Updated on 2024/03/27

写真a

 
USAMI Noritaka
 
Organization
Graduate School of Engineering Materials Process Engineering 2 Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Materials Science and Engineering
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor (Engineering) ( 1998.1   The University of Tokyo ) 

Research Interests 4

  1. crystal growth

  2. multicrystalline informatics

  3. defect engineering

  4. solar cell

Research Areas 3

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  2. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  3. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 4

  1. 多結晶材料情報学の学理構築と高品質多結晶材料創製

  2. 脱炭素社会の早期実現に向けた次世代太陽電池に関する研究

  3. 非真空プロセスによるシリコン系多元混晶材料のエピタキシャル成長

  4. 量子計算機用高品質半導体基板創製に関する研究

Research History 10

  1. Nagoya University   Professor

    2013.4

  2. Nagoya University   Professor

    2022.4

  3. Cabinet office, Government of Japan   Council for Science, Technology, and Innovation   Senior Science and Technology Policy Fellow

    2018.4 - 2020.3

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    Country:Japan

  4. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics   Professor

    2017.4 - 2027.3

  5. 筑波大学大学院数理物質科学研究科非常勤講師

    2015.10 - 2016.3

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    Country:Japan

  6. Visiting Professor, Institute of Fluid Science, Tohoku University

    2013.5 - 2017.3

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    Country:Japan

  7. Tohoku University   Institute for Materials Research   Associate professor

    2007.4 - 2013.3

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    Country:Japan

  8. Tohoku University   Institute for Materials Research   Associate Professor

    2000.2 - 2007.3

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    Country:Japan

  9. Technical University of Dresden   Institute for Applied Photophysics   Visiting Researcher

    1998.3 - 1999.1

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    Country:Germany

  10. The University of Tokyo   Research Center for Advanced Science and Technology   Assistant

    1994.7 - 2000.1

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    Country:Japan

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Education 3

  1. The University of Tokyo   Graduate School, Division of Engineering

    1993.4 - 1994.7

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    Country: Japan

  2. The University of Tokyo   Graduate School, Division of Engineering

    1991.4 - 1993.3

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    Country: Japan

  3. The University of Tokyo   Faculty of Engineering

    1987.4 - 1991.3

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    Country: Japan

Professional Memberships 6

  1. The Japan Photovoltaic Society   Director, Former President

    2020.10

  2. The Japan Society of Applied Physics   Director

    1991.3

  3. The Japan Institute of Metals and Materials

  4. The Japan Association of Crystal Growth

  5. Material Research Society

  6. 日本MRS水素科学技術連携研究会

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Committee Memberships 30

  1. 11th International Workshop on Modeling in Crystal Growth   Member of the international advisory committee  

    2023.12   

  2. 半導体の結晶成長と加工および評価に関する産学連携委員会   委員  

    2023.4   

  3. The 35th International Photovoltaic Science and Engineering Conference   プログラム副委員長  

    2023.4 - 2025.3   

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    Committee type:Other

  4. 新潟大学カーボンニュートラル融合技術研究センター   運営委員  

    2022.10   

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    Committee type:Other

  5. 10th International Workshop on Modeling in Crystal Growth   Member of the International Advisory Committee  

    2022.4 - 2023.3   

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    Committee type:Other

  6. Indo-Japan Joint Workshop on Photovoltaics   Convenor  

    2022.4 - 2023.3   

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    Committee type:Academic society

  7. 3rd International Symposium on Crytal Growth Processes and Devices   Member of Scientific Advisory Committee  

    2022.4 - 2023.3   

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    Committee type:Academic society

  8. NIMS次期拠点プロジェクト   外部評価委員  

    2021.10   

  9. APAC Silicide 2022   Program committee member  

    2021.9 - 2023.3   

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    Committee type:Academic society

  10. 宮﨑大学テニュアトラック教員選考評価委員会   委員  

    2021.9   

  11. 日本学術振興会産学協力委員会R032産業イノベーションのための結晶成長委員会   運営委員  

    2021.7   

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    Committee type:Academic society

  12. 9th International Symposium on Control of Semiconductor Interfaces   International Program Committee  

    2021.4 - 2023.3   

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    Committee type:Academic society

  13. 多結晶材料情報学応用技術研究会   座長  

    2021.4 - 2023.3   

  14. 新エネルギー・産業技術総合開発機構   技術委員  

    2021.1 - 2026.3   

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    Committee type:Other

  15. 次世代の太陽光発電シンポジウム   プログラム委員  

    2020.10   

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    Committee type:Academic society

  16. 日本太陽光発電学会次世代セル・モジュール分科会   幹事  

    2020.10   

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    Committee type:Academic society

  17. International Advisory Committee of the International Photovoltaic Science and Engineering Conference   member  

    2020.8   

  18. International Advisory Committee of World Conference on Photovoltaic Energy Conversion   member  

    2020.8   

  19. The 22nd International Vacuum Congress   Chair of sub-program committee, Electronic Materials and Processing  

    2020.4 - 2023.3   

  20. 第8回シリコン材料の先端科学と技術国際シンポジウム   実行委員  

    2020.4 - 2023.3   

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    Committee type:Academic society

  21. The 8th Asian Conference on Crystal Growth and Crystal Technology   Co-Chair of Program and Award Selection Committee  

    2019 - 2021.3   

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    Committee type:Other

  22. The 33rd International Photovoltaic Science and Engineering Conference   General Chair of Organizing Committee  

    2018.12 - 2023.3   

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    Committee type:Other

  23.   Member of the international advisory committee  

    2018.4 - 2022.4   

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    Committee type:Academic society

  24. The 10th International Workshop on Crystalline Silicon for Solar Cells   Co-Chair of the organizing committee  

    2016.4 - 2018.4   

  25. 東北大学金属材料研究所研究部共同利用委員会   委員  

    2016.4 - 2018.3   

  26. 東北大学産学連携先端材料研究開発センター運営評議委員会   委員  

    2015.4 - 2019.3   

  27. 日本学術振興会結晶加工と評価技術第145委員会   幹事  

    2013 - 2023.3   

  28. 日本学術振興会次世代の太陽光発電システム第175委員会   副委員長  

    2009 - 2020.3   

  29. International Advisory Committee of the International Workshop on Crystalline Silicon for Solar Cells   member  

    2006.10   

  30. 日本学術振興会結晶成長の科学と技術第161委員会   幹事長代理  

    2000 - 2021.3   

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Awards 11

  1. 科学技術分野の文部科学大臣表彰 科学技術賞(研究部門)

    2022.4   文部科学省  

  2. 応用物理学会フェロー

    2021.9   応用物理学会   シリコン系材料の多様な結晶成長とデバイス応用に関する研究

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    Award type:Award from Japanese society, conference, symposium, etc. 

  3. Photo & Illustration Contest 最優秀賞

    2018.9   応用物理学会   Semicondoctor Nanoflower

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  4. SiliconPV Award

    2018.3   SiliconPV 2018   3D Visualization and Analysis of Dislocation Clusters in Multicrystalline Si Ingot by Approach of Data Science

    Y. Hayama, T. Muramatsu, T. Matsumoto, K. Kutsukake, H. Kudo, N. Usami

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    Award type:Award from international society, conference, symposium, etc.  Country:Switzerland

  5. イノベイティブPV論文賞

    2017.7   独立行政法人日本学術振興会   多結晶材料情報学によるスマートシリコンインゴットの創製に向けて

    "宇佐美徳隆、羽山優介、髙橋勲、松本哲也、工藤博章、横井達矢、松永克志、沓掛健太朗、大野裕 "

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  6. The best poster award

    2012.6  

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    Country:United States

  7. The best paper award

    2009.11  

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    Country:Korea, Republic of

  8. インテリジェント・コスモス奨励賞

    2008.8   財団法人インテリジェント・コスモス学術振興財団  

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    Country:Japan

  9. 安藤博記念学術奨励賞

    2000.7   一般財団法人安藤研究所  

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    Country:Japan

  10. Engineering Conference Foundation Fellowship on Silicon Heterostructrues

    1997.9  

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    Country:United States

  11. Young Researcher Award of International Conference on Solid State Devices and Materials

    1993.8  

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    Country:Japan

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Papers 559

  1. Exploring mc-Silicon Wafers: Utilizing Machine Learning to Enhance Wafer Quality Through Etching Studies Invited Reviewed International coauthorship

    Madhesh Raji, Sreeja Balakrishnapillai Suseela, Srinivasan Manikkam, Gowthami Anbazhagan, Kentaro Kutsukake, Keerthivasan Thamotharan, Ramadoss Rajavel, Noritaka Usami, Ramasamy Perumalsamy

    Crystal Research and Technology     page: 2300279-1 - 2300279-12   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

  2. Core-shell yarn-structured triboelectric nanogenerator for harvesting both waterdrop and biomechanics energies

    Wang, HT; Kurokawa, Y; Zhang, JH; Gotoh, K; Liu, X; Miyamoto, S; Usami, N

    APPLIED PHYSICS EXPRESS   Vol. 17 ( 1 )   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ad1f06

    Web of Science

  3. Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation Reviewed International coauthorship

    Keerthivasan, T; Anbu, G; Srinivasan, M; Kojima, T; Rath, JK; Usami, N; Vijayan, N; Madhesh, R; Balaji, C; Singh, M; Rao, C; Ramasamy, P

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   Vol. 35 ( 1 )   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s10854-023-11750-7

    Web of Science

  4. Pioneering Multicrystalline Informatics Invited Reviewed

    Noritaka USAMI

    JSAP Review     2024.1

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    Authorship:Lead author, Last author, Corresponding author   Language:English  

  5. Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation Reviewed International journal

    Hara Kosuke O., Takagaki Ryota, Arimoto Keisuke, Usami Noritaka

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 966   2023.12

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jallcom.2023.171588

    Web of Science

  6. Free-Standing Electrode and Fixed Surface Tiny Electrode Implemented Triboelectric Nanogenerator with High Instantaneous Current Reviewed International coauthorship

    Haitao Wang, Yasuyoshi Kurokawa, Jia Wang, Wentao Cai, Jia-Han Zhang, Shinya Kato, Noritaka Usami

    Small     page: 2308531-1 - 2308531-9   2023.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/smll.202308531

  7. Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling The Microscopic Root Cause of Dislocation Generation Reviewed

    Kenta Yamakoshi, Yutaka Ohno, Kentaro Kutsukake, Takuto Kojima, Tatsuya Yokoi, Hideto Yoshida, Hiroyuki Tanaka, Xin Liu, Hiroaki Kudo, Noritaka Usami

    Advanced Materials     page: 2308599-1 - 2308599-13   2023.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/adma.202308599

  8. Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts Invited Reviewed International journal

    Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani and Noritaka Usami

    Nanotechnology     2023.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1088/1361-6528/ad115d

  9. Nanoscale Size Control of Si Pyramid Texture for Perovskite/Si Tandem Solar Cells Enabling Solution‐Based Perovskite Top‐Cell Fabrication and Improved Si Bottom‐Cell Response Reviewed International journal

    Yuqing Li, Hitoshi Sai, Calum McDonald, Zhihao Xu, Yasuyoshi Kurokawa, Noritaka Usami, Takuya Matsui

    Advanced Materials Interfaces     page: 2300504-1 - 2300504-9   2023.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/admi.202300504

  10. Improvement of passivation performance of silicon nanocrystal/silicon oxide compound layer by two-step hydrogen plasma treatment Reviewed International journal

    Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami

    Solar Energy Materials and Solar Cells   Vol. 262   page: 112358-1 - 112358-6   2023.9

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.solmat.2023.112538

  11. Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing Reviewed International journal

    Kurokawa Yasuyoshi, Sato Kaisei, Shibata Keisuke, Kato Shinya, Miyamoto Satoru, Gotoh Kazuhiro, Itoh Takashi, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 163   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2023.107552

    Web of Science

  12. Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiO (x) /Si heterostructures by photoluminescence imaging: impact of metallization on passivation performance Reviewed International journal

    Fukaya Shohei, Gotoh Kazuhiro, Matsui Takuya, Sai Hitoshi, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SK )   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acc813

    Web of Science

  13. Impact of B2H6 plasma treatment on contact resistivity in silicon heterojunction solar cells Reviewed International journal

    Gotoh Kazuhiro, Ozaki Ryo, Morimura Motoo, Tanaka Aki, Iseki Yoshiko, Nakamura Kyotaro, Muramatsu Kazuo, Kurokawa Yasuyoshi, Ohshita Yoshio, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SK )   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acc953

    Web of Science

  14. 3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon Reviewed International journal

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami

    APL Machine Learning   Vol. 1   page: 036106-1 - 036106-9   2023.7

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    Authorship:Last author, Corresponding author   Language:English  

    DOI: https://doi.org/10.1063/5.0156044

  15. A machine learning-based prediction of crystal orientations for multicrystalline materials Reviewed International journal

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami

    APL Machine Learning   Vol. 1   page: 026113-1 - 026113-9   2023.5

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/5.0138099

  16. Fabrication of light trapping structures specialized for near-infrared light by nanoimprinting for the application to thin crystalline silicon solar cells Reviewed International journal

    Kimata Yuto, Gotoh Kazuhiro, Miyamoto Satoru, Kato Shinya, Kurokawa Yasuyoshi, Usami Noritaka

    DISCOVER NANO   Vol. 18 ( 1 )   2023.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-023-03840-6

    Web of Science

  17. Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal

    Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami and Yasuyoshi Kurokawa

    Japanese Journal of Applied Physics   Vol. 62 ( SC ) page: SC1074   2023.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acb779

