Updated on 2022/04/14

写真a

 
PU Jiang
 
Organization
Graduate School of Engineering Applied Physics 1 Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Physical Science and Engineering
Title
Assistant Professor
Contact information
メールアドレス

Degree 1

  1. 博士(工学) ( 2017.3   早稲田大学 ) 

Research Interests 4

  1. Electrolyte

  2. Atomically thin materials

  3. Optoelectronics

  4. Electronics

Research Areas 1

  1. Nanotechnology/Materials / Applied condensed matter physics

Education 2

  1. Waseda University   Advanced Science and Engineering   Advanced Science and Engineering

    2012.4 - 2017.3

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    Country: Japan

  2. Waseda University   Advanced Science and Engineering   Applied Physics

    2008.4 - 2012.3

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    Country: Japan

Professional Memberships 3

  1. The Japan Society of Applied Physics

  2. Japan Physics Society

  3. The Fullerenes, Nanotubes and Graphene Research Society

Awards 9

  1. MNC 2020 Award for Most Impressive Presentation

    2020.11   33rd International Microprocesses and Nanotechnology Conference (MNC 2020)   Dimensionality of Thermoelectric Properties in Low Dimensional Semiconducting Materials

    Yota Ichinose, Manao Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, Kazuhiro Yanagi

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  2. SSDM Young Researcher Award

    2019.9   2019 International Conference on Solid State Devices and Materials (SSDM2019)   Direct Electroluminescence Imaging of Transition Metal Dichalcogenides

    Jiang Pu

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  3. 第14回飯島奨励賞

    2017.9   フラーレン・ナノチューブ・グラフェン学会  

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  4. Poster Paper Award

    2016.3   International Thin-Film Transistor Conference (ITC2016)   Highly Flexible and Extremely High-gain Complementary Inverters of Transition Metal Dichalcogenide Monolayers

    Jiang Pu

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    Award type:Award from international society, conference, symposium, etc.  Country:Taiwan, Province of China

  5. 若手奨励賞

    2015.9   フラーレン・ナノチューブ・グラフェン学会  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  6. Journal of Materials Chemistry A賞

    2015.9   フラーレン・ナノチューブ・グラフェン学会  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  7. Poster Presentation Award

    2015.6   The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)   Electric Double Layer Light-emitting Diodes of Monolayer WSe2

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  8. 講演奨励賞

    2014.9   応用物理学会   遷移金属ダイカルコゲナイドを用いた電気二重層トランジスタ

    蒲江

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  9. 修士論文賞(宮部賞)

    2014.3   早稲田大学 物理学及応用物理学専攻   二次元材料を用いた電気二重層トランジスタ

    蒲江

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    Country:Japan

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Papers 39

  1. Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics

    Lim Hong En, Liu Zheng, Kim Juan, Pu Jiang, Shimizu Hiroshi, Endo Takahiko, Nakanishi Yusuke, Takenobu Taishi, Miyata Yasumitsu

    ACS APPLIED NANO MATERIALS     2021.12

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    Language:Japanese  

    DOI: 10.1021/acsanm.1c03160

    Web of Science

  2. Recent Advances in Light-Emitting Electrochemical Cells with Low-Dimensional Quantum Materials Invited Reviewed

    Jiang Pu, Taishi Takenobu

    Journal of the Imaging Society of Japan   Vol. 60 ( 6 ) page: 656 - 672   2021.12

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.11370/isj.60.656

  3. Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors

    Pu Jiang, Zhang Wenjin, Matsuoka Hirofumi, Kobayashi Yu, Takaguchi Yuhei, Miyata Yasumitsu, Matsuda Kazunari, Miyauchi Yuhei, Takenobu Taishi

    ADVANCED MATERIALS   Vol. 33 ( 36 )   2021.9

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    Language:Japanese  

    DOI: 10.1002/adma.202100601

    Web of Science

  4. Spatial Control of Dynamic p-i-n Junctions in Transition Metal Dichalcogenide LightEmitting Devices

    Ou Hao, Matsuoka Hirofumi, Tempia Juliette, Yamada Tomoyuki, Takahashi Togo, Oi Koshi, Takaguchi Yuhei, Endo Takahiko, Miyata Yasumitsu, Chen Chang-Hsiao, Li Lain-Jong, Pu Jiang, Takenobu Taishi

    ACS NANO   Vol. 15 ( 8 ) page: 12911 - 12921   2021.8

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    Language:Japanese  

    DOI: 10.1021/acsnano.1c01242

    Web of Science

  5. Electric Double Layer Doping of Charge-Ordered Insulators alpha-(BEDT-TTF)(2)I-3 and alpha-(BETS)(2)I-3

    Kawasugi Yoshitaka, Masuda Hikaru, Pu Jiang, Takenobu Taishi, Yamamoto Hiroshi M., Kato Reizo, Tajima Naoya

    CRYSTALS   Vol. 11 ( 7 )   2021.7

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    Language:Japanese  

    DOI: 10.3390/cryst11070791

    Web of Science

  6. Air-stable and efficient electron doping of monolayer MoS2 by salt-crown ether treatment

    Ogura Hiroto, Kaneda Masahiko, Nakanishi Yusuke, Nonoguchi Yoshiyuki, Pu Jiang, Ohfuchi Mari, Irisawa Toshifumi, Lim Hong En, Endo Takahiko, Yanagi Kazuhiro, Takenobu Taishi, Miyata Yasumitsu

    NANOSCALE   Vol. 13 ( 19 ) page: 8784 - 8789   2021.5

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    Language:Japanese  

    DOI: 10.1039/d1nr01279g

    Web of Science

  7. Three-dimensional networks of superconducting NbSe2 flakes with nearly isotropic large upper critical field

    Takahashi Togo, Ando Chisato, Saito Mitsufumi, Miyata Yasumitsu, Nakanishi Yusuke, Pu Jiang, Takenobu Taishi

    NPJ 2D MATERIALS AND APPLICATIONS   Vol. 5 ( 1 )   2021.3

  8. One-dimensionality of thermoelectric properties of semiconducting nanomaterials Reviewed

    Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, Kazuhiro Yanagi

    PHYSICAL REVIEW MATERIALS   Vol. 5 ( 2 ) page: 025404-1 - 025404-7   2021.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.5.025404

    Web of Science

  9. Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

    Lim Hong En, Nakanishi Yusuke, Liu Zheng, Pu Jiang, Maruyama Mina, Endo Takahiko, Ando Chisato, Shimizu Hiroshi, Yanagi Kazuhiro, Okada Susumu, Takenobu Taishi, Miyata Yasumitsu

