Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method

Masayuki Imanishi, Kanako Okumura, Kousuke Nakamura, Tomoko Kitamura, Keisuke Kakinouchi, Kosuke Murakami, Masashi Yoshimura, Yu Fujita, Yoshiyuki Tsusaka, Junji Matsui and Yusuke Mori

Applied Physics Express   Vol. 13 ( 8 )   2020

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

Ayumu Shimizu, Shintaro Tsuno, Masahiro Kamiyama, Keiju Ishibashi, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Masahiko Hata, Masashi Isemura and Yusuke Mori

Applied Physics Express   Vol. 13 ( 9 )   2020

Absolute surface energies of oxygen-adsorbed GaN surfaces

Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa and Koichi Kakimoto

Journal of Crystal Growth   Vol. 549   2020

Local piezoelectric properties in Na-flux GaN bulk single crystals

Akira Ueda, Takeaki Hamachi, Akinori Okazaki, Shotaro Takeuchi, Tetsuya Tohei, Masayuki Imanishi, Mamoru Imade, Yusuke Mori and Akira Sakai

Journal of Applied Physics   Vol. 128 ( 12 )   2020

Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Naomi Asai, Hiroshi Ohta, Tomoyoshi Mishima and Yusuke Mori

Applied Physics Express   Vol. 13 ( 7 )   2020

Growth of GaN single crystals with high transparency by the Li-added Na-flux method

Tatsuhiko Nakajima, Masayuki Imanishi, Takumi Yamada, Kosuke Murakami, Masahi Yoshimura, and Yusuke Mori

Journal of Crystal Growth   Vol. 535   2020

Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon

Akira Kitamoto, Yohei Yamaguchi, Shintaro Tsuno, Keiji Ishibashi, Yoshikazu Gunji, Masayuki Imanish. Mamoru Imade, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, and Yusuke Mori

Journal of Crystal Growth   Vol. 535   2020

Fabrication of GaN crystals with low threading dislocation density and low resistivity grown by thin-flux-growth in the Na-flux point seed technique

Kiyoto Endo, Masayuki Imanishi, Hitoshi Kubo, Takumi Yamada, Kosuke Murakami, Masashi Yoshimura, and Yusuke Mori

Japanese Journal of Applied Physics   Vol. 59 ( 3 )   2020

Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process

Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura, and Yusuke Mori

Japanese Journal of Applied Physics   Vol. 59 ( 2 )   2020

Temperature dependence of nitrogen dissolution on Na flux growth

Ricksen Tandryo, Kosuke Murakami, Kanako Okumura, Takumi Yamada, Tomoko Kitamura, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori

Journal of Crystal Growth   Vol. 535   2020

Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth

Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura, and Yusuke Mori

Journal of Crystal Growth   Vol. 532   2019

Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method

Masayuki Imanishi, Kosuke Murakami, Takumi Yamada, Keisuke Kakinouchi, Kosuke Nakamura, Tomoko Kitamura, Kanako Okumura, Masashi Yoshimura, and Yusuke Mori

Applied Physics Express   Vol. 12 ( 4 )   2019

Effect of methane additive on GaN growth using the OVPE method

Aakira Kitamoto, Junichi Takino, Tomoaki Sumi, Masahiro Kamiyama, Shintaro Tsuno, Keiji Ishibashi, Yoshikazu Gunji, Masayuki Imanishi, Yoshio Okayama, Masaki Nobuoka, Masashi Isemura, Masashi Yoshimura and Yusuke Mori

Japan Journal of Applied Physics   Vol. 58 ( SC )   2019

Recent progress of Na-flux method for GaN crystal growth

Yusuke Mori, Masayuki Imanishi, Kosuke Murakami, and Masashi Yoshimura

Japanese Journal of Applied Physics   Vol. 58   2019

Monitoring of Ga-Na melt electrical resistance and its correlation with crystal growth on the Na Flux method

Ricksen Tandryo, Kosuke Murakami, Tomoko Kitamura, Masayuki. Imanishi, and Yusuke Mori

Applied Physics Express   Vol. 12 ( 6 )   2019

Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method

Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masaki Nobuoka, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori

Japanese Journal of Applied Physics   Vol. 58 ( SC )   2019

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Robert Rounds, Biplab Sarkar, Tomasz Sochacki, Michal Bockowski, Masayuki Imanishi, Yusuke Mori, Ronny Kirste, Ramón Collazo, and Zlatko Sitar

Journal of Applied Physics   Vol. 124 ( 10 )   2018

Homoepitaxial HVPE growth on GaN wafers manufactured by the Na-flux method

Masayuki Imanishi, Takehiro Yoshida, Tomoko Kitamura, Kosuke Murakami, Mamoru Imade, Masashi Yoshimura, Masastomo Shibata, Yoshiyuki Tsusaka, Junji Matsui, and Yusuke Mori

Crystal Growth & Design     2017

Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method

Kosuke Murakami, Shogo Ogawa, Masayuki Imanishi, Mamoru Imade, Mihoko Maruyama, Masashi Yoshimura, and Yusuke Mori

Japanese Journal of Applied Physics   Vol. 56 ( 5 )   2017

Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed

Masatoshi Hayashi, Masayuki Imanishi, Takumi Yamada, Daisuke Matsuo, Kosuke Murakami, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori

Journal of Crystal Growth   Vol. 468   page： 827 - 830   2017