Updated on 2024/04/22

写真a

 
HATTORI Kei
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Designated professor
Title
Designated professor

Degree 1

  1. Doctor of Engineering ( 2011.9   Nagoya University ) 

Education 3

  1. Nagoya University

    2008.10 - 2011.9

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    Country: Japan

  2. Osaka University

    1985.4 - 1987.3

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    Country: Japan

  3. Osaka City University

    1980.4 - 1985.3

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    Country: Japan

Professional Memberships 1

  1. The Japan Society of Applied Physics

    1993.5

Committee Memberships 1

  1. ドライプロセス国際シンポジウム組織委員会   プログラム委員  

    2019.1   

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    Committee type:Academic society

 

Papers 10

  1. Particle an pattern discriminant freeze-cleaning method. Reviewed

    Kei Hattori, Daisuke Matsushima, Kensuke Demura, Masaya Kamiya

    Journal of Micro/Nanolithography, MEMS, and MOEMS   Vol. 19 ( 4 ) page: 044401-1 - 044401-17   2020.9

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/1.JMM.19.4.044401

    DOI: 10.1117/1.JMM.19.4.044401

  2. high-Performance Decomposition and Fixiation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism Reviewed

    Kei Hattori, Masaaki Osato, Takeshi Maeda, Katsuya Okumura, Makoto Sekine, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 50   page: 117301-1 - 117301-8   2011.10

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.50.117301

    DOI: 10.1143/JJAP.50.117301

  3. Freeze point monitoring system for freeze cleaning method International journal

    M. Kamiya, K. Demura, M. Nakamura, K. Hattori

    Proceedings of SPIE   Vol. 12325   page: 123250B-1 - 123250B-8   2022.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:SPIE  

    We propose freeze cleaning as a method of photomask cleaning in which particles small enough to be embedded in the region less than 100 nm from the substrate surface, where there is virtually no fluid flow, are selectively removed without causing pattern collapse. In freeze cleaning, a high particle removal efficiency is achieved by repeating the sequence of liquid (deionized water) being poured onto the substrate, freezing, and thawing (rinsing) multiple times. Based on the mechanism of particle removal, the timings at which the water freezes, ice growth, and freezing of the entire surface are important parameters that govern freeze cleaning performance. In contrast, when these timings were monitored during repeated processing, a maximum variation of about 16% was observed. The most significant cause of these fluctuations is attributed to the process performed in a system that is open to the atmosphere at room temperature, despite the use of
    cryogenic N2 at -120°C. Even with these timing fluctuations, by developing and applying an algorithm that monitors individual changes and automatically determines step switching using this monitor information, it is possible to construct a stable and highly efficient processing system without any tool modification.

    DOI: 10.1117/12.2640652

  4. High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System Reviewed

    K. Sasahira, S. Nakamura, K. Hamada, S. Jimbo, and K. Hattori

    ECS Transactions   Vol. 108 ( 4 ) page: 185 - 195   2022.5

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)  

    Other Link: https://iopscience.iop.org/issue/1938-5862/108/4

  5. Unique freeze cleaning technology

    D. Matsuhima, K. Demura, S. Jimbo, K. Hattori

    Proceedings of SPIE   Vol. 11326   page: 11326-1 - 11326-9   2020.2

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  6. SiC dry etch technology employing Chemical Dry Etch

    D. Watanabe, M. Suzuki, K. Hattori

    Proceedings of international symposium on dry process 2019     page: 151 - 152   2019.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)  

  7. Dry etching technologies for Cr film

    K. Hattori, T. Miyamoto, Y. Iino, S. Kodama, Y. Okamoto, K. Nakazawa, M. Karyu, H. Terakado, H. Shirahama, H. Ita, T. Yoshimori, H. Azumano, M. Muto, M. Iwami

    Proceedings of SPIE   Vol. 10807   page: 10807-1 - 10807-6   2018.4

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  8. Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma. Reviewed