    NANO LETTERS   Vol. 21 ( 1 ) page: 243 - 249   2021.1

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  10. Recent Progress on Light-Emitting Electrochemical Cells with Nonpolymeric Materials

    Matsuki Keiichiro, Pu Jiang, Takenobu Taishi

    ADVANCED FUNCTIONAL MATERIALS   Vol. 30 ( 33 )   2020.8

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    Language:Japanese  

    DOI: 10.1002/adfm.201908641

    Web of Science

  11. A versatile structure of light-emitting electrochemical cells for printed electronics

    Tanaka Yuki, Pu Jiang, Takenobu Taishi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 )   2020.8

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    Language:Japanese  

    DOI: 10.35848/1882-0786/aba56c

    Web of Science

  12. CVD growth of large-area InS atomic layers and device applications

    Tu Chien-Liang, Lin Kuang- I, Pu Jiang, Chung Tsai-Fu, Hsiao Chien-Nan, Huang An-Ci, Yang Jer-Ren, Takenobu Taishi, Chen Chang-Hsiao

    NANOSCALE   Vol. 12 ( 17 ) page: 9366 - 9374   2020.5

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    Language:Japanese  

    DOI: 10.1039/d0nr01104e

    Web of Science

  13. 2D Materials for Large-Area Flexible Thermoelectric Devices

    Kanahashi Kaito, Pu Jiang, Takenobu Taishi

    ADVANCED ENERGY MATERIALS   Vol. 10 ( 11 )   2020.3

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    Language:Japanese  

    DOI: 10.1002/aenm.201902842

    Web of Science

  14. Electrolyte-Gating-Induced Metal-Like Conduction in Nonstoichiometric Organic Crystalline Semiconductors under Simultaneous Bandwidth Control

    Ito Hiroshi, Edagawa Yusuke, Pu Jiang, Akutsu Hiroki, Suda Masayuki, Yamamoto Hiroshi M., Kawasugi Yoshitaka, Haruki Rie, Kumai Reiji, Takenobu Taishi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 13 ( 10 )   2019.10

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    Language:Japanese  

    DOI: 10.1002/pssr.201900162

    Web of Science

  15. Non-Fermi-liquid behavior and doping asymmetry in an organic Mott insulator interface

    Kawasugi Yoshitaka, Seki Kazuhiro, Pu Jiang, Takenobu Taishi, Yunoki Seiji, Yamamoto Hiroshi M., Kato Reizo

    PHYSICAL REVIEW B   Vol. 100 ( 11 )   2019.9

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  16. Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors

    Pu Jiang, Matsuki Keichiro, Chu Leiqiang, Kobayashi Yu, Sasaki Shogo, Miyata Yasumitsu, Eda Goki, Takenobu Taishi

    ACS NANO   Vol. 13 ( 8 ) page: 9218 - 9226   2019.8

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    Language:Japanese  

    DOI: 10.1021/acsnano.9b03563

    Web of Science

  17. Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device

    Kawasugi Yoshitaka, Seki Kazuhiro, Tajima Satoshi, Pu Jiang, Takenobu Taishi, Yunoki Seiji, Yamamoto Hiroshi M., Kato Reizo

    SCIENCE ADVANCES   Vol. 5 ( 5 )   2019.5

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    Language:Japanese  

    DOI: 10.1126/sciadv.aav7282

    Web of Science

  18. Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

    Chang Han-Ching, Tu Chien-Liang, Lin Kuang-I, Pu Jiang, Takenobu Taishi, Hsiao Chien-Nan, Chen Chang-Hsiao

    SMALL   Vol. 14 ( 39 )   2018.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/smll.201802351

    Web of Science

  19. Monolayer Transition Metal Dichalcogenides as Light Sources

    Pu Jiang, Takenobu Taishi

    ADVANCED MATERIALS   Vol. 30 ( 33 )   2018.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201707627

    Web of Science

  20. Self-Aligned and Scalable Growth of Monolayer WSe2-MoS2 Lateral Heterojunctions Reviewed

    Ming-Yang Li, Jiang Pu, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Taishi Takenobu, Lain-Jong Li

    Advanced Functional Materials   Vol. 1706860   page: 1-7   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adfm.201706860

  21. Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant Reviewed

    Matsuoka Hirofumi, Kanahashi Kaito, Tanaka Naoki, Shoji Yoshiaki, Li Lain-Jong, Pu Jiang, Ito Hiroshi, Ohta Hiromichi, Fukushima Takanori, Takenobu Taishi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 2 )   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.02CB15

    Web of Science

  22. A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers Reviewed

    Pu Jiang, Fujimoto Taiyo, Ohasi Yuki, Kimura Shota, Chen Chang-Hsiao, Li Lain-Jong, Sakanoue Tomo, Takenobu Taishi

    ADVANCED MATERIALS   Vol. 29 ( 24 )   2017.6

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201606918

    Web of Science

  23. Highly flexible and high-performance complementary inverters of large-area transition metal dichalcogenide monolayers Reviewed

    J. Pu, K. Funahashi, C.-H. Chen, M.-Y. Li, L.-J. Li, T. Takenobu

    Advanced Materials   Vol. 28   page: 4111-4119   2016

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201503872

  24. Simultaneous enhancement of conductivity and Seebeck coefficient in an organic Mott transistors Reviewed

    Y. Kawasugi, K. Seki, Y. Edagawa, Y. Sato, J. Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato

    Applied Physics Letters   Vol. 109   page: 233301   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4971310

  25. Photodetection on p-n junction formed by electrolyte-gated transistors of two-dimensional crystals Reviewed

    D. Kozawa, J. Pu, R. Shimizu, S. Kimura, C.-H. Chen, Y. Wada, K. Matsuki, T. Sakanoue, Y. Iwasa, L.-J. Li, T. Takenobu

    Applied Physics Letters   Vol. 109   page: 201107   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4967173

  26. Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers Reviewed

    J. Pu, K. Kanahashi, N. T. Cuong, C.-H. Chen, L.-J. Li, S. Okada, H. Ohta, T. Takenobu

    Physical Review B   Vol. 94   page: 014312   2016

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.94.014312

  27. Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator Reviewed

    Y. Kawasugi, K. Seki, Y. Edagawa, Y. Sato, J. Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato

    Nature Communications   Vol. 7   page: 12356   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms12356

  28. Thermoelectric detection of multi-subband density of states in semiconducting and metallic single-walled carbon nanotubes Reviewed

    S. Shimizu, T. Iizuka, K. Kanahashi, J. Pu, K. Yanagi, T. Takenobu, Y. Iwasa

    Small   Vol. 12   page: 3388-3392   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/smll.201600807

