Updated on 2022/03/30

写真a

 
KONDO, Hiroki
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Associate professor
Contact information
メールアドレス
External link

Degree 1

  1. Dr (Engineering) ( 1999.3   Nagoya University ) 

Research Interests 6

  1. Plasma process

  2. Surface and interface physics

  3. Material science

  4. Solid State devices

  5. Nano-bio devices

  6. Nano-bio devices

Research Areas 5

  1. Others / Others  / Plasma process

  2. Others / Others  / Engineering@Applied Physics/Fundamentals of Engineering@Surface Physics

  3. Others / Others  / Engineering@Applied Physics/Fundamentals of Engineering@Applied Physics of Property and Crystallography

  4. Others / Others  / Micro/Nanodevice

  5. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Current Research Project and SDGs 4

  1. Syntheses of Nano-materials by advanced plasma processes

  2. Device applications of carbon nanowalls

  3. High-speed growth of InGaN by high-density nitrogen radical irradiation

  4. Studies on metal gate/High-k/Ge gate stack structures for next-generation MOS field-effect-transistors.

Research History 6

  1. Nagoya University   Center for Low-temperature Plasma Sciences (cLPS)   Associate professor

    2019.4

  2. Associate Professor   Associate professor

    2011.10

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    Country:Japan

  3. Nagoya University, Graduate school of engineering, Associate professor   Designated associate professor

    2009.8 - 2011.9

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    Country:Japan

  4. Assistant professor, Graduate school of Engineering, Nagoya university   Assistant Professor

    2007.4

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    Country:Japan

  5. Nagoya universty, Graduate school of engineering, Assistant researcher   Assistant

    2002.7 - 2007.3

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    Country:Japan

  6. FUJITSU LIMITED,Researcher of Fujitsu laboratry   Researcher

    1999.4 - 2002.6

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    Country:Japan

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Education 4

  1. Nagoya University   Graduate School, Division of Engineering   Department of Crystalline Materials Science

    1996.4 - 1999.3

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    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Department of Crystalline Materials Science

    1994.4 - 1996.3

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    Country: Japan

  3. Nagoya University   Faculty of Engineering   Department of Applied Physics

    1990.4 - 1994.3

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    Country: Japan

  4. Nagoya University   Graduate School, Division of Engineering   Department of Crystalline Materials Science

    1996.4 - 1999.3

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    Country: Japan

Professional Memberships 3

  1. the Japan Society of Applied Physics

    2002.9

  2. プラズマ核融合学会

    2020

  3. The Surface Science Society of Japan

Committee Memberships 1

  1. 応用物理学会東海支部役員会   幹事  

    2014.4   

Awards 6

  1. 第11回プラズマエレクトロニクス賞

    2013.3   応用物理学会 プラズマエレクトロニクス分科会  

    石川 健治、河野 昭彦、堀邊 英夫、竹田 圭吾、近藤博生、関根 誠、堀 勝

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    Award type:Award from Japanese society, conference, symposium, etc. 

  2. MNC2004 Award for Outstanding Paper

    2005.10   MNC organizing commitee  

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  3. The Best Oral Presentation Awards, ISPlasma2019/IC-PLANTS2019

    2019.3   ISPlasma2019/IC-PLANTS2019   Control of sp2-C Fraction and Hardness of Amorphous Carbon Films by Formation of Precursor Radicals Depending on a Residence Time"

    Hirotsugu Sugiura, Yasuyuki Ohashi, Ligyun Jia, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine and Masaru Hori

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    Award type:Award from international society, conference, symposium, etc. 

  4. 第66回日本酸化ストレス学会 優秀演題賞

    2013.6   日本酸化ストレス学会  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    中村 香江, 梶山 広明, 内海史, 田中 宏昌, 水野 正明, 石川 健治, 近藤 博基, 加納 浩之, 堀 勝, 吉川 史隆

  5. ISPlasma2013 Best Poster Presentation Award

    2013.2   5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013)  

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  6. LSIとシステムのワークショップ2015 一般部門最優秀ポスター賞

    2015   電子情報通信学会集積回路研究会   がん細胞カウンティングのための無電解金メッキによる1.2um x 2.05um 1024 x 1024電極アレイ付CMOS集積プラットフォーム

    新津 葵一, 近藤 博基, 堀 勝

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    Award type:Award from Japanese society, conference, symposium, etc. 

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Papers 262

  1. Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature Reviewed

    Sugiura Hirotsugu, Kondo Hiroki, Higuchi Kimitaka, Arai Shigeo, Hamaji Ryo, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

    CARBON   Vol. 170   page: 93 - 99   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.carbon.2020.07.052

    Web of Science

    Scopus

  2. Synthesis of carbon nanowalls on the surface of nanoporous alumina membranes by RI-PECVD method Reviewed International coauthorship

    Yerassyl Yerlanuly, Dennis Christy, Ngo Van Nong, Hiroki Kondo, Balaussa Alpysbayeva, Renata Nemkayeva, Meruert Kadyr, Tlekkabul Ramazanov, Maratbek Gabdullin, Didar Batryshev, Masaru Hori

    Applied Surface Science   Vol. 523   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2020.146533

    Scopus

  3. In-plane modification of hexagonal boron nitride particles via plasma in solution Invited Reviewed International coauthorship International journal

    Ito Tsuyohito, Goto Taku, Inoue Kenichi, Ishikawa Kenji, Kondo Hiroki, Hori Masaru, Shimizu Yoshiki, Hakuta Yukiya, Terashima Kazuo

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 )   2020.6

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)  

    Web of Science

  4. Transparent elongation and compressive strain sensors based on aligned carbon nanowalls embedded in polyurethane Invited Reviewed International coauthorship International journal

    Petr Slobodian, Pavel Riha, Hiroki Kondo, Uroš Cvelbar, Robert Olejnik, Jiri Matyas, Makoto Sekine, Masaru Hori

    Sensors and Actuators, A: Physical   Vol. 306   2020.5

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sna.2020.111946

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  5. N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence Reviewed International coauthorship

    Neelakandan M. Santhosh, Gregor Filipič, Eva Kovacevic, Andrea Jagodar, Johannes Berndt, Thomas Strunskus, Hiroki Kondo, Masaru Hori, Elena Tatarova & Uroš Cvelbar

    Nano-Micro Letters   Vol. 12 ( 1 )   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s40820-020-0395-5

    Scopus

  6. Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma Invited Reviewed International coauthorship International journal

    Liu Zecheng, Ishikawa Kenji, Imamura Masato, Tsutsumi Takayoshi, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06JD01

    Web of Science

    Scopus

  7. Effects of gas residence time of CH4/H-2 on sp(2) fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition Invited Reviewed International coauthorship International journal

    Sugiura Hirotsugu, Jia Lingyun, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Hayashi Toshio, Takeda Keigo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06JE03

    Web of Science

    Scopus

  8. Impact of helium pressure in arc plasma synthesis on crystallinity of single-walled carbon nanotubes Invited Reviewed International coauthorship International journal

    Ando Atsushi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Suzuki Tomoko, Inoue Sakae, Ando Yoshinori, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06JF01

    Web of Science

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  9. Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas Invited Reviewed International coauthorship International journal

    Ueyama Toshinari, Fukunaga Yusuke, Tsutsumi Takayoshi, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Iwata Manabu, Ohya Yoshinobu, Sugai Hideo, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.06HC03

    Web of Science

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  10. Hydrogen peroxide sensor based on carbon nanowalls grown by plasma-enhanced chemical vapor deposition Invited Reviewed International coauthorship International journal

    Tomatsu Masakazu, Hiramatsu Mineo, Foord John S., Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Takeda Keigo, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.06HF03

    Web of Science

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  11. Thermally enhanced formation of photon-induced damage on GaN films in Cl<inf>2</inf> plasma Invited Reviewed International coauthorship International journal

    Zecheng Liu, Atsuki Asano, Masato Imamura, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine and Masaru Hori

    Japanese Journal of Applied Physics   Vol. 56 ( 9 )   2017

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.096501

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  12. Plasma with high electron density and plasma-activated medium for cancer treatment Invited Reviewed International coauthorship International journal

    Tanaka Hiromasa, Mizuno Masaaki, Ishikawa Kenji, Kondo Hiroki, Takeda Keigo, Hashizume Hiroshi, Nakamura Kae, Utsumi Fumi, Kajiyama Hiroaki, Kano Hiroyuki, Okazaki Yasumasa, Toyokuni Shinya, Akiyama Shin'ichi, Maruyama Shoichi, Yamada Suguru, Kodera Yasuhiro, Kaneko Hiroki, Terasaki Hiroko, Hara Hirokazu, Adachi Tetsuo, Iida Machiko, Yajima Ichiro, Kato Masashi, Kikkawa Fumitaka, Hori Masaru

    CLINICAL PLASMA MEDICINE   Vol. 3 ( 2 ) page: 72 - 76   2015.12

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.cpme.2015.09.001

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  13. Live demonstration: A CMOS sensor platform with 1.2 μm × 2.05 μm electroless-plated 1024 × 1024 microelectrode array for high-sensitivity rapid direct bacteria counting Invited Reviewed International coauthorship International journal

    Ota S., Niitsu K., Kondo H., Hori M., Nakazato K.

    IEEE 2014 Biomedical Circuits and Systems Conference, BioCAS 2014 - Proceedings     2014.12

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:IEEE 2014 Biomedical Circuits and Systems Conference, BioCAS 2014 - Proceedings  

    High-sensitivity rapid direct bacteria counting is an essential key method for point-of-care testing. Counting pathogens (cells, viruses, and bacteria) directly in real time with high sensitivity is useful in maintaining human health and preventing pandemics or bioterrorism. However, conventional counting methods with high sensitivity such as the polymerase chain reaction and cultivation-based biochemical testing are time consuming and require controlled places and well-trained staff. On the other hand, conventional rapid approaches such as immuno-chromatography and ATP bioluminescence schemes are insufficient with respect to sensitivity. As an alternative, electro-chemical sensing approaches using a microelectrode have been intensely investigated because of its high-sensitivity, simplicity, and high-throughput. In this work, a CMOS sensor platform with a bacteria-sized (1.2 μm × 2.05 μm) Au electroless-plated 1024 × 1024 microelectrode array for high-sensitivity rapid direct bacteria counting is demonstrated. For high-sensitivity direct pathogen counting, Au microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the size of microelectrodes on a CMOS sensor chip was successfully reduced to 1.2 μm × 2.05 μm, corresponding to 1/20th of the smallest size reported in literature. Two test chips with 1024 × 1024 and 32 × 32 sensor arrays were fabricated in a 0.6-μm CMOS process and microelectrodes were formed on them using electroless plating. In this demonstration, 2D counting used 32 × 32 sensor arrays with silicone (fig. 1) by CV is introduced.

    DOI: 10.1109/BioCAS.2014.6981688

    Scopus

  14. Temporal changes in absolute atom densities in H2 and N 2 mixture gas plasmas by surface modifications of reactor wall Invited Reviewed International coauthorship International journal

    Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 53 ( 5 ) page: 050301:1-4   2014.5

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    Real time vacuum ultraviolet absorption spectroscopic (VUVAS) measurements revealed that temporal changes in absolute atom densities in H2 and N2 mixture gas (H2/N2) plasmas were affected by the conditions of the reactor inner wall-surface made of anodically-oxidized aluminum. Depending on preceding processes prior to the H2/N 2 plasma process, N and H atom densities decreased for a nitrided wall surface, while no change occurred for a hydrogenated surface. Thus, the process history was revealed in the loss-properties of atoms on the reactor wall-surfaces. Suppressing the temporal variations in the gas-phase atom density is crucially important for realizing the precise control of the material processing with a high reproducibility. © 2014 The Japan Society of Applied Physics.

    DOI: 10.7567/JJAP.53.050301

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  15. Surface Chemical Modification of Carbon Nanowalls for Wide-Range Control of Surface Wettability Invited Reviewed International coauthorship International journal

    Hitoshi Watanabe, Hiroki Kondo, Mineo Hiramatsu, Makoto Sekine, Shailesh Kumar, Kostya Ostrikov, Masaru Hori

    PLASMA PROCESSES AND POLYMERS   Vol. 10 ( 7 ) page: 582 - 592   2013.7

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:WILEY-V C H VERLAG GMBH  

    Carbon nanowalls (CNWs) are self-assembled, free-standing, few-layered graphenenano-structures with large surface area, and thin graphene edges. For their application to nanobiotechnology, the effects of chemisorbed species on surface wettability were investigated. The surfaces of as-grown CNWs obtained using CH4/H-2 mixture were hydrophilic. After Ar atmospheric pressure plasma treatments for up to 30s, the contact angles of water droplets on the CNWs decreased from 51 degrees to 5 degrees, owing to a result of oxidation only at edges and surface defects. They increased up to 147 degrees by CF4 plasma treatment at low pressure. The wide-range control of surface wettability of CNWs was realized by post-growth plasma treatments. We also demonstrated detection of bovine serum albumin using surface-modified CNWs as electrodes.

    DOI: 10.1002/ppap.201200141

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  16. I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source Invited International coauthorship International journal

    KAWAI Yohjiro, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji, Hori Masaru

    The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP   Vol. 2013 ( 0 ) page: 5 - 7   2013

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Mechanical Engineers  

    Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

    DOI: 10.1299/jsmeiip.2013.5

    CiNii Research

  17. Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films Invited Reviewed International coauthorship International journal

    R.L. Puurunen, T. Suni, O.M.E. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

    Sensors and Actuators A: Physical   Vol. 188   page: 268 - 276   2012.12

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sna.2012.05.006

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  18. Selective killing of ovarian cancer cells through induction of apoptosis by nonequilibrium atmospheric pressure plasma Invited Reviewed International coauthorship International journal

    Sachiko Iseki, Kae Nakamura, Moemi Hayashi, Hiromasa Tanaka, Hiroki Kondo, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, Masaru Hori

    APPLIED PHYSICS LETTERS   Vol. 100 ( 11 ) page: 10.1063/1.3694928   2012.3

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:AMER INST PHYSICS  

    Two independent ovarian cancer cell lines and fibroblast controls were treated with nonequilibrium atmospheric pressure plasma (NEAPP). Most ovarian cancer cells were detached from the culture dish by continuous plasma treatment to a single spot on the dish. Next, the plasma source was applied over the whole dish using a robot arm. In vitro cell proliferation assays showed that plasma treatments significantly decreased proliferation rates of ovarian cancer cells compared to fibroblast cells. Flow cytometry and western blot analysis showed that plasma treatment of ovarian cancer cells induced apoptosis. NEAPP could be a promising tool for therapy for ovarian cancers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694928]

    DOI: 10.1063/1.3694928

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  19. Control of Super Hydrophobic and Super Hydrophilic Surfaces of Carbon Nanowalls Using Atmospheric Pressure Plasma Treatments Invited Reviewed International coauthorship International journal

    Hitoshi Watanabe, Hiroki Kondo, Makoto Sekine, Mineo Hiramatsu, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 1 )   2012.1

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:IOP PUBLISHING LTD  

    Super hydrophobic and super hydrophilic surface treatment methods for carbon nanowalls (CNWs) which are carbon nanostructures consisting of stacks of graphene sheets vertically standing on substrates and having ultra high aspect ratios of over 50, were developed using atmospheric pressure plasma, and their mechanisms were discussed on the basis of the elemental compositions of surfaces. The contact angle of water droplet on CNWs markedly decreased from 137.3 to 6.2 degrees with the atmospheric pressure plasma treatments using Ar gas. This indicates the super hydrophobic and super hydrophilic transition of CNW surfaces. Although a morphological change was hardly found, the surface compositions of fluorine and oxygen atoms markedly changed after the plasma treatment for only 5s. Furthermore, the treatment time dependence of the surface tension of CNWs indicates two different mechanisms at earlier and later stages of surface modification using atmospheric pressure plasma. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.01AJ07

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  20. Graphene forest devices as cell scaffolds for stem cells Invited Reviewed International coauthorship International journal

    Okamoto Y., Watanabe H., Kubo K., Kondo H., Kaji N., Tokeshi M., Hori M., Baba Y.

    Proceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2012     page: 1633 - 1635   2012

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Proceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2012  

    We developed carbon nanowalls devices (CNWs), on which graphenes vertically stand in the nanometer spacing like "graphene forest", with different wettability. CNWs permitted cell adhesion and proliferation, and especially super hydrophobic CNWs enabled easy and less invasive cell collection. Furthermore, collagen coated CNWs successfully enhanced the differential ability of the human mesenchymal stem cells (hMSC) to osteoblast cells compared to collagen coated polystyrene culture dishes. Thus, CNWs have superior many properties as cells scaffolds and are expected to be useful for regenerative medicine.

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  21. Impacts of CF+, CF2+, CF3+, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist Invited Reviewed International coauthorship International journal

    Takuya Takeuchi, Shinpei Amasaki, Hiroki Kondo, Kenji Ishikawa, Hirotaka Toyoda, Makoto Sekine, Song-Yun Kang, Ikuo Sawada, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 8 PART 2 ) page: 08JE05 - 08JE05-5   2011.8

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:IOP PUBLISHING LTD  

    Photoresists used in advanced ArF-excimer laser lithography are not tolerant enough for plasma etching processes. Degradation of photoresists during etching processes might cause not only low selectivity, but also line edge roughness (LER) on the sidewalls of etched patterns. For a highly accurate processing, it is necessary to understand the mechanisms of etching photoresists and to construct a new plasma chemistry that realizes a nano scale precise pattern definition. In this study, the modified layers formed on the surface of a photoresist by the bombardment of fluorocarbon ions of CF+, CF2+, and CF3+, and argon (Ar) ions were analyzed by X-ray photoelectron spectroscopy (XPS). The etching yield of the modified steady-state surface was almost dependent on the mass of incident ion species. The surface composition was modified with increasing dosage of each ion species, and reached a specific steady state that was dependent on the ion species. The bombardment of F-rich ion species such as CF2+ and CF3+ resulted in the formation of not only fluorocarbon layers, but also graphite like structures on the surface. On the basis of these results, the surface reaction for the ion-beam-induced modification was discussed. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.08JE05

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    CiNii Books

  22. Synergistic Formation of Radicals by Irradiation with Both Vacuum Ultraviolet and Atomic Hydrogen: A Real-Time In Situ Electron Spin Resonance Study Invited Reviewed International coauthorship International journal

    Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    JOURNAL OF PHYSICAL CHEMISTRY LETTERS   Vol. 2 ( 11 ) page: 1278 - 81   2011.6

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    We report on the surface modification of poly(tetrafluoroethylene) (PTFE) as an example of soft materials and biomaterials that occur under plasma discharge by kinetics analysis of radical formation using in situ real-time electron spin resonance (ESR) measurements. During irradiation with hydrogen plasma, simultaneous measurements of the gas-phase ESR signals of atomic hydrogen and the carbon dangling bond (C-DB) on PTFE were performed. Dynamic changes of the C-DB density were observed in real time, where the rate of density change was accelerated during initial irradiation and then became constant over time. It is noteworthy that C-DBs were formed synergistically by irradiation with both vacuum ultraviolet (VUV) and atomic hydrogen. The in situ real-time ESR technique is useful to elucidate synergistic roles during plasma surface modification.

    DOI: 10.1021/jz2002937

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    PubMed

  23. Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen Invited Reviewed International coauthorship International journal

    Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima

    SOLID-STATE ELECTRONICS   Vol. 60 ( 1 ) page: 70 - 74   2011.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:PERGAMON-ELSEVIER SCIENCE LTD  

    We have demonstrated the control of interfacial properties of Pr-oxide/Ge gate stack structure by the introduction of nitrogen. From C-V characteristics of Al/Pr-oxide/Ge3N4/Ge MOS capacitors, the interface state density decreases without the change of the accumulation capacitance after annealing. The TEM and TED measurements reveal that the crystallization of Pr-oxide is enhanced with annealing and the columnar structure of cubic-Pr2O3 is formed after annealing. From the depth profiles measured using XPS with Ar sputtering for the Pr-oxide/Ge3N4/Ge stack structure, the increase in the Ge component is not observed in a Pr-oxide film and near the interface between a Fr-oxide film and a Ge substrate. In addition, the N component segregates near the interface region, amorphous Pr-oxynitride (PrON) is formed at the interface. As a result, Pr-oxide/PrON/Ge stacked structure without the Ge-oxynitride interlayer is formed. (C) 2011 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.sse.2011.01.029

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  24. Radical-controlled plasma processing for nanofabrication Invited Reviewed International coauthorship International journal

    Masaru Hori, Hiroki Kondo, Mineo Hiramatsu

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 44 ( 17 ) page: 174027:1 - 174027:15   2011.5

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:IOP PUBLISHING LTD  

    Nanofabrication processes employing reactive plasma, such as etching and deposition, were discussed in this paper on the basis of knowledge of reactive species in the plasma. The processing characteristics were studied based on the absolute density measurements of radicals and ions. In the case of organic low-k film etching employing N-H plasma, H and N radicals have different roles from each other; the H radicals contribute to the chemical etching, while the N radicals form the protection layer. Therefore, the ratio of H and N radical densities is an important factor for determining the etching performance. Furthermore, the radical injection technique, an active way to control the composition of radicals in the reaction field, was successfully applied to grow carbon nanowalls, self-organized, free-standing, layered graphenes. For example, with increasing density ratio of H and fluorocarbon (CFx) radicals, the density of carbon nanowalls decreases. In addition, according to the carbon nanowalls' growth by the simultaneous irradiation of CFx radicals, hydrogen atoms and Ar ions, the ion bombardment is crucial for the nucleation and vertical growth of carbon nanowalls. Identification and characterization of radicals and ions in the processing plasma could open the way to the precise controls of nano-scale plasma processing.

    DOI: 10.1088/0022-3727/44/17/174027

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  25. Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet Invited Reviewed International coauthorship International journal

    Jia Fengdong, Sumi Naoya, Ishikawa Kenji, Kano Hiroyuki, Inui Hirotoshi, Kularatne Jagath, Takeda Keigo, Kondo Hiroki, Sekine Makoto, Kono Akihiro, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 2 )   2011.2

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    DOI: 10.1143/APEX.4.026101

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  26. Direct wafer bonding of atomic layer deposited TiO<inf>2</inf> and Al <inf>2</inf>O<inf>3</inf> thin films Invited Reviewed International coauthorship International journal

    Puurunen R.L., Suni T., Ylivaara O., Kondo H., Ammar M., Ishida T., Fujita H., Bosseboeuf A., Zaima S., Kattelus H.

    2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11     page: 978 - 981   2011

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11  

    In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides. © 2011 IEEE.

    DOI: 10.1109/TRANSDUCERS.2011.5969474

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  27. Hard X-ray photoelectron spectroscopy analysis for organic-inorganic hybrid materials formation Invited Reviewed International coauthorship International journal

    Cho K., Takenaka K., Setsuhara Y., Shiratani M., Sekine M., Hori M., Ikenaga E., Kondo H., Nakatsuka O., Zaima S.

    Ceramic Transactions   Vol. 219   page: 183 - 188   2010

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    Interactions of nitrogen plasmas with polymer surfaces were investigated using hard x-ray photoelectron spectroscopy (HXPES) to complete depth analyses of the chemical bonding states in the nano-surface layer of polymethylmethacrylate (PMMA) films via. The PMMA films were exposed to the nitrogen plasmas sustained via inductive coupling of radio-frequency (RF) power with multiple low-inductance antenna (LIA) modules. The etching rate of the PMMA films was 38 nm/min. The surface roughness of PMMA increased from 0.3 nm to 0.7 nm with increased exposure time. The HXPES was carried out for non-destructive depth analysis of chemical bonding states in the nano-surface layer of PMMA films. The HXPES results indicated that nitrogen functionalities were formed in the shallower regions up to about 27 nm from the surface without showing significant degradation of the molecular structure of PMMA due to nitrogen plasma exposure.

    DOI: 10.1002/9780470917145.ch27

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  28. Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(001) substrates Invited Reviewed International coauthorship International journal

    Takuya Mizutani, Osamu Nakatsuka, Akira Sakai, Hiroki Kondo, Masaki Ogawa, Shigeaki Zaima

    SOLID-STATE ELECTRONICS   Vol. 53 ( 11 ) page: 1198 - 1201   2009.6

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    We have proposed a novel method to form by microfabrication a uniaxial tensile strained Ge layer due to the elastic strain relaxation of a Si1-xGex buffer layer on a Si(0 0 1) substrate. A fully strain-relaxed Ge layer on a compressive strained Si0.60Ge0.40 Was epitaxially grown on Si(0 0 1) substrate and striped mesa lines were fabricated with a line width of 250 nm along the [1 1 0] direction. The strain of the Si0.60Ge0.40 layer was found to be elastically relaxed only along the direction perpendicular to the lines and a uniaxial tensile strained Ge layer was thus formed. The value of tensile strain of the Ge layer is estimated to be 0.25%. (C) 2009 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.sse.2009.08.001

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  29. Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf-Si-N Gate Electrodes for Metal-Oxide-Semiconductor Field-Effect Transistors Invited Reviewed International coauthorship International journal

    近藤 博基

    Japanese Journal of Applied Physics 48     page: 455051 - 455054   2009

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  30. Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes Invited Reviewed International coauthorship International journal

    近藤 博基

    Japanese Journal of Applied Physics 48     2009

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  31. Pt-germanideゲート電極の結晶構造及び電気的特性の評価 Invited Reviewed International coauthorship International journal

    近藤 博基, 坂下 満男, 酒井 朗, 小川 正毅, 財満 鎭明

    特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)     page: 277 - 282   2007

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  32. パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価 Invited Reviewed International coauthorship International journal

    坂下 満男, 酒井 朗, 中塚 理, 近藤 博基, 小川 正毅, 財満 鎭明

    特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)     page: 251 - 256   2007

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  33. Silicide and germanide technology for contacts and metal gates in MOSFET applications Invited Reviewed International coauthorship International journal

    S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

    ECS Transactions   Vol. 11 ( 6 ) page: 197 - 205   2007

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    We report silicide and germanide technology for ohmic contacts and metal gates of MOSFET applications. We have investigated control of crystalline and electrical properties of NiSi/Si contacts by the incorporation of third elements. Thermal stability and electrical properties of NiSi/Si contacts are effectively controlled by the incorporation of Ge and C. We have also systematically investigated the work function and the resistivity of various Ni and Pt germanides as metal gate materials. The low resistivity and tunable work function of these germanides and silcides are desirable for future CMOS devices. © The Electrochemical Society.

    DOI: 10.1149/1.2778377

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  34. Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates Invited Reviewed International coauthorship International journal

    Mochizuki S., Sakai A., Nakatsuka O., Kondo H., Yukawa K., Izunome K., Senda T., Toyoda E., Ogawa M., Zaima S.

    Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest   Vol. 2006   2006.12

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest  

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  35. Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8 Invited Reviewed International coauthorship International journal

    T. Hattori, H. Nohira, K. Azuma, K. W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Y. Sugita, E. Ikenaga, K. Kobayashi, Y. Takata, H. Kondo, S. Zaima

    International Journal of High Speed Electronics and Systems   Vol. 16 ( 1 ) page: 353 - 364   2006.3

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    The chemical structures of SiO2/Si interfaces were studied by photoelectron spectroscopy using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super Photon ring 8 GeV(SPring-8) and it is able to probe a depth of about 1.2 to 3 nm with energy resolution of 100 meV. On the other hand, high-brilliance hard X-ray with photon energy ranging from 6 to 10 keV is able to probe a depth of about 8.5 to 12.5 nm with energy resolution of 100 meV. Hard photoelectron spectroscopy are particularly useful for studying the composition and the chemical structure of transition layer at high-k dielectric/silicon interface. © World Scientific Publishing Company.

    DOI: 10.1142/S0129156406003680

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  36. Initial growth process of TiN films in ultrahigh-vacuum rapid thermal chemical vapor deposition Invited Reviewed International coauthorship International journal

    Okuda Y, Naito S, Nakatsuka O, Kondo H, Okuhara T, Sakai A, Zaima S, Yasuda Y

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 1A ) page: 49 - 53   2006.1

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    DOI: 10.1143/JJAP.45.49

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  37. Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation Invited Reviewed International coauthorship International journal

    Kondo H., Yanagi I., Sakashita M., Sakai A., Ogawa M., Zaima S.

    ECS Transactions   Vol. 3 ( 7 ) page: 287 - 289   2006

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:ECS Transactions  

    DOI: 10.1149/1.2355823

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  38. Ni suicide and germanide technology for contacts and metal gates in MOSFET applications Invited Reviewed International coauthorship International journal

    Zaima S., Nakatsuka O., Kondo H., Sakashita M., Sakai A., Ogawa M.

    ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings     page: 322 - 325   2006

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings  

    DOI: 10.1109/ICSICT.2006.306218

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  39. Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy Invited International coauthorship International journal

    Seko Akiyoshi, Watanabe Yukihiko, Kondo Hiroki, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 44 ( 10 ) page: 7582 - 7587   2005.10

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    We have studied the processes of local degradation through current leakage leading to breakdown in gate SiO<SUB>2</SUB> films by conductive atomic force microscopy (C-AFM). Electrical stress was applied to the SiO<SUB>2</SUB> films in the form of metal–oxide–semiconductor capacitors. Leakage current spots caused by holes trapped at stress-induced defects appeared in current images of the stressed SiO<SUB>2</SUB> films. During the C-AFM observation at the same area with a high electric field, currents at these leakage spots gradually increased and the breakdown finally occurred at these sites, whereas at background regions other than the leakage spots, leakage currents gradually decreased. In contrast, in the case of nonstressed SiO<SUB>2</SUB> films, the breakdown occurs without showing any predictive signs. Degradation and breakdown mechanisms depending on the stress condition are discussed.

    DOI: 10.1143/JJAP.44.7582

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  40. Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals Invited International coauthorship International journal

    Naito Shinya, Ueyama Tomonori, Kondo Hiroki, Sakashita Mitsuo, Sakai Akira, Ogawa Masaki, Zaima Shigeaki

    Japanese Journal of Applied Physics   Vol. 44 ( 7B ) page: 5687 - 5691   2005.7

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    A floating-gate memory with surface-nitrided Si nanocrystals buried in a SiO<SUB>2</SUB> matrix has been fabricated employing radical nitridation. Si nanocrystals with a number density higher than 1×10<SUP>12</SUP> cm<SUP>−2</SUP> and an average grain size smaller than 6 nm have been grown using an ultrathin amorphous Si layer predeposited on the SiO<SUB>2</SUB> surface. Since the radical nitridation of the formed Si nanocrystals effectively suppresses excess oxidation of nanocrystals during the control oxide formation, the Si nanocrystals have been successfully buried in the SiO<SUB>2</SUB> matrix without losing their number density, grain size and fine spherical shape. Electrical properties of the floating-gate memory were also examined. A flat band voltage shift larger than 1 V, which is consistent with the number density of Si nanocrystals, was observed in capacitance–voltage measurements.

    DOI: 10.1143/JJAP.44.5687

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  41. Preparation and evaluation of NiGe gate electrodes for metal-oxide- semiconductor devices Invited Reviewed International coauthorship International journal

    Kaneko Y., Kondo H., Sakai A., Zaima S., Yasuda Y.

    Proceedings - Electrochemical Society   Vol. 7   page: 1107 - 1111   2004.12

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Proceedings - Electrochemical Society  

    Next-generation metal-oxide-semiconductor (MOS) devices will require metal gate electrodes to eliminate some problems which conventional poly-Si gate electrodes have, such as gate depletion, high resistivity, chemical reaction with high-k dielectrics and so on. In this study, we have investigated the characteristics of NiGe gate electrodes for MOS devices. An interface between NiGe and gate SiO2 films was highly stable after post-deposition annealing at high temperature. The work function of the NiGe was found to depend on the annealing temperature and obtained to be ranging from 4.79 eV to 4.94 eV, which stands by the valence band side. The sheet resistance was an order of magnitude lower than that of the conventional poly-Si gate. Because of these features, NiGe is a promising candidate for PMOS device.

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  42. Behavior of Local Current Leakage in Stressed Gate SiO2 Films Analyzed by Conductive Atomic Force Microscopy Invited International coauthorship International journal

    Seko Akiyoshi, Watanabe Yukihiko, Kondo Hiroki, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 43 ( 7B ) page: 4683 - 4686   2004.7

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    We studied local leakage currents induced in stressed gate SiO<SUB>2</SUB> films and their time dependence by conductive atomic force microscopy (C-AFM). The current-voltage characteristics of the leakage currents detected in the C-AFM observations indicate Fowler-Nordheim tunneling currents enhanced by holes trapped in the stressed SiO<SUB>2</SUB> films. By repeated C-AFM observations at the same area, it was found that individual spot currents decrease at different rates. This result indicates hole detrapping with different time constants from the stress-induced defects that have different features.

    DOI: 10.1143/JJAP.43.4683

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  43. Detection and Characterization of Stress-Induced Defects in Gate SiO2 Films by Conductive Atomic Force Microscopy Invited International coauthorship International journal

    Watanabe Yukihiko, Seko Akiyoshi, Kondo Hiroki, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 43 ( 7B ) page: 4679 - 4682   2004.7

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    We have demonstrated the detection of nanometer-scale current-leakage sites in electrically stressed gate SiO<SUB>2</SUB> films using a conductive atomic force microscope (C-AFM). Prior to C-AFM observations, the gate SiO<SUB>2</SUB> films in metal-oxide-semiconductor capacitors were subjected to constant-current Fowler-Nordheim (FN) stress. Details of image contrasts and the relationship between the surface topography and the current image of the SiO<SUB>2</SUB> films were examined. Two types of contrast were clearly observed in the current image: a sharp bright spot reflecting local current leakage were caused by hole trapping at stress-induced defects and a fuzzy bright contrasts originating from the SiO<SUB>2</SUB> thickness fluctuation. The dependence of C-AFM images on the electron injection direction during FN stress application and the SiO<SUB>2</SUB> film thickness clearly reveals that the stress-induced defects are distributed in the region within 2.6 nm from the SiO<SUB>2</SUB>/Si substrate interface.

    DOI: 10.1143/JJAP.43.4679

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  44. Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition Invited International coauthorship International journal

    Naito Shinya, Satake Masaki, Kondo Hiroki, Sakashita Mitsuo, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 43 ( 6B ) page: 3779 - 3783   2004.6

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    Si nanocrystal growth using an amorphous Si (a-Si) layer pre-deposited on a SiO<SUB>2</SUB> surface has been performed by ultra-high-vacuum chemical vapor deposition (UHV-CVD). It has been shown that high-density Si nanocrystals are formed by Si<SUB>2</SUB>H<SUB>6</SUB> irradiation on to an a-Si surface and that Si atoms supplied from the a-Si layer contribute to the growth of Si nanocrystals. By changing the thickness of the a-Si layer, the number density and size of Si nanocrystals can be controlled systematically. A number density of 1.0×10<SUP>12</SUP> cm<SUP>−2</SUP> and an average diameter of 9.1 nm were achieved for Si nanocrystals on the SiO<SUB>2</SUB>/Si substrate in the case of using a 0.3-nm-thick a-Si layer. Si nanocrystals were successfully buried in a SiO<SUB>2</SUB> matrix by post deposition processes and their diameters were found to range from 6 to 10 nm.

    DOI: 10.1143/JJAP.43.3779

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  45. Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films Invited International coauthorship International journal

    Watanabe Yukihiko, Seko Akiyoshi, Kondo Hiroki, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 43 ( 4B ) page: 1843 - 1847   2004.4

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    We have investigated microscopically the current leakage characteristics of SiO<SUB>2</SUB> gate films in metal-oxide-semiconductor structure capacitors subjected to the Fowler-Nordheim (FN) constant current stress using a conductive atomic force microscope (C-AFM). Current images of C-AFM clearly reveal the leakage current spots in the samples in which the stress induced leakage current was confirmed by the macroscopic current-voltage (<I>I</I>-<I>V</I>) measurement. On the other hand, in the sample after the repeated macroscopic <I>I</I>-<I>V</I> measurement, there is a shift in threshold voltage for the appearance of current spots and its value directly corresponds to the voltage shift observed in the macroscopic capacitance-voltage measurements for this sample. The total number of current spots observable in the C-AFM scanned area critically depends on the substrate voltage: the spot number initially increases with the voltage to a certain value then decreases. The visibility of the current spot is well explained by the holes trapped locally at defect sites created in the stressed SiO<SUB>2</SUB>.

    DOI: 10.1143/JJAP.43.1843

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  46. Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2 Films Using Conductive Atomic Force Microscopy Invited International coauthorship International journal

    Watanabe Yukihiko, Seko Akiyoshi, Kondo Hiroki, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 43 ( 2A ) page: L144 - L147   2004.2

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    We have developed a method of microscopically analyzing the degradation of gate SiO<SUB>2</SUB> films in actual metal-oxide-semiconductor (MOS) devices by conductive atomic force microscopy (C-AFM). In C-AFM images of electrically stressed SiO<SUB>2</SUB> films, leakage current spots on a nanometer scale were successfully observed. The observed current spots show characteristic behaviors similar to the transient stress-induced leakage current which can be detected by macroscopic electrical measurements using MOS capacitors. The appearance of the current spots is discussed on the basis of the mechanism by which holes are trapped and detrapped by stress-induced defects in SiO<SUB>2</SUB> films.

    DOI: 10.1143/JJAP.43.L144

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  47. Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy Invited Reviewed International coauthorship International journal

    近藤 博基, 酒井 朗

    Japanese Journal Applied Physics Vol.43, No.7B     page: 4683 - 4686   2004

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  48. 電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析 Invited Reviewed International coauthorship International journal

    近藤 博基, 酒井 朗, 財満 鎭明, 安田 幸夫

    信学論 J87-C (8)     page: 616 - 624   2004

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  49. Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals Invited Reviewed International coauthorship International journal

    Naito S., Ueyama T., Kondo H., Sakashita M., Sakai A., Ogawa M., Zaima S.

    Digest of Papers - Microprocesses and Nanotechnology 2004     page: 170 - 171   2004

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Digest of Papers - Microprocesses and Nanotechnology 2004  

    DOI: 10.1109/imnc.2004.245778

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  50. Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy Invited Reviewed International coauthorship International journal

    近藤 博基, 酒井 朗

    Japanese Journal Applied Physics Vol.43, No.7B     page: 4679 - 4682   2004

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    CiNii Research

  51. Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films Invited Reviewed International coauthorship International journal

    近藤 博基, 酒井 朗

    Japanese Journal Applied Physics Vol.43, No.4B     page: 1843 - 1847   2004

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  52. Growth of silicon nanocrystals with high number density for floating dot memory Invited Reviewed International coauthorship International journal

    Naito S., Satake M., Kondo H., Sakashita M., Sakai A., Zaima S., Yasuda Y.

    Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003     page: 20 - 21   2003

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003  

    In this paper, we have developed a novel growth of Si nanocrystals by using molecular beam deposition and post-growth oxidation. Formation of Si dots with a high number density (about 1/spl times/10/sup 12/ cm/sup -2/) and a small grain size (less than 10 nm in diameter) has been demonstrated. Memory operations of devices using these Si dots were also examined.

    DOI: 10.1109/IMNC.2003.1268498

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  53. 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析 Invited Reviewed International coauthorship International journal

    近藤 博基, 酒井 朗, 財満 鎭明, 安田 幸夫

    Technical report of IEICE(信学技報) 103     page: 1 - 6   2003

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  54. Conductance Oscillations in Low-Dimensional Ion Implanted Regions Annealed by Rapid Thermal Annealing. Invited International coauthorship International journal

    Kondo Hiroki, Kaga Kazutaka, Baba Shin–ichi, Iwano Hirotaka, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 38 ( 4 A ) page: 1843 - 1846   1999

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    We have investigated the Coulomb blockade in gate-controlled hopping conduction systems made up of small-dimensional focused ion beam (FIB) implanted wires having a small non-implanted gap. Dot structures are formed in the gap by potential fluctuations caused by dispersed Ga impurities and implantation-induced defects. In the present work, the samples were subjected to two thermal treatment methods: furnace annealing at 600<SUP>°</SUP>C for 30 min and rapid thermal annealing (RTA) at 900<SUP>°</SUP>C for 30 s. In both samples, the conductance oscillates by varying the gate voltage at low temperatures, in which the nearest-neighbor hopping conduction is dominant. In the samples annealed by RTA, the oscillation amplitude becomes much larger compared with that of samples annealed at 600<SUP>°</SUP>C, which suggests that implantation-induced defects are annihilated by the thermal treatment at high temperatures. There coexist periodic and random peaks in the observed oscillation, which originate from the Coulomb blockade and hopping path changes, respectively. From obtained measurements, the dot size is estimated to be about 24 nm for the sample annealed at 600<SUP>°</SUP>C and 14 nm for the sample annealed at 900<SUP>°</SUP>C. The width of tunneling barrier of the sample annealed at 900<SUP>°</SUP>C was estimated to be about 14-17 nm.

    DOI: 10.1143/jjap.38.1843

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    CiNii Research

  55. Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation. Invited International coauthorship International journal

    Kondo Hiroki, Izumikawa Kenta, Sakurai Masakazu, Baba Shin–ichi, Iwano Hirotaka, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 38 ( 12 B ) page: 7222 - 7226   1999

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    We have fabricated Si metal-oxide-semiconductor field-effect transistors of small dimensions using focused-ion-beam (FIB) implantation and SiO<SUB>2</SUB> implantation masks with the width of 63-118 nm and have investigated the Coulomb blockade phenomena in these devices. The source and drain regions are formed by FIB implantation with a beam diameter of about 100 nm and the effective channel length is estimated to be 27-82 nm. Periodic oscillations of conductance, which are considered to be Coulomn blockade osillations, are observed at temperatures below 13 K. The measured oscillation period of V<SUB>G</SUB> is 1.2-3.1 V and the gate capacitance is estimated to be 0.053-0.14 aF for different channel lengths. Furthermore, it is found the the oscillation period of V<SUB>G</SUB> increases as the channel length increases, which indicates that the dot radius decreases with increasing channel length. Large negative magnetoresistance is distinctly observed at the top of oscillation peaks and, on the other hand, only weak magnetoresistance is obtained at the bottoms.

    DOI: 10.1143/jjap.38.7222

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  56. Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation Invited Reviewed International coauthorship International journal

    Kondo H., Baba S., Izumikawa K., Sakurai M., Zaima S., Yasuda Y.

    1999 International Microprocesses and Nanotechnology Conference     page: 126 - 127   1999

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:1999 International Microprocesses and Nanotechnology Conference  

    We have investigated Coulomb blockade phenomena in low-dimensional Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) with the very small length and very narrow width of channel regions, which are fabricated using e-beam lithography, dry etching and focused ion beam (FIB) implantation. Coulomb blockade phenomena have been found in Si nano-wires and narrow channel Si MOSFETs. In our previous study, the conduction mechanism and Coulomb blockade phenomena in one-dimensional p-type Si wires formed by FIB implantation has been reported. In the present study, we have successfully fabricated low-dimensional p-channel Si MOSFETs, whose source/drain regions with a width of 100 nm are formed by selective FIB implantation. Coulomb blockade phenomena and magnetoresistance are examined using the sample, as a function of channel length.

    DOI: 10.1109/IMNC.1999.797509

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  57. Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation. Invited International coauthorship International journal

    Kondo Hiroki, Iwano Hirotaka, Nakatsuka Osamu, Kaga Kazutaka, Zaima Shigeaki, Yasuda Yukio

    Japanese Journal of Applied Physics   Vol. 36 ( 6 SUPPL. B ) page: 4046 - 4048   1997.6

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    We have investigated the single-electron phenomena in p-Si hopping conduction systems with a gate electrode. The hopping conduction systems have been fabricated on Si(100) substrates by focused ion beam (FIB) implantation of Ga<SUP>+</SUP> ions with a beam diameter of 0.1 µ m. The samples show nearest-neighbor hopping (NNH) conduction below 30 K and the conductance is found to oscillate by changing the gate voltage in the NNH conduction region. From the period of conductance oscillation, the gate capacitance is estimated to be about 0.3-0.4 aF. The evaluated size of a dot based on the capacitance is close to the dimension of localized states in this hopping conduction system. A plateau is also observed in current-voltage characteristics between source and drain electrodes. It is considered that these phenomena originate from a Coulomb blockade and that the chain of localized hopping states acts as asymmetric multiple tunneling junctions.

    DOI: 10.1143/jjap.36.4046

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    CiNii Research

  58. Effects of Carbon Nanowalls (CNWs) Substrates on Soft Ionization of Low-Molecular-Weight Organic Compounds in Surface-Assisted Laser Desorption/Ionization Mass Spectrometry (SALDI-MS) International coauthorship International journal

    Sakai Ryusei, Ichikawa Tomonori, Kondo Hiroki, Ishikawa Kenji, Shimizu Naohiro, Ohta Takayuki, Hiramatsu Mineo, Hori Masaru

    NANOMATERIALS   Vol. 11 ( 2 ) page: 1 - 11   2021.2

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    DOI: 10.3390/nano11020262

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  59. Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures Reviewed

    Jaeho Kim, Keigo Takeda, Hirotomo Itagaki, Xue‐lun Wang, Shingo Hirose, Hisato Ogiso, Tetsuji Shimizu, Naoto Kumagai, Takayoshi Tsutsumi, Hiroki Kondo, Masaru Hori, Hajime Sakakita

    IEEJ Transactions on Electrical and Electronic Engineering   Vol. 15 ( 9 ) page: 1281 - 1287   2020.9

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    DOI: 10.1002/tee.23194

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  60. In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar<sup>+</sup>ions and Cl radicals Reviewed

    Hasegawa Masaki, Tsutsumi Takayoshi, Tanide Atsushi, Nakamura Shohei, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   Vol. 38 ( 4 )   2020.7

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    DOI: 10.1116/6.0000124

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  61. In-Liquid Plasma Synthesis of Nanographene with a Mixture of Methanol and 1-Butanol Reviewed

    Atsushi Ando, Kenji Ishikawa, Keigo Takeda, Takayuki Ohta, Masafumi Ito, Mineo Hiramatsu, Hiroki Kondo, Makoto Sekine, Masaru Hori

    ChemNanoMat   Vol. 6 ( 4 ) page: 604 - 609   2020.4

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    © 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim Nanometer-size graphene sheets (nanographene) were synthesized by the in-liquid plasma method employing a mixture of alcohols. Pure methanol in-liquid plasma was found to not synthesize any nanographene. Pure ethanol synthesized nanographene with high crystallinity. Highly crystalline nanographene with a narrow full width-half maximum of the Raman scattering G-band (FWHMG) was obtained by mixing 1-butanol with methanol. This is due to the formation of carbon ring structures being inhibited by the addition of methanol. The ratio of added methanol determined the nanographene crystallinity and yield under a trade-off relationship, allowing the crystallinity and nanographene yield to be controlled by controlling the ratio. Gas chromatography-mass spectrometric analysis of by-products in the liquids’ supernatant showed that the crystallinity of the synthesized nanographene correlated with the ratio of carbon over oxygen of the alcohol precursors (C/O), i. e., the amount of hydroxyl groups in the liquids, and hence controlling the C/O ratio can be used to control the graphene crystallinity in the in-liquid plasma synthesis.

    DOI: 10.1002/cnma.201900676

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  62. Gas-phase and film analysis of hydrogenated amorphous carbon films: Effect of ion bombardment energy flux on sp<sup>2</sup> carbon structures Reviewed

    Sugiura Hirotsugu, Ohashi Yasuyuki, Ishikawa Kenji, Kondo Hiroki, Kato Toshiaki, Kaneko Toshiro, Takeda Keigo, Tsutsumi Takayoshi, Hayashi Toshio, Sekine Makoto, Hori Masaru

    Diamond and Related Materials   Vol. 104   2020.4

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    DOI: 10.1016/j.diamond.2019.107651

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  63. Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study Reviewed International coauthorship

    Yusuke Fukunaga, Roberto C. Longo, Peter L. G. Ventzek, Barton Lane, Alok Ranjan, Gyeong S. Hwang, Gregory Hartmann, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori1

    Journal of Applied Physics   Vol. 127 ( 2 )   2020.1

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    DOI: 10.1063/1.5127863

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  64. Characterization of a microsecond pulsed non-equilibrium atmospheric pressure Ar plasma using laser scattering and optical emission spectroscopy Reviewed International coauthorship

    Fengdong JIA, Yong WU, Qi MIN, Maogen SU, Keigo TAKEDA, Kenji ISHIKAWA, Hiroki KONDO, Makoto SEKINE, Masaru HORI and Zhiping ZHONG

    Plasma Science and Technology   Vol. 22 ( 6 )   2020

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    DOI: 10.1088/2058-6272/ab84e2

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  65. Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate Reviewed

    Yasuhiro Isobe, Takayuki Sakai, Kyoichi Suguro, Naoto Miyashita, Hiroki Kondo, Kenji Ishikawa, Amalraj Frank Wilson, Naohiro Shimizu, Osamu Oda, Makoto Sekine, and Masaru Hori

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   Vol. 37 ( 6 )   2019.11

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    DOI: 10.1116/1.5114831

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  66. Oxidative stress-dependent and -independent death of glioblastoma cells induced by non-thermal plasma-exposed solutions Reviewed

    Tanaka Hiromasa, Mizuno Masaaki, Katsumata Yuko, Ishikawa Kenji, Kondo Hiroki, Hashizume Hiroshi, Okazaki Yasumasa, Toyokuni Shinya, Nakamura Kae, Yoshikawa Nobuhisa, Kajiyama Hiroaki, Kikkawa Fumitaka, Hori Masaru

    SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page: 13657   2019.9

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    DOI: 10.1038/s41598-019-50136-w

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  67. Atmospheric Pressure Plasma-Treated Carbon Nanowalls' Surface-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (CNW-SALDI-MS) Reviewed International coauthorship International journal

    Takayuki Ohta, Hironori Ito, Kenji Ishikawa, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori

    Special Issue "Plasma Processing for Carbon-based Materials   Vol. 5 ( 3 )   2019.9

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    DOI: 10.3390/c5030040

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  68. Plasma-activated solution alters the morphological dynamics of supported lipid bilayers observed by high-speed atomic force microscopy Reviewed

    Sotaro Yamaoka, Hiroki Kondo, Hiroshi Hashizume, Kenji Ishikawa, Hiromasa Tanaka, Masaru Hori

    Applied Physics Express   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab1a58

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  69. Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas Reviewed

    Yan Zhang, Kenji Ishikawa, Miran Mozetič, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Masaru Hori

    Plasma Processes and Polymers   Vol. 16 ( 6 )   2019.6

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    DOI: 10.1002/ppap.201800175

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  70. Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

    Yasuhiro Isobe, Takayuki Sakai, Naoharu Sugiyama, Ichiro Mizushima, Kyoichi Suguro, Naoto Miyashita, Yi Lu, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, Masaru Hori

    Journal of Vacuum Science & Technology B   Vol. 37 ( 3 )   2019.5

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    DOI: 10.1116/1.5083970

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  71. Facile synthesis of SnO2-graphene composites employing nonthermal plasma and SnO2 nanoparticles-dispersed ethanol Reviewed

    Borude Ranjit R, Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 17 )   2019.4

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    DOI: 10.1088/1361-6463/ab03c4

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  72. A 65-nm CMOS Fully Integrated Analysis Platform Using an On-Chip Vector Network Analyzer and a Transmission-Line-Based Detection Window for Analyzing Circulating Tumor Cell and Exosome Reviewed

    Niitsu Kiichi, Nakanishi Taiki, Murakami Shunya, Matsunaga Maya, Kobayashi Atsuki, Karim Nissar Mohammad, Ito Jun, Ozawa Naoya, Hase Tetsunari, Tanaka Hiromasa, Sato Mitsuo, Kondo Hiroki, Ishikawa Kenji, Odaka Hidefumi, Hasegawa Yoshinori, Hori Masaru, Nakazato Kazuo

    IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS   Vol. 13 ( 2 ) page: 470-479 - 479   2019.4

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    DOI: 10.1109/TBCAS.2018.2882472

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  73. Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls International coauthorship International journal

    Imai Shun, Naito Kenichi, Kondo Hiroki, Cho Hyung Jun, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 10 )   2019.3

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    DOI: 10.1088/1361-6463/aaf8e0

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  74. Control of sp2-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH4/H2 plasma-enhanced chemical vapor deposition Reviewed International coauthorship International journal

    Hirotsugu Sugiura, Lingyun Jia, Yasuyuki Ohashi, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 58 ( 3 )   2019.3

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    Amorphous carbon (a-C) thin films were deposited under the control of C-2 radical density using radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) with CH4/H-2 plasma. By actinometric monitoring of C-2 emission intensities, the plasma parameters were precisely controlled by changing in CH4-containing plasma excitation power independent of H-2 plasma excitation. The control of the incorporation of sp2-C clusters in the a-C films during the a-C film depositions is demonstrated by tailoring Raman positions vs. full widths at half maxima for the G band around 1580 cm(-1) to the RI-PECVD parameters. (C) 2019 The Japan Society of Applied Physics

    DOI: 10.7567/1347-4065/aafd49

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  75. Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition Reviewed International coauthorship International journal

    Hirotsugu Sugiura, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Masaru Hori

    C-Journal of Carbon Research   Vol. 5 ( 1 )   2019.3

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    DOI: 10.3390/c5010008

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  76. Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition Reviewed International coauthorship International journal

    Masakazu Tomatsu, Mineo Hiramatsu, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori

    Journal of Carbon Research   Vol. 5 ( 1 )   2019.3

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    DOI: 10.3390/c5010007

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  77. Real-time control of a wafer temperature for uniform plasma process International coauthorship International journal

    T. Tsutsumi, Y. Fuknaga, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    2018 International Symposium on Semiconductor Manufacturing (ISSM)   Vol. 2018-December   2019.2

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    DOI: 10.1109/ISSM.2018.8651183

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  78. Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries Reviewed

    Ranjit R. Borude, Hirotsugu Sugiura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Nobuyuki Ikarashi, Masaru Hori

    ACS Applied Nano Materials   Vol. 2 ( 2 ) page: 649 - 654   2019.2

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  79. Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds Reviewed International coauthorship International journal

    Tomonori Ichikawa, Suiki Tanaka, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori

    Applied Physics Express   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aaf469

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  80. Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system Reviewed

    Fukunaga Yusuke, Tsutsumi Takayoshi, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 2 )   2019.2

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    DOI: 10.7567/1347-4065/aaf92a

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  81. Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma Reviewed International coauthorship International journal

    Ranjit R. Borude, Hirotsugu Sugiura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Jeon Geon Han, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 58 ( SA )   2019.2

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    DOI: 10.7567/1347-4065/aaec87

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  82. Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C2F6/H2 plasma-enhanced chemical vapor deposition Reviewed International coauthorship International journal

    Shun Imai, Hiroki Kondo, Cho Hyungjun, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Mineo Hiramatsu, Masaru Hori

    Applied Physics Express   Vol. 12 ( 1 )   2019.1

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    DOI: 10.7567/1882-0786/aaf0ab

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  83. Liquid dynamics in response to an impinging low-temperature plasma jet Reviewed International coauthorship International journal

    Timothy R. Brubaker, Kenji Ishikawa, Hiroki Kondo, Takayoshi Tsutsumi, Hiroshi Hashizume, Hiromasa Tanaka, Sean D. Knecht, Sven G. Bilen, Masaru Hori

    Journal of Physics D: Applied Physics   Vol. 52 ( 7 )   2018.12

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    DOI: 10.1088/1361-6463/aaf460

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  84. Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) Reviewed International coauthorship International journal

    Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, Masaru Hori

    AIP Advances   Vol. 8 ( 11 )   2018.11

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    DOI: 10.1063/1.5050819

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  85. Oriented Carbon Nanostructures by Plasma Processing: Recent Advances and Future Challenges Reviewed International coauthorship

    Santhosh Neelakandan M, Filipic Gregor, Tatarova Elena, Baranov Oleg, Kondo Hiroki, Sekine Makoto, Hori Masaru, Ostrikov Kostya, Ke, Cvelbar Uros

    MICROMACHINES   Vol. 9 ( 11 )   2018.11

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    DOI: 10.3390/mi9110565

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  86. Time Evolution Of Reactive Oxygen Nitrogen Species in Plasma-Activated Essential Media and Water International coauthorship International journal

    Brubaker Timothy, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    2017 IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS)     2018.10

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    DOI: 10.1109/PLASMA.2017.8496057

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  87. Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300-500°C Reviewed International coauthorship International journal

    Takashi Kako, Zecheng Liu, Kenji Ishikawa, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori

    Vacuum   Vol. 156   page: 219 - 223   2018.10

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    DOI: 10.1016/j.vacuum.2018.07.040

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  88. Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching Reviewed International coauthorship International journal

    Yan Zhang, Masato Imamura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Masaru Hori

    Japanese Journal of Applied Physics   Vol. 57 ( 10 )   2018.10

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    DOI: 10.7567/JJAP.57.106502

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  89. Oxygen reduction reaction properties of nitrogen-incorporated nanographenes synthesized using in-liquid plasma from mixture of ethanol and iron phthalocyanine Reviewed

    Amano Tomoki, Kondo Hiroki, Takeda Keigo, Ishikawa Kenji, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.040303

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  90. Nanographene synthesized in triple-phase plasmas as a highly durable support of catalysts for polymer electrolyte fuel cells Reviewed

    Amano Tomoki, Kondo Hiroki, Takeda Keigo, Ishikawa Kenji, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.045101

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  91. Nanographene synthesis employing in-liquid plasmas with alcohols or hydrocarbons Reviewed

    Ando Atsushi, Ishikawa Kenji, Kondo Hiroki, Tsutsumi Takayoshi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 2 )   2018.2

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    DOI: 10.7567/JJAP.57.026201

