Updated on 2024/03/29

写真a

 
UCHIYAMA Haruki
 
Organization
Graduate School of Engineering Electronics 1 Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Assistant Professor

Degree 1

  1. 博士（工学） （ 2021.3   名古屋大学 ） 

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Papers 7

  1. Electrochemical reservoir computing based on surface-functionalized carbon nanotubes Reviewed

    Shingu, T; Uchiyama, H; Watanabe, T; Ohno, Y

    CARBON   Vol. 214   2023.10

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    Language：English   Publisher：Carbon  

    Reservoir computing, a type of neural network computing, is an energy-efficient and fast machine learning method, expected to realize low-power edge processing in sensor devices. This study constructs an electrochemical reservoir using carbon nanotube (CNT) thin-film electrodes on flexible plastic and proves the capability of the electrochemical functionalization of CNT thin films to improve the reservoir's performance. The performance of the time-series data prediction task, called the nonlinear autoregressive moving average (NARMA) task, can be improved using multiple CNT electrodes functionalized under different conditions. Based on the correlation coefficient analysis of the reservoir output, we illustrate that the reservoir dimensionality is enhanced by combining CNT electrodes with different functionalization conditions. Furthermore, the dimensionality and memory capacity of the reservoir can be improved using the displacement current of the electric double layer and the redox current in the electrochemical electrode. We demonstrate the time-series data prediction of blood glucose levels in patients with type 1 diabetes using a physical reservoir for the first time. The use of functionalized CNTs enables flexible and high-performance reservoir computing, leading to the low-power in-sensor edge processing of wearable sensors.

    DOI： 10.1016/j.carbon.2023.118344

    Web of Science

    Scopus

  2. p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors Reviewed International coauthorship

    Kato, R; Uchiyama, H; Nishimura, T; Ueno, K; Taniguchi, T; Watanabe, K; Chen, ED; Nagashio, K

    ACS APPLIED MATERIALS & INTERFACES   Vol. 15 ( 22 ) page： 26977 - 26984   2023.5

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    Language：English   Publisher：ACS Applied Materials and Interfaces  

    For the complementary operation of two-dimensional (2D) material-based field-effect transistors (FETs), high-performance p-type FETs are essential. In this study, we applied surface charge-transfer doping from WOx, which has a large work function of ∼6.5 eV, selectively to the access region of WS2 and WSe2 by covering the channel region with h-BN. By reducing the Schottky barrier width at the contact and injecting holes into the valence band, the p-type conversion of intrinsically n-type trilayer WSe2 FET was successfully achieved. However, trilayer WS2 did not show clear p-type conversion because its valence band maximum is 0.66 eV lower than that of trilayer WSe2. Although inorganic WOx boasts high air stability and fabrication process compatibility due to its high thermal budget, the trap sites in WOx cause large hysteresis during back gate operation of WSe2 FETs. However, by using top gate (TG) operation with an h-BN protection layer as a TG insulator, a high-performance p-type WSe2 FET with negligible hysteresis was achieved.

    DOI： 10.1021/acsami.3c04052

    Web of Science

    Scopus

    PubMed

  3. A Monolayer MoS<sub>2</sub> FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er<sub>2</sub>O<sub>3</sub> Insulator Through Thermal Evaporation Reviewed International coauthorship

    Uchiyama, H; Maruyama, K; Chen, ED; Nishimura, T; Nagashio, K

    SMALL   Vol. 19 ( 15 ) page： e2207394   2023.1

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    Language：English   Publisher：Small  

    Achieving the direct growth of an ultrathin gate insulator with high uniformity and high quality on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the chemically inert surface of TMDCs. Although the main solution for this challenge is utilizing buffer layers before oxide is deposited on the atomic layer, this method drastically degrades the total capacitance of the gate stack. In this work, we constructed a novel direct high-κ Er2O3 deposition system based on thermal evaporation in a differential-pressure-type chamber. A uniform Er2O3 layer with an equivalent oxide thickness of 1.1 nm was achieved as the gate insulator for top-gated MoS2 field-effect transistors (FETs). The top gate Er2O3 insulator without the buffer layer on MoS2 exhibited a high dielectric constant that reached 18.0, which is comparable to that of bulk Er2O3 and is the highest among thin insulators (< 10 nm) on TMDCs to date. Furthermore, the Er2O3/MoS2 interface (Dit ≈ 6 × 1011 cm−2 eV−1) is confirmed to be clean and is comparable with that of the h-BN/MoS2 heterostructure. These results prove that high-quality dielectric properties with retained interface quality can be achieved by this novel deposition technique, facilitating the future development of 2D electronics.

    DOI： 10.1002/smll.202207394

    Web of Science

    Scopus

    PubMed

  4. Temperature dependence of Raman shift in defective single-walled carbon nanotubes Reviewed

    Endo, M; Uchiyama, H; Ohno, Y; Hirotani, J

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Applied Physics Express  

    Raman scatterings of both pristine and defective single-walled carbon nanotubes were measured. Defects on carbon nanotubes (CNTs) were induced by UV/O3 treatment, and the correlation between the temperature dependence of the Raman shift of the G-band and the crystallinity of CNTs was investigated. In the temperature range of 250-600 K, a gradual negative change in the slope was observed; the linear shift of the Raman G-band frequency with respect to temperature increased as the crystallinity deteriorated. This phenomenon is attributed to the increase in the fourth-order phonon-phonon scattering interaction resulting from the induced defects.

    DOI： 10.35848/1882-0786/ac4678

    Web of Science

    Scopus

  5. Simple and highly efficient intermittent operation circuit for triboelectric nanogenerator toward wearable electronic applications Reviewed

    Kawaguchi, A; Uchiyama, H; Matsunaga, M; Ohno, Y

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Applied Physics Express  

    Triboelectric nanogenerator (TENG) is a promising power source toward the realization of self-powered wearable electronics. However, because of its pulsed output, a power management circuit, such as an intermittent operation circuit and AC-DC converter, is required to drive electronic devices. In this study, we propose a simple and highly efficient intermittent operation circuit composed of a programmable unijunction transistor. The energy transfer efficiency from the storage capacitor to the load reached 89%. We demonstrated that the intermittent circuit can be used to drive electronic devices such as stopwatches and wristwatches using the electricity generated by a carbon-nanotube-based stretchable TENG. &copy; 2021 The Japan Society of Applied Physics.

    DOI： 10.35848/1882-0786/abf405

    Web of Science

    Scopus

  6. Effect of metal electrodes on optically detected magnetic resonance of nitrogen vacancy centers in diamond Reviewed

    Uchiyama, H; Kishimoto, S; Ishi-Hayase, J; Ohno, Y

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 12 )   2020.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    Web of Science

  7. Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers Reviewed

    Uchiyama Haruki, Saijo Soya, Kishimoto Shigeru, Ishi-Hayase Junko, Ohno Yutaka

    ACS OMEGA   Vol. 4 ( 4 ) page： 7459 - 7466   2019.4

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：ACS Omega  

    Operando analysis of electron devices provides key information regarding their performance enhancement, reliability, thermal management, etc. For versatile operando analysis of devices, the nitrogen-vacancy (NV) centers in diamonds are potentially useful media owing to their excellent sensitivity to multiple physical parameters. However, in single crystal diamond substrates often used for sensing applications, placing NV centers in contiguity with the active channel is difficult. This study proposes an operando analysis method using a nanodiamond thin film that can be directly formed onto various electron devices by a simple solution-based process. The results of noise analysis of luminescence of the NV centers in nanodiamonds show that the signal-to-noise ratio in optically detected magnetic resonance can be drastically improved by excluding the large 1/f noise of nanodiamonds. Consequently, the magnetic field and increase in temperature caused by the device current could be simultaneously measured in a lithographically fabricated metal microwire as a test device. Moreover, the spatial mapping measurement is demonstrated and shows a similar profile with the numerical calculation.

    DOI： 10.1021/acsomega.9b00344

    Web of Science

    Scopus

    PubMed

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Presentations 27

  1. フレキシブルカーボンナノチューブ薄膜トランジスタの低周波雑音の評価

    黒宮 英斗、内山 晴貴、松永 正広、片浦 弘道、大野 雄高

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date： 2024.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  2. Variability Tolerance Property of Carbon Nanotube-based Analog CMOS Circuits with 2T1C Load Configuration

    Zhongrui Wang, Haruki Uchiyama, Yutaka Ohno

    2024.3.24 

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    Event date： 2024.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  3. 柔軟なカーボンナノチューブCMOS集積回路を用いた人体通信用送信機の試作と実証

