Faculty Profiles - HORITA Masahiro

写真a

HORITA Masahiro

Organization

Graduate School of Engineering Electronics 2 Associate professor

Graduate School

Graduate School of Engineering

Undergraduate School

School of Engineering Electrical Engineering, Electronics, and Information Engineering

Contact information

Degree 1

博士（工学）（ 2009.3 京都大学）

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Research Interests 5

III-N semiconductor
gallium nitride
電子デバイス
point defect characterization
Deep level transient spectroscopy (DLTS)

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Research Areas 2

Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
Nanotechnology/Materials / Crystal engineering

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Current Research Project and SDGs 1

Study on deep levels in GaN

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Research History 6

Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor

2018.10

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Country：Japan
Nagoya University Department of Electronics, Graduate School of Engineering Associate professor

2018.10

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Country：Japan
Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section

2018.10 - 2038.3
Kyoto University Department of Electronic Science and Engineering, Graduate School of Engineering

2015.5 - 2018.9

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Country：Japan
Nara Institute of Science and Technology Graduate School of Materials Science Assistant Professor

2009.4 - 2015.4

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Country：Japan
Japan Society for Promotion of Science

2008.4 - 2009.3

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Country：Japan

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Education 1

Kyoto University Graduate School, Division of Engineering

2006.4 - 2009.3

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Country： Japan

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Professional Memberships 6

応用電子物性分科会

2023.12
結晶工学分科会

2023.12
The Japan Society of Wide Gap Semiconductors

2021.4
Advanced Power Semiconductors

2016.12
the Japanese Association for Crystal Growth

2006.11
The Japan Society of Applied Physics

2004.1

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Committee Memberships 8

2024年国際固体素子・材料コンファレンス論文総務

2024.1
International Conference on Solid State Devices and Materials 2023 Program Committee

2023.1 - 2023.12

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Committee type：Academic society
International Conference on Solid State Devices and Materials 2022 Program Committee

2022.1 - 2022.12

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Committee type：Academic society
ワイドギャップ半導体学会企画幹事

2021.4

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Committee type：Academic society
International Conference on Materials and Systems for Sustainability Program Committee

2021.1 - 2021.12

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Committee type：Other
第14回窒化物半導体国際会議プログラム庶務委員

2019.9 - 2024.3

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Committee type：Academic society
International Conference on Solid State Devices and Materials 2019 Steering Committee

2019.1 - 2019.12

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Committee type：Academic society
第37,38回電子材料シンポジウム実行委員

2018.10 - 2019.3

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Committee type：Academic society

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Papers 57

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Ito, K; Tanaka, H; Horita, M; Suda, J; Kimoto, T

APPLIED PHYSICS EXPRESS Vol. 17 ( 8 ) 2024.8

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Publisher：Applied Physics Express

Free electron mobility (μ free) in 4H-SiC(0001) MOSFETs with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.

DOI： 10.35848/1882-0786/ad63ef

Web of Science

Scopus
Transport Properties in GaN Metal-Oxide-Semiconductor Field-Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p-Type GaN Gate Stack

Narita, T; Ito, K; Tomita, K; Iguchi, H; Iwasaki, S; Horita, M; Kano, E; Ikarashi, N; Kikuta, D

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2024.7

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Publisher：Physica Status Solidi - Rapid Research Letters

The factors limiting channel mobility in AlSiO/p-type GaN metal–oxide–semiconductor (MOS) field-effect transistors are examined by performing Hall-effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect is significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons are trapped to a significant extent at the MOS interface. These interface traps are found to have an energy ≈20 meV above the Fermi level in strong inversion based on temperature-dependent Hall effect data. The insertion of a 0.8 nm-thick AlN interlayer eliminates charge trapping such that almost all gate charges are mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states are evidently reduced by inserting the AlN interlayer, which also enhances the channel mobility to over 150 cm2 V−1s−1.

DOI： 10.1002/pssr.202400141

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Scopus
Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers Reviewed

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS Vol. 17 ( 1 ) 2024.1

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Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing Shockley-Read-Hall (SRH) recombination currents in homoepitaxial GaN p-n junctions. These defects were intentionally generated by electron beam (EB) irradiation at 137 keV. The net doping concentrations in p+-n junction diodes were not changed following irradiation although the levels in p-n+ junction diodes decreased as the EB fluence was increased. The SRH recombination current also increased with increases in the fluence. This work additionally evaluated the relationship between recombination lifetimes and trap concentrations obtained by deep level transient spectroscopy.

DOI： 10.35848/1882-0786/ad16ad

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Scopus
High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3 Reviewed

Ito, K; Horita, M; Suda, J; Kimoto, T

APPLIED PHYSICS EXPRESS Vol. 16 ( 7 ) 2023.7

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Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field (E eff). The Hall mobility (μ Hall) in the high-E eff region of the MOSFETs annealed in phosphoryl chloride (μ Hall = 41 cm2 V−1 s−1 at E eff = 1.1 MV cm−1) is much higher than that of MOSFETs annealed in nitric oxide (NO) (μ Hall = 14 cm2 V−1 s−1 at E eff = 1.1 MV cm−1), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA.

DOI： 10.35848/1882-0786/ace150

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Scopus
Correlation between non-ionizing energy loss and production rate of electron trap at EC - (0.12-0.20) eV formed in gallium nitride by various types of radiation Reviewed

Aoshima, K; Horita, M; Suda, J

APPLIED PHYSICS LETTERS Vol. 122 ( 1 ) 2023.1

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Production rate (PR = trap concentration/incident fluence) of traps formed by energetic particles is important for predicting device degradation caused by radiation when developing radiation-resistant devices. We demonstrate a clear correlation between non-ionizing energy loss (NIEL) and PR of an electron trap at about 0.12-0.20 eV below the conduction band edge [EC - (0.12-0.20) eV] for various types of energetic particles in gallium nitride (GaN). NIEL values in GaN for electrons, protons, and α-rays were calculated using a screened-relativistic treatment, and NIEL values for gamma-rays were calculated by simulating slowed-down spectra due to shielding material. To obtain the PRs of the electron trap, 60Co gamma-rays with an average photon energy of 1.25 MeV and electron beams with energies from 137 keV to 2 MeV were irradiated onto n-type GaN Schottky barrier diodes. We measured the concentration of an electron trap at EC - (0.13-0.14) eV using deep-level transient spectroscopy. We also used the PRs of electron traps with similar energy levels of EC - (0.12-0.20) eV from previous studies on electrons, protons, and α-rays irradiated on GaN. All the trap PRs were proportional to the NIEL in a range of eight orders of magnitude, which confirms that the energy levels formed by various energetic particles have the same origin of being generated by atomic displacements. The obtained relationship coefficient between the NIEL and PRs of the trap is useful for predicting the degradation of GaN-based devices due to traps formed by various kinds of radiation.

DOI： 10.1063/5.0128709

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Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Reviewed

Ito K., Narita T., Iguchi H., Iwasaki S., Kikuta D., Kano E., Ikarashi N., Tomita K., Horita M., Suda J.

Technical Digest - International Electron Devices Meeting, IEDM 2023

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Polarization engineering by AIN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstrated in AlSiO/p-type GaN MOSFETs. Transmission electron microscopy observations revealed that the AlN-ILs were grown on GaN epitaxially and therefore could induce polarization charges, similar to AlGaN/GaN. The decrease in the threshold voltage (Vth) with increasing AIN-IL thickness corresponded to the polarization charge density. In addition, insertion of the AIN-IL suppressed the positive bias instability by less than 0.05 V. By controlling the AIN-IL thickness and the channel p-type doping, we controlled the Vth the range from -3 to 5 V and achieved enhanced channel mobility compared with that for the corresponding MOSFET without an AIN-IL.

DOI： 10.1109/IEDM45741.2023.10413714

Scopus
Depth profiling of E <inf>C</inf> - 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing Reviewed

Iguchi H., Horita M., Suda J.

Applied Physics Express Vol. 15 ( 12 ) 2022.12

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Si ions were implanted into homoepitaxial n-type GaN at a peak concentration of 3 × 1014 cm−3 with subsequent annealing, and the associated formation of electron traps was investigated in detail using deep-level transient spectroscopy. A major electron trap was identified as 0.26 eV below the conduction band minimum and this trap concentration increased with increasing post-implantation annealing temperature, to a value of 6-8 × 1015 cm−3. Significant increases in the net donor concentration (N D) were also observed within the implanted region. The profile of the electron trap concentration was correlated with these increases in N D, suggesting that these traps acted as donors.

DOI： 10.35848/1882-0786/aca45d

Scopus
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing Reviewed

Kachi, T; Narita, T; Sakurai, H; Matys, M; Kataoka, K; Hirukawa, K; Sumida, K; Horita, M; Ikarashi, N; Sierakowski, K; Bockowski, M; Suda, J

JOURNAL OF APPLIED PHYSICS Vol. 132 ( 13 ) 2022.10

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P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance of vertical GaN power devices. UHPA allows a high-temperature process without decomposition of the GaN surface and virtually complete activation of the implanted Mg ions in GaN. In the present paper, we provide an overview of recent challenges in making UHPA more realistic as an industrial process. Instead of UHPA at more than 1400 °C for a short duration, prolonged UHPA at 1300 °C demonstrates a comparable acceptor activation of Mg-ion-implanted GaN. This can reduce the annealing pressure to approximately 300 MPa and enlarge the processable wafer diameter. The second challenge is controlling the doping profiles in the lateral and vertical directions. We demonstrate fine patterning of the p-type regions, which indicates the limited lateral diffusion of Mg through UHPA. However, controlling the vertical doping profile is challenging. The nitrogen vacancies formed by ion implantation reduce the effective acceptor concentration near the surface, which can be compensated for by sequential nitrogen ion implantation. Defect-assisted Mg diffusion to the deeper region causes a redistribution of the Mg atoms and should be considered in the design of a device. Such anisotropic diffusion of Mg to the c-axis has potential applications in the fabrication of unique vertical device structures such as super junctions.