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  92. Rapid growth of micron-sized graphene flakes using in-liquid plasma employing iron phthalocyanine-added ethanol Reviewed

    Amano Tomoki, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Takeda Keigo, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 1 )   2018.1

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    DOI: 10.7567/APEX.11.015102

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  93. Dynamic analysis of reactive oxygen nitrogen species in plasma-activated culture medium by UV absorption spectroscopy Reviewed International coauthorship

    Brubaker Timothy R., Ishikawa Kenji, Takeda Keigo, Oh Jun-Seok, Kondo Hiroki, Hashizume Hiroshi, Tanaka Hiromasa, Knecht Sean D., Bilen Sven G., Hori Masaru

    JOURNAL OF APPLIED PHYSICS   Vol. 122 ( 21 )   2017.12

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    DOI: 10.1063/1.4999256

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  94. Surface roughening of photoresist after change of the photon/radical and ion treatment sequence Reviewed

    Zhang Yan, Takeuchi Takuya, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Sekine Makoto, Hori Masaru

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 35 ( 6 )   2017.11

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    DOI: 10.1116/1.4994218

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  95. Intracellular responses to reactive oxygen and nitrogen species, and lipid peroxidation in apoptotic cells cultivated in plasma-activated medium Reviewed

    Furuta Ryo, Kurake Naoyuki, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    PLASMA PROCESSES AND POLYMERS   Vol. 14 ( 11 )   2017.11

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    DOI: 10.1002/ppap.201700123

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  96. High-durability catalytic electrode composed of Pt nanoparticle-supported carbon nanowalls synthesized by radical-injection plasma-enhanced chemical vapor deposition Reviewed

    Imai Shun, Kondo Hiroki, Cho Hyungjun, Kano Hiroyuki, Ishikawa Kenji, Sekine Makoto, Hiramatsu Mineo, Ito Masafumi, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 40 )   2017.10

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    DOI: 10.1088/1361-6463/aa8131

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  97. Lipid droplets exhaustion with caspases activation in HeLa cells cultured in plasma-activated medium observed by multiplex coherent anti-Stokes Raman scattering microscopy Reviewed

    Furuta Ryo, Kurake Naoyuki, Takeda Keigo, Ishikawa Kenji, Ohta Takayuki, Ito Masafumi, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    BIOINTERPHASES   Vol. 12 ( 3 )   2017.9

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    DOI: 10.1116/1.4997170

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  98. Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation Reviewed

    Liu Zecheng, Imamura Masato, Asano Atsuki, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 8 )   2017.8

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    DOI: 10.7567/APEX.10.086502

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  99. Temperature dependence of protection layer formation on organic trench sidewall in H-2/N-2 plasma etching with control of substrate temperature Reviewed

    Fukunaga Yusuke, Tsutsumi Takayoshi, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.076202

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  100. Intracellular-molecular changes in plasma-irradiated budding yeast cells studied using multiplex coherent anti-Stokes Raman scattering microscopy Reviewed

    Furuta Ryo, Kurake Naoyuki, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Kondo Hiroki, Ohta Takayuki, Ito Masafumi, Sekine Makoto, Hori Masaru

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   Vol. 19 ( 21 ) page: 13438-13442   2017.6

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    DOI: 10.1039/c7cp00489c

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  101. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 degrees C Reviewed International coauthorship International journal

    Shinnosuke Takai, Yi Lu, Osamu Oda, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    The InN films were deposited on GaN surfaces at a low temperature of 200 degrees C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). The REMOCVD system can provide N radicals from the plasma of a N-2-H-2 mixture gas without using ammonia. Two types of GaN substrate, bulk GaN and GaN on Si(111), were used. The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.06HE08

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  102. Spatial profiles of interelectrode electron density in direct current superposed dual-frequency capacitively coupled plasmas Reviewed

    Ohya Yoshinobu, Ishikawa Kenji, Komuro Tatsuya, Yamaguchi Tsuyoshi, Takeda Keigo, Kondo Hiroki, Sekine Makoto, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 15 )   2017.3

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    DOI: 10.1088/1361-6463/aa60f7

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  103. Characteristics of optical emissions of arc plasma processing for high-rate synthesis of highly crystalline single-walled carbon nanotubes Reviewed

    Ando Atsushi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Suzuki Tomoko, Inoue Sakae, Ando Yoshinori, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 3 )   2017.3

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    DOI: 10.7567/JJAP.56.035101

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  104. Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl-2 plasma etching of GaN Reviewed

    Liu Zecheng, Pan Jialin, Asano Atsuki, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 2 )   2017.2

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    DOI: 10.7567/JJAP.56.026502

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  105. Absolute density of precursor SiH3 radicals and H atoms in H-2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films Reviewed

    Abe Yusuke, Ishikawa Kenji, Takeda Keigo, Tsutsumi Takayoshi, Fukushima Atsushi, Kondo Hiroki, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS LETTERS   Vol. 110 ( 4 )   2017.1

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    DOI: 10.1063/1.4974821

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  106. Atomic layer etching of SiO2 by alternating an O-2 plasma with fluorocarbon film deposition Reviewed

    Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru, Zaitsu Masaru, Kobayashi Akiko, Nozawa Toshihisa, Kobayashi Nobuyoshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 35 ( 1 )   2017

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    DOI: 10.1116/1.4971171

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  107. TIME EVOLUTION OF REACTIVE OXYGEN NITROGEN SPECIES IN PLASMA-ACTIVATED ESSENTIAL MEDIA AND WATER Reviewed International coauthorship

    Brubaker Timothy, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    2017 IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS)     page: .   2017

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  108. Microfluidic Transport Through Microsized Holes Treated by Nonequilibrium Atmospheric-Pressure Plasma Reviewed International coauthorship International journal

    Takumi Ito, Kenji Ishikawa, Daisuke Onoshima, Naoto Kihara, Kentaro Tatsukoshi, Hidefumi Odaka, Hiroshi Hashizume, Hiromasa Tanaka, Hiroshi Yukawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Yoshinobu Baba, Masaru Hori

    IEEE TRANSACTIONS ON PLASMA SCIENCE   Vol. 44 ( 12 ) page: 3060 - 3065   2016.12

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    In the field of microfluidics, it is possible to facilitate liquid transport through microsized holes with large slip lengths by lowering the friction at the interface between the flow and the inner surface of the holes. In this paper, we discuss the use of nonequilibrium atmospheric-pressure plasma to modify the surface wettability of microsized holes in glass substrates that are similar to those used as flow channels in glass microfiltration devices. In our experiments, liquid transport flows were driven by internal Laplace pressure differences based on the surface tensions of droplets placed on the front and back sides of the tested substrates.

    DOI: 10.1109/TPS.2016.2571721

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  109. Effects of Radical Species on Structural and Electronic Properties of Amorphous Carbon Films Deposited by Radical-Injection Plasma-Enhanced Chemical Vapor Deposition Reviewed International coauthorship International journal

    Lingyun Jia, Hirotsugu Sugiura, Hiroki Kondo, Keigo Takeda, Kenji Ishikawa, Osamu Oda, Makoto Sekine, Mineo Hiramatsu, Masaru Hori

    PLASMA PROCESSES AND POLYMERS   Vol. 13 ( 7 ) page: 730 - 736   2016.7

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    Amorphous carbon (a-C) films are deposited using a radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) system employing a mixture of H-2 and CH4 gases. Variations in the structural and electronic properties of the resulting films with changes in the residence times of radical species and molecules are investigated by varying the total gas flow rate from 50 to 400sccm. With decreasing residence time, the deposition rate is found to gradually increase, reaching a maximum value at a residence time of 6ms, after which a decrease was observed. Optical emission spectra showed that the relative intensity of the CH emission increased with decreasing residence time. These results indicate a change in the dominant radical species resulting from suppression of the dissociation of radicals and molecules. Increasing amorphization and an obvious increase in the Tauc gap from 0.6 to 0.9eV are found with decreasing residence time, while there is little change in the hydrogen content of the films. From these data, it is evident that control over the structural properties and optical bandgap of a-C films can be realized by optimizing the distribution of radical species.

    DOI: 10.1002/ppap.201500229

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  110. Effect of gas residence time on near-edge X-ray absorption fine structures of hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition Reviewed International coauthorship International journal

    Lingyun Jia, Hirotsugu Sugiura, Hiroki Kondo, Keigo Takeda, Kenji Ishikawa, Osamu Oda, Makoto Sekine, Mineo Hiramatsu, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 4 )   2016.4

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    In hydrogenated amorphous carbon films, deposited using a radical-injection plasma-enhanced chemical vapor deposition system, the chemical bonding structure was analyzed by near-edge X-ray absorption fine-structure spectroscopy. With a change in the residence times of source gases in a reactor, whereby total gas flow rates of H-2/CH4 increased from 50 to 400 sccm, sp(2)-C fractions showed the minimum value at 150 sccm, while H concentration negligibly changed according to the results of secondary ion mass spectroscopy. On the other hand, widths of sigma* C-C peaks increased with decreasing gas residence time, which indicates an increase in the fluctuation of bonding structures. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.040305

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  111. Real-time temperature monitoring of Si substrate during plasma processing and its heat-flux analysis Reviewed International coauthorship International journal

    Takayoshi Tsutsumi, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 1 )   2016.1

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    Actual Si wafer temperatures during plasma etching processes were temporally measured using a real-time wafer-temperature monitoring system with autocorrelation-type frequency-domain low-coherence interferometry. Indeed, the Si wafer temperature, which was 20 degrees C before the process, rapidly increased in 10 s. Then, the temperature rise gradually slowed, but continued to increase and reached 45 degrees C after 600 s. This can be due to the fact that there exists a heat source for the wafer other than the plasma. Reasonably, the Si wafer was found to be sensitive to the temperature of the disk covering the area around the wafer, i.e., the focus ring. Usually, the temperature of the focus ring is not controlled and causes the radial distribution of Si wafer temperature. Consequently, the Si wafer temperature should be controlled with the temperature increase of other heat sources, especially the focus ring. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.01AB04

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  112. Impact of synergism of nitrite and hydrogen peroxide on cell survivals in Plasma-Activated-Medium (PAM) Reviewed

    Naoyuki Kurake, Hiromasa Tanaka, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Fumiaki Kikkawa, Takashi Kondo, Masaaki Mizuno, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    2016 43RD IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS)     2016

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  113. Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching Reviewed International coauthorship International journal

    Takayoshi Tsutsumi, Yusuke Fukunaga, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, Masaru Hori

    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING   Vol. 28 ( 4 ) page: 515 - 520   2015.11

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    A wafer temperature feedback control system during plasma processing with rapid, precise, and real-time temperature monitoring employing frequency-domain low-coherence interferometry was developed. To keep the temperature within a specific range, plasma was actively switched on and off, controlled by signals from a monitoring system. It was applied to an organic film etching process with an H-2 and N-2 mixture gas plasma. The organic material etching yield from atomic hydrogen has a relatively high sensitivity to temperature, and a constant temperature is required to achieve precise etching profiles. This system maintained the wafer temperature within a few degrees for H-2/N-2 plasma discharges. Duty ratios per discharge gradually decreased because the temperature of the chamber component parts around the wafer increased. The trench width etched in the organic film increased with increasing wafer temperature. This is because of a temperature dependence balance between the etching reaction and protection film formation on the trench sidewall.

    DOI: 10.1109/TSM.2015.2470554

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  114. High sensitivity of a carbon nanowall-based sensor for detection of organic vapours Reviewed International coauthorship

    P. Slobodian, U. Cvelbar, P. Riha, R. Olejnik, J. Matyas, G. Filipič, H. Watanabe, S. Tajima, H. Kondo, M. Sekine, M. Hori

    RSC Advances   Vol. 5 ( 110 ) page: 90515 - 90520   2015.10

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    The high sensitivity in response, selectivity and reversibility was achieved on a carbon nanowall-based sensor for the vapor detection of volatile organic compounds, which were tested by an electrical resistance method during adsorption and desorption cycles. The maze-like structure of two different carbon nanowalls with wall-to-wall distances of 100 nm and 300 nm were prepared on a silicone substrate by a plasma-enhanced chemical vapor deposition system while varying processing parameters. Four organic vapors: iso-pentane
    diethyl ether
    acetone
    and methanol
    were selected in order to evaluate the relationship between the change in resistance, molecular weight of the adsorbent and the polarity. The results show that the carbon nanowalls with average wall distance 100 nm exhibit substantially enhanced electrical response to all volatile organic compound vapors used in comparison with the nanowalls with 300 nm wall distance as well as entangled multiwall carbon nanotube networks.

    DOI: 10.1039/c5ra12000d

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  115. Development of Microelectrode Arrays Using Electroless Plating for CMOS-Based Direct Counting of Bacterial and HeLa Cells Reviewed International coauthorship International journal

    Kiichi Niitsu, Shoko Ota, Kohei Gamo, Hiroki Kondo, Masaru Hori, Kazuo Nakazato

    IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS   Vol. 9 ( 5 ) page: 607 - 619   2015.10

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    The development of two new types of high-density, electroless plated microelectrode arrays for CMOS-based high-sensitivity direct bacteria and HeLa cell counting are presented. For emerging high-sensitivity direct pathogen counting, two technical challenges must be addressed. One is the formation of a bacteria-sized microelectrode, and the other is the development of a high-sensitivity and high-speed amperometry circuit. The requirement for microelectrode formation is that the gold microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the dimensions of the microelectrodes on a CMOS sensor chip in this work were successfully reduced to 1.2 mu M x 2.05 mu M. This is 1/20th of the smallest size reported in the literature. Since a bacteria-sized microelectrode has a severe limitation on the current flow, the amperometry circuit has to have a high sensitivity and high speed with low noise. In this work, a current buffer was inserted to mitigate the potential fluctuation. Three test chips were fabricated using a 0.6-mu M CMOS process: two with 1.2 mu M x 2.05 mu M (1024 x 1024 and 4 x 4) sensor arrays and one with 6-mu M square (16 x 16) sensor arrays; and the microelectrodes were formed on them using electroless plating. The uniformity among the 1024 1024 electrodes arranged with a pitch of 3.6 mu M x 4.45 mu M was optically verified. For improving sensitivity, the trenches on each microelectrode were developed and verified optically and electrochemically for the first time. Higher sensitivity can be achieved by introducing a trench structure than by using a conventional microelectrode formed by contact photolithography. Cyclic voltammetry (CV) measurements obtained using the 1.2 mu M x 2.05 mu M 4 x 4 and 6-mu M square 16 x 16 sensor array with electroless-plated microelectrodes successfully demonstrated direct counting of the bacteria-sized microbeads and HeLa cells.

    DOI: 10.1109/TBCAS.2015.2479656

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    PubMed

  116. Suppression of plasma-induced damage on GaN etched by a Cl-2 plasma at high temperatures Reviewed International coauthorship International journal

    Zecheng Liu, Jialin Pan, Takashi Kako, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 54 ( 6 )   2015.6

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    Plasma-induced damage (PID) during plasma-etching processes was suppressed by the application of Cl-2 plasma etching at an optimal temperature of 400 degrees C, based on results of evaluations of photoluminescence (PL), stoichiometric composition, and surface roughness. The effects of ions, photons, and radicals on damage formation were separated from the effects of plasma using the pallet for plasma evaluation (PAPE) method. The PID was induced primarily by energetic ion bombardments at temperatures lower than 400 degrees C and decreased with increasing temperature. Irradiations by photons and radicals were enhanced to form the PID and to develop surface roughness at temperatures higher than 400 degrees C. Consequently, Cl-2 plasma etching at 400 degrees C resulted optimally in low damage and a stoichiometric and smooth GaN surface. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.06GB04

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  117. シリコン薄膜形成プロセスにおけるプラズマ中の水素原子の計測とその挙動 Reviewed

    堀勝, 阿部祐介, 竹田圭吾, 石川健治, 近藤博基, 関根誠, 韓銓建

    プラズマ・核融合学会誌   Vol. 91 ( 5 ) page: 317   2015.5

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  118. Measurement of Atomic Hydrogens and their Behaviors in Silicon Thin Film Plasma Processes for Solar Cells Reviewed

    HORI Masaru, ABE Yusuke, TAKEDA Keigo, ISHIKAWA Kenji, KONDO Hiroki, SEKINE Makoto, HAN G. Jeon

      Vol. 91 ( 5 ) page: 317-322   2015.5

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  119. CF3+ fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C5F10O, in gas phase Reviewed International coauthorship International journal

    Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 54 ( 4 )   2015.4

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    The gas phase fragmentations of perfluoro-propyl-vinyl ether (PPVE, C5F10O) are studied experimentally. Dominant fragmentations of PPVE are found to be the result of a dissociative ionization reaction, i.e., CF3+ via direct bond cleavage, and C2F3O- and C3F7O- via electron attachment. Regardless of the appearance energy of around 14.5 eV for the dissociative ionization of CF3+, the observed ion efficiency for the CF3+ ion was extremely large the order of 10(-20)cm(-2), compared with only 10(-21)cm(-2) for the other channels. PPVE characteristically generated CF3+ as the largest abundant ion are advantageous for use of feedstock gases in plasma etching processes. (c) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.040301

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  120. Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton Reviewed International coauthorship International journal

    Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 54 ( 4 )   2015.4

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    Etching rates of silicon nitrides (SiN), SiO2, and poly-Si films for CH2F2 plasmas diluted with rare gases are presented by comparing the effects of flow rates of CH2F2 and dilution gases (Ar and Kr). The SiO2 etching rate was considered to be controlled by ion fluxes of the incident CHF2+ and CH2F+ under the conditions for the selective etching of SiO2 and SiN over poly-Si. Interestingly, the SiN etching rate was considerably affected by the dilution gas used. The SiN surface reaction was promoted by F-rich chemistry in the Ar-diluted CH2F2 plasma with a relatively high density of F atoms. (c) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.040303

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  121. Hydrofluorocarbon ion density of argon- or krypton-diluted CH2F2 plasmas: generation of CH2F+ and CHF2+ by dissociative-ionization in charge exchange collisions Reviewed International coauthorship International journal

    Yusuke Kondo, Yudai Miyawaki, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 48 ( 4 )   2015.2

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    Ion densities of CH2F+ and CHF2+ were determined by dissociative ionization pathways in channels of charge exchange collisions, i.e. CH2F2 + M+--&gt; CH2F+ + F + M* and CHF2+ + H + M* [M = Ar, Kr] in CH2F2 plasmas diluted by a rare gas [M]. These channels simultaneously generated counter fragments of charge-neutral H and F atoms of interest for plasma etching processes. In Ar-diluted plasmas, CH2F+ ions predominated due to dissociative ionization between Ar+ [ca. 15.8 eV] and C-F appearance [dissociative ionization] energy [ca. 16 eV] to form CH2F+. In contrast, for Kr-diluted plasmas, C-H appearance energy [ca. 13.8 eV] predominated to produce a larger amount of CHF2+ ions due to a similar channel for charge exchange collisions between Kr+[ca. 14 eV] and CH2F2. Thus, adding the ratio of Ar and Kr gas to CH2F2 plasmas provided control over the fraction of CH2F+ and CHF2+ ion densities.

    DOI: 10.1088/0022-3727/48/4/045202

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  122. Robust characteristics of semiconductor-substrate temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry Reviewed International coauthorship International journal

    Takayoshi Tsutsumi, Takayuki Ohta, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori, Masafumi Ito

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 54 ( 1 )   2015.1

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    We have compared in detail the robust characteristics of an autocorrelation-type frequency-domain low-coherence interferometry (ACT-FD-LCI) system without a reference mirror with those of the conventional frequency-domain low-coherence interferometry (FD-LCI) system with a reference mirror. The standard deviation of temperature measurement was less than 0.04 degrees C at temperatures below 550 degrees C for a typical thickness of 480 mu m, as determined from the measured optical path length. The robustness of performance against disturbances has been markedly improved, as compared with a precision of 0.28 degrees C in the conventional FD-LCI system with the reference mirror. In particular, we have confirmed that the ACT-FD-LCI system has a large tolerance to disturbances due to dispersion and changes in the polarization of the signal light owing to the removal of the reference mirror. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.01AB03

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  123. Carbon nanowall scaffold to control culturing of cervical cancer cells Reviewed

    Hitoshi Watanabe, Hiroki Kondo, Yukihiro Okamoto, Mineo Hiramatsu, Makoto Sekine, Yoshinobu Baba, and Masaru Hori

    Applied Physics Letters   Vol. 105   2014.12

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    DOI: 10.1063/1.4902054

  124. Recovery of atom density drift caused by change in reactor wall conditions by real-time autonomous control Reviewed

    Toshiya Suzuki, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori

    Journal of Physics D: Applied Physics   Vol. 47 ( 42 )   2014.9

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    DOI: 10.1088/0022-3727/47/42/422002

  125. Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma - effect of TMG flow rate and VHF power Reviewed

    Yi Lu, Hiroki Kondo, Kenji Ishikawa, Osamu Oda, Keigo Takeda, Makoto Sekine, Hiroshi Amano, and Masaru Hori

    Journal of Crystal Growth   Vol. 391   page: 97-103   2014.4

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    DOI: 10.1016/j.jcrysgro.2014.01.014

  126. Hierarchical regrowth of flowerlike nanographene sheets on oxygen-plasma-treated carbon nanowalls Reviewed

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    Appl. Phys. Express   Vol. 7 ( 4 ) page: 046201   2014.3

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    DOI: 10.7567/APEX.7.046201

  127. Effects of nitrogen plasma post-treatment on electrical conduction of carbon nanowalls Reviewed

    Hyung Jun Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53 ( 4 ) page: 040307   2014.3

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    DOI: 10.7567/JJAP.53.040307

  128. Nanostructure modification to carbon nanowall surface employing hydrogen peroxide solution Reviewed

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53 ( 4 ) page: 040305:1-4   2014.3

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    DOI: 10.7567/JJAP.53.040305

  129. Spatiotemporal behaviors of absolute density of atomic oxygen in a planar type of Ar/O2 non-equilibrium atmospheric pressure plasma jet Reviewed

    Fengdong Jia, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Jagath Kularatne, Hiroki Kondo, Makoto Sekine and Masaru Hori

    Plasma Source Sci. Technol. 23 (Mar. 3, 2014) 025004     2014.3

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    DOI: 10.1088/0963-0252/23/2/025004

  130. A CMOS Sensor Platform with 1.2 mu m x 2.05 mu m Electroless-Plated 1024 x 1024 Microelectrode Array for High-Sensitivity Rapid Direct Bacteria Counting Reviewed

    Ota Shoko, Niitsu Kiichi, Kondo Hiroki, Hori Masaru, Nakazato Kazuo

    2014 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS)     page: 460-463   2014

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  131. Live Demonstration: A CMOS Sensor Platform with 1.2 mu m x 2.05 mu m Electroless-Plated 1024 x 1024 Microelectrode Array for High-Sensitivity Rapid Direct Bacteria Counting Reviewed

    Shoko Ota, Kiichi Niitsu, Hiroki Kondo, Masaru Hori, Kazuo Nakazato

    2014 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS)     page: 185 - 185   2014

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    High-sensitivity rapid direct bacteria counting is an essential key method for point-of-care testing. Counting pathogens (cells, viruses, and bacteria) directly in real time with high sensitivity is useful in maintaining human health and preventing pandemics or bioterrorism. However, conventional counting methods with high sensitivity such as the polymerase chain reaction and cultivation-based biochemical testing are time consuming and require controlled places and well-trained staff. On the other hand, conventional rapid approaches such as immuno-chromatography and ATP bioluminescence schemes are insufficient with respect to sensitivity.
    As an alternative, electro-chemical sensing approaches using a microelectrode have been intensely investigated because of its high-sensitivity, simplicity, and high-throughput. In this work, a CMOS sensor platform with a bacteria-sized (1.2 mu m x 2.05 mu m) Au electroless-plated 1024 x 1024 microelectrode array for high-sensitivity rapid direct bacteria counting is demonstrated. For high-sensitivity direct pathogen counting, Au microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the size of microelectrodes on a CMOS sensor chip was successfully reduced to 1.2 mu m x 2.05 mu m, corresponding to 1/20th of the smallest size reported in literature. Two test chips with 1024 x 1024 and 32 x 32 sensor arrays were fabricated in a 0.6-mu m CMOS process and microelectrodes were formed on them using electroless plating. In this demonstration, 2D counting used 32 x 32 sensor arrays with silicone (fig. 1) by CV is introduced.

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  132. Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C Reviewed

    Yi Lu, Akiko Kobayashi, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53 ( 1 ) page: 010305:1-4   2013.12

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    DOI: 10.7567/JJAP.53.010305

  133. Effect of Indirect Nonequilibrium Atmospheric Pressure Plasma on Anti-Proliferative Activity against Chronic Chemo-Resistant Ovarian Cancer Cells In Vitro and In Vivo Reviewed

    Fumi Utsumi, Hiroaki Kajiyama, Kae Nakamura, Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Hiroki Kondo, Hiroyuki Kano, Masaru Hori, and Fumitaka Kikkawa

    PLoS ONE 8 (12) (Dec. 18, 2013) e81576     2013.12

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    DOI: 10.1371/journal.pone.0081576

  134. High H Radical Density Produced by 1-m-length Atmospheric Pressure Microwave Plasma System Reviewed

    Hitoshi Itoh, Yusuke Kubota, Yusaku Kashiwagi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Hirotaka Toyoda, and Masaru Hori

    Jpn. J. Appl. Phys. 52 (11) (Nov 20, 2013) 11NE01     2013.11

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    DOI: 10.7567/JJAP.52.11NE01

  135. Field Emissions from Organic Nanorods Armored with Metal Nanoparticles Reviewed

    Toshiya Suzuki, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys. 52 (12) (Nov 15, 2013) 120203     page: 1-4   2013.11

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    DOI: 10.7567/JJAP.52.120203

  136. Density Control of Carbon Nanowalls Grown by CH4/H2 plasma and Their Electrical Properties Reviewed

    Hyung Jun Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Carbon   Vol. 68   page: 380-388   2013.11

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    DOI: 10.1016/j.carbon.2013.11.014

  137. Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry Reviewed

    Takayoshi Tsutsumi, Takayuki Ohta, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori, and Masafumi Ito

    Appl. Phys. Lett. 103 (18) (2013) 182102     2013.10

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    DOI: 10.1063/1.4827426

  138. Atomic Oxygen Etching from the Top Edges of Carbon Nanowalls Reviewed

    Shimoeda Hironao, Kondo Hiroki, Ishikawa Kenji, HIRAMATSU Mineo, SEKINE Makoto, HORI Masaru

    Applied physics express   Vol. 6 ( 9 ) page: "095201-1"-"095201-4"   2013.9

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  139. A Development of Atmospheric Pressure Plasma Equipment and Its Applications for Treatment of Ag Films Formed from Nano-Particle Ink Reviewed

    H Itoh, Y Kubota, Y Kashiwagi, K Takeda, K Ishikawa, H Kondo, M Sekine, H Toyoda and M Hori

    Journal of Physics: Conference Series   Vol. 441   2013.6

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    DOI: doi:10.1088/1742-6596/441/1/012019

  140. Surface morphology on high-temperature plasma-etched gallium nitride Reviewed

    Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Trans. Mater. Res. Soc. Jpn. 38 (2)     page: 325-328   2013.6

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    DOI: 10.14723/tmrsj.38.325

  141. A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface Reviewed

    Kometani Ryosuke, Ishikawa Kenji, Takeda Keigo, KONDO Hiroki, SEKINE Makoto, HORI Masaru

    Applied physics express   Vol. 6 ( 5 ) page: 056201-1 - 056201-4   2013.5

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  142. Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes Reviewed International coauthorship International journal

    Masanaga Fukasawa, Hiroyasu Matsugai, Takahiro Honda, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Kazunori Nagahata, Fumikatsu Uesawa, Masaru Hori, Tetsuya Tatsumi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 5 )   2013.5

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    The wavelength dependence of SiNx:H/Si interface defect generation caused by vacuum ultraviolet (VUV)/UV radiation from plasma etching processes was investigated. VUV radiation (lambda &lt; 200 nm) had almost no impact on the generation of defects at the SiNx:H/Si interface, since all the radiation in this wavelength range was absorbed in the upper SiNx:H film. However, UV radiation (200 &lt; lambda &lt; 400 nm) was able to reach the underlying SiNx:H/Si interface and damage the interface. Direct UV radiation reaching the SiNx : H/Si interface dissociated the chemical bonds at the interface and generated interface-trapped charges. The estimated total energy of absorbed photons (E-total; 200 &lt; lambda &lt; 400 nm) at the interface layer seems to be proportional to the interface-trapped charge density (D-it) measured by capacitance-voltage measurement. However, the mechanism underlying the relationship between E-total and D-it is not yet clear. Visible radiation (lambda &gt; 400 nm) had no influence on damage generation on the SiNx:H/Si structure, since the visible radiation was transmitted through upper SiNx:H film and underlying interface layer. The results revealed that UV radiation transmitted through the upper dielectrics can cause the electrical characteristics of underlying metal-oxide-semiconductor (MOS) devices to fluctuate. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.05ED01

