Updated on 2021/11/29

写真a

 
FURUSHO Tomoaki
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Designated associate professor
Title
Designated associate professor

Degree 1

  1. doctor of engineering ( 2004.3   Kyoto Institute of Technology ) 

 

Papers 26

  1. Technologies for large-diameter SiC crystal growth and application of process informatics

    Ujihara Toru, Isono Masaru, Takeuchi Ichiro, Tagawa Miho, Harada Shunta, Zhu Can, Tsunooka Yosuke, Furusho Tomoaki, Suzuki Koki, Kutsukake Kentaro, Takaishi Masaki, Yu Wancheng, Dang Yifan

    Journal of the Japanese Association for Crystal Growth   Vol. 48 ( 3 )   2021

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    Language:Japanese   Publisher:The Japanese Association for Crystal Growth  

    <p>  We have been developing a SiC crystal growth technique using the solution method. As a result, we have achieved the growth of ultra-high quality crystals with extremely low dislocation density. The key to this is the reduction of dislocation density by utilizing the macro-step dislocation conversion phenomenon and the suppression of surface morphology roughness by controlling the flow in the solution. In order to put these technologies to practical use, we have developed a new machine learning technique for optimizing crystal growth conditions for large-diameter crystals. In this method, a model is constructed in the computer that reproduces the actual experiment quickly and accurately, and then hundreds of thousands or millions of trials are performed using the model to derive the experimental conditions with high efficiency. This means that optimization by surrogate models, which is one of the methods of process informatics, has been realized in crystal growth. By using these techniques, we were able to achieve 6-inch crystal growth in a very short time.</p>

    DOI: 10.19009/jjacg.48-3-04

    CiNii Article

  2. Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining Reviewed

    Hidetaka Miyake, Nobuyuki Tomita, Yoshiyuki Nakaki, Tomoaki Furusho, Atsushi Itokazu, Takashi Hashimoto, Yoshihiko Toyoda, Satoshi Yamakawa, Hiroaki Sumitani, Takeharu Kuroiwa, Tatsushi Sato

    Materials Science Forum   Vol. 778-780   page: 784   2014.2

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  3. Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC Reviewed

    Taro Nishiguchi, Tomoaki Furusho, Toshiyuki Isshiki, Koji Nishio, Hiromu Shiomi, Shigehiro Nishino

    Materials Science Forum   Vol. 600-603   page: 329   2008.9

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

    DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.329

  4. Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy Reviewed

    Mitsutaka Nakamura, Yoshikazu Hashino, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi, Masahiro Yoshimoto

    Materials Science Forum   Vol. 600-603   page: 967   2008.9

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  5. Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC Reviewed

    Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita

    Materials Science Forum   Vol. 556-557   page: 335   2007.9

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  6. 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method Reviewed

    Y. Kawai, Tomohiko Maeda, Yoshihiro Nakamura, Yoji Sakurai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi

    Materials Science Forum   Vol. 527-529   page: 263   2006.10

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

    DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.263

  7. Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds Reviewed

    Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi

    Materials Science Forum   Vol. 527-529   page: 35   2006.10

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    Authorship:Lead author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

    DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.35

  8. Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique Reviewed

    S. Yoneda, Tomoaki Furusho, H. Takagi, S. Ohta, Shigehiro Nishino

    Materials Science Forum   Vol. 483-485   page: 129   2005.5

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  9. Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis Reviewed

    Tomoaki Furusho, H. Takagi, S. Ota, Hiromu Shiomi, Shigehiro Nishino

    Materials Science Forum   Vol. 457-460   page: 107   2004.6

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    DOI: https://doi.org/10.4028/www.scientific.net/MSF.457-460.107

  10. High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials Reviewed

    S. Ota, Tomoaki Furusho, H. Takagi, S. Oshima, Shigehiro Nishino

    Materials Science Forum   Vol. 457-460   page: 115   2004.6

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  11. Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Reviewed

