Updated on 2025/05/22

写真a

 
SAITO Genki
 
Organization
Graduate School of Engineering Materials Physics 2 Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Physical Science and Engineering
Title
Assistant Professor
Contact information
メールアドレス
External link

Degree 1

  1. Doctor (Engineering) ( 2014.3   Hokkaido University ) 

Research Interests 8

  1. Electron Microscopy

  2. Phosphor

  3. crystal structure

  4. Combustion synthesis

  5. Solution Plasma

  6. Material Science

  7. Nanoparticles

  8. Precipitate

Research Areas 2

  1. Nanotechnology/Materials / Metallic material properties

  2. Nanotechnology/Materials / Inorganic materials and properties

Current Research Project and SDGs 2

  1. 電子顕微鏡による構造解析に関する研究

  2. 金属材料の析出物に関する研究

Research History 4

  1. Nagoya University   Graduate School of Engineering Materials Physics   Assistant Professor

    2020.10

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    Country:Japan

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  2. Hokkaido University   Faculty of Engineering, Division of Materials Science and Engineering   Designated Assistant Professor

    2017.8 - 2020.9

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    Country:Japan

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  3. Hokkaido University   Faculty of Engineering Center for Advanced Research of Energy and Materials

    2014.10 - 2017.7

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    Country:Japan

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  4. 日本学術振興会特別研究員

    2013.4 - 2014.9

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    Country:Japan

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Education 2

  1. Hokkaido University   Faculty of Engineering   Doctor's course

    2011.4 - 2014.3

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  2. Hokkaido University   Faculty of Engineering Hokkaido   Master's course

    2009.4 - 2011.3

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Professional Memberships 4

  1. THE SOCIETY OF POWDER TECHNOLOGY, JAPAN

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  2. THE JAPANESE SOCIETY OF MICROSCOPY

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  3. THE IRON AND STEEL INSTITUTE OF JAPAN

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  4. THE JAPAN INSTITUTE OF METALS

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Awards 8

  1. 第30回 日本金属学会 奨励賞

    2020.9  

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  2. 日本金属学会・日本鉄鋼協会両支部合同サマーセッション 佐藤矩康賞

    2019.7  

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  3. 2016年度 APT賞 (APT Distinguished Paper Award)

    2017.4   粉体工学会  

    Genki Saito, Chunyu Zhu, Cheng-Gong Han, Norihito Sakaguchi, Tomohiro Akiyama

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  4. 日本顕微鏡学会 北海道支部 支部長賞

    2016.12  

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  5. 日本金属学会・日本鉄鋼協会両支部合同サマーセッション 佐藤矩康賞

    2016.7  

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Papers 67

  1. Combustion synthesis of Eu,Si‐doped AlN blue phosphor with varying Eu and Si concentrations Reviewed

    Genki Saito, Kazuto Harada, Yoshiharu Kagami

    Journal of the American Ceramic Society     2025.5

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    White light‐emitting diodes (LEDs) are favored for their efficiency and longevity. To enhance these properties, phosphors with high stability, such as nitrides and oxynitrides, are promising. Among these, AlN‐based blue phosphors co‐doped with Eu and Si offer high thermal and chemical stability, making them suitable for LEDs and displays. While high‐temperature synthesis methods are common, combustion synthesis provides a simpler alternative but requires optimization to control the reaction temperature, prevent unreacted material from remaining in the product, and enhance the luminescence efficiency. This study synthesizes Eu,Si‐doped AlN blue phosphors via combustion synthesis using Al, AlN, Eu<sub>2</sub>O<sub>3</sub>, Si<sub>3</sub>N<sub>4</sub>, and SrCO<sub>3</sub> as raw materials. The Eu and Si concentrations on luminescence properties are examined, along with the impact of Sr substitution at Eu sites to reduce the Eu content. The location of Eu in the synthesized phosphors is examined through atomic‐resolved scanning transmission electron microscopy. Photoluminescence and cathodoluminescence measurements reveal that optimized Eu and Si concentrations enhance luminescence through the formation of Si–Eu–O‐rich layers, while excessive Si induces yellowish emission due to the formation of Eu‐doped α‐Si₃N₄ or α‐SiAlON phases. Sr substitution increases luminescence intensity by reducing concentration quenching.

