筑波大学　助教授　物理学系

2001.1 - 2004.3

日本電信電話株式会社

1988.4 - 2000.12

応用物理学会   応用物理編集委員

2000.4 - 2002.3

Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis

Nagahashi Tomoya, Karasawa Hajime, Horiike Ryota, Kimura Tomoya, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( 4 )   2023.4

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators Reviewed

Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

Materials Science in Semiconductor Processing   Vol. 157   page： 107306   2023.4

Microscopic physical origin of charge traps in 3D NAND flash memories

Nanataki Fugo, Iwata Jun-Ichi, Chokawa Kenta, Araidai Masaaki, Oshiyama Atsushi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SC )   2023.4

Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

Ohata Yoshiki, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 157   2023.4

Insight into the step flow growth of gallium nitride based on density functional theory

Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

APPLIED SURFACE SCIENCE   Vol. 613   2023.3

Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-transfer torque Magnetic Random-Access Memory: A First-Principles Study Reviewed

K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi

IEEE Transactions on Magnetics   Vol. 59 ( 4 )   2023.2

Atomic and electronic structures of interfaces between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN polar surfaces revealed by first-principles simulated annealing technique

Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

JOURNAL OF APPLIED PHYSICS   Vol. 133 ( 6 )   2023.2

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process Reviewed

Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

Applied Physics Letters   Vol. 121 ( 24 ) page： 243903   2022.12

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

Ohata Yoshiki, Nakanishi Toru, Chokawa Kenta, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

APPLIED PHYSICS LETTERS   Vol. 121 ( 24 )   2022.12

Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction

Ogawa Yutaro, Araidai Masaaki, Endoh Tetsuo, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 21 )   2022.12

Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

Nanataki Fugo, Shiraishi Kenji, Iwata Jun-ichi, Matsushita Yu-ichiro, Oshiyama Atsushi

PHYSICAL REVIEW B   Vol. 106 ( 15 )   2022.10

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

Kusaba A., Nitta S., Shiraishi K., Kuboyama T., Kangawa Y.

APPLIED PHYSICS LETTERS   Vol. 121 ( 16 )   2022.10

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

Boero Mauro, Bui Kieu My, Shiraishi Kenji, Ishisone Kana, Kangawa Yoshihiro, Oshiyama Atsushi

APPLIED SURFACE SCIENCE   Vol. 599   2022.10

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Shiraishi Kenji

SURFACE SCIENCE   Vol. 723   2022.9

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

Kimura Tomoya, Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

PHYSICAL REVIEW B   Vol. 106 ( 3 )   2022.7

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Chokawa Kenta, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SH )   2022.7

Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators

Ohata Yoshiki, Araidai Masaaki, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SH )   2022.7

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction Reviewed

Tsunashi Shimizu, Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi

Physical Review Materials   Vol. 5 ( 11 ) page： 114601-1 - 114601-12   2021.11

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

Shimizu Tsunashi, Akiyama Toru, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

PHYSICAL REVIEW MATERIALS   Vol. 5 ( 11 )   2021.11

Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

APPLIED SURFACE SCIENCE   Vol. 557   2021.8

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Chokawa Kenta, Daigo Yoshiaki, Mizushima Ichiro, Yoda Takashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 8 )   2021.8

Investigation of Negative Charge Storage Mechanism in the Potassium Ion Electret by First-Principle Calculations Invited Reviewed

Nakanishi, Toru ; Miyajima, Takeshi ; Chokawa, Kenta ; Araidai, Masaaki ; Sugiyama, Tatsuhiko ; Hashiguchi, Gen ; Shiraishi, Kenji

IEEJ Transactions on Sensors and Micromachines   Vol. 141 ( 8 ) page： 292 - 298   2021.8

Defect-free interface between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN(0001) revealed by first-principles simulated annealing technique

Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

APPLIED PHYSICS LETTERS   Vol. 119 ( 1 )   2021.7

Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

Theoretical study on the effect of H-2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

Sakakibara Soma, Chokawa Kenta, Araidai Masaaki, Kusaba Akira, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 4 )   2021.4

Effects of the Compressibility of Turbulence on the Dust Coagulation Process in Protoplanetary Disks

Sakurai Yoshiki, Ishihara Takashi, Furuya Hitomi, Umemura Masayuki, Shiraishi Kenji

ASTROPHYSICAL JOURNAL   Vol. 911 ( 2 )   2021.4

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

CRYSTAL GROWTH & DESIGN   Vol. 21 ( 3 ) page： 1878 - 1890   2021.3

First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model

Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen

CONDENSED MATTER   Vol. 5 ( 4 )   2020.12

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji

APPLIED PHYSICS LETTERS   Vol. 117 ( 19 )   2020.11

カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討 Invited Reviewed

中西徹， 宮島岳史， 長川健太， 洗平昌晃， 白石賢二， 杉山達彦， 橋口原

「センサ・マイクロマシンと応用システム」 シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   Vol. 37   page： 6   2020.10

Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene

Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study Invited Reviewed

Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

ECS Transactions   Vol. 98 ( 3 ) page： 37   2020.9

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 ) page： .   2020.8

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al₂O₃)_1-x(SiO₂)_x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji

PHYSICAL REVIEW APPLIED   Vol. 14 ( 1 )   2020.7

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.

APPLIED PHYSICS LETTERS   Vol. 117 ( 1 )   2020.7

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO₂ interface

Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 14 ( 6 )   2020.6

Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page： .   2020.5

iop.org の [HTML] Full View Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface Invited Reviewed

Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

Japanese Journal of Applied Physics   Vol. 59 ( SM ) page： SMMD01   2020.4

Computational study of oxygen stability in vicinal m (10− 10)-GaN growth by MOVPE Invited Reviewed

Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

Applied Physics Express   Vol. 13 ( 5 ) page： 055507   2020.4

A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics

Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics Invited Reviewed

Kieu My Bui, Mauro Boero, Kenji Shiraishi, Atsushi Oshiyama

Japanese Journal of Applied Physics   Vol. 59 ( SG ) page： SGGK04   2020.2

Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN

Oshiyama Atsushi, Bui Kieu My, Boero Mauro, Kangawa Yoshihiro, Shiraishi Kenji

2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020)     page： 11 - 14   2020

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces

Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring

Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

Theoretical studies on the switching mechanism of VMCO memories

Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.

MICROELECTRONIC ENGINEERING   Vol. 215   2019.7

Self-forming and self-decomposing gallium oxide layers at the GaN/Al₂O₃ interfaces

Chokawa Kenta, Shiraishi Kenji

APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons

Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio

JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 31 ( 10 )   2019.3

First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy

Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

JOURNAL OF CRYSTAL GROWTH   Vol. 507   page： 421-424   2019.2

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page： .   2019

Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory

Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019)     page： 1 - 3   2019

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji

IEICE ELECTRONICS EXPRESS   Vol. 15 ( 23 )   2018.12

Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 122 ( 43 ) page： 24665-24671   2018.11

Effects of annealing with CO and CO₂ molecules on oxygen vacancy defect density in amorphous SiO₂ formed by thermal oxidation of SIC

Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 13 )   2018.10

Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO₂ layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories

Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

Theoretical study of strain-induced modulation of the bandgap in SiC

Chokawa Kenta, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

Effect of incorporation of nitrogen atoms in Al₂O₃ gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji

APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO₂ interface (vol 11, 031002, 2018)

Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

Reconsideration of Si pillar thermal oxidation mechanism

Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Oxygen concentration dependence of silicon oxide dynamical properties

Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation

Akiyama Toru, Hori Shinsuke, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

Investigation of the GaN/ Al₂O₃ Interface by First Principles Calculations

Chokawa Kenta, Kojima Eiji, Araidai Masaaki, Shiraishi Kenji

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 4 )   2018.4

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

First principles study of the effect of hydrogen annealing on SiC MOSFETs

Chokawa Kenta, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃ superlattice

Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO₂ interface

Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

APPLIED PHYSICS EXPRESS   Vol. 11 ( 3 )   2018.3

Dust Coagulation Regulated by Turbulent Clustering in Protoplanetary Disks

Ishihara Takashi, Kobayashi Naoki, Enohata Kei, Umemura Masayuki, Shiraishi Kenji

ASTROPHYSICAL JOURNAL   Vol. 854 ( 2 )   2018.2

Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page： 41-49   2018

DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy

Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 111 ( 14 )   2017.10

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

Shirakawa Hiroki, Yamaguchi Keita, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

IEICE TRANSACTIONS ON ELECTRONICS   Vol. E100C ( 10 ) page： 928-933   2017.10

First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface

Araidai Masaaki, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 9 )   2017.9

Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy

Kusaba Akira, Kangawa Yoshihiro, Kempisty Pawel, Valencia Hubert, Shiraishi Kenji, Kumagai Yoshinao, Kakimoto Koichi, Koukitu Akinori

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

First principles investigation of SiC/AlGaN(0001) band offset

Kojima E., Endo K., Shirakawa H., Chokawa K., Araidai M., Ebihara Y., Kanemura T., Onda S., Shiraishi K.

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 758-760   2017.6

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 950-953   2017.6

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

Evaluation of energy band offset of Si _1-xSn_x semiconductors by numerical calculation using density functional theory

Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio

JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 29 ( 11 )   2017.3

DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy

Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

Appl. Phys.Lett.   ( 111 ) page： 141602   2017

Defect Formation in SiO2 Formed by Thermal Oxidation of SiC

Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page： 242-243   2017

First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN

Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR   Vol. 80 ( 1 ) page： 295-301   2017

Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon

H.Kagechima, K.Shiraishi, T.Endoh

ECS Transactions   Vol. 75 ( 5 ) page： 216-226   2016

Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna Reviewed

N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada

Japanese Journal of Applied Physics   Vol. 54(4)   page： 025009   2015

First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations Reviewed

A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

Japanese Journal of Applied Physics   Vol. 54(10)   page： 101301   2015

First-principles investigations for oxidation reaction processes at 4H-SiC/SiO₂ interface and its orientation dependence Reviewed

T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

Surface Science   Vol. 641   page： 174-179   2015

Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations Reviewed

Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi

Applied Physics Express   ( 7 ) page： 045202.1-3   2014.3

A QM/MM study of nitric oxide reductase-catalysed N₂O formation Reviewed

M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

Molecular Physics: An International Journal at the Interface Between Chemistry and Physics   ( 112 ) page： 393-397   2014.2

A QM/MM study of nitric oxide reductase-catalysed N₂O formation Reviewed

M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

International Journal of Quantum Chemistry,   ( 112 ) page： 393-397   2014.1

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure Reviewed

Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura

Optics Express   ( 22 ) page： 1997-2006   2014.1

Role of nitrogen incorporation into Al₂O₃-based resistive random-access memory Reviewed

40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi

Appl. Phys. Exp.   ( 7 ) page： 074202-074205   2014

GeTe sequences in superlattice phase change memories and their electrical characteristics Reviewed

39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,

Appl. Phys. Lett.   ( 104 ) page： 252106-252108   2014

Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations Reviewed

38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,

Appl. Phys. Exp.   ( 7 ) page： 045202-045204   2014

Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Reviewed

Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama

Materials   ( 6 ) page： 3309-3360   2013.12

Nanoscale (-10nm) 3D vertical ReRAM and NbO₂ threshold selector with TiN electrode Reviewed

E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang

Tech. Digest of 2013 International Electron Devices Meeting     page： P10.5.1-P10.5.4   2013.12

Charge-injection phase change memory with high-quality GeTe/Sb₂Te₃ superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations Reviewed

T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi

Tech. Digest of 2013 International Electron Devices Meeting     page： P.30.5.1-P.30.5.4   2013.12

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching Reviewed

K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

IEEE Transactions on Electron Devices   ( 60 ) page： 3400-3406   2013.11

Charge-dependent oxygen vacancy diffusion in Al₂O₃-based resistive-random-access-memories Reviewed

