講演・口頭発表等 - 柚原 淳司
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Co-evaporated noble metal behavior on the Si(111) surface by using RBS,14th Int. Conf. 招待有り 国際会議
J. Yuhara, K. Morita
Application of Accelerators in Research & Industry
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Desorption of metal atoms adsorbed at the liquid-solid interface by in-situ RBS measurement 国際会議
K. Morita, J. Yuhara, R. Ishigami, B. Tsuchiya, K. Soda, K. Saitoh, S. Yamamoto, P. Goppelt-Langer, Y. Aoki, H. Takeshita, and H. Naramoto
14th Int. Conf. Application of Accelerators in Research & Industry
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Influence of Ag adsorbate on the Si(111)root3×root3-(Au,Cu) structure 国際会議
J. Yuhara, D. Ishikawa, K. Morita
2nd Int. Sym. on Control of Semiconductor Interfaces
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RBS-channeling analysis of Er delta-doped InP(001) crystal 国際会議
J. Yuhara, H. Takeda, , N. Matsubara, M. Tabuchi, Y. Fujiwara, K. Morita, Y. Takeda
Japan-Russia Symposium on atomic collision in solid
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An In-Situ RBS System for Measuring Nuclides Adsorbed at The Liquid-Solid Interface 国際会議
K. Morita, J. Yuhara, R. Ishigami, B. Tsuchiya, K. Saitoh, S. Yamamoto, P. Goppelt-Langer, Y. Aoki, H. Takeshita, H. Naramoto
7th Int. Sym. on Advanced Nuclear Energy Research
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Structural Analysis of Erbium d-doped InP by OMVPE with RBS-channeling 国際会議
J. Yuhara, H. Takeda, , N. Matsubara, Y. Fujiwara, K. Morita, Y. Takeda
7th Int. Sym. on Advanced Nuclear Energy Research
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Atomic Structures and Compositions of Binary Noble Metal Adsorbates on the Si(111) Surface Induced by Thermal Annealing 国際会議
J. Yuhara and K. Morita
Japan-Russia Seminar on Semiconductor Surfaces
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High Energy Ion Scattering Analysis of Thin Metal Films on the Semiconductor Surfaces 国際会議
J. Yuhara, K. Morita
Ion Scat. Spect. for Appl. on Surf. Sci.
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Ar+ ion recoil-implantation of Cu and Ag from the Si(111)-quasi-5×5 and Cu/Si(111)-root3×root3-Ag surfaces in the keV regime 国際会議
D. Ishikawa, J. Yuhara, R. Ishigami, K. Soda, K. Morita
13th Int. Vac. Cong. and 9th Int. Conf. on Solid Surf.
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Dissolution and segregation of monolayer Cu, Ni and Co atoms on the Si(111)-root3×root3-Ag surface induced by thermal annealing 国際会議
J. Yuhara, R.Ishigami, K. Morita
5th Int. Conf. on the Formation of Semiconductor Interfaces
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Dissolution and segregation of Cu and Ni by the effect Ag adsorbate at the Si(111) surface 国際会議
J. Yuhara, R. Ishigami, D. Ishikawa, K. Morita
Excitation at Semiconductor Surfaces (Gordon conference)
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The change of atomic structures and compositional ratios by thermal annealing of 2D Ag-Cu binary adsorbates on the Si(111) surface 国際会議
J. Yuhara, R. Ishigami, K. Morita
1st Int. Sym. on Control of Semiconductor Interfaces
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Intermixing depth induced by initial chemical reaction in metal-semiconductor interfaces 国際会議
J. Yuhara, R. Ishigami, K. Morita
4th Int. Conf. on the Formation of Semiconductor Interfaces