Presentations -
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CHARACTERIZATION AND THE PHYSICAL PROPERTIES OF MBE GROWN NdFeAsO THIN FILMS International conference
The International Symposium on Superconductivity (ISS2009)
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MBE GROWTH AND CHARACTERIZATION OF NdFeAsO THIN FILMS International conference
The International Symposium on Superconductivity (ISS2009)
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High Brightness Electron Source Using Semiconductor Photocathodes with Negative Electron Affinity Surface for Pulse Electron Gun International conference
The Twelfth Frontiers of Electron Microscopy in Materials Science(FEMMS2009)
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*Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent International conference
The 14th International Conference on X-ray Absorption Fine Structure (XAFS14)
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*Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement International conference
2009 Indium Posphide and Related Materials (IPRM2009)
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MOVPE reactor and X-ray CTR measurement system for GaN and related compounds
8th Akasaki Research Center Symp.
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Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask in molecular-beam epitaxy International conference
14th Inter. Conf. Thin Films and Reactive Sputter Deposition
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Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime International conference
Workshop on Sources of Polarized Electrons and High Brightness Electron Beams(PESP2008)
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Surface X-ray diffraction studies of CaF2(110)/Si(001) interface formation, International conference
XXI Congress and General Assembly of the International Union of Crystallography
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Co Epitaxial Nanoparticles on CaF2/Si(111): MBE Growth, GIXRD and X-ray Reflectometr International conference
Meeting Booklet of International Conference on Surface X-ray and Neutron Scattering
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Atomic structure of CaF2(110)/Si(001) interface studied byby surface X-ray diffraction International conference
10th International Conference on Surface X-ray and Neutron Scattering SXNS-10
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X-ray CTR scattering analysis of as accumulation on GaInAs surface and growth temperature effects International conference
Indium Posphide and Related Materials 2008
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"X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures " International conference
The 15th International Conference on Crystal Growth (ICCG15)
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"Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE " International conference
The 15th International Conference on Crystal Growth (ICCG15)
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"Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering " International conference
Indium Posphide and Related Materials 2007 (IPRM2007)
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" Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering"
6th Akasaki Research Center Symp.
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" Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask" International conference
14th International Conference on Molecular Beam Epitaxy
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"JAEA photocathode DC-gun for an ERL injector" International conference
28th Inter. Free Electron Laser Conf.
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" Measurement of composition grading at InP/GaInAs/InP hetero-interfaces by X-ray CTR scattering using synchrotron radiation" International conference
9 International conference on Synchrotron Radiation Instrumentation
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" Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement" International conference
13 International conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XIII)