wataru Suzukawa, Gouki Nishimura, Shinya Shimizu, Giichiro Uchida, Noriyoshi Sato

The XXVI International Conference on Phenomena in Ionized Gases Vol. 1 page： 255 - 256 2003
Collective behavior of fine-particles in plasmas under microgravity condition

IIZUKA Satoru, SUZUKAWA Wataru, NISHIMURA Gouki, SHIMIZU Shinya, UCHIDA Giichiro, SATO Noriyoshi

Vol. 19 page： 71 - 71 2002.10

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Formation of spherically symmetric fine-particle clouds in plasmas under microgravity condition

SUZUKAWA Wataru, NISHIMURA Gouki, SHIMIZU Shinya, IIZUKA Satoru, UCHIDA Giichiro, SATO Noriyoshi

Vol. 19 page： 23 - 23 2002.10

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CiNii Research
Behavior of particle cloud in dusty plasma under microgravity

Suzukawa W, Shimizu S, Nishimura G, Iizuka S, Uchida G, Sato N

Meeting abstracts of the Physical Society of Japan Vol. 57 ( 2 ) page： 146 - 146 2002.8

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CiNii Research
26pA04 Structure of fine-particle cloud in a plasma under microgravity condition

Iizuka Satoru, Suzukawa Wataru, Nishimura Gouki, Shimizu Shinya, Uchida Giichiro, Sato Noriyoshi

( 19 ) page： 84 - 84 2002

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27aC29P Dynamic Behavior of Strongly-Coupled Fine Particles in a Plasma

Uchida G., Hirose K., Kamimura T., Iizuka S., Sato N.

( 19 ) page： 132 - 132 2002

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CiNii Research
Behaviors of fine particles in plasmas under microgravity condition

S. Iizuka, G. Uchida, S. Shimizu, G. Nishimura, W. Suzukawa, N. Sato

Proc. Of The 23rd International Symposium on Space Technology and Science Vol. 2 page： 1724 - 1729 2002
Diamond particles levitated in a reactive plasma

G. Nishimura, S. Iizuka, G. Uchida, N. Sato

Diamond and Related Materials Vol. 12 page： 374 - 377 2002

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Fine particles in plasmas under micro-gravity condition

IIZUKA Satoru, UCHIDA Giichirou, SATO Noriyoshi

Vol. 18 page： 93 - 93 2001.10

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Rotational Motion of Fine-Particle Cloud Controlled by Plasma Spatial Structure in a Magnetized Plasma.

Uchida Giichiro, Kaneko Toshiro, Shimizu Shinya, Iizuka Satoru, Sato Noriyoshi

Meeting abstracts of the Physical Society of Japan Vol. 56 ( 1 ) page： 176 - 176 2001.3

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CiNii Research
Dependence of Fine-Particle-Cloud Rotation on Fine-Particle Density in a Magnetized Plasma

Shimizu S., Uchida G., Kaneko T., Iizuka S., Sato N.

Meeting abstracts of the Physical Society of Japan Vol. 56 ( 1 ) page： 177 - 177 2001.3

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CiNii Research
27aA06 Potential-Driven Vortices of Strongly-Coupled Fine Particles in a Plasma

Uchida G., Hirose Kei. I., Kamimura T., lizuka S., Sato N.

( 18 ) page： 40 - 40 2001

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27pA26P Simulation study for structures of Coulomb clusters and its behaviors

Hirose Kei.I., Uchida Giichiro, Kamimura Tetsuo, lizuka Satoru, Sato Noriyoshi

( 18 ) page： 53 - 53 2001

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CiNii Research
27pA06P Effect of Neutral Gas Pressure on the Rotation of Fine-Particle Cloud under the Ultra Strong Magnetic Field

SHIMIZU Shinya, KANEKO Toshiro, UCHIDA Giichiro, IIZUKA Satoru, SATO Noriyoshi

( 18 ) page： 43 - 43 2001

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CiNii Research
Computer simulation on fine particle dynamics in a plasma

T. Kamimura, K. Hirose, G. Uchida, S. Iizuka, N. Sato

J. Plasma Fusion Res. SERIES Vol. 4 page： 480 - 482 2001
Control of rotational motion of fine-particle cloud confined in a weakly-magnetized dc discharge plasma

