Updated on 2022/04/12

写真a

 
UESUGI Tsutomu
 
Organization
Institute of Materials and Systems for Sustainability Designated professor
Title
Designated professor

Degree 1

  1. The degree of Doctor of Philosophy ( 2011.3   Hokkaido University ) 

 

Papers 15

  1. Mg-implanted bevel edge termination structure for GaN power device applications

    Matys Maciej, Ishida Takashi, Nam Kyung Pil, Sakurai Hideki, Narita Tetsuo, Uesugi Tsutomu, Bockowski Michal, Suda Jun, Kachi Tetsu

    APPLIED PHYSICS LETTERS   Vol. 118 ( 9 )   2021.3

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    Publisher:Applied Physics Letters  

    DOI: 10.1063/5.0039183

    Web of Science

    Scopus

  2. Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment

    Ishida Takashi, Nam Kyung Pil, Matys Maciej, Uesugi Tsutomu, Suda Jun, Kachi Tetsu

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 12 )   2020.12

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  3. Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment

    Ishida T.

    Applied Physics Express   Vol. 13 ( 12 )   2020.12

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    Publisher:Applied Physics Express  

    DOI: 10.35848/1882-0786/abcdbb

    Scopus

  4. Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    APPLIED PHYSICS LETTERS   Vol. 115 ( 14 )   2019.9

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    Publisher:Applied Physics Letters  

    DOI: 10.1063/1.5114844

    Web of Science

    Scopus

  5. Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

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    Publisher:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab07ad

    Web of Science

    Scopus

  6. Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    IEEE ELECTRON DEVICE LETTERS   Vol. 40 ( 6 ) page: 941 - 944   2019.6

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    Publisher:IEEE Electron Device Letters  

    DOI: 10.1109/LED.2019.2912395

    Web of Science

    Scopus

  7. Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

    Maeda T.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   Vol. 2019-May   page: 59 - 62   2019.5

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    Publisher:Proceedings of the International Symposium on Power Semiconductor Devices and ICs  

    DOI: 10.1109/ISPSD.2019.8757676

    Scopus

  8. Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)     page: 59 - 62   2019

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  9. Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

    Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    APPLIED PHYSICS LETTERS   Vol. 112 ( 25 )   2018.6

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    Publisher:Applied Physics Letters  

    DOI: 10.1063/1.5031215

    Web of Science

    Scopus

  10. Cathodoluminescence Study on Thermal Recovery Process of Mg-Ion Implanted N-Polar GaN

    Kataoka Keita, Narita Tetsuo, Iguchi Hiroko, Uesugi Tsutomu, Kachi Tetsu

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 5 )   2018.5

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    Publisher:Physica Status Solidi (B) Basic Research  

    DOI: 10.1002/pssb.201700379

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    Scopus

  11. Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

    Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 4 )   2018.4

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    Publisher:Applied Physics Express  

    DOI: 10.7567/APEX.11.041001

    Web of Science

    Scopus

  12. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

    Maeda T., Narita T., Ueda H., Kanechika M., Uesugi T., Kachi T., Kimoto T., Horita M., Suda J.

    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2018

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  13. Ion implantation technique for conductivity control of GaN

    Narita T.

    17th International Workshop on Junction Technology, IWJT 2017     page: 87 - 90   2017.6

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    Publisher:17th International Workshop on Junction Technology, IWJT 2017  

    DOI: 10.23919/IWJT.2017.7966524

    Scopus

  14. P-type doping of GaN(000(1)over-bar) by magnesium ion implantation

    Narita Tetsuo, Kachi Tetsu, Kataoka Keita, Uesugi Tsutomu

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 1 )   2017.1

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    Publisher:Applied Physics Express  

    DOI: 10.7567/APEX.10.016501

    Web of Science

    Scopus

  15. Ion implantation technique for conductivity control of GaN

    Narita Tetsuo, Kataoka Keita, Kanechika Masakazu, Kachi Tetsu, Uesugi Tsutomu

    2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)     page: 87 - 90   2017

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