    武藤 大、内山 晴貴、片浦 弘道、大野 雄高

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date： 2024.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  4. Transmitter for human body communication based on flexible carbon nanotube CMOS integrated circuit International conference

    Dai Muto, Haruki Uchiyama, Hiromichi Kataura, Yutaka Ohno

    The 66th Fullerenes-Nanotubes-Graphene General Symposium  2024.3.6 

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    Event date： 2024.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  5. Peptide modification on carbon nanotube thin-film transistors International conference

    Asahi Nagamine, Haruki Uchiyama, Takumi Nakano, Hiromichi Kataura, Chishu Honma, Yuhei Hayamizu, Yutaka Ohno

    The 66th Fullerenes-Nanotubes-Graphene General Symposium  2024.3.7 

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    Event date： 2024.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  6. Low-frequency noise of flexible carbon nanotube thin-film transistors International conference

    Eito Kuromiya, Haruki Uchiyama, Masahiro Matsunaga, Hiromichi Kataura, Yutaka Ohono

    The 66th Fullerenes-Nanotubes-Graphene General Symposium  2024.3.6 

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    Event date： 2024.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  7. Fabrication of flexible carbon nanotube thin-film transistors with asymmetric-gate structure by self-align process International conference

    Shuta Hori, Haruki Uchiyama, Hiromichi Kataura, Yutaka Ohno

    36th International Microprocesses and Nanotechnology Conference  2023.11.16 

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    Event date： 2023.11

    Language：English   Presentation type：Poster presentation  

    Venue：Sapporo   Country：Japan  

  8. Suppression of Variability in Carbon Nanotube Thin-film Transistor-based CMOS Operational Amplifiers International conference

    Zhongrui Wang, Haruki Uchiyama, Yutaka Ohno

    13th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2023.10.30 

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    Event date： 2023.10 - 2023.11

    Language：English   Presentation type：Poster presentation  

    Venue：Seoul   Country：Korea, Republic of  

  9. Performance Enhancement of Carbon Nanotube-Based Transparent and Soft Triboelectric Nanogenerator with Fluoropolymer-PDMS Mixture Dielectric Layer International conference

    M. Matsunaga, H. Uchiyama, Y. Ohno

    The 23rd Int. Conf. on the Science and Applications of Nanotubes and Low-Dimensional Materials  2023.6.6 

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    Event date： 2023.6

    Language：English   Presentation type：Poster presentation  

    Venue：Arcachon   Country：France  

  10. Carrier doping effect of functionalized sumanenes on carbon nanotube International conference

    H. Uchiyama, T. Nakano, M. Matsunaga, Y. Yakiyama, H. Sakurai, Y. Gao, M. Maruyama, S. Okada, H. Kataura, Y. Ohno

    The 23rd Int. Conf. on the Science and Applications of Nanotubes and Low-Dimensional Materials  2023.6.5 

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    Event date： 2023.6

    Language：English   Presentation type：Poster presentation  

    Venue：Arcachon   Country：France  

  11. Study on Variability of Carbon Nanotube Thin-film Transistor-based CMOS Differential Amplifiers

    Zhongrui Wang，Haruki Uchiyama，Yutaka Ohno

    2023.3.16 

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    Event date： 2023.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  12. 自己整合プロセスによる非対称ゲート構造カーボンナノチューブ薄膜トランジスタの作製

    堀 秀汰，内山 晴貴，片浦 弘道，大野 雄高

    第70回応用物理学会春季学術講演会  2023.3.16 

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    Event date： 2023.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  13. カーボンナノチューブ電極を用いた電気化学リザバー：表面修飾による高次元化

    新宮 太郎，渡邉 丈士，内山 晴貴，大野 雄高

    第70回応用物理学会春季学術講演会  2023.3.16 

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    Event date： 2023.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  14. 各種フルオロスマネンによるカーボンナノチューブへのキャリアドープ効果の評価

    中野 拓海，内山 晴貴，燒山 佑美，櫻井 英博，高 燕林，丸山 実那，岡田 晋，片浦 弘道，大野 雄高

    第70回応用物理学会春季学術講演会  2023.3.16 

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    Event date： 2023.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  15. Carrier doping effect of fluoro-sumanenes on carbon nanotube International conference