M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

Appl. Phys. Lett.   ( 103 ) page： 93504   2013.10

Interstitial oxygen induced Fermi level pinning in the Al₂O₃-based high-k MISFET with heavy-doped n-type poly-Si gates Reviewed

M. Y. Yang, K. Kamiya, K. Shiraishi

AIP Advances   ( 3 ) page： 102113   2013.10

Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Reviewed

K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,

ECS Trans. 58     page： 181-188   2013.10

Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories Reviewed

Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi

Physical Review B   ( 87 ) page： 155201   2013.8

Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon Reviewed

M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi

J. Appl. Phys.   ( 114 ) page： 63701   2013.8

Effect of Coulomb interaction on multi-electronwave packet dynamics Reviewed

T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

AIP Conf. Proc.   ( 1566 ) page： 421-422   2013.8

Physical origins of ON-OFF switching in ReRAM via VO based conducting channels Reviewed

K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi

AIP Conf. Proc.   ( 1566 ) page： 11-12   2013.8

Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II Reviewed

K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi

Journal of Biomolecular Structure and Dynamics   ( 31 ) page： 1-7   2013.7

Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications Reviewed

N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,

Tech. Digest of 2013 Symposium on VLSI Tech.     page： T130-T131   2013.6

Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure Reviewed

Kenji Shiraisi, Taro Shiokawa, Genki Fujita

Jpn. J. Appl. Phys   ( 52 ) page： 04CJ06   2013.4

Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer

M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi

Jpn. J. Appl. Phys   ( 52 ) page： 04CD11   2013.4

On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors Reviewed

H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio

J. Phys.: Conf. Ser.   ( 429 ) page： 12043   2013.4

Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel Reviewed

C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi

Appl. Phys. Exp.   ( 6 ) page： 65201   2013.4

Calculation of the electron transfer coupling matrix element in diabatic reactions Reviewed

M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,

International Journal of Quantum Chemistry   ( 13 ) page： 342-347   2013

The dissociation modes of threading screw dislocations in 4H-SiC Reviewed

S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka

Phil. Mag. Lett.   ( 93 ) page： 591-600   2013

Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET Reviewed

S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka

Phil. Mag. Lett.   ( 93 ) page： 439-447   2013

Theoretical Study of N incorporation Effect during SiC Oxidation Reviewed

21. Shigenori Kato, Kenta Chokawa, Katsumasa Kamiya, Kenji Shiraishi,

Materials Science Forum,     page： 740-742, 455-458   2013

A New-Type of Defect Generation at a 4H-SiC/SiO2 interface by Oxidation Induced Compressive Strain Reviewed

20. Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

Materials Science Forum,     page： 740-742, 469-472   2013

Origins of Negative Fixed Charge in Wet Oxidation for SiC Reviewed

19. Katsumasa Kamiya, Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Kenji Shiraishi,

Materials Science Forum     page： 740-742, 409-412   2013

Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching Reviewed

18. J. Tanaka K. Shiraishi

e-Journal of Surface Science and Nanotechnology,   ( 11 ) page： 1-7   2013

Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule Reviewed

Y. Takagi, K. Shiraishi, M. Kasu H. Sato,

Surface Science,     page： 203?206   2013

Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors Reviewed

5. Y. Ebihara, K. Kamiya, K. Shiraishi . A. Yamaguchi,

physica status solidi (c)   ( 8 ) page： 2279-2281   2012

Theoretical study of Si-based ionic switch Reviewed

15. Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama,

Applied Physics Letters   ( 100 ) page： 203506-203509   2012

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide Reviewed

14. Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

Applied Physics Letters   ( 100 ) page： 212110-212112   2012

Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

13. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

,Jpn. J. Appl. Phys. 51, Art.     page： 02BM03   2012

Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

12. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

Jpn. J. Appl. Phys. 51, Art.     page： 02BJ11   2012

Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

11. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

Jpn. J. Appl. Phys. 51, Art.     page： 02BJ01   2012

ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Reviewed

10. K. Kamiya, M. Y. Yang, S.-G. Park,B. Magyari-Köpe,Y. Nishi, M. Niwa, K. Shiraishi

Appl. Phys. Lett. 100, Art.     page： 073502   2012

Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material Reviewed

N. Umezawa K. Shiraishi,,

Appl. Phys. Lett. 100, Art.     page： 092904   2012

Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

8. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

Jpn. J. Appl. Phys. 51, Art.     page： 02BM03   2012

Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

7. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

Jpn. J. Appl. Phys. 51, Art.     page： 02BJ11   2012

Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

6. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

Jpn. J. Appl. Phys. 51, Art.     page： 02BJ01   2012

Physics in Designing Desirable ReRAM Stack Structure -Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal

4. Katsumasa Kamiya, Moon Young Yang, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi,

Technical Digest of 2012 International Electron Devices Meeting,     page： 478-481   2012

Atomistic Design of Guiding Principles for High Quality Metal-Oxide-Nitride-Oxide-Semiconductor Memories:First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers Reviewed

1. K. Yamguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

Jpn. J. Appl. Phys. 50 Art.     page： 04DD05   2011

Guiding Principle of Highly Scalable MONOS-Type Memory

1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

ESC Transaction,   ( 41-7 ) page： 71-78   2011

Calculation of the Electron Transfer Coupling Matrix Element in Diabatic Reactions Reviewed

16. Mitsuo Shoji, Kyohei Hanaoka, Akimasa Sato, Daiki Kondo, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi,

International Journal of Quantum Chemistry, DOI: 10.1002/qua.     page： 24074   2011

An atomistic study on hydrogenation effects toward quality improvement of program/erase cycle of MONOS- type memory Reviewed

4. Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi,

IEICE Transactions   ( E94-C ) page： 693-698   2011

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency Reviewed

3. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu,

Appl. Phys. Lett. 99, Art.     page： 151108   2011

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed

2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh,

Jpn. J. Appl. Phys. 50 Art.     page： 04DD04   2011

Fundamental origin of excellent low-noise property in 3D Si-MOSFETs -Impact of charge-centroid in the channel due to quantum effect on 1/f noise-

2. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori,

2011 Technical Digest of 2011 International Electron Devices Meetings   ( 27 ) page： 7-1-4   2011

First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations

3. K. Yamaguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

Proceeding of 2011 International Conference on Simulation of Semiconductor Processes and Devices     page： 215-217   2011

カリウムイオンエレクトレット帯電劣化メカニズムの第一原理計算による研究

大畑慶記, 洗平昌晃, 石黒巧真, 三屋裕幸, 年吉洋, 芝田 泰, 橋口原, 白石賢二

第８４回応用物理学会秋季学術講演会  2023.9.23 

物質内包空間に存在するfloating電子状態とそのメモリー機能発現の第一原理計算による解明：フラッシュメモリーSiNの場合

七瀧風五, 白石賢二, 押山淳

日本物理学会 第７８回年次大会  2023.9.19 

第一原理計算によるゲルマニウム極薄膜結晶の磁性に関する研究

石原大樹, 洗平昌晃, 山影相, 白石賢二

日本物理学会 第７８回年次大会  2023.9.16 

First Principles Studies on the Defect States in the Gate Dielectrics in GaN MOSFET Invited International conference

Kenji Shiraishi

The 32nd ICDS  2023.9.14 

First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth International conference

Takashi Kuroda, Lisa Mizuno, Shuto Hattori, Kenji Shiraishi

ssdm 2023  2023.9.7 

Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation International conference

Tomoya Nagahashi, Hajime Karasawa, Ryota Horiike, Kenji Shiraishi

ssdm 2023  2023.9.8 

Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices International conference

Masaki Sano, Jun Kojima, Shoichi Onda, Takashi Yoda, Takayuki Ohba, Kenji Shiraishi

ssdm 2023  2023.9.6 

Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth International conference

Souichiro Yamauchi, Ichiro Mizushima, Takashi Yoda, Atushi Oshiyama, Kenji Shiraishi

ssdm 2023  2023.9.6 

First Principles Studies on the Defect States in the Gate Dielectrics in GaN MOSFET International conference

