Updated on 2023/10/11

写真a

 
ARAI Manabu
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated professor
Title
Designated professor
Contact information
メールアドレス

Degree 1

  1. Dr. （ Tohoku University ） 

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Research Interests 5

  1. 高周波デバイス

  2. パワーデバイス

  3. GaN

  4. SiC

  5. ワイドバンドギャップ半導体

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Research Areas 1

  1. Others / Others  / 半導体・プロセス

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Research History 1

  1. 新日本無線株式会社

    1997.4 - 2020.6

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    Country：Japan

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Education 3

  1. Tohoku University   Graduate School, Division of Engineering

    - 1997.3

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    Country： Japan

  2. Tohoku University   Graduate School, Division of Engineering

    - 1994.3

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    Country： Japan

  3. Tohoku University   Faculty of Engineering

    - 1992.3

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    Country： Japan

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Professional Memberships 3

  1. 電子情報通信学会

  2. 応用物理学会

  3. IEEE

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Committee Memberships 2

  1. 電子情報通信学会　電子デバイス研究専門委員会   副委員長  

       

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    Committee type：Academic society

  2. 応用物理学会　先進パワー半導体分科会   幹事  

       

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Papers 3

  1. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

    Kawasaki Seiya, Kumabe Takeru, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Honda Yoshio, Arai Manabu, Amano Hiroshi

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 8 ) page： 1328 - 1331   2023.8

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    Publisher：IEEE Electron Device Letters  

    An experimental study on the effects of junction capacitance and current density on the oscillation characteristics of GaN single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes were carried out using GaN p+-n abrupt junction diodes of various diameters, 200, 150, and 100 μ m , with a depletion layer width of 2 μ m. The fabricated diodes showed a clear avalanche breakdown at 315 V and a pulsed microwave oscillation with a peak output power exceeding 30 dBm. The oscillation frequency depended on junction diameter and current density. It was widely modulated from 8.56 to 21.1 GHz with decreasing junction diameter and increasing current density. The highest oscillation frequency was obtained with a current density of 13.8 kA/cm2 and a junction diameter of 100 μ m. A numerical calculation based on Read-type small-signal theory was carried out and found to well explain the experimental results.

    DOI： 10.1109/LED.2023.3285938

    Web of Science

    Scopus

  2. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    Publisher：Applied Physics Express  

    DOI： 10.35848/1882-0786/abe3dc

    Web of Science

    Scopus

  3. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K., Hashimoto M., Matsukawa N., Matsuo A., Mouraguchi A., Arai M., Shimizu N.

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page： 451 - 454   2020

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Presentations 1

  1. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    DOI： 10.1109/ISPSD46842.2020.9170099

    Scopus

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