    Web of Science

  18. Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer Reviewed International journal

    Haitao Wang, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Shinya Kato, Shigeru Yamada, Takashi Itoh and Noritaka Usami

    Japanese Journal of Applied Physics   Vol. 62 ( SC ) page: SC1032   2023.4

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acaca7

    Web of Science

  19. The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation Reviewed International coauthorship International journal

    T. Keerthivasan, Xin Liu, M. Srinivasan, Noritaka Usami, G. Anbu, G. Aravindan, P. Ramasamy

    Journal of Crystal Growth   Vol. 607   page: 127130-1 - 127130-7   2023.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2023.127130

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  20. Bayesian optimization of hydrogen plasma treatment in silicon quantum dot multilayer and application to solar cells Reviewed International journal

    Fuga Kumagai, Kazuhiro Gotoh, Satoru Miyamoto, Shinya Kato, Kentaro Kutsukake, Noritaka Usami and Yasuyoshi Kurokawa

    Discover Nano   Vol. 43   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-023-03821-9

  21. Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films Reviewed International journal

    H. Kojima, T. Nishihara, K. Gotoh, N. Usami, T. Hara, K. Nakamura, Y. Ohshita, and A. Ogura

    ECS Journal of Solid State Science and Technology   Vol. 12 ( 1 ) page: 015003   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/acb4bb

    Web of Science

  22. Influence of post-oxidizing treatment on passivation performance on the spin-coated titanium oxide films on crystalline silicon Reviewed International journal

    Thin Solid Films   Vol. 764   page: 139597   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2022.139597

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  23. Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiOx/Si heterostructures by photoluminescence imaging: Impact of metallization on passivation performance Invited Reviewed International journal

    Shohei Fukaya, Kazuhiro Gotoh, Takuya Matsui, Hitoshi Sai, Yasuyoshi Kurokawa, Noritaka Usami

    Japanese Journal of Applied Physics     2023

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    Authorship:Last author   Language:English  

  24. Impurity analysis of the effect of partial replacement of retort with an insulation material on mc-silicon grown in directional solidification furnace: Computational Modeling Reviewed International coauthorship International journal

    T. Keerthivasan, X. Liu, M. Srinivasan, N. Usami, G. Aravindan, P. Ramasamy

    Journal of Crystal Growth   Vol. 599   page: 126892   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2022.126892

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  25. Analysis of grain growth behavior of multicrystalline Mg2Si Reviewed International journal

    Deshimaru Takumi, Yamakoshi Kenta, Kutsukake Kentaro, Kojima Takuto, Umehara Tsubasa, Udono Haruhiko, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SD )   2022.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/aca032

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  26. Nanopyramid Texture Formation by One-Step Ag-Assisted Solution Process for High-Efficiency Monocrystalline Si Solar Cells Reviewed International journal

    Li Yuqing, Sai Hitoshi, Matsui Takuya, Xu Zhihao, Nguyen Van Hoang, Kurokawa Yasuyoshi, Usami Noritaka

    SOLAR RRL   Vol. 6 ( 11 )   2022.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/solr.202200707

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  27. Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate Reviewed International journal

    Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka and Noritaka Usami

    Scientific Reports   Vol. 12 ( 1 )   2022.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-022-19122-7

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  28. Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model Reviewed International journal

    Fukuda Yusuke, Kutsukake Kentaro, Kojima Takuto, Ohno Yutaka, Usami Noritaka

    JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 2 )   2022.7

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0086193

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  29. Estimation of Crystal Orientation of Grains on Polycrystalline Silicon Substrate by Recurrent Neural Network Reviewed International journal

    Kato Hikaru, Kamibeppu Soichiro, Kojima Takuto, Matsumoto Tetsuya, Kudo Hiroaki, Takeuchi Yoshinori, Kutsukake Kentaro, Usami Noritaka

    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING   Vol. 17 ( 11 ) page: 1685 - 1687   2022.7

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/tee.23676

    Web of Science

  30. Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal

    Kurokawa Yasuyoshi, Yoshino Takamasa, Gotoh Kazuhiro, Miyamoto Satoru, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac4077

    Web of Science

  31. Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2 Invited Reviewed International journal

    Fujiwara Michinobu, Takahashi Kazuma, Nakagawa Yoshihiko, Gotoh Kazuhiro, Itoh Takashi, Kurokawa Yasuyoshi, Usami Noritaka

    AIP ADVANCES   Vol. 12 ( 4 )   2022.4

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0083812

    Web of Science

  32. Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed

    Yamashita Yudai, Takayanagi Kaori, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    ACS APPLIED MATERIALS & INTERFACES   Vol. 14 ( 11 ) page: 13828 - 13835   2022.3

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.1c23070

    Web of Science

  33. Effects of grain boundary structure and shape of the solid-liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal

    Fukuda Yusuke, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka

    CRYSTENGCOMM   Vol. 24 ( 10 ) page: 1948 - 1954   2022.3

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    DOI: 10.1039/d1ce01573g

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  34. Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed International journal

    Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, and Noritaka Usami

    ACS Omega   Vol. 7 ( 8 ) page: 6665 - 6673   2022.3

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    DOI: 10.1021/acsomega.1c06018

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  35. Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal

    Tsubata Ryohei, Gotoh Kazuhiro, Matsumi Masashi, Wilde Markus, Inoue Tetsuya, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    ACS APPLIED NANO MATERIALS   Vol. 5 ( 2 )   2022.2

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    DOI: 10.1021/acsanm.1c03355

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  36. Zn1-x Gex Oy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed International journal

    Yudai Yamashita, Kaori Takayanagi, Kazuhiro Gotoh, Kaoru Toko, Noritaka Usami, and Takashi Suemasu

    ACS Appl. Mater. Interfaces     2022.2

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  37. Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal

    Japanese Journal of Applied Physics     2022.2

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  38. Effects of grain boundary structure and shape of the solid–liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal

    Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami

    CrystEngComm     2022.2

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    DOI: doi.org/10.1039/d1ce01573g

  39. Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal

    ACS Appl. Nano Mater.   Vol. 5 ( 2 ) page: 1820 - 187   2022.1

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    DOI: doi.org/10.1021/acsanm.1c03355

  40. Fractal dimension analogous scale-invariant derivative of Hirsch's index Reviewed International journal

    Fujita Yuji, Usami Noritaka

    APPLIED NETWORK SCIENCE   Vol. 7 ( 1 )   2022.1

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    DOI: 10.1007/s41109-021-00443-x

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  41. Fine Line Screen-Printing Aluminum for Front side p(+) Metallization of High Efficiency Solar Cells Reviewed International coauthorship International journal

    Tsuji Kosuke, Suzuki Shota, Dhamrin Marwan, Adrian Adrian, Buck Thomas, Usami Noritaka

