Papers - OHNO, Yutaka
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Electroluminescence Distribution in AlGaN/GaN High Electron Mobility Transistors under High Bias Votlage Reviewed
"T. Nakao, Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, T. Mizutani"
2002
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Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy Reviewed
"Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, T. Mizutani"
2002
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A delta-sigma modulator using resonant tunneling diodes Reviewed
"Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"
2001
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Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in Thin AlGaAs Barrier Reviewed
"Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"
2001
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Observation of Resonant Tunneling through Single Self-Assembled InAs Quantum Dots using Electro-Photoluminescence Spectroscopy
Journal of Applied Physics Vol. 87 ( 9 ) page： 4332 2000
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Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate
Japanese Journal of Applied Physics Vol. 39 ( 1 ) page： 35 2000
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Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in Thin AlGaAs Barrier
2000
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Observation of Resonant Tunneling through Single Self-Assembled InAs Quantum Dots using Electro-Photoluminescence Spectroscopy Reviewed
"Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani"
2000
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Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate Reviewed
"Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi"
2000
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Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Japanese Journal of Applied Physics Vol. 38 ( 4 ) page： 2586 1999
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Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors(共著)
Japanese Journal of Applied Physics Vol. 38 ( 3 ) page： 1363 1999
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Obsevation of Resonant Tunneling through InAs Quantum Dots by Using Electro-Photoluminescence Spectroscopy
11th International Conference on Indium Phosphide and Related Materials 1999
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Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells(共著)
Solid State Electronics Vol. 43 page： 147 1999
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Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs(共著)
Japanese Journal of Applied Physics Vol. 38 ( 1B ) page： 546 1999
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Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors Reviewed
"Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi"
1999
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Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs Reviewed
"K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani"
1999
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Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells Reviewed
"T. Murata, Y. Ohno, S. Kishimoto, T. Mizutani"
1999
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Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors Reviewed
"H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki, T. Taniguchi"
1999
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Photoluminescence Study of Resonant Tunneling Transistor
1997 IEEE International Symposium on Compound Semiconductors Institute of Physics Publishing, Bristol and Philadelphia Vol. 97TH ( 8272 ) page： 613 1998
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Photolumineseence Intensity Enhancement Caused by Electron Beam Irradiation into AlGaAs/GaAs Quantum Wells
1998 International Symposium on Compaund Semiconductors 1998