産業技術総合研究所   窒化物半導体先進デバイスＯＩＬ（兼務）   客員研究員

2017.5

Hiroshima University   Resrarch Institute for Nanodevices

2010.8

公益社団法人　応用物理学会   フェロー   フェロー

2009.9

南京大学   電子科学与工程学院（兼務）   兼職教授

2010.10 - 2017.11

University of Tsukuba

2011.9 - 2015.3

Hiroshima University   Professor

2002.4 - 2010.5

Hiroshima University

2001.4 - 2002.3

Hiroshima University

1992.4 - 2001.3

Hiroshima University   Assistant

1986.4 - 1992.3

公社）日本表面真空学会   中部支部　役員（2018年5月～）

旧）公社）日本表面科学会   中部支部　役員（2011年5月～2018年5月まで）

The Materials Research Society of Japan

公社）日本工学教育協会   理事（2022年6月～2024年6月まで）、事業企画委員会委員（2018年6月～2020年6月まで）

Material Reseach Society

The Electrochemical Society

一般社団法人 愛知県発明協会   参与  

2021.7 - 2023.6   

公益財団法人 中部電気利用基礎研究振興財団   評議員  

2021.6 - 2026.6   

公益財団法人 永井科学技術財団   評議員  

2021.6 - 2024.6   

公益財団法人 科学技術交流財団   企画運営委員会委員  

2021.6 - 2023.6   

東海工学教育協会   副会長  

2021.6 - 2022.6   

公益財団法人 名古屋産業科学研究所   理事  

2021.5 - 2024.6   

公益財団法人 日比科学技術振興財団   理事  

2021.5 - 2024.5   

公益財団法人 名古屋産業科学研究所   中部ハイテクセンター企画運営委員会委員  

2021.5 - 2023.3   

中部原子力懇談会   参与  

2021.4 - 2024.3   

公益財団法人 名古屋産業科学研究所   中部TLO企画運営委員会委員  

2021.4 - 2024.3   

一般社団法人 八大学工学系連合会   理事  

2021.4 - 2023.4   

公益財団法人 中部科学技術センター   中部イノベネット運営委員  

2021.4 - 2023.3   

公益財団法人 立松財団   理事  

2021.4 - 2023.3   

公益財団法人 科学技術交流財団   主幹研究員  

2021.4 - 2022.3   

The Electrochemical Society（ECS）日本支部   日本支部長  

2021.1 - 2022.12   

公益財団法人 岐阜県産業経済振興センター   研究開発委員会　委員（アドバイザー）  

2020.9 - 2023.3   

Nanomaterials, Editorial Board Member   Editorial Board Member  

2020.7   

独立行政法人 日本学術振興会　R025先進薄膜界面機能創成委員会   委員  

2020.6   

日本放射光学会年会・放射光科学合同シンポジウム（JSR)組織委員会   JSR2021組織委員  

2020 - 2021   

公益財団法人 科学技術交流財団   あいちシンクロトロン光センター運営委員会委員  

2019.5 - 2023.6   

公益社団法人 応用物理学会　薄膜・表面物理分科会   顧問  

2019.4   

東京医科歯科大学   生体医歯工学共同研究拠点運営委員会委員  

2019.4 - 2024.3   

日本放射光学会　年会・放射光科学合同シンポジウム（JSR)組織委員会   JSR2020副実行委員長/プログラム委員/組織委員  

2019 - 2020   

11th Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/12th Int. Conf. on Plasma-Nano Technology (ISPlasma 2019/IC-PLANT 2019; Nagoya, March 17-21, 2019) Organizing Committee Chair   国際会議・シンポジウム　オーガナイザ  

2019   

8th Int. Symp. on Control of Semiconductor Interfaces (Sendai, Nov. 27-30, 2019) Organizing Committee Chair   国際会議・シンポジウム　オーガナイザ  

2019   

公益社団法人 日本工学教育協会   事業企画委員会委員  

2018.6 - 2020.6   

公益社団法人 日本表面真空学会　中部支部   役員  

2018.5   

独立行政法人 日本学術振興会　協力会   評議員  

2018.5 - 2020.9   

Int. SiGe Technology and Device Meeting (ISTDM)/Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI) (Joint ISTDM/ICSI Conf.; 1st 2018 (Potsdam), 2nd 2019(Madison WI), 3rd 2021(Taipei))   国際会議諮問委員  

2018 - 2021   

1st joint Int. SiGe Technology and Device Meeting (ISTDM)/Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI) (1st Joint ISTDM/ICSI Conf., Potsdam, 2018) Co-chair   国際会議プログラム委員, Co-chair  

2018   

14th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (Sendai, Oct.21-15, 2018) Organizing Committee Chair   国際会議・シンポジウム　オーガナイザ  

2018   

10th Anniversary Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/11th Int. Conf. on Plasma-Nano Technology (ISPlasma 2018/IC-PLANT 2018; Nagoya, March 4-8, 2018) Organizing Committee Vice-Chair   国際会議・シンポジウム　オーガナイザ  

2018   

公益社団法人 応用物理学会　東海支部   諮問委員  

2017.4 - 2025.3   

国立研究開発法人 産業技術総合研究所   窒化物半導体先進デバイスＯＩＬ客員研究員  

2017.4 - 2024.3   

公益社団法人　応用物理学会 薄膜・表面物理分科会   幹事長  

2017.4 - 2019.3   

European Mat. Res. Soc. Fall Meeting:　Symp. I　"Integration of Novel Materials and Devices on Silicon for Future Technologies" (Warsaw, 2016)   国際会議プログラム委員  

2016   

2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016, Hakodate, 2016) Steering Committee Co-chair   国際会議実行委員  

2016   

7th Int. Symp. on Control of Semiconductor Interfaces (Nagoya, June 7-16, 2016) Organizing Committee Chair   国際会議・シンポジウム　オーガナイザ  

2016   

8th Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/9th Int. Conf. on Plasma-Nano Technology & Sicence (ISPlasma 2016/IC-PLANTS2016, Nagoya, 2016) Executive Committee Chair   国際会議実行委員  

2016   

公益社団法人 応用物理学会 薄膜・表面物理分科会／シリコンテクノロジー分科会 共催 電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―   運営委員  

2015   

公益社団法人　応用物理学会　学術教育・奨励基金委員会   委員  

2015   

公益社団法人　応用物理学会 東海支部   支部長  

2015 - 2016   

Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/Int. Conf. on Plasma-Nano Technology (ISPlasma/IC-PLANTS; 2014 － 2018, 2020 ～)   国際会議プログラム委員  

2014   

Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/Int. Conf. on Plasma-Nano Technology & Science (ISPlasma/IC-PLANTS, 2014～　)   国際会議組織運営委員  

2014   

Int. Conf. on Solid State Devices and Materials (SSDM; 2014～　)   国際会議組織運営委員  

2014   

ECS Trans. Vol. 98, No. 5 (2020), Vol. 85, No.16 (2018), Vol.75, No.8 (2016), Vol.64, No. 6 (2014), Ed. Member   Ed. Member  

2014 - 2020   

Thin Solid Films, Vol 557, 30 (2014), Managing Gest Editor   Managing Gest Editor  

2014   

8th Int．Conf．on Reactive Plasmas (ICRP-8; Fukuoka, 2014)   国際会議諮問委員  

2014   

公益社団法人　応用物理学会 講演会企画・運営委員会   委員  

2013.4 - 2014.3   

公益社団法人　応用物理学会   諮問委員  

2013.2 - 2014.2   

6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI, Fukuoka, 2013)   国際会議組織運営委員  

2013   

Electrochemical Society   ECS Japan Section, Member-at-large(2012.8～2016.12), 2nd Vice Chair(2017.1～2018.12), 1st Vice Chair(2019.1～2020.12)  

2012.8 - 2020.12   

高輝度光科学研究センターSPring-8成果審査委員会   査読者  

2012.1 - 2014.3   

Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials (ISPlasma，4th 2012, 5th 2013)   国際会議プログラム委員  

2012 - 2013   

J. Non-Cryst. Solids, Vol.358, Issue 17 (2012) : Special Issue for Proc. of the 24th Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS 24) Guest Editor (Head of Guest Editors)   Guest Editor (Head of Guest Editors)  