    DOI: 10.1111/jace.20672

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  2. High-pressure synthesis via glass and photoluminescence properties of BaGe2O5 III-type SrSi2O5:Eu2+ with 12-coordinated Sr2+ site Open Access

    Takumi Kitahara, Takuya Sasaki, Genki Saito, Ken Niwa, Masashi Hasegawa

    Ceramics International     2025.4

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    Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.ceramint.2025.04.317

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  3. Precipitation behavior during low-temperature aging in Al–Mg–Si alloy using STEM-EDS intensity correlograms Reviewed International journal Open Access

    Genki Saito, Yamato Sano, Kazuya Mizuno, Shoma Torigoe, Ken Takata, Toshihiro Okajima, Shunsuke Muto

    Materials Science and Engineering: A   Vol. 923   page: 147686 - 147686   2025.2

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.msea.2024.147686

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  4. Dopant site analysis of heavily Si-doped GaAs using a combination of electron microscopy and synchrotron radiation Reviewed Open Access

    Genki Saito, Akimitsu Ishizuka, Masahiro Ohtsuka, Shuma Ito, Toshihiro Okajima, Shunsuke Muto

    Journal of Applied Physics   Vol. 137 ( 2 ) page: 025703   2025.1

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    Silicon (Si) acts as an amphoteric impurity in gallium arsenide (GaAs), occupying various sites and exhibiting different coordination structures within the material. In this study, we employed electron microscopy, x-ray absorption spectroscopy, and theoretical simulations to analyze the Si-occupied sites and local coordination structures at concentrations ranging from 2 to 4 × 1019 atoms/cm3 in heavily doped GaAs. High angular resolution electron channeling x-ray spectroscopy was employed to analyze the Si-occupied sites. This method quantitatively estimates site occupancies through statistical analysis of atom site-dependent spectra. It was observed that Si substitutes for both Ga and As sites with nearly equal occupancies. Si K-edge x-ray absorption fine structure (XAFS) measurements and density functional theory calculations were used to explore the local coordination structures of Si. The peak positions of experimental XAFS spectra aligned closely with those of the calculated XAFS spectra for neutral SiGa–SiAs dumbbells, particularly when Si atoms were in close proximity. Considering the effect of vacancies, the experimental XAFS peak position corresponded well with that of the calculated Si dumbbell–VAs pair. In addition, the observed pre-peak was attributed to neutral Si, likely originating from Si clusters. These findings enhance our understanding of Si-related defect structures and their influence on the properties of heavily Si-doped GaAs.

    DOI: 10.1063/5.0238327

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  5. Diamond/graphene (carbon sp3-sp2) heterojunctions for neuromorphic device applications Invited Reviewed International journal Open Access

    H. Iwane, G. Saito, S. Muto, K. Ueda

    Journal of Materials Research     2024.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    Abstract

    Diamond/graphene (carbon sp<sup>3</sup>-sp<sup>2</sup>) interfaces exhibit various interesting and potentially useful electronic phenomena. The present work demonstrates the possibility of obtaining novel neuromorphic photodevices using such junctions. Junctions were found to show different photoconductivity relaxation behavior depending on their growth conditions such that various optoelectronic properties were observed. In particular, interfaces exhibiting shorter relaxation times could be used to construct image recognition devices mimicking short-term memory functions of the human brain. Using these devices, images of the hand-written numerals 0 through 9 could be optoelectronically recognized with an accuracy on the order of 80%, demonstrating both photo-detection and processing functions in a single device. These results suggest that novel image processing devices could be produced using graphene/diamond heterojunctions.

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    DOI: 10.1557/s43578-024-01395-5

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    Other Link: https://link.springer.com/article/10.1557/s43578-024-01395-5/fulltext.html

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MISC 2

  1. 多次元データ空間における情報の「形」を考慮したスペクトル分解

    武藤 俊介, 梅本 大樹, 大塚 真弘, 齊藤 元貴

    顕微鏡   Vol. 60 ( 1 ) page: 14 - 18   2025.5

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.11410/kenbikyo.60.1_14

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  2. Precipitation Behavior of Combined Precipitates in Carbon Steels

    Genki Saito

    Materia Japan   Vol. 60 ( 8 ) page: 486 - 491   2021.8

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Publisher:Japan Institute of Metals  

    DOI: 10.2320/materia.60.486

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Presentations 93

  1. Al-Mg-Si合金における等温熱処理下でのクラスタから析出物への遷移

    高田 健, 鳥越翔真, 齊藤元貴, 武藤俊介, 岡島敏浩

    軽金属学会 第148回春期大会  2025.5.18 

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    Event date: 2025.5

    Language:Japanese   Presentation type:Oral presentation (general)  

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  2. High-precision recognition of hand-written digits by graphene/diamond heterojunctions

    Haruki Iwane, Genki Saito, Syunsuke Muto, Kenji Ueda

    18th International Conference on New Diamond and Nano Carbons (NDNC2025)  2025.5.15 

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    Event date: 2025.5

    Language:English   Presentation type:Oral presentation (general)  

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  3. Interfacial structure/chemical state analysis of graphene/diamond heterojunctions using scanning/transmission electron microscopy and electron energy-loss spectroscopy

    Ganki Saito, Haruki Iwane, Kenji Ueda, Shunsuke Muto

    18th International Conference on New Diamond and Nano Carbons (NDNC2025)  2025.5.12 

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    Event date: 2025.5

    Language:English   Presentation type:Poster presentation  

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  4. 低温時効を施したAl-Mg-Si合金中の時効生成物のSTEM観察および分析 Invited

    齊藤元貴

    第10回 7000系アルミニウム合金の時効硬化挙動研究部会 軽金属学会  2025.3.28 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

