Updated on 2021/05/10

写真a

 
MIYAZAKI, Seiichi
 
Organization
Graduate School of Engineering Electronics 2 Professor
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Dr. of Engineering ( 1986.3   Hiroshima University ) 

Research Interests 8

  1. 半導体ナノ構造

  2. 量子ドット

  3. High-k/メタルゲート

  4. 薄膜太陽電池

  5. 薄膜トランジスタ

  6. 抵抗変化メモリ

  7. フローティングゲートメモリデバイス

  8. 極微細MOSトランジスタ

Research Areas 2

  1. Others / Others  / Electronic Device/Electronic Equipment

  2. Others / Others  / Electron/Electric Material Engineering

Current Research Project and SDGs 3

  1. 半導体表面・界面の物性制御に関する研究

  2. 極微細MOSトランジスタおよび量子機能デバイスに関する研究

  3. 高効率太陽電池および高性能薄膜トランジスタ開発のためのシリコン系薄膜の研究

Research History 14

  1. Nagoya University   Professor

    2010.6

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    Country:Japan

  2. Nagoya University

    2021.4

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    Country:Japan

  3. Nagoya University   Synchrotron Radiation Research Center   Director in General

    2019.4

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    Country:Japan

  4. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics   Professor

    2017.4

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    Country:Japan

  5. 産業技術総合研究所   窒化物半導体先進デバイスOIL(兼務)   客員研究員

    2017.5

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    Country:Japan

  6. Hiroshima University   客員教授

    2010.8

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    Country:Japan

  7. Nagoya University   Graduate School of Engineering

    2017.4 - 2019.3

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    Country:Japan

  8. 南京大学   電子科学与工程学院(兼務)   兼職教授

    2014.12 - 2017.11

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    Country:China

  9. 南京大学   電子科学与工程学院(兼務)   兼職教授

    2010.10 - 2013.10

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    Country:China

  10. University of Tsukuba

    2011.9 - 2015.3

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    Country:Japan

  11. Hiroshima University   Professor

    2002.4 - 2010.5

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    Country:Japan

  12. Hiroshima University

    2001.4 - 2002.3

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    Country:Japan

  13. Hiroshima University

    1992.4 - 2001.3

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    Country:Japan

  14. Hiroshima University   Assistant

    1986.4 - 1992.3

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    Country:Japan

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Education 3

  1. Hiroshima University   Graduate School, Division of Engineering

    1983.4 - 1986.3

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    Country: Japan

  2. Hiroshima University   Graduate School, Division of Engineering

    1981.4 - 1983.3

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    Country: Japan

  3. Hiroshima University   Faculty of Engineering

    1977.4 - 1981.3

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    Country: Japan

Professional Memberships 12

  1. 日本表面科学会   中部支部役員

    2011.5 - 2012.3

  2. 応用物理学会   理事

    2011.4

  3. 応用物理学会   国際委員会委員

    2009.4

  4. 電子情報通信学会   シリコン材料・デバイス研究専門委員会委員

    1998.4

  5. 応用物理学会   中国四国支部幹事

    1995.4 - 2011.3

  6. The Electrochemical Society

  7. Material Reseach Society

  8. 応用物理学会   シリコンテクノロジー分科会 幹事, 常任幹事, 副幹事長, 幹事長 1999-,2003-2004,2007-2008,2009-2010

  9. 応用物理学会   薄膜・表面物理分科会 幹事, 常任幹事 1997-,1998-1999

  10. 応用物理学会   代議員, 評議員, 2000-2003,2008-

  11. The Materials Research Society of Japan

  12. The Vacuum Society of Japan

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Committee Memberships 94

  1. (公益財団法人)立松財団   理事  

    2021.4 - 2023.3   

  2. (国立大学法人)東京農工大学   テニュア付与外部審査委員  

    2021.2 - 2021.3   

  3. The Electrochemical Society(ECS)日本支部   日本支部長  

    2021.1 - 2022.12   

  4. (公益社団法人)応用物理学会 2021年国際固体素子・材料コンファレンス(SSDM2021)   組織委員  

    2021.1 - 2021.12   

  5. (公益社団法人)応用物理学会 ISPlasma2021/IC-PLANTS2021組織委員会   編集委員会 委員  

    2021.1 - 2021.11   

  6. (公益社団法人)応用物理学会 ISPlasma2021/IC-PLANTS2021組織委員会   組織委員会 委員  

    2020.11 - 2021.3   

  7. (公益社団法人)応用物理学会 ISPlasma2021/IC-PLANTS2021組織委員会   プログラム委員会 委員  

    2020.11 - 2021.3   

  8. (公益財団法人)岐阜県産業経済振興センター   研究開発委員会 委員(アドバイザー)  

    2020.9 - 2023.3   

  9. (独立行政法人)日本学術振興会 R025先進薄膜界面機能創成委員会   委員  

    2020.6   

  10. (公益社団法人)応用物理学会 薄膜・表面物理分科会 電子デバイス界面テクノロジー研究会   運営委員  

    2020.5 - 2021.3   

  11. (公益社団法人)応用物理学会 薄膜・表面物理分科会 2021 IWDTF組織委員会   2021 IWDTF組織委員  

    2020.4 - 2021.11   

  12. 国際会議 Int. SiGe Technology and Device Meeting (ISTDM) 3rd 2021(Taipei))   諮問委員  

    2020   

  13. 第34回日本放射光学会年会・放射光科学合同シンポジウム(JSR2021)(開催日:2021年1月8-10日、開催形態:オンライン)   組織委員  

    2020 - 2021   

  14. ECS Trans. Vol. 98, No. 5 (2020)   学術論文編集委員  

    2020   

  15. 広島大学 HiSIM研究センター   人事選考委員会委員  

    2019.8 - 2020.4   

  16. (公益財団法人)科学技術交流財団   あいちシンクロトロン光センター運営委員会委員  

    2019.5 - 2021.5   

  17. (公益社団法人)応用物理学会 薄膜・表面物理分科会   顧問  

    2019.4   

  18. 東京医科歯科大学   生体医歯工学共同研究拠点運営委員会委員  

    2019.4 - 2022.3   

  19. 第33回日本放射光学会年会・放射光科学合同シンポジウム(JSR2020)(開催日:2020年1月10-12日、開催地:名古屋)   副実行委員長/プログラム委員/組織委員  

    2019 - 2020   

  20. (公益社団法人)日本工学教育協会   事業企画委員会委員  

    2018.6 - 2020.6   

  21. (公益社団法人)日本表面真空学会 中部支部   役員  

    2018.5   

  22. (独立行政法人)日本学術振興会 協力会   評議員  

    2018.5 - 2020.9   

  23. (公益財団法人)立松財団   選考委員  

    2018.3 - 2023.6   

  24. (公益社団法人)応用物理学会 東海支部   諮問委員  

    2017.4 - 2023.3   

  25. (公益社団法人)応用物理学会   応用物理学学術・教育奨励基金委員会委員  

    2015 - 2021.3   

  26. (独立行政法人)日本学術振興会 半導体界面制御技術第154委員会   委員長  

    2013.4 - 2020.6   

  27. 応用物理学会 第52期応用物理学委員会   講演会企画運営委員、講演奨励賞委員  

    2013.4 - 2014.4   

  28. ISPlasma2014組織委員会   組織委員、プログラム委員  

    2013.4 - 2014.3   

  29. DPS2013第35回ドライプロセスシンポジウム組織委員会   論文委員  

    2013.2 - 2014.11   

  30. 応用物理学会諮問委員会   諮問委員  

    2013.2 - 2014.2   

  31. 2013IWDTF組織委員会   組織委員  

    2012.10 - 2013.11   

  32. 応用物理学会 薄膜・表面物理分科会 第18回ゲートスタック研究会   運営委員  

    2012.4 - 2013.3   

  33. Int. Symp on Dry Process Symp. 2011   Vice-Chair  

    2012.4 - 2012.11   

  34. 応用物理学会    代議員  

    2012.2 - 2014.1   

  35. 高輝度光科学研究センターSPring-8成果審査委員会   査読者  

    2012.1 - 2014.3   

  36. 2012年国際固体素子・材料コンファレンス (SSDM2012)   論文委員長  

    2011.12 - 2012.12   

  37. ISPlasma2012組織委員会   プログラム委員会委員  

    2011.12 - 2012.4   

  38. 電子情報通信学会 エレクトロニクスソサイエティ英文論文誌編集委員会   編集委員  

    2011.9 - 2012.5   

  39. 日本学術振興会 薄膜第131委員会   企画委員  

    2011.7 - 2012.3   

  40. SPring-8利用研究課題審査委員会分科会   レフェリー  

    2011.6 - 2013.3   

  41. 応用物理学会 シリコンテクノロジー分科会   諮問委員  

    2011.4   

  42. (公益社団法人)応用物理学会 シリコンテクノロジー分科会   諮問委員  

    2011.4   

  43. 応用物理学会 講演会企画・運営委員会、講演奨励賞委員会   委員  

    2011.4 - 2013.3   

  44. 応用物理学会 東海支部   幹事  

    2011.4 - 2013.3   

  45. 応用物理学会    理事  

    2011.4 - 2013.3   

  46. 日本表面科学会 中部支部   中部支部役員  

    2011.4 - 2012.3   

  47. Int. Symp on Dry Process Symp. 2011   Vice-Chair  

    2011.4 - 2011.11   

  48. 応用物理学会 薄膜・表面物理分科会 第17回ゲートスタック研究会   運営委員  

    2011.3 - 2012.3   

  49.   国際会議諮問委員  

    2011.1 - 2012.3   

  50.   国際会議組織運営委員・国際会議実行委員  

    2011.1 - 2012.3   

  51. 第24回アモルファスおよびナノ結晶半導体国際会議組織運営委員会(ICANS24)   国際会議組織運営委員・出版委員  

    2011.1 - 2011.12   

  52.   国際会議組織運営委員  

    2011.1 - 2011.11   

  53. 第15回薄膜国際会議 組織委員会(ICTF-15)   国際会議組織運営委員  

    2011.1 - 2011.11   

  54. 国際会議 Int. Symp on Dry Process Symp. (DPS; 2005 - 2009, 2011~ )   プログラム委員  

    2011   

  55. 2011年国際固体素子・材料コンファレンス(SSDM2011)   国際会議プログラム委員・副委員長  

    2010.12 - 2011.12   

  56. 日本学術振興会 科学研究費委員会   専門委員  

    2010.12 - 2011.11   

  57. ISPlasma2011組織委員会   国際会議組織運営委員  

    2010.7 - 2011.4   

  58. Int. Symp on Dry Process Symp. (DPS2010)   Chair  

    2010.1 - 2010.12   

  59. 応用物理学会    2009年度支部学術講演会 実行委員長  

    2009.8   

  60. 応用物理学会 シリコンテクノロジー分科会   幹事長  

    2009.4 - 2011.3   

  61. 応用物理学会 国際委員会   委員  

    2009.4 - 2010.3   

  62. Int. Symp on Dry Process Symp. (DPS2009)   Vice-chair  

    2009.1 - 2009.12   

  63. 日本学術振興会 アモルファス・ナノ材料第147委員会   委員  

    2008.4   

  64. 日本学術振興会 半導体界面制御技術第154委員会   企画幹事長  

    2008.4 - 2013.3   

  65. 応用物理学会    評議員  

    2008.4 - 2010.3   

  66. 応用物理学会 シリコンテクノロジー分科会   副幹事長  

    2008.4 - 2010.3   

  67.   国際会議プログラム委員  

    2008.4 - 2009.4   

  68.   国際会議実行委員  

    2008.1 - 2008.12   

  69. (独立行政法人)日本学術振興会 アモルファス・ナノ材料第147委員会   委員  

    2008   

  70.   国際会議組織運営委員・国際会議実行委員  

    2007.1 - 2007.12   

  71. 第30回ドライプロセスシンポジウム組織委員会(DPS2008)   国際会議プログラム委員  

    2005.4 - 2009.11   

  72.   プログラム委員  

    2005.1   

  73. 日本学術振興会 半導体界面制御技術第154委員会   企画副幹事長  

    2004.4 - 2007.3   

  74.   国際会議諮問委員   

    2004.1 - 2004.12   

  75. 応用物理学会 シリコンテクノロジー分科会   常任幹事  

    2003.4 - 2005.3   

  76. 電気学会 システム集積プロセス調査専門委員会   委員  

    2003.3 - 2006.3   

  77.   国際会議実行委員  

    2003.1 - 2003.12   

  78. e-Journal of Surf. Sci. and Nanotechnology, Ed. Board Member   学術論文編集委員  

    2003   

  79. 日本学術振興会 半導体界面制御技術第154委員会   企画幹事  

    2001.4 - 2003.3   

  80.   プログラム委員  

    2000.4   

  81. 応用物理学会    代議員  

    2000.4 - 2003.3   

  82. 電気学会 グローバルインテグレーションプロセス調査専門委員会   委員  

    2000.3 - 2003.3   

  83. 応用物理学会 シリコンテクノロジー分科会   幹事  

    1999.4 - 2010.3   

  84. 日本学術振興会 薄膜第131委員会   庶務幹事  

    1999.4 - 2003.3   

  85. 応用物理学会    第59回応用物理学会学術講演会 現地実行委員  

    1998.9   

  86. (一般社団法人)電子情報通信学会 シリコン材料・デバイス研究専門委員会   SDM研究専門委員会 専門委員  

    1998.5 - 2021.6   

  87. 電気情報通信学会 シリコン材料・デバイス研究専門委員会   専門委員  

    1998.5 - 2013.5   

  88. 日本学術振興会 プラズマ材料科学第153委員会   委員  

    1998.4 - 2002.3   

  89. 応用物理学会 薄膜・表面分科会   常任幹事  

    1998.4 - 1999.3   

  90. 応用物理学会 薄膜・表面分科会   幹事  

    1997.4 - 1998.3   

  91. 電気学会 プロセス・インテグレーション調査専門委員会   委員  

    1997.3 - 2000.3   

  92. 応用物理学会 中国四国支部   幹事  

    1995.4 - 2010.3   

  93. 日本学術振興会 薄膜第131委員会   委員  

    1993.3 - 2011.3   

  94. (独立行政法人)日本学術振興会 薄膜第131委員会   委員  

    1993 - 2020.6   

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Awards 6

  1. ISPlasma2012 Best Presentation Award

    2011.3  

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    Country:Japan

  2. 応用物理学会 中国四国支部 貢献賞

    2010.7  

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    Country:Japan

  3. JSAP Fellow Award

    2009.9  

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    Country:Japan

  4. Selete Achievement Award

    2004.5  

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    Country:Japan

  5. Jpn. J. Appl. Phys. Editorial Contribution Award

    2003.4  

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    Country:Japan

  6. Inoue Research Award for Young Scientists

    1987.2  

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    Country:Japan

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Papers 399

  1. Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0) Reviewed

    J. Yuhara, H. Shimazu, M. Kobayashi, A. Ohta, S. Miyazaki, S. Takakura, M. Nakatake, and G. L. Lay

    Appl. Surf. Sci.   Vol. 550   page: 149236 (7 pages)   2021.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2021.149236

  2. Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal Reviewed

    A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 60 ( SB ) page: SBBK05 (6 pages)   2021.5

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abdad0

  3. Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy Reviewed

    A. Ohta, T. Imagawa, N. Taoka, M. Ikeda, K. Makihara and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 60 ( SA ) page: SAAC02 (6 pages)   2021.1

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abb75b

  4. Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core Reviewed

    K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki

    Materials Science in Semiconductor Processing   Vol. 120   page: 105250 (5 pages)   2020.12

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2020.105250

    Web of Science

  5. Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core Reviewed

    T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    Materials Science in Semiconductor Processing   Vol. 119 ( 15 ) page: 105215 (4 pages)   2020.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2020.105215

    Web of Science

  6. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode Reviewed

    T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ECS Transactions   Vol. 98 ( 5 ) page: 429-434   2020.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09805.0429ecst

  7. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing Reviewed

    H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

    ECS Transactions   Vol. 98 ( 5 ) page: 505-511   2020.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09805.0505ecst

  8. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe Reviewed

    J. Wu, H. Zhang, H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

    ECS Transactions   Vol. 98 ( 5 ) page: 493-498   2020.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09805.0493ecst

  9. Complex dielectric function of Si oxide as evaluated from photoemission measurements Reviewed

    A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 59 ( SM ) page: SMMB04 (8 pages)   2020.7

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab8c99

    Web of Science

  10. Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface Reviewed

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, N. Taoka, T. Simizu, M. Ikeda, K. Makihara, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 59 ( SG ) page: SGGK15 (6 pages)   2020.4

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab69de

    Web of Science

  11. Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures Reviewed

    Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    DOI: 10.7567/1347-4065/ab26ac

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  12. Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure Reviewed

    Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    DOI: 10.7567/1347-4065/ab23f9

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  13. Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core Reviewed

    Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    DOI: 10.7567/1347-4065/ab0c7a

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  14. Impact of remote plasma oxidation of a GaN surface on photoluminescence properties Reviewed

    Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab09c9

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  15. Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots Reviewed

    Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E102C ( 6 ) page: 458-461   2019.6

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    DOI: 10.1587/transele.2018FUP0007

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  16. Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy Reviewed

    Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

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    DOI: 10.7567/1347-4065/aaeb38

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  17. Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core Reviewed

    Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 33 ( 12 )   2018.12

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    DOI: 10.1088/1361-6641/aaebbc

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  18. Activation mechanism of TiOx passivating layer on crystalline Si

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 10 )   2018.10

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    DOI: 10.7567/APEX.11.102301

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  19. A Planetary Microlensing Event with an Unusually Red Source Star: MOA-2011-BLG-291

    Bennett David P., Udalski Andrzej, Bond Ian A., Suzuki Daisuke, Ryu Yoon-Hyun, Abe Fumio, Barry Richard K., Bhattacharya Aparna, Donachie Martin, Fukui Akihiko, Hirao Yuki, Kawasaki Kohei, Kondo Iona, Koshimoto Naoki, Li Man Cheung Alex, Matsubara Yutaka, Miyazaki Shota, Muraki Yasushi, Nagakane Masayuki, Ohnishi Koji, Ranc Clement, Rattenbury Nicholas J., Suematsu Haruno, Sumi Takahiro, Tristram Paul J., Yonehara Atsunori, Szymanski Michal K., Soszynski Igor, Wyrzykowski Lukasz, Ulaczyk Krzysztof, Poleski Radek, Kozlowski Szymon, Pietrukowicz Pawel, Skowron Jan, Shvartzvald Yossi, Maoz Dan, Kaspi Shai, Friedmann Matan, Batista Virginie, DePoy Darren, Dong Subo, Gaudi B. Scott, Gould Andrew, Han Cheongho, Pogge Richard W., Tan Thiam-Guan, Yee Jennifer C.

    ASTRONOMICAL JOURNAL   Vol. 156 ( 3 )   2018.9

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    DOI: 10.3847/1538-3881/aad59c

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  20. Airway foreign body manifested as a coin lesion

    Nishinaga Yuko, Miyazaki Shinichi, Yamashita Ryo, Ikeda Takuya

    CLINICAL CASE REPORTS   Vol. 6 ( 9 ) page: 1913-1914   2018.9

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    DOI: 10.1002/ccr3.1754

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  21. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06KA05

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  22. Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

    Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JE01

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  23. Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06KA01

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  24. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N-2 ambient

    Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06HD08

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  25. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

    Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06HD05

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  26. Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface Reviewed

    Ohta Akio, Nguyen Xuan Truyen, Fujimura Nobuyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06KA08

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  27. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FB07

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  28. High thermal stability of abrupt SiO2/GaN interface with low interface state density

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FG11

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  29. Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si plus Ge) compositions Reviewed

    Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FJ05

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  30. A 16 deg(2) survey of emission-line galaxies at z < 1.5 in HSC-SSP Public Data Release 1

    Hayashi Masao, Tanaka Masayuki, Shimakawa Rhythm, Furusawa Hisanori, Momose Rieko, Koyama Yusei, Silverman John D., Kodama Tadayuki, Komiyama Yutaka, Leauthaud Alexie, Lin Yen-Ting, Miyazaki Satoshi, Nagao Tohru, Nishizawa Atsushi J., Ouchi Masami, Shibuya Takatoshi, Tadaki Ken-ichi, Yabe Kiyoto

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx088

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  31. Hyper Suprime-Cam: System design and verification of image quality

    Miyazaki Satoshi, Komiyama Yutaka, Kawanomoto Satoshi, Doi Yoshiyuki, Furusawa Hisanori, Hamana Takashi, Hayashi Yusuke, Ikeda Hiroyuki, Kamata Yukiko, Karoji Hiroshi, Koike Michitaro, Kurakami Tomio, Miyama Shoken, Morokuma Tomoki, Nakata Fumiaki, Namikawa Kazuhito, Nakaya Hidehiko, Nariai Kyoji, Obuchi Yoshiyuki, Oishi Yukie, Okada Norio, Okura Yuki, Tait Philip, Takata Tadafumi, Tanaka Yoko, Tanaka Masayuki, Terai Tsuyoshi, Tomono Daigo, Uraguchi Fumihiro, Usuda Tomonori, Utsumi Yousuke, Yamada Yoshihiko, Yamanoi Hitomi, Aihara Hiroaki, Fujimori Hiroki, Mineo Sogo, Miyatake Hironao, Oguri Masamune, Uchida Tomohisa, Tanaka Manobu M., Yasuda Naoki, Takada Masahiro, Murayama Hitoshi, Nishizawa Atsushi J., Sugiyama Naoshi, Chiba Masashi, Futamase Toshifumi, Wang Shiang-Yu, Chen Hsin-Yo, Ho Paul T. P., Liaw Eric J. Y., Chiu Chi-Fang, Ho Cheng-Lin, Lai Tsang-Chih, Lee Yao-Cheng, Jeng Dun-Zen, Iwamura Satoru, Armstrong Robert, Bickerton Steve, Bosch James, Gunn James E., Lupton Robert H., Loomis Craig, Price Paul, Smith Steward, Strauss Michael A., Turner Edwin L., Suzuki Hisanori, Miyazaki Yasuhito, Muramatsu Masaharu, Yamamoto Koei, Endo Makoto, Ezaki Yutaka, Ito Noboru, Kawaguchi Noboru, Sofuku Satoshi, Taniike Tomoaki, Akutsu Kotaro, Dojo Naoto, Kasumi Kazuyuki, Matsuda Toru, Imoto Kohei, Miwa Yoshinori, Suzuki Masayuki, Takeshi Kunio, Yokota Hideo

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx063

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  32. GOLDRUSH. II. Clustering of galaxies at z similar to 4-6 revealed with the half-million dropouts over the 100 deg(2) area corresponding to 1 Gpc(3)

    Harikane Yuichi, Ouchi Masami, Ono Yoshiaki, Saito Shun, Behroozi Peter, More Surhud, Shimasaku Kazuhiro, Toshikawa Jun, Lin Yen-Ting, Akiyama Masayuki, Coupon Jean, Komiyama Yutaka, Konno Akira, Lin Sheng-Chieh, Miyazaki Satoshi, Nishizawa Atsushi J., Shibuya Takatoshi, Silverman John

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx097

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  33. Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma

    Wen Yinghui, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    DOI: 10.7567/JJAP.57.01AF05

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  34. First results on the cluster galaxy population from the Subaru Hyper Suprime-Cam survey. II. Faint end color-magnitude diagrams and radial profiles of red and blue galaxies at 0.1 < z < 1.1

    Nishizawa Atsushi J., Oguri Masamune, Oogi Taira, More Surhud, Nishimichi Takahiro, Nagashima Masahiro, Lin Yen-Ting, Mandelbaum Rachel, Takada Masahiro, Bahcall Neta, Coupon Jean, Huang Song, Jian Hung-Yu, Komiyama Yutaka, Leauthaud Alexie, Lin Lihwai, Miyatake Hironao, Miyazaki Satoshi, Tanaka Masayuki

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx106

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  35. First data release of the Hyper Suprime-Cam Subaru Strategic Program

    Aihara Hiroaki, Armstrong Robert, Bickerton Steven, Bosch James, Coupon Jean, Furusawa Hisanori, Hayashi Yusuke, Ikeda Hiroyuki, Kamata Yukiko, Karoji Hiroshi, Kawanomoto Satoshi, Koike Michitaro, Komiyama Yutaka, Lang Dustin, Lupton Robert H., Mineo Sogo, Miyatake Hironao, Miyazaki Satoshi, Morokuma Tomoki, Obuchi Yoshiyuki, Oishi Yukie, Okura Yuki, Price Paul A., Takata Tadafumi, Tanaka Manobu M., Tanaka Masayuki, Tanaka Yoko, Uchida Tomohisa, Uraguchi Fumihiro, Utsumi Yousuke, Wang Shiang-Yu, Yamada Yoshihiko, Yamanoi Hitomi, Yasuda Naoki, Arimoto Nobuo, Chiba Masashi, Finet Francois, Fujimori Hiroki, Fujimoto Seiji, Furusawa Junko, Goto Tomotsugu, Goulding Andy, Gunn James E., Harikane Yuichi, Hattori Takashi, Hayashi Masao, Helminiak Krzysztof G., Higuchi Ryo, Hikage Chiaki, Ho Paul T. P., Hsieh Bau-Ching, Huang Kuiyun, Huang Song, Imanishi Masatoshi, Iwata Ikuru, Jaelani Anton T., Jian Hung-Yu, Kashikawa Nobunari, Katayama Nobuhiko, Kojima Takashi, Konno Akira, Koshida Shintaro, Kusakabe Haruka, Leauthaud Alexie, Lee Chien-Hsiu, Lin Lihwai, Lin Yen-Ting, Mandelbaum Rachel, Matsuoka Yoshiki, Medezinski Elinor, Miyama Shoken, Momose Rieko, More Anupreeta, More Surhud, Mukae Shiro, Murata Ryoma, Murayama Hitoshi, Nagao Tohru, Nakata Fumiaki, Niida Mana, Niikura Hiroko, Nishizawa Atsushi J., Oguri Masamune, Okabe Nobuhiro, Ono Yoshiaki, Onodera Masato, Onoue Masafusa, Ouchi Masami, Pyo Tae-Soo, Shibuya Takatoshi, Shimasaku Kazuhiro, Simet Melanie, Speagle Joshua, Spergel David N., Strauss Michael A., Sugahara Yuma, Sugiyama Naoshi, Suto Yasushi, Suzuki Nao, Tait Philip J., Takada Masahiro, Terai Tsuyoshi, Toba Yoshiki, Turner Edwin L., Uchiyama Hisakazu, Umetsu Keiichi, Urata Yuji, Usuda Tomonori, Yeh Sherry, Yuma Suraphong

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx081

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  36. Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

    Makihara Katsunori, Ikeda Mitsuhisa, Fujimura Nobuyuki, Yamada Kentaro, Ohta Akio, Miyazaki Seiichi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 1 )   2018.1

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    DOI: 10.7567/APEX.11.011305

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  37. Clustering of quasars in a wide luminosity range at redshift 4 with Subaru Hyper Suprime-Cam Wide-field imaging

    He Wanqiu, Akiyama Masayuki, Bosch James, Enoki Motohiro, Harikane Yuichi, Ikeda Hiroyuki, Kashikawa Nobunari, Kawaguchi Toshihiro, Komiyama Yutaka, Lee Chien-Hsiu, Matsuoka Yoshiki, Miyazaki Satoshi, Nagao Tohru, Nagashima Masahiro, Niida Mana, Nishizawa Atsushi J., Oguri Masamune, Onoue Masafusa, Oogi Taira, Ouchi Masami, Schulze Andreas, Shirasaki Yuji, Silverman John D., Tanaka Manobu M., Tanaka Masayuki, Toba Yoshiki, Uchiyama Hisakazu, Yamashita Takuji

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx129

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  38. Clustering of galaxies around AGNs in the HSC Wide survey

    Shirasaki Yuji, Akiyama Masayuki, Nagao Tohru, Toba Yoshiki, He Wanqiu, Ohishi Masatoshi, Mizumoto Yoshihiko, Miyazaki Satoshi, Nishizawa Atsushi J., Usuda Tomonori

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx099

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  39. Characterization of remote O-2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

    Nguyen Xuan Truyen, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    DOI: 10.7567/JJAP.57.01AD02

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  40. An optically-selected cluster catalog at redshift 0.1 < z < 1.1 from the Hyper Suprime-Cam Subaru Strategic Program S16A data

    Oguri Masamune, Lin Yen-Ting, Lin Sheng-Chieh, Nishizawa Atsushi J., More Anupreeta, More Surhud, Hsieh Bau-Ching, Medezinski Elinor, Miyatake Hironao, Jian Hung-Yu, Lin Lihwai, Takada Masahiro, Okabe Nobuhiro, Speagle Joshua S., Coupon Jean, Leauthaud Alexie, Lupton Robert H., Miyazaki Satoshi, Price Paul A., Tanaka Masayuki, Chiu I-Non, Komiyama Yutaka, Okura Yuki, Tanaka Manobu M., Usuda Tomonori

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx042

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  41. Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials FOREWORD

    Naritsuka Shigeya, Miyazaki Seiichi, Fujiwara Yasufumi, Hiramatsu Mineo, Inoue Yasushi, Ishikawa Kenji, Ito Masafumi, Itoh Takashi, Kasu Makoto, Miyake Hideto, Sasaki Minoru, Shirafuji Tatsuru, Suda Yoshiyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    DOI: 10.7567/JJAP.57.01A001

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  42. A large sample of shear-selected clusters from the Hyper Suprime-Cam Subaru Strategic Program S16A Wide field mass maps

    Miyazaki Satoshi, Oguri Masamune, Hamana Takashi, Shirasaki Masato, Koike Michitaro, Komiyama Yutaka, Umetsu Keiichi, Utsumi Yousuke, Okabe Nobuhiro, More Surhud, Medezinski Elinor, Lin Yen-Ting, Miyatake Hironao, Murayama Hitoshi, Ota Naomi, Mitsuishi Ikuyuki

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 70   2018.1

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    DOI: 10.1093/pasj/psx120

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  43. Carrier Conduction in SiO2/GaN Structure with Abrupt Interface

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)     page: .   2018

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  44. High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots Reviewed

    Zhang Hai, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8   Vol. 86 ( 7 ) page: 131-138   2018

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    DOI: 10.1149/08607.0131ecst

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  45. First Results on the Cluster Galaxy Population from the Subaru Hyper Suprime-Cam Survey. III. Brightest Cluster Galaxies, Stellar Mass Distribution, and Active Galaxies

    Lin Yen-Ting, Hsieh Bau-Ching, Lin Sheng-Chieh, Oguri Masamune, Chen Kai-Feng, Tanaka Masayuki, Chiu I-Non, Huang Song, Kodama Tadayuki, Leauthaud Alexie, More Surhud, Nishizawa Atsushi J., Bundy Kevin, Lin Lihwai, Miyazaki Satoshi

    ASTROPHYSICAL JOURNAL   Vol. 851 ( 2 )   2017.12

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    DOI: 10.3847/1538-4357/aa9bf5

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  46. J-GEM observations of an electromagnetic counterpart to the neutron star merger GW170817

    Utsumi Yousuke, Tanaka Masaomi, Tominaga Nozomu, Yoshida Michitoshi, Barway Sudhanshu, Nagayama Takahiro, Zenko Tetsuya, Aoki Kentaro, Fujiyoshi Takuya, Furusawa Hisanori, Kawabata Koji S., Koshida Shintaro, Lee Chien-Hsiu, Morokuma Tomoki, Motohara Kentaro, Nakata Fumiaki, Ohsawa Ryou, Ohta Kouji, Okita Hirofumi, Tajitsu Akito, Tanaka Ichi, Terai Tsuyoshi, Yasuda Naoki, Abe Fumio, Asakura Yuichiro, Bond Ian A., Miyazaki Shota, Sumi Takahiro, Tristram Paul J., Honda Satoshi, Itoh Ryosuke, Itoh Yoichi, Kawabata Miho, Morihana Kumiko, Nagashima Hiroki, Nakaoka Tatsuya, Ohshima Tomohito, Takahashi Jun, Takayama Masaki, Aoki Wako, Baar Stefan, Doi Mamoru, Finet Francois, Kanda Nobuyuki, Kawai Nobuyuki, Kim Ji Hoon, Kuroda Daisuke, Liu Wei, Matsubayashi Kazuya, Murata Katsuhiro L., Nagai Hiroshi, Saito Tomoki, Saito Yoshihiko, Sako Shigeyuki, Sekiguchi Yuichiro, Tamura Yoichi, Tanaka Masayuki, Uemura Makoto, Yamaguchi Masaki S.

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 69 ( 6 )   2017.12

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    DOI: 10.1093/pasj/psx118

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  47. Kilonova from post-merger ejecta as an optical and near-Infrared counterpart of GW170817

    Tanaka Masaomi, Utsumi Yousuke, Mazzali Paolo A., Tominaga Nozomu, Yoshida Michitoshi, Sekiguchi Yuichiro, Morokuma Tomoki, Motohara Kentaro, Ohta Kouji, Kawabata Koji S., Abe Fumio, Aoki Kentaro, Asakura Yuichiro, Baar Stefan, Barway Sudhanshu, Bond Ian A., Doi Mamoru, Fujiyoshi Takuya, Furusawa Hisanori, Honda Satoshi, Itoh Yoichi, Kawabata Miho, Kawai Nobuyuki, Kim Ji Hoon, Lee Chien-Hsiu, Miyazaki Shota, Morihana Kumiko, Nagashima Hiroki, Nagayama Takahiro, Nakaoka Tatsuya, Nakata Fumiaki, Ohsawa Ryou, Ohshima Tomohito, Okita Hirofumi, Saito Tomoki, Sumi Takahiro, Tajitsu Akito, Takahashi Jun, Takayama Masaki, Tamura Yoichi, Tanaka Ichi, Terai Tsuyoshi, Tristram Paul J., Yasuda Naoki, Zenko Tetsuya

    PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF JAPAN   Vol. 69 ( 6 )   2017.12

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    DOI: 10.1093/pasj/psx121

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  48. Oxidation of GaN surface by remote oxygen plasma

    T. Yamamoto, N.Taoka, A.Ohta, N.X.Truyen, H.Yamada, T.Takahashi, M.Ikeda, K.Makihara, M.Shimizu, S.Miyazaki

    Proceedings of International Symposium on Dry Process     page: 73-74   2017.11

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  49. An Isolated Microlens Observed from K2, Spitzer, and Earth

    Zhu Wei, Udalski A., Huang C. X., Novati S. Calchi, Sumi T., Poleski R., Skowron J., Mroz P., Szymanski M. K., Soszynski I., Pietrukowicz P., Kozlowski S., Ulaczyk K., Pawlak M., Beichman C., Bryden G., Carey S., Gaudi B. S., Gould A., Henderson C. B., Shvartzvald Y., Yee J. C., Bond I. A., Bennett D. P., Suzuki D., Rattenbury N. J., Koshimoto N., Abe F., Asakura Y., Barry R. K., Bhattacharya A., Donachie M., Evans P., Fukui A., Hirao Y., Itow Y., Kawasaki K., Li M. C. A., Ling C. H., Masuda K., Matsubara Y., Miyazaki S., Munakata H., Muraki Y., Nagakane M., Ohnishi K., Ranc C., Saito To., Sharan A., Sullivan D. J., Tristram P. J., Yamada T., Yonehara A.

    ASTROPHYSICAL JOURNAL LETTERS   Vol. 849 ( 2 )   2017.11

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    DOI: 10.3847/2041-8213/aa93fa

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  50. Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, S. Miyazaki

    Abstracts of MNC2017     page: 8B-6-3   2017.11

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  51. Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Nanodots by Applying Constant Voltage and Constant Current

    A. Ohta, Y. Kato, M. Ikeda, K. Makihara, S. Miyazaki

    Abstracts of MNC2017     page: 8B-8-6   2017.11

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  52. Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties

    Takeuchi Daichi, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 183-187   2017.11

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    DOI: 10.1016/j.mssp.2016.12.015

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  53. Challenges in Si-Based Nanotechnology:Fabrication and Characterization of Multistack Si/Ge Quantum Dots for Novel Functional Devices

    S.Miyazaki

    Book of Abstracts of ICAMST2017     page: 2   2017.9

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  54. Ground-based Parallax Confirmed by Spitzer: Binary Microlensing Event MOA-2015-BLG-020

    Wang Tianshu, Zhu Wei, Mao Shude, Bond I. A., Gould A., Udalski A., Sumi T., Bozza V., Ranc C., Cassan A., Yee J. C., Han C., Abe F., Asakura Y., Barry R., Bennett D. P., Bhattacharya A., Donachie M., Evans P., Fukui A., Hirao Y., Itow Y., Kawasaki K., Koshimoto N., Li M. C. A., Ling C. H., Masuda K., Matsubara Y., Miyazaki S., Muraki Y., Nagakane M., Ohnishi K., Rattenbury N., Saito To., Sharan A., Shibai H., Sullivan D. J., Suzuki D., Tristram P. J., Yamada T., Yonehara A., Kozlowski S., Mroz P., Pawlak M., Pietrukowicz P., Poleski R., Skowron J., Soszynski I., Szymanski M. K., Ulaczyk K., Beichman C., Bryden G., Novati S. Calchi, Carey S., Fausnaugh M., Gaudi B. S., Henderson C. B., Shvartzvald Y., Wibking B., Albrow M. D., Chung S. -J., Hwang K. -H., Jung Y. K., Ryu Y. -H., Shin I. -G., Cha S. -M., Kim D. -J., Kim H. -W., Kim S. -L., Lee C. -U., Lee Y., Park B. -G., Pogge R. W., Street R. A., Tsapras Y., Hundertmark M., Bachelet E., Dominik M., Horne K., Jaimes R. Figuera, Wambsganss J., Bramich D. M., Schmidt R., Snodgrass C., Steele I. A., Menzies J.

    ASTROPHYSICAL JOURNAL   Vol. 845 ( 2 )   2017.8

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    DOI: 10.3847/1538-4357/aa813b

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  55. 高誘電率絶縁膜の電子親和力の決定および SiO2 との界面で生じる電位変化の定量

    藤村信幸, 大田晃生, 池田弥央, 牧原克典, 宮崎誠一

    第37回表面科学学術講演会要旨集 第58回真空に関する連合講演会予稿集     page: 28   2017.8

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  56. リモート酸素プラズマ支援 CVD による急峻 SiO2/GaN 界面の形成とその電気的特性

    NguyenXuanTruyen, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田 弥央, 牧原克典, 清水三聡, 宮崎誠一

    第37回表面科学学術講演会要旨集 第58回真空に関する連合講演会予稿集     page: 28   2017.8

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  57. Magnetoelectronic transport of double stack FePt nanodots Reviewed

    Makihara Katsunori, Kawase Taiga, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 5 )   2017.7

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    DOI: 10.1063/1.4985603

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  58. Fabrication of Multistack Si/Ge Quantum Dots for Light/Electron Emission Devices

    S.Miyazaki, Y.Yamada, Y.Nakashima, K.Makihara, A.Ohta, M.Ikeda

    Conference Guide of ISCGC2017     page: 32   2017.7

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  59. Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD

    N.X.Truyen, A.Ohta, K.Makihara, M.Ikeda, S.Miyazaki, (AIST:N.Taoka, H. Yamada, T.Takahashi, M.Shimizu)

    Abstract of AWAD2017     page: 77-80   2017.7

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  60. Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy

    A.Ohta, M.Ikeda, K.Makihara, S.Miyazaki

    Abstruct of INFOS2017     page: 0-0   2017.6

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  61. Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis

    A.Ohta, H.Murakami, M.Ikeda, K.Makihara, E.Ikenaga, S.Miyazaki

    Abstruct of INFOS2017     page: 0-0   2017.6

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  62. Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

    Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    MICROELECTRONIC ENGINEERING   Vol. 178   page: 85-88   2017.6

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    DOI: 10.1016/j.mee.2017.05.001

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  63. Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis Reviewed

    Ohta Akio, Murakami Hideki, Ikeda Mitsuhisa, Makihara Katsunori, Ikenaga Eiji, Miyazaki Seiichi

    MICROELECTRONIC ENGINEERING   Vol. 178   page: 80-84   2017.6

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    DOI: 10.1016/j.mee.2017.05.002

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  64. 定電圧および定電流印加によるSi酸化薄膜の電気抵抗変化特性評価

    大田晃生, 加藤祐介, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 25-29   2017.6

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  65. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 43-48   2017.6

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  66. XPSによるHigh-k/SiO2界面の化学構造およびダイポールの評価

    藤村信幸, 大田晃生, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 19-23   2017.6

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  67. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 43-48   2017.6

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  68. XPSによるHigh-k/SiO2界面の化学構造およびダイポールの評価

    藤村信幸, 大田晃生, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 19-23   2017.6

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  69. 定電圧および定電流印加によるSi酸化薄膜の電気抵抗変化特性評価

    大田晃生, 加藤祐介, 池田弥央, 牧原克典, 宮崎誠一

    信学技報   Vol. 117 ( 101 ) page: 25-29   2017.6

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  70. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06GG07

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  71. Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors

    Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E100C ( 5 ) page: 468-474   2017.5

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    DOI: 10.1587/transele.E100.C.468

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  72. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces Reviewed

    Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CB04

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  73. Evaluation of Inner Potential Change and Electrical Dipole in Ultrathin Oxide Stacked Structure Using XPS Measurements

        page: 187 - 190   2017.1

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  74. Photoemission Study of Chemical Bonding Features and Electronic Defect States of Remote Plasma CVD SiO2/GaN Structure

        page: 207 - 210   2017.1

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  75. Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface

    Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AF01

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  76. High-density formation of Ta nanodot induced by remote hydrogen plasma

    Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AE01

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  77. Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis

    Miyazaki S., Ohta A., Fujimura N.

    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR   Vol. 80 ( 1 ) page: 229-235   2017

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    DOI: 10.1149/08001.0229ecst

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  78. Impact Of Mild To Moderate COPD On Prognosis And Feasibility For Chemotherapy In Patients With Lung Cancer

    Omote N., Hashimoto N., Morise M., Miyazaki S., Ando A., Hasegawa Y.

    AMERICAN JOURNAL OF RESPIRATORY AND CRITICAL CARE MEDICINE   Vol. 195   page: .   2017

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  79. Impact of mild to moderate COPD on feasibility and prognosis in non-small cell lung cancer patients who received chemotherapy

    Omote Norihito, Hashimoto Naozumi, Morise Masahiro, Sakamoto Koji, Miyazaki Shinichi, Ando Akira, Nakahara Yoshio, Hasegawa Yoshinori

    INTERNATIONAL JOURNAL OF CHRONIC OBSTRUCTIVE PULMONARY DISEASE   Vol. 12   page: 3541-3547   2017

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    DOI: 10.2147/COPD.S149456

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  80. Exogenous Induction Of Unphosphorylated Tumor Suppressor Phosphatase And Tensin Homolog Deleted On Chromosome 10 Modulates Transforming Growth Factor beta-Induced Extracellular Matrix Expression In Lung Fibroblasts

    Omote N., Hashimoto N., Kimura M., Miyazaki S., Ando A., Sakamoto K., Hasegawa Y.