G. Uchida, S. Iizuka, N. Sato

J. Plasma Fusion Res. SERIES Vol. 4 page： 483 - 486 2001
Dynamic Behaviors of Fine-Particle Cloud Controlled in a DC Discharge Plasma

UCHIDA Giichiro, IIZUKA Satoru, SATO Noriyoshi

Vol. 2000 ( 44 ) page： 49 - 54 2000.8

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CiNii Research
27pA14P Control of Fine-Particle-Cloud Rotation in a Magnetized RF-Discharge Plasma

( 17 ) page： 81 - 81 2000

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CiNii Research
Potential-driven fine-particle behaviors in a dc discharge plasma

G. Uchida, S. Iizuka, N. Sato

International Congress on Plasma Physics Vol. 2 page： 416 - 419 2000
Dynamics of fine-particle clouds in plasmas

N. Sato, G. Uchida, T. Kaneko, S. Iizuka

International Topical Conference on Plasma Physics: Colloidal Plasma Science page： 14 2000
Control of fine-particle flow in a plasma by applying external electric field

G. Uchida, S. Iizuka, N. Sato

Proceedings of the 17th Symposium on Plasma Processing page： 617 - 620 2000
30p-XM-11 Structures of Vortex Flow of Strongly-Coupled Fine Particles in a DC Discharge Plasma

Uchida Giichiro, Ozaki Ryoichi, Iizuka Satoru, Sato Noriyoshi

Meeting abstracts of the Physical Society of Japan Vol. 54 ( 1 ) page： 825 - 825 1999.3

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CiNii Research
30p-XM-12 Formation and dynamics of chain-type structures of fine particles in a dc discharge plasma

Ozaki Ryoichi, Uchida Giichiro, Iizuka Satoru, Sato Noriyoshi

Meeting abstracts of the Physical Society of Japan Vol. 54 ( 1 ) page： 826 - 826 1999.3

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CiNii Research
Simulation on Behaviors of Strongly-Coupled Fine Particles

( 16 ) page： 103 - 103 1999

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CiNii Research
Spatial Structures of Vortex Flow of Strongly-Coupled Fine Particles in a DC Discharge Plasma

( 16 ) page： 154 - 154 1999

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CiNii Research
Large Fine-Particle Levitation due to Electron Shower

( 16 ) page： 103 - 103 1999

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CiNii Research
Strongly coupled structures of different size fine particles in a discharge plasma

OZAKI Ryoichi, UCHIDA Giichiro, IIZUKA Satoru, SATO Noriyoshi

Meeting abstracts of the Physical Society of Japan Vol. 53 ( 1 ) page： 811 - 811 1998.3

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CiNii Research
Dust vortex in a dc discharge plasma under a weak magnetic field

G. Uchida, R. Ozaki, S. Iizuka, N. Sato

Proc. Int. Conf. on Plasma Physics Vol. 22C page： 2557 - 2560 1998
Generation and control of vortex flow on fine particle with Coulomb lattice

G. Uchida, R. Ozaki, S. Iizuka, N. Sato

Proc. the 15th Symp. on Plasma Processing page： 152 - 155 1998
28p-YG-8 Fine particle Coulomb lattice formed by applying negative dc potential to a metal plate in a plasma

Uchida Giichiro, Iizuka Satoru, Sato Noriyoshi

Meeting abstracts of the Physical Society of Japan Vol. 52 ( 1 ) page： 836 - 836 1997.3

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To the head of MISC.▲

KAKENHI (Grants-in-Aid for Scientific Research) 16

ナノ粒子混相プラズマ流制御による低温ナノ接合・3Dプリンティングの創製

Grant number：26K22313 2026.6 - 2029.3

日本学術振興会科学研究費助成事業挑戦的研究(萌芽)

内田儀一郎

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Authorship：Principal investigator

Grant amount：\6500000 （ Direct Cost: \5000000 、 Indirect Cost：\1500000 ）
中圧低温プラズマ局所温度・ガス流れ場の学理構築によるナノ構造膜の完全形態制御

Grant number：25K00994 2025.4 - 2028.3

日本学術振興会科学研究費助成事業基盤研究(B)

