Papers - IKARASHI Nobuyuki
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Fabrication of beta-Mn type Co-Zn-Mn(001) film on MgO single crystal substrate
Oshima Daiki, Kato Takeshi, Ikarashi Nobuyuki, Nagao Masahiro
AIP ADVANCES Vol. 13 ( 2 ) 2023.2
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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
Kachi Tetsu, Narita Tetsuo, Sakurai Hideki, Matys Maciej, Kataoka Keita, Hirukawa Kazufumi, Sumida Kensuke, Horita Masahiro, Ikarashi Nobuyuki, Sierakowski Kacper, Bockowski Michal, Suda Jun
JOURNAL OF APPLIED PHYSICS Vol. 132 ( 13 ) 2022.10
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Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
Uedono Akira, Sakurai Hideki, Uzuhashi Jun, Narita Tetsuo, Sierakowski Kacper, Ishibashi Shoji, Chichibu Shigefusa F., Bockowski Michal, Suda Jun, Ohkubo Tadakatsu, Ikarashi Nobuyuki, Hono Kazuhiro, Kachi Tetsu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 259 ( 10 ) 2022.10
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Nanoscale Characteristics of a Room-Temperature Coexisting Phase of Magnetic Skyrmions and Antiskyrmions for Skyrmion-Antiskyrmion-Based Spintronic Applications
Shimizu Daigo, Nagase Tomoki, So Yeong-Gi, Kuwahara Makoto, Ikarashi Nobuyuki, Nagao Masahiro
ACS APPLIED NANO MATERIALS Vol. 5 ( 9 ) page: 13519 - 13528 2022.9
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Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region Reviewed
Ono Ryo, Imai Shinya, Kusama Yuta, Hamada Takuya, Hamada Masaya, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Kano Emi, Ikarashi Nobuyuki, Wakabayashi Hitoshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5
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Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed
Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 15 ( 2 ) 2022.2
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Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed
Sakurai Hideki, Narita Tetsuo, Kataoka Keita, Hirukawa Kazufumi, Sumida Kensuke, Yamada Shinji, Sierakowski Kacper, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu
APPLIED PHYSICS EXPRESS Vol. 14 ( 11 ) 2021.11
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Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates Reviewed
Hamachi T., Tohei T., Hayashi Y., Imanishi M., Usami S., Mori Y., Ikarashi N., Sakai A.
JOURNAL OF APPLIED PHYSICS Vol. 129 ( 22 ) 2021.6
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Observation of domain wall bimerons in chiral magnets Reviewed
Nagase Tomoki, So Yeong-Gi, Yasui Hayata, Ishida Takafumi, Yoshida Hiroyuki K., Tanaka Yukio, Saitoh Koh, Ikarashi Nobuyuki, Kawaguchi Yuki, Kuwahara Makoto, Nagao Masahiro
NATURE COMMUNICATIONS Vol. 12 ( 1 ) 2021.6
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Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration Reviewed International coauthorship
Nakashima Takuya, Kano Emi, Kataoka Keita, Arai Shigeo, Sakurai Hideki, Narita Tetsuo, Sierakowski Kacper, Bockowski Michal, Nagao Masahiro, Suda Jun, Kachi Tetsu, Ikarashi Nobuyuki
APPLIED PHYSICS EXPRESS Vol. 14 ( 1 ) 2021.1
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Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001) Reviewed International coauthorship
Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki
APPLIED PHYSICS EXPRESS Vol. 13 ( 11 ) 2020.11
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Progress on and challenges of p-type formation for GaN power devices Reviewed International coauthorship
Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka
JOURNAL OF APPLIED PHYSICS Vol. 128 ( 9 ) 2020.9
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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu
APPLIED PHYSICS EXPRESS Vol. 13 ( 8 ) 2020.8
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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N-2 partial pressure annealing: Transmission electron microscopy analysis Reviewed International coauthorship
Iwata Kenji, Sakurai Hideki, Arai Shigeo, Nakashima Takuya, Narita Tetsuo, Kataoka Keita, Bockowski Michel, Nagao Masaharu, Suda Jun, Kachi Tetsu, Ikarashi Nobuyuki
JOURNAL OF APPLIED PHYSICS Vol. 127 ( 10 ) 2020.3
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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed International coauthorship
Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.1
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Impacts of high temperature annealing above 1400 degrees C under N-2 overpressure to activate acceptors in Mg-implanted GaN Reviewed International coauthorship
Sakurai Hideki, Narita Tetsuo, Hirukawa Kazufumi, Yamada Shinji, Koura Akihiko, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) page: 321 - 324 2020
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Smectic Liquid-Crystalline Structure of Skyrmions in Chiral Magnet Co8.5Zn7.5Mn4(110) Thin Film Reviewed
Nagase T., Komatsu M., So Y. G., Ishida T., Yoshida H., Kawaguchi Y., Tanaka Y., Saitoh K., Ikarashi N., Kuwahara M., Nagao M.
PHYSICAL REVIEW LETTERS Vol. 123 ( 13 ) 2019.9
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Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices Reviewed
Nagata Zenya, Shimizu Takuma, Isaka Tsuyoshi, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira
SCIENTIFIC REPORTS Vol. 9 2019.7
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Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed
Isobe Yasuhiro, Sakai Takayuki, Sugiyama Naoharu, Mizushima Ichiro, Suguro Kyoichi, Miyashita Naoto, Lu Yi, Wilson Amalraj Frank, Kumar Dhasiyan Arun, Ikarashi Nobuyuki, Kondo Hiroki, Ishikawa Kenji, Shimizu Naohiro, Oda Osamu, Sekine Makoto, Hori Masaru
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 37 ( 3 ) 2019.5
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Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer Reviewed International coauthorship
Iwata Kenji, Narita Tetsuo, Nagao Masahiro, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu, Ikarashi Nobuyuki
APPLIED PHYSICS EXPRESS Vol. 12 ( 3 ) 2019.3