研究者詳細 - 須田　淳

論文 - 須田　淳

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TIME-RESOLVED NONLINEAR LUMINESCENCE OF BIEXCITONS IN ZNSE-ZNXMG1-XSYSE1-Y SINGLE QUANTUM-WELLS

YAMADA Y, MISHINA T, MASUMOTO Y, KAWAKAMI Y, SUDA J, FUJITA S, FUJITA S

PHYSICAL REVIEW B 52 巻 ( 4 ) 頁： R2289 - R2292 1995年7月

GROWTH OF ZNSE/ZNMGSSE QUANTUM-WELL STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY UNDER IN-SITU OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION

SUDA J, KAWAKAMI Y, FUJITA S, FUJITA S

JOURNAL OF CRYSTAL GROWTH 150 巻 ( 1-4 ) 頁： 738 - 742 1995年5月

Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation

Suda J., Kawakami Y., Fujita S., Fujita S.

Journal of Crystal Growth 150 巻頁： 738 - 742 1995年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Crystal Growth

ZnSe/ZnMgSSe quantum well (QW) structures with an abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) under in situ observation of reflection high energy electron diffraction (RHEED). Source materials used were elemental zinc (Zn), selenium (Se), the RHEED specular spot were observed over 10 cycles during the growth of ZnSe well and ZnMgSSe barrier layers. A series of single quantum wells (SQWs) with various well widths were grown and characterized by photoluminescence (PL) measurements at 4.2 K. SQWs with 24 and 33 Å well widths exhibited sharp intense emissions which originated from n=1 heavy-hole free excitons. © 1995, All rights reserved.

DOI： 10.1016/0022-0248(95)80038-E

Scopus

Time-resolved nonlinear luminescence of biexcitons in ZnSe-ZnxMg1-xSySe1-y single quantum wells

Yamada Y., Mishina T., Masumoto Y., Kawakami Y., Suda J., Fujita S., Fujita S.

Physical Review B 52 巻 ( 4 ) 1995年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Physical Review B

Nonlinear optical properties of dense excitonic systems in ZnSe-ZnxMg1-xSySe1-y single quantum wells have been studied by means of time-resolved nonlinear luminescence spectroscopy, based on an excitation correlation technique. The enhancement in luminescence efficiency of biexcitons was clearly observed in a time-correlation trace of nonlinear biexciton luminescence. The origin of the enhancement was attributed to the stimulation of biexciton luminescence. © 1995 The American Physical Society.

DOI： 10.1103/PhysRevB.52.R2289

Scopus

OPTICAL-PROPERTIES OF ZNSE/ZNMGSSE SINGLE QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

SUDA J, KAWAKAMI Y, FUJITA S, FUJITA S

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 33 巻 ( 7B ) 頁： L986 - L989 1994年7月

Optical properties of ZnSe/ZnMgSSe single quantum wells grown by metalorganic molecular beam epitaxy

Suda J., Kawakami Y., Fujita S., Fujita S.

Japanese Journal of Applied Physics 33 巻 ( 7 ) 頁： L986 - L989 1994年7月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In this letter we report optical properties of ZnSe/ZnMgSSe single quantum wells (SQWs) grown by metalorganic molecular beam epitaxy (MOMBE). At 4.2 K, a 10.5 monolayer (30 Å) ZnSe SQW confined in Zn0.90Mg0.10-S0.18Se0.82 layers exhibited intense purplish blue photoluminescence (PL) peaking at 2.865 eV, whose linewidth was as small as 5 meV. This emission was assigned to the n=1 heavy-hole exciton (.Ex1hh)- Another peak appeared on the low-energy side of Ex1hh under high excitation and grew nonlinearly with increasing excitation intensity. We tentatively attribute this line to the recombination of biexcitons. The exciton-longitudinal-optical(LO)-phonon coupling constant was also assessed from the temperature dependence of PL measurements. © 1994 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.33.L986

Scopus

GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF (ZN,MG)(S,SE) USING BIS-METHYLCYCLOPENTADIENYL-MAGNESIUM AND HYDROGEN-SULFIDE

SUDA J, KAWAKAMI Y, FUJITA S, FUJITA S

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 33 巻 ( 3A ) 頁： L290 - L293 1994年3月

Gas-source molecular beam epitaxial growth of (zn, mg)(s, se) using bis-methylcyclopentadienyl-magnesium and hydrogen sulfide

Suda J., Kawakami Y., Fujita S., Fujita S.

Japanese Journal of Applied Physics 33 巻 ( 3 ) 頁： L290 - L293 1994年3月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In this letter we report the first successful gas-source molecular beam epitaxy (GSMBE) of ZnMgSSe on (100) GaAs substrates. Source materials used were elemental zinc (Zn), elemental selenium (Se), hydrogen sulfide (H2S) and bis-methylcyclopentadienyl-magnesium ((MeCp)2Mg). It is revealed that the growth by this technique results in good controllability of solid compositions of this quaternary alloy system. Photoluminescence and X-ray diffraction measurements show that the layer coherently grown on GaAs exhibits high quality comparable to that grown by conventional molecular beam epitaxy (MBE). © 1994 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.33.L290

Scopus

GAS-SOURCE MBE OF ZNMGSSE LAYERS

FUJITA S, SUDA J, KAWAKAMI Y, FUJITA S

II-VI BLUE/GREEN LASER DIODES 2346 巻頁： 40 - 47 1994年

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