Faculty Profiles - KUROKAWA Yasuyoshi

Papers - KUROKAWA Yasuyoshi

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Activation mechanism of TiOx passivating layer on crystalline Si Reviewed International journal

Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

APPLIED PHYSICS EXPRESS Vol. 11 ( 10 ) page： 102301 2018.10

Stacks of a-SiOx:H/a-Si:H Passivation Layer for Low Parasitic Absorption and High Passivation in Silicon Heterojunction Solar Cells Reviewed International journal

K. Gotoh, M. Cui, R. Akaishi, Y. Kurokawa, N. Usami

Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition page： 636 - 638 2018.9

Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells Reviewed International journal

Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) page： 08RB21 2018.8

Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed International journal

Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) page： 08RF08 2018.8

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks Reviewed International coauthorship International journal

Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) page： 08RB04 2018.8

Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed International coauthorship International journal

Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) page： 08RF09 2018.8

Solid State Devices and Materials FOREWORD Reviewed

Kageshima Hiroyuki, Hosoi Takuji, Iwamoto Satoshi, Arie Takayuki, Fujino Masahisa, Fukuzaki Yuzo, Harada Syunta, Ikegami Masashi, Iwamuro Noriyuki, Johguchi Koh, Kakushima Kuniyuki, Kanaya Haruichi, Kikuchi Akihiko, Kinoshita Kentaro, Kuroda Rihito, Kurokawa Yasuyoshi, Maehashi Kenzo, Maekawa Keiichi, Makino Toshiharu, Matsushima Toshinori, Miyata Toshitaka, Morioka Hiroshi, Morioka Hiroshi, Murugesan Mariappan, Nagashio Kosuke, Nagata Takahiro, Nakatsuka Osamu, Nishiyama Nobuhiko, Oiwa Akira, Okada Hiroyuki, Ono Teruo, Sakamoto Toshitsugu, Sakata Toshiya, Shirao Mizuki, Sukegawa Kazuo, Suzuki Toshikazu, Suzuki Hidetoshi, Taima Tetsuya, Tanaka Tetsu, Tatsuoka Kohichi, Tawara Takehiko, Tsuda Kunio, Yamamoto Kazuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon International coauthorship International journal

Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 75 page： 143 - 148 2018.3

Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films Reviewed International journal

Yasuyoshi Kurokawa, Ryota Nezasa, Shinya Kato, Hisashi Miyazaki, Isao Takahashi, Noritaka Usami

MRS Advances Vol. 3 ( 25 ) page： 1419 - 1426 2018

Authorship：Lead author,　Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Materials Research Society

To improve conversion efficiency of silicon nanowire (SiNW) solar cells, it is very important to reduce the surface recombination rate on the surface of SiNWs, since SiNWs have a large surface area. We tried to cover SiNWs with aluminum oxide (Al2O3) and titanium oxide (TiO2) by atomic layer deposition (ALD), since Al2O3 grown by ALD provides an excellent level of surface passivation on silicon wafers and TiO2 has a higher refractive index than Al2O3, leading to the reduction of surface reflectance. The effective minority carrier lifetime in SiNW arrays embedded in a TiO2/Al2O3 stack layer of 94 μsec was obtained, which was comparable to an Al2O3 single layer. The surface reflectance of SiNW solar cells was drastically decreased below around 5% in all of the wavelength range using the Al2O3/TiO2/Al2O3 stack layer. Heterojunction SiNW solar cells with the structure of ITO/p-type hydrogenated amorphous silicon (a-Si:H)/n-type SiNWs embedded in Al2O3 and TiO2 stack layer for passivation/n-type a-Si:H/back electrode was fabricated, and a typical rectifying property and open-circuit voltage of 356 mV were successfully obtained.

DOI： 10.1557/adv.2018.40

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Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications Reviewed International journal

Kazuma Takahashi, Yoshihiko Nakagawa, Kosuke O. Hara, Isao Takahashi, Yasuyoshi Kurokawa, Noritaka Usami

MRS Advances Vol. 3 ( 25 ) page： 1435 - 1442 2018

Language：English Publishing type：Research paper (scientific journal) Publisher：Materials Research Society

A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

DOI： 10.1557/adv.2018.191

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EFFECT OF NOVEL SUB-MICRON STRUCTURE FABRICATED ONTO CRYSTALLINE SILICON ON OPTICAL PROPERITES AND MINORITY CARRIER LIFETIME Reviewed International journal

Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Gotoh Kazuhiro, Usami Noritaka

Proc. Grand Renewable Energy 2018 Vol. 1 ( 0 ) 2018

Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells Reviewed International coauthorship International journal

N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorohodov, M. V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami

Semiconductors Vol. 51 ( 12 ) page： 1542 - 1546 2017.12

Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts Reviewed International journal

K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

Energy Procedia Vol. 124 page： 598 - 603 2017.9

Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source Reviewed International journal

Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

THIN SOLID FILMS Vol. 636 page： 546 - 551 2017.8

Peeling process of thin-film solar cells using graphene layers Reviewed International journal

R. Ishikawa, Y. Kurokawa, S. Miyajima, and M. Konagai

Applied Physics Express Vol. 10 page： 082301 2017.7

Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures Reviewed International journal

Yasuyoshi Kurokawa, Osamu Aonuma, Takeshi Tayagaki, Isao Takahashi and Noritaka Usami

Jpn. J. Appl. Phys. Vol. 56 ( 8S2 ) page： 08MA02 2017.7

Postannealing effects on undoped BaSi<inf>2</inf>evaporated films grown on Si substrates Reviewed International coauthorship International journal

Takamichi Suhara, Koichi Murata, Aryan Navabi, Kosuke O. Hara, Yoshihiko Nakagawa, Cham Thi Trinh, Yasuyoshi Kurokawa, Takashi Suemasu, Kang L. Wang, Noritaka Usami

Japanese Journal of Applied Physics Vol. 56 ( 5S1 ) page： 05DB05 2017.5

Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties Reviewed International journal

Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) page： 05DB06 2017.5

Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells Reviewed International journal

K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami

Jpn. J. Appl. Phys. Vol. 56 page： 05DB04 2017.4

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films Reviewed International journal

S. Kato, T. Yamazaki, Y. Kurokawa, S. Miyajima, and M. Konagai

Nanoscale Research Letters Vol. 12 page： 242 2017.3

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Papers - KUROKAWA Yasuyoshi