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  143. Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO₂ on Carbon Nanowalls Reviewed

    Horibe Takeyoshi, Kondo Hiroki, Ishikawa Kenji, KANO Hiroyuki, SEKINE Makoto, HIRAMATSU Mineo, HORI Masaru

    Applied physics express   Vol. 6 ( 4 ) page: 045103-1 - 045103-3   2013.4

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  144. Graphene Nanowalls Invited Reviewed

    Mineo Hiramatsu, Hiroki Kondo and Masaru Hori

    Chapter 9 in Book "New Progress on Graphene Research"     2013.3

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    DOI: 10.5772/3358

  145. Etching-Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma Reviewed

    Y. Miyawaki, E. Shibata, Y. Kondo, K. Takeda, H. Kondo, K. Ishikawa, H. Okamoto, M. Sekine, M. Hori

    Jpn. J. Appl. Phys.   Vol. 52 ( 2 ) page: pp.020204:1-4   2013.2

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    DOI: 10.7567/JJAP.52.020204

  146. Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma Reviewed

    T. Takeuchi, K. Ishikawa, Y. Setsuhara, K. Takeda, H. Kondo, M. Sekine, M. Hori

    J. Phys. D: Appl. Phys.   Vol. 46   page: pp. 102001:1-5   2013.2

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    DOI: 10.1088/0022-3727/46/10/102001

  147. Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy Reviewed

    Chen Shang, Kawai Yohjiro, Kondo Hiroki, Ishikawa Kenji, Takeda Keigo, Kano Hiroyuki, Sekine Makoto, Amano Hiroshi, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 2 ) page: 021001-1 - 021001-5   2013.2

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    DOI: 10.7567/JJAP.52.021001

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  148. Fabrication of Graphene-Based Films Using Microwave-Plasma-Enhanced Chemical Vapor Deposition Reviewed

    M. Hiramatsu, M. Naito, H. Kondo, and M. Hori

    Jpn. J. Appl. Phys. 52 (1) (Jan 21, 2013) 01AK04     2013.1

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    DOI: 10.7567/JJAP.52.01AK04

  149. Nucleation Control of Carbon Nanowalls Using Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition Reviewed

    M. Hiramatsu, Y. Nihashi, H. Kondo, and M. Hori

    Jpn. J. Appl. Phys. 52 (1) (Jan 21, 2013) 01AK05     2013.1

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    DOI: 10.7567/JJAP.52.01AK05

  150. Impact of hydrogen radical-injection plasma on fabrication of microcrystalline silicon thin film for solar cells Reviewed

    Abe Yusuke, Kawashima Sho, Fukushima Atsushi, Lu Ya, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 3 ) page: 033304:1 - 033304:6   2013.1

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    DOI: 10.1063/1.4778608

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  151. Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment Reviewed

    T. Takeuchi, C. Corbella, S. Grosse-Kreul, A. von Keudell, K. Ishikawa, H. Kondo, K. Takeda, M. Sekine, M. Hori

    J. Appl. Phys.   Vol. 113   page: P.014306:1-6   2013.1

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  152. Fabrication of Carbon Nanowalls on Carbon Fiber Paper for Fuel Cell Application Reviewed International coauthorship International journal

    Mineo Hiramatsu, Shinji Mitsuguchi, Takeyoshi Horibe, Hiroki Kondo, Masaru Hori, Hiroyuki Kano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 1 )   2013.1

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    Carbon nanowalls (CNWs) can be described as self-assembled, vertically standing, few-layered graphene sheet nanostructures. In order to demonstrate the usefulness of CNWs in fuel cell application, CNWs were directly grown on carbon fiber paper (CFP) using the inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD) method. Subsequently, highly dispersed platinum (Pt) nanoparticles were formed on the surface of CNWs using metal-organic chemical fluid deposition (MOCFD) employing a supercritical fluid (SCF). Moreover, a single proton exchange membrane (PEM) fuel cell unit using a Pt-supported CNW/CFP electrode was constructed, and its voltage-current characteristics were measured. This configuration ensures that all the supported Pt nanoparticles are in electrical contact with the external electrical circuit. Such a design would improve Pt utilization and potentially decrease Pt usage. Pt-supported CNWs grown on CFP will be well suited to the application in electrodes of fuel cells. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.01AK03

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  153. Surface loss probability of H radicals on silicon thin films in SiH4/H-2 plasma International coauthorship International journal

    Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 1 )   2013.1

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    The surface loss probability of H radicals was investigated in SiH4/H-2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface loss probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface loss probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface loss probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface loss probability of H radicals in SiH4/H-2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773104]

    DOI: 10.1063/1.4773104

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  154. Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film Reviewed International coauthorship International journal

    W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, S. Zaima

    15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15)   Vol. 417 ( 1 ) page: 012017 (6 pages)   2013

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    We have investigated the effects of Al incorporation into a Pr-oxide/Si gate stack formed by atomic layer deposition. The PrAlOx (PAO) layers show an amorphous structure by the incorporation of Al into the Pr-oxide. The PAO sample with 10%-Al shows good C-V characteristics without a hump, and the interface state density (D-it) is as low as 5 x 10(10) cm(-2) eV(-1). The amount of Si in the Pr-oxide film decreases by the Al incorporation. We deduce that Al incorporation into a Pr-oxide layer inhibits reaction at the interface of the PAO/Si substrate. We found that Al incorporation into the Pr-oxide is effective against the inhibition of moisture incorporation into the oxide film. The Pr(OH)(3) component, estimated by x-ray photoelectron spectroscopy, increases near the surface of the Pr-oxide and PAO films with 10%-Al after 300 days, while the SiOx component does not change. The Pr(OH) 3 component decreases with increasing Al incorporation. The D-it of the PAO/Si sample with 10%-Al increases after 300 days. After post metallization annealing of the sample in N-2, D-it decreases with increasing annealing temperature.

    DOI: 10.1088/1742-6596/417/1/012017

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  155. Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching Reviewed International coauthorship International journal

    Shang Chen, Kenji Ishikawa, Yi Lu, Ryosuke Kometani, Hiroki Kondo, Yutaka Tokuda, Takashi Egawa, Hiroshi Amano, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 11 ) page: 111002-1:5   2012.11

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    In the recovery of photoluminescence intensities for band-edge emissions at around 3.47 eV in the case of gallium nitride (GaN), we have studied the individual roles of hydrogen atoms (H) and hydrogen ions (H-n(+)). Surface defects such as nitrogen vacancies created by plasma etching were passivated by H termination. By utilizing hydrogen plasmas, we clarified the recovery efficiency by optical and stoichiometrical improvements with respect to the balance between the fluxes of H and H-n(+). By deflecting H-n(+) by applying an electric field, the efficiency was improved using an identical H dosage, since the simultaneous irradiation of the energetic H-n(+) promoted the desorption of the formed passivated Ga-H bonds. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.111002

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  156. Critical flux ratio of hydrogen radical to film precursor in microcrystalline silicon deposition for solar cells Reviewed

    Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    Appl. Phys. Lett.   Vol. Vol.101   page: pp.172109-1:4   2012.10

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    DOI: 10.1063/1.4764065

  157. プラズマナノテクノロジーによる10mmサイズ、超高アスペクト比有機ナノピラーの室温近傍形成とフレキシブルディスプレイへの応用

    堀 勝、鈴木 俊哉、竹田 圭吾、近藤 博基、石川 健治、関根 誠

    名古屋大学ベンチャー・ビジネス・ラボラトリーニュース/2012, Summer, No.33   Vol. 17 ( 1 ) page: 研究紹介(1)   2012.8

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  158. Chemical Bonding States of Nano-dopants in Li Secondary Battery Cathode Analyzed by EELS and First Principles Calculation Reviewed

    TATSUMI Kazuyoshi, MUTO Shunsuke, KONDO Hiroki, SASAKI Tsuyoshi, UKYO Yoshio

    Ceramics Japan : Bulletin of the Ceramic Society of Japan   Vol. 47 ( 7 ) page: 528 - 533   2012.7

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  159. Real-time in situ electron spin resonance measurements on fungal spores of Penicillium digitatum during exposure of oxygen plasmas Reviewed International coauthorship International journal

    Kenji Ishikawa, Hiroko Mizuno, Hiromasa Tanaka, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    APPLIED PHYSICS LETTERS   Vol. 101 ( 1 )   2012.7

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    We report the kinetic analysis of free radicals on fungal spores of Penicillium digitatum interacted with atomic oxygen generated plasma electric discharge using real time in situ electron spin resonance (ESR) measurements. We have obtained information that the ESR signal from the spores was observed and preliminarily assignable to semiquinone radical with a g-value of around 2.004 and a line width of approximately 5G. The decay of the signal is possibly linked to the inactivation of the fungal spore. The real-time in situ ESR has proven to be a useful method to elucidate plasma-induced surface reactions on biological specimens. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733387]

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  160. Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature Reviewed

    Chen Shang, Lu Yi, Kometani Ryosuke, Ishikawa Kenji, Kondo Hiroki, Tokuda Yutaka, Sekine Makoto, Hori Masaru

    AIP ADVANCES   Vol. 2 ( 2 ) page: pp.022149-1:6   2012.6

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    DOI: 10.1063/1.4729448

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  161. Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma Reviewed International coauthorship International journal

    Tatsuya Hagino, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 5 ( 3 ) page: pp. 035101-1:3   2012.3

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    Ultrahigh-speed synthesis of high-crystallinity nanographene was realized using an alcohol in-liquid plasma, which was generated from a nonequilibrium microhollow atmospheric-pressure plasma with an ultrahigh electron density. The synthesis rates of carbon materials were 0.61 and 1.72 mg/min using ethanol and butanol, respectively. Multilayer nanographene structures obtained using ethanol had an interlayer spacing of 0.33 nm, corresponding to that of (002) planes in graphite. The G-, D-, D'-, and 2D- band peaks in the Raman spectrum also confirmed the formation of nanographene. The mechanism of gradual growth of six-membered ring structures was clarified by gas chromatography of the filtrate. (c) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.035101

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  162. Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation Reviewed International coauthorship International journal

    Masanaga Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Hiroyasu Matsugai, Takayoshi Honda, Masaki Minami, Fumikatsu Uesawa, Masaru Hori, Tetsuya Tatsumi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 2 )   2012.2

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    Photon-enhanced etching of SiNx:H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the fluorocarbon plasma was investigated by a technique with a novel sample setup of the pallet for plasma evaluation. The simultaneous injection of UV radiation and radicals causes a dramatic etch rate enhancement of SiNx:H films. Only UV radiation causes the film shrinkage of SiNx:H films owing to hydrogen desorption from the film. Capacitance-voltage characteristics of SiNx:H/Si substrates were studied before and after UV radiation. The interface trap density increased monotonically upon irradiating the UV photons with a wavelength of 248 nm. The estimated effective interface trap generation probability is 4.74 x 10(-7) eV(-1 center dot)photon(-1). Therefore, the monitoring of the VUV/UV spectra during plasma processing and the understanding of its impact on the surface reaction, film damage and electrical performance of underlying devices are indispensable to fabricate advanced devices. (c) 2012 The Japan Society of Applied Physics

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  163. Direct current superposed dual-frequency capacitively coupled plasmas in selective etching of SiOCH over SiC Reviewed International coauthorship International journal

    Tsuyoshi Yamaguchi, Tatsuya Komuro, Chishio Koshimizu, Seigo Takashima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 45 ( 2 )   2012.1

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    Superpositioning of negative dc bias in dual-frequency capacitively coupled plasmas (dc-superposed (DS)-CCP) was realized for the selective etching of carbon-doped silicon oxide (SiOCH) films over carbon-doped amorphous silicon (SiC) films, while the dc bias exceeded about -800 V. When a dc bias of -1200 V was superposed on 60 MHz VHF power on the top electrode opposed to a wafer on the bottom electrode biased with 13.56 MHz power, a selectivity of above 50 for SiOCH over SiC was obtained. From characterization of the plasma density and various chemical species in the gaseous phase, such as CF(2), CF and atomic N, the density of CF(2) significantly decreased with the application of dc bias ranging from -800 to -1200V. This indicated that CF(2) radicals were consumed at the surface of the counter electrode which was made of silicon. The bulk densities of the species including CF(2) were decreased, especially due to excess surface loss caused by the bombardment of highly energetic ions accelerated by the superposed dc bias, as well as the rf sheath for the superposition of the negative dc bias. The DS-CCP technology is thus concluded to be indispensable for yielding highly selective etching of SiOCH over SiC.

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  164. Highly selective etching of SiO2 over Si3N4 and Si in capacitivlly coupled plasma employing C5HF7 gas Reviewed

    Y.Miyawaki, Y. Kondo, M. Sekine, K. Ishikawa, T. Hayashi, K. Takeda, H. Kondo, M. Hori

    Jpn. J. Appl. Phys   Vol. 52   page: pp. 016201:1-9   2012.1

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    DOI: 10.7567/JJAP.52.016201

  165. Novel diffraction gratings fabricated by means of plasma nano-technologies Reviewed International coauthorship International journal

    N. Ebizuka, M. Sekine, K. Ishikawa, H. Kondo, M. Hori, M. Sasaki, A. Bianco, F. Maria Zerbi, Y. Hirahara, W. Aoki

    MODERN TECHNOLOGIES IN SPACE-AND GROUND-BASED TELESCOPES AND INSTRUMENTATION II   Vol. 8450   2012

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    A volume phase holographic grating (VPHG) achieves very high diffraction efficiency up to 100% for S or P polarized light at the first diffraction order. However, diffraction efficiency of the VPHG for non-polarized light becomes low according as Bragg angle becomes large, and bandwidth of diffraction efficiency becomes narrow according as refractive index modulation of grating lattice becomes small. A volume binary grating with rectangular lattice, consists of high and low refractive index media with large or small duty ratio, is able to achieve very high efficiency nearly 100% and a wide band width for both S and P polarization light. We have successfully fabricated germanium immersion gratings of step groove shape with resolving power of 45,000 at 10 micron by using a nano-precision 3D grinding machine and ELID (ELectrolytic In-process Dressing) method. However, the method requires a large amount of machine times and efforts. We had proposed a novel immersion grating with slot shape lattice of total reflection mirrors, which achieves high performance and lower fabrication cost. We describe the photolithography and the latest plasma nano-technologies for fabrications of the novel diffraction gratings in our presentation. We also introduce birefringence volume gratings in this article.

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  166. Electron Spin Resonance (ESR) observation of radicals on biological organism interacted with plasmas Reviewed

    Kenji Ishikawa, Hiroko Moriyama, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    Materials Research Society Symposium Proceedings   Vol. 1469   page: 39 - 42   2012

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    We report the kinetic analysis of radicals on fungal spores of Penicillium digitatum interacted with charged-neutral oxygen species (Oz.ast
    ) generated plasma discharge using real time in situ electron spin resonance (ESR) measurements. The ESR signal from the spores was observed at a g-value of around 2.004 with a line width of approximately 5G. We have successfully obtained information regarding the reaction mechanism with free radicals and realtime in situ ESR has proven to be a useful method to elucidate plasma-induced surface reactions on biological specimens. ©2012 Materials Research Society.

    DOI: 10.1557/opl.2012.928

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  167. Selective Killing of Ovarian Cancer Cells through Induction of Apoptosis by a Nonequilibrium Atmospheric Pressure Plasma Reviewed

    Hiromasa Tanaka, Sachiko Iseki, Kae Nakamura, Moemi Hayashi, Hiroki Kondo, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, Masaru Hori

    Materials Research Society Symposium Proceedings   Vol. 1469   page: 33 - 38   2012

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    Two independent ovarian cancer cell lines and fibroblast controls were treated with nonequilibrium atmospheric pressure plasma (NEAPP). Most ovarian cancer cells were detached from the culture dish by continuous plasma treatment to a single spot on the dish. Next, the plasma source was applied over the whole dish using a robot arm. In vitro cell proliferation assays showed that plasma treatments significantly decreased proliferation rates of ovarian cancer cells compared to fibroblast cells. FACS and Western blot analysis showed that plasma treatment of ovarian cancer cells induced apoptosis. NEAPP could be a promising tool for therapy for ovarian cancers. © 2012 Materials Research Society.

    DOI: 10.1557/opl.2012.927

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  168. Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature Reviewed

    Hiroshi Yamamoto, Hiroki Kuroda, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Japanese Journal of Applied Physics (JJAP)     2011.12

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    DOI: 10.1143/JJAP.51.016202

  169. Chemical bond modification in porous SiOCH films by H-2 and H-2/N-2 plasmas investigated by in situ infrared reflection absorption spectroscopy Reviewed International coauthorship International journal

    Hiroshi Yamamoto, Kohei Asano, Kenji Ishikawa, Makoto Sekine, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa, Keigo Takeda, Hiroki Kondo, Masaru Hori

    JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 12 )   2011.12

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    The modification of porous low-dielectric (low-k) SiOCH films by ashing plasma irradiation and subsequent exposure to air was investigated by in situ characterizations. Porous blanket SiOCH film surfaces were treated by a H-2 or H-2/N-2 plasma in a 100-MHz capacitively coupled plasma reactor. The individual or combined effects of light, radicals, and ions generated by the plasmas on the chemical bonds in the porous SiOCH films were characterized using an in situ evaluation and by in situ Fourier-transform infrared reflection absorption spectroscopy (IR-RAS). In situ IR-RAS analysis revealed that the number of Si-OH, Si-H, and Si-NH2 bonds increased while the number of Si-CH3 bonds decreased during exposure to a H-2 or H-2/N-2 plasma. Subsequent air exposure increased the number of Si-OH bonds by modifying Si-O-Si structures. The experimental results indicate that light emitted from a H-2 or H-2/N-2 plasma can break Si-CH3 and Si-O-Si bonds and thereby generate dangling bonds. Radicals (e. g., NxHy and H radicals) can break Si-CH3 and Si-O-Si bonds and Si-NH2, Si-H, and Si-OH bonds could be formed. Si-NH2, Si-H, and dangling bonds react with moisture in the air cause the formation of Si-OH bonds. The dehydroxylation reaction on Si-OH was found to be the origin of Si-O-Si network structures. The mechanism of the degradation of porous low-k SiOCH films induced by a H-2 or H-2/N-2 plasma is discussed based on the in situ characterization results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671547]

    DOI: 10.1063/1.3671547

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  170. High-Performance Decomposition and Fixation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism Reviewed

    Kei Hattori, Masaaki Osato, Takeshi Maeda, Katsuya Okumura, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 11 )   2011.11

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    We report on the high-performance decomposition and fixation of perfluoro compounds (PFCs) exhausted from dry etching processes and their reaction mechanism with the fixation material prepared from Ca(OH)(2) and Al(OH)(3) mixture. Using gas chromatography-mass spectrometry (GCMS), powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and other analysis methods, it was found that PFCs were successfully decomposed and fixated by the reaction only with calcium compounds, resulting in calcium fluoride (CaF2). Aluminum compounds existing very close to calcium compounds work as a catalyst so that the reaction progresses at much lower temperatures, in the range of 650 to 750 degrees C, compared with the direct decomposition by combustion. The reaction mechanism is discussed on the basis of the proposed microscopic reaction model. These results are useful for the development of more efficient abatement systems for the greenhouse gases in the exhaust of dry etching processes. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.117301

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  171. Synchrotron x-ray analyses of crystalline and electronic structures of carbon nanowalls Reviewed

    Hiroki Kondo, Wakana Takeuchi, Masaru Hori, Shigeru Kimura, Yukako Kato, Takayuki Muro, Toyohiko Kinoshita, Osami Sakata, Hiroo Tajiri, Mineo Hiramatsu

    APPLIED PHYSICS LETTERS   Vol. 99 ( 21 )   2011.11

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    The electronic and crystal structures of carbon nanowalls (CNWs) were analyzed using synchrotron x-rays. Although they have branchless graphene sheets with high crystallinities comparable to those of highly oriented pyrolytic graphite, they also have small amount of fluorine atoms and slightly large interlayer spacing of basal plane. Soft x-ray emission spectra indicate that CNWs have similar but not identical electronic structures to HOPG. Such the chemical and crystallographic structures might be one of factors to induce characteristic electrical features of the CNWs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3659470]

    DOI: 10.1063/1.3659470

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  172. Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure Using Radical Nitridation Technique Reviewed International coauthorship International journal

    Kimihiko Kato, Shinya Kyogoku, Mitsuo Sakashita, Wakana Takeuchi, Hiroki Kondo, Shotaro Takeuchi, Osamu Nakatsuka, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 10 )   2011.10

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    We have investigated the control of the interfacial properties of Al2O3/Ge gate stack structures by the radical nitridation technique. In the Al2O3/Ge structures formed by the atomic layer deposition method, the interface state density increases with the deposition temperature due to the decrease in the thickness of the Ge oxide interlayer. On the other hand, the hysteresis width of the capacitance-voltage (C-V) characteristics decreases with increasing deposition temperature, which indicates a decrease in the oxide trap density near the interface. We also investigated the control of the interfacial structure by the radical nitridation of Al2O3/Ge to form an interfacial structure after the deposition of a high-k dielectric layer. The results of X-ray photoelectron spectroscopy reveal that an Al2O3/Ge3N4/GeO2/Ge stack structure is formed after the radical nitridation owing to the minimal oxygen diffusion into the Al2O3/Ge interface. Furthermore, the interfacial mixing is suppressed after radical nitridation at less than 300 degrees C. As a result, we can decrease the interface state density of the Al2O3/Ge sample after the radical nitridation by more than one order of magnitude compared with that without radical nitridation. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.10PE02

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  173. Nucleation and Vertical Growth of Nano-Graphene Sheets Reviewed

    Hiroki Kondo, Masaru Hori and Mineo Hiramatsu

    Graphene - Synthesis, Characterization, Properties and Applications     2011.9

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    DOI: 10.5772/23703

  174. Reactive Ion Etching of Carbon Nanowalls Reviewed

    Shingo Kondo, Hiroki Kondo, Yudai Miyawaki, Hajime Sasaki, Hiroyuki Kano, Mineo Hiramatsu, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 7 )   2011.7

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    Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon plasma-enhanced chemical vapor deposition system together with H radical injection. To apply CNWs in electronic devices and/or membrane filters, we have demonstrated the reactive ion etching (RIE) of CNWs. RIE employing H-2/N-2 gases showed that the CNW films were anisotropically etched at a relatively high rate of more than 250 nm/min. However, the 10-nm-thick interface layer between a CNW film and the Si substrate remained and the interface layer was not completely etched. In contrast, RIE employing Ar/H-2 gases enabled us to completely remove the interface layer. Ar/H-2 RIE was also carried out from the bottom surface of CNW films after exfoliating them from the Si substrate. As a result, a free-standing CNW film of 550 nm thickness without an interface layer as a membrane filter was successfully formed. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.075101

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  175. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

    Yohjiro Kawai, Shang Chen1, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Hiroki Kondo, Mineo Hiramatsu, Hiroyuki Kano, Koji Yamakawa, Shoji Den, Masaru Hori

    Physica status solidi (c)   Vol. 8 ( 7-8 ) page: 2089-2091   2011.6

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    DOI: 10.1002/pssc.201000969

  176. 液中プラズマを用いたナノグラフェンの高速合成技術 (特集 「グラフェン」の実務的な視点での開発トレンド) Invited

    近藤博基、加納 浩之、堀 勝

    マテリアルステージ 11(2)     page: 57-59   2011.5

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  177. プラズマCVD法によるカーボンナノウォールの制御合成 Invited

    近藤博基、平松美根男、堀 勝

    マテリアルステージ 11(2)     page: 19-21   2011.5

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  178. Formation and mechanism of ultrahigh density platinum nanoparticles on vertically grown graphene sheets by metal-organic chemical supercritical fluid deposition Reviewed

    Kota Mase, Hiroki Kondo, Shingo Kondo, Masaru Hori, Mineo Hiramatsu, Hiroyuki Kano

    APPLIED PHYSICS LETTERS   Vol. 98 ( 19 )   2011.5

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    An ultrahigh density over 10(13) cm(-2) of 2 nm diameter Pt nanoparticles was obtained by metal-organic chemical supercritical fluid deposition over the entire surface of vertically standing stacked graphene sheets (carbon nanowalls) on a substrate. The correlation between the surface defect density of graphene sheets and the density of Pt nanoparticles were investigated to clarify the support mechanism. The density of Pt nanoparticles increased with increase in the surface defect density. In addition, the semispherical cross-sectional shape of the nanoparticles indicated nucleation at the surface defects on the graphene sheets (98/100). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583672]

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  179. Spatial Distributions of Electron, CF, and CF2 Radical Densities and Gas Temperature in DC-Superposed Dual-Frequency Capacitively Coupled Plasma Etch Reactor Employing Cyclic-C4F8/N-2/Ar Gas Reviewed International coauthorship International journal

    Tsuyoshi Yamaguchi, Tetsuya Kimura, Chishio Koshimizu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 5 )   2011.5

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    On a plasma etch reactor for a wafer of 300 mm in diameter, the spatial distributions of the absolute densities of CF and CF2 radicals, electron density (n(e)), and the gas temperature (T-g) of N-2 were measured employing the dual frequency of negative dc voltage superposed to a very high frequency (VHF) of 60 MHz capacitively coupled plasma (DS-2f-CCP) with the cyclic-(c-)C4F8/Ar/N-2 gas mixture. The dc bias was superposed on the upper electrode with a frequency of 60 MHz. The distributions of electron and radical densities were uniform within a diameter of about 260 mm, and took a monotonic decay in regions outside a diameter of 260 mm on the reactor for 300mm wafers in the reactor. It was found that only CF2 density at the radial position between 150 and 180 mm, corresponding to the position of the Si focus ring, dropped, while CF density took a uniform distribution over a diameter of 260 mm. Additionally, at this position, the rotational temperature of N-2 gas increased to be 100 K larger than that at the center position. CF2 radical density was markedly affected by the modified surface loss probability of the material owing to coupling with surface temperature. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.056101

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  180. Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed

    Masaki Adachi, Yuzo Kato, Kimihiko Kato, Mitsuo Sakashita, Hiroki Kondo, Wakana Takeuchi, Osamu Nakatsuka and Shigeaki Zaima

    Japanese Journal of Applied Physics   Vol. 50 ( 4S )   2011.4

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    DOI: 10.1143/JJAP.50.04DA08

  181. Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure Reviewed

    Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Hiroki Kondo, Osamu Nakatsuka and Shigeaki Zaima

    Japanese Journal of Applied Physics   Vol. 50 ( 4S )   2011.4

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    DOI: 10.1143/JJAP.50.04DA17

  182. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed International coauthorship International journal

    Z. H. Wu, Y. Kawai, Y. -Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

    APPLIED PHYSICS LETTERS   Vol. 98 ( 14 )   2011.4

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    In this letter, we have investigated the structural properties of thick InGaN layers grown on GaN by plasma-assisted molecular beam epitaxy, using two growth rates of 1.0 and 3.6 angstrom/s. A highly regular superlattice (SL) structure is found to be spontaneously formed in the film grown at 3.6 angstrom/s but not in the film grown at 1.0 angstrom/s. The faster grown film also exhibits superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3574607]

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  183. Electron field emission enhancement of carbon nanowalls by plasma surface nitridation Reviewed

    Takeuchi Wakana, Kondo Hiroki, Obayashi Tomomi, Hiramatsu Mineo, Hori Masaru

    APPLIED PHYSICS LETTERS   Vol. 98 ( 12 )   2011.3

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    DOI: 10.1063/1.3532114

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  184. Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet Reviewed

    Jia Fengdong, Sumi Naoya, Ishikawa Kenji, KANO Hiroyuki, INUI Hirotoshi, KULARATNE Jagath, TAKEDA Keigo, KONDO Hiroki, SEKINE Makoto, KONO Akihiro, HORI Masaru

    Applied physics express   Vol. 4 ( 2 ) page: 026101-1 - 026101-3   2011.2

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  185. Growth of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)_3, and Their Electrical Properties Reviewed

    KONDO Hiroki, SAKASHITA Mitsuo, ZAIMA Shigeaki

    Journal of the Vacuum Society of Japan   Vol. 54 ( 2 ) page: 110 - 113   2011.2

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    &nbsp;&nbsp;Growth properties and electrical properties of Pr oxide films by an atomic layer deposition (ALD) technique using Pr(EtCp)<sub>3</sub> are discussed in this paper. Slef-limiting growth of Pr oxide films at a rate of 0.07 nm/cycle and a thickness variation of less than 2% on 3-in. Si wafers were obtained. Polycrystalline cubic Pr<sub>2</sub>O<sub>3</sub> films were grown on Si(001) substrates, while epitaxial growth of the cubic Pr<sub>2</sub>O<sub>3</sub> film was found on a Si(111) substrate. Relatively fine capacitance-voltage curves were obtained for the Al/ALD-Pr oxide/Si(001) capacitors. The interface state density between the 130&deg;C-grown ALD-Pr oxide film and the Si(001) substrate is about 1&times;10<sup>11</sup> cm<sup>&minus;2</sup> eV<sup>&minus;1</sup>. The dielectric constant of the ALD-Pr oxide film grown at 250&deg;C was determined to be about 18, assuming that the dielectric constant of the interlayer is similar to that of SiO<sub>2</sub>.<br>

    DOI: 10.3131/jvsj2.54.110

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    CiNii Books

  186. Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet Reviewed International coauthorship International journal

    Fengdong Jia, Naoya Sumi, Kenji Ishikawa, Hiroyuki Kano, Hirotoshi Inui, Jagath Kularatne, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Akihiro Kono, Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 2 )   2011.2

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    A non-equilibrium atmospheric pressure plasma jet excited by 60-Hz ac power was diagnosed by laser Thomson and laser Raman scattering. We obtained the spatial distributions of the electron density, electron temperature, and gas temperature. The results show that the plasma can generate an electron density of up to 10(21) m(-3), an electron temperature of approximately 1 eV, and a gas temperature as low as approximately 700 K, indicating that the plasma is in the non-equilibrium state. The laser scattering diagnostic method and the obtained data are useful in the application of the non-equilibrium atmospheric pressure plasma jet. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.026101

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  187. Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N-2-H-2 Mixture Plasmas Reviewed

    Shang Chen, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Makoto Sekine, Hiroyuki Kano, Shoji Den, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 ) page: 01AE03   2011.1

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    For an innovation of molecular-beam-epitaxial (MBE) growth of gallium nitride (GaN), the measurements of absolute densities of N, H, and NH3 at the remote region of the radical source excited by plasmas have become absolutely imperative. By vacuum ultraviolet absorption spectroscopy (VUVAS) at a relatively low pressure of about 1 Pa, we obtained a N atom density of 9 x 10(12) cm(-3) for a pure nitrogen gas used, a H atom density of 7 x 10(12) cm(-3) for a gas composition of 80% hydrogen mixed with nitrogen gas were measured. The maximum density 2 x 10(13) cm(-3) of NH3 was measured by quadruple mass spectrometry (QMS) at H-2/(N-2 + H-2) = 60%. Moreover, we found that N atom density was considerably affected by processing history, where the characteristic instability was observed during the pure nitrogen plasma discharge sequentially after the hydrogen-containing plasma discharge. These results indicate imply the importance of establishing radical-based processes to control precisely the absolute densities of N, H, and NH3 at the remote region of the radical source. (C) 2011 The Japan Society of Applied Physics

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  188. Al2O3界 面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御

    加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会     page: 55-58   2011.1

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  189. 電流検出型原子間力顕微鏡を 用いた欠陥に起因するPr酸化膜のリーク電流機構の解明

    足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会     page: 123-126   2011.1

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  190. Pr酸化膜/Si構造へのAl導入による界面反応抑制効果

    古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会     page: 51-54   2011.1

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  191. Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響

    加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会     page: 99-102   2011.1

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  192. Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering Reviewed

    Hiroki Kondo, Masaru Hori, Wakana Takeuchi, Mineo Hiramatsu

    Key Engineering Materials   Vol. 470   page: 85-91   2011

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  193. Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis Reviewed International coauthorship

    Arkadiusz Malinowski, Makoto Sekine, Masaru Hori, Kenji Ishikawa, Hiroki Kondo, Toshiya Suzuki, Takuya Takeuchi, Hiroshi Yamamoto, Andrzej Jakubowski, Lidia Lukasiak, Daniel Tomaszewski

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD     page: 235 - 238   2011

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    Investigation of radicals kinetic behavior and estimation of radical sticking coefficient become indispensable for establishing plasma processing control by its internal parameters. This approach is required for plasma processing of single-nanometer gate length field effect transistors and 3-diemnsional gates in particular. In our works we have developed new technique for radicals kinetic behavior investigation and its sticking coefficient estimation. Our approach is based on application of parallel plate structure in conjunction with numerical analysis. This approach allows for radicals behavior investigation apart from ions and ultraviolet photons. Moreover this approach allows for analysis role of radical direct and indirect fluxes. By comparison of measured profile thickness and simulated stuck radicals profile we were able to estimate hydrogen radical sticking probability to ArF photoresist. © 2011 IEEE.

