Updated on 2021/03/29

写真a

 
NORIMATSU, Wataru
 
Organization
Graduate School of Engineering Chemical Systems Engineering 2 Associate professor
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. Doctor of engineering ( 2007.9   Waseda University ) 

Research Interests 5

  1. 電子顕微鏡

  2. 固体物理

  3. カーボンナノチューブ

  4. 2次元物質

  5. グラフェン

Research Areas 2

  1. Others / Others  / Physical Properties II

  2. Others / Others  / Physical Properties I

Current Research Project and SDGs 1

  1. ナノカーボン物質の結晶学的研究

Research History 6

  1. Nagoya University   Institute of Innovation for Future Society   Researcher

    2018.10

  2. 名古屋大学大学院工学研究科 化学システム工学専攻 准教授   准教授

    2018.4

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    Country:Japan

  3. 名古屋大学大学院工学研究科 化学・生物工学専攻 助教

    2011.4 - 2018.3

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    Country:Japan

  4. 名古屋大学エコトピア科学研究所 助教

    2008.5

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    Country:Japan

  5. 名古屋大学エコトピア科学研究所 研究員

    2007.10 - 2008.4

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    Country:Japan

  6. 早稲田大学理工学術院 助手

    2005.4 - 2007.9

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    Country:Japan

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Education 3

  1. Waseda University   Graduate School, Division of Science and Engineering

    2004.4 - 2007.3

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    Country: Japan

  2. Waseda University   Graduate School, Division of Science and Engineering

    2002.4 - 2004.3

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    Country: Japan

  3. Waseda University   Faculty of Science and Engineering

    1998.4 - 2002.3

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    Country: Japan

Professional Memberships 6

  1. 日本物理学会

  2. 応用物理学会

  3. 日本結晶学会

  4. 日本顕微鏡学会

  5. 日本金属学会

  6. フラーレン・ナノチューブ学会

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Committee Memberships 3

  1. 応用物理学会   プログラム編集委員  

    2015.10   

  2. 第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム   実行委員  

    2014.9   

  3. 日本セラミックス協会第25回秋季シンポジウム   実行委員  

    2012.9   

Awards 1

  1. 第52回(平成28年度)東海化学工業会賞学術賞

    2017.5   2次元材料グラフェン合成と構造制御

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

 

Papers 72

  1. [Selected] Synthesis of freestanding graphene on SiC by a rapid-cooling technique Reviewed

    Jianfeng Bao, Wataru Norimatsu, Hiroshi Iwata, Keita Matsuda, Takahiro Ito, and Michiko Kusunoki

    Phys. Rev. Lett.   Vol. 117   page: 205501   2016.11

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevLett.117.205501

  2. [Selected] Sequential control of step-bunching during graphene growth on SiC (0001) Reviewed

    Jianfeng Bao, Osamu Yasui, Wataru Norimatsu, Keita Matsuda, and Michiko Kusunoki

    Appl. Phys. Lett.   Vol. 109   page: 081602   2016.8

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4961630

  3. [Selected] Very low Schottky barrier height at carbon nanotube and silicon carbide interface Reviewed

    Masafumi Inaba, Kazuma Suzuki, Megumi Shibuya, Chih-Yu Lee, Yoshiho Masuda, Naoya Tomatsu, Wataru Norimatsu, Atsushi Hiraiwa, Michiko Kusunoki, and Hiroshi Kawarada

    Appl. Phys. Lett.   Vol. 106   page: 123501   2015.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4916248

  4. [Selected] Formation of a nitride interface in epitaxial graphene on SiC (0001) Reviewed

    Yoshiho Masuda, Wataru Norimatsu and Michiko Kusunoki

    Phys. Rev. B   Vol. 91   page: 075421   2015.2

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.075421

  5. [Selected] Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): Impact of the substrate steps Reviewed

    Masato Morita, Wataru Norimatsu, Hu-Jun Qian, Stephan Irle, and Michiko Kusunoki

    Appl. Phys. Lett.   Vol. 103   page: 141602   2013.10

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4824425

  6. [Selected] High-quality graphene on SiC(000-1) formed through an epitaxial TiC layer Reviewed

    Keisuke Kimura, Kentaro Shoji, Yuta Yamamoto, Wataru Norimatsu, and Michiko Kusunoki

    Phys. Rev. B   Vol. 87   page: 075431   2013.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.87.075431

  7. [Selected] Band alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy Reviewed

    Takahiro Maruyama, Satoshi Sakakibara, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Hiroyuki Yamane, and Nobuhiro Kosugi

    Appl. Phys. Lett.   Vol. 101   page: 092106   2012.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4748792

  8. [Selected] Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides Reviewed

    Chunlei Wan, Yifeng Wang, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    Appl. Phys. Lett.   Vol. 100   page: 101913   2012.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3691887

  9. [Selected] Formation mechanism of graphene layers on SiC(000-1) in a high-pressure argon atmosphere Reviewed

    Wataru Norimatsu, Juji Takada, and Michiko Kusunoki

    Phys. Rev. B   Vol. 84   page: 035424   2011.7

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.84.035424

  10. [Selected] Selective formation of ABC-stacked graphene layers on SiC(0001) Reviewed

    Wataru Norimatsu and Michiko Kusunoki

    Phys. Rev. B   Vol. 81   page: 161410   2010.4

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.81.161410

  11. [Selected] Crystallographic features of the orbital-ordered, and charge-and-orbital-ordered states in Sr2-xNdxMnO4 Reviewed

    Wataru Norimatsu and Yasumasa Koyama

    Phys. Rev. B   Vol. 75   page: 235121   2007

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.75.235121

  12. [Selected] Domain-structure relaxation in the tetragonal-to-orthorhombic phase transition of the layered perovskite Sr1.8La0.2Mn1-yFeyO4 Reviewed

    Wataru Norimatsu and Yasumasa Koyama

    Phys. Rev. B   Vol. 75   page: 104416   2007

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.75.104416

  13. [Selected] Evolution of orthorhombic domain structures during the tetragonal-to-orthorhombic phase transition in the layered perovskite Sr2-xLaxMnO4 Reviewed

    Wataru Norimatsu and Yasumasa Koyama

    Phys. Rev. B   Vol. 74   page: 085113   2006

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.74.085113

  14. Structure of quasi-free-standing graphene on the SiC (0001) surface prepared by the rapid cooling method

    Sumi Tatsuya, Nagai Kazuki, Bao Jianfeng, Terasawa Tomo-o, Norimatsu Wataru, Kusunoki Michiko, Wakabayashi Yusuke

    APPLIED PHYSICS LETTERS   Vol. 117 ( 14 ) page: 143102-1 - 143102-5   2020.10

  15. Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film

    Norimatsu Wataru, Matsuda Keita, Terasawa Tomo-o, Takata Nao, Masumori Atsushi, Ito Keita, Oda Koji, Ito Takahiro, Endo Akira, Funahashi Ryoji, Kusunoki Michiko

    NANOTECHNOLOGY   Vol. 31 ( 14 )   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6528/ab62cf

    Web of Science

  16. A study on formation mechanisms of relief structure formed in situ on the surface of ceramics Reviewed

    Wei Zhang, Seiji Yamashita, Takeshi Kumazawa, Fumihito Ozeki, Hideki Hyuga, Wataru Norimatsu, and Hideki Kita

    Ceram. Int.   Vol. 45   page: 23143   2019.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.ceramint.2019.08.008

  17. Longitudinal strain of epitaxial graphene monolayers on SiC substrates evaluated by z-polarization Raman microscopy

    Saito Yuika, Tokiwa Kenshiro, Kondo Takahiro, Bao Jianfeng, Terasawa Tomo-o, Norimatsu Wataru, Kusunoki Michiko

    AIP ADVANCES   Vol. 9 ( 6 )   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5099430

    Web of Science

  18. エピタキシャルグラフェンの構造と物性 Invited Reviewed

    乗松 航

    日本結晶学会誌   Vol. 61   page: 35   2019.3

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    Authorship:Lead author   Language:Japanese  

    DOI: 10.5940/jcrsj.61.35

  19. Acceleration of Photocarrier Relaxation in Graphene Achieved by Epitaxial Growth: Ultrafast Photoluminescence Decay of Monolayer Graphene on SiC

    Imaeda Hirotaka, Koyama Takeshi, Kishida Hideo, Kawahara Kenji, Ago Hiroki, Sakakibara Ryotaro, Norimatsu Wataru, Terasawa Tomo-o, Bao Jianfeng, Kusunoki Michiko

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 122 ( 33 ) page: 19273-19279   2018.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcc.8b06845

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  20. エピタキシャルグラフェンと電子顕微鏡 Invited

    楠 美智子, 増田 由穂, 山本 悠太, 乗松 航

    顕微鏡   Vol. 53   page: 62   2018.8

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  21. Electrical contact properties between carbon nanotube ends and a conductive atomic force microscope tip

    Inaba Masafumi, Ohara Kazuyoshi, Shibuya Megumi, Ochiai Takumi, Yokoyama Daisuke, Norimatsu Wataru, Kusunoki Michiko, Kawarada Hiroshi

    JOURNAL OF APPLIED PHYSICS   Vol. 123 ( 24 )   2018.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5027849

    Web of Science

  22. Frequency dependent ac transport of films of close-packed carbon nanotube arrays

    Endo A., Katsumoto S., Matsuda K., Norimatsu W., Kusunoki M.

    Journal of Physics: Conference Series   Vol. 969   2018

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1742-6596/969/1/012129

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  23. Preparation of Stable Silver Nanoparticles Having Wide Red-To-Near-Infrared Extinction Reviewed

    Kawamura Shiori, Matsubara Kazuki, Sakai Sotaro, Sasaki Kazuhisa, Saito Masataro, Saito Kenji, Yagi Masayuki, Norimatsu Wataru, Sasai Ryo, Kusunoki Michiko, Eguchi Miharu, Yin Shu, Asakura Yusuke, Yui Tatsuto

    Global Challenges   Vol. 2 ( 3 ) page: 1700105   2018.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/gch2.201700105

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  24. Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands Reviewed

    Sugawara Katsuaki, Yamamura Norifumi, Matsuda Keita, Norimatsu Wataru, Kusunoki Michiko, Sato Takafumi, Takahashi Takashi

    NPG Asia Materials   Vol. 10   page: e466   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/am.2017.238

    Web of Science

  25. In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide Reviewed

    Matsuda Keita, Norimatsu Wataru, Bao Jianfeng, Kawarada Hiroshi, Kusunoki Michiko

    Journal of Applied Physics   Vol. 123 ( 4 ) page: 045104   2018.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5004507

    Web of Science

  26. 負の熱膨張を利用したグラフェン化 Invited

    乗松 航

    パリティ   Vol. 8   page: 40   2017.8

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    Authorship:Lead author   Language:Japanese  

  27. Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator Invited Reviewed

    K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao, W. Norimatsu, and M. Kusunoki

    ECS Transactions   Vol. 79   page: 91   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/07901.0091ecst

  28. Two-carrier model on the magnetotransport of epitaxial graphene containing coexisting single-layer and bilayer areas Reviewed

    Akira Endo, Jianfeng Bao, Wataru Norimatsu, Michiko Kusunoki, Shingo Katsumoto, and Yasuhiro Iye

    Philosophical Magazine   Vol. 97   page: 1755   2017.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1080/14786435.2017.1311429

  29. Photoinduced electron transfer in layer-by-layer thin solid films containing cobalt oxide nanosheets, porphyrin, and methyl viologen Reviewed

    R. Sasai, Y. Kato, W. Soontornchaiyakul, H. Usami, A. Masumori, W. Norimatsu, and S. Takagi

    Phys. Chem. Chem. Phys.   Vol. 19   page: 5611   2017.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/C6CP07250J

  30. SiC上エピタキシャルグラフェンの合成と展望 Invited

    楠 美智子, 乗松 航

    光アライアンス   Vol. 27   page: 36   2016.11

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    Language:Japanese  

  31. Behavior of oxidized platinum nanoparticles on an aligned carbon nanotube forest Reviewed

    Keita Matsuda, Wataru Norimatsu, Shigeo Arai, and Michiko Kusunoki

    J. Appl. Phys.   Vol. 120   page: 142111   2016.8

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    DOI: 10.1063/1.4961721

  32. Thermoelectric properties of Nb-doped (Nd0.55Li0.36)TiO3 bulk ceramics with superlattice structure Reviewed

    Yaoshuai Ba, Yifeng Wang, Chunlei Wan, Wataru Norimatsu, Michiko Kusunoki, Dechun Ba, and Kunihito Koumoto

    J. Alloys and Compounds   Vol. 664   page: 487   2016.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jallcom.2015.12.231

  33. Contact conductivity of uncapped carbon nanotubes formed by silicon carbide decomposition Reviewed

    Masafumi Inaba, Chih-Yu Lee, Kazuma Suzuki, Megumi Shibuya, Miho Myodo, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, and Hiroshi Kawarada

