Updated on 2024/12/02

写真a

 
HATTORI Kei
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Designated professor
Title
Designated professor

Degree 1

  1. Doctor of Engineering ( 2011.9   Nagoya University ) 

Education 3

  1. Nagoya University

    2008.10 - 2011.9

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    Country: Japan

  2. Osaka University

    1985.4 - 1987.3

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    Country: Japan

  3. Osaka City University

    1980.4 - 1985.3

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    Country: Japan

Professional Memberships 1

  1. The Japan Society of Applied Physics

    1993.5

Committee Memberships 1

  1. ドライプロセス国際シンポジウム組織委員会   プログラム委員  

    2019.1   

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    Committee type:Academic society

 

Papers 11

  1. Particle an pattern discriminant freeze-cleaning method. Reviewed

    Kei Hattori, Daisuke Matsushima, Kensuke Demura, Masaya Kamiya

    Journal of Micro/Nanolithography, MEMS, and MOEMS   Vol. 19 ( 4 ) page: 044401-1 - 044401-17   2020.9

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/1.JMM.19.4.044401

    DOI: 10.1117/1.JMM.19.4.044401

  2. high-Performance Decomposition and Fixiation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism Reviewed

    Kei Hattori, Masaaki Osato, Takeshi Maeda, Katsuya Okumura, Makoto Sekine, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 50   page: 117301-1 - 117301-8   2011.10

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.50.117301

    DOI: 10.1143/JJAP.50.117301

  3. Rapid freeze-cleaning method International journal

    Satoshi Nakamura, Masaya Kamiya, Kensuke Demura, Masashi Yamage, Kei Hattori

    Proceedings of SPIE   Vol. 13216   page: 132160T-1 - 132160T-13   2024.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:SPIE  

    Freeze cleaning involves the selective separation of particles from the substrate surface by utilizing the volume expansion that occurs when water in a supercooling state changes to ice. This allows particles to be efficiently and easily removed without causing pattern collapse. However, this method has a long processing time because of the following two factors: (i) the particles tend to remain at the four corners of a rectangular substrate; (ii) particle removal efficiency (PRE) per freeze-thaw cycle is low. These factors necessitated 30 repetitions of the freeze-thaw cycle to obtain sufficient removability
    over the entire substrate surface, which prolonged the processing time. Therefore, we attempted to improve the
    removability at the four corners of the substrate and PRE per freeze-thaw cycle. The experimental results showed that removability at the four corners of the substrate was enhanced by improving the discharge efficiency of particles separated from the substrate. Furthermore, the PRE per freeze-thaw cycle was improved by achieving a uniform temperature distribution across the substrate at the end of supercooling. These measures reduced the processing time to 1/6 and allowed
    us to successfully develop a device for mass production.

    DOI: 10.1117/12.3034592

  4. Freeze point monitoring system for freeze cleaning method International journal

    M. Kamiya, K. Demura, M. Nakamura, K. Hattori

    Proceedings of SPIE   Vol. 12325   page: 123250B-1 - 123250B-8   2022.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:SPIE  

    We propose freeze cleaning as a method of photomask cleaning in which particles small enough to be embedded in the region less than 100 nm from the substrate surface, where there is virtually no fluid flow, are selectively removed without causing pattern collapse. In freeze cleaning, a high particle removal efficiency is achieved by repeating the sequence of liquid (deionized water) being poured onto the substrate, freezing, and thawing (rinsing) multiple times. Based on the mechanism of particle removal, the timings at which the water freezes, ice growth, and freezing of the entire surface are important parameters that govern freeze cleaning performance. In contrast, when these timings were monitored during repeated processing, a maximum variation of about 16% was observed. The most significant cause of these fluctuations is attributed to the process performed in a system that is open to the atmosphere at room temperature, despite the use of
    cryogenic N2 at -120°C. Even with these timing fluctuations, by developing and applying an algorithm that monitors individual changes and automatically determines step switching using this monitor information, it is possible to construct a stable and highly efficient processing system without any tool modification.