DOI： 10.1063/5.0107921

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Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations Reviewed

Ito, K; Horita, M; Suda, J; Kimoto, T

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 9 ) 2022.9

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Phosphorus treatment, which can substantially reduce the interface state density (D it), was used to investigate the impact of D it on effective channel mobility (μ eff) of 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs). A high μ eff of 126 cm2 V-1 s-1, which exceeds the reported phonon-limited mobility of 83 cm2 V-1 s-1 determined from Hall mobility of nitridation-treated MOSFETs, at a high effective normal field of 0.57 MV cm-1 was obtained in MOSFETs fabricated on a high-purity semi-insulating 4H-SiC substrate at room temperature. This high mobility may be caused by the difference of the density of electrons trapped at the interface states.

DOI： 10.35848/1347-4065/ac87e4

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Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN Reviewed

Iguchi, H; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS Vol. 15 ( 7 ) 2022.7

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Si ions were implanted at a dose of 1 × 1010 cm-2 into a homoepitaxial n-type GaN layer with a net donor concentration (N D) of 3-8 × 1015 cm-3. The N D in the implanted region increased by 1-3 × 1015 cm-3 after annealing at a temperature greater than 900 °C compared with that for the as-grown homoepitaxial layer. The increase in N D was considerably larger than the peak concentration of implanted Si ions (3 × 1014 cm-3). No increase in N D was observed for an as-grown sample after annealing. These results clearly suggest that donor-like defects were introduced by implantation of Si ions and a subsequent annealing process.

DOI： 10.35848/1882-0786/ac7433

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SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition Reviewed

Aoshima, K; Taoka, N; Horita, M; Suda, J

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5

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We present SiO2/GaN interfaces with a low interface state density and a high breakdown electric field. The SiO2 films were deposited by plasma-enhanced atomic layer deposition (ALD) using bis(diethylamino)silane and O2 plasma at 300 °C on n-type GaN (0001) homoepitaxial layers. An interface state density of less than 1011 cm-2 eV-1 at 0.3 eV below the conduction band edge was confirmed by the conductance method. The value is much lower than those of previously reported ALD-SiO2/GaN interfaces (1012-1013 cm-2 eV-1). A low fixed charge density at the SiO2/GaN interface of 3.7 × 1011 cm-2 and a high dielectric breakdown field of ∼10 MV cm-1 were obtained. Moreover, the interface state density and current-voltage characteristics were further improved by post-deposition annealing at 400 °C in N2 ambient. Scanning transmission electron microscopy with energy-dispersive X-ray analysis revealed the existence of a GaO x interlayer between SiO2 and GaN. The unintentionally formed interlayer could be one of the reasons for the improvement of interface properties at ALD-SiO2/GaN.

DOI： 10.35848/1347-4065/ac4f79

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Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN Reviewed

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS LETTERS Vol. 120 ( 14 ) 2022.4

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This work investigated deep levels in p-type GaN originating from intrinsic point defects, using deep level transient spectroscopy (DLTS) to examine homoepitaxial GaN p+-p-n+ junction diodes grown via metalorganic vapor-phase epitaxy. Following exposure to an electron beam with an energy of 137 keV that generated nitrogen vacancies (VN) and nitrogen interstitials (NI), a peak due to EHa hole traps (at 0.52 eV) was observed in DLTS spectra. The injection of minority carriers resulting from applying a forward bias generated signals for EHb (0.5 eV) and EHc (0.8 eV) hole traps while decreasing the EHa signal and increasing the net accepter concentration. The generation of EHa traps can likely be attributed to VN (3+/+) or NI (2+/+) defects based on the results of first-principles calculations. The EHb and EHc hole traps may have been associated with complex defects, including those that generated EHa traps, because these two traps appeared as the concentration of EHa traps decreased.

DOI： 10.1063/5.0086535

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Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations Reviewed

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

IEEE ELECTRON DEVICE LETTERS Vol. 43 ( 1 ) page： 96 - 99 2022.1

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Breakdown characteristics in homoepitaxial GaN p-n junction diodes with p+-n and p-n+ junctions with relatively heavy doping concentrations are systematically investigated. The devices have vertical deep mesa etch termination, which enables uniform (nearly ideal) avalanche breakdown without electric field (E-field) crowding at the device edge. For p+-n junction, breakdown E-field of 3.0, 3.3 and 3.8 MV/cm and breakdown voltage (BV) of 340, 207 and 128 V were achieved at the donor concentrations of 7.5 × 1016, 1.5 × 1017, 3.1× 1017 cm-3, respectively. For p-n+ junction, breakdown E-field of 3.2, 3.3 and 4.0 MV/cm and BV of 235, 180 and 110 V were achieved at the acceptor concentrations of 1.3 × 1017, 1.8 × 1017, 4.1 × 1017 cm-3, respectively. No significant difference of the breakdown characteristics between n-type and p-type voltage-blocking layers was observed. These results are consistent with numerical simulations using impact ionization coefficients (IICs) in GaN reported in our previous studies.

DOI： 10.1109/LED.2021.3125328

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Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient Reviewed

Sumida, K; Hirukawa, K; Sakurai, H; Sierakowski, K; Horita, M; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS Vol. 14 ( 12 ) 2021.12

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We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

DOI： 10.35848/1882-0786/ac39b0

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Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy Reviewed

Aoshima, K; Horita, M; Suda, J

AIP ADVANCES Vol. 11 ( 11 ) 2021.11

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Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.

DOI： 10.1063/5.0073747

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Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed

Sakurai, H; Narita, T; Kataoka, K; Hirukawa, K; Sumida, K; Yamada, S; Sierakowski, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

APPLIED PHYSICS EXPRESS Vol. 14 ( 11 ) 2021.11

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The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5-1.0, whereas the donor-acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface.

DOI： 10.35848/1882-0786/ac2ae7

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Investigation of point defects in GaN for the realization of high performance GaN vertical power devices Reviewed

SUDA Jun, HORITA Masahiro, KANEGAE Kazutaka

Oyo Buturi Vol. 90 ( 10 ) page： 628 - 631 2021.10

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Language：Japanese Publisher：The Japan Society of Applied Physics

Fundamental knowledge of point defects is essential for developing epitaxial growth, device processes and device design and characterization. However, the knowledge with regard to GaN is quite limited compared to Si and GaAs. The authors have carried out an extensive investigation of point defects in GaN by using deep-level transient spectroscopy (DLTS). In this paper, the origin of the E3 trap, the development of quantitative measurement techniques for carbon-related hole traps in GaN by using sub-bandgap photoexcitation and studies of nitrogen-displacement-related point defects (nitrogen vacancy and interstitial) intentionally formed by electron beam irradiation are reviewed.

DOI： 10.11470/oubutsu.90.10_628

CiNii Research
Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy Reviewed

Kanegae, K; Okuda, T; Horita, M; Suda, J; Kimoto, T

JOURNAL OF APPLIED PHYSICS Vol. 130 ( 10 ) 2021.9

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Electron traps generated during the reactive ion etching (RIE) process in n-type 4H-SiC are investigated using the deep-level transient spectroscopy technique and isothermal capacitance transient spectroscopy (ICTS) technique. Two electron traps of the Z1/2 center are detected in the RIE-etched sample by ICTS measurement at 300 K. A method is proposed to determine the depth profiles of the electron traps that are localized near the etched surface, whereby a depth profile is extracted from the dependence of averaged trap density on the depletion layer width. An exponential distribution is assumed as the depth profile of the electron traps generated during the RIE process. The extracted depth profile was confirmed to be consistent with that determined by the double-correlation method. An appropriate function for the depth profile of carrier traps is assumed and the dependence of the averaged trap density on the depletion layer width is analyzed, which enables the extraction of a depth profile that has both higher depth resolution and higher resolution in the carrier trap density with the proposed method than that with the double-correlation method.

DOI： 10.1063/5.0059588

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Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy Reviewed

Kanegae, K; Narita, T; Tomita, K; Kachi, T; Horita, M; Kimoto, T; Suda, J

APPLIED PHYSICS EXPRESS Vol. 14 ( 9 ) 2021.9

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The ratio of the photoionization cross sections (σo/n σ o/p) of carbon substituting at the nitrogen site [CN (0/-)] in n-type GaN, which is detected as a hole trap H1 (EV + 0.85 eV) under sub-bandgap-light irradiation (390 nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p+-n junction diode, whereby the hole occupancy ratio (fT) was obtained. Analysis of the dependence of fT on the temperature gave σo/n σ o/p of 3.0 was then used to estimate the charge state of CN (0/-) under sub-bandgap-light irradiation.

DOI： 10.35848/1882-0786/ac16ba

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Impact ionization coefficients and critical electric field in GaN Reviewed

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

JOURNAL OF APPLIED PHYSICS Vol. 129 ( 18 ) 2021.5

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Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p-n junction diode are experimentally investigated at 223-373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p--n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz-Keldysh effect in the high electric field region (near the p-n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the temperature dependences of the impact ionization coefficients of electrons and holes in GaN are extracted and formulated by the Okuto-Crowell model. The ideal breakdown voltage and the critical electric field for GaN p-n junctions of varying doping concentration are simulated using the obtained impact ionization coefficients, and their temperature dependence and conduction-type dependence were discussed. The simulated breakdown characteristics show good agreement with data reported previously, suggesting the high accuracy of the impact ionization coefficients obtained in this study.

DOI： 10.1063/5.0050793

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Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing Reviewed

Hirukawa, K; Sumida, K; Sakurai, H; Fujikura, H; Horita, M; Otoki, Y; Sierakowski, K; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS Vol. 14 ( 5 ) 2021.5

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Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573-1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.