  29. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films Reviewed

    K. Matsuki, J. Pu, D. Kozawa, K. Matsuda, L.-J. Li, T. Takenobu

    Japanese Journal of Applied Physics   Vol. 55   page: 06GB02   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.06GB02

  30. Large-area WSe2 electric double layer transistors on a plastic substrate Reviewed

    K. Funahashi, J. Pu, M.-Y. Li, L.-J. Li, Y. Iwasa, T. Takenobu

    Japanese Journal of Applied Physics   Vol. 54   page: 06FF06   2015

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.54.06FF06

  31. Strategy for improved frequency response of electric double layer capacitors Reviewed

    Y. Wada, J. Pu, and T. Takenobu

    Applied Physics Letters   Vol. 107   page: 153505   2015

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4933255

  32. Flexible and stretchable thin-film transistors based on molybdenum disulphide Invited Reviewed

    J. Pu, L.-J. Li, T. Takenobu

    Physical Chemistry Chemical Physics   Vol. 16   page: 14996-15006   2014

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c3cp55270e

  33. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection Reviewed

    Y.-H. Chang, W. Zhang, Y. Zhu, Y. Han, J. Pu, J.-K. Chang, W.-T. Hsu, J.-K. Huang, C.-L. Hsu, M.-H. Chiu, T. Takenobu, H. Li, C.-I. Wu, W.-H. Chang, A. T. S. Wee, L.-J. Li

    ACS Nano   Vol. 8   page: 8582-8590   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nn503287m

  34. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors Reviewed

    L. Chu, H. Schmidt, J. Pu, S. Wang, B. Ozyilmaz, T. Takenobu, G. Eda

    Scientific Reports   Vol. 4   page: 7293   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep07293

  35. Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration Reviewed

    C.-H. Chen, C.-L. Wu, J. Pu, M. H. Chiu, P. Kumar, T. Takenobu, L. J. Li

    2D Materials   Vol. 1   page: 034001   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1583/1/3/034001

  36. Large-area synthesis of highly crystalline WSe2 monolayers and device applications Reviewed

    J.-K. Huang, J. Pu, C.-L. Hsu, M.-H. Chiu, Z.-Y. Juang, Y.-H. Chang, W.- H. Chang, Y. Iwasa, T. Takenobu

    ACS Nano   Vol. 8   page: 923-930   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nn405719x

  37. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Reviewed

    J. Pu, Y. Zhang, Y. Wada, J. T.-W. Wang, L.-J. Li, Y. Iwasa, T. Takenobu

    Applied Physics Letters   Vol. 103   page: 023505   2013

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4813311

  38. Ambipolar organic single-crystal transistors based on ion gels Reviewed

    Y. Yomogida, J. Pu, H. Shimotani, S. Ono, S. Hotta, Y. Iwasa

    Advanced Materials   Vol. 24   page: 4392-4397   2012

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201200655

  39. Highly flexible MoS2 thin-film transistors with ion gel dielectrics Reviewed

    J. Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu

    Nano Letters   Vol. 12   page: 4013-4017   2012

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nl301335q

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Books 5

  1. グラフェンから広がる二次元物質の新技術と応用

    蒲 江, 竹延 大志( Role: Joint author ,  イオンゲルによるトランジスタと発光・受光素子)

    エヌ・ティー・エス  2020.3  ( ISBN:978-4-86043-663-6

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    Total pages:558   Responsible for pages:203-210   Language:Japanese Book type:Scholarly book

  2. カーボンナノチューブ・グラフェンの応用研究最前線

    蒲江, 竹延大志( Role: Joint author ,  フレキシブルトランジスタ開発)

    エヌ・ティー・エス  2016.9  ( ISBN:978-4-86043-456-4

  3. カルコゲナイド系層状物質の最新研究

    蒲江, 竹延大志( Role: Joint author ,  カルコゲナイド系層状物質を用いた電気二重層トランジスタ)

    シーエムシー出版  2016.7  ( ISBN:978-4-7813-1166-1

  4. Organic Electronics Materials and Devices

    Jiang Pu, Taishi Takenobu( Role: Joint author ,  Functional Nanomaterials Devices)

    Springer  2015  ( ISBN:978-4-431-55654-1

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    Language:English Book type:Scholarly book

    Other Link: https://www.amazon.co.jp/Organic-Electronics-Materials-Devices-Shuichiro/dp/4431556532

  5. Molybdenum Disulfide Enables Flexible Transistors

    Jiang Pu, Taishi Takenobu, Lain-Jong Li(Molybdenum Disulfide Enables Flexible Transistors)

    American Chemical Society  2012 

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    Language:English

Presentations 91

  1. Effect of strain and electric field on a quantum spin liquid candidate !LaTeX$kappa$-(BEDT-TTF)_2_Cu_2_(CN)_3_ Ⅱ

    H. Sakurakoji, Y. Kawasugi, Jiang Pu, Taishi Takenobu, R. Kato, H. M. Yamamoto, N. Tajima

    2022.3.15 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  2. Intercalation of group-XIII metals in crystalline bundles of WTe atomic wires International conference

    Ryusuke Natsui, Hiroshi Shimizu, Zheng Liu, Iori Kikuchi, Jiang Pu, Taishi Takenobu, Hong En Lim, Takahiko Endo, Yusuke Nakanishi, Yasumitsu Miyata

    2022.3.3 

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    Event date: 2022.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  3. Monolayer in-plane heterojunction light-emitting devices with tunable composition distribution Invited International conference

    Jiang Pu

    9th International Workshop on 2D Materials  2022.2.18  A3 foresight program

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    Event date: 2022.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya   Country:Japan  

  4. Electric-Field-Induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers International conference

    Hao Ou, Jaing Pu, Taishi Takenobu

    9th International Workshop on 2D Materials  2022.2.17  A3 foresight program

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    Event date: 2022.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  5. ゲル状電解質を用いた機能性発光デバイス Invited

    蒲江

    レーザー学会第 560 回研究会 「有機コヒーレントフォトニクス」  2021.12.18  レーザー学会

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:奈良   Country:Japan  

  6. 高色純度青色発光低分子ν-DABNA を用いた電気化学発光セル

    田中 友規, 蒲 江, 畠山 琢次, 竹延 大志

    レーザー学会第 560 回研究会 「有機コヒーレントフォトニクス」   2021.12.17  レーザー学会

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:奈良   Country:Japan  

  7. Ultrapure-blue Light-emitting Electrochemical Cell Using ν-DABNA International conference

    Yuki Tanaka, Jiang Pu, Takuji Hatakeyama, Taishi Takenobu

    MNC2021  2021.10  MNC2021

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  8. Air-stable, efficient n-type doping of MoS2 by salt–crown ether treatment International conference

    Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi, Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

    MNC2021  2021.10  MNC2021

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  9. Air-stable n-type doping of monolayer MoS2 by crown-ether complexe International conference

    Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi, Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

    RPGR2021  2021.10.10  RPGR2021

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    Event date: 2021.10

    Language:English   Presentation type:Poster presentation  

    Venue:RPGR2021   Country:Korea, Republic of  

  10. Chiral electroluminescence in monolayer lateral heterojunctions International conference

    Jiang Pu1, Naoki Wada, Wenjin Zhang, Yuhei Takaguchi, Kazunari Matsuda, Yuhei, Miyauchi, Yasumitsu Miyata, Taishi Takenobu

    RPGR2021  2021.10.11  RPGR2021

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yonsei University   Country:Korea, Republic of  

  11. Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices International conference

    Hao Ou, Hirofumi Matsuoka, Juliette Tempia, Tomoyuki Yamada, Togo Takahashi, Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu1, Taishi Takenobu

    RPGR2021  2021.10.13  RPGR2021

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yonsei University   Country:Korea, Republic of  

  12. Large-area Superconducting NbSe2 Films with Nearly Isotropic Large Upper Critical Field International conference

    Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu, Taishi Takenobu

    RPGR2021  2021.10.13  RPGR2021

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yonsei University   Country:Korea, Republic of  

  13. Wafer-Scale Growth of 1D Transition Metal Telluride Atomic Wires International conference

    Hong En Lim1, Yusuke Nakanishi, Zheng Liu , Jiang Pu, Mina Maruyama, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Susumu Okada, Taishi Takenobu, Yasumitsu Miyata

    RPGR2021  2021.10.10  RPGR2021

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    Event date: 2021.10

    Language:English   Presentation type:Poster presentation  

    Venue:Yonsei University   Country:Korea, Republic of  

  14. Ultrapure-blue Light-emitting Electochemical Cell Using ν-DABNA International conference

    Yuki Tanaka, Jiang Pu, Takuji Hatakeyama, Taishi Takenobu

    ICFPE2021  2021.9 

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    Event date: 2021.9 - 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ICFPE2021   Country:Japan  

  15. 歪み印加したWS2/WSe2ファンデルワールスヘテロ構造の光学特性

    福井 遼太郎, 宇佐美 怜, 鈴木 壮磨, 高橋 統吾, 遠藤 尚彦, 宮田 耕充, 北浦 良, 蒲 江, 竹延 大志

    日本物理学会  2021.9  日本物理学会

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    Event date: 2021.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  16. 三次元構造を有する大面積NbSe2薄膜の超伝導特性

    高橋 統吾, 安藤 千里, 斎藤 光史, 宮田 耕充, 中西 勇介, 蒲 江, 竹延 大志

    日本物理学会  2021.9  日本物理学会

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    Event date: 2021.9

    Venue:オンライン   Country:Japan  

  17. Light-Emitting Electrochemical Cells for Functional Optoelectronic Device Applications Invited

    Jiang Pu

    2021.9.16 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  18. Microcavity light-emitting device using transition metal dichalcogenides

    2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  19. Gas-source chemical vapor deposition growth of 1T′-phase WS2 atomic layers

    2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  20. 高色純度青色発光低分子νーDABNA を用いた LEC

    田中友規、 蒲 江、 畠山 琢次、 竹延 大志

    応用物理学会  2021.9  応用物理学会

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  21. Anomalous Photovoltaic Effect in Monolayer WS2

    2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  22. Electrical Transport Properties of W6Te6 Nanowire Network Films International conference

    Iori Kikuchi, Hiroshi Shimizu, Lim Hong En, Takahiko Endo, Yusuke Nakanishi, Yasumitsu Miyata, Jiang Pu, Taishi Takenobu

    The 61st Fullerenes-Nanotubes-Graphene General Symposium  2021.9.1  The Fullerenes, Nanotubes, Graphene Research Society

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    Event date: 2021.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online   Country:Japan  

  23. Electrolyte-based transition metal dichalcogenide light-emitting devices with microcavity International conference

    Soma Suzuki, Tomohiro Ogura, Takahiko Endo, Yasumitsu Miyata, Kenichi Yamashita, Jiang Pu, Taishi Takenobu

    The 61st Fullerenes-Nanotubes-Graphene General Symposium  2021.9.3  The Fullerenes, Nanotubes, Graphene Research Society

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    Event date: 2021.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online   Country:Japan  

  24. Anomalous Photovoltaic Effect in Strained Monolayer WS2 International conference

    Togo Takahashi, Jiang Pu, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu

    The 61st Fullerenes-Nanotubes-Graphene General Symposium  2021.9.2  The Fullerenes, Nanotubes, Graphene Research Society

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    Event date: 2021.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online   Country:Japan  

  25. The strain effect of optical properties on hetetostructure International conference

    Rei Usami, Ryotaro Fukui, Takahiko Endo, Yasumitsu Miyata, Souma Suzuki, Togo Takahashi, Ryo Kitaura, Jiang Pu, Taishi Takenobu

    The 61st Fullerenes-Nanotubes-Graphene General Symposium  2021.9.1  The Fullerenes, Nanotubes, Graphene Research Society

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    Event date: 2021.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online   Country:Japan  

  26. Wire-to-Ribbon Conversion in Transition Metal Chalcogenides International conference

    Hong En Lim, Zheng Liu, Jiang Pu, Hiroshi Shimizu, Takahiko Endo, Yusuke Nakanishi, Taishi Takenobu, Yasumitsu Miyata

    The 61st Fullerenes-Nanotubes-Graphene General Symposium  2021.9  The Fullerenes, Nanotubes, Graphene Research Society

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    Event date: 2021.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online   Country:Japan  

  27. Air-Stable, Efficient Electron Doping of Monolayer MoS2 by Salt-Crown Ether Treatment International conference

    Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi, Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Takahiko Endo, Taishi Takenobu, Yasumitsu Miyata

    2021.3.2 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  28. Two-dimensional electron gas in laterally-assembled WTe atomic wires International conference

    Hiroshi Shimizu, Jiang Pu, Zheng Liu, Hong En Lim, Yusuke Nakanishi, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

    2021.3.2 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  29. Chiral electroluminescence in monolayer heterojunctions International conference

