研究者詳細 - 黒川　康良

論文 - 黒川　康良

分割表示 >> ／全件表示 154 件中 1 - 154 件目

Bayesian optimization of hydrogen plasma treatment in silicon quantum dot multilayer and application to solar cells 査読有り国際誌

Fuga Kumagai, Kazuhiro Gotoh, Satoru Miyamoto, Shinya Kato, Kentaro Kutsukake, Noritaka Usami, Yasuyoshi Kurokawa

Nanoscale Research Letters 18 巻 ( 1 ) 頁： 43 2023年3月

Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing 査読有り国際誌

Y. Kurokawa, K. Sato, K. Shibata, S. Kato, S. Miyamoto, K. Gotoh, T. Itoh, N. Usami

Materials Science in Semiconductor Processing 163 巻頁： 107552 2023年8月

Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers 査読有り国際誌

Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami, Yasuyoshi Kurokawa

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SC ) 頁： SC1074 2023年2月

Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment 査読有り国際誌

APPLIED PHYSICS EXPRESS 14 巻 ( 2 ) 頁： 025503 2021年2月

Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers 査読有り国際誌

Kobayashi Hisayoshi, Akaishi Ryushiro, Kato Shinya, Kurosawa Masashi, Usami Noritaka, Kurokawa Yasuyoshi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SG ) 頁： SGGF09 2020年4月

Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer 査読有り国際誌

Ryushiro Akaishi, Kohei Kitazawa, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

Nanoscale Research Letters 15 巻 ( 1 ) 頁： 39 2020年

Local Structure of High Performance TiO <inf>x</inf> Electron-Selective Contact Revealed by Electron Energy Loss Spectroscopy 査読有り国際誌

Mochizuki Takeya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Yamamoto Takahisa, Usami Noritaka

Advanced Materials Interfaces 6 巻 ( 3 ) 頁： 1801645 2019年2月

Bandgap tuning of silicon nanowire arrays for application to all-silicon tandem solar cells 査読有り国際誌

Y. Kurokawa, M. Yano, S. Miyajima, and A. Yamada

Jpn. J. Appl. Phys. 56 巻頁： 04CS03 2017年2月

Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice 査読有り国際誌

Kurokawa Yasuyoshi, Tomita Shigeki, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 46 巻 ( 33-35 ) 頁： L833 - L835 2007年9月

Preparation of nanocrystalline silicon in amorphous silicon carbide matrix 査読有り国際誌

Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 45 巻 ( 37-41 ) 頁： L1064 - L1066 2006年10月

Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts 査読有り

Matsumi, M; Gotoh, K; Wilde, M; Kurokawa, Y; Fukutani, K; Usami, N

NANOTECHNOLOGY 35 巻 ( 10 ) 2024年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nanotechnology

We investigate the effect of hydrogen passivation of dangling bonds in silicon oxide passivating contacts with embedded silicon nanocrystals (NAnocrystalline Transport path in Ultra-thin dielectrics for REinforced passivation contact, NATURE contact). We first investigated the differences in electrical properties of the samples after hydrogen gas annealing and hydrogen plasma treatment (HPT). The results show that the NATURE contact was efficiently passivated by hydrogen after HPT owing to the introduction of hydrogen radicals into the structure. Furthermore, we examined the dependence of process parameters such as HPT temperature, duration, and H2 pressure, on the electrical properties and hydrogen depth profiles. As a result, HPT at 500 °C, 15 min, and 0.5 Torr resulted in a large amount of hydrogen inside the NATURE contact and the highest implied open-circuit voltage of 724 mV. Contact resistivity and surface roughness hardly increased when HPT was performed under the optimized condition, which only improved the passivation performance without deteriorating the electron transport properties of the NATURE contact.

DOI： 10.1088/1361-6528/ad115d

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PubMed

Core-shell yarn-structured triboelectric nanogenerator for harvesting both waterdrop and biomechanics energies 査読有り

Wang, HT; Kurokawa, Y; Zhang, JH; Gotoh, K; Liu, X; Miyamoto, S; Usami, N

APPLIED PHYSICS EXPRESS 17 巻 ( 1 ) 2024年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Wearable energy harvesters (WEHs) have garnered significant attention recently due to their promising capabilities in powering wearable devices. In this research, we present a core-shell yarn-structured triboelectric nanogenerator (CY-TENG) that operates in two modes: the single-electrode TENG (SE-TENG) and the droplet-based electricity generator. This design facilitates energy harvesting from both waterdrops and biomechanics. The CY-TENG is fabricated using fluorinated ethylene propylene ultrafine heat-shrink tubes combined with stainless-steel yarns, ensuring its flexibility, durability, and weavability. Such attributes underscore its potential as a dual-function WEH.

DOI： 10.35848/1882-0786/ad1f06

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Scopus

Influence of Insertion Position of a LiF Buffer Layer on Passivation Performance of Crystalline Si/SiOy/TiOx/Al Heterostructures 査読有り国際誌

Shohei Fukaya, Kazuhiro Gotoh, Takuya Matsui, Hitoshi Sai, Yasuyoshi Kurokawa, Noritaka Usami

Proc. 50th IEEE Photovoltaic Specialists Conference 頁： 1 - 3 2023年12月

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method 査読有り国際誌

Proc. 50th IEEE Photovoltaic Specialists Conference 頁： 1 - 3 2023年12月

Free-Standing Electrode and Fixed Surface Tiny Electrode Implemented Tiboelectric Nanogenerator with High Instantaneous Current 査読有り

Wang, HT; Kurokawa, Y; Wang, J; Cai, WT; Zhang, JH; Kato, S; Usami, N

SMALL 頁： e2308531 2023年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Small

Conventional triboelectric nanogenerators (TENGs) face challenges pertaining to low output current density at low working frequencies and high internal impedance. While strategies, such as surface modification to enhance surface charge density, permittivity regulation of materials, and circuit management, have partially mitigated these issues. However, they have also resulted in increased complexity in the fabrication process. Therefore, there is an urgent demand for a universal and simplified approach to address these challenges. To fulfill this need, this work presents a free-standing electrode and fixed surface tiny electrode implemented triboelectric nanogenerator (FFI-TENG). It is fabricated by a straightforward yet effective method: introducing a tiny electrode onto the surface of the tribo-negative material. This approach yields substantial enhancements in performance, notably a more than tenfold increase in output current density, a reduction in effective working frequencies, and a decrease in matching resistance as compared to vertical contact-separation TENGs (CS-TENGs) or single-electrode TENGs (SE-TENGs). Simultaneously, a comprehensive examination and proposition regarding the operational mechanism of FFI-TENG, highlighting its extensive applicability are also offered. Significantly, FFI-TENG excels in mechanical energy harvesting even under ultra-low working frequencies (0.1 Hz), outperforming similar contact-separation models. This innovation positions it as a practical and efficient solution for the development of low-entropy energy harvesters.

DOI： 10.1002/smll.202308531

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PubMed

The effect of room-temperature plastic deformation in darkness on the photoluminescence properties of ZnS 査読有り

Ogura, Y; Nakamura, A; Kameyama, T; Kurokawa, Y; Tochigi, E; Shibata, N; Torimoto, T; Hoshino, S; Yokoi, T; Matsunaga, K

JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 巻 ( 4 ) 頁： 2040 - 2047 2023年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of the American Ceramic Society

Inorganic semiconductors have been considered to be brittle at room temperature generally, but recently zinc sulfide (ZnS), a II–VI compound semiconductor, was found to exhibit extraordinarily large plasticity even at room temperature if it was deformed in darkness. Room-temperature plastic deformation can achieve high density of glide dislocations in the crystal without significantly changing the point defect structure, and these dislocations themselves have a potential to provide unique functional properties different from those of the bulk. In this study, therefore, undoped ZnS crystals were plastically deformed at room temperature in darkness to generate only a large number of dislocations, and the changes in luminescence properties resulting from this process were investigated for the first time. As a result, we found that ZnS deformed in darkness exhibits characteristic photoluminescence and persistent luminescence emissions with a visible green color. SEM-CL analyses also identified the emissions from the dislocations. Theoretical calculations indicated that individual dislocations in ZnS have the ability to trap photo-excited carriers. Such changes in luminescence properties due to room temperature plastic deformation in darkness can be considered to originate from dislocations rather than point defects. In other words, the dislocations themselves serve as the significant recombination centers, realizing visible light emission.

