東北大学   金属材料研究所　結晶成長物理学研究部門   日本学術振興会特別研究員（DC2）

2006年4月 - 2007年3月

Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals 査読有り

Ohno Yutaka, Inoue Kaihei, Fujiwara Kozo, Deura Momoko, Kutsukake Kentaro, Yonenaga Ichiro, Shimizu Yasuo, Inoue Koji, Ebisawa Naoki, Nagai Yasuyoshi

APPLIED PHYSICS LETTERS   106 巻 ( 25 )   2015年6月

Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si 査読有り

Ohno Yutaka, Inoue Kaihei, Kutsukake Kentaro, Deura Momoko, Ohsawa Takayuki, Yonenaga Ichiro, Yoshida Hideto, Takeda Seiji, Taniguchi Ryo, Otubo Hideki, Nishitani Sigeto R., Ebisawa Naoki, Shimizu Yasuo, Takamizawa Hisashi, Inoue Koji, Nagai Yasuyoshi

PHYSICAL REVIEW B   91 巻 ( 23 )   2015年6月

Czochralski growth of heavily tin-doped Si crystals 査読有り

Yonenaga I., Taishi T., Inoue K., Gotoh R., Kutsukake K., Tokumoto Y., Ohno Y.

JOURNAL OF CRYSTAL GROWTH   395 巻   頁： 94-97   2014年6月

Slip systems in wurtzite ZnO activated by Vickers indentation on {2(1)over-bar (1)over-bar0} and {10(1)over-bar0} surfaces at elevated temperatures 査読有り

Ohno Y., Koizumi H., Tokumoto Y., Kutsukake K., Taneichi H., Yonenaga I.

JOURNAL OF CRYSTAL GROWTH   393 巻   頁： 119-122   2014年5月

Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements 査読有り

Inoue K., Taishi T., Tokumoto Y., Kutsukake K., Ohno Y., Ohsawa T., Gotoh R., Yonenaga I.

JOURNAL OF CRYSTAL GROWTH   393 巻   頁： 45-48   2014年5月

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains 査読有り

Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

IEEE JOURNAL OF PHOTOVOLTAICS   4 巻 ( 1 ) 頁： 84-87   2014年1月

Three-dimensional evaluation of gettering ability of Sigma 3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy 査読有り

Ohno Yutaka, Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Yonenaga Ichiro, Ebisawa Naoki, Takamizawa Hisashi, Shimizu Yasuo, Inoue Koji, Nagai Yasuyoshi, Yoshida Hideto, Takeda Seiji

APPLIED PHYSICS LETTERS   103 巻 ( 10 )   2013年9月

Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating 査読有り

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

JOURNAL OF CRYSTAL GROWTH   372 巻   頁： 121-128   2013年6月

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies 査読有り

Inoue K., Taishi T., Tokumoto Y., Murao Y., Kutsukake K., Ohno Y., Suezawa M., Yonenaga I.

JOURNAL OF APPLIED PHYSICS   113 巻 ( 7 )   2013年2月

Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries 査読有り

Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

APPLIED PHYSICS EXPRESS   6 巻 ( 2 )   2013年2月

Nanoindentation Hardness and Elastic Modulus of AlGaN Alloys 査読有り

Tokumoto Y., Taneichi H., Ohno Y., Kutsukake K., Miyake H., Hiramatsu K., Yonenaga I.

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)     頁： .   2013年

Growth of Si Single Bulk Crystals Inside Si Melts By the Noncontact Crucible Method Using Silica Crucibles Without Coating Si3N4 Particles 査読有り

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     頁： 174-176   2013年

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation (vol 112, 093526, 2012) 査読有り

Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

JOURNAL OF APPLIED PHYSICS   112 巻 ( 12 )   2012年12月

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation 査読有り

Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

JOURNAL OF APPLIED PHYSICS   112 巻 ( 9 )   2012年11月

Growth of high-quality multicrystalline Si ingots using noncontact crucible method 査読有り

Nakajima Kazuo, Morishita Kohei, Murai Ryota, Kutsukake Kentaro

JOURNAL OF CRYSTAL GROWTH   355 巻 ( 1 ) 頁： 38-45   2012年9月

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth 査読有り

Kutsukake Kentaro, Ise Hideaki, Tokumoto Yuki, Ohno Yutaka, Nakajima Kazuo, Yonenaga Ichiro

JOURNAL OF CRYSTAL GROWTH   352 巻 ( 1 ) 頁： 173-176   2012年8月

Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress 査読有り

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

JOURNAL OF CRYSTAL GROWTH   344 巻 ( 1 ) 頁： 6-11   2012年4月

Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium 査読有り

Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

MATERIALS INTEGRATION   508 巻   頁： 220-223   2012年

Growth of Multicrystalline Si Ingots for Solar Cells Using Noncontact Crucible Method without Touching the Crucible Wall 査読有り

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     頁： 1830-1832   2012年

Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth 査読有り

Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Yonenaga Ichiro, Morishita Kohei, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   110 巻 ( 8 )   2011年10月

Formation mechanism of twin boundaries during crystal growth of silicon 査読有り

Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Morishita Kohei, Nakajima Kazuo

SCRIPTA MATERIALIA   65 巻 ( 6 ) 頁： 556-559   2011年9月

Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells 査読有り

Usami Noritaka, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   109 巻 ( 8 )   2011年4月

Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles 査読有り

Nakajima Kazuo, Kutsukake Kentaro, Fujiwara Kozo, Morishita Kohei, Ono Satoshi

JOURNAL OF CRYSTAL GROWTH   319 巻 ( 1 ) 頁： 13-18   2011年3月

Pattern formation mechanism of a periodically faceted interface during crystallization of Si 査読有り

Tokairin M., Fujiwara K., Kutsukake K., Kodama H., Usami N., Nakajima K.