Kenji Shiraishi

WCAM2023  2023.5.9 

カリウムイオンエレクトレット内への炭素混入の影響

桐越大貴,大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,芝田泰,橋口原,白石賢二

第70回応用物理学会春季学術講演会  2023.3.16 

GaNにおけるMgアクセプターの拡散機構の理論的検討

制野かおり押山淳,櫻井亮介,白石賢二

第70回応用物理学会春季学術講演会  2023.3.17 

STT-MRAMにおけるMgO薄膜中の粒界によるデータ保持性能への影響の第一原理計算による解析

森下佳祐,原嶋庸介,洗平昌晃,遠藤哲郎,白石賢二

第28回電子デバイス界面テクノロジー研究会  2023.2.3 

アモルファスSi3N4中のトラップ欠陥の第一原理計算による研究

七瀧風五,押山淳,岩田潤一,松下雄一郎,白石賢二

第28回電子デバイス界面テクノロジー研究会  2023.2.4 

帯電材料カリウムイオンエレクトレットの水素のよる劣化の第一原理計算による研究

大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,柴田泰,橋口原,白石賢二

第28回電子デバイス界面テクノロジー研究会  2023.2.4 

CVD成長環境におけるSiCステップ端でのN原子取り込み機構の理論研究

山内颯一郎,水島一郎,依田孝,押山淳,白石賢二

第22回日本表面真空学会中部支部学術講演会  2022.12.17 

Charge Traps in H Incorporated SiN in 3D NAND Memories International conference

F. Nanataki, A. Oshiyama, K. Shiraishi

53rd IEEE Semiconductor Interface Specialists Conference  2022.12.8 

Physics in Very Shallow Trap Formation at SiC/SiO2 Interfaces International conference

K. Shiraishi, K. Chokawa

53rd IEEE Semiconductor Interface Specialists Conference  2022.12.8 

AlN・InN MOVPE成長におけるTMA・TMI分解経路の理論的解析

長嶋佑哉,赤石大地,新田州吾,草場彰,寒川義裕,白石賢二

第14回ナノ構造エピタキシャル成長講演会  2022.11.24 

MOVPE成長過程におけるTMAとTMI分解に関する第一原計算

長嶋佑哉,赤石大地,新田州吾,草場彰,寒川義裕,白石賢二

第41回電子材料シンポジウム  2022.10.21 

レート方程式による GaN MOVPE の成長シミュレーション

佐野雅季,長嶋佑哉,草場彰,寒川義裕,白石賢二

第41回電子材料シンポジウム  2022.10.21 

Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories International conference

F. Nanataki, J. Iwata, K. Chokawa, M. Araidai, A. Oshiyama, K. Shiraishi

International Conference on Solid State Device and Materials (SSDM2022)  2022.9.28 

Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM International conference

K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi

International Conference on Solid State Device and Materials (SSDM2022)  2022.9.29 

Theoretical Study of the Influence of GaOx Layer on the SiO2/GaN Interface International conference

S. Hattori, A. Oshiyama, S. Miyazaki, H. Watanabe, K. Ueno, R. Tanaka, T. Kondo, S. Takashima, M. Edo, K. Shiraishi

International Conference on Solid State Device and Materials (SSDM2022)  2022.9.28 

カリウムイオンエレクトレット内での水素原子の拡散経路

大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,柴田泰,橋口原,白石賢二

第83回応用物理学会秋季学術講演会  2022.9.21 

磁気トンネル接合内のFe/MgO/Fe構造内の水素不純物が界面垂直磁気異方性に与える影響

名和卓哉,森下佳祐,洗平昌晃,遠藤哲郎,白石賢二

第83回応用物理学会秋季学術講演会  2022.9.21 

第一原理計算によるSiO2/GaN界面の中間層の研究

服部柊人,押山淳,白石賢二,宮崎誠一,渡部平司,上野勝典,田中亮,近藤剣,高島信也,江戸雅晴

第83回応用物理学会秋季学術講演会  2022.9.22 

First-principles study of the effect of hydrogen on potassium-ion electrets International conference

