2022/07/26 更新

写真a

アオキ タカアキ
青木 学聡
AOKI Takaaki
所属
運営支援組織 情報連携推進本部 情報戦略室 教授
職名
教授
外部リンク

学位 1

  1. 博士(工学) ( 2000年3月   京都大学 ) 

研究キーワード 8

  1. ナノ精度計測技術

  2. ナノ精度製造技術

  3. 研究情報システム

  4. SIMS

  5. 研究データマネジメント

  6. 原子スケールシミュレーション

  7. ナノ精度計測技術

  8. クラスターイオン

研究分野 2

  1. 情報通信 / 情報ネットワーク

  2. ナノテク・材料 / 薄膜、表面界面物性

経歴 6

  1. 名古屋大学   情報連携推進本部 情報戦略室   教授

    2020年4月 - 現在

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    国名:日本国

  2. 京都大学   情報環境機構   准教授

    2016年3月 - 2020年3月

  3. 京都大学   工学研究科   講師

    2007年2月 - 2016年2月

  4. 京都大学   工学研究科   産学官連携助手

    2005年 - 2007年1月

  5. 新エネルギー・産業技術開発機構からの委託事業「次世代量子ビーム利用ナノ加工技術プロセスの開発事業」研究員

    2002年 - 2005年

  6. 新エネルギー・産業技術総合開発機構 新規産業創出型産業科学技術研究開発制度「クラスターイオンビームプロセステクノロジー」研究員

    2000年 - 2004年

▼全件表示

学歴 2

  1. 京都大学   大学院工学研究科   電子物性工学専攻

    1997年4月 - 2000年3月

  2. 京都大学   大学院工学研究科   電子物性工学専攻

    1995年4月 - 1997年3月

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    国名: 日本国

所属学協会 5

  1. 情報処理学会

    - 現在

  2. 日本MRS

    - 現在

  3. 応用物理学会

  4. 日本MRS

  5. 情報処理学会

委員歴 8

  1. 一般社団法人 大学ICT推進協議会   理事  

    2022年5月 - 現在   

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    団体区分:その他

  2. 研究データ利活用協議会   企画委員会委員長  

    2020年4月 - 2022年3月   

  3. 一般社団法人 情報処理学会   論文誌デジタルプラクティス編集委員会  

    2020年1月 - 現在   

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    団体区分:学協会

  4. 研究データ利活用協議会   企画委員  

    2019年4月 - 2022年3月   

  5. 大学ICT推進協議会   研究データマネジメント部会 主査  

    2017年6月 - 現在   

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    団体区分:学協会

  6. 一般社団法人 日本MRS   理事  

    2017年6月 - 現在   

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    団体区分:学協会

  7. 一般社団法人 大学ICT推進協議会   研究データマネジメント部会主査  

    2017年6月 - 2022年5月   

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    団体区分:その他

  8. 日本MRS   理事  

    2015年7月 - 現在   

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    団体区分:学協会

▼全件表示

 

論文 283

  1. 情報基盤系教職員向け研究データ管理(RDM)教材の検討・制作

    元木 正和, 古川 雅子, 青木 学聡

    情報処理学会研究報告   2022-IOT-56 巻 ( 15 ) 頁: 1 - 8   2022年3月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

    2021 年は第 6 期科学・技術イノベーション基本計画の発表,国立情報学研究所 Research Data Cloud(NII-RDC)の提供開始等,わが国におけるオープンサイエンス,そして研究データ管理に変革が訪れた年ともいえる.本稿では,研究データ管理(RDM)についてより多くの学術機関が取り組めるよう,組織的 RDM の推進に向けた情報基盤系教職員向けの RDM 教材に関する AXIES(大学 ICT 推進協議会)とJPCOAR(オープンアクセスリポジトリ推進協会)の有志による検討・制作についての合同の取組を報告する.

  2. 組織的RDM支援サービスのためのエンタープライズアーキテクチャの検討

    青木学聡

    情報処理学会研究報告   2021-IOT-55 巻 ( 7 ) 頁: 1 - 5   2021年8月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

    研究データ管理 (Research Data Management,RDM) は,研究の開始から終了までを通じ,どのような研究データをどのように扱うかを定め,これを実践することである.この中には,研究データの入手,保存,共有,公開,破棄といった,研究データに対するあらゆる操作が含まれるが,多くの場合,これらは研究者毎の裁量下において選択されている.この一方,今日のオープンサイエンスの浸透,学術機関におけるガバナンス強化を背景とし,組織単位での RDM 手法の統一,共通化が求められている.組織単位での RDM 支援サービスの導入は,組織と研究者の意向,費用対効果等,様々な対立軸が存在し,これらのギャップを明確にしながら,組織と研究者の合意点を探る必要がある.本稿では,組織が RDM 支援サービスを導入する場合に想定するビジネスモデルの考え方,またこれを実現するためのエンタープライズアーキテクチャの構成方法について検討する.

  3. オープンサイエンスと研究データ管理の動向 招待有り

    青木学聡

    情報処理   62 巻 ( 5 ) 頁: d1 - d11   2021年4月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(学術雑誌)  

  4. MeV-SIMS measurement of lithium-containing electrolyte 国際誌

    Seki T., Nonomura T., Aoki T., Matsuo J.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   479 巻   頁: 229 - 232   2020年9月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Secondary ion mass spectrometry (SIMS) is a method with high surface sensitivity that allows both elemental and molecular analysis. The MeV-SIMS technique uses heavy ion beams with energy in the MeV range, and samples can be measured under ambient conditions because of the high transmission capability of these ions at low vacuum pressures. Ambient MeV-SIMS is a suitable method for investigating the reactions at the electrode–electrolyte interface. In contrast, however, in this method, chemical noise originating from ionized residual gases can be found with high intensity. Under the conditions, signals from the surface have to be distinguished from the chemical noise. In this paper, MeV-SIMS measurements of a Li-containing electrolyte were performed and a method was established for separating out chemical noise and signals from the sample surface. The detection of a number of Li-containing electrolytic compounds from the sample surface by an ambient MeV-SIMS system was successful.

    DOI: 10.1016/j.nimb.2020.07.007

    Scopus

  5. 研究データマネジメントに関する研究者アンケートの設計と実施

    青木学聡, 船守美穂, 松原茂樹, 結城憲司, 宮本貴朗, 西村浩二

    情報処理学会研究報告   2020-IOT-48 巻 ( 14 ) 頁: 1 - 7   2020年2月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

    オープンサイエンスの推進および研究公正の強化等の社会的要請に従い,学術機関が研究データポリシーの作成,情報インフラ構築,教育の実施,等の組織的な研究データマネジメント (Research Data Management, RDM) 支援体制の整備が求められようになっている.機関による RDM 支援体制整備の端緒として,RDM に対する研究者の理解度の確認と機関に対する要求の取りまとめがある.そこで,複数の機関が共同で研究者アンケートの質問票を作成し,これを雛形として機関毎の調査を実施した.本発表では,質問票の構成や雛形利用ガイドラインの作成の経緯と調査結果を紹介する.あわせて,本アンケートも含め,機関での RDM 推進のためのフレームワーク整備,ベンチ―マークの在り方ついて検討する.

  6. Optimized Alkali-Metal Cationization in Secondary Ion Mass Spectrometry of Polyethylene Glycol Oligomers with up to m/z 10000: Dependence on Cation Species and Concentration

    Gnaser Hubert, Oki Rika, Aoki Takaaki, Seki Toshio, Matsuo Jiro

    ANALYTICAL CHEMISTRY   92 巻 ( 1 ) 頁: 1511 - 1517   2020年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Analytical Chemistry  

    In secondary ion mass spectrometry (SIMS), the detection of large organic molecules is accomplished using cluster ion bombardment. Ion formation often proceeds via cationization, through the attachment of (alkali) metal ions to the molecule. To study this process, the emission of secondary ions sputtered from polyethylene glycol (PEG) samples with molecular weights (MW) of 1000-10000 was examined. They were mixed with alkali-metal trifluoroacetic acid (X-TFA, where X = Li, Na, K, or Cs) in a wide range of concentrations to investigate the efficiency of cationization for 10 keV Ar2000+ cluster irradiation. Typically, cationized molecular ions [M + X]+ (with repeat units n of up to ∼250, corresponding roughly to m/z 11000) and some characteristic fragment species were observed in the mass spectra. For all alkali cations, the oligomer intensities increase strongly with the molecular composition ratios X-TFA/PEG in the samples, and values of 5-10 seem to be optimal. With increasing molecular weight, the intensity of oligomer ions relative to the total number of ions decreases; as the latter remains rather constant, this implies that more fragment species are formed. The ion yields (detected ions per primary ions) of cationized [M + Na]+ oligomers sputtered from a PEG decrease very strongly with their size n: from 5.2 × 10-6 at n = 21 (MW ∼1000) to 4.5 × 10-10 at n ∼245 (MW ∼11000). By contrast, the total yields Ytot+ show only a small variation for these different specimens, from 1.3 × 10-5 to 3.7 × 10-5,.

    DOI: 10.1021/acs.analchem.9b04770

    Web of Science

    Scopus

  7. 京都大学教育研究活動データベースの現状と課題

    梶原 弘貴, 澤田 浩文, 赤坂 浩一, 渥美 紀寿, 青木 学聡

    2019年度大学ICT推進協議会年次大会     頁: .   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  8. 日本の学術機関における研究データ管理体制整備の課題と試み

    船守 美穂, 青木 学聡, 外山 勝彦, 山地 一禎

    情報処理学会研究報告   2019-IOT-47 巻 ( 17 ) 頁: 1 - 8   2019年9月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)   出版者・発行元:情報処理学会  

    学術研究活動により生み出される研究データを積極的に管理・共有しようという流れが世界的に鮮明となっている.研究データはこれまで研究者により管理されてきたが,近年は効率性および説明責任等の観点から,機関がインフラを整備し,研究者の研究活動を支援するとともに,研究不正防止等の機関としての対応を図る必要性が高まっている.しかし研究データ管理は比較的新しい潮流のため,日本の大学等学術機関における取り組みは,端緒に就いたばかりである.本研究では,国内複数大学と研究会を開催し,各大学における研究データ管理の現状および取り組み促進にあたっての課題を明確にした.研究データ管理において関係する複数部署が共通認識を持つこと,研究データ管理が大学において的確に位置づけられること,研究データの機関にとっての資産価値が評価されること,研究データ管理のためのインフラと支援体制が用意されること,研究データ管理の教育や人材育成がなされることなどが必要であると指摘された.これら課題および考え方をコンパクトにまとめた「学術機関における研究データ管理に関する提言」を大学ICT推進協議会(AXIES)名で草稿した.これに続いて,学内のニーズを把握するためのアンケート雛形および,研究データ管理に関する事例集を作成し,国内大学の参考に供する予定である.

  9. Promoting Common Understanding on Research Data Management using Rubric 査読有り 国際誌

    AOKI Takaaki, KAJITA Shoji, MOTOKI Tamaki, IYEMORI Toshihiko, KAWAGUCHI Tomoko

    Proc. 2019 8th International Congress on Advanced Applied Informatics (IIAI-AAI)     頁: 387 - 390   2019年7月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Proceedings - 2019 8th International Congress on Advanced Applied Informatics, IIAI-AAI 2019  

    Research data management (RDM) is the activity to describe and practice what kind of data is to be used/obtained/generated, and how that data is analyzed/saved/shared or published from the plan to completion of the research project. The RDM consists ambiguous concept so that the understanding of RDM is diverse according to each researcher. In order to foster a common recognition of RDM in a Japanese university, a workshop that researchers utilize a rubric to evaluate and review their attitudes to RDM was held. In this paper, we report the process of the development of RDM rubric and the workshop.

    DOI: 10.1109/IIAI-AAI.2019.00085

    Scopus

  10. 研究データマネジメントルーブリックによる自己評価と共通認識の醸成

    青木 学聡, 梶田 将司, 元木 環, 家森 俊彦, 川口 朋子

    DEIM Forum 2019     頁: C2-1   2019年3月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

  11. 研究データ管理に関するeラーニング教材への反応と、研究支援者向けの新教材の開発について

    芝翔太郎, 林正治, 常川真央, 山地一禎, 尾城孝一, 南山泰之, 青木学聡, 天野絵里子, 西薗由依

    大学ICT推進協議会2018年度年次大会 (AXIES2018) 論文集   TB1-4 巻   頁: 1 - 4   2018年11月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

  12. 招待講演 新しいプローブイオンを用いたSIMSによる有機材料分析 (光・量子デバイス研究会 微細加工技術とバイオ・メディカル応用)

    瀬木 利夫, 青木 学聡, 松尾 二郎

    電気学会研究会資料. OQD = The papers of technical meeting on optical and quantum devices, IEE Japan   2018 巻 ( 22 ) 頁: 29-33   2018年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  13. SIMS技術の飛躍的発展を支える新技術:新奇なイオンビーム開発から先端質量分析法まで

    松尾 二郎, 瀬木 利夫, 青木 学聡

    表面と真空   61 巻 ( 7 ) 頁: 426 - 434   2018年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面真空学会  

    <p>Recent progress of SIMS technique is reported in conjunction with novel primary ion beams and advanced mass spectrometers. Numerous applications of SIMS have been proposed and demonstrated in last decade, covering from organic semiconductors to cells and tissues. One of the biggest problems was "Static-Limit" for analysis of organic molecules, which is very fragile for ion bombardment. After innovation of massive cluster ion beams, the issue of "Static-Limit" has been overcame. This opens a new possibility for SIMS to analyze organic materials. Ultra-high mass resolution mass spectrometer, MS/MS technique, cationization enhancement and future prospects of SIMS are discussed.</p>

    DOI: 10.1380/vss.61.426

  14. Cationization and fragmentation of molecular ions sputtered from polyethylene glycol under gas cluster bombardment: An analysis by MS and MS/MS 査読有り 国際誌

    Thopan Prutchayawoot, Gnaser Hubert, Oki Rika, Aoki Takaaki, Seki Toshio, Matsuo Jiro

    INTERNATIONAL JOURNAL OF MASS SPECTROMETRY   430 巻   頁: 149 - 157   2018年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:International Journal of Mass Spectrometry  

    In secondary ion mass spectrometry (SIMS), the detection of large organic molecules is accomplished using cluster ion bombardment. Ion formation often proceeds via cationization, through the attachment of (alkali) metal ions to the molecule. To study this process and its efficiency, the emission of secondary ions sputtered from polyethylene glycol (PEG 3000) mixed with Na trifluoroacetic acid (NaTFA) was investigated for 10 keV Ar2000+ cluster irradiation by MS and MS/MS. Apart from cationized molecular ions [Mn+Na]+ (with repeat units n of up to ∼80), fragment species were found corresponding to the loss of a water moiety or of two H atoms, respectively. In addition, an abundant flux of doubly-charged molecular ions, [Mn+2Na]2+ was observed in the mass spectra. Quite surprisingly, even triply-charged ions [Mn+3Na]3+ were detected. The ratio of [Mn+2Na]2+ to [Mn+Na]+ increases with increasing size of the molecules and reaches unit for n ∼70. The yield of [Mn+Na]+ ions around m/z 3000 depends strongly on the molecular composition ratio of NaTFA/PEG in the samples and can be enhanced by a factor of 50 by increasing the Na content. In MS/MS operation, [Mn+Na]+ and [Mn+2Na]2+ ions were subjected to collisions with Ar atoms; for sufficiently high collision energies, dissociation leads to characteristic fragment species. Collisions of [Mn+2Na]2+ assert the existence of doubly-charged ions in the sputtered flux. Collision cross sections were found to amount to ∼(0.5–1)×10−15 cm2 for center-of-mass collision energies of ∼3 eV.

    DOI: 10.1016/j.ijms.2018.05.012

    Web of Science

    Scopus

  15. Development and Deployment of Research Data Preservation Policy at a Japanese Research University in 2016 国際誌

    Aoki Takaaki, Kajita Shoji, Akasaka Hirokazu, Takeda Hagane

    2017 6TH IIAI INTERNATIONAL CONGRESS ON ADVANCED APPLIED INFORMATICS (IIAI-AAI)     頁: 120 - 123   2017年7月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Proceedings - 2017 6th IIAI International Congress on Advanced Applied Informatics, IIAI-AAI 2017  

    This paper reviews the policy development and deployment for research data preservation at Kyoto University, Japan, during fiscal year (FY) 2016. The universitys regulations and guidelines for research integrity and data preservation were formulated in FY2014 and 2015, in response to statements from the Ministry of Education, Culture, Sports, Science and Technology, and supplemental comments by Science Council of Japan (in FY2014). In FY2016, several departments at KU developed a prototype system for research data preservation using open source web frameworks with preference to agility of deployment rather than robustness. The prototype system also worked as the proof of concept for a full-service research data preservation system, which is due to be deployed by KUs central IT department in FY2017 for university-wide use.

    DOI: 10.1109/iiai-aai.2017.129

    Web of Science

    Scopus

  16. 研究ライフサイクルに沿ったアカデミックデータマネジメント支援環境による 全学研究基盤強化構想

    梶田 将司, 青木 学聡

    情報処理学会研究報告   2017-IOT-38 巻 ( 4 ) 頁: 1 - 6   2017年6月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

  17. Angled etching of Si by ClF3–Ar gas cluster injection 査読有り 国際誌

    Toshio Seki, Hiroki Yamamoto, Takahiro Kozawa, Tadashi Shojo, Kunihiko Koike, Takaaki Aoki, Jiro Matsuo

    Japanese Journal of Applied Physics   56 巻 ( 6S2 ) 頁: 06HB02   2017年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

    Reactive gas cluster injection is an etching method that uses a neutral cluster beam without ions. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from plasma. ClF3-Ar gas cluster injection was performed using a nozzle placed at various angles in the range of 0-78° from the normal to the sample. The Si substrate was anisotropically etched in the direction of the cluster beam, although the incident angle of the cluster beam was oblique. Oblique holes of 100nm diameter and oblique square pillars of 3 μm width were fabricated with a high aspect ratio by angled cluster injection. It is expected that this process will create unprecedented structures for use in micro-electromechanical systems (MEMSs) or photonic crystals.

    DOI: 10.7567/jjap.56.06hb02

    Web of Science

    Scopus

  18. Fabrication of a Si lever structure made by double-angled etching with reactive gas cluster injection 査読有り 国際誌

    Seki T., Yamamoto H., Kozawa T., Koike K., Aoki T., Matsuo J.

    APPLIED PHYSICS LETTERS   110 巻 ( 18 )   2017年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. Low-damage Si etching can be realized with this method because of the very low irradiation energy; the product is free of charge-up problems and vacuum UV light damage. The ClF3-Ar neutral cluster injection system for angled etching was constructed with a nozzle that was placed at 45° from the sample normal. The angled anisotropic Si etching is demonstrated with a high aspect ratio. The lever structure, which is often used in microelectromechanical systems (MEMSs), was fabricated by double-angled etching with reactive gas cluster injection. A simple fabrication process for the lever structure was achieved by double-angled etching with reactive gas cluster injection. These results show that various three-dimensional (3D) structures can be fabricated by repeated anisotropic etching with varying angles and directions. It is expected that the angled anisotropic etching process will enable the creation of unprecedented structures for use in MEMSs or photonic crystals.

    DOI: 10.1063/1.4982970

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  19. BYOD-PCとコース管理システムを活用した電気電子回路演習科目の実施

    青木 学聡, 久門 尚史, 木村 真之, 蛯原 義雄, 下田 宏

    研究報告教育学習支援情報システム(CLE)   2017 巻 ( 3 ) 頁: 1 - 5   2017年3月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)   出版者・発行元:情報処理学会  

    京都大学電気電子工学科は 2016 年度に BYOD-PC を前提とした電気電子回路演習科目を必修科目として開始した.必修科目として演習を成立させるために 「ソフトウェア,ハードウェアの選定」, 「必修科目のためのセーフティネット構築」 を準備段階において検討し, これに合わせて演習カリキュラムを設計した. 一方, 演習の実施時段階においては, 京都大学のコース管理システムを積極的に活用し, 「テキスト, 各種資料の配布」, 「課題提出と個々の進捗確認」 をすべて電子的に行った. BYOD-PC とコース管理システムを活用することで, 演習科目における反転学習の導入, 個人単位のスキルの習得とグループワークによるプロジェクト的活動の連携といった, 新しい形態での演習科目を実現できた.

  20. 研究データ管理(RDM)トレーニングツールの構築と展開 査読有り

    常川 真央, 天野 絵里子, 大園 隼彦, 西薗 由依, 前田 翔太, 松本 侑子, 南山 泰之, 三角 太郎, 青木 学聡, 尾城 孝一, 山地 一禎

    情報知識学会誌   27 巻 ( 4 ) 頁: 362 - 365   2017年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:情報知識学会  

    <p> 研究データ管理は,研究プロセスの透明性を高め不正を防止する目的とともに,オープンサイエンスにおける研究データ共有を支える重要なプロセスである.しかし,研究データ管理のスキルを持つ人材はまだまだ少ないのが実状である.そこでオープンアクセスリポジトリ推進協会(JPCOAR)は,研究データタスクフォースを組織し,研究データ管理(RDM)のスキルを習得するためのトレーニングツールを開発し,2017年6月6日にWeb上で公開した.さらに,国立情報学研究所に協力し,オンライン講座「オープンサイエンス時代の研究データ管理」を11月15日に開講する予定である.本発表では,こうしたRDMの習得を支援する一連の活動について紹介したうえで,今後の研究データ管理業務を担当する人材育成について論じる.</p>

    DOI: 10.2964/jsik_2017_042

  21. エンタープライズコンテント管理システムと 光ディスクストレージによるデジタルデータ長期保存の検討

    青木 学聡, 梶田 将司, 赤坂 浩一, 武田 鋼

    大学ICT推進協議会2016年度年次大会     2016年12月

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    記述言語:日本語   掲載種別:研究論文(研究会,シンポジウム資料等)  

  22. 利用者側での CMS の運用改善 -- Sakai における課題ツールを例に

    青木 学聡, 喜多 一

    大学ICT推進協議会2016年度年次大会     2016年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)  

    AXIES: 大学ICT推進協議会 2016年度 年次大会Webベースの情報システムは操作面での改善をユーザサイドでは行いにくいと いう欠点がある.コース管理システム(CMS)も教員が本格的に利用する上では授業を 受講する多くの学生と個々にインタラクションする場合の操作量が相当に多いという 課題があるがこれを実運用するサーバ側で改善することは管理上の問題なども発生す る.本報告では Sakai の課題ツールで回答を一括ダウンロードできることを利用し, 回答を効果的に閲覧するプログラムを作成することでユーザ側での運用を改善する試 みについて報告する.

  23. Molecular dynamics simulations study of nano particle migration by cluster impact 査読有り

    Takaaki Aoki, Toshio Seki, Jiro Matsuo

    Surface and Coatings Technology   306 巻   頁: 63 - 68   2016年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier {BV}  

    © 2016 Elsevier B.V.Molecular dynamics (MD) simulations are performed in order to investigate the radiation effects of a huge and slow gas cluster for the surface cleaning process. When a large argon cluster with the size ranging from 20,000 to 300,000 is accelerated with a total of 30. keV, each constituent atom carries very low energy ranging from 1.5. eV/atom to 0.1. eV/atom. In many cases, the cluster does not penetrate the solid target surface but is deflected in a lateral direction. This collisional process results in a high density particle flow spreading along the surface plane due to cohesion of the cluster, which suggests the capability to modify the irregular surface structure, without damage in the target. The MD simulations demonstrate that such a huge cluster sweeps a nano particle (NP, 3. nm in radius) attached on a planar silicon target&#039;s surface. From the investigation of various conditions of cluster impact, it is found that the migration distance is correlated with the kinetic energy applied on the NP by the impact of cluster atoms. Additionally, the MD results suggest the existence of optimized parameters for the maximum migration distance for the offset distance between the cluster and the NP, and the cluster size for constant total energy (equivalent to energy per atom or kinetic energy density). The optimized offset distance was estimated as the summation of radii of the incident cluster and the NP. The optimized energy per atom was suggested around 0.6. eV/atom, where the cluster efficiently spreads in lateral direction keeping higher kinetic energy density of particle flow.

    DOI: 10.1016/j.surfcoat.2016.04.053

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    その他リンク: http://orcid.org/0000-0002-5926-4903

  24. Reactive etching by ClF3–Ar neutral cluster beam with scanning 査読有り

    Toshio Seki, Yu Yoshino, Takehiko Senoo, Kunihiko Koike, Takaaki Aoki, Jiro Matsuo

    Japanese Journal of Applied Physics   55 巻 ( 6S2 ) 頁: 06HB01   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

    A reactive gas cluster injection system with a scanning function was developed in order to increase the processing area. High-precision anisotropic etching with an aspect ratio of 7 was achieved for ClF3 cluster etching without scanning. However, with scanning, the aspect ratio for etching decreased to 1.5 because the side walls were etched by the gas retained in the trench. By reducing the source gas pressure, increasing the target distance, and mixing He in the source gas, anisotropic etching with an aspect ratio of about 6.3 was achieved with this apparatus.

    DOI: 10.7567/jjap.55.06hb01

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  25. Development of ambient SIMS using mega-electron-volt-energy ion probe 査読有り

    Masakazu Kusakari, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   34 巻 ( 3 )   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:American Institute of Physics Inc.  

    A new secondary ion mass spectrometry device using an ion probe in the heavy mega-electron-volt (MeV) energy range was developed for detecting large intact molecules with high sensitivity under ambient conditions. The instrument is based on the characteristics induced by the MeV-energy heavy ions, namely, electronic excitation induced in the near-surface region and the high transmission capability under ambient conditions. The secondary ions were transported to the mass analyzer effectively by an electric field and atmospheric gas flow, whereas the chemical impurities from the gas were cleared by using an electric field. In addition, this new ambient analysis approach enables evaluation not only of solid samples, but also of liquid samples that were evaporated under advanced vacuum. In this study, liquid water and samples of a benzoic acid solution were measured under ambient conditions.

    DOI: 10.1116/1.4941724

    Scopus

  26. Development of ambient SIMS using mega-electron-volt-energy ion probe 査読有り

    Kusakari M.

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   34 巻 ( 3 )   2016年5月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  

    DOI: 10.1116/1.4941724

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  27. Secondary ion emission from leucine and isoleucine under argon gas-cluster ion bombardment 査読有り

    Gnaser H.

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   34 巻 ( 3 )   2016年5月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  

    DOI: 10.1116/1.4939497

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  28. Development of ambient SIMS using mega-electron-volt-energy ion probe 査読有り

    Masakazu Kusakari, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   34 巻 ( 3 ) 頁: 4   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:A V S AMER INST PHYSICS  

    A new secondary ion mass spectrometry device using an ion probe in the heavy mega-electron-volt (MeV) energy range was developed for detecting large intact molecules with high sensitivity under ambient conditions. The instrument is based on the characteristics induced by the MeV-energy heavy ions, namely, electronic excitation induced in the near-surface region and the high transmission capability under ambient conditions. The secondary ions were transported to the mass analyzer effectively by an electric field and atmospheric gas flow, whereas the chemical impurities from the gas were cleared by using an electric field. In addition, this new ambient analysis approach enables evaluation not only of solid samples, but also of liquid samples that were evaporated under advanced vacuum. In this study, liquid water and samples of a benzoic acid solution were measured under ambient conditions. (C) 2016 American Vacuum Society.

    DOI: 10.1116/1.4941724

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    J-GLOBAL

  29. Secondary ion emission from leucine and isoleucine under argon gas-cluster ion bombardment 査読有り

    Hubert Gnaser, Masakazu Kusakari, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   34 巻 ( 3 )   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:A V S AMER INST PHYSICS  

    The emission of sputtered ions from isoleucine and leucine specimens under bombardment by 10 keV argon gas-cluster ions Ar-1000(+) was investigated by orthogonal time-of-flight secondary ion mass spectrometry, in an attempt to examine the possibility of discriminating these amino acids by means of specific differences in their mass spectra. Apart from of the protonated molecular ions (M+H)(+) a prolific flux of singly charged and doubly charged molecular cluster ions, (M-n+H)(+) (1 &lt;= n &lt;= 15) and (M-n+2H)(2+) (8 &lt;= n &lt;= 29) was observed. The distributions of the cluster yields Y-n as a function of their size n were found to be very similar for both amino acids. In addition, the fraction of emitted fragment and other ion species is typically low, and no distinct differences were detected for isoleucine and leucine. Therefore, the present data seem to indicate that a discrimination of isoleucine and leucine via mass spectrometric means is not possible. (C) 2016 American Vacuum Society.

    DOI: 10.1116/1.4939497

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  30. Observation of Liquid Water with Ambient SIMS

    Kusakari M., Fujii M., Seki T., Aoki T., Matsuo J.

    Transactions of the Materials Research Society of Japan   41 巻 ( 3 ) 頁: 309 - 311   2016年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本MRS  

    <p>  Secondary ion mass spectrometry (SIMS) is powerful method for obtaining component information from solid samples, such as semiconductor devices and biological tissue. Moreover, SIMS has high surface sensitivity because of the use of a primary ion probe. The keV-energy ion probe is, however, unstable under low vacuum conditions and this makes evaluation of volatile liquid samples difficult. A new SIMS technique that uses an MeV-energy heavy ion probe, called ambient SIMS, enables measuring volatile liquid samples under ambient conditions by high transmission capability of the primary probe. In this study, water in liquid form, which has a relatively high vapor pressure (2,339 Pa at 20℃), was evaluated by ambient SIMS and gave some cluster ions with high intensity. This result suggests that ambient SIMS has significant potential for evaluating both solid and liquid samples with high sensitivity.</p>

    DOI: 10.14723/tmrsj.41.309

  31. Ambient analysis of liquid materials with Wet-SIMS 査読有り

    Toshio Seki, Masakazu Kusakari, Makiko Fujii, Takaaki Aoki, Takaaki Aoki, Jiro Matsuo

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   371 巻   頁: 189 - 193   2016年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    © 2015 Elsevier B.V. All rights reserved.Secondary ion mass spectrometry (SIMS) is a method with high surface sensitivity that allows both elemental and molecular analysis. However, volatile liquid (wet) samples are difficult to measure using conventional SIMS, because samples must be dried and introduced into a high vacuum chamber. The mean free path of ions with energy in the keV range is very short in low vacuum and these ions cannot penetrate the surface. In contrast, ions in the MeV-energy range have high transmission capability in low vacuum and wet samples can be measured using heavy ions without dry sample preparation. Ion beams in the MeV-energy range also excite electrons near the surface and enhance the ionization of high-mass molecules and thus fragment-suppressed SIMS spectra of ionized molecules can be obtained. We have developed an ambient analysis system with secondary ion mass spectrometry for wet samples (Wet-SIMS) that operates from low vacuum to 30 kPa using MeV-energy heavy ion beams. The system is equipped with fine apertures that avoid vacuum degradation at both the primary beam incidence and the secondary ion measurement sides, even when the target chamber is filled with He gas at 30 kPa. Water evaporation was suppressed in a He atmosphere of 16.5 kPa and a solution of benzoic acid could be measured using MeV-energy heavy ions.

    DOI: 10.1016/j.nimb.2015.09.046

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  32. Development of Low-vacuum SIMS instruments with large cluster Ion beam 査読有り

    Suzuki K, Kusakari M, Fujii M, Seki T, Aoki T, Matsuo J

    Surface and Interface Analysis   48 巻 ( 11 ) 頁: 1121 - 1121   2016年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Large cluster ions such as Arn+ (n > 1000) are expected to have a better transmission factor than monomer ions or other small cluster ions because of their large mass, and thus they might be used as a probe in secondary ion mass spectrometry measurements even at low vacuum pressure. In this study, we examined the transmission and sputtering properties of Ar gas cluster ion beam under low vacuum. Current images of a Ni mesh (400 line/inch) obtained with varying target chamber pressure under low vacuum (<50 Pa) indicated that cluster ions could reach the target without wide divergence. Furthermore, it was demonstrated that cluster ions could sputter organic samples even at 80 Pa. Although the sputtering efficiency decreased by two orders of magnitude at 80 Pa, beam focusing (~20 µm) was achieved with a beam current of 4 nA, that is, one or two orders of magnitude higher than the conventional Ar gas cluster ion beam source. From these results, we concluded that low-vacuum secondary ion mass spectrometry measurements (<80 Pa) might be achievable. Copyright © 2016 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.6121

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  33. Development of ambient SIMS using mega-electron-volt-energy ion probe 査読有り

    Kusakari Masakazu, Fujii Makiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   34 巻 ( 3 )   2016年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.4941724

    Web of Science

  34. Development of ambient SIMS using mega-electron-volt-energy ion probe 査読有り

    Masakazu Kusakari, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena   34 巻 ( 3 )   2016年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.4941724

    Web of Science

  35. Secondary ion emission from leucine and isoleucine under argon gas-cluster ion bombardment 査読有り

    Gnaser Hubert, Kusakari Masakazu, Fujii Makiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   34 巻 ( 3 )   2016年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.4939497

    Web of Science

  36. Secondary ion emission from leucine and isoleucine under argon gas-cluster ion bombardment 査読有り

    Hubert Gnaser, Hubert Gnaser, Masakazu Kusakari, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   34 巻 ( 3 ) 頁: 5   2016年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    © 2016 American Vacuum Society.The emission of sputtered ions from isoleucine and leucine specimens under bombardment by 10 keV argon gas-cluster ions Ar 1000 + was investigated by orthogonal time-of-flight secondary ion mass spectrometry, in an attempt to examine the possibility of discriminating these amino acids by means of specific differences in their mass spectra. Apart from of the protonated molecular ions (M+H)+ a prolific flux of singly charged and doubly charged molecular cluster ions, (Mn+H)+ (1 ≤ n ≤ 15) and (Mn+2H)2+ (8 ≤ n ≤ 29) was observed. The distributions of the cluster yields Yn as a function of their size n were found to be very similar for both amino acids. In addition, the fraction of emitted fragment and other ion species is typically low, and no distinct differences were detected for isoleucine and leucine. Therefore, the present data seem to indicate that a discrimination of isoleucine and leucine via mass spectrometric means is not possible.

    DOI: 10.1116/1.4939497

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    J-GLOBAL

  37. Yields and images of secondary ions from organic materials by different primary Bi ions in time-of-flight secondary ion mass spectrometry 査読有り

    Rie Shishido, Makiko Fujii, Toshio Seki, Takaaki Aoki, Jiro Matsuo, Shigeru Suzuki

    Rapid Communications in Mass Spectrometry   30 巻 ( 4 ) 頁: 476 - 482   2016年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Rapid Communications in Mass Spectrometry  

    © 2016 John Wiley &amp; Sons, Ltd.Rationale Bi cluster ions are used as a source of primary ions for time-of-flight secondary ion mass spectrometry (TOF-SIMS), and it has been recognized that secondary ion yields of macromolecules are higher with Bi cluster ions than with monomer ions or other cluster ions such as Cs+, Ga+ and Aun+. However, the analysis conditions of Bi cluster TOF-SIMS are not sufficiently established. This study provides information on the secondary ion yields, damage cross-section and spatial resolution obtained with different primary Bi ions. Methods We investigated the secondary ion yields, damage cross-section and spatial resolution using three different primary Bi ions in TOF-SIMS. The primary ions selected were Bi1+, Bi3+ and Bi32+ that were accelerated with 25 kV and the positively charged secondary ions were analyzed. The samples were 1, 2-distearoyl-sn-glycero-3-phosphocholine (C44H88NO8P, DSPC), which is a typical lipid, and N,N&#039;-di(1-naphthyl)-N,N&#039;-diphenylbenzidine (C44H32N2, NPD) and 4,4&#039;,4&quot;-tris[2-naphthyl(phenyl)amino]triphenylamine (C66H48N4, 2-TNATA), which are organic functional materials. Results Although the secondary ion yields of DSPC were highest when measured with Bi3+, the spatial resolution obtained from all DSPC analyses could not be evaluated because of the low intensity of the secondary molecular ions. On the other hand, for both NPD and 2-TNATA, the secondary ion yields were highest when imaged with Bi32+. Also, we obtained the highest spatial resolution using Bi32+. In the analysis of all molecules, the damage cross-section obtained with Bi32+ was also the highest. Conclusions When secondary ions were sensitively detected, images of the high spatial resolution were obtained by using Bi32+. On the other hand, when the secondary ion sensitivity was low, the spatial resolution depended on the yields of secondary ions, implying that the selection of the primary ion species is crucial for SIMS analysis of large molecules.

    DOI: 10.1002/rcm.7455

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  38. クラスタービーム技術の新展開 査読有り

    松尾 二郎, 藤井 麻樹子, 瀬木 利夫, 青木 学聡

    精密工学会誌   82 巻 ( 4 ) 頁: 309 - 314   2016年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:精密工学会  

    DOI: 10.2493/jjspe.82.309

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    その他リンク: http://orcid.org/0000-0002-5926-4903

  39. クラスターイオンビーム技術の最近の進展&mdash;ナノ加工からバイオ材料評価まで&mdash;

    松尾 二郎, 藤井 麻樹子, 瀬木 利夫, 青木 学聡

    Journal of the Vacuum Society of Japan   59 巻 ( 5 ) 頁: 113 - 120   2016年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本真空学会  

    &amp;emsp;Recent progress of cluster ion beam was overviewed. Various applications, such as nano-fabrication and biological material analysis, have been developed by using cluster effects, which are due to high-density and multiple collision between cluster ion and surface. Control of size and energy of cluster beam is essential. High speed etching with high anisotropy is realized with neutral cluster beam, which has very low energy/atom. Both molecular depth profiling of organic multilayer and high resolution molecular imaging were demonstrated by using cluster ions. These new XPS and SIMS techniques provide new opportunities for polymer, molecular electronics, biological materials and life science.&lt;br&gt;

    DOI: 10.3131/jvsj2.59.113

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  40. Molecular cluster emission in sputtering of amino acids by argon gas-cluster ions

    Kusakari Masakazu, Gnaser Hubert, Fujii Makiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    INTERNATIONAL JOURNAL OF MASS SPECTROMETRY   383 巻 ( 1 ) 頁: 31 - 37   2015年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:International Journal of Mass Spectrometry  

    Ten pure amino acid specimens (alanine, arginine, asparagine, glutamine, glutamic acid, isoleucine, leucine, phenylalanine, threonine, and tyrosine) and three binary mixtures (phenylalanine/tyrosine, phenylalanine/arginine, and arginine/tyrosine) were bombarded by 10 keV argon gas-cluster ions Ar1000+ and the sputter-induced emission of positive secondary ions was investigated by orthogonal time-offlight secondary ion mass spectrometry (TOF-SIMS). A prolific flux of protonated molecular cluster ions (Mn+H)+ was observed, with up to n = 22 for alanine. In most cases, the cluster yields Yn were found to follow an overall exponential decay with cluster size n, Yn ∝ exp(-βn), although a non-monotonous decrease was found for some clusters. The parameter β varies between ∼0.2 and ∼0.65 for the different amino acids; it seems to scale inversely with the respective sputtering yields of the materials. Generally, the yields of dimers relative to monomers are surprisingly high, amounting to 20-170% whereas those of trimers and tetramers are in the range of 10-90%. In amino acid samples with an (unintentionally) enhanced Na content, Na-cationized cluster (Mn+Na)+ were found in addition to (Mn+H)+. For both molecular cluster species the yields exhibit a very similar dependence on the cluster size n. From the binary mixtures, the emission of both homo- and heteromolecular clusters was observed; their size distributions seem to indicate that the two components were not homogeneously distributed within the samples.