    AMERICAN JOURNAL OF RESPIRATORY AND CRITICAL CARE MEDICINE   Vol. 195   page: .   2017

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  81. Exogenous induction of unphosphorylated PTEN reduces TGF beta-induced extracellular matrix expressions in lung fibroblasts

    Kimura Motohiro, Hashimoto Naozumi, Kusunose Masaaki, Aoyama Daisuke, Sakamoto Koji, Miyazaki Shinichi, Ando Akira, Omote Norihiro, Imaizumi Kazuyoshi, Kawabe Tsutomu, Hasegawa Yoshinori

    WOUND REPAIR AND REGENERATION   Vol. 25 ( 1 ) page: 86-97   2017

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    DOI: 10.1111/wrr.12506

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  82. Photoemission Study of Gate Dielectrics on Gallium Nitride Reviewed

    Miyazaki Seiichi, Nguyen Xuan Truyen, Ohta Akio, Yamamoto Taishi

    2017 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 6)   Vol. 79 ( 1 ) page: 119-127   2017

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    DOI: 10.1149/07901.0119ecst

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  83. Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices Reviewed

    Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa

    SEMICONDUCTOR PROCESS INTEGRATION 10   Vol. 80 ( 4 ) page: 167-172   2017

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    DOI: 10.1149/08004.0167ecst

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  84. リモート酸素プラズマ支援CVDによる低温SiO2薄膜形成

    「グェンスァン チュン」「藤村信幸」「竹内大智」「大田晃生」「牧原克典」「池田弥央」「宮崎誠一」

    信学技報   Vol. 116 ( 118 ) page: 49-52   2016.6

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  85. XPSによるSiO2/半導体界面の電位変化およびダイポールの定量

    「藤村信幸」「大田晃生」「渡辺浩成」「牧原克典」「宮崎誠一」

    信学技報   Vol. 116 ( 118 ) page: 43-47   2016.6

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  86. High Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core

    Seiichi Miyazaki

    Abstract of 11th Workshop on Si-based Optoelectronic Materials and Devices     page: 1   2016.6

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  87. Characterization of light emission from Si quantum dots with Ge core

    Seiichi Miyazaki

    ABSTRACTS OF THERMEC'2016 - International Conference on Processing & Manufacturing of advanced Materials     page: 390   2016.5

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  88. High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core

    S.Miyazaki

    Abstract of BIT's 2nd Annual World Congress of Smart Materials-2016     page: 76   2016.3

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  89. Evaluation of Energy Band Diagram and Depth Profile of Electronic Defect State Density for SiO2/4H-SiC Structures

        page: 185 - 188   2016.1

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  90. 4H-SiC(0001) Surface Modification by Remote Hydrogen Plasma Exposure

        page: 217 - 220   2016.1

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  91. Evaluation of Valence Band Top and Electron Affinity of Si, 4H-SiC, and SiO2 Using X-ray Photoelectron Spectroscopy

        page: 209 - 212   2016.1

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  92. Effect of Embedding Ti Nanodots into SiOx Film on Its Resistive Switching Properties

        page: 205 - 208   2016.1

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  93. Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS

    Extended Abstracts of 2015 IWDTF     page: 85 - 86   2015.11

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  94. Photoemission Study of Thermally-Grown SiO2/4H-SiC Structure.

    Extended Abstracts of 2015 IWDTF     page: 45 - 46   2015.11

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  95. Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots

    Extended Abstracts of 2015 IWDTF     page: 35 - 36   2015.11

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  96. Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core

    K.Kondo, K.Makihara, A.Oota, S.Miyazaki

    Abstract of AWAD2015     page: 389-392   2015.6

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  97. Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy

    A.Ohta, K.Makihara, S.Miyazaki

    Abstract of infos2015     page: 87-88   2015.6

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  98. Electron Transport Properties of High Densuty FePt-NDs Stacked Structures

    Y.Mitsuyuki, K.Makihara, A.Oota, S.Miyazaki

    Abstract of AWAD2015     page: 76-79   2015.6

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  99. Study on Light Emission from Si Quantum Dots with Ge Core

    S.Miyazaki, K.Kondo, K.Makihara

    Abstract of ICSI-9     page: 45-46   2015.5

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  100. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)

    H.Murakami, S.Hamada, T.Ono, K.Hashimoto, A.Ohta, H.Hanafusa, S.Higashi, S.Miyazaki

    ECS Transactions   Vol. 64 ( 6 ) page: 423-429   2014.10

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  101. Photoluminescence Study of Si Quantum Dots with Ge Core

    K.Makihara, K.Kondo, M.Ikeda, A.Ohta, S.Miyazaki

    ECS Transactions   Vol. 64 ( 6 ) page: 365-370   2014.10

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  102. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack

    A.Ohta, H.Murakami, K.Hashimoto, K.Makihara, S.Miyazaki

    ECS Transactions   Vol. 64 ( 6 ) page: 241-248   2014.10

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  103. Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy

    D.Takeuchi, K.Makihara, A.Ohta, M.Ikeda,S.Miyazaki

    ECS Transactions   Vol. 64 ( 6 ) page: 923-928   2014.10

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  104. Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements

    A.Ohta, C.Liu, T.Arai, D.Takeuchi, H.Zhang, K. Makihara, S.Miyazaki

    AWAD2014 Workshop Digest     page: 217-221   2014.7

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  105. Progress in Determination Method of Ultrathin Oxide Bandgaps from Analysis of Energy Loss Signals for Photoelectrons

        page: 179-182   2014.1

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  106. Impact of Post-Metallization Annealing on Chemical Structures in Ge-MIS Capacitors with HfO2/TaGexOy Dielectrics

        page: 139-142   2014.1

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  107. Fabrication of Low-Resistance Shallow Juntion by Low Temperature As+-Ion Implantation to Ge(100)

        page: 183-186   2014.1

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  108. Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory

    S.Otsuka, T.Shimizu, S.Shingubara, K.Makihara, S.Miyazaki, A.Yamasaki, Y.Tanimoto, K.Takase

    AIP Advances   Vol. 4 ( 8 )   2014

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    DOI: 10.1063/1.4892823

  109. Optoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gate

    S.Miyazaki

    Program&Abstracts of 2013 EMN Fall Meeting     page: 202-203   2013.12

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  110. Impact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO2/TaGexOy Stack

    K. Hashimoto, T. Ono, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

    Extended Abstracts of 2013 IWDTF     page: 49 - 50   2013.11

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  111. Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation

    Y. Lu, K. Makihara, D.Takeuchi, K. Sakaike, M. Akazawa, M. Ikeda, S. Higashi, S. Miyazaki

    Abstracts of ICANS25     page: 141-143   2013.8

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  112. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

    D.Takeuchi, K.Makihara, M.Ikeda, S.Miyazaki, H.Kaki, T.Hayashi

    proceedings of 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices     page: 275-278   2013.6

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  113. Selective Growth of Self-Assembling Si and SiGe Quantum Dots

    K.Makihara, M.Ikeda, S.Miyazaki

    proceedings of 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices     page: 333-336   2013.6

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  114. High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics

      Vol. 113 ( 87 ) page: 47-50   2013.6

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  115. Photoemission Study of Rt/SiOx/Pt Structures

    A.Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

        page: 229 - 232   2013.1

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  116. Characterization of Resistive Switching of Ultrathin Si-rich Oxide Contacted with TiN Electrodes

    M.Fukushima, A.Ohta, K. Makihara, S. Miyazaki

        page: 233-236   2013.1

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  117. Characterization of Chemical Bonding Features of As+ -Implanted Ge by X-ray Photoemission Spectroscopy

        page: 171-174   2013.1

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  118. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

    A Ohta, H Murakami, S Higashi, S Miyazaki

    Journal of Physics: Conference Series   Vol. 417   page: 012012(1-6)   2013

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    DOI: 10.1088/1742-6596/417/1/012012

  119. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

    K Mishima, H Murakami, A Ohta, S K Sahari, T Fujioka, S Higashi, S Miyazaki

    Journal ofPhysics:ConferenceSeries   Vol. 417   page: 012013(1-6)   2013

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    DOI: 10.1088/1742-6596/417/1/012013

  120. Kinetics of thermally oxidation of Ge(100) surface

    S K Sahari, A Ohta, M Matsui, K Mishima, H Murakami, S Higashi, S Miyazaki

    Journal of Physics: Conference Series   Vol. 417   page: 012014(1-6)   2013

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    DOI: 10.1088/1742-6596/417/1/012014

  121. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

    S. Miyazaki

    MRS Proceedings   Vol. 1510   2013

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    DOI: 10.1557/opl.2013.272

  122. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

    K. Hashimoto, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 674-679   2013

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  123. X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

    A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba, J. Murota

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 680-685   2013

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  124. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

    A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 702-707   2013

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  125. Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System

    M. Fukushima, A. Ohta, K. Makihara, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 708-713   2013

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  126. Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, T. Hayashi

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 718-721   2013

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  127. Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures

    M. Ikeda, K. Makihara, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E96-C ( 5 ) page: 694-698   2013

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  128. Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots

    H. Takami, K. Makihara, M. Ikeda, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 52 ( 4 ) page: 04CG08 (4 pages)   2013

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  129. High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, S. Miyazaki

    Advanced Materials Research Vols 750-752     page: 1011-1015   2013

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  130. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

    S. Miyazaki

    MRS Proceedings   Vol. 1510   2013

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    DOI: http://dx.doi.org/10.1557/opl.2013.272

  131. XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)

    A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

    Trans. of MRS-J   Vol. 38 ( 3 ) page: 353-357   2013

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  132. Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM

    N. Tsunekawa K. Makihara, M. Ikeda, S. Miyazaki

    Trans. of MRS-J   Vol. 38 ( 3 ) page: 393-396   2013

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  133. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes

    A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, S. Miyazaki

    ECS Trans   Vol. 58 ( 9 ) page: 293-300   2013

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  134. Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

    S. Miyazaki, M. Ikeda, K. Makihara

    ECS Trans   Vol. 58 ( 9 ) page: 231-237   2013

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  135. Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-

    K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 52   page: 11NA04 (3 pages)   2013

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  136. Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes

    A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 52   page: 11NJ06 (5 pages)   2013

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  137. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

    Seiichi Miyazaki

    2012 MRS Fall Meeting Abstracts     page: DD6.01   2012.11

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  138. ナノ構造制御で展開する電子デバイス開発(チュートリアル)

    宮崎誠一

    薄膜材料デバイス研究会 第9回研究集会「薄膜デバイスの未来」     page: 1-26   2012.11

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  139. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

    A.Ohta, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki

    AWAD2012 Workshop Digest     page: 186-191   2012.6

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  140. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

    K.Hashimoto, A.Ohta, H.Murakami, S.Higashi, S.Miyazaki

    AWAD2012 Workshop Digest     page: 219-224   2012.6

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  141. Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures

    M.Ikeda, K.Makihara, S.Miyazaki

    AWAD2012 Workshop Digest     page: 206-209   2012.6

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  142. Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy

    D.Takeuchi, K.Makihara, M.Ikeda, A.Ohta, K.Makihara, M.Ikeda, S.Miyazaki, H.Kaki, T.Hayashi

    AWAD2012 Workshop Digest     page: 202-205   2012.6

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  143. Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System

    M. Fukusima, A.Ohta, K.Makihara, S.Miyazaki

    AWAD2012 Workshop Digest     page: 192-197   2012.6

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  144. Study of ElectronTransport Characteristics Through Self-Aligned Si-Based Quantum Dots

    K.Makihara, C.Liu, M.Ikeda, S.Miyazaki

    Proceedings of 2012 International Silicon-Germanium Technology and Device Meeting(ISTDM)     page: 182-183   2012.6

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  145. Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP-Crystalline Nucleation Initiated by Ni-nanodots-

    K.Makihara, J.Gao, K.Sakaike, S.Hayashi, H.Deki, M.Ikeda, S.Higashi, S.Miyazaki

    Proceedings of 2012 International Silicon-Germanium Technology and Device Meeting(ISTDM)     page: 138-139   2012.6

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  146. Pt/SiOx/TiNダイオード構造の化学構造分析と電気抵抗スイッチング特性評価

    福嶋太紀、、大田晃生、牧原克典、宮崎誠一

    信学技報   Vol. 112 ( 92 ) page: 1-6   2012.6

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  147. As+イオン注入したゲルマニウム層の化学分析

    小野貴寛、大田晃生、村上秀樹、東 清一郎、宮崎誠一

    信学技報   Vol. 112 ( 92 ) page: 63-67   2012.6

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  148. 極薄層挿入によるAl/Ge接合の伝導特性制御

    大田晃生、松井真史、村上秀樹、東 清一郎、宮崎誠一

    信学技報   Vol. 112 ( 92 ) page: 53-58   2012.6

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  149. TaOx層挿入によるHfO2/Ge界面反応制御

    村上秀樹、三嶋健斗、大田晃生、橋本邦明、東 清一郎、宮崎誠一

    信学技報   Vol. 112 ( 92 ) page: 33-36   2012.6

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  150. Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動

    池田弥央、牧原克典、宮崎誠一

    信学技報   Vol. 112 ( 92 ) page: 13-16   2012.6

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  151. 酸化アルミニウムを用いた抵抗変化メモリのスイッチング電圧のばらつき抑制 1

    大塚慎太郎,古屋沙絵子,清水智弘,新宮原正三,牧原克典,宮崎誠一,渡辺忠孝,高野良紀,高瀬浩一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 15a-GP3-11   2012.3

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  152. 走査プローブ顕微鏡によるカーボンナノウォールの初期成長過程の解明

    近藤博基,安田幸司,牧原克典,宮崎誠一,平松美根男,関根 誠,堀  勝

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16a-A3-11   2012.3

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  153. GeH4 VHF-ICP からの高結晶性Ge:H 薄膜堆積 -Ni ナノドットを用いた結晶核発生制御-

    高  金,牧原克典,酒池耕平,林 将平,出木秀典,池田弥央,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16a-B6-5   2012.3

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  154. Si量子ドット/NiSiナノドットハイブリッドフローティングゲートにおける光励起電子のパルス電圧応答

    池田弥央,牧原克典,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18a-GP6-11   2012.3

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  155. 高濃度As+イオン注入ゲルマニウム層における化学結合状態評価

    小野貴寛,大田晃生,村上秀樹,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18a-A6-9   2012.3

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  156. ゲルマニウムドライ酸化における温度依存性

    大田晃生,Siti Kudnie Sahari,池田弥央,村上秀樹,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16a-A5-4   2012.3

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  157. AFM/KFMによる一次元連結・高密度Si系量子ドットの帯電状態の経時変化計測

    牧原克典,恒川直輝,池田弥央,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18p-A1-8   2012.3

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  158. 一次元縦積み連結Si系量子ドットの室温共鳴トンネル伝導

    牧原克典,池田弥央,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18p-A1-7   2012.3

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  159. 一次元連結Si系量子ドットのEL特性評価

    高見弘貴,牧原克典,出木秀典,池田弥央,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18p-A1-5   2012.3

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  160. 極薄層挿入によるAl/p-Ge接合のショットキー障壁制御

    松井真史,大田晃生,村上秀樹,小野貴寛,橋本邦明,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18p-A1-3   2012.3

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  161. 導電性AFM探針による極薄Au/柱状Siナノ構造の局所電気伝導評価

    竹内大智,牧原克典,池田弥央,宮崎誠一,可貴裕和,林  司

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18a-A1-4   2012.3

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  162. 熱プラズマジェットを用いたミリ秒熱処理によるPtおよびPtシリサイドナノドットの形成とフローティングゲートメモリ応用

    牧原克典,山根雅人,池田弥央,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 18a-B3-1   2012.3

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  163. Ptナノドット電極を用いたSiOx膜の抵抗変化特性評価

    福嶋太紀,大田晃生,牧原克典,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16p-F6-12   2012.3

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  164. Pt/SiOx/TiNダイオード構造の抵抗変化特性評価

    福嶋太紀,大田晃生,牧原克典,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16p-F6-11   2012.3

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  165. Pt/SiOx/Pt構造における抵抗変化特性

    大田晃生,牧原克典,池田弥央,村上秀樹,東清一郎,宮崎誠一

    2012年春季 第59回応用物理学関係連合講演会 講演予稿集     page: 16p-F6-10   2012.3

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  166. Thermal Oxidation of Ge Surface - Impact of Oxidation Temperature on Ge Oxide Structure

        page: 93-96   2012.1

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  167. Control of Interfacial Reaction by TaOx Insertion to HfO2/Ge Interfaces

        page: 121-124   2012.1

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  168. Evaluation of Chemical Structure and Resistance-Switching Properties of RF Sputtered Si-rich Oxide Thin Films

        page: 221-224   2012.1

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  169. XPS Study of Changes in Chemical Structures at Metal/GeO2 Interfaces with Thermal Annealing

        page: 169-172   2012.1

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  170. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density

    K. Makihara, H. Deki, M Ikeda, S, Miyazaki

    Jpn. J. Appl. Phys.   Vol. 51 ( 4 ) page: 04DG08(5 pages)   2012

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  171. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy

    K. Makihara, H. Deki, M Ikeda, S, Miyazaki

    J. Non-Cry. Solids   Vol. 358 ( 17 ) page: 2086-2089   2012

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  172. Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes

    K. Makihara, M. Fukushima, A. Ohta, M. Ikeda, S. Miyazaki

    ECS Trans.   Vol. 50 ( 9 ) page: 459-464   2012

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  173. Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion

    A. Ohta, M. Matsui, H. Murakami, S. Higashi, S. Miyazaki

    ECS Trans.   Vol. 50 ( 9 ) page: 449-457   2012

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  174. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes

    A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 51   page: 06FF02(6 pages)   2012

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  175. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

    A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, S. Miyazaki

    IEICE Trans., on Electronics   Vol. E95-C ( 5 ) page: 879-884   2012

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  176. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density

    K. Makihara, H. Deki, M Ikeda, S, Miyazaki

    Jpn. J. Appl. Phys   Vol. 51 ( 4 ) page: 04DG08 (5 pages)   2012

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  177. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy

    K. Makihara, H. Deki, M Ikeda, S, Miyazaki

    J. Non-Cry. Solids   Vol. 358 ( 17 ) page: 2086-2089   2012

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  178. Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes

    K. Makihara, M. Fukushima, A. Ohta, M. Ikeda, S. Miyazaki

    ECS Trans   Vol. 50 ( 9 ) page: 459-464   2012

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  179. Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion

    A. Ohta, M. Matsui, H. Murakami, S. Higashi, S. Miyazaki

    ECS Trans   Vol. 50 ( 9 ) page: 449-457   2012

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  180. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes

    A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 51   page: 06FF02 (6 pages)   2012

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  181. 超低消費電力化デバイス開発に向けた材料・プロセス研究

    宮崎誠一

    SPring-8コンファレンス2011 講演概要集     page: 53   2011.11

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  182. Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and Its Application to Floating Gate Functional Devices

    S.Miyazaki

    ECS Transaction   Vol. 41 ( 7 ) page: 93-98   2011.10

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  183. Formation of Metal-Semiconductor Hybrid Nanodots and Its Application to Functional Floating Gate

    S.Miyazaki

    Abstract of BIT's 1st Annual World Congress of Nano-S&T 2011     page: 256   2011.10

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  184. XPS Study of Interfacial Reaction between Metal and Ultrathin Ge Oxide

    A.Ohta, T.Fujioka, H.Murakami, S.Higashi, S.Miyazaki

    Japanese Journal of Applied Physics   Vol. 50 ( 10 ) page: 10PE01 (6pages).   2011.10

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  185. Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed Oxide

    A. Ohta, Y. Goto, G. Wei, H. Murakami, S. Higashi, S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 50 ( 10 ) page: 10PH02(6pages)   2011.10

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  186. Characterization of chemical bonding features at metal/GeO2 interfaces by X-ray photoelectron spectroscopy

    M. Matsui, H. Murakami, T. Fujioka, A. Ohta, S. Higashi, S. Miyazaki

    MICROELECTRONIC ENGINEERING   Vol. 88 ( 7 ) page: 1549-1552   2011.7

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  187. Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics

    G. Wei, H. Murakami, T. Fujioka, A. Ohta, Y. Goto, S. Higashi, S. Miyazaki

    MICROELECTRONIC ENGINEERING   Vol. 88 ( 7 ) page: 1152-1154   2011.7

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  188. Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors

    K. Makihara, M. Ikeda, A. Ohta, S. Miyazaki

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices     page: 47-50   2011.6

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    DOI: 47-50

  189. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

    A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, S. Miyazaki

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices     page: 41-46   2011.6

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    DOI: 41-46

  190. Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities

    A. Ohta, D. Kanme, H. Murakami, S. Higashi, S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. E94-C ( 5 ) page: 717-723   2011.5

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  191. Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure

    G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. E94-C ( 5 ) page: 699-704   2011.5

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  192. Study on Native Oxidation of Ge (111) and (100) Surfaces

    S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 50 ( 4 ) page: 04DA12 (4 pages)   2011.4

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  193. Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation

    K. Matsumoto, A. Ohta, S. Miyazaki, S. Higashi

    Japanese Journal of Applied Physics   Vol. 50 ( 4 ) page: 04DA07 (4 pages)   2011.4

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  194. Characterization of Chemical and Electronic States of Ruthenium

        page: 39   2011.1

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  195. X線光電子分光法による金属/GeO₂界面の化学結合状態分析

    松井真史、藤岡知宏、大田晃生、村上秀樹、東清一郎、宮崎誠一

    応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催 特別研究会アブストラクト集     page: 41   2011.1

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  196. Formation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O3

    T.Fujioka, A.Ohta, H.Murakami, S.Higashi, S.Miyazaki

    Extended Abstracts of IWDTF2011     page: 51-52   2011.1

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  197. Characterization of Resistance-Switching of SiOx Dielectrics

    Y.Goto, A.Ohta, H.Murakami, S.Higashi, S.Miyazaki

    Extended Abstracts of IWDTF2011     page: 163-164   2011.1

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  198. Impact of Y2O3 Addition of Chemical Bonding Features and Resistance Switching of TiO2

    A.Ohta, Y.Goto, G.Wei, H.Murakami, S.Higashi, S.Miyazaki

    Extended Abstracts of IWDTF2011     page: 113-114   2011.1

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  199. XPS Study of Interfacial Reaction between Metal and Ge Oxide

    A.Ohta, T.Fujioka, H.Murakami, S.Higashi, S.Miyazaki

    Extended Abstracts of IWDTF2011     page: 25 - 26   2011.1

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  200. Study on Native Oxidation of Ge (111) and (100) Surfaces