    Jiang Pu

    2020.9.25 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

  30. Electron transport properties of WTe nanowire networks International conference

    Hiroshi Shimizu, Jiang Pu, Hong En Lim, Yusuke Nakanishi, Zheng Liu, Takahiko Endo, Taishi Takenobu, Yasumitsu Miyata

    2020.9.18 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  31. Anomalous electroluminescence from WS2/WSe2 in-plane heterostructures International conference

    Naoki Wada, Jiang Pu, Tomoyuki Yamada, Wenjin Zhang, Zheng Liu, Yusuke Nakanishi, Yutaka Maniwa, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu, Yasumitsu Miyata

    2020.9.17 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  32. Superconducting properties in three-dimensional networks of NbSe2 films International conference

    Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu, Taishi Takenobu

    2020.9.17 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  33. Wafer-scale synthesis of 1D transition metal chalcogenide nanowires International conference

    Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata

    2020.9.17 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  34. One dimensionality of the thermoelectric properties in semiconducting single walled International conference

    Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, Kazuhiro Yanagi

    2020.9.16 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  35. 化学気相成長した大面積 NbSe2薄膜の超伝導特性

    高橋 統吾, 蒲 江, 安藤 千里, 中西 勇介, 斎藤 光史, 宮田 耕充, 竹延 大志

    応用物理学会  2020.9.10  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  36. 原子層面内ヘテロ接合を用いた発光デバイス International coauthorship

    蒲 江, Ming-Yang Li, Jing-Kai Huang, 和田 尚樹, 高口 裕平, Wenjin Zhang, 宮内 雄平, 松田 一成, 宮田 耕充, Lain-Jong Li, 竹延 大志

    応用物理学会  2020.9.10  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. 電解質を用いた原子層発光素子の発光特性

    蒲 江, 松岡 拓史, Juliette Tempia, 小林 佑, 宮田 耕充, Chang-Hsiao Chen, Lain-Jong Li, 竹延 大志

    日本物理学会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  38. 有機モット絶縁体κ-(BEDT-TTF)2Cu[N(CN)2]Clにおける非フェルミ液体的挙動とそのドーピング非対称性

    川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三

    日本物理学会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  39. Exciton polarizability and renormalization effects for optical modulation in monolayer semiconductors International conference

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    Event date: 2019.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  40. Interface electroluminescence from in-plane heterostructures based transition metal dichalcogenide monolayers International conference

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    Event date: 2019.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  41. Room-Temperature Valley-Polarized Light-Emitting Devices via strained monolayer semiconductors International conference

    2nd International Workshop on 2D Materials 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  42. Electric-field-induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers International conference

    2nd International Workshop on 2D Materials 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  43. Room temperature valley polarized light-emitting diodes of monolayer transition metal dichalcogenides International conference

    MNC2018 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  44. Direct Electroluminescence Imaging of Polycrystalline Monolayer Transition Metal Dichalcogenide Light-emitting Devices International conference

    MNC2018 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  45. Electronic and Thermoelectric Devices of CVD-grown Two-Dimensional Transition Metal Dichalcogenides

    Workshop on Thermal and Charge Transport across Flexible Nano-Interfaces 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  46. Room Temperature Valley Polarized Light-Emitting Diodes of Monolayer Transition Metal Dichalcogenides International conference

    RPGR2018 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  47. Electric Double Layer Transistors of CVD-grown monolayer InS and InSe International conference

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  48. Electric double layer light emitting diode of WS2/MoS2 in-plane heterostructures International conference

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  49. Universality in Transition Metal Dichalcogenide Light-Emitting Devices International conference

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  50. Direct Electroluminescence Imaging of Transition Metal Dichalcogenides International conference

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  51. 単層MoS2/WSe2面内ヘテロ接合発光ダイオード

    蒲江, Ming-Yang Li, Jing-Kai Huang, 宮内雄平, 松田一成, Lain-Jong Li, 竹延大志

    日本物理学会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学   Country:Japan  

  52. 電気二重層ドーピングとひずみ制御によるκ型ET塩の超伝導相の探索II

    川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三

    日本物理学会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学   Country:Japan  

  53. Monolayer WSe2-MoS2 Lateral Heterojunction Light-Emitting Diodes International conference

    Jiang Pu, Ming-Yang Li, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Lain-Jong Li, Taishi Takenobu

    The 54th Fullerenes-Nanotubes-Graphene General Symposium 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Venue:The University of Tokyo   Country:Japan  

  54. Electric-field-induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers International conference

    Tomoyuki Yamada, Jiang Pu, Lain-Jong Li, Taishi Takenobu

    The 54th Fullerenes-Nanotubes-Graphene General Symposium 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Venue:The University of Tokyo   Country:Japan  

  55. 多結晶遷移金属ダイカルコゲナイド単層膜の電流励起発光イメージング

    松岡拓史, 蒲江, Lain-Jong Li , 坂上知, 竹延大志

    応用物理学会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  56. Electroluminescence Imaging of Large-Area Transition Metal Dichalcogenide Light-emitting Diodes International conference

    Hirofumi Matsuoka, Lain-Jong Li, Jiang Pu, Taishi Takenobu

    The 53rd Fullerenes-Nanotubes-Graphene General Symposium 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University   Country:Japan  

  57. Electric Double Layer Light Emitting Diode of WSe2/MoSe2 in-plane heterostructures International conference

    Yuhei Takaguchi, Jiang Pu, Yu Kobayashi, Taishi Takenobu, Yutaka Maniwa, Yasumitsu Miyata

    The 53rd Fullerenes-Nanotubes-Graphene General Symposium 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto University   Country:Japan  

  58. Transport properties of CVD-grown monolayer MoS2 crystals International conference

    Tomomi Uchida, Yu Kobayashi, Jiang Pu, Taishi Takenobu, Takahiko Endo, Yutaka Maniwa, Yasumitsu Miyata

    The 53rd Fullerenes-Nanotubes-Graphene General Symposium 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto University   Country:Japan  

  59. WSe2/MoSe2面内ヘテロ構造を利用した電気二重層発光ダイオード

    高口裕平, 蒲江, 小林佑, 竹延大志, 真庭豊, 宮田耕充

    応用物理学会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:九州国際会議場   Country:Japan  

  60. 大面積MoS2単層膜における電界誘起金属-絶縁体転移

    蒲江, 山田知之, Lain-Jong Li, 松田達磨, 蓬田陽平, 柳和宏, 伊東 裕, 竹延 大志

    応用物理学会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州国際会議場   Country:Japan  