DOI： 10.1111/jace.19564

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Improvement of passivation performance of silicon nanocrystal/silicon oxide compound layer by two-step hydrogen plasma treatment 査読有り

M. Matsumi, K. Gotoh, M. Wilde, Y. Kurokawa, K. Fukutani and N. Usami

Solar Energy Materials and Solar Cells 262 巻頁： 112538 2023年10月

Nanoscale Size Control of Si Pyramid Texture for Perovskite/Si Tandem Solar Cells Enabling Solution-Based Perovskite Top-Cell Fabrication and Improved Si Bottom-Cell Response 査読有り

Li, YQ; Sai, H; Mcdonald, C; Xu, ZH; Kurokawa, Y; Usami, N; Matsui, T

ADVANCED MATERIALS INTERFACES 10 巻 ( 35 ) 2023年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Advanced Materials Interfaces

A monolithic perovskite/silicon tandem solar cell architecture is employed to surpass the single-junction efficiency limit. Recently, there is an increasing need for the double-sided textures in the Si bottom cell to be compatible with the solution-processed perovskite top cell from an industrial perspective. Herein, a silver-assisted alkaline etching method is applied to fabricate nanoscale Si pyramid textures, and the influence of varying pyramid size (400–900 nm) on the interface morphology and the performance of perovskite/Si tandem cells is investigated. It is demonstrated that electrical shunting starts to increase, and the open-circuit voltage (VOC) decreases when the texture size exceeds the perovskite thickness (~500nm) due to the non-uniform top-cell formation on a rough Si surface. However, when the texture size is reduced to 400–500 nm, all spin-coated perovskite top-cell component layers exhibit an even form over the nanopyramid Si, resulting in a high VOC and an enhanced Si bottom cell current (≈1.0 mA cm−2) due to the suppressed reflectance at the top/bottom cell interface without using optical couplers. The double-sided nanopyramid Si texture offers opportunities to increase tandem cell efficiency while reducing its production cost compared with the commonly used single-sided textured Si.

DOI： 10.1002/admi.202300504

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Impact of B<inf>2</inf>H<inf>6</inf>plasma treatment on contact resistivity in silicon heterojunction solar cells 査読有り

Gotoh K., Ozaki R., Morimura M., Tanaka A., Iseki Y., Nakamura K., Muramatsu K., Kurokawa Y., Ohshita Y., Usami N.

Japanese Journal of Applied Physics 62 巻 ( SK ) 2023年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We investigated the effect of the B2H6 plasma treatment on p-type hydrogenated amorphous silicon (p-a-Si:H) surfaces for high-performance silicon heterojunction (SHJ) solar cells. Secondary ion mass spectroscopy measurements revealed that the boron concentration at the p-a-Si:H surface is increased by employing the B2H6 plasma treatment. Furthermore, specific contact resistance is decreased by about one-third after the B2H6 plasma treatment. No degradation of passivation performance is induced by the B2H6 plasma treatment. The power conversion efficiency of the SHJ solar cells with the B2H6 plasma treatment is improved by the increase in fill factor (FF) due to decreased series resistance and increased shunt resistance. From numerical simulations, the upward band bending is enhanced at the heterointerface between transparent conductive oxide (TCO) and p-a-Si:H by the B2H6 plasma treatment, which is responsible for the improved FF owing to facilitated tunneling holes from c-Si to p-a-Si:H layers and the TCO/p-a-Si:H heterointerface.

DOI： 10.35848/1347-4065/acc953

Scopus

Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiO <inf>x</inf> /Si heterostructures by photoluminescence imaging: impact of metallization on passivation performance 査読有り

Fukaya S., Gotoh K., Matsui T., Sai H., Kurokawa Y., Usami N.

Japanese Journal of Applied Physics 62 巻 ( SK ) 2023年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The degradation of surface passivation performance by metallization is a challenge in realizing highly efficient crystalline Si solar cells that use novel carrier-selective contacts. Here, we report on a simple method to study the effect of metallization on passivation of titanium oxide (TiOx)/Si heterostructures. We investigated the relationship between the implied open-circuit voltage (iV OC) and the photoluminescence (PL) intensity imaging of solar cell precursors before metallization. Based on the relationship obtained, the change of the iV OC before and after metallization on the TiOx was evaluated quantitatively. The results showed that the iV OC predicted by the PL measurement decreases by 23-104 mV after metal deposition and shows a good agreement with the measured V OC in the finished solar cells. These results demonstrate that the iV OC evaluation by PL measurement provides a good prediction of the V OC after metallization, which is useful in analyzing the passivation degradation induced by metallization.

DOI： 10.35848/1347-4065/acc813

Scopus

Fabrication of light trapping structures specialized for near-infrared light by nanoimprinting for the application to thin crystalline silicon solar cells 査読有り

Kimata Yuto, Gotoh Kazuhiro, Miyamoto Satoru, Kato Shinya, Kurokawa Yasuyoshi, Usami Noritaka

DISCOVER NANO 18 巻 ( 1 ) 頁： 72 2023年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Discover Nano

Vehicle-integrated photovoltaics (VIPV) are gaining attention to realize a decarbonized society in the future, and the specifications for solar cells used in VIPV are predicated on a low cost, high efficiency, and the ability to be applied to curved surfaces. One way to meet these requirements is to make the silicon substrate thinner. However, thinner substrates result in lower near-infrared light absorption and lower efficiency. To increase light absorption, light trapping structures (LTSs) can be implemented. However, conventional alkali etched pyramid textures are not specialized for near-infrared light and are insufficient to improve near-infrared light absorption. Therefore, in this study, as an alternative to alkaline etching, we employed a nanoimprinting method that can easily fabricate submicron-sized LTSs on solar cells over a large area. In addition, as a master mold fabrication method with submicron-sized patterns, silica colloidal lithography was adopted. As a result, by controlling silica coverage, diameter of silica particles (D), and etching time (t et), the density, height, and size of LTSs could be controlled. At the silica coverage of 40%, D = 800 nm, and t et = 5 min, the reduction of reflectance below 65% at 1100 nm and the theoretical short-circuit current gain of 1.55 mA/cm2 was achieved.

DOI： 10.1186/s11671-023-03840-6

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PubMed

Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer 査読有り

Japanese Journal of Applied Physics 62 巻 ( SC ) 頁： SC1032 2023年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

DOI： 10.35848/1347-4065/acaca7

Study on the Etching Characteristics and Thermal Conductivity of Porous Silicon Nanowire Arrays Using Highly Doped Silicon 査読有り

Li Haibin, Kato Shinya, Kurokawa Yasuyoshi, Soga Tetsuo

e-Journal of Surface Science and Nanotechnology advpub 巻 ( 0 ) 2022年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Japan Society of Vacuum and Surface Science

Silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching (MACE) of highly doped silicon are promising thermoelectric materials because of their high conductivity and porosity. However, it is difficult to fabricate long SiNWs using highly doped silicon with doping concentrations higher than 1019 cm−3. In this study, we fabricated SiNWs up to 44 μm in length using highly doped silicon with a doping concentration of 1020 cm−3, analyzed the etching characteristics in SiNWs length and the morphology, and investigated the thermal conductivity. The phenomenon of continuous loss of SiNWs was found, which is a unique phenomenon indicating the presence of loss SiNWs throughout the whole etching process and difficulty of forming long SiNWs with highly doped silicon. On the other hand, the thermal conductivity results showed that the lowest thermal conductivity of the samples reached 2.98 W m−1 K−1, and the mean diameters of pores in these samples were 5−10 nm. Thus, the SiNWs using highly doped silicon is a potential material for thermoelectric device.