2012   

電子情報通信学会　エレクトロニクスソサイエティ英文論文誌編集委員会   編集委員  

2011.9 - 2012.5   

SPring-8利用研究課題審査委員会分科会   レフェリー  

2011.6 - 2013.3   

旧） 公益社団法人　日本表面科学会　中部支部   役員  

2011.5 - 2018.5   

公益社団法人 応用物理学会　シリコンテクノロジー分科会   諮問委員  

2011.4   

公益社団法人　応用物理学会　東海支部   幹事  

2011.4 - 2016   

公益社団法人　応用物理学会   理事 (2011/2012年度; 講演会企画・運営委員会、講演奨励賞委員会, 2015/2016年度)  

2011.4 - 2016   

公益社団法人 応用物理学会 薄膜・表面物理分科会／シリコンテクノロジー分科会 共催　特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」   運営委員  

2011.3 - 2015.3   

Int. Workshop on Dielectric Thin Films (IWDTF; Tokyo, 2011(Chair), 2013, 2015, 2017, 2019, 2021)   国際会議組織運営委員  

2011 - 2021   

24th Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS24, Nara, 2011)   国際会議プログラム委員  

2011   

Key Engineering Materials, Vol.470 "Technology Evolution for Silicon Nano-Electronics", (2011) Editor   Editor  

2011   

Jpn. J. Appl. Phys. 50, No.1 (2011): Selected Topics in Applied Physics: Technology Evolution for Silicon Nano-Electronics, Guest Editor   Guest Editor  

2011   

2011 Int. Workshop on Dielectric Thin Films (IWDTF-11，Tokyo, 2011) Chair   国際会議組織運営委員  

2011   

15th Int. Conf. on Thin Films (ICTF-15, Kyoto, 2011) Session Chair   国際会議組織運営委員  

2011   

24th Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS24, Nara, 2011) Publication Chair: JNCS Guest Editor   国際会議組織運営委員  

2011   

日本学術振興会　科学研究費委員会   専門委員  

2010.12 - 2011.11   

南京大学　電子科学与工程学院   兼職教授  

2010.10 - 2017.11   

広島大学 ナノデバイス研究所   客員教授  

2010.8   

Int. Symp. on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials (ISPlasma; Nagoya, 2nd 2010, 3rd 2011, 4th 2012, 5th 2013)   国際会議組織運営委員  

2010 - 2013   

公益社団法人　応用物理学会   フェロー  

2009.9   

公益社団法人　応用物理学会　国際委員会   委員  

2009.4 - 2012   

Int. Symp on Dry Process Symp. (DPS: Busan, 2009(Vice-chair), Tokyo, 2010(Chair), Kyoto, 2011(Vice-chair))   国際会議実行委員  

2009 - 2011   

1st Int. Workshop on Si based nano-electronics and -photonics (SINEP-09; Vigo, 2009)   国際会議プログラム委員  

2009   

公益社団法人　応用物理学会　   2009年度中国四国支部学術講演会 (2009年8月1日)　実行委員長  

2009   

公益社団法人　応用物理学会   評議員  

2008.4 - 2011.3   

独立行政法人 日本学術振興会　アモルファス・ナノ材料第147委員会   委員  

2008   

SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium in ECS (2008(Hawaii), 2010(Las Vegas), 2012(Hawaii), 2014(Cancun), 2016(Honolulu), 2018(Cancun), 2020(Honolulu)) Surfaces & Interfaces Committee Chair   国際会議組織運営委員  

2008 - 2020   

Int. SiGe Technology and Device Meeting (ISTDM, 4th 2008, 5th 2010, 6th 2012, 8th 2016)   国際会議プログラム委員  

2008 - 2016   

Int. Conf. on Plasma Nanotechnology & Science (IC-PLANTS; 2008 － 2012)   国際会議プログラム委員  

2008 - 2012   

2008 Int. Workshop on Dielectric Thin Films (IWDTF-08，Kawasaki, 2008)   国際会議実行委員  

2008   

Symp. Z, "Material Science and Process Technologies for Advanced Nano-Electronic Devices" (Nagoya, Dec. 9-13, 2008) The IUMRS International Conference in Asia 2008 (IUMRS-ICA, 2008)   国際会議・シンポジウム　オーガナイザ  

2008   

Int. Symp. on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations-(ISCSI; 5th 2007, 6th 2013)   国際会議プログラム委員  

2007 - 2013   

Symp. "A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (San Francisco, April 9-13, 2007; 2008), Mat. Res. Soc. Spring Meeting   国際会議・シンポジウム　オーガナイザ  

2007 - 2008   

5th Int. Symp. on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V, Tokyo, 2007)   国際会議組織運営委員  

2007   

5th Int. Symp. on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations-(ISCSI-V, Tokyo, 2007) Vice-chair   国際会議実行委員  

2007   

IEICE Trans. on Electronics; E102-C, No. 6 (2019), E101-C, No. 5 (2018), E100-C, No. 5 (2017), E99-C, No. 5 (2016), E98-C, No. 5 (2015), E97-C, No. 5 (2014), E96-C, No. 5 (2013), E95-C, No.5 (2012), E94-C, No.5 (2011), E93-C, No.5 (2010), E92-C, No.5 (2009), E91-C, No.5 (2008), E90-C, No.5 (2007), E89-C, No.5 (2006): Special Section on Fundamental and Applicationof Advanced Semiconductor Devices, Ed. Commitee Member   Special Section on Fundamental and Applicationof Advanced Semiconductor Devices, Ed. Commitee Member  

2006 - 2019   

European Mat. Res. Soc. Spring Meeting:　Symp. L　"Characterization of High-k Dielectric Materials" (Nice, 2006)   国際会議プログラム委員  

2006   

Int. Symp on Dry Process Symp. (DPS; 2005 － 2009, 2011～ )   国際会議プログラム委員  

2005   

Int. Workshop on New Group IV Semiconductor an Nanoelectronics (2005 ～ )   国際会議プログラム委員  

2005   

Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI; 4th 2005, 5th 2007, 6th 2009, 7th 2011(Co-chair), 8th 2013 (Chair))   国際会議プログラム委員  

2005 - 2013   

Int. Meeting for Future of Electron Devices, Kansai (IMFEDK; 2005 － 2010)   国際会議プログラム委員  

2005 - 2010   

IEICE Trans. on Electronics: Special Issue 2005-4EC, Ed. Commitee Member   Ed. Commitee Member  

2005   

The Special Joint Symp. on "Evolution and Outlook of Oxide Nonvolatile Memories" (Tokyo, Dec. 11, 2005), Mat. Res. Soc. Japan   国際会議・シンポジウム　オーガナイザ  

2005   

IEICE Trans. on Electronics E87-C, No.1 (2004): Special Section on High-k Gate Dielectrics, Guest Editor   Guest Editor  

2004   

Int．Conf．on Polycrystalline Semiconductors (POLYSE; Potsdam, 2004)   国際会議諮問委員  

2004   

一般社団法人　電気学会　システム集積プロセス調査専門委員会   委員  

2003.3 - 2006.3   

e-Journal of Surf. Sci. and Nanotechnology, Ed. Board Member(2003－)   Ed. Board Member  

2003   

Jpn. J. Appl. Phys. 50, No.4B (2011), 49, No.4B (2010), 48, No.4B (2009), 47, No.4B (2008), 46. No.4B (2007), 45. No.4B (2006), 44. No.4B (2005), 43. No.4B(2004), 42. No.4B (2003): Special Issue for Int. Conf. on Solid State Devices and Material, Ed. Commitee Member   Ed. Commitee Member  

2003 - 2011   

7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7, Nara, 2003)   国際会議実行委員  

2003   

4th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-4; Tokyo, 2002)   国際会議プログラム委員  

2002   

独立行政法人 日本学術振興会　半導体界面制御技術第154委員会   委員長(2013.4 － 2020.6), 企画幹事長(2008.4 － 2013.3), 企画副幹事長(2004.4 － 2008.3), 企画幹事（2001 － 2013.3)  

2001.4 - 2020.6   

公益社団法人　応用物理学会　   代議員 (2001-2003年度, 2012/2013年度, 2015/2016年度)  

2001 - 2016   

Int. Workshop on Gate Insulator (IWGI; 2001, 2003)   国際会議プログラム委員  

2001 - 2003   

Int. Conf. on Rapid Thermal Processing for Future Semiconductor Devices (RTP; Ise shima, 2001)   国際会議プログラム委員  

2001   

Jpn. J. Appl. Phys. 40, No.4B (2001): Special Issue for 2000 Int. Conf. on Solid State Devices and Material, Ed. Commitee Chairperson   Ed. Commitee Chairperson  

2001   

8th Int. Conf. on the Formation of Semiconductor Interface (ICFSI-8; Sapporo, 2001)   国際会議プログラム委員  

2001   

一般社団法人　電気学会　グローバルインテグレーションプロセス調査専門委員会   委員  

2000.3 - 2003.3   

Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD; 2000 ～, 2012(Chair))   国際会議プログラム委員  

2000   

公益社団法人　応用物理学会　シリコンテクノロジー分科会   幹事 (1999－2010年度, 常任幹事：2003/2004年度, 副幹事長2008/2009年度、幹事長：2009/2010年度)  

1999.4 - 2010.3   

Int. Workshop on Dielectric Thin Films (IWDTF; 1999, 2004, 2006) Vice-chair   国際会議プログラム委員  

1999 - 2006   

Silicon Nanoelectronics Workshop(SNW; 1999 － 2005)   国際会議プログラム委員  

1999 - 2005   

Int. Joint Conf. on Si Epi. and Heterostructure(IJC-Si; Zao, 1999)   国際会議プログラム委員  

1999   

3rd. Int. Symp. on Surface Science for Micro- and Nano-Device Fablication (ISSS-3; Tokyo, 1999)   国際会議プログラム委員  

1999   

一般社団法人 電子情報通信学会　シリコン材料・デバイス研究専門委員会   SDM研究専門委員会　専門委員  

1998.5 - 2023.6   

独立行政法人 日本学術振興会　プラズマ材料科学第153委員会   委員  

1998 - 2003.3   

Jpn. J. Appl. Phys. Assoc. Editor (1998 － 2002)   Assoc. Editor  

1998 - 2002   

公益社団法人　応用物理学会   第59回応用物理学会学術講演会 (1998年9月15-18日)　現地実行委員  

1998   

1998 Int. Conf. on Solid State Devices and Materials (SSDM 1998, Hiroshima, 1998)   国際会議実行委員  

1998   

一般社団法人　電気学会　プロセス・インテグレーション調査専門委員会   委員  

1997.3 - 2000.3   

公益社団法人　応用物理学会 薄膜・表面物理分科会   幹事  

1997 - 2018   

Int. Conf. on Solid State Devices and Materials (SSDM; 1997 － 2012 , 2011(Vice-Chair), 2012(Chair))   国際会議プログラム委員  

1997 - 2012   

Mat. Res. Soc. Spring Meeting: Symp. A "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (San Fransicso, 1997, 1998)   国際会議プログラム委員  

1997 - 1998   

公益社団法人　応用物理学会　中国四国支部   幹事  

1995.4 - 2010.5   

独立行政法人 日本学術振興会　薄膜第131委員会   企画委員 (1993 － 2020.6), 庶務幹事(1999.4 － 2004.3)  

1993 - 2020.6   

Inoue Research Award for Young Scientists

1987.2   Inoue Foundation for Science  

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots Reviewed International journal

J. Wu, K. Makihara, H. Zhang, N. Taoka, A. Ohta, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E105.C ( 10 ) page： 616 - 621   2022.10

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures Reviewed International journal

K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E105.C ( 10 ) page： 610 - 615   2022.10

工学教育へ高まる期待 Reviewed

宮﨑 誠一

工学教育（J. of JSEE）   Vol. 70 ( 5 ) page： 5_1   2022.9

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure Reviewed International journal

K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 61 ( SH ) page： SH1012 (9 pages)   2022.7

Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique Reviewed International journal

Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 61 ( SD ) page： SD1012 (5 pages)   2022.6

Study on silicidation reaction of Fe nanodots with SiH4 Reviewed International journal

H. Furuhata, K. Makihara, Y. Shimura, S. Fujimori, Y. Imai, A. Ohta, N. Taoka, and S. Miyazaki

Applied Physics Express   Vol. 15 ( 5 ) page： 055503 (4 pages)   2022.5

Segregation control for ultrathin Ge layer in Al/Ge(111) system Reviewed International journal

A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 61 ( SA ) page： SA1014 (7 pages)   2022.1

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots Reviewed International journal

S. Honda, K. Makihara, N. Taoka, H. Furuhata, A. Ohta, D. Oshima, T. Kato, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 61 ( SA ) page： SA1008 (5 pages)   2022.1

Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots Reviewed International journal

S. Miyazaki, Y. Imai, and K. Makihara

ECS Transactions   Vol. 109 ( 4 ) page： 335 - 341   2022

Single germanene phase formed by segregation through Al(111) thin films on Ge(111) Reviewed International coauthorship International journal

J. Yuhara, H. Muto, M. Araidai, M. Kobayashi, A. Ohta, S. Miyazaki, S. Takakura, M. Nakatake, and G. L. Lay

2D Materials   Vol. 8 ( 4 ) page： 045039   2021.10

Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0) Reviewed

J. Yuhara, H. Shimazu, M. Kobayashi, A. Ohta, S. Miyazaki, S. Takakura, M. Nakatake, and G. L. Lay

Appl. Surf. Sci.   Vol. 550   page： 149236 (7 pages)   2021.6

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal Reviewed

A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 60 ( SB ) page： SBBK05 (6 pages)   2021.5

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy Reviewed

A. Ohta, T. Imagawa, N. Taoka, M. Ikeda, K. Makihara and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 60 ( SA ) page： SAAC02 (6 pages)   2021.1

Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots Invited Reviewed

S. Miyazaki, and K. Makihara

ECS Transactions   Vol. 104 ( 4 ) page： 105 - 112   2021

Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core Reviewed

K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki

Materials Science in Semiconductor Processing   Vol. 120   page： 105250 (5 pages)   2020.12

Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core Reviewed

T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

Materials Science in Semiconductor Processing   Vol. 119 ( 15 ) page： 105215 (4 pages)   2020.11

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode Reviewed

T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

ECS Transactions   Vol. 98 ( 5 ) page： 429-434   2020.9

Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing Reviewed

H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

ECS Transactions   Vol. 98 ( 5 ) page： 505-511   2020.9

Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe Reviewed

J. Wu, H. Zhang, H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

ECS Transactions   Vol. 98 ( 5 ) page： 493-498   2020.9

Complex dielectric function of Si oxide as evaluated from photoemission measurements Reviewed

A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 59 ( SM ) page： SMMB04 (8 pages)   2020.7

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface Reviewed

M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, N. Taoka, T. Simizu, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 59 ( SG ) page： SGGK15 (6 pages)   2020.4

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures Reviewed

N. Takada, N. Taoka, A. Ohta, T. Yamamoto, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 58 ( SI ) page： SIIB22 (5 pages)   2019.8

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure Reviewed

S. Fujimori, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 58 ( SI ) page： SIIA15 (4 pages)   2019.8

Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core Reviewed

S. Fujimori, R. Nagai, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 58 ( SI ) page： SIIA01 (4 pages)   2019.8

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots Reviewed

Y. Futamura, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E102.C ( 6 ) page： 458 - 461   2019.6

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties Reviewed

N. Takada, N. Taoka, T. Yamamoto, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 58 ( SE ) page： SEEC02 (4 pages)   2019.6

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy Reviewed

Y. Futamura, Y. Nakashima, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 58 ( SA ) page： SAAE01 (4 pages)   2019.2

Photoemission-Based Characterization of Gate Dielectrics and Stack Interfaces Invited Reviewed

S. Miyazaki, and A. Ohta

ECS Transactions   Vol. 92 ( 4 ) page： 11 - 19   2019

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core Reviewed

R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki

Semiconductor Science and Technology   Vol. 33 ( 12 ) page： 124021   2018.12

Activation mechanism of TiOx passivating layer on crystalline Si Reviewed

T. Mochizuki, K. Gotoh, A. Ohta, S. Ogura, Y. Kurokawa, S. Miyazaki, K. Fukutani, and N. Usami

Applied Physics Express   Vol. 11 ( 10 ) page： 102301 (4 pages)   2018.10

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma Reviewed

T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S3 ) page： 06KA05 (5 pages)   2018.6

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties Reviewed

T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S2 ) page： 06JE01 (5 pages)   2018.6

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He Reviewed

N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S3 ) page： 06KA01 (7 pages)   2018.6

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient Reviewed

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S1 ) page： 06HD08 (5 pages)   2018.6

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current Reviewed

A. Ohta, Y. Kato, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S1 ) page： 06HD05 (4 pages)   2018.6

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface Reviewed

A. Ohta, N. X. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 6S3 ) page： 06KA08 (6 pages)   2018.6

Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis Reviewed

N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 4S ) page： 04FB07 (5 pages)   2018.4

High thermal stability of abrupt SiO2/GaN interface with low interface state density Reviewed

N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 4S ) page： 04FG11 (5 pages)   2018.4

Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si + Ge) compositions Reviewed

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 4S ) page： 04FJ05 (6 pages)   2018.4

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements Reviewed

N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 1S ) page： 01AD02 (5 pages)   2018.1

Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma Reviewed

Y. Wen, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 57 ( 1S ) page： 01AF05 (4 pages)   2018.1

Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection Reviewed

K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki

Applied Physics Express   Vol. 11 ( 1 ) page： 011305 (4 pages)   2018.1

High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots Reviewed

H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

ECS Transactions   Vol. 86 ( 7 ) page： 131 - 138   2018

Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

Materials Science in Semiconductor Processing   Vol. 70   page： 183 - 187   2017.11

Magnetoelectronic transport of double stack FePt nanodots Reviewed

K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

Appl. Phys. Lett   Vol. 111 ( 5 ) page： 052403 (4 pages)   2017.7

Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy Reviewed

A. Ohta, M. Ikeda, K. Makihara, and S. Miyazakia

Microelectronic Engineering   Vol. 178   page： 85 - 88   2017.6

Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis Reviewed

A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki

Microelectronic Engineering   Vol. 178   page： 80 - 84   2017.6

Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation Reviewed

Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 56 ( 6S1 ) page： 06GG07 (4 pages)   2017.6

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors Reviewed

Y. Kato, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki

IEICE Transactions on Electronics   Vol. E100.C ( 5 ) page： 468 - 474   2017.5

Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces Reviewed

N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 56 ( 4S ) page： 04CB04 (6 pages)   2017.4

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface Reviewed

N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 56 ( 1S ) page： 01AF01 (5 pages)   2017.1

High-density formation of Ta nanodot induced by remote hydrogen plasma Reviewed

Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 56 ( 1S ) page： 01AE01 (4 pages)   2017.1

Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis Invited Reviewed

S. Miyazaki, A. Ohta, and N. Fujimura

ECS Transactions   Vol. 80 ( 1 ) page： 229 - 235   2017

Photoemission Study of Gate Dielectrics on Gallium Nitride Invited Reviewed

S. Miyazaki, N. X. Truyen, A. Ohta, and T. Yamamoto

ECS Transactions   Vol. 79 ( 1 ) page： 119 - 127   2017

Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices Invited Reviewed

S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda

ECS Transactions   Vol. 80 ( 4 ) page： 167 - 172   2017

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature Reviewed

K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda, and S. Miyazaki

Scientific Reports   Vol. 6   page： 33409 (7 pages)   2016.9

Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy Reviewed

N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 55 ( 8S2 ) page： 08PC06 (5 pages)   2016.8

Impact of embedded Mn nanodots on resistive switching characteristics of Si-rich oxides as measured in Ni-electrode metal–insulator–metal diodes Reviewed

T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 55 ( 6S1 ) page： 06GH07 (5 pages)   2016.6

Bonding and Electron Energy-Level Alignment at Metal/TiO2 Interfaces: A Density Functional Theory Study Reviewed

H. Chen, P. Li, N. Umezawa, H. Abe, J. Ye, K. Shiraishi, A. Ohta, and S. Miyazaki

The Journal of Physical Chemistry   Vol. 120 ( 10 ) page： 5549 - 5556   2016.3

Evaluation of field emission properties from multiple-stacked Si quantum dots Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

Thin Solid Films   Vol. 602   page： 68 - 71   2016.3

Study on electroluminescence from multiply-stacking valency controlled Si quantum dots Reviewed

T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

Thin Solid Films   Vol. 602   page： 48 - 51   2016.3

Photoluminescence study of high density Si quantum dots with Ge core Reviewed

K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki

Journal of Applied Physics   Vol. 119 ( 3 ) page： 033103 (5 pages)   2016.1

Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma Reviewed

H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 55 ( 1S ) page： 01AE20 (4 pages)   2016.1

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer Reviewed

Z. Sun, A. Ohta, S. Miyazaki, K. Nagamatsu, H. Lee, M. Olsson, Z. Ye, M. Deki, Y. Honda, and H. Amano

Jpn. J. Appl. Phys.   Vol. 55 ( 1 ) page： 010303 (3 pages)   2016.1

Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons Reviewed

T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

ECS Transactions   Vol. 75 ( 8 ) page： 777 - 783   2016

Processing and characterization of Si/Ge quantum dots Reviewed

S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda

2016 IEEE International Electron Devices Meeting (IEDM)     page： 826 (33.2.1) - 830 (33.2.4)   2016

Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core Reviewed

K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

ECS Transactions   Vol. 75 ( 8 ) page： 695 - 700   2016

High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties Reviewed

R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda, and S. Miyazaki

Transactions of the Materials Research Society of Japan   Vol. 40 ( 4 ) page： 347-350   2015.12

Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy Reviewed

A. Ohta, K. Makihara, and S. Miyazaki

Microelectronic Engineering   Vol. 147   page： 264-268   2015.11

Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons Reviewed

A. Ohta, H. Murakami, K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 54 ( 6S1 ) page： 06FH08 (5 pages)   2015.6

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Reviewed

A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E98.C ( 5 ) page： 406-410   2015.5

High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100) Invited Reviewed

S. Miyazaki, and A. Ohta

ECS Transactions   Vol. 69 ( 10 ) page： 165-170   2015

Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure Reviewed

H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

ECS Transactions   Vol. 69 ( 10 ) page： 179-186   2015

Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots Reviewed

Y. Kato, T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

ECS Transactions   Vol. 69 ( 10 ) page： 291-298   2015

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization Reviewed

K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 53 ( 11S ) page： 11RA02 (4 pages)   2014.11

Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory Reviewed

S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto, and K. Takase

AIP Advances   Vol. 4 ( 8 ) page： 087110 (7 pages)   2014.8

Selective Growth of Self-Assembling Si and SiGe Quantum Dots Reviewed

K. Makihara, M. Ikeda, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E97.C ( 5 ) page： 393-396   2014.5

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi

IEICE Transactions on Electronics   Vol. E97.C ( 5 ) page： 397-400   2014.5

Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100) Reviewed

H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi, and S. Miyazaki

ECS Transactions   Vol. 64 ( 6 ) page： 423-429   2014

Photoluminescence Study of Si Quantum Dots with Ge Core Reviewed

K. Makihara, K. Kondo, M. Ikeda, A. Ohta, and S. Miyazaki

ECS Transactions   Vol. 64 ( 6 ) page： 365-370   2014

Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack Reviewed

A. Ohta, H. Murakami, K. Hashimoto, K. Makihara, and S. Miyazaki

ECS Transactions   Vol. 64 ( 6 ) page： 241-248   2014

Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

ECS Transactions   Vol. 64 ( 6 ) page： 923-928   2014

Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes Reviewed

A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys   Vol. 52 ( 11S ) page： 11NJ06 (5 pages)   2013.11

Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots Reviewed

K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys   Vol. 52 ( 11S ) page： 11NA04 (3 pages)   2013.11

Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM Reviewed

N. Tsunekawa K. Makihara, M. Ikeda, and S. Miyazaki

Trans. of MRS-J   Vol. 38 ( 3 ) page： 393 - 396   2013.9

XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100) Reviewed

A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki

Trans. of MRS-J   Vol. 38 ( 3 ) page： 353 - 357   2013.9

High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma Reviewed

H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, and S. Miyazaki

Advanced Materials Research   Vol. 750-752   page： 1011 - 1015   2013.8

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Reviewed

M. Ikeda, K. Makihara, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 694 - 698   2013.5

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Reviewed

K. Hashimoto, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 674 - 679   2013.5

X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures Reviewed

A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba, and J. Murota

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 680 - 685   2013.5

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Reviewed

A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 702 - 707   2013.5

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System Reviewed

M. Fukushima, A. Ohta, K. Makihara, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 708 - 713   2013.5

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi

IEICE Transactions on Electronics   Vol. E96-C ( 5 ) page： 718 - 721   2013.5

Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots Reviewed

H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 52 ( 4S ) page： 04CG08 (4 pages)   2013.4

Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System Reviewed

A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki

Journal of Physics: Conference Series   Vol. 417 ( 15th International Conference on Thin Films (ICTF-15) 8–11 November 2011, Kyoto, Japan ) page： 012012 (6 pages)   2013.3

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods Reviewed

K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi, and S. Miyazaki

Journal of Physics: Conference Series   Vol. 417 ( 15th International Conference on Thin Films (ICTF-15) 8–11 November 2011, Kyoto, Japan ) page： 012013 (6 pages)   2013.3

Kinetics of thermally oxidation of Ge(100) surface Reviewed

S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi, and S. Miyazaki

Journal of Physics: Conference Series   Vol. 417 ( 15th International Conference on Thin Films (ICTF-15) 8–11 November 2011, Kyoto, Japan ) page： 012014 (6 pages)   2013.3

Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application Reviewed

S. Miyazaki

MRS Online Proceedings Library   Vol. 1510 ( 2 )   2013.2

Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Reviewed

A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S. Miyazaki

ECS Transactions   Vol. 58 ( 9 ) page： 293 - 300   2013

Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application Invited Reviewed

S. Miyazaki, M. Ikeda, and K. Makihara

ECS Transactions   Vol. 58 ( 9 ) page： 231 - 237   2013

Study of electron transport characteristics through self-aligned Si-based quantum dots Reviewed

K. Makihara, M. Ikeda, and S. Miyazaki

J. Appl. Phys.   Vol. 112 ( 10 ) page： 104301 (5 pages)   2012.11

Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy Reviewed

K. Makihara, H. Deki, M. Ikeda, and S. Miyazaki

Journal of Non-Crystalline Solids   Vol. 358 ( 17 ) page： 2086-2089   2012.9

Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes Reviewed

A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 51 ( 6S ) page： 06FF02 (6 pages)   2012.6

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering Reviewed

A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E95.C ( 5 ) page： 879-884   2012.5

Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density Reviewed

K. Makihara, H. Deki, M Ikeda, and S, Miyazaki

Jpn. J. Appl. Phys   Vol. 51 ( 4S ) page： 04DG08 (5 pages)   2012.4

Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion Reviewed

A. Ohta, M. Matsui, H. Murakami, S. Higashi, and S. Miyazaki

ECS Transactions   Vol. 50 ( 9 ) page： 449-457   2012

Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes Reviewed

K. Makihara, M. Fukushima, A. Ohta, M. Ikeda, and S. Miyazaki

ECS Transactions   Vol. 50 ( 9 ) page： 459-464   2012

Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide Reviewed International journal

A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 10S ) page： 10PH02 (6 pages)   2011.10

X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide Reviewed International journal

A. Ohta, T. Fujioka, H. Murakami, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 10S ) page： 10PE01 (6 pages)   2011.10

Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory Reviewed International journal

K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 8S2 ) page： 08KE06 (4pages)   2011.8

Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy Reviewed International journal

M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi, and S. Miyazaki

Microelectronic Engineering   Vol. 88 ( 7 ) page： 1549-1552   2011.7

Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics Reviewed International journal

G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, and S. Miyazaki

Microelectronic Engineering   Vol. 88 ( 7 ) page： 1152-1154   2011.7

The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics Reviewed International journal

A. Ohta, Y. Goto, M. F. Kazalman, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 6S ) page： 06GG01 (5 pages)   2011.6

High-density formation of Ge quantum dots on SiO2 Reviewed International journal

K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, and S. Miyazaki

Solid-State Electronics   Vol. 60 ( 1 ) page： 65-69   2011.6

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities Reviewed International journal

A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E94.C ( 5 ) page： 717-723   2011.5

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure Reviewed International journal

G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E94.C ( 5 ) page： 699-704   2011.5

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Reviewed International journal

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, and T. Endoh

IEICE Transactions on Electronics   Vol. E94.C ( 5 ) page： 730-736   2011.5

Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation Reviewed International journal

K. Matsumoto, A. Ohta, S. Miyazaki, and S. Higashi

Jpn. J. Appl. Phys.   Vol. 50 ( 4S ) page： 04DA07 (4 pages)   2011.4

Native Oxidation Growth on Ge(111) and (100) Surfaces Reviewed International journal

S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 4S ) page： 04DA12 (4 pages)   2011.4

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed International journal

M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh

Jpn. J. Appl. Phys.   Vol. 50 ( 4S ) page： 04DD04 (4 pages)   2011.4

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication Reviewed International journal

S. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 50 ( 3S ) page： 03CB10 (8 pages)   2011.3

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures Reviewed International journal

N. Morisawa, M. Ikeda, K. Makihara, and S. Miyazaki

Key Engineering Materials   Vol. 470   page： 135-139   2011.2

Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices Invited Reviewed International journal

S. Miyazaki

ECS Transactions   Vol. 41 ( 7 ) page： 93-98   2011

Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices Reviewed International journal

M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta

Physica E: Low-dimensional Systems and Nanostructures   Vol. 42 ( 10 ) page： 2602 - 2605   2010.9

Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma Reviewed International journal

A. Kawanami, K. Makihara, M. Ikeda, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 8S1 ) page： 08JA04 (4 pages)   2010.8

Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon Reviewed International journal

H. Itokawa, A. Ohta, M. Ikeda, I. Mizushima, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 8R ) page： 081301 (5 pages)   2010.8

Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication Reviewed International journal

S. Hayashi, S. Higashi, H. Murakami and S. Miyazaki

Applied Physics Express   Vol. 3 ( 6 ) page： 061401 (3 pages)   2010.6

Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique Reviewed International journal

K. Makihara, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 6R ) page： 065002 (4 pages)   2010.6

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Reviewed International journal

K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki

IEICE Transactions on Electronics   Vol. E93.C ( 5 ) page： 569 - 572   2010.5

Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation Reviewed International journal

K. Matsumoto, S. Higashi, H. Murakami, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 4S ) page： 04DA02 (4 pages)   2010.4

Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation Reviewed International journal

T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki

Phys. Status Solidi C   Vol. 7 ( 3-4 ) page： 732 - 734   2010.4

Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures Reviewed International journal

N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 4S ) page： 04DJ04 (4 pages)   2010.4

Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique Reviewed International journal

S. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 49 ( 3S ) page： 03CA08 (4 pages)   2010.3

Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure Reviewed International journal

K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

Journal of Optoelectronics and Advanced Materials   Vol. 12 ( 3 ) page： 626 - 630   2010.3

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots Reviewed International journal

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, and S. Miyazaki

Physica E: Low-dimensional Systems and Nanostructures   Vol. 42 ( 4 ) page： 918 - 921   2010.2

Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application Reviewed International journal

S. Miyazaki, K. Makihara, and M. Ikeda

Thin Solid Films   Vol. 518 ( 6 ) page： S30 - S34   2010.1

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Reviewed International journal

Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki

  Vol. 49 ( 1R ) page： 014001 (4 pages)   2010.1

Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application Reviewed International journal

S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

J. of Materials Science Forum   Vol. 638-642   page： 1725 - 1730   2010.1

Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals Reviewed International journal

H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi and S. Miyazaki

ECS Trans.   Vol. 33 ( 6 ) page： 253 - 262   2010

Self-Align Formation of Si Quantum Dots Reviewed International journal

K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki

ECS Trans.   Vol. 33 ( 6 ) page： 661 - 667   2010

Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid Reviewed International journal

T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki

ECS Trans.   Vol. 33 ( 6 ) page： 165 - 170   2010

Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100) Reviewed International journal

A. Ohta, D. Kanme, H. Murakami, S. Higashi, and S. Miyazaki

Microelectronic Engineering   Vol. 86 ( 7-9 ) page： 1650 - 1653   2009.7

Electron Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique Reviewed International journal

K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, and S. Miyazaki

Transactions of the Materials Research Society of Japan   Vol. 34 ( 2 ) page： 309 - 312   2009.6

Photoemission study of fully silicided Pd2Si gates with interface modification induced by dopants Reviewed International journal

T. Hosoi, A. Ohta, S. Miyazaki, H. Shiraish, K. Shibahara

Appl. Phys. Lett.   Vol. 94 ( 19 ) page： 192102 (3 pages)   2009.5

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Reviewed International journal

K. Shimanoe K. Makihara, M. Ikeda, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E92.C ( 5 ) page： 616 - 619   2009.5

Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection Reviewed International journal

J. Xu, K. Makihara, H. Dek, and S. Miyazaki

Solid State Communications   Vol. 149 ( 19-20 ) page： 739 - 742   2009.5

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs Reviewed International journal

M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, T. Chikyo, K. Yamada, T. Aoyama, Y. Nara, and Y. Ohji

IEEE Electron Device Letters   Vol. 30 ( 5 ) page： 466 - 468   2009.5

Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application Reviewed International journal

S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

Solid State Phenomena   Vol. 154   page： 95 - 100   2009.4

Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation Reviewed International journal

H. Furukawa, S. Higashi, T. Okada, H. Murakami, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 48 ( 4S ) page： 04C011 (4 pages)   2009.4

Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor Reviewed International journal

Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki

Journal of Physics: Conference Series   Vol. 150 ( Electronic Quantum Transport ) page： 022071 (4 pages)   2009.3

Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 surfaces Reviewed International journal

S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, and S. Miyazaki

ECS Trans.   Vol. 19 ( 22 ) page： 35 - 43   2009

Charge Storage Characteristics of Hybrid Nanodots Floating Gate Reviewed International journal

S. Miyazaki, K. Makihara, and M. Ikeda

ECS Trans.   Vol. 25 ( 7 ) page： 433 - 439   2009

Physics of Nano-contact between Si Quantum Dots and Inversion Layer Reviewed International journal

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, and K. Makihara

ECS Trans.   Vol. 25 ( 7 ) page： 463 - 469   2009

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics Reviewed International coauthorship International journal

J. Dąbrowski, S. Miyazaki, S. Inumiya, G. Kozłowski, G. Lippert, G. Łupina, Y. Nara, H. J. Müssig, A. Ohta, and Y. Pei

Materials Science Forum   Vol. 608   page： 55 - 109   2008.12

Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics Reviewed International journal

K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki

Thin Solid Films   Vol. 517 ( 1 ) page： 306 - 308   2008.11

Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 Reviewed International journal

T. Sakata, K. Makihara, H. Deki, S. Higashi, and S. Miyazaki

Thin Solid Films   Vol. 517 ( 1 ) page： 216 - 218   2008.11

Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed International journal

S. Miyazaki, K. Makihara, and M. Ikeda

Thin Solid Films   Vol. 517 ( 1 ) page： 41 - 44   2008.11

Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique Reviewed International journal

T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, and M. Kondo

Jpn. J. Appl. Phys.   Vol. 47 ( 8S2 ) page： 6949 - 6952   2008.8

Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate Reviewed International journal

T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, and K. Shibahara

Surface and Interface Analysis   Vol. 40 ( 6-7 ) page： 1126 - 1130   2008.6

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM Reviewed International journal

K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki

IEICE Transactions on Electronics   Vol. E91.C ( 5 ) page： 712 - 715   2008.5

Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors Reviewed International journal

M. Sato, C. Tamura, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, R. Hasunuma, T. Aoyama, Y. Nara, and Y. Ohji

Jpn. J. Appl. Phys.   Vol. 47 ( 5R ) page： 3326 - 3331   2008.5

Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet Reviewed International journal

T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, and S. Miyazaki

Thin Solid Films   Vol. 516 ( 11 ) page： 3680 - 3683   2008.4

Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing Reviewed International journal

K. Sakaike, S. Higashi, H. Murakami, and S. Miyazaki

Thin Solid Films   Vol. 516 ( 11 ) page： 3595 - 3600   2008.4

Nucleation Study of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films Deposited by VHF-ICP Reviewed International journal

T. Karakawa, S. Higashi, H. Murakami, and S. Miyazaki

Thin Solid Films   Vol. 516 ( 11 ) page： 3497 - 3501   2008.4

Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases Reviewed International journal

R. Matsumoto, M. Ikeda, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 47 ( 4S ) page： 3103 - 3106   2008.4

Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics Reviewed International journal

K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 47 ( 4S ) page： 3099 - 3102   2008.4

Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm Reviewed International journal

M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, C. Tamura, R. Hasunuma, S. Inumiya, T. Aoyama, Y. Nara, and Y. Ohji

Jpn. J. Appl. Phys.   Vol. 47 ( 4S ) page： 2354 - 2359   2008.4

In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation Reviewed International journal

H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 47 ( 4S ) page： 2460 - 2463   2008.4

Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet Reviewed International journal

T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, and S. Miyazaki

Solid-State Electronics   Vol. 52 ( 3 ) page： 377 - 380   2008.3

Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 Reviewed International journal

K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, and S. Miyazaki

ECS Trans.   Vol. 16 ( 10 ) page： 255 - 260   2008

In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing Reviewed International journal

H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki

ECS Trans.   Vol. 13 ( 1 ) page： 31 - 36   2008

Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory Reviewed International journal

T. Okada, S. Higashi, H. Kaku, H. Furukawa, and S. Miyazaki

ECS Trans.   Vol. 16 ( 9 ) page： 177 - 182   2008

Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits- Reviewed International journal

K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, and S. Miyazaki

ECS Trans.   Vol. 13 ( 2 ) page： 21 - 27   2008

Photoemission Study of Metal/HfSiON Gate Stack Reviewed International journal

S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima, and Y. Nara

ECS Trans.   Vol. 13 ( 2 ) page： 67 - 73   2008

Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process Reviewed International journal

K. Yamabe, K. Murata, T. Hayashi, T C. Tamura, M. Sato, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, and R. Hasunuma

ECS Trans.   Vol. 16 ( 5 ) page： 521 - 526   2008

Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gate

M. Kadoshima, T. Matsuki, M. Sato, T. Aminaka, E. Kurosawa, A. Ohta, H. Yoshinaga, S. Miyazaki, K. Shiraishi, K. Yamabe, K. Yamada, T. Aoyama, Y. Nara, Y. Ohji

International Electron Device Meeting 2007 (IEDM)(Washington DC)   Vol. 20.4   page： 531-534   2007.12

Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms Reviewed

K. Iwamoto, T. Nishimura1, A. Ohta2, K. Tominaga, T. Nabatame, S. Miyazaki2, and A. Toriumi1,3

Jpn. J. Appl. Phys.   Vol. 46   page： 7666-7670   2007.12

Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization Technique

T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, M. Kondo

2007 Int. Symposium on Dry Process (DPS2007)(Tokyo)   Vol. 8-03   page： 157-158   2007.11

Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors

M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi, S. Miyazaki

3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai)   Vol. P-08   page： 35-36   2007.11

High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H2-diluted GeH4

S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda

3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai)   Vol. P-07   page： 33-34   2007.11

Formation of PtSi Nanodots Induced by Remote H2 Plasma

K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi, S. Miyazaki

3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai   Vol. P-09   page： 37-38   2007.11

Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack

A. Ohta, H. Yoshinaga, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima, Y. Nara

Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. OA3-1   page： 215-216   2007.11

Evaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures – Thickness Dependence in Bottom SiO2 layer

H. Yoshinaga, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima, Y. Nara,

Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. P.-47   page： 181-182   2007.11

The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3

R. Yougauchi, A. Ohta, Y. Munetaka, H. Murakami, S. Higashi, S. Miyazaki

Fifth International Symposium on Control of Semiconductor Interfaces, (ISCSI-V)(Tokyo)   Vol. OA3-8   page： 227-228   2007.11

High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films

H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki

5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. OA1   page： 51-52   2007.11

High Rate Growth of Highly-Crystallized Ge Films on Quartzfrom VHF Inductively-Coupled Plasma of GeH4 + H2 Reviewed

T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

Materials Science Forum   Vol. 561-565   page： 1209-1212   2007.10

Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique Reviewed

R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda,H. Murakami, S. Higashi and S. Miyazaki