    J. Phys. Chem. C   Vol. 120   page: 6232   2016.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcc.5b11815

  34. Synthesis of copper nanoparticles within the interlayer space of titania nanosheet transparent films Reviewed

    Kazuhisa Sasaki, Kazuki Matsubara, Shiori Kawamura, Kenji Saito, Masayuki Yagi, Wataru Norimatsu, Ryo Sasai, and Tatsuto Yui

    J. Mater. Chem.   Vol. 4   page: 1476   2016.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/C5TC03152D

  35. Growth and Features of Epitaxial Graphene on SiC Invited Reviewed

    Michiko Kusunoki, Wataru Norimatsu, Jianfeng Bao, Koichi Morita, and Ulrich Starke

    Journal of the Physical Society of Japan   Vol. 84   page: 121014   2015.10

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    DOI: 10.7566/JPSJ.84.121014

  36. Application of vertically aligned carbon nanotubes on burnishing slider in cleaning process of magnetic disk surfaces Reviewed

    Hiroshi Tani, Keisuke Konishi, Wataru Norimatsu, Michiko Kusunoki, and Norio Tagawa

    Microsyst. Technol.   Vol. 21   page: 295   2015

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s00542-014-2135-6

  37. SiC上エピタキシャルグラフェンの成長と優位性 Invited Reviewed

    楠 美智子, 乗松 航

    顕微鏡   Vol. 50   page: 28   2015.6

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  38. Growth of graphene from SiC and its mechanisms (Invited Review) Invited Reviewed

    Wataru Norimatsu and Michiko Kusunoki

    Semicond. Sci. Tech.   Vol. 29   page: 064009   2014

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0268-1242/29/6/064009

  39. Growth mechanisms and selectivity for graphene or carbon nanotube formation on SiC (000-1): A density-functional tight-binding molecular dynamics study Reviewed

    Noriyuki Ogasawara, Wataru Norimatsu, Stephan Irle, and Michiko Kusunoki

    Chem. Phys. Lett.   Vol. 595-596   page: 266   2014.2

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    DOI: 10.1016/j.cplett.2014.02.019

  40. Structural features of epitaxial graphene on SiC {0001} surfaces (Invited Review) Invited Reviewed

    Wataru Norimatsu, and Michiko Kusunoki

    J. Phys. D: Appl. Phys.   Vol. 47   page: 094017   2014.2

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0022-3727/47/9/094017

  41. Epitaxial graphene on SiC {0001}: advances and perspectives (Invited Review) Invited Reviewed

    Wataru Norimatsu and Michiko Kusunoki

    Phys. Chem. Chem. Phys.   Vol. 16   page: 3501   2014.1

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/C3CP54523G

  42. Effects of transition metal substitution on the thermoelectric properties of metallic (BiS)1.2(TiS2)2 misfit layer sulfide Reviewed

    Yulia Eka Putri, Chunlei Wan, Feng Dang, Takao Mori, Yuto Ozawa, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    J. Elec. Mater.   Vol. 43   page: 1870   2014.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s11664-013-2894-3

  43. Enhanced thermoelectric performance of Nb-doped SrTiO3 by nano-inclusion with low thermal conductivity Reviewed

    Ning Wang, Haijun Chen, Hongcai He, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    Sci. Rep.   Vol. 3   page: 3449   2013.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep03449

  44. Glass-like thermal conductivity of Nd2/3-xLi3xTiO3 bulk ceramics with nanochessboard superlattice structure Reviewed

    Yaoshuai Ba, Chunlei Wan, Yifeng Wang, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    Mater. Lett.   Vol. 97   page: 191   2013.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.matlet.2013.01.107

  45. SiC表面上グラフェンの成長とその特徴

    乗松 航, 楠 美智子

    セラミックデータブック2012   Vol. 40   page: 128   2012.12

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  46. Thermoelectric properties of n-type Mn3-xCrxSi4Al2 in Air Reviewed

    Ryoji Funahashi, Y. Matsumura, Hi. Tanaka, T. Takeuchi, W. Norimatsu, E. Combe, R. O. Suzuki, Y. Wang, C. Wan, S. Katsuyama, M. Kusunoki, and Kunihito Koumoto

    J. Appl. Phys.   Vol. 112   page: 073713   2012.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4755793

  47. SiC表面分解によるカーボンナノチューブ膜の開発と応用

    楠 美智子、乗松 航, 山本 元弘、宇佐美 初彦、三宅 晃司

    トライボロジスト   Vol. 57   page: 682   2012.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.4139/sfj.57.690

  48. Transport properties of closely-packed zigzag carbon nanotubes on SiC tuned by Si-doping Reviewed

    Wataru Norimatsu, Takehiro Maruyama, Kenta Yoshida, Koichi Takase, and Michiko Kusunoki

    Appl. Phys. Exp.   Vol. 5   page: 105102   2012.9

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.5.105102

  49. Plan-view of Few Layer Graphene on 6H-SiC by Transmission Electron Microscopy Reviewed

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki

    e-J. Surf. Sci. Nanotech.   Vol. 10   page: 396   2012.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/ejssnt.2012.396

  50. First Principles Calculations of Close-packed and doped Carbon Nanotubes Reviewed

    Noriyuki Ogasawara, Wataru Norimatsu, and Michiko Kusunoki

    e-J. Surf. Sci. Nanotech.   Vol. 10   page: 411   2012.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/ejssnt.2012.411

  51. Epitaxial growth of boron-doped graphene by thermal decomposition of B4C Reviewed

    Wataru Norimatsu, Koichiro Hirata, Yuta Yamamoto, Shigeo Arai, and Michiko Kusunoki

    J. Phys.: Condens. Matter   Vol. 24   page: 314207   2012.7

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0953-8984/24/31/314207

  52. Stacking structures of graphene layers on SiC (0001) and (000-1) Reviewed

    Jun Kuroki, Wataru Norimatsu, J. Takada, and Michiko Kusunoki

    AMTC Lett.   Vol. 3   page: 230   2012.5

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  53. Crystallographic features of boron-doped graphene grown by thermal decomposition of B4C Reviewed

    Wataru Norimatsu, Koichiro Hirata, and Michiko Kusunoki

    AMTC Lett.   Vol. 3   page: 202   2012.5

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 202

  54. Patterning of Aligned CNT Films Using SiO2 Particles Monolayer as a Mask Reviewed

    Keita Matsuda, Wataru Norimatsu, and Michiko Kusunoki

    e-J. Surf. Sci. Nanotech.   Vol. 10   page: 198   2012.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/ejssnt.2012.198

  55. Near-Edge X-Ray Absorption Fine Structure Study of Vertically Aligned Carbon Nanotubes Grown by the Surface Decomposition of SiC Reviewed

    Takahiro Maruyama, Yuki Ishiguro, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Kenta Amemiya, Hideshi Ishii, and Toshiaki Ohta

    Jpn. J. Appl. Phys.   Vol. 51   page: 055102   2012.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.055102

  56. Nitrate-Ion-Selective Exchange Ability of Layered Double Hydroxide Consisting of MgII and FeIII Reviewed

    Ryo Sasai, Wataru Norimatsu, Makoto Ogawa, and Yukitaka Matsumoto

    J. Hazard. Mater.   Vol. 215   page: 311   2012.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jhazmat.2012.02.063

  57. Effects of alkaline earth doping on the thermoelectric properties of misfit layer sulfides Reviewed

    Yulia Eka Putri, Chunlei Wan, Yifeng Wang, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    Scripta Materialia   Vol. 66   page: 895   2012.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.scriptamat.2012.02.010

  58. SiC表面へのナノカーボン薄膜制御 Invited

    楠 美智子, 乗松 航

    化学工業   Vol. 62   page: 409   2011.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

  59. Intercalation: building a natural superlattice for better thermoelectric performance in layered chalcogenides Reviewed

    Chunlei Wan, Yifeng Wang, Ning Wang, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    J. Elec. Mater.   Vol. 40   page: 1271   2011.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s11664-011-1565-5

  60. SiC表面分解法によるナノカーボン薄膜の構造制御 Invited

    楠 美智子, 乗松 航

    未来材料   Vol. 11   page: 2   2011.4

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 2

  61. Chemical state analysis of Si-doped CNT on SiC by hard x-ray photoelectron spectroscopy Reviewed

    Jin-Young Son, Masatake Machida, Hiroshi Oji, Yoshio Watanabe, Takehiro Maruyama, Wataru Norimatsu, and Michiko Kusunoki

    e-J. Surf. Sci. Nanotech.   Vol. 9   page: 54   2011.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/ejssnt.2011.54

  62. SiC表面分解法によるグラフェンの透過型電子顕微鏡観察 Reviewed

    乗松航、楠美智子

    日本結晶成長学会誌   Vol. 37   page: 24   2010.10

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    Authorship:Lead author   Language:Japanese  

  63. Development of novel thermoelectric materials by reduction of lattice thermal conductivity Reviewed

    Chunlei Wan, Yifeng Wang, Ning Wang, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto

    Sci. Technol. Adv. Mater.   Vol. 11   page: 044306   2010.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1468-6996/11/4/044306

  64. Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC Reviewed

    Wataru Norimatsu, and Michiko Kusunoki

    J. Nanosci. Nanotech.   Vol. 10   page: 3884   2010

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1166/jnn.2010.1998

  65. Formation process of graphene on SiC (0001) Reviewed

    Wataru Norimatsu, and Michiko Kusunoki

    Physica E   Vol. 42   page: 691   2010

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physe.2009.11.151

  66. Fabrication of a Multi-Layered Carbon Nanotube/SiC Stack Structure Reviewed

    Takehiro Maruyama, Wataru Norimatsu, and Michiko Kusunoki

    Physica E   Vol. 42   page: 767   2010

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physe.2009.12.003

  67. Interface Structures of Graphene-on-SiC Produced by the SiC Surface Decomposition Method Invited Reviewed

    Wataru Norimatsu and Michiko Kusunoki

    Journal of the crystallographic society of Japan   Vol. 51 ( 6 ) page: 313-319   2009.12

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    Authorship:Lead author   Language:Japanese  

    DOI: 10.5940/jcrsj.51.313

  68. Novel upgraded method of recycling spent SiC abrasive powders to CNT particles Reviewed

    Ryo Sasai, Takayuki Morishita, Wataru Norimatsu, Motohiro Yamamoto, Akihiko Ichikawa, and Michiko Kusunoki

    J. Ceram. Soc. J.   Vol. 117   page: 815   2009

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.117.815

  69. カーボンナノチューブ/SiC複合材料の放熱応用 Invited

    乗松 航, 楠 美智子

    NEW DIAMOND   Vol. 93   page: 30   2009

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  70. Transitional structures of the interface between graphene and 6H-SiC (0001) Reviewed

    Wataru Norimatsu and Michiko Kusunoki

    Chem. Phys. Lett.   Vol. 468   page: 52-56   2009.1

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.cplett.2008.11.095

  71. Crystallographic features of the orbital-ordered state in the layered perovskite manganite Sr2-xPrxMnO4 Reviewed

    Wataru Norimatsu, Go Shindo and Yasumasa Koyama

    Physica B   Vol. 403   page: 1585   2008

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physb.2007.10.323

  72. Stability of electronic states in the layered perovskite Sr2-xNdxMnO4 Reviewed

    Wataru Norimatsu and Yasumasa Koyama

    Physica C   Vol. 463-465   page: 115   2007

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physc.2007.05.016

▼display all

Books 9

  1. Physics and Chemistry of Graphene -Graphene to Nanographene-

    Michiko Kusunoki, and Wataru Norimatsu( Role: Joint author)

    Jenny Stanford Publishing  2019.11  ( ISBN:978-9814800389

  2. Handbook of Graphene, vol. 1: Growth, Synthesis, and Functionalization

    Wataru Norimatsu, Tomo-o Terasawa, Keita Matsuda, Jianfeng Bao, and Michiko Kusunoki( Role: Joint author)

    Wiley Scrivener Publishing  2019.7  ( ISBN:978-1119468554

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    Language:English Book type:Scholarly book

    その他リンク: https://www.amazon.com/Handbook-Graphene-Materials-Ashutosh-Tiwari/dp/1119468558

  3. Epitaxial Graphene on Silicon Carbide: Modelling, Characterization, and Applications

    Wataru Norimatsu, Stephan Irle, and Michiko Kusunoki( Role: Joint author)

    Pan Stanford Publishing  2018.4 

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    Language:English Book type:Scholarly book

    その他リンク: https://www.amazon.co.jp/dp/B0797VSXHB/ref=dp-kindle-redirect?_encoding=UTF8&btkr=1

  4. カーボンナノチューブ・グラフェンの応用研究最前線

    楠 美智子, 乗松 航( Role: Joint author)

    エヌ・ティー・エス  2016.9 

  5. 技術情報協会編, “コンポジット材料の混練・コンパウンド技術と分散・界面制御”, 第4章第7節 高密度・高配向カーボンナノチューブ膜の高熱伝導化

    乗松 航, 楠 美智子( Role: Joint author)