    H. Takagi, Taro Nishiguchi, S. Ohta, Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino

    Materials Science Forum   Vol. 457-460   page: 289   2004.6

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    DOI: https://doi.org/10.4028/www.scientific.net/MSF.457-460.289

  12. Crystal Growth of Wide Bandgap Materials by Sublimation method Reviewed

        2004.3

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    Authorship:Lead author   Language:English   Publishing type:Doctoral thesis  

  13. AlN Epitaxial Film on 6H-SiC(0001) Using MOCVD for GHz-Band SAW Devices Reviewed

    K. Uehara, C. -M. Yang, T. Furusho, S.-K, Kim, S. Kamada, H. Nakase, S. Nishino and K. Tsubouchi

    2003 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM     2003

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  14. Bulk crystal growth of cubic silicon carbide by sublimation epitaxy Reviewed

    Tomoaki Furusho, Makoto Sasaki, Satoru Ohshima and Shigehiro Nishino

    Journal of Crystal Growth   Vol. 249   page: 205   2003

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  15. Growth of p-Type SiC Layer by Sublimation Epitaxy Reviewed

    S. Ohta, T. Furusho, H. Takagi, S. Ohshima and S. Nishino

    Materials Science Forum   Vol. 433-436   page: 205   2003

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  16. Effect of Tantalum in Sublimation Growth of Aluminum Nitride Reviewed

    Tomoaki Furusho, Satoru Ohshima and Shigehiro Nishino

    Materials Science Forum   Vol. 433-436   page: 975   2003

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    Authorship:Lead author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  17. Growth-Mode Control in Sublimation Epitaxy of AlN Reviewed

    Tomoaki Furusho and Shigehiro Nishino

    Sensors and Materials   Vol. 14   page: 271   2002

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  18. Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique Reviewed International coauthorship

    T. Furusho, S. K. Lilov, S. Ohshima and S. Nishino

    Journal of Crystal Growth   Vol. 237-239   page: 1235   2002

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    Authorship:Lead author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  19. Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy Reviewed

    T. Furusho, T. Miyanagi, Y. Okui, S. Ohshima and S. Nishino

    Materials Science Forum   Vol. 389-393   page: 279   2002

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  20. Characterization of 2in SiC As-Grown Bulk by SWBXT at Spring-8 Reviewed

    M. Sasaki, A. Hirai, T. Miyanagi, T. Furusho, T. Nishiguchi, H. Shiomi and S. Nishino

    Materials Science Forum   Vol. 389-393   page: 407   2002

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  21. Observation of 2in SiC wafer by SWBXRT at Spring-8 Reviewed

    M. Sasaki, A. Hirai, T. Miyanagi, T. Furusho, T. Nishiguchi, H. Shiomi and S. Nishino

    Materials Science Forum   Vol. 389-393   page: 411   2002

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (conference, symposium, etc.)  

  22. Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique Reviewed

    Tomoaki Furusho, Satoru Ohshima and Shigehiro Nishino

    Materials Science Forum   Vol. 389-393   page: 1449   2002

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  23. Effect of Tantalum in Crystal Growth on Silicon Carbide by Sublimation Close Space Technique Reviewed

    Jpn. J. Appl. Phys.   Vol. 40   page: 6737   2001

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  24. Micropipe Filling by the Sublimation Close Space Technique Reviewed

    T. Furusho, S. Ohshima and S. Nishino

    Materials Science Forum   Vol. 353-356   page: 73   2001

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  25. High Growth Rate Epitaxy of SiC by Sublimation Close Space Technique Reviewed

    T. Furusho, Y. Kame, H. Houki, S. Ohshima and S. Nishino

    Extended abstract of 1st International Workshop on Ultra-Low-Loss Power Device Technology     page: 163   2000

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  26. Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy Reviewed

    T. Furusho, K. Matsumoto, H. Harima and S. Nishino

    Materials Science Forum   Vol. 338-342   page: 217   2000

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