    DOI: 10.1016/j.ijms.2015.04.003

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  41. Progress and applications of cluster ion beam technology 査読有り

    Yamada I., Matsuo J., Toyoda N., Aoki T., Seki T.

    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE   19 巻 ( 1 ) 頁: 12 - 18   2015年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Current Opinion in Solid State and Materials Science  

    Cluster ion beam processing has been extensively developed during the 25 years since the concept originated. Low energy surface interaction effects, lateral sputtering phenomena and high-rate chemical reaction effects have been explored experimentally and have been explained by means of molecular dynamics (MD) modeling. Practical production equipment for a wide range of applications has also been successfully developed. The technology is now advancing rapidly in the fields of sub-nanoscale processing of metals, semiconductors and insulating materials. This paper reviews important events which have taken place during the development with emphasis placed on emerging new advances which have occurred during several recent years.

    DOI: 10.1016/j.cossms.2014.11.002

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  42. クラスターSIMS法を用いた生体試料分析の現状と課題

    藤井 麻樹子, 瀬木 利夫, 青木 学聡, 松尾 二郎

    表面科学学術講演会要旨集   35 巻 ( 0 )   2015年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    近年、クラスターSIMS法を用いた有機材料分析が盛んに行われている。しかしながら、一般に複雑な組成や構造を持つ生体試料に対しては、その高精細な分析は未だ困難である。我々の研究グループでは、独自に作製した種々の有機モデル試料を用いて、クラスターSIMS法を用いた生体試料分析における質量分解能、空間分解能、検出限界や定量性に関する評価を行った。本発表では現在の課題と将来展望に関する議論を行う。

    DOI: 10.14886/sssj2008.35.0_346

  43. クラスターSIMS法による生体分子の高空間分解能イメージング

    松尾 二郎, 鈴木 敢士, 草刈 将一, 藤井 麻樹子, 青木 学聡, 瀬木 利夫

    表面科学学術講演会要旨集   35 巻 ( 0 )   2015年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    脂肪酸や脂質分子は、細胞膜の主要構成分子だけでなく様々なシグナル伝達物質としての役目も負っている興味深い分子である。クラスターSIMS法では多数の脂質分子イオンを同時に高感度に検出でき、その分布を可視化する分子イメージングできるという利点がある。脂質分子の高感度検出とその分子イメージングへの応用について、実サンプルの評価結果交えて議論する。

    DOI: 10.14886/sssj2008.35.0_347

  44. BiクラスターTOF-SIMSによる有機材料のイメージング分析に関する研究

    宍戸 理恵, 藤井 麻樹子, 瀬木 利夫, 青木 学聡, 松尾 二郎, 鈴木 茂

    表面科学学術講演会要旨集   35 巻 ( 0 )   2015年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    一次イオンにクラスターを用いたStaticタイプのSIMSが市販化されるようになると、分析の対象が無機材料から生体材料、ポリマー材料などのソフトマテリアルへと広がった。更に、LMIGを用いた電界放射でのイオン化により、高輝度なイオンビーム照射が実現し、高空間分解能でのイメージング分析が可能になってきた。本発表では、一次イオンにBiクラスターを採用したTOF-SIMSを用いて、一次イオン種がイメージ分解能に与える影響について議論する。

    DOI: 10.14886/sssj2008.35.0_245

  45. Analysis of liquid materials in low vacuum with Wet-SIMS 査読有り

    Seki Toshio, Fujii Makiko, Kusakari Masakazu, Nakagawa Shunichiro, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   46 巻 ( 12-13 ) 頁: 1133 - 1136   2014年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    In conventional SIMS with keV-energy ion beams, elastic collisions occur between projectiles and atoms in the constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. Volatile liquid samples (wet samples) are also difficult to measure using conventional SIMS because samples must be dried first and then introduced into the high-vacuum chamber. In contrast, ion beams with MeV-energy excite electrons near the surface and enhance the ionization of high-mass molecules; hence, a fragment-suppressed SIMS spectrum of ionized molecules can be obtained. We developed a SIMS analysis system for wet samples (Wet-SIMS) that works under low-vacuum pressures up to 1000 Pa using heavy MeV-energy ion beams. The evaporation of heptanoic acid was suppressed under the low-vacuum pressure of 1000 Pa, and the wet samples, which included volatile materials with different vapor pressures, could be measured using heavy MeV-energy ions.

    DOI: 10.1002/sia.5528

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  46. Quantitative analysis of lipids with argon gas cluster ion beam secondary ion mass spectrometry

    Fujii Makiko, Nakagawa Shunichirou, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   46 巻 ( 12-13 ) 頁: 1129 - 1132   2014年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Ar gas cluster ion beam (Ar-GCIB) SIMS has been developed as one of the powerful tools used for analyzing organic materials because of the high secondary ion yield of large organic molecules due to 'soft' sputtering mechanism of this technique. However, for practical analysis of complex biological samples, high quantitative accuracy is strongly required besides high sensitivity. In this study, some pure and compound lipid samples were measured with our originally equipped Ar-GCIB SIMS apparatus with the aim of determining the quantitative accuracy of this technique. It was found that the detection limit of the Ar-GCIB SIMS apparatus was lower than 0.1%. In addition, there was almost no matrix effect between the organic substances of similar chemical structures.

    DOI: 10.1002/sia.5518

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  47. Lipid compounds analysis with MeV-SIMS apparatus for biological applications

    Fujii Makiko, Kusakari Masakazu, Matsuda Kazuhiro, Man Naoki, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   46 巻 ( S1 ) 頁: 353 - 356   2014年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Secondary ion mass spectrometry (SIMS) is one of the powerful methods that can be applied to high sensitivity mass analysis and high-spatial resolution mass imaging. For the analysis of minor components of the complex biological samples, however, superior sensitivity with low background is required. We have developed an MeV-SIMS apparatus with distinctively high secondary ion yield for large organic molecules. In this study, the detection limit of our original MeV-SIMS apparatus was investigated using compounds of two lipids. In the acquired mass spectra, the molecular ions of both lipids were clearly observed with high quantitativity. In addition, the results were compared with conventional time-of-flight-SIMS results. As a result, the detection limit of MeV-SIMS apparatus was found to be below 0.1% and was much lower than that of the conventional Bi cluster SIMS.

    DOI: 10.1002/sia.5524

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  48. Biomaterial imaging with MeV-energy heavy ion beams 査読有り

    Seki Toshio, Wakamatsu Yoshinobu, Nakagawa Shunichiro, Aoki Takaaki, Ishihara Akihiko, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   332 巻   頁: 326 - 329   2014年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The spatial distribution of several chemical compounds in biological tissues and cells can be obtained with mass spectrometry imaging (MSI). In conventional secondary ion mass spectrometry (SIMS) with keV-energy ion beams, elastic collisions occur between projectiles and atoms of constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. In contrast, ion beams with MeV-energy excite near-surface electrons and enhance the ionization of high-mass molecules; hence, SIMS spectra of fragment-suppressed ionized molecules can be obtained with MeV-SIMS. To compare between MeV and conventional SIMS, we used the two methods based on MeV and Bi3-keV ions, respectively, to obtain molecular images of rat cerebellum. Conventional SIMS images of m/z 184 were clearly observed, but with the Bi3 ion, the distribution of the molecule with m/z 772.5 could be observed with much difficulty. This effect was attributed to the low secondary ion yields and we could not get many signal counts with keV-energy beam. On the other hand, intact molecular ion distributions of lipids were clearly observed with MeV-SIMS, although the mass of all lipid molecules was higher than 500 Da. The peaks of intact molecular ions in MeV-SIMS spectra allowed us to assign the mass. The high secondary ion sensitivity with MeV-energy heavy ions is very useful in biomaterial analysis. © 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2014.02.088

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  49. Novel SIMS system with focused massive cluster ion source for mass imaging spectrometry with high lateral resolution 査読有り

    Matsuo Jiro, Torii Souta, Yamauchi Kazuki, Wakamoto Keisuke, Kusakari Masakazu, Nakagawa Shunichiro, Fujii Makiko, Aoki Takaaki, Seki Toshio

    APPLIED PHYSICS EXPRESS   7 巻 ( 5 ) 頁: 1 - 56602   2014年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    Recent developments in cluster ion beams for secondary ion mass spectrometry (SIMS) have enabled the realization of molecular depth profiling and mass imaging of organic and biological materials. Massive Ar cluster beams present reduced surface damage and fragmented ion generation and are suitable as primary beams for SIMS. We recently obtained a finely focused massive 1.2-μm-diameter cluster ion beam and combined it with an orthogonal acceleration time-of-flight mass spectrometer. A mesh pattern of a phospholipid thin film was clearly reproduced in the mass images of molecular ions with a measurement time of 100 s. © 2014 The Japan Society of Applied Physics.

    DOI: 10.7567/APEX.7.056602

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    J-GLOBAL

  50. Study on the detection limits of a new argon gas cluster ion beam secondary ion mass spectrometry apparatus using lipid compound samples 査読有り

    Fujii Makiko, Nakagawa Shunichirou, Matsuda Kazuhiro, Man Naoki, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    RAPID COMMUNICATIONS IN MASS SPECTROMETRY   28 巻 ( 8 ) 頁: 917 - 920   2014年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Rapid Communications in Mass Spectrometry  

    RATIONALE Ar gas cluster ion beam secondary ion mass spectrometry (Ar-GCIB SIMS) has been developed as one of the most powerful tools used for analyzing complex biological materials because of its distinctively high secondary ion yield of large organic molecules. However, for the practical analysis of minor components in complex biological materials, the sensitivity of the technique is still insufficient. METHODS The detection limits of our original Ar-GCIB SIMS apparatus were investigated by measuring lipid compound samples in positive ion mode. The samples were mixtures of 1,2-distearoyl-sn-glycero-3-phosphocholine (C44H88NO8P, DSPC) and 1,2-dipalmitoyl-sn- glycero-3-phosphocholine (C40H80NO8P, DPPC). The primary ions were accelerated with 10 keV and the mean cluster size was 1500. The secondary [M+H]+ ions emitted from the sample were analyzed using an orthogonal acceleration time-of-flight mass spectrometer (oa-TOF-MS). In addition, the isotope abundance ratio and the ratio of the [M+H]+ ion signal to the fragment ion signal acquired with Ar-GCIB SIMS were compared with those obtained with conventional Bi cluster SIMS. RESULTS Secondary [M+H]+ ions and some characteristic fragment ions were clearly observed with high quantitative accuracy in the mass spectra acquired with Ar-GCIB SIMS. The results were clearly better than those obtained with conventional Bi cluster SIMS. CONCLUSIONS The detection limit of Ar-GCIB SIMS was found to be below 0.1% and was much lower than that of conventional Bi cluster SIMS because of the high [M+H]+ ion yield and the low background. The results suggested that the new Ar-GCIB SIMS apparatus has the capability to acquire valuable information on complex biological materials. Copyright © 2014 John Wiley & Sons, Ltd. Copyright © 2014 John Wiley & Sons, Ltd.

    DOI: 10.1002/rcm.6867

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    PubMed

  51. Molecular dynamics simulations of cluster impacts on solid targets: implantation, surface modification, and sputtering 査読有り

    Aoki Takaaki

    JOURNAL OF COMPUTATIONAL ELECTRONICS   13 巻 ( 1 ) 頁: 108 - 121   2014年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Computational Electronics  

    The collisions of cluster projectiles on solid targets were studied using molecular dynamics (MD) simulations. The penetration range and damage induced by small boron and carbon cluster implantations are compared with those induced by monomers with the same energy per atom. The simulations indicated enhanced penetration depth and the formation of dense track damage at the surface region. In addition, large argon and fluorine clusters (up to 1 million atoms) have shown effects such as crater formation and low-damage surface etching of silicon. The MD simulations revealed that cluster penetration and crater formation depends not on the total incident energy, but on the incident energy per atom, and that the damage threshold for the argon cluster is several eV/atom. In the impact of a very large and slow fluorine cluster on silicon, an enhancement of chemical reactivity at the near surface region was observed because of the high density of fluorine molecules depositing kinetic energy. © 2013 Springer Science+Business Media New York.

    DOI: 10.1007/s10825-013-0504-5

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    その他リンク: http://orcid.org/0000-0002-5926-4903

  52. Prolific cluster emission in sputtering of phenylalanine by argon-cluster ion bombardment 査読有り

    Gnaser Hubert, Fujii Makiko, Nakagawa Shunichirou, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    INTERNATIONAL JOURNAL OF MASS SPECTROMETRY   360 巻 ( 1 ) 頁: 54 - 57   2014年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:International Journal of Mass Spectrometry  

    Large Arn+ cluster ions (with n ∼ 1500 Ar atoms per cluster) with a bombarding energy of 10 keV were used to investigate the sputter-induced emission of positive secondary ions from a phenylalanine specimen by orthogonal time-of-flight SIMS. An abundant flux of phenylalanine cluster ions (Mn+H)+ with n ≤ 12 was observed. The yield of dimers relative to monomers is found to amount to 50 - 60% whereas that of trimers and tetramers is roughly 10%. Tentatively, this prolific formation of these cluster species can then be ascribed to the concerted action of the large number of Ar atoms within their impact zone at the surface: these low-energy Ar species (with an average energy of only few eV) may effect the soft cleavage of the phenylalanine bonds in the solid and lead, eventually, to the intact emission of these phenylalanine moieties. © 2014 Elsevier B.V.

    DOI: 10.1016/j.ijms.2013.12.024

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  53. クラスターSIMS法による脂質分子の高感度検出とイメージングへの応用

    藤井 麻樹子, 宍戸 理恵, 鳥居 聡太, 中川 駿一郎, 瀬木 利夫, 青木 学聡, 鈴木 茂, 松尾 二郎

    表面科学   35 巻 ( 7 ) 頁: 351 - 355   2014年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    In recent years, the analysis of biological samples has been extensively performed in pharmacokinetic and metabolic studies. The use of Secondary Ion Mass Spectrometry (SIMS) with conventional monomer ion beams, such as Ar<sup>+</sup>, Cs<sup>+</sup> or Ga<sup>+</sup>, in biological applications is difficult because of the low secondary ion yield of large organic molecules and the complicated fragment ion signals. The use of cluster ions as primary projectiles in SIMS has spread dramatically in the past decade. Bismuth (Bi) cluster ions are now the most familiarized primary ions in cluster SIMS because of the high convergence property and the high molecular ion yield. Argon gas cluster ion beam (Ar-GCIB) is also one of the most attractive primary projectiles for biological application because of the soft sputtering without damage accumulation. However, our knowledge of detection limit and sensitivity is still insufficient for the practical analysis of complex biological samples with cluster SIMS. In addition, imaging mass spectrometry with high spatial resolution is crucially essential for tissue and cell analysis. In this study, lipid standard samples were measured in order to examine the detection limit and the spatial resolution of our Ar-GCIB SIMS, and the results were compared with those of the commercial Bi cluster SIMS. The results indicated that Ar-GCIB SIMS has a capability to obtain the valuable information in biological analysis, however, the improvement on spatial resolution and sensitivity is still required.

    DOI: 10.1380/jsssj.35.351

  54. Low Vacuum SIMS Measurements of Higher Alcohols with MeV-energy Heavy Ion Beam

    Kusakari Masakazu, Fujii Makiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    Transactions of the Materials Research Society of Japan   39 巻 ( 3 ) 頁: 265 - 268   2014年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:The Materials Research Society of Japan  

    The technique of secondary ion mass spectrometry (SIMS) using an ion beam with MeV-energy has been developed to visualize the spatial distribution of biological tissues and cells with high spatial resolution. In this analytical technique, low vacuum is essential for keeping the samples wet. The effect of evaporation of volatile samples on the SIMS spectra was investigated under vacuum pressures of 50 and 500 Pa by using two higher alcohols, 1-decanol and 1-dodecanol. The results indicated that secondary ions of monomer and multimer species were generated by different phases in the sample. Moreover, the comparison of mass spectra obtained under the vacuum conditions of 50 and 500 Pa separately demonstrated that the secondary ion yields were affected by the gas flow adjusting the vacuum, whereas analysis at lower vacuum conditions allowed obtaining constant secondary ion intensity from volatile samples. The results clearly indicated the advantage of ambient analysis with the MeV-SIMS apparatus.

    DOI: 10.14723/tmrsj.39.265

  55. An electrostatic quadrupole doublet focusing system for MeV heavy ions in MeV-SIMS 査読有り

    Seki T., Shitomoto S., Nakagawa S., Aoki T., Matsuo J.

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   315 巻   頁: 356 - 359   2013年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The importance of imaging mass spectrometry (MS) for visualizing the spatial distribution of molecular species in biological tissues and cells is growing. In conventional SIMS with keV-energy ion beams, elastic collisions occur between projectiles and atoms in constituent molecules. The collisions produce fragments, making acquisition of molecular information difficult. In contrast, MeV-energy ion beams excite electrons near the surface and enhance the ionization of high-mass molecules, hence, fragment suppressed SIMS spectrum of ionized molecules can be obtained. This work is a further step on our previous report on the successful development of a MeV secondary ion mass spectrometry (MeV-SIMS) for biological samples. We have developed an electrostatic quadrupole doublet (EQ doublet) focusing system, made of two separate lenses, Q1 and Q2, to focus the MeV heavy ion beam and reduce measurement time. A primary beam of 6 MeV Cu4+ was focused with this EQ doublet. We applied 1120 V to the Q1 lens and 1430 V to the Q2 lens, and the current density increased by a factor of about 60. Using this arrangement, we obtained an MeV-SIMS image of 100 x 100 pixels of cholesterol-OH+ of cerebellum (m/z = 369.3) over a 4 mm x 4 mm field of view, with a pixel size of 40 μm within 5 min, showing that our EQ doublet reduces the measurement time of current imaging by a factor of about 30. © 2013 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2013.05.069

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  56. Ultrafine particle removal using gas cluster ion beam technology 査読有り

    Dobashi K.

    IEEE Transactions on Semiconductor Manufacturing   26 巻 ( 3 ) 頁: 328 - 334   2013年8月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE Transactions on Semiconductor Manufacturing  

    DOI: 10.1109/TSM.2013.2268871

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  57. Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology 査読有り

    Dobashi Kazuya, Inai Kensuke, Saito Misako, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING   26 巻 ( 3 ) 頁: 328 - 334   2013年8月

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TSM.2013.2268871

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  58. Molecular dynamics simulation study of damage formation and sputtering with huge fluorine cluster impact on silicon 査読有り

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   303 巻   頁: 170 - 173   2013年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Damage formation and sputtering processes by large reactive cluster impact on solid target were studied by molecular dynamics (MD) simulation. A (F 2)500,000 cluster was accelerated at 1 MeV (1 eV/atom, 3.2 km/s) and projected toward a Si(100) target which consisted of more than 130,000,000 atoms. The MD simulation result showed that wide and shallow crater is formed due to the impingement of the bottom part of the incident cluster. The target atoms in a large area surrounding the impact point were largely displaced and some of them remained as a point defect or as a stacking fault, which reached more than 10 nm deep into the target surface. By the single impact of the cluster, about 12,000 silicon atoms were desorbed into the vacuum. The desorbed products were in the form of not only mono-silicon fluoride but also in larger silicon-fluoride composite clusters. The distribution of initial position of desorbed silicon atoms showed that most of desorbed products were generated in the region close to the crater edge corresponding to the radius of incident cluster. © 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2012.10.040

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    その他リンク: http://orcid.org/0000-0002-5926-4903

  59. Development of gas cluster ion beam irradiation system with an orthogonal acceleration TOF instrument 査読有り

    Ichiki K., Tamura J., Seki T., Aoki T., Matsuo J.

    SURFACE AND INTERFACE ANALYSIS   45 巻 ( 1 ) 頁: 522 - 524   2013年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Surface damage induced on biomolecules with gas cluster ion beam (GCIB) irradiation is significantly lower than with atomic or small cluster ion beams, and for this reason, surface analysis techniques such as secondary ion mass spectrometry (SIMS) have become one of the most important applications of GCIB, particularly for microscale chemical imaging of biomolecular species. Because of the low duty-cycle in time-of-flight (TOF)-SIMS, only less than 0.1 % of the incident ion beam is used for analysis, meaning that analysis with high spatial resolution can practically be extremely lengthy. The duty cycle can be significantly improved with the orthogonal acceleration (oa) TOF method because with this method secondary ion mass spectra can be measured at high mass resolution without requiring a pulsed primary ion beam. In this study, we developed a gas cluster ion irradiation system mounted on an oa-TOF instrument and investigated the sputtering yield and secondary ion yield of arginine. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.5092

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  60. Ion-induced damage evaluation with Ar cluster ion beams 査読有り

    Yamamoto Yasuyuki, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   45 巻 ( 1 ) 頁: 167 - 170   2013年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Ion-induced damage on organic materials has been evaluated with secondary ion mass spectrometry. However, conventional sputtering beams such as SF 5+ and C60+ cannot etch organic materials without inducing damage, and evaluating the damage depth distribution in these materials is difficult. Large gas cluster ions can etch organic materials without damage, and in this study, the damaged layer thickness was evaluated by molecular depth profiling with Ar cluster ion beam. The characteristic molecular ions were not detected in the spectra after etching with Ar monomer beam, indicating that the chemical structures of phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) were seriously damaged. The intensity of the fullerene molecular ion reached a peak at the depth of about 35 nm. For PS, the peak intensity of m/z 91 increased with sputtering depth and saturated at about 45 nm. These values agreed with the projection range of Ar+ in PCBM and PS, respectively. These results indicate that the ion-induced damage depth was the same as the projection range of its ion. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.5014

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    その他リンク: http://orcid.org/0000-0002-5926-4903

  61. クラスターSIMS法による脂質分子の高感度検出とイメージングへの応用

    松尾 二郎, 中川 俊一郎, 鳥居 聡太, 藤井 麻樹子, 瀬木 利夫, 青木 学聡

    表面科学学術講演会要旨集   33 巻 ( 0 )   2013年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    <br>脂肪酸や脂質分子は、細胞膜の主要構成分子だけでなく様々なシグナル伝達物質としての役目も負っている興味深い分子である。クラスターSIMS法では多数の脂質分子イオンを同時に高感度に検出でき、その分布を可視化する分子イメージングできるという利点がある。脂質分子の高感度検出とその分子イメージングへの応用について、実サンプルの評価結果交えて議論する。

    DOI: 10.14886/sssj2008.33.0_18

  62. Peptide dissociation patterns in secondary ion mass spectrometry under large argon cluster ion bombardment 査読有り

    Gnaser Hubert, Fujii Makiko, Nakagawa Shunichirou, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    RAPID COMMUNICATIONS IN MASS SPECTROMETRY   27 巻 ( 13 ) 頁: 1490 - 1496   2013年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Rapid Communications in Mass Spectrometry  

    RATIONALE The analysis of organic and biological substances by secondary ion mass spectrometry (SIMS) has greatly benefited from the use of cluster ions as primary bombarding species. Thereby, depth profiling and three-dimensional (3D) imaging of such systems became feasible. Large Arn+ cluster ions may constitute a further improvement in this direction. METHODS To explore this option, large Arn+ cluster ions (with n ~1500 Ar atoms per cluster) were used to investigate the emission of positive secondary ions from two peptide specimens (angiotensin I and bradykinin) by orthogonal time-of-flight SIMS using bombarding energies 6, 10 and 14 keV. RESULTS For both peptides, the protonated molecular ion is observed in the mass spectra. In addition, distinct fragmentation patterns were observed; these indicate that fragment ions under Ar cluster irradiation form primarily via cleavage of bonds along the peptide backbone whereas the rapture of side chains occurs much less frequently. These features appear to be similar to low-energy collision-induced dissociation pathways. CONCLUSIONS Tentatively, these findings can then be ascribed to the concerted action of the large number of Ar atoms in the impact zone of cluster at the surface: these low-energy Ar species (with an average energy of few eV) may effect the cleavage of the peptide bonds and lead, eventually, to the emission of the fragment ions. Copyright © 2013 John Wiley & Sons, Ltd. Copyright © 2013 John Wiley & Sons, Ltd.

    DOI: 10.1002/rcm.6599

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    PubMed

    その他リンク: http://orcid.org/0000-0002-5926-4903

  63. Ultrafine particle removal using gas cluster ion beam technology

    Kazuya Dobashi, Kensuke Inai, Misako Saito, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    IEEE Transactions on Semiconductor Manufacturing   26 巻 ( 3 ) 頁: 328 - 334   2013年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    In this paper, the ultrafine particle removal using CO2 gas cluster ion beam (GCIB) technology is investigated. The CO2 GCIB is irradiated the sample at an angle of 0 with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation. © 1988-2012 IEEE.

    DOI: 10.1109/TSM.2013.2268871

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  64. Ultrafine particle removal using gas cluster ion beam technology 査読有り

    Kazuya Dobashi, Kensuke Inai, Misako Saito, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    IEEE Transactions on Semiconductor Manufacturing   26 巻 ( 3 ) 頁: 328 - 334   2013年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    In this paper, the ultrafine particle removal using CO2 gas cluster ion beam (GCIB) technology is investigated. The CO2 GCIB is irradiated the sample at an angle of 0 with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation. © 1988-2012 IEEE.

    DOI: 10.1109/TSM.2013.2268871

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  65. Molecular dynamics study of crater formation by core-shell structured cluster impact 査読有り

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   282 巻   頁: 29 - 32   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Crater formation processes by the impacts of large clusters with binary atomic species were studied using molecular dynamics (MD) simulations. Argon and xenon atoms are artificially organized in core-shell cluster structures with various component ratios and irradiated on a Si(1 0 0) target surface. When the cluster has Xe 1000 core covered with 1000 Ar atoms, and impacts at a total of 20 keV, the core Xe cluster penetrates into the deep area, and a crater with a conical shape is left on the target. On the other hand, in the case of a cluster with the opposite structure, Ar 1000 core covered with 1000 Xe atoms, the cluster stops at a shallow area of the target. The incident cluster atoms are mixed and tend to spread in a lateral direction, which results in a square shaped crater with a shallower hole and wider opening. The MD simulations suggest that large cluster impacts cause different irradiation effects by changing the structure, even if the component ratio is the same. © 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2011.08.061

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  66. Depth profiling analysis of damaged arginine films with Ar cluster ion beams 査読有り

    Matsuo J., Ichiki K., Yamamoto Y., Seki T., Aoki T.

    SURFACE AND INTERFACE ANALYSIS   44 巻 ( 6 ) 頁: 729 - 731   2012年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Ar cluster ion beams provide unique opportunities for organic material analysis. SIMS with Ar cluster ion beams have been utilized for thin films of biomaterials and organic semiconductor multilayers. No degradation in SIMS spectra was found after sputtering with Ar cluster ion beams. In addition, a damage layer formed with ion irradiation of monomer Ga at a dose of 1×10 14 ions/cm 2 was removed with an Ar cluster beam without additional damage being created. The structure and depth of damage induced with monomer ions can be evaluated with Ar cluster SIMS. The measured thickness of the damaged layer is very close to the value calculated with TRIM. These results indicate that damage in organic materials introduced with energetic ions can be evaluated with this technique. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.4856

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  67. クラスターSIMS法による脂質薄膜の構造評価

    松尾 二郎, 中川 駿一郎, 志戸本 祥, 鳥居 聡太, 瀬木 利夫, 青木 学聡

    表面科学学術講演会要旨集   32 巻 ( 0 )   2012年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    細胞膜などで普遍的にみられる脂質薄膜をクラスターSIMS法で評価した。ソフトなイオン化法であるクラスターSIMS法は、脂質分子を壊すことなくイオン化でき、構造評価に適した手法である。また、ラットの脳切片などへの応用も示す。

    DOI: 10.14886/sssj2008.32.0_262

  68. Etching of metallic materials with Cl-2 gas cluster ion beam 査読有り

    Seki T., Aoki T., Matsuo J.

    SURFACE & COATINGS TECHNOLOGY   206 巻 ( 5 ) 頁: 789 - 791   2011年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Coatings Technology  

    Cluster ion beam processes exhibit high rate sputtering with low damage, and in particular, extremely high sputtering rates are expected using reactive cluster ion beams. Si could be sputtered at extremely high rates using reactive cluster ion beams, such as SF6, Cl2, CF4, CHF3, and CH2F2. However, processing of metallic materials with reactive cluster ion beams has not been studied yet. It was expected that high-speed etching of metallic materials can be realized with Cl2 cluster ion irradiation, because such a beam would reactively sputter these materials. We generated a Cl2 cluster ion beam and investigated the etching characteristics of various metallic materials, such as Ni and Al films, under this irradiation. The size of the Cl2 cluster, as measured with a time-of-flight (TOF) system, was about 1400 molecules. The sputtering yield for each metal was more than 10 times higher than that obtained with Ar cluster ions, showing that Cl2 cluster ion irradiation reactively sputtered the metallic materials. These results indicated that Cl2 cluster ion irradiation was suitable for high-speed processing of metallic materials. © 2011 Elsevier B.V.

    DOI: 10.1016/j.surfcoat.2011.04.054

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  69. Low-damage milling of an amino acid thin film with cluster ion beam 査読有り

    Hada Masaki, Ibuki Sachi, Hontani Yusaku, Yamamoto Yasuyuki, Ichiki Kazuya, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    JOURNAL OF APPLIED PHYSICS   110 巻 ( 9 )   2011年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Applied Physics  

    In this work, we characterized the surface damage layer and sputtering yield of polycrystalline L-leucine films before and after irradiation with Ar cluster or monomer ion beams with x ray photoelectron spectroscopy and ellipsometry. Irradiation with Ar monomer ion beams induced heavy damage on the surface of L-leucine films, such as bond breaking and carbonization. In contrast, no significant surface damage was observed in the films irradiated with Ar cluster ion beams. The sputtering yield of L-leucine decreased dramatically with increasing fluence of monomer Ar ions and approached the value of the sputtering yield of graphite; but under irradiation with Ar cluster ion beams, the sputtering yield remained constant with fluence. The differences in sputtering yield behavior were explained in relation with the surface damage layer on organic materials. Thus, cluster ion beams could potentially be used to mill down biological materials without significant damage on the surface and could contribute to various applications in the analysis and processing of life matter. © 2011 American Institute of Physics.

    DOI: 10.1063/1.3658220

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  70. Highly sensitive molecular detection with swift heavy ions 査読有り

    Wakamatsu Yoshinobu, Yamada Hideaki, Ninomiya Satoshi, Jones Brian N., Seki Toshio, Aoki Takaaki, Webb Roger, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   269 巻 ( 20 ) 頁: 2251 - 2253   2011年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Various imaging techniques using microbeam have been applied in biology. Secondary ion mass spectrometry (SIMS) is one of the prominent tools for biological imaging; SIMS can provide data on molecular distribution in biological samples smaller than 1 μm. However, conventional SIMS has only low sensitivity for molecular ions; therefore there is a need for beams of more sensitive primary ions. Plasma desorption mass spectrometry (PDMS) is a method using high energy fission fragments from excitation of a 252Cf source, and it allows ionization of large molecules (typically up to 20 kDa) due to the dense electronic excitation. Although PDMS is not in use today because of the development of soft ionization methods, ionization induced by high energy ion collision still remains the only method which combines high spatial resolution and sensitive detection of large molecules. In this work, the secondary ion yield of amino acid and phospholipid was measured for 6 MeV Cu4+. The yields were compared to bismuth cluster ions, which achieve relatively high yield. It was confirmed that the swift heavy ion has a couple of hundred times higher yield for large molecules than bismuth cluster ions.

    DOI: 10.1016/j.nimb.2011.02.069

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  71. The effects of cluster size on sputtering and surface smoothing of PMMA with gas cluster ion beams 査読有り 国際誌

    Kazuya Ichiki, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the Materials Research Society of Japan   36 巻 ( 3 ) 頁: 309 - 312   2011年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:The Materials Research Society of Japan  

    We investigated the sputtering rate and surface morphology of polymethylmethacrylate (PMMA) samples bombarded with Ar cluster ion beam with selected energy of 12.5 eV/atom. The incident cluster energy range was 10–60 keV/ion. The incident cluster ion was selected before irradiation by using the time-of-flight (TOF) method. Both the sputtering rates and the average surface roughness increased rapidly with increasing incident cluster size under bombardment with small cluster ion. Under bombardment with large cluster ion, the average surface roughness does not increase rapidly, although sputtering rates increased nonlinearly. It suggests that a cluster ion beam with large size would be effective for high speed etching without roughing the surface.

    DOI: 10.14723/tmrsj.36.309

  72. Molecular dynamics simulations of large fluorine cluster impact on silicon with supersonic velocity 査読有り

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   269 巻 ( 14 ) 頁: 1582 - 1585   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The etching process by very large reactive gas cluster impact was investigated by molecular dynamics (MD) simulations. Fluorine-molecule clusters with the size up to 100,000 atoms (50,000 F2 molecules) were irradiated on silicon (1 0 0) targets at supersonic velocity regime (0.1-1 eV/atom, 1.0-3.2 km/s). The MD simulations revealed that the existence of threshold energy-per-atom around 0.3 eV/atom (1.75 km/s) to cause surface deformation and enhancement of Si desorption. When the incident energy-per-atom is less than the threshold, the incident cluster breaks up itself on the target without surface deformation. The fluorine molecules in the cluster spread in the lateral direction along the target surface, and some part of them decompose and adsorbs on the target to form silicon fluoride composites. On the other hand, the clusters penetrate the surface of silicon target when the energy-per-atom is larger than 0.3 eV/atom. In these collisional processes, the target surface is deformed to create shallow crater shape. The incident fluorine molecules are preferentially concentrated at the bottom of the crater, which resulted in high desorption yield of silicon as in the form of SiF2, SiF3 and SiF4. © 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2010.12.013

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  73. Analysis of organic semiconductor multilayers with Ar cluster secondary ion mass spectrometry 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Yamada Hideaki, Nakata Yoshihiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   43 巻 ( 1-2 ) 頁: 95 - 98   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    The demand for direct analytical techniques for characterization and damage evaluation of organic devices has increased dramatically in recent years, along with an increase in the importance of these devices. In this study, we demonstrate direct analysis of model structures for organic light emitting diode (OLED) devices by using SIMS with large Ar cluster ion beams. We prepared single and multilayer films of organic semiconductor materials by vacuum evaporation and analyzed their surfaces with time-of-flight secondary ion mass spectrometry (ToF-SIMS). Under bombardment with large Ar cluster ions, the predominant species observed were molecular ions from the organic materials, while small fragment ions were strongly suppressed. Moreover, the multilayer films were depth profiled with Ar cluster ion beams, and the interfaces between the organic layers could be clearly distinguished. These results show the promising potential of large Ar cluster ion beams for direct analysis of real organic semiconductor devices. Copyright © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3587

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  74. MeV-energy probe SIMS imaging of major components in washed and fractured animal cells 査読有り

    Yamada H., Nakata Y., Ninomiya S., Seki T., Aoki T., Tamura J., Matsuo J.

    SURFACE AND INTERFACE ANALYSIS   43 巻 ( 1-2 ) 頁: 363 - 366   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Molecular images of pretreated animal cells were measured by secondary ion mass spectrometry (SIMS) with MeV-energy ion beam. SIMS analysis was performed for cell surfaces washed with buffers not only at high vacuum, but also at several tens Pa by using an orthogonal acceleration time of flight mass spectrometer (oaTOFMS) system. Moreover, molecular images of major components from washed and freeze fractured cells were obtained using MeV-energy probe SIMS. Copyright © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3408

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  75. Surface morphology of PMMA surfaces bombarded with size-selected gas cluster ion beams 査読有り

    Ichiki K., Ninomiya S., Nakata Y., Yamada H., Seki T., Aoki T., Matsuo J.

    SURFACE AND INTERFACE ANALYSIS   43 巻 ( 1-2 ) 頁: 120 - 122   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    The surface morphology and sputtering rate of polymethylmethacrylate (PMMA) samples bombarded with size-selected Ar cluster ion beam (1000-16 000 atoms/cluster) was investigated. The incident cluster ion size was selected before irradiation by using the time-of-flight (TOF) method. The sputtering rates decreased with increasing incident cluster size at constant total energy. The average surface roughness values measured by AFM after 25 nm etching with 20 keV Ar1000+ and Ar16 000+ were 4.0 ± 0.4 and 0.78 ± 0.09 nm, respectively. Thus, small clusters would be effective for high-speed etching, and large clusters would be suitable for low-damage etching. Copyright © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3444

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  76. The effect of incident energy on molecular depth profiling of polymers with large Ar cluster ion beams 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Yamada Hideaki, Nakata Yoshihiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   43 巻 ( 1-2 ) 頁: 221 - 224   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular depth profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS depth profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3656

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  77. Using ellipsometry for the evaluation of surface damage and sputtering yield in organic films with irradiation of argon cluster ion beams 査読有り

    Hada Masaki, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    SURFACE AND INTERFACE ANALYSIS   43 巻 ( 1-2 ) 頁: 84 - 87   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    The film thickness and surface damage layer of vapor-deposited L-leucine amino acid films irradiated with Ar cluster ion beams were characterized by PSCRA ellipsometry. The damaged layer on the surface of the L-leucine film irradiated with Ar cluster ion beam was quite thin, less than 1 nm in thickness. In contrast, films irradiated with Ar monomer ion beam have changed into totally different films. The ellipsometry method also allowed accurate measurements of the sputtering yield from the L-leucine film irradiated with Ar cluster ion beams at nm-order resolution. These results suggested that with proper analysis, the optical method of ellipsometry enables estimation of the surface damage layer and measurement of sputtering yield of organic films irradiated with cluster ion beams. Copyright © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3452

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  78. Evaluation of damage depth on arginine films with molecular depth profiling by Ar cluster ion beam

    Yamamoto Yasuyuki, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    Transactions of the Materials Research Society of Japan   36 巻 ( 3 ) 頁: 313 - 316   2011年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本MRS  

    Ion-induced damage on organic materials has been evaluated with secondary ion mass spectrometry (SIMS). However, conventional sputter beams, such as SF<sub>5</sub><sup>+</sup>, C<sub>60</sub><sup>+</sup> cannot etch the organic materials without inducing damage, and it is difficult to evaluate the depth distribution of the damage in these materials. Large gas cluster ion can etch organic materials without damage, and in this study the damaged layer thickness was evaluated by molecular depth profiling with Ar cluster ion beam. Arginine films were irradiated with 10 keV Ga<sup>+</sup> at a dose of 1.0 × 10<sup>14</sup> ions/cm<sup>2</sup> with the aim of forming a damaged layer on the surface. The chemical structure of arginine was seriously damaged, as indicated by the non-detection of protonated arginine molecular ions after Ga<sup>+</sup> ions irradiation. The peak intensity of the protonated arginine ion increased with increasing sputtering depth and saturated at the depth of about 30 nm. This value agreed with the projection range of the Ga<sup>+</sup> ion indicating that the depth of the ion-induced damage was the same as projection range of the ion. Ion-induced damage layer thickness on arginine films were accurately evaluated by molecular depth profiling with Ar cluster ion beam.