    DOI: 10.1109/SISPAD.2011.6035090

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  194. The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition Reviewed

    FURUTA Kazuya, TAKEUCHI Wakana, SAKASHITA Mitsuo, KONDO Hiroki, NAKATSUKA Osamu, ZAIMA Shigeaki

    IEICE technical report   Vol. 110 ( 90 ) page: 39-42   2010.6

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    We formed the PrAlO(PAO) films on Si substrate by atomic layer deposition (ALD) using Pr(EtCp)_3, TMA, and H_2O, and evaluated its electrical properties. From X-ray photoelectron spectroscopy (XPS) results, Si component in films which is caused by interfacial reaction segregated near surface of Pr-oxide film. The Si component in the films decreases with Al incorporation. This result indicates that the interfacial reaction is suppressed by Al incorporation. The interface state density (D_<it>) in the shallow level measured by deep level transient spectroscopy (DLTS) measurement of Pr-oxide films decrease with Al incorporation. Thus, it is suggest that the D_<it> of shallow level cause by interfacial layer. It found that the cause is that the interfacial reaction is controlled by the Al incorporation.

  195. Optical Properties of Evolutionary Grown Layers of Carbon Nanowalls Analyzed by Spectroscopic Ellipsometry Reviewed

    Shinji Kawai, Shingo Kondo, Wakana Takeuchi, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 6 ) page: 060220   2010.6

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    Carbon nanowalls (CNWs), vertically standing graphene sheets, grown by the radical injection plasma-enhanced chemical vapor deposition system were analyzed by spectroscopic ellipsometry. The refractive indexes (n), extinction coefficients (k), and optical band gaps (E(g)) of evolutionary growth layers were evaluated using the Tauc-Lorentz model with the effective medium approximation. It was observed that an amorphous carbon interfacial layer with n of 1.9-2.0 was formed prior to the growth of CNWs with n of 1.2-1.5. Moreover, the imaginary parts of complex dielectric functions analyzed using the Tauc-Lorentz model indicate the possibility that the CNWs have semiconducting features. (C) 2010 The Japan Society of Applied Physics

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  196. Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor Reviewed International coauthorship International journal

    Hiroki Kondo, Shinnya Sakurai, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

    APPLIED PHYSICS LETTERS   Vol. 96 ( 1 ) page: 012105   2010.1

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    Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)(3). Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O-2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 degrees C has a dielectric constant of 26 +/- 3. Furthermore, conduction band offset of 1.0 +/- 0.1 eV and trap levels of 0.40 +/- 0.02 and 0.22 +/- 0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.

    DOI: 10.1063/1.3275706

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  197. Formation processes of Ge3N4 films by radical nitridation and their electrical properties Reviewed International coauthorship International journal

    Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima

    THIN SOLID FILMS   Vol. 518 ( 6 ) page: S226 - S230   2010.1

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    Formation processes of Ge3N4 by radical nitridation and electrical properties of Pr-oxide/Ge3N4/Ge structure were investigated. Stoichiometric Ge3N4 is Successfully formed by the radical nitridation at temperatures from 50 to 600 degrees C. Change in the nitridation temperature dependence of the saturated thickness of the Ge3N4 suggests different dominant diffusion species. Leakage current density through the Ge3N4 is minimized at a nitridation temperature of 300 degrees C. The XPS analyses of the Pr-oxide/Ge3N4/Ge suggest decomposition of Ge3N4 during atomic layer deposition of the Pr-oxide and formation of Pr-oxynitride at the Pr-oxide/Ge interface. An interface state density in the Al/Pr-oxide/Ge3N4/Ge capacitor is drastically reduced by forming gas annealing. (C) 2009 Published by Elsevier B.V.

    DOI: 10.1016/j.tsf.2009.10.094

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  198. 1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察

    加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第15回研究会),     page: 105-108   2010

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  199. ミクタミクト高窒素組成Hf-Si-Nの結晶構造および電気的特性

    宮本和明, 近藤博基, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第15回研究会)     page: 173-176   2010

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  200. Pr(EtCp)3を用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性

    古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第15回研究会)     page: 125-128   2010

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  201. ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性

    加藤公彦, 近藤博基, 坂下満男, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第15回研究会)     page: 121-124   2010

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  202. Measurement of Hydrogen Radical Density and Its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H-2 and Ar Mixture Gases Reviewed

    Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Hiroyuki Kano, Naofumi Yoshida, Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 3 ( 12 ) page: 126101:1 - 126101:3   2010

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    A 60 Hz alternating current excited atmospheric-pressure plasma with an ultrahigh electron density of over 10(16) cm(-3) employing H-2/Ar [p(H-2)/p(H-2 + Ar) 1-3%] gases was used to reduce copper oxides on copper. The remote plasma reduced CuO and Cu2O at room temperature. The ground-state hydrogen (H) radical density in the atmospheric-pressure plasma was measured by vacuum ultraviolet absorption spectroscopy using a micro hollow cathode lamp. The ratio of reduction of amount of CuO flux to the H radical flux was determined from the measured H radical density and gas temperature. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.3.126101

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  203. Critical Factors for Nucleation and Vertical Growth of Two Dimensional Nano-Graphene Sheets Employing a Novel Ar+ Beam with Hydrogen and Fluorocarbon Radical Injection Reviewed International coauthorship International journal

    Shingo Kondo, Hiroki Kondo, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 3 ( 4 ) page: 045102   2010

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    Two-dimensional nano-graphene sheets, standing vertically on carbon nanowalls (CNWs) substrates, were synthesized by multi-beam chemical vapor deposition employing three types of irradiation, Ar+ beam with tunable fluxes and energies, hydrogen ( H) and fluorocarbon radicals, which could be independently controlled. The CNWs growth processes were investigated by changing the Ar+ irradiation conditions. Irradiation of Ar+ ions with appropriate fluxes and energies on fluorocarbon layers evolved nanoislands for growth of the CNWs. By tuning the fluxes and energies of the incident Ar+ on amorphous carbon nanoislands, critical factors for controlling nucleation and growth of CNWs were determined. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.3.045102

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  204. Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)(3) Precursor Reviewed International coauthorship International journal

    Hiroki Kondo, Hirotaka Matsui, Kazuya Furuta, Mitsuo Sakashita, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 ) page: 04DA14   2010

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    The formation of Pr oxide films by an atomic layer deposition (ALD) technique using Pr(EtCp)(3) and H2O was investigated in this study. The ALD-mode growth of Pr oxide films at a rate of 0.07 nm/cycle and a thickness variation of less than 2% on 3-in. Si wafers was achieved. Transmission electron microscopy (TEM) images and transmission electron diffraction (TED) patterns revealed that polycrystalline cubic Pr2O3 films were grown on Si(001) substrates. On the other hand, epitaxial growth of the cubic Pr2O3 film was clearly observed on a Si(111) substrate. According to X-ray photoelectron spectroscopy (XPS) analyses, the C content of the ALD-Pr oxide film grown at 130 degrees C is 1.6%. Relatively fine capacitance-voltage curves were observed for the Al/ALD-Pr oxide/Si(001) capacitors. The interface state density between the 130 degrees C-grown ALD-Pr oxide film and the Si(001) substrate is about 1 x 10(11) cm(-2) eV(-1). The dielectric constant of the ALD-Pr oxide film grown at 250 degrees C was determined to be about 18, assuming that the dielectric constant of the interlayers is similar to that of SiO2. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.49.04DA14

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  205. Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf-Si-N Films Reviewed International coauthorship International journal

    Kazuaki Miyamoto, Hiroki Kondo, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 ) page: 04DA11   2010

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    The crystalline structures and electrical properties of high-nitrogen (N)-content Hf-Si-N films were investigated. When the N-2 concentration of a sputtering ambient increases from 9.0 to 13.0%, Hf-Si-N resistivity increases by a factor of more than 105 despite the almost constant N content of the film. According to X-ray diffraction profiles and X-ray photoelectron spectra, such high-N-content Hf-Si-N films consist of Hf3N4 and Si3N4, and have energy band gaps. These results indicate that Hf3N4 and high-N-content Hf-Si-N including Hf3N4 have semiconducting features. In Pt/Hf-Si-N/Pt structures with high-N-content Hf-Si-N, nonlinear current-voltage characteristics and hysteresis behaviors are also observed, which markedly change depending on N-2 concentration and postdeposition annealing temperature. Although the elemental composition and crystalline structure hardly change, the phase separation and segregation of nanocrystallites clearly develop. Therefore, these unique electrical characteristics are attributed to current conduction at grain boundaries or Pt/Hf-Si-N interfaces. (C) 2010 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.49.04DA11

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  206. Control of crystalline and electronic structures of carbon nanowalls for their device applications Reviewed

    Hiroki Kondo, Masaru Hori, Mineo Hiramatsu

    TENCON 2010: 2010 IEEE REGION 10 CONFERENCE     page: 972 - 975   2010

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    Controlling factors of crystalline and electronic structures of carbon nanowalls were investigated in this study. Precise measurements and controls of radicals and ions in the plasma make the controlled syntheses of CNWs possible. For example, density ratios of hydrogen (H) and carbon atoms are essential to determine the density and height of CNWs. Ar+ ion irradiation is also important for vertical-growth of graphene sheets. Vertical-growth of graphene sheets could occur only under Ar+ ion irradiation with suitable energy and flux for each process. On the other hand, by N-2 gas addition to C2F6/H-2/Ar mixture ambient, the CNWs with n-type conducting properties can be formed. These results obtained in this study suggest that the CNWs are promising as new functional device materials in various applications.

    DOI: 10.1109/TENCON.2010.5686534

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  207. HARD X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSIS FOR ORGANIC-INORGANIC HYBRID MATERIALS FORMATION Reviewed

    Ken Cho, Kosuke Takenaka, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, Masaru Hori, Eiji Ikenaga, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima

    CHARACTERIZATION AND CONTROL OF INTERFACES FOR HIGH QUALITY ADVANCED MATERIALS III   Vol. 219   page: 183 - +   2010

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    Interactions of nitrogen plasmas with polymer surfaces were investigated using hard x-ray photoelectron spectroscopy (HXPES) to complete depth analyses of the chemical bonding states in the nano-surface layer of polymethylmethacrylate (PMMA) films via. The PMMA films were exposed to the nitrogen plasmas sustained via inductive coupling of radio-frequency (RF) power with multiple low-inductance antenna (LIA) modules. The etching rate of the PMMA films was 38 nm/min. The surface roughness of PMMA increased from 0.3 rim to 0.7 urn with increased exposure time. The HXPES was carried out for non-destructive depth analysis of chemical bonding states in the nano-surface layer of PMMA films. The HXPES results indicated that nitrogen functionalities were formed in the shallower regions up to about 27 nm from the surface without showing significant degradation of the molecular structure of PMMA due to nitrogen plasma exposure.

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  208. Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units Reviewed

    Yuichi Setsuhara, Ken Cho, Kosuke Takenaka, Akinori Ebe, Masaharu Shiratani, Makoto Sekine, Masaru Hori, Eiji Ikenaga, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima

    THIN SOLID FILMS   Vol. 518 ( 3 ) page: 1006 - 1011   2009.12

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    Plasma surface treatment of polymers has been carried out with argon/oxygen mixture plasmas driven by multiple low-inductance antenna units. Kinetic energy distribution of argon ions from the argon/oxygen mixture plasmas onto polymers showed considerable suppression of ion energies sufficiently less than 10 eV. Polyethyleneterephthalate (PET) films were exposed to argon/oxygen mixture plasma for 1-5 min on a water-cooled substrate holder. The etching depth of PET surface increased with increasing plasma-exposure time and the etching rate was 118 nm/min. Surface roughness of PET surface (root-mean-square value) increased from 0.5 nm to 2.7 nm with increasing plasma-exposure time from 0 min (original sample) to states of the PET surface. The HXPES analyses exhibited nano-surface modification of the PET surface without suffering degradation of molecular structures beneath. (C) 2009 Elsevier B.V. all rights reserved.

    DOI: 10.1016/j.tsf.2009.07.161

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  209. Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Reviewed

    KATO Kimihiko, KONDO Hiroki, SAKASHITA Mitsuo, ZAIMA Shigeaki

    IEICE technical report   Vol. 109 ( 87 ) page: 39-44   2009.6

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    To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to establish high-k/Ge stacked structures robust against thermal annealing treatments and wet processes. Ge_3N_4 is a promising candidate of an interfacial layer between high-k and Ge. In this study, we investigated formation processes of Ge_3N_4 on Ge(001) surfaces by radial nitridation, and evaluated electrical properties of Pr-oxide/Ge_3N_4/Ge structure. Stoichiometric Ge_3N_4 can be formed by the radical nitridation in a wide range of temperature from 50 to 600℃. Change in the nitridation temperature dependence of the saturated thickness suggests different dominant diffusion species. Leakage current densities of Au/Ge_3N_4/Ge MOS capacitors are minimized at a nitridation temperature of 300℃. When Pr-oxide/Ge_3N_4/Ge is formed by the radical nitridation and atomic-layer-deposition, Pr-oxynitride is formed at the Pr-oxide/Ge interface. Additionally, the interface state density in the Al/Pr-oxide/Ge_3N_4/Ge capacitor is drastically reduced by forming gas annealing.

  210. Effect of ALD-Al_2O_3 Layer on Interfacial Reaction between LaAlO and Ge Reviewed

    SAKASHITA Mitsuo, KATO Ryosuke, KYOGOKU Shinya, KONDO Hiroki, ZAIMA Shigeaki

    IEICE technical report   Vol. 109 ( 87 ) page: 61-66   2009.6

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    Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and low voltage operation devices. We have investigated effects of the ALD-Al_2O_3 layer on the interfacial reaction and the electronic characteristics of LaAlO/Al_2O_3/Ge MOS structures. Al_2O_3 interfacial layer with a thickness less than 1nm effectively suppress the interfacial reaction between LaAlO and Ge. The thickness of Ge-oxide formed at the ALD-Al_2O_3/Ge interface decreases with increasing the Al_2O_3 thickness and the stack structure is thermally stable against the post-deposition annealing at 600℃. On the other hand, the capacitance equivalent oxide thickness decreases with increasing the interfacial ALD-Al_2O_3 thickness due to the decrease of amount of Ge-oxide formed at the interface. It can be concluded that ALD-Al_2O_3 is promising as an interfacial control layer between Ge substrates and high-k dielectrcs.

  211. Pr(EtCp)_3を用いた原子層堆積法によるPr酸化膜の形成 Reviewed

    近藤 博基, 古田 和也, 松井 裕高, 坂下 満男, 財満 鎭明

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 109 ( 87 ) page: 81-85   2009.6

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    Pr(EtCp)_3を用いた原子層堆積法(ALD)によるPr酸化膜の成長手法について研究を行い,ウェハー面内での膜厚ばらつきが2%以下であるPr酸化膜のALD成長を実現した.同ALDでは主として立方晶のPr_2O_3が形成したが,Si(100)基板上のPr_2O_3膜が多結晶構造であるのに対し,Si(111)基板上では立方晶Pr_2O_3がエピタキシャル成長することがわかった.一方,Al/ALD-Pr_2O_3/Si(100)およびAl/ALD-Pr_2O_3/Si(111)MOSキャパシタの容量-電圧特性によれば,ALDによって成長した立方晶Pr_2O_3の比誘電率は12.3〜16.8であった.電子銃蒸着法や化学気相蒸着法(CVD)で成長したPr酸化膜の結晶構造および成長条件との比較から,ALDプロセスにおいてH_2O分圧を最適化することにより,Pr酸化膜の結晶構造が制御可能であると考えられる。

  212. ラジカル窒化法によるHigh-k/Ge界面構造制御

    加藤公彦, 近藤博基, 坂下満男, 財満鎭明

    信学技報   Vol. 109 ( 87 ) page: 39-44   2009.6

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  213. LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

    坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

    信学技報   Vol. 109 ( 87 ) page: 61-66   2009.6

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  214. Pr(EtCp)3を用いた原子層堆積法によるPr酸化膜の形成

    近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明

    信学技報   Vol. 109 ( 87 ) page: 81-85   2009.6

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  215. Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal-Oxide-Semiconductor Capacitors Reviewed International coauthorship International journal

    Ryosuke Kato, Shinya Kyogoku, Mitsuo Sakashita, Hiroki Kondo, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 48 ( 5 ) page: 05DA04   2009.5

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    We have investigated the interfacial control effects of the atomic layer deposition (ALD)-Al2O3 on the crystalline and electronic characteristics of LaAlO3/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopic analysis revealed that Al2O3/Ge interfaces are much more stable than LaAlO3/Ge and La2O3/Ge interfaces for the formation of Ge oxides owing to the interfacial reaction. For the LaAlO3/ALD-Al2O3/Ge structure, Al2O3 interfacial layers with thicknesses less than 1 nm effectively suppress the interfacial reaction between LaAlO3 and Ge. The thickness of Ge oxides formed at the ALD-Al2O3/Ge interface decreases with increasing Al2O3 thickness and the stack structure is thermally stable against postdeposition annealing at 600 degrees C. These results indicate that interfacial reaction mainly arises during the sputtering-LaAlO3 deposition, not the ALD-Al2O3 deposition. On the other hand, capacitance equivalent oxide thickness decreases with increasing interfacial ALD-Al2O3 thickness, because the formation of Ge oxides at the interface is effectively suppressed by ALD-Al2O3 interfacial layers. It can be concluded that ALD-Al2O3 is promising as an interfacial control layer between Ge substrates and high-k dielectrics. (C) 2009 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.48.05DA04

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  216. Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes Reviewed International coauthorship International journal

    Hiroki Kondo, Kouhei Furumai, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 48 ( 4 ) page: 04C012   2009.4

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    The annealing temperature and thickness dependences of electrical properties of mictamict Ti-Si-N gate metal-oxide-semiconductor (MOS) capacitors, and their relationships with the crystalline structure were investigated. The nanocrystallites in mictamict Ti-Si-N films sputtered in over 3.0% N-2 ambient hardly grow even after postdeposition annealing (PDA) at temperatures below 900 degrees C. As the N-2 concentration increases up to 3%, the resistivity of the Ti-Si-N films increases owing to an increase in the amount of Si3N4 components and the development of the amorphization. On the other hand, the resistivity decreases with increasing N-2 concentration above 3%. This is attributed to the formation of Ti3N4 components, as revealed by X-ray photoelectron spectroscopy (XPS) analysis. The changes in resistivity and effective work function are also extremely small. Additionally, even when the Ti-Si-N film thickness is reduced to 5 nm, the Pt/Ti-Si-N stacked gate electrode maintains almost the same effective work function (4.6 eV). (C) 2009 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.48.04C012

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  217. Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf-Si-N Gate Electrodes for Metal-Oxide-Semiconductor Field-Effect Transistors Reviewed International coauthorship International journal

    Kazuaki Miyamoto, Kouhei Furumai, Ben E. Urban, Hiroki Kondo, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 48 ( 4 ) page: 045505   2009.4

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    The dependences of crystalline structures and resistivity of Hf-Si-N films on nitrogen content were investigated in this study. The nitrogen (N) content of Hf-Si-N films increases with increasing N-2 concentration in a N-2/Ar mixture ambient used in sputtering, and saturates to about 59% at N-2 concentrations of 4.8% and above. This indicates that all Hf and Si atoms form HfN and Si3N4 in the films, respectively. From X-ray diffraction (XRD) profiles, nanocrystallites exist even in as-deposited films with saturated N content. However, they hardly grow after post deposition annealing (PDA) at 900 degrees C. The resistivity values are almost constant at N-2 concentrations of 4.8% and below. On the other hand, they significantly increase with increasing N-2 concentration above 4.8% and consequently become unmeasurable at N-2 concentrations of 13.0% and above. The XRD profiles indicate that nanocrystallites segregating in those films are related to Hf3N4. (c) 2009 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.48.045505

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  218. アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ

    宮本和明,古米孝平,近藤博基,坂下満男,財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第14回研究会)     page: 89-92   2009

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  219. アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性

    近藤博基,宮本和明,古米孝平,坂下満男,財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第14回研究会)     page: 191-194   2009

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  220. ラジカル窒化法によるGe3N4/Ge構造の形成過程

    加藤公彦,小田繁尚,近藤博基,財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第14回研究会)     page: 163-166   2009

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  221. Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果

    加藤亮祐,京極真也,坂下満男,近藤博基,財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第14回研究会)     page: 133-136   2009

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  222. Pr(EtCp)3を用いたMOCVD法によるPr酸化膜の作製およびその電気的特性の評価

    松井裕高,櫻井晋也,近藤博基,坂下満男,財満鎭明

    特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第14回研究会)     page: 125-128   2009

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  223. Analyses on Crystalline Structures of Carbon Nanowalls by Grazing-Incidence X-Ray Diffraction Using Synchrotron Light Source Invited Reviewed

    Wakana Takeuchi, Hiroki Kondo, Masaru Hori

    SPring-8 Research Frontier 2009     page: 62-63   2009

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  224. Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si Structures Reviewed

    Mizutani Takuya, Nakatsuka Osamu, Sakai Akira, Kondo Hiroki, Zaima Shigeaki

    Transactions of the Materials Research Society of Japan   Vol. 34 ( 2 ) page: 305 - 308   2009

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    We have investigated the anisotropic strain structure of micro-patterned Ge/Si<sub>1-x</sub>Ge<sub>x</sub> mesa lines. The elastic strain-relaxation of a Si<sub>1-x</sub>Ge<sub>x</sub> layer by micro-patterning induces an uniaxial tensile strain into a Ge layer only for the direction perpendicular to the line. The pattern size dependence on the behavior of the elastic strain-relaxation of Si<sub>1-x</sub>Ge<sub>x</sub> layers is analyzed by FEM. Additionally, the XRD results for micro-patterned samples suggest that the overetching depth of the Si substrate also influenced the strain-relaxation of the Si<sub>1-x</sub>Ge<sub>x</sub> layers and the tensile-strain value of the Ge layers.

    DOI: 10.14723/tmrsj.34.305

  225. Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films Reviewed International coauthorship International journal

    Hiroki Kondo, Tomonori Ueyama, Eiji Ikenaga, Keisuke Kobayashi, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

    THIN SOLID FILMS   Vol. 517 ( 1 ) page: 297 - 299   2008.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE SA  

    High-density and similarly-sized Si nanodots were formed by annealing ultra-thin amorphous Si (a-Si) films deposited on SiO2/Si substrates in vacuum. Dependences of density and diameter of the Si nanodots on the a-Si film thickness and, annealing temperature and time were investigated by scanning electron microscopy. It is found that drastic increase (decrease) in the density (diameter) occurred at an a-Si thickness of 1 nm. By agglomeration of sub-nanometer thick a-Si films, a density larger than 10(12) cm(-2), an average diameter smaller than 5 nm, and a dispersion of diameter less than 15% were achieved. (c) 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2008.08.079

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  226. Silicide and germanide technology for contacts and gates in MOSFET applications Invited Reviewed International coauthorship International journal

    Shigeaki Zaima, Osamu Nakatsuka, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa

    THIN SOLID FILMS   Vol. 517 ( 1 ) page: 80 - 83   2008.11

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    We report silicide and germanide technology for ohmic contacts and metal gates of MOSFETs in this paper. We have investigated the control technology of NiSi/Si contact properties by incorporating third elements such as Ge and C for future ULSI applications. The work function and resistivity of various Ni and Pt germanides have been also examined as metal gate materials. The low resistivity and tunable work function of these silicides and germanides are desirable for future CMOS devices. (c) 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2008.08.097

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  227. Analysis of Uniaxial Tensile Strain in Microfabricated Ge/Si1-x Gex Structures on Si(001) Substrates

    T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, S. Zaima

    4th International WorkShop on New Group IV Semiconductor Nanoelectronics     2008.9

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  228. MOCVD法によるPr酸化膜の作製およびその電気的特性評価 Reviewed

    近藤博基, 櫻井晋也, 酒井朗, 小川正毅, 財満鎭明

    信学技報   Vol. 108 ( 80 ) page: 71-75   2008.6

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  229. MOCVD法によるPr酸化膜の作製およびその電気的特性評価 Invited Reviewed

    近藤博基, 櫻井晋也, 酒井朗, 小川正毅, 財満鎭明

    信学技報   Vol. 108 ( 80 ) page: 71-75   2008.6

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  230. Oxidation and radical nitridation processes of Ge surfaces and fabrication of High-k/Ge stack structures Reviewed

    KONDO Hiroki, SAKASHITA Mitsuo, NAKATSUKA Osamu, OGAWA Masaki, ZAIMA Shigeaki

      Vol. 2008 ( 1 ) page: 17-22   2008.5

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  231. Crystalline and electrical properties of mictamict TiSiN gate metal-oxcide-semiconductor capacitors Reviewed International coauthorship International journal

    Kouhei Furumai, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 47 ( 4 ) page: 2420 - 2424   2008.4

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    The crystal structures and electrical characteristics of Ti-Si-N metal-oxide-semi conductor (MOS) gate electrodes in the mictamict state, which is a comprehensive term referring to amorphous structures both with and without nanocrystals, were investigated. By increasing the N-2 concentration of the sputtering ambient, the nitrogen (N) content of the Ti-Si-N films increased and consequently the Ti-Si-N films did not crystallize. At a N-2 concentration of more than 3.0%, the N content of the films was almost constant at about 53%, which indicates that all Ti and Si atoms deposited in the form of TiN and Si3N4, respectively. In such Ti-Si-N films with a saturated N content, only 2-3-nm-grain-size nanocrystallites formed, which were embedded in amorphous layers even after post-deposition annealing (PDA) above 900 degrees C. At the same time, with increasing N2 concentration of the sputtering ambient, the change in the film resistivity after the PDA became smaller and the capacitance equivalent thickness (CET) fluctuation gradually ceased to occur. The work function of the mictamict Ti-Si-N gate electrodes, which were deposited in 5.0% N-2 ambient and annealed at 500 degrees C, was determined to be 4.6eV.