DOI： 10.1380/ejssnt.2023-006

CiNii Research

A novel self-separating silicon nanowire thin film and application in lithium-ion batteries 査読有り

Li H., Kato S., Ishii Y., Kurokawa Y., Soga T.

Nano Express 3 巻 ( 4 ) 2022年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nano Express

Nano silicon structures are important materials for modern electronic devices and have been widely researched with regard to photoelectricity, thermoelectricity, and lithium-ion batteries. However, since the nano silicon structures fabricated by conventional methods cannot be separated from silicon substrates, reuse of the substrate is restricted. Here, we propose a simple fabrication method to separate the nano silicon structures from the silicon substrates, which allows the reuse of the substrates. The fabrication was processed at room temperature, which allows large-area fabrication and is not restricted by the substrate thickness. Honeycomb structures of different length scales observed on both the nano silicon structure and the substrate suggest that the separation occurred due to the amplification of the silicon crystal defects. The nano silicon structures comprised porous silicon with an excellent specific surface area of 480 m2 g−1 and a mean pore diameter of 5.7 nm. Moreover, the nano silicon structures show good potential as anode materials for lithium-ion batteries wherein the measured reversible capacity was 1,966 mAh g−1 after 100 cycles. Based on the proposed method and morphological characteristics, the fabricated nano silicon structures can be considered a low-cost material with suitable applications in the energy field.

DOI： 10.1088/2632-959X/acb807

Scopus

Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer 査読有り国際誌

Haitao Wang, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Shinya Kato, Shigeru Yamada, Takashi Itoh, Noritaka Usami

Ext. Abstr. 2022 International Conference on Solid State Devices and Materals 頁： 145 - 146 2022年9月

Preparation and thermoelectric characterization of boron-doped silicon nanocrystals/silicon oxide multilayers 査読有り国際誌

Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami, Yasuyoshi Kurokawa

Ext. Abstr. 2022 International Conference on Solid State Devices and Materals 頁： 147 - 148 2022年9月

Nanopyramid Texture Formation by One-Step Ag-Assisted Solution Process for High-Efficiency Monocrystalline Si Solar Cells 査読有り

Li Y., Sai H., Matsui T., Xu Z., Nguyen V.H., Kurokawa Y., Usami N.

Solar RRL 2022年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Solar RRL

In monocrystalline Si solar cells, pyramidal surface textures with the size of a few micrometers (micropyramids) are commonly applied for light in-coupling and trapping. Recently, there is a growing need to reduce the size of pyramids below 1 μm. Herein, an original method to fabricate nanometer-sized pyramids (nanopyramids) featuring an average size of ≈500 nm or even smaller by using a simple one-step Ag-assisted solution process is proposed. The texture size can be controlled by the concentration of AgNO3 in the alkaline etching solution where the generated Ag nanoparticles act as an etching mask as well as promoting the detachment of H2 bubbles from the reacting Si surface. This process enables the formation of uniformly distributed Si nanopyramids with a lower reflectance below 10% and a smaller etching margin less than 1.7 μm compared with the conventional micropyramids. Silicon heterojunction solar cells employing Si nanopyramids outperform those with the conventional micropyramids owing to the reduced optical reflectance while preserving excellent surface passivation and carrier transport properties. These results demonstrate the advantages of our method and the high potential of Si nanopyramids for various applications such as thin crystalline Si solar cells and perovskite/Si tandem solar cells.

DOI： 10.1002/solr.202200707

Scopus

Influence of post-oxidizing treatment on passivation performance on the spin-coated titanium oxide films on crystalline silicon 査読有り

Hao Luo, Van Hoang Nguyen, Kazuhiro Gotoh, Saya Ajito, Tomohiko Hojo, Yasuyoshi Kurokawa, Eiji Akiyama and Noritaka Usami

Thin Solid Films 764 巻頁： 139597 2022年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Solar RRL

DOI： 10.1016/j.tsf.2022.139597

Enhancement of reflectance reduction of solar cells by a silicon nanoparticle layer on a textured silicon substrate 査読有り

Shinya Kato, Yasuhoshi Kurakawa, Tetsuo Soga

Results in Optics 9 巻頁： 100296 2022年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Solar RRL

DOI： 10.1016/j.rio.2022.100296

Fabrication of Silicon Heterojunction Solar Cells with Light Trapping Structures Specialized for Near-Infrared Light by Nanoimprinting 査読有り国際誌

Y. Kimata, K. Gotoh, S. Miyamoto, Y. Kurokawa, N. Usami

Proc. 8th World Conference on Photovoltaic Energy Conversion 頁： 230 - 233 2022年9月

Improvement of Passivation Performance of Silicon Nanocrystal/Silicon Oxide Compound Layer by Hydrogen Plasma Treatment 査読有り国際誌

M. Matsumi, K. Gotoh, M. Wilde, Y. Kurokawa, K. Fukutani, N. Usami

Proc. 8th World Conference on Photovoltaic Energy Conversion 頁： 402 - 405 2022年9月

Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2 査読有り

Fujiwara Michinobu, Takahashi Kazuma, Nakagawa Yoshihiko, Gotoh Kazuhiro, Itoh Takashi, Kurokawa Yasuyoshi, Usami Noritaka

AIP ADVANCES 12 巻 ( 4 ) 2022年4月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AIP Advances

The effect of low growth rate deposition (LGD) of BaSi2 on the film quality and performance of silicon heterojunction solar cells was investigated. The total thickness of the BaSi2 layer decreased with increasing LGD duration (tLGD). Analysis using Raman spectroscopy indicated that an amorphous Si (a-Si) phase existed on the surface of the BaSi2 layer. The a-Si on the surface was converted into BaSi2 by post-annealing owing to the diffusion of Ba and Si atoms. X-ray diffraction analysis revealed that LGD improved the rate of a-axis orientation and crystallinity. Post-annealing was also observed to have significantly improved these structural properties. Furthermore, the solar cell performance was observed to be strongly dependent on tLGD, and the highest conversion efficiency of 10.62% was achieved by the p-BaSi2/n-c-Si heterojunction solar cells at a tLGD of 6 min. The improved structure and solar cell properties are attributed to improved atom rearrangement during LGD.

DOI： 10.1063/5.0083812

Web of Science

Scopus

Fabrication of BaSi<inf>2</inf>homojunction diodes on Nb-doped TiO<inf>2</inf>coated glass substrates by aluminum-induced crystallization and two-step evaporation method 査読有り

Kurokawa Y., Yoshino T., Gotoh K., Miyamoto S., Usami N.

Japanese Journal of Applied Physics 61 巻 ( SC ) 2022年2月

担当区分：筆頭著者,　責任著者記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

BaSi2 homojunction diodes on Nb-doped TiO2 (TiO2:Nb) coated glass substrates were fabricated using aluminum-induced crystallization (AIC) and a two-step evaporation method. From Raman scattering spectra, the growth of BaSi2 on TiO2:Nb was confirmed when the thickness of poly-Si grown by AIC (AIC-Si) was more than 150 nm. The partial formation of BaSi2 diodes was confirmed from the samples prepared at temperature during AIC TAIC = 475 °C-525 °C. The long-wavelength edge of photoresponsivity of the diodes was located around 950 nm, which corresponds to the bandgap of BaSi2 of 1.3 eV, suggesting that this photocurrent is derived from BaSi2 thin films. At TAIC = 500 °C, the maximum value of photoresponsivity was obtained. Since the largest grains in AIC-Si were also obtained at TAIC = 500 °C, these results suggest that larger grain of AIC-Si leads to the improvement of the quality of BaSi2 thin films themselves and the performance of BaSi2 diodes.

DOI： 10.35848/1347-4065/ac4077

Scopus

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells 査読有り

Tsubata R., Gotoh K., Matsumi M., Wilde M., Inoue T., Kurokawa Y., Fukutani K., Usami N.