DOI： 10.35848/1882-0786/abf4f3

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Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors Reviewed

Ito Kenji, Tomita Kazuyoshi, Kikuta Daigo, Horita Masahiro, Narita Tetsuo

Journal of Applied Physics Vol. 129 ( 8 ) 2021.2

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DOI： 10.1063/5.0040700

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Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate Reviewed

Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

Applied Physics Letters Vol. 118 ( 1 ) 2021.1

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DOI： 10.1063/5.0035235

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Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing Reviewed

Aoshima Keito, Horita Masahiro, Suda Jun, Hashizume Tamotsu

Applied Physics Express Vol. 14 ( 1 ) 2021.1

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DOI： 10.35848/1882-0786/abd71a

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Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

Applied Physics Letters Vol. 117 ( 15 ) 2020.10

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DOI： 10.1063/5.0027789

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Why do electron traps atE(C)-0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? Reviewed

Narita Tetsuo, Horita Masahiro, Tomita Kazuyoshi, Kachi Tetsu, Suda Jun

Japanese Journal of Applied Physics Vol. 59 ( 10 ) 2020.10

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DOI： 10.35848/1347-4065/abb9ca

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Progress on and challenges of p-type formation for GaN power devices Reviewed

Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka

Journal of Applied Physics Vol. 128 ( 9 ) 2020.9

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DOI： 10.1063/5.0022198

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Impacts of high temperature annealing above 1400°C under N<inf>2</inf>overpressure to activate acceptors in Mg-implanted GaN Reviewed

Sakurai H., Narita T., Hirukawa K., Yamada S., Koura A., Kataoka K., Horita M., Ikarashi N., Bockowski M., Suda J., Kachi T.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Vol. 2020-September page： 321 - 324 2020.9

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In this study, we clarify the impact of annealing pressure and temperature of the ultra-high-pressure annealing (UHPA) as a post-implantation-annealing (PIA) on the acceptor activation for Mg-ions-implanted GaN samples. The pressure to prevent the thermal decomposition is absolutely determined by the equilibrium N2 partial pressure in the phase diagram of GaN-Ga-N2 system, so that the pressure below the critical pressure always leads to the serious surface decomposition of GaN. In low temperature cathodoluminescence examinations, the samples processed at 1400°C or above exhibited more intense emissions in the near band edge and donor-acceptor pair band with a suppression of green luminescence related to point defects. Temperature dependent Hall-effect measurement was allowed for the UHPA samples annealed at 1400°C or above, whereas free holes were not observed for the 1300°C-UHPA. Moreover, the acceptor concentrations (Na) for samples annealed at 1400°C or above were close to Mg concentrations. We thus revealed the key process parameters in UHPA, which is at more than 1400°C under the N2 overpressure exceeding the equilibrium partial pressure. These findings can play as a key role in the selective area doping using UHPA.

DOI： 10.1109/ISPSD46842.2020.9170174

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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Reviewed

Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

Applied Physics Express Vol. 13 ( 8 ) 2020.8

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Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy Reviewed

Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

Applied Physics Express Vol. 13 ( 7 ) 2020.7

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Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN Reviewed

Kanegae K.

Japanese Journal of Applied Physics Vol. 59 ( SG ) 2020.4

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DOI： 10.35848/1347-4065/ab6863

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Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior Reviewed

Aoshima Keito, Kanegae Kazutaka, Horita Masahiro, Suda Jun

AIP Advances Vol. 10 ( 4 ) 2020.4

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DOI： 10.1063/1.5144158

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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed

Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu

Japanese Journal of Applied Physics Vol. 59 ( SA ) 2020.1

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DOI： 10.7567/1347-4065/ab4610

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Impacts of high temperature annealing above 1400 degrees C under N-2 overpressure to activate acceptors in Mg-implanted GaN Reviewed

Sakurai Hideki, Narita Tetsuo, Hirukawa Kazufumi, Yamada Shinji, Koura Akihiko, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020) page： 321 - 324 2020

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Impact Ionization Coefficients in GaN Measured by Above- and Sub-E<inf>g</inf> Illuminations for p-/n+ Junction Reviewed

Maeda T.

Technical Digest - International Electron Devices Meeting, IEDM Vol. 2019-December 2019.12

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DOI： 10.1109/IEDM19573.2019.8993438

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing Reviewed

Sakurai Hideki, Omori Masato, Yamada Shinji, Furukawa Yukihiro, Suzuki Hideo, Narita Tetsuo, Kataoka Keita, Horita Masahiro, Bockowski Michal, Suda Jun, Kachi Tetsu

Applied Physics Letters Vol. 115 ( 14 ) 2019.9

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DOI： 10.1063/1.5116866

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Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Applied Physics Letters Vol. 115 ( 14 ) 2019.9

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DOI： 10.1063/1.5114844

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Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along the < 11(2)over-bar0 > direction Reviewed

Maeda Takuya, Chi Xilun, Tanaka Hajime, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

Japanese Journal of Applied Physics Vol. 58 ( 9 ) 2019.9

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DOI： 10.7567/1347-4065/ab3873

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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy Reviewed

Kanegae Kazutaka, Fujikura Hajime, Otoki Yohei, Konno Taichiro, Yoshida Takehiro, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

Applied Physics Letters Vol. 115 ( 1 ) 2019.7

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DOI： 10.1063/1.5098965

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Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Japanese Journal of Applied Physics Vol. 58 ( SC ) 2019.6

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DOI： 10.7567/1347-4065/ab07ad

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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

IEEE Electron Device Letters Vol. 40 ( 6 ) page： 941 - 944 2019.6

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DOI： 10.1109/LED.2019.2912395

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Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing Reviewed

Sakurai H.

19th International Workshop on Junction Technology, IWJT 2019 2019

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DOI： 10.23919/iwjt.2019.8802621

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Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect Reviewed

Maeda T.

Proceedings of the 2019 31st International Symposium on Power Semiconductor Devices and ICs Vol. 2019-May page： 59 - 62 2019

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DOI： 10.1109/ispsd.2019.8757676

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Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ Junction

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2019

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The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Narita Tetsuo, Tomita Kazuyoshi, Tokuda Yutaka, Kogiso Tatsuya, Horita Masahiro, Kachi Tetsu

JOURNAL OF APPLIED PHYSICS Vol. 124 ( 21 ) 2018.12

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DOI： 10.1063/1.5057373

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Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage

Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

APPLIED PHYSICS EXPRESS Vol. 11 ( 9 ) 2018.9

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DOI： 10.7567/APEX.11.091302

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Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express Vol. 11 ( 7 ) 2018.7

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We propose an analysis method for the accurate estimation of the hole trap (H1, EV + 0.85 eV) concentration in n-type GaN via minority carrier transient spectroscopy (MCTS). The proposed method considers both the hole occupation during a filling (current injection) period and the quick carrier recombination via the hole traps near the depletion layer edge immediately after a reverse bias is applied. The reverse bias voltage dependence of the MCTS spectrum indicates that an accurate trap concentration, as well as the hole diffusion length and electron capture cross section of the hole trap, can be determined.

DOI： 10.7567/APEX.11.071002

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Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies

Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7

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n-Type GaN bulk substrates with carrier concentrations (n) of 1016-1020 cm%3 were characterized by Raman scattering (350-5000 cm-1) and infrared reflectance (400-5000 cm%1) spectroscopies. Experimental spectra were fitted with the curves calculated from the dielectric function and carrier concentration and mobility of the GaN bulk. The obtained values agree well with the values from Hall-effect measurements for n of 1016-1019 cm-3 in Raman scattering measurements and for n of 1018-1020 cm-3 in infrared reflectance measurements.

DOI： 10.7567/JJAP.57.070309

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Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Takuya Maeda, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

Applied Physics Letters Vol. 112 ( 25 ) 2018.6

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Photocurrent induced by sub-bandgap light absorption due to the Franz-Keldysh effect was observed in GaN p-n junction diodes under a high reverse bias voltage. The photocurrent increased with the reverse bias voltage and the increase was found to be more significant as the wavelength approached the absorption edge of GaN. The photocurrent was calculated with consideration of light absorption induced by the Franz-Keldysh effect in the depletion layer. The calculated curves showed excellent agreement with the experimental curves. The photocurrent also increased with an increase in temperature and this could be quantitatively explained by the red-shift of the GaN absorption edge with the increase in temperature.

DOI： 10.1063/1.5031215

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Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Naoki Sawada, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express Vol. 11 ( 4 ) 2018.4

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The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Halleffect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 1016 cm3 can be explained by residual carbon and electron trap E3 (EC % 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect.

DOI： 10.7567/APEX.11.041001

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Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Reviewed

2018 IEEE International Electron Devices Meeting (IEDM) 2018

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Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita M., Suda J.

IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai page： 86 - 87 2017.7

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Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm-3 level. The electron mobility is mainly limited by ionized impurity scattering or polar optical phonon scattering in the temperature less or higher than 200 K, respectively. For p-GaN, lightly Mg doping of mid 1016 cm-3 was achieved, which shows the donor concentration of 3.2×1016 cm-3 and the mobility of 31 cm2/Vs at 300 K.

DOI： 10.1109/IMFEDK.2017.7998055

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Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5

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The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO(2)LA) at the optimum fluence of 20mJ/cm(2), the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 +/- 1.2 cm(2)V(-1)s(-1), a threshold voltage of 9.8 +/- 0.2 V, and a subthreshold swing of 0.76 +/- 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.56.056503

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Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

APPLIED PHYSICS EXPRESS Vol. 10 ( 5 ) 2017.5

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The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance-voltage, current-voltage, and internal photoemission measurements in the range of 223-573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was -(1.7-2.3) x 10(-4) eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/APEX.10.051002

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Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

Masahiro Horita, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo, Tokio Takahashi, Mitsuaki Shimizu, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 3 ) 2017.3

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Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 x 10(16)cm(-3) (lightly doped) to 3.8 x 10(19)cm(-3) (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 x 10(6)cm(-2) measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 x 10(16)cm(-3) and the donor concentration of 3.2 x 10(16)cm(-3) were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220meV. The hole mobilities of 86, 31, 14cm(2)V(-1) 1 s(-1) 1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.56.031001

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Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita Masahiro, Suda Jun

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) page： 86 - 87 2017

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Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates

Horita Masahiro, Suda Jun

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) page： 86-87 2017

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MISC 61

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5

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DOI： 10.7567/JJAP.56.056503

Web of Science
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

APPLIED PHYSICS EXPRESS Vol. 10 ( 5 ) 2017.5

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DOI： 10.7567/APEX.10.051002

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Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

Horita Masahiro, Takashima Shinya, Tanaka Ryo, Matsuyama Hideaki, Ueno Katsunori, Edo Masaharu, Takahashi Tokio, Shimizu Mitsuaki, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 3 ) 2017.3

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DOI： 10.7567/JJAP.56.031001

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Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage (vol 9, 091002, 2016) Reviewed

Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Horita Masahiro, Suda Jun

APPLIED PHYSICS EXPRESS Vol. 9 ( 10 ) 2016.10

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DOI： 10.7567/APEX.9.109201

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Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage Reviewed

Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Horita Masahiro, Suda Jun

APPLIED PHYSICS EXPRESS Vol. 9 ( 9 ) 2016.9

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DOI： 10.7567/APEX.9.091002

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Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC(11(2)over-bar0) heterojunction Reviewed

Maejima Naoyuki, Horita Masahiro, Matsui Hirosuke, Matsushita Tomohiro, Daimon Hiroshi, Matsui Fumihiko

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 8 ) 2016.8

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DOI： 10.7567/JJAP.55.085701

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Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation Reviewed

Kulchaisit Chaiyanan, Ishikawa Yasuaki, Fujii Mami N., Yamazaki Haruka, Bermundo Juan Paolo Soria, Ishikawa Satoru, Miyasako Takaaki, Katsui Hiromitsu, Tanaka Kei, Hamada Ken-ichi, Horita Masahiro, Uraoka Yukiharu

JOURNAL OF DISPLAY TECHNOLOGY Vol. 12 ( 3 ) 2016.3

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DOI： 10.1109/JDT.2015.2475127

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High Pressures Water Vapor Annealing for Atomic-Layer-Deposited Al2O3 on GaN Reviewed

Yoshitugu Koji, Horita Masahiro, Uenuma Mustunori, Ishikawa Yasuaki, Uraoka Yukiharu

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) page： . 2016

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Characterization of N-Type and P-Type GaN Layers Grown on Free-Standing GaN Substrates Reviewed

Suda Jun, Horita Masahiro

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) page： . 2016

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing Reviewed

Asubar Joel T., Kobayashi Yohei, Yoshitsugu Koji, Yatabe Zenji, Tokuda Hirokuni, Horita Masahiro, Uraoka Yukiharu, Hashizume Tamotsu, Kuzuhara Masaaki

IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 62 ( 8 ) page： 2423-2428 2015.8

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DOI： 10.1109/TED.2015.2440442

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Thermo-stable carbon nanotube-TiO2 nanocompsite as electron highways in dye-sensitized solar cell produced by bio-nano-process Reviewed

Inoue Ippei, Yamauchi Hirofumi, Okamoto Naofumi, Toyoda Kenichi, Horita Masahiro, Ishikawa Yasuaki, Yasueda Hisashi, Uraoka Yukiharu, Yamashita Ichiro

NANOTECHNOLOGY Vol. 26 ( 28 ) 2015.7

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DOI： 10.1088/0957-4484/26/28/285601

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Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides Reviewed

Kamitake Hiroki, Uenuma Mutsunori, Okamoto Naofumi, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichro, Uraoka Yukiharu

NANOTECHNOLOGY Vol. 26 ( 19 ) 2015.5

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DOI： 10.1088/0957-4484/26/19/195201

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Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Reviewed

Horita Masahiro, Takao Toru, Nieda Yoshiaki, Ishikawa Yasuaki, Sasaki Nobuo, Uraoka Yukiharu

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) page： 237-240 2015

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Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage Reviewed

Kise Kahori, Tomai Shigekazu, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Fujii Mami, Ishikawa Yasuaki, Uraoka Yukiharu

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) page： 249-251 2015

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Analysis of printed silver electrode on amorphous indium gallium zinc oxide Reviewed

Ueoka Yoshihiro, Nishibayashi Takahiro, Ishikawa Yasuaki, Yamazaki Haruka, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 4 ) 2014.4

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DOI： 10.7567/JJAP.53.04EB03

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Effect of contact material on amorphous InGaZnO thin-film transistor characteristics Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 3 ) 2014.3

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DOI： 10.7567/JJAP.53.03CC04

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4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) Reviewed

Horita Masahiro, Noborio Masato, Kimoto Tsunenobu, Suda Jun

IEEE ELECTRON DEVICE LETTERS Vol. 35 ( 3 ) page： 339-341 2014.3

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DOI： 10.1109/LED.2014.2299557

Web of Science
Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress Reviewed

Kise Kahori, Fujii Mami, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) page： . 2014

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Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Fujii Mami, Horita Masahiro, Uraoka Yukiharu

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 3 ( 9 ) page： Q3001-Q3004 2014

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DOI： 10.1149/2.001409jss

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Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs Reviewed

Fujii Mami N., Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol. 3 ( 9 ) page： Q3050-Q3053 2014

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DOI： 10.1149/2.011409jss

Web of Science
Reliability of Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer Reviewed

Kulchaisit Chaiyanan, Fujii Mami, Ueoka Yoshihiro, Bermundo Juan Paolo, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) page： . 2014

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Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

JOURNAL OF CRYSTAL GROWTH Vol. 382 page： 31-35 2013.11

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DOI： 10.1016/j.jcrysgro.2013.07.032

Web of Science
Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature Reviewed

Machida Emi, Horita Masahiro, Yamasaki Koji, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

JOURNAL OF DISPLAY TECHNOLOGY Vol. 9 ( 9 ) page： 741-746 2013.9

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DOI： 10.1109/JDT.2012.2236883

Web of Science
Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JOURNAL OF DISPLAY TECHNOLOGY Vol. 9 ( 9 ) page： 694-698 2013.9

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DOI： 10.1109/JDT.2012.2213237

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Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene Reviewed

Mulyana Yana, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Koh Shinji

APPLIED PHYSICS LETTERS Vol. 103 ( 6 ) 2013.8

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DOI： 10.1063/1.4818329

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Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Reviewed

Fujii Mami, Ishikawa Yasuaki, Ishihara Ryoichi, van der Cingel Johan, Mofrad Mohammad R. T., Horita Masahiro, Uraoka Yukiharu

APPLIED PHYSICS LETTERS Vol. 102 ( 12 ) 2013.3

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DOI： 10.1063/1.4798519

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Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices Reviewed

Araki Shinji, Ishikawa Yasuaki, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 3 ) 2013.3

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DOI： 10.7567/JJAP.52.03BA02

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Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Reviewed

Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

APPLIED PHYSICS LETTERS Vol. 102 ( 5 ) 2013.2

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DOI： 10.1063/1.4790619

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Forming SiO2 Thin Film by CO2 Laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film Reviewed

Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS page： 163-166 2013

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Memristive nanoparticles formed using a biotemplate Reviewed

Uenuma Mutsunori, Ban Takahiko, Okamoto Naofumi, Zheng Bin, Kakihara Yasuhiro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

RSC ADVANCES Vol. 3 ( 39 ) page： 18044-18048 2013

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DOI： 10.1039/c3ra42392a

Web of Science
Forming of SiO2 Film by Spin-On Glass and CO2 Laser Annealing for Gate Insulator of Polycrystalline Silicon Thin Film Transistors Reviewed

Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) page： . 2013

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Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition Reviewed

Yoshitsugu Koji, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 Vol. 10 ( 11 ) page： 1426-1429 2013

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DOI： 10.1002/pssc.201300273

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Thermal distribution in amorphous InSnZnO thin-film transistor Reviewed

Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 Vol. 10 ( 11 ) page： 1561-1564 2013

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DOI： 10.1002/pssc.201300253

Web of Science
Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS page： 37-38 2013

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Thermal Degradation and Theoretical Analysis of Amorphous Oxide Thin-Film Transistor Reviewed

Urakawa Satoshi, Tomai Shigekazu, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Kimura Mutsumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS page： 125-128 2013

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Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

APPLIED PHYSICS LETTERS Vol. 101 ( 25 ) 2012.12

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DOI： 10.1063/1.4772513

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Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method Reviewed

Doe Takahiro, Ishikawa Yasuaki, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 3 ) 2012.3

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DOI： 10.1143/JJAP.51.03CC02

Web of Science
Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing Reviewed

Yamasaki Koji, Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 3 ) 2012.3

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DOI： 10.1143/JJAP.51.03CA03

Web of Science
Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles Reviewed

Uenuma Mutsunori, Zheng Bin, Kawano Kentaro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

APPLIED PHYSICS LETTERS Vol. 100 ( 8 ) 2012.2

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DOI： 10.1063/1.3688053

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Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Imazawa Takanori, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

APPLIED SURFACE SCIENCE Vol. 258 ( 8 ) page： 3410-3414 2012.2

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DOI： 10.1016/j.apsusc.2011.11.076

Web of Science
Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Tani Mai, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 ( 2 ) 2012.2

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DOI： 10.1143/JJAP.51.02BF04

Web of Science
Analysis of Electronic Structural Change in a-InGaZnO by High Pressure Water Vapor Annealing Reviewed

Ueoka Yoshihiro, Mejima Naoyuki, Matsui Hirosuke, Matsui Fumihiko, Morita Makoto, Kitagawa Satoshi, Fujita Masayoshi, Yasuda Kaoru, Yamazaki Haruka, Urakawa Satoshi, Horita Masahiro, Ishikawa Yasuaki, Daimon Hiroshi, Uraoka Yukiharu