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  5. Ni基超耐熱合金Alloy718積層造形体におけるSi量の影響

    北川 尚美, 松下 祐基, 坂口 紀史, 齊藤 元貴, 松浦 清隆

    粉体粉末冶金協会2024年度秋季大会  2024.11.19 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

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Research Project for Joint Research, Competitive Funding, etc. 4

  1. HAADF-STEM法による鋼中複合析出物界面の原子構造解析

    2019.4 - 2020.3

    長舩記念特別研究奨励金 

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    Authorship:Principal investigator  Grant type:Competitive

  2. ポーラスカーボン/ナノ粒子複合体による合金系リチウムイオン電池負極材料の高性能化

    2016.4 - 2017.3

    単年度研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

  3. EELSによるマンガン系複合酸化物の電子状態分析

    2015.4 - 2016.3

    平成27年度 若手研究員等研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

  4. 液中プラズマにより作製したリチウムイオン電池電極材料の特性評価

    2012.4 - 2013.3

    博士後期課程在学生研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

KAKENHI (Grants-in-Aid for Scientific Research) 7

  1. 組成相関図の統計的解析に基づくナノ組織形成機構の解明

    Grant number:25K08254  2025.4 - 2028.3

    日本学術振興会  科学研究費助成事業  基盤研究(C)

    齊藤 元貴

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  2. Elucidation of Luminescence Mechanism of Aluminum Nitride Phosphors by Integrated Electron Spectroscopy

    Grant number:22K04684  2022.4 - 2025.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)  Grant-in-Aid for Scientific Research (C)

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    Authorship:Principal investigator 

    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

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  3. ナノ電子プローブ実・逆空間走査による統合データ駆動型材料物性解析

    Grant number:21H04616  2021.4 - 2025.3

    日本学術振興会  科学研究費助成事業 基盤研究(A)  基盤研究(A)

    武藤 俊介, 大塚 真弘, 齊藤 元貴, 志賀 元紀, 岡島 敏浩

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    Authorship:Coinvestigator(s)  Grant type:Competitive

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  4. Microstructure control of carbon steel based on the investigation of precipitation mechanism of fine precipitates

    Grant number:20K15055  2020.4 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists  Grant-in-Aid for Early-Career Scientists

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

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  5. Three-dimensional analysis of dopant atoms in phosphors via HAADF-STEM imaging

    Grant number:17K14805  2017.4 - 2019.3

    Saito Genki

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

    Three-dimensional (3D) distributional analysis of individual dopant atoms in materials is important to understand their properties. In this study, through-focus high-angle annular dark-field (HAADF) imaging was developed for 3D distributional analysis of dopant atoms in phosphors, in which the defocus was changed in narrow steps, and the contrast profile obtained for various depths at each dopant column was analyzed to determine the depth position of dopant atoms. For the analysis of Eu atoms in Ca-α-SiAlON, the effect of convergence semi-angle was investigated using multi-slice image simulation. Because the electron beam tends spread instead of channeling along the atomic columns, the large convergence semi-angle greatly increased the depth resolution. Through-focus HAADF-STEM imaging was used to analyze the Eu atom distribution. The contrast depth profile recorded with a narrow step width clearly analyzed the possible depth positions of Eu atoms.

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Industrial property rights 6

  1. 熱間鍛造用鋼およびその製造方法

    田中順也, 松浦清隆, 坂口紀史, 齊藤元貴

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    Application no:特願2024-149798  Date applied:2024.8

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  2. 浸炭用鋼

    佐野 太一, 大野 宗一, 坂口 紀史, 齊藤 元貴

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    Application no:特願2022-053639  Date applied:2022.3

    Patent/Registration no:特許第7142306号  Date registered:2022.9  Date issued:2022.9

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  3. 窒化アルミニウムの製造方法

    福永 豊, 秋山 友宏, 仙田 竜也, 能村 貴宏, 齊藤 元貴

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    Application no:特願2018-217577  Date applied:2018.11

    Announcement no:特開2020-083680  Date announced:2020.6

    Patent/Registration no:特許第7175470号 

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  4. AINファイバー製造方法

    秋山友宏, 平中絢子, 能村貴宏, 齊籐元貴, 仙田竜也

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    Application no:特願2017-141422  Date applied:2017.7

    Announcement no:特開2019-019039  Date announced:2019.2

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  5. YAG系蛍光体およびその製造方法

    秋山 友宏, 朱 春宇, 齊藤 元貴, 大山 純平

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    Application no:特願2015-122976  Date applied:2015.6

    Announcement no:特開2017-8162  Date announced:2017.1

    Patent/Registration no:特許第6602066号  Date registered:2019.10 

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Teaching Experience (On-campus) 6

  1. 物質科学特別輪講

    2021

  2. ナノ顕微分光物質科学セミナー

    2021

  3. ナノ顕微分光物質科学特別実験及び演習

    2021

  4. 物理工学実験第3

    2021

  5. 物理工学実験第2

    2021

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