    11TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2021)   Vol. 2487   2022

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    DOI: 10.1063/5.0089217

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  42. Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces Reviewed International journal

    Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED SURFACE SCIENCE   Vol. 567   2021.11

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    DOI: 10.1016/j.apsusc.2021.150799

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  43. Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method Reviewed International journal

    Nakagawa Yoshihiko, Takahashi Kazuma, Fujiwara Michinobu, Hara Kosuke O., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Suemasu Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 10 )   2021.10

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    DOI: 10.35848/1347-4065/ac23ec

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  44. Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers International journal

    Nakagawa Yuta, Gotoh Kazuhiro, Inoue Tetsuya, Kurokawa Yasuyoshi, Usami Noritaka

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 218 ( 19 )   2021.10

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    DOI: 10.1002/pssa.202100296

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  45. Bayesian Optimization of Passivating Contacts for Crystalline Silicon Solar Cells Invited Reviewed International journal

    ECS Meeting Abstracts     2021.10

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    DOI: doi.org/10.1149/MA2021-0213641mtgabs

  46. Contact control of Al/Si interface of Si solar cells by local contact opening method Reviewed International coauthorship International journal

    Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Adrian Adrian, Peng Zih-Wei, Buck Thomas, Usami Noritaka

    MATERIALS CHEMISTRY AND PHYSICS   Vol. 270   2021.9

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    DOI: 10.1016/j.matchemphys.2021.124833

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  47. Application of Bayesian optimization for high-performance TiOx/SiOy/c-Si passivating contact Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 230   2021.9

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    DOI: 10.1016/j.solmat.2021.111251

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  48. Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices Reviewed International journal

    Nezasa Ryota, Gotoh Kazuhiro, Kato Shinya, Miyamoto Satoru, Usami Noritaka, Kurokawa Yasuyoshi

    ENERGIES   Vol. 14 ( 15 )   2021.8

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    DOI: 10.3390/en14154538

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  49. Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning Reviewed International journal

    Kutsukake Kentaro, Mitamura Kazuki, Usami Noritaka, Kojima Takuto

    APPLIED PHYSICS LETTERS   Vol. 119 ( 3 )   2021.7

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    DOI: 10.1063/5.0049847

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  50. Occurrence Prediction of Dislocation Regions in Photoluminescence Image of Multicrystalline Silicon Wafers Using Transfer Learning of Convolutional Neural Network Reviewed International journal

    Kudo Hiroaki, Matsumoto Tetsuya, Kutsukake Kentaro, Usami Noritaka

    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES   Vol. E104A ( 6 ) page: 857 - 865   2021.6

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    DOI: 10.1587/transfun.2020IMP0010

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  51. Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry Reviewed International journal

    Gotoh Kazuhiro, Miura Hiroyuki, Shimizu Ayako, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    DOI: 10.35848/1347-4065/abd6dd

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  52. Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2 Reviewed International journal

    Aonuki Sho, Xu Zhihao, Yamashita Yudai, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Filonov Andrew B., Nikitsiuk Siarhei A., Migas Dmitri B., Shohonov Denis A., Suemasu Takashi

    THIN SOLID FILMS   Vol. 724   2021.4

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    DOI: 10.1016/j.tsf.2021.138629

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  53. Versatile fabrication of a passivation material, solute PEDOT:PSS, for a c-Si substrate using alcoholic solvents Reviewed International coauthorship International journal

    Nguyen Van Hoang, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka

    SUSTAINABLE ENERGY & FUELS   Vol. 5 ( 3 ) page: 666 - 670   2021.2

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    DOI: 10.1039/d0se01700k

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  54. Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 2 )   2021.2

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    DOI: 10.35848/1882-0786/abd869

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  55. Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

    Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Hara Tomohiko, Ozaki Ryo, Morimura Motoo, Shimizu Ayako, Nakamura Kyotaro, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 2 )   2021.2

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    DOI: 10.35848/1347-4065/abdd02

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  56. Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects International coauthorship International journal

    Patricia Krenckel , Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe and Noritaka Usami

    Crystals   Vol. 11 ( 2 ) page: 1 - 10   2021.2

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    DOI: 10.3390/cryst11020090

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  57. Origin of recombination activity of non-coherent sigma 3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots Reviewed International journal

    Ohno Yutaka, Tamaoka Takehiro, Yoshida Hideto, Shimizu Yasuo, Kutsukake Kentaro, Nagai Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 ) page: .   2021.1

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  58. Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers Reviewed International journal

    Gotoh Kazuhiro, Mochizuki Takeya, Hojo Tomohiko, Shibayama Yuki, Kurokawa Yasuyoshi, Akiyama Eiji, Usami Noritaka

    CURRENT APPLIED PHYSICS   Vol. 21   page: 36 - 42   2021.1

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    DOI: 10.1016/j.cap.2020.10.002

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  59. Realization of the Crystalline Silicon Solar Cell Using Nanocrystalline Transport Path in Ultra-thin Dielectrics for Reinforced Passivating Contact

    Tsubata Ryohei, Gotoh Kazuhiro, Inoue Tetsuya, Kurokawa Yasuyoshi, Usami Noritaka

    2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 908 - 911   2021

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    DOI: 10.1109/PVSC43889.2021.9519096

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  60. The impact of highly excessive PbI2 on the correlation of MAPbI(3) perovskite morphology and carrier lifetimes Reviewed International coauthorship International journal

    Van Hoang Nguyen, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 41 ) page: 14481 - 14489   2020.11

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    DOI: 10.1039/d0tc04071a

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  61. Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots Reviewed International journal

    Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 10 )   2020.10

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    DOI: 10.35848/1882-0786/abbb1c

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  62. Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation Reviewed International journal

    Mitamura Kazuki, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

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    DOI: 10.1063/5.0017823

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  63. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask Reviewed International coauthorship International journal

    Nguyen V. H., Novikov A., Shaleev M., Yurasov D., Semma M., Gotoh K., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 114   2020.8

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    DOI: 10.1016/j.mssp.2020.105065

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  64. Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation Reviewed International journal

    Hara Kosuke O., Takizawa Shuhei, Yamanaka Junji, Usami Noritaka, Arimoto Keisuke

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 113   2020.7

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    DOI: 10.1016/j.mssp.2020.105044

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  65. Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells Reviewed International coauthorship International journal

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    DOI: 10.1063/5.0005763

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  66. Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction Reviewed International journal

    Semma Masanori, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    AIP ADVANCES   Vol. 10 ( 6 )   2020.6

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    DOI: 10.1063/5.0009994

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  67. Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal

    Aonuki Sho, Yamashita Yudai, Sato Takuma, Xu Zhihao, Gotoh Kazuhiro, Toko Kaoru, Terai Yoshikazu, Usami Noritaka, Suemasu Takashi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

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  68. Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells Reviewed International journal