    DOI: 10.1143/JJAP.47.2420

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  232. Development of high-density radical source for radical nitridation process in ULSI technology development of high-density radical source for radical nitridation process in ULSI technology Reviewed

    H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano

    The International Conference on Plasma-NanoTechnology and Science     2008.3

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  233. Ge基板上に作製したPr酸化膜の評価 Reviewed

    坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-(第13回研究会)     2008.1

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  234. 窒素ラジカル暴露によるGe(001)表面処理 Reviewed

    近藤博基, 藤田美里, 酒井朗, 小川正毅, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-(第13回研究会)     2008.1

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  235. ミクタミクトTiSiNゲートMOSキャパシタの結晶構造及び電気的特性の評価 Reviewed

    古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-(第13回研究会)     2008.1

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  236. Formation of Ge3N4/Ge structures using nitrogen radicals and their thermal stability Reviewed International coauthorship International journal

    H. Kondo, S. Oda, M. Ogawa, S. Zaima

    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES   Vol. 16 ( 10 ) page: 717 - +   2008

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    Formation of Ge3N4 oil Ge(001) substrates by nitrogen radicals and their thermal stability were investigated in this study. A Ge3N4/Ge structure with a root-mean-square surface roughness of 0.18 nm is successfully formed by layer-by-layer manner at a substrate temperature of 300 degrees C. In contrast, island growth and thermal decomposition of Ge3N4 occur during the nitridation at 600 degrees C, and consequently island structures and locally-flat areas are formed. Ge3N4 thickness is saturated at a certain nitridation time and, not only saturation times but also saturation thicknesses are different depending oil plasma condition. By a 2-step nitridation in which the nitridation at 300 degrees C and 600 degrees C for 900 see were sequentially subjected to Ge surfaces, a Ge3N4 thickness much larger than that at the single-step nitridation call be obtained without surface roughening.

    DOI: 10.1149/1.2986828

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  237. シリコン表面の窒化初期過程とエネルギーバンドキャップの形成 Invited Reviewed

    近藤博基, 財満鎭明, 堀勝, 酒井朗, 小川正毅

    真空   Vol. 50   page: 665-671   2007.11

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  238. Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes Reviewed

    H. Kondo, D. Ikeno, Y. Kaneko, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

    The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing     2007.11

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  239. Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors Reviewed

    FURUMAI Kouhei, KONDO Hiroki, SAKASHITA Mitsuo, SAKAI Akira, OGAWA Masaki, ZAIMA Shigeaki

    Extended abstracts of the ... Conference on Solid State Devices and Materials   Vol. 2007   page: 342-343   2007.9

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  240. Pr-oxide-based dielectric films on Ge substrates Reviewed

    M. Sakashita, N. Kito, A. Sakai, H. Kondo, O. Nakatsuka, M. Ogawa, S. Zaima

    Extended Abstracts of the 2007 International Conference on Solid State Device and Materials   Vol. 2007 ( 85 ) page: 330 - 331   2007.9

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  241. Surface treatment of Ge(001) surface by radical nitridation Reviewed

    H. Kondo, M. Fujita, A. Sakai, M. Ogawa, S. Zaima

    Extended Abstracts of the 2007 International Conference on Solid State Device and Materials   Vol. 2007   page: 1036-1037   2007.9

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  242. Evaluation and Controlling Technology of Dislocation and Strains in Si_<1-x>Ge_X/Si(001) Structures

    Nakatsuka Osamu, Sakai Akira, Kondo Hiroki, Ogawa Masaki, Zaima Shigeaki

    Proceedings of the Society Conference of IEICE   Vol. 2007 ( 2 ) page: "S-12"-"S-13"   2007.8

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  243. Development of new high-density radical sources and its application to radical nitridation of Ge surfaces

    H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano

    The 20th Symposium on Plasma Science for Materials     2007.6

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  244. Composition dependence of work function in metal (Ni,Pt)-germanide gate electrodes Reviewed

    Daisuke Ikeno, Yukihiro Kaneko, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 46 ( 4B ) page: 1865 - 1869   2007.4

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    The composition ratio dependence of electrical (work function and resistivity) and structural properties in metal (Ni,Pt)-germanide gate electrodes was investigated for metal-oxide-semiconductor (MOS) devices. X-ray diffraction and cross-sectional transmission electron microscopy clearly revealed that metal-germanide MOS gate electrodes with a single Ni-germanide (Ni-Ge) or Pt-germanide (Pt-Ge) phase can be formed by controlling the thicknesses of the deposited metal and Ge. The resistivities of both Ni-Ge and Pt-Ge were lower than that of conventional polycrystalline silicon (poly-Si) gate electrodes. From the capacitance-voltage characteristics, the work functions of the Ni-Ge gate electrodes were measured to be from 4.6 to 4.9 eV, and those of the Pt-Ge gate electrodes were from 4.9 to 5.3 eV. With increasing metal (Ni,Pt) content, the work function of Ni-Ge decreased, while that of Pt-Ge increased. This composition dependence of the work function of the metal-germanide can be explained by considering the electronegativity of the pure metals that are often used.

    DOI: 10.1143/JJAP.46.1865

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  245. Growth and energy bandgap formation of silicon nitride films in radical nitridation Reviewed

    Hiroki Kondo, Keigo Kawaai, Akira Sakai, Masaru Hori, Shigeaki Zaima, Yukio Yasuda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 46 ( 1 ) page: 71 - 75   2007.1

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    The surface profiles and energy bandgap of sub-nanometer-thick silicon nitride layers, which were formed by radical nitridation, were analyzed by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). According to the STM results, the surface roughness of the nitride layers depends only on substrate temperature regardless of radio frequency (RF) power, which indicates that the growth mode of the silicon nitride layer in radical nitridation is attributed to the surface silicon atom migration but does not depend on the types of nitrogen radical. In contrast, STS spectra show that the energy bandgap of the silicon nitride layer is significantly changed with not only substrate temperature but also RF power. The densities of nitrogen radicals were analyzed by absorption and emission spectroscopy, which suggests that the contribution of the excited-state nitrogen atoms to radical nitridation increases as RF power increases. The monolayer-thick nitride layer with both an atomically flat surface and a wide energy bandgap can be formed under appropriate conditions, because they are limited by different thermaly activated features.

    DOI: 10.1143/JJAP.46.71

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  246. Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates Reviewed

    Shogo Mochizuki, Akira Sakai, Osamu Nakatsuka, Hiroki Kondo, Katsunori Yukawa, Koji Izunome, Takeshi Senda, Eiji Toyoda, Masaki Ogawa, Shigeaki Zaima

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 22 ( 1 ) page: S132 - S136   2007.1

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    We have investigated dislocation morphology and strain relaxation mechanisms of SiGe and Ge sub-micron wide striped mesa lines patterned on Si(0 0 1) substrates. The patterning of SiGe and Ge layers principally leads to asymmetric elastic strain relaxation. Post-patterning anneal induces 60 degrees dislocation introduction to relax the strain but the narrower the line width the more dominant is the elastic strain relaxation. In the case of 250 nm wide SiGe lines, 60 degrees dislocation introduction along the line is critically suppressed so that asymmetric strain distribution is realized. On the other hand, for the Ge line structure, pre-formed pure edge dislocations elongate along both orthogonal directions at the heterointerface independent of the line geometry even with the line width of 250 nm. Thus strain relaxation occurs symmetrically and rigidly. These results can be explained by deference of the introduction and propagation mechanisms of 60 degrees and pure-edge dislocations.

    DOI: 10.1088/0268-1242/22/1/S31

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  247. Pt-germanideゲート電極の結晶構造及び電気的特性の評価”

    池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”(第12回研究会)     2007.1

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  248. パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

    鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”(第12回研究会)     2007.1

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  249. Initial Stage of Processes and Energy Bandgap Formation in Nitridation of Silicon Surface Using Nitrogen Radicals Reviewed

    KONDO Hiroki, ZAIMA Shigeaki, SAKAI Akira, SAKAI Akira, OGAWA Masaki

    Shinku   Vol. 50 ( 11 ) page: 665-671   2007

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    &nbsp;&nbsp;Initial stage of processes and energy bandgap formation in nitridation of silicon surfaces using nitrogen radicals have been studied. According to scanning tunneling microscopy observations and scanning tunneling spectroscopy measurements, at the initial stage of nitridation, linear defects perpendicular to dimmer rows were formed to coincide with an initial nitridation reaction preferentially at backbonds of surface Si atoms. After the nitride formation, the surface roughness depends only on substrate temperature regardless of radio frequency (RF) power, which means that the growth mode of nitrides is attributed to the surface migration. Contrary, the energy bandgap of silicon nitrides is significantly affected by not only substrate temperature but also RF power. Absorption and emission spectroscopy results suggest that the contribution of the excited-state nitrogen atoms to the nitridation increases with increasing the RF power. Control of surface migration and radical species is crucial to form the monolayer-thick nitride layer with both an atomically flat surface and a wide energy bandgap.<br>

    DOI: 10.3131/jvsj.50.665

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  250. Dislocation structure and strain relaxation of SiGe and Ge sub-micron stripe lines on Si(001) substrates

    O. Nakatsuka, S. Mochizuki, A. Sakai, H. Kondo, K. Yukawa, M. Ogawa, S. Zaima

        2006.10

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  251. Interfacial structure of HfON/SiN/Si gate stacks

    O. Nakatsuka, M. Sakashita, H. Kondo, E. Ikenaga, M. Kobata, J.-J. Kim, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima

    The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy     2006.9

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  252. Systematic characterization of Ni full silicide in sub-100 nm gate regions Reviewed

    D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, S. Zaima

        2006.4

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  253. Therapeutic effects of the combination of methotrexate and bucillamine in early rheumatoid arthritis: A multicenter, double-blind, randomized controlled study Reviewed

    Ichikawa Y.

    Modern Rheumatology   Vol. 15 ( 5 ) page: 323-328   2005.10

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    DOI: 10.1007/s10165-005-0420-z

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  254. Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy Reviewed

    ZAIMA Shigeaki, SEKO Akiyoshi, WATANABE Yukihiko, SAGO Toshifumi, SAKASHITA Mitsuo, KONDO Hiroki, SAKAI Akira, OGAWA Masaki

    Extended abstracts of the ... Conference on Solid State Devices and Materials   Vol. 2005   page: 236-237   2005.9

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  255. Analysis of stressed-gate SiO2 films with electron injection by conductive atomic force microscopy Reviewed

    A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, Y. Yasuda

    Electronics and Communications in Japan Part Ii-Electronics   Vol. 88 ( 6 ) page: 18-26   2005

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  256. Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conductive Atomic Force Microscopy Invited Reviewed

    SEKO Akiyoshi, WATANABE Yukihiko, KONDO Hiroki, SAKAI Akira, ZAIMA Shigeaki, YASUDA Yukio

    The Transactions of the Institute of Electronics, Information and Communication Engineers C   Vol. J87-C ( 8 ) page: 616-624   2004.10

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  257. Analysis of Local Leakage Current in Gate Dielectric by Conductive Atomic Force Microscopy Reviewed

    SEKO Akiyoshi, WATANABE Yukihiko, KONDO Hiroki, SAKAI Akira, ZAIMA Shigeaki, YASUDA Yukio

    Technical report of IEICE. SDM   Vol. 104 ( 135 ) page: 31-36   2004.6

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    We have studied local leakage currents of thin gate dielectric films by conductive atomic force microscopy (C-AFM). Local current spots were observed in the current images of the gate SiO_2 films of MOS capacitors in which electrical stress were applied. According to current-voltage characteristics, current spots were attributed to the stress-induced defects where holes were trapped. Charge trapping and detrapping in the stress-induced defects were also observed. They are found to be consistent with degradation characteristics of the MOS devices. And then, breakdown occurred at the local leakage current sites in the case of the stressed films. 0n the other hands, the relationship between leakage current pass and crystal structures were also investigated for high-k gate materials.

  258. Analysis of Formation Mechanism of the Energy Bandgap in the Radical Nitridation Process Reviewed

    KONDO Hiroki, KAWAAI Keigo, MIYAZAKI Kayoko, SAKAI Akira, ZAIMA Shigeaki, YASUDA Yukio

    Technical report of IEICE. SDM   Vol. 104 ( 134 ) page: 27-32   2004.6

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    We have investigated initial growth process in the radical nitridation by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The surface profiles of the nitride layers are independent to RF power applied to the radical-gun and only depend on substrate temperature. It indicates that the silicon nitride growth mode is attributed to the surface silicon atom migration but doesn't depend on kind of reactive species. 0n the other hand, the energy bandgap of the nitride layer is significantly changed with RF power. According to the emission and absorption spectroscopy of the nitrogen plasma, it is deduced that the contribution of the excited-state nitrogen atoms to the radical nitridation increases as RF power increases. Since silicon nitride growth and energy bandgap formation have different thermal-activated mechanisms, atomically flat surface and wide energy bandgap are compatible by the control of reactive species.

  259. 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析 : ゲート絶縁膜劣化機構の微視的評価 Reviewed

    世古 明義, 渡辺 行彦, 近藤 博基, 酒井 朗, 財満 鎭明, 安田 幸夫

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 103 ( 148 ) page: 1-6   2003.6

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    電流検出型原子間力顕微鏡法(Conducting Atomic Force Microscopy :C-AFM)を用いて、Metal-Oxide-Semiconductor(MOS)キャパシタで観測される絶縁膜劣化を、ナノスケールで直接観察する手法を開発した。定電流ストレスを印加したシリコン酸化膜を本手法によって観察した結果、Transient Stress-Induced Leakage Current (Transient-SILC)と考えられる局所リーク電流スポットが観測された。これにより、ストレス誘起される膜中欠陥の局所性と分布、それらに起因した局所的なリーク伝導機構が実験的に明らかになった。

  260. Direct detection of single nucleotide polymorphism (SNP) with genomic DNA by the ferrocenylnaphthalene diimide-based electrochemical hybridization assay (FND-EHA). Reviewed

      Vol. 19 ( 1 ) page: 79 - 83   2003.1

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    DOI: 10.2116/analsci.19.79

    PubMed

  261. 高不純物濃度低次元系におけるホッピング伝導とクーロンブロッケード現象 Reviewed

    近藤 博基

    博士号学位論文     1999.3

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    Authorship:Lead author   Language:Japanese  

    DOI: 10.11501/3152127

  262. Conductance oscillations in hopping conduction systems fabricated by focused ion beam implantation Reviewed

    Kondo H, Iwano H, Nakatsuka O, Kaga K, Zaima S, Yasuda Y

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 36 ( 6B ) page: 4046 - 4048   1997.6

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Books 4

  1. Nucleation and Vertical Growth of Nano-Graphene Sheets

    Hiroki Kondo, Masaru Hori and Mineo Hiramatsu ( Role: Joint author)

    Intech  2011.9  ( ISBN:978-953-307-292-0

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    Language:English

  2. New Progress on Graphene Research/Graphene Nanowalls

    Mineo Hiramatsu, Hiroki Kondo, Masaru Hori( Role: Joint author)

    InTech  2013.3  ( ISBN:9789535110910

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    Responsible for pages:10.5772/3358,Chapter9   Language:English

  3. 単一電子トラップ直視技術の開発とそれを用いた極薄ゲート絶縁膜の劣化機構の解明

    近藤 博基( Role: Joint author)

    名古屋大学  2005.3 

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    Language:Japanese Book type:Report

    CiNii Books

  4. 高不純物濃度低次元系におけるホッピング伝導とクーロンブロッケード現象 Reviewed

    近藤 博基( Role: Joint author)

    名古屋大学  1999.3 

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    Language:Japanese Book type:Scholarly book

    CiNii Books

MISC 2

  1. Optimized properties of carbon nanowall surface for laser desorption / ionization mass spectrometry

    SAKAI Ryusei, ICHIKAWA Tomonori, IMAI Shun, KONDO Hiroki, ISHIKAWA Kenji, OHTA Takayuki, HIRAMATSU Mineo, SEKINE Makoto, HORI Masaru

    プラズマプロセシング研究会プロシーディングス(CD-ROM)   Vol. 37th   2019

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  2. 大気圧プラズマ処理による異種材料接合

    近藤博基, 堤隆嘉, 石川健治, 関根 誠, 堀 勝

    化学工学(公益社団法人 化学工学会)   Vol. 82 ( 9 ) page: 487-490   2018.9

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

Presentations 702

  1. Arイオン照射窒化ガリウム表面の塩素吸着層のイオンエネルギー依存性 (2) Invited

    谷川 将希, 堤 隆嘉, 谷出 敦, 近藤 博基, 関根 誠, 石川 健治, 堀 勝

    第67回応用物理学関係連合講演会  2020.3.14  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  2. Effect of multiphase plasma irradiation on alcohols for functional nanographene materials Invited International conference

    Hiroki Kondo and Masaru Hori

    Gaseous Electronics Symposium 3  2020.2.3 

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    Event date: 2020.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Rogla   Country:Slovenia  

  3. Gene expression analyses revealed the differences of intracellular molecular mechanisms of PAM- and PAL-induced cell death Invited International conference

    Hiromasa Tanaka, Masaaki Mizuno, Yuko Katsumata, Kenji Ishikawa, Hiroki Kondo, Hiroshi Hashizume, Yasumasa Okazaki, Shinya Toyokuni, Kae Nakamura, Nobuhisa Yoshikawa, Hiroaki Kajiyama, Fumitaka Kikkawa, and Masaru Hori

    12th Asian-European International Conference on Plasma Surface Engineering  2019.9.1 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Jeju   Country:Korea, Republic of  

  4. Plasma-assisted Synthesis and Modification of Carbon Nanowalls for Emerging Applications Invited International conference

    Hiroki Kondo, Takayoshi Tsutsumi, Keigo Takeda, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Mineo Hiramatsu

    International Conference Nano-M&D 2019: "Properties, Fabrication and Applications of Nano-Materials and Nano-Devices"  2019.6.8 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Paestum   Country:Italy  

  5. Synthesis mechanism and electrochemical properties of nanographene materials obtained by in-liquid plasma method Invited International conference

    Hiroki Kondo, Keigo Takeda, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Global Conference on Carbon Nanotubes and Graphene Technologies  2019.3.29 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Milano   Country:Italy  

  6. Nano-composite innovation based on carbon nanowalls and advanced plasma processes Invited International conference

    Hiroki Kondo, Takayoshi Tsutsumi, Makoto Sekine, Kenji Ishikawa, Masaru Hori, Mineo Hiramatsu

    7th International Conference on Advanced Plasma Technologies (ICAPT-7)  2019.2.25 

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    Event date: 2019.2 - 2019.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hue   Country:Viet Nam  

  7. カーボンナノウォールの構造制御とナノバイオ応用 Invited

    近藤博基、堀勝、平松美根男(名古屋大学大学院工学研究科付属プラズマナノ工学研究センター、名城大学理工学部)

    仙台“プラズマフォーラム’’ 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学 大学院工学研究科 電子情報システム・応物系 1号館別館 451・453会議室   Country:Japan  

  8. High-density nitrogen plasma source for growing high In content InGaN by plasma-assisted MBE International conference

    Hiroki Kondo, Masaru Hori, Hiroshi Amano

    SPIE Photonics west 2015  2015.2.9 

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    Event date: 2015.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  9. 液中プラズマを用いたナノグラフェン合成における活性種の効果[II]

    近藤 博基, 濱地 遼, 堤 隆嘉, 石川 健治, 関根 誠, 堀 勝

    第68回応用物理学会春季学術講演会  2021.3.19  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  10. 塩素吸着を用いた窒化ガリウムの原子層エッチングプロセス特性のArイオンエネルギー依存性

    堤 隆嘉、長谷川 将希、中村 昭平、谷出 敦、近藤 博基、関根 誠、石川 健治、堀 勝

    第68回応用物理学会春季学術講演会  2021.3.16  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  11. リモート酸素ラジカルによるグラフェンのエッチング反応の分析

    胡 留剛、堤 隆嘉、蕭 世男、近藤 博基、石川 健治、関根 誠、堀 勝

    第68回応用物理学会春季学術講演会  2021.3.19  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  12. Crystalline Structures and Local Electrical Conductivity at Crossing Points of Carbon Nanowalls International conference

    Atsushi Ozaki, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Mineo Hiramatsu and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  13. Dependence of Nitrogen Concentrations on Cytotoxicity of Air-Free Ar-N2 Mixed Atmospheric Pressure Plasma-activeted Lactated Solutions International conference

    Daiki Ito, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.10 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Virtual Meeting  

  14. Fablication of Pt-Supported Carbon Nanowalls for Polymer Electrolyte Fuel Cell International conference

    Takayuki Ohta, Hiroaki Iwata, Mineo Hiramatsu, Hiroki Kondo and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.9 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Virtual Meeting  

  15. Quantitative Analyses of Graphene Layer Etching Using Oxygen Radicals Generated in Remote Plasma for Realization of Atomic Layer Etching International conference

    Liugang Hu, Takayoshi Tsutsumi, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Virtual Meeting  

  16. Initial Growth Kinetics of Hydrogenated Amorphous Carbon Films Observed by Real- Time Ellipsometry International conference

    Jumpei Kurokawa, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Virtual Meeting  

  17. Synthesis of Carbon Nanowalls on Different Metallic Substrates by RI- PECVD International conference

    Ngo Van Nong, Dennis Christy, Swapnil Ghodke, Hiroki Kondo, Osamu Oda and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.9 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  18. Reversible Change in Surface Morphology of Lipid Bilayer Induced by Indirect Plasma Irradiation International conference

    Hiroki Kondo, Takuya Tonami, Sotaro Yamaoka, Hiromasa Tanaka, Kenji Ishikawa, Makoto Sekine, Masafumi Ito and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.9 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  19. Effect of Wall-to-Wall Distance of Carbon Nanowalls on Survival Yield in Surface-Assisted Laser Desorption/Ionization Mass Spectrometry International conference

    Ryusei Sakai, Hiroki Kondo, Kenji Ishikawa, Takayuki Ohta, Mineo Hiramatsu, Naohiro Shimizu and Masaru Hori

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology and Science (ISPlasma2021/IC-PLANTS2021)  2021.3.9 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  20. Antitumor effect of plasma-activated Ringer’s acetate solution International conference

    Yuki Suda, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Takayoshi Tsutsumi, Hiroki Kondo, Makoto

    30th Annual Meeting of Material Research Society of Japan (MRS-J)  2020.12.10 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  21. Penetration of hydrogen atoms and termination of dangling bonds in amorphous carbon films International conference

    Hiroki Kondo, Yasuyuki Ohashi, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    73th Annual Gaseous Electronics Virtual Conference, Virtual Conference  2020.10.9 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  22. Structure control of self-supporting graphene nanowalls synthesized by plasma enhanced chemical vapor deposition International conference

    Keigo Takeda, Motoaki Ishikawa, Mineo Hiramatsu, Hiroki Kondo, and Masaru Hori

    73th Annual Gaseous Electronics Virtual Conference  2020.10.7 

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    Event date: 2020.10

    Language:English   Presentation type:Poster presentation  

    Venue:Virtual Meeting  

  23. 表面支援レーザー脱離/イオン化質量分析法に向けたカーボンナノウォールの壁間隔依存性

    酒井 流星、近藤 博基、石川 健治、清水 尚博、太田 貴之、平松 美根男、堀 勝

    第81回応用物理学会秋季学術講演会  2020.9.9  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  24. 液中プラズマを用いたナノグラフェン合成における活性種の効果

    近藤 博基、濱地 遼、堤 隆嘉、石川 健治、関根 誠、堀 勝

    第81回応用物理学会秋季学術講演会  2020.9.9  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  25. カーボンナノウォールの局所電気伝導特性の解明

    尾崎 敦士、近藤 博基、石川 健治、堤 隆嘉、平松 美根男、関根 誠、堀 勝

    第81回応用物理学会秋季学術講演会  2020.9.9  応用物理学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  26. Analysis of Ion Energy Dependence of Depth Profile of GaN by In-situ Surface Analysis International conference

    Masaki Hasagawa‚ Takayoshi Tsutsumi, Atsushi Tanide‚ Shohei Nakamura, Hiroki Kondo‚ Kenji Ishikawa‚ and Masaru Hori

    20th International Conference on Atomic Layer Deposition  2020.6.29 

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    Event date: 2020.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Virtual Meeting  

  27. 液中プラズマを用いたナノグラフェン合成における照射時間依存性[Ⅰ]

    濱地 遼, 近藤 博基, 堤 隆嘉, 石川 健治, 関根 誠, 堀 勝

    第67回応用物理学関係連合講演会  2020.3.12  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  28. プラズマプロセス中の基板温度分布の経時変化の解析

    堤 隆嘉, 石川 健治, 近藤 博基, 関根 誠, 堀 勝

    第67回応用物理学関係連合講演会  2020.3.15  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  29. 水素プラズマによる欠陥終端処理後のa-C:H膜に対する表面増強ラマン分光法による分析

    古橋 未悠, 野老山 貴行, 大橋 靖之, 近藤 博基, 上坂 裕之, 中島 悠也, 古木 辰也, 石川 健治, 堀 勝, 梅原 徳次

    第67回応用物理学関係連合講演会  2020.3.15  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  30. 液中プラズマ表面改質六方晶BN微粒子のESR測定

    伊藤 剛仁, 後藤 拓, 井上 健一, 石川 健治, 近藤 博基, 堀 勝, 清水 禎樹, 伯田 幸也, 寺嶋 和夫

    第67回応用物理学関係連合講演会  2020.3.12  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  31. 液中プラズマを用いたナノグラフェン合成における照射時間依存性 [II]

    近藤 博基, 濱地 遼, 堤 隆嘉, 石川 健治, 関根 誠, 堀 勝

    第67回応用物理学関係連合講演会  2020.3.12  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都, 上智大学 四谷キャンパス   Country:Japan  

  32. Termination of Dangling Bonds in Amorphous Carbon Films by Hydrogen Atoms International conference

    Yasuyuki Ohashi, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  33. Dynamic Morphological Change of Lipid Bilayer Induced by Indirect Plasma Irradiation International conference

    Hiroki Kondo, Takuya Tonami, Sotaro Yamaoka, Hiromasa Tanaka, Kenji Ishikawa, Makoto Sekine, Masafumi Ito, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  34. Measurement of Spatial Distribution of Absolute Hydrogen Radical Density in NonEquilibrium Atmospheric Pressure Plasma by Vacuum Ultraviolet Absorption Spectroscopy International conference

    Kaede Katsuno, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  35. In-Liquid Plasma Synthesis of Iron-Nitrogen-Doped Carbon Nanoflakes with Highly Catalytic Activity International conference

    Ryo Hamaji, Tomoki Amano, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Keigo Takeda, Mineo Hiramatsu, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  36. Effect of Chamber Pressure on the Crystal Quality of InN Growth by Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) International conference

    Frank Wilson Amalraj, Naohiro Shimizu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  37. Ionization Enhancement Using CNWs in Laser Desorption / Ionization Mass Spectrometry International conference

    Ryusei Sakai, Hiroki Kondo, Kenji Ishikawa, Takayuki Ohta, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  38. Fluctuation of Local Electrical Conductivity in Carbon Nanowalls Observed by Conductive Atomic Force Microscopy International conference

    Atsushi Ozaki, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology and Science (ISPlasma2020/IC-PLANTS2020)  2020.3.11 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  39. In-plane distribution of electrical conductivity of carbon nanowalls perpendicular to substrate measured by conductive atomic force microscopy International conference

    Atsushi Ozaki, Hiroki Kondo, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori, and Mineo Hiramatsu

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020 and 4th International Symposium on Energy Research and Application  2020.1.10 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gyeong Gi-do   Country:Korea, Republic of  

  40. Improvement of wool surface charging properties by plasma surface modification process International conference

    Tatsuyuki Moriyama, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Kenji Ishikawa, and Masaru Hori

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020 and 4th International Symposium on Energy Research and Application  2020.1.10 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gyeong Gi-do   Country:Korea, Republic of  

  41. Changes of resistive elements during degradation of carbon nanowalls electrodes for fuel cell synthesized employing a CH4/H2 mixture gas plasma International conference

    Hiroki Kondo, Shun Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    2019 Fall Meeting of Material Research Society (MRS)  2019.12.13 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Boston   Country:United States  

  42. Synthesis of Carbon Nanostrucures using Microwave-Exited Atmospheric Pressure Plasma Invited International conference

    M. Hiramatsu, K. Miyashita, T. Oyama, K. Takeda, H. Kondo, M. Hori

    2019 Fall Meeting of Material Research Society (MRS)  2019.12.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Boston   Country:United States  

  43. Physics and chemistry in low-temperature plasma bioapplications Invited International conference

    Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Fumitaka Kikkawa, Masaaki Mizuno, and Masaru Hori

    7th East Asia Joint Symposium on Plasma and Electrostatics Technologies for Environmental Applications (EAPETEA-7)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Okinawa   Country:Japan  

  44. Electrical, optical, and physicochemical behaviors of atmospheric pressure plasma jet generated in open air Invited

    Keigo Takeda, Kenji Ishikawa, Takayuki Tsutsumi, Hiroki Kondo, Makoto Sekine, Masaru Hori

    3rd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2019)  2019.11.6 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hefei   Country:China  

  45. Plasma Processing with Feedback Control of Wafer Temperature By Non-Contact Temperature Measurement System International conference

    T. Tsutsumi, H. Kondo, K. Ishikawa , K. Takeda, T. Ohta, M. Sekine, M. Ito, and M. Hori

    236th Fall Meeting of the Electrochemical Society (ECS)  2019.10.16 

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Atlanta   Country:United States  

  46. Synthesis of carbon nanomaterials employing in-liquid plasma Invited International conference

    Makoto Sekine, Hiroki Kondo, Kenji Ishikawa, Masaru Hori, and Mineo Hiramatsu

    7th International Conference on Advanced Plasma Technologies  2019.2.25 

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    Event date: 2019.2 - 2019.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hue   Country:Viet Nam  

  47. Real-time control of a wafer temperature for uniform plasma process International conference

    Tsutsumi T.

