出版者・発行元：Superconductivity  

The pinning of quantized magnetic vortices in superconducting YBa2Cu3O7- δ(YBCO or Y123) thin films with Y2BaCuO5 (Y211) nanoinclusions have been investigated over wide temperature range (4.2–77 K). The concentration of Y211 nanoinclusions has been systematically varied inside YBCO thin films prepared by laser ablation technique using surface modified target approach. Large pinning force density values (Fp ∼ 0.5 TNm−3 at 4.2 K, 9 T) have been observed for the YBCO film with moderate concentration of Y211 nanoinclusions (3.6 area % on ablation target). In addition, uniform enhancement in critical current density (Jc) was observed in the angular dependent Jc measurement of YBCO+Y211 nanocomposite films. Y211 nanoinclusions have been found to be very efficient in pinning the quantized vortices thereby enhancing the in-field Jc values over a wide range of temperature. Increasing the concentration of Y211 secondary phase into Y123 film matrix results into agglomeration of Y211 phase and observed as increased Y211 nanoparticle size. These larger secondary phase nanoparticles are not as efficient pinning centers at lower temperatures as they are at higher temperatures due to substantial reduction of the coherence length at lower temperatures. Investigation of the temperature dependence of Jc for YBCO+Y211 nanocomposite films has been conducted and possible vortex pinning mechanism in these nanocomposite films has been discussed.

DOI： 10.1016/j.supcon.2024.100087

Scopus

担当区分：最終著者,　責任著者   出版者・発行元：ACS Applied Electronic Materials  

To improve the thermoelectric properties of SnSe films, carrier control is required, but elemental doping is difficult due to the thermodynamic solubility limit. Isovalent elements may generate holes or electrons not in a direct manner but in the manner to form point defects. In this study, the Sn(Se,Te) films were fabricated by a pulsed laser deposition (PLD) method to control the carrier concentration by substituting isovalent Te for Se. The coexistence of the orthorhombic and cubic phases at the tens of nanometer scale in the SnSe0.5Te0.5 film was clarified by the structural observation, which is consistent with the equilibrium phase diagram. In spite of the phase coexistence, the lattice parameters linearly increased with an increase in the Te content in the Sn(Se,Te) films. This demonstrates the metastable composition situation for each phase, namely, the carrier control beyond the thermodynamic limit due to the nonequilibrium growth in PLD. As a result, the Seebeck coefficient decreased, and the electrical conductivity increased to increase the power factor, especially in a low temperature near room temperature. The Te substitution in the nonequilibrium PLD increases the hole concentration beyond the thermodynamic solubility limit and thus is effective in controlling the carrier in the SnSe films where carrier doping is difficult.

DOI： 10.1021/acsaelm.3c01490

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   掲載種別：研究論文（学術雑誌）   出版者・発行元：ACS Applied Energy Materials  

Thermoelectric energy conversion is promising for high-efficiency power generation. The p- and n-type thermoelectric materials are required to fabricate high-performance thermoelectric modules. SnSe is one of the highest-performance thermoelectric materials, and SnSe films should be fabricated for small-scale applications. While the p-type SnSe films can be easily prepared without precise control of the doping, it is difficult to control the electron concentration in the n-type SnSe films. In this study, the Bi-doped SnSe films were fabricated at low deposition temperatures by using the self-buffer layer, namely, the SnSe-based buffer layers. The low-temperature deposition on the buffer layer increased the concentration of doped Bi, although the contribution of the buffer layer to the electronic conduction was observed. The π-type thermoelectric module consisting of p-type SnSe and n-type SnSe/buffer layers was fabricated. The output power of 0.09 μW and the open-circuit voltage of 0.11 V were obtained at 155 °C at the cold end and 255 °C at the hot end. The feasibility of fabricating the π-type SnSe film module was demonstrated. By optimizing the buffer layer thickness and increasing the number of legs, we expect the module performance to be further improved.

DOI： 10.1021/acsaem.3c02683

Web of Science

Scopus

担当区分：最終著者,　責任著者  

DOI： 10.35848/1347-4065/ad009f

Web of Science

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1088/1361-6668/acecad