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 Vol. 19 page： 887-890 2012

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Web of Science
Crystallization to Polycrystalline Silicon Films by Underwater Laser Annealing and Its Application to Thin Film Transistors Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS page： 111-114 2012

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Web of Science
Effects of Gate Insulator on Thin Film Transistor with ZnO Channel Layer Deposited by Plasma Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS page： 179-182 2012

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Web of Science
Cu nanoparticle induced crystallization of amorphous Ge film using ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS page： 227-230 2012

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Web of Science
Fabrication of Zinc Oxide Nano-patterns by Quick Gel-nanoimprint Process toward Optical Switching Devices Reviewed

Araki Shinji, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS page： 29-32 2012

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Web of Science
Super Low-Temperature Formation of Polycrystalline Silicon Films on Plastic Substrates by Underwater Laser Annealing Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Okuyama Tetsuo, Ikenoue Hiroshi

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1 Vol. 19 page： 303-306 2012

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Web of Science
Unique Phenomenon in Degradation of Amorphous In2O3-Ga2O3-ZnO Thin-Film Transistors under Dynamic Stress Reviewed

Fujii Mami, Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

APPLIED PHYSICS EXPRESS Vol. 4 ( 10 ) 2011.10

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DOI： 10.1143/APEX.4.104103

Web of Science
Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy Reviewed

Ueta Shunsaku, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 208 ( 7 ) page： 1498-1500 2011.7

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DOI： 10.1002/pssa.201001033

Web of Science
Resistive random access memory utilizing ferritin protein with Pt nanoparticles Reviewed

Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Okamoto Naofumi, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

NANOTECHNOLOGY Vol. 22 ( 21 ) 2011.5

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DOI： 10.1088/0957-4484/22/21/215201

Web of Science
ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 50 ( 4 ) 2011.4

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DOI： 10.1143/JJAP.50.04DF05

Web of Science
Resistive Memory Utilizing Ferritin Protein with Nano Particle Reviewed

Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Vol. 470 page： 92-97 2011

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DOI： 10.4028/www.scientific.net/KEM.470.92

Web of Science
Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS EXPRESS Vol. 3 ( 5 ) 2010

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DOI： 10.1143/APEX.3.051001

Web of Science
Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 ( 4 ) 2010

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DOI： 10.1143/JJAP.49.04DF19

Web of Science
Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS EXPRESS Vol. 2 ( 9 ) 2009.9

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DOI： 10.1143/APEX.2.091003

Web of Science
Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Reviewed

Okumura Hironori, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 206 ( 6 ) page： 1187-1189 2009.6

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DOI： 10.1002/pssa.200880934

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Polytype Replication in Heteroepitaxial Growth of Nonpolar AlN on SiC Reviewed

Suda Jun, Horita Masahiro

MRS BULLETIN Vol. 34 ( 5 ) page： 348-352 2009.5

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Web of Science
Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47 ( 11 ) page： 8388-8390 2008.11

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DOI： 10.1143/JJAP.47.8388

Web of Science
Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS LETTERS Vol. 93 ( 8 ) 2008.8

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DOI： 10.1063/1.2976559

Web of Science
High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy Reviewed

Horita Masahiro, Suda Jun, Kimoto Tsunenobu

APPLIED PHYSICS LETTERS Vol. 89 ( 11 ) 2006.9

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DOI： 10.1063/1.2352713

Web of Science
Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy Reviewed

Armitage Rob, Horita Masahiro, Kimoto Tsunenobu

GaN, AIN, InN and Related Materials Vol. 892 page： 705-710 2006

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To the head of MISC.▲

Presentations 158

ホモエピタキシャル成長n 型GaNにおいて電子線照射によりE_C − 1 eV 付近に形成される窒素変位関連トラップの熱アニール挙動

遠藤彗，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会 2024.3.24

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Event date： 2024.3

Language：Japanese Presentation type：Oral presentation (general)
酸素イオン注入n型GaNで観測される実効ドナー密度変動と長い捕獲時定数を持つトラップの関係性

林慶祐，堀田昌宏，田中亮，高島信也，上野勝典，須田淳

第71回応用物理学会春季学術講演会 2024.3.24

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Event date： 2024.3

Language：Japanese Presentation type：Oral presentation (general)
ホモエピタキシャル成長n型GaN中の格子間窒素が形成する2つの準位の特定

遠藤彗，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会 2024.3.24

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Event date： 2024.3

Language：Japanese Presentation type：Oral presentation (general)
Characterization of nitrogen-displacement-related traps in GaN Invited International conference

Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors 2023.11.14

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Event date： 2023.11

Language：English Presentation type：Oral presentation (invited, special)
Hall-effect Measurement of Homoepitaxial N-type GaN with Nitrogen-displacement-related Point Defects Formed by Electron Beam Irradiation International conference

Kojima, C. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors 2023.11.17

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Event date： 2023.11

Language：English Presentation type：Oral presentation (general)
Evaluation of recombination centers originating from nitrogen-displacement-related defects in homoepitaxial n-type and p-type GaN International conference

Endo, M. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors 2023.11.17

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Event date： 2023.11

Language：English Presentation type：Oral presentation (general)
[講演奨励賞受賞記念講演] 電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN中の再結合中心の評価 Invited

遠藤彗，堀田昌宏，須田淳

第84回応用物理学会秋季学術講演会 2023.9.22

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Event date： 2023.9

Language：Japanese Presentation type：Oral presentation (invited, special)
Thermal annealing behavior of nitrogen-displacement-related defects in homoepitaxial n-type GaN International conference

Endo, M., Horita, M., Suda, J.

The 32nd International Conference on Defects in Semiconductors 2023.9.14

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Event date： 2023.9

Language：English Presentation type：Oral presentation (general)
ホモエピタキシャル成長GaN 中の窒素原子変位に関連した再結合中心の評価

遠藤彗，堀田昌宏，須田淳

第15回ナノ構造・エピタキシャル成長講演会 2023.6.16

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Event date： 2023.6

Language：Japanese Presentation type：Poster presentation
GaN中のN変位関連欠陥が形成するトラップの評価 Invited

堀田昌宏，須田淳

第15回ナノ構造・エピタキシャル成長講演会 2023.6.15

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Event date： 2023.6

Language：Japanese Presentation type：Oral presentation (invited, special)
電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN p-n接合ダイオードの再結合電流解析

遠藤彗，堀田昌宏，須田淳

第70回応用物理学会春季学術講演会 2023.3.17

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (general)
GaN pn接合の容量過渡分光法においてフィリングパルス0 V印加にもかかわらず観測される少数キャリアシグナルの起源

清水威杜，大橋拓斗，冨田一義，堀田昌宏，須田淳

第70回応用物理学会春季学術講演会 2023.3.17

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (general)
137 keVの電子線照射で意図的に窒素関連欠陥準位を導入したn型GaNのホール効果測定

小島千寛，堀田昌宏，須田淳

第70回応用物理学会春季学術講演会 2023.3.17

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (general)
GaN中点欠陥が形成するトラップの評価 Invited

堀田昌宏，須田淳

ワイドギャップ半導体学会第9回研究会 2022.12.16

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Event date： 2022.12

Language：Japanese Presentation type：Oral presentation (invited, special)
Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN International conference

M. Endo, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.12

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
N極性面上低温成膜Ge添加GaNスパッタ膜の電気的特性評価

遠藤彗，堀田昌宏，須田淳

第83回応用物理学会秋季学術講演会 2022.9.23

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)
Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

Meguru Endo, Masahiro Horita, Jun Suda

2021.9.11

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)
Correlation between concentrations of iron and EC – 0.6 eV electron trap in n-type GaN grown by MOVPE International conference

M. Horita, T. Narita, K. Kachi, and J. Suda

20th International Conference on Metalorganic Vapor Phase Epitaxy 2022.7.14

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Event date： 2022.7

Language：English Presentation type：Poster presentation
Characterization of a photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

Meguru Endo, Masahiro Horita, Jun Suda

2022.3.23

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Event date： 2022.3 - 3033.3

Presentation type：Oral presentation (general)
Investigation of Electron Traps in Homoepitaxial n-type GaN Grown by MOVPE International conference

Masahiro Horita and Jun Suda

International Conference on Materials and Systems for Sustainability 2021 2021.11.6

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Event date： 2021.11

Language：English Presentation type：Oral presentation (general)
Nitrogen-displacement-related Hole Traps in N-type GaN with Electron Beam Irradiations in the Energy Range from 100 to 400 keV International conference

Meguru Endo, Masahiro Horita, Kazutaka Kanegae, and Jun Suda

International Conference on Materials and Systems for Sustainability 2021

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Event date： 2021.11

Language：English Presentation type：Oral presentation (general)
Nitrogen-displacement-related hole traps in MOVPE-grown homoepitaxial p-type GaN

Meguru Endo, Masahiro Horita, Jun Suda

The 40th Electronic Materials Symposium 2021.10.11

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Event date： 2021.10

Language：English Presentation type：Poster presentation
Nitrogen-displacement-related hole traps introduced by electron beam irradiations in MOVPE-grown homoepitaxial p-type GaN International conference

Meguru Endo, Masahiro Horita, and Jun Suda

31st International Conference on Defects in Semiconductors 2021.7.26 31st International Conference on Defects in Semiconductors Conference Committees

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Event date： 2021.7

Language：English Presentation type：Poster presentation

Venue：University of Oslo Country：Norway
酸素イオン注入によりn型GaN中に形成される電子トラップ

柴田優一，堀田昌宏，田中亮，高島信也，上野勝典，須田淳

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
Hole Traps Introduced by Electron Beam Irradiation in Homoepitaxial n-type GaN and Its Irradiation Energy Dependence