    Kimura Yuki, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 )   2020.5

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    DOI: 10.35848/1882-0786/ab8727

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  69. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers Reviewed International coauthorship International journal

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    JOURNAL OF CRYSTAL GROWTH   Vol. 535   2020.4

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    DOI: 10.1016/j.jcrysgro.2020.125522

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  70. 3D visualization of growth interfaces in cast Si ingot using inclusions distribution Reviewed International coauthorship International journal

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    JOURNAL OF CRYSTAL GROWTH   Vol. 535   2020.4

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    DOI: 10.1016/j.jcrysgro.2020.125535

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  71. Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering Reviewed International journal

    Nemoto T., Matsuno S., Sato T., Gotoh K., Mesuda M., Kuramochi H., Toko K., Usami N., Suemasu T.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab69dc

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  72. Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6b79

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  73. Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab70a0

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  74. Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.7567/1347-4065/ab6346

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  75. Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation Reviewed International journal

    Yoshino Takamasa, Nakagawa Yoshihiko, Kimura Yuki, Fujiwara Michinobu, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6b78

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  76. Fabrication of group IV semiconductor alloys on Si substrate applying Al paste with screen-printing Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6e0b

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  77. Effects of evaporation vapor composition and post-annealing conditions on carrier density of undoped BaSi2 evaporated films Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.7567/1347-4065/ab6418

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  78. Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications Reviewed International coauthorship International journal

    Mai Thi Kieu Lien, Usami Noritaka

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B   Vol. 34 ( 8 )   2020.3

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    DOI: 10.1142/S021797922050068X

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  79. Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates International coauthorship

    Hainey Mel Jr., Zhou Eddie (Chenhui), Viguerie Loic, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 533   2020.3

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    DOI: 10.1016/j.jcrysgro.2019.125441

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  80. Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Ogura Shohei, Wilde Markus, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    DOI: 10.1116/1.5134720

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  81. Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts Reviewed International journal

    Nakagawa Yuta, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    DOI: 10.1116/1.5134719

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  82. Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy International coauthorship

    Montes A., Eijt S. W. H., Tian Y., Gram R., Schut H., Suemasu T., Usami N., Zeman M., Serra J., Isabella O.

    JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 8 )   2020.2

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    DOI: 10.1063/1.5126264

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  83. Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer Reviewed International journal

    Akaishi Ryushiro, Kitazawa Kohei, Gotoh Kazuhiro, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    NANOSCALE RESEARCH LETTERS   Vol. 15 ( 1 )   2020.2

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    DOI: 10.1186/s11671-020-3272-8

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  84. Work function of indium oxide thin films on p-type hydrogenated amorphous silicon

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    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 124 - 127   2020

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  85. Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots

    Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka

    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 2340 - 2340   2020

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  86. Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts

    Tsubata Ryohei, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 969 - 972   2020

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  87. Application of artificial neural network to optimize sensor positions for accurate monitoring: an example with thermocouples in a crystal growth furnace Reviewed International journal

    Boucetta Abderahmane, Kutsukake Kentaro, Kojima Takuto, Kudo Hiroaki, Matsumoto Tetsuya, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

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    DOI: 10.7567/1882-0786/ab52a9

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  88. Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures

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    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 216 ( 22 )   2019.11

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    DOI: 10.1002/pssa.201900495

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  89. Mossbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer Reviewed

    Yoshida Yutaka, Watanabe Tomio, Ino Yuji, Kobayashi Masashi, Takahashi Isao, Usami Noritaka

    HYPERFINE INTERACTIONS   Vol. 240 ( 1 )   2019.9

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    DOI: 10.1007/s10751-019-1651-2

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  90. Hydrogen concentration at a-Si:H/c-Si heterointerfaces-The impact of deposition temperature on passivation performance

    Gotoh Kazuhiro, Wilde Markus, Kato Shinya, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    AIP ADVANCES   Vol. 9 ( 7 )   2019.7

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    DOI: 10.1063/1.5100086

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  91. Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen International coauthorship

    Xu Zhihao, Shohonov Denis A., Filonov Andrew B., Gotoh Kazuhiro, Deng Tianguo, Honda Syuta, Toko Kaoru, Usami Noritaka, Migas Dmitri B., Borisenko Victor E., Suemasu Takashi

    PHYSICAL REVIEW MATERIALS   Vol. 3 ( 6 )   2019.6

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    DOI: 10.1103/PhysRevMaterials.3.065403

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  92. Evidence of solute PEDOT:PSS as an efficient passivation material for fabrication of hybrid c-Si solar cells Reviewed International journal

    Van Hoang Nguyen, Kato Shinya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    SUSTAINABLE ENERGY & FUELS   Vol. 3 ( 6 ) page: 1448 - 1454   2019.6

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    DOI: 10.1039/c9se00093c

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  93. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures International coauthorship

    Ota Yushi, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    DOI: 10.7567/1347-4065/ab003b

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  94. Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste Reviewed International journal

    Fukami Shogo, Nakagawa Yoshihiko, Hainey Mel E. Jr., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Nakahara Masahiro, Dhamrin Marwan, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    DOI: 10.7567/1347-4065/ab00e5

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  95. Local Structure of High Performance TiOx Electron-Selective Contact Revealed by Electron Energy Loss Spectroscopy Reviewed

    Mochizuki Takeya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Yamamoto Takahisa, Usami Noritaka

    ADVANCED MATERIALS INTERFACES   Vol. 6 ( 3 )   2019.2

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    DOI: 10.1002/admi.201801645

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  96. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy Reviewed

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafb26

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  97. 3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science Reviewed

    Hayama Yusuke, Matsumoto Tetsuya, Muramatsu Tetsuro, Kutsukake Kentaro, Kudo Hiroaki, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 189   page: 239-244   2019.1

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    DOI: 10.1016/j.solmat.2018.06.008

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  98. Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

    Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Fukami Shogo, Dhamrin Manvan, Usami Noritaka

    MRS ADVANCES   Vol. 4 ( 13 ) page: 749 - 754   2019

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    DOI: 10.1557/adv.2019.15

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  99. Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts Reviewed

    Lee Hyunju, Kamioka Takefumi, Usami Noritaka, Ohshita Yoshio

    MRS ADVANCES   Vol. 4 ( 13 ) page: 769-775   2019

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    DOI: 10.1557/adv.2019.164

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  100. Significant improvement on electrical properties of BaSi2 due to atomic H passivation by radio-frequency plasma Reviewed

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 12-14   2019

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  101. Fine Line Al Printing on Narrow Point Contact Opening for Front Side Metallization Reviewed

    Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Peng Zih-Wei, Buck Thomas, Usami Noritaka

    9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019)   Vol. 2147   2019

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    DOI: 10.1063/1.5123846

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  102. Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift Reviewed International coauthorship

    Takeda K., Yoneda J., Otsuka T., Nakajima T., Delbecq M. R., Allison G., Hoshi Y., Usami N., Itoh K. M., Oda S., Kodera T., Tarucha S.