内田儀一郎, 茂田正哉, 茂田正哉

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Authorship：Principal investigator

Grant amount：\18850000 （ Direct Cost: \14500000 、 Indirect Cost：\4350000 ）

次世代のLiイオン電池の高容量化には、Si材料の負極への利用が必要不可欠であり、なかでも亀裂劣化に耐性のある究極のポーラス膜である1次元ナノワイヤー膜の採用が鍵となる。この課題に対し本研究の目的は、低圧低温プラズマと熱プラズマの両特性を持ち併せた、中圧領域低温プラズマプロセスを開拓し、Siのポーラスナノ構造膜をシングルステップで作製し、さらに１次元から3次元までナノ形態を完全制御することにある。そのために本研究では中圧低温プラズマの局所的反応場の基礎特性と多彩なナノ材料膜形態を相関マップとしてまとめ、Liイオン電池負極に最適なSiナノ負極材料を提案する。
Development of a plasma bonding process by reaction control of plasma-liquid interface

Grant number：21K18619 2021.7 - 2023.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Research (Exploratory) Grant-in-Aid for Challenging Research (Exploratory)

Uchida Giichiro

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Authorship：Principal investigator

Grant amount：\6370000 （ Direct Cost: \4900000 、 Indirect Cost：\1470000 ）

We have developed a plasma thermo-compression bonding method for thermally bonding various resins(PC, PA, PE, PS, PP) and metals(SUS304, steel plate) by irradiating their surfaces with a high-density high-frequency (60 MHz) plasma jet. As a result, higher bonding strength was obtained for all resins compared to conventional thermal bonding. The bonding strength was further enhanced by the plasma solution hybrid process in which a silane coupling solution was applied to the metal surface. Finally, resin/stainless steel bonding was 3 to 12 times stronger than conventional thermal bonding, and resin/steel sheet bonding was 2 to 4 times stronger than conventional thermal bonding. This study demonstrates that the plasma/solution hybrid joining method using the reaction between silane coupling solution and high-frequency plasma jet is effective for resin/metal joining.
Precise structure control of nano-composite films in low-temperature plasma reaction field with fast flow

Grant number：21H01076 2021.4 - 2024.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B) Grant-in-Aid for Scientific Research (B)

Uchida Giichiro

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Authorship：Principal investigator

Grant amount：\17550000 （ Direct Cost: \13500000 、 Indirect Cost：\4050000 ）

The purpose of this study is to control the microstructure of nanomaterial films using a low-temperature plasma flow reaction field. By changing the gas flow rate (velocity) in the plasma, the particle size of Ge nanoparticles could be controlled between 40 and 100 nm. In the plasma reaction field with two flows, nanostructured films with aggregated GeSn nanoparticles were formed at low gas flow velocities, while at high gas flow velocities above 300 sccm, specific nanostructured films with regularly arranged nanopillars of about 100 micron diameter were formed. As an application study, a Li ion battery using a C/Ge/C stacked film as the anode demonstrated 910 mAh/g after 90 cycles, which is a three times higher value than that of a carbon anode.
次世代高容量Liイオン電池実現に向けた新規ナノ複合材料の創製

2020.4 - 2022.3

日本私立学校振興・共済事業団学術研究振興資金

内田儀一郎, 平松美根男, 竹田圭吾, 太田貴之, 土屋文
Control of the reactive species production in liquid by using the plasma-jet turbulence flow and the selective killing of cancer stem cells by plasma activated liquid

Grant number：17K05096 2017.4 - 2020.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C) Grant-in-Aid for Scientific Research (C)

Giichiro Uchida

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Authorship：Principal investigator

Grant amount：\4680000 （ Direct Cost: \3600000 、 Indirect Cost：\1080000 ）

We present evidence for the decomposition and oxidation of amino acids in aqueous solution following irradiation with a nonequilibrium plasma jet. Of 15 amino acids tested in cell culture medium, plasma irradiation induced a marked chemical change in methionine and tryptophan due to the effective production of reactive oxygen species by plasma-water interaction. We also report that plasma-treated methionine and tryptophan aqueous solutions can kill cancer cells, greatly decreasing the viability of human endometrial carcinoma (HEC-1) cancer cells due to the presence of decomposition or oxidation products generated from the amino acid. Plasma-treated methionine and tryptophan aqueous solutions also induced an anti-cancer effect on cancer-initiating cells.
Precise control of nanoparticle deposition using plasma