M. Endo, M. Horita, K. Kanegae, J. Suda

第39回電子材料シンポジウム

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Event date： 2020.10

Language：Japanese Presentation type：Oral presentation (general)
MOVPE成長n型GaNに存在するE3トラップの起源検討

堀田昌宏，成田哲生，加地徹，須田淳

第81回応用物理学会秋季学術講演会

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Event date： 2020.9

Language：Japanese Presentation type：Oral presentation (general)
電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの照射エネルギー依存性

遠藤彗，鐘ヶ江一孝，堀田昌宏，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
Nitrogen and gallium displacement related deep levels introduced by electron-beam irradiation in MOVPE-grown homoepitaxial n-type GaN

M. Horita, J. Suda

第38回電子材料シンポジウム

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Event date： 2019.10

Language：Japanese Presentation type：Oral presentation (general)
Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

M. Endo, K. Kanegae, M. Horita, J. Suda

第38回電子材料シンポジウム

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Event date： 2019.10

Language：Japanese Presentation type：Oral presentation (general)
電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの評価

遠藤彗，鐘ヶ江一孝，堀田昌宏，須田淳

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の低温における挙動

遠藤彗, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
GaN -MOSFETのHall測定

上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
ホモエピタキシャル成長n型GaN中に2 MeV電子線照射により形成される深い準位

堀田昌宏, 成田哲生, 加地徹, 上杉勉, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
DLTSおよびHall測定による GaNエピ層の欠陥準位評価 Invited

堀田昌宏, 須田淳

第6回パワーデバイス用Siおよび関連半導体材料に関する研究会

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Event date： 2018.12

Language：Japanese Presentation type：Oral presentation (invited, special)
Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN Invited International conference

M. Horita, T. Narita, T. Kachi, T. Uesugi, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (general)
Energy dependence of deep level formation by electron-beam irradiation in homoepitaxial n-type GaN

M. Horita, J. Suda

第37回電子材料シンポジウム

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Event date： 2018.10

Language：Japanese Presentation type：Oral presentation (general)
電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の形成エネルギーしきい値

堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
マルチウェハリアクタによって4インチサファイア基板上にMOVPE成長した低ドープn型GaNの実効ドナー密度分布

坂尾佳祐, 堀田昌宏, 須田淳, 朴冠錫, 山岡優哉, 矢野良樹, 松本功

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
Si-doped GaN Growth as a Drift Layer of Vertical Power Devices by Using Production Scale Metalorganic Chemical Vapor Deposition International conference

G. Piao, Y. Yano, Y. Yamaoka, T. Tabuchi, K. Matsumoto, K. Sakao, K. Kanegae, M. Horita, J. Suda

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Event date： 2018.7

Language：English Presentation type：Oral presentation (general)
Mgイオン注入p-GaNにおけるNイオン連続注入の補償ドナー濃度低減効果

角田健輔，片岡恵太，成田哲生，堀田昌宏，加地徹，須田淳

第71回応用物理学会春季学術講演会 2024.3.25

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Event date： 2024.3

Language：Japanese Presentation type：Oral presentation (general)
Mgチャネリングイオン注入および超高圧アニールを用いて作製した縦型GaN JBSダイオード

北川和輝，Maciej Matys，上杉勉，加地徹，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会 2024.3.25

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Event date： 2024.3

Language：Japanese Presentation type：Oral presentation (general)
プラズマ支援原子層堆積法で形成したAlN界面層を用いたAlSiO/p-GaN MOSFETの分極制御 Invited

伊藤健治，成田哲生，井口紘子，岩崎四郎，菊田大悟，狩野絵美，五十嵐信行，冨田一義，堀田昌宏，須田淳

シリコン材料・デバイス研究会（SDM） 2024.1.31

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Event date： 2024.1

Language：Japanese Presentation type：Oral presentation (invited, special)
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition International conference

Ito., K, Narita, T., Iguchi, H., Iwasaki, S., Kikuta, D., Kano, E., Ikarashi, N., Tomita, K.,Horita, M., Suda, J.

69th Annual IEEE International Electron Devices Meeting 2023.12.9

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Event date： 2023.12

Language：English Presentation type：Oral presentation (general)
Establishment of reliability and high performance for an AlSiO/GaN MOSFET formed by ALD and post-deposition annealing Invited International conference

Narita, T., Ito, K., Kataoka, K., Tomita, K., Iguchi, H., Iwasaki, S., Kano, E., Ikarashi, N., Horita, M., Kikuta, D.

International Conference on Materials and Systems for Sustainability 2023 2023.12.2

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Event date： 2023.12

Language：English Presentation type：Oral presentation (invited, special)
Depth Analysis of Acceptor and Compensating Donor Concentrations in Mg-implanted p-GaN with Ultra-High-Pressure Annealing International conference

Sumida, K. , Horita, M. , Kachi, T. , Suda, J.

14th International Conference on Nitride Semiconductors 2023.11.14

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Event date： 2023.11

Language：English Presentation type：Oral presentation (general)
Annealing behavior of deep levels induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN International conference

Iguchi, H. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors 2023.11.16

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Event date： 2023.11

Language：English Presentation type：Poster presentation
超低濃度Siイオン注入を行ったn型GaNエピタキシャル層上に作製したショットキーバリアダイオードの電流-電圧特性

井口紘子，堀田昌宏，須田淳

第84回応用物理学会秋季学術講演会 2023.9.21

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Event date： 2023.9

Language：Japanese Presentation type：Poster presentation
Radiation-induced deep-level traps in homoepitaxial GaN layers Invited International conference

Suda, J., Aoshima, K., Horita, M.

The 32nd International Conference on Defects in Semiconductors 2023.9.11

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Event date： 2023.9

Language：English Presentation type：Oral presentation (invited, special)
GaNパワー半導体プロセスにおけるMOVPE成長特有の不純物の理解と制御 Invited

成田哲生，冨田一義，徳田豊，堀田昌宏，山田真嗣，五十嵐信行，加地徹

応用物理学会　結晶工学分科会　第159回研究会 2023.6.13

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Event date： 2023.6

Language：Japanese Presentation type：Oral presentation (invited, special)
縦型GaNパワーデバイスの高性能化に向けたMOS界面、イオン注入技術の進展と課題 Invited

成田哲生，伊藤健治，菊田大悟，冨田一義，堀田昌宏，Maciej Matys，五十嵐信行，Michal Bockowski，上殿明良，須田淳，加地徹

日本学術振興会R032産業イノベーションのための結晶成長委員会 2023.3.10

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (invited, special)
GaNパワーデバイスの特性に影響するエピ・基板の欠陥評価 Invited

成田哲生，長里喜隆，兼近将一，近藤健，上杉勉，冨田一義，池田智史，渡辺弘紀，庄司智幸，山口聡，木本康司，小嵜正芳，岡徹，小島淳，堀田昌宏，加地徹，須田淳

日本学術振興会結晶加工と評価技術第145委員会第178回研究会 2023.1.18

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Event date： 2023.1

Language：Japanese Presentation type：Oral presentation (invited, special)
Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN International conference

H. Iguchi, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.10

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Event date： 2022.10

Language：English Presentation type：Poster presentation
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap International conference

R. Tanaka, S. Takashima, K. Ueno, M. Edo, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.14

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Temperature Dependence of Impact Ionization Coefficients in GaN International conference

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.14

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Quantitative Relationship between Carbon Concentration and H1 Hole Trap Density in n-Type GaN Homoepitaxial Layers International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.14

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Correlation between non-ionizing energy loss and production rates of an electron trap at EC– (0.12-0.20) eV formed by various energetic particles in gallium nitride International conference

K. Aoshima, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.12

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Investigation of Annealing Conditions of Mg-implanted GaN by Ultra-High-Pressure Annealing for Further Reduction of Annealing Pressure International conference

K. Sumida, K. Hirukawa, H. Sakurai, K. Sierakowski, M. Horita, M. Bockowski, T. Kachi and J. Suda

International Workshop on Nitride Semiconductors 2022 2022.10.11

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Correlation between non-ionizing energy loss and production rates of an electron trap formed by various types of radiation in gallium nitride International conference

K. Aoshima, M. Horita, and J. Suda

The Radiation and Its Effects on Components and Systems Conference 2022 2022.10.4

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Event date： 2022.10

Language：English Presentation type：Oral presentation (general)
Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps International conference

K. Ito, K. Tomita, D. Kikuta, M. Horita, and T. Narita

2022 International Conference on Solid State Devices and Materials 2022.9.28

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Event date： 2022.9

Language：English Presentation type：Oral presentation (general)
SiC (0001), (11-20), (1-100) MOSFETにおけるHall移動度のボディ層濃度依存性 Invited

伊藤滉二，田中一，堀田昌宏，須田淳，木本恒暢

第83回応用物理学会秋季学術講演会 2022.9.21

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (invited, special)
超低濃度Siイオン注入GaNにおけるトラップ密度深さ方向分布のアニール温度依存性

井口紘子，堀田昌宏，須田淳

第83回応用物理学会秋季学術講演会 2022.9.23

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)
高エネルギー粒子線照射により窒化ガリウム中に形成される電子トラップの生成レートとNIELの相関

青島慶人，堀田昌宏，須田淳

第83回応用物理学会秋季学術講演会 2022.9.23

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)
様々なドーピング密度を有するGaN p+-nおよびp-n+接合ダイオードの絶縁破壊電界

前田拓也，成田哲生，山田真嗣，加地徹，木本恒暢，堀田昌宏，須田淳

第83回応用物理学会秋季学術講演会 2022.9.22

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)
High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies Invited International conference

T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda

14th Topical Workshop on Heterostructure Microelectronics 2022.8.30

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Event date： 2022.8 - 2022.9

Language：English Presentation type：Oral presentation (invited, special)
Why does the electron trap concentration at EC –0.6 eV have an inverse correlation with the carbon one in n-type GaN layers? International conference

