Updated on 2021/12/06

写真a

 
HASHIZUME Tamotsu
 
Organization
Institute of Materials and Systems for Sustainability Toyota Advanced Power Electronics Funded Research Division Designated professor
Title
Designated professor

Degree 1

  1. 工学博士 ( 1991   北海道大学 ) 

 

Papers 5

  1. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate and surface passivation Invited Reviewed

    Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova and Tamotsu Hashizume, (Invited Tutorial)

    J. Appl. Phys.     2021

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  2. Interface characterization of Al2O3/m-plane GaN structure Invited Reviewed

    S. Kaneki and T. Hashizume

    AIP Advances   Vol. 11   2021

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  3. Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor Invited Reviewed

    R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki, T. Sato and T. Hashizume

    AIP Advances   Vol. 10   2020

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  4. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching Invited Reviewed

    S. Yamada, M. Omori, H. Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, and T. Kachi

    Appl. Phys. Express   Vol. 13   2020

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  5. Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates Invited Reviewed

    Y. Ando, S. Kaneki and T. Hashizume

    Appl. Phys. Express   Vol. 12   2019

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