研究者詳細 - 白石　賢二

論文 - 白石　賢二

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シリコン原子はどこへ行く? まだまだ不思議な熱酸化招待有り

影島博之，秋山亨，白石賢二，植松真司

応用物理学会誌 91 巻 ( 3 ) 頁： 155 - 159 2022年3月

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Kageshima Hiroyuki, Akiyama Toru, Shiraishi Kenji

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 162 巻 2023年8月

Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor

Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Sasaoka Kenji, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen, Yamada Kazuyoshi

CONDENSED MATTER 8 巻 ( 2 ) 2023年6月

GaN薄膜成長機構解明への量子論計算科学のアプローチ

押山淳, 白石賢二

日本結晶成長学会誌 50 巻 ( 1 ) 2023年4月

GaN有機金属気相成長におけるデジタルツイン開発の現状

草場彰, 寒川義裕, 久保山哲二, 新田州吾, 白石賢二, 押山淳

日本結晶成長学会誌 50 巻 ( 1 ) 2023年4月

Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis

Nagahashi Tomoya, Karasawa Hajime, Horiike Ryota, Kimura Tomoya, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 4 ) 2023年4月

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators 査読有り

Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

Materials Science in Semiconductor Processing 157 巻頁： 107306 2023年4月

Microscopic physical origin of charge traps in 3D NAND flash memories

Nanataki Fugo, Iwata Jun-Ichi, Chokawa Kenta, Araidai Masaaki, Oshiyama Atsushi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SC ) 2023年4月

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

Ohata Yoshiki, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 157 巻 2023年4月

Insight into the step flow growth of gallium nitride based on density functional theory

Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

APPLIED SURFACE SCIENCE 613 巻 2023年3月

Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-transfer torque Magnetic Random-Access Memory: A First-Principles Study 査読有り

K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi

IEEE Transactions on Magnetics 59 巻 ( 4 ) 2023年2月

Atomic and electronic structures of interfaces between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN polar surfaces revealed by first-principles simulated annealing technique

Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

JOURNAL OF APPLIED PHYSICS 133 巻 ( 6 ) 2023年2月

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process 査読有り

Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

Applied Physics Letters 121 巻 ( 24 ) 頁： 243903 2022年12月

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

Ohata Yoshiki, Nakanishi Toru, Chokawa Kenta, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

APPLIED PHYSICS LETTERS 121 巻 ( 24 ) 2022年12月

Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction

Ogawa Yutaro, Araidai Masaaki, Endoh Tetsuo, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS 132 巻 ( 21 ) 2022年12月

Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

Nanataki Fugo, Shiraishi Kenji, Iwata Jun-ichi, Matsushita Yu-ichiro, Oshiyama Atsushi

PHYSICAL REVIEW B 106 巻 ( 15 ) 2022年10月

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

Kusaba A., Nitta S., Shiraishi K., Kuboyama T., Kangawa Y.

APPLIED PHYSICS LETTERS 121 巻 ( 16 ) 2022年10月

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

Boero Mauro, Bui Kieu My, Shiraishi Kenji, Ishisone Kana, Kangawa Yoshihiro, Oshiyama Atsushi

APPLIED SURFACE SCIENCE 599 巻 2022年10月

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Shiraishi Kenji

SURFACE SCIENCE 723 巻 2022年9月

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

Kimura Tomoya, Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

PHYSICAL REVIEW B 106 巻 ( 3 ) 2022年7月

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Chokawa Kenta, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SH ) 2022年7月

Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators

Ohata Yoshiki, Araidai Masaaki, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SH ) 2022年7月

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction 査読有り

Tsunashi Shimizu, Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi

Physical Review Materials 5 巻 ( 11 ) 頁： 114601-1 - 114601-12 2021年11月

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

Shimizu Tsunashi, Akiyama Toru, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

PHYSICAL REVIEW MATERIALS 5 巻 ( 11 ) 2021年11月

Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

APPLIED SURFACE SCIENCE 557 巻 2021年8月

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Chokawa Kenta, Daigo Yoshiaki, Mizushima Ichiro, Yoda Takashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 8 ) 2021年8月

カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討招待有り査読有り

中西徹, 宮島岳史, 長川健太, 洗平昌晃, 杉山達彦, 橋口原, 白石賢二

電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 141 巻 ( 8 ) 頁： 292 - 298 2021年8月

Defect-free interface between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN(0001) revealed by first-principles simulated annealing technique

Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

APPLIED PHYSICS LETTERS 119 巻 ( 1 ) 2021年7月

Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月

Theoretical study on the effect of H-2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

Sakakibara Soma, Chokawa Kenta, Araidai Masaaki, Kusaba Akira, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 4 ) 2021年4月

Effects of the Compressibility of Turbulence on the Dust Coagulation Process in Protoplanetary Disks

Sakurai Yoshiki, Ishihara Takashi, Furuya Hitomi, Umemura Masayuki, Shiraishi Kenji

ASTROPHYSICAL JOURNAL 911 巻 ( 2 ) 2021年4月

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

CRYSTAL GROWTH & DESIGN 21 巻 ( 3 ) 頁： 1878 - 1890 2021年3月

First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model

Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen

CONDENSED MATTER 5 巻 ( 4 ) 2020年12月

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji

APPLIED PHYSICS LETTERS 117 巻 ( 19 ) 2020年11月

カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討招待有り査読有り

中西徹，宮島岳史，長川健太，洗平昌晃，白石賢二，杉山達彦，橋口原

「センサ・マイクロマシンと応用システム」シンポジウム論文集電気学会センサ・マイクロマシン部門 [編] 37 巻頁： 6 2020年10月

Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene

Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS 128 巻 ( 12 ) 2020年9月

Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study 招待有り査読有り

Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

ECS Transactions 98 巻 ( 3 ) 頁： 37 2020年9月

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 8 ) 頁： . 2020年8月

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al₂O₃)_1-x(SiO₂)_x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji

PHYSICAL REVIEW APPLIED 14 巻 ( 1 ) 2020年7月

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.

APPLIED PHYSICS LETTERS 117 巻 ( 1 ) 2020年7月

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO₂ interface

Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 14 巻 ( 6 ) 2020年6月

Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

APPLIED PHYSICS EXPRESS 13 巻 ( 5 ) 頁： . 2020年5月

iop.org の [HTML] Full View Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface 招待有り査読有り

Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

Japanese Journal of Applied Physics 59 巻 ( SM ) 頁： SMMD01 2020年4月

Computational study of oxygen stability in vicinal m (10− 10)-GaN growth by MOVPE 招待有り査読有り

Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

Applied Physics Express 13 巻 ( 5 ) 頁： 055507 2020年4月

A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics

Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics 招待有り査読有り

Kieu My Bui, Mauro Boero, Kenji Shiraishi, Atsushi Oshiyama

Japanese Journal of Applied Physics 59 巻 ( SG ) 頁： SGGK04 2020年2月

Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN

Oshiyama Atsushi, Bui Kieu My, Boero Mauro, Kangawa Yoshihiro, Shiraishi Kenji

2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020) 頁： 11 - 14 2020年

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces

Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 11 ) 2019年11月

First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 11 ) 2019年11月

Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring

Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 11 ) 2019年11月

Theoretical studies on the switching mechanism of VMCO memories

Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.

MICROELECTRONIC ENGINEERING 215 巻 2019年7月

Self-forming and self-decomposing gallium oxide layers at the GaN/Al₂O₃ interfaces

Chokawa Kenta, Shiraishi Kenji

APPLIED PHYSICS EXPRESS 12 巻 ( 6 ) 2019年6月

Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons

Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio

JOURNAL OF PHYSICS-CONDENSED MATTER 31 巻 ( 10 ) 2019年3月

First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy

Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

JOURNAL OF CRYSTAL GROWTH 507 巻頁： 421-424 2019年2月

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 頁： . 2019年

Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory

Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) 頁： 1 - 3 2019年

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji

IEICE ELECTRONICS EXPRESS 15 巻 ( 23 ) 2018年12月

Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

JOURNAL OF PHYSICAL CHEMISTRY C 122 巻 ( 43 ) 頁： 24665-24671 2018年11月

Effects of annealing with CO and CO₂ molecules on oxygen vacancy defect density in amorphous SiO₂ formed by thermal oxidation of SIC

Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS 124 巻 ( 13 ) 2018年10月

Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO₂ layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories

Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 2018年8月

Theoretical study of strain-induced modulation of the bandgap in SiC

Chokawa Kenta, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月

Effect of incorporation of nitrogen atoms in Al₂O₃ gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji

APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月

Reconsideration of Si pillar thermal oxidation mechanism

Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Oxygen concentration dependence of silicon oxide dynamical properties

Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO₂ interface (vol 11, 031002, 2018)

Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji