2023/09/20 更新

写真a

トミダ ダイスケ
冨田 大輔
TOMIDA Daisuke
所属
未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部 特任准教授
職名
特任准教授

学位 1

  1. 博士(工学) ( 2006年3月   東北大学 ) 

 

論文 7

  1. Temperature field, flow field and temporal fluctuations thereof in ammonothermal growth of bulk GaN - transition from dissolution stage to growth stage conditions 査読有り 国際共著

    S. Schimmel, D. Tomida, T. Ishiguro, Y. Honda , S. F. Chichibu, H. Amano

    Materials   16 巻 ( 5 ) 頁: 2016   2023年2月

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    担当区分:責任著者  

  2. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN 査読有り 国際共著

    Schimmel Saskia, Salamon Michael, Tomida Daisuke, Neumeier Steffen, Ishiguro Tohru, Honda Yoshio, Chichibu Shigefusa F., Amano Hiroshi

    Materials   15 巻 ( 17 ) 頁: 6165 1 - 17   2022年9月

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    記述言語:英語   出版者・発行元:Materials  

    For the fundamental understanding and the technological development of the ammonothermal method for the synthesis and crystal growth of nitrides, an in situ monitoring technique for tracking mass transport of the nitride throughout the entire autoclave volume is desirable. The feasibility of using high-energy computed tomography for this purpose was therefore evaluated using ex situ measurements. Acceleration voltages of 600 kV were estimated to yield suitable transparency in a lab-scale ammonothermal setup for GaN crystal growth designed for up to 300 MPa operating pressure. The total scan duration was estimated to be in the order of 20 to 40 min, which was sufficient given the comparatively slow crystal growth speed in ammonothermal growth. Even shorter scan durations or, alternatively, lower acceleration voltages for improved contrast or reduced X-ray shielding requirements, were estimated to be feasible in the case of ammonoacidic growth, as the lower pressure requirements for this process variant allow for thinned autoclave walls in an adapted setup designed for improved X-ray transparency. Promising nickel-base and cobalt-base alloys for applications in ammonothermal reactors with reduced X-ray absorption in relation to the maximum operating pressure were identified. The applicability for the validation of numerical simulations of the growth process of GaN, in addition to the applicability of the technique to further nitride materials, as well as larger reactors and bulk crystals, were evaluated.

    DOI: 10.3390/ma15176165

    Web of Science

    Scopus

    PubMed

  3. Facile method for the synthesis of zinc- or magnesium-doped gallium nitride powders from gallium metal 査読有り

    Daisuke Tomida, Quanxi Bao, Makoto Saito, Kouhei Kurimoto, Kazunobu Kojima, Kun Qiao, Tohru Ishiguro, Shigefusa F. Chichibu

    Journal of Crystal Growth   570 巻   頁: 126190 - 126190   2021年5月

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    担当区分:筆頭著者, 責任著者   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier BV  

    DOI: 10.1016/j.jcrysgro.2021.126190

  4. Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects 査読有り

    Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu S., Amano H.

    Crystals   11 巻 ( 4 )   2021年4月

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    記述言語:英語   出版者・発行元:Crystals  

    Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important semiconductor material. This review presents an overview of the literature on simulations targeting ammonothermal growth of GaN. Approaches for validation are also reviewed, and an overview of available methods and data is given. Fluid flow is likely in the transitional range between laminar and turbulent; however, the time-averaged flow patterns likely tend to be stable. Thermal boundary conditions both in experimental and numerical research deserve more detailed evaluation, especially when designing numerical or physical models of the ammonothermal growth system. A key source of uncertainty for calculations is fluid properties under the specific conditions. This originates from their importance not only in numerical simulations but also in designing similar physical model systems and in guiding the selection of the flow model. Due to the various sources of uncertainty, a closer integration of numerical modeling, physical modeling, and the use of measurements under ammonothermal process conditions appear to be necessary for developing numerical models of defined accuracy.

    DOI: 10.3390/cryst11040356

    Scopus

  5. Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth – a machine-learning assisted study of autoclave wall temperature distribution 査読有り

    S. Schimmel, D. Tomida, M. Saito, Q. Bao, T. Ishiguro, Y. Honda, S. F, Chichibu, H. Amano

    Crystals   11 巻 ( 3 ) 頁: 254 - 254   2021年3月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Crystals  

    Thermal boundary conditions for numerical simulations of ammonothermal GaN crystal growth are investigated. A global heat transfer model that includes the furnace and its surroundings is presented, in which fluid flow and thermal field are treated as conjugate in order to fully account for convective heat transfer. The effects of laminar and turbulent flow are analyzed, as well as those of typically simultaneously present solids inside the autoclave (nutrient, baffle, and multiple seeds). This model uses heater powers as a boundary condition. Machine learning is applied to efficiently determine the power boundary conditions needed to obtain set temperatures at specified locations. Typical thermal losses are analyzed regarding their effects on the temperature distribution inside the autoclave and within the autoclave walls. This is of relevance because autoclave wall temperatures are a convenient choice for setting boundary conditions for simulations of reduced domain size. Based on the determined outer wall temperature distribution, a simplified model containing only the autoclave is also presented. The results are compared to those observed using heater-long fixed temperatures as boundary condition. Significant deviations are found especially in the upper zone of the autoclave due to the important role of heat losses through the autoclave head.