JOURNAL OF CRYSTAL GROWTH   312 巻 ( 24 ) 頁： 3670-3674   2010年12月

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed 査読有り

Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Stokkan Gaute, Morishita Kohei, Nakajima Kazuo

JOURNAL OF CRYSTAL GROWTH   312 巻 ( 7 ) 頁： 897-901   2010年3月

Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth 査読有り

Usami Noritaka, Yokoyama Ryusuke, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   107 巻 ( 1 )   2010年1月

HIGH EFFICIENCY SOLAR CELLS OBTAINED FROM SMALL SIZE INGOTS WITH 30 CM Phi BY CONTROLLING THE DISTRIBUTION AND ORIENTATION OF DENDRITE CRYSTALS GROWN ALONG THE BOTTOM OF THE INGOTS 査読有り

Nakajima K., Kutsukake K., Fujiwara K., Usami N., Ono S., Yamasaki

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     頁： 817-819   2010年

FORMATION MECHANISM OF TWIN BOUNDARIES IN SILICON MULTICRYSTALS DURING CRYSTAL GROWTH 査読有り

Kutsukake K., Abe T., Usami N., Fujiwara K., Morishita K., Nakajima K.

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     頁： .   2010年

Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon 査読有り

Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Morishita Kohei, Nakajima Kazuo

JAPANESE JOURNAL OF APPLIED PHYSICS   49 巻 ( 4 )   2010年

Growth behavior of faceted Si crystals at grain boundary formation 査読有り

Fujiwara K., Tsumura S., Tokairin M., Kutsukake K., Usami N., Uda S., Nakajima K.

JOURNAL OF CRYSTAL GROWTH   312 巻 ( 1 ) 頁： 19-23   2009年12月

Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth 査読有り

Tokairin M., Fujiwara K., Kutsukake K., Usami N., Nakajima K.

PHYSICAL REVIEW B   80 巻 ( 17 )   2009年11月

Microstructures of Si multicrystals and their impact on minority carrier diffusion length 査読有り

Wang H. Y., Usami N., Fujiwara K., Kutsukake K., Nakajima K.

ACTA MATERIALIA   57 巻 ( 11 ) 頁： 3268-3276   2009年6月

Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance 査読有り

Kutsukake Kentaro, Usami Noritaka, Ohtaniuchi Tsuyoshi, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   105 巻 ( 4 )   2009年2月

Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals 査読有り

Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Yonenaga Ichiro, Nakajima Kazuo

APPLIED PHYSICS EXPRESS   1 巻 ( 7 )   2008年7月

Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis 査読有り

Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   102 巻 ( 10 )   2007年11月

Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities 査読有り

Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   101 巻 ( 6 )   2007年3月

Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon 査読有り

Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Sugawara Takamasa, Shishido Toetsu, Nakajima Kazuo

MATERIALS TRANSACTIONS   48 巻 ( 2 ) 頁： 143-147   2007年2月

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer 査読有り

Usami Noritaka, Kutsukake Kentaro, Nakajima Kazuo, Amtablian Sevak, Fave Alain, Lemiti Mustapha

APPLIED PHYSICS LETTERS   90 巻 ( 3 )   2007年1月

Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration 査読有り

Usami N, Kutsukake K, Sugawara T, Fujwara K, Pan W, Nose Y, Shishido T, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 巻 ( 3A ) 頁： 1734-1737   2006年3月

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique 査読有り

Kitamura M, Usami N, Sugawara T, Kutsukake K, Fujiwara K, Nose Y, Shishido T, Nakajima K

JOURNAL OF CRYSTAL GROWTH   280 巻 ( 3-4 ) 頁： 419-424   2005年7月

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer 査読有り

Usami Noritaka, Kutsukake Kentaro, Pan Wugen, Fujiwara Kozo, Ujihara Toru, Zhang Baoping, Yokoyama Takashi, Nakajima Kazuo

JOURNAL OF CRYSTAL GROWTH   275 巻 ( 1-2 ) 頁： E1203-E1207   2005年2月

Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration 査読有り

Usami N, Kitamura M, Sugawara T, Kutsukake K, Ohdaira K, Nose Y, Fujiwara K, Shishido T, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 巻 ( 24-27 ) 頁： L778-L780   2005年

On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates 査読有り

Kutsukake K, Usami N, Ujihara T, Fujiwara K, Sazaki G, Nakajima K

APPLIED PHYSICS LETTERS   85 巻 ( 8 ) 頁： 1335-1337   2004年8月

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate 査読有り

Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Nakajima K, Zhang BP, Segawa Y

APPLIED SURFACE SCIENCE   224 巻 ( 1-4 ) 頁： 95-98   2004年3月

Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate 査読有り

Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Zhang BP, Segawa Y, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 巻 ( 3A ) 頁： L232-L234   2003年3月