Y. Ohata, M. Araidai, T. Ishiguro, H. Mitsuya, H. Toshiyoshi, Y. Shibata, G. Hashiguchi, K. Shiraishi

9th International Symposium on Control of Semiconductor Interfaces  2022.9.6 

First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

2022.3.24 

カリウムイオンエレクトレットの高性能化の指針と水素の影響の理論検討

大畑慶記，中西徹，長川健太，洗平昌晃，石黒巧真，三屋裕幸，年吉洋，芝田泰，橋口原，白石賢二

第69回応用物理学会春季学術講演会  2022.3.26 

熱力学的解析によるp型GaNのHVPE法におけるキャリアガスの特定

長嶋佑哉，木村友哉，洗平昌晃，長川健太，草場彰，寒川義裕，白石賢二

第69回応用物理学会春季学術講演会  2022.3.25 

強誘電HfO2薄膜の安定性と誘電特性：第一原理計算による検討

牧芳和，新井千慧，洗平昌晃，白石賢二，中山隆史

第69回応用物理学会春季学術講演会  2022.3.24 

4H-SiC/SiO2界面での窒素酸化物およびアンモニアの反応機構の理論的検討

秋山亨，清水紀志，伊藤智徳，影島博之，白石賢二

第69回応用物理学会春季学術講演会  2022.3.24 

GaN/SiO2界面のホールトラップの原因の理論的究明とその対策

服部柊人，長川健太，押山淳，白石賢二

第69回応用物理学会春季学術講演会  2022.3.24 

MgO中の粒界がSTT-MRAMのFe/MgOの界面垂直磁気異方性に与える影響の理論的研究

森下佳祐，原嶋庸介，洗平昌晃，遠藤哲郎，白石賢二

第27回 電子デバイス界面テクノロジー研究会  2022.1.28 

AlN MOVPEにおけるトリメチルアルミニウム分解反応の理論的考察

赤石大地，洗平昌晃，白石賢二

第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

GaN複合空孔の電子構造の第一原理計算による研究

櫻井亮介，長川健太，押山淳，白石賢二

第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

CVD 成長環境下における SiC 微斜面への水素被覆の理論研究

木村友哉，長川健太，押山淳，白石賢二

第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces International conference

T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, K. Shiraishi

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.11 

First-principles study of two-dimensional materials of group IV elements International conference

M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, K. Shiraishi

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

Density Functional Theory study of Step Flow Growth of Gallium Nitride International conference

K. M. Bui, K. Shiraishi, A. Oshiyama

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

First principles studies of the effects of carbon atoms on the potassium-ion electret used in vibration-powered generators International conference

Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

First-Principles Investigation of Hydrogen Adsorption on Stepped SiC Surface during CVD Growth International conference

T. Kimura, K. Chokawa, A. Oshiyama, K. Shiraishi

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

第一原理計算による4H-SiC(0001)表面近傍での炭素空孔の取り込みやすさに関する研究

中島響，醍醐佳明，長川健太，白石賢二

第 21 回 日本表面真空学会中部支部 学術講演会  2021.12.18 

Effects of carbon atoms on the reliability of the potassium-ion electret used in vibration-powered generators International conference

Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi

International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY – (2021 IWDTF) 

Development of Physically Informed Neural Network Potential International conference

S. Ito, M. Araidai, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

First Principles Studies on Atomic and Electronic Structures of VGa-VN divacancies International conference

R. Sakurai, K. Chokawa, A. Oshiyama, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

First-principles studies on the effects of O atoms in the substrate on the oxidation of a vertical Si nanopillar International conference

F. Nanataki, M. Araidai, H. Kageshima, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

First-principles Calculations between Screw Dislocation with Mg, H Impurities on GaN International conference