  61. 電解質を用いた単層遷移金属ダイカルコゲナイド発光素子

    蒲江, Wenjin Zhang, 松岡拓史, 小林佑, 高口裕平, 宮田 耕充, Lain-Jong Li, 松田一成, 宮内雄平, 竹延大志

    日本物理学会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岩手大学   Country:Japan  

  62. Direct Electroluminescence Imaging of Transition Metal Dichalcogenides

    Jiang Pu, Wenjin Zhang, Hirofumi Matsuoka, Yu Kobayashi, Yuhei Takaguchi, Yasumitsu Miyata, Lain-Jong Li, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu

    The 53th FNTG Symposium 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  63. 電気二重層ドーピングとひずみ制御によるκ型ET塩の超伝導相の探索

    川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三

    物理学会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岩手大学   Country:Japan  

  64. 多結晶MoS2単層膜における電界誘起金属-絶縁体転移 International conference

    蒲江, 枝川祐介, 三田村昌哉, 河合英輝, Lain-Jong Li, 蓬田 陽平, 柳 和宏, 伊東 裕, 竹延 大志

    日本物理学会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  65. MX2 / Graphiteファンデルワールスヘテロ接合界面におけるシュタルク効果

    蒲江, 松木 啓一郎, 小林佑, 佐々木将吾, 小澤大知, 宮田耕充, 竹延大志

    日本物理学会 第71回年次大会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  66. Highly Flexible and Extremely High-gain Complementary Inverters of Transition Metal Dichalcogenide Monolayers International conference

    J. Pu, K. Funahashi, C.-H. Chen, M.-Y. Li, L.-J. Li, and T. Takenobu

    ITC2016 

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    Event date: 2016.3

    Language:English   Presentation type:Poster presentation  

    Venue:Taiwan   Country:Taiwan, Province of China  

  67. High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

    Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong Li, Taishi Takenobu

    The 50th FNTG Symposium 

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    Event date: 2016.3

    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo   Country:Japan  

  68. Electric double layer light-emitting diodes of transition metal dichalcogenide monolayers Invited International conference

    Energy Material Nanotechnology (EMN) 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Chengdu, China   Country:China  

  69. Exploring electronic functionalities of transition metal dichalcogenides Invited

    The young researcher workshop of the 49th FNTG Symposium 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:Kyushu, Japan   Country:Japan  

  70. Carrier-density- and Electric-field-dependent Electroluminescence of Monolayer WSe2

    The 49th FNTG Symposium 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyushu, Japan   Country:Japan  

  71. 単層WSe2における電流励起発光の電場依存性

    蒲江, L. Chu, 坂上知, G. Eda, 竹延大志

    日本物理学会 2015年秋季大会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:関西大学   Country:Japan  

  72. Electric Double Layer Light-emitting Diodes of Monolayer WSe2 International conference

    J. Pu, T. Fujimoto, J.-K. Huang, L.-J. Li, G. Eda, T. Sakanoue, T. Takenobu

    NT15 

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    Event date: 2015.7

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  73. Flexible and Stretchable Thin-film Transistors and Inverters Based on Transition Metal Dichalcogenides

    Jiang Pu, Kazuma Funahashi, Lain-Jong Li, Taishi Takenobu

    EMS34 

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    Event date: 2015.7

    Language:English   Presentation type:Poster presentation  

    Venue:Shiga   Country:Japan  

  74. 単層WSe2を用いた電気二重層発光ダイオード

    蒲江, 藤本太陽, J.-K. Huang, L.-J. Li, 坂上知, 竹延大志

    日本物理学会 第70回年次大会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  75. Novel Functionalities in Electric Double Layer Transistors of CVD-grown Transition Metal Dichalcogenide Monolayers International conference

    J. Pu, L.-J. Li, T. Sakanoue, T. Takenobu

    IWEPNM2015 

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    Event date: 2015.3

    Language:English   Presentation type:Poster presentation  

    Venue:Kirchberg in Tirol, Austria   Country:Austria  

  76. Electric Double Layer Light-emitting Diodes of Monolayer WSe2

    J. Pu, T. Fujimoto, J.-K. Huang, L.-J. Li, T. Sakanoue, T. Takenobu

    The 48th FNTG Symposium 

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    Event date: 2015.2

    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo   Country:Japan  

  77. Flexible and stretchable thin-film transistors of transition metal dichalcogenides Invited

    Innovation in R&D of the Flexible Electronics -Toward the Inorganic Flexible Devices- 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  78. 単層遷移金属ダイカルコゲナイドにおける熱電効果の電場変調

    蒲江, 金橋魁利, N. T. Cuong, L.-J. Li, 岡田晋, 太田裕道, 竹延大志

    日本物理学会2014年秋季大会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  79. Electric Double Layer Transistors of Transition Metal Dichalcogenides International conference

    J. Pu, K. Funahashi, C.-H. Chen, Y. Iwasa, L.-J. Li, T. Takenobu

    RPGR2014 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Venue:Taiwan   Country:Taiwan, Province of China  

  80. 大面積単層WSe2薄膜を用いたPNフォトダイオード

    蒲江, 清水諒, C.-H. Chen, 岩佐義宏, L.-J. Li, 竹延大志

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  81. High gain CMOS inverters based on transition metal dichalcogenides

    J. Pu, J.-K. Huang, Y. Iwasa, L.-J. Li, T. Takenobu

    The 46th FNTG Symposium 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo   Country:Japan  

  82. 単層WSe2薄膜を用いた電気二重層トランジスタ

    蒲江, J.-K. Huang, 清水諒, 舟橋一真, L.-J. Li, 岩佐義宏, 竹延大志

    日本物理学会 2013年秋季大会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:徳島大学   Country:Japan  

  83. 遷移金属ダイカルコゲナイドを用いた電気二重層トランジスタ

    蒲江, J.-K. Huang, 清水諒, 舟橋一真, L.-J. Li, 岩佐義宏, 竹延大志

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  84. Flexible, stretchable MoS2 thin-film transistors with ion-gel gate dielectrics International conference

    J. Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu

    APPC12 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chiba, Japan   Country:Japan  

  85. Flexible, stretchable MoS2 thin-film transistors with ion-gel gate dielectrics International conference

    J. Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu

    Flexible Electronics 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Erlangen, Germany   Country:Germany  

  86. Fabrication of Stretchable MoS2 Thin-film Transistors Using Elastic Ion-Gel Gate Dielectrics International conference

    J. Pu, Y. Zhang, Y. Wada, J. T.-W. Wang, L.-J. Li, Y. Iwasa, T. Takenobu

    NT13 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Venue:Espoo, Finland   Country:Finland  

