Papers - OHNO, Yutaka
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Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Japanese Journal of Applied Physics Vol. 38 ( 4 ) page： 2586 1999
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Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells(共著)
Solid State Electronics Vol. 43 page： 147 1999
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Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs(共著)
Japanese Journal of Applied Physics Vol. 38 ( 1B ) page： 546 1999
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Obsevation of Resonant Tunneling through InAs Quantum Dots by Using Electro-Photoluminescence Spectroscopy
11th International Conference on Indium Phosphide and Related Materials 1999
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Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors(共著)
Japanese Journal of Applied Physics Vol. 38 ( 3 ) page： 1363 1999
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Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors Reviewed
"Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi"
1999
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Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs Reviewed
"K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani"
1999
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Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells Reviewed
"T. Murata, Y. Ohno, S. Kishimoto, T. Mizutani"
1999
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Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors Reviewed
"H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki, T. Taniguchi"
1999
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Photoluminescence Study of Resonant Tunneling Transistor
1997 IEEE International Symposium on Compound Semiconductors Institute of Physics Publishing, Bristol and Philadelphia Vol. 97TH ( 8272 ) page： 613 1998
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Photolumineseence Intensity Enhancement Caused by Electron Beam Irradiation into AlGaAs/GaAs Quantum Wells
1998 International Symposium on Compaund Semiconductors 1998
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Electroluminescence Measurement of n+-Self-Alighed Gate GaAs MESFETs
Japanese Journal of Applied Physics Vol. 37 page： 1343 1998
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Ultranarrow Luminescence Lines from Single InAs Quantum Dots Grown on a GaAs Substrate
1998 Microprocesses and Nanotechnology Conference 1998
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Microscopic PL Study of InAs Single Quantem Dots Groun on(100)GaAs (共著)
Second International Symposium on Formation, Physics and Deuce Application of Quantum Dots Structure, 1998 page： 184 1998
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Logic Gate for optical Input using Monostable-Bistable Transition of Serially Connected Resonant Tennelling Transistors
Electronics Letters Vol. 34 ( 3 ) page： 250 1998
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Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
1998 International Conference on Solid State Devices and Materials page： 348 1998
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Logic Gate for Optical Input Using Monostable-Bistable Transition of Serially Connected Resonant Tunnelling Transistors Reviewed
"Y. Ohno, S. Kishimoto, T. Mizutani, T. Akeyoshi"
1998
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Electroluminescence Measurement of n+ Self-Aligned Gate GaAs MESFETs Reviewed
"H. Niwa, Y. Ohno, S. Kishimoto, T. Mizutani, H. Yamazaki, T. Taniguchi"
1998
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Electroluminescence Measuromeut of n+Self-Aligned GaAs MESFETs
1997 International Conference on Solid State Devices and Materials 1997
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Photoluminescence Study of Resonant-Tunneling Transistor Reviewed
"Y. Ohno, S. Kishimoto, T. Mizutani, T. Akeyoshi"
1997