    技術情報協会  2013.4 

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    Language:Japanese

  6. グラフェンの機能と応用展望II 第7章 SiC表面へのナノカーボン薄膜制御

    楠 美智子, 乗松 航( Role: Joint author)

    シーエムシー出版  2012.12 

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    Language:Japanese

  7. Layer-Structured Metal Sulfides as Novel Thermoelectric Materials

    Chunlei Wan, Yifeng Wang, Ning Wang, Y.E. Putri, Wataru Norimatsu, Michiko Kusunoki, and Kunihito Koumoto( Role: Joint author)

    CRC Press, Taylor & Francis Group, edited by D. M. Rowe  2012.3 

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    Language:English

  8. Electronic Properties of Carbon Nanotubes / 2. A Close-Packed-Carbon-Nanotube Film on SiC for Thermal Interface Material Applications

    Wataru Norimatsu, Chihiro Kawai and Michiko Kusunoki( Role: Joint author)

    Intech OPEN ACCESS PUBLISHER  2011.7  ( ISBN:978-953-307-499-3

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    Language:English

  9. 放熱・高熱伝導材料、部品の開発と特性および熱対策技術 第3章 第9節 カーボンナノチューブ/SiC複合材料の放熱応用

    乗松航、楠美智子( Role: Joint author)

    技術情報協会  2010.4 

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    Language:Japanese

▼display all

Presentations 300

  1. [Invited]SiC上グラフェン研究の進展と展望 Invited

    第68回応用物理学会春季学術講演会シンポジウム  2021.3.17 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  2. [Invited]グラフェン/SiC 界面を利用した新機能開拓 Invited

    乗松航

    第13回九大2D物質研究会  2021.2.23 

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    Event date: 2021.2.23

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  3. [Invited] グラフェン/SiC系における構造制御と電子状態 Invited

    乗松航

    第12回九大2D物質研究会 

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    Event date: 2020.1.24

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:コープイン京都   Country:Japan  

  4. [Invited] SiC上エピタキシャルグラフェンの成長と構造・物性制御 Invited

    乗松航

    グラフェン・酸化グラフェン合同シンポジウム 

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    Event date: 2019.12.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:TKPガーデンシティPREMIUM秋葉原   Country:Japan  

  5. [Invited] Growth of functional epitaxial graphene Invited International conference

    Wataru Norimatsu

    Joint 5th International Symposium on Frontiers in Materials Science and 3rd International Symposium on Nano-materials, Technology and Applications 

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    Event date: 2019.11.10 - 2019.11.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  6. [Invited] Growth of epitaxial graphene by thermal decomposition of carbides Invited International conference

    Wataru Norimatsu

    International Conference on Materials and Systems for Sustainability 

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    Event date: 2019.11.1 - 2019.11.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya University   Country:Japan  

  7. [Invited] Functional epitaxial graphene grown by thermal decomposition of carbides Invited International conference

    Wataru Norimatsu

    International Symposium on Epi-Graphene 2019 

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    Event date: 2019.8.25 - 2019.8.28

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:TU Chemnitz, Germany   Country:Japan  

  8. [Plenary] Interface engineering of epitaxial graphene Invited International conference

    Wataru Norimatsu

    1st Tianjin International Symposium on Epitaxial Graphene (TISEG-1) 

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    Event date: 2018.7.23

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Tianjin University, Tianjin, China   Country:China  

  9. [Invited] Interface engineering of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu

    6th International Symposium on Graphene Devices (ISGD-6) 

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    Event date: 2018.7.18

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tianjin University, Tianjin, China   Country:Russian Federation  

  10. [Invited] Interface Engineering of Epitaxial Graphene Grown on SiC Invited International conference

    Wataru Norimatsu

    Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp.-Hokkaido Univ. Joint Symposium (NTTH-2017) 

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    Event date: 2017.7.13

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  11. [Invited] Interface engineering of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu

    Collaborative Conference on Materials Research (CCMR) 2017 

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    Event date: 2017.6.29

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:International Convention Center Jeju, South Korea   Country:Korea, Republic of  

  12. [Invited] エピタキシャルグラフェンの界面制御 Invited

    乗松航、楠美智子

    6大学連携プロジェクト「文科省学際国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト」第1回公開討論会 

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    Event date: 2017.3.30

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  13. [Invited] エピタキシャルグラフェンの界面制御と角度分解光電子分光測定 Invited

    乗松航、伊藤孝寛、楠美智子

    第6回名古屋大学シンクロトロン光研究センターシンポジウム 

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    Event date: 2017.3.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  14. [Invited] SiC上グラフェンの課題と界面制御 Invited

    乗松航、楠美智子

    第9回九大2次元物質研究会 

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    Event date: 2017.1.27

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:九州大学応用力学研究所   Country:Japan  

  15. [Invited] Interface modification of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu

    International Conference on Technologically Advanced Materials and Asian Meeting on Ferroelectrics (ICTAM-AMF10) 

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    Event date: 2016.11.7 - 2016.11.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:University of Delhi, India   Country:India  

  16. [Invited] Negative thermal expansion induced graphenization of buffer layer on SiC Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    EMN Meeting on 2-D Materials 

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    Event date: 2016.5.19 - 2016.5.23

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:San Sebastian, Spain   Country:Spain  

  17. [Invited] Growth of epitaxial graphene on SiC and its interface modification Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    2nd Annual World Congress of Smart Materials (WCSM-2016) 

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    Event date: 2016.3.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  18. [Invited] 負の熱膨張を利用したバッファー層の急冷処理によるグラフェン化 Invited

    乗松航

    第8回九大グラフェン研究会「原子層物質の成長と物性」 

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    Event date: 2016.1.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  19. [Invited] Growth and functionalization of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    Collaborative Conference on Crystal Growth (3CG) 

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    Event date: 2015.12.15

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  20. [Invited] Epitaxial graphene growth and its electronic functionalization Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    2nd International Symposium on Frontiers in Materials Science 

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    Event date: 2015.11.20

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  21. [Invited] Epitaxial graphene growth on SiC and its interface modification Invited

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    Event date: 2015.11.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  22. [Invited] Growth of graphene and novel 2D film on SiC Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    The Second Symposium on 2D electronic Materials (Joint ACCGE/OMVPE) 

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    Event date: 2015.8.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  23. [Invited] SiC上グラフェンの構造制御と輸送特性 Invited

    乗松航、楠美智子

    日本セラミックス協会第49回基礎科学部会セミナー 

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    Event date: 2015.7.17

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  24. [Invited] 精密SiC表面で実現する高品質グラフェン成長とその展開 Invited

    乗松航、楠美智子

    第3回表面創成工学の新展開研究会 

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    Event date: 2014.11.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルグランド天空、秋田県田沢湖   Country:Japan  

  25. [Invited] Growth and structural/electronic properties of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu and Michiko Kusunoki

    2014 EMN Meeting 

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    Event date: 2014.6.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Mexico  

  26. [Invited] エピタキシャルグラフェンの構造解析 Invited

    乗松航、楠美智子

    東北大学通研共同プロジェクト講演会 

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    Event date: 2014.3.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  27. [Invited] 透過型電子顕微鏡によるエピタキシャルグラフェンの結晶学的研究 Invited

    乗松航、楠美智子

    第6回グラフェン研究会 

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    Event date: 2014.1.24

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  28. [Invited] Epitaxial Graphene Growth by Thermal Decomposition of SiC Invited International conference

    Wataru Norimatsu, and Michiko Kusunoki

    3rd CAMPUS Asia Symposium on Chemistry and Materials 

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    Event date: 2013.11.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  29. [Invited] Electric properties of closely-packed CNTs film controlled by doping Invited International conference

    Wataru Norimatsu, Takehiro Maruyama, Koji Oda, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.26

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  30. [Invited] グラフェン研究の最新成果 Invited

    乗松航、楠美智子

    第6回材料フォーラム 

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    Event date: 2012.1.30

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  31. [Invited] Features of Epitaxial Graphene on SiC Invited International conference

    Wataru Norimatsu, Michiko Kusunoki

    The 2nd Sino-Japan Energy Materials and Devices Joint Workshop (JST-MOST & CREST) 

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    Event date: 2011.12.24

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  32. [Invited] Features of Epitaxial Graphene on SiC Invited International conference

    Wataru Norimatsu, Michiko Kusunoki

    Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp.-Hokkaido Univ.-Univ. Electron. Sci. Tech. China Joint Symposium (NTTH2011) 

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    Event date: 2011.12.22

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  33. [Invited] Transmission electron microscope observations of epitaxial graphene on SiC Invited International conference

    Wataru Norimatsu, and Michiko Kusunoki

    3rd International Symposium on the Science and Technology of Epitaxial Graphene (STEG 3) 

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    Event date: 2011.10.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  34. [Invited] Transmission electron microscope observations of nano-structured materials Invited International conference

    Wataru Norimatsu, Michiko Kusunoki, Chunlei Wan, Ning Wang, and Kunihito Koumoto

    JST-MOST Project and CREST-Koumoto Team Joint Workshop 

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    Event date: 2010.10.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Jozankei, Hokkaido   Country:Japan  

  35. Hex-Au(001)基板上のグラフェンのエネルギーギャップの起源

    寺澤知潮、保田諭、松永和也、林直輝、田中慎一郎、乗松航、伊藤孝寛、町田真一、朝岡秀人

    第68回応用物理学会春季学術講演会  2021.3.16 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  36. 水素インターカレーションによる SiC上グラフェン形成のメカニズム

    榊原涼太郎、乗松航

    第68回応用物理学会春季学術講演会  2021.3.17 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  37. 水素インターカレーションによるSiC上グラフェン形成の初期過程

    榊原涼太郎、乗松航

    第19回日本表面真空学会中部支部学術講演会  2020.12.19 

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    Event date: 2020.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  38. エピタキシャルグラフェン被覆による超伝導体TaC 薄膜の転移温度向上

    近藤大斗、林直樹、伊藤孝寛、遠藤彰、乗松航

    第19回日本表面真空学会中部支部学術講演会  2020.12.19 

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    Event date: 2020.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  39. エピタキシャルグラフェンによる超伝導体薄膜の転移温度向上

    乗松航、近藤大斗、伊藤孝寛

    学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト第5回公開討論会  2020.11.30 

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    Event date: 2020.11.30

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

  40. SiC表面分解法によるカーボンナノチューブ成長への水の影響

    鈴木航、乗松航

    第81回応用物理学会秋季学術講演会  2020.9.8 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  41. SiC(000-1)面上多層グラフェンの回転角制御

    乗松航、包建峰、林直樹、伊藤孝寛、眞砂紀之、前川拓滋、森本満、日比野浩樹

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  42. 超伝導体TaC薄膜のグラフェン被覆による転移温度向上

    近藤大斗、林直樹、伊藤孝寛、遠藤彰、乗松航

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  43. ミリメートルスケールツイスト2層グラフェンにおけるフラットバンド

    佐藤京樹、林直樹、伊藤孝寛、眞砂紀之、森本満、前川拓滋、Kuan Qiao、Jeehwan Kim、若林克法、日比野浩樹、乗松航

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  44. Nd-Fe-B系磁石材料の構造・物性相関解析

    乗松航、包建峰、山下誠司、北英紀、川原田洋、井上靖秀、小山泰正、柳内克昭

    学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト第4回公開討論会 

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    Event date: 2020.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  45. B4C熱分解によるグラフェンの成長と物性

    乗松航、川原田洋

    学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト第4回公開討論会 

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    Event date: 2020.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  46. エピタキシャルグラフェンの電子状態に与える界面の影響

    佐藤京樹、榊原涼太郎、河原憲治、吾郷浩樹、林直樹、伊藤孝寛、乗松航

    第18回日本表面真空学会中部支部学術講演会 

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    Event date: 2019.12.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  47. SiC上グラフェンにおける高圧水素インターカレーションとそのメカニズム

    榊原涼太郎、乗松航

    第18回日本表面真空学会中部支部学術講演会 

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    Event date: 2019.12.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  48. Functional epitaxial graphene grown by thermal decomposition of carbide materials International conference

    Wataru Norimatsu

    International Conference on Materials and Systems for Sustainability 

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    Event date: 2019.11.1 - 2019.11.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  49. Quasi-free-standing graphene formed under high-pressure hydrogen International conference

    Ryotaro Sakakibara and Wataru Norimatsu

    International Symposium on Epi-Graphene 2019 

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    Event date: 2019.8.25 - 2019.8.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  50. Electronic states of graphene transferred onto the buffer layer on SiC International conference

    Keiju Sato, Ryotaro Sakakibara, Kenji Kawahara, Hiroki Ago, Naoki Hayashi, Takahiro Ito, and Wataru Norimatsu

    International Symposium on Epi-Graphene 2019 

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    Event date: 2019.8.25 - 2019.8.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  51. Quasi-freestanding epitaxial graphene obtained under high-pressure hydrogen

    Ryotaro Sakakibara and Wataru Norimatsu

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    Event date: 2019.8.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  52. Electronic states of epitaxial graphene and CVD graphene transferred onto the buffer layer

    Keiju Sato, Ryotaro Sakakibara, Kenji Kawahara, Hiroki Ago, Naoki Hayashi, Takahiro Ito, and Wataru Norimatsu

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    Event date: 2019.8.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  53. SiC上グラフェンの移動度に及ぼす界面の影響

    榊原涼太郎、河原憲治、吾郷浩樹、乗松航

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  54. Ni intercalation between graphene and silicon carbide International conference

    Wataru Norimatsu, Tomo-o Terasawa, Yutaro Ouchi, Takahiro Ito, and Michiko Kusunoki

    Graphene Week 2018 

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    Event date: 2018.9.13

    Language:English   Presentation type:Poster presentation  

    Venue:Kursaal Conference Center, San Sebastian, Spain   Country:Spain  

  55. エピタキシャル炭化アルミニウム薄膜の成長及びその熱分解によるグラフェン形成

    松田敬太、福井舞、乗松航、楠美智子

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  56. Visualization of Zero-Dimensional Plasmons in Graphene Quantum Dots with Near-Field Infrared Microscopy International conference

    Okamoto T., Sasagawa A., Harada Y., Nakano S., Norimatsu W., Kusunoki M., Kawano Y.