    S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 50   page: 04DA12(4 pages)   2011

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  201. High Density Formation of Ge Quantum Dots on SiO2

    K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, S. Miyazaki

    Solid State Electronics   Vol. 60   page: 65-69   2011

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  202. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

    M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki

    IEICE   Vol. 94-C ( 5 ) page: 730-736   2011

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  203. The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure

    G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki

    IEICE   Vol. 94-C ( 5 ) page: 699-704   2011

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  204. Collective Tunneling Model in Charge Trap Type NVM Cell

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh

    Jpn. J. Appl. Phys.   Vol. 50 ( 4 ) page: 04DD04(4 pages)   2011

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  205. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

    N. Morisawa, M. Ikeda, K. Makihara, S. Miyazaki

    Key Engineering Materials   Vol. 470   page: 135-139   2011

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  206. Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory

    K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 8 ) page: 08KE06(4 pages)   2011

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  207. The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics

    A. Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 50   page: 06GG01(5 pages)   2011

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  208. Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

    S. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 50   page: 03CB10(8 pages)   2011

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  209. Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

    S. Higashi, S. Hayashi, Y. Hiroshige, Y. Nishida, H. Murakami, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 50   page: 03CB10 (8 pages)   2011

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  210. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

    N. Morisawa, M. Ikeda, K. Makihara, S. Miyazaki

    Key Engineering Materials   Vol. 470   page: 135-139   2011

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  211. High Density Formation of Ge Quantum Dots on SiO2

    K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, S. Miyazaki

    Solid State Electronics   Vol. 60   page: 65-69   2011

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  212. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

    M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh

    IEICE Trans. on Electronics   Vol. 94-C ( 5 ) page: 730-736   2011

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  213. The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure

    G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. 94-C ( 5 ) page: 699-704   2011

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  214. Collective Tunneling Model in Charge Trap Type NVM Cell

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh

    Jpn. J. Appl. Phys   Vol. 50 ( 4 ) page: 04DD04 (4 pages)   2011

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  215. Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory

    K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 50 ( 8 ) page: 08KE06 (4pages)   2011

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  216. The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics

    A. Ohta, Y. Goto, M. F. Kazalman, G. Wei, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys   Vol. 50 ( 6 ) page: 06GG01 (5 pages)   2011

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  217. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique Reviewed

    S. Higashi, K. Sugakawa, H. Kaku, T. Okada, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   page: 03CA08 (4 pages)   2010.3

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    The electrical characteristics of thin-film transistors (TFTs) fabricated by thermal plasma jet (TPJ)-crystallized microcrystalline Si (&micro;c-Si) films have been investigated. Amorphous Si (a-Si) films were crystallized with the TPJ under the scanning speed (v) of 350 to 550 mm/s, and &micro;c-Si TFTs were successfully fabricated with a 300 °C process. By reducing v, &micro;FE increases from 3.2 to 17.1 cm2 V-1 s-1, and Vth and S decrease from 9.2 to 5.2 V and 1.3 to 0.6 V/decade, respectively. The variations of &micro;FE, Vth, and S were kept within small values of 1.06 (±4.4%), 0.14 (±1.1%), and 0.04 (±4.0%), respectively. The &micro;c-Si is formed with ∼20-nm-sized randomly oriented small grains, and this isotropic nature results in very small variation of TFT performance. With decreasing v, the fraction of nano sized grains and disordered bonds at the grain boundary decreases, which results in improved TFT performance.

  218. Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Reviewed

    Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki

      Vol. 49   page: 014001 (4 pages)   2010.1

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    Quantum mechanical electron tunneling has potential applications in both science and technology, such as flash memories in modern LSI technologies and electron transport chains in biosystems. Although it is known that one-dimensional quantum electron tunneling lacks temperature dependence, the behavior of electron tunneling between different dimensional systems is still an open question. Here, we investigated the electron tunneling between a two-dimensional electron gas (2DEG) and zero-dimensional Si quantum dots and discovered an unexpected temperature dependence: At high temperature, the gate voltage necessary for electron injection from 2DEG to Si quantum dots becomes markedly small. This unusual tunneling behavior was phenomenologically explained by considering the geometrical matching of wave functions between different dimensional systems. We assumed that electron tunneling would occur within a finite experimental measurement time. Then, the observed electron tunneling is explained only by the contributions of wave packets below the quantum dot with a finite lifetime rather than the ordinary thermal excited states of 2DEG.

  219. Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals

    H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi and S. Miyazaki

    ECS Trans.   Vol. 33   2010

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  220. Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application

    S. Miyazaki, K. Makihara, M. Ikeda

    Thin Solid Films   Vol. 518   page: S30-S34   2010

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  221. Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

    J. of Materials Science Forum   Vol. 638-642   page: 1725-1730   2010

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  222. Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

    Physica E   Vol. 42 ( 4 ) page: 918–921   2010

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  223. Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure

    K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    Journal of Optoelectronics and Advanced Materials   Vol. 12 ( 3 ) page: 626-630   2010

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  224. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation

    T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki

    Physica Status Solidi C   Vol. 7 ( 3-4 ) page: 732-734   2010

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  225. Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures

    N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   2010

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  226. Activation of B and As in Ultrashallow Junction DuringMillisecond Annealing Induced by Thermal Plasma Jet Irradiation

    K. Matsumote, S. Higashi, H. Murakami and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   2010

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  227. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots

    K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki

    Trans. of IEICE   Vol. E93-C ( 5 ) page: 569-572   2010

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  228. Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique

    K. Makihara, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49 ( 2 )   2010

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  229. Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

    S. Hayashi, S. Higashi, H. Murakami and S. Miyazaki

    Appl. Phys. Exp.   Vol. 3   2010

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  230. Self-Align Formation of Si Quantum Dots

    K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki

    ECS Trans.   Vol. 33   2010

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  231. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melt

    T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki

    ECS Trans.   Vol. 33   2010

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  232. Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma

    A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   page: 08JA04   2010

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  233. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices

    M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta

    Physica E.   Vol. 42 ( 10 ) page: 2602-2605   2010

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  234. Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon

    H. Itokawa, A. Ohta, M. Ikeda, I. Mizushima, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   2010

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    DOI: 081301

  235. Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon

    H. Itokawa, A. Ohta, M. Ikeda, I. Mizushima, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49   page: 081301 (5 pages)   2010

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  236. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique

    K. Sugakawa, S. Higashi, H. Kaku, T. Okada, S. Miyazaki

    2009 The Sixteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'09)(Nara)   Vol. P-4   page: 117-120   2009.7

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  237. Electrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensor

    H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, Y. Hata, A. Kuroda, S. Higashi, S. Miyazaki

    2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), (Korea)   Vol. 2B-8   2009.6

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  238. Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100)

    A. Ohta, D. Kanme, H. Murakami, S. Higashi, S. Miyazaki

    16th biannual Conference on Insulating Films on Semiconductors 2009 (INFOS2009),(Cambridge, UK)     page: 178   2009.6

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  239. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots

    K. Makihara, M. Ikeda, A. Kawanami,S. Miyazaki

    2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), (Korea)   Vol. 3A-6   2009.6

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  240. Electrical Charging Characteristics of NiSi-Nanodots Floating Gate

    S. Nakanishi, M. Ikeda, K. Shimanoe, K. Makihara, A. Kawanami, N. Morisawa, A. Fujimoto, S. Higashi, S. Miyazaki

    International Meeting for Future of Electron Devices, Kansai, (IMFEDK)(Osaka)   Vol. C-5   page: 62-63   2009.5

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  241. Formation of Metal Silicide Nanodots on Ultrathin SiO2 forFloating Gate Application Reviewed

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

      Vol. 154   page: 95-100   2009.4

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    We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature.
    Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique.
    Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

  242. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation Reviewed

    Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hideki Murakami, and Seiichi Miyazaki H. Furukawa, S. Higashi, T. Okada, H. Murakami, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 48   page: 04C011 (4 pages)   2009.4

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    We have investigated the generation of high-power-density thermal plasma jet (TPJ) as a heat source for the annealing of a Si wafer surface in a millisecond period and the formation of an ultrashallow junction. The power density of DC arc discharge thermal plasma jet markedly increased from 11.0 to 32.3 kW/cm2 with increasing spacing between an anode and a cathode (ES) from 1.0 to 3.0 mm. The increase in TPJ power density with ES was mainly due to the increase in plasma temperature from about 16000 to 23000 K. By applying this high-power-density TPJ, the Si wafer was heated by more than 700 K within 10 ms. Using this annealing technique, we demonstrated the dopant activation of an arsenic-implanted Si wafer and successfully obtained a low sheet resistance of 262 Ω/sq at an annealing temperature as high as 1207 K without a significantly enhanced diffusion of the implantation profile.

  243. A Novel Millisecond Crystallization Technique Using Si Micro Liquid

    N. Koba, S. Higashi, T. Okada, H. Murakami, S. Miyazaki

    The 5th International Thin-Film Transistor Conference 2009(France)     page: 263-366   2009.3

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  244. Improvement of Bond Structure and Electrical Properties of Low-Temperature Deposited SiO2 Films by Thermal Plasma Jet Induced Millisecond Annealing

    Y. Hiroshige, S. Higashi, H. Kaku, H. Furukawa, T. Okada, S. Miyazaki

    Plasma Science Symposium 2009 and 26th Symposium on Plasma Processing (PSS-2009/SPP-26)(Nagoya)   Vol. P3-41   page: 496-497   2009.2

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  245. Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO2

    A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S.Higashi, S. Miyazaki

    The 2nd International Conference on Plasma-Nano Technology & Science(Nagoya)   Vol. P-09   2009.1

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  246. Temperature Dependence of Electron Transport between Quantum Dots and Electron Gas

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki

    International Symposium on Nanoscale Transport and Technology(Kanagawa)   Vol. PTu-09   2009.1

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  247. Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

    16. Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 49 ( 1 ) page: 090435   2009

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  248. Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor

    Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S.Miyazaki

    Jour. of Phys.: Cond. Mat.   Vol. 150   page: 022071   2009

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  249. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories

    K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E92-C ( 5 ) page: 616-619   2009

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  250. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique

    K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, S. Miyazaki

    Trans. of MRS-J.   Vol. 34 ( 2 ) page: 309-312   2009

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  251. Photoemission Study of Fully Silicided Pd2Si Gates with Interface Modification Induced by Dopants

    T. Hosoi, A. Ohta, S. Miyazaki, H. Shiraish, K. Shibahara

    Appl. Phys. Lett.   Vol. 94   page: 192102   2009

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  252. Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs

    21. M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, T. Chikyo, K. Yamada, T. Aoyama, Y. Nara, Y. Ohji

    IEEE Electron Device Lett.   Vol. 30 ( 5 ) page: 466-468   2009

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  253. Charge Strage Characteristics of Hybrid Nanodots Floating Gate

    S. Miyazaki, K. Makihara, M. Ikeda

    ECS Trans.   Vol. 25 ( 7 ) page: 433-439   2009

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  254. Physics of Nano-contact Between Si Quantum Dots and Inversion Layer

    19. Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

    ECS Trans.   Vol. 25 ( 7 ) page: 463-469   2009

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  255. Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface

    S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda, S. Miyazaki

    ECS Trans.   Vol. 19 ( 22 ) page: 35-43   2009

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  256. Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection

    J. Xu, K. Makihara, H. Dek, S. Miyazaki

    Solid State Communications   Vol. 149   page: 739-742   2009

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  257. Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate

    T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, K. Shibahara

    Appl. Phys. Lett.   Vol. 94   page: 192102   2009

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  258. The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics Reviewed

    J. D&#261;browski, S. Miyazaki, S. Inumiya, G. Kozłowski, G. Lippert, G. Łupina, Y. Nara, H.-J. M&uuml;ssig, A. Ohta, and Y. Pei

    Materials Science Forum   Vol. 608   page: 55-109   2009

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    Electrical properties of thin high-k dielectric films are influenced (or even governed)
    by the presence of macroscopic, microscopic and atomic-size defects. For most applications,
    a structurally perfect dielectric material with moderate parameters would have sufficiently
    low leakage and sufficiently long lifetime. But defects open new paths for carrier
    transport, increasing the currents by orders of magnitude, causing instabilities due to charge
    trapping, and promoting the formation of defects responsible for electrical breakdown events
    and for the failure of the film. We discuss how currents flow across the gate stack and how
    damage is created in the material. We also illustrate the contemporary basic knowledge on
    hazardous defects (including certain impurities) in high-k dielectrics using the example of a
    family of materials based on Pr oxides. As an example of the influence of stoichiometry on
    the electrical parameters of the dielectric, we analyze the effect of nitrogen incorporation into
    ultrathin Hf silicate films.

  259. Generation of High Density Thermal Plasma Jet and Its Application to Millisecond Annealing of Si Wafer Surface for Shallow Junction Formation

    H. Furukawa, S. Higashi, T. Okada, H. Murakami, S. Miyazaki

    30th International Symposium on Dry Process (DPS 2008) (Tokyo)   Vol. 8-2   page: 267-268   2008.11

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  260. Characterization of Chemical Bonding Features in HfGdxOy film formed by MOCVD using DPM precursors

    D. Kanme, A. Ohta, R. Yougauchi, H. Murakami, S. Higashi, S. Miyazaki

    2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)(Tokyo)   Vol. P1-4   page: 25-26   2008.11

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  261. XPS Study of TiAlN/HfSiON Gate Stack - Impact of Al Redistribution on Effective Work Function Change-

    A. Ohta, T. Mori, H. Yoshinaga, H. Murakami, S. Miyazaki, M. Kadoshima, Y. Nara

    2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)(Tokyo)   Vol. S4-4   page: 75-76   2008.11

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  262. Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto

    4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008)(Sendai)   Vol. Z-01   page: 53-54   2008.9

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  263. Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfTixOy/Pt System

    A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, M. Tanioku, M. Horikawa, A. Ogishima

    2008 International Conference of Solid State of Device and Materials (SSDM2008)(Tsukuba)   Vol. A-5-3   page: 684-685   2008.9

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  264. Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots

    M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara, S. Miyazaki

    2008 International Conference on Solid State Devices and Materials (SSDM)(Tsukuba)   Vol. H-1-6   page: 182-183   2008.9

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  265. Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO2

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki

    4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008)(Sendai)   Vol. P-08   page: 37-38   2008.9

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  266. AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO2 and Si-QDs Surfaces

    K. Makihara, M. Ikeda, S. Higashi, Y. Hata, A. Kuroda, S. Miyazaki

    4th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2008)(Sendai)   Vol. P-09   page: 39-40   2008.9

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  267. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation

    H. Furukawa, S. Higashi, T. Okada, H. Murakami, S. Miyazaki

    Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008)(Tsukuba)   Vol. A-9-2   page: 852-853   2008.9

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  268. Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe

    The European Materials Research Society (E-MRS) 2008 Fall Meeting (Poland)     page: 66-67   2008.9

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  269. Application of Thermal Plasma Jet Annealing to Channel Crystallization and Doping for Thin Film Transistor Fabrication

    H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H.Furukawa, S. Miyazaki

    2008 The Fifteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'08)(Tokyo)   Vol. 3-3   page: 33-36   2008.8

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  270. Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique Reviewed

    T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui1, A. Masuda1, M. Kondo1

    Jpn. J. Appl. Phys.   Vol. 47   page: 6949-6952   2008.8

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    Defect concentration in polycrystalline silicon (poly-Si) films formed by thermal plasma jet (TPJ) annealing and excimer laser annealing (ELA) has been investigated on basis of the electrical property and spin density (Ns). Phosphorus-doped Si films with an average concentration of 4.3 ×1017 cm-3 and crystallized by TPJ annealing showed electrical conductivity (σ) values of 2.0 ×10-3–7.8 ×10-2 S/cm, whereas ELA Si films show much lower σ values of (1.6–4.5) ×10-6 S/cm regardless of irradiated laser energy density. Ns values in TPJ annealed Si films were (2.3–4.5) ×1017 cm-3, which are roughly one order of magnitude lower than those of ELA films. These results indicate that dangling bonds in crystallized films are the predominant traps and they strongly govern the electrical property. TPJ crystallization offers the possibility of fabricating poly-Si films with a low defect concentration presumably owing to the much lower cooling rate (∼105 K/s) during crystalline growth than that of ELA (∼1010 K/s). By treating TPJ annealed films with hydrogen plasma for 10 min at 250 °C, a defect density as low as 5.0 ×1016 cm-3 is achieved.

  271. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories

    K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, S. Miyazaki

    2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008) (Hokkaido)   Vol. 4A.1   page: 77-80   2008.7

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  272. Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4

    H. Kaku, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), (Sapporo)   Vol. 5B.3   page: 155-158   2008.7

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  273. Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories

    M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara, S. Miyazaki

    The 2008 International Meeting for Future of Electron Devices, Kansai (IMFEDK)(Osaka)   Vol. B-5   page: 43-44   2008.5

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  274. Characterization of Thermal Stability of HfO2/SiON/Ge(100) Stacked Structure by using Photoemission Spectroscopy

    A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki

    4th International SiGe Technology and Device Meeting (ISTDM2008)(Taiwan)   Vol. Tsu-S7-04   page: 88-89   2008.5

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  275. Photoemission Study of Ultrathin Germanium Oxide/Ge(100) Interfaces

    H. Murakami, M. Miura, A. Ohta, R. Yougauchi, S. Higashi, S. Miyazaki

    4th International SiGe Technology and Device Meeting (ISTDM2008)(Taiwan)   Vol. Mon-P1-19   page: 165-166   2008.5

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  276. Selective Growth of Self-Assembling Si and SiGe Quantum Dots

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki

    4th International SiGe Technology and Device Meeting (ISTDM2008)(Taiwan)   Vol. Mon-P1-10   page: 147-148   2008.5

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  277. Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors Reviewed

    M. Sato1, C. Tamura, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, R. Hasunuma, . Aoyama1, Y. Nara, and Y. Ohji1

    Jpn. J. Appl. Phys.   Vol. 47   page: 3326-3331   2008.5

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    We have investigated the time dependent dielectric breakdown (TDDB) for a high-k/metal gate p-type metal–oxide–semiconductor field effect transistors (pMOSFETs) under inversion stress. We have found that electrons, injected from the cathode, are minority carriers in the gate leakage current and play an important role in determining TDDB lifetime and that the existence of oxygen vacancies in HfSiON, decide the electron current mechanism in HfSiON. Since electrons from the cathode flow as a tunneling current with the effective barrier height determined by the energy level of the oxygen vacancies in the HfSiON, electron current is strongly dependent on the effective work function of the metal gate. That implies that a higher work function should be effective to suppress of electron current, due to the elevated barrier height for electrons. Therefore, the formation of a high work function metal gate is essential, not only for low threshold voltage of pMOSFETs but also to achieve long TDDB lifetimes.

  278. Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics Reviewed

    K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 47   page: 3099-3102   2008.4

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    We fabricated nanometer-scale Ni dots and NiSi dots on an ultrathin SiO2 layer using remote H2 plasma and demonstrated the feasibility of remote H2 plasma treatment for controlling the areal density of the dots. 1.8-nm-thick-Ni/SiO2 and Ni/Si-quantum dots (QDs)/SiO2 layer were treated with remote H2 plasma generated by the inductive coupling between an external single-turn antenna and a 60 MHz generator. When a Ni/SiO2 was treated with remote H2 plasma at room temperature, Ni nanodot density could be controlled in the range of 109 to 1012 cm-2 by adjusting the plasma conditions. After the remote H2 plasma treatment of the Ni/Si-QDs, the formation of electrically isolated NiSi dots with an areal density of ∼1011 cm-2 was confirmed. These results imply that hydrogen radicals generated in H2 plasma play an important role in improving surface diffusion caused by energy reduction at the Ni/SiO2 interface. The surface potential of the Ni nanodots changes stepwise with the tip bias. This is due to the multistep electron injection into and extraction of Ni nanodots. The minimum tip biases for electron injection into Ni nanodots, NiSi dots and Si-QDs were -0.2, -0.7, and -1.0 V, respectively. This reflected the difference in electron affinity among Ni, NiSi and Si.

  279. Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm Reviewed

    M. Sato1, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, C. Tamura, R. Hasunuma, S. Inumiya, T.Aoyama, Y. Nara1, and Y. Ohji1

    Jpn. J. Appl. Phys.   Vol. 47   page: 2354-2359   2008.4

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    We have undertaken a comprehensive analysis of the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) reliabilities of high-k/metal gate stacks. In the case of PBTI, electron traps constituted the main factor in drain current degradation resulting in an initial jump in threshold voltage shift due to fast transient electron traps, which depended only on stress voltage, because of the formation of positive oxygen vacancies near the cathode. However, in the case of NBTI, both interface state degradation (including interface hole traps) and hole traps in bulk HfSiON should be considered. We have clarified that the interface layer quality is related to not only the high transconductance but also the hole traps. The use of a high-quality interfacial layer, such as a wet oxide interface, represents a promising solution for the improvement of NBTI lifetime.

  280. In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation Reviewed

    H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 47   page: 2460-2463   2008.4

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    An in-situ measurement technique for the temperature profile of a Si wafer during millisecond rapid thermal annealing has been developed. By analyzing the oscillation observed in transient reflectivity of the Si wafer during annealing, we obtain a transient temperature profile with a millisecond time resolution. Since this measurement is based on optical interference, a highly sensitive temperature measurement with an accuracy of 2 K is expected. Using this measurement technique, we controlled Si wafer surface temperature during thermal plasma jet irradiation with the heating and cooling rates in the order of 104–105 K/s.

  281. Formation of Source and Drain for Polycrystalline Si Thin Film Transistors Using Thermal Plasma Jet Induced Impurity Activation

    H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, H. Murakami, S. Miyazaki

    International TFT Conference 2008(Korea)   Vol. 9.6   page: 331-334   2008.1

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  282. Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases

    R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 47 ( 4 ) page: 3103-3106   2008

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  283. Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet

    T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, S. Miyazaki

    Solid-State Electronics   Vol. 52   page: 377-380   2008

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  284. Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing

    K. Sakaike, S. Higashi, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 516   page: 3595-3600   2008

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  285. Nucleation Study of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films Deposited by VHF-ICP

    T. Karakawa, S. Higashi, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 516   page: 3497-3501   2008

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  286. Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet

    T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 516   page: 3680-3683   2008

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  287. In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing

    H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki

    ECS Trans.   Vol. 13 ( 1 ) page: 31-36   2008

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  288. Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory

    T. Okada, S. Higashi, H. Kaku, H. Furukawa, S. Miyazaki

    ECS Trans.   Vol. 16 ( 9 ) page: 177-182   2008

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  289. Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4

    T. Sakata, K. Makihara, H. Deki, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 517 ( 1 ) page: 216-218   2008

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  290. Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate

    T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, K. Shibahara

    Surface and Interface Analysis.   Vol. 40   page: 1126-1130   2008

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  291. Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

    S. Miyazaki, K. Makihara, M. Ikeda

    Thin Solid Films   Vol. 517 ( 1 ) page: 41-44   2008

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  292. Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics

    K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 517 ( 1 ) page: 306-308   2008

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  293. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki

    ECS Trans.   Vol. 16 ( 10 ) page: 255-260   2008

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  294. Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO2 Structure as Evaluated by AFM/KFM

    K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E91-C ( 5 ) page: 712-715   2008

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  295. Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-

    K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki

    ECS Trans.   Vol. 13 ( 2 ) page: 21-27   2008

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  296. Photoemission Study of Metal/HfSiON Gate Stack

    S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima, Y. Nara

    ECS Trans.   Vol. 13 ( 2 ) page: 67-73   2008

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  297. Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process

    K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M. Sato, A. uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, R. Hasunuma

    ECS Trans.   Vol. 16 ( 5 ) page: 521-526   2008

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  298. Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gate

    M. Kadoshima, T. Matsuki, M. Sato, T. Aminaka, E. Kurosawa, A. Ohta, H. Yoshinaga, S. Miyazaki, K. Shiraishi, K. Yamabe, K. Yamada, T. Aoyama, Y. Nara, Y. Ohji

    International Electron Device Meeting 2007 (IEDM)(Washington DC)   Vol. 20.4   page: 531-534   2007.12

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  299. Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms Reviewed

    K. Iwamoto, T. Nishimura1, A. Ohta2, K. Tominaga, T. Nabatame, S. Miyazaki2, and A. Toriumi1,3

    Jpn. J. Appl. Phys.   Vol. 46   page: 7666-7670   2007.12

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    A high-temperature oxygen annealing (HiTOA) process has been developed to recover the degradation of the electrical characteristics due to the nitrogen incorporation into the HfAlOx film. The HiTOA process was carried out after the introduction of the nitrogen atoms. This process affected the bonding configuration of the nitrogen atom coordinated to the hafnium atom, and reconverted the nitrogen atom into an oxygen one. Therefore, this substitution markedly recovered the gate leakage current through the HfAlOxN film with a slight increase in the equivalent oxide thickness. Additionally, it significantly improved the effective mobility of n+ polycrystalline silicon (poly-Si) gate n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs).

  300. Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization Technique

    T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda, M. Kondo

    2007 Int. Symposium on Dry Process (DPS2007)(Tokyo)   Vol. 8-03   page: 157-158   2007.11

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  301. Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors

    M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi, S. Miyazaki

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai)   Vol. P-08   page: 35-36   2007.11

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  302. High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H2-diluted GeH4

    S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai)   Vol. P-07   page: 33-34   2007.11

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  303. Formation of PtSi Nanodots Induced by Remote H2 Plasma

    K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi, S. Miyazaki

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai   Vol. P-09   page: 37-38   2007.11

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  304. Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack

    A. Ohta, H. Yoshinaga, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima, Y. Nara

    Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. OA3-1   page: 215-216   2007.11

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  305. Evaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures – Thickness Dependence in Bottom SiO2 layer

    H. Yoshinaga, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki, M. Kadoshima, Y. Nara,

    Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. P.-47   page: 181-182   2007.11

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  306. The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3

    R. Yougauchi, A. Ohta, Y. Munetaka, H. Murakami, S. Higashi, S. Miyazaki

    Fifth International Symposium on Control of Semiconductor Interfaces, (ISCSI-V)(Tokyo)   Vol. OA3-8   page: 227-228   2007.11

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  307. High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films

    H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki

    5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo)   Vol. OA1   page: 51-52   2007.11

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  308. High Rate Growth of Highly-Crystallized Ge Films on Quartzfrom VHF Inductively-Coupled Plasma of GeH4 + H2 Reviewed

    T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

    Materials Science Forum   Vol. 561-565   page: 1209-1212   2007.10

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    We have studied uniform growth of crystalline Ge films on quartz plate from VHF(60MHz)-ICP of 10% GeH4 diluted with H2 in the temperature range from 150 to 350&ordm;C. By
    optimizing total gas flow rate, gas pressure, VHF power and antenna-substrate distance, the growth
    rate as high as 7.4nm/s was obtained at 150&ordm;C and increased gradually up to ~7.9nm/s at 350&ordm;C. The
    crystallinity, which was evaluated by Raman scattering measurements as an integrated intensity ratio
    of TO phonons in crystalline phase to those in disordered phase, reached a value as high as ~93 % at350&ordm;C, but degraded down to 64% at 150&ordm;C as a result of the formation of a 60~70nm-thick amorphous incubation (A. I.) layer on quartz. By applying a two-step deposition method at 150&ordm;C, in which the GeH4 concentration was selected to be 0.6% for the crystalline nucleation in the first 10s
    deposition, being as thin as 10nm in thickness, and then changed to 10% GeH4 for the high rate growth, the crystallinity was improved to 78% with keeping an effective growth rate as high as 7.5nm/s, because of a significant increase in the growth rate after the crystalline nucleation.

  309. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique Reviewed

    R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda,H. Murakami, S. Higashi and S. Miyazaki

    Materials Science Forum   Vol. 561-565   page: 1213-1216   2007.10

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    We have formed high density nanodots of nickel silicide (NiSi) on ultrathin SiO2 and characterized their electronic charged states by using an AFM/Kelvin probe technique. Si quantum dots (Si-QDs) with an areal dot density of ~2.5x1011cm-2 were self-assembled on
    ~3.6nm-thick thermally-grown SiO2 by controlling the early stages of LPCVD using pure SiH4 gas. Subsequently, electron beam evaporation of Ni was carried out as thin as ~1.7nm in equivalent thickness at room temperature and followed by 300&ordm;C anneal for 5min in vacuum.
    XPS and AFM measurements confirm the formation of NiSi dots with an average dot height of ~8nm. After removal of Ni residue on SiO2 by a dilute HCl solution, bias conditions required for electron charging to NiSi dots were compared with those to pure Si-QDs dots and Ni dots.
    The surface potential changes stepwise with respect to the tip bias due to multistep electron injection and extraction of NiSi nanodots. In addition, it is confirmed that charge retention characteristics of NiSi dots are superior to those of Si-QDs with the almost same size.

  310. Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics

    K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi, S. Miyazaki

    2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. I-8-1   page: 1108-1109   2007.9

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  311. In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

    H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki

    Solid State Device and Materials (SSDM2007)(Tsukuba)   Vol. P-1-27L   page: 376-377   2007.9

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  312. Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases

    R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki

    2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. I-8-3   page: 1112-1113   2007.9

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  313. Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots

    K. Okuyama, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba)   Vol. E-1-4   page: 106-107   2007.9

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  314. Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films

    H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki

    The Fourteenth International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES(Awaji)   Vol. 3-3   page: 33-36   2007.7

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  315. Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM

    K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) (Korea)   Vol. J-R22W   page: 251-254   2007.6

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  316. Phosphorus Doping to Si Quantum Dots for Floating Gate Application

    K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi, S. Miyazaki

    2007 Silicon Nanoelectronics Workshop(Kyoto)   Vol. 5-3   page: 161-162   2007.6

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  317. Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS

    M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

    The 2008 Symposium on VLSI Technology(Kyoto)   Vol. 5A-1   page: 66-67   2007.6

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  318. Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack

    A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

    15th biannual Conference on Insulating Films on Semiconductors 2007 (INFOS2007)(Greece)   Vol. session7 7.36   page: 251-254   2007.6

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  319. Impact of Boron Doping to Si Quantum Dots on Light Emission Properties

    K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki

    2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) (Korea)   Vol. J-R23M   page: 135-138   2007.6

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  320. Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics Reviewed

    N. Umezawa1, K. Shiraishi2,1, S. Miyazaki3, T. Ohno1, T. Chikyow1, K. Yamada4,1, and Y. Nara5

    Jpn. J. Appl. Phys.   Vol. 46   page: 3507-3509   2007.6

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    Hafnium (Hf) 4f core-level binding energy shifts caused by Hf–N bond formation in hafnium oxynitride (HfOxNy) have been studied by first-principles calculations. Our computational results clearly showed that the Hf 4f core-level binding energies are reduced by 0.36 and 0.65 eV for Hf–N and N–Hf–N bond formation, respectively. These results are in good agreement with chemical shifts observed in the X-ray photoelectron spectroscopy (XPS) of HfOxNy films deposited on a Si(100) substrate. In the present work, we demonstrate that the first-principles calculation is a useful tool to clarify chemical environments of Hf-based high-k gate dielectrics.

  321. Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics

    K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    5th International Conference on Silicon Epitaxy and Heterostructures(France)   Vol. 22P 2-15   page: 313-314   2007.5

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  322. Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams Reviewed

    Akira Uedono, Tatsuya Naito, Takashi Otsuka, Kenichi Ito, Kenji Shiraishi, Kikuo Yamabe, Seiichi Miyazaki1, Heiji Watanabe2, Naoto Umezawa3, Toyohiro Chikyow3, Toshiyuki Ohdaira4, Ryoichi Suzuki4, Yasushi Akasaka5,, Satoshi Kamiyama5, Yasuo Nara5, and Keisaku Yamada6

    Jpn. J. Appl. Phys.   Vol. 46   page: 3214-3218   2007.5

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    The impact of TiN deposition on thin high-k (HfO2 and HfSiON) films formed on Si substrates was studied using monoenergetic positron beams. For the predeposition sample, the positrons implanted into Si diffuse toward the high-k/Si interface under the influence of the electric field, suggesting the presence of negative charges in the high-k films. After TiN was deposited on HfO2, positive charges were introduced at the TiN/HfO2 interface, which were associated with the incorporation of nitride into HfO2, resulting in the formation of positively charged oxygen vacancies (VOs). From the isochronal annealing experiments for TiN/HfSiON/Si, it was found that positively charged defects (such as VO) were introduced into HfSiON after annealing at 700–900 °C. These defects were introduced by the interaction between TiN and HfSiON, resulting in the formation of polycrystalline TiO2 at the interface. The positively charged defects were annealed out at 1100 °C, but the dielectric properties of HfSiON degraded.

  323. Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4

    T. Sakata, K. Makihara, H. Deki, S. Higashi, S. Miyazaki

    5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)(France)   Vol. 21P1-7   page: 214-215   2007.5

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  324. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots Reviewed

    J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    Solid State Phenomena   Vol. 121-123   page: 557-560   2007.5

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    Light emitting diode with MOS structures containing multiple-stacked Si quantum dots(QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was
    increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDsand the improvement of EL intensity was demonstrated.

  325. Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2

    K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi, S. Miyazaki,

    The 2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)(Osaka)   Vol. PB-5   page: 121-122   2007.4

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  326. Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON Reviewed

    Naoto Umezawa, Kenji Shiraishi1, Seiichi Miyazaki2, Akira Uedono1, Yasushi Akasaka3, Seiji Inumiya3, Ryu Hasunuma1, Kikuo Yamabe1, Hiroyoshi Momida4, Takahisa Ohno4, Kenji Ohmori, Toyohiro Chikyow, Yasuo Nara3, and Keisaku Yamada5

    Jpn. J. Appl. Phys.   Vol. 46   page: 1891-1894   2007.4

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    Silicon dangling bonds (Si-DBs) in HfSiOx have been studied using first-principles calculations. Interestingly, our computational result revealed that the Si-DB-related gap state in HfSiOx locates in a much lower energy region than that in SiOx. This is because Hf atoms enhance the ionic character of the HfSiOx film, which in turn induces a positive charge at the Si site. We consider that the low-lying Si-DB level, which is now very near the N 2p state, contributes to the formation of strong Si–N bonds in HfSiON. The lower shift of the Si-DB level upon cation metal inclusion can be useful information not only for improving the electric properties of high-k gate stacks but also for developing prominent silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memories where controllability of the charge trap level is a crucial issue.

  327. Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation Reviewed

    Kohei Sakaike, Seiichiro Higashi, Hirotaka Kaku, Hideki Murakami, and Seiichi Miyazaki

    Jpn. J. Appl. Phys.   Vol. 46   page: 1276-1279   2007.3

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    Rapid thermal annealing of microcrystalline Si (&micro;c-Si) films induced by cw semiconductor diode laser (SDL) irradiation has been investigated. Owing to the higher absorption coefficient of &micro;c-Si than that of amorphous Si (a-Si), 1.2-&micro;m-thick &micro;c-Si films are melted and recrystallized within 3 ms, whereas no phase transformation of a-Si films is observed under the same annealing condition. The annealed Si films show a high crystalline volume fraction of 97% and [111] preferential orientation. Characteristic triangle surface structures aligned to the laser scanning direction, which suggests that the lateral solidification from molten Si is observed.

  328. Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Its Application

    S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki

    5th International Symposium Nanotechnology (JAPAN NANO 2007)(Tokyo)   Vol. P3-2   page: 144-145   2007.2

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  329. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films

    S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, S. Miyazaki

    3rd International TFT Conference(Italy)   Vol. P21   page: 204-207   2007.1

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  330. Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet

    T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H.Murakami, S. Miyazaki

    3rd International TFT Conference(Italy)   Vol. 5a.3   page: 82-85   2007.1

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  331. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference, Rome, Italy, Jan.

    S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, S. Miyazaki,

    3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, P21, pp     page: 204-207.   2007.1

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  332. Theoretical Studies on Metal/High-k Gate Stacks

    K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada

    ECS Trans.   Vol. 6 ( 1 ) page: 191-204   2007

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  333. Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

    K. Sakaike, S. Higashi, H. Kaku, H. Murakami, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 46 ( 3B ) page: 1276-1279   2007

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  334. Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet

    T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 515   page: 4897-4900   2007

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  335. Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation

    T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki, T. Sameshima

    Trans. of MRS-J   Vol. 32 ( 2 ) page: 465-468   2007

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  336. Performance Improvement of HfAlOxN n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms

    K. Iwamoto, T. Nishimura, A. Ohta, K. Tominaga, T. Nabatame, S. Miyazaki, A. Toriumi

    Jpn. J. Appl. Phys.   Vol. 46 ( 12 ) page: 7666-7670   2007

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  337. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    A. Uedono, S. Inumiya, T. Matsuki, T. Aoyama, Y. Nara, S. Ishibashi, T. Ohdaira, R. Suzuki, S. Miyazaki, K. Yamada

    J. Appl. Phys   Vol. 102   page: 054511-1 – 054511-7   2007

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  338. Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes

    M. Kadoshima, Y. Suginta, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

    ECS Trans.   Vol. 11 ( 4 ) page: 169-180   2007

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  339. Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack

    A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

    Microelec. Eng.   Vol. 84   page: 2386-2389   2007

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  340. Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

    S. Miyazaki, M. Ikeda, K. Makihara

    ECS Trans.   Vol. 11 ( 6 ) page: 233-243   2007

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  341. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique

    R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

    Materials Science Forum   Vol. 561-565   page: 1213-1216   2007

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  342. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

    J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, S. Miyazaki

    Solid State Phenomena   Vol. 121-123   page: 557-560   2007

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  343. Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams

    A. Uedono, R. Hasumuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanab, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada

    ECS Trans.   Vol. 11 ( 4 ) page: 81-90   2007

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  344. Role of the Ionicity in Defect Formation in Hf-based Dielectrics

    N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, A. Oshiyama, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara, K. Yamada

    ECS Trans.   Vol. 11 ( 4 ) page: 199-211   2007

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  345. Tight distribution of dielectric characteristics of HfSiON in metal gate devices

    R. Hasumuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

    ECS Trans.   Vol. 11 ( 4 ) page: 3-11   2007

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  346. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

    1. A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe

    J. Appl. Phys.   Vol. 100   page: 064501-1 – 064501-5   2006

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  347. Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

    S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5B ) page: 4313-4320   2006

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  348. Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate

    T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5B ) page: 4355-4357   2006

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  349. In-Situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure

    A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, T. Sameshima

    Thin Solid Films   Vol. 508   page: 53-56   2006

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  350. High-rate Growth of Highly-crystallized Si Films from VHF Inductively-Coupled Plasma CVD

    N. Kosku, S. Miyazaki

    Thin Solid Films   Vol. 511-512   page: 265-270   2006

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  351. The Application of Very High Frequency Inductively-coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films

    N. Kosku, S. Miyazaki

    J. Non-Cryst. Solid   Vol. 352   page: 911-914   2006

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  352. Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4

    T. Sakata, K. Makihara, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 515 ( 12 ) page: 4971-4974   2006

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  353. An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy

    N. Umezawa, K. Shiraishi, Y. Akasaka, S. Inumiya, A. Uedono, S. Miyazaki, T. Chikyow, T.Ohno, Y. Nara, K. Yamada

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 129-132   2006

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  354. Photoemission Study of Ultrathin HfSiON/Si(100) Systems

    A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 125-128   2006

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  355. Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

    A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

    Jour. of Sur. Sci. and Nanotech.   Vol. 4   page: 174-179   2006

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  356. Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties

    H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi, S. Miyazaki

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 157-160   2006

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  357. Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience

    H. Nakagawa, A. Ohta, M. Taira, H. Abe, H. Murakami, S. Higashi, S. Miyazaki

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 153-156   2006

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  358. Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiN/poly-Si

    M. Taira, A. Ohta, H. Nakagawa, S. Miyazaki, K. Yoneda, M. Horikawa, K. Koyama

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 149-152   2006

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  359. Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy

    Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki

    Trans. of the Mat. Res. Soc. of Japan   Vol. 31 ( 1 ) page: 145-148   2006

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  360. Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

    S. Miyazaki, A. Ohta, S. Inumiya, Y. Nara, K. Yamada

    ECS Trans.   Vol. 3 ( 3 ) page: 171-180   2006

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  361. Physics of Metal/High-k Interfaces

    T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, A. Ohta, H. Iwai, K. Yamada, T. Nakaoka

    Physics of Metal/High-k Interfaces   Vol. 3 ( 3 ) page: 129-140   2006

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  362. Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs

    T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi, S. Miyazaki

    Trans. of MRS-J   Vol. 31 ( 1 ) page: 137-140   2006

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  363. Study of Charged States of Si Quantum Dots with Ge Core

    K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki

    ECS Trans.   Vol. 3 ( 7 ) page: 257-262   2006

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  364. Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories

    S. Miyazaki, M. Ikeda and K. Makihara

    ECS Trans.   Vol. 2 ( 1 ) page: 157-164   2006

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  365. Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices

    K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi, S. Miyazaki

    Trans. of MRS-J   Vol. 31 ( 1 ) page: 133-136   2006

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  366. Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique

    J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 508 ( 1-2 ) page: 190-194   2006

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  367. Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

    K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 508 ( 1-2 ) page: 186-189   2006

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  368. Characterization of HfSiON gate dielectrics using monoenergetic positron beams

    1. A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow

    J. Appl. Phys.   Vol. 99   page: 054507-1 – 054507-6   2006

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  369. Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment

    K. Makihara, H. Deki, H. Murakami, S. Higasi, S. Miyazaki

    Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page: 75-78   2005

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  370. Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors

    S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara, K. Torii

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 197-200   2005

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  371. Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures

    S. Miyazaki, T. Shibaguchi, M. Ikeda

    Mat. Res. Soc. Symp. Proc.   Vol. 830   page: 249-254   2005

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  372. Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots

    T. Shibaguchi, M. Ikeda, H. Murakami, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page: 709-712   2005

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  373. Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy

    F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa, K. Koyama

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 213-217   2005

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  374. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet

    S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 487   page: 122-125   2005

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  375. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet

    S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, S. Miyazaki

    Thin Solid Films   Vol. 487   page: 122-125   2005

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  376. High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD

    N. Kosku, S. Miyazaki

    Trans. of MRS-J   Vol. 30 ( 1 ) page: 279-282   2005

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  377. Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique

    H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh, T. Sameshima

    Trans. of MRS-J   Vol. 30 ( 1 ) page: 283-286   2005

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  378. Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor

    S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando, T. Sameshima

    Jpn. J. Appl. Phys.   Vol. 44 ( 3 ) page: L108-L110   2005

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  379. Influence of Substrate dc Bias on Crystallinity of Silicon Films Grown at a High Rate from Inductively-coupled Plasma CVD

    N. Kosku, H. Murakami, S. Higashi, S. Miyazaki

    Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page: 39-42   2005

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  380. A New Crystallization Technique of Si Films on Glass Substrate Using Thermal Plasma Jet

    H. Kaku, S. Higashi, H. Taniguchi, H. Murakami, S. Miyazaki

    Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page: 8-11   2005

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  381. Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique

    K. Makihara, Y. Okamoto, H. Murakami, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page: 705-708   2005

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  382. Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD

    Y. Okamoto, K. Makihara, H. Murakami, S. Higasi, S. Miyazaki

    Appl. Surf. Sci.   Vol. 244 ( 1-4 ) page: 12-15   2005

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  383. Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors

    Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 205-208   2005

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  384. Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors

    S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara, K. Torii

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 197-200   2005

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  385. The Role of Oxygen-related Defects on the Reliabilities of HfO2-based High-k Gate Insulators

    K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima, T. Arikado

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 191-195   2005

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  386. Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy

    F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa, K. Koyama

    Trans. of the Mat. Res. Soc. of Japan   Vol. 30 ( 1 ) page: 213-217   2005

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  387. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack

    Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, Y. Nara

    ECS Trans.   Vol. 1 ( 1 ) page: 163-172   2005

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  388. Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

    H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page: 640-645   2005

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  389. Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate

    H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi, S. Miyazaki

    IEICE Trans. on Electronics   Vol. E88-C ( 4 ) page: 646-650   2005

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  390. Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core

    Y. Darma, Hideki Murakami, S. Miyazaki

    Appl. Surf. Sci.   Vol. 224   page: 156-159   2004

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  391. New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors

    A. Teshima, S. Miyazaki,

    Jpn. J. Appl. Phys.   Vol. 43 ( 8A ) page: 5129-5133   2004

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  392. Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe

    K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi, S. Miyazaki

    Thin Solid Films   Vol. 457   page: 103-108   2004

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  393. Analysis of Soft Breakdown of 2.6-4.9nm-Thick Gate Oxides

    W. Mizubayashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 43 ( 10 ) page: 6925-6929   2004

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  394. Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8nm-thick Gate Oxides, IEEE Electron Device Lett.

    W. Mizubayashi, Y. Yoshida, H. Murakami, S. Miyazaki, M. Hirose

    IEEE Electron Device Lett   Vol. 25 ( 5 ) page: 305-307   2004

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  395. Praseodymium silicate formed by postdeposition high-temperature annealing

    A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, S. Miyazaki

    Appl. Phys. Lett.   Vol. 85 ( 22 ) page: 5322-5324   2004

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  396. Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)

    A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 43 ( 11B ) page: 7831-7836   2004

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  397. Photoelectron Spectroscopy of ultrathin yttrium oxide films on Si(100)

    A. Ohta, M. Yamaoka, S. Miyazaki

    Microelec. Eng.   Vol. 72   page: 154-159   2004

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  398. Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100)

    H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 43 ( 11B ) page: 7890-7894   2004

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  399. Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2 Reviewed

    S. Miyazaki, K. Morino and M. Hirose

      Vol. 76-77   page: 149-152   2001

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    Incorporation of boron and fluorine atoms in to an ultrathin SiO2 layer during a p+-polySi gate fabrication process with BF2+ or B+ implantation and its influence on the SiO2 bonding network have been studied by FT-IR and XPS in conjunction with SiO2 thinning by dilute HF etching. The analysis of F1s core spectrum measured at each SiO2 thinning step shows that fluorine atoms pile up in the SiO2 network near the SiO2/Si interface in bonding forms of mainly F-SiO3 or F-BO3 units and partly F-O units. Also, boron pile-up near the interface has been confirmed from the depth profiling of the IR absorption bands due to B-F and B-O bonds. The thickness dependence of the LO phonon frequency for the oxides with B or B/F incorporation indicates that not only fluorine atoms but also three-coordinate boron atoms in the interfacial region relax built-in compressive stress in the oxide network near the interface

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Books 12

  1. 化学便覧 第7版 応用化学編

    宮崎誠一( Role: Joint author)

    日本化学会編,丸善出版(株)  2014 

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    Ⅱ基礎的化学技術/材料,7章 電子・光材料プロセス技術
    7.3.2 CVD技術

  2. 薄膜工学(第2版)分担執筆 第2章3節「化学気相成長法」

    宮崎誠一( Role: Sole author)

    丸善出版  2011.6 

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    Language:Japanese

  3. マイクロ・ナノ領域の超精密技術第3章2節「半導体デバイス」ⅠSi系(極微細化の観点を中心にして)

    宮崎誠一( Role: Sole author)

    オーム社  2011.3 

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    Language:Japanese

  4. 実用薄膜プロセス―機能創製・応用展開― 第1編「創製技術」第5章「CVD」

    宮崎誠一( Role: Sole author)

    技術教育出版社  2009 

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    Language:Japanese

  5. 次世代半導体メモリの最新技術 第6章

    ( Role: Joint author)

    シーエムシー出版  2009 

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    シリコン系ナノ構造集積と機能メモリデバイス開発

  6. プラズマ・核融合学会誌 熱プラズマによるアモルファスシリコンの結晶化,「講座 熱流を伴う反応性プラズマを用いた材料合成プロセス 3.結晶化・相変化制御への応用」

    東 清一郎, 宮崎 誠一( Role: Joint author)

    2009 

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  7. 次世代半導体メモリの最新技術 第6章分担執筆:「シリコン系ナノ構造集積と機能メモリデバイス開発」

    ( Role: Sole author)

    シーエムシー出版  2009 

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    Language:Japanese

  8. プラズマ・核融合学会誌85(3) 熱プラズマによるアモルファスシリコンの結晶化,「講座 熱流を伴う反応性プラズマを用いた材料合成プロセス 3.結晶化・相変化制御への応用」

    東 清一郎, 宮崎 誠一( Role: Joint author)

    プラズマ・核融合学会  2009 

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  9. 実用薄膜プロセス―機能創製・応用展開― 第1編「創製技術」第5章「CVD」

    ( Role: Sole author)

    技術教育出版社  2009 

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    Language:Japanese

  10. 究極のかたちをつくる 第1章分担執筆:「ナノサイズのかたちをつくる」

    ( Role: Sole author)

    日刊工業新聞社  2009 

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    Language:Japanese

  11. 薄膜ハンドブック 第II編 第1章 1.3.4 CVD(編集・分担執筆 )

    宮崎 誠一( Role: Sole author)

    Ohmsha  2008 

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    Language:Japanese

  12. 表面科学の基礎と応用(第3編、第1章・第2節)

    ( Role: Joint author)

    エヌ・ティー・エス  2004 

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    Siの熱酸化機構、Si表面の熱酸化、Si酸化膜の構造、極薄Si酸化膜およびSi/SiO2界面の分析

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Presentations 724

  1. 熱処理による金属/Ge構造上の極薄Ge結晶形成

    大田 晃生、松下 圭吾、田岡 紀之、牧原 克典、宮﨑 誠一

    電子情報通信学会 シリコン材料・デバイス研究会(SDM)「MOSデバイス・メモリ高性能化-材料・プロセス技術」(応用物理学会 シリコンテクノロジー分科会との合同開催)  2021.6.22 

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    Event date: 2021.6.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  2. Photoemission-based Characterization of Interface Dipoles and Defect States for Gate Dielectrics Invited International conference

    S. Miyazaki

    Thermec’2021  2021.6 

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    Event date: 2021.6.1 - 2021.6.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:All-VIRTUAL conference   Country:Austria  

  3. HCl前洗浄がAl2O3/GaN界面特性に与える影響

    長井 大誠、田岡 紀之、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第68回応用物理学会春季学術講演会  2021.3.16 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  4. XANAMにより測定したGe量子ドット像のX線エネルギー依存性

    鈴木 秀士、向井 慎吾、田 旺帝、野村 昌治、藤森 俊太郎、池田 弥央、牧原 克典、宮﨑 誠一、朝倉 清高

    第68回応用物理学会春季学術講演会  2021.3.17 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン開催   Country:Japan  

  5. XANAMによるSi-Ge量子ドットにおけるX線誘起力変化の調査

    鈴木 秀士、向井 慎吾、田 旺帝、野村 昌治、藤森 俊太郎、池田 弥央、牧原 克典、宮﨑 誠一、朝倉 清高

    第68回応用物理学会春季学術講演会  2021.3.16 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  6. リモート水素プラズマ支援FePt合金ナノドット自己組織化形成プロセスにおける基板温度が磁化特性に与える影響

    本田 俊輔、古幡 裕志、大田 晃生、池田 弥央、大島 大輝、加藤 剛志、牧原 克典、宮﨑 誠一

    第68回応用物理学会春季学術講演会  2021.3.19 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  7. 低温水素アニール処理がGeコアSi量子ドットのPL特性に及ぼす影響

    前原 拓哉、池田 弥央、大田 晃生、牧原 克典、宮﨑 誠一

    第68回応用物理学会春季学術講演会  2021.3.17 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  8. Segregation Control for Ultrathin Ge Layer in Al/Ge(111) system International conference

    A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021)  2021.3.10 

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    Event date: 2021.3.7 - 2021.3.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  9. Influence of Substrate Temperature on Plasma-Enhanced Self-Assembling Formation of High Density FePt-Nanodot International conference

    S. Honda, K. Makihara, H. Furuhata, A. Ohta, M. Ikeda, T. Kato, D. Oshima, and S. Miyazaki

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021)  2021.3.9 

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    Event date: 2021.3.7 - 2021.3.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  10. High-Density Formation of FeSi2 Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    H. Zhixue, H, Zhang, A. Ohta, M. Ikeda, N. Taoka, K. Makihara, and S. Miyazaki

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021)  2021.3.9 

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    Event date: 2021.3.7 - 2021.3.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  11. Magnetoelectronic Transport Characteristics of Fe3Si Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    W. Jialin, H. Zhang, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021)  2021.3.9 

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    Event date: 2021.3.7 - 2021.3.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  12. Characterization of Electron Field Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures International conference

    T. Takemoto, T. Niibayashi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021)  2021.3.9 

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    Event date: 2021.3.7 - 2021.3.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  13. [チュートリアル]組成・状態評価 Invited

    宮﨑 誠一

    日本学術振興会 R025先進薄膜界面機能創成委員会 リトリート学習会2021  2021.3.6 

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    Event date: 2021.3.5 - 2021.3.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  14. Impacts of Thermal Oxidation Process of Hf/Zr Stacks on Crystalline Phases and Ferroelectric Property

    R. Hasegawa, N. Taoka, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

    2021.1.22 

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    Event date: 2021.1.22 - 2021.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  15. Solid Phase Crystallization of Amorphous Ge Thin Films on Sapphire(0001)

    H. Sugawa, A. Ohta, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

    2021.1.22 

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    Event date: 2021.1.22 - 2021.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  16. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure

    A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki

    2021.1.22 

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    Event date: 2021.1.22 - 2021.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  17. グラフェン電極を用いたSi量子ドット多重集積構造からの電子放出特性評価

    新林 智文、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第20回日本表面真空学会中部支部学術講演会  2020.12.19  日本表面真空学会中部支部

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    Event date: 2020.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  18. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode International conference

    Tomofumi Niibayashi, Tatsuya Takemoto, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki

    PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)) 

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    Event date: 2020.10.4 - 2020.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:All-VIRTUAL conference   Country:United States  

  19. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing International conference

    Hibiki Sugawa, Akio Ohta, Masato Kobayashi, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki

    PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)) 

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    Event date: 2020.10.4 - 2020.10.9

    Language:English   Presentation type:Poster presentation  

    Venue:All-VIRTUAL conference   Country:United States  

  20. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe International conference

    Jialin Wu, Hai Zhang, Hiroshi Furuhata, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta and Seiichi Miyazaki

    PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)) 

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    Event date: 2020.10.4 - 2020.10.9

    Language:English   Presentation type:Poster presentation  

    Venue:All-VIRTUAL conference   Country:United States  

  21. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure International conference

    Akio Ohta, Kenzou Yamada, Hibiki Sugawa, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, an Seiichi Miyazaki

    2020 International Conference on Solid State Devices and Materials (SSDM 2020)  2020.9.28 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Oral presentation (general)  

    Venue:All-VIRTUAL conference   Country:Japan  

  22. 金属Zr/Hf構造の熱酸化によるZrHf酸化物の形成と結晶相制御

    2020.9.10 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  23. グラフェン上部電極を用いたSi量子ドット多重集積構造からの電界電子放出 ―コレクタ電極電圧依存性評価

    2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  24. XANAMによるGe量子ドット像の1次元 元素マッピング

    2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  25. Si-Ge系ナノドットの高密度集積と光・電子物性制御 Invited

    牧原 克典、宮﨑 誠一

    阪大CSRN 第二回異分野研究交流会 ~半導体ナノカーボン系~  2020.8.28 

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    Event date: 2020.8.28

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  26. Photoemission Study of Chemically-Cleaned GaN Surfaces and GaN-SiO2 Interfaces Formed by Remote Plasma CVD Invited International conference

    S. Miyazaki, and A. Ohta

    Material Research Meeting 2019 (MRM 2020) 

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    Event date: 2019.12.10 - 2019.12.14

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Yokohama   Country:Japan  

  27. Light Emission from Multiple Stack Si/Ge Quantum Dots Invited International conference

    S. Miyazaki

    7th Global Nanotechnology Congress and Expo: Nanotechnology 2019 

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    Event date: 2019.12.2 - 2019.12.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kuala Lumpur   Country:Malaysia  

  28. Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties Invited International conference

    J. Wu, H. Furuhata, H. Zhang, Y. Hashimoto, M. Ikeda, A. Ohta, A. Kohno, K. Makihara, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  29. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices Invited International conference

    K. Makihara, M. Ikeda, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai   Country:Japan  

  30. Application of Surface Chemical Imaging by XANAM to Ge Surfaces Invited International conference

    S. Suzuki, S. Mukai, W. J. Chun, M. Nomura, S. Fujimori, M. Ikeda, K. Makihara, S. Miyazaki, and K. Asakura

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  31. Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core Invited International conference

    T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  32. High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots Invited International conference

    H. Zhang, X. Liu, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  33. Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure Invited International conference

    S. Miyazaki

    41st International Symposium on Dry Process (DPS 2019) 

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    Event date: 2019.11.21 - 2019.11.22

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima   Country:Japan  

  34. Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light Emission Invited International conference

    S. Miyazaki

    2nd Int. Conf. on Photonics Research: InterPhotonics 2019 

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    Event date: 2019.11.4 - 2019.11.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Antalya   Country:Turkey  

  35. Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy Invited International conference

    M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019) 

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    Event date: 2019.11.1 - 2019.11.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  36. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties Invited International conference

    S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019) 

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    Event date: 2019.11.1 - 2019.11.3

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  37. Determination of Complex Dielectric Function of Oxide Film from Photoemission Measurements Invited International conference

    A. Ohata, M. Ikeda, K. Makihara, and S. Miyazaki

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019) 

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    Event date: 2019.11.1 - 2019.11.3

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  38. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties Invited International conference

    K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki

    32nd International Microprocesses and Nanotechnology Conference (MNC 2019) 

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    Event date: 2019.10.28 - 2019.10.31

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima   Country:Japan  

  39. Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing Invited International conference

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

    32nd International Microprocesses and Nanotechnology Conference (MNC 2019) 

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    Event date: 2019.10.28 - 2019.10.31

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima   Country:Japan  

  40. Study on Light Emission from Multiple Stack Si/Ge Quantum Dots Invited International conference

    S. Miyazaki

    World Congress on Lasers, Optics and Photonics 

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    Event date: 2019.9.23 - 2019.9.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Barcelona   Country:Spain  

  41. Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure Invited International conference

    A. Ohta, D. Kikuta, T. Narita, K. Itoh, K. Makihara, T. Kachi, and S. Miyazaki

    2019 International Conference of Solid State of Device and Materials (SSDM 2019) 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  42. Characterization of Electron Field Emission from Si Quantum Dots with Ge Core/Si Quantum Dots Hybrid Stacked Structures Invited International conference

    T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    2019 International Conference of Solid State of Device and Materials (SSDM 2019) 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya University   Country:Japan  

  43. Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements Invited International conference

    K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, and S.Miyazaki

    2019 International Conference of Solid State of Device and Materials (SSDM 2019) 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  44. Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface Invited International conference

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

    2019 International Conference of Solid State of Device and Materials (SSDM 2019) 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  45. Formation of high density Fe-silicide nanodots induced by remote H2 plasma and their magnetic properties Invited International conference

    Y. Hashimoto, K. Makihara, M. Ikeda, A. Ohta, A. Kohno, and S. Miyazaki

    The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019) 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Seagaia Convention Center, Miyazaki   Country:Japan  

  46. [チュートリアル] 薄膜評価法-組成・状態評価 Invited

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    Event date: 2019.7.5 - 2019.7.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  47. Characterization of Electron Field Emission of Multiply-Stacked Si-QDs/SiO2 Structures Invited International conference

    T. Takemoto, Y. Futamura, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019) 

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    Event date: 2019.7.1 - 2019.7.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  48. Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core Invited International conference

    S. Fujimori, R. Nagai, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki

    2nd Joint ISTDM / ICSI 2019 Conference; 10th International SiGe Technology and Device Meeting (ISTDM)/ 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI) 

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    Event date: 2019.6.2 - 2019.6.6

    Language:English   Presentation type:Poster presentation  

    Venue:University of Wisconsin-Madison   Country:United States  

  49. Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light and Electron Emissions International conference

    S. Miyazaki

    World Chemistry Forum 2019 (WCF-2019) 

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    Event date: 2019.5.22 - 2019.5.24

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Catalonia Barcelona Plaza, Barcelona   Country:Spain  

  50. Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices Invited International conference

    K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW2019) 

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    Event date: 2019.5.19 - 2019.5.23

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nara   Country:Japan  

  51. Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics Invited International conference

    S. Miyazaki and A. Ohta

    2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 7) 

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    Event date: 2019.5.19 - 2019.5.23

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto   Country:Japan  

  52. 電子デバイス・材料開発に向けたナノスケールスタック構造・界面の光電子分光分析 Invited

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    Event date: 2019.1.24 - 2019.1.26

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  53. Photoemission Study of Gate Dielectrics and Stack Interfaces Invited International conference

    S. Miyazaki, and A. Ohta

    2018 International Conference of Solid State of Device and Materials (SSDM 2018) 

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    Event date: 2018.9.9 - 2018.9.13

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo   Country:Japan  

  54. Formation and Characterization of Si/Ge Quantum Dots for Optoelectronic Application Invited International conference

    S. Miyazaki, K. Makihara, M. Ikeda, and A. Ohta

    International Conference on Processing & Manufacturing of Advanced Materials (Thermec' 2018) 

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    Event date: 2018.7.8 - 2018.7.13

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Paris   Country:France  

  55. Si-Geスーパーアトム構造の高密度集積と光・電子物性制御 Invited

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    Event date: 2018.6.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  56. Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy International conference

    T. Mochizuki, K. Gotoh, A. Ohta, Y. Kurokawa, S. Miyazaki, T. Yamamoto, N. Usami

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC-7) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) 

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    Event date: 2018.6.10 - 2018.6.15

    Language:English   Presentation type:Oral presentation (general)  

    Venue:WAIKOLOA, HAWAII   Country:United States  

  57. Si-Ge系コア・シェル量子構造の高密度集積と光・電子物性制御 Invited

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    Event date: 2018.3.17 - 2018.3.20

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  58. Oxidation of GaN surface by remote oxygen plasma International conference

    T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

    The 39th International Symposium on Dry Process (DPS2017)  

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    Event date: 2017.11.16 - 2017.11.17

    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo Tech Front (Kuramae Kaikan)   Country:Japan  

  59. Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    The 30th International Microprocesses and Nanotechnology Conference(MNC2017) 

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    Event date: 2017.11.6 - 2017.11.9

    Language:English   Presentation type:Poster presentation  

    Venue:The Ramada Plaza Jeju Hotel (Jeju, Korea)   Country:Korea, Republic of  

  60. Evaluation of Resistive Switching Properties of Si-Rich Oxide Embedded with Ti Nanodots by Applying Constant Voltage and Constant Current International conference

    A. Ohta, Y. Kato, M. Ikeda, K. Makihara, and S. Miyazaki

    The 30th International Microprocesses and Nanotechnology Conference(MNC2017) 

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    Event date: 2017.11.6 - 2017.11.9

    Language:English   Presentation type:Poster presentation  

    Venue:The Ramada Plaza Jeju Hotel (Jeju, Korea)   Country:Korea, Republic of  

  61. GaN-MOSデバイス開発に向けたゲート絶縁膜及び界面の光電子分光分析

    宮﨑 誠一

    応用物理学会 先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

  62. 硬 X 線光電子分光法による Si 量子ドット多重集積構造のオペランド分析

    中島 裕太、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  63. Ge コア Si 量子ドットの EL 特性評価

    山田 健太郎、池田 弥央、牧原 克典、大田 晃生、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  64. 熱処理によるエピタキシャル Ag 上への Ge 二次元結晶の合成指針の構築

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  65. 熱処理がリモートプラズマ CVD SiO2/GaN 構造の化学結合状態及び電気特性に与える影響

    グェンスァン チュン、田岡 紀之、大田 晃生、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  66. リモートプラズマ酸化した GaN の表面構造と電子状態

    山本 泰史、田岡 紀之、大田 晃生、グェンスァン チュン、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  67. 入射エネルギー可変の真空紫外光電子分光による固体表面の価電子帯上端位置の計測

    今川 拓哉、大田 晃生、田岡 紀之、藤村 信幸、グェンスァン チュン、池田 弥央、牧原 克典、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  68. 高誘電率絶縁膜/SiO2積層構造の光電子分光分析 -界面ダイポールと酸素密度の相関-

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10.28 - 2017.10.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学IB電子情報館   Country:Japan  

  69. Ultrathin Ge Growth on Ag Surface by Annealing of Hetero-Epitaxial Ag/Ge(111) International conference

    A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    The 8th International Symposium on Surface Science (ISSS-8) 

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    Event date: 2017.10.22 - 2017.10.26

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba International Congress Center   Country:Japan  

  70. Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices Invited International conference

    S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda

    The 232nd Meeting of The Electrochemical Society (ECS Meeting) 

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    Event date: 2017.10.1 - 2017.10.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:National Harbor MD   Country:United States  

  71. Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis Invited International conference

    S. Miyazaki, A. Ohta, and N. Fujimura

    The 232nd Meeting of The Electrochemical Society (ECS Meeting) 

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    Event date: 2017.10.1 - 2017.10.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:National Harbor MD   Country:United States  