    DOI: 10.3390/cryst11030254

    Scopus

  6. Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave 査読有り

    Daisuke Tomida, Quanxi Bao, Makoto Saito, Ryu Osanai, Kohei Shima, Kazunobu Kojima, Tohru Ishiguro, Shigefusa F. Chichibu

    Applied Physics Express   13 巻 ( 5 ) 頁: 055505-1 - 5   2020年4月

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    担当区分:筆頭著者, 責任著者  

  7. Thermal Conductivity Measurements of Liquid Ammonia by the Transient Short‑Hot‑Wire Method 査読有り

    Daisuke Tomida, Tohru Yoshinaga

    International Journal of Thermophysics   5 巻 ( 41 ) 頁: 53   2020年3月

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    担当区分:筆頭著者, 責任著者  

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書籍等出版物 1

  1. Ammonothermal Synthesis and Crystal Growth of Nitrides

    Daisuke Tomida, Makoto Saito, Quanxi Bao, Tohru Ishiguro, Shigefusa F. Chichibu( 担当: 共著 ,  範囲: Chapter 5, Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals, pp.65-76)

    Springer  2021年2月 

講演・口頭発表等 11

  1. Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration 国際共著 国際会議

    S. Schimmel, D. Tomida, T. Ishiguro, Y. Honda, S. F. Chichibu, H. Amano

    International Workshop on Nitride Semiconductors (IWN2022)  2022年10月11日 

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    開催年月日: 2022年10月

  2. In situ monitoring technologies as prospective validation tools for numerical simulations of ammonothermal crystal growth 国際共著 国際会議

    Saskia Schimmel, Michael Salamon, Daisuke Tomida, Tohru Ishiguro, Yoshio Honda, Shigefusa F. Chichibu, Hiroshi Amano

    European Conference on Crystal Growth (ECCG7)  2022年7月26日 

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    開催年月日: 2022年7月

  3. High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN 国際共著 国際会議

    S. Schimmel, M. Salamon, D. Tomida, T. Ishiguro, Y. Honda, S.F. Chichibu, H. Amano

    8th International Workshop on Crystal Growth Technology (IWCGT-8)  2022年5月30日 

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    開催年月日: 2022年5月 - 2022年6月

  4. Numerical simulations of ammonothermal crystal growth of GaN and pathways towards their experimental validation 国際共著

    S. Schimmel, D. Tomida, M. Saito, Q. Bao, T. Ishiguro, Y. Honda, S. F. Chichibu, H. Amano, P. Wellmann

    Deutsche Kristallzüchtungstagung (DKT 2021) 

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    開催年月日: 2021年10月

  5. 混合鉱化剤を用いた低圧酸性アモノサーマル法によるGaN 結晶育成

    冨田 大輔,Saskia Schimmel, 斉藤 真, 包 全喜, 石黒 徹, 本田 善央, 秩父 重英, 天野 浩

    第82回応用物理学会秋季学術講演会  2021年9月12日 

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    開催年月日: 2021年9月

  6. Simulation of the global thermal field in a setup for ammonothermal growth of GaN

    Saskia Carola Schimmel;Daisuke Tomida;Makoto Saito;Quanxi Bao;Toru Ishiguro;Yoshio honda;Shigefusa F. Chichibu;Hiroshi Amano

    第68回 応用物理学会春季学術講演会  2021年3月17日 

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    開催年月日: 2021年3月

  7. Evaluation of realistic boundary conditions for simulations of ammonothermal GaN crystal growth

    S. Schimmel, D. Tomida, M. Saito, Q. Bao, T. Ishiguro, Y. Honda, S. F. Chichibu, H. Amano

    The 8th Asian Conference on Crystal Growth and Crystal Technology  2021年3月2日 

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    開催年月日: 2021年3月

  8. Recent progress of low-pressure acidic ammonothermal growth of gallium nitride

    CIRFE GaN Webinar Series ~ Poland-Japan (Unipress-NU) Seminar on GaN ~  2020年11月20日 

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    開催年月日: 2020年11月

  9. 低圧酸性アモノサーマル法によるGaN結晶育成の初期成長制御

    冨田 大輔, Saskia Schimmel, 斉藤 真, 包 全喜, 栗本 浩平, 石黒 徹, 秩父 重英, 本田 善央, 天野 浩

    第81回応用物理学会秋季学術講演会  2020年9月10日 

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    開催年月日: 2020年9月

  10. PVT properties of the ammonia + ammonium halide mixtures

    Daisuke Tomida

    日本化学会第100春季年会 

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    開催年月日: 2020年3月

  11. Thermal conductivity measurements of liquid ammonia by the transient short-hot-wire method

    Daisuke Tomida, Tohru Yoshinaga, Chiaki Yokoyama

    The 12th Asian Thermophysical Properties Conference  2019年10月2日 

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