    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) 

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    Event date: 2018

    Language:English   Presentation type:Oral presentation (general)  

  57. Epitaxial growth of two-dimensional GaN film on SiC substrates International conference

    Seina Nakao, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  58. Formation of zigzag graphene nanoribbons on vicinal SiC (0001) International conference

    Yota Harada, Keita Matsuda, K. Higuchi, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  59. Morphology control of epitaxial graphene by Ar flow rate in large-scale International conference

    Tomo-o Terasawa, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  60. Fabrication of the carbon nanotubes/graphene composite film on silicon carbide International conference

    Yoshito Nagae, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  61. Tuning of Cu intercalation between graphene and SiC (0001) International conference

    Tomo-o Terasawa, Masato Imai, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  62. Negative-thermal-expansion-induced graphenization of buffer layer on SiC International conference

    Jianfeng Bao, Wataru Norimatsu, Keita Matsuda, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  63. Carrier mobility of graphene on SiC: influence of the substrates International conference

    Wataru Norimatsu, Jianfeng Bao, Tomo-o Terawasa, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  64. Step unbunching phenomenon of the SiC surface International conference

    Wataru Norimatsu, Keisuke Yuhara, Jianfeng Bao, Tomo-o Terasawa, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  65. Characterization of Ni intercalated graphene film on SiC (0001) International conference

    Yutaro Ouchi, Wataru Norimatsu, Takahiro Ito, Ryoji Funahashi, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  66. Characterization of boron doped graphene derived from epitaxial B4C thin film on SiC substrate International conference

    Nao Takata, Wataru Norimatsu, Takahiro Ito, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  67. Fabrication of SiC/B4C nano-composite film and subsequent graphitization International conference

    Keita Matsuda, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  68. Toward mobility improvement of epitaxial graphene International conference

    Ryotaro Sakakibara, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  69. Epitaxial Al4C3 growth on SiC substrate and subsequent graphenization International conference

    Keita Matsuda, Mai Fukui, Wataru Norimatsu, Tomo-o Terasawa, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  70. Relation between thermal resistance and deformation of vertically aligned carbon nanotubes on SiC International conference

    Yosuke Tsukiyama, Wataru Hoshino, Yusaku Nakamura, Isami Nitta, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  71. Effect of oxygen gas on diameter of carbon nanotubes formed by SiC surface decomposition International conference

    Yuka Matsuyama, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  72. Synthesis of epitaxial graphene quantum dots along periodic steps of SiC International conference

    Michiko Kusunoki, Satsuki Nakano, Yota Harada, Wataru Norimatsu, and Y. Nishikawa

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  73. Low-temperature magnetotransport of inhomogeneous epitaxial graphene grown on SiC International conference

    Akira Endo, Shingo Katsumoto, Jianfeng Bao, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  74. Time-resolved photoluminescence from epitaxial and transferred monolayer graphene on SiC substrate International conference

    Hirotaka Imaeda, Takeshi Koyama, Hideo Kishida, Kenji Kawahara, Hiroki Ago, Jianfeng Bao, Tomo-o Terasawa, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  75. Angle-resolved photoemission study of p-doped graphene with Cu-intercalation International conference

    Takahiro Ito, Kouki Yamamoto, Masato Imai, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  76. Effect of impurities in Ar gas on growth of epitaxial graphene International conference

    Tomo-o Terasawa, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Epitaxial Graphene 2017 (ISEG-2017) 

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    Event date: 2017.11.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  77. Effect of gas phase conditions on growth of epitaxial graphene International conference

    Tomo-o Terasawa, Wataru Norimatsu, and Michiko Kusunoki

    Graphene Week 2017 

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    Event date: 2017.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  78. Graphene growth by thermal decomposition of Al4C3 on SiC International conference

    Wataru Norimatsu, Mai Fukui, Keita Matsuda, Tomo-o Terasawa, and Michiko Kusunoki

    Graphene Week 2017 

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    Event date: 2017.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  79. Nano-graphene formation by thermal decomposition of sea-island structured SiC/B4C nano-composite International conference

    Keita Matsuda, Wataru Norimatsu, and Michiko Kusunoki

    Graphene Week 2017 

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    Event date: 2017.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  80. SiC(0001)上グラフェンにおけるNiインターカレーション

    大内勇太郎、乗松航、伊藤孝寛、舟橋良次、楠美智子

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  81. SiC熱分解によるグラフェン成長における不純物の影響

    寺澤知潮、乗松航、楠美智子

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  82. B4C薄膜の熱分解によるホウ素ドープグラフェンの作製

    高田奈央、乗松航、伊藤孝寛、楠美智子

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  83. SiCステップ上グラフェン量子ドットのプラズモン発光現象

    原田頌太、中野さつき、乗松航、西川洋太、河野行雄、楠美智子

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  84. SiC上単層グラフェンの時間分解発光

    今枝寛雄、小山剛史、岸田英生、包建峰、乗松航、楠美智子

    第72回日本物理学会年会 

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    Event date: 2017.3.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学豊中キャンパス   Country:Japan  

  85. SiC表面分解によるグラフェン成長のAr流量による制御

    寺澤知潮、乗松航、楠美智子

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  86. 海島構造をもつSiC/B4Cナノコンポジット膜の作製とそのナノグラフェン化

    松田敬太、乗松航、楠美智子

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  87. 銅インターカレート処理したSiC(0001)上グラフェンの角度分解光電子分光

    山本功樹、伊藤孝寛、今井雅人、乗松航、楠美智子

    第30回日本放射光学会年会 

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    Event date: 2017.1.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸芸術センター   Country:Japan  

  88. SiC上へのAl4C3薄膜の作製とグラフェン化

    福井舞、乗松航、楠美智子

    第16回表面科学会中部支部学術講演会 

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    Event date: 2016.12.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  89. 炭化アルミニウムの熱分解によるアルミニウムドープグラフェンの作製

    福井舞、乗松航、楠美智子

    第36回表面科学学術講演会 

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    Event date: 2016.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  90. SiC上グラフェン量子ドットの作製と特性評価

    中野さつき、乗松航、楠美智子

    第36回表面科学学術講演会 

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    Event date: 2016.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  91. パルスレーザー堆積法による大面積TiC薄膜のグラフェン化

    鶴田遥香、乗松航、楠美智子

    第36回表面科学学術講演会 

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    Event date: 2016.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  92. SiC粉末の表面分会によるCNT合成

    横山理徳、乗松航、楠美智子

    第36回表面科学学術講演会 

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    Event date: 2016.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  93. Carrier-type control of close-packed carbon nanotube film on SiC International conference

    Wataru Norimatsu, Keita Matsuda, and Michiko Kusunoki

    The International Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation (Visual-JW 2016) 

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    Event date: 2016.10.17

    Language:English   Presentation type:Poster presentation  

    Venue:Hotel Hankyu Expo Park, Osaka   Country:Japan  

  94. SiC上高濃度ホウ素ドープグラフェンの物性

    乗松航、増森淳史、舟橋良次、遠藤彰、楠美智子

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  95. パルスレーザー堆積法による大面積TiC薄膜の作製とそのグラフェン化

    鶴田遥香、乗松航、楠美智子

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  96. バッファー層急冷グラフェンの電子状態と物性

    乗松航、包建峰、山本功樹、伊藤孝寛、舟橋良次、楠美智子

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  97. Negative-thermal-expansion-induced graphenization of buffer layer on SiC International conference

    Wataru Norimatsu, Jianfeng Bao, Takahiro Ito, and Michiko Kusunoki

    5th International Symposium on Graphene Devices (ISGD-5) 

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    Event date: 2016.7.11 - 2016.7.14

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Brisbane, Australia   Country:Australia  

  98. Negative-thermal-expansion-induced graphenization of buffer layer on SiC International conference

    Wataru Norimatsu, Jianfeng Bao, Takahiro Ito, and Michiko Kusunoki

    Graphene Week 2016 

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    Event date: 2016.6.12 - 2016.6.17

    Language:English   Presentation type:Poster presentation  

    Venue:Warsaw, Poland   Country:Poland  

  99. SiC基板上高密度CNT配向膜における電気伝導機構の解明

    松田敬太、乗松航、楠美智子

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大   Country:Japan  

  100. SiC上均質グラフェンの特性と今後の展望

    楠美智子、乗松航

    Nano Tech 2016 

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    Event date: 2016.1.28

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  101. 負の熱膨張率を利用したSiC基板上フリースタンディンググラフェンの形成

    包建峰、乗松航、楠美智子

    第15回日本表面科学会中部支部学術講演会 

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    Event date: 2015.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  102. SiC(000-1)上B4C薄膜の熱分解によるホウ素ドープグラフェンの創製

    増森淳史、乗松航、楠美智子

    第15回日本表面科学会中部支部学術講演会 

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    Event date: 2015.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  103. SiC上へのB4C薄膜の形成と特性評価

    増森淳史、乗松航、楠美智子

    平成27年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2015.12.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  104. TiC/SiC単結晶の表面分解によるグラフェンの作製と観察

    宮本玄生、乗松航、楠美智子

    平成27年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2015.12.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  105. SiC上CNT配向膜の伝導特性

    松田敬太、乗松航、楠美智子

    平成27年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2015.12.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  106. Novel interface modification in epitaxial graphene on SiC International conference

    Michiko Kusunoki and Wataru Norimatsu

    EMN Hong Kong Meeting 2015 

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    Event date: 2015.12.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  107. Electrical Transport Properties of Close-Packed and Well-aligned Carbon Nanotube Films Depending on Length International conference

    Keita Matsuda, Wataru Norimatsu and Michiko Kusunoki

    2nd International Symposium on Frontiers in Materials Science 

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    Event date: 2015.11.20

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  108. SiC(000-1)上B4C薄膜の熱分解によるホウ素ドープグラフェンの創製

    増森淳史、乗松航、楠美智子

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  109. 銅インターカレーションしたSiC(0001)上グラフェンのTEM観察

    今井雅人、乗松航、楠美智子

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  110. SiC上グラフェン量子ドットの作製と特性評価

    中野さつき、乗松航、楠美智子

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  111. SiC 上カーボンナノチューブフォレストのメタルフリーCVD 成長におけるCNT 端面の調査

    平野優、稲葉優文、鈴木和真、費文茜、乗松航、楠美智子、川原田洋

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  112. カーボンナノチューブ間の接触抵抗

    稲葉優文、李智宇、鈴木和真、平野優、費文茜、乗松航、楠美智子、川原田洋

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  113. Novel Interface Structure of Epitaxial Graphene on SiC International conference

    M. Kusunoki and W. Norimatsu

    EMN Hong Kong Meeting 2015 

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    Event date: 2015.9.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  114. Novel Interface modification in epitaxial graphene on SiC International conference

    Michiko Kusunoki and Wataru Norimatsu

    The 8th Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp.-Hokkaido Univ.- XinJiang Normal Univ.(NTTHX) Joint Symposium 

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    Event date: 2015.8.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  115. Electronic properties of the closely-packed aligned carbon nanotube film International conference

    Wataru Norimatsu, Hayato Fujita, Koji Oda, and Michiko Kusunoki

    The Sixteenth International Conference on the Science and Application of Nanotubes (NT16) 

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    Event date: 2015.6.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  116. Creation of Boron-Doped Graphene by thermal decomposition of B4C International conference

    Atsushi Masumori, Wataru Norimatsu, and Michiko Kusunoki

    The Sixteenth International Conference on the Science and Application of Nanotubes (NT16) 

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    Event date: 2015.6.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  117. Quasi-free-standing graphene formation on SiC (0001) by the post-growth rapid-cooling International conference

    Jianfeng Bao, Wataru Norimatsu, and Michiko Kusunoki

    The Sixteenth International Conference on the Science and Application of Nanotubes (NT16) 