Grant number：26246036 2014.4 - 2019.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A) Grant-in-Aid for Scientific Research (A)

Shiratani Masaharu

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Authorship：Coinvestigator(s)

To establish plasma nanoparticle printing technology, we have obtained the following results.
(1) The fluctuation of interaction between plasma and nanoparticles has been revealed. Controlling the fluctuation is a key to generate nanoparticle with narrow size dispersion. (2) Nanoparticle transport using gas flow has been discussed. Selective nanoparticle deposition can be realized by using gas flow. (3) Selective deposition of Si nanoparticles and higher order silane molecules has been succeeded. Deposition kinetics of higher-order silane and their influence on the film characteristics have been revealed. (4) Optical trapping of a fine particle in plasmas has been firstly succeeded. Ultra high sensitive measurement of plasma potential has been succeeded by observing the behavior of the trapped particles.
Development of Ge nanoparticle film by using inflight plasma process for Li ion butteries

Grant number：26390097 2014.4 - 2017.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C) Grant-in-Aid for Scientific Research (C)

Uchida Giichiro

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Authorship：Principal investigator

Grant amount：\5070000 （ Direct Cost: \3900000 、 Indirect Cost：\1170000 ）

We have developed a new plasma process for the fabrication of the Ge nanoparticle films, and applied the films to Li ion batteries. In the experiments, we have deposited crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. In the process, Ge nanoparticles were generated in the reactive plasma, and were transported to the downstream substrate by neutral gas flow. The Ge nanoparticles transited from amorphous to crystalline structure by adding H2 gas in the Ar discharge gas. We evaluated performance of Li ion batteries with crystalline Ge nanoparticle film as anode material. The first cycle of charge/discharge property showed that the capacity was around 1600 mAh/g. The discharge capacity remained at about 600 mAh/g after 50th cycle.
Development of deposition technology of surface nano-structure-controlled ZnO thin films using atmospheric pressure non-equilibrium plasma

Grant number：26420738 2014.4 - 2017.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)

Takenaka Kosuke, SETSUHARA Yuichi, UCHIDA Giichiro, SETSUHARA Yuichi, UCHIDA Giichiro

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Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid)

Development of zinc oxide thin film formation technology by atmospheric pressure non-equilibrium plasma assist have been studied. First, the reaction at plasma liquid interface when atmospheric pressure non-equilibrium plasma was applied to liquid have been investigated, suggesting that OH radicals are produced by the decomposition reaction of water by plasma, which may contribute to oxidation. In order to obtain information concerning the control of surface structure of zinc oxide films, the influence of surface structure by mist size supplied to plasma has been investigated. A hemispherical structure has been observed on the ZnO film surfaces. The result inhibit that the hemispherical structure depends on the mist size supplied to the plasma, and the hemispherical structure generated changes from the vaporization rate of the solvent in the plasma.
Development of novel atomic-layer-deposition plasma PVD processes for efficient and high-rate reactive film-formation processes

Grant number：26630335 2014.4 - 2016.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research

Setsuhara Yuichi, UCHIDA Giichiro, TAKENAKA Kosuke, UCHIDA Giichiro, TAKENAKA Kosuke

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Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid)

The research project has been carried out for development of advanced PVD technologies to realize enhancement of target-utilization efficiency and deposition rate via plasma-enhanced sputter-deposition process using inductively coupled high-density plasma sources sustained with low-inductance antenna. The results obtained in the present project have shown that the plasma-enhanced sputter-deposition process can be effective for enhancement of target-utilization efficiency and deposition rate as well as formation of high-quality films.
Creation of kinetics and establishment of safety medical science on plasma nano material

Grant number：24108009 2012.6 - 2017.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Tanaka Akiyo, TSUZUKI Teruhisa, SAKUDO Akikazu, UCHIDA Giichiro, TSUZUKI Teruhisa, SAKUDO Akikazu, UCHIDA Giichiro

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Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid)