T. Narita, M. Horita, K. Tomita, K. Kachi, and J. Suda

20th International Conference on Metalorganic Vapor Phase Epitaxy 2022.7.11

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Event date： 2022.7

Language：English Presentation type：Oral presentation (general)
Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

Hiroko Iguchi, Masahiro Horita, Jun Suda

2022.3.23

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Event date： 2022.3

Presentation type：Oral presentation (general)
Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

2022.3.24

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Event date： 2022.3

Presentation type：Oral presentation (general)
Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction mesa diodes

Takuto Ohashi, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda

2022.3.23

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Event date： 2022.3

Presentation type：Oral presentation (general)
AlSiOゲート酸化膜を用いたGaNパワーMOSFETの進展と課題 Invited

成田哲生, 伊藤健治, 菊田大悟, 冨田一義, 堀田昌宏, 加地徹

第27回電子デバイス界面テクノロジー研究会 2022.1.29

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Event date： 2022.1

Language：Japanese Presentation type：Oral presentation (invited, special)
Reduction of Temperature and Pressure in Ultra-High-Pressure Annealing for Activation of Mg-Implanted ptype GaN

The 8th Meeting on Advanced Power Semiconductors 2021.12.9

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Event date： 2021.12

Language：Japanese Presentation type：Poster presentation
Origin of Hysteresis in Reverse Current-Voltage Characteristics of GaN pn Junction Mesa Diodes

The 8th Meeting on Advanced Power Semiconductors 2021.12.9

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Event date： 2021.12

Language：Japanese Presentation type：Poster presentation
Dependence of Channel Mobility on Doping Concentration of p-body in Phosphorus-Treated SiC MOSFETs

The 8th Meeting on Advanced Power Semiconductors 2021.12.10

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Event date： 2021.12

Language：Japanese Presentation type：Poster presentation
Hole traps formed by gamma-ray irradiation in homoepitaxial p-type GaN International conference

Keito Aoshima, Masahiro Horita, and Jun Suda

International Conference on Materials and Systems for Sustainability 2021

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Event date： 2021.11

Language：English Presentation type：Poster presentation
Isothermal Annealing Study on Mg-implanted Homoepitaxial GaN International conference

Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Tetsu Kachi, Jun Suda

International Conference on Materials and Systems for Sustainability 2021

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Event date： 2021.11

Language：English Presentation type：Oral presentation (general)
Universal Mobility in SiC MOSFETs with Very Low Interface State Density International conference

Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

13th European Conference on Silicon Carbide and Related Materials 2021.10.26

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Event date： 2021.10

Language：English Presentation type：Oral presentation (general)
SiO₂/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method International conference

Keito Aoshima, Noriyuki Taoka, Masahiro Horita, Jun Suda

2021 International Conference on Solid State Devices and Materials 2021.9.9

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Event date： 2021.9

Language：English Presentation type：Oral presentation (general)
AlSiO/p型GaN MOSFETにおける移動度制限因子の解析

成田哲生，伊藤健治，冨田一義，堀田昌宏，菊田大悟

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
Mgイオン注入GaNの超高圧アニールによるMgとHの熱拡散

櫻井秀樹，成田哲生，晝川十史，角田健輔，山田真嗣，片岡恵太，堀田昌宏，五十嵐信行，M. Bockowski，須田淳，加地徹

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
Mgイオン注入p型GaNにおける超高圧アニール温度の低減化に向けた検討

晝川十史，櫻井秀樹，藤倉序章，堀田昌宏，M. Bockowski，乙木洋平，加地徹，須田淳

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
DLTS法によるn型GaN中の深い準位評価に対してショットキー障壁高さが与える影響の定量的解析

青島慶人，堀田昌宏，須田淳

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
GaNにおける電子・正孔の衝突イオン化係数の温度依存性

前田拓也，成田哲生，山田真嗣，加地徹，木本恒暢，堀田昌宏，須田淳

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
リン処理を施したSiC MOSFETにおける実効移動度のボディ電位依存性

伊藤滉二，堀田昌宏，須田淳，木本恒暢

第68回応用物理学会春季学術講演会

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Event date： 2021.3

Language：Japanese Presentation type：Oral presentation (general)
MOVPE法によるn型GaNドリフト層形成と残留不純物制御 Invited

成田哲生，堀田昌宏，冨田一義，加地徹，須田淳

第49回結晶成長国内会議

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Event date： 2020.11

Language：Japanese Presentation type：Oral presentation (invited, special)
超高圧アニールを用いたMgイオン注入GaNのp型伝導制御 Invited

櫻井秀樹，成田哲生，晝川十史，山田真嗣，片岡恵太，Malgorzata Iwinska，堀田昌宏，五十嵐信行，Michal Bockowski，須田淳，加地徹

第49回結晶成長国内会議

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Event date： 2020.11

Language：Japanese Presentation type：Oral presentation (invited, special)
Impact of The Schottky Barrier Height on Deep-level Transient Spectroscopy of Gamma-ray-irradiated ntype GaN

K. Aoshima, M. Horita, J. Suda

第39回電子材料シンポジウム

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Event date： 2020.10

Language：Japanese Presentation type：Oral presentation (general)
Impacts of High Temperature Annealing Above 1400 degree C Under N2 Overpressure to Activate Acceptors in Mg-Implanted GaN International conference

H. Sakurai, T. Narita, K. Hirukawa, S. Yamada, A. Koura, K. Kataoka, M. Horita, N. Ikarashi, M. Bockowski, J. Suda, T. Kachi

2020 32nd International Symposium on Power Semiconductor Devices and ICs

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Event date： 2020.9

Language：English Presentation type：Oral presentation (general)
DLTS法によるAl2O3/n型GaN MOS界面準位の評価

青島慶人，堀田昌宏，須田淳，橋詰保

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
超高圧アニールによるMg&Nシーケンシャルイオン注入GaNのアクセプタ形成の実証

櫻井秀樹，成田哲生，晝川十史，山田真嗣，高良昭彦，片岡恵太，堀田昌宏，Bockowski Michal，須田淳，加地徹

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
Mgイオン注入p型GaNの超高圧アニール温度の検討

晝川十史，櫻井秀樹，藤倉序章，堀田昌宏，Bockowski Michal，乙木洋平，加地徹，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
RIEによって生成されたn型GaN中の深い準位

鐘ヶ江一孝，山田真嗣，堀田昌宏，木本恒暢，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
常圧で活性化熱処理したMg注入GaN層のホール効果測定

田中亮，高島信也，上野勝典，江戸雅晴，堀田昌宏，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
SiNキャップ層高温熱処理によりGaN表面付近に導入される電子トラップの深さ方向分布の熱処理時間依存性

古田悟夢，堀田昌宏，田中成明，岡徹，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
GaNの電子・正孔の衝突イオン化係数の測定

前田拓也，成田哲生，山田真嗣，加地徹，木本恒暢，堀田昌宏，須田淳

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
リン処理を施したSiC(0001)/SiO2界面における反転層電子のユニバーサル移動度の評価

伊藤滉二，堀田昌宏，須田淳，木本恒暢

第65回応用物理学会春季学術講演会

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Event date： 2020.3

Language：Japanese Presentation type：Oral presentation (general)
光過渡容量分光法によるn型GaN中の正孔トラップ密度の高速かつ精密定量手法

鐘ヶ江一孝，成田哲生，冨田一義，加地徹，堀田昌宏，木本恒暢，須田淳

先進パワー半導体分科会第6回講演会

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Event date： 2019.12

Language：Japanese Presentation type：Oral presentation (general)
PMA処理を行ったAl2O3/n-GaN MOSダイオードにおいてガンマ線照射により形成されるAl2O3膜中及び界面トラップ

青島慶人，堀田昌宏，金木奨太，須田淳，橋詰保

先進パワー半導体分科会第6回講演会

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Event date： 2019.12

Language：Japanese Presentation type：Oral presentation (general)
Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction International conference

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2019.12

Language：English Presentation type：Oral presentation (general)
Record breakdown fields of 2.8-3.5 MV/cm in GaN p-n junction diodes

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

第38回電子材料シンポジウム

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Event date： 2019.10

Language：Japanese Presentation type：Oral presentation (general)
Development of accurate and quick measurement method for hole trap density in n-type GaN layers by optical isothermal capacitance transient spectroscopy

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

第38回電子材料シンポジウム

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Event date： 2019.10

Language：Japanese Presentation type：Oral presentation (general)
Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN

K. Aoshima, K. Kanegae, M. Horita, J. Suda

第38回電子材料シンポジウム

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Event date： 2019.10

Language：Japanese Presentation type：Oral presentation (general)
Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC International conference

K. Kanegae, T. Okuda, M. Horita, J. Suda, T. Kimoto

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Event date： 2019.10

Language：English Presentation type：Oral presentation (general)
Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction International conference

T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda, T. Kimoto

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Event date： 2019.10

Language：English Presentation type：Oral presentation (general)
リン処理を施したSiC MOSFETにおけるチャネル移動度のボディ層アクセプタ密度依存性

伊藤滉二，堀田昌宏，須田淳，木本恒暢

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
2 色のサブバンドギャップ光を用いた過渡容量分光法によるn型GaN成長層中の炭素関連欠陥密度の高速定量手法

鐘ヶ江一孝，成田哲生，冨田一義，加地徹，堀田昌宏，木本恒暢，須田淳

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
<11-20>方向に電界印加した4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

前田拓也，遅熙倫，田中一，堀田昌宏，須田淳，木本恒暢

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
PMA処理を行ったAl2O3/GaN MOSダイオードにおけるガンマ線照射によるフラットバンド電圧の負方向シフトの膜厚依存性

青島慶人，堀田昌宏，金木奨太，須田淳，橋詰保

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
様々な電極金属のn 型ホモエピタキシャルGaN SBD における障壁高さ温度係数の比較とそれに対する熱処理の効果

