Faculty Profiles - KISHIDA Hideo

Papers - KISHIDA Hideo

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Optical properties of branched silicon polymers Reviewed

H. Kishida, H. Tachibana, M. Matsumoto, and Y. Tokura

Japanese Journal of Applied Physics, Supplement Vol. 34 ( 1 ) page： 104-106 1995

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

Optical properties of the branched and network silicon polymers have been studied. By introduction of the branching points onto the polysilanes, the absorption spectrum, which is characterized by a sharp excitonic peak, changes gradually into the amorphous-like one, while the uv luminescence disappears immediately with branching and the broad visible luminescence shows up. The network polymers, in which all backbones atoms are coordinated by three other backbone atoms in the limit of branching, show amorphous-like absorption spectra. by Ge-substitution for Si atoms in the backbone of network polymers, and absorption edge as well as the luminescence peak shift to the lower energy side by c.a. 0.5eV.

DOI： 10.7567/JJAPS.34S1.104

Electric-field-induced second-harmonic generation mediated by one-dimensional excitons in polysilanes Reviewed

H. Kishida, T. Hasegawa, Y. Iwasa, T. Koda, Y. Tokura, H. Tachibana, M. Matsumoto, S. Wada, T. T. Lay, and H. Tashiro

Physical Review B Vol. 50 ( 11 ) page： 7786-7792 1994.9

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

The third-order nonlinear-susceptibility χ(3)(-2ω;ω,ω,0) spectrum has been investigated for thin films of linear-Si-chain compounds, poly(dihexylsilane), by measurements of electric-field-induced second-harmonic generation (EFISHG). In the χ(3) spectrum for EFISHG, two-photon resonance structures to the first and second levels of one-dimensional excitons were observed. The observed χ(3) spectrum can be accounted for by considering multiple optical processes in the one-dimensional excitonic series characteristic of the Si-chain system.

DOI： 10.1103/PhysRevB.50.7786

Optical spectra of Si/Ge-network copolymers : [Si(C₆H₁₃)]_1-x[Ge(C₆H₁₃)]_x Reviewed

H. Kishida, H. Tachibana, M. Matsumoto, and Y. Tokura

Applied Physics Letters Vol. 65 ( 11 ) page： 1358-1360 1994.9

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

Optical properties of silicon- and germanium-based network copolymers, [Si(C6H13)]1-x[Ge(C6H13)]x, have been investigated for various Si/Ge compositions (x). The backbone Si/Ge atoms are coordinated by the three other Si/Ge backbone atoms in the polymers. These Si/Ge copolymers show the absorption spectra which are typical of amorphous semiconductors. Their color continuously traverses the visible range with x, which is due to the change of the band gap (Tauc gap) energy as well as to the presence of localized subgap states. The Si/Ge copolymer shows a broad band of luminescence in the visible region. The luminescence band maximum was observed to shift by 0.5 eV with change of the Si/Ge ratio.

DOI： 10.1063/1.112051

Nonlinear optical study of polysilanes Reviewed

T. Hasegawa, Y. Iwasa, T. Koda, H. Kishida, Y. Tokura, S. Wada, H. Tashiro,H. Tachibana, M. Matsumoto, and R. D. Miller

Supplement B to Journal of the physical society of Japan Vol. 63 page： 64-81 1994

Language：English Publishing type：Research paper (scientific journal)

Optical properties of the branched and network silicon polymers have been studied. By introduction of the branching points onto the polysilanes, the absorption spectrum, which is characterized by a sharp excitonic peak, changes gradually into the amorphous-like one, while the uv luminescence disappears immediately with branching and the broad visible luminescence shows up. The network polymers, in which all backbones atoms are coordinated by three other backbone atoms in the limit of branching, show amorphous-like absorption spectra. By Ge-substitution for Si atoms in the backbone of network polymers, an absorption edge as well as the luminescence peak shift to the lower energy side by c.a. 0.5eV.

Control of electronic structures of polysilanes and polygermanes Reviewed

Y. Tokura, H. Tachibana, H. Kishida, Y. Moritomo, and M. Matsumoto

Supplement B to Journal of the physical society of Japan Vol. 63 page： 30-45 1994

Crystal structure and optical properties of polymorphic octasilacubane Reviewed

H. Tachibana, M. Goto, M. Matsumoto, H. Kishida, and Y. Tokura

Applied Physics Letters Vol. 64 page： 2509-2510 1994.5

Language：English Publishing type：Research paper (scientific journal)

Single crystal x-ray crystallographic analysis of tert-butyloctasilacubane showed that a new polymorphic form ( form) exists with a slightly modified shape of the Si cage as compared with the previously reported form ( form) [K. Furukawa, M. Fujino, and N. Matsumoto, Appl. Phys. Lett. 60, 2744 (1991)]. Spectroscopic investigations of the single crystal indicate that the electronic band gap and luminescence band position differ by ~0.4 eV between the polymorphs, signaling the sensitivity of the electronic structure to the distortion of the octasilacubane framework. Applied Physics Letters is copyrighted by The American Institute of Physics.

DOI： 10.1063/1.111556

Dispersion relation in the third-order electric susceptibility for polysilane film Reviewed

H. Kishida, T. Hasegawa, Y. Iwasa, T. Koda, and Y. Tokura

Physical Review Letters Vol. 70 ( 24 ) page： 3724-3727 1993.6

Nonlinear optical properties of polysilanes Reviewed

T. Hasegawa, Y. Iwasa, H. Kishida, T. Koda, Y. Tokura, H. Tachibana, and Y. Kawabata

Molecular Crystals and Liquid Crystals Vol. 217 page： 25-30 1992.6

Language：English Publishing type：Research paper (scientific journal)

We have measured a spectrum of third-order nonlinear optical susceptibility |x (3)(-3;,,)| of -conjugated polysilane, poly(di-n-hexylsilane) (PDHS), by means of third-harmonic generation (THG) measurement, in the fundamental photon energy region from 0.56 eV to 2.15 eV. The obtained | x (3)(3; , , )| spectrum exhibits three peaks. These peaks are interpreted as the multi-photon resonance enhancement to the one-dimensional exciton states. This exciton model can be applied also to the nonlinear optical response of other conjugated polymers.

DOI： 10.1080/10587259208046871

Two-photon resonant third-harmonic generation in polysilanes Reviewed

T. Hasegawa, Y. Iwasa, H. Kishida, T. Koda, Y. Tokura, H. Tachibana, and Y. Kawabata

Physical Review B Vol. 45 ( 11 ) page： 6317-6320 1992.3

Language：English Publishing type：Research paper (scientific journal)

Third-order nonlinear-optical susceptibility spectra ‖χ(3)(-3ω;ω,ω,ω)‖ have been obtained for poly(dihexylsilane) (PDHS) and poly(dibutylsilane) (PDBS) films by third-harmonic generation (THG) measurements for a fundamental photon energy region from 1.90 to 2.15 eV, which covers the two-photon absorption (TPA) for PDHS but not for PDBS. The ‖χ(3)‖ spectrum for PDHS shows a prominent peak at about 2.08 eV with a maximum value of about 2.3×10-12 esu, while there is no enhancement effect in PDBS in the same fundamental photon energy region. These results provide direct evidence for the two-photon-resonant THG process in polysilanes due to the one-photon-forbidden 1Ag exciton detected by TPA and electroabsorption measurements.

DOI： 10.1103/PhysRevB.45.6317

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