    DOI: 10.14723/tmrsj.36.313

  79. 2次イオン質量分析法(SIMS法)によるバイオイメー ジング

    松尾 二郎, 市木 和弥, 瀬木 利夫, 青木 学聡

    表面科学学術講演会要旨集   31 巻 ( 0 ) 頁: 171 - 171   2011年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    二次イオン質量分析法の持つ高い空間分解能を活かし、培養細胞や生体組織切片への応用を進めており、細胞一個を観察することが可能となっている。最新のSIMS法の生命科学への応用を、我々の研究成果を中心に実例を交えながら紹介し、高分解質量イメージング法としての今後の課題や展望について議論する。

    DOI: 10.14886/sssj2008.31.0.171.0

  80. Anisotropic Etching Using Reactive Cluster Beams

    Koike Kunihiko, Yoshino Yu, Senoo Takehiko, SEKI Toshio, NINOMIYA Satoshi, AOKI Takaaki, MATSUO Jiro

    Applied physics express   3 巻 ( 12 ) 頁: "126501 - 1"-"126501-3"   2010年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

  81. Anisotropic etching using reactive cluster beams

    Koike K.

    Applied Physics Express   3 巻 ( 12 )   2010年12月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Applied Physics Express  

    DOI: 10.1143/APEX.3.126501

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  82. Nano processing with gas cluster ion beams

    Matsuo J.

    Toraibarojisuto/Journal of Japanese Society of Tribologists   55 巻 ( 11 ) 頁: 776 - 782   2010年12月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Toraibarojisuto/Journal of Japanese Society of Tribologists  

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  83. Processing Techniques of Biomaterials: Using Gas Cluster Ion Beam for Imaging Mass Spectrometry 査読有り 国際誌

    H Yamada, K Ichiki, Y Nakata, S Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the Materials Research Society of Japan   35 巻 ( 4 ) 頁: 793 - 796   2010年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本MRS  

    We investigated secondary ion mass spectrometry (SIMS) for cellular imaging with high spatial resolution. Cellular level imaging would require nanoscale processing techniques for removal of contamination from cell surfaces and exposing the inner matter of cells. In this study, we applied gas cluster ion beams to the etching of biological samples. Molecular ions were detected with high-intensity from cholesterol samples etched with Ar cluster ions. Additionally, the intensity of secondary molecular ions with gas cluster ion irradiation was compared to that with Au<sub>3</sub><sup>+</sup> or C<sub>60</sub><sup>+</sup> beam irradiation and we demonstrated the advantage of using gas cluster ions as etching beams for biological samples with low damage. Finally, we performed etching of animal cells with Ar cluster ions and SIMS analysis of the etched cells. We demonstrated that the cell surfaces were etched with low damage by using gas cluster ion beam.

    DOI: 10.14723/tmrsj.35.793

  84. SIMS Depth Profiling of Organic Materials with Ar Cluster Ion Beam 査読有り 国際誌

    Satoshi Ninomiya, Kazuya Ichiki, Hideaki Yamada, Yoshihiko Nakata, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the Materials Research Society of Japan   35 巻 ( 4 ) 頁: 785 - 788   2010年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本MRS  

    Depth profiling has been rarely used with secondary ion mass spectrometry (SIMS) of organic materials, because the primary keV atomic ions produce weak signals for large molecules and often damage them during the etching process. In previous studies, we have found extremely low-damage secondary ion emission from organic materials bombarded with large Ar cluster ions, and proposed to use large gas cluster ions as primary ions for SIMS. In this study, secondary ions were measured with a linear type time-of-flight (TOF) technique, and the application of large Ar cluster ion beams to molecular depth profiling of organic films is demonstrated. The intensities of molecular ions were kept constant, though the primary ion beam fluence exceeded the static SIMS limit. These results indicate that large Ar cluster ion beams could be used as powerful tools for SIMS depth profiling.

    DOI: 10.14723/tmrsj.35.785

  85. Sputtering Properties of Si by Size-Selected Ar Gas Cluster Ion Beam 査読有り 国際誌

    K Ichiki, S Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the Materials Research Society of Japan   35 巻 ( 4 ) 頁: 789 - 792   2010年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本MRS  

    Large gas cluster ion beam technology answers expectations in the field of material modification, because it provides unique capabilities, such as atomic-scale surface smoothing, shallow implantation and high sputtering yield. The relationship between incident cluster size and irradiation effects observed with large gas cluster ion beam is not yet clearly understood, and in this work we used size-selected Ar cluster ion beam to study the effects of incident energy-per-atom and cluster size on sputtering and secondary ion emission. Incident Ar cluster ions were size-selected by using the time-of-flight (TOF) method. It was found that the secondary ion yields decreased more rapidly with decreasing incident energy-per-atom and that the threshold energy-per-atom for sputtering of Si and Si<sup>+</sup> were different, because the ionization energy of Si was higher than the surface binding energy of Si. It indicates that cluster ion irradiation sputtered only neutral Si from the surface by under the specific conditions.

    DOI: 10.14723/tmrsj.35.789

  86. クラスターイオンビーム技術の最近の進展

    松尾 二郎, 瀬木 利夫, 青木 学聡

    表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan   31 巻 ( 11 ) 頁: 564 - 571   2010年11月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:日本表面科学会  

  87. ガスクラスタイオンビームによるナノ加工技術 査読有り 国際誌

    松尾 二郎, 北川 晃幸, 瀬木 利夫, 青木 学聡

    トライボロジスト   55 巻 ( 11 ) 頁: 776 - 782   2010年11月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:日本トライボロジー学会  

  88. SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials 査読有り

    Matsuo Jiro, Ninomiya Satoshi, Yamada Hideaki, Ichiki Kazuya, Wakamatsu Yoshinobu, Hada Masaki, Seki Toshio, Aoki Takaaki

    SURFACE AND INTERFACE ANALYSIS   42 巻 ( 10-11 ) 頁: 1612 - 1615   2010年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Interface Analysis  

    Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular depth profiling and images of organic materials were demonstrated by using SIMS. © 2010 John Wiley & Sons, Ltd.

    DOI: 10.1002/sia.3585

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  89. MeV-energy probe SIMS imaging of major components in animal cells etched using large gas cluster ions 査読有り

    Yamada Hideaki, Ichiki Kazuya, Nakata Yoshihiko, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   268 巻 ( 11-12 ) 頁: 1736 - 1740   2010年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular imaging of animal cells was successfully obtained by using the technique of MeV-energy probe secondary ion mass spectrometry (MeV-SIMS) and sample etching with Ar cluster ion beam. In order to indicate benefits of using Ar cluster beam for etching biomaterials, cholesterol and phospholipids were etched with Ar cluster ions and SIMS measurements for the before and after etching samples were performed. Moreover, secondary ion images of the animal cells etched with Ar cluster ions were acquired by using MeV-energy ion beam as a probe. © 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2010.02.038

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  90. Sputtering yield measurements with size-selected gas cluster ion beams

    Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuol J.

    Materials Research Society Symposium Proceedings   1181 巻   頁: 135 - 140   2010年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium Proceedings  

    Ar cluster ions in the size range 1000-16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams. © 2009 Materials Research Society.

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  91. クラスタイオンビームによる平坦化加工技術

    松尾 二郎, 瀬木 利夫, 二宮 啓, 青木 学聡

    砥粒加工学会誌 = Journal of the Japan Society of Grinding Engineers   54 巻 ( 5 ) 頁: 272 - 275   2010年5月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:砥粒加工学会  

  92. Molecular dynamics simulations for gas cluster ion beam processes 査読有り

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    VACUUM   84 巻 ( 8 ) 頁: 994 - 998   2010年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Vacuum  

    Molecular dynamics (MD) simulations of large argon clusters impacting on silicon targets were performed. The characteristics of crater formation, a typical collisional effect with large cluster impact were examined from the viewpoint of incident energy, cluster size and incident angle. The MD simulation results suggested that the condition where an incident cluster penetrates into the solid target and causes a crater is mainly dominated by the incident energy-per-atom rather than total incident energy of the cluster. Additionally, the MD simulations of sequential multiple cluster impacts and grazing-angle cluster irradiation on irregular surface structures were studied to characterize the surface modification effects with large cluster ion beam process. © 2009 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.vacuum.2009.11.018

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  93. クラスターイオンビーム技術の最近の進展

    松尾 二郎, 瀬木 利夫, 青木 学聡

    表面科学   31 巻 ( 11 ) 頁: 564 - 571   2010年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    A brief overview for recent progress of cluster ion beams is presented in conjunction with atomistic collision dynamics, cluster size effects and nano-process developments. Unique characteristics of cluster ion beam are utilized not only for nano-processing but also metrology for organic materials. Molecular dynamics study on cluster-solid interactions and size dependence of sputtering with Ar or Cl<Sub>2</Sub> cluster ions reveal that both incident energy and chemical potential energy are effectively transfer to the surface to enhance the sputtering yield. In addition to these, less damage was remained on organic surface bombarded with cluster ions. Organic depth profiling of XPS or SIMS are realized with cluster ion beams.

    DOI: 10.1380/jsssj.31.564

  94. ArクラスターSIMSを用いたToF型質量イメージング装置の開発

    山本 恭千, 市木 和弥, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎

    表面科学学術講演会要旨集   30 巻 ( 0 ) 頁: 308 - 308   2010年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    二次イオン質量分析法(SIMS)を用いた質量イメージングは工業や医学への応用が期待されている。しかし、従来の数keVのモノマーイオンを用いたSIMS分析では有機試料の分子構造を破壊してしまうという問題がある。我々は低損傷での照射が可能なクラスターイオンを用いたSIMSについて研究しており、今回の研究ではArクラスターSIMSを用いた高面分解能の質量イメージングを取得するための装置開発を行った。

    DOI: 10.14886/sssj2008.30.0.308.0

  95. Anisotropic Etching Using Reactive Cluster Beams 査読有り

    Koike Kunihiko, Yoshino Yu, Senoo Takehiko, Seki Toshio, Ninomiya Satoshi, Aoki Takaaki, Matsuo Jiro

    APPLIED PHYSICS EXPRESS   3 巻 ( 12 )   2010年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.3.126501

    Web of Science

  96. High speed Si etching with ClF<inf>3</inf> cluster injection

    Seki T., Yoshino Y., Senoo T., Koike K., Ninomiya S., Aoki T., Matsuo J.

    AIP Conference Proceedings   1321 巻   頁: 317 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP Conference Proceedings  

    The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. ClF3-Ar neutral cluster was generated and the Si etching characteristics with this beam were investigated. ClF3 is very high reactive gas. Adiabatic expansion of a high-pressure gas through a conical nozzle is utilized for the formation of cluster beams. The source gas was a mixture of ClF3 (6%) with Ar (94%). The etching rate increased with source gas pressure nonlinearly, and the etching rate achieved more than 30 μm/min at 0.85 MPa. Although the irradiation energy was very low (<1 eV/atom or molecule), the chemical etching was enhanced with cluster impacts and the cluster bombarded area on the surface was etched selectively. These results indicated that high speed anisotropic etching with low damage can be realized with the ClF3 cluster injection process. © 2010 American Institute of Physics.

    DOI: 10.1063/1.3548393

    Web of Science

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  97. High Speed Si Etching with ClF3 Cluster Injection 査読有り 国際誌

    Seki T., Yoshino Y., Senoo T., Koike K., Ninomiya S., Aoki T., Matsuo J.

    ION IMPLANTATION TECHNOLOGY 2010   1321 巻   頁: 317 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  98. Evaluation of surface damage on organic materials irradiated with Ar cluster ion beam

    Yamamoto Y., Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    AIP Conference Proceedings   1321 巻   頁: 298 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP Conference Proceedings  

    The sputtering yields of organic materials under large cluster ion bombardment are much higher than those under conventional monomer ion bombardment. The sputtering rate of arginine remains constant with fluence for an Ar cluster ion beam, but decreases with fluence for Ar monomer. Additionally, because Ar cluster etching induces little damage, Ar cluster ion can be used to achieve molecular depth profiling of organic materials. In this study, we evaluated the damage to poly methyl methacrylate (PMMA) and arginine samples irradiated with Ar atomic and Ar cluster ion beams. Arginine samples were analyzed by secondary ion mass spectrometry (SIMS) and PMMA samples were analyzed by X-ray photoelectron spectroscopy (XPS). The chemical structure of organic materials remained unchanged after Ar cluster irradiation, but was seriously damaged. These results indicated that bombardment with Ar cluster ions induced less surface damage than bombardment with Ar atomic ion. The damage layer thickness with 5 keV Ar cluster ion bombardment was less than 1 nm. © 2010 American Institute of Physics.

    DOI: 10.1063/1.3548386

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  99. Evaluation of surface damage on organic materials irradiated with Ar cluster ion beam 査読有り 国際誌

    Yamamoto Y., Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    ION IMPLANTATION TECHNOLOGY 2010   1321 巻   頁: 298 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  100. Evaluation of surface damage of organic films due to irradiation with energetic ion beams

    Hada M., Hontani Y., Ibuki S., Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    AIP Conference Proceedings   1321 巻   頁: 314 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP Conference Proceedings  

    The surface of L-leucine films irradiated with an Ar5000 cluster ion beam (5 keV) was characterized by using the X-ray reflective (XRR) measurement method, atomic force microscopy (AFM) and ellipsometry. No significant damage was detected on the surface of the L-leucine films irradiated with the Ar cluster ion beam. Therefore, the large cluster-low-energy (about 1 eV/atom) beam would be suitable for low-damage etching of organic materials. © 2010 American Institute of Physics.

    DOI: 10.1063/1.3548390

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  101. Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams 査読有り

    Hada Masaki, Ibuki Sachi, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 巻 ( 3 )   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    We characterized the thickness and surface damage layer of poly(methyl metacrylate) (PMMA) organic films irradiated with Ar cluster or monomer ion beam using ellipsometry. A heavily damaged layer was detected on the surface of the PMMA film irradiated with Ar monomer ion beam; more than 2-3 nm of the surface were completely metamorphosed into a carbon-like layer and damage had accumulated with irradiation. On the other hand, no significant damage was detected on PMMA films irradiated with Ar cluster ion beams. These results corresponded with measurements of the irradiated surface by X-ray photoelectron spectroscopy (XPS). The sputtering depth from PMMA film irradiated with Ar cluster/monomer ion beams can also be measured using the ellipsometry method at nanometer-order resolution. The optical method of ellipsometry may be a desirable tool for sputtering yield measurement and surface damage layer estimation for organic films. © 2010 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.49.036503

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  102. Energy effects on the sputtering yield of Si bombarded with gas cluster ion beams

    Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    AIP Conference Proceedings   1321 巻   頁: 294 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP Conference Proceedings  

    Gas cluster ion presents various irradiation effects such as high sputtering yields. It is important to study the optimum condition of incident cluster ion beam for applications in surface modification technology. In this study, the effects of incident energy and chamber pressure on the sputtering yield with gas cluster ion bombardment were investigated. The incident mean cluster size was 2000 atoms/ion and incident energy was 10-80 keV. The number of collisions with residual gas during transportation was in the range 1-20. The sputtering yield with gas cluster ion beam increased nonlinearly with increasing incident cluster energy. However, cluster ion beam easily lose their energy by collision with residual gas, and the sputtering yield decreased rapidly. For using gas cluster ion beam efficiently, the collision frequency along transportation should be kept less than a few times. © 2010 American Institute of Physics.

    DOI: 10.1063/1.3548384

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  103. Energy effects on the sputtering yield of Si bombarded with gas cluster ion beams 査読有り 国際誌

    Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    ION IMPLANTATION TECHNOLOGY 2010   1321 巻   頁: 294 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  104. Biomolecular emission by swift heavy ion bombardment

    Wakamatsu Y., Yamada H., Ninomiya S., Jones B., Seki T., Aoki T., Webb R., Matsuo J.

    AIP Conference Proceedings   1321 巻   頁: 233 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP Conference Proceedings  

    Secondary Ion Mass spectrometry (SIMS) has been generally used in the field of material sciences. In recent years, it has also been applied for molecular imaging of biological samples. Nevertheless, molecular ions derived from the large molecules (more than 1 kDa) were detected with very low sensitivity. Plasma desorption mass spectrometry (PDMS) is known as mass spectrometry for large organic molecule. In PDMS, fission fragments bombard samples and the impact induces molecular ionization by electronic excitation. Large organic molecules are detected by using swift heavy ions in SIMS. In this work, 6 MeV Cu4+ we irradiated angiotensin II, a class of peptides. The intact molecular ions generated by swift heavy ion irradiation were analyzed by time-of-flight (TOF) measurement. The yields are compared with some other probe ions, bismuth or flurane. Swift heavy ion bombardment ionized large organic molecules more effectively than other probes. Therefore, high energy ion can be applied in high resolution molecular imaging. © 2010 American Institute of Physics.

    DOI: 10.1063/1.3548357

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  105. Biomolecular Emission by Swift Heavy Ion Bombardment 査読有り 国際誌

    Wakamatsu Yoshinobu, Yamada Hideaki, Ninomiya Satoshi, Jones Brian N., Seki Toshio, Aoki Takaaki, Webb Roger, Matsuo Jiro

    ION IMPLANTATION TECHNOLOGY 2010   1321 巻   頁: 233 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

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  106. Anisotropic Etching Using Reactive Cluster Beams

    Kunihiko Koike, Yu Yoshino, Takehiko Senoo, Toshio Seki, Satoshi Ninomiya, Takaaki Aoki, Jiro Matsuo

    APPLIED PHYSICS EXPRESS   3 巻 ( 12 )   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF(3)) gas were examined. An etching rate of 40 mu m/min or higher was obtained even at room temperature when a ClF(3) molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO(2) was at least 1 : 1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.3.126501

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  107. Anisotropic Etching Using Reactive Cluster Beams 査読有り

    Kunihiko Koike, Yu Yoshino, Takehiko Senoo, Toshio Seki, Satoshi Ninomiya, Takaaki Aoki, Jiro Matsuo

    APPLIED PHYSICS EXPRESS   3 巻 ( 12 )   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF(3)) gas were examined. An etching rate of 40 mu m/min or higher was obtained even at room temperature when a ClF(3) molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO(2) was at least 1 : 1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.3.126501

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  108. MD simulation of small boron cluster implantation

    Aoki T., Seki T., Matsuo J.

    IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology     頁: 114 - 115   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology  

    Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size. © 2010 IEEE.

    DOI: 10.1109/IWJT.2010.5474974

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  109. Nano Processing with Gas Cluster Ion Beams 査読有り 国際誌

    Matsuo Jiro, Kitagawa Teruyuki, Seki Toshio, Aoki Takaaki

    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS   55 巻 ( 11 ) 頁: 776 - 782   2010年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  110. Nano Processing with Gas Cluster Ion Beams 国際誌

    Jiro Matsuo, Teruyuki Kitagawa, Toshio Seki, Takaaki Aoki

    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS   55 巻 ( 11 ) 頁: 776 - 782   2010年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC TRIBOLOGISTS  

    Web of Science

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  111. Sputtering yield measurements with size-selected gas cluster ion beams 査読有り 国際誌

    Ichiki Kazuya, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    ION BEAMS AND NANO-ENGINEERING   1181 巻   頁: 135 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  112. Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

    Hada Masaki, Hontani Yusaku, Ibuki Sachi, Ichiki Kazuya, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    ION IMPLANTATION TECHNOLOGY 2010   1321 巻   頁: 314 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

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  113. Stress measurement of carbon cluster implanted layers with in-plane diffraction technique

    Matsuo J., Ichiki K., Hada M., Ninomiya S., Seki T., Aoki T., Nagayama T., Tanjyo M.

    Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009     頁: 84 - 85   2009年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009  

    Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing. ©2009 IEEE.

    DOI: 10.1109/IWJT.2009.5166225

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  114. Study of damage accumulation and annealing process at low energy boron implantation using molecular dynamics simulations

    Aoki T., Matsuo J.

    Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009     頁: 131 - 132   2009年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009  

    Damage accumulation and annihilation processes with low-energy boron implantation were studied by molecular dynamics (MD) simulation. The MD simulation of B atom accelerated with 500eV iteratively implanted into Si(100) target showed that the number of interstitial Si atom saturates at about 1×1015/cm2 of B atomic dose. The results at several implant doses are annealed for about 4ns. When the B implanted dose is as low as 1× or 2×1014/cm2, the annealing simulations showed the re-crystallization of surface damage at 1800K and 2200K. However, very slow re-crystallization ratio was observed at the implant dose of more than 1×1015/cm2. ©2009 IEEE.

    DOI: 10.1109/IWJT.2009.5166237

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  115. Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Yamada Hideaki, Nakata Yoshihiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    RAPID COMMUNICATIONS IN MASS SPECTROMETRY   23 巻 ( 20 ) 頁: 3264 - 3268   2009年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Rapid Communications in Mass Spectrometry  

    In this study, we present molecular depth profiling of multilayer structures composed of organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq3) and 4,4′-bis[N- (1naphthyl)-N-phenyIamino]biphenyl (NPD). Molecular ions produced from Alq 3 and NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar700 ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the depth profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq3 molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular depth profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.

    DOI: 10.1002/rcm.4250

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  116. Study of density effect of large gas cluster impact by molecular dynamics simulations 査読有り

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   267 巻 ( 18 ) 頁: 2999 - 3001   2009年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Large gas cluster impacts cause unique surface modification effects because a large number of target atoms are moved simultaneously due to high-density particle collisions between cluster and surface atoms. Molecular dynamics (MD) simulations of large gas cluster impacts on solid targets were carried out in order to investigate the effect of high-density irradiation with a cluster ion beam from the viewpoint of crater formation and sputtering. An Ar cluster with the size of 2000 was accelerated with 20 keV (10 eV for each constituent atom) and irradiated on a Si(1 0 0) solid target consisting of 2 000 000 atoms. The radius of the Ar cluster was scaled by ranging from 2.3 nm (corresponding to the solid state of Ar) to 9.2 nm (64× lower density than solid state). When the Ar cluster was as dense as solid state, the incident cluster penetrated the target surface and generated crater-like damage. On the other hand, as the cluster radius increased and the irradiation particle density decreased, the depth of crater caused by cluster impact was reduced. MD results also revealed that crater depth was mainly dominated by the horizontal scaling rather than vertical scaling. A high sputtering yield of more than several tens of Si atoms per impact was observed with clusters of 4-20× lower volume density than solid state. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2009.06.019

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  117. The emission process of secondary ions from solids bombarded with large gas cluster ions 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   267 巻 ( 16 ) 頁: 2601 - 2604   2009年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    We investigated the effects of size and energy of large incident Ar cluster ions on the secondary ion emission of Si. The secondary ions were measured using a double deflection method and a time-of-flight (TOF) technique. The size of the incident Ar cluster ions was between a few hundreds and several tens of thousands of atoms, and the energy up to 60 keV. Under the incidence of keV energy atomic Ar ions, mainly atomic Si ions were detected, whereas Si cluster ions were rarely observed. On the other hand, under the incidence of large Ar cluster ions, the dominant secondary ions were Sin+ (2 ≤ n ≤ 11). It has become clear that the yield ratio of secondary Si cluster ions was determined by the velocity of the incident cluster ions, and this strong dependence of the yield ratio on incident velocity should be related to the mechanisms of secondary ion emission under large Ar cluster ion bombardment. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2009.05.019

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  118. Imaging mass spectrometry with nuclear microprobes for biological applications 査読有り

    Nakata Y., Yamada H., Honda Y., Ninomiya S., Seki T., Aoki T., Matsuo J.

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   267 巻 ( 12-13 ) 頁: 2144 - 2148   2009年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    A mass spectrometric technique using nuclear microprobes is presented in this paper for biological applications. In recent years, imaging mass spectrometry has become an increasingly important technique for visualizing the spatial distribution of molecular species in biological tissues and cells. However, due to low yields of large molecular ions, the conventional secondary ion mass spectrometry (SIMS), that uses keV primary ion beams, is typically applied for imaging of either elements or low mass compounds. In this study, we performed imaging mass spectrometry using MeV ion beams collimated to about 10 μm, and successfully obtained molecular ion images from plant and animal cell sections. The molecular ion imaging of the pollen section showed high intensities of PO3- ions in the pollen cytoplasm, compared to the pollen wall, and indicated the heterogeneous distribution in the cytoplasm. The 3T3-L1 cell image revealed the high intensity of PO3- ions, in particular from the cell nucleus. The result showed that not only the individual cell, but also the cell nucleus could be identified with the present imaging technique. © 2009.

    DOI: 10.1016/j.nimb.2009.03.094

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  119. Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Yamada Hideaki, Nakata Yoshihiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    RAPID COMMUNICATIONS IN MASS SPECTROMETRY   23 巻 ( 11 ) 頁: 1601 - 1606   2009年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Rapid Communications in Mass Spectrometry  

    We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time-of-flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar700 and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials.© 2009 John Wiley & Sons, Ltd.

    DOI: 10.1002/rcm.4046

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  120. High-speed processing with Cl-2 cluster ion beam 査読有り

    Seki T., Aoki T., Matsuo J.

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   267 巻 ( 8-9 ) 頁: 1444 - 1446   2009年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Cluster ion beam processes can produce high rate sputtering with low damage compared with monomer ion beam processes. Cl2 cluster ion beams with different size distributions were generated with controlling the ionization conditions. Size distributions were measured using the time-of-flight (TOF) method. Si substrates and SiO2 films were irradiated with the Cl2 cluster ions at acceleration energies of 10-30 keV and the etching ratio of Si/SiO2 was investigated. The sputtering yield increased with acceleration energy and was a few thousand times higher than that of Ar monomer ions. The sputtering yield of Cl2 cluster ions was about 4400 atoms/ion at 30 keV acceleration energy. The etching ratio of Si/SiO2 was above eight at acceleration energies in the range 10-30 keV. Thus, SiO2 can be used as a mask for irradiation with Cl2 cluster ion beam, which is an advantage for semiconductor processing. In order to keep high sputtering yield and high etching ratio, the cluster size needs to be sufficiently large and size control is important. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2009.01.069

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  121. Study of crater formation and sputtering process with large gas cluster impact by molecular dynamics simulations 査読有り

    Aoki Takaaki, Seki Toshio, Ninomiya Satoshi, Ichiki Kazuya, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   267 巻 ( 8-9 ) 頁: 1424 - 1427   2009年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of large argon clusters impacting on silicon solid targets were performed in order to study the transient process of crater formation and sputtering. The MD simulations demonstrate that the initial momentum of incident cluster is transferred to target surface atoms through multiple collision mechanism, where the initial momentum, which is along to the surface normal before impact, is deflected to lateral direction. This momentum transfer process was analyzed by the calculation of the velocity at the crater edge (the interface between cluster and target). In the case of Ar1000 cluster impact on Si(1 0 0) target at low energy per atom less than 40 eV/atom, the maximum value of lateral velocity of the crater edge increases in proportional to the velocity of incident cluster atoms. On the other hand, the crater edge velocity saturates over 40 eV/atom of incident energy per atom. In this case, the whole of constituent cluster atoms are implanted into the target and expand in both lateral and reflective directions at the subsurface region of the target. These MD simulations demonstrated that this collisional process result in the high yield sputtering of the target atoms. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2009.01.162

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  122. Low Damage Etching of Polymer Materials for Depth Profile Analysis Using Large Ar Cluster Ion Beam 査読有り 国際誌

    Satoshi Ninomiya, Kazuya Ichiki, Hideaki Yamada, Yoshihiko Nakata, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Journal of Surface Analysis   15 巻 ( 3 )   2009年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  123. A Processing Technique for Cell Surfaces Using Gas Cluster Ions for Imaging Mass Spectrometry 査読有り 国際誌

    Hideaki Yamada, Kazuya Ichiki, Yoshihiko Nakata, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Journal of the Mass Spectrometry Society of Japan   57 巻 ( 3 ) 頁: 117 - 121   2009年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本質量分析学会  

    We developed a processing technique for biological samples, that is, animal cells, for imaging mass spectrometry using gas cluster ion beams. Secondary ion mass spectrometry has been investigated for cellular imaging with high spatial resolution. Nanoscale processing techniques are needed for cellular level imaging, for example, for removing contamination from cell surfaces and exposing the insides of cells. In this study, we compared the mass spectrum of the unetched cell sample to that of the cell irradiated with an Ar cluster ion beam. The contamination was removed from the sample surface and the signals of intracellular components were detected. The results indicate that the cells were etched with low damage using the gas cluster ion beam. Finally, we compared the ion image of an unetched cell to that of an etched cell and demonstrated that the technique of cluster ion irradiation could be applied to the processing of samples for cellular level imaging mass spectrometry.

    DOI: 10.5702/massspec.57.117

  124. Matrix-free high-resolution imaging mass spectrometry with high-energy ion projectiles 査読有り

    Nakata Yoshihiko, Honda Yoshiro, Ninomiya Satoshi, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    JOURNAL OF MASS SPECTROMETRY   44 巻 ( 1 ) 頁: 128 - 136   2009年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Mass Spectrometry  

    The importance of imaging mass spectrometry (MS) for visualizing the spatial distribution of molecular species in biological tissues and cells is growing. We have developed a new system for imaging MS using MeV ion beams, termed MeV-secondary ion mass spectrometry (MeV-SIMS) here, and demonstrated more than 1000-fold increase in molecular ion yield from a peptide sample (1154 Da), compared to keV ion irradiation. This significant enhancement of the molecular ion yield is attributed to electronic excitation induced in the near-surface region by the impact of high energy ions. In addition, the secondary ion efficiency for biologically important compounds (> 1 kDa) increased to more than 1010 cm-2, demonstrating that the current technique could, in principle, achieve micrometer lateral resolution. In addition to MeV-SIMS, peptide compounds were also analyzed with cluster-SIMS and the results indicated that in the former method the molecular ion yields increased substantially compared to the latter. To assess the capability of MeV-SIMS to acquire heavy-ion images, we have prepared a micropatterned peptide surface and successfully obtained mass spectrometric imaging of the deprotonated peptides (m/z 1153) without any matrix enhancement. The results obtained in this study indicate that the MeV-SIMS technique can be a powerful tool for high-resolution imaging in themass range from 100 to over 1000 Da. Copyright © 2008 John Wiley & Sons, Ltd.

    DOI: 10.1002/jms.1482

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  125. 高速重イオンを用いた低真空SIMSの開発

    若松 慶信, 山田 英丙, 中田 由彦, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎

    表面科学学術講演会要旨集   29 巻 ( 0 ) 頁: 35 - 35   2009年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    近年、生体試料における質量イメージング技術の発展が期待されている。SIMSは高真空下での分析手法であるが、高速重イオンをプローブとすることにより低真空下でのSIMSに成功した。本発表では、数千Pa程度の低真空下で質量イメージングを行うための分析系の開発とその結果について報告する。

    DOI: 10.14886/sssj2008.29.0.35.0

  126. A fragment-free ionization technique for organic mass spectrometry with large Ar cluster ions 査読有り

    Ninomiya Satoshi, Nakata Yoshihiko, Honda Yoshiro, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 1588 - 1590   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    In this report, we propose to use the incidence of cluster ions that are much larger than molecular ions as a fragment-free ionization technique for organic secondary ion mass spectrometry. Secondary ions were measured for amino acid and peptide targets bombarded with 3, 8 and 13 keV large Ar cluster ions. The relative yields of the fragment ions decreased drastically with increasing incident cluster size. Fragment-free ionization of the molecule was accomplished when large cluster ions with optimized size and energy were incident on a biomolecular sample. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2008.05.004

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  127. High sputtering yields of organic compounds by large gas cluster ions 査読有り

    Ichiki K., Ninomiya S., Nakata Y., Honda Y., Seki T., Aoki T., Matsuo J.

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 1148 - 1150   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    We measured the sputtering yield, surface roughness and surface damage of thin leucine films bombarded with Ar cluster ions and examined the usefulness of large gas cluster ions for the depth profiling of organic compounds. Ar cluster ion beams with a mean size of 2000 atoms/cluster and energies from 5 to 30 keV were used. Sputtering yields increased linearly with incident ion energy and were extremely high compared to inorganic materials. Surface damage was investigated by measuring positive secondary ions emitted from the leucine film before and after cluster ion irradiation. After irradiation the leucine surface became smoother. The yield ratio of protonated leucine ions to other fragment ions kept constant before and after Ar cluster ion irradiation. These results indicate that large gas cluster ions are useful for depth profiling of organic compounds. © 2008.

    DOI: 10.1016/j.apsusc.2008.05.032

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  128. MD simulation study of the sputtering process by high-energy gas cluster impact 査読有り

    Aoki Takaaki, Seki Toshio, Ninomiya Satoshi, Matsuo Jiro

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 944 - 947   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    We performed molecular dynamics (MD) simulations to study the characteristic sputtering process with large cluster ion impact. The statistical properties of incident Ar and sputtered Si atoms were examined using 100 different MD simulations with Ar 1000 cluster impacting on a Si(0 0 1) target at a total acceleration energy of 50 keV. The results show that the kinetic energy distribution of Ar atoms after impact obeys the high-temperature Boltzmann distribution due to thermalization through high-density multiple collisions on the target. On the other hand, the kinetic energy distribution of sputtered target atoms demonstrates a hybrid model of thermalization and collision-cascade desorption processes. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2008.05.008

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  129. Low Damage Etching and SIMS Depth Profiling with Large Ar Cluster Ions 査読有り 国際誌

    Satoshi Ninomiya, Jiro Matsuo, Kazuya Ichiki, Hideaki Yamada, Yoshihiko Nakata, Yoshiro Honda, Toshio Seki, Takaaki Aoki

    Transactions of the MRS-J   33 巻 ( 4 )   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  130. High-Speed Nano-Processing with Cluster Ion Beams 査読有り 国際誌

    Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the MRS-J   33 巻 ( 4 )   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  131. Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Nakata Yoshihiko, Honda Yoshiro, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 880 - 882   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si + ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si 4+ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO + were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2008.05.063

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  132. SIMS Analysis of Biological Mixtures with Fast Heavy Ion Irradiation 査読有り 国際誌

    Yoshiro Honda, Yoshihiko Nakata, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    Transactions of the MRS-J   33 巻 ( 4 )   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  133. What size of cluster is most appropriate for SIMS? 査読有り

    Matsuo Jiro, Ninomiya Satoshi, Nakata Yoshihiko, Honda Yoshiro, Ichiki Kazuya, Seki Toshio, Aoki Takaaki

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 1235 - 1238   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    Secondary ion emission with large gas cluster ion is reviewed from the point of view of secondary ion mass spectroscopy (SIMS). We have proposed to use large cluster ions to realize fragment-free ionization for SIMS analysis for various organic materials, such as amino acids and peptides. When large cluster ions with optimized size and energy were incident on biomolecular samples, the relative yields of the fragment ions decreased drastically with the velocity of incident cluster ions. Molecular depth profiling capability is also demonstrated by using large gas cluster ions as the primary ion for SIMS. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2008.05.057

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  134. Yield enhancement of molecular ions with MeV ion-induced electronic excitation 査読有り

    Nakata Y., Honda Y., Ninomiya S., Seki T., Aoki T., Matsuo J.

    APPLIED SURFACE SCIENCE   255 巻 ( 4 ) 頁: 1591 - 1594   2008年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    We performed secondary ion mass spectrometry for arginine thin films in the incident energy range from 10 keV to 2 MeV, in which electronic energy loss in the surface region increases with energy and exceeds the nuclear energy loss. The yield of protonated arginine increased with incident energy, and at 2 MeV it was approximately two orders of magnitude larger than at 10 keV, where the nuclear collision process is dominant. It was found that the molecular ion desorption is enhanced by the electronic excitation induced in the near-surface region. In addition, the yield ratios of the fragment ions to the protonated arginine decreased with incident energy, which indicates that the nuclear energy deposition significantly affects molecular fragmentation. These results demonstrate a soft desorption and ionization of biomolecules by the MeV ion-induced electronic excitation. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2008.05.108

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  135. Computer modeling of cluster ion impacts

    Aoki T., Seki T., Matsuo J.

    IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology     頁: 49 - 54   2008年9月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology  

    By the recent development of high-performance computing, molecular dynamics method has been a powerful technique for analyzing collisions between cluster and solid target system. In this paper, molecular dynamics simulations of various kinds of clusters impacting on the solid target were demonstrated. The characteristic collisional process of cluster and solid target in penetration depth, dynamic surface morphology deformation and damage formation were examined. ©2008 IEEE.

    DOI: 10.1109/IWJT.2008.4540016

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  136. 高速重イオンを利用したイメージング質量分析

    中田 由彦, 山田 英丙, 本田 善郎, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎

    質量分析 = Mass spectroscopy   56 巻 ( 4 ) 頁: 201 - 208   2008年8月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本質量分析学会  

    In this paper, we describe mass spectrometric techniques using swift heavy ions, for biological application. Desorption of large biomolecular ions due to irradiation by swift heavy ions was first observed in 1974, and the time-of-flight mass spectrometry using fission fragments from a <sup>252</sup>Cf source is called plasma desorption mass spectrometry (PDMS). PDMS has been successfully applied in the detection of large biomolecules up to 20 kDa. However, the number of PDMS studies decreased after the emergence of fast atom bombardment (FAB). In recent years, a new mass spectrometric technique, which is called imaging mass spectrometry, has attracted attention, and numerous studies have been conducted on matrix assisted laser desorption/ionization (MALDI) and secondary ion mass spectrometry (SIMS). We have developed a new system for imaging mass spectrometry using MeV-ion beams, which is termed MeV-SIMS. High-resolution MeV-SIMS imaging requires high secondary ion yields, beam focusing, and careful sample preparation. Here, we present our results on MeV-SIMS imaging and future prospects.

    DOI: 10.5702/massspec.56.201

  137. Carbon Nanotubes from a Divided Catalyst : the Carbon Transmission Method

    Hikata Takeshi, Hayashi Kazuhiko, Mizukoshi Tomoyuki, SAKURAI Yoshiaki, ISHIGAMI Itsuo, AOKI Takaaki, SEKI Toshio, MATSUO Jiro

    Applied physics express   1 巻 ( 3 ) 頁: "34002 - 1"-"34002-3"   2008年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

  138. Carbon nanotubes from a divided catalyst: the carbon transmission method

    Hikata Takeshi, Hayashi Kazuhiko, Mizukoshi Tomoyuki, Sakurai Yoshiaki, Ishigami Itsuo, Aoki Takaaki, Seki Toshio, Matsuo Jiro

    APPLIED PHYSICS EXPRESS   1 巻 ( 3 ) 頁: 0340021 - 0340023   2008年3月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    We have fabricated carbon nanotubes (CNTs) using a catalyzed growth technique that we call the carbon transmission method (CTM). We could control independently functions for carbon source gas supply and CNT growth by using a foil barrier (Ag) penetrated by pure Fe fibers. CNTs grew on one end of the Fe fibers, formed from diffused carbon that originates in carbon source gas at the other end of the fibers. Long CNTs with length over 100 μm were obtained on the end of the Fe fibers In the carbon transmitted side. © 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.034002

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  139. クラスターイオンの新しい展開:~ナノプロセスから先端分析応用~

    松尾 二郎, 二宮 啓, 青木 学聡, 瀬木 利夫

    Journal of Surface Analysis   14 巻 ( 3 ) 頁: 196 - 203   2008年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 表面分析研究会  

    <p> 原子・分子が同時に同じ場所に多数衝突するクラスターイオンでは,非線形照射効果と呼ばれる新しい現象が起こる.これを利用し様々な分野で画期的な成果が報告されており,従来のイオンビーム技術の限界を打破する新しい原理に基づく新技術として期待されている.ここでは,クラスターイオン特有の非線形現象について述べるとともに,そのナノプロセスへの応用やクラスターイオンを1次イオンとして用いるクラスターSIMSなどの分析技術についても概観する.</p>

    DOI: 10.1384/jsa.14.196

  140. Computer modeling of cluster ion impacts 査読有り 国際誌

    Aoki Takaaki, Seki Toshio, Matsuo Jiro

    EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY     頁: 49 - 54   2008年

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    掲載種別:研究論文(学術雑誌)  

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  141. Investigation of Damage with Cluster Ion Beam Irradiation Using HR-RBS 査読有り 国際誌

    Seki Toshio, Aoki Takaaki, Matsu Jiro

    ION IMPLANTATION TECHNOLOGY 2008   1066 巻   頁: 423 - +   2008年

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    掲載種別:研究論文(学術雑誌)  

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  142. Investigation of damage with cluster ion beam irradiation using HR-RBS

    Seki T., Aoki T., Matsuo J.

    AIP Conference Proceedings   1066 巻   頁: 423 - 426   2008年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Conference Proceedings  

    Cluster ion beam can process targets with shallow damage because of the very low irradiation energy per atom. However, it is needed to investigate the damage with cluster ion beam irradiation, because recent applications demand process targets with ultra low damage. The shallow damage can be investigated from depth profiles of specific species before and after ion irradiation. They can be measured with secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectroscopy (RBS). High resolution Rutherford backscattering spectroscopy (HR-RBS) is a non destructive measurement method and depth profiles can be measured with nano-resolution. The cluster ion beam mixing of thin Ni layer in carbon targets can be investigated with HR-RBS. The mixing depth with cluster ion irradiation at 10 keV was about 10 nm. The mixing depth with cluster ion irradiation at 1 keV and 5 keV were less than 1 nm and 5 nm, respectively. The number of displaced Ni atoms with cluster ion irradiation was very larger than that with monomer ion irradiation of same energy. This result shows that violent mixing occurs with single cluster impact.

    DOI: 10.1063/1.3033653

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  143. Cluster ion implantation - Prospects and challenges

    Matsuo J., Aoki T., Seki T.

    Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007     頁: 53 - 54   2007年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007  

    More than ten years have passed since cluster ion implantation was proposed by Kyoto University. Cluster ion implanters equipped with a specially designed ion source are announced for device manufacturing. This technique is now a candidate for ultra shallow junction formation in the ITRS Road Map [1]. It is essential to understand the atomistic mechanism of cluster implantation, because the behavior of damaged atoms during annealing is a very important topic for high-quality shallow junction formation. The damage induced with cluster ions is presented. ©2007 IEEE.

    DOI: 10.1109/IWJT.2007.4279945

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  144. MD study of damage structures with poly-atomic boron cluster implantation

    Aoki T., Seki T., Matsuo J.

    Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007     頁: 23 - 24   2007年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007  

    The MD simulations of B monomer and small cluster implantation were performed. The non-linear effect for implant range was observed when the incident energy is as low as few hundreds eV/atom, where the B10 or B18 cluster implantation gives deeper implantation energy and so higher implant efficiency of dopants than that of B monomer or dimer. For damage formation, cluster implantation caused large number of collisions at narrow surface region, which results in high-density amorphization of impact area. This amorphization effect was observed at both low and high energy cluster ion implantation, and is expected to reduce enhanced diffusion and show good annihilation process. ©2007 IEEE.

    DOI: 10.1109/IWJT.2007.4279937

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  145. Low damage smoothing of magnetic materials using off-nonnal gas cluster ion beam irradiation 査読有り

    Kakuta S., Sasaki S., Furusawa K., Seki T., Aoki T., Matsuo J.

    SURFACE & COATINGS TECHNOLOGY   201 巻 ( 19-20 ) 頁: 8632 - 8636   2007年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Coatings Technology  

    A damage-free smoothing process for magnetic materials using a gas cluster ion beam (GCIB) has been studied. As the areal density of hard disk drives (HDDs) has increased, the flying height of the magnetic recording head above the disk has been decreasing. In order to further reduce the flying height and improve the sensitivity of sensors, a damage-free smoothing technology for magnetic materials is imperative. A GCIB process has been proposed as a novel smoothing technique for various materials. With this process it is expected that the damage will be low, since the gas clusters are aggregations of a few to thousands of atoms or molecules. In this paper, oblique GCIB irradiation has been studied in order to achieve low damage smoothing of PtMn and NiFe thin films. The surface morphology after GCIB irradiation was observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). A smooth surface with an average roughness of less than 1 nm was obtained by using oblique GCIB irradiation. Irradiation damage, such as fluctuations in the ratio of the material components and oxidation of the surface, were investigated by secondary ion mass spectrometry (SIMS). The fluctuations were suppressed by using oblique GCIB irradiation with incident angles larger than 80°. Consequently, irradiation from a GCIB at grazing incidence can be applied to achieve low-damage smoothing of magnetic materials. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2006.03.064

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  146. Molecular dynamics study of monomer and dimer emission processes with high energy gas cluster ion impact 査読有り

    Aoki Takaaki, Seki Toshio, Ninomiya Satoshi, Matsuo Jiro

    SURFACE & COATINGS TECHNOLOGY   201 巻 ( 19-20 ) 頁: 8427 - 8430   2007年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Coatings Technology  

    The mechanism of the sputtering process by energetic large cluster ion impacts was studied using molecular dynamics (MD) simulations. MD simulations of Ar1000 clusters accelerated with 50 keV total energy impacting on a Si(100) target were performed with 50 trials at different impact points in order to improve the statistical reliance. From these MD simulations, a sputtering yield of about 20 Si atoms/impact was obtained. Si clusters such as Si2, Si3, etc. were also found in the sputtered particles, and the sputtering yields for each cluster size obey the power-decay rule with a decay index of 2.3-3. The investigation of trajectories of sputtered Si1 and Si2 showed that initial coordinates of sputtered particles residing within a region corresponds to a crater-shaped hole caused by cluster impact. As for the sputtering of dimers, it is found that, not only the emission of a preformed dimer (i.e. a pair of target atoms initially bound before the cluster impact), but the emission of dynamically formed dimers through multiple collisions is also probable event for cluster impact. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2006.09.325

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  147. Molecular dynamics study of glancing angle gas cluster irradiation on irregular-structured surfaces 査読有り

    Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   261 巻 ( 1-2 ) 頁: 639 - 642   2007年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Surface modification processes resulting from glancing angle gas cluster ion irradiation were studied by molecular dynamics (MD) simulations. Large Ar2000 gas clusters accelerated with 20 keV were irradiated onto Si(1 0 0) substrates to which were attached small Si block-shaped (size of 4096, 16384 or 65536 atoms) structures. The MD simulations revealed that when an Ar cluster is irradiated at 80° of incident angle, the cluster slides on the substrate surface without damage and impacts on the wall of the block structures causing multiple collisions, and dynamic deformation of the blocks. Especially, in the case of the impact on the small surface block (Si4096), a large part of the block was sputtered as a large chunk, and the target substrate was smoothed with only one cluster impact. The evaluation of the damage distribution showed that silicon interstitials, caused by the multiple collision mechanism, reside within 15Å from the surface, which suggests that low-damage and high-performance surface modification processing would be realized by utilizing a glancing angle gas cluster ion beam irradiation technique. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2007.04.005

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  148. Molecular dynamics simulations of surface smoothing and sputtering process with glancing-angle gas cluster ion beams 査読有り

    Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   257 巻 ( 1-2 SPEC. ISS. ) 頁: 645 - 648   2007年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Surface modification processes with glancing-angle large gas cluster irradiation were studied by molecular dynamics simulations. The MD simulation of an Ar2000 gas cluster impacting on Si(1 0 0) substrate with small Si4096 block structure attached on the surface was performed. The MD result has shown that, when the Ar cluster impacts on the target at 20 keV of total acceleration energy and at 80° of incident angle, the incident cluster slides on the target surface without creating surface damage and most of the constituent atoms in the cluster collide with the sidewall of the surface block. Up to 10 keV of kinetic energy of the incident cluster was transferred to the target irregular structure, which results in the sputtering or stretching of the surface block and the target surface is smoothed. This characteristic surface modification effect was observed when the surface block is located farther than 200 Å from the point where the incident cluster contacts with the target surface. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2007.01.048

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  149. Size effect in cluster collision on solid surfaces 査読有り

    Matsuo Jiro, Ninomiya Satoshi, Nakata Yoshihiko, Ichiki Kazuya, Aoki Takaaki, Seki Toshio

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   257 巻 ( 1-2 SPEC. ISS. ) 頁: 627 - 631   2007年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    New surface modification processes have been demonstrated using gas cluster ion irradiations. Multiple collision and high energy density collision of cluster ions are responsible for "non-linear phenomena", which play an important role in the surface modification process. Because of the unique interaction between cluster ions and surface atoms, atomistic mechanisms of cluster ion bombardment must be understood for the further developments of this technology. Cluster size is a unique parameter for cluster ions. One of the fundamental questions in this surface modification technique is the cluster size effect. It is important to use appropriate cluster size in each process. Size dependence of sputtering yields and secondary ion yields with large Ar cluster (N > 300) have been measured. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2007.01.164

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  150. Measurements of secondary ions emitted from organic compounds bombarded with large gas cluster ions 査読有り

    Ninomiya Satoshi, Nakata Yoshihiko, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   256 巻 ( 1 ) 頁: 493 - 496   2007年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    We propose to use cluster ions that are much larger than the molecular ions as primary ions for organic secondary ion mass spectrometry. Incident Ar cluster ion beams with energies from 10 to 20 keV and a mean size of about 1000 atoms/cluster were used. Secondary ions were measured for a thin arginine film target (200 nm) bombarded with large Ar cluster ions using a time-of-flight technique. Molecular ions of arginine and characteristic fragment ions were detected with high sensitivity. When large Ar cluster ions such as Ar1500 were incident on the arginine target, molecular ions of arginine were detected with little fragment ions. This indicates that large cluster ions can ionize arginine molecules without damaging them. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2006.12.047

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  151. Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere 査読有り

    Ichiki K., Ninomiya S., Seki T., Aoki T., Matsuo J.

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   256 巻 ( 1 ) 頁: 350 - 353   2007年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Surface oxidation of Si assisted by Ar cluster impact with a current density of a few μA/cm2 under O2 atmosphere was investigated. Thin-film formation by cluster ion beam presents a number of advantages such as atomic-scale surface smoothing, high density and precise stoichiometry. We used an Ar cluster ion beam with 20 keV and a mean size of 1000 atoms per cluster and measured the emission yields of Si+ and SiO+ after Ar cluster ion irradiation in O2 atmosphere using a quadrupole mass spectrometer to investigate the dependence of Si surface oxidation on oxygen partial pressure. It was found that the Si surface was oxidized by Ar cluster ion irradiation in O2 atmosphere. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2006.12.026

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  152. The effect of incident cluster ion energy and size on secondary ion yields emitted from Si 査読有り

    Ninomiya Satoshi, Ichiki Kazuya, Nakata Yoshihiko, Seki Toshio, Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   256 巻 ( 1 ) 頁: 528 - 531   2007年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Secondary ions produced from a Si target bombarded with Ar cluster ions much larger than the molecular ions have been investigated. Secondary ions have been measured for a Si target bombarded with large Ar cluster ions at an incident energy between 7.5 and 27.5 keV using a time-of-flight technique. The mean size of the Ar cluster ion was about 1000 atoms/cluster, and then the collision energy per atom is between a few tens of eV and a few hundreds of eV. Secondary silicon cluster ions were detected under large Ar cluster ion bombardment. In this study, we succeeded to accurately measure the dependence of secondary ion spectra obtained by large Ar cluster ions on the incident cluster-ion size using a time-of-flight technique combined a primary-ion beam deflector and a secondary-ion deflector. The dependence of the secondary ion spectra under large Ar cluster ion bombardment on the incident cluster size is discussed. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2006.12.074

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  153. Molecular dynamics study of surface modification with a glancing angle gas cluster ion beam 査読有り

    Aoki Takaaki, Matsuo Jiro

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   255 巻 ( 1 ) 頁: 265 - 268   2007年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The collisional process of glancing angle gas cluster ion impact was studied using molecular dynamics (MD) simulations. Ar2000 clusters accelerated to 20 keV were irradiated onto a Si(1 0 0) target at various incident angles ranging from 0° to 80°. The investigation of the surface profile after collision revealed that there is a certain incident angle where the incident cluster penetrates the target surface to cause crater-like damage. For larger incident angles, such as 80° from the surface normal, the cluster slides on the target surface without creating displacements. This mechanism of non-damage irradiation was examined with respect to the perpendicular component of incident energy. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2006.11.071

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  154. The effect of incident cluster ion size on secondary ion yields produced from Si 査読有り

    Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Toshio Seki, Takaaki Aoki, Jiro Matsuo

    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4   32 巻 ( 4 ) 頁: 895 - 898   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:MATERIALS RESEARCH SOCIETY JAPAN-MRS-J  

    Secondary ions emitted from a Si target have been investigated under large Ar cluster ion bombardment. Incident ion beams with energies from 10 to 30 keV were used and the mean size of the Ar cluster ion beam was about 1000 atoms per cluster. Secondary Si(n)(+)(n=1-11) ions were measured from Si under Ar cluster ion bombardment, while only atomic ions were measured under Ar monomer ion bombardment. In this study, we Succeeded to accurately measure the incident size dependence of secondary ion spectra for Si under large Ar cluster ion bombardment using a time-of-flight technique combined a primary-ion beam deflector and a secondary-ion deflector. When the total incident ion energy was kept constant, the yields of secondary cluster ions such as Si(6)(+) relative to those of Si(+) increased with size. On the other hand, when the incident Ar cluster size was kept constant, the yields of secondary cluster ions relative to those of Si(+) decreased with energy. The effect of incident cluster size on secondary ion yields is discussed.

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  155. High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions 査読有り

    Ninomiya Satoshi, Aoki Takaaki, Seki Toshio, Matsuo Jiro

    APPLIED SURFACE SCIENCE   252 巻 ( 19 ) 頁: 6550 - 6553   2006年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Si n+ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size. © 2006.

    DOI: 10.1016/j.apsusc.2006.02.100

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  156. Molecular dynamics study of particle emission by reactive cluster ion impact 査読有り

    Aoki Takaaki, Matsuo Jiro

    APPLIED SURFACE SCIENCE   252 巻 ( 19 ) 頁: 6466 - 6469   2006年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    Molecular dynamics (MD) simulations of sputtering process with fluorine cluster impact onto silicon targets were performed. By iterating collisional simulations on a same target, accumulation of incident atoms and evolution of surface morphology were examined as well as emission process of precursors. When (F 2 ) 300 clusters were sequentially irradiated on Si(1 0 0) target at 6 keV of total incident energy, column-like surface structure covered with F atoms was formed. As the number of incident clusters increased, sputtering yield of Si atoms also increased because the target surface was well fluoridised to provide SiF x precursors. Size distribution of emitted particles showed that SiF 2 was the major sputtered particle, but various types of silicon-fluoride compounds such like Si 2 F x , Si 3 F x and very large molecules consists of 100 atoms were also observed. This size distribution and kinetic energy distribution of desorbed materials were studied, which showed that the sputtering mechanism with reactive cluster ions is similar to that under thermal equilibrium condition at high-temperature. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2006.02.195

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  157. Secondary ion measurements for oxygen cluster ion SIMS 査読有り

    Ninomiya Satoshi, Aoki Takaaki, Seki Toshio, Matsuo Jiro

    APPLIED SURFACE SCIENCE   252 巻 ( 19 ) 頁: 7290 - 7292   2006年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    We have proposed to use oxygen cluster ions, which are much larger than molecular ions, as primary ions for secondary ion mass spectrometry (SIMS). A high intensity gas cluster ion source with a current density of a few μAs/cm 2 has been developed. Secondary ions emitted from Si have been investigated under O 2 and Ar cluster ion bombardment. A large enhancement of the yield of secondary ions produced by large O 2 and Ar cluster ions was found. The SIMS system utilizing large O 2 cluster ions must give both excellent depth resolution and high secondary ion yield. © 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.apsusc.2006.02.138

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  158. Molecular dynamics simulations of surface modification and damage formation by gas cluster ion impacts 査読有り

    Aoki T, Matsuo J

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   242 巻 ( 1-2 ) 頁: 517 - 519   2006年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Damage formation process by gas cluster impact was studied using molecular dynamics simulations. Ar gas clusters with various sizes (several tens to several thousand) and energies (several to several tens keV, totally) were irradiated on Si substrates. The relationship between mean damage depth, incident energy and cluster size was examined and the model and conditions to cause damage by cluster impact were discussed.

    DOI: 10.1016/j.nimb.2005.09.011

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  159. クラスターイオン照射における二次イオン収率の入射サイズ依存性

    市木 和弥, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎

    表面科学講演大会講演要旨集   26 巻 ( 0 ) 頁: 108 - 108   2006年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    クラスターイオンは単原子イオンと比較して、低速で高エネルギー密度での照射が容易であるため、高精度かつ高効率な表面分析、表面改質が可能とされている。しかし、クラスターと固体表面との相互作用は十分に理解されていない。よって本研究では、クラスターイオン照射によりSi試料から放出される二次イオン収率の入射サイズ依存性を飛行時間型質量分析法を用いて分析し、クラスター照射効果について考察する。

    DOI: 10.14886/sssj.26.0.108.0

  160. Arクラスターイオン衝撃により生体高分子薄膜から放出される二次イオン収率の入射サイズ依存性

    二宮 啓, 市木 和弥, 中田 由彦, 瀬木 利夫, 青木 学聡, 松尾 二郎

    表面科学講演大会講演要旨集   26 巻 ( 0 ) 頁: 106 - 106   2006年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    クラスターイオンをプローブとする有機物の二次イオン質量分析は、単原子イオンと比較して収率が高く試料の損傷も少ない。しかしクラスター照射での収率増加機構や最大収率を与えるための入射サイズの最適化については、ほとんど研究されていない。そこで本研究ではサイズ選別したArクラスターをアミノ酸薄膜に照射し、二次イオンを飛行時間型質量分析法を用いて測定することにより収率の入射サイズ依存性について調べた。

    DOI: 10.14886/sssj.26.0.106.0

  161. High-speed nano-processing with cluster ion beams 査読有り 国際誌

    Seki T., Matsuo J.

    ION IMPLANTATION TECHNOLOGY   866 巻   頁: 214 - +   2006年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  162. Molecular dynamics simulations of the cluster-size effect on the sputtering process with reactive gas cluster ions 査読有り

    T. Aoki, J. Matsuo

    Materials Research Society Symposium Proceedings   908 巻   頁: 18 - 24   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium Proceedings  

    To investigate the size-effect of reactive clusters on sputtering processes, we performed molecular dynamics (MD) simulations of reactive cluster ions with various sizes impacting on solid targets. Various sizes of fluorine clusters, (F2)30, (F2)300 and (F 2)3000, were irradiated on a Si(100) target at the same total incident energy of 6 keV. These clusters were irradiated on the same target one after another in order to reproduce real experimental conditions such as the accumulation of fluorine atoms in the target. The MD simulations of sequential cluster impacts enabled to perform various statistical analyses regarding the sputtered particles. The study of cluster size distributions showed that the sputtering process by reactive cluster ion impact has similarity with the emission from quasi-liquid materials excited to hyper-thermal conditions by ion bombardment. However, the major sputtered particles were different with each other; Si for (F2)30 (100 eV/atom), SiF2 for (F2)300 (10 eV/atom), and SiF 3 for (F2)3000 (1 eV/atom). At the impact of a large size cluster with low incident energy, a large number of Si-F bondings were generated at the cluster-target interface surface, which enhances formation of volatile SiFx compounds with many fluorine atoms. In contrast, a small cluster with high kinetic energy-per-atom could cause the formation of numerous energetic surface atoms at the near surface region, which could be sputtered without being well fluoridated. © 2006 Materials Research Society.

    DOI: 10.1557/proc-0908-oo05-07

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  163. Exprimental study of cluster size effect with size-selected cluster ion beam 査読有り

    Toyoda N.

    Novel Materials Processing by Advanced Electromagnetic Energy Sources     頁: 219 - 222   2005年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    DOI: 10.1016/B978-008044504-5/50044-1

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  164. Gas cluster ion beam source for secondary ion emission measurements 査読有り

    Ono L.

    Novel Materials Processing by Advanced Electromagnetic Energy Sources     頁: 227 - 230   2005年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    DOI: 10.1016/B978-008044504-5/50046-5

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  165. Molecular dynamics study of the angular dependence of reactive cluster impacts 査読有り

    Aoki T, Matsuo J

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   241 巻 ( 1-4 ) 頁: 594 - 598   2005年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The collisional processes of fluorine clusters impacting at various incident angles on bare silicon surfaces were studied, and the change of the surface profile, sticking probabilities of F atoms, sputtering yield and the distribution of the sputtered particles were examined. When a (F 2)3 0 0 cluster with 10 eV/atom impacts on a Si(1 0 0) surface at normal incident, the cluster penetrates the surface causing a spherical crater structure with the F atoms densely covered. As the incident angle increases, the penetration depth of cluster decreases and the simulation shows an asymmetric crater profile. Especially at an incident angle of 75°, the surface profile did not change but F atoms were deposited over a wide area. The distribution of sputtered particles also depends on incident angle. At normal incidence, the Si atoms are sputtered as well as silicon-fluoride molecules such as SiF and SiF2, while only SiFx molecules are sputtered at 75° of incident angle. From these results the surface etching process caused by reactive cluster impacts are discussed. © 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2005.07.108

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  166. Surface structure dependence of impact processes of gas cluster ions 査読有り

    Aoki T.

    Novel Materials Processing by Advanced Electromagnetic Energy Sources     頁: 231 - 234   2005年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    DOI: 10.1016/B978-008044504-5/50047-7

    Scopus

  167. Size and energy distribution of gas cluster ion beam measured by energy resolved time of flight mass spectroscopy

    Kakuta S, Seki T, Sasaki S, Furusawa K, Aoki T, Matsuo J

    SURFACE & COATINGS TECHNOLOGY   196 巻 ( 1-3 ) 頁: 198 - 202   2005年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Surface and Coatings Technology  

    Energy resolved time of flight (ERTOF) mass spectroscopy has been developed to measure the energy and size distributions in a gas cluster ion beam (GCIB). Gas cluster ions, being aggregates of a few to several thousands of atoms, were generated by the ionization of neutral clusters, which were created by the adiabatic expansion of a high pressure gas into a vacuum. As a result of the large cross section of cluster ions, the cluster size can be easily reduced by collision with fast neutrals and monomer ions. An ERTOF system consisted of a retarding grid in front of a drift tube with a pair of deflection electrodes that acted as a gate. This system was attached to an ionization chamber, where Ar gas clusters, generated by a nozzle in a source chamber, were ionized by electron impact. Current waveforms were measured with ERTOF as an increasing voltage was applied to the retarding grid. The size distribution of clusters having a particular kinetic energy was calculated from the difference in the current waveform obtained at a corresponding retarding voltage to that at a larger voltage. Using ERTOF, it was found that the GCIB consisted of two components; small sized clusters with low kinetic energy and large sized clusters with high kinetic energy. It was also noted that the depth to which a substrate, on which the cluster beam impinged, was etched increased with the proportion of large clusters to the GCIB, since the small clusters, resulting from disintegration of large sized clusters by collisions with monomer ions, fast neutrals and residual gas molecules, have too low a kinetic energy to remove atoms from the surface. Note that the etched depth was affected by both the energy and size distribution of cluster ions. Therefore, ERTOF measurement could be utilized to assure the reproducibility of processes for the manufacture of semiconductors and magnetic recording heads. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2004.08.129

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  168. Low damage smoothing of magnetic materials using oblique irradiation of gas cluster ion beam

    Kakuta S., Sasaki S., Furusawa K., Seki T., Aoki T., Matsuo J.

    Materials Research Society Symposium Proceedings   843 巻   頁: 183 - 188   2005年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium Proceedings  

    Oblique irradiation using a gas cluster ion beam (GCIB) has been studied in order to achieve low-damage smoothing of magnetic materials. We investigated how the surface morphology and surface roughness depended on the angle of incidence. Quite smooth surfaces could be obtained using both normal and grazing-incidence irradiation. At incident angles larger than 45°, periodic ripples were formed. The orientation of the ripples changed from perpendicular to parallel with respect to the GCIB when the incident angle exceeded a critical value. Surface roughening resulting from the formation of ripples was observed at incident angles between 45° and 65°. Fluctuations in the Ni/Fe component ratio and the intermixing of oxygen from the native oxide were evaluated. As the angle of incidence increased, both the thickness of the layer in which the component ratio was fluctuating and the depth of oxygen intermixing decreased. As a result, it was determined that low-damage smoothing of magnetic materials could be performed by using grazing-incidence irradiation from a GCIB. © 2005 Materials Research Society.

    Scopus

  169. Molecular dynamics study of suface structure and sputtering process by sequencial fluorine cluster impacts

    Aoki T., Matsuo J.

    Materials Research Society Symposium Proceedings   843 巻   頁: 189 - 194   2005年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium Proceedings  

    In order to study the surface reaction process under cluster ion impact, molecular dynamics simulations of sequential cluster impacts of fluorine and neon clusters were performed. (F2).300 and Ne 600 clusters were accelerated with totally 6keV and irradiated on bare Si(100) target. By iterating impact simulation sequentially, change of surface morphology and composition of desorbed materials were studied. In the case of fluorine cluster impact, the rough surface structure was made compared with neon cluster impact because fluorine atoms adsorb on the target, which work to keep pillar structure on the surface, whereas Ne atoms evaporate immediately leaving spherical mound structure on the surface. From the study of desorption process, it was observed that large number of Si atoms are desorbed in the form of silicon fluorides. The major sputtered material was SiF2, but various types of silicon-fluorides, including the molecules consists of several tens to hundreds silicon and fluorine atoms, were observed. The distribution of clusters in desorbed materials obeyed the classical model of cluster emission from quasi-liquid phase excited with ion bombardment. From these results, the irradiation effects of reactive cluster ions were discussed. © 2005 Materials Research Society.

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  170. A Comparison of Ions with Neutrals Emitted from Semiconductors Bombarded by MeV Si Ions 査読有り 国際誌

    Yoshihiko Nakata, Satoshi Ninomiya, Takaaki Aoki, Hidetsugu Tsuchida, Jiro Matsuo, Akio Itoh

    Transactions of the Materials Research Society of Japan   30 巻 ( 3 ) 頁: 797 - 800   2005年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:The Materials Research Society of Japan  

  171. Secondary neutral and ionized particle measurements under MeV-energy ion bombardment

    Nakata Y, Ninomiya S, Imada C, Nagai M, Aoki T, Matsuo J, Imanishi N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   230 巻 ( 1-4 ) 頁: 489 - 494   2005年4月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    We have measured both secondary neutral and ionized particles from an InSb target under 3.0 MeV Si ion bombardment. Measurements of both ions and neutrals have not been carried out so far in the MeV-energy range. The mass spectra and axial emission energy distributions of secondary particles were investigated. Secondary ions were measured with a linear- and a reflective-type time-of-flight technique, whereas secondary neutral particles were photo-ionized by a UV pulsed laser (ArF: 193 nm) and measured with a reflective-type time-of-flight technique. Different results were obtained for neutral particles in comparison with ionized particles. The mean energy of neutral Sb atoms was much lower than that of neutral In atoms, whereas the mean energies of secondary In and Sb ions were nearly equal. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.12.089

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  172. Total sputtering yields of solids under MeV-energy Si ion bombardment

    Ninomiya S, Imada C, Nagai M, Nakata Y, Aoki T, Matsuo J, Imanishi N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   230 巻 ( 1-4 ) 頁: 483 - 488   2005年4月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Total sputtering yields have been measured for SiO2 and Cu targets bombarded with Si ions at an incident energy between 500 keV and 5.0 MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have developed a beam modulation technique to avoid the effect of thermal drift. In the MeV energy range, an ion penetrates through thin SiO2 and Cu targets and is implanted into a quartz crystal. Therefore, the thickness of these layers deposited on quartz crystals was carefully controlled to avoid damage of quartz crystal by incident ions. As a result, total sputtering yields of SiO2 increased with incident Si ion energy, while those of the Cu target decreased. The total yields of the SiO2 target were represented well by a power low of the electronic stopping power. © 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.12.088

    Web of Science

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  173. Molecular dynamics simulations of sequential cluster ion impacts 国際誌

    Aoki T, Matsuo J

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   228 巻 ( 1-4 SPEC. ISS. ) 頁: 46 - 50   2005年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of cluster and solid target collisions were performed in order to understand the relationship between surface deformation processes and cluster sizes. MD simulations of single impacts of clusters with various sizes showed that, when a cluster size is less than 10 000 atoms, a crater-like damage could be caused at 20 keV of total energy, while no damage was observed at Ar 10 000 and Ar 20 000 clusters. The surface morphology change was examined by MD of sequential irradiation of Ar clusters under various conditions. When the initial roughness of the surface was about 10 Å in r.m.s. and the total incident energy was 20 keV, the surface roughness was reduced with the impact of Ar 13 333 or larger cluster. The MD results give information about the final value and decay speed of surface roughness, which are required to optimize the cluster ion irradiation condition for various nano-scale modification processes. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.10.021

    Web of Science

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  174. Low damage smoothing of magnetic materials using oblique irradiation of gas cluster ion beam 査読有り 国際誌

    Kakuta S, Sasaki S, Furusawa K, Seki T, Aoki T, Matsuo J

    Surface Engineering 2004 - Fundamentals and Applications   843 巻   頁: 183 - 188   2005年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  175. Molecular dynamics study of suface structure and sputtering process by sequencial fluorine cluster impacts 査読有り 国際誌

    Aoki T, Matsuo J

    SURFACE ENGINEERING 2004 - FUNDAMENTALS AND APPLICATIONS   843 巻   頁: 189 - 194   2005年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  176. Molecular dynamics study of suface structure and sputtering process by sequencial fluorine cluster impacts 査読有り

    T Aoki, J Matsuo

    Surface Engineering 2004 - Fundamentals and Applications   843 巻   頁: 189 - 194   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    In order to study the surface reaction process under cluster ion impact, molecular dynamics simulations of sequential cluster impacts of fluorine and neon clusters were performed. (F-2)(300) and Ne-600 clusters were accelerated with totally 6keV and irradiated on bare Si(100) target. By iterating impact simulation sequentially, change of surface morphology and composition of desorbed materials were studied. In the case of fluorine cluster impact, the rough surface structure was made compared with neon cluster impact because fluorine atoms adsorb on the target, which work to keep pillar structure on the surface, whereas Ne atoms evaporate immediately leaving spherical mound structure on the surface. From the study of desorption process, it was observed that large number of Si atoms are desorbed in the form of silicon fluorides. The major sputtered material was SiF2, but various types of silicon-fluorides, including the molecules consists of several tens to hundreds silicon and fluorine atoms, were observed. The distribution of clusters in desorbed materials obeyed the classical model of cluster emission from quasi-liquid phase excited with ion bombardment. From these results, the irradiation effects of reactive cluster ions were discussed.

    DOI: 10.1557/proc-843-t5.7

    Web of Science

  177. A new secondary ion mass spectrometry (SIMS) system with high-intensity cluster ion source 査読有り 国際誌

    Matsuo J, Okubo C, Seki T, Aoki T, Toyoda N, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   219 巻 ( 1-4 ) 頁: 463 - 467   2004年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1 mm at the target position, and a current density of 10 μA/cm2 is obtained. The etch rate of Si with this current density is more than 20 nm/min, which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. A threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering experiments. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.01.103

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  178. 低温プロセスを用いたCdTeピクセル高エネルギー放射線検出器の作製

    中村 篤志, Niraula Madan, 畑中 義式, 石田 悠, 坂下 大祐, 青木 徹, 天明 二郎

    放射線   30 巻 ( 2 ) 頁: 127 - 133   2004年4月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:応用物理学会放射線分科会  

  179. Surface structure dependence of impact processes of gas cluster ions 国際誌

    Aoki T, Matsuo J

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   216 巻 ( 1-4 ) 頁: 185 - 190   2004年2月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of Ar cluster impacts on Si surfaces were performed in order to examine the evolution of surface morphology with cluster irradiations. The MD results revealed that the impact process of cluster is different depending on surface structure around the impact point. When a large cluster, which consists of several thousands atoms and is accelerated with several tens keV, impacts on a plane surface, large number of surface atoms were moved simultaneously and a crater-like shape was left on the surface. On the other hand, the impacts on surface with nano-scale peak and valley structure showed that the impact processes of cluster ions are different depending on the local morphology of the impact points. When a cluster impacts close to a peak, the hill structure is made flat and the surface atoms constitute the hill are moved away and deposited on the valley. At the impact on valley region, however, incident cluster atoms concentrate in the bottom of the valley, which causes a crater-like structure with narrower opening and deeper hole compared with that at plain surface. The change of surface roughness have shown that, when a surface structure has similar scale with the area where the surface is deformed by cluster impact, the surface roughness decreases or increases depending on the impact point. This result indicates that the final state of surfaces roughness and morphology can be estimated. © 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2003.11.077

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  180. Experimental study of cluster size effect with size-selected cluster ion beam system 査読有り 国際誌

    Toyoda N, Houzumi S, Aoki T, Yamada I

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS   792 巻   頁: 623 - 628   2004年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  181. Fast neutral Ar penetration during gas cluster ion beam irradiation into magnetic thin films 査読有り 国際誌

    Kakuta S, Seki T, Sasaki S, Furusawa K, Aoki T, Matsuo J

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS   792 巻   頁: 599 - 604   2004年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  182. Molecular dynamics study of surface morphological evolution by cluster impacts 査読有り 国際誌

    Aoki T, Matsuo J, Yamada I

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS   792 巻   頁: 497 - 502   2004年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  183. Molecular Dynamics Study Of Surface Morphological Evolution By Cluster Impacts 査読有り

    Takaaki Aoki, Jiro Matsuo, Isao Yamada

    MRS Proceedings   792 巻   頁: 497 - 502   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    In order to understand the characteristics of surface modification process with cluster ion irradiation, molecular dynamics simulations of Ar cluster impacting on Si surface with various surface structures were carried out. It was found that the surface morphology is dynamically deformed with only one cluster impact and the impact process of cluster is different depending on the local surface structure. For example, when an Ar2000 cluster accelerated with 20keV impacted on the convex point of the surface, the hill was compressed and the impact area was smoothed. At the impact on a concave point, a deeper crater was formed compared with the impact on a flat surface. On the other hand, the MD simulations of sequential impacts of large clusters were performed. It was found that the small tip structures on the surface could be removed easily with cluster irradiation. It was shown that surface roughness converges to 15-20Å and this value agrees with the result obtained by single impact of cluster.

    DOI: 10.1557/proc-792-r4.7

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  184. Molecular effect on projected range in ultralow-energy ion implantation

    Kimura K, Oota Y, Nakajima K, Suzuki M, Aoki T, Matsuo J, Agarwal A, Freer B, Stevenson A, Ameen M

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   211 巻 ( 2 ) 頁: 206 - 210   2003年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Silicon wafers of (100) orientation are implanted with 3 keV As + or 6 keV As2+ ions at room temperature with fluences 1 × 1014-4 × 1014 atoms cm -2. The depth profiles of implanted As are measured by high-resolution Rutherford backscattering spectroscopy. The observed projected range for As2+ implantation is larger than that for As+ by several percent, showing a molecular effect on the projected range. © 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)01249-7

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  185. クラスターイオン衝突における非線形照射効果とそのプロセス応用

    松尾 二郎, 瀬木 利夫, 青木 学聡

    高温学会誌   29 巻 ( 5 ) 頁: 201 - 206   2003年9月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:高温学会  

  186. Study of Cluster-size Effect on Damage Formation

    Aoki T., Seki T., Nakai A., Matsuo J., Takaoka G.

    AIP Conference Proceedings   680 巻   頁: 741 - 744   2003年8月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Conference Proceedings  

    Computer simulation and experiments were performed in order to understand the effect of cluster size on damage formation. Results of molecular dynamics simulations of cluster impact on solid targets derived the model function, which explains the relationship among cluster size, incident energy and number of displacements. On the other hand, time of flight mass measurement system was installed a cluster irradiation system, so that cluster ion beam which cluster size distribution is well known can be irradiated on the target. The damage properties under various cluster irradiation conditions were examined using RBS. The results from computer simulations and experiments showed good agreements with each other, which suggests that irradiation damage by cluster ion beam can be controlled by selecting cluster size distribution and incident energy.

    DOI: 10.1063/1.1619820

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  187. Atomistic study of cluster collision on solid surfaces 国際誌

    Matsuo J., Seki T., Aoki T., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   206 巻   頁: 838 - 841   2003年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    New surface modification processes have been demonstrated using gas cluster ion irradiations, because of the unique interaction between cluster ions and surface atoms, atomistic mechanisms of cluster ion bombardment must be understood for the further developments of this technology. Variable temperature scanning tunneling microscope in ultra high vacuum allows us to study ion bombardment effects on surfaces and nucleation growth at various temperatures. In the STM image of cluster-irradiated surface, large craters with diameter of about 10 nm were observed on Si(1 1 1)7 × 7 surfaces. The structure and size of the traces agree well with theoretical calculation. When the sample irradiated with Ar cluster was annealed at 600 °C, the hole remained, but the outer rim of the crater disappeared and the surface structure was reconstructed at the site of the rim. The depth of damage region in the target became shallower with decrease of the impact energy. These results indicate that low damage and useful surface modification can be realized using the cluster ion beam. © 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00874-7

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  188. Defect characteristics by boron cluster ion implantation 国際誌

    Aoki T, Matsuo J, Takaoka G, Toyoda N, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   206 巻   頁: 855 - 860   2003年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Cluster ion implantation using decaborane (B10H14) has been proposed as a shallow implantation technique for LSI devices with gate lengths of several-tens nanometers. Experiments and computer simulations of low-energy boron monomers and decaborane clusters implantation were performed. Molecular dynamics simulations of B10 cluster implantation have shown similar implant depth but different damage density and damage structure compared to monomer (B1) ion implantation with the same energy-per-atom. For monomer implantation, point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand, B10 generates large numbers of defects within a highly-amorphised region at the impact location. This difference in damage structure produced during implantation is expected to cause different annihilation processes. © 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00878-4

    Web of Science

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  189. Cluster species and cluster size dependence of damage formation by cluster ion impact 国際誌

    Aoki T., Matsuo J., Takaoka G., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   206 巻   頁: 861 - 865   2003年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics simulations of Ne, Ar and Xe clusters with various sizes impacting on Si surfaces were performed in order to study damage formation processes. When cluster size ranged from several tens to several thousands and accelerated energy is 20 keV in total, each cluster impact caused surface damage in the shape of a crater. A larger number of displacements was found with the Xe cluster than Ne and Ar clusters of the same cluster size because the Xe cluster had a larger mass and momentum. However, when cluster size exceeded several thousands, different surface damage structures were formed depending on the cluster species. At a cluster size of 10,000, for example, a crater-like trace was still formed with a Ne cluster impact. However, both the depth of the crater and the number of displacements decreased as the atomic number of the cluster atom increased, which meant that the atomic and energy density irradiated on the surface is a dominant parameter in causing surface damage. These results indicate that the damage formation by cluster impact can be controlled by changing the cluster species as well as the incident energy and cluster size. © 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00879-6

    Web of Science

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  190. Modeling of surface smoothing process by cluster ion beam irradiation 国際誌

    Nakai A., Aoki T., Seki T., Matsuo J., Takaoka G.H., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   206 巻   頁: 842 - 845   2003年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Smoothing effect is one of the advantages of cluster ion beam. It is important to estimate an ion dose to achieve required surface smoothness. The smoothing rate with cluster ion beam depends on surface profiles. In this work, modeling of surface smoothing process with cluster ion beams was examined. Ar cluster ions with an energy of 20 keV was irradiated on rough Si Surface. Fast Fourier transform was applied to atomic force microscope data of 100 × 100 μm2, and power spectra were calculated. Smoothing rate depends on the wave number as well as the ion dose. Relationship between smoothing rate and wave number was derived. The surface smoothing process was modeled with the use of the wave number dependence of the smoothing rate. The calculated and the experimental surface profiles are in good agreements. © 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00875-9

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  191. Molecular dynamics study of damage formation characteristics by large cluster ion impacts 査読有り 国際誌

    Aoki T, Matsuo J, Takaoka G

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   202 巻   頁: 278 - 282   2003年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics simulations of various Ar clusters, with the size ranging 1-50,000 and the energy up to totally 50 keV, impacting on Si surfaces were performed. The cluster size and incident energy dependence on damage formation was examined. Two cluster-size depending parameters, the threshold energy to cause displacements and displacement yield, were proposed and modeled. These two parameters showed non-linearity depending on cluster size. The model function using above parameters reproduced the characteristics of damage formation by cluster ion impact. Two specific cluster sizes to cause maximum and no displacements on the surface were discussed, which is expected to provide useful information about optimized cluster ion beam conditions for various surface modification and thin-film formation processes. © 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(02)01869-4

    Web of Science

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  192. Secondary ion mass spectrometry with gas cluster ion beams 査読有り 国際誌

    Toyoda N, Matsuo J, Aoki T, Yamada I, Fenner DB

    APPLIED SURFACE SCIENCE   203 巻   頁: 214 - 218   2003年1月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  193. Secondary ion mass spectrometry with gas cluster ion beams

    Toyoda N., Matsuo J., Aoki T., Yamada I., Fenner D.B.

    Applied Surface Science   203-204 巻   頁: 214 - 218   2003年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Surface Science  

    Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. From MD simulations of Ar cluster ion impact on a Si substrate, the ion beam mixing by a cluster ion was heavier than that by Ar + at the same energy per atom, because the energy density at the impact point by clusters was extremely high. However, the sputtering yield with an Ar cluster ion was one or two orders of magnitude higher than that with Ar + at the same energy per atom. Comparing at the ion energy where the altered layer thickness was the same by both Ar cluster and Ar + impact, a cluster ion showed almost 10 times higher sputtering yield than Ar + . Preliminary experiment was performed with a conventional SIMS detector and a mass resolution of several nanometer was achieved with Ar cluster ions as a primary ion beam. © 2002 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0169-4332(02)00628-1

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  194. Study of cluster-size effect on damage formation 査読有り 国際誌

    Aoki T, Seki T, Nakai A, Matsuo J, Takaoka G

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY   680 巻   頁: 741 - 744   2003年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  195. Threshold energy for generating damage with cluster ion irradiation 査読有り 国際誌

    Seki T, Aoki T, Nakai A, Matsuo J, Takaoka GH

    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS   749 巻   頁: 335 - 340   2003年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  196. Study of surface morphological evolution by cluster ion irradiation on solid targets 査読有り 国際誌

    Aoki T, Nakai A, Matsuo J, Takaoka G

    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS   749 巻   頁: 311 - 316   2003年

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    掲載種別:研究論文(学術雑誌)  

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  197. Study of damage formation by low-energy boron cluster ion implantation 査読有り 国際誌

    Aoki T, Matsuo J, Takaoka G

    IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS     頁: 560 - 563   2003年

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    掲載種別:研究論文(学術雑誌)  

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  198. クラスターイオン衝突における非線形照射効果とそのプロセス応用 査読有り

    松尾 二郎, 瀬木 利夫, 青木 学聡

    高温学会誌   29 巻 ( 5 )   2003年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:高温学会  

  199. Fast neutral Ar penetration during gas cluster ion beam irradiation into magnetic thin films

    Kakuta S., Seki T., Sasaki S., Furusawa K., Aoki T., Matsuo J.

    Materials Research Society Symposium - Proceedings   792 巻   頁: 599 - 604   2003年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Ar penetration during gas cluster ion beam (GCIB) irradiation has been investigated using secondary ion mass spectroscopy (SIMS). The concentration of Ar rose to a maximum and then decreased gradually with increasing depth. The depth of the Ar penetration peak increased in proportion to the cube root of the acceleration voltage of GCIB and was independent of ion dose. Ar penetration was attributed to fast neutrals in the GCIB and was successfully suppressed by decreasing the pressure of the space downstream of the GCIB or decreasing the monomer ion density in order to suppress charge transfer collisions.

    DOI: 10.1557/proc-792-r9.36

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  200. Experimental study of cluster size effect with size-selected cluster ion beam system

    Toyoda N., Houzumi S., Aoki T., Yamada I.

    Materials Research Society Symposium - Proceedings   792 巻   頁: 623 - 628   2003年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    A size-selected gas cluster ion beam (GCIB) system has been developed to study the size effects of energetic large cluster ion bombardments on a solid surface for the first time. This system equipped a permanent magnet with a magnetic flux density of 1.2 T. There is a sliding detector and sample holder on a guiding rail perpendicular to the incoming cluster beam axis. By locating a sample at a certain position, particular size of cluster ion can be irradiated continuously with affordable ion current density. When the total acceleration energy of Ar-GCIB was 5keV, both amorphous and oxide thickness on Si substrate increased with decreasing cluster size. This result showed good agreement with that obtained from molecular dynamics simulations.

    DOI: 10.1557/proc-792-r10.8

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  201. 低エネルギーホウ素イオン注入におけるホウ素の蓄積・脱離過程のシミュレーション

    青木 学聡, 松尾 二郎, 高岡 義寛

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   102 巻 ( 540 ) 頁: 25 - 28   2002年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人電子情報通信学会  

    次世代以降の微小CMOSデバイスの作製には,エネルギーが数百eVという低エネルギーイオン注入が必要となる.しかしながら,入射エネルギーの低下によりイオンの注入レンジが低下すると,入射イオン種の表面への析出やセルフスパッタリング等が生じ,実効的なイオンドーズ量の低下や,ドーズ量の制御が困難になるといわれている.今回,入射イオンの蓄積・脱離過程を調べるために,ホウ素イオンを連続的にシリコン表面に注入する分子動力学シミュレーションを行った.

  202. Secondary ion mass spectrometry with gas cluster ion beams 査読有り 国際誌

    Toyoda N, Matsuo J, Aoki T, Yamada I, Fenner DB

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   190 巻   頁: 860 - 864   2002年5月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  203. Secondary ion mass spectrometry with gas cluster ion beams 査読有り

    Toyoda N., Matsuo J., Aoki T., Yamada I., Fenner D.B.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   190 巻 ( 1-4 ) 頁: 860 - 864   2002年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Secondary ion mass spectrometry (SIMS) with gas cluster ion beams was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. For this purpose, it is important to prevent both ion mixing and the surface roughening due to energetic ions. As the Ar cluster ion beams shows high secondary ion yield and surface smoothing effects in the low-energy regime, it is suitable for the primary ion beam of SIMS. From MD simulations of Ar cluster ion impact on Si, ion mixing is heavier than than those for Ar monomer ions at the same energy per atom, because the energy density at the impact point is extremely high. However, the sputtering yields with Ar cluster ions are one or two orders of magnitude higher than that with Ar monomer ions at the same energy per atom. Comparing at the ion energy where the ion-mixing depths are the same by both Ar cluster and Ar monomer ions, cluster ions show almost 10 times higher sputtering yield than by Ar monomer ions. A preliminary experiment of SIMS with Ar cluster ion was performed and a mass resolution of several nm was achieved for a Ta film. © 2002 Published by Elsevier Science B.V.

    DOI: 10.1016/S0168-583X(02)00463-9

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  204. Threshold Energy for Generating Damage with Cluster Ion Irradiation

    Seki T., Aoki T., Nakai A., Matsuo J., Takaoka G.H.

    Materials Research Society Symposium - Proceedings   749 巻   頁: 335 - 340   2002年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    In order to understand the damage formation by cluster ion irradiation, Si substrates were irradiated with Ar cluster ions at the acceleration energy of 1-20keV. The mean size of cluster was about 3000 atoms. The amount of damage after Ar cluster ion irradiation was measured with Rutherford backscattering spectrometry (RBS). The amount of damage was decreased with decrease of the energy and no damage formed at less than 2keV. This energy of 2keV represents the threshold energy to generate damage with the cluster size of 3000. According to Molecular dynamics (MD) simulation, the damage formation with cluster ion irradiation also depends on cluster size. The size dependence of amount of damage has been investigated experimentally. The cluster size distribution could be changed with the ionization condition and could be measured using Time-of-Flight (TOF) method. The threshold energy was increased with cluster size. These results indicate that undamaged films can be created by using large size of cluster ion with low acceleration energy.

    DOI: 10.1557/proc-749-w17.13

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  205. Study of damage formation by low-energy boron cluster ion implantation

    Aoki T., Matsuo J., Takaoka G.

    Proceedings of the International Conference on Ion Implantation Technology   22-27-September-2002 巻   頁: 560 - 563   2002年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    Cluster ion implantation using small boron cluster, decaborane (B10H14), has been proposed as the solution for shallow junction formation. Investigation of damage formation process by low-energy ion impact is important issue because diffusion and activation mechanism of dopant depend on the structure of defects in the substrate. In order to study difference of damage characteristics between monomer and cluster implantation, the molecular dynamics simulation of low-energy boron monomer and cluster (such like B4, B8 and B10) implantation into silicon substrate were performed. Additionally damage induced by boron monomer and cluster ion beam implantation is examined using RBS channeling method. From both simulation and experimental results, the amount and structure of defects caused by boron monomer/cluster implantation were discussed.

    DOI: 10.1109/IIT.2002.1258066

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  206. Study of Surface Morphological Evolution by Cluster Ion Irradiation on Solid Targets

    Aoki T., Nakai A., Matsuo J., Takaoka G.

    Materials Research Society Symposium - Proceedings   749 巻   頁: 311 - 316   2002年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Smoothing effect by large gas cluster ion irradiation was studied. Ar cluster ion beams were irradiated on rough Si surface with various ion dosage. 100×100μm2 AFM image was measured for each surface. These AFM images were treated with fast Fourier transform in order to examine the change of surface morphologies with cluster ion irradiation. Power spectra analysis showed that the intensity at each wave number (the inverse number of wavelength) exponentially decreases with ion dose. The relationship between smoothing rate and wave number was derived. The surface smoothing process was modeled with the use of this wave number dependence on decreasing rate. The calculated and the experimental surface profiles are in good agreements. With this model, roughness of cluster-irradiated surface can be calculated from initial surface images.

    DOI: 10.1557/proc-749-w17.9

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  207. Cluster size effect on reactive sputtering by fluorine cluster impact using molecular dynamics simulation 査読有り 国際誌

    Aoki T, Matsuo J, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 164 - 170   2001年6月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  208. Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation 査読有り 国際誌

    Aoki T, Chiba S, Matsuo J, Yamada I, Biersack JP

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 312 - 316   2001年6月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  209. Molecular dynamics simulation of fluorine ion etching of silicon 査読有り 国際誌

    Chiba S, Aoki T, Matsuo J

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 317 - 321   2001年6月

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    掲載種別:研究論文(学術雑誌)  

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  210. Cluster size effect on reactive sputtering by fluorine cluster impact using molecular dynamics simulation 査読有り

    T Aoki, J Matsuo, Yamada, I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 164 - 170   2001年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    The mechanism of high-yield sputtering induced by reactive cluster impact was investigated using molecular dynamics (MD) simulations. Various sizes of fluorine clusters were radiated on clean silicon surface. At an incident energy of 1 eV/atom. F atom and F-2 molecule are only adsorbed on the surface and sputtering of Si atom does not occur. However, fluorine cluster. which consists of more than several tens molecules causes sputtering. In this case, most of Si atoms are sputtered as fluorinated material such as SiFx. This effect is due to the fact that cluster impact induces high-density particle and energy deposition, which enhances both formation of precursors and desorption of etching products. The deposition of atoms and energy becomes denser as the incident cluster size increases, so that larger clusters have shown higher sputtering yield. (C) 2001 Elsevier Science B.V. All rights reserved.

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  211. Cluster size effect on reactive sputtering by fluorine cluster impact using molecular dynamics simulation

    Aoki T., Matsuo J., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   180 巻 ( 1-4 ) 頁: 164 - 170   2001年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The mechanism of high-yield sputtering induced by reactive cluster impact was investigated using molecular dynamics (MD) simulations. Various sizes of fluorine clusters were radiated on clean silicon surface. At an incident energy of 1 eV/atom, F atom and F2 molecule are only adsorbed on the surface and sputtering of Si atom does not occur. However, fluorine cluster, which consists of more than several tens molecules causes sputtering. In this case, most of Si atoms are sputtered as fluorinated material such as SiFx. This effect is due to the fact that cluster impact induces high-density particle and energy deposition, which enhances both formation of precursors and desorption of etching products. The deposition of atoms and energy becomes denser as the incident cluster size increases, so that larger clusters have shown higher sputtering yield. © 2001 Elsevier Science B.V.

    DOI: 10.1016/S0168-583X(01)00413-X

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  212. Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation 査読有り

    T Aoki, S Chiba, J Matsuo, Yamada, I, JP Biersack

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 312 - 316   2001年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Molecular dynamics (MD) and Monte-Carlo (MC) simulations of low-energy (&lt; 500 eV) Ar ion irradiation on Si substrates were performed in order to investigate the mixing and sputtering effects. Both MD and MC simulation show similar results in sputtering yield. depth profile of projectile and mixing of substrate. For these incident energies, the depth of the mixed region is determined by the implant range of incident ions. For example, when the incident energy is 500 eV, the Ar ions reach a depth of 40 Angstrom so that the Si atoms that reside shallower than 40 Angstrom are fully mixed at an ion dose of about 5.0 x 10(16) atoms/cm(2). The resolution of secondary ion mass spectrometry (SIMS) was also studied. It was found that the resolution of SIMS depends on the depth of mixing, which depends in turn on the implant range of the probe ions. This is because the mixing of substrate atoms occurs more frequently than sputtering, so that the information about the depth profile in the mixing region is disturbed. (C) 2001 Elsevier Science B.V. All rights reserved.

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  213. Molecular dynamics simulation of fluorine ion etching of silicon

    Chiba S., Aoki T., Matsuo J.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   180 巻 ( 1-4 ) 頁: 317 - 321   2001年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Formation of precursors and desorption of etching products by fluorine ion irradiation were studied using molecular dynamics (MD) simulation. When F atoms impact sequentially on a Si substrate, a mixed layer of F and Si atoms is formed on the surface. When the incident energy is below 30 eV, the fluorine coverage reaches steady state after 1.0 × 1016 atoms/cm2 irradiation. The ratio of F to Si in the mixed layer is about 1:1. At an incident energy of 15 eV, the mixed layer at steady state consists of 4.5 ML of fluorine with a depth of 20 Å and the main etching products are SiF3 and SiF4. At 30 eV incident energy, the mixed layer at steady state is 6.5 ML with a depth of 40 Å and the main etching products are SiF2 and SiF3. When F atoms were irradiated onto a Si substrate heated at 1000 K, a significant reduction of F coverage was observed due to diffusion of F atoms. © 2001 Elsevier Science B.V.

    DOI: 10.1016/S0168-583X(01)00438-4

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  214. Molecular dynamics simulation of fluorine ion etching of silicon 査読有り

    S Chiba, T Aoki, J Matsuo

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   180 巻   頁: 317 - 321   2001年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Formation of precursors and desorption of etching products by fluorine ion irradiation were studied using molecular dynamics (MD) simulation. When F atoms impact sequentially on a Si substrate, a mixed layer of F and Si atoms is formed on the surface. When the incident energy is below 30 eV, the fluorine coverage reaches steady state after 1.0 x 10(16) atoms/cm(2) irradiation. The ratio of F to Si in the mixed layer is about 1:1. At an incident energy of 15 eV, the mixed layer at steady state consists of 4.5 ML of fluorine with a depth of 20 Angstrom and the main etching products are SiF3 and SiF4. At 30 eV incident energy, the mixed layer at steady state is 6.5 ML with a depth of 30 A and the main etching products are SiF2 and SiF3. When F atoms were irradiated onto a Si substrate heated at 1000 K, a significant reduction of F coverage was observed due to diffusion of F atoms. (C) 2001 Elsevier Science B.V. All rights reserved.

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  215. Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation

    Aoki T., Chiba S., Matsuo J., Yamada I., Biersack J.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   180 巻 ( 1-4 ) 頁: 312 - 316   2001年6月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) and Monte-Carlo (MC) simulations of low-energy (<500 eV) Ar ion irradiation on Si substrates were performed in order to investigate the mixing and sputtering effects. Both MD and MC simulation show similar results in sputtering yield, depth profile of projectile and mixing of substrate. For these incident energies, the depth of the mixed region is determined by the implant range of incident ions. For example, when the incident energy is 500 eV, the Ar ions reach a depth of 40 Å so that the Si atoms that reside shallower than 40 Å are fully mixed at an ion dose of about 5.0 × 1016 atoms/cm2. The resolution of secondary ion mass spectrometry (SIMS) was also studied. It was found that the resolution of SIMS depends on the depth of mixing, which depends in turn on the implant range of the probe ions. This is because the mixing of substrate atoms occurs more frequently than sputtering, so that the information about the depth profile in the mixing region is disturbed. © 2001 Elsevier Science B.V.

    DOI: 10.1016/S0168-583X(01)00437-2

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  216. Molecular dynamics simulations of cluster ion implantation for shallow junction formation 査読有り 国際誌

    Aoki T, Takaoka JMG, Yamada I

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY   576 巻   頁: 967 - 970   2001年

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    掲載種別:研究論文(学術雑誌)  

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  217. Ar cluster ion bombardment effects on semiconductor surfaces

    Seki T., Tsumura K., Aoki T., Matsuo J., Takaoka G.H., Yamada I.

    Materials Research Society Symposium - Proceedings   647 巻   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    New surface modification processes have been demonstrated using gas cluster ion irradiations because of their unique interaction between cluster ions and surface atoms. For example, high quality ITO films could be obtained by O2 cluster ion assisted deposition at room temperature. It is necessary to understand the role of cluster ion bombardment during film formation for the further developments of this technology. Variable Temperature Scanning Tunneling Microscope (VT-STM) in Ultra High Vacuum (UHV) allows us to study ion bombardment effects on surfaces and nucleation growth at various temperatures. The irradiation effects between Ar cluster ion and Xe monomer ion were compared. When a Si(111) surface with Ge deposited to a few Å was annealed to 400°C, it was observed that many islands of Ge were formed. The surface with the Ge islands was irradiated by these ions. In the STM image of cluster-irradiated surface. large craters with diameter of about 100 Å were observed, while only small traces with diameter of about 20 Å were observed in monomer-irradiated surface. The number of Ge atoms displaced by one Ar cluster ion impact was much larger than that by one Xe ion impact. This result indicates that Ar cluster ion impacts can enhance the physical modification of Ge islands. When the sample irradiated with Ar cluster was annealed at 600°C, the hole remained, but the outer rim of the crater disappeared and the surface structure was reconstructed at the site of the rim. The depth of damage region in the target became shallower with decrease of the impact energy. These results indicate that low damage and useful surface modification can be realized using the cluster ion beam.

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  218. Characterization of damage induced by cluster ion implantation

    Aoki T., Matsuo J., Takaoka G.

    Materials Research Society Symposium - Proceedings   669 巻   頁: J451 - J456   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Molecular dynamics simulations of boron monomer and small clusters (B4 and B10) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact. These monomer and clusters show similar implant depth and efficiency, but different damage structures. At the impact of B monomer with 230eV of incident energy, some point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand B10 produces several times larger number of vacancies and interstitials compared with B1. This damage structure is different from one by B1 implantation and due to high yield amorphization of implanted region. This characteristic damage formation process is expected to cause different annihilation process.

    DOI: 10.1557/proc-669-j4.5

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  219. Molecular dynamics simulations of cluster ion impact on diamond surface

    Aoki T., Matsuo J., Takaoka G., Yamada I.

    Materials Research Society Symposium - Proceedings   650 巻   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Molecular dynamics (MD) simulations of various cluster ions impacting on solid targets were performed in order to examine the implant and damage formation processes. Ne and Ar rare gas cluster with various cluster sizes, and fullerene (C60) were impacted on diamond (001) surface. It was shown that the impact process of cluster ion depends on the cluster size. When the cluster size is small and incident energy-per-atom is high, such as Ar15 with 800eV/atom, all incident Ar atoms penetrate the surface and reside in the substrate. As the cluster size increases and the incident energy-per-atom decreases, the implant depth decreases and the profile of the displacement becomes shallower. A large cluster, such as Ar60 with 200eV/atom, shows a shallower implant depth and a higher sputtering yield than Ar15. However, Ar240 with 50eV/atom shows a shallower implant depth, but less sputtering yield than Ar60. These results suggest that there is proper cluster size and incident energy where the maximum sputtering yield is achieved.

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  220. Secondary ion mass spectrometry with gas cluster ion beams

    Toyoda N., Matsuo J., Aoki T., Chiba S., Yamada I., Fenner D.B., Torti R.

    Materials Research Society Symposium - Proceedings   647 巻   頁: O5.1.1 - O5.1.6   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Secondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. For this purpose, it is important to prevent both ion-mixing and the surface roughening due to energetic ions. As the Ar cluster ion beam shows surface smoothing effects and high secondary-ion yield in the low-energy regime, the cluster ion beam would be suitable for the primary ion beam of SIMS. From MD simulations of Ar cluster ion impact on a Si substrate, the ion-mixing is heavier than for Ar monomer ions at the same energy per atom, because the energy density at the impact point by clusters is extremely high. However, the sputtering yields with Ar cluster ions are one or two orders of magnitude higher than that with Ar monomer ions at the same energy per atom. Comparing at the ion energy where the ion-mixing depths are the same by both cluster and monomer ion impacts, cluster ions show almost ten times higher sputtering yield than Ar monomer ions. Preliminary experiment was done with a conventional SIMS detector and a mass resolution of several nm was achieved with Ar cluster ions as a primary ion beam. © 2001 Materials Research Society.

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  221. Secondary ion mass spectrometry with gas cluster ion beams

    Toyoda N., Matsuo J., Aoki T., Chiba S., Yamada I., Fenner D., Torti R.

    Materials Research Society Symposium - Proceedings   647 巻   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Secondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. For this purpose, it is important to prevent both ion-mixing and the surface roughening due to energetic ions. As the Ar cluster ion beam shows surface smoothing effects and high secondary-ion yield in the low-energy regime, the cluster ion beam would be suitable for the primary ion beam of SIMS. From MD simulations of Ar cluster ion impact on a Si substrate, the ion-mixing is heavier than for Ar monomer ions at the same energy per atom, because the energy density at the impact point by clusters is extremely high. However, the sputtering yields with Ar cluster ions are one or two orders of magnitude higher than that with Ar monomer ions at the same energy per atom. Comparing at the ion energy where the ion-mixing depths are the same by both cluster and monomer ion impacts, cluster ions show almost ten times higher sputtering yield than Ar monomer ions. Preliminary experiment was done with a conventional SIMS detector and a mass resolution of several nm was achieved with Ar cluster ions as a primary ion beam.

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  222. Photoluminescence study of defects induced by B<inf>10</inf>H<inf>14</inf> ions

    Toyoda N., Aoki T., Matsuo J., Yamada I., Wada K., Kimerling L.C.

    Materials Research Society Symposium - Proceedings   669 巻   頁: J4201 - J4206   2001年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Defect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperature annealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

    DOI: 10.1557/proc-669-j20.4

    Scopus

  223. Molecular dynamics simulations of cluster ion implantation for shallow junction formation 査読有り

    T Aoki, JMG Takaoka, Yamada, I

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY   576 巻   頁: 967 - 970   2001年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AMER INST PHYSICS  

    Cluster ion implantation is a useful technique for low energy implantation. In order to investigate the implant and damage formation by cluster ions, molecular dynamics simulations of boron monomer (B-1) and cluster with the size ranging from 2 (B-2) to 10 (B-10) impacting on silicon substrate were performed. When atom/clusters with the same energy per atom of 230eV/atom, all impacts show a similar implant profile, except for a vertical chain-like cluster with the size larger than 4. The latter finding is attributed to the clearing way effect. B-10 impact induces displacements several times larger than B-1; this is because the high-density particle and energy deposition by B-10 causes more knocked-on substrate atoms in the shallow substrate region and these knocked-on atoms tend to remain as displacements, an effect which is not observed in impacts of B-1. This higher displacement yield by B-10 is believed to avoid the formation of point defects at low ion dose and to suppress transient enhanced diffusion.

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  224. Molecular dynamics simulations of cluster ion impact on diamond surface

    Aoki T.

    Materials Research Society Symposium-Proceedings   650 巻   頁: [d]R3.40.1 - R3.40.1   2001年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium-Proceedings  

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  225. 分子動力学法を用いたFイオン照射によるSi表面エッチングのシミュレーション

    千葉 俊一, 青木 学聡, 松尾 二郎, 高岡 義寛

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   100 巻 ( 517 ) 頁: 23 - 28   2000年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人電子情報通信学会  

    反応性イオンエッチングにおいてイオン照射が果たす役割を解明するため, FイオンをSi表面に連続的に照射する分子動力学シミュレーションを行った.Fイオンの照射に伴い基板表面にSi原子とF原子の混合層が形成され, 一部がフッ化シリコン(Si_xF_y)として脱離した.平衡状態における基板表面やエッチング生成物が照射エネルギーの違いにより異なることが示され, 反応性イオンエッチングにおけるイオン照射の役割が明らかになった.

  226. Molecular dynamics simulation of fluorine cluster ion impact 査読有り 国際誌

    Aoki T, Matsuo J, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   164 巻   頁: 546 - 552   2000年4月

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    掲載種別:研究論文(学術雑誌)  

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  227. STM observation of surface vacancies created by ion impact 査読有り 国際誌

    Seki T, Aoki T, Matsuo J, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   164 巻   頁: 650 - 655   2000年4月

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    掲載種別:研究論文(学術雑誌)  

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  228. STM observation of surface vacancies created by ion impact 査読有り

    Seki T., Aoki T., Matsuo J., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   164 巻   頁: 650 - 655   2000年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The formation, structure and extinction of surface defects created at high temperature were observed with a variable temperature scanning tunneling microscope (VT-STM). A Si(1 1 1) 7×7 surface was irradiated with Xe+ ions and single ion impact traces of about 20 angstroms diameter were clearly observed with atomic resolution. The average size of the trace does not depend on the impact energy in the range from 1 to 5 keV. When the sample is annealed at 400 °C, the vacancies created in subsurface by the impact start to diffuse toward the surface and appear on the surface, but the interstitial atoms generated together with the vacancies remain in the bulk. At 600 °C, vacancy clusters are formed whose sizes correspond to the number of vacancies created near the surfaces. At 650 °C, the interstitial atoms diffuse and recombine with surface vacancies and the size of the vacancy cluster decreases with annealing time.

    DOI: 10.1016/S0168-583X(99)01112-X

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  229. Molecular dynamics simulation of fluorine cluster ion impact 査読有り

    T Aoki, J Matsuo, Yamada, I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   164 巻   頁: 546 - 552   2000年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Molecular dynamics (MD) simulations of fluorine atoms, molecules and clusters impacting a silicon substrate were performed in order to investigate the impact process of a reactive cluster ion. This result shows that when the incident energy of the impacting fluorine atom or molecule is less than 10 eV/atom, the species are only adsorbed on the surface and sputtering of substrate atoms does not occur. On the other hand, a fluorine cluster consisting of 30 molecules produces sputtering even at a low incident energy of 1 eV/atom. At these conditions, the surface atoms are desorbed as fluorine-containing species, such as SiF or SiF2, indicating that chemical desorption is enhanced by irradiation with fluorine clusters. As the incident energy of the cluster increases to values as high as 100 eV/atom, almost all the fluorine atoms penetrate the surface and a crater-shaped damage is formed. The incident F atoms reside at the bottom region of the crater. In this case, silicon atoms leave the surface as monomers, dimers or clusters without F atoms, i.e., in this regime physical sputtering through atomic collisions has a higher probability than chemical reactions, like in the case of Ne or Ar cluster impact. (C) 2000 Elsevier Science B.V.zd All rights reserved.

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  230. Nano-processing with gas cluster ion beams 査読有り

    Yamada I., Matsuo J., Insepov Z., Aoki T., Seki T., Toyoda N.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   164 巻   頁: 944 - 959   2000年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    This paper describes the fundamental principles and experimental status of gas cluster ion beam (GCIB) processing as a new technique with promise for practical industrial applications. A review is presented of the theoretical and experimental characteristics of new gas cluster ion bombardment processes and of related equipment development. The impacts of accelerated cluster ions upon substrate surfaces impart very high-energy densities in the impact regions of individual clusters and produce non-linear processes that are not present in the impacts of individual atomic ions. These unique bombardment characteristics are expected to facilitate new industrial applications that would not be possible by traditional ion beam processing. Among these are shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low-temperature thin film formation.

    DOI: 10.1016/S0168-583X(99)01163-5

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  231. Nano-processing with gas cluster ion beams

    Yamada I, Matsuo J, Insepov Z, Aoki T, Seki T, Toyoda N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   164 巻   頁: 944 - 959   2000年4月

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    掲載種別:研究論文(学術雑誌)  

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  232. Molecular dynamics simulation of fluorine cluster ion impact

    Aoki T., Matsuo J., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   164 巻   頁: 546 - 552   2000年4月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of fluorine atoms, molecules and clusters impacting a silicon substrate were performed in order to investigate the impact process of a reactive cluster ion. This result shows that when the incident energy of the impacting fluorine atom or molecule is less than 10 eV/atom, the species are only adsorbed on the surface and sputtering of substrate atoms does not occur. On the other hand, a fluorine cluster consisting of 30 molecules produces sputtering even at a low incident energy of 1 eV/atom. At these conditions, the surface atoms are desorbed as fluorine-containing species, such as SiF or SiF2, indicating that chemical desorption is enhanced by irradiation with fluorine clusters. As the incident energy of the cluster increases to values as high as 100 eV/atom, almost all the fluorine atoms penetrate the surface and a crater-shaped damage is formed. The incident F atoms reside at the bottom region of the crater. In this case, silicon atoms leave the surface as monomers, dimers or clusters without F atoms, i.e., in this regime physical sputtering through atomic collisions has a higher probability than chemical reactions, like in the case of Ne or Ar cluster impact.

    DOI: 10.1016/S0168-583X(99)01146-5

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  233. Boron diffusion in ultra low-energy (&lt;1 keV/atom) decaborane (B<inf>10</inf>H<inf>14</inf>) ion implantation

    Kusaba T., Shimada N., Aoki T., Matsuo J., Yamada I., Goto K., Sugii T.

    Proceedings of the International Conference on Ion Implantation Technology   2 巻   頁: 1258 - 1261   1999年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    High performance 40 nm p-MOSFETs with ultra shallow junction have been fabricated, using decaborane (B10H14) ion implantation. It has been experimentally demonstrated that ultra low-energy implantation of B10H14 in Si(100) at 2 keV does not cause the transient enhanced diffusion (TED) of boron atoms during annealing at 900 °C for 10 sec. In order to reveal the diffusion mechanism of B atoms, the diffusivity of B atoms in ultra low-energy B10H14 ion implantation was measured by Secondary Ion Mass Spectroscopy (SIMS). B10H14 ions were implanted at 2, 3, 5 and 10 keV. Subsequent annealing was performed at 900 °C and 1000 °C for 10 sec, respectively. In the case of 900 °C annealing, TED was suppressed as the implant energy decreased and at the energy less than 3 keV, the TED of B atoms no longer occurred during annealing. On the other hand, the diffusion behavior of B atoms during annealing at 1000 °C was independent of implant energy. In both cases of 900 °C and 1000 °C annealing, the diffusion of B atoms did not depend on implant dose at the dose of 1×1013-1014 ions/cm2. This is because an amorphous layer is already formed near the surface at the dose of 1×1013-1014 ions/cm2 and the amount of defects saturate over 1×1013 ions/cm2. The suppression of TED during annealing at 900 °C indicates that the ultra low-energy B10H14 ion implantation technique has advantages for ultra shallow junction formation.

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  234. Computer simulation of decaborane implantation and rapid thermal annealing

    Insepov Z., Aoki T., Matsuo J., Yamada I.

    Proceedings of the International Conference on Ion Implantation Technology   2 巻   頁: 807 - 810   1999年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.

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  235. Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

    Aoki T., Matsuo J., Insepov Z., Yamada I.

    Proceedings of the International Conference on Ion Implantation Technology   2 巻   頁: 1254 - 1257   1999年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    Cluster ion implantation using decaborane (B10H14) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed. B1, B4 and B10 are irradiated on Si (001) substrates with acceleration energy of 230 eV/atom so that B4 and B10 are accelerated with 0.92 keV and 2.3 keV, respectively. Those three show the same implant profile and implant efficiency, which agrees with the experimental result of B10H14 implantation. This result suggests that each B atom in a B cluster acts individually in similar way to a monomer ion. B clusters show the same properties in projection range and implant efficiency as the monomer whereas non-linearity is shown in damage formation. The number of displacements by one B atom once increases to the same maximum value for both a B cluster and a B monomer. However, the damage recovery process is different depending on the cluster size. Damage induced by B10 recovers more slowly and 4 times as many displacements remain compared to B1 8 ps after impact. These displacements by B10 clusters concentrate in the near surface region of the impact point, while the ones by B1 reside around the implanted B atom as the end-of-range damage. This characteristic damage formation by B10 cluster is expected to avoid transient-enhanced-diffusion of incident B atoms and achieve the formation of high-quality shallow p-type junction.

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  236. Cluster size dependence of the impact process on a carbon substrate

    Aoki T, Seki T, Matsuo J, Insepov Z, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   153 巻 ( 1-4 ) 頁: 264 - 269   1999年6月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  237. Cluster size dependence of the impact process on a carbon substrate 査読有り

    Aoki T., Seki T., Matsuo J., Insepov Z., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   153 巻 ( 1-4 ) 頁: 264 - 269   1999年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics simulations of various sizes of carbon molecule as clusters impacting a carbon substrate are performed in order to examine the size-dependence of the cluster ion on the impact process. Highly Oriented Pyrolitic Graphite (HOPG) was irradiated with C1, C4, C8, C19 and C60 clusters carrying the same energy-per-atom of 2 keV/ atom. When the cluster size is less than eight, interspersed damage is formed by the cascade-collision mechanism, whereas C19 and C60 impacts show homogeneously damaged regions in the surface of the substrate. In the case of large cluster ion impacts, all the incident energy of a cluster is deposited with high density in narrow region on the surface. These results show good agreement with experimental STM observations of single traces induced by the impact of C60 and small carbon molecules.

    DOI: 10.1016/S0168-583X(99)00201-3

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  238. Applications of cluster ion implantation in microelectronics devices 査読有り 国際誌

    Yamada I, Matsuo J, Toyoda N, Aoki T

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2   475 巻   頁: 379 - 382   1999年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  239. Novel analysis techniques using cluster ion beams 査読有り 国際誌

    Matsuo J, Toyoda N, Saito M, Aoki T, Seki T, Yamada I

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2   475 巻   頁: 429 - 432   1999年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  240. Applications of cluster ion implantation in microelectronics devices 査読有り

    Yamada, I, J Matsuo, N Toyoda, T Aoki

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2   475 巻   頁: 379 - 382   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AMER INST PHYSICS  

    Ultra-shallow ion implantation by gas cluster ion beams has been demonstrated experimentally and confirmed by molecular dynamics simulations. Implantation of B10H14 in Si (100) at 2keV does not cause transient enhanced diffusion (TED) of boron atoms during annealing at 900 degrees C for 10sec. In order to reveal the diffusion mechanism of B atoms, the diffusivity of B atoms in ultra low-energy B10H14 ion implantation was measured by Secondary Ion Mass Spectroscopy (SIMS). B10H14 ions were implanted at 2, 3, 5 and 10keV. Subsequent annealing was performed at 900 degrees C and 1000 degrees C for 10 sec, respectively. In the case of the 900 degrees C annealing, TED was suppressed as the implant energy decreased and at energy less than 3keV, the TED of B atoms no longer occurred during annealing. High performance 40nm p-MOSFETs with ultra shallow junctions have been fabricated using B10H14 cluster ion implantation. The unique characteristics of gas cluster ion beam processes for sputtering has also been applied to very high-rate etching. Yields more than two orders of magnitude higher than those by monomer ions having the same energy and atomic scale smoothing of surfaces to average roughness less than 0.2nm have been demonstrated. This paper will discuss the status of cluster ion beam processes based upon our recent experimental and molecular dynamics simulation results.

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  241. Molecular dynamics simulation of fullerene cluster ion impact

    Aoki T., Seki T., Tanomura M., Matsuo J., Insepov Z., Yamada I.

    Materials Research Society Symposium - Proceedings   504 巻   頁: 81 - 86   1999年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    In order to interpret the projection range and to reveal the mechanism of damage formation by cluster ion impact, molecular dynamics simulations of a fullerene carbon cluster (C60) impacting on diamond (001) surfaces were performed. When the kinetic energy of C60 is as low as 200 eV/atom, C60 implants into the substrate deeper than a monomer ion with the same energy per atom because of the clearing-way effect. The kinetic energy of the cluster disperses isotropically because of the multiple-collision effect, and then a large hemispherical damage region is formed. When the energy of the cluster is as high as 2 keV/atom, the cluster dissociates in the substrate, and then cascade damage is formed like in a case of a monomer ion impact. The projection range of incident atoms becomes similar to that of the monomer with the same energy per atom. However, the number of displacements of C60 is larger than the summation of 60 monomer carbons. The displacement yield of fullerene is 4 to 7 times higher than that of monomer carbon. This result agrees with the measurement of the displacements made on sapphire substrates with C60 and C2 irradiation.

    Scopus

  242. Size dependence of bombardment characteristics produced by cluster ion beams

    Seki T., Tanomura M., Aoki T., Matsuo J., Yamada I.

    Materials Research Society Symposium - Proceedings   504 巻   頁: 93 - 98   1999年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Cluster ion beam processes provide new surface modification techniques, such as surface smoothing, high rate sputtering and very shallow implantation, because of the unique interactions between cluster and surface atoms. To understand interactions with cluster and surface, Scanning Tunneling Microscope (STM) observations have been done for single impact traces. Highly Oriented Pyrolitic Graphite (HOPG) surfaces were bombarded by carbon cluster ions (Va≤300 kV), and large ridges and craters have been observed as a result of single cluster ion impact. The impact site diameters are proportional to the cluster size up to 10 atoms, and increase drastically for cluster sizes above 10. This indicates that non-linear multiple collisions occur only when a local area is bombarded by more than 10 atoms at the same time.

    Scopus

  243. デカボランイオン注入による損傷の形成とその増速拡散への影響

    草場 拓也, 瀬木 利夫, 青木 学聡, 松尾 二郎, 加勢 正隆, 後藤 賢一, 杉井 寿博, 山田 公

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   98 巻 ( 445 ) 頁: 97 - 104   1998年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人電子情報通信学会  

    低エネルギーデカボランイオン注入における損傷の形成とその増速拡散への影響について検討をおこなった。デカボランの注入エネルギーの低下に伴い、増速拡散は抑制される。また、3keVのデカボランイオン注入においてドーズ量1×10^14〜10^15atoms/cm^2の範囲では、基板表面近傍にアモルファス層が形成されているために、拡散距離は注入ドーズ量に依存しないことが明らかとなった。さらに、デカボランイオン注入においては、実効注入エネルギーの等しい単原子ボロンよりも多くの損傷を形成できることが分かった。約65%の注入効率が得られることが明らかとなった。

  244. Non-linear processes in the gas cluster ion beam modification of solid surfaces 査読有り 国際誌

    Yamada I, Matsuo J, Toyoda N, Aoki T, Jones E, Insepov Z

    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING   253 巻 ( 1-2 ) 頁: 249 - 257   1998年9月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  245. Non-linear processes in the gas cluster ion beam modification of solid surfaces 査読有り

    Yamada I., Matsuo J., Toyoda N., Aoki T., Jones E., Insepov Z.

    Materials Science and Engineering A   253 巻 ( 1-2 ) 頁: 249 - 257   1998年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Science and Engineering A  

    The unique characteristics of gas cluster ion beam processing are reviewed. Cluster ion beams consisting of hundreds to thousands of atoms have been generated from various kinds of gas materials. Multiple collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally non-linear bombarding processes. These bombarding characteristics can be applied to shallow ion implantation, high yield sputtering and smoothing, surface cleaning and low temperature thin film formation. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0921-5093(98)00733-3

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    Scopus

  246. Angular distributions of the particles sputtered with Ar cluster ions 査読有り 国際誌

    Toyoda N, Kitani H, Hagiwara N, Aoki T, Matsuo J, Yamada I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 262 - 265   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  247. Energy dependence of a single trace created by C-60 ion impact 査読有り 国際誌

    Seki T, Aoki T, Tanomura M, Matsuo J, Yamada I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 143 - 146   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  248. Low-temperature formation of perovskite PbTiO3 films by O-2 cluster ion-assisted deposition 査読有り 国際誌

    Akizuki M, Matsuo J, Qin W, Aoki T, Harada M, Ogasawara S, Yodoshi K, Yamada I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 255 - 257   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  249. Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation 査読有り 国際誌

    Shimada N, Aoki T, Matsuo J, Yamada I, Goto K, Sugui T

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 80 - 83   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  250. Angular distributions of the particles sputtered with Ar cluster ions 査読有り

    Toyoda N., Kitani H., Hagiwara N., Aoki T., Matsuo J., Yamada I.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 262 - 265   1998年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    This paper discusses angular distributions of sputtered particles from the target in cluster ion beam irradiation. For a copper target, the angular distribution of Cu particles with Ar cluster ion beams bombarding at a normal incidence was found to follow under-cosine law, whereas for Ar monomer ions the distribution follows the cosine law, as predicted from the linear cascade collision theory. From our molecular dynamics simulations, the sputtering mechanism with Ar cluster ions is as follows. At the impact of a cluster on a target a crater is formed. Numerous atoms acquire high lateral momentum and are ejected in the lateral direction. Subsequently, these particles cause an under-cosine distribution, and thus the behavior is drastically different from that with monomer ion bombardment. Experimental results show that the angular particle distribution is not strongly dependent on the incident angle above 10°, but is very sensitive to the incidence angle below that. Microscopic images of a trace observed with scanning tunneling microscopy (STM) reinforce these results. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00101-1

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  251. Energy dependence of a single trace created by C<inf>60</inf> ion impact 査読有り

    Seki T., Aoki T., Tanomura M., Matsuo J., Yamada I.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 143 - 146   1998年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    Cluster ion beams provide new surface modification processes, because of the unique interaction between cluster atoms and surface atoms. In order to reveal cluster-surface interaction, single traces formed by C60 ion impact on solid surfaces were investigated using scanning tunneling microscopy. Large hill shape traces and crater shape traces were observed on a highly oriented pyrolitic graphite surface irradiated by C60 ions. The crater formation by the C60 impact is an effect of high-density energy deposition and multiple-collision between cluster atoms and surface atoms. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00097-2

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  252. Cluster ion bombardment on atomically flat Au(111) solid surfaces

    Takeuchi D, Seki T, Aoki T, Matsuo J, Yamada I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 76 - 79   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  253. Cluster ion bombardment on atomically flat Au (111) solid surfaces 査読有り

    Takeuchi D., Seki T., Aoki T., Matsuo J., Yamada I.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 76 - 79   1998年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    Energetic cluster ion bombardment shows unique and complicated interactions between constituents of the cluster and atoms of the target surface. Scanning tunneling microscopy (STM) observation is one of the most powerful methods to investigate the cluster ion-solid surface interaction. We have observed crater-shape traces on highly oriented pyrolitic graphite (HOPG) surface bombarded by energetic Ar cluster ions. However, STM images of HOPG surfaces are influenced by special electronic surface states. In this paper, Ar monomer and cluster ions are bombarded on Au(111) surfaces on mica to observe ion traces by STM. In addition, the relationship between the parameters of cluster ion beams and the features of ion traces are discussed. The STM observation showed that Ar cluster ion bombardment had circular crater-like shapes, and their diameters were proportional to the cubic root of ion energy. These indicate that the kinetic energy of cluster ions is deposited on the surface isotropically. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00052-2

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  254. Low-temperature formation of perovskite PbTiO3 films by O-2 cluster ion-assisted deposition 査読有り

    M Akizuki, J Matsuo, W Qin, T Aoki, M Harada, S Ogasawara, K Yodoshi, Yamada, I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 255 - 257   1998年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE SA  

    The formation of PbTiO3 films on Pt films using O-2 cluster ions, Pb and Ti(i-OC3H7)(4), was examined. Perovskite-PbTiO3 films could be formed at a substrate temperature of 400 degrees C, which was about 100 degrees C lower than that which is possible with CVD and sol-gel methods. An acceleration energy of 1 keV was sufficient to form the perovskite structure. These films were obtained owing to a high oxidant Aux to the surface and high-density energy deposition during growth. Another feature of the O-2 cluster ion assisted deposition was that no pyrochlore structure was observed at lower substrate temperatures. This might be due to surface reactions in the high vacuum (3 X 10(-5) Torr). (C) 1998 Elsevier Science S.A. All rights reserved.

    Web of Science

  255. Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

    Shimada N., Aoki T., Matsuo J., Yamada I., Goto K., Sugui T.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 80 - 83   1998年7月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    Future integrated circuits require shallow pn junctions with a depth below 50 nm and, therefore, low energy ion beams are necessary. Cluster ions can realize both goals of low-energy and high-current ion beams quite easily, because the kinetic energy of a cluster is shared among constituent atoms. Another advantage of cluster ion implantation is that the substrate damage induced by ion bombardment can be controlled by changing the cluster size. As a consequence, the transient enhanced diffusion (TED) of the dopant during annealing can be controlled in cluster ion implantation. We have used the polyatomic cluster, decaborane (B10H14) to form very shallow p * junctions. During 900 °C annealing, the diffusion of boron atoms implanted at 3 keV was strongly suppressed compared with that implanted at 10 keV implantation. The difference in defect distribution between 10 and 3 keV implantation caused the different annealing behavior. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00108-4

    Scopus

  256. Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation 査読有り

    N Shimada, T Aoki, J Matsuo, Yamada, I, K Goto, T Sugui

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 80 - 83   1998年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE SA  

    Future integrated circuits require shallow pn junctions with a depth below 50 nm and, therefore, low energy ion beams are necessary. Cluster ions can realize both goals of low-energy and high-current ion beams quite easily, because the kinetic energy of a cluster is shared among constituent atoms. Another advantage of cluster ion implantation is that the substrate damage induced by ion bombardment can be controlled by changing the cluster size. As a consequence, the transient enhanced diffusion (TED) of the dopant during annealing can be controlled in cluster ion implantation. We have used the polyatomic cluster, decaborane (B10H14) to form very shallow p(+) junctions. During 900 degrees C annealing, the diffusion of boron atoms implanted at 3 keV was strongly suppressed compared with that implanted at 10 keV implantation. The difference in defect distribution between 10 and 3 keV implantation caused the different annealing behavior. (C) 1998 Elsevier Science S.A. All rights reserved.

    Web of Science

  257. Molecular dynamics simulation of a carbon cluster ion impacting on a carbon surface 査読有り

    Aoki T., Seki T., Matsuo J., Insepov Z., Yamada I.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 139 - 142   1998年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    High-density irradiation effects were studied by molecular dynamics simulations of fullerene (C60) impacting on a carbon surface. When a C60 ion with the incident energy of nearly 200 eV per atom impacts on the solid surface, an effect termed 'clearing-way (CW) effect' occurs. This effect is due to the high energy density and coherency of incident atoms. The penetration depth of C60 is deeper than that of the carbon monomer (C1) with 200 eV because of the CW effect, but shallower than that of the carbon monomer with 12 keV (200 eV per atom × 60). This result is attributed to a second effect termed 'multiple-collision (MC) effect'. This effect is caused by a large number of collisions between the incident and surface atoms that occur at the impact, and these collisions transfer the larger component of the momenta of the cluster to the lateral direction, unlike the monomer ion impact. Therefore, the penetration depth is proportional to the cube root of the incident energy, and the stopping power is magnified compared with the carbon monomer. When the incident energy of the cluster increases, both the cross-section of the impact and the number of collisions decrease, the MC effect is reduced and the behavior of incident atoms becomes similar to that of the monomer ions. On the contrary, when the incident energy of a cluster is less than the threshold energy of implantation, a cluster dissociates on the solid surface without implantation and the MC effect does not occur. It is shown that the range of incident energy where C60 shows a non-linear impact effect is from about 100 eV per atom to 2 keV per atom. © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00096-0

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  258. Molecular dynamics simulation of a carbon cluster ion impacting on a carbon surface

    Aoki T, Seki T, Matsuo J, Insepov Z, Yamada I

    MATERIALS CHEMISTRY AND PHYSICS   54 巻 ( 1-3 ) 頁: 139 - 142   1998年7月

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  259. Low-temperature formation of perovskite PbTiO<inf>3</inf> films by O<inf>2</inf> cluster ion-assisted deposition

    Akizuki M., Matsuo J., Qin W., Aoki T., Harada M., Ogasawara S., Yodoshi K., Yamada I.

    Materials Chemistry and Physics   54 巻 ( 1-3 ) 頁: 255 - 257   1998年7月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Chemistry and Physics  

    The formation of PbTiO3 films on Pt films using O2 cluster ions, Pb and Ti(i-OC3H7)4, was examined. Perovskite-PbTiO3 films could be formed at a substrate temperature of 400°C which was about 100°C lower than that which is possible with CVD and sol-gel methods. An acceleration energy of 1 keV was sufficient to form the perovskite structure. These films were obtained owing to a high oxidant flux to the surface and high-density energy deposition during growth. Another feature of the O2 cluster ion assisted deposition was that no pyrochlore structure was observed at lower substrate temperatures. This might be due to surface reactions in the high vacuum (3 × 10-5 Torr). © 1998 Elsevier Science S.A. All rights reserved.

    DOI: 10.1016/S0254-0584(98)00100-X

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  260. Cluster Ion Implantation and Device Processes

    Yamada I., Matsuo J., Toyoda N., Aoki T.

    Shinku/Journal of the Vacuum Society of Japan   41 巻 ( 11 ) 頁: 932 - 939   1998年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Shinku/Journal of the Vacuum Society of Japan  

    DOI: 10.3131/jvsj.41.932

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  261. Computer simulation of annealing after cluster ion implantation 査読有り 国際誌

    Insepov Z, Aoki T, Matsuo J, Yamada I

    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING   532 巻   頁: 147 - 152   1998年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  262. Gas cluster ion beam processing 査読有り 国際誌

    Yamada I, Matsuo J, Toyoda N, Aoki T, Jones E, Insepov Z

    SIMILARITIES AND DIFFERENCES BETWEEN ATOMIC NUCLEI AND CLUSTERS   ( 416 ) 頁: 310 - 329   1998年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  263. Molecular dynamics simulation of fullerene cluster ion impact 査読有り 国際誌

    Aoki T, Seki T, Tanomura M, Matsuo J, Insepov Z, Yamada I

    ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS   504 巻   頁: 81 - 86   1998年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  264. Size dependence of bombardment characteristics produced by cluster ion beams 査読有り 国際誌

    Seki T, Tanomura M, Aoki T, Matsuo J, Yamada I

    ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS   504 巻   頁: 93 - 98   1998年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  265. Ultra shallow junction formation by cluster ion implantation 査読有り 国際誌

    Matsuo J, Aoki T, Goto K, Sugii T, Yamada I

    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING   532 巻   頁: 17 - 22   1998年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  266. Ultra shallow junction formation by cluster ion implantation

    Matsuo J., Aoki T., Goto K.i., Sugii T., Yamada I.

    Materials Research Society Symposium - Proceedings   532 巻   頁: 17 - 22   1998年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Implantation of B cluster ions into Si using decaborane (B10H14) has been demonstrated. SIMS measurements show that the depth distribution of boron atoms implanted with a monomer ion is exactly matched by that of boron atoms implanted from decaborane ions, if the cluster ion has an order of magnitude larger acceleration energy. According to the Langmuir-Child equation, two orders of magnitude larger space-charge limited ion beam current is possible when decaborane ions are used. Implanted boron atoms from decaborane ions are electrically activated after annealing. Junction depth of the implanted layer with 3 keV decaborane ions is approximately 20 nm after annealing at 900 °C. Molecular dynamic calculations show that implantation efficiency of boron monomer ions and decaborane ions are the same. However, the number of displaced silicon atoms per implanted boron atom from a decaborane ion impact is 4 times larger than that by boron monomer impact so that a heavily damaged region is created near the impact zone by decaborane ion penetration.

    DOI: 10.1557/proc-532-17

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  267. Gas cluster ion beam processing 査読有り

    Yamada, I, J Matsuo, N Toyoda, T Aoki, E Jones, Z Insepov

    SIMILARITIES AND DIFFERENCES BETWEEN ATOMIC NUCLEI AND CLUSTERS   ( 416 ) 頁: 310 - 329   1998年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AMER INST PHYSICS  

    Unique characteristics of gas cluster ion beam processing are reviewed. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.

    Web of Science

  268. Computer simulation of annealing after cluster ion implantation

    Insepov Z., Aoki T., Matsuo J., Yamada I.

    Materials Research Society Symposium - Proceedings   532 巻   頁: 147 - 152   1998年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, approximately 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

    DOI: 10.1557/proc-532-147

    Scopus

  269. ガスクラスターイオンビームによる表面エッチング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡, INSEPOV Zinetulla

    表面科学   18 巻 ( 12 ) 頁: 743 - 751   1997年12月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:日本表面科学会  

  270. ガスクラスターイオンビームプロセッシング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡

    電気学会研究会資料. MC, 金属・セラミックス研究会   1997 巻 ( 1 ) 頁: 27 - 34   1997年11月

     詳細を見る

    掲載種別:研究論文(学術雑誌)  

  271. Molecular dynamics simulation of damage formation by cluster ion impact

    Aoki T, Matsuo J, Insepov Z, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   121 巻 ( 1-4 ) 頁: 49 - 52   1997年1月

     詳細を見る

    掲載種別:研究論文(学術雑誌)  

    Web of Science

  272. STM observation of HOPG surfaces irradiated with Ar cluster ions 査読有り

    Seki T., Kaneko T., Takeuchi D., Aoki T., Matsuo J., Insepov Z., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   121 巻 ( 1-4 ) 頁: 498 - 502   1997年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Cluster ion beams offer new surface modification processes because of their unique interaction between cluster atoms and solid surfaces. For example, surface smoothing and shallow implantation by cluster ion beam have been demonstrated. In order to reveal such cluster-surface interaction, a single trace formed by a cluster ion impact on a solid surface has been investigated using Scanning Tunneling Microscopy (STM). STM images of Highly Oriented Pyrolitic Graphite (HOPG) surfaces, were obtained after irradiation with 150 keV Ar cluster or 1.5 keV monomer ions. The 150 keV cluster ions, with a size of about 100 atoms, were used in comparison with 1.5 keV monomer ion. The velocity of an atom in each case was the same. In spite of these equal velocities, large craters with diameter of about 180 Å were observed in the STM image of cluster-irradiated HOPG surface, while only small hills were observed in monomer-irradiated surface.

    DOI: 10.1016/S0168-583X(96)00557-5

    Web of Science

    Scopus

  273. STM observation of HOPG surfaces irradiated with Ar cluster ions

    Seki T, Kaneko T, Takeuchi D, Aoki T, Matsuo J, Insepov Z, Yamada I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   121 巻 ( 1-4 ) 頁: 498 - 502   1997年1月

     詳細を見る

    掲載種別:研究論文(学術雑誌)  

    Web of Science

  274. Molecular dynamics simulation of damage formation by cluster ion impact

    Aoki T., Matsuo J., Insepov Z., Yamada I.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   121 巻 ( 1-4 ) 頁: 49 - 52   1997年1月

     詳細を見る

    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    The irradiation of a surface with a cluster ion beam is known to give superior surface modification effects compared with monomer ions. Surface smoothing processes and sputtering yield are both better off. The irradiation process by cluster ions has proved to be quite different from that by monomer ions. We have examined the process of cluster impacts on a solid surface by molecular dynamics simulation to investigate these differences. We simulated an Ar cluster, with size from 13 to 3000 atoms, impacting on a Si(100) substrate, with acceleration energies from 0.5 keV to 55 keV. The Ar cluster atoms penetrate into the Si substrate keeping the cluster state, and the penetration depth is deeper than that of a monomer ion of the same velocity. Si atoms around the Ar cluster are displaced, some of them recover, and the Ar atoms of the cluster are reflected back into the vacuum. Consequently, the displaced Si atoms concentrate in a shallow surface area, and crater-like damage remains. The radius and the depth of the crater are almost the same and are proportional to the cube root of the acceleration energy of the cluster ion. This means that the peculiar damage formation process, created by a cluster ion impact, is caused by an isotropic energy transportation through many interactions between cluster and surface atoms.

    DOI: 10.1016/S0168-583X(96)00698-2

    Scopus

  275. Molecular dynamics simulation of damage formation by cluster ion impact 査読有り

    T Aoki, J Matsuo, Z Insepov, Yamada, I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   121 巻 ( 1-4 ) 頁: 49 - 52   1997年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    The irradiation of a surface with a cluster ion beam is known to give superior surface modification effects compared with monomer ions. Surface smoothing processes and sputtering yield are both better off. The irradiation process by cluster ions has proved to be quite different from that by monomer ions. We have examined the process of cluster impacts on a solid surface by molecular dynamics simulation to investigate these differences. We simulated an Ar cluster, with size from 13 to 3000 atoms, impacting on a Si(100) substrate, with acceleration energies from 0.5 keV to 55 keV. The Ar cluster atoms penetrate into the Si substrate keeping the cluster state, and the penetration depth is deeper than that of a monomer ion of the same velocity. Si atoms around the Ar cluster are displaced, some of them recover, and the Ar atoms of the cluster are reflected back into the vacuum. Consequently, the displaced Si atoms concentrate in a shallow surface area, and crater-like damage remains. The radius and the depth of the crater are almost the same and are proportional to the cube root of the acceleration energy of the cluster ion. This means that the peculiar damage formation process, created by a cluster ion impact, is caused by an isotropic energy transportation through many interactions between cluster and surface atoms.

    Web of Science

  276. ガスクラスターイオンビームによる表面エッチング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡, INSEPOV Zinetulla

    表面科学   18 巻 ( 12 ) 頁: 743 - 751   1997年

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 日本表面科学会  

    Sputtering with gas cluster ions, which are aggregates of a few thousands of atoms, has been investigated experimentally and theoretically. Cluster ion beam etching is equivalent to low-energy high-current ion etchings with very low damage. Interesting new phenomena resulting from multiple collisions of incoming atoms in a very localized area were found. A surface smoothing effect is one of the typical phenomena, which is caused by lateral sputtering in which many atoms are ejected from the substrate in a lateral direction. Molecular dynamics simulation clearly shows that these sputtered atoms are ejected from the edge of craters formed by cluster ion impact.

    DOI: 10.1380/jsssj.18.743

  277. Cluster ion implantation for shallow junction formation 査読有り 国際誌

    Matsuo J, Takeuchi D, Aoki T, Yamada I

    ION IMPLANTATION TECHNOLOGY - 96     頁: 768 - 771   1997年

     詳細を見る

    掲載種別:研究論文(学術雑誌)  

    Web of Science

  278. Non-linear effects in high energy cluster ion implantation 査読有り 国際誌

    Takeuchi D, Aoki T, Matsuo J, Yamada I

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY - PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE, PTS 1 AND 2   ( 392 ) 頁: 491 - 494   1997年

     詳細を見る

    掲載種別:研究論文(学術雑誌)  

    Web of Science

  279. Range and damage distribution in cluster ion implantation 査読有り 国際誌

    Yamada I, Matsuo J, Jones EC, Takeuchi D, Aoki T, Goto K, Sugii T

    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING   438 巻   頁: 363 - 374   1997年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  280. Non-linear effects in high energy cluster ion implantation 査読有り

    D Takeuchi, T Aoki, J Matsuo, Yamada, I

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY - PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE, PTS 1 AND 2   ( 392 ) 頁: 491 - 494   1997年

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AIP PRESS  

    Cluster ion implantation realizes ultra-shallow (&lt;50nm) junction formation. Cluster ions can provide a low-energy and high-current beam, because each constituent atom in the cluster, with sizes of a few thousands, has an energy of only a few eV. Non-linear effects of high energy cluster ion implantation caused by multiple-collisions and high-density energy deposition within a local surface region, have been investigated. Decaborane (B(10)G(14)), C-60 and large A cluster ions with sizes of from 100 to 3000 were implanted into Si and sapphire substrates at energies up to 300keV. The number of disordered substrate atoms per atom in a cluster ion was much larger than the damage done by a monomer ion with the same velocity. Single traces of cluster ions on solid surfaces were observed by STM and AFM to investigate the mechanism of the non-linear effects. Those of large At cluster ions looked like crater shapes where the crater diameter was proportional to one-third of the cluster ion energy.

    Web of Science

  281. 分子動力学法によるホウ素クラスターイオン注入のシミュレーション

    青木 学聡, 島田 規広, 竹内 大輔, 松尾 二郎, Insepov Zinetulla, 山田 公

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   96 巻 ( 396 ) 頁: 49 - 54   1996年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人電子情報通信学会  

    数十から数千の原子集団であるクラスターをイオン化し,照射するクラスターイオンビーム法は,等価的に低エネルギーのイオン照射を可能とする.サイズ13のBクラスターに1原子あたり230eVのエネルギーを与え,Si(100)表面に衝突させるシミュレーションを行った結果,230eVの単原子Bと同様の注入分布が得られた.またクラスターサイズを13,43,169と大きくするに従い,等しい総加速エネルギーでありながら,Bの注入深さが浅くなり,チャネリングを生じるB原子の割合が減少することが分かった. これらの事からクラスターイオンビーム法が浅い注入層形成に対する有効な手法であることが示された.

  282. Cluster ion implantation for shallow junction formation

    Matsuo J., Takeuchi D., Aoki T., Yamada I.

    Proceedings of the International Conference on Ion Implantation Technology     頁: 768 - 771   1996年12月

     詳細を見る

    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    The implantation of Ar and B into Si by cluster ion has been examined. Shallow implantation was clearly demonstrated with a high energy cluster ion. The damage layer thickness is less than 200 angstroms, when 150 keV Ar cluster ions are implanted into Si. This thickness is one order of magnitude smaller than that by Ar monomer ion bombardment with the same total energy. The thickness of the damaged layer formed by cluster ion bombardment increased with the cluster size, when the total energy of cluster ion remain the same. This is one of the non-linear effect of cluster implantation. Poly-atomic cluster-ion implantation with decaborane has also been demonstrated. Shallow implantation (<0.05 μm) can be achieved by decaborane(B10H14) ions. The sheet resistance of the sample reached a few hundred Ω/□ after annealing at 1000 °C for 10 s.

    Scopus

  283. Range and damage distribution in cluster ion implantation

    Yamada I., Matsuo J., Jones E.C., Takeuchi D., Aoki T., Goto K., Sugii T.

    Materials Research Society Symposium - Proceedings   438 巻   頁: 363 - 374   1996年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Cluster ion implantation is an attractive alternative to conventional ion implantation, particularly for shallow junction formation. It is easy to obtain high-current ion beams with low equivalent energy using cluster ion beams. The implanted boron distribution in 5keV B10H14 implanted Si is markedly shallower than that in 5keV BF2 ion implanted Si. The implanted depth is less than 0.04 μm, indicating that cluster ion implantation is capable of forming shallow junctions. The sheet resistance of 3keV B10H14 implanted samples falls below 500 Ω/sq after annealing at 1000°C for 10s. Shallow implantation can be realized by a high energy cluster beam without space-charge problems in the incident beam. Defect formation, resulting from local energy deposition and multiple collisions, is unique for cluster ions. The thickness of the damaged layer formed by cluster ion bombardment increases with the size of the cluster, if implant energy and ion dose remain constant. This is one of the nonlinear 'cluster effects', which may allow some control over the implant damage distributions that accompany implanted ions, and which have been shown to have a great effect on dopant redistribution during annealing.

    DOI: 10.1557/proc-438-363

    Scopus

▼全件表示

書籍等出版物 8

  1. 大学における研究データポリシー策定のためのガイドライン

    船守美穂, 青木学聡, 松原茂樹, 外山勝彦, 松井啓之, 芦北卓也, 菊川昭治, 元木正和, 岩井雅史, 結城憲司, 加納靖之( 担当: 共編者(共編著者))

    一般社団法人大学ICT推進協議会  2021年7月 

     詳細を見る

    総ページ数:70   記述言語:日本語

    その他リンク: https://ndlonline.ndl.go.jp/#!/detail/R300000001-I031786036-00

  2. 大学における 研究データ管理体制 構築への道のり(「大学における研究データポリシー策定のためのガイドライン」付録)

    船守美穂, 青木学聡, 松原茂樹, 外山勝彦, 松井啓之, 芦北卓也, 菊川昭治, 元木正和, 岩井雅史, 結城憲司, 加納靖之( 担当: 共編者(共編著者))

    一般社団法人大学ICT推進協議会  2021年7月 

     詳細を見る

    総ページ数:12   記述言語:日本語

    その他リンク: https://ndlonline.ndl.go.jp/#!/detail/R300000001-I031785995-00

  3. ION IMPLANTATION TECHNOLOGY 2010: 18th International Conference on Ion Implantation Technology IIT 2010 (AIP conference proceedings CP1321)

    Eds. Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki( 担当: 共編者(共編著者))

    American Institute of Physics  2011年1月 

     詳細を見る

    記述言語:英語

  4. クラスターイオンビーム基礎と応用-次世代ナノ加工プロセス技術-

    山田公( 担当: 分担執筆 ,  範囲: 執筆(3.1, 3.4.2,3.6, 3.7)及び第3章責任編集)

    日刊工業新聞社  2006年10月  ( ISBN:978-4526057656

     詳細を見る

    総ページ数:223   記述言語:日本語

  5. クラスターイオンビーム基礎と応用-次世代ナノ加工プロセス技術-

    山田公監修( 担当: 分担執筆 ,  範囲: 執筆(3.1, 3.4.2,3.6, 3.7)及び第3章責任編集)

    日刊工業新聞社  2006年10月 

     詳細を見る

    記述言語:日本語 著書種別:学術書

  6. Exprimental study of cluster size effect with size-selected cluster ion beam

    Toyoda N., Houzumi S., Aoki T., Yamada I.( 担当: 単著)

    Novel Materials Processing by Advanced Electromagnetic Energy Sources  2005年12月  ( ISBN:9780080445045

     詳細を見る

    記述言語:日本語

    This chapter reveals the experimental study of cluster size effect with size-selected cluster ion beam. A size-selected gas cluster ion beam (GCIB) system is developed to study the size effects of energetic large cluster ion bombardments on a solid surface for the first time. This system equipped a permanent magnet with a magnetic flux density of 1.2 T. There is a sliding detector and sample holder on a guiding rail perpendicular to the incoming cluster beam axis. By locating a sample at a certain position, particular size of cluster ion can be irradiated continuously with affordable ion current density. When the total acceleration energy of Ar-GCIB is 5keV, both amorphous and oxide thickness on silicon (Si) substrate increased with decreasing cluster size. This result showed good agreement with that obtained from molecular dynamics simulations. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50044-1

    Scopus

  7. Surface structure dependence of impact processes of gas cluster ions

    Aoki T., Matsuo J., Yamada I.( 担当: 単著)

    Novel Materials Processing by Advanced Electromagnetic Energy Sources  2005年12月  ( ISBN:9780080445045

     詳細を見る

    記述言語:日本語

    This chapter discusses the surface structure dependence of impact processes of gas cluster ions. The surface modification processes utilizing the impact of large cluster ions is also proposed. One of the unique properties of cluster ion impact is that the low-energy and high-density atomic irradiation can be realized simultaneously. This characteristic impact process causes local heating, large motion, and chemical excitation of the surface atoms. Many experiments proved that cluster irradiation shows remarkable advantages in thin film formation, surface smoothing, and high-rate and high-aspect etching. Surface smoothing is one of the important applications of cluster ion irradiation and is used for industrial applications. Molecular dynamics simulations are performed in order to understand the relationship between surface deformation process and surface structure. It is found that the collisional process of cluster is different depending on local surface morphology where the cluster impacts. When a cluster impacts close to the peak point, the hill structure is made flat and the surface atoms comprising the hill are moved away and deposited on the valley. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50047-7

    Scopus

  8. Gas cluster ion beam source for secondary ion emission measurements

    Ono L., Aoki T., Seki T., Matsuo J., Itoh A.( 担当: 単著)

    Novel Materials Processing by Advanced Electromagnetic Energy Sources  2005年12月  ( ISBN:9780080445045

     詳細を見る

    記述言語:日本語

    This chapter discusses the gas cluster ion beam source for secondary ion emission measurements. When solids are bombarded with cluster ions, collision cascades induced by individual constituent atoms of the cluster overlap each other. Energy density deposited with cluster ions is much higher than that deposited with monomer ions at the same velocity. Thus, subsequent phenomena, such as material modifications or secondary particle emissions, are enhanced under the impact of 'n'- atom clusters compared to the sum over 'n' atomic ions. These enhancements are generally called "nonlinear effects". The feature of secondary ion yield as a function of primary beam energy could be compared for monomer and cluster impacts. For monomer impacts the emission of ionized species has similarities with the emission of neutral species, showing that these processes proceed by a common mechanism. For large cluster impacts, the sputtering yield increases linearly with the primary ion energy. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50046-5

    Scopus

▼全件表示

MISC 102

  1. AXIES-JPCOAR研究データワークショップ<報告>

    青木学聡  

    カレントアウェアネス-E ( E2392 )   2021年6月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:会議報告等  

  2. 「大学における研究データに関するアンケート(雛形)」の公開

    青木学聡  

    カレントアウェアネス-E ( E2308 )   2020年10月

     詳細を見る

    記述言語:日本語   掲載種別:書評論文,書評,文献紹介等  

  3. 京都大学教育研究活動データベースの現状と課題

    梶原 弘貴, 澤田 浩文, 赤坂 浩一, 渥美 紀寿, 青木 学聡  

    2019年度大学ICT推進協議会年次大会   2019年12月

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    記述言語:日本語   掲載種別:研究発表ペーパー・要旨(全国大会,その他学術会議)  

  4. 招待講演 新しいプローブイオンを用いたSIMSによる有機材料分析 (光・量子デバイス研究会 微細加工技術とバイオ・メディカル応用) 招待有り

    瀬木 利夫, 青木 学聡, 松尾 二郎  

    電気学会研究会資料. OQD = The papers of technical meeting on optical and quantum devices, IEE Japan2018 巻 ( 22 ) 頁: 29 - 33   2018年3月

     詳細を見る

    記述言語:日本語   出版者・発行元:電気学会  

  5. Development of ambient SIMS using MeV-energy ion probe

    Kusakari M., Fujii M., Seki T., Aoki T., Matsuo J.  

    Annual report of Quantum Science and Engineering Center18 巻   頁: 21 - 25   2016年4月

     詳細を見る

    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  6. Development of Low-Vacuum SIMS Instruments with Large Cluster Ion Beam

    Suzuki K., Kusakari M., Seki T., Aoki T., Matsuo J.  

    Annual report of Quantum Science and Engineering Center18 巻   頁: 26 - 29   2016年4月

     詳細を見る

    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  7. クラスターSIMS法を用いた生体試料分析の現状と課題

    藤井 麻樹子, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    表面科学学術講演会要旨集35 巻 ( 0 )   2015年

     詳細を見る

    出版者・発行元:公益社団法人 日本表面科学会  

    近年、クラスターSIMS法を用いた有機材料分析が盛んに行われている。しかしながら、一般に複雑な組成や構造を持つ生体試料に対しては、その高精細な分析は未だ困難である。我々の研究グループでは、独自に作製した種々の有機モデル試料を用いて、クラスターSIMS法を用いた生体試料分析における質量分解能、空間分解能、検出限界や定量性に関する評価を行った。本発表では現在の課題と将来展望に関する議論を行う。

  8. クラスターSIMS法による生体分子の高空間分解能イメージング

    松尾 二郎, 鈴木 敢士, 草刈 将一, 藤井 麻樹子, 青木 学聡, 瀬木 利夫  

    表面科学学術講演会要旨集35 巻 ( 0 )   2015年

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    出版者・発行元:公益社団法人 日本表面科学会  

    脂肪酸や脂質分子は、細胞膜の主要構成分子だけでなく様々なシグナル伝達物質としての役目も負っている興味深い分子である。クラスターSIMS法では多数の脂質分子イオンを同時に高感度に検出でき、その分布を可視化する分子イメージングできるという利点がある。脂質分子の高感度検出とその分子イメージングへの応用について、実サンプルの評価結果交えて議論する。

  9. BiクラスターTOF-SIMSによる有機材料のイメージング分析に関する研究

    宍戸 理恵, 藤井 麻樹子, 瀬木 利夫, 青木 学聡, 松尾 二郎, 鈴木 茂  

    表面科学学術講演会要旨集35 巻 ( 0 )   2015年

     詳細を見る

    出版者・発行元:公益社団法人 日本表面科学会  

    一次イオンにクラスターを用いたStaticタイプのSIMSが市販化されるようになると、分析の対象が無機材料から生体材料、ポリマー材料などのソフトマテリアルへと広がった。更に、LMIGを用いた電界放射でのイオン化により、高輝度なイオンビーム照射が実現し、高空間分解能でのイメージング分析が可能になってきた。本発表では、一次イオンにBiクラスターを採用したTOF-SIMSを用いて、一次イオン種がイメージ分解能に与える影響について議論する。

  10. 3D molecular imaging of organic multilayer film by Ar gas cluster ion beam SIMS

    Wakamoto K., Seki T., Aoki T., Matsuo J.  

    Annual report of Quantum Science and Engineering Center16 巻   頁: 27 - 29   2014年4月

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    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  11. Lipid Compounds Analysis with MeV-SIMS Apparatus

    Fujii M., Kusakari M., Seki T., Aoki T., Matsuo J.  

    Annual report of Quantum Science and Engineering Center16 巻   頁: 22 - 24   2014年4月

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    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  12. X-ray Diffraction Measurements for a Diarylethene Single Crystal for Time-resolved Femtosecond X-ray Diffraction

    Hontani Yusaku, Hada Masaki, Seki Toshio, Aoki Takaaki, Matsuo Jiro  

    Annual report of Quantum Science and Engineering Center15 巻   頁: 26 - 29   2013年4月

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    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  13. Depth analysis of DSPC by SIMS, using gas cluster ion beam

    Nakagawa S., Seki T., Aoki T., Matsuo J.  