We evaluated the health effects of plasma irradiation on the skin of normal hairless mice, Saccharomyces cerevisiae, silkworm, oral cancer cell or plasma-activated medium (PAM) when administered to mice via repeated intraperitoneal injections. In vivo kinetics of nanoparticles synthesized by discharge plasmas in water was analyzed. Clear dose-response relations were not observed by irradiation to Saccharomyces cerevisiae, silkworm, and oral cancer cell. From the histopathological changes in the mice skin after plasma irradiation, slight to mild skin lesions in the epidermis were seen just after irradiation until termination of observation periods and the severity of these lesions worsened with the passage of time. Concerning the health effect of PAM, clear lesions were not manifested in the PAM-treated mice. It would seem that a less toxic effect is manifested when PAM is injected intraperitoneally in mice.
Development of novel plasma sources for plasma medicine through advanced spatio-temporal control of atmospheric-pressure discharge

Grant number：24108003 2012.6 - 2017.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area) Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Setsuhara Yuichi, TAKENAKA Kosuke, UCHIDA Giichiro, ABE Hiroya, TAKENAKA Kosuke, UCHIDA Giichiro, ABE Hiroya

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Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid)

The research project has been carried out for development of novel plasma sources for plasma medicine through advanced spatio-temporal control of atmospheric-pressure discharge. The results obtained in the present project have shown that the novel high-density plasma source has been developed via high-frequency discharge through optimization of source configuration based on systematic studies on spatio-temporal characteristics and frequency dependence of atmospheric-pressure plasmas.
Transportation of dust particles by solitary-wave electric field in plasma

Grant number：24740371 2012.4 - 2014.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B) Grant-in-Aid for Young Scientists (B)

UCHIDA Giichiro

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Authorship：Principal investigator

Grant amount：\4550000 （ Direct Cost: \3500000 、 Indirect Cost：\1050000 ）

We have developed new bottom-up process for the fabrication of nanoparticle composite thin films in dusty plasma. We have obtained three main results. (i) We produced dust particles in reactive discharge plasma. The appearance of dust particles leaded to an increase in number density of Ar metastable atoms, and this is due to the drastic change of plasma parameters such as electron temperature. We also observed the void structure in dust-particle cloud, which is well explained by the effect of ion drag force acting on the dust particles. (ii) We succeeded in the transportation of dust particles by applying the external electric field. The dust particles dynamically moved from the bottom ion-sheath region to the upper substrate which is located more than 1 cm away from the bottom ion-sheath region. (iii) We deposited nanoparticle composite thin films, where crystalline Si nanoparticles of 6-11 nm diameter were produced in plasma, and they were successfully transported to the substrate.
大気圧非平衡プラズマを用いたコア/シェル型シリコンナノ粒子の高速・精密合成法の開発

Grant number：12101910 2012 - 2013

科学技術振興機構産学が連携した研究開発成果の展開/研究成果展開事業/研究成果最適展開支援プログラム(A-STEP)/探索タイプ

内田儀一郎

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本研究では、リチウム(Li)イオン電池の高容量化を実現可能なコア/シェル構造シリコンナノ粒子膜の高速成膜を実現することを目標とした。この目標に対し、高圧ダブルプラズマCVD法を用いて、SiCナノ粒子の高速生成に成功した。また、SiCナノ粒子膜を用いて実際にLiイオン電池を試作した。その結果、従来型のグラファイト負電極Liイオン電池の約10倍の3000 mAh/g以上の初期容量を得た。また、10回の充放電後も3500 mAh/gを維持し、極めて良好なサイクル特性を達成した。
シリコン量子ドットデバイスに向けたナノ粒子精密制御ボトムアッププロセスの開発

Grant number：10101794 2010

科学技術振興機構産学が連携した研究開発成果の展開/研究成果展開事業/研究成果最適展開支援プログラム(A-STEP)/探索タイプ

内田儀一郎

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本研究では、ICや太陽電池材料として最も広く利用されているシリコンのナノ粒子に着目し、その生成から基板への配置まで一貫して行えるナノ構造ボトムアッププロセスを開発することを目標とした。この目的に対し、SiH2/H2ガスを用いたマルチホロー放電プラズマCVD法を用いて、10nm以下の分散を持つシリコンナノ粒子の作製に成功した。また、そのナノ粒子の挙動をガス流により制御し、薄膜中への高密度取込に成功した(ナノ粒子薄膜の堆積に成功)。このナノ粒子薄膜(量子ドット薄膜)のデバイス応用として、増感型太陽電池を試作し、その太陽電池セルからの発電を確認した。
Bond Engineering at Nano-Interfaces using Nanoparticle Plasmas