    J. Tonotani, T. Iwamoto, F. Sato, K Hattori, S. Ohmi, H. Iwai

    Journal of Vacuum Science and Technology   Vol. B21   page: 2163 - 2168   2003

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    Language:English   Publishing type:Research paper (scientific journal)  

  9. Residue-Free Etching of Al-Si-Cu Alloy Employing Magnetron Reactive Ion Etching Reviewed

    Kei Hattori, Masaru Hori, Michishige Aoyama

    Journal of the Electrochemical Society   Vol. 141 ( 10 ) page: 2825 - 2828   1994.10

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  10. Wavelength-Dependent Decay Times and Time-Dependent Spectra of the Singlet-Exciton Luminescence in Anthracene Crystals. Reviewed

    H. Nishimura, T. Yamaoka, K. Hattori, A. Matsui, K. Mizuno

    Journal of Physical Society Japan   Vol. 54   page: 4370 - 4381   1985

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    Language:English   Publishing type:Research paper (scientific journal)  

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Presentations 9

  1. 半導体デバイス製造における、生産技術~前工程担当者の視点から、異分野協業(パートナーシップ構築)の重要性とその実際~ Invited

    服部 圭

    グリーンDXプラズマコンソーシアム2024年度第1回講習会  2024.4.19  名古屋大学低温プラズマ科学研究センター

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    Event date: 2024.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学・EI創発工学館FUJIホール   Country:Japan  

  2. High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System International conference

    K. Sasahira, S. Nakamura, K. Hamada, S. Jimbo, and K. Hattori

    241st ECS Meeting  2022.5.31  The Electrochemical Society

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    Event date: 2022.5 - 2022.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Vancouver, BC, Canada, and Online   Country:Canada  

  3. Freeze point monitoring system for freeze cleaning method International conference

    K.Demura, M. Kamiya, M. Nakamura , and K. Hattori

    Photomask Japan 2022  2022.4.27  Photomask Japan and SPIE

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    Event date: 2022.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  4. Effects of dopant to DIW in freeze cleaning method

    Minami Nakamura, Kensuke Demura, Satoshi Nakamura , Masaya Kamiya, Kei Hattori

    2021.3.16 

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    Event date: 2021.3 - 3021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. Unique freeze cleaning technology International conference

    D. Matsushima, K. Demura, S. Jimbo, K. Hattori

    SPIE Advanced Lithography  2020.2.25  SPIE

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    Event date: 2020.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose , California   Country:United States  

  6. SiC dry etch technology employing Chemical Dry Etch. International conference

    D. Watanabe, M. Suzuki, K. Hattori

    International Symposium on Dry Process 2019  2019.11.22  International Symposium on Dry Process Organizing Committee

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:JMS Aster Plaza, Hiroshima   Country:Japan  

  7. Dry etching technologies for Cr film International conference

    T. Miyamoto, Y. Iino, S. Kodama, Y. Okamoto, K. Nakazawa, M. Karyu, H. Terakado, H. Shirahama, H. Ita, T. Yoshimori, H. Azumano, M. Muto, M. Iwami, K. Hattori

    Photomask Japan 2018  2018.4.18  Photomask Japan and SPIE

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    Event date: 2018.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama, Yokohama, Japan   Country:Japan  

  8. Expectations and prospects for new materials: From semiconductor device manufacturing viewpoint. Invited International conference

    Kei Hattori

    Semicon Japan 2016, CGMC Forum  2016.12.14  Semi Japan

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    Event date: 2016.12

    Language:English   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:Tokyo Big Sight   Country:Japan  

  9. Residue Free Etching of Al-Si-Cu Alloys Employing Magnetron RIE. International conference

    K. Hattori, M. Hori, M. Aoyama

    183rd. Meeting of Electrochemical Society  1993.5.20  The electrochemical Society

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    Event date: 1993.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hilton Hawaiian Village, Honolulu, Hawaii, USA   Country:United States  

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