論文 - 白石 賢二
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Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces
Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SH ) 2022年7月
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Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators
Ohata Yoshiki, Araidai Masaaki, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SH ) 2022年7月
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Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction 査読有り
Tsunashi Shimizu, Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi
Physical Review Materials 5 巻 ( 11 ) 頁： 114601-1 - 114601-12 2021年11月
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Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction
Shimizu Tsunashi, Akiyama Toru, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
PHYSICAL REVIEW MATERIALS 5 巻 ( 11 ) 2021年11月
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Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth
Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi
APPLIED SURFACE SCIENCE 557 巻 2021年8月
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First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
Chokawa Kenta, Daigo Yoshiaki, Mizushima Ichiro, Yoda Takashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 8 ) 2021年8月
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カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討 招待有り 査読有り
中西 徹, 宮島 岳史, 長川 健太, 洗平 昌晃, 杉山 達彦, 橋口 原, 白石 賢二
電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 141 巻 ( 8 ) 頁： 292 - 298 2021年8月
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Defect-free interface between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN(0001) revealed by first-principles simulated annealing technique
Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
APPLIED PHYSICS LETTERS 119 巻 ( 1 ) 2021年7月
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Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation
Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月
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Theoretical study on the effect of H-2 and NH3 on trimethylgallium decomposition process in GaN MOVPE
Sakakibara Soma, Chokawa Kenta, Araidai Masaaki, Kusaba Akira, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 4 ) 2021年4月
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Effects of the Compressibility of Turbulence on the Dust Coagulation Process in Protoplanetary Disks
Sakurai Yoshiki, Ishihara Takashi, Furuya Hitomi, Umemura Masayuki, Shiraishi Kenji
ASTROPHYSICAL JOURNAL 911 巻 ( 2 ) 2021年4月
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Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi
CRYSTAL GROWTH & DESIGN 21 巻 ( 3 ) 頁： 1878 - 1890 2021年3月
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First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model
Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen
CONDENSED MATTER 5 巻 ( 4 ) 2020年12月
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Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators
Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji
APPLIED PHYSICS LETTERS 117 巻 ( 19 ) 2020年11月
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カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討 招待有り 査読有り
中西徹， 宮島岳史， 長川健太， 洗平昌晃， 白石賢二， 杉山達彦， 橋口原
「センサ・マイクロマシンと応用システム」 シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編] 37 巻 頁： 6 2020年10月
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Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene
Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS 128 巻 ( 12 ) 2020年9月
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Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study 招待有り 査読有り
Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
ECS Transactions 98 巻 ( 3 ) 頁： 37 2020年9月
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Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO
Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 8 ) 頁： . 2020年8月
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Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji
PHYSICAL REVIEW APPLIED 14 巻 ( 1 ) 2020年7月
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes
Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.
APPLIED PHYSICS LETTERS 117 巻 ( 1 ) 2020年7月