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    Event date: 2015.6.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  118. Intercalation of copper atoms under graphene film on SiC (0001) International conference

    Masato Imai, Wataru Norimatsu, and Michiko Kusunoki

    The Sixteenth International Conference on the Science and Application of Nanotubes (NT16) 

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    Event date: 2015.6.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  119. Interface modifications in epitaxial graphene on SiC (0001) International conference

    Yoshiho Masuda, Wataru Norimatsu, and Michiko Kusunoki

    The Sixteenth International Conference on the Science and Application of Nanotubes (NT16) 

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    Event date: 2015.6.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  120. TEM observation of copper intercalation in graphene on SiC (0001) International conference

    Masato Imai, Wataru Norimatsu, and Michiko Kusunoki

    Graphene Week 2015 

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    Event date: 2015.6.24

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  121. Buffer-layer-free graphene on SiC (0001) by rapid cooling International conference

    Jianfeng Bao, Wataru Norimatsu, and Michiko Kusunoki

    Graphene Week 2015 

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    Event date: 2015.6.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  122. Interplay between step-bunching and graphene growth on 6H-SiC (0001) International conference

    Wataru Norimatsu, Osamu Yasui, Jianfeng Bao, and Michiko Kusunoki

    Graphene Week 2015 

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    Event date: 2015.6.22

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  123. SiC上の高均質グラフェン・ナノチューブ膜の可能性

    楠美智子、乗松航

    第19回液晶化学研究会シンポジウム 

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    Event date: 2015.5.15

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  124. ホウ素ドープ最密充填カーボンナノチューブ膜の電気伝導測定

    乗松航、小田晃司、藤田隼人、楠美智子

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  125. 無触媒CVD成長したカーボンナノチューブの評価

    平野優、稲葉優文、渋谷恵、鈴木和真、李智宇、明道三穂、平岩篤、乗松航、楠美智子、川原田洋

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  126. 急冷法によるSiC(0001)上バッファ層フリーグラフェンの作製

    包建峰、乗松航、楠美智子

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  127. SiCグラフェン成長とステップバンチングの関係

    安井理、乗松航、楠美智子

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. SiC上のカーボンナノチューブのパターニング形成のための耐超高温ZnO/Cマスク

    稲葉優文、李智宇、鈴木和真、渋谷恵、明道三穂、平野優、乗松航、楠美智子、川原田洋

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  129. SiC(0001)基板の様々なステップ高さにおけるグラフェン形成メカニズム

    安井理、乗松航、楠美智子

    第53回セラミックス基礎科学討論会 

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    Event date: 2015.1.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  130. SiC初期酸化膜の周期構造とそのグラフェン化

    宮田将大、乗松航、楠美智子

    第53回セラミックス基礎科学討論会 

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    Event date: 2015.1.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  131. グラフェン成長におけるSiC基板のステップ方位及びoff角依存性

    柚原敬介、乗松航、楠美智子

    第14回日本表面科学会中部支部学術講演会 

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    Event date: 2014.12.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  132. SiC初期酸化膜の周期制御とそのグラフェン化に与える影響

    宮田将大、乗松航、楠美智子

    第14回日本表面科学会中部支部学術講演会 

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    Event date: 2014.12.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. SiC(0001)面上エピタキシャルグラフェンの形状評価と電気特性

    内山貴文、乗松航、楠美智子

    平成26年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2014.12.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  134. 熱分解グラフェン成長におけるSiC基板off角依存性

    柚原敬介、乗松航、楠美智子

    平成26年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2014.12.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  135. Nitrogen induced modification of interface in epitaxial graphene on SiC International conference

    Wataru Norimatsu, Yoshiho Masuda and Michiko Kusunoki

    International Symposium on Graphene Devices 2014 

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    Event date: 2014.9.22

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  136. SiC上のカーボンナノチューブを下地としたカーボンナノチューブフォレストのクローニング成長

    平野優、稲葉優文、渋谷恵、鈴木和真、李智宇、明道三穂、平岩篤、乗松航、楠美智子、川原田洋

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  137. SiC上に形成した稠密カーボンナノチューブフォレストの面内方向伝導性評価

    稲葉優文、李智宇、鈴木和真、渋谷恵、明道三穂、平野優、平岩篤、乗松航、楠美智子、川原田洋

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  138. SiC (000-1)上B4C薄膜のエピタキシャル成長

    増森淳史、乗松航、楠美智子

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.18

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  139. グラフェンナノパターニングに向けたSiC初期酸化膜の周期構造

    宮田将大、乗松航、楠美智子

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.18

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  140. TiCマスクをしたSiC基板の表面分解によるグラフェン形成

    宮本玄生、乗松航、楠美智子

    第47回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.9.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  141. Nitrogen-induced interface improvement in epitaxial graphene on SiC

    乗松航、増田佳穂、楠美智子

    第47回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.9.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  142. Electronic and structural properties of B-doped carbon-nanotube film on SiC

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    Event date: 2014.9.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  143. SiC上カーボンナノチューブフォレスト向け高温マスクパターニング

    稲葉優文、李智宇、鈴木和真、渋谷恵、平野優、明道三穂、平岩篤、乗松航、楠美智子、川原田洋

    第47回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.9.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  144. トップコンタクト電極を用いたCNT/SiC界面の接触抵抗及びSchottky障壁高さの評価

    鈴木和真、稲葉優文、李智宇、鈴木和真、渋谷恵、平野優、明道三穂、平岩篤、乗松航、楠美智子、川原田洋

    第47回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.9.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  145. SiC上グラフェンへの銅インターカレーション

    今井雅人、乗松航、楠美智子

    第47回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.9.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  146. Homogeneous graphene growth on SiC (000-1) International conference

    Wataru Norimatsu, Honami Ohara and Michiko Kusunoki

    IUMRS-ICA 2014 

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    Event date: 2014.8.26

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  147. Interface modification by nitrogen in epitaxial graphene on SiC International conference

    Wataru Norimatsu, Yoshiho Masuda and Michiko Kusunoki

    IUMRS-ICA 2014 

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    Event date: 2014.8.25

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  148. Interface improvement by nitrogen in epitaxial graphene on SiC International conference

    Wataru Norimatsu, Yoshiho Masuda and Michiko Kusunoki

    7th NTTH Symposium 

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    Event date: 2014.7.22

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  149. Interface modification by nitrogen in epitaxial graphene on SiC International conference

    Wataru Norimatsu, Yoshiho Masuda and Michiko Kusunoki

    Graphene Week 2014 

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    Event date: 2014.6.25

    Language:English   Presentation type:Poster presentation  

    Country:Sweden  

  150. SiC表面上グラフェンの窒素処理による界面構造改質

    乗松航、増田佳穂、楠美智子

    日本顕微鏡学会第70回記念学術講演会 

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    Event date: 2014.5.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  151. トップコンタクト電極を用いたCNT/SiC界面の接触抵抗及びSchottky障壁高さの評価

    鈴木和真、稲葉優文、渋谷恵、李智宇、明道三穂、平岩篤、増田佳穂、乗松航、楠美智子、川原田洋

    応用物理学会第61回春季学術講演会 

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    Event date: 2014.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  152. 高配向・高密度カーボンナノチューブへのカルボラン内包

    藤田隼、乗松航、楠美智子

    応用物理学会第61回春季学術講演会 

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    Event date: 2014.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  153. 半絶縁性シリコンカーバイド上の高密度カーボンナノチューブフォレストの面内電導

    稲葉優文、李智宇、鈴木和真、平岩篤、増田佳穂、乗松航、楠美智子、川原田洋

    第46回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  154. 窒素雰囲気下で形成されるグラフェン/SiCの界面構造

    増田佳穂、乗松航、楠美智子

    第46回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  155. カーボンナノチューブ/シリコンカーバイド界面の接触抵抗及びSchottky障壁高さの評価

    鈴木和真、李智宇、稲葉優文、平岩篤、増田佳穂、乗松航、楠美智子、川原田洋

    第46回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  156. 高配向・高密度カーボンナノチューブ膜へのカルボラン内包

    藤田隼、乗松航、楠美智子

    第46回フラーレン・ナノチューブ・グラフェン学会総合シンポジウム 

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    Event date: 2014.3.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  157. 高配向・高密度カーボンナノチューブ膜へのカルボラン内包とその評価

    藤田隼、乗松航、楠美智子

    第13回日本表面科学会中部支部学術講演会 

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    Event date: 2013.12.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  158. SiC(000-1)C面を用いた均一な大面積グラフェンの作製

    大原穂波、乗松航、楠美智子

    平成25年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2013.12.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  159. 高配向・高密度カーボンナノチューブへのカルボラン内包とその評価

    藤田隼、乗松航、楠美智子

    平成25年度日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2013.12.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  160. Structures and Transport Properties of Zigzag-Type CNT Films Doped by Si International conference

    Michiko Kusunoki, Naoya Tomatsu, Wataru Norimatsu, Koichi Takase

    2013 MRS Fall Meeting 

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    Event date: 2013.12.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  161. Graphene growth from solid-state amorphous carbon on various substrates International conference

    Fumitaka Asai, Wataru Norimatsu, and Michiko Kusunoki

    3rd CAMPUS Asia Symposium on Chemistry and Materials 

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    Event date: 2013.11.7

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  162. 高濃度ドープによるCNT/SiC界面の接触抵抗の低減

    鈴木和真、稲葉優文、渋谷恵、明道三穂、平岩篤、増田佳穂、乗松航、楠美智子、川原田洋

    応用物理学会第74回学術講演会 

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    Event date: 2013.9.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  163. 窒素ガス雰囲気下におけるSiC上グラフェン形成とその界面構造

    増田佳穂、乗松航、楠美智子

    応用物理学会第74回学術講演会 

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    Event date: 2013.9.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  164. SiC(000-1)上グラフェンのTEMによる面内構造解析

    乗松航、黒木淳、楠美智子

    応用物理学会第74回学術講演会 

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    Event date: 2013.9.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  165. Homogeneous graphene on SiC (000-1) formed via an epitaxial TiC layer International conference

    K. Kimura, K. Shoji, W. Norimatsu, and Michiko Kusunoki

    5th International Conference on Recent Progress in Graphene Research 2013 

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    Event date: 2013.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  166. In-plane structural features of graphene on SiC revealed by TEM observations International conference

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki

    20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-10) 

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    Event date: 2013.7.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  167. Growth of boron-doped graphene by thermal decomposition of B4C International conference

    Wataru Norimatsu, K. Hirata and Michiko Kusunoki

    20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-10) 

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    Event date: 2013.7.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  168. In-plane structural properties of graphene on SiC revealed by TEM observations International conference

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki

    Graphene Week 2013 

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    Event date: 2013.6.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  169. High quality graphene growth on SiC (000-1) via an epitaxial TiC layer International conference

    Wataru Norimatsu, K. Shoji, K. Kimura and Michiko Kusunoki

    Graphene Week 2013 

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    Event date: 2013.6.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  170. SiC(000-1)表面上グラフェンの成長機構解明

    乗松航、楠美智子

    第3回6大学6研究所連携プロジェクト公開討論会 

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    Event date: 2013.3.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  171. 窒素ガスがSiC上エピタキシャルグラフェン形成に及ぼす影響

    増田佳穂、乗松航、楠美智子

    日本表面科学会中部支部第12回学術講演会 

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    Event date: 2012.12.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  172. 窒素ガスがSiC表面分解反応に及ぼす影響

    増田佳穂、乗松航、楠美智子

    日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2012.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  173. TEM観察によるSiC表面分解グラフェンの面内構造解析

    黒木淳、乗松航、楠美智子

    日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2012.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  174. SiC(000-1)C面上における均一な大面積グラフェンの作製

    大原穂波、乗松航、楠美智子

    日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2012.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  175. Homogeneous Graphene Growth on SiC (0001) with Step-height Lower Than 1 nm International conference

    Wataru Norimatsu, and Michiko Kusunoki

    3rd International Symposium on Graphene Devices (ISGD-2012) 

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    Event date: 2012.11.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  176. In-plane Structural Analysis of Graphene Layers on SiC by TEM Observation International conference

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki

    The 5th International Symposium on Designing, Processing, and Properties of Advanced Engineering Materials and The 3rd International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (ISAEM-2012 and AMDI-3) 

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    Event date: 2012.11.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  177. Growth of boron doped graphene by thermal decomposition of boron carbide International conference

    Wataru Norimatsu, Koichiro Hirata, and Michiko Kusunoki

    3rd International Symposium on Graphene Devices (ISGD-2012) 

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    Event date: 2012.11.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  178. Early stage of CNT formation by surface decomposition of SiC revealed by DFTB/MD simulations International conference

    Noriyuki Ogasawara, Wataru Norimatsu, Michiko Kusunoki, and S. Irle

    The 5th International Symposium on Designing, Processing, and Properties of Advanced Engineering Materials and The 3rd International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (ISAEM-2012 and AMDI-3) 