    Takumi Nakano, Haruki Uchiyama, Yumi Yakiyama, Hidehiro Sakurai, Yanlin Gao, Mina Maruyama, Susumu Okada, Hiromichi Kataura, Yutaka Ohno

    The 64rd Fullerenes-Nanotubes-Graphene General Symposium  2023.3.3 

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    Event date： 2023.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  16. Fabrication of asymmetric-gate carbon nanotube thin-film transistors by backside exposure and oblique deposition method International conference

    Shuta Hori, Haruki Uchiyama, Hiromichi Kataura, Yutaka Ohno

    The 64rd Fullerenes-Nanotubes-Graphene General Symposium  2023.3.1 

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    Event date： 2023.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  17. Simulation and Analysis on Variability of Carbon Nanotube Thin-film Transistor-based CMOS Differential Amplifiers International conference

    Zhongrui Wang, Haruki Uchiyama, Yutaka Ohno

    The 64rd Fullerenes-Nanotubes-Graphene General Symposium  2023.3.2 

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    Event date： 2023.3

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya   Country：Japan  

  18. スピン量子ビットの電気制御に向けたダイヤモンド窒素空孔中心-カーボンナノチューブハイブリッド構造の創製

    内山晴貴, 岸本茂, 早瀬潤子, 大野雄高

    第16回物性科学領域横断研究会  2022.11.25 

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    Event date： 2022.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：オンライン   Country：Japan  

  19. Fabrication of ultra-thin, carbon nanotube-based flexible devices with sacrificial layer of graphene oxide International conference

    N. Yokota, H. Uchiyama and Y. Ohno

    35th International Microprocesses and Nanotechnology Conference  2022.11.10 

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    Event date： 2022.11

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Tokushima   Country：Japan  

  20. Reservoir computing in carbon nanotube thin-film transistors International conference

    T. Watanabe, H. Uchiyama and Y. Ohno

    12th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2022.11.8 

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    Event date： 2022.11

    Language：English   Presentation type：Poster presentation  

    Venue：Tokyo   Country：Japan  

  21. 酸化グラフェンを犠牲層に用いた極薄フレキシブルデバイスの作製

    横田奈菜花，内山晴貴，大野雄高

    第83回応用物理学会秋季学術講演会  2022.9.22 

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    Event date： 2022.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：仙台   Country：Japan  

  22. 多端子カーボンナノチューブ薄膜トランジスタを用いた物理リザバーコンピューティング

    渡邉丈士，内山晴貴，大野雄高

    第83回応用物理学会秋季学術講演会  2022.9.23 

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    Event date： 2022.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：仙台   Country：Japan  

  23. Fabrication and characterization of carbon nanotube flexible devices with sacrificial layer of graphene oxide International conference

    N. Yokota, H. Uchiyama and Y. Ohno

    The 63rd Fullerenes-Nanotubes-Graphene General Symposium  2022.9.1 

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    Event date： 2022.8 - 2022.9

    Language：English   Presentation type：Poster presentation  

    Venue：Tokyo   Country：Japan  

  24. Physical reservoir computing using multi-terminal carbon nanotube thin film transistors International conference

    T. Watanabe, H. Uchiyama and Y. Ohno

    The 63rd Fullerenes-Nanotubes-Graphene General Symposium  2022.9.2 

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    Event date： 2022.8 - 2022.9

    Language：English   Presentation type：Poster presentation  

    Venue：Tokyo   Country：Japan  

  25. Electrochemical reservoir computing based on functionalized carbon nanotubes for machine learning International conference

    T. Shingu, T. Watanabe, H. Uchiyama, Y. Ohno

    ATI 2023 1st Nanocarbon Workshop  2023.7.4 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Atami   Country：Japan  

  26. Flexible resistive random-access memories based on carbon nanotubes and their application for reservoir computing International conference

    A. S. Aji, T. Watanabe, T. Shingu, H. Uchiyama, Y. Ohno

    243rd ESC Meeting  2023.5.31 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Boston   Country：United States  

  27. Electrochemical reservoir based on functionalized carbon nanotube electrodes for machine learning International conference

    T. Shingu, T. Watanabe, H. Uchiyama, and Y. Ohno

    21st Int. Symp. on Intercalation Compounds  2023.6.14 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nancy   Country：France  

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Teaching Experience (On-campus) 1

  1. 電気電子情報工学実験第２

    2022

To the head of Teaching Experience (On-campus).▲