N. Inoue, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

本当のパワーデバイス材料をデータサイエンスで作るには？

白石賢二

複相機能開拓拠点ワークショップ  2021.11.2 

ニューラルネットワークを用いた新規ペアポテンシャルの開発

伊藤匠哉，洗平昌晃，白石賢二

日本物理学会 2021年秋季大会  2021.9.21 

CVD 成長における SiC 微斜面への水素被覆の理論研究

木村友哉，長川健太，押山淳，白石賢二

第82回応用物理学会秋季学術講演会  2021.9.10 

Kイオンエレクトレットの負電荷蓄積機構及び作製指針の理論的検討 Invited

中西徹，長川健太，洗平昌晃，年吉洋，杉山達彦，橋口原，白石賢二

第82回応用物理学会秋季学術講演会  2021.9.12 

Fe/MgO界面への窒素不純物が磁気異方性とTMRに与える影響について Invited

小川湧太郎，洗平昌晃，遠藤哲郎，白石賢二

第82回応用物理学会秋季学術講演会  2021.9.12 

Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth International conference

T. Kimura, K. Chokawa, A. Oshiyama and K. Shiraishi

2021 International Conference on Solid State Devices and Materials (SSDM2021) 

First Principles Studies of Impurity Dislocation Complexes in GaN International conference

Kenji Shiraishi

THERMEC'2021 INTERNATIONAL CONFERENCE ON PROCESSING &MANUFACTURING OF ADVANCED MATERIALS 

Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices International conference

G.Fujita, T.shiokawa, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

ISANN 2013 

SiC酸化により引き起こされるSi欠陥への第一原理計算からの考察

長川健太、神谷克政、洗平昌晃、白石賢二

先進パワー半導体研究会 

Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials International conference

T.Shiokawa, G.Fujita, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

ISANN 2013 

Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories International conference

K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi and K. Shiraishi

224th Meeting of Electrochemical Society 

4Ｈ-Ｓｉｃの熱酸化速度の理論的研究-Ｓｉ面とＣ面の酸化速度の相違-

丸山翔太郎、遠藤賢太郎、長川健太、神谷克政、白石賢二

応用物理学会秋季学術講演会 

Intrinsic SiC Oxidation Problems Obtained by First Principle Calculations International conference

K. Shiraishi, K. Chokawa and K. Kamiya

International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) International conference

K. Shiraishi, M.Y. Yang, S.Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B. Magyari-Kope, and Y. Nishi

2013 International Conference on Solid State Devices and Materials 

超格子材料を用いた低電力動作相変化デバイス

森川貴博、大柳孝純、木下勝治、田井光春、秋田憲一、高浦則克、加藤重徳、洗平昌晃、神谷克政、山本貴博、白石賢二

応用物理学会秋季学術講演会 

4Ｈ-Ｓｉｃ表面のＮＯ初期酸化過程の理論的検討

遠藤賢太郎、丸山翔太郎、加藤重徳、神谷克政、白石賢二

応用物理学会秋季学術講演会 

First principles material design toward nano-scale memory functional devices triggered by carrier injection International conference

Kenji Shiraishi

BIT's 2nd Annual World Congress of Advanced Materials-2013 

First Principles Studies on the Atomistic Processes of GaN Metal Organic Vapor Phase Epitaxy (MOVPE) International conference

Kenji Shiraishi

V-ASET2021 5th Edition of Applied Science, Engineering and Technology Virtual  2021.12.13 

First Principles Guiding Principles for the Switching Process in Oxide ReRAM International conference

3. Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi,

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology 

On-Off Switching Mechanism of Oxide Based ReRAM by Ab Initio Electronic Structure Calculations International conference

Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Hiroyoshi Momida, Blanka Magyari-Köpe, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi

2nd International Workshop on Resistive RAM, 

Computational Study toward Micro Electronics Engineering International conference

5. Kenji Shiraishi, Keita Yamaguchi, Moon Young Yang, Seong-Geon Park, Katsumasa Kamiya, Yasuteru Shigeta, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi

2012 28th International Conference on Microelectronics, 

Computational Science Studies toward Future Nano-Devices International conference

K. Shiraishi

WIMNACT Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology 

Guiding Principle of Highly Scalable MONOS-Type Memory International conference

1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

220th Electrochemical Society Meeting,