2021/06/08 更新

写真a

カネチカ マサカズ
兼近 将一
KANECHIKA Masakazu
所属
名古屋大学 未来材料・システム研究所 豊田中研GaNパワーデバイス産学協同研究部門 特任教授
職名
特任教授

学位 1

  1. 博士(工学) ( 2003年2月   広島大学 ) 

 

論文 10

  1. Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    APPLIED PHYSICS LETTERS   115 巻 ( 14 )   2019年9月

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    出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/1.5114844

    Web of Science

    Scopus

  2. Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab07ad

    Web of Science

    Scopus

  3. Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    IEEE ELECTRON DEVICE LETTERS   40 巻 ( 6 ) 頁: 941 - 944   2019年6月

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    出版者・発行元:IEEE Electron Device Letters  

    DOI: 10.1109/LED.2019.2912395

    Web of Science

    Scopus

  4. Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

    Maeda T.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2019-May 巻   頁: 59 - 62   2019年5月

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    出版者・発行元:Proceedings of the International Symposium on Power Semiconductor Devices and ICs  

    DOI: 10.1109/ISPSD.2019.8757676

    Scopus

  5. Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)     頁: 59 - 62   2019年

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  6. Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

    Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    APPLIED PHYSICS LETTERS   112 巻 ( 25 )   2018年6月

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    出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/1.5031215

    Web of Science

    Scopus

  7. Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

    Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   11 巻 ( 4 )   2018年4月

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    出版者・発行元:Applied Physics Express  

    DOI: 10.7567/APEX.11.041001

    Web of Science

    Scopus

  8. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

    Maeda T., Narita T., Ueda H., Kanechika M., Uesugi T., Kachi T., Kimoto T., Horita M., Suda J.

    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2018年

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  9. Ion implantation technique for conductivity control of GaN

    Narita T.

    17th International Workshop on Junction Technology, IWJT 2017     頁: 87 - 90   2017年6月

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    出版者・発行元:17th International Workshop on Junction Technology, IWJT 2017  

    DOI: 10.23919/IWJT.2017.7966524

    Scopus

  10. Ion implantation technique for conductivity control of GaN

    Narita Tetsuo, Kataoka Keita, Kanechika Masakazu, Kachi Tetsu, Uesugi Tsutomu

    2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)     頁: 87 - 90   2017年

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