ACS Applied Nano Materials 2022年1月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：ACS Applied Nano Materials

This study describes the fabrication of silicon nanocrystals (Si NCs) in silicon oxide layers, which led to high-performance passivation and enhanced carrier transport in crystalline silicon (c-Si) solar cells. These Si NCs comprised nanocrystalline transport pathways in ultrathin dielectrics for reinforced passivating contact structures (NAnocrystalline Transport path in Ultrathin dielectrics for Reinforcing (NATURE) contacts). Si NCs were formed in silicon oxide layers by depositing hydrogenated amorphous silicon oxide (a-SiOx:H) with different oxygen concentrations, followed by postdeposition annealing (PDA). Based on microscopic images, the silicon oxide layer was maintained after PDA, and the Si NCs were formed in the silicon oxide matrix, leading to a relatively low recombination current (178.8 fA/cm2) compared with simple a-SiOx:H layer structures. Furthermore, the contact resistivity for the NATURE contact was 13.1 mΩ·cm2, which was comparable to that of a single a-SiOx:H layer with a low oxygen concentration. The developed NATURE contact structure expands the design flexibility scope for various functional devices containing a passivation contact layer. It allows for the production of c-Si solar cells with passivating contacts using thicker dielectric layers for improved reliability and long-term stability.

DOI： 10.1021/acsanm.1c03355

Scopus

Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces 査読有り

Gotoh K., Wilde M., Ogura S., Kurokawa Y., Fukutani K., Usami N.

Applied Surface Science 567 巻 2021年11月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Surface Science

We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.

DOI： 10.1016/j.apsusc.2021.150799

Scopus

Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method 査読有り

Nakagawa Yoshihiko, Takahashi Kazuma, Fujiwara Michinobu, Hara Kosuke O., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Suemasu Takashi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 10 ) 2021年9月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We have fabricated p-type BaSi2 (p-BaSi2)/n-type crystalline Si (n-c-Si) heterojunction solar cells using thermal evaporation. To control the defect around the heterointerface, samples were fabricated by two methods using different current profiles during evaporation. The one-step method was designed to avoid supplying Ba-rich vapor, and the two-step method was designed to intentionally introduce Ba-rich vapor at the first step. Deep-level transient spectroscopy measurements revealed that defect densities in the n-c-Si side were almost the same for both samples. Open-circuit voltage (V oc) was successfully improved from 319 to 463 mV by the two-step method. This may be due to the increase of carrier density in p-BaSi2 prepared using a two-step method. As a result of optimization, the conversion efficiency of 6.23% was achieved by the heterojunction solar cells.

DOI： 10.35848/1347-4065/ac23ec

Web of Science

Scopus

Application of Bayesian optimization for high-performance TiO<inf>x</inf>/SiO<inf>y</inf>/c-Si passivating contact 査読有り

Miyagawa S., Gotoh K., Kutsukake K., Kurokawa Y., Usami N.

Solar Energy Materials and Solar Cells 230 巻 2021年9月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Solar Energy Materials and Solar Cells

We report on the application of Bayesian optimization (BO), which could accelerate the time-intensive process optimization of many parameters, to fabrication of the high-performance titanium oxide/silicon oxide/crystalline silicon passivating contact. The process contains pre-deposition treatment to form SiOy interlayer, atomic layer deposition (ALD) of TiOx, and hydrogen plasma treatment (HPT) as post-process. We attempted to optimize seven parameters for ALD and HPT by dealing with samples treated by three kinds of chemical solutions in the same batch. This permits to perform BO for each structure at the same time and determine the superior pre-deposition treatment. Consequently, carrier selectivity S10 estimated by independent measurements of the saturation current density and contact resistance was significantly improved by BO of only 12 cycles and 10 initial random experiments. These results certify that BO could efficiently provide experimental conditions in multidimensional parameter space although we need to consider the impact of the metallization process on the passivation performance.

DOI： 10.1016/j.solmat.2021.111251

Scopus

Fabrication of BaSi2 homojunction diodes on glass substrates by aluminum induced crystallization and two-step evaporation method 査読有り国際誌

Takamasa Yoshino, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Satoru Miyamoto, and Noritaka Usami

Ext. Abstr. 2021 International Conference on Solid State Devices and Materals 頁： 341 - 342 2021年9月

Study on the Morphology of Silicon Nanowire Arrays by Using Highly Doped Silicon 査読有り国際誌

Haibin Li, Shinya Kato, Yasuyoshi Kurokawa, Tetsuo Soga

Ext. Abstr. 2021 International Conference on Solid State Devices and Materals 頁： 311 - 312 2021年9月

Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers 査読有り

Nakagawa Y., Gotoh K., Inoue T., Kurokawa Y., Usami N.

Physica Status Solidi (A) Applications and Materials Science 2021年7月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Physica Status Solidi (A) Applications and Materials Science

The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open-circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer.

DOI： 10.1002/pssa.202100296

Scopus

Fabrication of silicon nanowire metal-oxide-semiconductor capacitors with al2o3/tio2/al2o3 stacked dielectric films for the application to energy storage devices 査読有り

Nezasa R., Gotoh K., Kato S., Miyamoto S., Usami N., Kurokawa Y.

Energies 14 巻 ( 15 ) 2021年7月

担当区分：最終著者,　責任著者記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Energies

Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al2O3/TiO2/Al2O3 (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and atomic layer deposition (ALD). High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images revealed that SiNWs were conformally coated with ATA although the cross-sectional shapes of MACE-SiNWs were non-uniform and sharp spikes can be seen locally. The dielectric capacitance density of 5.9 μF/cm2 at V = −4 V of the perfect accumula-tion region was achieved due to the combination of the large surface area of the SiNW array and the high dielectric constant of ATA. The capacitance changed exponentially with the voltage at V < −4.3 V and the capacitance of 84 μF/cm2 was successfully achieved at V = −10 V. It was revealed that not only 3D structure and high-k material but also local nanostructure of SiNWs and stacked dielectric layers could contribute to the considerable high capacitance.

DOI： 10.3390/en14154538

Scopus

Realization of the Crystalline Silicon Solar Cell Using Nanocrystalline Transport Path in Ultra-thin Dielectrics for Reinforced Passivating Contact 査読有り

Tsubata R., Gotoh K., Inoue T., Kurokawa Y., Usami N.

Conference Record of the IEEE Photovoltaic Specialists Conference 頁： 908 - 911 2021年6月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Conference Record of the IEEE Photovoltaic Specialists Conference

We apply NAnocrystalline Transport path in Ultra-thin dielectrics for Reinforced passivating contact (NATURE contact) to crystalline silicon solar cells for simultaneous achievement of passivation and carrier extraction. The Si nanocrystals are formed in silicon oxide by deposition of hydrogenated amorphous silicon oxide with different oxygen concentration and subsequent annealing. NATURE contact with total layer thickness of 8 nm exhibits reasonably good passivation performance. Furthermore, we demonstrate that NATURE contact can be successfully implemented to the both sides of crystalline silicon solar cells. NATURE contact, which permits flexible structural and chemical design of a passivation contact layer, will open a possibility for various functional devices.

