講演・口頭発表等 - 田畑 彰守
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N2ガスを用いたホットワイヤー気相法による微結晶シリコン薄膜への窒化層形成
間崎耕司、田畑彰守、近藤明弘
第6回Cat-CVD研究会
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ガラス基板上へのｎ型ナノ結晶3C-SiC薄膜の低温堆積とその高品質化
星出純希、田畑彰守、北川明彦、近藤明弘
第17回SiC及び関連ワイドギャップ半導体研究会
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Improvement of electrical properties of n-type nanocrystalline 3C-SiC thin films prepared by hot-wire CVD at high H2-dilution 国際会議
30th International Symposium on Dry Process
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Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering and the plasma diagnostics. 国際会議
AVS 55th International Symposium and Exhibition
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Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering. 国際会議
1st International Conference on Microelectronics and Plasma Technology
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Properties of hydrogenated microcrystalline silicon thin films prepared by hot-wire CVD at high gas pressure conditions 国際会議
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. 国際会議
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas 国際会議
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2. 国際会議
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. 国際会議
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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N2ガスをドーピング原料としたn型ナノ結晶3C-SiC薄膜の開発
星出純希、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
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ホットワイヤーによるN2ガス分解
間崎耕司、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
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Enhancement of crystal growth in Si thin film deposition by H radical-assisted magnetron sputtering. 国際会議
1st International Conference on Plasma-Nanotechnology & Science
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Si sputtering deposition by Ar discharge with H radicals and the film evaluation 国際会議
18th Symposium of MRS
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SiH4/CH4/H2を用いたホットワイヤーCVD方によるナノ結晶SiC薄膜の膜構造のH2ガス流量依存性
SiC及び関連ワイドギャップ半導体研究会
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Effect of hydrogen radicals on silicon sputtering with argon-hydrogen mixture gas
6th Asian-European International Conference on Plasma SurfaceEngineering AEPSE
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Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances 国際会議
16th European Conference on Chemical Vapor Deposition
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フィラメント基板間距離を変えて作製したCat-CVD法によるナノ結晶3C-SiC薄膜の膜特性
第4回Cat-CVD研究会
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Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures 国際会議
2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
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Electrical properties of Microcrystalline silicon thin films prepared by RF magnetron sputtering 国際会議
20th Symposium on Plasma Science for Materials