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ISSM.2018.8651183

    Scopus

  48. Control of internal plasma parameters toward atomic level processing International conference

    Sekine M.

    ECS Transactions 

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    Event date: 2016

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1149/07506.0021ecst

    Scopus

  49. 半導体ディバイス・プロセスの信頼性工学

    近藤博基

    第10回日本安全学教育研究会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  50. Electrocatalytic Characteristic of Pt Nanoparticles-Supported Carbon Nanowalls for Fuel Cell Applications International conference

    Hiroki Kondo

    2015 MRS Spring Meeting & Exhibit 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  51. Electrocatalytic Property and Durability of Pt Nanoparticles-Supported Nanographene Synthesized by In-Liquid Plasma International conference

    Hiroki Kondo

    2015 MRS Spring Meeting and Exhibit 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  52. 次世代窒化ガリウム系デバイスのためのラジカル励起MOCVDによるGaN-ヘテロエピタキシャル成長に関する研究

    盧翌、岩本一希、小田修、石川健治、近藤博基、関根誠、堀勝(名大)

    ゲートスタック研究会ー材料・プロセス・評価の物理ー (第20回) 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東レ研修センター   Country:Japan  

  53. ラジカル励起MOCVD法によるGaNホモエピタキシャル成長に関する研究

    岩本一希、盧翌、小田修、近藤博基、石川健治、関根誠、堀勝(名大)

    ゲートスタック研究会ー材料・プロセス・評価の物理ー (第20回) 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東レ研修センター   Country:Japan  

  54. Selective and oriented growth of carbon nanowalls by plasma-enhanced chemical vapor deposition International conference

    H.Kondo

    The 75th IUVSTA Workshop on Sheath Phenomena in Plasma Processing of Advanced Materials(19th-23rd 2015,Slovenia) 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Slovenia  

  55. 地域イノベーションプラットフォーム概略紹介

    近藤博基

    大気圧プラズマによる超高速・超機能化異種材料接合オープンプラットフォーム 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  56. Live demonstration: A CMOS sensor platform with 1.2 μm × 2.05 μm electroless-plated 1024 × 1024 microelectrode array for high-sensitivity rapid direct bacteria counting International conference

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/BioCAS.2014.6981688

    Scopus

  57. Growth Mechanism of Single-Walled Carbon Nanotubes from Pt Catalysts by Alcohol Catalytic CVD International conference

    Takahiro Maruyama, Hiroki Kondo, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka and Sumio Iijima

    2014 MRS Fall Meeting & Exhibit 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  58. Electron spin Resonance Study of Plasma-Activated-Media (PAM) International conference

    Masaru Hori, Naoyuki Kurake, Kenji Ishikawa, Hiromasa Tanaka, Takashi Kondo, Kae Nakamura, Hiroaki Kajiyama, Fumitaka Kikkawa, Masaaki Mizuno, Keigo Takeda, Hiroki Kondo and Makoto Sekine

    2014 MRS Fall Meeting & Exhibit 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  59. Plasma-Enhanced Synthesis and Edge-Modification of Carbon Nanowalls for Nano-Bio Applications International conference

    Hiroki Kondo, Mineo Hiramatsu, Makoto Sekine and Masaru Hori

    2014 MRS Fall Meeting & Exhibit 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  60. Controlled synthesis and electrocatalytic characteristics of Pt nanoparticles-supported nanographene synthesized by in-liquid plasma International conference

    Hiroki Kondo, Tomoki Amano, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Mineo Hiramatsu

    67th Annual Gaseous Electronics Conference 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  61. Growth of graphene-based films using aftergrow of inductively coupled plasma International conference

    Mineo Hiramatsu, Masakazu Tomatsu, Hiroki Kondo, Masaru Hori

    67th Annual Gaseous Electronics Conference 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  62. Recent Development Plasma Nano-processes and Expectations for Radiation Light Experiments

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  63. プラズマCVDによって形成したカーボンナノウォールを用いた燃料電池の作製 International conference

    大慶 亮佑,岩本 翔太,太田 貴之,伊藤 昌文,平松 美根男,近藤 博基,堀 勝

    第75回秋季応用物理学会学術講演会  

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  64. Anisotropic etching and structural modification of carbon nanowalls by oxygen-related radicals International conference

    HIROKI KONDO, Hironao Shimoeda, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

    14th International Conference on Plasma Surface Engineering 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  65. Diagnostic studies for synthesis of Al doped ZnO film by magnetron sputtering International conference

    Jun Suck Lee, JayBum Kim, Su B. Jin, B.B. Sahu, Jeon G. Han, H. Kondo, M. Hori

    14th International Conference on Plasma Surface Engineering 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  66. Surface modification of carbon nanowalls for their nano-bio applications International conference

    Masaru Hori, HIROKI KONDO, Mineo Hiramatsu

    14th International Conference on Plasma Surface Engineering 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  67. Controlled Synthesis of Carbon Nanomaterials Employing Plasma-Enhanced Chemical Vapor Deposition for Future Green Energy Applications International conference

    Hiroki Kondo, Mineo Hiramatsu, Masaru Hori

    IUMRS-ICA 2014  

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  68. Dawning of Plasma Life Sciences ~ Diagnostics and Control of Reactive Species in Plasma Bio Processing ~ International conference

    Masaru Hori, Masahiro Tanaka, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Fumitaka Kikkawa, Kae Nakamura, Hiroaki Kajiyama, Masaaki Mizuno, Hiroyuki Ohta, Masafumi Ito and Hiroyuki Kano

    The 4th International Symposium for Plasma Biosciences (ISPB 2014) 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  69. Interactions between Plasma and Biological Material: Analysis by Electron spin resonance (ESR) technique International conference

    Hiromasa Tanaka, Keigo Takeda, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiroki Kondo, Makoto Sekine, Masaru Hori

    Plasma Processing Science, Gordon Research Conference 

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    Event date: 2014.7 - 2014.8

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  70. 高密度窒素ラジカル源を用いたRF-MBE法による(111)Si基板上GaNナノワイヤ高速成長

    堤裕理, 水谷駿介, 木津良祐, 近藤博基, 堀勝, 本田善央, 天野浩

    日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 2014春季講演会 第6回 窒化物半導体結晶成長講演会 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名城大学天白キャンパス   Country:Japan  

  71. Temporal Changes in H and N Atom Densities in Plasmas Caused by Reactor Surface Modifications International conference

    Toshiya Suzuki, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    The XXII Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  72. Plasma-Biological Material Interactions Studied by Employing Electron Spin Resonance (ESR) Technique International conference

    Kenji Ishikawa, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiromasa Tanaka, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    The XXII Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  73. Synthesis and electrocatalytic properties of Pt nanoparticles-supported nanographene synthesized employing in-liquid plasma International conference

    Hiroki Kondo, Tomoaki Amano, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Masafumi Ito, and Mineo Hiramatsu

    International Conference on Microelectronics and Plasma Technology 2014 (ICMAP 2014) 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  74. Nano-Bio applications of carbon-nano materials synthesized and modified by plasma International conference

    Hiroki Kondo, Mineo Hiramatsu, and Masaru Hori

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  75. High Density Radical Source International conference

    Y. Kiheda, H. Kano, H. Kondo, M. Hori, H. Amano, M. Hiramatsu

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  76. Chemical analysis of plasma-activated-medium for understanding mechanism of its antitumor effect International conference

    Naoyuki Kurake, Hiromasa Tanaka, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Fumiaki Kikkawa, Takashi Kondo, Masaaki Mizuno, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  77. Diagnostics of Non-equilibrium Atmospheric Pressure Plasma for Agricultural Applications International conference

    Takumi Kumakura, Keigo Takeda, Kenji Ishikawa, Hiromasa Tanaka, Hiroki Kondo, Hiroyuki Kano, Yoshihiro Nakai, Makoto Sekine, Masaru Hori

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  78. Modifications of Photoresists Surface on Photon Irradiations in HBr Plasmas International conference

    Yan Zhang, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  79. Study on Reaction Mechanism of Plasma-Enhanced Atomic Layer Deposition of SiO2 Films by In-Situ Fourier Transform Infrared Spectroscopy International conference

    14th International Conference on Atomic Layer Deposition (ALD 2014) 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  80. In situ analysis of the surface reactions in PE-ALD SiO2 films for advanced litho applications International conference

    14th International Conference on Atomic Layer Deposition (ALD 2014) 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  81. Charactaristics of AC excited Non-equilibrium Atomospheric Pressure Helium Plasma Jet for Medical Application International conference

    K. Takeda, T. Kumakura, K. Ishikawa, H. Tanaka, H. Kondo, H. Kano, Y. Nakai, M. Sekine, M. Hori

    5th International Conference on Plasma Medicine 

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    Event date: 2014.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  82. Electron Spin Resonance Study of Plasma-Activated-Medium International conference

    K. Ishikawa, N. Kurake, H. Tanaka, T. Kondo, K. Nakamura, H. Kajiyama, F. Kikkawa, M. Mizuno, K. Takeda, H. Kondo, M. Sekine, and M. Hori

    The 5th International Conference on Plasma Medicine (ICPM5) 

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    Event date: 2014.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  83. Electron Spin Resonance Study of Plasma-Biological Surface Interactions under Atmospheric Pressure Plasmas International conference

    K. Ishikawa, H. Hashizume, T. Ohta, M. Ito, H. Tanaka, K. Takeda, S. Tajima, H. Kondo, M. Sekine, M. Hori

    5th International Conference on Plasma Medicine 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  84. Diagnostics of SiH4/H2 Plasma and Surface Reaction in Microcrystalline Silicon Deposition International conference

    Kenji Ishikawa, Yusuke Abe, Atsushi Fukushima, Ya Lu, Sho Kawashima, Keita Miwa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    The International Conference on Metallurgical Coatings and Thin Films (ICMCTF) 

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    Event date: 2014.4 - 2014.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  85. Advanced plasma-nano processes for controls of crystallographic and electrical properties of carbon nanomaterials International conference

    Hiroki Kondo

    The International Symposium on Plasma-Nano Materials and Processes 

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    Event date: 2014.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  86. Electron spin resonance study of radical generation during non-thermal plasma blood coagulation International conference

    Kenji Ishikawa, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiromasa Tanaka, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    The 17th Biennial Meeting for the Society for Free Radical Research International (SFRRI 2014) 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  87. カーボンナノウォールの結晶構造に対するラジカル酸化効果(Ⅲ)

    近藤博基,下枝弘尚,石川健治,平松美根男,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  88. 大気圧プラズマ化学気相堆積法による超撥水薄膜の形成

    孫昿達,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  89. CH4/H2プラズマによるGaNの高温エッチング

    加古隆,劉沢セイ,石川健治,小田修,竹田圭吾,近藤博基,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  90. CHxFyプラズマにおける活性種生成過程とエッチング機構の解明(IV)

    近藤祐介,宮脇雄大,竹田圭吾,近藤博基,田嶋聡美,石川健治,林俊雄,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  91. プロセス履歴のチャンバー壁表面損失確率への影響とH2/N2プラズマ中のラジカル密度の時間変化

    鈴木俊哉,福永裕介,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  92. プラズマ照射した食肉血液成分の電子スピン共鳴解析

    坂倉崚亮,石川健治,田中宏昌,橋爪博司,太田貴之,伊藤昌文,竹田圭吾,近藤博基,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  93. 大気圧プラズマ照射培養液の電子スピン共鳴(ESR)による解析

    倉家尚之, 田中宏昌, 石川健治, 中村香江, 梶山広明, 吉川史隆, 近藤隆, 水野正明, 竹田圭吾, 近藤博基, 関根誠, 堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  94. プラズマプロセス中のポリメタクリル酸メチル(PMMA)表面の実時間・その場電子スピン共鳴法による反応解析

    宮脇雄大,王浩然,石川健治,近藤祐介,竹田圭吾,近藤博基,堀邊英夫,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  95. AC 励起大気圧非平衡 Ar プラズマ生成における 大気ガス巻込みの影響

    梁 思潔, 竹田 圭吾, 近藤 博基, 加納 浩之, 石川 健治 , 関根 誠, 堀 勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  96. AC励起アルコール液中プラズマにおけるナノグラフェン合成機構の解析

    安藤 睦,小島 和晃,竹田 圭吾,近藤 博基,石川 健治,関根 誠,太田 貴之,伊藤 昌文,平松 美根男,加納 浩之,堀 勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  97. Mechanism of Surface Roughness of ArF Photoresist During HBr PlasmaEtching Processes (2)

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  98. プラズマ光と表面の相互作用の解明

    張 彦, 石川 健治, 関根 誠, 深沢 正永, 長畑 和典, 冨谷 茂隆, 辰巳 哲也, 竹田 圭吾, 近藤 博基, 堀 勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  99. 高温における窒化ガリウム(GaN)のエッチング機構(4)

    劉沢セイ,加古隆,石川健治,小田 修,竹田圭吾,近藤博基,関根 誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  100. 医療・バイオ用AC励起大気圧非平衡プラズマジェットの気相診断

    熊倉匠, 竹田圭吾, 石川健治, 田中宏昌, 近藤博基, 加納浩之, 中井義浩, 関根誠, 堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  101. 液中プラズマで合成したナノグラフェンを用いた燃料電池用電極の安定性

    天野智貴,近藤博基,竹田圭吾,石川健治,太田貴之,伊藤昌文,平松美根男,加納浩之,関根誠,堀勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  102. 非接触基板温度計測システムを用いたプラズマプロセス中の基板温度および熱流速計測

    堤 隆嘉, 竹田 圭吾,石川 健治,近藤 博基,太田 貴之,伊藤 昌文,関根 誠,堀 勝

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  103. Measurement of Heat Fluxes of Si Substrate from Plasma by Using Frequency Low CoherenceInterferometer, 03pP29 International conference

    T. Tsutsu, K. Ishikawa, K. Takeda, T. Ohta, M. Ito, H. Kondo, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  104. Control of Edge and Surface Oxidation of Carbon Nanowalls by Argon Ion Irradiation, 03pD08O International conference

    H. Shimoeda, H. Kondo, K. Takeda, K. Ishikawa, M. Hiramatsu, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  105. GaN etching at high temperature employing N2 added Cl2 Plasma, 06aP04 International conference

    Z. Liu, T. Kako, K. Ishikawa, O. Oda, K. Takeda, H. Kondo, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  106. Effect of Ambient Air Engulfment on Generation of Activated Species in 60 Hz Non-Equilibrium Atmospheric Pressure Ar Plasma Jet (Poster), 03pP15 International conference

    S. Liang, T. Tsutsumi, A. Ando, K. Sun, K. Takeda, H. Kondo, K. Ishikawa, H. Kano, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  107. Effects of Low RF Bias Power on Optoelectrical Properties of Amorphous Carbon Films Grown byPlasma-Enhanced Chemical Vapor Deposition, 05pP71 International conference

    M. Nakamura, L. Jia, D. Xu, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  108. Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma, 06aP03 International conference

    Y. Kondo, Y. Miyawaki, K. Takeda, S. Tajima, H. Kondo, K. Ishikawa, T. Hayashi, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  109. Effects of residence time on electronic and electricalthe optical properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition, 05pP72 International conference

    L. Jia, D. Xu, M. Nakamura,K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  110. Electro catalytic properties of Pt-supported nanographene synthesis using in-liquid plasma, 05aB06O International conference

    T. Amano, K. Takeda, H. Kondo, K. Ishikawa, T. Ohta, M. Ito, H. Kano, M. Hiramatsu, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  111. Study on a novel radical-enhanced metalorganic chemical vapor deposition (REMOCVD) for GaN epitaxial growth, 03pC12O International conference

    Y. Lu, K. Ishikawa, H. Kondo, O. Oda, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  112. Fabrication of graphene films on Ni layer by microwave plasma-enhanced CVD, 03pP38 International conference

    Y. Kashima, M. Hiramatsu, H. Kondo, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  113. Nucleation control of carbon nanowalls using plasma-enhanced CVD with re-duced ion bombardment, 03pP42 International conference

    R. Tsukada, M. Hiramatsu, H. Kondo, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  114. Biosensing properties of carbon nanowalls grown using plasma enhanced CVD, 03pP51LN International conference

    M. Tomatsu, R. Tsukada, M. Nagashima, M. Hiramastu, H. Kondo, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  115. Emission charateristics of metallic elements in solution using non-equilibrium atmospheric pressure microplasma, 04pP07 International conference

    J. Kularatne, T. Ohta, J. Jolibois, M. Ito, H. Takemura, H. Kano, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  116. Synthesis of nanographene/Pt composite using alcohol in-liquid plasma, 04pP72LN International conference

    K. Yoshida, M. Ito, M. Hiramatsu, T. Saida, H. Kano, H. Kondo, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  117. Silicon thin film solar cells fabricated by H radical injection plasma, 05pP49 International conference

    K. Miwa, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  118. Observation of Dangling Bonds in Silicon Nitride Films during Exposure of F Atoms At Down-Flow of CF4 Plsmas Using Real-time / in-situ Electron Spin Resonance, 06aB02O International conference

    Y. Miyawaki, K. Ishikawa, Y. Kondo, K. Takeda, S. Tajima, H. Kondo, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  119. A high temperature etching of GaN employing CH4/H2 gases, 06aP02 International conference

    T. Kako, Z. Liu, K. Ishikawa, K. Takeda, H. Kondo, O. Oda, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  120. Effect of Ar flow rate on the synthesis of nanographene produced from in-liquid plasma, 06aP12 International conference

    J. Jolibois, J. Kularatne, H. Kondo, M. Ito, H. Kano, K. Ishikawa, M. Hiramatsu, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  121. Spectroscopic analysis of gas-liquid plasma for nanographene synthesis, 06aD03O International conference

    A. Ando, T. Takeda, H. Kondo, K. Ishikawa, M. Sekine T. Ohta, M. Ito, M. Hiramatsu, H. Kano, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  122. Effect of Gas Flow Rate on Crystalline Structures of Amorphous Carbon Films Employing Radical-Injection Plasma-Enhanced Chemical Vapor Deposition, 05pP34 International conference

    D. Xu, L. Jia, M. Nakamura, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  123. Behaviors of activated species in SiH4/H2 plasma for µc-Si:H thin film deposition International conference

    K. Takeda, Y. Abe, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  124. Plasma Induced Surface Roughness of Polymeric Materials International conference

    K. Ishikawa, T. Takeuchi, Y. Zhang, Y. Setsuhara, K. Takeda, H. Kondo, M. Sekine, M. Hori

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  125. Chemical analyses of edible meat irradiated atmospherics-pressure-plasmas, 5A-PM-01 International conference

    K. Ishikawa, H. Hashizume, T. Ohta, M. Ito, H. Tanaka, K. Takeda, S. Tajima, H. Kondo, M. Sekine, and M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  126. Rapid non-contact measurements of heat fluxes to substrate in nitorogen plasmas, 5B-PM-02 International conference

    T. Tsutsumi, K. Ishikawa, K. Takeda, T. Ohta, M. Ito, H. Kondo, M. Sekine, and M. Hori

    8th International Conference on Reactive Plasmas 31st Symposium on Plasma Processing,Fukuoka Convention Center 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  127. Electron spin resonance analyses of plasma-biological material interactions in atmospheric pressure plasmas, 3B-WS-07 International conference

    K. Ishikawa, H. Hashizume, T. Ohta, M. Ito, H. Tanaka, K. Takeda, S. Tajima, H. Kondo, M. Sekine, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. Effect of HBr plasma cure for reduction of roughness formation on ArF photoresist surface during plasma etching process, 4B-PM-03 International conference

    M. Sekine, Y. ZhangTakeuchi, H. Nagano, K. Ishikawa, K. Takeda, H. Kondo, and M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  129. Large-scale synthesis of nanographene using in-liquid plasma and chemical reduction process, 6P-PM-S09-P11 International conference

    J. Jolibois, J. Kularatne, H. Kano, M. Ito, M. Hiramatsu, H. Kondo, K. Ishikawa, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  130. Fabrication of graphene films using microwave plasma-enhanced CVD in surface wave mode, 6P-AM-S08-P28 International conference

    Y. Kashima, M. Hiramatsu, H. Kondo, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  131. Nucleation control of carbon nanowalls for device application, 5P-PM-S08-P09 International conference

    R. Tsukada, M. Hiramatsu, H. Kondo, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  132. Carbon nanowalls: plasma synthesis and applications, 3C-WS-07 International conference

    M. Hiramatsu, H. Kondo, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. Effect of Power supply on metal emission intensity induced by non-equilibium atmospheric pressure plasma, 6P-PM-S09-P12 International conference

    J. Kularatne, J. Jolibois, . Ohta, M. Ito, H. Kano, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  134. Electron spin resonance analysis of plasma-biological material interactions in atmospheric pressure plasma, 3B-WS-07 International conference

    K. Ishikawa, H. Hashizume, T. Ohta, M. Ito, H. Tanaka, K. Takeda, S. Tajima, H. Kondo, M. Sekine, M. Hori

    International workshop on control of fluctuation of plasma processes -Joint International Workshop between "Frontier science of interactions between plasmas and nano-interfaces" and "Plasma medical innovation" 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  135. Recovery of Plasma-induced Damage in GaN by In situ Radical Exposure , 6P-AM-S06-P18 International conference

    M. Sekine, Z. Liu, S. Chen, Y. Lu, R. Kometani, K. Ishikawa, H. Kano, K. Takeda, H. Kondo, and M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  136. Effect of spiral microwave antenna configuration on the production of nano-crystalline film by chemical sputtering in ECR plasma, 4P-PM-SPD-P05 International conference

    H. Kondo, L. Jia, D. Xu, M. Nakamura, K. Ishikawa, M. Sekine, M. Hori

    8th International Conference on Reactive Plasmas 

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    Event date: 2014.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  137. Plasma nano-interface with organic materials for surface-roughness formation International conference

    M. Sekine, Y. Zhang, K. Ishikawa, K. Takeda, H. Kondo, M. Hori

    The 9th EU-Japan Joint Symposium on Plasma Processing 

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Slovenia  

  138. Carbon Nanowalls: Growth Control and their Clean Applications International conference

    M. Hiramatsu, H. Kondo, M. Hori

    8th Asia-Pacfic International Symposium on the Basics and Applications of Plasma Technology 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  139. Carbon nanowalls: synthesis and application International conference

    M. Hiramatsu, H. Kondo, M. Hori

    The 1st International Conference on Surface Engineering (ICSE2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  140. Advanced Surface Engineering on Material Processing Employing Ultrahigh Density Atmospheric Pressure Plasma International conference

    Masaru Hori, K. Takeda, H. Kondo, K. Ishikawa, M.Sekine

    The 1st International Conference on Surface Engineering (ICSE2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  141. Rapid precise measurements of film-covered-substrate temperatures during plasma processes International conference

    M. Ito, T. Tsutsumi, T. Ohta, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, and M. Hori

    The 1st International Conference on Surface Engineering (ICSE2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  142. カーボンナノウォールの核発生制御に関する研究

    塚田僚介、平松美根男、近藤博基、堀勝

    応用物理学会SC東海地区学術講演会 2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  143. Non-contact measurements of substrate-temperature by frequency-domain low coherence interferometry International conference

    T. Tsutsumi, T. Ohta, K. Ishikawa, K Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

    AVS 60th International Symposium & Exhibition 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  144. PlasmaInduced Surface Roughness of ArF Photoresist Examined by Plasma-Beam Processes International conference

    T. Takeuchi, Y. Zhang, K. Ishikawa, M. Sekine, Y. Setsuhara, K. Takeda, H. Kondo, M. Hori

    AVS 60th International Symposium & Exhibition 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  145. Etching Characterristics of AlGaN and GaN in Inductively Coupled Cl2 Prasma International conference

    D. Cao, Y. Lu, R. Kometani, J. Park, K. Ishikawa, K Takeda, H. Kondo, M. Sekine, M. Hori

    AVS 60th International Symposium & Exhibition 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  146. High Temperature Etching of GaN Preserving Smooth and Stoichiometric GaN Surface International conference

    R. Kometani, K. Ishikawa, K Takeda, H. Kondo, M. Sekine, M. Hori

    AVS 60th International Symposium & Exhibition 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  147. Reaction Mechanism at the Sidewall of Through Si via (TSV) Etching by SF6/O2/SiF4 Plasma International conference

    I. Sakai, S. Amasaki, T. Takeuchi, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine N. Sakurai, H. Hayashi, T. Ohiwa, M. Hori

    AVS 60th International Symposium & Exhibition 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  148. Reduction of Mechanism of Surface Roughness on ArF-Photoresist Using C5HF7 Gas Plasma International conference

    Y. Miyawaki, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, A. Ito, H. Matsumoto, M. Hori

    66th Annual Gaseous Electronic Conference (GEC2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  149. Etching Characteristics of Gallium Nitride based compound semiconductors with Inductively Coupled Cl2 Plasma

    Jia-dong Cao, Yi Lu, Jong-yun Park, Ze-cheng Liu, Takashi Kako,Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  150. CH4 /H2 plasma etching on gallium nitride at high temperature

    Takashi Kako, Ze-cheng Liu, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine and Masaru Hori

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  151. Electrical properties of microcrystalline silicon thin films deposited by employing hydrogen radical-injection plasma-enhanced CVD method

    Keita Miwa, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  152. カーボンナノウォールに対する酸素原子及びアルゴンイオンの同時照射効果

    下枝弘尚,近藤博基,石川健治,平松美根男,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  153. Real-time / In-situ Electron Spin Resonance Analysis of Chemical Reactions on Silicon-Nitride with CF4 Gas Plasma

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  154. CHxFyプラズマにおける活性種生成過程とエッチング機構の解明(III)

    近藤祐介,宮脇雄大,竹田圭吾,近藤博基,石川健治,林俊雄,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  155. An Inhibition Mechanism for Surface Roughening of Photoresist During Plasma Etching Process with Plasma Cure

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  156. ラジカル注入型プラズマ励起化学気相堆積法で成長したアモルファスカーボン膜の結晶構造及びラジカル密度に対するガス流量効果

    徐達,賈凌雲,中村将之,近藤博基,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  157. プラズマ励起化学気相堆積法で成長したアモルファスカーボン膜の膜構造に対する基板バイアス印加効果

    中村将之,賈凌雲,徐達,近藤博基,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  158. Effect of boron doping on crystalline structures and electrical properties of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  159. 大気圧プラズマを用いたミスト化学気相堆積法によるシリコン酸化膜の低温形成

    孫昿達,竹田圭吾,伊藤仁,近藤博基,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  160. プラズマ-表面相互作用の実時間その場電子スピン共鳴分光研究

    石川健治,鷲見直也,河野昭彦,堀邊英夫,竹田圭吾,近藤博基,関根 誠,堀  勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  161. プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(5)

    王浩然,石川健治,堀邉英夫,竹田圭吾,近藤博基,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  162. プラズマによるHとNラジカルの表面損失確率の変化

    鈴木俊哉,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  163. カーボンナノウォールの表面化学修飾とナノバイオ応用

    近藤博基,渡邊均,石川健治,関根誠,堀勝,平松美根男

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  164. 液中プラズマで合成したナノグラフェンを用いた燃料電池用白金触媒電極の特性評価

