Updated on 2021/12/03

写真a

 
MORI Yusuke
 
Organization
Institute of Materials and Systems for Sustainability Toyota Advanced Power Electronics Funded Research Division Designated professor
Title
Designated professor

Degree 1

  1. 博士(工学) ( 1996.3   大阪大学 ) 

 

Papers 25

  1. Identification of Burgers vectors of threading dislocations in free-standing GaN substrates via multiphoton-excitation photoluminescence mapping

    Mayuko Tsukakoshi, Tomoyuki Tanikawa, Takumi Yamada, Masayuki Imanishi, Yusuke Mori, Masahiro Uemukai and Ryuji Katayama

    Applied Physics Express   Vol. 14 ( 5 )   2021

  2. Activation free energies for formation and dissociation of N–N, C–C, and C–H bonds in a Na–Ga melt

    Takahiro Kawamura, Masayuki Imanishi, Masashi Yoshimur, Yusuke Mori and Yoshitada Morikawa

    Computational Materials Science   Vol. 194   2021

  3. Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation

    Akira Uedono, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masayuki Imanishi, Shoji Ishibashi, Yusuke Mori

    Journal of Crystal Growth     2021

  4. Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

    Takeaki Hamachi, Tetsuya Tohei, Yasuaki Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Nobuyuki Ikarashi and Akira Sakai

    Journal of Applied Physics   Vol. 129 ( 22 )   2021

  5. Terahertz time‑domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

    Verdad C. Agulto, Toshiyuki Iwamoto, Hideaki Kitahara, Kazuhiro Toya, Valynn Katrine Mag‑usara, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura, Makoto Nakajima

    Scientific reports   Vol. 11   2021

  6. Growth of GaN single crystals with high transparency by the Li-added Na-flux method

    Tatsuhiko Nakajima, Masayuki Imanishi, Takumi Yamada, Kosuke Murakami, Masahi Yoshimura, and Yusuke Mori

    Journal of Crystal Growth   Vol. 535   2020

  7. Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon

    Akira Kitamoto, Yohei Yamaguchi, Shintaro Tsuno, Keiji Ishibashi, Yoshikazu Gunji, Masayuki Imanish. Mamoru Imade, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, and Yusuke Mori

    Journal of Crystal Growth   Vol. 535   2020

  8. Fabrication of GaN crystals with low threading dislocation density and low resistivity grown by thin-flux-growth in the Na-flux point seed technique

    Kiyoto Endo, Masayuki Imanishi, Hitoshi Kubo, Takumi Yamada, Kosuke Murakami, Masashi Yoshimura, and Yusuke Mori

    Japanese Journal of Applied Physics   Vol. 59 ( 3 )   2020

  9. Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process

    Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura, and Yusuke Mori

    Japanese Journal of Applied Physics   Vol. 59 ( 2 )   2020

  10. Temperature dependence of nitrogen dissolution on Na flux growth

    Ricksen Tandryo, Kosuke Murakami, Kanako Okumura, Takumi Yamada, Tomoko Kitamura, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori

    Journal of Crystal Growth   Vol. 535   2020

  11. Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

    Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Naomi Asai, Hiroshi Ohta, Tomoyoshi Mishima and Yusuke Mori

    Applied Physics Express   Vol. 13 ( 7 )   2020

  12. Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method

    Masayuki Imanishi, Kanako Okumura, Kousuke Nakamura, Tomoko Kitamura, Keisuke Kakinouchi, Kosuke Murakami, Masashi Yoshimura, Yu Fujita, Yoshiyuki Tsusaka, Junji Matsui and Yusuke Mori

    Applied Physics Express   Vol. 13 ( 8 )   2020

  13. High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

    Ayumu Shimizu, Shintaro Tsuno, Masahiro Kamiyama, Keiju Ishibashi, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Masahiko Hata, Masashi Isemura and Yusuke Mori

    Applied Physics Express   Vol. 13 ( 9 )   2020

  14. Absolute surface energies of oxygen-adsorbed GaN surfaces

    Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa and Koichi Kakimoto

    Journal of Crystal Growth   Vol. 549   2020

  15. Local piezoelectric properties in Na-flux GaN bulk single crystals

    Akira Ueda, Takeaki Hamachi, Akinori Okazaki, Shotaro Takeuchi, Tetsuya Tohei, Masayuki Imanishi, Mamoru Imade, Yusuke Mori and Akira Sakai

    Journal of Applied Physics   Vol. 128 ( 12 )   2020

  16. Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth

    Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura, and Yusuke Mori

    Journal of Crystal Growth   Vol. 532   2019

  17. Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method

    Masayuki Imanishi, Kosuke Murakami, Takumi Yamada, Keisuke Kakinouchi, Kosuke Nakamura, Tomoko Kitamura, Kanako Okumura, Masashi Yoshimura, and Yusuke Mori

    Applied Physics Express   Vol. 12 ( 4 )   2019

  18. Effect of methane additive on GaN growth using the OVPE method

    Aakira Kitamoto, Junichi Takino, Tomoaki Sumi, Masahiro Kamiyama, Shintaro Tsuno, Keiji Ishibashi, Yoshikazu Gunji, Masayuki Imanishi, Yoshio Okayama, Masaki Nobuoka, Masashi Isemura, Masashi Yoshimura and Yusuke Mori

    Japan Journal of Applied Physics   Vol. 58 ( SC )   2019

  19. Recent progress of Na-flux method for GaN crystal growth

    Yusuke Mori, Masayuki Imanishi, Kosuke Murakami, and Masashi Yoshimura

    Japanese Journal of Applied Physics   Vol. 58   2019

  20. Monitoring of Ga-Na melt electrical resistance and its correlation with crystal growth on the Na Flux method

    Ricksen Tandryo, Kosuke Murakami, Tomoko Kitamura, Masayuki. Imanishi, and Yusuke Mori

    Applied Physics Express   Vol. 12 ( 6 )   2019

  21. Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method

    Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masaki Nobuoka, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori

    Japanese Journal of Applied Physics   Vol. 58 ( SC )   2019

  22. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

    Robert Rounds, Biplab Sarkar, Tomasz Sochacki, Michal Bockowski, Masayuki Imanishi, Yusuke Mori, Ronny Kirste, Ramón Collazo, and Zlatko Sitar

    Journal of Applied Physics   Vol. 124 ( 10 )   2018

  23. Homoepitaxial HVPE growth on GaN wafers manufactured by the Na-flux method

    Masayuki Imanishi, Takehiro Yoshida, Tomoko Kitamura, Kosuke Murakami, Mamoru Imade, Masashi Yoshimura, Masastomo Shibata, Yoshiyuki Tsusaka, Junji Matsui, and Yusuke Mori

    Crystal Growth & Design     2017

  24. Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method

    Kosuke Murakami, Shogo Ogawa, Masayuki Imanishi, Mamoru Imade, Mihoko Maruyama, Masashi Yoshimura, and Yusuke Mori

    Japanese Journal of Applied Physics   Vol. 56 ( 5 )   2017

  25. Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed

    Masatoshi Hayashi, Masayuki Imanishi, Takumi Yamada, Daisuke Matsuo, Kosuke Murakami, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori

    Journal of Crystal Growth   Vol. 468   page: 827 - 830   2017

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