Updated on 2021/11/26

写真a

 
TANIDE Atsushi
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) GaN Designated lecturer
Title
Designated lecturer

Degree 1

  1. 博士(工学) ( 2020.3   名古屋大学 ) 

 

Papers 3

  1. Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature Invited Reviewed

    Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    Journal of Vacuum Science & Technology B   Vol. 37 ( 021209 )   2019.3

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  2. Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source Reviewed

    Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 58 ( SAAF04 )   2019.1

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  3. First-principles Calculation Method for Electronic Structures of Nanojunctions Suspended between Semi-infinite Electrodes Invited Reviewed

    Takashi Sasaki, Yoshiyuki Egami, Atsushi Tanide, Tomoya Ono, Hidekazu Goto, Kikuji Hirose

    Materials Transactions   Vol. 45 ( 5 ) page: 1419 - 1421   2004.2

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    Language:English   Publishing type:Research paper (scientific journal)