Organization
Institute of Materials and Systems for Sustainability TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair Designated professor
Title
Designated professor
KANECHIKA Masakazu
Degree 1
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博士（工学） （ 2003.2 広島大学 ）
Papers 11
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Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun
APPLIED PHYSICS LETTERS Vol. 115 ( 14 ) 2019.9
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Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography Invited Reviewed
Japanese Journal of Applied Physics Vol. Vol.58 ( No.SC ) page： SCCD22-1 - SCCD22-4 2019.6
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Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SC ) 2019.6
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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun
IEEE ELECTRON DEVICE LETTERS Vol. 40 ( 6 ) page： 941 - 944 2019.6
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Maeda T.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs Vol. 2019-May page： 59 - 62 2019.5
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Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect
Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) page： 59 - 62 2019
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Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun
APPLIED PHYSICS LETTERS Vol. 112 ( 25 ) 2018.6
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Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun
APPLIED PHYSICS EXPRESS Vol. 11 ( 4 ) 2018.4
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Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination
Maeda T., Narita T., Ueda H., Kanechika M., Uesugi T., Kachi T., Kimoto T., Horita M., Suda J.
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2018
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Ion implantation technique for conductivity control of GaN
Narita T.
17th International Workshop on Junction Technology, IWJT 2017 page： 87 - 90 2017.6
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Ion implantation technique for conductivity control of GaN
Narita Tetsuo, Kataoka Keita, Kanechika Masakazu, Kachi Tetsu, Uesugi Tsutomu
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) page： 87 - 90 2017