論文 - 黒澤 昌志
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Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 oC and in-situ Sb doping 査読有り
S. Shibayama, K. Takagi, M. Sakshita, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing 頁: Vol. 176, pp. 108302-1〜8 2024年3月
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Planar-type SiGe thermoelectric generator with double cavity structure 査読有り
S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura
Applied Physics Letters 頁: Vol. 124, Issue 12, pp. 123902-1〜6 2024年3月
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Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films 査読有り
T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing 頁: Vol. 176, pp. 108304-1〜7 2024年3月
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Effect of nanostructuring on thermoelectric performance of SiGe thin films 査読有り
S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura
Japanese Journal of Applied Physics 頁: Voi. 62, No. 9, pp. 095001-1〜4 2023年9月
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Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence 査読有り
K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics 頁: Vol. 62, No. 7, pp. 075506-1〜8 2023年7月
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Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy 査読有り
K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
Applied Physics Express 頁: Vol. 16, No. 4, pp. 045501-1〜4 2023年4月
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り
K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa
Materials Science in Semiconductor Processing 頁: Vol. 161, pp. 107462-1〜6 2023年3月
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Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers 査読有り
K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa
Japanese Journal of Applied Physics 頁: Vol. 62, No. SC, pp. SC1074-1〜8 2023年2月
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Superior Power Generation Capacity of GeSn over Si Demonstrated in Cavity-free Thermoelectric Device Architecture 査読有り
M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
Japanese Journal of Applied Physics 頁: Vol. 62, No. SC, pp. SC1058-1〜6 2023年2月
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Investigation of Band Structure in Strained Single Crystalline Si1-xSnx 査読有り
K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura
ECS Transactions 頁: Vol. 109, No. 4, pp. 359-366 2022年9月
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Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001) 査読有り
M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka
Japanese Journal of Applied Physics 頁: Vol. 61, No. SC, pp. SC1048-1〜6 2022年7月
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High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride 査読有り
K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa
AIP Advances 頁: Vol. 12, Issue 5, pp.055318-1〜5 2022年5月
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Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators 査読有り
R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics 頁: Vol. 61, No. SC, pp. SC1086-1~6 2022年4月
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Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments 査読有り
M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa
Japanese Journal of Applied Physics 頁: Vol. 61, No. SC, pp. SC1048-1〜6 2022年2月
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Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region 査読有り
Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori
Advanced Energy Materials 頁: Vol. 12, Issue 2, 2103191-1〜9 2021年11月
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Thermoelectric properties of tin-incorporated group-IV thin films 査読有り
M. Kurosawa and O. Nakatsuka
ECS Transactions 頁: Vol. 104, No. 4, pp. 183-189 2021年10月
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Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity 査読有り
H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao
Applied Physics Letters 頁: Vol. 119, Issue 11, pp. 113903-1〜6 2021年9月
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Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application 査読有り
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Transactions 頁: Vol. 102, No. 4, pp. 3-9 2021年5月
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Close-spaced evaporation of CaGe2 films for scalable GeH film formation 査読有り
K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa
Materials Science in Semiconductor Processing 頁: Vol. 132, pp. 105928-1〜6 2021年5月
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No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film 査読有り
Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao
Journal of Materiomics 頁: Vol. 7, Issue 4, pp. 665-671 2020年12月