Materials Science Forum   Vol. 561-565   page： 1213-1216   2007.10

Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics

K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi, S. Miyazaki

2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. I-8-1   page： 1108-1109   2007.9

Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots

K. Okuyama, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. E-1-4   page： 106-107   2007.9

In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki

Solid State Device and Materials (SSDM2007)(Tsukuba)   Vol. P-1-27L   page： 376-377   2007.9

Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases

R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki

2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. I-8-3   page： 1112-1113   2007.9

Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films

H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki

The Fourteenth International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES(Awaji)   Vol. 3-3   page： 33-36   2007.7

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM

K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) (Korea)   Vol. J-R22W   page： 251-254   2007.6

Phosphorus Doping to Si Quantum Dots for Floating Gate Application

K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi, S. Miyazaki

2007 Silicon Nanoelectronics Workshop(Kyoto)   Vol. 5-3   page： 161-162   2007.6

Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS

M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

The 2008 Symposium on VLSI Technology(Kyoto)   Vol. 5A-1   page： 66-67   2007.6

Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack

A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

15th biannual Conference on Insulating Films on Semiconductors 2007 (INFOS2007)(Greece)   Vol. session7 7.36   page： 251-254   2007.6

Impact of Boron Doping to Si Quantum Dots on Light Emission Properties

K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki

2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) (Korea)   Vol. J-R23M   page： 135-138   2007.6

Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics Reviewed

N. Umezawa1, K. Shiraishi2,1, S. Miyazaki3, T. Ohno1, T. Chikyow1, K. Yamada4,1, and Y. Nara5

Jpn. J. Appl. Phys.   Vol. 46   page： 3507-3509   2007.6

Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics

K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

5th International Conference on Silicon Epitaxy and Heterostructures(France)   Vol. 22P 2-15   page： 313-314   2007.5

Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams Reviewed

Akira Uedono, Tatsuya Naito, Takashi Otsuka, Kenichi Ito, Kenji Shiraishi, Kikuo Yamabe, Seiichi Miyazaki1, Heiji Watanabe2, Naoto Umezawa3, Toyohiro Chikyow3, Toshiyuki Ohdaira4, Ryoichi Suzuki4, Yasushi Akasaka5,, Satoshi Kamiyama5, Yasuo Nara5, and Keisaku Yamada6

Jpn. J. Appl. Phys.   Vol. 46   page： 3214-3218   2007.5

Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4

T. Sakata, K. Makihara, H. Deki, S. Higashi, S. Miyazaki

5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)(France)   Vol. 21P1-7   page： 214-215   2007.5

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots Reviewed

J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

Solid State Phenomena   Vol. 121-123   page： 557-560   2007.5

Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2

K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi, S. Miyazaki,

The 2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)(Osaka)   Vol. PB-5   page： 121-122   2007.4

Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON Reviewed

Naoto Umezawa, Kenji Shiraishi1, Seiichi Miyazaki2, Akira Uedono1, Yasushi Akasaka3, Seiji Inumiya3, Ryu Hasunuma1, Kikuo Yamabe1, Hiroyoshi Momida4, Takahisa Ohno4, Kenji Ohmori, Toyohiro Chikyow, Yasuo Nara3, and Keisaku Yamada5

Jpn. J. Appl. Phys.   Vol. 46   page： 1891-1894   2007.4

Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation Reviewed

Kohei Sakaike, Seiichiro Higashi, Hirotaka Kaku, Hideki Murakami, and Seiichi Miyazaki

Jpn. J. Appl. Phys.   Vol. 46   page： 1276-1279   2007.3

Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Its Application

S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki

5th International Symposium Nanotechnology (JAPAN NANO 2007)(Tokyo)   Vol. P3-2   page： 144-145   2007.2

Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films

S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, S. Miyazaki

3rd International TFT Conference(Italy)   Vol. P21   page： 204-207   2007.1

Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet

T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H.Murakami, S. Miyazaki

3rd International TFT Conference(Italy)   Vol. 5a.3   page： 82-85   2007.1

Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference, Rome, Italy, Jan.

S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, S. Miyazaki,

3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, P21, pp     page： 204-207.   2007.1

Theoretical Studies on Metal/High-k Gate Stacks

K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada

ECS Trans.   Vol. 6 ( 1 ) page： 191-204   2007

Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

K. Sakaike, S. Higashi, H. Kaku, H. Murakami, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 46 ( 3B ) page： 1276-1279   2007

Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet

T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki

Thin Solid Films   Vol. 515   page： 4897-4900   2007

Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation

T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki, T. Sameshima

Trans. of MRS-J   Vol. 32 ( 2 ) page： 465-468   2007

Performance Improvement of HfAlOxN n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms

K. Iwamoto, T. Nishimura, A. Ohta, K. Tominaga, T. Nabatame, S. Miyazaki, A. Toriumi

Jpn. J. Appl. Phys.   Vol. 46 ( 12 ) page： 7666-7670   2007

Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

A. Uedono, S. Inumiya, T. Matsuki, T. Aoyama, Y. Nara, S. Ishibashi, T. Ohdaira, R. Suzuki, S. Miyazaki, K. Yamada

J. Appl. Phys   Vol. 102   page： 054511-1 – 054511-7   2007

Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes

M. Kadoshima, Y. Suginta, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

ECS Trans.   Vol. 11 ( 4 ) page： 169-180   2007

Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack

A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

Microelec. Eng.   Vol. 84   page： 2386-2389   2007

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

S. Miyazaki, M. Ikeda, K. Makihara

ECS Trans.   Vol. 11 ( 6 ) page： 233-243   2007

Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique

R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

Materials Science Forum   Vol. 561-565   page： 1213-1216   2007

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, S. Miyazaki

Solid State Phenomena   Vol. 121-123   page： 557-560   2007

Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams

A. Uedono, R. Hasumuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanab, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada

ECS Trans.   Vol. 11 ( 4 ) page： 81-90   2007

Role of the Ionicity in Defect Formation in Hf-based Dielectrics

N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, A. Oshiyama, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara, K. Yamada

ECS Trans.   Vol. 11 ( 4 ) page： 199-211   2007

Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasumuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

ECS Trans.   Vol. 11 ( 4 ) page： 3-11   2007

Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

1. A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe

J. Appl. Phys.   Vol. 100   page： 064501-1 – 064501-5   2006

Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 45 ( 5B ) page： 4313-4320   2006

Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate

T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 45 ( 5B ) page： 4355-4357   2006

In-Situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure

A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, T. Sameshima

Thin Solid Films   Vol. 508   page： 53-56   2006

High-rate Growth of Highly-crystallized Si Films from VHF Inductively-Coupled Plasma CVD

N. Kosku, S. Miyazaki

Thin Solid Films   Vol. 511-512   page： 265-270   2006

The Application of Very High Frequency Inductively-coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films

N. Kosku, S. Miyazaki

J. Non-Cryst. Solid   Vol. 352   page： 911-914   2006

Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4

T. Sakata, K. Makihara, S. Higashi, S. Miyazaki

Thin Solid Films   Vol. 515 ( 12 ) page： 4971-4974   2006

An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy

N. Umezawa, K. Shiraishi, Y. Akasaka, S. Inumiya, A. Uedono, S. Miyazaki, T. Chikyow, T.Ohno, Y. Nara, K. Yamada

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 129-132   2006

Photoemission Study of Ultrathin HfSiON/Si(100) Systems

A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 125-128   2006

Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

Jour. of Sur. Sci. and Nanotech.   Vol. 4   page： 174-179   2006

Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties

H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi, S. Miyazaki

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 157-160   2006

Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience

H. Nakagawa, A. Ohta, M. Taira, H. Abe, H. Murakami, S. Higashi, S. Miyazaki

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 153-156   2006

Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiN/poly-Si

M. Taira, A. Ohta, H. Nakagawa, S. Miyazaki, K. Yoneda, M. Horikawa, K. Koyama

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 149-152   2006

Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy

Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page： 145-148   2006

Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

S. Miyazaki, A. Ohta, S. Inumiya, Y. Nara, K. Yamada

ECS Trans.   Vol. 3 ( 3 ) page： 171-180   2006

Physics of Metal/High-k Interfaces

T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, A. Ohta, H. Iwai, K. Yamada, T. Nakaoka