  72. Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    SSDM2017 

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    Event date: 2017.9.19 - 2017.9.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  73. High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface State Density International conference

    T. X. Nguyen, N. Taoka, A. Ohta , K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

    SSDM2017 

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    Event date: 2017.9.19 - 2017.9.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  74. Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag (111) International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    SSDM2017 

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    Event date: 2017.9.19 - 2017.9.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  75. Challenges in Si-Based Nanotechnology:Fabrication and Characterization of Multistack Si/Ge Quantum Dots for Novel Functional Devices Invited International conference

    S. Miyazaki

    The 5th International Conference on Advanced Materials Science and Technology 2017 (ICAMST 2017) 

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    Event date: 2017.9.19 - 2017.9.20

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Makassar   Country:Indonesia  

  76. Thermal Stability of SiO2/GaN Interface Formed by Remote Plasma CVD

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  77. 熱処理によるAg/Ge構造の表面平坦化とGe析出量制御

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮﨑 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場・国際センター・福岡サンパレス   Country:Japan  

  78. Study of Wet Chemical Treatments of Epitaxial GaN(0001) Surface

    L. Peng, A. Ohta, N. X. Truyen, M. Ikeda, K. Makihara, N. Taoka, T.Narita, K. Itoh, D. Kikuta, K. Shiozaki, T.Kachi, S. Miyazaki

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    Event date: 2017.9.5 - 2017.9.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  79. 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造の発光特性

    牧原 克典、池田 弥央、藤村 信幸、大田 晃生、宮﨑 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場・国際センター・福岡サンパレス   Country:Japan  

  80. 真空紫外光電子分光によるGaNの電子親和力評価

    今川 拓哉、大田 晃生、藤村 信幸、グェン スァン チュン、池田 弥央、牧原 克典、加地 徹、塩崎 宏司、宮﨑 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場・国際センター・福岡サンパレス   Country:Japan  

  81. XPSによるHigh-k/SiO2界面のダイポール定量と酸素密度比との相関

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場・国際センター・福岡サンパレス   Country:Japan  

  82. リモート酸素プラズマで形成したGa酸化物/GaN構造のエネルギーバンド構造と電気的特性

    山本 泰史、田岡 紀之、大田 晃生、グェン スァチュン、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場・国際センター・福岡サンパレス   Country:Japan  

  83. グリーンナノエレクトロニクスのための材料・プロセスインテグレーション - 超低消費電力次世代トランジスタ開発 -

    宮﨑 誠一

    SPring-8シンポジウム2017 

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    Event date: 2017.9.4 - 2017.9.5

    Language:Japanese   Presentation type:Poster presentation  

    Venue:広島大学 東千田未来創生センター   Country:Japan  

  84. 高誘電率絶縁膜の電子親和力の決定および SiO2 との界面で生じる電位変化の定量

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    2017年真空・表面科学合同講演会 

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    Event date: 2017.8.17 - 2017.8.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市立大学金沢八景キャンパス   Country:Japan  

  85. リモート酸素プラズマ支援 CVD による急峻 SiO2/GaN 界面の形成とその電気的特性

    N. X. Truyen、田岡 紀之、大田 晃生、 山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    2017年真空・表面科学合同講演会 

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    Event date: 2017.8.17 - 2017.8.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市立大学金沢八景キャンパス   Country:Japan  

  86. [チュートリアル] 組成・状態分析 Invited

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    Event date: 2017.7.28 - 2017.7.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  87. Fabrication of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devices Invited International conference

    S. Miyazaki, K. Yamada, Y. Nakashima, K. Makihara, A. Ohta, and M. Ikeda

    The 1st International Semiconductor Conference for Global Challenges (ISCGC-2017) 

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    Event date: 2017.7.16 - 2017.7.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nanjing   Country:China  

  88. Study of Light Emission from Si Quantum Dots with Ge Core Invited International conference

    S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara

    Frontiers in Materials Processing Applications, Research and Technology (FiMPART'17) 

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    Event date: 2017.7.9 - 2017.7.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Bordeaux   Country:France  

  89. Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD International conference

    N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

    AWAD2017(2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices) 

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    Event date: 2017.7.3 - 2017.7.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Hyundai (Gyeongju), Gyeongju-si, Korea   Country:Korea, Republic of  

  90. Magnetoelectronic Transport of Double Stack FePt Nanodots International conference

    K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

    AWAD2017(2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices) 

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    Event date: 2017.7.3 - 2017.7.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Hyundai (Gyeongju), Gyeongju-si, Korea   Country:Korea, Republic of  

  91. Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy International conference

    A. Ohta

    INFOS 2017(20th Conference on Insulating Films on Semiconductors) 

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    Event date: 2017.6.27 - 2017.6.30

    Language:English   Presentation type:Poster presentation  

    Venue:Seminaris SeeHotel Potsdam(Potsdam, Germany)   Country:Germany  

  92. Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis International conference

    A. Ohta

    INFOS 2017(20th Conference on Insulating Films on Semiconductors) 

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    Event date: 2017.6.27 - 2017.6.30

    Language:English   Presentation type:Poster presentation  

    Venue:Seminaris SeeHotel Potsdam(Potsdam, Germany)   Country:Germany  

  93. 定電圧および定電流印加によるSi酸化薄膜の電気抵抗変化特性評価

    大田 晃生、加藤 祐介、池田 弥央、牧原 克典、宮﨑 誠一

    シリコン材料・デバイス(SDM)研究会 

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    Event date: 2017.6.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパス・イノベーションセンター東京   Country:Japan  

  94. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮﨑 誠一

    シリコン材料・デバイス(SDM)研究会 

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    Event date: 2017.6.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパス・イノベーションセンター東京   Country:Japan  

  95. XPSによるHigh-k/SiO2界面の化学構造およびダイポールの評価

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    シリコン材料・デバイス(SDM)研究会 

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    Event date: 2017.6.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパス・イノベーションセンター東京   Country:Japan  

  96. Photoemission study of gate dielectrics on gallium nitride Invited International conference

    S. Miyazaki, N. X. Truyen, and A. Ohta

    ULSIC vs TFT: 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 

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    Event date: 2017.5.21 - 2017.5.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Schloss Hernstein Seminar Hotel, Schloss Hernstein, Hernstein   Country:Austria  

  97. Characterization of Electroluminescence from Si-QDs with Ge Core International conference

    K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures) 

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    Event date: 2017.5.14 - 2017.5.19

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Warwick(Coventry, UK)   Country:United Kingdom  

  98. Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2 International conference

    K. Makihara, H. Zhang, A. Ohta, M. Ikeda, and S. Miyazaki

    ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures) 

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    Event date: 2017.5.14 - 2017.5.19

    Language:English   Presentation type:Poster presentation  

    Venue:The University of Warwick(Coventry, UK)   Country:United Kingdom  

  99. Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy International conference

    Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures) 

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    Event date: 2017.5.14 - 2017.5.19

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Warwick(Coventry, UK)   Country:United Kingdom  

  100. High Density Formation of and Light Emission from Si Quantum Dots with Ge Core International conference

    S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara

    2017MRS SPRING MEETING 

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    Event date: 2017.4.17 - 2017.4.21

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PHOENIX CONVENTION CENTER   Country:United States  

  101. Si 細線構造への高密度 Si 量子ドット形成と発光特性

    高 磊、池田 弥央、山田 健太郎、牧原 克典、大田 晃生、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  102. ドライおよびN2O酸化により形成したSiO2/4H-SiCの電 子占有欠陥評価

    渡辺 浩成、大田 晃生、池田 弥央、牧原 克典、森 大輔、寺尾 豊、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  103. Ge上にエピタキシャル成長したAg(111)表面の平坦化お よび化学構造評価

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  104. リモートプラズマ支援 CVD SiO2/GaN の界面特性

    グェン スァン チュン、田岡 紀之、大田 晃生、山本 泰史、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  105. リモート酸素プラズマによるGaN表面酸化

    山本 泰史、田岡 紀之、大田 晃生、グェンスァ ン チュン、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  106. 硬X線光電子分光法によるSi-MOSダイオードのオペラ ンド分析 -電位変化および化学結合状態評価-

    大田 晃生、村上 秀樹、池田 弥央、牧原 克典、池永 英司、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  107. Ge コアSi 量子ドットの発光特性評価

    山田 健太郎、牧原 克典、池田 弥央、大田 晃生、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  108. 硬X線光電子分光を用いたSi量子ドット多重集積構造の 電位分布評価

    中島 裕太、竹内 大智、 牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  109. XPSによるHfO2の電子親和力と界面ダイポールの定量

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  110. Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111) Invited International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    ISPlasma2017/IC-PLANTS2017 

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    Event date: 2017.3.1 - 2017.3.5

    Language:English   Presentation type:Poster presentation  

    Venue:Kasugai   Country:Japan  

  111. Total Photoelectron Yield Spectroscopy of Electronic States of GaN Surface International conference

    A. Ohta

    ISPlasma2017/IC-PLANTS2017 

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    Event date: 2017.3.1 - 2017.3.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  112. Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements International conference

    T. Yamamoto, A. Ohta, M.Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  113. Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  114. Luminescence Studies of High Density Si Quantum Dots with Ge core International conference

    K. Yamada, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  115. Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots International conference

    Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  116. Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  117. Characterization of Remote Plasma CVD SiO2 on GaN(0001) International conference

    N. X. Truyen, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  118. Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates International conference

    M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  119. Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors International conference

    A. Ohta, T. Yamamoto, N. X. Truyen, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar 

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    Event date: 2017.2.13 - 2017.2.14

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  120. Photoemission Study of Chemical Bonding Features and Electronic Defect States of Remote Plasma CVD SiO2/GaN Structure

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    Event date: 2017.1.20 - 2017.1.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  121. Evaluation of Inner Potential Change and Electrical Dipole in Ultrathin Oxide Stacked Structure Using XPS Measurements

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    Event date: 2017.1.20 - 2017.1.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  122. 熱酸化SiO₂/4H-SiCSi面およびC面の電子専有欠陥および化学構造評価

    渡辺 浩成、大田 晃生、池田 弥央、牧原 克典、森 大輔、寺尾 豊、宮﨑 誠一

    第16回 日本表面科学会中部支部学術講演会 

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    Event date: 2016.12.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  123. HfO₂/SiO₂/Si構造の光電子分光分析ー界面ダイポールの定量ー

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第16回 日本表面科学会中部支部学術講演会 

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    Event date: 2016.12.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  124. Characterization of Magnetoelectronic Transport through Double Stack FePt Nanodots on Ultrathin SiO2/c-Si by Conductive-probe AFM International conference

    S. Miyazaki

    ICSPM24 

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    Event date: 2016.12.14 - 2016.12.16

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  125. Processing and Characterization of Si/Ge Quantum Dots Invited International conference

    S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda

    2016 IEDM(IEEE International Electron Devices Meeting) 

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    Event date: 2016.12.3 - 2016.12.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hilton San Francisco Union Square(San Francisco, CA)   Country:United States  

  126. シリコン酸化薄膜の電気抵抗スイッチングおよび欠陥準位密度評価 International conference

    加藤 祐介、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    2016 真空・表面科学合同講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場 (名古屋市熱田区)   Country:Japan  

  127. Si細線構造への高密度Si量子ドット形成 International conference

    高 磊、竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    2016 真空・表面科学合同講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場 (名古屋市熱田区)   Country:Japan  

  128. Si系量子ドット多重集積構造からの電界電子放出特性 International conference

    中島 裕太、竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    2016 真空・表面科学合同講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場 (名古屋市熱田区)   Country:Japan  

  129. HAXPESによるSi-MOSキャパシタの化学結合状態および内部電位の深さ方向分析 International conference

    大田 晃生、村上 秀樹、池田 弥央、牧原 克典、池永 英司、宮﨑 誠一

    2016 真空・表面科学合同講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場 (名古屋市熱田区)   Country:Japan  

  130. IV族半導体上に蒸着したAg薄膜の化学構造評価と反応制御 International conference

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮﨑 誠一

    2016 真空・表面科学合同講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場 (名古屋市熱田区)   Country:Japan  

  131. Magnetoelectronic Transport and Resistive Switching in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si Invited International conference

    S. Miyazaki

    JSPS Core-to-Core Program Workshop 

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    Event date: 2016.11.24 - 2016.11.26

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Julich   Country:Germany  

  132. High Density Formation of Ta/TaOxide Core-Shell Nanodots International conference

    Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    29th International Microprocesses and Nanotechnology Conference (MNC 2016) 

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    Event date: 2016.11.8 - 2016.11.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ANA Crowne Plaza, Kyoto, Japan   Country:Japan  

  133. Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation International conference

    K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S.Miyazaki

    29th International Microprocesses and Nanotechnology Conference (MNC 2016) 

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    Event date: 2016.11.8 - 2016.11.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ANA Crowne Plaza, Kyoto, Japan   Country:Japan  

  134. Evaluation of Potential Change and Electrical Dipole in HfO2/ SiO2/Si Structure International conference

    N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki

    SSDM 2016 

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    Event date: 2016.9.26 - 2016.9.29

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba   Country:Japan  

  135. Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices Invited International conference

    S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara

    SSDM 2016 

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    Event date: 2016.9.26 - 2016.9.29

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tsukuba   Country:Japan  

  136. Magnetotransport Properties of FePt Alloy-NDs Stacked Structures Invited International conference

    K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

    SSDM 2016 

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    Event date: 2016.9.26 - 2016.9.29

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba   Country:Japan  

  137. FePtナノドットスタック構造における磁場印加後の電気伝導特性評価

    河瀬 平雅、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  138. Ta酸化物ナノドットの高密度・一括形成(II)

    王 亜萍、竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  139. GeコアSi量子ドットのエレクトロルミネッセンス特性

    山田 健太郎、池田 弥央、牧原 克典、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  140. HfO2/SiO2/Si(100)構造における内部電位分布、界面ダイポールの定量評価

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  141. X線光電子分光法による熱酸化SiO2およびGeO2薄膜の誘電関数評価

    山本 泰史、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  142. リモートプラズマCVDSiO2/GaN界面の光電子分光分析

    グェン スァン チュン、大田 晃生、牧原 克典、池田 弥央、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  143. GeコアSi量子ドット/Si量子ドット多重集積構造のEL特性

    竹内 大智、山田 健太郎、牧原 克典、池田 弥央、大田 晃生、 宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  144. 4H-SiCSi面およびC面上に成長した熱酸化膜の光電子収率分光法による電子占有欠陥評価

    渡辺 浩成、大田 晃生、 池田 弥央、牧原 克典、宮﨑 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  145. Formation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their Magnetic-Field Dependent Electron Transport Properties International conference

    H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

    APAC Silicide 2016  

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    Event date: 2016.7.16 - 2016.7.18

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  146. Embedding of Ti nanodots into SiOx and its impact on resistance switching behaviors International conference

    Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    AWAD2016(2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices) 

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    Event date: 2016.7.4 - 2016.7.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  147. Formation and electron transport properties of Fe3Si nanodots on ultrathin SiO2 International conference

    H. Zhang, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki

    AWAD2016(2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices) 

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    Event date: 2016.7.4 - 2016.7.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  148. XPSによるSiO2/半導体界面の電位変化およびダイポールの定量

    藤村 信幸、大田 晃生、渡辺 浩成、牧原 克典、宮﨑 誠一

    SDM研究会/シリコンテクノロジー分科会 

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    Event date: 2016.6.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパス・イノベーションセンター東京   Country:Japan  

  149. リモート酸素プラズマ支援CVDによる低温SiO2薄膜形成

    グェンスァン チュン、藤村 信幸、竹内 大智、大田 晃生、牧原 克典、池田 弥央、宮﨑 誠一

    SDM研究会/シリコンテクノロジー分科会 

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    Event date: 2016.6.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパス・イノベーションセンター東京   Country:Japan  

  150. High Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core Invited International conference

    S. Miyazaki

    11th Workshop on Si-based Optoelectronic Materials and Devices 

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    Event date: 2016.6.16 - 2016.6.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  151. Electron Transport Properties of High Density FePt-NDs Stacked Structures International conference

    T. Kawase, Y. Mitsuyuki, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ISCSI-VII/ISTDM 2016 

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    Event date: 2016.6.7 - 2016.6.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  152. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ISCSI-VII/ISTDM 2016 

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    Event date: 2016.6.7 - 2016.6.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  153. Determination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPS International conference

    H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

    ISCSI-VII/ISTDM 2016 

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    Event date: 2016.6.7 - 2016.6.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  154. [チュートリアル]組成・状態分析

    宮﨑 誠一

    薄膜工学セミナー2016~薄膜の基礎から応用まで~ 

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    Event date: 2016.6.3 - 2016.6.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:キャンパスイノベーションセンター東京   Country:Japan  

  155. Characterization of light emission from Si quantum dots with Ge core Invited International conference

    S. Miyazaki

    Intern. Conf. on Processing and Manufacturing of Advanced Materials 2016 (THERMEC'2016) 

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    Event date: 2016.5.29 - 2016.6.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Granz   Country:Austria  

  156. Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Based Thin Films and Ti Nano-dots

    Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  157. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe

    H. Zhang, Y. Mitsuyuki, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  158. Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC (II)

    H. Watanabe, A. Ohta, N. Fujimura, K. Makihara and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  159. Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core

    K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  160. Photoluminescence Mechanism of Si Quantum Dots with Ge Core

    K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  161. Magnetotransport Properties of FePt Alloy-NDs Stacked Structures

    Y. Mitsuyuki, T. Kawase, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  162. Cleaning of 4H-SiC(0001) Surface by using Remote Hydrogen Plasma International conference

    T. xuan Nguyen, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  163. Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method International conference

    A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  164. Self-assembling Formation of Ta Nanodots Induced by Remote Hydrogen Plasma from Ge/Ta Bi-layer Stack International conference

    Y. Wang, D. Takeuchi, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  165. Impact of Magnetic-Field Application on Electron Charging Characteristics of FePt Nanodots International conference

    T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Katou, S. Iwata, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  166. Formation of High Density Ta Oxide Nanodots International conference

    Y. Wang, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  167. Effect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure International conference

    Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki

    ISPlasma2016 & IC-PLANTS2016 

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    Event date: 2016.3.6 - 2016.3.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  168. High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core Invited International conference

    S. Miyazaki

    BIT's 2nd Annual World Congress of Smart Materials-2016 

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    Event date: 2016.3.4 - 2016.3.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Singapore  

  169. Evaluation of Energy Band Diagram and Depth Profile of Electronic Defect State Density for SiO2/4H-SiC Structures

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    Event date: 2016.1.21 - 2016.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  170. 4H-SiC(0001) Surface Modification by Remote Hydrogen Plasma Exposur

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    Event date: 2016.1.21 - 2016.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  171. Evaluation of Valence Band Top and Electron Affinity of Si, 4H-SiC, and SiO2 Using X-ray Photoelectron Spectroscopy

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    Event date: 2016.1.21 - 2016.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  172. Effect of Embedding Ti Nanodots into SiOx Film on Its Resistive Switching Properties

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    Event date: 2016.1.21 - 2016.1.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  173. Fabrication and Magnetoelectronic Transport of Double Stack FePt Nanodots on Ultrathin SiO2 International conference

    S. Miyazaki, Y. Kabeya, Y. Mitsuyuki, and K. Makihara

    2015 MRS Fall Meeting & Exhibit 

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    Event date: 2015.11.29 - 2015.12.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  174. Impact of Embedded MnNanodots on Resistive Switching Properties of Si-rich Oxides International conference

    T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

    28th International Microprocesses and Nanotechnology Conference(MNC2015) 

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    Event date: 2015.11.10 - 2015.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  175. Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots International conference

    Y. Kato, A. Ohta, T. Arai, K. Makihara, and S. Miyazaki

    The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF) 

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    Event date: 2015.11.2 - 2015.11.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  176. Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS International conference

    N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki

    The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF) 

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    Event date: 2015.11.2 - 2015.11.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  177. Photoemission Study of Thermally-Grown SiO2/4H-SiC Structure. International conference

    H. Watanabe, A. Ohta, N. Fujimura, K. Makihara, and S. Miyazaki

    The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF) 

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    Event date: 2015.11.2 - 2015.11.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  178. High Density Formation of Ta Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Wang, D. Takeuchi, K. Makihara, A. Ohta, and S. Miyazaki

    68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing 

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    Event date: 2015.10.12 - 2015.10.16

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  179. Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure International conference

    H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

    The 228th ECS Meeting  

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    Event date: 2015.10.11 - 2015.10.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  180. Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots International conference

    Y. Kato, T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

    The 228th ECS Meeting  

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    Event date: 2015.10.11 - 2015.10.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  181. High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100) International conference

    S. Miyazaki

    The 228th ECS Meeting  

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    Event date: 2015.10.11 - 2015.10.15

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  182. グリーンナノエレクトロニクスのための材料・プロセスインテグレーション ~超低消費電力次世代トランジスタ開発~ Invited

    宮﨑 誠一、大田 晃生、他

    SPring-8シンポジウム2015 放射光が先導するグリーンイノベーション ~グローバルな視点からの発信~ 

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    Event date: 2015.9.13 - 2015.9.14

    Language:Japanese   Presentation type:Poster presentation  

    Venue:九州大学 伊都キャンパス カーボンニュートラル・エネルギー国際研究所/I2CNER(アイスナー) 大ホール他   Country:Japan  

  183. [チュートリアル] CVD1(シリコン系) Invited

    宮﨑 誠一

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    Event date: 2015.7.1 - 2015.7.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:サンパーク犬山   Country:Japan  

  184. Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy International conference

    A. Ohta, K. Makihara, and S. Miyazaki

    The 19th Conference on "Insulating Films on Semiconductors"(INFOS 2015) 

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    Event date: 2015.6.29 - 2015.7.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  185. Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core International conference

    K. Kondo

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)  

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    Event date: 2015.6.29 - 2015.7.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  186. Electron Transport Properties of High Densuty FePt-NDs Stacked Structures International conference

    Y. Mitsuyuki, K. Makihara, A. Oota, and S. Miyazaki

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)  