DOI： 10.1109/PVSC43889.2021.9519096

Scopus

Versatile fabrication of a passivation material, solute PEDOT:PSS, for a c-Si substrate using alcoholic solvents 査読有り国際共著国際誌

Sustainable Energy and Fuels 5 巻 ( 3 ) 頁： 666 - 670 2021年2月

Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry 査読有り国際誌

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 頁： SBBF04 2021年1月

The impact of highly excessive PbI2 on the correlation of MAPbI(3) perovskite morphology and carrier lifetimes 査読有り国際共著国際誌

JOURNAL OF MATERIALS CHEMISTRY C 8 巻 ( 41 ) 頁： 14481 - 14489 2020年11月

Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers 査読有り国際誌

CURRENT APPLIED PHYSICS 21 巻頁： 36 - 42 2020年10月

Effect of Hydrogen Plasma Treatment on Silicon Quantum Dot Multilayers Using Amorphous SiOx 査読有り国際誌

R. Akaishi, K. Gotoh, S. Kato, N. Usami, Y. Kurokawa

Proc. 37th European Photovoltaic Solar Energy Conference and Exhibition 頁： 83 - 86 2020年9月

Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask 査読有り国際共著国際誌

Nguyen V. H, Novikov A, Shaleev M, Yurasov D, Semma M, Gotoh K, Kurokawa Y, Usami N

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 114 巻頁： 105065 2020年8月

Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts 査読有り国際誌

Proc. 47th IEEE Photovoltaic Specialists Conference 2020-June 巻頁： 0969 - 0972 2020年6月

Work function of indium oxide thin films on p-type hydrogenated amorphous silicon 査読有り国際誌

Proc. 47th IEEE Photovoltaic Specialists Conference 2020-June 巻頁： 0124 - 0127 2020年6月

Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction 査読有り国際誌

Semma Masanori, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

AIP ADVANCES 10 巻 ( 6 ) 頁： 065008 2020年6月

Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells 査読有り国際誌

Kimura Yuki, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

APPLIED PHYSICS EXPRESS 13 巻 ( 5 ) 頁： 051002 2020年5月

Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality 査読有り国際誌

Horiba Issei, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SF ) 頁： SFFB03 2020年4月

Effects of evaporation vapor composition and post-annealing conditions on carrier density of undoped BaSi2 evaporated films 査読有り国際誌

Kimura Yuki, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SF ) 頁： SFFA05 2020年4月

Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation 査読有り国際誌

Yoshino Takamasa, Nakagawa Yoshihiko, Kimura Yuki, Fujiwara Michinobu, Kurokawa Yasuyoshi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SF ) 頁： SFFA10 2020年4月

Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition 査読有り国際誌

Miyagawa Shinsuke, Gotoh Kazuhiro, Ogura Shohei, Wilde Markus, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

Journal of Vacuum Science & Technology A 38 巻 ( 2 ) 頁： 022410 2020年3月

Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts 査読有り国際誌

Nakagawa Yuta, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

Journal of Vacuum Science & Technology A 38 巻 ( 2 ) 頁： 022415 2020年3月

Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures 査読有り国際誌

Gotoh Kazuhiro, Mochizuki Takeya, Kurokawa Yasuyoshi, Usami Noritaka

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 216 巻 ( 22 ) 頁： 1900495 2019年11月

Hydrogen concentration at a-Si:H/c-Si heterointerfaces - The impact of deposition temperature on passivation performance 査読有り国際誌

Kazuhiro Gotoh Markus Wilde Shinya Kato Shohei Ogura Yasuyoshi Kurokawa Katsuyuki Fukutani Noritaka Usami

AIP Advances 9 巻 ( 7 ) 頁： 075115 2019年7月

Evidence of solute PEDOT:PSS as an efficient passivation material for fabrication of hybrid c-Si solar cells 査読有り国際誌

Van Hoang Nguyen, Kato Shinya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

SUSTAINABLE ENERGY & FUELS 3 巻 ( 6 ) 頁： 1448 - 1454 2019年6月

Electrical properties of TiO TiO<inf>x</inf>bilayer prepared by atomic layer deposition at different temperatures 査読有り国際誌

Proc. 46th IEEE Photovoltaic Specialists Conference 2 巻頁： 3574 - 3576 2019年6月

Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures 査読有り国際共著国際誌

Ota Yushi, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 4 ) 頁： 045505 2019年4月

Epitaxial growth of SiGe on Si substrate by printing and firing of Al–Ge mixed paste 査読有り国際誌

S. Fukami, Y. Nakagawa, M. F. Hainey, Jr., K. Gotoh, Y. Kurokawa, M. Nakahara, M. Dhamrin, and N. Usami

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SG ) 頁： SGGF09 2019年3月

Silicon Nanowire Heterojunction Solar Cells with an Al2O3 Passivation Film Fabricated by Atomic Layer Deposition 査読有り国際誌

Kato Shinya, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Soga Tetsuo

NANOSCALE RESEARCH LETTERS 14 巻 ( 1 ) 頁： 99 2019年3月

Fabrication of a Silicon Nanowire Solar Cell on a Silicon-on-Insulator Substrate 査読有り国際誌

Kato Shinya, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Soga Tetsuo

APPLIED SCIENCES-BASEL 9 巻 ( 5 ) 頁： 818 2019年3月

Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials 査読有り国際誌

R. Nezasa, Y. Kurokawa, N Usami

Proc. 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) 頁： 1 - 4 2019年1月

Improvement of the Electrical Property of Silicon Nanoparticle Films 査読有り国際誌

Shinya Kato, Shinsuke Kumagai, Caixeta Bonfim Gabriel, Eiji Ichihara, Naoki Kishi, Tetsuo Soga

2018 IEEE 7th WCPEC Proceeding 頁： 0333 - 0337 2018年11月

Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases 査読有り国際誌

Ryushiro Akaishi, Kouhei Kitazawa, Satoshi Ono, Kazuhiro Gotoh, Eiji Ichihara, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

2018 IEEE 7th WCPEC Proceeding 頁： 2852 - 2856 2018年11月

Local Structure of High Performance TiOxPassivating Layer Revealed by Electron Energy Loss Spectroscopy 査読有り国際誌

T. Mochizuki, K. Gotoh, A. Ohta, Y. Kurokawa, S. Miyazaki, T. Yamamoto, N. Usami

2018 IEEE 7th WCPEC Proceeding 頁： 3896 - 3899 2018年11月

Improving intrinsic silicon nanoparticle film by press treatment for use in p-i-n solar cells 査読有り国際誌

Eiji Ichihara, Shinya Kato, Ryushiro Akaishi, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Naoki Kishi, Tetsuo Soga

2018 IEEE 7th WCPEC Proceeding 頁： 317 - 320 2018年11月

Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell 査読有り国際誌

Atsushi Hombe, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Noritaka Usami

2018 IEEE 7th WCPEC Proceeding 頁： 3097 - 3101 2018年11月

Structural, Optical and Electrical Characterization of Heterojunction Rib-Si Solar Cells 査読有り国際誌

Makoto Konagai, Rei Kondo, Toshiki Otani, Satomi Takahashi, Kentarou Sawano, Yukimi Ichikawa, Kazuyoshi Nakada, Yasuyoshi Kurokawa

2018 IEEE 7th WCPEC Proceeding - 巻 ( - ) 頁： - - - 2018年11月

Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates 査読有り国際誌

Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka

THIN SOLID FILMS 663 巻頁： 14 - 20 2018年10月

Activation mechanism of TiOx passivating layer on crystalline Si 査読有り国際誌

Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

APPLIED PHYSICS EXPRESS 11 巻 ( 10 ) 頁： 102301 2018年10月

Stacks of a-SiOx:H/a-Si:H Passivation Layer for Low Parasitic Absorption and High Passivation in Silicon Heterojunction Solar Cells 査読有り国際誌

K. Gotoh, M. Cui, R. Akaishi, Y. Kurokawa, N. Usami

Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition 頁： 636 - 638 2018年9月

Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells 査読有り国際誌

Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 頁： 08RB21 2018年8月

Influence of barrier layer's height on the performance of Si quantum dot solar cells 査読有り国際誌

Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 頁： 08RF08 2018年8月

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks 査読有り国際共著国際誌

Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 頁： 08RB04 2018年8月

Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks 査読有り国際共著国際誌

Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 頁： 08RF09 2018年8月

Solid State Devices and Materials FOREWORD 査読有り

Kageshima Hiroyuki, Hosoi Takuji, Iwamoto Satoshi, Arie Takayuki, Fujino Masahisa, Fukuzaki Yuzo, Harada Syunta, Ikegami Masashi, Iwamuro Noriyuki, Johguchi Koh, Kakushima Kuniyuki, Kanaya Haruichi, Kikuchi Akihiko, Kinoshita Kentaro, Kuroda Rihito, Kurokawa Yasuyoshi, Maehashi Kenzo, Maekawa Keiichi, Makino Toshiharu, Matsushima Toshinori, Miyata Toshitaka, Morioka Hiroshi, Morioka Hiroshi, Murugesan Mariappan, Nagashio Kosuke, Nagata Takahiro, Nakatsuka Osamu, Nishiyama Nobuhiko, Oiwa Akira, Okada Hiroyuki, Ono Teruo, Sakamoto Toshitsugu, Sakata Toshiya, Shirao Mizuki, Sukegawa Kazuo, Suzuki Toshikazu, Suzuki Hidetoshi, Taima Tetsuya, Tanaka Tetsu, Tatsuoka Kohichi, Tawara Takehiko, Tsuda Kunio, Yamamoto Kazuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon 国際共著国際誌

Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 75 巻頁： 143 - 148 2018年3月

Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films 査読有り国際誌

Yasuyoshi Kurokawa, Ryota Nezasa, Shinya Kato, Hisashi Miyazaki, Isao Takahashi, Noritaka Usami

MRS Advances 3 巻 ( 25 ) 頁： 1419 - 1426 2018年

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Materials Research Society

To improve conversion efficiency of silicon nanowire (SiNW) solar cells, it is very important to reduce the surface recombination rate on the surface of SiNWs, since SiNWs have a large surface area. We tried to cover SiNWs with aluminum oxide (Al2O3) and titanium oxide (TiO2) by atomic layer deposition (ALD), since Al2O3 grown by ALD provides an excellent level of surface passivation on silicon wafers and TiO2 has a higher refractive index than Al2O3, leading to the reduction of surface reflectance. The effective minority carrier lifetime in SiNW arrays embedded in a TiO2/Al2O3 stack layer of 94 μsec was obtained, which was comparable to an Al2O3 single layer. The surface reflectance of SiNW solar cells was drastically decreased below around 5% in all of the wavelength range using the Al2O3/TiO2/Al2O3 stack layer. Heterojunction SiNW solar cells with the structure of ITO/p-type hydrogenated amorphous silicon (a-Si:H)/n-type SiNWs embedded in Al2O3 and TiO2 stack layer for passivation/n-type a-Si:H/back electrode was fabricated, and a typical rectifying property and open-circuit voltage of 356 mV were successfully obtained.

DOI： 10.1557/adv.2018.40

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Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications 査読有り国際誌

Kazuma Takahashi, Yoshihiko Nakagawa, Kosuke O. Hara, Isao Takahashi, Yasuyoshi Kurokawa, Noritaka Usami

MRS Advances 3 巻 ( 25 ) 頁： 1435 - 1442 2018年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Materials Research Society

A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

DOI： 10.1557/adv.2018.191

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EFFECT OF NOVEL SUB-MICRON STRUCTURE FABRICATED ONTO CRYSTALLINE SILICON ON OPTICAL PROPERITES AND MINORITY CARRIER LIFETIME 査読有り国際誌

Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Gotoh Kazuhiro, Usami Noritaka

Proc. Grand Renewable Energy 2018 1 巻 ( 0 ) 2018年

Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells 査読有り国際共著国際誌

N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorohodov, M. V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami

Semiconductors 51 巻 ( 12 ) 頁： 1542 - 1546 2017年12月

Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts 査読有り国際誌

K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

Energy Procedia 124 巻頁： 598 - 603 2017年9月

Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source 査読有り国際誌

Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

THIN SOLID FILMS 636 巻頁： 546 - 551 2017年8月

Peeling process of thin-film solar cells using graphene layers 査読有り国際誌

R. Ishikawa, Y. Kurokawa, S. Miyajima, and M. Konagai

Applied Physics Express 10 巻頁： 082301 2017年7月

Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures 査読有り国際誌

Yasuyoshi Kurokawa, Osamu Aonuma, Takeshi Tayagaki, Isao Takahashi and Noritaka Usami

Jpn. J. Appl. Phys. 56 巻 ( 8S2 ) 頁： 08MA02 2017年7月

Postannealing effects on undoped BaSi<inf>2</inf>evaporated films grown on Si substrates 査読有り国際共著国際誌

Takamichi Suhara, Koichi Murata, Aryan Navabi, Kosuke O. Hara, Yoshihiko Nakagawa, Cham Thi Trinh, Yasuyoshi Kurokawa, Takashi Suemasu, Kang L. Wang, Noritaka Usami

Japanese Journal of Applied Physics 56 巻 ( 5S1 ) 頁： 05DB05 2017年5月

Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties 査読有り国際誌

Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 5 ) 頁： 05DB06 2017年5月

Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells 査読有り国際誌

K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami

Jpn. J. Appl. Phys. 56 巻頁： 05DB04 2017年4月

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films 査読有り国際誌

S. Kato, T. Yamazaki, Y. Kurokawa, S. Miyajima, and M. Konagai

Nanoscale Research Letters 12 巻頁： 242 2017年3月

Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films 査読有り国際誌

K.O.Hara, C.T.Trinh, Y.Kurokawa, K.Arimoto,J.Yamanaka, K.Nakagawa, and N.Usami

Jpn. J. Appl. Phys. 56 巻頁： 04CS07 2017年3月

Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells 査読有り国際誌

T.Tayagaki, D. Furuta, O. Aonuma, I. Takahashi, Y. Hoshi, Y. Kurokawa, and N.Usami

Jpn. J. Appl. Phys. 56 巻頁： 04CS01 2017年1月

Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation 査読有り国際誌

K. O. Hara, C. T. Trinh, Y. Nakagawa, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

JJAP Conf. Proc. 5 巻頁： 11202 2017年1月

Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells 査読有り国際誌

Gotoh Kazuhiro, Cui Min, Thanh Nguyen Cong, Koyama Koichi, Takahashi Isao, Kurokawa Yasuyoshi, Matsumura Hideki, Usami Noritaka

PROC. 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 頁： 1765 - 1768 2017年

Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells 査読有り国際誌

Atsushi Hombe, Yasuyoshi Kurokawa, Noritaka Usami

PROC. 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) 頁： 357 - 360 2016年11月

Control of the electrical properties of BaSi <inf>2</inf> evaporated films for solar cell applications 査読有り国際誌

Kosuke O. Hara, Cham Thi Trinh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Takashi Suemasu, Noritaka Usami

PROC. 2016 IEEE 43RD PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 頁： 2786 - 2789 2016年11月

Application of new doping techniques to solar cells for low temperature fabrication 査読有り国際誌

Isao Takahashi, Yasuhiro Sujihara, Huang Yating, Jefferson A. Wibowo, Sergii Tutashkonko, Yasuyoshi Kurokawa, Noritaka Usami

PROC. 43RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 2522 - 2524 2016年11月

Effects of Luminescent Coupling in Perovskite/c-Si Multijunction Solar Cells with Nanostructured Interlayer 査読有り国際誌

T. Tayagaki, Y. Kurokawa, N. Usami

Proc. 32nd European Photovoltaic Solar Energy Conference and Exhibition 頁： 205 - 208 2016年9月

Structure and physical properties of stable isotopic amorphous carbon films 査読有り国際誌

Y. Suzuki, Y. Kurokawa, T. Suzuki, K. Kanda, M. Niibe, M. Nakano, N. Ohtake, H. Akasaka

Diamond and Related Materials 63 巻頁： 115 - 119 2015年10月

Flexible Cu(In,Ga)Se-2 solar cells fabricated using a polyimide-coated soda-lime glass substrate 査読有り国際誌

Sadono Adiyudha, Hino Masashi, Ichikawa Mitsuru, Yamamoto Kenji, Kurokawa Yasuyoshi, Konagai Makoto, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 54 巻 ( 8 ) 頁： 08KC16 2015年8月

Control of valence band offset at CdS/Cu(In,Ga)Se-2 interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se-2 solar cells 査読有り国際誌