  87. MoS2電気二重層トランジスタにおける一軸性歪みの影響

    蒲江, 張奕勁, 和田義史, J. Wang, L.-J. Li, 岩佐義宏, 竹延大志

    日本物理学会 第68回年次大会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  88. Ambipolar organic single-crystal transistors based on ion gels International conference

    J. Pu, Y. Yomogida, H. Shimotani, S. Ono, S. Hotta, Y. Iwasa, T. Takenobu

    ICFPE2012 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo   Country:Japan  

  89. イオンゲルを用いたMoS2薄膜トランジスタ

    蒲江, 蓬田陽平, K.-K. Liu, L.-J. Li, 岩佐義宏, 竹延大志

    日本物理学会 2012年秋季大会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜国立大学   Country:Japan  

  90. フレキシブルMoS2薄膜トランジスタ

    蒲江, 蓬田陽平, K.-K. Liu, L.-J. Li, 岩佐義宏, 竹延大志

    第74回応用物理学会秋季学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学   Country:Japan  

  91. イオンゲルを用いた単結晶両極性電気二重層トランジスタ

    蒲江, 蓬田陽平, 下谷秀和, 山雄健史, 堀田収, 岩佐義宏, 竹延大志

    日本物理学会 第67回年次大会 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:関西学院大学   Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 2

  1. IoTセンシングのためのフレキシブル近赤外光デバイス

    2021.4 - 2022.3

    牧誠記念研究助成 

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    Authorship:Principal investigator  Grant type:Other

    Grant amount:\1000000

  2. ナノカーボン原子層材料による高機能・高性能熱電変換デバイスの創出

    2020.9 - 2022.9

    公益財団法人近藤記念財団研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\1300000

KAKENHI (Grants-in-Aid for Scientific Research) 7

  1. 2.5次元構造の新奇物性開拓

    Grant number:2 1 H 0 5 2 3 6  2021.10 - 2026.3

    日本学術振興会  科学研究費助成事業  学術変革領域研究(A)

    蒲 江

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  2. ナノ構造体の局所力学場制御によるバレートロニクスデバイスの創製

    Grant number:20H05189  2020.4 - 2022.3

    科学研究費助成事業  新学術領域研究(研究領域提案型)

    蒲 江

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    Authorship:Principal investigator 

    Grant amount:\5980000 ( Direct Cost: \4600000 、 Indirect Cost:\1380000 )

    本研究の目標は、遷移金属ダイカルコゲナイド(TMDC)において力学特性がもたらす局所電子構造変化を解明・制御することで、全く新しい電子機能(バレートロニクス)デバイスの実現を目指す。具体的には、TMDCが有するバレー構造の力学的制御手法を基軸とし、バレー自由度を機能化した電子・光デバイスを作製する。まず、機械的変形に対する結晶構造と局所電子構造の相関を解明する。次に、力学制御されたTMDCにおいて電気的に純バレー流を生成する手法を確立する。最終的には、これら力学的アプローチと電解質によるデバイス技術を融合することで、電気的に光―バレー変換機能を有する円偏光発光・受光デバイスを実現する。

  3. 原子層遷移金属ダイカルコゲナイドによる室温円偏光レーザー素子の創出

    Grant number:19K15383  2019.4 - 2022.3

    科学研究費助成事業  若手研究

    蒲 江

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    Authorship:Principal investigator 

    Grant amount:\4160000 ( Direct Cost: \3200000 、 Indirect Cost:\960000 )

    本研究の目標は、次世代光量子通信を担う円偏光光源の創出である。具体的には、空間反転対称性が破れた原子層材料、遷移金属ダイカルコゲナイド(TMDC)、が有する特異な電子構造(バレー分極)を利用することで、室温において円偏光発光の電気的制御法を確立する。さらに、光共振器の導入を行うことで、最終的には世界初となる室温円偏光レーザー素子の作製を目指す。本研究を通して、円偏光光源創出に向けた物性・素子・機能の統一的な基盤技術を確立する。
    本研究の目標は、次世代光量子通信を担う円偏光光源の創出である。具体的には、空間反転対称性が破れた原子層物質、遷移金属ダイカルコゲナイド(TMDC)、が有する特異な電子構造(バレー分極)を利用することで、室温において円偏光発光の電気的制御法を確立する。さらに、光共振器の導入を行うことで、最終的には室温円偏光レーザー素子の作製を目指す。
    本研究目的に対し、本年度はTMDCヘテロ構造を用いた発光素子を作製し(I)ヘテロ界面歪みによる高効率な室温円偏光発光の生成・制御と、(II)光共振器導入による励起子-ポラリトン発光観測の2項目について取り組んだ。以下にそれぞれの項目に関して研究実績の概要を示す。
    (I)ヘテロ接合を用いた室温円偏光発光素子
    まず化学成長したWS2/WSe2面内ヘテロ単層膜を用いて電解質発光素子を作製し、ヘテロ界面からの電流励起発光を直接観測した。次に、界面発光の円偏光分解発光分光を測定したところ、室温において10%以上の高い円偏光分極が観測された。最後、ヘテロ界面の原子配列を電子顕微鏡で評価した結果、界面歪みが室温円偏光発光生成の起源であると明らかになった。本手法により、化学合成による大面積化やパターニングも可能となり、高効率なTMDC円偏光発光素子応用が期待できる。
    (II)光共振器による励起子-ポラリトン発光の観測
    室温円偏光レーザー発振を目指し、光共振器を導入して励起子-ポラリトン発光観測を行った。励起子-ポラリトンはバレー分極(円偏光)を維持したまま、極めて閾値の低いレーザー発振が期待されている。そこで、電解質発光素子にミラー型共振器を作りこみ、光励起発光による角度分解分光評価を行った。その結果、励起子-ポラリトン発光特有の分散関係を室温で観測した。したがって、今後は本素子に高電流密度を誘起することで、電流励起による円偏光(ポラリトン)レーザー発振が期待できる。
    本研究の目的は、原子層遷移金属ダイカルコゲナイド(TMDC)を用いた室温円偏光レーザー素子の創出である。具体的には、空間反転対称性の破れに起因するTMDCの特異な電子構造(バレー分極)と独自考案した電解質発光素子を組み合わせる。これに加え、歪みを用いたバレー分極制御を導入することで、室温において電気的に円偏光発光を制御する手法を確立する。さらに、光共振器の導入も行うことで、世界初となる電流励起円偏光レーザー発振の実現を目指す。
    これに対し、本年度の目標は、昨年度確立したバレー制御手法を用いて高性能な室温円偏光素子を作製し、光共振器の導入を行い電流励起による共振器発光観測が当初の予定であった。実際に、ヘテロ接合試料を導入することで、ヘテロ界面歪みに起因した高効率な室温円偏光発光素子の作製に成功した。これにより、外部からの応力印可なしに円偏光発光素子の作製が可能となり、化学合成の利点を活かした素子応用可能性が高まった。また、電解質発光素子に光共振器の作りこみも容易となり、室温において円偏光レーザー発振が期待できる励起子-ポラリトン発光の観測にも成功した。
    以上の結果を踏まえ、来年度は本年度に確立した素子構造に高電流密度印可やパルス印可等の測定手法を組み合わせることで、本研究提案の目標である電流励起による室温円偏光レーザー発振の実現が期待できる。
    本年度の研究成果である、高効率ヘテロ円偏光発光素子と光共振器による励起子-ポラリトン発光を組み合わせることで、今後は室温における円偏光レーザー素子の創出を試みる。
    具体的にはまず、共振器を導入した電解質発光素子において、世界で初めて原子層TMDCにおいて電流励起レーザー発振を行う。特に、レーザー発振を行うためには十分な電流(励起子)密度を注入する必要があり、パルス測定等を活用することで、TMDC発光素子への高電流密度注入を試みる。さらに、デバイスシミュレーター等を利用して共振器構造の最適化を行い、より低電圧かつ低電流密度でのレーザー発振も狙う。
    次に、歪み印可試料及びヘテロ接合試料と共振器発光素子を組み合わせ、歪みを利用した円偏光レーザー発振の実現を行う。円偏光レーザー発振は共振器媒質・設計や検出方法等の条件最適化が必須と考えられ、適宜条件出しや素子性能のフィードバックを通して、電流励起における発振特性の解明に取り組む。最後、高電流密度下においてレーザー素子の円偏光発光特性評価を行うことで、室温において円偏光レーザー発振を目指す。