    DOI: 10.1117/12.2640652

  5. High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System Reviewed

    K. Sasahira, S. Nakamura, K. Hamada, S. Jimbo, and K. Hattori

    ECS Transactions   Vol. 108 ( 4 ) page: 185 - 195   2022.5

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)  

    Other Link: https://iopscience.iop.org/issue/1938-5862/108/4

  6. Unique freeze cleaning technology

    D. Matsuhima, K. Demura, S. Jimbo, K. Hattori

    Proceedings of SPIE   Vol. 11326   page: 11326-1 - 11326-9   2020.2

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  7. SiC dry etch technology employing Chemical Dry Etch

    D. Watanabe, M. Suzuki, K. Hattori

    Proceedings of international symposium on dry process 2019     page: 151 - 152   2019.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (international conference proceedings)  

  8. Dry etching technologies for Cr film

    K. Hattori, T. Miyamoto, Y. Iino, S. Kodama, Y. Okamoto, K. Nakazawa, M. Karyu, H. Terakado, H. Shirahama, H. Ita, T. Yoshimori, H. Azumano, M. Muto, M. Iwami

    Proceedings of SPIE   Vol. 10807   page: 10807-1 - 10807-6   2018.4

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  9. Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma. Reviewed

    J. Tonotani, T. Iwamoto, F. Sato, K Hattori, S. Ohmi, H. Iwai

    Journal of Vacuum Science and Technology   Vol. B21   page: 2163 - 2168   2003

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    Language:English   Publishing type:Research paper (scientific journal)  

  10. Residue-Free Etching of Al-Si-Cu Alloy Employing Magnetron Reactive Ion Etching Reviewed

    Kei Hattori, Masaru Hori, Michishige Aoyama

    Journal of the Electrochemical Society   Vol. 141 ( 10 ) page: 2825 - 2828   1994.10

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  11. Wavelength-Dependent Decay Times and Time-Dependent Spectra of the Singlet-Exciton Luminescence in Anthracene Crystals. Reviewed

    H. Nishimura, T. Yamaoka, K. Hattori, A. Matsui, K. Mizuno

    Journal of Physical Society Japan   Vol. 54   page: 4370 - 4381   1985

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    Language:English   Publishing type:Research paper (scientific journal)  

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Presentations 11

  1. Rapid freeze-cleaning method International conference

    S. Nakamura, K. Demura, M. Yamage, M. Kamiya, K. Hattori

    SPIE Photomask Technology + EUV Lithography  2024.10.1  SPIE

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    Event date: 2024.9 - 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Monterey, California, USA   Country:United States  

    With the down-scaling in semiconductor device, the size of minimum particle required to be removed from EUV masks have become smaller and smaller. Accordingly, critical dimensions of patterns and surface of films have being easily affected by chemicals during being cleaned and from the viewpoint of reducing environmental impacts, decreasing an amount of used chemicals has become one of the most significant challenges at production sites. Spray and mega sonic cleaning are known as conventional cleaning method; however, it usually cannot simultaneously satisfy small particle removals and not collapsing small patterns due to their trade-off relationship. Therefore, we have developed the cleaning technology called "the Freeze Cleaning method"[1],[2] that can discriminate between particles and patterns perfectly and only particles can be removed selectively. In the Freeze Cleaning method developed by Shibaura, the water intruded into gaps between particles and substrate surface is frozen to expand its volume and volume expansion leads to weakening strength of sticking between them. As a result, particles are selectively separated from substrate surface, and they can be efficiency and easily removed from substrate surface. And this innovative cleaning technology is capable of removing small particles only without giving any physical shocks to patterns. Moreover, we optimized the cooling method for a quartz plate with low thermal conductivity in order to obtain high uniformity of temperature across a whole plate, which can shorten a cooling time. And we established the special method that particles are prevented from sticking to substrate surface again, which can drastically enhance removal efficiency of particles per a freeze cycle. Through these our unique measures, we can reduce cleaning time significantly

