Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS   11 巻 ( 2 ) 頁： 524 - 524   2021年2月

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS LETTERS   117 巻 ( 24 )   2020年12月

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi

SCIENTIFIC REPORTS   10 巻 ( 1 )   2020年11月

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

ACS APPLIED MATERIALS & INTERFACES   12 巻 ( 41 ) 頁： 46466 - 46475   2020年10月

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS   10 巻 ( 10 ) 頁： 2614 - 2623   2020年10月

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   479 巻   頁： 7 - 12   2020年9月

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS LETTERS   117 巻 ( 10 )   2020年9月

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 8 )   2020年8月

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   13 巻 ( 7 )   2020年7月

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   13 巻 ( 6 )   2020年6月

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   539 巻   2020年6月

Impact of high-temperature implantation of Mg ions into GaN

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 5 )   2020年5月

Vertical GaN-on-GaN Schottky Diodes as alpha-Particle Radiation Sensors

Sandupatla Abhinay, Arulkumaran Subramaniam, Ing Ng Geok, Nitta Shugo, Kennedy John, Amano Hiroshi

MICROMACHINES   11 巻 ( 5 )   2020年5月

Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi

CRYSTENGCOMM   22 巻 ( 15 ) 頁： 2632 - 2641   2020年4月

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   257 巻 ( 4 )   2020年4月

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 2 )   2020年2月

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 1 )   2020年1月

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS   7 巻 ( 1 )   2020年1月

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     頁： 349 - 352   2020年

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020年

Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

SENSORS   19 巻 ( 23 )   2019年12月

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES   9 巻 ( 9 )   2019年9月

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

MATERIALS   12 巻 ( 16 )   2019年8月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   516 巻   頁： 63 - 66   2019年6月

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   114 巻 ( 23 )   2019年6月

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   256 巻 ( 6 )   2019年6月

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   514 巻   頁： 13 - 13   2019年5月

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   512 巻   頁： 78 - 83   2019年4月

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES   9 巻 ( 4 )   2019年4月

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   509 巻   頁： 50 - 53   2019年3月

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   508 巻   頁： 58 - 65   2019年2月

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   12 巻 ( 2 )   2019年2月

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE   11 巻 ( 1 ) 頁： 193 - 199   2019年1月

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 10 )   2018年10月

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS   8 巻   2018年5月

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 9 )   2018年5月

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   11 巻 ( 5 )   2018年5月

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

APPLIED PHYSICS LETTERS   112 巻 ( 18 )   2018年4月

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   482 巻   頁： 1 - 8   2018年1月

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system

Nagamatsu Kentaro, Nitta Shugo, Ye Zheng, Nagao Hirofumi, Miki Shinichi, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   254 巻 ( 8 )   2017年8月

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   468 巻   頁： 866 - 869   2017年6月

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers

Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   468 巻   頁： 552 - 556   2017年6月

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2017年