Updated on 2021/03/24

写真a

 
ONDA Shoichi
 
Organization
Institute of Materials and Systems for Sustainability Donated Research Division Endowment Division of Power Electronics (DENSO) Designated professor
Title
Designated professor

Degree 1

  1. 博士(工学) ( 2013.5   筑波大学 ) 

Research Areas 1

  1. Nanotechnology/Materials / Applied condensed matter physics

Research History 1

  1. 株式会社デンソー

    1982.4 - 2016.4

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    Country:Japan

Education 1

  1. Nagoya University   Graduate School, Division of Physics

    - 1982.3

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    Country: Japan

Professional Memberships 1

  1. 応用物理学会

 

Papers 5

  1. Transmission electron microscope study of a threading dislocation with b=[0001]+< > and its effect on leakage in a 4H-SiC MOSFET Reviewed

      Vol. 93 ( 8 ) page: 439   2013

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    Language:English   Publishing type:Research paper (scientific journal)  

  2. The dissociation modes of threading screw dislocations in 4H-SiC Reviewed

    S.Onda, H.Watanabe, Y.Kitou, H.Kondo, H.Uehigashi, K.Shiraishi, H.Saka

    Philosophical magazine Letters   Vol. 93 ( 10 ) page: 591   2013

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    Language:English   Publishing type:Research paper (scientific journal)  

  3. First Principles Theoretical Study of 4H-SiC/SiO2 Interfacial Electronic States on (0001), (000-1), and (11-20) Reviewed

    E.Okuno, T.Sakakibara, S.Onda

    Appl. Phys. Express Vol. 1(6), pp. 061401 (2008).   Vol. 1   page: 061401   2008

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    Language:English   Publishing type:Research paper (scientific journal)  

  4. Ultrahigh-quality silicon carbide single crystals Reviewed

    D.Nakamura, K.Katori, S.Onda

    Nature, Vol. 43, pp. 1009-1012 (2004)   Vol. 43   page: 1009-1012   2004

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    Language:English   Publishing type:Research paper (scientific journal)  

  5. Mechanism of Nitrogen Incorporation in Sublimation Growth of SiC Reviewed

    M.Naitoh, K.Hara, F. Hirose, S.Onda

    Journal of Crystal Growth   Vol. 237   page: 1192-1195   2002

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    Language:English   Publishing type:Research paper (scientific journal)  

Presentations 13

  1. Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC International conference

    CSCRM2015  

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    Event date: 2015.10.4 - 2015.10.9

    Language:English   Presentation type:Poster presentation  

    Country:Italy  

  2. パワーエレクトロニクスの最新動向 Invited

    恩田正一

    学術振興会154委員会 第7回講演会 

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    Event date: 2014.10.16

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  3. パワーデバイスにむけてのSiC結晶成長技術の理解と課題

    恩田正一

    応用電子物性分科会6月研究会 

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    Event date: 2014.6.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  4. 企業が求める研究者像 Invited

    恩田正一

    つくばナノテク拠点シンポジウム 

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    Event date: 2013.3.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Country:Japan  

  5. 次世代自動車向けSiCパワーデバイスの開発状況と課題 Invited

    恩田正一

    セミコンジャパン2012 技術セミナー 

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    Event date: 2012.12.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  6. SiC技術の進展 SiC半導体の基礎技術 Invited

    恩田正一

    第40回 薄膜・表面物理セミナー 

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    Event date: 2012.8.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  7. SiCパワーデバイスの現状と課題 Invited

    恩田正一

    学術振興会161委員会第71回技術研究会 

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    Event date: 2011.9.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  8. 高品質SiCウエハの作製とパワーデバイス応用 Invited

    恩田正一

    学術振興会162委員会技術セミナー 

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    Event date: 2011.3.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  9. 自動車用パワーデバイスの最新動向 Invited

    恩田正一

    第12回半導体パッケージング技術展 技術セミナー, 

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    Event date: 2011.1.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  10. SiC crystal growth with high temperature gas method International conference

    VASSCAA-4, Matsue 

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    Event date: 2008.10.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  11. ガス結晶成長法によるSiC結晶成長 International conference

    恩田正一、木藤泰男、原一都

    SiCおよび関連ワイドギャップ半導体研究会第16回講演会 

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    Event date: 2007.11.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  12. SiC基板・デバイスのハイパワー応用 International conference

    恩田正一、奥野英一

    第23回人工結晶工学会特別講演会 

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    Event date: 2005.4.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  13. SiC基板・デバイスのハイパワー応用 Invited

    恩田正一

    SiCおよび関連ワイドギャップ半導体研究会第13回講演会 

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    Event date: 2004.10.22

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

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Industrial property rights 2

  1. 炭化珪素単結晶の製造方法

    恩田正一

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    Application no:9163087  Date applied:1997

    Announcement no:11-12096 

    Patent/Registration no:3876488  Date registered:2008 

    Country of applicant:1  

  2. EL表示装置

    恩田正一

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    Application no:25564  Date applied:1996

    Announcement no:9-218652 

    Patent/Registration no:3577821  Date registered:2008 

    Country of applicant:1