    Annual report of Quantum Science and Engineering Center15 巻   頁: 21 - 23   2013年4月

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    記述言語:英語   出版者・発行元:Quantum Science and Engineering Center, Department of Nuclear Engineering, Graduate School of Engineering, Kyoto University  

    CiNii Books

  14. クラスターSIMS法による脂質分子の高感度検出とイメージングへの応用

    松尾 二郎, 中川 俊一郎, 鳥居 聡太, 藤井 麻樹子, 瀬木 利夫, 青木 学聡  

    表面科学学術講演会要旨集33 巻 ( 0 ) 頁: 18 - 18   2013年

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    出版者・発行元:公益社団法人 日本表面科学会  

    <br>脂肪酸や脂質分子は、細胞膜の主要構成分子だけでなく様々なシグナル伝達物質としての役目も負っている興味深い分子である。クラスターSIMS法では多数の脂質分子イオンを同時に高感度に検出でき、その分布を可視化する分子イメージングできるという利点がある。脂質分子の高感度検出とその分子イメージングへの応用について、実サンプルの評価結果交えて議論する。

    DOI: 10.14886/sssj2008.33.0_18

  15. クラスターSIMS法による脂質薄膜の構造評価

    松尾 二郎, 中川 駿一郎, 志戸本 祥, 鳥居 聡太, 瀬木 利夫, 青木 学聡  

    表面科学学術講演会要旨集32 巻 ( 0 )   2012年

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    出版者・発行元:公益社団法人 日本表面科学会  

    細胞膜などで普遍的にみられる脂質薄膜をクラスターSIMS法で評価した。ソフトなイオン化法であるクラスターSIMS法は、脂質分子を壊すことなくイオン化でき、構造評価に適した手法である。また、ラットの脳切片などへの応用も示す。

  16. Sputtering yield measurements with size-selected gas cluster ion beams 査読有り

    Kazuya Ichiki, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    MRS Proceedings1181 巻   頁: 135 - 140   2011年1月

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

    DOI: 10.1557/proc-1181-dd13-25

  17. 2次イオン質量分析法(SIMS法)によるバイオイメー ジング

    松尾 二郎, 市木 和弥, 瀬木 利夫, 青木 学聡  

    表面科学学術講演会要旨集31 巻 ( 0 ) 頁: 171 - 171   2011年

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    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    二次イオン質量分析法の持つ高い空間分解能を活かし、培養細胞や生体組織切片への応用を進めており、細胞一個を観察することが可能となっている。最新のSIMS法の生命科学への応用を、我々の研究成果を中心に実例を交えながら紹介し、高分解質量イメージング法としての今後の課題や展望について議論する。

  18. クラスターイオンビーム技術の最近の進展

    松尾 二郎, 瀬木 利夫, 青木 学聡  

    表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan31 巻 ( 11 ) 頁: 564 - 571   2010年11月

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    記述言語:日本語   出版者・発行元:日本表面科学会  

    CiNii Books

  19. Characteristics of organic depth profiling using large cluster ion beams

    Satoshi Ninomiya, Kazuya Ichiki, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of 10th Workshop on Cluster Ion Beam Technology   頁: 43 - 47   2010年6月

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  20. クラスタイオンビームによる平坦化加工技術

    松尾 二郎, 瀬木 利夫, 二宮 啓, 青木 学聡  

    砥粒加工学会誌 = Journal of the Japan Society of Grinding Engineers54 巻 ( 5 ) 頁: 272 - 275   2010年5月

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    記述言語:日本語   出版者・発行元:砥粒加工学会  

    CiNii Books

  21. クラスターイオンビーム技術の最近の進展

    松尾 二郎, 瀬木 利夫, 青木 学聡  

    表面科学31 巻 ( 11 ) 頁: 564 - 571   2010年

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    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    A brief overview for recent progress of cluster ion beams is presented in conjunction with atomistic collision dynamics, cluster size effects and nano-process developments. Unique characteristics of cluster ion beam are utilized not only for nano-processing but also metrology for organic materials. Molecular dynamics study on cluster-solid interactions and size dependence of sputtering with Ar or Cl<Sub>2</Sub> cluster ions reveal that both incident energy and chemical potential energy are effectively transfer to the surface to enhance the sputtering yield. In addition to these, less damage was remained on organic surface bombarded with cluster ions. Organic depth profiling of XPS or SIMS are realized with cluster ion beams.

    DOI: 10.1380/jsssj.31.564

  22. 18<sup>th</sup> International Conference on Ion Implantation Technology 査読有り

    J. Matsuo, M. Kase, T. Aoki, T. Seki  

    AIP Conference Proceedings1321 巻   頁: xi   2010年

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    記述言語:英語  

  23. 高速重イオンによるラット脳組織内の脂質イメージング

    若松 慶信, 山田 英丙, 二宮 啓, 瀬木 利夫, 青木 学聡, 石原 昭彦, 松尾 二郎  

    表面科学学術講演会要旨集30 巻 ( 0 ) 頁: 197 - 197   2010年

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    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    高速重イオンをプローブとした二次イオン質量分析法(SIMS)は、1μm程度の面分解能で分析可能なことに加え、従来のSIMSに比較し高分子に対して高い感度での分析、および1000 Pa程度の低真空下に保持されたサンプルの分析が可能である。本発表では高速イオンによるSIMSでラットの脳組織内に含まれるリン脂質のイメージングを実施した結果を報告する。

  24. 二次イオン質量分析法を用いた生体組織の観察

    松尾 二郎, 市木 和弥, 山本 恭千, 若松 慶喜, 青木 学聡, 瀬木 利夫  

    表面科学学術講演会要旨集30 巻 ( 0 ) 頁: 447 - 447   2010年

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    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    二次イオン質量分析法を使った細胞や組織切片のイメージング技術についてのべるとともに、実際のアプリケーションに必要な問題点や課題を明らかにする。有機分子分析や質量イメージング法の実現に必要な一次イオンビームの特性、次世代のSIMSに求められているハードウェアーなどについても検討し、新しいSIMS分析法の開発状況を報告する。

  25. ArクラスターSIMSを用いたToF型質量イメージング装置の開発

    山本 恭千, 市木 和弥, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    表面科学学術講演会要旨集30 巻 ( 0 ) 頁: 308 - 308   2010年

     詳細を見る

    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    二次イオン質量分析法(SIMS)を用いた質量イメージングは工業や医学への応用が期待されている。しかし、従来の数keVのモノマーイオンを用いたSIMS分析では有機試料の分子構造を破壊してしまうという問題がある。我々は低損傷での照射が可能なクラスターイオンを用いたSIMSについて研究しており、今回の研究ではArクラスターSIMSを用いた高面分解能の質量イメージングを取得するための装置開発を行った。

  26. Sputtering yield measurements with size-selected gas cluster ion beams

    Kazuya Ichiki, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    ION BEAMS AND NANO-ENGINEERING1181 巻   頁: 135 - +   2010年

     詳細を見る

    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOC  

    Ar cluster ions in the size range 1000-16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

    Web of Science

    Scopus

  27. Etching Characteristics with Ar-Cl₂ Gas Mixed Cluster Ion Beam

    Seki Toshio, Aoki Takaaki, Matsuo Jiro  

    兵庫県立大学工学研究科イオン工学研究室論文集   頁: 273 - 277   2010年

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    記述言語:英語   出版者・発行元:兵庫県立大学工学研究科イオン光学研究室  

  28. A Processing Technique for Cell Surfaces Using Gas Cluster Ions for Imaging Mass Spectrometry

    Yamada Hideaki, Ichiki Kazuya, Nakata Yoshihiko, NINOMIYA Satoshi, SEKI Toshio, AOKI Takaaki, MATSUO Jiro  

    質量分析 = Mass spectroscopy57 巻 ( 3 ) 頁: 117 - 121   2009年6月

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    記述言語:英語   出版者・発行元:一般社団法人 日本質量分析学会  

    We developed a processing technique for biological samples, that is, animal cells, for imaging mass spectrometry using gas cluster ion beams. Secondary ion mass spectrometry has been investigated for cellular imaging with high spatial resolution. Nanoscale processing techniques are needed for cellular level imaging, for example, for removing contamination from cell surfaces and exposing the insides of cells. In this study, we compared the mass spectrum of the unetched cell sample to that of the cell irradiated with an Ar cluster ion beam. The contamination was removed from the sample surface and the signals of intracellular components were detected. The results indicate that the cells were etched with low damage using the gas cluster ion beam. Finally, we compared the ion image of an unetched cell to that of an etched cell and demonstrated that the technique of cluster ion irradiation could be applied to the processing of samples for cellular level imaging mass spectrometry.

  29. 高速重イオンを用いた低真空SIMSの開発

    若松 慶信, 山田 英丙, 中田 由彦, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    表面科学学術講演会要旨集29 巻 ( 0 ) 頁: 35 - 35   2009年

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    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    近年、生体試料における質量イメージング技術の発展が期待されている。SIMSは高真空下での分析手法であるが、高速重イオンをプローブとすることにより低真空下でのSIMSに成功した。本発表では、数千Pa程度の低真空下で質量イメージングを行うための分析系の開発とその結果について報告する。

  30. SIMS depth profiling of organic films with Ar cluster ion beams

    Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Hideaki Yamada, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of 9th Workshop on Cluster Ion Beam Technology   頁: 61 - 68   2009年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(全国大会,その他学術会議)  

  31. Study of damage accumulation and annealing process at low energy boron implantation using molecular dynamics simulations

    Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009   頁: 131 - 132   2009年

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    記述言語:英語  

    Damage accumulation and annihilation processes with low-energy boron implantation were studied by molecular dynamics (MD) simulation. The MD simulation of B atom accelerated with 500eV iteratively implanted into Si(100) target showed that the number of interstitial Si atom saturates at about 1×1015/cm2 of B atomic dose. The results at several implant doses are annealed for about 4ns. When the B implanted dose is as low as 1× or 2×1014/cm2, the annealing simulations showed the re-crystallization of surface damage at 1800K and 2200K. However, very slow re-crystallization ratio was observed at the implant dose of more than 1×1015/cm2. ©2009 IEEE.

    DOI: 10.1109/IWJT.2009.5166237

    Scopus

  32. Stress measurement of carbon cluster implanted layers with in-plane diffraction technique

    Jiro Matsuo, Kazuya Ichiki, Masaki Hada, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Tsutomu Nagayama, Masayasu Tanjyo  

    Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009   頁: 84 - 85   2009年

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    記述言語:英語  

    Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing. ©2009 IEEE.

    DOI: 10.1109/IWJT.2009.5166225

    Scopus

  33. 高速重イオンを利用したイメージング質量分析

    中田 由彦, 山田 英丙, 本田 善郎, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    質量分析 = Mass spectroscopy56 巻 ( 4 ) 頁: 201 - 208   2008年8月

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    記述言語:日本語   出版者・発行元:一般社団法人 日本質量分析学会  

    In this paper, we describe mass spectrometric techniques using swift heavy ions, for biological application. Desorption of large biomolecular ions due to irradiation by swift heavy ions was first observed in 1974, and the time-of-flight mass spectrometry using fission fragments from a <sup>252</sup>Cf source is called plasma desorption mass spectrometry (PDMS). PDMS has been successfully applied in the detection of large biomolecules up to 20 kDa. However, the number of PDMS studies decreased after the emergence of fast atom bombardment (FAB). In recent years, a new mass spectrometric technique, which is called imaging mass spectrometry, has attracted attention, and numerous studies have been conducted on matrix assisted laser desorption/ionization (MALDI) and secondary ion mass spectrometry (SIMS). We have developed a new system for imaging mass spectrometry using MeV-ion beams, which is termed MeV-SIMS. High-resolution MeV-SIMS imaging requires high secondary ion yields, beam focusing, and careful sample preparation. Here, we present our results on MeV-SIMS imaging and future prospects.

    DOI: 10.5702/massspec.56.201

    CiNii Books

  34. Carbon nanotubes from a divided catalyst: the carbon transmission method

    Takeshi Hikata, Kazuhiko Hayashi, Tomoyuki Mizukoshi, Yoshiaki Sakurai, Itsuo Ishigami, Takaaki Aoki, Toshio Seki, Jiro Matsuo  

    APPLIED PHYSICS EXPRESS1 巻 ( 3 ) 頁: 0340021 - 0340023   2008年3月

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    We have fabricated carbon nanotubes (CNTs) using a catalyzed growth technique that we call the carbon transmission method (CTM). We could control independently functions for carbon source gas supply and CNT growth by using a foil barrier (Ag) penetrated by pure Fe fibers. CNTs grew on one end of the Fe fibers, formed from diffused carbon that originates in carbon source gas at the other end of the fibers. Long CNTs with length over 100 mu m were obtained on the end of the Fe fibers in the carbon transmitted side. (C) 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.034002

    Web of Science

    Scopus

  35. Carbon nanotubes from a divided catalyst: The carbon transmission method

    Takeshi Hikata, Kazuhiko Hayashi, Tomoyuki Mizukoshi, Yoshiaki Sakurai, Itsuo Ishigami, Takaaki Aoki, Toshio Seki, Jiro Matsuo  

    Applied Physics Express1 巻 ( 3 ) 頁: 0340021 - 0340023   2008年3月

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    記述言語:英語   出版者・発行元:Japan Society of Applied Physics  

    We have fabricated carbon nanotubes (CNTs) using a catalyzed growth technique that we call the carbon transmission method (CTM). We could control independently functions for carbon source gas supply and CNT growth by using a foil barrier (Ag) penetrated by pure Fe fibers. CNTs grew on one end of the Fe fibers, formed from diffused carbon that originates in carbon source gas at the other end of the fibers. Long CNTs with length over 100 μm were obtained on the end of the Fe fibers In the carbon transmitted side. © 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.034002

    Scopus

  36. クラスターイオンの新しい展開:~ナノプロセスから先端分析応用~

    松尾 二郎, 二宮 啓, 青木 学聡, 瀬木 利夫  

    Journal of Surface Analysis14 巻 ( 3 ) 頁: 196 - 203   2008年

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    記述言語:日本語   出版者・発行元:一般社団法人 表面分析研究会  

    &lt;p&gt; 原子・分子が同時に同じ場所に多数衝突するクラスターイオンでは,非線形照射効果と呼ばれる新しい現象が起こる.これを利用し様々な分野で画期的な成果が報告されており,従来のイオンビーム技術の限界を打破する新しい原理に基づく新技術として期待されている.ここでは,クラスターイオン特有の非線形現象について述べるとともに,そのナノプロセスへの応用やクラスターイオンを1次イオンとして用いるクラスターSIMSなどの分析技術についても概観する.&lt;/p&gt;

  37. 24aRB-2 高分解能イメージング質量分析へ向けたイオン入射条件の探索(原子分子・放射線融合(イオン-表面相互作用),領域1,原子・分子,量子エレクトロニクス,放射線物理)

    中田 由彦, 本田 善郎, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    日本物理学会講演概要集63 巻 ( 0 ) 頁: 165 - 165   2008年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.63.1.2.0_165_2

  38. 23aRB-2 巨大Arクラスター衝突によりSiから生成される二次イオンにおける入射速度効果(放射線物理(散乱素過程),領域1,原子・分子,量子エレクトロニクス,放射線物理)

    二宮 啓, 市木 和弥, 中田 由彦, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    日本物理学会講演概要集63 巻 ( 0 ) 頁: 144 - 144   2008年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.63.1.2.0_144_3

  39. 塩素クラスターによる高速加工

    瀬木 利夫, Aoki Takaaki, Matsuo Jiro  

    兵庫県立大学工学研究科イオン工学研究室論文集2008 巻   頁: 259 - 264   2008年

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    記述言語:英語   出版者・発行元:兵庫県立大学工学研究科イオン光学研究室  

  40. クラスターイオン衝突の密度効果

    青木 学聡, Seki Toshio, Matsuo Jiro  

    兵庫県立大学工学研究科イオン工学研究室論文集2008 巻   頁: 224 - 227   2008年

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    記述言語:英語   出版者・発行元:兵庫県立大学工学研究科イオン光学研究室  

  41. Computer modeling of cluster ion impacts

    Aoki T., Seki T., Matsuo J.  

    IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology   頁: 49 - 54   2008年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology  

    By the recent development of high-performance computing, molecular dynamics method has been a powerful technique for analyzing collisions between cluster and solid target system. In this paper, molecular dynamics simulations of various kinds of clusters impacting on the solid target were demonstrated. The characteristic collisional process of cluster and solid target in penetration depth, dynamic surface morphology deformation and damage formation were examined. ©2008 IEEE.

    DOI: 10.1109/IWJT.2008.4540016

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  42. Investigation of damage with cluster ion beam irradiation using HR-RBS 査読有り

    Seki T., Aoki T., Matsuo J.  

    AIP Conference Proceedings1066 巻   頁: 423 - +   2008年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:AIP Conference Proceedings  

    Cluster ion beam can process targets with shallow damage because of the very low irradiation energy per atom. However, it is needed to investigate the damage with cluster ion beam irradiation, because recent applications demand process targets with ultra low damage. The shallow damage can be investigated from depth profiles of specific species before and after ion irradiation. They can be measured with secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectroscopy (RBS). High resolution Rutherford backscattering spectroscopy (HR-RBS) is a non destructive measurement method and depth profiles can be measured with nano-resolution. The cluster ion beam mixing of thin Ni layer in carbon targets can be investigated with HR-RBS. The mixing depth with cluster ion irradiation at 10 keV was about 10 nm. The mixing depth with cluster ion irradiation at 1 keV and 5 keV were less than 1 nm and 5 nm, respectively. The number of displaced Ni atoms with cluster ion irradiation was very larger than that with monomer ion irradiation of same energy. This result shows that violent mixing occurs with single cluster impact.

    DOI: 10.1063/1.3033653

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  43. 19aXJ-4 サイズ選別されたクラスターイオン照射における二次イオン収率測定(放射線物理,領域1,原子・分子,量子エレクトロニクス,放射線物理)

    二宮 啓, 市木 和弥, 中田 由彦, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    日本物理学会講演概要集62 巻 ( 0 ) 頁: 138 - 138   2007年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.62.1.2.0_138_4

  44. Cluster ion implantation - Prospects and challenges

    Matsuo J., Aoki T., Seki T.  

    Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007   頁: 53 - 54   2007年

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    記述言語:英語   出版者・発行元:Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007  

    More than ten years have passed since cluster ion implantation was proposed by Kyoto University. Cluster ion implanters equipped with a specially designed ion source are announced for device manufacturing. This technique is now a candidate for ultra shallow junction formation in the ITRS Road Map [1]. It is essential to understand the atomistic mechanism of cluster implantation, because the behavior of damaged atoms during annealing is a very important topic for high-quality shallow junction formation. The damage induced with cluster ions is presented. ©2007 IEEE.

    DOI: 10.1109/IWJT.2007.4279945

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  45. MD study of damage structures with poly-atomic boron cluster implantation

    Aoki T., Seki T., Matsuo J.  

    Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007   頁: 23 - 24   2007年

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    記述言語:英語   出版者・発行元:Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007  

    The MD simulations of B monomer and small cluster implantation were performed. The non-linear effect for implant range was observed when the incident energy is as low as few hundreds eV/atom, where the B10 or B18 cluster implantation gives deeper implantation energy and so higher implant efficiency of dopants than that of B monomer or dimer. For damage formation, cluster implantation caused large number of collisions at narrow surface region, which results in high-density amorphization of impact area. This amorphization effect was observed at both low and high energy cluster ion implantation, and is expected to reduce enhanced diffusion and show good annihilation process. ©2007 IEEE.

    DOI: 10.1109/IWJT.2007.4279937

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  46. Ionization and low damage etching of soft materials with slow Ar cluster ions

    Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Yoshiro Honda, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of 8th Workshop on Cluster Ion Beam Technology   頁: 41 - 46   2007年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  47. クラスターイオン照射における二次イオン収率の入射サイズ依存性

    市木 和弥, 二宮 啓, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    表面科学講演大会講演要旨集26 巻 ( 0 ) 頁: 108 - 108   2006年

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    出版者・発行元:公益社団法人 日本表面科学会  

    クラスターイオンは単原子イオンと比較して、低速で高エネルギー密度での照射が容易であるため、高精度かつ高効率な表面分析、表面改質が可能とされている。しかし、クラスターと固体表面との相互作用は十分に理解されていない。よって本研究では、クラスターイオン照射によりSi試料から放出される二次イオン収率の入射サイズ依存性を飛行時間型質量分析法を用いて分析し、クラスター照射効果について考察する。

  48. 26pWD-7 サイズ選別されたクラスターイオンにより生成される二次イオンの測定(26pWD 放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    二宮 啓, 市木 和弥, 中田 由彦, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    日本物理学会講演概要集61 巻 ( 0 ) 頁: 126 - 126   2006年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.61.2.2.0_126_3

  49. The effect of incident cluster ion size on secondary ion yields emitted from Si

    Satoshi Ninomiya, Kazuya Ichiki, Yoshihiko Nakata, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of 7th Workshop on Cluster Ion Beam and Advanced Quantum Beam Process Technology   頁: 148 - 154   2006年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  50. Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere

    Kazuya Ichiki, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo  

    Extended Abstracts of 7th Workshop on Cluster Ion Beam and Advanced Quantum Beam Process Technology   頁: 124 - 129   2006年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  51. Arクラスターイオン衝撃により生体高分子薄膜から放出される二次イオン収率の入射サイズ依存性

    二宮 啓, 市木 和弥, 中田 由彦, 瀬木 利夫, 青木 学聡, 松尾 二郎  

    表面科学講演大会講演要旨集26 巻 ( 0 ) 頁: 106 - 106   2006年

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    出版者・発行元:公益社団法人 日本表面科学会  

    クラスターイオンをプローブとする有機物の二次イオン質量分析は、単原子イオンと比較して収率が高く試料の損傷も少ない。しかしクラスター照射での収率増加機構や最大収率を与えるための入射サイズの最適化については、ほとんど研究されていない。そこで本研究ではサイズ選別したArクラスターをアミノ酸薄膜に照射し、二次イオンを飛行時間型質量分析法を用いて測定することにより収率の入射サイズ依存性について調べた。

  52. 28aTA-6 スパッタリングにおけるイオン化確率の入射クラスターイオン種依存性(28aTA 放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    二宮 啓, 青木 学聡, 瀬木 利夫, 中田 由彦, 市木 和弥, 松尾 二郎  

    日本物理学会講演概要集61 巻 ( 0 ) 頁: 155 - 155   2006年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.61.1.2.0_155_2

  53. Molecular dynamics simulations of the cluster-size effect on the sputtering process with reactive gas cluster ions

    Takaaki Aoki, Jiro Matsuo  

    Materials Research Society Symposium Proceedings908 巻   頁: 18 - 24   2005年12月

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    To investigate the size-effect of reactive clusters on sputtering processes, we performed molecular dynamics (MD) simulations of reactive cluster ions with various sizes impacting on solid targets. Various sizes of fluorine clusters, (F2)30, (F2)300 and (F 2)3000, were irradiated on a Si(100) target at the same total incident energy of 6 keV. These clusters were irradiated on the same target one after another in order to reproduce real experimental conditions such as the accumulation of fluorine atoms in the target. The MD simulations of sequential cluster impacts enabled to perform various statistical analyses regarding the sputtered particles. The study of cluster size distributions showed that the sputtering process by reactive cluster ion impact has similarity with the emission from quasi-liquid materials excited to hyper-thermal conditions by ion bombardment. However, the major sputtered particles were different with each other; Si for (F2)30 (100 eV/atom), SiF2 for (F2)300 (10 eV/atom), and SiF 3 for (F2)3000 (1 eV/atom). At the impact of a large size cluster with low incident energy, a large number of Si-F bondings were generated at the cluster-target interface surface, which enhances formation of volatile SiFx compounds with many fluorine atoms. In contrast, a small cluster with high kinetic energy-per-atom could cause the formation of numerous energetic surface atoms at the near surface region, which could be sputtered without being well fluoridated. © 2006 Materials Research Society.

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  54. Size and energy distribution of gas cluster ion beam measured by energy resolved time of flight mass spectroscopy

    Kakuta S, Seki T, Sasaki S, Furusawa K, Aoki T, Matsuo J  

    SURFACE & COATINGS TECHNOLOGY196 巻 ( 1-3 ) 頁: 198 - 202   2005年6月

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    記述言語:英語   出版者・発行元:Surface and Coatings Technology  

    Energy resolved time of flight (ERTOF) mass spectroscopy has been developed to measure the energy and size distributions in a gas cluster ion beam (GCIB). Gas cluster ions, being aggregates of a few to several thousands of atoms, were generated by the ionization of neutral clusters, which were created by the adiabatic expansion of a high pressure gas into a vacuum. As a result of the large cross section of cluster ions, the cluster size can be easily reduced by collision with fast neutrals and monomer ions. An ERTOF system consisted of a retarding grid in front of a drift tube with a pair of deflection electrodes that acted as a gate. This system was attached to an ionization chamber, where Ar gas clusters, generated by a nozzle in a source chamber, were ionized by electron impact. Current waveforms were measured with ERTOF as an increasing voltage was applied to the retarding grid. The size distribution of clusters having a particular kinetic energy was calculated from the difference in the current waveform obtained at a corresponding retarding voltage to that at a larger voltage. Using ERTOF, it was found that the GCIB consisted of two components; small sized clusters with low kinetic energy and large sized clusters with high kinetic energy. It was also noted that the depth to which a substrate, on which the cluster beam impinged, was etched increased with the proportion of large clusters to the GCIB, since the small clusters, resulting from disintegration of large sized clusters by collisions with monomer ions, fast neutrals and residual gas molecules, have too low a kinetic energy to remove atoms from the surface. Note that the etched depth was affected by both the energy and size distribution of cluster ions. Therefore, ERTOF measurement could be utilized to assure the reproducibility of processes for the manufacture of semiconductors and magnetic recording heads. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2004.08.129

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  55. Large Cluster Ions as Projectiles for SIMS-Opportunities and Challenges 査読有り

    Jiro Matsuo, Takaaki Aoki, Toshio Seki  

    Proceedings of 18th Annual Workshop on SIMS   頁: 29 - 32   2005年5月

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(全国大会,その他学術会議)  

  56. Secondary neutral and ionized particle measurements under MeV-energy ion bombardment

    Nakata Y, Ninomiya S, Imada C, Nagai M, Aoki T, Matsuo J, Imanishi N  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS230 巻 ( 1-4 ) 頁: 489 - 494   2005年4月

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    記述言語:英語   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    We have measured both secondary neutral and ionized particles from an InSb target under 3.0 MeV Si ion bombardment. Measurements of both ions and neutrals have not been carried out so far in the MeV-energy range. The mass spectra and axial emission energy distributions of secondary particles were investigated. Secondary ions were measured with a linear- and a reflective-type time-of-flight technique, whereas secondary neutral particles were photo-ionized by a UV pulsed laser (ArF: 193 nm) and measured with a reflective-type time-of-flight technique. Different results were obtained for neutral particles in comparison with ionized particles. The mean energy of neutral Sb atoms was much lower than that of neutral In atoms, whereas the mean energies of secondary In and Sb ions were nearly equal. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.12.089

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  57. Total sputtering yields of solids under MeV-energy Si ion bombardment

    Ninomiya S, Imada C, Nagai M, Nakata Y, Aoki T, Matsuo J, Imanishi N  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS230 巻 ( 1-4 ) 頁: 483 - 488   2005年4月

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    記述言語:英語   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Total sputtering yields have been measured for SiO2 and Cu targets bombarded with Si ions at an incident energy between 500 keV and 5.0 MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have developed a beam modulation technique to avoid the effect of thermal drift. In the MeV energy range, an ion penetrates through thin SiO2 and Cu targets and is implanted into a quartz crystal. Therefore, the thickness of these layers deposited on quartz crystals was carefully controlled to avoid damage of quartz crystal by incident ions. As a result, total sputtering yields of SiO2 increased with incident Si ion energy, while those of the Cu target decreased. The total yields of the SiO2 target were represented well by a power low of the electronic stopping power. © 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.12.088

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  58. Molecular dynamics simulations of sequential cluster ion impacts

    Aoki T, Matsuo J  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS228 巻 ( 1-4 SPEC. ISS. ) 頁: 46 - 50   2005年1月

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    記述言語:英語   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of cluster and solid target collisions were performed in order to understand the relationship between surface deformation processes and cluster sizes. MD simulations of single impacts of clusters with various sizes showed that, when a cluster size is less than 10 000 atoms, a crater-like damage could be caused at 20 keV of total energy, while no damage was observed at Ar 10 000 and Ar 20 000 clusters. The surface morphology change was examined by MD of sequential irradiation of Ar clusters under various conditions. When the initial roughness of the surface was about 10 Å in r.m.s. and the total incident energy was 20 keV, the surface roughness was reduced with the impact of Ar 13 333 or larger cluster. The MD results give information about the final value and decay speed of surface roughness, which are required to optimize the cluster ion irradiation condition for various nano-scale modification processes. © 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2004.10.021

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  59. 19pYR-5 巨大ガスクラスターイオン衝突による半導体材料からの二次イオン放出(放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    二宮 啓, 青木 学聡, 瀬木 利夫, 松尾 二郎  

    日本物理学会講演概要集60 巻 ( 0 ) 頁: 56 - 56   2005年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.60.2.2.0_56_2

  60. 25aYJ-9 高速イオン衝撃スパッタリングによる中性粒子の収量及び放出エネルギー測定(放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    中田 由彦, 二宮 啓, 青木 学聡, 土田 秀次, 松尾 二郎, 伊藤 秋男  

    日本物理学会講演概要集60 巻 ( 0 )   2005年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

  61. 25aYJ-6 複数の方法で測定した全スパッタリング収率の比較(放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    二宮 啓, 中田 由彦, 青木 学聡, 松尾 二郎, 伊藤 秋男  

    日本物理学会講演概要集60 巻 ( 0 )   2005年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

  62. 19pYR-9 MeV重イオン衝撃スパッタリングによる励起状態分子放出(放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))

    中田 由彦, 二宮 啓, 青木 学聡, 土田 秀次, 松尾 二郎, 伊藤 秋男  

    日本物理学会講演概要集60 巻 ( 0 )   2005年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

  63. Exprimental study of cluster size effect with size-selected cluster ion beam

    Toyoda N., Houzumi S., Aoki T., Yamada I.  

    Novel Materials Processing by Advanced Electromagnetic Energy Sources   頁: 219 - 222   2005年

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    記述言語:英語   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    This chapter reveals the experimental study of cluster size effect with size-selected cluster ion beam. A size-selected gas cluster ion beam (GCIB) system is developed to study the size effects of energetic large cluster ion bombardments on a solid surface for the first time. This system equipped a permanent magnet with a magnetic flux density of 1.2 T. There is a sliding detector and sample holder on a guiding rail perpendicular to the incoming cluster beam axis. By locating a sample at a certain position, particular size of cluster ion can be irradiated continuously with affordable ion current density. When the total acceleration energy of Ar-GCIB is 5keV, both amorphous and oxide thickness on silicon (Si) substrate increased with decreasing cluster size. This result showed good agreement with that obtained from molecular dynamics simulations. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50044-1

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  64. Surface structure dependence of impact processes of gas cluster ions

    Aoki T., Matsuo J., Yamada I.  

    Novel Materials Processing by Advanced Electromagnetic Energy Sources   頁: 231 - 234   2005年

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    記述言語:英語   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    This chapter discusses the surface structure dependence of impact processes of gas cluster ions. The surface modification processes utilizing the impact of large cluster ions is also proposed. One of the unique properties of cluster ion impact is that the low-energy and high-density atomic irradiation can be realized simultaneously. This characteristic impact process causes local heating, large motion, and chemical excitation of the surface atoms. Many experiments proved that cluster irradiation shows remarkable advantages in thin film formation, surface smoothing, and high-rate and high-aspect etching. Surface smoothing is one of the important applications of cluster ion irradiation and is used for industrial applications. Molecular dynamics simulations are performed in order to understand the relationship between surface deformation process and surface structure. It is found that the collisional process of cluster is different depending on local surface morphology where the cluster impacts. When a cluster impacts close to the peak point, the hill structure is made flat and the surface atoms comprising the hill are moved away and deposited on the valley. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50047-7

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  65. Low damage smoothing of magnetic materials using oblique irradiation of gas cluster ion beam

    S Kakuta, S Sasaki, K Furusawa, T Seki, T Aoki, J Matsuo  

    Surface Engineering 2004 - Fundamentals and Applications843 巻   頁: 183 - 188   2005年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Oblique irradiation using a gas cluster ion beam (GCIB) has been studied in order to achieve low-damage smoothing of magnetic materials. We investigated how the surface morphology and surface roughness depended on the angle of incidence. Quite smooth surfaces could be obtained using both normal and grazing-incidence irradiation. At incident angles larger than 45 degrees, periodic ripples were formed. The orientation of the ripples changed from perpendicular to parallel with respect to the GCIB when the incident angle exceeded a critical value. Surface roughening resulting from the formation of ripples was observed at incident angles between 45 degrees and 65 degrees. Fluctuations in the Ni/Fe component ratio and the intermixing of oxygen from the native oxide were evaluated. As the angle of incidence increased, both the thickness of the layer in which the component ratio was fluctuating and the depth of oxygen intermixing decreased. As a result, it was determined that low-damage smoothing of magnetic materials could be performed by using grazing-incidence irradiation from a GCIB.

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  66. Gas cluster ion beam source for secondary ion emission measurements

    Ono L., Aoki T., Seki T., Matsuo J., Itoh A.  

    Novel Materials Processing by Advanced Electromagnetic Energy Sources   頁: 227 - 230   2005年

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    記述言語:英語   出版者・発行元:Novel Materials Processing by Advanced Electromagnetic Energy Sources  

    This chapter discusses the gas cluster ion beam source for secondary ion emission measurements. When solids are bombarded with cluster ions, collision cascades induced by individual constituent atoms of the cluster overlap each other. Energy density deposited with cluster ions is much higher than that deposited with monomer ions at the same velocity. Thus, subsequent phenomena, such as material modifications or secondary particle emissions, are enhanced under the impact of 'n'- atom clusters compared to the sum over 'n' atomic ions. These enhancements are generally called "nonlinear effects". The feature of secondary ion yield as a function of primary beam energy could be compared for monomer and cluster impacts. For monomer impacts the emission of ionized species has similarities with the emission of neutral species, showing that these processes proceed by a common mechanism. For large cluster impacts, the sputtering yield increases linearly with the primary ion energy. © 2005 Elsevier Ltd.

    DOI: 10.1016/B978-008044504-5/50046-5

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  67. Surface structure dependence of impact processes of gas cluster ions

    Aoki T, Matsuo J  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS216 巻 ( 1-4 ) 頁: 185 - 190   2004年2月

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    記述言語:英語   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    Molecular dynamics (MD) simulations of Ar cluster impacts on Si surfaces were performed in order to examine the evolution of surface morphology with cluster irradiations. The MD results revealed that the impact process of cluster is different depending on surface structure around the impact point. When a large cluster, which consists of several thousands atoms and is accelerated with several tens keV, impacts on a plane surface, large number of surface atoms were moved simultaneously and a crater-like shape was left on the surface. On the other hand, the impacts on surface with nano-scale peak and valley structure showed that the impact processes of cluster ions are different depending on the local morphology of the impact points. When a cluster impacts close to a peak, the hill structure is made flat and the surface atoms constitute the hill are moved away and deposited on the valley. At the impact on valley region, however, incident cluster atoms concentrate in the bottom of the valley, which causes a crater-like structure with narrower opening and deeper hole compared with that at plain surface. The change of surface roughness have shown that, when a surface structure has similar scale with the area where the surface is deformed by cluster impact, the surface roughness decreases or increases depending on the impact point. This result indicates that the final state of surfaces roughness and morphology can be estimated. © 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nimb.2003.11.077

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  68. 12aTG-5 MeV エネルギー領域での絶縁体及び金属の全スパッタリング収率測定(放射線物理, 領域 1)

    二宮 啓, 中田 由彦, Aoki T, 松尾 二郎, 伊藤 秋男  

    日本物理学会講演概要集59 巻 ( 0 )   2004年

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    記述言語:日本語   出版者・発行元:一般社団法人 日本物理学会  

  69. Experimental study of cluster size effect with size-selected cluster ion beam system

    N Toyoda, S Houzumi, T Aoki, Yamada, I  

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS792 巻   頁: 623 - 628   2004年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    A size-selected gas cluster ion beam (GCIB) system has been developed to study the size effects of energetic large cluster ion bombardments on a solid surface for the first time. This system equipped a permanent magnet with a magnetic flux density of 1.2 T. There is a sliding detector and sample holder on a guiding rail perpendicular to the incoming cluster beam axis. By locating a sample at a certain position, particular size of cluster ion can be irradiated continuously with affordable ion current density. When the total acceleration energy of Ar-GCIB was 5keV, both amorphous and oxide thickness on Si substrate increased with decreasing cluster size. This result showed good agreement with that obtained from molecular dynamics simulations.

    Web of Science

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  70. Molecular dynamics study of surface morphological evolution by cluster impacts

    T Aoki, J Matsuo, Yamada, I  

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS792 巻   頁: 497 - 502   2004年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    In order to understand the characteristics of surface modification process with cluster ion irradiation, molecular dynamics simulations of Ar cluster impacting on Si surface with various surface structures were carried out. It was found that the surface morphology is dynamically deformed with only one cluster impact and the impact process of cluster is different depending on the local surface structure. For example, when an Ar-2000 cluster accelerated with 20keV impacted on the convex point of the surface, the hill was compressed and the impact area was smoothed. At the impact on a concave point, a deeper crater was formed compared with the impact on a flat surface. On the other hand, the MD simulations of sequential impacts of large clusters were performed. It was found that the small tip structures on the surface could be removed easily with cluster irradiation. It was shown that surface roughness converges to 15similar to20Angstrom and this value agrees with the result obtained by single impact of cluster.

    Web of Science

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  71. Fast Neutral Ar Penetration during Gas Cluster Ion Beam Irradiation into Magnetic Thin Films 査読有り

    Shigeru Kakuta, Toshio Seki, Shinji Sasaki, Kenji Furusawa, Takaaki Aoki, Jiro Matsuo  

    MRS Proceedings792 巻   頁: R9.36.1 - R9.36.6   2004年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    Ar penetration during gas cluster ion beam (GCIB) irradiation has been investigated using secondary ion mass spectroscopy (SIMS). The concentration of Ar rose to a maximum and then decreased gradually with increasing depth. The depth of the Ar penetration peak increased in proportion to the cube root of the acceleration voltage of GCIB and was independent of ion dose. Ar penetration was attributed to fast neutrals in the GCIB and was successfully suppressed by decreasing the pressure of the space downstream of the GCIB or decreasing the monomer ion density in order to suppress charge transfer collisions.

    DOI: 10.1557/proc-792-r9.36

    Scopus

  72. Fast neutral Ar penetration during gas cluster ion beam irradiation into magnetic thin films

    S Kakuta, T Seki, S Sasaki, K Furusawa, T Aoki, J Matsuo  

    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS792 巻   頁: 599 - 604   2004年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Ar penetration during gas cluster ion beam (GCIB) irradiation has been investigated using secondary ion mass spectroscopy (SIMS). The concentration of Ar rose to a maximum and then decreased gradually with increasing depth. The depth of the Ar penetration peak increased in proportion to the cube root of the acceleration voltage of GCIB and was independent of ion dose. Ar penetration was attributed to fast neutrals in the GCIB and was successfully suppressed by decreasing the pressure of the space downstream of the GCIB or decreasing the monomer ion density in order to suppress charge transfer collisions.

