2021/11/30 更新

写真a

チョウ シイ
張 梓懿
ZAHNG Ziyi
所属
未来材料・システム研究所 旭化成次世代デバイス産学協同研究部門 特任助教
職名
特任助教

学位 1

  1. 修士(工学) ( 2015年3月   東京大学 ) 

受賞 1

  1. 第42回応用物理学会優秀論文賞

    2020年9月   日本応用物理学会  

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    受賞区分:学会誌・学術雑誌による顕彰  受賞国:日本国

 

論文 4

  1. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes 査読有り

    Ziyi Zhang, Maki Kushimoto, Masahiro Horita, Naoharu Sugiyama, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

    Applied Physics Letters   117 巻   頁: 152104   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: /10.1063/5.0027789

  2. Design and characterization of a low-optical-loss UV-C laser diode 査読有り

    Zhang Z., Kushimoto M., Sakai T., Sugiyama N., Schowalter L.J., Sasaoka C., Amano H.

    Japanese Journal of Applied Physics   59 巻 ( 9 ) 頁: 094001   2020年9月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers). The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 μm thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm-1, where the contribution from the absorptive p-contact layers was less than 3 cm-1.

    DOI: 10.35848/1347-4065/abaac6

    Scopus

  3. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR 査読有り

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   116 巻 ( 12 ) 頁: 122101   2020年3月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5145017

    Web of Science

  4. A 271.8 nm deep-ultraviolet laser diode for room temperature operation 査読有り

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 12 ) 頁: 124003   2019年12月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.

    DOI: 10.7567/1882-0786/ab50e0

    Web of Science

    Scopus