村瀬亮介，前田拓也，鐘ヶ江一孝，須田淳，堀田昌宏

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
高圧アニールによるMgイオン注入GaNのアクセプタ形成の実証

櫻井秀樹，山田真嗣，高良昭彦，堀田昌宏，Bockowski Michal，須田淳，加地徹

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Invited

前田拓也，岡田政也，上野昌紀，山本喜之，木本恒暢，堀田昌宏，須田淳

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (invited, special)
p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧シフトとその測定パルス幅依存性

釣本浩貴，堀田昌宏，須田淳

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
ショットキー接合のC-V測定によるp型GaNの実効アクセプタ密度評価の精度に関する理論的検討

六野祥平，堀田昌宏，須田淳

第80回応用物理学会秋季学術講演会

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Event date： 2019.9

Language：Japanese Presentation type：Oral presentation (general)
High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow BeveledMesa Structure Combined with Lightly Mg-Doped p-Layers International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, M. Horita, T. Kimoto, J. Suda

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Event date： 2019.9

Language：English Presentation type：Oral presentation (general)
Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgaplight-excited isothermal capacitance transient spectroscopy International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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Event date： 2019.9

Language：English Presentation type：Oral presentation (general)
Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing FranzKeldysh Effect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Deep Level Traps Introduced in GaN Layers by High-Temperature Thermal Treatment with SiN Cap Layers International conference

S. Furuta, M. Horita, N. Tanaka, T. Oka, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices (Invited) Invited International conference

T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (invited, special)
Clear Evidence of P-Type Formation by Hall-Effect Measurements of Mg-Ion Implanted GaN Activated with Ultra-High-Pressure Annealing International conference

H. Sakurai, M. Omori, S. Yamada, A. Koura, H. Suzuki, T. Narita, K. Kataoka, M. Horita, M. Boćkowski, J. Suda, T. Kachi

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Impact of Gamma-Ray Irradiation on Device Characteristics of p-GaN/ AlGaN/GaN Normally-Off High-Electron-Mobility Transistors International conference

K. Tsurimoto, M. Horita, J. Suda

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Impact of Gamma-Ray Irradiation on Capacitance-Voltage Characteristics of Al2O3/GaN MOS Diodes with Post-Metallization Annealing International conference

K. Aoshima, M. Horita, S. Kaneki, J. Suda, T. Hashizume

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Event date： 2019.7

Language：English Presentation type：Oral presentation (general)
Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurement Utilizing Franz-Keldysh Effect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2019.5

Language：English Presentation type：Oral presentation (general)
GaNエピ基板上MOS特性の制御

上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

電気学会電子・情報・システム部門(C部門) 電子デバイス研究会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
p-GaN/AlGaN/GaN HEMTのガンマ線照射による特性変化の回復過程

釣本浩貴, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
Franz-Keldysh効果を利用した光電流増倍測定によるGaNにおけるキャリアの衝突イオン化係数の推定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
両側空乏ベベルメサ構造を有するGaN p-n接合ダイオードにおける均一なアバランシェ破壊の実現および平行平板破壊電界の評価

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
ベベルメサ構造GaN p-n接合ダイオードの電界分布シミュレーション

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
Quartz-free-HVPE成長n型GaN層における補償アクセプタの起源解明

鐘ヶ江一孝, 藤倉序章, 乙木洋平, 今野泰一郎, 吉田丈洋, 堀田昌宏, 木本恒暢, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
SiNキャップ層高温熱処理によりGaN中に導入される深い準位

古田悟夢, 堀田昌宏, 田中成明, 岡徹, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
横型ショットキーダイオード構造のC-V測定による低ドープn型GaNの実効ドナー密度の評価の精度に関する検討

六野祥平, 坂尾佳祐, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
ホモエピタキシャル成長n型GaNショットキー障壁高さの温度係数の電極金属依存性

村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
ガンマ線照射によるAl2O3/GaN MOSダイオードの容量-電圧特性の変化

青島慶人, 金木奨太, 堀田昌宏, 須田淳, 橋詰保

第66回応用物理学会春季学術講演会

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Event date： 2019.3

Language：Japanese Presentation type：Oral presentation (general)
Overview of carrier compensation in n-type and p-type GaN layers grown by metalorganic vapor phase epitaxy Invited International conference

T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, N. Ikarashi, N. Sawada, M. Horita, J. Suda, T. Kachi

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Event date： 2019.3

Language：English Presentation type：Oral presentation (invited, special)
Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.12

Language：English Presentation type：Oral presentation (general)
n型GaN中の正孔トラップ密度の定量評価

鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

先進パワー半導体分科会第5回講演会

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Event date： 2018.11

Language：Japanese Presentation type：Oral presentation (general)
DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN Invited International conference

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (invited, special)
Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN International conference

K. Aoshima, K. Kanegae, M. Horita, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (general)
Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (general)
Temperature Dependence of Avalanche Multiplicationin GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Eﬀect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (general)
Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.11

Language：English Presentation type：Oral presentation (general)
Temperature dependence of Avalanche Multiplication in GaN PN Diodes Measured by Using Sub-bandgap Light Irradiation

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

第37回電子材料シンポジウム

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Event date： 2018.10

Language：Japanese Presentation type：Oral presentation (general)
p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧およびゲート電流の変化

釣本浩貴, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
Franz-Keldysh効果による光電流を利用したGaN p-n接合ダイオードにおけるアバランシェ増倍の温度依存性の測定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
GaN p-n接合ダイオードの再結合電流解析によるホモエピタキシャル成長p-GaNにおけるSRH寿命の評価

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
n型GaN 中の正孔トラップ密度の定量評価に向けたサブバンドギャップ光照射時の正孔占有率の評価

鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
GaN自立基板上Ni/n-GaN SBDにおける障壁高さ温度特性のドナー密度依存性

村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
ガンマ線照射によりホモエピタキシャル成長n型GaN中に形成される深さ1 eV以上の電子トラップ

青島慶人, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

前田拓也, 遅熙倫, 堀田昌宏, 須田淳, 木本恒暢

第79回応用物理学会秋季学術講演会

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Event date： 2018.9

Language：Japanese Presentation type：Oral presentation (general)
Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage International conference

T. Maeda, X. L. Chi, M. Horita, J. Suda, T. Kimoto

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Event date： 2018.9

Language：English Presentation type：Oral presentation (general)
Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect International conference

T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.9

Language：English Presentation type：Oral presentation (general)
Accurate estimation of H1 trap concentration in n-type GaN layers International conference

K. Kanegae, M. Horita, T. Kimoto, J. Suda

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Event date： 2018.8

Language：English Presentation type：Oral presentation (general)
Electrical characterization of homoepitaxial GaN layers for GaN vertical power devices Invited International conference

J. Suda, M. Horita

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Event date： 2018.8

Language：English Presentation type：Oral presentation (invited, special)
サブバンドギャップ光照射を用いた GaN p-n接合ダイオードのアバランシェ増倍の測定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第10回ナノ構造・エピタキシャル成長講演会

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Event date： 2018.7

Language：Japanese Presentation type：Oral presentation (general)
Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage International conference

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.7

Language：English Presentation type：Oral presentation (general)
Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation International conference

K. Kanegae, M. Horita, T. Kimoto, J. Suda

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Event date： 2018.7

Language：English Presentation type：Oral presentation (general)
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V, and IPE measurements International conference

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, J. Suda

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Event date： 2018.7

Language：English Presentation type：Oral presentation (general)
Mgイオン注入GaN層上におけるノーマリーオフMOSFET検討 Invited

高島信也, 田中亮, 上野勝典, 松山秀昭, 江戸雅晴, 高橋言緒, 清水三聡, 石橋章司, 中川清和, 堀田昌宏, 須田淳, 小島一信, 秩父重英, 上殿明良

第149回結晶工学分科会研究会 GaN on GaNパワーデバイスにむけて～p型GaNの結晶工学～

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Event date： 2018.6

Language：Japanese Presentation type：Oral presentation (general)
Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates International conference

Horita M

IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 2017.7.31

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Language：English Presentation type：Oral presentation (general)

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To the head of Presentations.▲

Research Project for Joint Research, Competitive Funding, etc. 2

窒化ガリウムにおける新生血管の物性解明と形成メカニズム究明

2022.8 - 2024.3

一般研究助成

堀田昌宏

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Authorship：Principal investigator Grant type：Competitive

Grant amount：\1500000
半導体パワーデバイスの実用化に向けた窒化ガリウム中欠陥の物性解明

2020.5 - 2021.11

研究開発助成

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Authorship：Principal investigator Grant type：Competitive

Grant amount：\2000000

To the head of Research Project for Joint Research, Competitive Funding, etc..▲

KAKENHI (Grants-in-Aid for Scientific Research) 6

Fabrication of vertical AlN devices

Grant number：23H01863 2023.4 - 2027.3

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

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Authorship：Coinvestigator(s)
Fabrication of vertical AlN devices

Grant number：23K26556 2023.4 - 2027.3

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

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Authorship：Coinvestigator(s)
高圧水中レーザーアニールによる窒化ガリウム超臨界水低温酸化手法の創出

2015.4 - 2016.3

科学研究費補助金

堀田　昌宏

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Authorship：Principal investigator
積層構造レーザーアニールによる非晶質基板上単結晶ゲルマニウム薄膜の低温形成

2011.4 - 2013.3

科学研究費補助金若手研究(B)

堀田　昌宏
同一ポリタイプ4H-AlN/4H-SiCヘテロ界面の電子デバイス応用に関する研究

2009.9 - 2011.3

科学研究費補助金

堀田　昌宏

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Authorship：Principal investigator
炭化珪素基板上高品質無極性面III族窒化物の成長と電子・光デバイス応用に関する研究

2008.4 - 2009.3

科学研究費補助金

堀田　昌宏

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Authorship：Principal investigator

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To the head of KAKENHI (Grants-in-Aid for Scientific Research).▲