Papers - SHIRAISHI Kenji
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シリコン原子はどこへ行く? まだまだ不思議な熱酸化 Invited
影島博之, 秋山亨, 白石賢二, 植松真司
応用物理学会誌 Vol. 91 ( 3 ) page: 155 - 159 2022.3
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First-principles study on silicon emission from interface into oxide during silicon thermal oxidation
Kageshima Hiroyuki, Akiyama Toru, Shiraishi Kenji
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 162 2023.8
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Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor
Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Sasaoka Kenji, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen, Yamada Kazuyoshi
CONDENSED MATTER Vol. 8 ( 2 ) 2023.6
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GaN薄膜成長機構解明への量子論計算科学のアプローチ
押山 淳, 白石 賢二
日本結晶成長学会誌 Vol. 50 ( 1 ) 2023.4
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GaN有機金属気相成長におけるデジタルツイン開発の現状
草場 彰, 寒川 義裕, 久保山 哲二, 新田 州吾, 白石 賢二, 押山 淳
日本結晶成長学会誌 Vol. 50 ( 1 ) 2023.4
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Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis
Nagahashi Tomoya, Karasawa Hajime, Horiike Ryota, Kimura Tomoya, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 4 ) 2023.4
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Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators Reviewed
Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi
Materials Science in Semiconductor Processing Vol. 157 page: 107306 2023.4
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Microscopic physical origin of charge traps in 3D NAND flash memories
Nanataki Fugo, Iwata Jun-Ichi, Chokawa Kenta, Araidai Masaaki, Oshiyama Atsushi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SC ) 2023.4
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Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators
Ohata Yoshiki, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 157 2023.4
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Insight into the step flow growth of gallium nitride based on density functional theory
Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi
APPLIED SURFACE SCIENCE Vol. 613 2023.3
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Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-transfer torque Magnetic Random-Access Memory: A First-Principles Study Reviewed
K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi
IEEE Transactions on Magnetics Vol. 59 ( 4 ) 2023.2
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Atomic and electronic structures of interfaces between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN polar surfaces revealed by first-principles simulated annealing technique
Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
JOURNAL OF APPLIED PHYSICS Vol. 133 ( 6 ) 2023.2
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Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process Reviewed
Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi
Applied Physics Letters Vol. 121 ( 24 ) page: 243903 2022.12
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Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process
Ohata Yoshiki, Nakanishi Toru, Chokawa Kenta, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
APPLIED PHYSICS LETTERS Vol. 121 ( 24 ) 2022.12
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Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction
Ogawa Yutaro, Araidai Masaaki, Endoh Tetsuo, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS Vol. 132 ( 21 ) 2022.12
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Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states
Nanataki Fugo, Shiraishi Kenji, Iwata Jun-ichi, Matsushita Yu-ichiro, Oshiyama Atsushi
PHYSICAL REVIEW B Vol. 106 ( 15 ) 2022.10
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Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
Kusaba A., Nitta S., Shiraishi K., Kuboyama T., Kangawa Y.
APPLIED PHYSICS LETTERS Vol. 121 ( 16 ) 2022.10
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An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth
Boero Mauro, Bui Kieu My, Shiraishi Kenji, Ishisone Kana, Kangawa Yoshihiro, Oshiyama Atsushi
APPLIED SURFACE SCIENCE Vol. 599 2022.10
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Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study
Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Shiraishi Kenji
SURFACE SCIENCE Vol. 723 2022.9
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Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth
Kimura Tomoya, Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
PHYSICAL REVIEW B Vol. 106 ( 3 ) 2022.7