    天野智貴,加納浩之,竹田圭吾,近藤博基,太田貴之,伊藤昌文,平松美根男,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  165. ナノグラフェン合成中の液中プラズマの分光診断

    安藤睦,竹田圭吾,近藤博基,石川健治,関根誠,太田貴之,伊藤昌文,平松美根男,加納浩之,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  166. AC励起非平衡大気圧プラズマの放電機構の解明に向けた時空間計測

    梁思潔,孫昿達,竹田圭吾,近藤博基,加納浩之,石川健治,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  167. 塩素ガスプラズマによるGaNエッチングにおける窒素ガス添加の効果

    劉沢セイ,朴鐘胤,曹佳棟,加古隆,石川健治,小田修,竹田圭吾,近藤博基,関根誠,堀勝

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学 京田辺キャンパス   Country:Japan  

  168. プラズマ-表面相互作用の実時間その場電子スピン共鳴分光研究

    石川健治(記念講演)、鷲見直也、河野昭彦、堀邊英夫、竹田圭吾、近藤博基、関根 誠、堀 勝

    プラズマエレクトロニクス賞受賞記念講演、平成25年秋季第74回応用物理学会学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:同志社大学京田辺キャンパス   Country:Japan  

  169. Gradual transition of chemical structures at initial growth stage of carbon nanowalls International conference

    H. Kondo, K. Yasuda, K. Ishikawa, M. Sekine, M. Hiramatsu, and M. Hori

    The European Materials Conference European Materials Research Society Fall Meeting Scientific/Technical Symposia & Exhibition 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  170. Nucleation control of self-organized vertical nano-graphenes using inductively coupled plasma enhanced chemical vapor deposition International conference

    M. Hiramatsu, Y. Nihashi, H. Kondo, M. Hori

    The European Materials Conference European Materials Research Society Fall Meeting Scientific/Technical Symposia & Exhibition 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  171. 先進プラズマ技術による産業イノベーション

    堀勝、関根誠、近藤博基、竹田圭吾

    テクノ・フェア名大2013 -工学が挑む新時代の科学・技術- 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学豊田講堂・シンポジオンホール   Country:Japan  

  172. 非平衡大気圧プラズマによる先端グリーン・ライフイノベーション

    豊田 浩孝、石川 健治、堀 勝、関根 誠、近藤 博基、竹田 圭吾

    テクノ・フェア名大2013 -工学が挑む新時代の科学・技術- 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学豊田講堂・シンポジオンホール   Country:Japan  

  173. Analysis of Fluorocarbon Gas Plasma Surface Interactions Using Real-time/In-situ Electron Spin Resonance International conference

    Y. Miyawaki, H. Wang, Y. Kondo, K. Ishikawa, K. Takeda, S. Tajima, H. Kondo, M. Sekine, H. Horibe, M. Hori

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  174. Plasma Etching of Ga-based Compound Semiconductor International conference

    J. Park, J. Cao, Z. Liu, T. Kako, K. Ishikawa, Y. Setsuhara, K. Takeda, H. Kondo, M. Sekine, M. Hori

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  175. Control of Gas Phase Reaction in Etching Plasmas Employing Hydro-fluorocarbon Gases International conference

    Y. Kondo, Y. Miyawaki, K. Takeda, H. Kondo, K. Ishikawa, T. Hayashi, M. Sekine, M. Hori

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  176. Low-temperature Insulating Film Formation with Plasma Enhanced Mist Chemical Vapor Deposition International conference

    K. Sun, K. Takeda, H. Itoh, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  177. Effect of Hydrogen Peroxide on Carbon Materials Produced by Gas-liquid Plasma International conference

    J. Jolibois, J. Kularatne, H. Kano, M. Ito, H. Kondo, K. Ishikawa, M. Hori

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  178. Non-contact Temperature Monitoring of Substrates Using Optical Interferometry on Plasma Processing International conference

    T. Ohta, T. Takayoshi, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori, M. Ito

    Dry Process Symposium 2013 (DPS2013) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  179. In-situ ESR Measurements for Plasma Materials Interactions International conference

    Kenji ISHIKAWA, Hiromasa TANAKA, Hiroshi HASHIZUME, Takayuki OHTA, Masafumi ITO, Keigo TAKEDA, Hiroki KONDO, Makoto SEKINE and Masaru HORI

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  180. In-situ ESR measurements for Plasma Materials Interractions International conference

    Kenji Ishikawa, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, and M. Hori

    9th Asian-european International Conference On Plasma Surface Enginnering, Conference and Exhibition 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  181. Surface Analysis of GaN at Elevated Substrate Temperature International conference

    Kenji Ishikawa, Ryosuke Kometani, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    10th International Conference on Nitride Semiconductors (ICNS10) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  182. Recovery of Plasma-Damaged GaN by in situ Radical Exposure International conference

    Makoto Sekine, Zecheng Liu, Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Masaru Hori

    10th International Conference on Nitride Semiconductors (ICNS10) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  183. Hydrogen radical-injection plasma fabricated microcrystalline silicon thin film for solar cells International conference

    Masaru Hori, Yusuke Abe, Atsushi Fukushima, Ya Lu, Sho Kawashima, Keita Miwa, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine

    21th International Symposium on Plasma Chemistry (ISPC) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Australia  

  184. Detection of metal elements in soil using atmospheric pressure plasma International conference

    J. Kularatne, J. Jolibois, H. Kano, M. Ito, T. Ohta, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    The 12th Asia Pacific Physics Conference of AAPPS (AAPC12) 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  185. Effect of thin films on wafer temperature during plasma processes investigated by non-contact temperature measurement technique International conference

    T. Tsutsumi, K Takeda, K. Ishikawa, T. Ohta, M. Ito, H. Kondo, M. Sekine, M.Hori.

    XXXI International Conference on Phenomena in Ionized Gases 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Spain  

  186. Cell-culturing scaffold application of carbon nanowall(CNW) International conference

    M. Hori, H. Watanabe, H. Kondo, Y. Okamoto, M. Hiramatsu, M. Sekine, Y. Baba

    XXXI International Conference on Phenomena in Ionized Gases 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Spain  

  187. Crystallographic and chemical modification of carbon nanowalls by radical oxidation International conference

    H. Shimoeda, H. Kondo, K. Ishikawa, M. Hiramatsu, M. Sekine, M. Hori

    The 12th Asia Pacific Physics Conference of AAPPS (AAPC12) 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  188. Effect of Hexane on the synthesis of nanographene using liquid plasma International conference

    J. Jolibois, J. Kularatne, H. Kano, M. Ito, H. Kondo, K. Ishikawa, M. Hori

    The 12th Asia Pacific Physics Conference of AAPPS (AAPC12) 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  189. ミドリカビ胞子からの実時間その場ESR信号観察

    石川 健治,水野 寛子,田中 宏昌,橋爪 博司,太田 貴之, 伊藤 昌文,竹田 圭吾,近藤 博基,関根 誠,堀 勝

    第66回日本酸化ストレス学会学術集会 

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    Event date: 2013.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:WINCあいち,名古屋   Country:Japan  

  190. 卵巣癌細胞におけるプラズマの抗腫瘍効果とROSの関与

    中村 香江, 梶山 広明, 内海史, 田中 宏昌, 水野 正明, 石川 健治, 近藤 博基, 加納 浩之, 堀 勝, 吉川 史隆

    第66回日本酸化ストレス学会学術集会 

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    Event date: 2013.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:WINCあいち,名古屋   Country:Japan  

  191. Reduction of surface roughness on ArF-photoresist by C5HF7 gas plasma International conference

    Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, Azumi Ito, Hirokazu Matsumoto, and Masaru Hori

    17th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 4th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  192. Chemical modification and nano-bio applications of carbon nanowalls International conference

    Hiroki Kondo, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    17th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 4th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  193. Effect of boron doping on amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition International conference

    Lingyun Jia, Jun Kuki, Leyong Yu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    17th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 4th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  194. 窒化ガリウム(GaN)向けたサファイア基板の周波数領域型低コヒーレンス干渉計による温度計測(Ⅱ)

    堤隆嘉、竹田圭吾、石川健治、近藤博基、太田貴之、伊藤昌文、関根誠、堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:神奈川工科大学   Country:Japan  

  195. プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(4)

    石川健治,堀邉英夫,竹田圭吾,近藤博基,関根誠,堀勝,王浩然

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  196. CHxFyプラズマにおける活性種生成過程とエッチング機構の解明(II)

    近藤祐介,宮脇雄大,竹田圭吾,近藤博基,石川健治,林俊雄,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  197. AlGaNのプラズマエッチング機構に関する研究

    曹佳棟,米谷亮佑,盧翌,朴鐘胤,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  198. H2/N2プラズマ中のラジカル密度へ前のプロセスが与える影響とその制御

    鈴木俊哉,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  199. プラズマプロセスによるArFフォトレジスト表面凹凸の解析

    竹内拓也,石川健治,節原裕一,竹田圭吾,近藤博基,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  200. Identification of ESR signals arisen from Penicillium digitatum spores-3

    37.H Mizuno, K Ishikawa, H Tanaka, H Hashizume, T Ohta, M Ito, K Takeda, H Kondo, M Sekine, and M Hori

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  201. カーボンナノウォールの結晶構造に対するラジカル酸化効果(Ⅱ)

    下枝弘尚,近藤博基,石川健治,平松美根男,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  202. 窒素プラズマを用いた化学修飾によるカーボンナノウォールの構造および電気的特性の制御

    趙亨峻,近藤博基,石川健治,関根誠,平松美根男,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  203. 混合ガスプラズマ培養液によるグリオーマ脳腫瘍培養細胞に対する抗腫瘍効果の解析 International conference

    権田亮,田中宏昌,竹田圭吾,田嶋聡美,近藤博樹,石川健治,関根誠,加納浩之,水野正明,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  204. 超臨界流体を用いた2 段階担持プロセスによるカーボンナノウォールへのPtナノ微粒子の超高密度担持および粒径分布制御

    堀部剛良,近藤博基,加納浩之,石川健治,関根誠,平松美根男,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  205. In situ Surface analysis of GaAs irradiated by Cl plasma beams

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  206. Study on mechanism of gallium nitride growth employing a plasma-enhanced metal-organic chemical vapor deposition

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  207. プリンタブルエレクトロニクスに向けたプラズマ励起ミスト化学気相堆積技術に関する研究

    孫昿達,竹田圭吾,伊藤仁,近藤博基,石川健治,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  208. 水素ラジカル注入型プラズマCVDによる微結晶シリコン膜の特性解析

    阿部祐介,三輪佳大,福島敦史,陸雅,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  209. ガスデザインに基づいた高選択絶縁膜エッチングの検討

    宮脇雄大、浅野高平、近藤祐介、竹田圭吾、田嶋聡美、近藤博基、石川健治、林俊雄、関根誠、伊東安曇、松本裕一、堀勝

    第156回シリコンテクノロジー研究集会 

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    Event date: 2013.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京大学本郷キャンパス   Country:Japan  

  210. Influence of N2 inclusion to Ar AP plasma in atomization International conference

    J. S.Kularatne, H. Kano, M. Ito, T. Ohta, K. Takeda, H. Kondo, K. Ishikawa,M. Sekine, M. Hori

    The 6th International Conference on PLAsma Nanotechnology & Science (IC-PLANTS 2013) 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  211. Temperature measurement of carbon nanowall / silicon substrateusing super-continuum light source on low-coherence interferometry International conference

    T. Hiraoka, H. Kato, T. Tsutsumi, T. Ohta, M. Ito, K. Takeda, H. Kondo,M. Hori,

    The 6th International Conference on PLAsma Nanotechnology & Science (IC-PLANTS 2013) 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  212. Chlorine plasma etching of GaN at high temperature International conference

    R. Kometani, L.Michael, K. Ishikawa, K. Takeda, H. Kondo, H. Amano, M. Sekine, M.Hori,

    The 6th International Conference on PLAsma Nanotechnology & Science (IC-PLANTS 2013) 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  213. Effects of hydrogen contained in fluorocarbon gas molecules fordielectric film etching process International conference

    Y. Kondo, Y. Miyawaki, K. Takeda, K.Ishikawa, H. Kondo, T. Hayashi, M. Sekine, M. Hori,

    The 6th International Conference on PLAsma Nanotechnology & Science (IC-PLANTS 2013) 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  214. Plasma-mediated modulation of element distribution in skin and skin cancer International conference

    I. Yajima, M. Iida, K. Nakagawa, H. Kondo, M. Kumasaka, K. Takeda, M. Hori, H. Kano, M. Kato

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  215. Study on mechanism of ultrahigh speed synthesis of high crystallinity nanographene employing in-liquid plasma International conference

    H. Kondo, T. Hagino, K. Ishikawa, H. Kano, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  216. Nonequilibrium atmospheric pressure plasma selectively killed ovarian cancer cells and induced apoptosis International conference

    H. Tanaka, S. Iseki, K. Nakamura, M. Hayashi, H. Kondo, H. Kajiyama, H. Kano, F. Kikkawa, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  217. High temperature plasma etching of GaN International conference

    R. Kometani, S. Chen, M. Liu, K. Ishikawa, H. Kondo, K. Takeda, T. Egawa, H. Amano, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  218. Plasma-biological surface interaction investigated by electron spin resonance International conference

    H. Mizuno, K. Ishikawa, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  219. Electron spin resonance study of plasma-biological surface interaction for food hygiene International conference

    K. Ishikawa, H. Mizuno, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  220. Low-damage, high-accuracy plasma etching of Ga-compound semiconductors International conference

    J. Cao, R. Kometani, J. Park, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  221. Mechanism for degradation of porous SiOCH low-K films by O2 plasma International conference

    K. Asano, K. Ishikawa, M. Sekine, K. Takeda, H. Kondo, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  222. Gas-phase reaction model of Ar-diluted CHxFy plasmas International conference

    Y. Kondo, Y. Miyawaki, K. Takeda, H. Kondo, K. Ishikawa, T. Hayashi, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  223. Subsequent temporal change of gaseous H and N radical density in H2/N2 plasma after air exposure and its control International conference

    T. Suzuki, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  224. Real-time variation of sputtering yield of Ar ion for ArF photoresist during Ar plasma exposure International conference

    T. Takeuchi, C. Corbella, S. Grosse-Kreul, A. Keudell, K. Ishikawa, H. Kondo, K. Takeda, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  225. Sequential exposure of N and H atoms for recovery of plasma-damaged GaN International conference

    Z. Liu, S. Chen, Y. Lu, R. Kometani, K. Ishikawa, H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  226. Investigation of Si etch reaction with F and O radicals using SF6/O2 plasma International conference

    M. Sekine, S. Amasaki, T. Takeuchi, K. Ishikawa, K. Takeda, H. Kondo, M.Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  227. Effect of boron doping on crystalline structures and electrical properties of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition International conference

    J. Kuki, L. Yu, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  228. Study on precursor adsorption and reaction within SiO2 growth cycle of low temperature plasma-enhanced atomic layer deposition using in-situ ATR-FTIR International conference

    Y. Lu, A. Kobayashi, Y. Kim, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  229. Hydrogen radical injection plasma deposition of (110)-preferentially oriented microcrystalline silicon films International conference

    L. Ya, A. Fukushima, Y. Abe, Y. Kim, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  230. Relation between gaseous radicals and μc-Si film property in SiH4/H2 plasma CVD International conference

    A. Fukushima, Y. Lu, Y. Abe, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  231. Construction of atmospheric pressure mist chemical vapor deposition technology for the all-printed electronic technology International conference

    K. Sun, K. Takeda, S. Tajima, H. Kondo, K. Ishikawa, M. Sekine, M. Hori, H. Itoh

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  232. Superior properties of carbon nanowalls as cell scaffolds International conference

    Y. Okamoto, H. Watanabe, K. Kubo, H. Kondo, N. Kaji, M. Tokeshi, M. Hori,Y. Baba

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  233. Effect of Ar gas addition on photoconductive characteristics of amorphous carbon films synthesized by plasma-enhanced chemicalvapor deposition International conference

    L. Yu, J. Kuki, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  234. Crystallographic and electrical properties of vertically-grown graphene sheets by CH4/H2 plasma International conference

    H. Cho, H. Kondo, K. Ishikawa, M. Sekine, M. Hiramatsu, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  235. Effects of morphological changes induced by hydrogen peroxide treatment on electrical properties of carbon nanowalls International conference

    H. Shimoeda, H. Kondo, K. Takeda, K. Ishikawa, M. Hiramatsu, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  236. Formation and characteristics of Pt-Au nanoparticles supported on carbon nanowalls (CNWs) employing a supercritical fluid International conference

    T. Horibe, H. Kondo, H. Kano, K. Ishikawa, M. Sekine, M. Hiramatsu, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  237. Effects of carbon nanowall scaffold and their chemical termination on cell culturing International conference

    H. Watanabe, H. Kondo, Y. Okamoto, M. Sekine, M. Hiramatsu, Y. Baba, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  238. Cavity ring down measurements of SiH3-behavior in SiH4/H2 plasma International conference

    Y. Abe, A. Fukushima, Y. Kim, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  239. Absolute density of fluorine atom in capacitively coupled plasma employing hydro-fluorocarbon gases for highly selective SiO2 etching International conference

    T. Komuro, K. Takeda, K. Ishikawa, M. Sekine, H. Kondo, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  240. Measurement of carbon nanowalls / silicon substrate temperature by fourier-domain low-coherence interferometry International conference

    T. Hiraoka, T. Tsutsumi, H. Kato, K. Takeda, T. Ohta, H. Kondo, K. Ishikawa, M. Ito, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  241. Real time temperature measurements of film-covered-substrate employing fourier domain low coherence interferometer during plasma processes International conference

    T. Tsutsumi, T. Hiraoka, K. Takeda, K. Ishikawa, T. Ohta, M. Ito, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  242. The atmospheric pressure plasmas International conference

    H. Kano, K. Takeda, H. Kondo, S. Den, Y. Higashijima, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  243. High H radical density produced by 1-m-length atmospheric pressure microwave plasma system International conference

    H. Itoh, Y. Kubota, Y. Kashiwagi, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, H. Toyoda, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  244. Application of atmospheric pressure plasma in element analysis of agricultural products International conference

    J. Kularatne, H. Kano, M. Ito, T. Ohta, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  245. Radical Density Control in H2/N2 Plasma Based on In-situ Monitoring with Vacuum Ultra Violet Absorption Spectroscopy International conference

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  246. Effects of Hydroxyl Radicals on Crystallographic and Electrinic Structures of Carbon Nanowalls International conference

    H. Shimoeda, H. Kondo, K. Ishikawa, M. Hiramatsu, M.Sekine and M. Hori

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  247. Plasma-surface intertactions in plasma etching of future device fabrication International conference

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  248. Etching characteristics of AlGaN in inductively coupled Cl2 plasmas International conference

    J.-D. Cao, Y. Lu, R. Kometani, J. -Y. Park, K. Ishikawa, K. Takeda, H. Kondo, M, Sekine, and M. Hori

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    Event date: 2013.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  249. Real-time / in-situ electron spin resonance analysis of plasma surface interactions International conference

    H. Wang, K. Ishikawa, H. Horibe, K. Takeda, H. Kondo, M, Sekine, and M. Hori

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    Event date: 2013.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  250. Plasma-surface intertactions in plasma etching of future device fabrication International conference

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  251. プラズマ医療科学の創成とその展望

    堀 勝、井関 紗千子、田中 昌弘、石川 健治、近藤 博基、竹田 圭吾、関根 誠、中村 香江、林 萌美、梶山 広明、加納 浩之、吉川 史隆

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  252. プラズマ化学気相堆積法を用いたナノグラフェンの核発生によるカーボンナノウォールの選択成長

    塚田 僚介、平松 美根男、近藤 博基、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  253. ハイドロフルオロカーボンプラズマによるArFフォトレジストの低ラフネスエッチング機構

    浅野 高平、宮脇 雄大、石川 健治、関根 誠、伊東 安曇、松本 裕一、竹田 圭吾、近藤 博基、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  254. プラズマ励気ミスト化学気相成長法を用いた絶縁膜合成

    孫 昿達、竹田 圭吾、近藤 博基、田嶋 聡美、石川 健治、関根 誠、堀 勝、伊藤 仁

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  255. マイクロ波励起表面波プラズマCVD法を用いたカーボン膜の作製

    加島 洋平、平松 美根男、近藤 博基、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  256. プラズマCVDを用いて作製したカーボンナノウォールのバイオセンサ特性

    永島 三千弥、渡邊 均、平松 美根男、近藤 博基、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  257. プラズマ医療科学の創成とその展望

    堀勝 、井関紗千子、田中昌弘、石川健治、近藤博基、竹田圭吾、関根誠、中村香江、林萌美、梶山広明、加納浩之、吉川史隆

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:アクトシティ浜松・研修交流センターS会場   Country:Japan  

  258. H2/N2プラズマ中のラジカル密度へ前のプロセスが与える影響とその制御

    鈴木俊哉,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    第60回応用物理学会春季学術講演会 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  259. プラズマCVDを用いて作製したカーボンナノウォールのバイオセンサ特性

    永島三千弥、渡邊均、平松美根男、近藤博基、堀勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  260. マイクロ波励起表面波プラズマCVD法を用いたカーボン膜の作製

    加島洋平、平松美根男、近藤博基、堀勝

    第30回プラズマプロセシング研究会 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  261. プラズマ化学気相堆積法を用いたナノグラフェンの核発生によるカーボンナノウォールの選択成長

    塚田僚介、平松美根男、近藤博基、堀勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  262. ハイドロフルオロカーボンプラズマによるArFフォトレジストの低ラフネスエッチング機構

    浅野高平、宮脇雄大、石川健治、関根誠、伊東安曇、松本裕一、竹田圭吾、近藤博基、堀勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  263. 超臨界流体を用いた2段階担持法によるカーボンナノウォールへの超高密度Pt-Auナノ微粒子担持

    堀部剛良、近藤博基、加納浩之、石川健治、平松美根男、関根誠、堀勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  264. 電気二重層キャパシタに用いるカーボンナノウォール電極の電気化学評価

    吉田 圭祐、平松 美根男、近藤 博基、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  265. プラズマ励気ミスト化学気相成長法を用いた絶縁膜合成

    孫昿達、竹田圭吾、近藤博基、田嶋聡美、石川健治、関根誠、堀勝、伊藤仁

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  266. 塩素ガスプラズマによる窒素ガリウムの高温エッチング

    米谷亮祐、陳尚、曹佳棟、劉沢せい、石川健治、竹田圭吾、近藤博基、関根誠、天野浩、堀勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  267. 塩素ガスプラズマによる窒素ガリウムの高温エッチング

    米谷 亮祐、陳 尚、曹 佳棟、劉 沢铖、石川 健治、竹田 圭吾、近藤 博基、関根 誠、天野 浩、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  268. 超臨界流体を用いた2段階担持法によるカーボンナノウォールへの超高密度Pt-Auナノ微粒子担持

    堀部 剛良、近藤 博基、加納 浩之、石川 健治、平松 美根男、関根 誠、堀 勝

    第30回プラズマプロセシング研究会(SPP-30) 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:アクトシティ浜松・研修交流センター S会場   Country:Japan  

  269. Comprehensive study of atmospheric pressure plasma International conference

    M. Hori, K. Ishikawa, H. Kondo, K. Takeda, M. Tanaka, S. Makoto, T. Ohta, M. Ito,

    69th IUVSTA Workshop on Oxidation of Organic Materials by Excited Radicals Created in Non-equilibrium Gaseous Plasma  

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Slovenia  

  270. Electron Spin Resonance (ESR) observation of radicals on biological organism interacted with plasmas International conference

    Ishikawa K.

    Materials Research Society Symposium Proceedings 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1557/opl.2012.928

    Scopus

  271. Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films International conference

    Puurunen R.

    Sensors and Actuators, A: Physical 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1016/j.sna.2012.05.006

    Scopus

  272. Selective killing of ovarian cancer cells through induction of apoptosis by a nonequilibrium atmospheric pressure plasma International conference

    Tanaka H.

    Materials Research Society Symposium Proceedings 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1557/opl.2012.927

    Scopus

  273. Plasma-Biological Surface Interaction for Food Hygiene: Real-time in situ Electron Spin Resonance Measurements International conference

    K. Ishikawa, H. Mizuno, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Taked, H. Kondo, M. Sekine, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  274. High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma International conference

    Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  275. Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma International conference

    M. Fukasawa, H. Matsugai, T. Honda, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, K. Nagahata, F. Uesawa, M. Hori, T. Tatsumi

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  276. Plasma surface modification of carbon nanowalls for biosensor application International conference

    M. Nagashima, T. Maeda, M. Hiramatsu, H. Watanabe, H. Kondo, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  277. A High Temperature Plasma Etching of GaN and Its Reaction Mechanism International conference

    R. Kometani, S. Chen1, M. Liu, K. Ishikawa, H. Kondo, K. Takeda, T. Egawa, H. Amano, M. Sekine, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  278. Nucleation mechanism of self-organized vertical nano-graphenes grown using inductively coupled plasma enhanced chemical vapor deposition International conference

    R. Tsukada, Y. Nihashi, M. Hiramatsu, H. Kondo, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  279. A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism International conference

    K. Asano, Y. Miyawaki, K. Ishikawa, M. Sekine, K. Takeda, A. Ito, H. Matsumoto, H. Kondo, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  280. Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP International conference

    T. Komuro, K. Takeda, K. Ishikawa, M. Sekine, Y. Ohya, H. Kondo, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  281. An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN International conference

    H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, M. Hori

    34th International Symposium on Dry Process (DPS2012) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  282. Mechanism of Generating Ions and Radicals in Fluorocarbon Plasma Investigated by Reaction Model Analysis International conference

    Y. Kondo, Y. Miyawaki, K. Takeda, H. Kondo, K. Ishikawa, T. Hayashi, M. Sekine, M. Hori

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  283. Control of Surface Properties on Plasma-Etched Gallium Nitride (GaN) International conference

    R. Kometani, S. Chen, J. Park, J. Cao, Y. Lu, K.Ishikawa, K. Takeda, H. Kondo, H. Amano, M. Sekine, M. Hori

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  284. Crystalline and Electrical Properties of Vertically-Laminated Carbon Nanowalls formed by Two-Step Growth Method International conference

    H. Kondo, T. Kanda, M. Hiramatsu K. Ishikawa, M. Sekine, M. Hori

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  285. Investigation of Plasma-Surface Interactions Between Hydrogen Radical and Chemically Amplified Photoresist International conference

    A.Malinowski, M. Sekine, M. Hori, K. Ishikawa, H. Kondo, T. Takeuchi, T. Suzuki, A. Jakubowski, L. Lukasiak, D.Tomaszewski

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  286. Interface Trap Generation by VUV/UV Radiation from Fluorocarbon Plasma International conference

    M. Fukasawa,Y.Miyawaki, Y. Kondo, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, H. Matsugai, T. Honda, M. Minami, F. Uesawa, M. Hori, T. Tatsumi

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  287. Subsequent Temporal Change of Gaseous H and N Radical Density in Plasma after Different Processes International conference

    T. Suzuki, A. Malinowski, K. Takeda, H. Kondo, K. Ishikawa, Y. Setsuhara, M. Shiratani, M. Sekine, M. Hori,

    59th AVS International Symposium and Exhibition 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  288. AC励起大気圧プラズマを用いた下水モニタリング装置の開発 International conference

    J.S KULARATNE、加納 浩之、伊藤 昌文、太田 貴之、竹田 圭吾、石川 健治、近藤 博基、関根 誠、堀 勝

    第5回プラズマ技術産業応用センター(PLACIA)&プラズマが拓くものづくり研究会(PLAM)国際シンポジウム 

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    Event date: 2012.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:なごやサイエンスパーク、サイエンス交流プラザ大会議室   Country:Japan  

  289. Temperature measurement of substrate with a thin film using low-coherence interference International conference

    Takayoshi Tsutsumi, Takehiro Hiraoka, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, Masaru Hori

    65th Annual Gaseous Electronics Conference  

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  290. Fabrication of graphene-based films using remote plasma CVD International conference

    Mineo Hiramatsu, Ryosuke Tsukada, Yohei Kashima, Masateru Naito, Hiroki Kondo, Masaru Hori

    65th Annual Gaseous Electronics Conference  

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  291. Healing Process of Plasma-damaged Gallium Nitride (GaN) International conference

    Kenji Ishikawa(invited),Shang Chen, Keigo Takeda, Hiroki Kondo, Makoto Sekine Masaru Hori

    the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN),  

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Australia  

  292. Evaluation of Relationship between μC-Si Film Property and Flux Ratio of H Radicals to Film Precursors International conference

    A. Fukushima, Y. Abe, Y. Lu, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

    the 11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM (Symposium on Plasma Science for Materials)  

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  293. Effects of Hydroxyl Radical on Nanographene Surfaces in Carbon Nanowalls International conference

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

    the 11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM (Symposium on Plasma Science for Materials)  

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country: