研究者詳細 - 旭　良司

論文 - 旭　良司

分割表示 175 件中 161 - 175 件目／全件表示 >>

Indium-cadmium-oxide films having exceptional electrical conductivity and optical transparency: Clues for optimizing transparent conductors 査読有り Open Access

Wang A, Babcock JR, Edleman NL, Metz AW, Lane MA, Asahi R, Dravid VP, Kannewurf CR, Freeman AJ, Marks TJ

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 98 巻 ( 13 ) 頁： 7113 - 7116 2001年6月

Band-Gap Narrowing of Titanium Dioxide by Nitrogen Doping 査読有り

Morikawa Takeshi, Asahi Ryoji, Ohwaki Takeshi, AOKI Koyu, TAGA Yasunori

Japanese journal of applied physics. Pt. 2, Letters 40 巻 ( 6 ) 頁： L561 - L563 2001年6月

Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations 査読有り

Stampfl C, Mannstadt W, Asahi R, Freeman AJ

PHYSICAL REVIEW B 63 巻 ( 15 ) 2001年4月

Band-Gap Narrowing of Titanium Dioxide by Nitrogen Doping. 査読有り

Morikawa Takeshi, Asahi Ryoji, Ohwaki Takeshi, Aoki Koyu, Taga Yasunori

Japanese Journal of Applied Physics 40 巻 ( 6 ) 頁： L561 - L563 2001年

記述言語：英語掲載種別：研究論文（その他学術会議資料等）出版者・発行元：The Japan Society of Applied Physics

TiO2-based powder, including 0.1 at% of N doped in the rutile lattice, has been synthesized by oxidation of TiN. As a result, a significant shift of the absorption edge to a lower energy in the visible-light region has been observed. The substitutional doping of N into the TiO2 lattice is found to be effective; its 2p states contribute to the band-gap narrowing by mixing with O 2p as shown in ab initio electronic structure calculations.

DOI： 10.1143/JJAP.40.L561

CiNii Research

Effect of GGA on the half-metallicity of the itinerant ferromagnet CoS2 査読有り

Shishidou T., Freeman, A.J., Asahi, R.

Physical Review B - Condensed Matter and Materials Physics 64 巻 ( 18 ) 2001年

Screened-exchange LDA methods for films and superlattices with applications to the Si(100)2X1 surface and InAs/InSb superlattices 査読有り

Asahi R, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B 62 巻 ( 4 ) 頁： 2552 - 2561 2000年7月

Electronic and optical properties of anatase TiO2 査読有り

Asahi R, Taga Y, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B 61 巻 ( 11 ) 頁： 7459 - 7465 2000年3月

Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study 査読有り

Picozzi S, Continenza A, Asahi R, Mannstadt W, Freeman AJ, Wolf W, Wimmer E, Geller CB

PHYSICAL REVIEW B 61 巻 ( 7 ) 頁： 4677 - 4684 2000年2月

Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y 査読有り

Charache GW, DePoy DM, Raynolds JE, Baldasaro PF, Miyano KE, Holden T, Pollak FH, Sharps PR, Timmons ML, Geller CB, Mannstadt W, Asahi R, Freeman AJ, Wolf W

JOURNAL OF APPLIED PHYSICS 86 巻 ( 1 ) 頁： 452 - 458 1999年7月

Optical properties and electronic structures of semiconductors with screened-exchange LDA 査読有り

Asahi R, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B 59 巻 ( 11 ) 頁： 7486 - 7492 1999年3月

Micromachined sensors using polysilicon sacrificial layer etching technology 査読有り

Tabata O, Shimaoka K, Asahi R, Sugiyama S

SENSORS AND MATERIALS 8 巻 ( 1 ) 頁： 57 - 67 1996年

MICROMACHINED SENSORS USING POLYSILICON SACRIFICIAL LAYER ETCHING TECHNOLOGY 査読有り

SUGIYAMA S, TABATA O, SHIMAOKA K, ASAHI R

INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST 頁： 127 - 130 1994年

ANISOTROPIC ETCHING OF SILICON IN TMAH SOLUTIONS 査読有り

TABATA O, ASAHI R, FUNABASHI H, SHIMAOKA K, SUGIYAMA S

SENSORS AND ACTUATORS A-PHYSICAL 34 巻 ( 1 ) 頁： 51 - 57 1992年7月

INTEGRATED PYROELECTRIC INFRARED-SENSOR USING PVDF THIN-FILM DEPOSITED BY ELECTRO-SPRAY METHOD 査読有り

ASAHI R, SAKATA J, TABATA O, MOCHIZUKI M, SUGIYAMA S, TAGA Y

FERROELECTRIC THIN FILMS III 310 巻頁： 79 - 84 1992年

INFRARED LINEAR IMAGE SENSOR USING A POLY-SI PN JUNCTION DIODE-ARRAY 査読有り

TANAKA A, SUZUKI M, ASAHI R, TABATA O, SUGIYAMA S

INFRARED PHYSICS 33 巻 ( 4 ) 頁： 229 - 236 1992年

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