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    Event date: 2015.6.29 - 2015.7.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  187. High Density Formation and Characterization of CoPt and FePt Nanodots on SiO2 International conference

    S. Miyazaki

    International Conference on Frontiers in Materials Processing Applications Research & Technology (FiMPART'15) 

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    Event date: 2015.6.12 - 2015.6.15

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:India  

  188. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5.18 - 2015.5.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  189. Study on Light Emission from Si Quantum Dots with Ge Core International conference

    S. Miyazaki, K. Kondo, and K. Makihara

    The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5.18 - 2015.5.22

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  190. Study on Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots International conference

    T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5.18 - 2015.5.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  191. Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasma International conference

    K. Makihara, H. Zhang, A. Ohta, and S. Miyazaki

    ISPlasma2015/IC-PLANTS2015 

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    Event date: 2015.3.26 - 2015.3.31

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  192. Characterization of Electron Field Emission from High Density Self-Aligned Si-Based Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    ISPlasma2015/IC-PLANTS2015 

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    Event date: 2015.3.26 - 2015.3.31

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  193. リモートH2プラズマ処理した4H-SiC表面の化学構造および電子状態分析

    グェンスァン チュン、大田 晃生、竹内 大智、張 海牧原 克典、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  194. 光電子収率分光法によるSiO2/SiC構造の電子状態計測(2)

    大田 晃生、渡邉 浩成、グェンスァン チュン、牧原 克典、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  195. リモート水素プラズマ支援によるFeシリサイドナノドットの高密度一括形成と磁化特性評価

    張 海、牧原 克典、大田 晃生、壁谷 悠希、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  196. 外部磁場がFePt合金ナノドットへの電子注入特性に及ぼす影響

    満行 優介、壁谷 悠希、張 海、大田 晃生、牧原 克典、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  197. 高密度FePtナノドットスタック構造の電子輸送特性

    壁谷 悠希、満行 優介、張 海、大田 晃生、牧原 克典、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  198. P添加がGeコアSi量子ドットのPL特性に及ぼす影響

    近藤 圭悟、牧原 克典、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  199. Si量子ドット多重集積構造の電界電子放出特性評価

    竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  200. 不純物添加がSi量子ドット多重集積構造のEL特性に及ぼす影響

    山田 敬久、牧原 克典、池田 弥央、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  201. リモート水素プラズマ支援によるTaナノドットの高密度一括形成

    王 亜萍、牧原 克典、大田 晃生、竹内 大智、宮﨑 誠一

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学(神奈川県平塚市)   Country:Japan  

  202. Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes

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    Event date: 2015.1.29 - 2015.1.31

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  203. Formation and Characterization of High Density FePt Nanodots on SiO2 Induced by Remote Hydrogen Plasma International conference

    S. Miyazaki, Y. Kabeya, R. Fukuoka, H. Zhang, K. Makihara, T. Kato, and S. Iwata

    2014 MRS Fall Meeting&Exhibit 

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    Event date: 2014.11.30 - 2014.12.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  204. Photoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignments International conference

    S. Miyazaki

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec) 

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    Event date: 2014.11.13 - 2014.11.14

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Belgium  

  205. Luminescence Studies of High Density Si-based Quantum Dots International conference

    K. Makihara

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec) 

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    Event date: 2014.11.13 - 2014.11.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  206. Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots International conference

    D. Takeuchi

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec) 

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    Event date: 2014.11.13 - 2014.11.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  207. High Density formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma International conference

    H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    MNC 2014  

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    Event date: 2014.11.4 - 2014.11.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  208. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack International conference

    A. Ohta, H. Murakami, K. Hashimoto, K. Makihara, and S. Miyazaki

    The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting  

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    Event date: 2014.10.5 - 2014.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  209. Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting  

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    Event date: 2014.10.5 - 2014.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  210. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100) International conference

    H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi, and S. Miyazaki

    The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting  

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    Event date: 2014.10.5 - 2014.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  211. Photoluminescence Study of Si Quantum Dots with Ge Core International conference

    K. Makihara, K. Kondo, M. Ikeda, A. Ohta, and S. Miyazaki

    The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting  

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    Event date: 2014.10.5 - 2014.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  212. Materials and Interfaces Characterization for Advanced Ge-Channel Devices: Soft and Hard X-ray Photoemission Measurements Invited International conference

    S. Miyazaki

    The 1st Material Research Society of Indonesia (MRS-Id) Meeting 2014  

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    Event date: 2014.9.26 - 2014.9.28

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Indonesia  

  213. Mnナノドット埋め込みSiリッチ酸化膜の抵抗変化特性

    荒井 崇、大田 晃生、牧原 克典、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  214. 光電子収率分光法によるSiO2/SiC界面の電子状態計測

    大田 晃生、竹内 大智、チュン グェンスァン、牧原 克典、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  215. 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田 敬久、牧原 克典、池田 弥央、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  216. P添加Si量子ドット多重集積構造の電界電子放出特性

    竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  217. FePtナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性

    壁谷 悠希、牧原 克典、大田 晃生、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  218. リモート水素プラズマ支援によるMn-Ge系ナノドットの高密度一括形成

    温 映輝、牧原 克典、大田 晃生、宮﨑 誠一

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  219. Electroluminescence from Multiply-Stack of Doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, M. Ikeda, and S. Miyazaki

    international conference on SOLID STATE DEVICES AND MATERIALS (SSDM2014) 

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    Event date: 2014.9.8 - 2014.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  220. Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots International conference

    Y. Kabeya

    The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)  

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  221. Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001) International conference

    T. Nguyen

    The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)  

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  222. High Density Formation of Mn and Mn-germanide Nanodots International conference

    Y. WEN

    The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)  

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  223. Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe International conference

    T. Arai

    The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)  

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  224. Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes International conference

    A. Ohta

    The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)  

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  225. Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements International conference

    A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki

    2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2014) 

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    Event date: 2014.7.1 - 2014.7.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  226. Impact of embedded Mn-nanodots on resistive switching in Si-rich oxides International conference

    T. Arai, C. Liu, A. Ohta, K. Makihara, and S. Miyazaki

    7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM) 

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    Event date: 2014.6.2 - 2014.6.4

    Language:English   Presentation type:Poster presentation  

    Country:Singapore  

  227. Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique International conference

    K. Makihara, N. Tsunekawa, M. Ikeda, and S. Miyazaki

    7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM) 

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    Event date: 2014.6.2 - 2014.6.4

    Language:English   Presentation type:Poster presentation  

    Country:Singapore  

  228. XPS Study of Energy Band Alignment of High-k Dielectric Gate Stack on Ge(100) International conference

    S. Miyazaki, and A. Ohta

    2014 MRS Spring Meetings & Exhibit 

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    Event date: 2014.4.21 - 2014.4.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  229. 磁性AFM探針を用いたCoPt合金ナノドットの電子輸送特性評価-外部磁場依存性

    壁谷 悠希、張 海、福岡 諒、牧原 克典、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  230. 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価(II)

    竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  231. P/N制御Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田 敬久、牧原 克典、鈴木 善久、池田 弥央、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  232. P添加GeコアSi量子ドットのフォトルミネッセンス特性評価

    近藤 圭悟、鈴木 善久、牧原 克典、池田 弥央、小山 剛史、岸田 英夫、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  233. リモート水素プラズマ支援によるMnおよびMnジャーマナイドナノドットの高密度一括形成

    温 映輝、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  234. リモート水素プラズマ支援によるFeシリサイドナノドットの高密度形成

    張 海、牧原 克典、大田 晃生、池田 弥央、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  235. AFM/KFMによる自己整合一次元連結Si量子ドットの局所帯電評価

    恒川 直輝、牧原 克典、池田 弥央、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  236. Mnナノドットを埋め込んだSiOxMIM構造の局所電気伝導解析

    荒井 崇、劉冲、大田 晃生、牧原 克典、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  237. FePt合金ナノドットの構造および磁化特性評価

    福岡 諒、張 海、牧原 克典、大田 晃生、徳岡 良浩、加藤 剛志、岩田 聡、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  238. Niナノドット電極を用いたSiOx薄膜の抵抗変化特性

    劉 冲、荒井 崇、大田 晃生、竹内 大智、張 海、牧原 克典、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  239. Mnナノドットを埋め込んだSiOx膜の抵抗変化特性

    荒井 崇、劉 冲、大田 晃生、牧原 克典、宮﨑 誠一

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3.17 - 2014.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス(神奈川県)   Country:Japan  

  240. Study on Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma Exposure International conference

    H. Zhang, K. Makihara, R. Fukuoka, Y. Kabeya, and S. Miyazaki

    ISPlasma2014/IC-PLANTS2014 

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    Event date: 2014.3.2 - 2014.3.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  241. Study on Si/Ge Heterodtructures Formed by PECVD in Combination with Ni-Nds Seeding Nucleation International conference

    Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, S. Higashi, and S. Miyazaki

    ISPlasma2014/IC-PLANTS2014 

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    Event date: 2014.3.2 - 2014.3.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  242. Selective Crystallization and Metallizatioin of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma International conference

    K. Makihara, M. Ikeda, S. Higashi, and S. Miyazaki

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014) 

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    Event date: 2014.3.2 - 2014.3.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  243. 金属合金化反応制御による強磁性ナノドットの高密度・自己組織化形成

    牧原 克典、宮﨑 誠一

    名古屋大学ナノテクノロジープラットフォーム第1回合同シンポジウム~中部ものづくりは名大から~ 

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    Event date: 2014.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  244. High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties International conference

    R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  245. Alignment Control and Electrical Coupling of Si-based Quantum Dots International conference

    K. Makihara, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  246. Formation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma International conference

    Y. Kabeya, H. Zhang, R. Fukuoka, K. Makihara, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  247. Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  248. Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diodes International conference

    T. Arai, C. Liu, A. Ohta, K. Makihara, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  249. Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara, M. Ikeda, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  250. Characterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic ForceMicroscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.1.27 - 2014.1.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  251. Progress in Determination Method of Ultrathin Oxide Bandgaps from Analysis of Energy Loss Signals for Photoelectrons

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    Event date: 2014.1.24 - 2014.1.25

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  252. Fabrication of Low-Resistance Shallow Juntion by Low Temperature As+-Ion Implantation to Ge(100)

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    Event date: 2014.1.24 - 2014.1.25

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  253. Impact of Post-Metallization Annealing on Chemical Structures in Ge-MIS Capacitors with HfO2/TaGexOy Dielectrics

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    Event date: 2014.1.24 - 2014.1.25

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  254. SiOx/TiO₂積層したTi電極MIMダイオードの抵抗スイッチング

    荒井 崇、大田 晃生、福嶋 太紀、牧原 克典、宮﨑 誠一

    第12回日本表面科学会中部支部・学術講演会 

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    Event date: 2013.12.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  255. リモート水素プラズマ支援によるSiO₂上へのFeナノドットの高密度・一括形成

    張 海、福岡 涼、壁谷 悠希、牧原 克典、宮﨑 誠一

    第12回日本表面科学会中部支部・学術講演会 

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    Event date: 2013.12.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  256. 半導体ーメタル接触界面の構造について

    宮﨑 誠一

    第13回日本表面科学会中部支部・学術講演会 

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    Event date: 2013.12.21

    Language:Japanese  

    Venue:名古屋工業大学   Country:Japan  

  257. Optoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gate International conference

    S. Miyazaki

    2013 Energy Materials Nanotechnology Fall Meeting (2013 EMN Fall Meeting) 

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    Event date: 2013.12.7 - 2013.12.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  258. Formation and characterization of hybrid nanodots embedded in gate dielectric for optoelectronic application International conference

    S. Miyazaki

    International Conference on Processing and Manufacturing of Advanced Materials 2013 (THERMEC'2013) 

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    Event date: 2013.12.2 - 2013.12.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  259. High density formation of FePt alloy nanodots on SiO2 induced by remote hydrogen plasma International conference

    R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata, and S. Miyazaki

    MORIS2013 

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    Event date: 2013.12.2 - 2013.12.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  260. Study on As+ Ion Implantation into Ge at Different Substrate Temperatures International conference

    T. Ono, K. Hashimoto, A. Ohta, H. Murakami, H. Hanafusa, S. Higashi, and S. Miyazaki

    2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2013) 

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    Event date: 2013.11.7 - 2013.11.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  261. Impact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO2/TaGexOy Stack International conference

    K. Hashimoto, T. Ono, A. Ohta, H Murakami, S. Higashi, and S. Miyazaki

    2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2013) 

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    Event date: 2013.11.7 - 2013.11.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  262. Formation of One-dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes International conference

    K. Makihara, and S. Miyazaki

    26th International Microprocesses and Nanotechnology Conference 

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    Event date: 2013.11.5 - 2013.11.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  263. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi

    ACSIN-12&ICSPM21 

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    Event date: 2013.11.4 - 2013.11.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  264. B添加Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田 敬久、牧原 克典、鈴木 善久、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  265. ゲルマニウムへの低温As+イオン注入による活性化率向上

    恒川 直輝、牧原 克典、池田 弥央、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  266. 一次元連結Si系量子ドットの電界発光減衰特性

    鈴木 善久、牧原 克典、池田 弥央、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  267. 外部磁場印加がCoPt合金ナノドットの電気伝導特性に及ぼす影響

    壁谷 悠希、張 海、福岡 諒、牧原 克典、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  268. リモート水素プラズマ支援によるSiO2上へのFeナノドットの高密度・一括形成

    張 海、福岡 諒、壁谷 悠希、牧原 克典、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  269. 導電性AFM探針によるSiナノ結晶/柱状Siナノ構造からの電子放出特性評価

    竹内 大智、牧原 克典、池田 弥央、宮﨑 誠一、可貴 裕和、林 司

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  270. AFM/KFMによる一次元連結・高密度Si系量子ドットにおける帯電電荷の経時変化計測

    恒川 直輝、牧原 克典、池田 弥央、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  271. リモート水素プラズマ支援によるFePt合金ナノドットの高密度・一括形成と磁化特性評価

    福岡 諒、張 海、牧原 克典、宮﨑 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  272. Study On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Application International conference

    S. Miyazaki

    The 224th Electrochemical Society (ECS) Meeting 

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    Event date: 2013.10.27 - 2013.11.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  273. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode MIM Diodes International conference

    A. Ohta

    224th ECS Meeting 

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    Event date: 2013.10.27 - 2013.11.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  274. Characterization of Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application International conference

    S. Miyazaki

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2013.10.24 - 2013.10.25

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  275. Study on Electronic Emission through Si-Nanocrystals/ Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2013.10.24 - 2013.10.25

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  276. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara, M. Ikeda, and S. Miyazaki

    2013 International Conference on Solid State Devices and Materials 

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    Event date: 2013.9.24 - 2013.9.27

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  277. Characterization of Electron Transport Through Ultra High Density Array of One- dimensionally Aligned Si-based Quantum Dots International conference

    H. Niimi, K. Makihara, M. Ikeda, and S. Miyazaki

    2013 International Conference on Solid State Devices and Materials 

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    Event date: 2013.9.24 - 2013.9.27

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  278. HfO2/TaGexOyを用いたGe-MIS構造の熱処理による化学構造変化

    橋本 邦明、大田 晃生、村上 秀樹、東 清一郎、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:同志社大学(京都)   Country:Japan  

  279. ゲルマニウムへの低温As+イオン注入による活性化率向上

    小野 貴寛、大田 晃生、花房 宏明、村上 秀樹、東 清一郎、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  280. 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価

    竹内 大智、牧原 克典、池田 弥央、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  281. バイアス印加が一次元連結Si系量子ドットのPL特性に及ぼす影響

    鈴木 善久、牧原 克典、池田 弥央、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  282. リモート水素プラズマ支援によるSiO2上へのFeナノドットの高密度形成

    張 海、福岡 諒、壁谷 悠希、牧原 克典、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  283. 外部磁場印加がCoPt合金ナノドットの電子輸送特性に及ぼす影響

    壁谷 悠希、福岡 諒、張 海、牧原 克典、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  284. リモート水素プラズマ支援によるFePt合金ナノドットの高密度形成と磁化特性評価

    福岡 諒、張 海、壁谷 悠希、恒川 直輝、牧原 克典、大田 晃生、宮﨑 誠一

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学(京都)   Country:Japan  

  285. 次世代MISトランジスタ実現に向けた材料プロセスインテグレーション~金属/高誘電率絶縁膜/Geチャネルゲートスタック構造の硬X線光電子分光~

    宮﨑 誠一

    SPring-8シンポジウム2013 

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    Event date: 2013.9.7 - 2013.9.8

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学宇治おうばくプラザ   Country:Japan  

  286. Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma International conference

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, and S. Miyazaki

    2013 International Symposium on Dry Process (DPS 2013) 

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    Event date: 2013.8.29 - 2013.8.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  287. Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation International conference

    Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, M. Ikeda, S. Higashi, and S. Miyazaki

    The 25th International Conference on Amorphous and Nano-crystalline Semiconductors(ICANS25) 

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    Event date: 2013.8.18 - 2013.8.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  288. Characterization of Ultrathin Ta-oixde Films as an Interfacial Control Layer Formed on Ge(100) by ALD and Layer-by-layer Methods International conference

    H. Murakami, K. Hashimoto, A. Ohta, K. Mishima, S. Higashi, and S. Miyazaki

    2013 NIMS Conference -Structure Control of Atomic/ Molecular Thin Films and Their Applications- 

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    Event date: 2013.7.1 - 2013.7.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  289. Selective Growth of Self Assembling Si and SiGe Quantum DotsAssembl International conference

    K. Makihara, M. Ikeda, and S. Miyazaki

    2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  

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    Event date: 2013.6.26 - 2013.6.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  290. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi, Makihara,M,Ikeda, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi

    2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  

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    Event date: 2013.6.26 - 2013.6.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  291. High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics

    Science and Technology for Dielectric Thin Films for Electron Devices  

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    Event date: 2013.6.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  292. SiOx/TiO2積層したMIMダイオードにおける抵抗変化特性評価

    大田 晃生、福嶋 太紀、牧原 克典、村上 秀樹、東 清一郎、宮﨑 誠一

    SDM研究会「ゲート絶縁薄膜、容量膜、機能膜およびメモリ技術」(応用物理学会、シリコンテクノロジー分科会との合同開催)  

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    Event date: 2013.6.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue: 機械振興会館   Country:Japan  

  293. HAXPES Studies of Chemical Bonding Features of Buried Interfaces for Advanced Ge-channel MIS Devices International conference

    S. Miyazaki

    5th International conference on hard X-ray photoelectron spectroscopy(HAXPES 2013) 

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    Event date: 2013.6.17 - 2013.6.20

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Sweden  

  294. Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application International conference

    K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and 

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    Event date: 2013.6.2 - 2013.6.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  295. High Density Formation of CoPt Alloy Nanodots Induced by Remote H2 Plasma International conference

    R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and 

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    Event date: 2013.6.2 - 2013.6.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  296. Determination of Bandgap Energy of Thermally-Grown Si- and Ge- Oxides from Energy Loss Spectra of Photoelectrons International conference

    A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and 

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    Event date: 2013.6.2 - 2013.6.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  297. Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and 

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    Event date: 2013.6.2 - 2013.6.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  298. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices International conference

    S. Miyazaki, K. Makihara, and M. Ikeda

    JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  299. High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma International conference

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, and S. Miyazaki

    3rd International Conference on Advanced Engineering Materials and Technology(2013) 

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    Event date: 2013.5.11 - 2013.5.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  300. 多重集積したB添加量子ドットのエレクトロルミネッセンス特性評価

    山田 敬久、牧原 克典、高見 弘貴、鈴木 善久、池田 弥央、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  301. 導電性AFM探針を用いたSiナノ結晶/柱状Siナノ構造の電子放出特性評価

    竹内 大智、牧原 克典、池田 弥央、宮﨑 誠一、可貴 裕和、林 司

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  302. リモート水素プラズマ支援によるCoPt合金ナノドットの高密度形成

    福岡 諒、張 海、壁谷 悠希、牧原 克典、大田 晃生、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  303. CoPt合金ナノドットの帯磁特性評価

    壁谷 悠希、張 海、福岡 諒、牧原 克典、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  304. Ti電極MIMダイオードにおけるSiOx/TiO2多重積層の抵抗変化特性評価

    福嶋 太紀、大田 晃生、牧原 克典、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  305. Niナノドットによる初期核発生制御を活用した高結晶性Si:H/Ge:Hヘテロ結合の低温堆積

    盧 義敏、高 金、牧原 克典、酒池 耕平、藤田 悠二、池田 弥央、大田 晃生、東 清一郎、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  306. 非接触AFMによるSiナノ結晶/柱状Siナノ構造からの電子放出メカニズム解析

    竹内 大智、牧原 克典、池田 弥央、宮﨑 誠一、可貴 裕和、林 司

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  307. パルスバイアス印加が一次元連結Si系量子ドットの電界発光に及ぼす影響

    鈴木 善久、牧原 克典、高見 弘貴、池田 弥央、宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  308. 自己組織化形成Si系量子ドットの選択成長

    牧原 克典、池田 弥央、宮﨑 誠一

    第60回春季応用物理学会 

     More details

    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  309. 縦積み連結Si系量子ドットの超高密度集積構造における電子輸送特性

    新美 博久、 牧原 克典、 池田 弥央、 宮﨑 誠一

    第60回春季応用物理学会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  310. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki, and T. Hayashi

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  311. High-density Formation and Characterization of Nanodots for Their Electron Device Application International conference

    K. Makihara, and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  312. Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices International conference

    S. Miyazaki, K. Makihara, M. Ikeda, and H. Murakami

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  313. Electroluminescence Study of Self-aligned Si-based Quantum Dots International conference

    H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  314. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara, H. Takami, M. Ikeda, and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  315. Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots International conference

    N. Tsunekawa, K. Makihara, M. Ikeda, and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  316. High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes International conference

    R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta, and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  

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    Event date: 2013.2.22 - 2013.2.23