Nishimura Takahito, Hirai Yoshiaki, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 54 巻 ( 8 ) 頁： 08KC08 2015年8月

Microstructural characterization of Cu2ZnSn(S,Se)(4) solar cells fabricated from nanoparticles 査読有り国際誌

Zhang Yiwen, Suyama Naoki, Goto Masanori, Kuwana Jun, Sugimoto Kanta, Satake Tetsuo, Kurokawa Yasuyoshi, Yin Ming, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 54 巻 ( 8 ) 頁： 08KC05 2015年8月

Graphene transparent electrode for thin-film solar cells 査読有り国際誌

Ishikawa Ryousuke, Kurokawa Yasuyoshi, Miyajima Shinsuke, Konagai Makoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6 6 巻頁： 777 - 780 2015年6月

Improvement of Cu2ZnSn(S,Se)(4) solar cell efficiency by surface treatment 査読有り国際誌

Furuta Kento, Sakai Noriyuki, Kato Takuya, Sugimoto Hiroki, Kurokawa Yasuyoshi, Yamada Akira

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS 6 巻頁： 704 - 707 2015年6月

Fabrication of Cu(In,Ga)Se-2 solar cells with a single graded band profile 査読有り国際誌

Nishimura Takahito, Kasashima Shunsuke, Hirai Yoshiaki, Kurokawa Yasuyoshi, Yamada Akira

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 6 ) 頁： 1235 - 1238 2015年6月

Theoretical and experimental investigation of the recombination reduction at surface and grain boundaries in Cu(In,Ga)Se2 solar cells by valence band control 査読有り国際誌

Takahito Nishimura, Yoshiaki Hirai, Yasuyoshi Kurokawa, Akira Yamada

MRS Proceedings 1771 巻頁： 125 - 131 2015年4月

Electrical characterization of Cu(In, Ga)Se-2 thin films peeled off from Mo-coated soda-lime glass substrate by AC Hall measurement 査読有り国際誌

Umehara Takeshi, Iinuma Shohei, Sadono Adiyudha, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 54 巻 ( 1 ) 頁： 018001 2015年1月

Silicon nanowire arrays passivated by Al2O3/TiO2 stack layers 査読有り国際誌

Yasuharu Yamada, Yasuyoshi Kurokawa, Shinya Kato, Akira Yamada

PROC. 40TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 2903 - 2907 2014年10月

Effect of Tapered Shape on Performance of Silicon Nanowire Solar Cells 査読有り国際誌

Kurokawa Yasuyoshi, Kato Shinya, Konagai Makoto

NEXT GENERATION TECHNOLOGIES FOR SOLAR ENERGY CONVERSION V 9178 巻頁： 91780N 2014年10月

Solution of Roll-over-Shaped J-V Characteristics of Ag(In,Ga)Se2 Solar Cells 査読有り国際誌

T. Umehara, S. Iinuma, Y. Kurokawa, A. Yamada

Proc. 29th European Photovoltaic Solar Energy Conference and Exhibition 頁： 1444 - 1447 2014年9月

Diameter Reduction of Silicon Nanowires Using Ozone Oxidation Method for the Application to the All-Silicon Tandem Solar Cells 査読有り国際誌

Y. Kurokawa, E. Ishida, Y. Yamada, S. Kato, A. Yamada

Proc. 29th European Photovoltaic Solar Energy Conference and Exhibition 頁： 298 - 302 2014年9月

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer 査読有り国際誌

Yamada Shigeru, Kurokawa Yasuyoshi, Miyajima Shinsuke, Konagai Makoto

NANOSCALE RESEARCH LETTERS 9 巻頁： 246 2014年5月

Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix 査読有り国際誌

Yamada Shigeru, Kurokawa Yasuyoshi, Miyajima Shinsuke, Konagai Makoto

NANOSCALE RESEARCH LETTERS 9 巻頁： 72 2014年2月

Solid-phase crystallization of amorphous silicon nanowire array and optical properties 査読有り国際誌

Ishikawa Ryousuke, Kato Shinya, Yamazaki Tatsuya, Kurokawa Yasuyoshi, Miyajima Shinsuke, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 53 巻 ( 2 ) 頁： 02BE09 2014年2月

Numerical study of Cu(In,Ga)Se-2 solar cell performance toward 23% conversion efficiency 査読有り国際誌

Hirai Yoshiaki, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 53 巻 ( 1 ) 頁： 012301 2014年1月

Radical-assisted chemical doping for chemically derived graphene 査読有り国際誌

Ishikawa Ryousuke, Ko Pil Ju, Bando Masashi, Kurokawa Yasuyoshi, Sandhu Adarsh, Konagai Makoto

NANOSCALE RESEARCH LETTERS 8 巻頁： 534 2013年12月

Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition 査読有り国際誌

Kato Shinya, Kurokawa Yasuyoshi, Miyajima Shinsuke, Watanabe Yuya, Yamada Akira, Ohta Yoshimi, Niwa Yusuke, Hirota Masaki

NANOSCALE RESEARCH LETTERS 8 巻頁： 361 2013年8月

Observation of Light Scattering Properties of Silicon Nanowire Arrays 査読有り国際誌

Y. Kurokawa, Y. Watanabe, S. Kato, Y. Yamada, A. Yamada, Y. Ohta, Y. Niwa, M. Hirota

Proc. IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) 頁： 1880 - 1884 2013年6月

Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching 査読有り国際誌

Kato Shinya, Kurokawa Yasuyoshi, Watanabe Yuya, Yamada Yasuharu, Yamada Akira, Ohta Yoshimi, Niwa Yusuke, Hirota Masaki

NANOSCALE RESEARCH LETTERS 8 巻頁： 216 2013年5月

Deposition of Ag(In,Ga)Se-2 Solar Cells by a Modified Three-Stage Method Using a Low-Temperature- Deposited Ag-Se Cap Layer 査読有り国際誌

Zhang Xianfeng, Kobayashi Tsuyoshi, Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 5 ) 頁： 055801 2013年5月

Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers 査読有り国際誌

Yamada Shigeru, Kurokawa Yasuyoshi, Miyajima Shinsuke, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 4 ) 頁： 04CR02 2013年4月

Laser Scribing of W-textured ZnO Substrates Using Green Laser 査読有り国際誌

Ryousuke Ishikawa, Hidetoshi Wada, Yasuyoshi Kurokawa, Porponth Sichanugrist, Makoto Konagai

MRS Proceedings 1493 巻頁： 207 - 212 2013年2月

Influence of Surface Recombination on the Performance of SiNW Solar Cells and the Preparation of a Passivation Film 査読有り国際誌

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, Masaki Hirota

MRS Proceedings 1512 巻頁： Mrsf12-1512-ff17-05 2013年2月

Numerical Simulation about Effects of Bandgap Grading in Cu(In,Ga)Se-2 with a Bandgap of 1.4 eV on Solar Cell Performance 査読有り国際誌

Hirai Yoshiaki, Suzuki Ryotaro, Kurokawa Yasuyoshi, Yamada Akira

PROC. IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) 頁： 3307 - 3309 2013年

Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO2 Matrix 査読有り国際誌

Kurokawa Yasuyoshi, Kato Shinya, Watanabe Yuya, Yamada Akira, Konagai Makoto, Ohta Yoshimi, Niwa Yusuke, Hirota Masaki

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 11 ) 頁： 11PE12 2012年11月

Layer-by-Layer Assembled Transparent Conductive Graphene Films for Silicon Thin-Film Solar Cells 査読有り国際誌

Ishikawa Ryousuke, Bando Masashi, Wada Hidetoshi, Kurokawa Yasuyoshi, Sandhu Adarsh, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 11 ) 頁： 11PF01 2012年11月

Growth of Ag(In,Ga)Se-2 Films by Modified Three-Stage Method and Influence of Annealing on Performance of Solar Cells 査読有り国際誌

Zhang Xianfeng, Kobayashi Tsuyoshi, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 10 ) 頁： 10NC05 2012年10月