    NPJ QUANTUM INFORMATION   Vol. 4   2018.10

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    DOI: 10.1038/s41534-018-0105-z

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  103. Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots Reviewed

    Muramatsu Tetsuro, Hayama Yusuke, Kutsukake Kentaro, Maeda Kensaku, Matsumoto Tetsuya, Kudo Hiroaki, Fujiwara Kozo, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 499   page: 62-66   2018.10

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    DOI: 10.1016/j.jcrysgro.2018.07.028

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  104. Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates Reviewed

    Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka

    THIN SOLID FILMS   Vol. 663   page: 14-20   2018.10

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    DOI: 10.1016/j.tsf.2018.08.004

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  105. Activation mechanism of TiOx passivating layer on crystalline Si

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 10 )   2018.10

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    DOI: 10.7567/APEX.11.102301

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  106. Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF09

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  107. Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells

    Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB21

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  108. Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed

    Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF08

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  109. Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB12

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  110. Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

    Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB04

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  111. Photovoltaic Science and Engineering FOREWORD

    Matsubara Koji, Yamada Akira, Minemoto Takashi, Itoh Takashi, Arafune Koji, Fujiwara Hiroyuki, Hayase Shuzi, Hiramoto Masahiro, Hishikawa Yoshihiro, Imaizumi Mitsuru, Ito Masakazu, Kaizuka Izumi, Kato Takuya, Komoto Keiichi, Kubo Takaya, Maitani Masato, Masuda Atsushi, Miyajima Shinsuke, Morita Kengo, Negami Takayuki, Ogimoto Kazuhiko, Ohdaira Keisuke, Ohshita Yoshio, Okada Yoshitaka, Okamoto Tamotsu, Osaka Itaru, Sai Hitoshi, Sakurai Takeaki, Shen Qing, Shibata Hajima, Sugaya Takeyoshi, Sugiyama Mutsumi, Takamoto Tatsuya, Tanaka Tooru, Terakawa Akira, Ueda Yuzuru, Usami Noritaka, Wakao Shinji, Yagi Shuhei, Yamanaka Sanshiro, Yoshida Yuji, Yoshita Masahiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08R001

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  112. Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Nakagawa Yoshihiko, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 491   page: 120-125   2018.6

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    DOI: 10.1016/j.jcrysgro.2018.04.001

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  113. Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Takabe Ryota, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    AIP ADVANCES   Vol. 8 ( 5 )   2018.5

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    DOI: 10.1063/1.5025021

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  114. BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FS01

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  115. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    N.M. Shaalan, K.O. Hara, C.T. Trinh, Y. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   Vol. 76   page: 37-41   2018.3

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  116. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    Shaalan N. M., Hara K. O., Trinh C. T., Nakagawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 76   page: 37 - 41   2018.3

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    DOI: 10.1016/j.mssp.2017.12.015

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  117. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    D. V. Yurasov, A. V. Novikov, M. V. Shaleev, N. A. Baidakova, E. E. Morozova, E. V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 75 ) page: 143-148   2018.3

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  118. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 75   page: 143 - 148   2018.3

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    DOI: 10.1016/j.mssp.2017.11.032

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  119. BaSi2 formation mechanism in thermally-evaporated films and its application to reducing oxygen impurity concentration

    K.O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   ( 57 ) page: 04FS01   2018.2

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  120. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

    Yoneda Jun, Takeda Kenta, Otsuka Tomohiro, Nakajima Takashi, Delbecq Matthieu R., Allison Giles, Honda Takumu, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo

    NATURE NANOTECHNOLOGY   Vol. 13 ( 2 ) page: 102 - +   2018.2

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    DOI: 10.1038/s41565-017-0014-x

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  121. Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1435-1442   2018

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    DOI: 10.1557/adv.2018.191

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  122. Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p(+)-Si Diodes

    Hara Kosuke O., Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1387-1392   2018

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    DOI: 10.1557/adv.2018.31

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  123. Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films

    Kurokawa Yasuyoshi, Nezasa Ryota, Kato Shinya, Miyazaki Hisashi, Takahashi Isao, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1419-1426   2018

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    DOI: 10.1557/adv.2018.40

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  124. Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Kurokawa Yasuyoshi, Miyazaki Seiichi, Yamamoto Takahisa, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3896-3899   2018

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  125. Photoresponsivity improvement of BaSi2 epitaxial films by capping with hydrogenated amorphous Si layers by radio-frequency H-2 plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1871-1873   2018

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  126. Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials

    Nezasa R., Kurokawa Y., Usami N.

    2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)     page: .   2018

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  127. Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells

    Cui Min, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2118-2120   2018

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  128. Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases

    Akaishi Ryushiro, Kitazawa Kouhei, Ono Satoshi, Gotoh Kazuhiro, Ichihara Eiji, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2852-2856   2018

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  129. Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Mochizuki Takeya, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1986-1990   2018

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  130. Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3097-3101   2018

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  131. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 72   page: 93-98   2017.12

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    DOI: 10.1016/j.mssp.2017.09.020

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  132. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

    Baidakova N. A., Verbus V. A., Morozova E. E., Novikov A. V., Skorohodov E. V., Shaleev M. V., Yurasov D. V., Hombe A., Kurokawa Y., Usami N.

    SEMICONDUCTORS   Vol. 51 ( 12 ) page: 1542 - 1546   2017.12

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    DOI: 10.1134/S1063782617120028

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  133. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Y. Arisawa, Y. Hoshi, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami

    Materials Science in Semiconductor Processing   ( 70 ) page: 127-132   2017.11

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  134. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Arisawa You, Hoshi Yusuke, Sawano Kentarou, Yamanaka Junji, Arimoto Keisuke, Yamamoto Chiaya, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 127 - 132   2017.11

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    DOI: 10.1016/j.mssp.2016.11.024

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  135. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    Arimoto Keisuke, Nakazawa Hiroki, Mitsui Shohei, Utsuyama Naoto, Yamanaka Junji, Hara Kosuke O., Usami Noritaka, Nakagawa Kiyokazu

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 11 )   2017.11

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    DOI: 10.1088/1361-6641/aa8a87

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  136. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 72 ) page: 93-98   2017.10

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  137. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    Deng Tianguo, Gotoh Kazuhiro, Takabe Ryota, Xu Zhihao, Yachi Suguru, Yamashita Yudai, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JOURNAL OF CRYSTAL GROWTH   Vol. 475   page: 186-191   2017.10

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    DOI: 10.1016/j.jcrysgro.2017.06.017

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  138. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    Hara Kosuke O., Suzuki Shintaro, Usami Noritaka

    THIN SOLID FILMS   Vol. 639   page: 7 - 11   2017.10

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    DOI: 10.1016/j.tsf.2017.08.025