Physics of Metal/High-k Interfaces   Vol. 3 ( 3 ) page： 129-140   2006

Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs

T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, S. Miyazaki

Trans. of MRS-J   Vol. 31 ( 1 ) page： 137-140   2006

Study of Charged States of Si Quantum Dots with Ge Core

K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

ECS Trans.   Vol. 3 ( 7 ) page： 257-262   2006

Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories

S. Miyazaki, M. Ikeda and K. Makihara

ECS Trans.   Vol. 2 ( 1 ) page： 157-164   2006

Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices

K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, S. Miyazaki

Trans. of MRS-J   Vol. 31 ( 1 ) page： 133-136   2006

Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique

J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

Thin Solid Films   Vol. 508 ( 1-2 ) page： 190-194   2006

Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

Thin Solid Films   Vol. 508 ( 1-2 ) page： 186-189   2006

Characterization of HfSiON gate dielectrics using monoenergetic positron beams

1. A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow

J. Appl. Phys.   Vol. 99   page： 054507-1 – 054507-6   2006

Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment

K. Makihara, H. Deki, H. Murakami, S. Higasi, S. Miyazaki

Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page： 75-78   2005

Influence of Substrate dc Bias on Crystallinity of Silicon Films Grown at a High Rate from Inductively-coupled Plasma CVD

N. Kosku, H. Murakami, S. Higashi, S. Miyazaki

Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page： 39-42   2005

A New Crystallization Technique of Si Films on Glass Substrate Using Thermal Plasma Jet

H. Kaku, S. Higashi, H. Taniguchi, H. Murakami, S. Miyazaki

Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page： 8-11   2005

Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique

K. Makihara, Y. Okamoto, H. Murakami, S. Higashi, S. Miyazaki

IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page： 705-708   2005

Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD

Y. Okamoto, K. Makihara, H. Murakami, S. Higasi, S. Miyazaki

Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page： 12-15   2005

Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors

Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 205-208   2005

Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors

S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara, K. Torii

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 197-200   2005

The Role of Oxygen-related Defects on the Reliabilities of HfO2-based High-k Gate Insulators

K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima, T. Arikado

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 191-195   2005

Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy

F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa, K. Koyama

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 213-217   2005

Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack

Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, Y. Nara

ECS Trans.   Vol. 1 ( 1 ) page： 163-172   2005

Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama, S. Miyazaki

IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page： 640-645   2005

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate

H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi, S. Miyazaki

IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page： 646-650   2005

Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy

F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa, K. Koyama

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 213-217   2005

Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors

S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara, K. Torii

Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page： 197-200   2005

Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures

S. Miyazaki, T. Shibaguchi, M. Ikeda

Mat. Res. Soc. Symp. Proc.   Vol. 830   page： 249-254   2005

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots

T. Shibaguchi, M. Ikeda, H. Murakami, S. Miyazaki

IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page： 709-712   2005

Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor

S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando, T. Sameshima

Jpn. J. Appl. Phys.   Vol. 44 ( 3 ) page： L108-L110   2005

Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet

S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, S. Miyazaki

Thin Solid Films   Vol. 487   page： 122-125   2005

Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet

S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, S. Miyazaki

Thin Solid Films   Vol. 487   page： 122-125   2005

High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD

N. Kosku, S. Miyazaki

Trans. of MRS-J   Vol. 30 ( 1 ) page： 279-282   2005

Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique

H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh, T. Sameshima

Trans. of MRS-J   Vol. 30 ( 1 ) page： 283-286   2005

Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core

Y. Darma, Hideki Murakami, S. Miyazaki

Appl. Surf. Sci.   Vol. 224   page： 156-159   2004

New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors

A. Teshima, S. Miyazaki,

Jpn. J. Appl. Phys.   Vol. 43 ( 8A ) page： 5129-5133   2004

Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe

K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

Thin Solid Films   Vol. 457   page： 103-108   2004

Analysis of Soft Breakdown of 2.6-4.9nm-Thick Gate Oxides

W. Mizubayashi, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 43 ( 10 ) page： 6925-6929   2004

Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8nm-thick Gate Oxides, IEEE Electron Device Lett.

W. Mizubayashi, Y. Yoshida, H. Murakami, S. Miyazaki, M. Hirose

IEEE Electron Device Lett   Vol. 25 ( 5 ) page： 305-307   2004

Praseodymium silicate formed by postdeposition high-temperature annealing

A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, S. Miyazaki

Appl. Phys. Lett.   Vol. 85 ( 22 ) page： 5322-5324   2004

Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)

A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 43 ( 11B ) page： 7831-7836   2004

Photoelectron Spectroscopy of ultrathin yttrium oxide films on Si(100)

A. Ohta, M. Yamaoka, S. Miyazaki

Microelec. Eng.   Vol. 72   page： 154-159   2004

Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100)

H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki

Jpn. J. Appl. Phys.   Vol. 43 ( 11B ) page： 7890-7894   2004

Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2 Reviewed

S. Miyazaki, K. Morino and M. Hirose

Solid State Phenomena   Vol. 76-77   page： 149-152   2001

プラズマ・核融合学会誌 熱プラズマによるアモルファスシリコンの結晶化,「講座 熱流を伴う反応性プラズマを用いた材料合成プロセス　3．結晶化・相変化制御への応用」

東　清一郎, 宮崎　誠一（ Role： Joint author）

2009 

次世代半導体メモリの最新技術 第6章分担執筆：「シリコン系ナノ構造集積と機能メモリデバイス開発」

（ Role： Sole author）

シーエムシー出版  2009 

プラズマ・核融合学会誌85(3) 熱プラズマによるアモルファスシリコンの結晶化,「講座 熱流を伴う反応性プラズマを用いた材料合成プロセス　3．結晶化・相変化制御への応用」

東　清一郎, 宮崎　誠一（ Role： Joint author）

プラズマ・核融合学会  2009 

実用薄膜プロセス―機能創製・応用展開― 第1編「創製技術」第5章「CVD」

（ Role： Sole author）

技術教育出版社  2009 

究極のかたちをつくる 第1章分担執筆：「ナノサイズのかたちをつくる」

（ Role： Sole author）

日刊工業新聞社  2009 

薄膜ハンドブック 第II編 第1章　1.3.4 CVD(編集・分担執筆　)

宮崎 誠一（ Role： Sole author）

Ohmsha  2008 

表面科学の基礎と応用(第3編、第1章・第2節)

（ Role： Joint author）

エヌ・ティー・エス  2004 

Fe超薄膜へのSiH4照射によるシリサイド化反応制御

斎藤 陽斗、牧原 克典、王 子璐、田岡 紀之、大田 晃生、宮﨑 誠一

第70回応用物理学会春季学術講演会  2023.3.16 

Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析 International coauthorship

酒井 大希、松下 圭吾、大田 晃生、田岡 紀之、牧原 克典、山本 裕司、宮﨑 誠一

第70回応用物理学会春季学術講演会  2023.3.16 

SiO2上への極薄ニッケルシリサイド膜形成―Si/Ni/Si初期構造における膜厚依存性―

木村 圭佑、田岡 紀之、西村 駿介、大田 晃生、牧原 克典、宮﨑 誠一

第70回応用物理学会春季学術講演会  2023.3.16 

Impact of O2 Annealing on Electronic States of p-type GaN(0001) Surface International conference

Z. Zhou, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki

15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023)  2023.3.7 

Characterization of Light Emission Properties of Superatom-like Ge-core/Si-shell Quantum Dots International coauthorship International conference

K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack, and S. Miyazaki

15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023)  2023.3.6 

Electroluminescence from High Density Ge/Si Quantum Dots on Sub-micron Patterned Si Wires International conference

Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki

15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023)  2023.3.6 

Study on Electronic Charged States of Ultrahigh Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique

2023.2.3 

Control of Surface Flatness and Crystallinity of Al/Si(111) Structure and Formation of Ultrathin Si Layer by Segregation

2023.2.3 

Effect of Thickness of Thin Nickel Silicide Films Formed on SiO2 on Surface Morphology and Crystalline Phases

2023.2.3 

Formation of NiGe Thin Film on SiO2 and Its Electrical and Electronic Properties

2023.2.3 

Study on Device Process for Ultrathin Ge Crystal Formed by Segregation Using Metal-Ge Eutectic Reaction

2023.2.3 

Structural and Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots International coauthorship

2023.2.3 

Ultrathin Si Segregated Layer Formation on Al/Si(111) International conference

T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.24