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    Event date: 2012.11.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  179. Formation Mechanism of CNTs by Surface Decomposition of SiC Revealed by DFTB/MD Simulations International conference

    Noriyuki Ogasawara, Wataru Norimatsu, and Michiko Kusunoki, Stephan Irle

    IUMRS-ICEM 2012 

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    Event date: 2012.9.26

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  180. SiC surface decomposition in the N2 atmosphere International conference

    Yoshiho Masuda, Wataru Norimatsu, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  181. In-plane Structural Analysis of Graphene Layers on SiC (0001) and (000-1) International conference

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  182. Growth of graphene on C-face (000-1) of SiC with the controlled number of layers in large area International conference

    Honami Ohara, Wataru Norimatsu, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  183. Interaction of metal nano-particles with graphene on SiC International conference

    Tomohiro Sakashita, Wataru Norimatsu, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.25

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  184. Epitaxial growth of graphene on various carbides International conference

    Wataru Norimatsu, Koichiro Hirata, Keisuke Kimura, and Michiko Kusunoki

    IUMRS-ICEM 2012 

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    Event date: 2012.9.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  185. 窒素ガス雰囲気下におけるSiC表面分解反応

    増田佳穂、乗松航、楠美智子

    日本セラミックス協会第25回秋季シンポジウム 

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    Event date: 2012.9.19

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  186. 金属ナノ粒子とSiC上グラフェンの相互作用

    坂下智啓、乗松航、楠美智子

    日本セラミックス協会第25回秋季シンポジウム 

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    Event date: 2012.9.19

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  187. デバイス応用に適したSiC(0001)表面上グラフェン成長条件の探索

    乗松航、楠美智子

    応用物理学会第73回学術講演会 

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    Event date: 2012.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  188. DFTB/MDシミュレーションによるSiC表面分解グラフェンの成長機構解析

    小笠原徳之、乗松航、楠美智子、Stephan Irle

    応用物理学会第73回学術講演会 

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    Event date: 2012.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  189. 層数制御された大面積SiC(000-1)C面上グラフェンの作製

    大原穂波、乗松航、楠美智子

    応用物理学会第73回学術講演会 

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    Event date: 2012.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  190. Epitaxial growth of boron-doped graphene by thermal decomposition of B4C International conference

    Wataru Norimatsu, Koichiro Hirata, Yuta Yamamoto, Shigeo Arai, and Michiko Kusunoki

    Graphene Week 2012 

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    Event date: 2012.6.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  191. SiC表面上カーボンナノチューブ配向膜へのボロンドープ

    乗松航、小田晃司、山本悠太、荒井重勇、楠美智子

    日本顕微鏡学会第68回学術講演会 

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    Event date: 2012.5.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  192. 炭化ホウ素の熱分解によるグラフェン成長とその特徴

    乗松航、平田浩一郎、山本悠太、荒井重勇、楠美智子

    日本顕微鏡学会第68回学術講演会 

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    Event date: 2012.5.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  193. 高配向カーボンナノチューブ膜の真実接触面観察

    月山陽介、小島傑、新田勇、乗松航、楠美智子

    トライボロジー会議2012春 

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    Event date: 2012.5.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  194. Crystallographic features of boron-doped graphene grown by thermal decomposition of B4C International conference

    Wataru Norimatsu, Koichiro Hirata, and Michiko Kusunoki

    The 3rd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC3) 

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    Event date: 2012.5.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  195. Stacking structures of graphene layers on SiC (0001) and (000-1) International conference

    Jun Kuroki, Wataru Norimatsu, and Michiko Kusunoki,

    The 3rd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC3) 

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    Event date: 2012.5.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  196. B4Cの熱分解によるグラフェン成長とその特徴

    乗松航、平田浩一郎、楠美智子

    日本物理学会第67回年次大会 

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    Event date: 2012.3.24

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  197. SiC上カーボンナノチューブ配向膜へのホウ素ドープ

    小田晃司、乗松航、楠美智子

    第59回応用物理学関係連合講演会 

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    Event date: 2012.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  198. SiC表面分解法による数層グラフェンの面内構造解析

    黒木淳、乗松航、楠美智子

    第59回応用物理学関係連合講演会 

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    Event date: 2012.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  199. n型Mn3Si4Al3系材料の熱電特性と元素置換効果

    舟橋良次、松村葉子、田中秀明、竹内友成、鈴木亮輔、王一峰、乗松航、河本邦人

    第59回応用物理学関係連合講演会 

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    Event date: 2012.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  200. Structural features of graphene layers on SiC (000-1) revealed by transmission electron microscopy International conference

    Wataru Norimatsu, Juji Takada, and Michiko Kusunoki

    International Symposium on Role of Electron Microscopy in Industry 

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    Event date: 2012.1.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  201. TEM Observations of B-doped Well-aligned Carbon Nanotube Films on SiC Substrate International conference

    Koji Oda, Wataru Norimatsu, and Michiko Kusunoki

    International Symposium on Role of Electron Microscopy in Industry 

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    Event date: 2012.1.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  202. Diameter control of carbon nanotubes synthesized by SiC surface decomposition International conference

    Naoya Toumatsu, Wataru Norimatsu, Michiko Kusunoki

    Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp.-Hokkaido Univ.-Univ. Electron. Sci. Tech. China Joint Symposium (NTTH2011) 

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    Event date: 2011.12.22

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  203. First Principles Calculations of Close-packed and Doped Carbon Nanotubes International conference

    Noriyuki Ogasawara, Wataru Norimatsu, Michiko Kusunoki

    The 6th International Symposium on Surface Science (ISSS-6) 

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    Event date: 2011.12.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  204. Plan-view of Few Layer Graphene on 6H-SiC by Transmission Electron Microscopy International conference

    Jun Kuroki, Wataru Norimatsu, Michiko Kusunoki

    The 6th International Symposium on Surface Science (ISSS-6) 

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    Event date: 2011.12.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  205. Atomistic mechanism of graphene formation as predicted by nonequilibrium quantum chemical molecular dynamics simulations International conference

    Stephan Irle, Ying Wang, Yoshio Nishimoto, Hu-Jun Qian, Masato Morita, Wataru Norimatsu, Michiko Kusunoki, Alister J. Page, Keiji Morokuma

    International Symposium on EcoTopia Science 2011 (ISETS `11) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  206. Patterning of Aligned CNT Films using SiO2 Particles Monolayer as a Mask International conference

    Keita Matsuda, Wataru Norimatsu, Michiko Kusunoki

    The 6th International Symposium on Surface Science (ISSS-6) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  207. Observations of Platinum Nanoparticles Supported on Well-aligned CNT Films at High Temperatures International conference

    Keita Matsuda, Wataru Norimatsu, Michiko Kusunoki

    International Symposium on EcoTopia Science 2011 (ISETS `11) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  208. TEM Observations of B-doped Well-aligned Carbon Nanotube Films on SiC Substrate International conference

    Koji Oda, Wataru Norimatsu, Michiko Kusunoki

    International Symposium on EcoTopia Science 2011 (ISETS `11) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  209. The size effect and the shape effect of ferroelectric domain structures in BaTiO3 International conference

    Koichi Morita, Wataru Norimatsu, Michiko Kusunoki

    International Symposium on EcoTopia Science 2011 (ISETS `11) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  210. Diameter control of carbon nanotubes synthesized by SiC surface decomposition International conference

    Naoya Toumatsu, Wataru Norimatsu, Michiko Kusunoki

    International Symposium on EcoTopia Science 2011 (ISETS `11) 

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    Event date: 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  211. Doping of Boron into Well-aligned Carbon Nanotube Films on SiC Substrate International conference

    Koji Oda, Wataru Norimatsu, and Michiko Kusunoki

    15th International Conference on Thin Films (ICTF-15) 

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    Event date: 2011.11.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  212. Features of epitaxial graphene on silicon carbide {0001} International conference

    Wataru Norimatsu, and Michiko Kusunoki

    15th International Conference on Thin Films (ICTF-15) 

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    Event date: 2011.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  213. Nanocarbon thin films grown on silicon carbide International conference

    Wataru Norimatsu, and Michiko Kusunoki

    15th International Conference on Thin Films (ICTF-15) 

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    Event date: 2011.11.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  214. Epitaxial graphene produced by thermal decomposition of TiC International conference

    Wataru Norimatsu, Keisuke Kimura, and Michiko Kusunoki

    2011 International Conference on Solid State Devices and Materials (SSDM 2011) 

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    Event date: 2011.9.29

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  215. SiC(0001)表面グラフェン形成の分子動力学シミュレーション

    乗松航、盛田壮登、楠美智子、Irle Stephan

    日本物理学会 2011年秋季大会 

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    Event date: 2011.9.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  216. 放射光X 線吸収分光によるSi ドープカーボンナノチューブの化学結合状態分析

    泉雄大,室隆桂之,木下豊彦,乗松航,楠美智子,渡辺義夫

    応用物理学会 第72回応用物理学会学術講演会 

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    Event date: 2011.9.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  217. SiC(000-1)表面上グラフェンの形成機構

    乗松航、高田重治、楠美智子

    応用物理学会 第72回応用物理学会学術講演会 

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    Event date: 2011.9.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  218. SiC上グラフェンの成長と構造選択性

    楠美智子、乗松航

    応用物理学会 第72回応用物理学会学術講演会 

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    Event date: 2011.8.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  219. Influence of Alkaline Earth Substitution on The Thermoelectric Properties of (BiS)1.2(TiS2)2 Misfit Layered Sulfides

    Yulia Eka Putri, Chunlei Wan, Yifeng Wang, Wataru Norimatsu, Kunihito Koumoto

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    Event date: 2011.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  220. Features of graphene layers on SiC (0001) International conference

    Wataru Norimatsu, and Michiko Kusunoki

    2nd International Conference on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (STAC5-AMDI2) 

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    Event date: 2011.6.22

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  221. Tribological Properties of Vertically-Aligned Carbon Nano-Tube with Perfluoro-polyether Lubricant International conference

    H. Tani, K. Konishi, W. Norimatsu, M. Kusunoki, and N. Tagawa

    3rd European Conference on Tribology (ECOTRIB 2011) 

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    Event date: 2011.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  222. 白金担持カーボンナノチューブ膜の酸素ガス中高温その場観察

    乗松航、松田敬太、浅井文崇、荒井重勇、楠美智子

    日本顕微鏡学会 第67回学術講演会 

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    Event date: 2011.5.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  223. Features of graphene on SiC (000-1) revealed by transmission electron microscopy International conference

    Wataru Norimatsu, and Michiko Kusunoki

    Graphene 2011 

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    Event date: 2011.4.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  224. SiC(0001)表面上グラフェン形成の分子動力学シミュレーション

    乗松航、盛田壮登、楠美智子、Stephan Irle

    応用物理学会 第58回応用物理学関係連合講演会 

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    Event date: 2011.3.26

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  225. SiC(0001)表面上グラフェンの結晶学的特徴

    乗松航、楠美智子

    第40回フラーレン・ナノチューブ総合シンポジウム 

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    Event date: 2011.3.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名城大学   Country:Japan  

  226. カーボンナノチューブ

    楠美智子、乗松航

    日本セラミックス協会東海支部講演会 

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    Event date: 2011.2.18

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:JFCC   Country:Japan  

  227. SiC上高密度CNT配向膜のパターニング

    松田敬太、乗松航、楠美智子

    日本セラミックス協会 第49回セラミックス基礎科学討論会 

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    Event date: 2011.1.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山コンベンションセンター   Country:Japan  

  228. カーボンナノチューブ/SiC複合材料の放熱材料への応用

    大森恒、乗松航、楠美智子、番場達也、南谷靖、市川琢也

    日本セラミックス協会東海支部 平成22年度学術研究発表会 

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    Event date: 2010.12.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名城大学   Country:Japan  

  229. SiC表面分解法におけるカーボンナノチューブの直径制御

    東松直哉、吉川奈保子、乗松航、楠美智子

    日本表面科学会中部支部 第10回学術講演会 

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    Event date: 2010.12.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  230. QM/MDシミュレーションによるSiCステップ表面におけるグラフェン各形成過程の解明

    盛田壮登、乗松航、楠美智子、Stephan Irle

    日本表面科学会中部支部 第10回学術講演会 

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    Event date: 2010.12.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  231. 球状酸化物粒子を用いたCNT配向膜のパターニング

    松田敬太、乗松航、楠美智子

    日本セラミックス協会東海支部 平成22年度学術研究発表会 

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    Event date: 2010.12.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名城大学   Country:Japan  

  232. SiC表面分解からの高密度ナノカーボンの直接合成とその応用

    楠美智子、乗松航

    第19回ポリマー材料フォーラム 

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    Event date: 2010.12.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

  233. Structure Control of Carbon Nanotube Films and Graphene on SiC International conference

    Michiko Kusunoki, and Wataru Norimatsu

    2010 Materials Research Society Fall Meeting 

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    Event date: 2010.12.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  234. Nano-Carbon Structures on SiC International conference

