Faculty Profiles - ASAHI Ryoji

Papers - ASAHI Ryoji

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Band-Gap Narrowing of Titanium Dioxide by Nitrogen Doping. Reviewed

Morikawa Takeshi, Asahi Ryoji, Ohwaki Takeshi, Aoki Koyu, Taga Yasunori

Japanese Journal of Applied Physics Vol. 40 ( 6 ) page： L561 - L563 2001

Language：English Publishing type：Research paper (other academic) Publisher：The Japan Society of Applied Physics

TiO2-based powder, including 0.1 at% of N doped in the rutile lattice, has been synthesized by oxidation of TiN. As a result, a significant shift of the absorption edge to a lower energy in the visible-light region has been observed. The substitutional doping of N into the TiO2 lattice is found to be effective; its 2p states contribute to the band-gap narrowing by mixing with O 2p as shown in ab initio electronic structure calculations.

DOI： 10.1143/JJAP.40.L561

Effect of GGA on the half-metallicity of the itinerant ferromagnet CoS2 Reviewed

Shishidou T., Freeman, A.J., Asahi, R.

Physical Review B - Condensed Matter and Materials Physics Vol. 64 ( 18 ) 2001

Screened-exchange LDA methods for films and superlattices with applications to the Si(100)2X1 surface and InAs/InSb superlattices Reviewed

Asahi R, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B Vol. 62 ( 4 ) page： 2552 - 2561 2000.7

Electronic and optical properties of anatase TiO2 Reviewed

Asahi R, Taga Y, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B Vol. 61 ( 11 ) page： 7459 - 7465 2000.3

Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study Reviewed

Picozzi S, Continenza A, Asahi R, Mannstadt W, Freeman AJ, Wolf W, Wimmer E, Geller CB

PHYSICAL REVIEW B Vol. 61 ( 7 ) page： 4677 - 4684 2000.2

Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y Reviewed

Charache GW, DePoy DM, Raynolds JE, Baldasaro PF, Miyano KE, Holden T, Pollak FH, Sharps PR, Timmons ML, Geller CB, Mannstadt W, Asahi R, Freeman AJ, Wolf W

JOURNAL OF APPLIED PHYSICS Vol. 86 ( 1 ) page： 452 - 458 1999.7

Optical properties and electronic structures of semiconductors with screened-exchange LDA Reviewed

Asahi R, Mannstadt W, Freeman AJ

PHYSICAL REVIEW B Vol. 59 ( 11 ) page： 7486 - 7492 1999.3

Micromachined sensors using polysilicon sacrificial layer etching technology Reviewed

Tabata O, Shimaoka K, Asahi R, Sugiyama S

SENSORS AND MATERIALS Vol. 8 ( 1 ) page： 57 - 67 1996

MICROMACHINED SENSORS USING POLYSILICON SACRIFICIAL LAYER ETCHING TECHNOLOGY Reviewed

SUGIYAMA S, TABATA O, SHIMAOKA K, ASAHI R

INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST page： 127 - 130 1994

ANISOTROPIC ETCHING OF SILICON IN TMAH SOLUTIONS Reviewed

TABATA O, ASAHI R, FUNABASHI H, SHIMAOKA K, SUGIYAMA S

SENSORS AND ACTUATORS A-PHYSICAL Vol. 34 ( 1 ) page： 51 - 57 1992.7

INTEGRATED PYROELECTRIC INFRARED-SENSOR USING PVDF THIN-FILM DEPOSITED BY ELECTRO-SPRAY METHOD Reviewed

ASAHI R, SAKATA J, TABATA O, MOCHIZUKI M, SUGIYAMA S, TAGA Y

FERROELECTRIC THIN FILMS III Vol. 310 page： 79 - 84 1992

INFRARED LINEAR IMAGE SENSOR USING A POLY-SI PN JUNCTION DIODE-ARRAY Reviewed

TANAKA A, SUZUKI M, ASAHI R, TABATA O, SUGIYAMA S

INFRARED PHYSICS Vol. 33 ( 4 ) page： 229 - 236 1992

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Papers - ASAHI Ryoji