Updated on 2021/11/02

写真a

 
ANDO Yuji
 
Organization
Graduate School of Engineering Electronics 2 Designated professor
Title
Designated professor

Degree 1

  1. Doctor (Science) （ 2012.3   The University of Tokyo ） 

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Research Areas 1

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

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Research History 5

  1. Kyoto Institute of Technology   Green Innovation Center   Researcher

    2018.4 - 2018.8

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    Country：Japan

  2. The University of Shiga Prefecture   School of Engineering   Researcher

    2016.6 - 2018.3

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    Country：Japan

  3. Renesas System Design Co. Ltd   Compound Semiconductor Devices Section   Engineer

    2014.7 - 2016.5

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    Country：Japan

  4. Renesas Electronics Corporation   Compound Semiconductor Devices Division   Manager

    2010.4 - 2014.6

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    Country：Japan

  5. NEC Corporation

    1985.4 - 2010.3

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    Country：Japan

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Education 1

  1. The University of Tokyo   Faculty of Engineering   Department of Applied Physics

    1981.4 - 1985.3

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    Country： Japan

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Professional Memberships 2

  1. IEEE

  2. The Japan Society of Applied Physics

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Committee Memberships 1

  1. 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会   企画委員  

    2010.10 - 2013.1   

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    Committee type：Academic society

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Papers 8

  1. Electrical characteristics of gated-anode diodes based on normally-off GaN HEMT structures for rectenna applications Reviewed

    Takahashi Hidemasa, Ando Yuji, Tsuchiya Yoichi, Wakejima Akio, Hayashi Hiroaki, Yagyu Eiji, Kikkawa Koichi, Sakai Naoki, Itoh Kenji, Suda Jun

    ELECTRONICS LETTERS   Vol. 57 ( 21 ) page： 810 - 812   2021.10

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    Language：Japanese  

    DOI： 10.1049/ell2.12269

    Web of Science

  2. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors Reviewed

    Ma Qiang, Urano Shiyo, Ando Yuji, Tanaka Atsushi, Wakejima Akio

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 9 )   2021.9

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    Language：Japanese   Publisher：Applied Physics Express  

    This letter reports an impact of SiN film stress on electroluminescence (EL) of AlGaN/GaN HEMTs. The EL color of HEMTs turned from high-intensity white to low-intensity red, as the SiN film stress was increased from -24.2 (compressive) to +11.5 MPa (tensile). The weak reddish EL from the HEMT with a film stress of +11.5 MPa turned bright whitish when a drain-to-source voltage (V ds) was increased. A transient I d response after biasing stress revealed that severe current collapse emerged in the HEMT with a film stress of -24.2 MPa. In addition, the current collapse in HEMTs increased with the increased V ds.

    DOI： 10.35848/1882-0786/ac1f40

    Web of Science

    Scopus

  3. Fabrication of 150-nm AlGaN/GaN field-plated High Electron Mobility Transistors using i-line stepper Reviewed

    Ando Yuji, Makisako Ryutaro, Takahashi Hidemasa, Wakejima Akio, Suda Jun

    ELECTRONICS LETTERS     2021.8

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    Authorship：Lead author,　Corresponding author   Language：Japanese  

    DOI： 10.1049/ell2.12303

    Web of Science

  4. Dynamic characteristics after bias stress of GaN HEMTs with field plate on free-standing GaN substrate Reviewed

    Ma Qiang, Ando Yuji, Wakejima Akio

    ELECTRONICS LETTERS   Vol. 57 ( 15 ) page： 591 - 593   2021.7

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    Language：Japanese  

    DOI： 10.1049/ell2.12201

    Web of Science

  5. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer Reviewed

    Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

    APPLIED PHYSICS LETTERS   Vol. 118 ( 7 )   2021.2

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    Language：Japanese   Publisher：Applied Physics Letters  

    The leakage current caused by the Si pileup at the regrowth interface of AlGaN/GaN high electron mobility transistors (HEMTs) is significantly suppressed by the semi-insulating Mg-doped GaN layer. Mg is unintentionally doped and can be originated from the graphite susceptor of metal organic vapor phase epitaxy. Before regrowth of the AlGaN/GaN heterostructure, the GaN template is treated with hydrochloric acid (HCl) and hydrogen peroxide/potassium hydroxide (H2O2/KOH) solution to promote the adsorption of Mg on the GaN surface. The Mg-doped GaN channel layer is highly resistive due to the passivation of hydrogen. The p-n junction formed by the weakly p-type Mg-doped GaN layer and the n-type Si pileup layer depletes the excess electrons at the regrowth interface. As a result, the off-state drain leakage current of the HEMT device can be decreased by two orders of magnitude at 40 V.

    DOI： 10.1063/5.0034584

    Web of Science

    Scopus

  6. Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs Reviewed

    Ando Yuji, Takahashi Hidemasa, Ma Qiang, Wakejima Akio, Suda Jun

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 67 ( 12 ) page： 5421 - 5426   2020.12

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    Authorship：Lead author,　Corresponding author   Language：Japanese   Publisher：IEEE Transactions on Electron Devices  

    This article reports a systematic study focused on the mechanical stress effect of field-plate dielectric film on the electric characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMTs were fabricated on SiC substrates, where the stress of a SiN field-plate dielectric film ranged from -252 (compressive) to +26.5 (tensile) MPa. Si-rich and compressive SiN films exhibited a significant increase in the isolation leakage. On the other hand, relatively N-rich and tensile SiN films showed a significant increase in the gate leakage current of HEMTs. In addition, pulsed ${I}$ - ${V}$ measurements showed the suppression in the current collapse by increasing the tensile stress. Consequently, small current collapse and small gate leakage current were obtained simultaneously with good isolation, as the film stress was optimized.

    DOI： 10.1109/TED.2020.3029540

    Web of Science

    Scopus

  7. Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate Reviewed

    Ma Qiang, Yoshida Tomoyo, Ando Yuji, Wakejima Akio

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 10 )   2020.10

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    Language：Japanese  

    Web of Science

  8. Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells. Reviewed

    Ando Y, Oku T, Yasuda M, Ushijima K, Matsuo H, Murozono M

    Heliyon   Vol. 6 ( 1 ) page： e03094   2020.1

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    Authorship：Lead author   Language：English  

    DOI： 10.1016/j.heliyon.2019.e03094

    PubMed

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