講演・口頭発表等 - 黒澤 昌志
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Growth and applications of GeSn-related group-IV semiconductor materials 国際会議
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
2016 IEEE Photonics Society Summer Topicals Meeting Series
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Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer 国際会議
M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
8th International SiGe Technology and Device Meeting (ISTDM)
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Interfacial Energy Controlled Low-Temperature Crystallization of Ge-rich GeSn on Insulating Substrate 国際会議
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
8th International SiGe Technology and Device Meeting (ISTDM)
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Development of GeSn thin film technology for electronic and optoelectronic applications 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
2016 EMN Summer Meeting
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Sn系IV族半導体混晶薄膜の成長と物性評価
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
電子情報通信学会 シリコン材料・デバイス(SDM)研究会
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Theoretical Studies on Electronic Structures of Silicene Ribbon and Silicene on Insulator 国際会議
K. Shiraishi, A. Hattori, S. Tanaya, M. Araidai, A. Ohta, M. Kurosawa, Y. Hatsugai, M. Sato, and Y. Tanaka
International SYMPOSIUM on Two-Dimensional Layered Materials and Art: Two Worlds Meet
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GeSiSn/GeSn/GeSiSn二重ヘテロ構造の結晶性に対するGeSiSn層の歪の影響
福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
第63回応用物理学会春季学術講演会
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絶縁膜上にあるIV族系二次元結晶の電子状態解析
洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二
日本物理学会 第71回年次大会(2016年)
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Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method 国際会議
A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki
ISPlasma2016/IC-PLANTS2016
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Solid phase crystalization of Si1-x-ySnxCy ternary alloy layers and characteriziation of its crystalline and optical properties 国際会議
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
ISPlasma2016/IC-PLANTS2016
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Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property 国際会議
S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima
ISPlasma2016/IC-PLANTS2016
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界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会(第21回)
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Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析
長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
電子デバイス界面テクノロジー研究会(第21回)
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Formation of poly-Si1-x-ySnxCy ternary alloy layer and characteriziation of its crystalline and optical properties 国際会議
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer 国際会議
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers 国際会議
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers 国際会議
M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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InP(001)基板上における高 Sn 組成 Si1-xSnx 層の固相エピタキシャル成長
加藤元太, 黒澤昌志, 中塚理, 財満鎭明
第15回 日本表面科学会中部支部 学術講演会
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First-principles study on two-dimensional crystals of group IV element on insulating film 国際会議
M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)