Grant number：21110005 2009.7 - 2014.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area) Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

SHIRATANI Masaharu, KOGA Kazunori, UCHIDA Giichiro, KAMATAKI Kunihiro, SEO Hyunwoong, ITAGAKI Naho, KOGA Kazunori, UCHIDA Giichiro, KAMATAKI Kunihiro, SEO Hyunwoong, ITAGAKI Naho

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Authorship：Coinvestigator(s)

To reveal fluctuation of interaction between plasmas and nanointerface, we have studied effects of radical density fluctuation on growth of nano-particles in amplitude modulated pulse rf discharges, using a two-dimensional in-situ laser-light scattering method.
We have found that growth of nanoparticles are suppressed by the amplitude modulation. The results of the spectral analysis suggest that growth of nanoparticles is nonlinearly coupled with radicals. Based on the results, we have discussed a growth model of nanoparticles. Using the model, we have found that a diagram of the particle growth modes having three modes and that the model describes suppression of size dispersion of nanoparticles. We have realized the particle trapping in plasmas using an IR laser. Using the trapping, we have succeeded an in-situ measurement of the interaction between a trapped particle and radicals.

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To the head of KAKENHI (Grants-in-Aid for Scientific Research).▲

Industrial property rights 11

シリコンナノワイヤーの製造方法、シリコンナノワイヤー群、電池用電極

内田儀一郎, 益本幸泰

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Application no：特願2022-95806 Date applied：2022.6
リチウムイオン二次電池用負極材及びその製造方法、並びにリチウムイオン二次電池

布村正太, 内田儀一郎

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Application no：特願2022-67089 Date applied：2022.4
樹脂材と金属材との接合体およびその製造方法

内田儀一郎, 節原裕一, 竹中弘祐

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Application no：特願2018-96385 Date applied：2018.5
プラズマ発生装置及びこれを用いたプラズマ生成方法

Giichiro Uchida

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Application no：特願2017-68320 Date applied：2017.3
多重量子井戸型太陽電池および多重量子井戸型太陽電池の製造方法

Giichiro Uchida

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Application no：特許第5366279号 Date applied：2013.3
太陽電池

Giichiro Uchida

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Application no：特願2012-49805 Date applied：2012.3
ZnO膜の製造方法、透明導電膜の製造方法、ZnO膜、及び透明導電膜

Giichiro Uchida

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Application no：国際出願PCT/JP2011/069348 Date applied：2011.8
プラズマディスプレイパネル

Giichiro Uchida

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Application no：特願2008-083943 Date applied：2008.3
プラズマディスプレイパネル用保護膜及びプラズマディスプレイパネル

Giichiro Uchida

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Application no：特願2007-312257 Date applied：2007.12
プラズマディスプレイパネル用酸化マグネシウム蒸着材及び保護膜

Giichiro Uchida

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Application no：特願2007-312571 Date applied：2007.12
プラズマ中微粒子除去方法及びその装置

Giichiro Uchida

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Application no：特願2001-506594 Date applied：1999.6

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To the head of Industrial property rights.▲

Teaching Experience (Off-campus) 16

ナノプロセス工学特論

（Kyushu University）
電磁理論

（Nagoya University）
電磁気学Ⅰ

（Kyushu University）
電磁材料プロセス学

（Osaka University）
電気電子工学実験Ⅱ

（Meijo University）
電気電子工学実験Ⅰ

（Meijo University）
電気電子工学基礎実験

（Meijo University）
電気回路Ⅲ

（Meijo University）
電気回路Ⅱおよび演習

（Meijo University）
Electrochemistry

（Meijo University）
電子計測

（Meijo University）
電子デバイス特論

（Meijo University）
プロセスプラズマ工学特論

（Nagoya University）
プラズマ工学

（Kyushu University）
プラズマ工学

（Nagoya University）
プラズマプロセス（集中講義）

（Kyushu University）

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To the head of Teaching Experience (Off-campus).▲