    Wataru Norimatsu, and Michiko Kusunoki

    The International Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation (Visual JW2010) 

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    Event date: 2010.11.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  235. グラフェン/SiCの結晶成長と構造評価

    楠美智子、乗松航

    (財)科学技術戦略推進機構 

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    Event date: 2010.10.14

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:JCII戦略推進部   Country:Japan  

  236. SiC表面分解によるCNT/グラフェンの構造制御

    楠美智子、乗松航

    第4回CPC研究会講演会 

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    Event date: 2010.10.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:新御茶ノ水総評会館   Country:Japan  

  237. SiCからのCNT/グラフェンの合成と電子顕微鏡による構造評価

    楠美智子、乗松航

    電子情報技術産業協会JEITA「ナノカーボンエレクトロニクス技術分科会」 

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    Event date: 2010.9.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:福岡   Country:Japan  

  238. Siドープカーボンナノチューブ配向膜の電気的および結晶学的特徴

    乗松航、丸山雄大、笹井亮、高瀬浩一、楠美智子

    日本物理学会 2010年秋季大会 

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    Event date: 2010.9.23

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪府立大学   Country:Japan  

  239. SiC表面分解によるナノチューブ・グラフェンの合成と評価

    楠美智子、乗松航

    科学技術交流会ナノ粒子研究会 

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    Event date: 2010.9.22

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名大シンポジオンホール   Country:Japan  

  240. Siを注入したCNT配向膜/SiCの硬X線光電子分光法による化学状態分析

    町田雅武、孫珍永、陰地宏、広沢一郎、丸山雄大、乗松航、楠美智子、渡辺義夫

    応用物理学会 第71回学術講演会 

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    Event date: 2010.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  241. Formation of ABC-stacked graphene layers on SiC (0001) International conference

    Wataru Norimatsu, and Michiko Kusunoki

    2nd International Symposium on the Science and Technology of Epitaxial Graphene (STEG2) 

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    Event date: 2010.9.15

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  242. SiC-C面上グラフェン膜の作製と透過型電子顕微鏡観察

    高田重治、乗松航、楠美智子

    応用物理学会 第71回学術講演会 

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    Event date: 2010.9.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  243. SiC表面分解法により作製した配向性カーボンナノチューブの直径制御

    乗松航、吉川奈保子、楠美智子

    日本顕微鏡学会 第66回学術講演会 

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    Event date: 2010.5.25

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  244. SiC(0001)表面上グラフェンの結晶学的特徴

    乗松航、楠美智子

    日本顕微鏡学会 第66回学術講演会 

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    Event date: 2010.5.25

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  245. 垂直高配向カーボンナノチューブのバーニッシュヘッドへの応用

    小西圭祐、谷弘詞、楠美智子、乗松航、多川則男

    トライボロジー会議 2010春 東京 

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    Event date: 2010.5.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立オリンピック記念青少年総合センター   Country:Japan  

  246. Formation mechanism of graphene on SiC (0001) International conference

    Graphene Week 2010 

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    Event date: 2010.4.21

    Language:English   Presentation type:Poster presentation  

  247. SiC上グラフェンの結晶学的特徴

    乗松航、楠美智子

    日本物理学会 第65回年次大会 

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    Event date: 2010.3.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  248. SiドープCNT配向膜の電気特性評価と高分解能TEMによる構造解析

    丸山雄大、乗松航、楠美智子

    応用物理学会 第57回関係連合講演会 

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    Event date: 2010.3.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  249. SiC表面分解法により作製したグラフェンの結晶学的特徴

    乗松航、楠美智子

    応用物理学会 第57回関係連合講演会 

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    Event date: 2010.3.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  250. High Thermal Conductivity of Carbon Nanotube and SiC Composites Synthesized by Surface Decomposition International conference

    34th International Conference and Exposition on Advanced Ceramics and Composites 

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    Event date: 2010.1.26

    Language:English   Presentation type:Poster presentation  

  251. Application of Carbon Nanotube and SiC composites for a thermal interface material International conference

    34th International Conference and Exposition on Advanced Ceramics and Composites 

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    Event date: 2010.1.25

    Language:English   Presentation type:Oral presentation (invited, special)  

  252. TiC表面分解による波状グラフェンの形成

    木村佳祐、乗松航、楠美智子

    第9回 日本表面科学会中部支部 学術講演会 

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    Event date: 2009.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  253. SiC(0001)上グラフェンの形成過程

    乗松航、楠美智子

    第9回 日本表面科学会中部支部 学術講演会 

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    Event date: 2009.12.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  254. Design of High-functional Nano-Carbon Structures on SiC Surface International conference

    NTTH Joint Symposium on Advanced Materials Science 

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    Event date: 2009.12.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  255. Wavy graphene formed by surface decomposition of TiC International conference

    NTTH Joint Symposium on Advanced Materials Science 

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    Event date: 2009.12.10

    Language:English   Presentation type:Poster presentation  

  256. SiC表面分解法による高配向カーボンナノチューブの直径制御

    吉川奈保子、乗松航、楠美智子

    日本セラミックス協会東海支部学術研究発表会 

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    Event date: 2009.11.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  257. Application of close-packed-carbon-nanotube films on SiC for heat-release devices International conference

    The International Conference on Carbon Nanostructured Materials (Cnano `09) 

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    Event date: 2009.10.6

    Language:English   Presentation type:Poster presentation  

  258. SiC上グラフェンの高分解能透過型電子顕微鏡観察

    乗松航、楠美智子

    日本物理学会 秋季大会 

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    Event date: 2009.9.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  259. Heat-release Application of the Carbon-nanotube/silicon-carbide Composite Materials Made From Used-SiC Abrasive Powders International conference

    R'09 Twin World Congress 

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    Event date: 2009.9.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  260. Upgrade Conversion of Spent SiC Abrasive Powder to CNT particles International conference

    R'09 Twin World Congress 

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    Event date: 2009.9.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  261. Si Doping into Densely-Aligned Carbon Nanotube Films on SiC International conference

    R'09 Twin World Congress 

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    Event date: 2009.9.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  262. SiC表面分解法によるグラフェンの高分解能透過型電子顕微鏡観察

    乗松航、楠美智子

    応用物理学会 第70回学術講演会 

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    Event date: 2009.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  263. Siドープカーボンナノチューブ配向膜の作製

    用物理学会 第70回学術講演会

    応用物理学会 第70回学術講演会 

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    Event date: 2009.9.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  264. 高配向CNT/SiC複合体の高効率放熱材料への応用

    乗松航、楠美智子

    第4回3大学3研究所連携プロジェクト公開討論会 

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    Event date: 2009.8.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  265. Doping of Si into Aligned Carbon Nanotube Films on SiC International conference

    The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS) 

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    Event date: 2009.7.20

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  266. Atomic structures of the interface between homogeneous graphene and 6H-SiC (0001) International conference

    The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS) 

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    Event date: 2009.7.20

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  267. TiC表面分解法による波上グラフェンの形成過程

    木村佳祐、乗松航、楠美智子

    第38回東海若手セラミスト懇話会 

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    Event date: 2009.7.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  268. SiC表面分解法を用いたCNT膜の合成と電気的特性評価

    盛田壮登、乗松航、楠美智子

    第38回東海若手セラミスト懇話会 

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    Event date: 2009.7.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  269. 炭化アルミニウム表面分解過程の透過型電子顕微鏡による観察

    高田重治、乗松航、楠美智子

    第38回東海若手セラミスト懇話会 

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    Event date: 2009.7.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  270. SiC表面分解法により作製したグラフェン/SiC界面の透過型電子顕微鏡観察

    乗松航、楠美智子

    日本顕微鏡学会 第65回学術講演会 

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    Event date: 2009.5.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  271. TiC表面分解法によるグラフェンの形成過程

    木村佳祐、乗松航、楠美智子

    日本顕微鏡学会 第65回学術講演会 

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    Event date: 2009.5.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  272. グラフェン/SiC界面の透過型電子顕微鏡観察

    乗松航、楠美智子

    応用物理学会 第56回関係連合講演会 

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    Event date: 2009.3.31

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  273. SiC表面分解グラフェンにおける界面の構造

    乗松航、楠美智子

    日本物理学会 第64回年次大会 

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    Event date: 2009.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  274. Transmission electron microscope observation of the interface between graphene and 6H-SiC (0001) International conference

    Graphene Week 2009 

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    Event date: 2009.3.5

    Language:English   Presentation type:Poster presentation  

  275. 高密度・高配向CNT膜へのSiドープ

    丸山雄大、吉田健太、乗松航、楠美智子

    第36回フラーレン・ナノチューブ総合シンポジウム 

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    Event date: 2009.3.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  276. SiドープCNT配向膜の作製とTEMによる構造・組成評価

    丸山雄大、吉田健太、乗松航、楠美智子

    第8回日本表面科学会中部支部学術講演会若手講演会 

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    Event date: 2008.12.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  277. SiC表面グラフェンにおける界面の構造

    乗松航、楠美智子

    第8回日本表面科学会中部支部学術講演会若手講演会 

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    Event date: 2008.12.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  278. Application of carbon-nanotube/silicon-carbide composite materials for heat-release devices International conference

    The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008) 

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    Event date: 2008.12.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  279. Formation of uniform carbon nanotube films and graphene on SiC International conference

    The 5th International Symposium on Surface Science and Nanotechnology (ISSSN) 

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    Event date: 2008.11.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  280. Interface Structure Of Graphene On Silicon Carbide International conference

    Nagoya Univ.-Tshinghua Univ.-Toyota Joint Symposium (N-T-T) 

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    Event date: 2008.9.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  281. SiC表面分解法によるカーボンナノチューブの放熱応用

    乗松航、楠美智子、河合千尋

    応用物理学会 2008年第69回学術講演会 

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    Event date: 2008.9.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  282. SiC上グラフェンにおける界面の構造

    乗松航、楠美智子

    応用物理学会 2008年第69回学術講演会 

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    Event date: 2008.9.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  283. SiC表面分解法により作製したカーボンナノチューブの放熱応用

    乗松航、河合千尋、楠美智子

    第35回記念フラーレン・ナノチューブ総合シンポジウム 

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    Event date: 2008.8.27

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  284. SiドープCNT配向膜の作製とTEMによる構造・組成評価

    丸山雄大、吉田健太、乗松航、楠美智子

    第36回東海若手セラミスト懇話会(岐阜ホテルパーク) 

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    Event date: 2008.7.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  285. SiドープCNT配向膜の作製とTEMによる構造・組成評価

    丸山雄大、吉田健太、乗松航、楠美智子

    日本顕微鏡学会 2008年第64回学術講演会 

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    Event date: 2008.5.23

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  286. Sr1.5La0.5MnO4における軌道変調・電荷密度波状態の結晶学的特徴

    乗松航、小山泰正

    日本物理学会 2008年第63回年次大会 

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    Event date: 2008.3.26

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  287. Mechanical Characteristics of Closed-Packed Carbon Nanotubes on SiC International conference

    International Carbon nanotube conference in NU (ICNTC) 

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    Event date: 2008.2.14

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  288. Sr2-xNdxMnO4における軌道・電荷変調状態の結晶学的特徴

    乗松航、小山泰正

    日本物理学会 2007年第62回年次大会 

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    Event date: 2007.9.23

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  289. Crystallographic features of the orbital-ordered state in the layered perovskite manganite Sr2-xPrxMnO4 International conference

    The International Conference on Strongly Correlated Electron Systems (SCES'07) 

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    Event date: 2007.5.15

    Language:English   Presentation type:Poster presentation  

  290. 層状ペロブスカイトSr2-xNdxMnO4における軌道整列状態の特徴

    乗松航、小山泰正

    日本物理学会 2007年春季大会 

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    Event date: 2007.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  291. Stability of electronic states in the layered perovskite Sr2-xNdxMnO4 International conference

    19th International Symposium on Superconductivity (ISS2006) 

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    Event date: 2006.11.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  292. Sr2-xNdxMnO4における軌道整列および電荷・軌道整列状態の安定性

    乗松航、小山泰正

    日本物理学会 2006年秋季大会 

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    Event date: 2006.9.23

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  293. 層状ペロブスカイト型酸化物(Sr,La)2MnO4における低温斜方晶相の透過型電子顕微鏡観察

    乗松航、小山泰正

    日本金属学会 2005年秋期大会 

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    Event date: 2005.9.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  294. 層状ペロブスカイト(Sr,La)2MnO4における低温斜方晶相の透過型電子顕微鏡観察

    乗松航、小山泰正

    日本物理学会 2005年秋季大会 

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    Event date: 2005.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  295. Crystallographic features of the low-temperature orthorhombic state in Sr2-xLaxMnO4 around x=0.15 International conference

    The International Conference on Strongly Correlated Electron Systems 2005 (SCES05) 

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    Event date: 2005.6.23

    Language:English   Presentation type:Oral presentation (general)  