  2. 凍結洗浄における基板面内温度均一化の効果

    中村 聡、出村 健介、山華 雅司、服部 圭

    第85回応用物理学会秋季学術講演会  2024.9.16  日本応用物理学会

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市朱鷺メッセ   Country:Japan  

    半導体デバイスの露光原版であるフォトマスクの配線パターンに欠陥があると、露光されたすべてのウェハにその欠陥が転写される。そのため、フォトマスクに要求される清浄度は厳しく、また配線パターンの微細化により欠陥要因となる異物の最小サイズが小さくなってきている。一方で一般的な薬液洗浄では、基板表面からおよそ100nm 以下の領域(stagnant layer:停滞層)で流れが実
    質的にゼロになるため、その領域にトラップされた微小異物の除去は困難である。
    薬液より強力な洗浄手法として、スプレーや超音波洗浄等の物理力を利用する洗浄手法が利用されている。それらの手法では物理力を大きくすることで停滞層内の微小異物まで除去可能であるが、フォトマスクの微細な配線パターンに対してはパターンが倒壊し、欠陥になるという問題があっ
    た。
    芝浦メカトロニクス(株)が開発した凍結洗浄[1],[2]では、基板上の水を凍らせることにより、異物を起点として形成される氷の体積膨張を利用している。膨張する氷が異物と基板の隙間を広げ、凍結と解凍を繰り返すことでやがて異物が基板から剥離され、解凍時に液化する水ごと基板上から排出される。そのため、基板に直接形成された配線パターンにはダメージを与えず、停滞層内の微小異物を除去可能である。
    本研究では、解凍時の基板の面内温度分布がPRE(particle removal efficiency:異物除去率)に与える影響を評価した。評価用基板として、ブランクスの石英基板(152mm×152mm)を用い、洗浄液には純水のみを使用した。基板の温度分布を直接測定することが困難であったため、放射温度計で測定した基板上の水の温度分布を基板の温度分布と仮定した。Fig.1 に測定した基板の温度分布画像例を、Table1 にPRE の面内温度差依存性を示す。この表から、面内の温度差が小さいほどPRE が向上することがわかる。その要因は、基板温度分布が不均一であるほど水平方向に氷が成長しやすく、異物を核とする氷が成長する前に、基板全面で水が凍結するためと考えている。基板温度分布の均一化により凍結回数の低減が可能となり、処理時間の大幅な短縮が実現され
    た。
    【参考文献】
    [1] Kei Hattori. et al., J. Micro/ Nanolithography, MEMS, and MOEMS, 044401-1(2020).
    [2] M. Kamiya. et al., “Freeze point monitoring system for freeze cleaning”, Proc. Photomask Japan,
    123250B (2022).

  3. 半導体デバイス製造における、生産技術~前工程担当者の視点から、異分野協業(パートナーシップ構築)の重要性とその実際~ Invited

    服部 圭

    グリーンDXプラズマコンソーシアム2024年度第1回講習会  2024.4.19  名古屋大学低温プラズマ科学研究センター

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    Event date: 2024.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学・EI創発工学館FUJIホール   Country:Japan  

  4. High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System International conference

    K. Sasahira, S. Nakamura, K. Hamada, S. Jimbo, and K. Hattori

    241st ECS Meeting  2022.5.31  The Electrochemical Society

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    Event date: 2022.5 - 2022.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Vancouver, BC, Canada, and Online   Country:Canada  

  5. Freeze point monitoring system for freeze cleaning method International conference

    K.Demura, M. Kamiya, M. Nakamura , and K. Hattori

    Photomask Japan 2022  2022.4.27  Photomask Japan and SPIE

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    Event date: 2022.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  6. Effects of dopant to DIW in freeze cleaning method

    Minami Nakamura, Kensuke Demura, Satoshi Nakamura , Masaya Kamiya, Kei Hattori

    2021.3.16 

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    Event date: 2021.3 - 3021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  7. Unique freeze cleaning technology International conference

    D. Matsushima, K. Demura, S. Jimbo, K. Hattori

    SPIE Advanced Lithography  2020.2.25  SPIE

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    Event date: 2020.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose , California   Country:United States  

  8. SiC dry etch technology employing Chemical Dry Etch. International conference

    D. Watanabe, M. Suzuki, K. Hattori

    International Symposium on Dry Process 2019  2019.11.22  International Symposium on Dry Process Organizing Committee

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:JMS Aster Plaza, Hiroshima   Country:Japan  

  9. Dry etching technologies for Cr film International conference

    T. Miyamoto, Y. Iino, S. Kodama, Y. Okamoto, K. Nakazawa, M. Karyu, H. Terakado, H. Shirahama, H. Ita, T. Yoshimori, H. Azumano, M. Muto, M. Iwami, K. Hattori

    Photomask Japan 2018  2018.4.18  Photomask Japan and SPIE

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    Event date: 2018.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama, Yokohama, Japan   Country:Japan  

  10. Expectations and prospects for new materials: From semiconductor device manufacturing viewpoint. Invited International conference

    Kei Hattori

    Semicon Japan 2016, CGMC Forum  2016.12.14  Semi Japan

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    Event date: 2016.12

    Language:English   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:Tokyo Big Sight   Country:Japan  

  11. Residue Free Etching of Al-Si-Cu Alloys Employing Magnetron RIE. International conference

    K. Hattori, M. Hori, M. Aoyama

    183rd. Meeting of Electrochemical Society  1993.5.20  The electrochemical Society

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    Event date: 1993.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hilton Hawaiian Village, Honolulu, Hawaii, USA   Country:United States  

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