Papers - KUROSAWA Masashi
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Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 oC and in-situ Sb doping Reviewed
S. Shibayama, K. Takagi, M. Sakshita, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing page： Vol. 176, pp. 108302-1〜8 2024.3
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Planar-type SiGe thermoelectric generator with double cavity structure Reviewed
S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura
Applied Physics Letters page： Vol. 124, Issue 12, pp. 123902-1〜6 2024.3
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Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films Reviewed
T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing page： Vol. 176, pp. 108304-1〜7 2024.3
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Effect of nanostructuring on thermoelectric performance of SiGe thin films Reviewed
S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura
Japanese Journal of Applied Physics page： Voi. 62, No. 9, pp. 095001-1〜4 2023.9
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Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence Reviewed
K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 62, No. 7, pp. 075506-1〜8 2023.7
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Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy Reviewed
K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
Applied Physics Express page： Vol. 16, No. 4, pp. 045501-1〜4 2023.4
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed
K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa
Materials Science in Semiconductor Processing page： Vol. 161, pp. 107462-1〜6 2023.3
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Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed
K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa
Japanese Journal of Applied Physics page： Vol. 62, No. SC, pp. SC1074-1〜8 2023.2
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Superior Power Generation Capacity of GeSn over Si Demonstrated in Cavity-free Thermoelectric Device Architecture Reviewed
M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
Japanese Journal of Applied Physics page： Vol. 62, No. SC, pp. SC1058-1〜6 2023.2
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Investigation of Band Structure in Strained Single Crystalline Si1-xSnx Reviewed
K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura
ECS Transactions page： Vol. 109, No. 4, pp. 359-366 2022.9
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Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001) Reviewed
M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1048-1〜6 2022.7
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High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride Reviewed
K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa
AIP Advances page： Vol. 12, Issue 5, pp.055318-1〜5 2022.5
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Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed
R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1086-1～6 2022.4
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Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed
M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1048-1〜6 2022.2
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Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region Reviewed
Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori
Advanced Energy Materials page： Vol. 12, Issue 2, 2103191-1〜9 2021.11
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Thermoelectric properties of tin-incorporated group-IV thin films Reviewed
M. Kurosawa and O. Nakatsuka
ECS Transactions page： Vol. 104, No. 4, pp. 183-189 2021.10
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Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed
H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao
Applied Physics Letters page： Vol. 119, Issue 11, pp. 113903-1〜6 2021.9
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Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application Reviewed
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Transactions page： Vol. 102, No. 4, pp. 3-9 2021.5
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Close-spaced evaporation of CaGe2 films for scalable GeH film formation Reviewed
K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa
Materials Science in Semiconductor Processing page： Vol. 132, pp. 105928-1〜6 2021.5
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No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film Reviewed
Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao
Journal of Materiomics page： Vol. 7, Issue 4, pp. 665-671 2020.12