    Web of Science

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  73. XAFS study of thin films fabricated with cluster ion assisted deposition technique 査読有り

    Jiro Matsuo, Teruyuki Kitagawa, Yutaka Shimizugawa, Hiroyuki Kageyama, Kazuhiro Kanda, Toshio Seki, Takaaki Aoki, Shinji Matsui  

    Trans. Mat. Res. Soc. Jpn.28 巻   頁: 101 - 106   2003年12月

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  74. Atomistic study of cluster collision on solid surfaces

    J Matsuo, T Seki, T Aoki, Yamada, I  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS206 巻   頁: 838 - 841   2003年5月

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    New surface modification processes have been demonstrated using gas cluster ion irradiations, because of the unique interaction between cluster ions and surface atoms, atomistic mechanisms of cluster ion bombardment must be understood for the further developments of this technology. Variable temperature scanning tunneling microscope in ultra high vacuum allows us to study ion bombardment effects on surfaces and nucleation growth at various temperatures.
    In the STM image of cluster-irradiated surface, large craters with diameter of about 10 nm were observed on Si(1 1 1)7 x 7 surfaces. The structure and size of the traces agree well with theoretical calculation. When the sample irradiated with Ar cluster was annealed at 600 degreesC, the hole remained, but the outer rim of the crater disappeared and the surface structure was reconstructed at the site of the rim. The depth of damage region in the target became shallower with decrease of the impact energy. These results indicate that low damage and useful surface modification can be realized using the cluster ion beam. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00874-7

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  75. Modeling of surface smoothing process by cluster ion beam irradiation

    A Nakai, T Aoki, T Seki, J Matsuo, GH Takaoka, Yamada, I  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS206 巻   頁: 842 - 845   2003年5月

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Smoothing effect is one of the advantages of cluster ion beam. It is important to estimate an ion dose to achieve required surface smoothness. The smoothing rate with cluster ion beam depends on surface profiles. In this work, modeling of surface smoothing process with cluster ion beams was examined. Ar cluster ions with an energy of 20 keV was irradiated on rough Si Surface. Fast Fourier transform was applied to atomic force microscope data of 100 x 100 mum(2), and power spectra were calculated. Smoothing rate depends on the wave number as well as the ion dose. Relationship between smoothing rate and wave number was derived. The surface smoothing process was modeled with the use of the wave number dependence of the smoothing rate. The calculated and the experimental surface profiles are in good agreements. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00875-9

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  76. Cluster species and cluster size dependence of damage formation by cluster ion impact

    T Aoki, J Matsuo, G Takaoka, Yamada, I  

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS206 巻   頁: 861 - 865   2003年5月

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Molecular dynamics simulations of Ne, Ar and Xe clusters with various sizes impacting on Si surfaces were performed in order to study damage formation processes. When cluster size ranged from several tens to several thousands and accelerated energy is 20 keV in total, each cluster impact caused surface damage in the shape of a crater. A larger number of displacements was found with the Xe cluster than Ne and Ar clusters of the same cluster size because the Xe cluster had a larger mass and momentum. However, when cluster size exceeded several thousands, different surface damage structures were formed depending on the cluster species. At a cluster size of 10,000, for example, a crater-like trace was still formed with a Ne cluster impact. However, both the depth of the crater and the number of displacements decreased as the atomic number of the cluster atom increased, which meant that the atomic and energy density irradiated on the surface is a dominant parameter in causing surface damage. These results indicate that the damage formation by cluster impact can be controlled by changing the cluster species as well as the incident energy and cluster size. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0168-583X(03)00879-6

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  77. Cluster Size Effect on Surface Modification Process using Cluster Ion Beam 査読有り

    Takaaki Aoki, Toshio Seki, Atsuko Nakai, Jiro Matsuo, Gikan H. Takaoka  

    Trans. Mat. Res. Soc. Jpn.28 巻 ( 2 ) 頁: 485 - 488   2003年1月

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

  78. Secondary ion mass spectrometry with gas cluster ion beams

    Toyoda N., Matsuo J., Aoki T., Yamada I., Fenner D.B.  

    Applied Surface Science203 巻   頁: 214 - 218   2003年1月

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    記述言語:英語   出版者・発行元:Applied Surface Science  

    Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. From MD simulations of Ar cluster ion impact on a Si substrate, the ion beam mixing by a cluster ion was heavier than that by Ar + at the same energy per atom, because the energy density at the impact point by clusters was extremely high. However, the sputtering yield with an Ar cluster ion was one or two orders of magnitude higher than that with Ar + at the same energy per atom. Comparing at the ion energy where the altered layer thickness was the same by both Ar cluster and Ar + impact, a cluster ion showed almost 10 times higher sputtering yield than Ar + . Preliminary experiment was performed with a conventional SIMS detector and a mass resolution of several nanometer was achieved with Ar cluster ions as a primary ion beam. © 2002 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0169-4332(02)00628-1

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  79. Study of Cluster-size Effect on Damage Formation 査読有り

    Aoki T., Seki T., Nakai A., Matsuo J., Takaoka G.  

    AIP Conference Proceedings680 巻   頁: 741 - 744   2003年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:AIP Conference Proceedings  

    Computer simulation and experiments were performed in order to understand the effect of cluster size on damage formation. Results of molecular dynamics simulations of cluster impact on solid targets derived the model function, which explains the relationship among cluster size, incident energy and number of displacements. On the other hand, time of flight mass measurement system was installed a cluster irradiation system, so that cluster ion beam which cluster size distribution is well known can be irradiated on the target. The damage properties under various cluster irradiation conditions were examined using RBS. The results from computer simulations and experiments showed good agreements with each other, which suggests that irradiation damage by cluster ion beam can be controlled by selecting cluster size distribution and incident energy.

    DOI: 10.1063/1.1619820

    Web of Science

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  80. Study of surface morphological evolution by cluster ion irradiation on solid targets 査読有り

    T Aoki, A Nakai, J Matsuo, G Takaoka  

    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS749 巻   頁: 311 - 316   2003年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Smoothing effect by large gas cluster ion irradiation was studied. Ar cluster ion beams were irradiated on rough Si surface with various ion dosage. 100x100mum(2) AFM image was measured for each surface. These AFM images were treated with fast Fourier transform in order to examine the change of surface morphologies with cluster ion irradiation. Power spectra analysis showed that the intensity at each wave number (the inverse number of wavelength) exponentially decreases with ion dose. The relationship between smoothing rate and wave number was derived. The surface smoothing process was modeled with the use of this wave number dependence on decreasing rate. The calculated and the experimental surface profiles are in good agreements. With this model, roughness of cluster-irradiated surface can be calculated from initial surface images.

    Web of Science

  81. 低エネルギーホウ素イオン注入におけるホウ素の蓄積・脱離過程のシミュレーション

    青木 学聡, 松尾 二郎, 高岡 義寛  

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス102 巻 ( 540 ) 頁: 25 - 28   2002年12月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代以降の微小CMOSデバイスの作製には,エネルギーが数百eVという低エネルギーイオン注入が必要となる.しかしながら,入射エネルギーの低下によりイオンの注入レンジが低下すると,入射イオン種の表面への析出やセルフスパッタリング等が生じ,実効的なイオンドーズ量の低下や,ドーズ量の制御が困難になるといわれている.今回,入射イオンの蓄積・脱離過程を調べるために,ホウ素イオンを連続的にシリコン表面に注入する分子動力学シミュレーションを行った.

  82. Study of damage formation by low-energy boron cluster ion implantation

    Aoki T., Matsuo J., Takaoka G.  

    Proceedings of the International Conference on Ion Implantation Technology22-27- 巻   頁: 560 - 563   2002年

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    記述言語:英語   出版者・発行元:Proceedings of the International Conference on Ion Implantation Technology  

    Cluster ion implantation using small boron cluster, decaborane (B10H14), has been proposed as the solution for shallow junction formation. Investigation of damage formation process by low-energy ion impact is important issue because diffusion and activation mechanism of dopant depend on the structure of defects in the substrate. In order to study difference of damage characteristics between monomer and cluster implantation, the molecular dynamics simulation of low-energy boron monomer and cluster (such like B4, B8 and B10) implantation into silicon substrate were performed. Additionally damage induced by boron monomer and cluster ion beam implantation is examined using RBS channeling method. From both simulation and experimental results, the amount and structure of defects caused by boron monomer/cluster implantation were discussed.

    DOI: 10.1109/IIT.2002.1258066

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  83. Threshold Energy for Generating Damage with Cluster Ion Irradiation 査読有り

    T. Seki, T. Aoki, A. Nakai, J. Matsuo, G.H. Takaoka  

    Materials Research Society Symposium - Proceedings749 巻   頁: 335 - 340   2002年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:Materials Research Society Symposium - Proceedings  

    In order to understand the damage formation by cluster ion irradiation, Si substrates were irradiated with Ar cluster ions at the acceleration energy of 1-20keV. The mean size of cluster was about 3000 atoms. The amount of damage after Ar cluster ion irradiation was measured with Rutherford backscattering spectrometry (RBS). The amount of damage was decreased with decrease of the energy and no damage formed at less than 2keV. This energy of 2keV represents the threshold energy to generate damage with the cluster size of 3000. According to Molecular dynamics (MD) simulation, the damage formation with cluster ion irradiation also depends on cluster size. The size dependence of amount of damage has been investigated experimentally. The cluster size distribution could be changed with the ionization condition and could be measured using Time-of-Flight (TOF) method. The threshold energy was increased with cluster size. These results indicate that undamaged films can be created by using large size of cluster ion with low acceleration energy.

    DOI: 10.1557/proc-749-w17.13

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  84. Ar Cluster Ion Bombardment Effects on Semiconductor Surfaces 査読有り

    Toshio Seki, Takaaki Tsumura, Takaaki Aoki, Jiro Matsuo, Gikan H. Takaoka, Isao Yamada  

    Mat. Res. Soc. Symp. Proceedings647 巻   頁: O9.4.1 - O9.4.6   2001年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)  

    DOI: 10.1557/proc-647-o9.4

  85. Photoluminescence study of defects induced by B<sub>10</sub>H<sub>14</sub> ions 査読有り

    N. Toyoda, T. Aoki, J. Matsuo, I. Yamada, K. Wada, L.C. Kimerling  

    Materials Research Society Symposium - Proceedings669 巻   頁: J4201-J4206   2001年

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    記述言語:英語  

  86. Molecular dynamics simulations of cluster ion impact on diamond surface 査読有り

    T. Aoki, J. Matsuo, G. Takaoka, I. Yamada  

    Materials Research Society Symposium - Proceedings650 巻   頁: [d]R3.40.1-R3.40.1   2001年

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    記述言語:英語  

  87. 分子動力学法を用いたFイオン照射によるSi表面エッチングのシミュレーション

    千葉 俊一, 青木 学聡, 松尾 二郎, 高岡 義寛  

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス100 巻 ( 517 ) 頁: 23 - 28   2000年12月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    反応性イオンエッチングにおいてイオン照射が果たす役割を解明するため, FイオンをSi表面に連続的に照射する分子動力学シミュレーションを行った.Fイオンの照射に伴い基板表面にSi原子とF原子の混合層が形成され, 一部がフッ化シリコン(Si_xF_y)として脱離した.平衡状態における基板表面やエッチング生成物が照射エネルギーの違いにより異なることが示され, 反応性イオンエッチングにおけるイオン照射の役割が明らかになった.

  88. Boron diffusion in ultra low-energy (<1 keV/atom) decaborane (B<sub>10</sub>H<sub>14</sub>) ion implantation 査読有り

    Takuya Kusaba, Norihiro Shimada, Takaaki Aoki, Jiro Matsuo, Isao Yamada, Kenichi Goto, Toshihiro Sugii  

    Proceedings of the International Conference on Ion Implantation Technology2 巻   頁: 1258 - 1261   1999年

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    記述言語:英語  

  89. Novel analysis techniques using cluster ion beams 査読有り

    J Matsuo, N Toyoda, M Saito, T Aoki, T Seki, Yamada, I  

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2475 巻   頁: 429 - 432   1999年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:AMER INST PHYSICS  

    Ion beams are used intensively for analytical applications. In order to meet the demands of the recent remarkable progress in material science, new ion beam analysis techniques based on large gaseous cluster ion beams are proposed. Cluster ion beams, which provide an equivalent low energy beam, offer many advantages for analytical technique. For instance, sputtering yields of the cluster ions are one or two orders of magnitude higher than monomer ions and smooth, flat surfaces can be maintained during the sputter depth profiling with cluster ions. These advantages are the result of multiple-collision and high local density energy deposition of cluster ions. Gaseous clusters such as argon or oxygen, as utilized in the analysis are generated by supersonic expansion. The beam current of the cluster ions is a few mu A which is sufficient for most analyses.

    DOI: 10.1063/1.59170

    Web of Science

  90. Computer simulation of decaborane implantation and rapid thermal annealing 査読有り

    Zinetulla Insepov, Takaaki Aoki, Jiro Matsuo, Isao Yamada  

    Proceedings of the International Conference on Ion Implantation Technology2 巻   頁: 807 - 810   1999年

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    記述言語:英語  

  91. デカボランイオン注入による損傷の形成とその増速拡散への影響

    草場 拓也, 瀬木 利夫, 青木 学聡, 松尾 二郎, 加勢 正隆, 後藤 賢一, 杉井 寿博, 山田 公  

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス98 巻 ( 445 ) 頁: 97 - 104   1998年12月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    低エネルギーデカボランイオン注入における損傷の形成とその増速拡散への影響について検討をおこなった。デカボランの注入エネルギーの低下に伴い、増速拡散は抑制される。また、3keVのデカボランイオン注入においてドーズ量1×10^14〜10^15atoms/cm^2の範囲では、基板表面近傍にアモルファス層が形成されているために、拡散距離は注入ドーズ量に依存しないことが明らかとなった。さらに、デカボランイオン注入においては、実効注入エネルギーの等しい単原子ボロンよりも多くの損傷を形成できることが分かった。約65%の注入効率が得られることが明らかとなった。

    CiNii Books

  92. クラスターイオン注入とデバイスプロセス

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡  

    真空41 巻 ( 11 ) 頁: 932 - 939   1998年

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    記述言語:英語   出版者・発行元:一般社団法人 日本真空学会  

    DOI: 10.3131/jvsj.41.932

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  93. Computer simulation of annealing after cluster ion implantation 査読有り

    Z Insepov, T Aoki, J Matsuo, Yamada, I  

    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING532 巻   頁: 147 - 152   1998年

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    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single BC implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, similar to 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

    Web of Science

  94. Size dependence of bombardment characteristics produced by cluster ion beams 査読有り

    T Seki, M Tanomura, T Aoki, J Matsuo, Yamada, I  

    ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS504 巻   頁: 93 - 98   1998年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Cluster ion beam processes provide new surface modification techniques, such as surface smoothing, high rate sputtering and very shallow implantation, because of the unique interactions between cluster and surface atoms. To understand interactions with cluster and surface, Scanning Tunneling Microscope (STI) observations have been done for single impact traces.
    Highly Oriented Pyrolitic Graphite (HOPG) surfaces were bombarded by carbon cluster ions (Va less than or equal to 300kV), and large ridges and craters have been observed as a result of single cluster ion impact. The impact site diameters are proportional to the cluster size up to 10 atoms, and increase drastically for cluster sizes above 10. This indicates that non-linear multiple collisions occur only when a local area is bombarded by more than 10 atoms at the same time.

    Web of Science

  95. Molecular dynamics simulation of fullerene cluster ion impact 査読有り

    T Aoki, T Seki, M Tanomura, J Matsuo, Z Insepov, Yamada, I  

    ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS504 巻   頁: 81 - 86   1998年

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    記述言語:英語   掲載種別:研究発表ペーパー・要旨(国際会議)   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    In order to interpret the projection range and to reveal the mechanism of damage formation by cluster ion impact, molecular dynamics simulations of a fullerene carbon cluster (C-60) impacting on diamond (001) surfaces were performed. When the kinetic energy of C-60 is as low as 200eV/atom, C-60 implants into the substrate deeper than a monomer ion with the same energy per atom because of the clearing-way effect. The kinetic energy of the cluster disperses isotropically because of the multiple-collision effect, and then a large hemispherical damage region is formed. When the energy of the cluster is as high as 2keV/atom, the cluster dissociates in the substrate, and then cascade damage is formed Like in a case of a monomer ion impact. The projection range of incident atoms becomes similar to that of the monomer with the same energy per atom. However, the number of displacements of C-60 is larger than the summation of 60 monomer carbons. The displacement yield of fullerene is 4 to 7 times higher than that of monomer carbon. This result agrees with the measurement of the displacements made on sapphire substrates with C-60 and C-2 irradiation.

    DOI: 10.1557/proc-504-81

    Web of Science

  96. Ultra shallow junction formation by cluster ion implantation 査読有り

    J Matsuo, T Aoki, K Goto, T Sugii, Yamada, I  

    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING532 巻   頁: 17 - 22   1998年

     詳細を見る

    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Implantation of B cluster ions into Si using decaborane (B10H14) has been demonstrated. SIMS measurements show that the depth distribution of boron atoms implanted with a monomer ion is exactly matched by that of boron atoms implanted from decaborane ions, if the cluster ion has an order of magnitude larger acceleration energy. According to the Langmuir-Child equation, two orders of magnitude larger space-charge limited ion beam current is possible when decaborane ions are used. Implanted boron atoms from decaborane ions are electrically activated after annealing. Junction depth of the implanted layer with 3 keV decaborane ions is approximately 20nm after annealing at 900 degrees C. Molecular dynamic caluculations show that implantation efficency of boron monomer ions and decaborane ions are the same. However, the number of displaced silicon atoms per implanted boron atom from a decaborane ion impact is 4 times larger than that by boron monomer impact so that a heavily damaged region is created near the impact zone by decaborane ion penetration.

    Web of Science

  97. ガスクラスターイオンビームによる表面エッチング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡, INSEPOV Zinetulla  

    表面科学18 巻 ( 12 ) 頁: 743 - 751   1997年12月

     詳細を見る

    記述言語:日本語   出版者・発行元:日本表面科学会  

  98. ガスクラスターイオンビームプロセッシング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡  

    電気学会研究会資料. MC, 金属・セラミックス研究会1997 巻 ( 1 ) 頁: 27 - 34   1997年11月

     詳細を見る

    記述言語:日本語  

  99. ガスクラスターイオンビームによる表面エッチング

    山田 公, 松尾 二郎, 豊田 紀章, 青木 学聡, INSEPOV Zinetulla  

    表面科学18 巻 ( 12 ) 頁: 743 - 751   1997年

     詳細を見る

    記述言語:日本語   出版者・発行元:公益社団法人 日本表面科学会  

    Sputtering with gas cluster ions, which are aggregates of a few thousands of atoms, has been investigated experimentally and theoretically. Cluster ion beam etching is equivalent to low-energy high-current ion etchings with very low damage. Interesting new phenomena resulting from multiple collisions of incoming atoms in a very localized area were found. A surface smoothing effect is one of the typical phenomena, which is caused by lateral sputtering in which many atoms are ejected from the substrate in a lateral direction. Molecular dynamics simulation clearly shows that these sputtered atoms are ejected from the edge of craters formed by cluster ion impact.

  100. Cluster ion implantation for shallow junction formation 査読有り

    J Matsuo, D Takeuchi, T Aoki, Yamada, I  

    ION IMPLANTATION TECHNOLOGY - 96   頁: 768 - 771   1997年

     詳細を見る

    記述言語:英語   出版者・発行元:I E E E  

    The implantation of Ar and B into Si by cluster ion has been examined. Shallow implantation was clearly demonstrated with a high energy cluster ion. The damage layer thickness is less than 200 Angstrom, when 150keV Ar cluster ions are implanted into Si. This thickness is one order of magnitude smaller than that by Ar monomer ion bombardment with the same total energy. The thickness of the damaged layer formed by cluster ion bombardment increased with the cluster size, when the total energy of cluster ion remain the same. This is one of the non-linear effect of cluster implantation. Poly-atomic cluster-ion implantation with decaborane has also been demonstrated. Shallow implantation (&lt;0.05 mu m) can be achieved by decaborane(B10H14) ions. The sheet resistance of the sample reached a few hundred Omega/square after annealing at 1000 degrees C for 10s.

    Web of Science

  101. Range and damage distribution in cluster ion implantation 査読有り

    Yamada, I, J Matsuo, EC Jones, D Takeuchi, T Aoki, K Goto, T Sugii  

    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING438 巻   頁: 363 - 374   1997年

     詳細を見る

    記述言語:英語   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    Cluster ion implantation is an attractive alternative to conventional ion implantation, particularly for shallow junction formation. It is easy to obtain high-current ion beams with low equivalent energy using cluster ion beams. The implanted boron distribution in 5keV B10H14 implanted Si is markedly shallower than that in 5keV BF2 ion implanted Si. The implanted depth is less than 0.04 mu m, indicating that cluster ion implantation is capable of forming shallow junctions. The sheet resistance of 3keV B10H14 implanted samples falls below 500 Omega/sq after annealing at 1000 degrees C for 10s. Shallow implantation can be realized by a high energy cluster beam without space-charge problems in the incident beam. Defect formation, resulting from local energy deposition and multiple collisions, is unique for cluster ions. The thickness of the damaged layer formed by cluster ion bombardment increases with the size of the cluster, if implant energy and ion dose remain constant. This is one of the nonlinear ''cluster effects,'' which may allow some control over the implant damage distributions that accompany implanted ions, and which have been shown to have a great effect on dopant redistribution during annealing.

    Web of Science

    J-GLOBAL

  102. 分子動力学法によるホウ素クラスターイオン注入のシミュレーション

    青木 学聡, 島田 規広, 竹内 大輔, 松尾 二郎, Insepov Zinetulla, 山田 公  

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス96 巻 ( 396 ) 頁: 49 - 54   1996年12月

     詳細を見る

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    数十から数千の原子集団であるクラスターをイオン化し,照射するクラスターイオンビーム法は,等価的に低エネルギーのイオン照射を可能とする.サイズ13のBクラスターに1原子あたり230eVのエネルギーを与え,Si(100)表面に衝突させるシミュレーションを行った結果,230eVの単原子Bと同様の注入分布が得られた.またクラスターサイズを13,43,169と大きくするに従い,等しい総加速エネルギーでありながら,Bの注入深さが浅くなり,チャネリングを生じるB原子の割合が減少することが分かった. これらの事からクラスターイオンビーム法が浅い注入層形成に対する有効な手法であることが示された.

▼全件表示

講演・口頭発表等 170

  1. 情報基盤系教職員向け研究データ管理(RDM)教材の検討・制作

    元木 正和, 古川 雅子, 青木 学聡

    第56回 インターネットと運用技術研究発表会  2022年3月7日 

     詳細を見る

    開催年月日: 2022年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

  2. 統合・融合・集合で進める東海国立大学機構情報システム 招待有り

    青木 学聡

    北海道地区大学情報システム研究会  2022年2月3日 

     詳細を見る

    開催年月日: 2022年2月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

  3. 統合・融合・集合で進める東海国立大学機構情報システム 招待有り

    青木 学聡

    東海地区国公立大学情報システム研究会  2022年1月7日 

     詳細を見る

    開催年月日: 2022年1月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

  4. 情報基盤スタッフ向けRDM教材の検討

    元木正和, 古川雅子, 青木学聡

    大学ICT推進協議会2021年度年次大会  2021年12月15日  大学ICT推進協議会

     詳細を見る

    開催年月日: 2021年12月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

    開催地:幕張メッセ(千葉県)   国名:日本国  

  5. 大学における研究データ管理とは? 招待有り

    青木 学聡

    総合研究大学院大学2021年度附属図書館職員研修会  2021年12月10日 

     詳細を見る

    開催年月日: 2021年12月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

  6. 大学における研究データ管理の体制と具体方策 招待有り

    青木 学聡

    研究データポリシーの策定と管理・共有・活用  2021年10月29日  地域科学研究会・高等教育情報センター

     詳細を見る

    開催年月日: 2021年10月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

    開催地:オンライン   国名:日本国  

  7. 組織的RDM支援サービスのためのエンタープライズアーキテクチャの検討

    青木 学聡

    第6回京都大学研究データマネジメントワークショップ  2021年9月24日 

     詳細を見る

    開催年月日: 2021年9月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

  8. 組織的RDM支援サービスのためのエンタープライズアーキテクチャの検討

    青木 学聡

    情報処理学会IOT研究会  2021年9月6日 

     詳細を見る

    開催年月日: 2021年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

  9. デジタルユニバーシティ構想 実現に向けた活動計画

    青木 学聡

    東海国立大学機構デジタルユニバーシティシンポジウム  2021年7月16日 

     詳細を見る

    開催年月日: 2021年7月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

  10. 大学での研究データマネジメントの今

    青木 学聡

    教育ITソリューションEXPO  2021年6月23日 

     詳細を見る

    開催年月日: 2021年6月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

  11. introduction of Research Data Utilization Forum, Japan 招待有り 国際会議

    AOKI, Takaaki

    Workshop on “Open Science and Nuclear Energy Research Data”  2021年5月28日 

     詳細を見る

    開催年月日: 2021年5月

    記述言語:英語   会議種別:シンポジウム・ワークショップ パネル(指名)  

  12. 東海国立大学機構における Plus-DXの取り組み

    青木 学聡

    大学等におけるオンライン教育とデジタル変革に関するサイバーシンポジウム「教育機関DXシンポ」  2021年5月14日 

     詳細を見る

    開催年月日: 2021年5月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

  13. ナノ科学から見たRDM

    青木学聡

    第4回京都大学研究データマネジメントワークショップ  2020年9月19日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2020年9月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

    国名:日本国  

  14. A Campus-wide Survey of Consciousness on Research Datasets 国際会議

    Toshihiko Iyemori, Takaaki Aoki, Shoji Kajita, Tamaki Motoki, Tomoko Kawaguchi, Eriko Amano

    2020 9th International Congress on Advanced Applied Informatics (IIAI-AAI)  2020年9月8日 

     詳細を見る

    開催年月日: 2020年9月

    記述言語:英語   会議種別:口頭発表(一般)  

  15. ORCIDと研究者情報流通 招待有り

    青木学聡

    ORCID日本コンソーシアム・キックオフミーティング  2020年2月28日  ORCID日本コンソーシアム

     詳細を見る

    開催年月日: 2020年2月

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:東京工業大学+遠隔会議  

    その他リンク: https://orcid-jp.net/2020/01/22/orcid-kickoff/

  16. 研究データ管理に関するアンケート共同実施の取り組み

    青木学聡, 船守美穂, 松原茂樹, 結城憲司, 宮本貴朗, 西村浩二

    第3回京都大学研究データマネジメントワークショップ  2020年2月27日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2020年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  17. 京都大学での研究データ公開に関するアンケートと個別調査

    家森 俊彦, 青木 学聡, 梶田 将司, 元木 環, 川口 朋子, 天野 絵里子

    第3回京都大学研究データマネジメントワークショップ  2020年2月27日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2020年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  18. Research Ecosystem and legendary scientific software 国際会議

    Aoki Takaaki

    ELEVENTH INTERNATIONAL MEETING ON RECENT DEVELOPMENTS IN THE STUDY OF RADIATION EFFECTS IN MATTER  2020年1月15日 

     詳細を見る

    開催年月日: 2020年1月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:メキシコ合衆国  

  19. 機関研究情報システムの内外展開とこれからの課題 招待有り

    青木 学聡

    第2回 SPARC Japan セミナー2019 「オープンサイエンスを支える研究者情報サービスとその展望」  2019年12月20日 

     詳細を見る

    開催年月日: 2019年12月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

    情報のデジタル化,ネットワーク化のトレンドは研究情報においても例外ではなく,構成員及び組織の現況を収集,整理,提供するための研究情報システムは,機関の重要な情報インフラとして認識されつつある。その背景には,外部環境として著作物や知的財産に関する情報流通網の整備,内的な動機としてデータに基づく機関のパフォーマンスとポテンシャル評価の重視等,様々な要因がある。本講演では,京都大学の研究情報システム(教育研究活動データベース)の事例を中心に,機関内外双方の横断的な研究情報流通システムの構築と利活用の展開を紹介するとともに,これからの機関研究情報システムに求められる機能,制度,効果について議論を深める。

  20. イオンビーム研究のための研究データマネジメント環境の設計 国際会議

    青木 学聡

    第29回日本MRS年次大会  2019年11月27日  日本MRS

     詳細を見る

    開催年月日: 2019年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:産業貿易センター   国名:日本国  

  21. 大学での研究データマネジメントの全学的取組み 招待有り

    青木 学聡

    研究・実験データの保管・共有の推進方策Ⅱ  2019年7月26日 

     詳細を見る

    開催年月日: 2019年7月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

  22. 京都大学とORCID(2019年度版) 招待有り

    青木 学聡

    ORCID Japan Workshop  2019年6月28日 

     詳細を見る

    開催年月日: 2019年6月

    記述言語:日本語   会議種別:口頭発表(一般)  

    その他リンク: https://dx.doi.org/10.6084/m9.figshare.11368031

  23. 研究データマネジメントに対する共通理解 招待有り

    青木 学聡

    Japan Open Science Summit 2019 「研究データマネジメント人材の育成を展望する」  2019年5月28日 

     詳細を見る

    開催年月日: 2019年5月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

    その他リンク: https://dx.doi.org/10.6084/m9.figshare.8251517

  24. 京都大学研究データマップ (2019.02.28初版)

    家森 俊彦, 川口 朋子, 元木 環, 青木 学聡, 梶田 将司, 天野 絵里子

    第2回京都大学研究データマネジメントワークショップ  2019年2月28日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2019年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  25. 京都大学の研究データ保存環境のこれまで

    青木 学聡

    第2回京都大学研究データマネジメントワークショップ  2019年2月28日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2019年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  26. ルーブリックによるRDMへの共通理解

    青木 学聡

    第2回京都大学研究データマネジメントワークショップ  2019年2月28日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2019年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  27. 京都大学におけるデータマネジネントの現状 : アンケート調査・ヒアリング調査報告

    川口 朋子, 家森 俊彦, 元木 環, 青木 学聡, 梶田 将司

    第2回京都大学研究データマネジメントワークショップ  2019年2月28日  京都大学アカデミックデータ・イノベーションユニット

     詳細を見る

    開催年月日: 2019年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  28. 大学でのオープンサイエンスと研究データ管理 招待有り

    青木 学聡

    平成30年度大阪大学職員研修「オープンサイエンスの基礎知識:大学と研究データ」  2019年2月15日 

     詳細を見る

    開催年月日: 2019年2月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

    開催地:大阪大学サイバーメディアセンター(大阪府茨木市)  

  29. 倫理審査申請システムと連携した臨床研究情報(必須文書/臨床研究データ)の 長期保管システムと臨床研究マスターファイルを組み合わせた臨床研究情報の 統合管理システムの構築

    多田 春江, 竹之内 沙弥香, 青木 学聡, 船越 千尋, 吉田 寿志, 黒田 知宏, 森田 智視

    日本臨床試験学会第10回学術集会総会  2019年1月25日 

     詳細を見る

    開催年月日: 2019年1月

    記述言語:日本語   会議種別:ポスター発表  

    開催地:TFTホール(東京都江東区)  

  30. 京都大学アカデミックデータ・イノベーションユニット - ボトムアップによる多様な学術データマネジメント 環境整備への提言 国際会議

    青木 学聡, 梶田 将司

    International Workshop on Data Science  2018年11月15日 

     詳細を見る

    開催年月日: 2018年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:三島市民文化会館(静岡県三島市)  

  31. Engaging Academia with Japan-wide Data Platforms and RDM CHarter 国際会議

    MIho FUNAMORI, Takaaki AOKI, Katsuhiko TOYAMA

    FORCE2018 meeting  2018年10月12日 

     詳細を見る

    開催年月日: 2018年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:New Residence Hall Conference Center (Montréal, QC, Canada)  

  32. 画像分析技術のイメージングSIMS分析への応用

    青木 学聡, 瀬木 利夫, 松尾 二郎

    2018年第79回応用物理学会秋季学術講演会  2018年9月21日  応用物理学会

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    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋国際会議場(名古屋市熱田区)  

  33. 液体材料の大気圧MeV-SIMS測定

    瀬木 利夫, 石井 健太, 青木 学聡, 松尾 二郎

    2018年第79回応用物理学会秋季学術講演会  2018年9月21日  応用物理学会

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    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋国際会議場(名古屋市熱田区)  

  34. ミスト法を用いたセシウム付加によるPEG表面の次イオン検出感度の向上

    松田 大輝, 松尾 二郎, 瀬木 利夫, 青木 学聡

    2018年第79回応用物理学会秋季学術講演会  2018年9月21日  応用物理学会

     詳細を見る

    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋国際会議場(名古屋市熱田区)  

  35. 大学での研究データ管理 招待有り

    青木 学聡

    第4回RA協議会年次大会、「私たちがオープンサイエンスを進めるためにすべきこと」  2018年9月20日  RA協議会年次大会実行委員会

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    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:神戸国際会議場(神戸市中央区)  

  36. 大学での研究データマネジメントの進め方 招待有り

    青木 学聡

    Cloud week 2018@Hokkaido University  2018年9月3日  北海道大学基盤情報センター

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    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:北海道大学学術交流会館小講堂(札幌市北区)  

  37. 全学的な研究データ保存システムの構築と運用 招待有り

    青木 学聡

    平成30年度国立大学法人等情報化発表会  2018年8月31日  国立大学法人等情報化連絡協議会

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    開催年月日: 2018年8月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北大学川内キャンパス(仙台市青葉区)  

  38. 研究データ長期保存サービスの試行と推進方策 招待有り

    青木 学聡

    研究・実験データの保管・共有の推進方策  2018年8月21日  地域科学研究会・高等教育情報センター

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    開催年月日: 2018年8月

    記述言語:日本語   会議種別:公開講演,セミナー,チュートリアル,講習,講義等  

    開催地:剛堂会館(東京都千代田区)  

  39. 京都大学でのORCID導入 招待有り

    青木 学聡

    ORCID Japan Member Meeting  2018年4月17日 

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    開催年月日: 2018年4月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:国立情報学研究所, 東京都千代田区  

  40. 固液界面分析に向けたAmbient SIMS法の開発

    石井 健太, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第65回応用物理学会春季学術講演会  2018年3月20日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学西早稲田キャンパス, 東京都  

  41. 反応性ガスクラスターインジェクションを用いた斜め2方向エッチングによる3D構造の作成

    瀬木 利夫, 山本 洋揮, 古澤 孝弘, 荘所 正, 小池 国彦, 青木 学聡, 松尾 二郎

    第65回応用物理学会春季学術講演会  2018年3月20日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学西早稲田キャンパス, 東京都  

  42. 二次電子増倍管(CEM)を用いたビーム径測定システムの開発

    山田 周平, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第65回応用物理学会春季学術講演会  2018年3月20日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学西早稲田キャンパス, 東京都  

  43. ミスト法を用いたナトリウム付加によるPEG表面の2次イオン検出感度の向上

    松田 大輝, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第65回応用物理学会春季学術講演会  2018年3月20日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学西早稲田キャンパス, 東京都  

  44. イオンビーム研究におけるデータマネジメント方針の予備的検討

    青木 学聡

    第65回応用物理学会春季学術講演会  2018年3月18日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:ポスター発表  

    開催地:早稲田大学西早稲田キャンパス, 東京都  

  45. 京都大学のオープンサイエンス動向

    青木 学聡

    第5回オープンサイエンスデータ推進ワークショップ  2018年3月1日 

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    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:京都大学理学研究科セミナーハウス  

  46. 研究データ管理を大学でどのように進めるか? 招待有り

    青木 学聡

    図書館総合展フォーラム「あなたもなれるデータライブラリアン」  2017年11月17日 

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    開催年月日: 2017年11月

    記述言語:日本語   会議種別:シンポジウム・ワークショップ パネル(指名)  

    開催地:パシフィコ横浜, 横浜市  

  47. Long-term archive system for university-wide research data preservation 国際会議

    青木 学聡, 梶田 将司, 赤坂 浩一, 武田 鋼

    WDS Asia-Oceania Conference, 2017  2017年9月26日 

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    開催年月日: 2017年9月

    記述言語:英語   会議種別:ポスター発表  

    開催地:京都大学, 京都市  

  48. 大学での研究データマネジメントを考える 招待有り

    青木 学聡

    大学図書館問題研究会第48階全国大会  2017年9月11日 

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    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(招待・特別)  

    開催地:同志社大学, 京都市  

  49. パイプ型ノズルを用いた湿潤環境下SIMS測定

    石井 健太, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第78回応用物理学会秋季学術講演会  2017年9月6日 

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    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:福岡国際会議場, 福岡県  

  50. ClF3中性クラスターエッチング表面の凹凸構造

    瀬木 利夫, 荘所 正, 小池 国彦, 青木 学聡, 松尾 二郎

    第78回応用物理学会秋季学術講演会  2017年9月6日 

     詳細を見る

    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:福岡国際会議場, 福岡県  

  51. PEG表面へのナトリウム付加による2次イオン検出感度向上

    松田 大輝, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第78回応用物理学会秋季学術講演会  2017年9月6日 

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    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:福岡国際会議場, 福岡県  

  52. 研究データマネジメントと日本の大学 招待有り

    青木 学聡

    第2回 SPARC Japan セミナー2016 (オープンアクセス・サミット2016)「研究データオープン化推進に向けて : インセンティブとデータマネジメント」  2016年10月26日 

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    開催年月日: 2016年10月

    記述言語:日本語   会議種別:口頭発表(招待・特別)  

  53. 研究データ管理と日本の大学 招待有り

    青木 学聡

    京都オープンサイエンス勉強会 第5回勉強会  2016年10月19日 

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    開催年月日: 2016年10月

    記述言語:日本語  

  54. Chemical analysis under ambient conditions using swift heavy ion beams 国際会議

    J.Matsuo, M.Kusakari, M.Fujii, T.Seki, T.Aoki

    12th European Conference on Acceleratorsin Applied Research and Technology  2016年7月7日 

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    開催年月日: 2016年7月

    記述言語:英語   会議種別:口頭発表(一般)  

  55. 大気圧分析を目指した高速重イオンプローブによる二次イオン質量分析法の開発

    草刈 将一, 藤井 麻樹子, 瀬木 利夫, 青木 学聡, 松尾 二郎

    第62回応用物理学会春季学術講演会  2015年3月14日 

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    開催年月日: 2015年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:東海大学湘南キャンパス, 神奈川県  

  56. ガスクラスターイオンビームを用いた有機材料の三次元質量イメー