  296. 層状ペロブスカイト(Sr,La)2MnO4における低温斜方晶相の結晶学的特徴

    乗松航、小山泰正

    日本物理学会 第60回年次大会 

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    Event date: 2005.3.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  297. 層状ペロブスカイト型Mn酸化物(Sr,La)2MnO4における強誘電相転移の特徴

    乗松航、小山泰正

    日本金属学会 2004年秋期大会 

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    Event date: 2004.9.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  298. (Sr,La)2MnO4における強誘電相転移の結晶学的特徴

    乗松航、小山泰正

    日本物理学会 2004年秋季大会 

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    Event date: 2004.9.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  299. Dielectric and crystallographic features of the orthorhombic phase in Sr2-xLaxMnO4 around x=0.15 International conference

    The 5th Korea-Japan Conference on Ferroelectricity (KJCFE2004) 

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    Event date: 2004.8.19

    Language:English   Presentation type:Poster presentation  

  300. Sr2-xLaxMnO4における強誘電相の特徴

    乗松航、小山泰正

    日本物理学会 第59回年次大会 

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    Event date: 2004.3.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 6

  1. 【代表】低環境負荷ナノカーボン材料の作製と評価

    2019.04 - 2021.03

    早稲田大学各務記念材料技術研究所環境整合材料基盤技術共同研究 

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    Grant type:Competitive

  2. 【代表】カーボンナノチューブ/SiCヘテロ構造における光誘起電子物性研究

    2017.08 - 2018.03

    立松財団 

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    Grant type:Competitive

  3. 【代表】超高移動度・高機能SiC表面上グラフェンの研究

    2012.07 - 2015.03

    旭硝子財団若手継続グラント 

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    Grant type:Competitive

  4. 【代表】強誘電ナノ物質の分域構造に対するサイズおよび形状効果の研究

    2010.04 - 2011.03

    村田学術振興財団 

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    Grant type:Competitive

  5. 【代表】SiC(000-1)面上グラフェンの創製と構造解析

    2010.04 - 2011.03

    立松財団 

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    Grant type:Competitive

  6. 【代表】SiC表面分解によるグラフェンの形成過程の研究

    2009.04 - 2011.03

    旭硝子財団 

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    Grant type:Competitive

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KAKENHI (Grants-in-Aid for Scientific Research) 4

  1. 【代表】固体電解質/高品質単一方位グラフェンによるリチウム挿入脱離現象の解明

    Grant number:20H05287  2020.04 - 2022.03

    科学研究費補助金   新学術領域研究(研究領域提案型)

    乗松 航

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    Authorship:Principal investigator 

    Grant amount:\3900000 ( Direct Cost: \3000000 、 Indirect Cost:\900000 )

    研究期間全体の計画としては、(1)大面積単一方位グラフェンと固体電解質酸化物を用いたセルの作製とその電気化学特性評価、および(2)グラフェンの層数、結晶粒界、および欠陥が電気化学特性に及ぼす効果の解明である。初年度には主に(1)に取り組み、大面積単層グラフェンをモデル試料として、固体電解質との界面における電気化学反応の詳細を明らかにする。次年度には、初年度の内容を継続するとともに、グラフェンの層数を変えた試料、多結晶多層グラフェン試料、意図的にグラフェン中に欠陥を導入した試料についても同様の実験を行い、それらが電気化学特性に及ぼす効果を明らかにする。

  2. 【代表】半絶縁性SiC上ウェハスケールグラフェンはエレクトロニクス応用に最適なのか?

    Grant number:18H01889  2018.04 - 2021.03

    科学研究費補助金 

    乗松 航

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    Authorship:Principal investigator 

    Grant amount:\17550000 ( Direct Cost: \13500000 、 Indirect Cost:\4050000 )

    SiC上エピタキシャルグラフェンおよびCVDグラフェンを、SiC上、バッファー層/SiC上、およびSiO2/Si上に転写した試料の電子状態について、それぞれ複数回の電気伝導測定および角度分解光電子分光(ARPES)測定を行った。その結果、低真空中で行った電気伝導測定でp型を示し、超高真空中で行ったARPES測定でn型を示す原因については、試料を大気中に置いた際のグラフェンへの酸素や水によるホールドープが原因である可能性が高いことがわかった。グラフェン転写技術について、研究室所属学生が米国MITの共同研究グループに出向いて習得を行い、5x5mm2のグラフェンをクリーンに転写することが可能となった。実際、極めてクリアなARPESイメージを得られるようになり、基板および界面由来の強い電子ドープが観測された。基板効果および界面効果についての詳細を明らかにできる試料を得られたため、今後は電気伝導測定と合わせてより精密に解析を行っていく。
    高圧水素インターカレーションによりバッファー層をグラフェン化した試料について、顕微ラマン分光測定によるマッピングを行った。ラマンスペクトルにおける2Dバンドのマッピングの結果から、基板表面のステップに平行なコントラストが得られた。一方、Dバンドマッピングの結果から、水素欠損に対応すると考えられる欠陥は、ステップに対して下側のテラスには少なく、上側のテラスに多いことがわかった。これらの結果は、インターカレートされた水素が、ステップをまたいで拡散することはないことを示唆している。
    本年度の主な実績として、SiC上グラフェンのラマン分光測定と界面構造改質についての論文を2報出版した。
    2019年度に計画していた内容として、電気伝導測定とARPES測定における矛盾の原因については、大気中の酸素と測定における真空度の問題であると解明することができた。また、これまでのグラフェン転写技術を劇的に向上させ、5x5mm2サイズのグラフェンをクリーンに転写することができるようになった。これにより、電気伝導およびARPES測定の結果がさらにクリアになり、グラフェンの電気伝導に及ぼすグラフェンの質、SiC基板、界面の効果をより詳細に調べられるようになった。
    高圧水素インターカレーションによるバッファー層のグラフェン化および高移動度化について、顕微ラマン分光測定によってインターカレーションメカニズムが徐々に明らかになっている。現時点では、水素インターカレーションによって得られたグラフェンは、SiC上エピタキシャルグラフェンより高い移動度は得られていないものの、インターカレーションメカニズムの解明によって、その原因が水素欠損とそれに伴うグラフェンの欠陥であること、欠陥には試料表面形態と関係した分布があることが明らかになりつつある。
    また、当初予想していなかった結果として2019年度後半に、SiC上に成長した2層グラフェンを引き剥がし、別のSiC上バッファー層試料の上に貼り付けたところ、大面積のtwisted bilayer grapheneが得られることがわかった。
    転写の技術が向上してきたため、SiC上グラフェンおよびCVDグラフェンを、SiC上、バッファー層/SiC上、およびSiO2/Si上に転写した各種試料を用いて、グラフェンの移動度に及ぼすグラフェンの質、SiC基板、界面の効果を定量的に解析する。また、SiC上に六方晶窒化ホウ素(h-BN)転写し、その上にグラフェンを転写することで、界面の効果について詳細を明らかにするとともに、SiC上グラフェンにおける最高の移動度の到達を目指す。
    SiC基板の効果に関しては、グラフェン成長はSiCからのSiの脱離を伴うため、グラフェン形成後のSiC表面付近にSi欠損が存在する可能性がある。これがグラフェンの移動度低下の原因になりうる。そこで、この基板効果を明らかにするため、X線反射率測定を行う。表面付近のSiCにおいて、Si欠損の存在を仮定した解析を行い、欠損の程度と移動度低下の関係を探る。
    高圧水素インターカレーションについては、メカニズムが明らかになってきており、複数の試料を用いた実験により、水素が試料表面のどこから侵入してどのように拡散するのかのさらなる詳細を明らかにする。その知見に基づいて、高品質グラフェンの作製を行う。また、並行して透過型電子顕微鏡による水素欠損の観察も行い、水素欠損の原子レベルでの詳細を明らかにする。より高純度での水素中加熱実験を行うために、水素ガスフィルターを導入し、高圧水素インターカレーション条件の最適化を行うことで、グラフェンの移動度向上を目指す。
    さらに、2019年度後半に明らかになった大面積twisted bilayer grapheneの電子状態について、その詳細を角度分解光電子分光測定を行うことで明らかにする。

  3. Experimental and theoretical study on the two-dimensional Al-C material AlCene

    Grant number:16K13674  2016.04 - 2018.03

    Norimatsu Wataru

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    Authorship:Principal investigator 

    Grant amount:\3770000 ( Direct Cost: \2900000 、 Indirect Cost:\870000 )

    In this study, growth of two-dimensional aluminum carbide was demonstrated. As a result of the first-principles calculation, two-dimensional aluminum carbide (AlCene) was a semiconductor with a indirect gap of about 2.18 eV. On the other hand, highly crystalline and extremely thin aluminum carbide was successfully grown on the SiC (000-1) substrate by the pulsed laser deposition technique. At the interface, the carbon atoms of the topmost SiC surface and the aluminum atoms of the aluminum carbide made bonds, which was revealed by high-resolution transmission electron microscope observations.

  4. 【代表】SiCをプラットフォームとする新規グラフェン成長手法の確立

    Grant number:26706014  2014.04 - 2017.03

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

Industrial property rights 11

  1. グラフェン/SiC複合材料の製造方法

    楠美智子,乗松航,包建峰

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    Application no:特願2015-35117  Date applied:2015.2.25

    Country of applicant:1  

  2. グラフェン/SiC複合材料の製造方法及びそれにより得られるグラフェン/SiC複合材料

    楠美智子、木村佳祐、庄司健太郎、乗松航

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    Applicant:国立大学法人名古屋大学

    Application no:特願2013-21076  Date applied:2013.2.6

    Announcement no:特開2014-152051  Date announced:2014.8.25

    Country of applicant:1  

  3. ヒートフロースイッチ

    高橋知典、大塚春男、楠美智子、乗松航

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    Applicant:日本碍子株式会社、国立大学法人名古屋大学

    Application no:特願2011-88535  Date applied:2012.1.18

    Announcement no:WO2012/140927  Date announced:2012.10.18

    Country of applicant:1  

  4. グラフェン/SiC複合材料の製造方法及びそれにより得られるグラフェン/SiC複合材料

    楠 美智子、乗松 航

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    Applicant:国立大学法人名古屋大学

    Application no:PCT/JP2009/004200  Date applied:2009.8.28

    Announcement no:WO/2010/023934 

    Country of applicant:1  

  5. 放熱構造、該放熱構造の製造方法及び該放熱構造を用いた放熱装置、ダイヤモンドヒートシンク、該ダイヤモンドヒートシンクの製造方法及び該ダイヤモンドヒートシンクを用いた放熱装置、並びに放熱方法

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:PCT/JP2008/071512  Date applied:2008.11.27

    Announcement no:WO 2009/069684 

    Country of applicant:1  

  6. グラフェンの製造方法

    楠 美智子、乗松 航

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    Applicant:国立大学法人名古屋大学

    Application no:特願2008-220179  Date applied:2008.8.28

    Country of applicant:1  

  7. 放熱構造とその製造方法及び該放熱構造を用いた放熱装置

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:特願2008-075143  Date applied:2008.3.24

    Country of applicant:1  

  8. 放熱構造、その製造方法及び該放熱構造を用いた放熱装置

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:特願2008-075328  Date applied:2008.3.24

    Country of applicant:1  

  9. 放熱方法

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:特願2008-020092  Date applied:2008.1.31

    Country of applicant:1  

  10. ダイヤモンドヒートシンク、放熱装置及びダイヤモンドヒートシンクの製造方法

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:特願2008-020093  Date applied:2008.1.31

    Country of applicant:1  

  11. 放熱構造及び該放熱構造を用いた放熱装置

    河合 千尋、楠 美智子、乗松 航

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    Applicant:住友電気工業株式会社、国立大学法人名古屋大学、財団法人ファインセラミックスセンター

    Application no:特願2007-308263  Date applied:2007.11.29

    Country of applicant:1  

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Teaching Experience (On-campus) 29

  1. 電磁気学II

    2020

  2. 学生実験1

    2020

  3. 学生実験2

    2020

  4. マテリアル工学概論

    2020

  5. 先端マテリアル工学概論

    2020

  6. 電磁気学II

    2019

  7. 物理化学4

    2019

  8. 学生実験1

    2019

  9. 学生実験2

    2019

  10. マテリアル工学概論

    2019

  11. 先端マテリアル工学概論

    2019

  12. 先端物理化学演習

    2019

  13. Chemistry Tutorial I

    2016

  14. 無機・物理化学演習第1

    2016

  15. 無機物理化学実験

    2016

  16. 無機物理化学実験

    2015

  17. 無機・物理化学演習第1

    2015

  18. Chemistry Tutorial I

    2015

  19. Chemistry Tutorial I

    2014

  20. 無機・物理化学演習第1

    2014

  21. 無機物理化学実験

    2014

  22. 無機物理化学実験

    2013

  23. 無機・物理化学演習第1

    2013

  24. 無機・物理化学演習第1

    2012

  25. 無機物理化学実験

    2012

  26. 無機・物理化学演習第1

    2011

  27. 無機物理化学実験

    2011

  28. 無機・物理化学演習第1

    2009

  29. 無機物理化学実験

    2009

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