  4. 原子層遷移金属ダイカルコゲナイドによる室温円偏光レーザー素子の創出

    2019.4 - 2021.3

    科学研究費補助金 

    蒲 江

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    Authorship:Principal investigator 

    本研究の目標は、次世代光量子通信を担う円偏光光源の創出である。具体的には、空間反転対称性が破れた原子層材料、遷移金属ダイカルコゲ
    ナイド(TMDC)、が有する特異な電子構造(バレー分極)を利用することで、室温において円偏光発光の電気的制御法を確立する。さらに、光
    共振器の導入を行うことで、最終的には世界初となる室温円偏光レーザー素子の作製を目指す。本研究を通して、円偏光光源創出に向けた物性
    ・素子・機能の統一的な基盤技術を確立する。

  5. 原子層遷移金属ダイカルコゲナイドを用いた高機能・高性能光デバイスの創出

    2017.9 - 2019.3

    科学研究費補助金  研究活動スタート支援

    蒲 江

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    Authorship:Principal investigator 

    本研究では、Internet of Things(IoT)を体現する革新的光機能デバイスを実現する。具体的には、多彩な(可視―赤外)発光領域を有する原子層遷移金属ダイカルコゲナイド(TMDC)と電気化学に立脚したドーピング技術を組み合わせることで、原子層近赤外発光・受光デバイスの作製及びその高機能化と高性能化を目的とする。特に、応募者は原子層TMDCに電解質を用いたユニークな構造を導入することで、極めて簡易な構造と簡便なプロセスで発光及び受光を創出する手法を開発している。このノウハウを活かし、世界に先駆けて原子層TMDCにおける高柔軟性・高伸縮性(高機能)と高効率・高感度(高性能)を両立する発光・受光デバイスを実現する。本研究を通して、IoT社会を下支えする環境・生体センシングに特化した、機能性光デバイスの材料物性とデバイス物理両面の基礎技術を構築する。

  6. High-performance and functional optoelectronic devices of atomically thin transition metal dichalcogenides

    Grant number:17H06736  2017.8 - 2019.3

    PU JIANG

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    Authorship:Principal investigator 

    Grant amount:\2990000 ( Direct Cost: \2300000 、 Indirect Cost:\690000 )

    The purpose of this proposal was to realize high-performance and functional light-emitting devices of atomically thin transition metal dichalcogenides (TMDCs) with electrolyte-based device structures. To achieve this goal, first, we fabricated light-emitting devices with various TMDCs and their heterostructures. We evaluated fundamental optical properties with wide-range (VIS-NIR) light emission spectra in these devices. Second, we established solution-based transferred methods and build the devices on the plastic substrates, resulting in highly flexible TMDC light-emitting devices. Finally, we also tried to embed the cavity structure inside light-emitting devices to enhance their efficiency. Furthermore, we found out a unique origin to realize circularly polarized light-emitting devices in TMDCs, which will open new pathways for exploring new functional optoelectronic devices based on atomically thin TMDCs.

  7. 二次元材料によるプリンテッド・アンビエントエレクトロニクスの実現

    Grant number:14J07485  2014.4 - 2017.3

    科学研究費補助金  特別研究員(DC1)

    蒲江

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    Authorship:Principal investigator 

    本研究の目的は印刷による二次元材料を用いた柔軟な論理回路の実現であり、材料及びデバイス両面を相補的に理解することによって、最終的には世界初の印刷型アンビエントエレクトロニクスを実現する。これまでの研究によって、化学気相成長(CVD法)で合成した遷移金属ダイカルコゲナイド(TMDC)を用いて高移動度・高電流オンオフ比・高柔軟性を実現し、本材料における素子応用の最低限の条件が満たされたとは言え、今後柔軟な論理回路実現に向けては解決すべき問題が残されている。ポイントとしては、CMOS論理回路構築のためのトランジスタの高性能化・極性制御、設備投資を激減させる印刷技術の導入、具体的な集積化の導入があげられる。そこで本研究において取り組むべき研究項目として、(i)様々なTMDC材料の合成技術を確立し、それらを用いたトランジスタの高性能化と極性制御、(ii)薄膜加工および印刷技術の確立、(iii)ウエハースケールでの論理回路作製、の三項目を通して柔軟性・伸縮性を有する最低限の電子素子作製に不可欠な基盤技術を構築し、世界初の印刷によるウェアラブル・コンピューティング実現の足がかりとする。

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Teaching Experience (On-campus) 7

  1. 物理工学実験第1

    2020

  2. 物理工学実験第2

    2020

  3. 物理工学実験第2

    2019

  4. 物理工学実験第1

    2019

  5. 応用物理学実験第2及び第3

    2018

  6. 応用物理学実験第1

    2018

  7. 応用物理学実験第2及び第3

    2017

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