Improvement of the Band Profile of Cu(In,Ga)Se-2 Solar Cells with High-Ga Content Prepared Using a Five-Stage Method 査読有り国際誌

Hirai Yoshiaki, Hidaka Yukiya, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 10 ) 頁： 10NC03 2012年10月

Numerical Approach to the Performance of Silicon Quantum Dots Superlattice Solar Cells Taking into Account the Quantum Effect 査読有り国際誌

Kurokawa Yasuyoshi, Yamada Shigeru, Konagai Makoto

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 10 ) 頁： 10NE09 2012年10月

High Temperature Preparation of Cu(In,Ga)Se2 Thin Films with High Ga Content 査読有り国際誌

Y. Hirai, T. Kashima, Y. Kurokawa, A. Yamada

Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition 頁： 2321 - 2323 2012年9月

Layer-by-layer assembled transparent conductive graphene films for solar cells application 査読有り国際誌

Ryousuke Ishikawa, Masashi Bando, Yasuyoshi Kurokawa, Adarsh Sandhu, Makoto Konagai

MRS Proceedings 1451 巻頁： 75 - 81 2012年7月

Effect of the Quantum Size Effect on the Performance of Solar Cells with a Silicon Nanowire Array Embedded in SiO2 査読有り国際誌

Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

MRS Proceedings 1439 巻頁： 145 - 150 2012年6月

Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy 査読有り国際誌

Daisuke Hamashita, Yasuyoshi Kurokawa, Makoto Konagai

MRS Proceedings 1426 巻頁： 347 - 352 2012年5月

Characterization of Ag(In, Ga)Se2/CdS interface in AIGS solar cell by HAADF-STEM measurement 査読有り国際誌

Zhang Xianfeng, Kobayashi Tsuyoshi, Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira

PROC. 37TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 149 - 152 2012年4月

High thermostable and conductive niobium doped titanium oxide for the application to a diffusion barrier layer of silicon quantum dot superlattice solar cell structure 査読有り国際誌

Shigeru Yamada, Yasuyoshi Kurokawa, Makoto Konagai

PROC. 37TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 2113 - 2116 2012年4月

Metal-Assisted Chemical Etching Using Silica Nanoparticle for the Fabrication of a Silicon Nanowire Array 査読有り国際誌

Kato Shinya, Watanabe Yuya, Kurokawa Yasuyoshi, Yamada Akira, Ohta Yoshimi, Niwa Yusuke, Hirota Masaki

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 2 ) 頁： 02BP09 2012年2月

Experimental and Theoretical Evaluation of Cu(In,Ga)Se-2 Concentrator Solar Cells 査読有り国際誌

Hirai Yoshiaki, Nagashima Hiroshi, Kurokawa Yasuyoshi, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 51 巻 ( 1 ) 頁： 014101 2012年1月

Comparison of Interface Characterization between Ag(In,Ga)Se-2 and Cu(In,Ga)Se-2 Solar Cells by High-Angle-Annular Dark-Field Scanning Transmission Electron Microscopy 査読有り国際誌

Zhang Xianfeng, Kobayashi Tsuyoshi, Kurokawa Yasuyoshi, Tashiro Yoshiyuki, Ohtsuka Masahiro, Yamada Tomoyuki, Yamada Akira

JAPANESE JOURNAL OF APPLIED PHYSICS 50 巻 ( 12 ) 頁： 126603 2011年12月

第三世代太陽電池研究開発の現状--シリコン量子ドットを用いた次世代太陽電池 (特集次世代太陽電池開発の最前線) 査読有り

黒川康良, 小長井誠

ケミカルエンジニヤリング 56 巻 ( 3 ) 頁： 232 - 237 2011年3月

Size-Controlled Silicon Quantum Dots Superlattice for Thin-Film Solar Cell Applications 査読有り国際誌

Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

MRS Proceedings 1101 巻頁： 1101-KK12-01 2011年2月

Preparation of p-type Hydrogenated Nanocrystalline Cubic Silicon Carbide/n-type Crystalline Silicon Heterojunction Solar Cells by VHF-PECVD 査読有り国際誌

Hamashita Daisuke, Kurokawa Yasuyoshi, Konagai Makoto

Energy Procedia 10 巻頁： 14 - 19 2011年

Light management of a-Si:H solar cells using textured zinc oxide with adjustable haze values 査読有り国際誌

Zhang Liping, Yunaz Ihsanul Afdi, Kasashima Shunsuke, Wada Hidetoshi, Hongsingthong Aswin, Krajangsang Taweewat, Kurokawa Yasuyoshi, Konagai Makoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS 8 巻 ( 10 ) 頁： 2998 - 3001 2011年

Introduction of Oxygen into the Barrier Layers in a Si Quantum Dots Superlattice Using a-SiC Matrix to Improve the Solar Cell Performance 査読有り国際誌

Y. Kurokawa, S. Yamada, S. Miyajima, A. Yamada, M. Konagai

Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion 頁： 2748 - 2752 2010年9月

Development of SiOx and SiOx/ SiO2 Superlattice for Application in Solar Cells 査読有り国際共著国際誌

S. Ray, S. Mukhopadhyay, Y. Kurokawa, M. Konagai

Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion 頁： 591 - 594 2010年9月

Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice 査読有り国際誌

Kurokawa Yasuyoshi, Yamada Shigeru, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

CURRENT APPLIED PHYSICS 10 巻 ( 3 ) 頁： S435 - S438 2010年5月

HIGH OPEN-CIRCUIT VOLTAGE OXYGEN-CONTAINING SILICON QUANTUM DOTS SUPERLATTICE SOLAR CELLS 査読有り国際誌

Yamada Shigeru, Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

PROC. 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 766 - 769 2010年

Effects of Nitrogen on the Electrical Properties of Si Quantum Dots Superlattice Using a-SiC Matrix 査読有り国際誌

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, M. Konagai

Proc. 24th European Photovoltaic Solar Energy Conference 頁： 398 - 403 2009年9月

新概念高性能太陽電池の展開 : 第3世代太陽電池開発の現状(<特集>太陽電池開発の将来展望) 査読有り

小長井誠, 黒川康良

日本エネルギー学会誌 87 巻 ( 3 ) 頁： 193 - 198 2008年3月

担当区分：最終著者記述言語：日本語

Present status of third generation photovoltaics is reviewed. Recently, inter-band solar cells, hot carrier solar cells or all silicon tandem solar cells have been proposed to overcome the efficiency limit of conventional solar cells, and this kind of new concepts is named as "the third generation solar cell". All silicon tandem solar cells are the most promising as the third generation solar cell, since silicon is abundant on the earth and nontoxic. To realize all silicon tandem solar cells, silicon quantum dots superlattice (Si-QDSL) is the most important structure since Si-QDSL enables us to obtain bandgap-controlled materials. Si-QDSL is composed of the aligned silicon quantum dots in a silicon-based wide gap material. In this paper, preparation techniques and preliminary optical properties of Si/SiO, Si/SiN and Si/SiC-QDSL's will be presented.

OBSERVATION OF THE PHOTOVOLTAICS EFFECT FROM THE SOLAR CELLS USING SILICON QUANTUM DOTS SUPERLATTICE AS A LIGHT ABSORPTION LAYER 査読有り国際誌

Kurokawa Yasuyoshi, Tomita Shigeki, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

PROC. 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 頁： 858 - 863 2008年

TiO2-Coated Transparent Conductive Oxide (SnO2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen. 査読有り

M. Kambe, K. Sato, D. Kobayashi, Y. Kurokawa, S. Miyajima, M. Fukawa, N. Taneda, A. Yamada, M. Konagai

Japanese Journal of Applied Physics 45 巻頁： L291 - L293 2006年3月

Nanocrystalline silicon in amorphous silicon carbide matrix for Si quantum dots superlattice 査読有り国際誌

Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira, Konagai Makoto

PROC. 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion 頁： 138 - 141 2006年

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