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  139. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K. O. Hara, N. Usami, and K. Nakagawa

    Semiconductor Science and Technology   ( 32 ) page: 114002   2017.9

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  140. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    THIN SOLID FILMS   Vol. 636   page: 546-551   2017.8

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    DOI: 10.1016/j.tsf.2017.06.055

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  141. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    K. O. Hara, S. Suzuki, N. Usami

    Thin Solid Films   ( 639 ) page: 7-11   2017.8

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  142. Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures

    Kurokawa Yasuyoshi, Aonuma Osamu, Tayagaki Takeshi, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 8 )   2017.8

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    DOI: 10.7567/JJAP.56.08MA02

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  143. Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed

    Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 08MA02   2017.7

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  144. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

    M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64   page: 7   2017.7

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  145. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells

    Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64 ( 7 ) page: 2886-2892   2017.7

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    DOI: 10.1109/TED.2017.2704294

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  146. On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads

    Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075502

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  147. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal

    Iwata Taisho, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075501

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  148. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 166   page: 39 - 44   2017.7

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    DOI: 10.1016/j.solmat.2017.03.013

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  149. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Thin Solid Films   ( 646 ) page: 546-551   2017.6

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  150. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    Journal of Crystal Growth   ( 475 ) page: 186-191   2017.6

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  151. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Y. Arisawa, K. Sawano, and N. Usami

    Journal of Crystal Growth   Vol. 468   page: 601-604   2017.6

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  152. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 610 - 613   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.092

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  153. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 620-624   2017.6

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  154. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017.6

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  155. Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique

    Y. Hayama, I. Takahashi, and N. Usami

    Energy Procedia   Vol. 127   page: 610-613   2017.6

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  156. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    Arimoto Keisuke, Yagi Sosuke, Yamanaka Junji, Hara Kosuke O., Sawano Kentarou, Usami Noritaka, Nakagawa Kiyokazu

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 625 - 629   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.076

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  157. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    Babu G. Anandha, Takahashi Isao, Muramatsu Tetsurou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 620 - 624   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.066

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  158. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Arisawa You, Sawano Kentarou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 601 - 604   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.065

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  159. On the growth mechanism of multicrystalline silicon ingots with small grains by using single layer silicon beads

    T. Muramatsu, I. Takahashi, G. Anandha babu, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075502   2017.6

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  160. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation

    T. Iwata, I. Takahashi, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075501   2017.6

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  161. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

    Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB06

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  162. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells

    Bayu M. Emha, Cham Thi Trinh, Takabe Ryota, Yachi Suguru, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB01

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  163. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB04

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  164. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates

    Suhara Takamichi, Murata Koichi, Navabi Aryan, Hara Kosuke O., Nakagawa Yoshihiko, Cham Thi Trinh, Kurokawa Yasuyoshi, Suemasu Takashi, Wang Kang L., Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB05

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  165. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties Reviewed

    C. T. Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB06   2017.4

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  166. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates Reviewed

    T. Suhara, K. Murata, A. Navabi, K. O. Hara, Y. Nakagawa, C. T. Trinh, Y. Kurokawa, T. Suemasu, K. L. Wang, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB05   2017.4

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  167. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells Reviewed

    K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB04   2017.4

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  168. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS07

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  169. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells

    Tayagaki Takeshi, Furuta Daichi, Aonuma Osamu, Takahashi Isao, Hoshi Yusuke, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS01

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  170. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    V. H. Nguyen, P. Sichanugrist, S. Kato, and N. Usami

    Solar Energy Materials and Solar Cells   Vol. 166   page: 39-44   2017.3

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  171. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films Reviewed

    K. O. Hara, C. T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS07   2017.3

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  172. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells Reviewed

    M. E. Bayu, C. T. Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB01   2017.2

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  173. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells Reviewed

    T.Tayagaki, D.Furuta, O.Aonuma, I.Takahashi, Y.Hoshi, Y.Kurokawa, and N.Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS01   2017.1

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  174. Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Suemasu Takashi, Usami Noritaka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 2 ) page: 1-18   2017.1

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    DOI: 10.1088/1361-6463/50/2/023001

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  175. TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon Reviewed

    J. Yamanaka, N. Usami, S. Amtablian, A. Fave, M. Lemiti, C. Yamamoto, and K. Nakagawa

    Journal of Materials Science and Chemical Engineering   Vol. 5   page: 26-34   2017.1

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  176. Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation

    K. O. Hara, C. T. Trinh, Y. Nakagawa, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11202   2017

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  177. Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization

    J. A. Wibowo, I. Takahashi, K. O. Hara, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11201   2017

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  178. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Y.Hayama, I.Takahashi, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017

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  179. Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells

    N.A. Baidakova, V.A. Verbus, E.E. Morozova, A.V. Novikov, E.V. Skorohodov, M.V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami

    Semiconductors   Vol. 51 ( 12 ) page: 1542-1546   2017

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  180. Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts

    K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

    Energy Procedia   Vol. 124   page: 598-603   2017

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  181. Controlling impurity distribution in quasi-mono crystalline Si ingot by seed manipulation for artificially controlled defects technique

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 734-739   2017

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    DOI: 10.1016/j.egypro.2017.09.088

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  182. Development of spin-coated copper iodide on silicon for use in hole-selective contacts

    Gotoh Kazuhiro, Cui Min, Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 598-603   2017

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    DOI: 10.1016/j.egypro.2017.09.081

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  183. Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells

    Gotoh Kazuhiro, Cui Min, Thanh Nguyen Cong, Koyama Koichi, Takahashi Isao, Kurokawa Yasuyoshi, Matsumura Hideki, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1765-1768   2017

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  184. Solar Cells Application of p-type poly-Si Thin Film by Aluminum Induced Crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1794-1796   2017

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  185. Numerical simulation and performance optimization of perovskite solar cell

    Nanduri Sai Naga Raghuram, Siddiki Mahbube K., Chaudhry Ghulam M., Alharthi Yahya Z.

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1018 - 1021   2017

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  186. Exploring the Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications Reviewed

    T. Suemasu and N. Usami

    Journal of Physics D: Applied Physics   Vol. 50   page: 023001   2016.11

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  187. Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization

    S.Tutashkonko, N.Usami

    Thin Solid Films   Vol. 616   page: 213-219   2016.10

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  188. Growth direction control of dendrite crystals in parallel direction to realize high-quality multicrystalline silicon ingot

    T.Hiramatsu, I.Takahashi, S.Matsushima, and N.Usami

    Jpn. J. Appl. Phys.   Vol. 55   page: 091302   2016.8

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  189. Light-induced recovery of effective carier lifetime in boron-doped Czochralski silicon at room temperature Reviewed

    H.Ichikawaa, I.Takahashi, N.Usami, K.Shirasawa, H.Takato

    Energy Procedia   Vol. 92   page: 801-807   2016.8

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  190. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation .

    C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami

    Materials Research Express   Vol. 3 ( 7 ) page: 076204   2016.7

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  191. Evidence for efficient passivation of vertical silicon nanowires by anodic aluminum oxide

    V.H.Nguyen, S.Kato, and N.Usami

    Solar Energy Materials and Solar Cells   Vol. 157   page: 393-398   2016.7

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  192. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities Reviewed

    S.Joonwichien, I.Takahashi, K.Kutsukake, and N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS     2016.5

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    DOI: DOI: 10.1002/pip.2795

  193. p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%

    D.Tsukahara, S.Yachi, H.Takeuchi, R.Takabe, W.Du, M.Baba, Y.Li, K.Toko, N.Usami, and T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 108   page: 152101   2016.4

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  194. Modulated surface nanostructures for enhanced light trapping and reduced surface reflection of crystalline silicon solar cells Reviewed

    T.Tayagaki, Y.Hoshi, Y.Hirai, Y.Matsuo, and N.Usami

    Japanese Journal of Applied Physics   ( 55 ) page: 52302   2016.4

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  195. Simple vacuum evaporation route to BaSi2 thin films for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, and N. Usami

    Energy Procedia   Vol. 141   page: 27-31   2016.3

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  196. On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation Reviewed

    Y.Nakagawaa, K.O.Hara, T.Suemasu, and N.Usami

    Energy Procedia   Vol. 141   page: 23-26   2016.3

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  197. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    G.Anandha babu, I.Takahashi, S.Matsushima, and N.Usami

    Journal of Crystal Growth   Vol. 441   page: 124-130   2016.2

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  198. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    M.M.Rahman, A.Higo, H.Sekhar, M.E.Syazwan, Y.Hoshi, N.Usami, and S.Samukawa

    Japanese Journal of Applied Physics   ( 55 ) page: 032303   2016.2

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  199. Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed

    K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko, T. Suemasu, and N.Usami

    Thin Solid Films   Vol. 603   page: 218-223   2016.2

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  200. Compressively strained Si/Si1_xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed

    Y.Hoshi, Y.Arisawa, K. Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, and N.Usami

    Japanese Journal of Applied Physics   Vol. 55   page: 031302   2016.2

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  201. Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

    M.M.Rahman, M-Y, Lee, Y-C,Tsai, A. Higo, H.Sekhar, M.Igarashi, M.E.Syazwan, Y.Hoshi, K.Sawano, N.Usami, Y.Li, and S.Samukawa

    PROGRESS IN PHOTOVOLTAICS   ( 28 ) page: 774-780   2015.12

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    DOI: 10.1002/pip.2726

  202. Structural and electrical characterizations of crack-free BaSi2 thin filmsfabricated by thermal evaporation

    K.O.Hara, J.Yamanaka, K. Arimoto, K.Nakagawa, T.Suemasu, N.Usami

    Thin Solid Films   Vol. 595   page: 68-72   2015.10

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  203. Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed

    I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami

    Applied Physics Express   Vol. 8   page: 105501   2015.9

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  204. Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed

    V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai

    Japanese Journal of Applied Physics   Vol. 54   page: 095003   2015.8

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  205. Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KD11   2015.7

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  206. Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed

    I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA06   2015.7

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  207. Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed

    Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KC03   2015.7

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  208. Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed

    V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA02   2015.6

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  209. Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed

    O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA01   2015.6

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  210. Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed

    K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka

    Applied Physics Letters   Vol. 106   page: 222102   2015.6

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  211. Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

    I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami

    Journal of Applied Physics   ( 117 ) page: 095701   2015.3

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  212. Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 07JE02   2015.3

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  213. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54 ( 3 ) page: 030306   2015.3

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  214. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54   page: 030306   2015.2

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  215. Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   ( 54 ) page: 04DR03   2015.1

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  216. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed

    K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu

    INTERNATIONAL JOURNAL OF PHOTOENERGY   ( 2015 ) page: 790242   2015.1

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  217. バルク結晶成長のこの10年 Reviewed

    宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志

      Vol. 42 ( 1 ) page: pp.64-68   2015

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  218. Light trapping by direction-dependent light transmission in front-surface photonic nanostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Applied Physics Express   Vol. 7   page: 122301   2014.11

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  219. Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami

    Japanese Journal of Applied Physics   ( 53 ) page: 110312   2014.10

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  220. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu   Vol. 116   page: 123709   2014.9

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  221. Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS   ( 22 ) page: 726-732   2014.7

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  222. Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

    M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   ( 53 ) page: 078004   2014.6

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  223. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  224. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  225. Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed

    R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu

      ( 115 ) page: 193510   2014.5

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  226. Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 368-371   2014.4

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    DOI: 10.1016/j.tsf.2013.08.042

  227. Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties

    Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 338-341   2014.4

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    DOI: 10.1016/j.tsf.2013.10.066

  228. Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange

    R.Numata, K.Toko, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 147-150   2014.4

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    DOI: 10.1016/j.tsf.2013.08.044

  229. Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

    R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 143-146   2014.4

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    DOI: 10.1016/j.tsf.2013.08.040

  230. N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu

    Thin Solid Films   Vol. 557   page: 90-93   2014.4

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    DOI: 10.1016/j.tsf.2013.08.038

  231. Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

    K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115 ( 9 ) page: 094301   2014.3

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    DOI: 10.1063/1.4867218

  232. Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

    K.Nakajima, K.Morishita, R.Murai, N.Usami

    Journal of Crystal Growth   Vol. 389   page: 112-119   2014.3

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    DOI: 10.1016/j.jcrysgro.2013.12.006

  233. Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CrystEngComm   Vol. 16 ( 13 ) page: 2578-2583   2014.2

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    DOI: 10.1039/c3ce42057d

  234. Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange

    R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH03   2014.2

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  235. Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates

    K.Nakazawa, K.Toko, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH01   2014.2

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  236. Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed

    R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04ER04   2014.2

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  237. Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots

    T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami

    Optics Express   Vol. 22 ( 52 ) page: A225-A232   2014.1

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    DOI: 10.1364/oe.22.00a225

  238. Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu

    Applied Physics Letters   Vol. 104 ( 2 ) page: 022106   2014.1

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    DOI: 10.1063/1.4861890

  239. Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays

    T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa

    Journal of Synchrotron Radiation   Vol. 21   page: 161-164   2014.1

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    DOI: 10.1107/s1600577513026088

  240. Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

    K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga

    Ieee Journal of Photovoltaics   Vol. 4 ( 1 ) page: 84-87   2014.1

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    DOI: 10.1109/jphotov.2013.2281730

  241. Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates

    K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1781-1784   2013.12

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  242. Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates

    M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1756-1768   2013.12

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  243. Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications

    W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1765-1768   2013.12

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  244. Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure

    R.Numata, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1769-1772   2013.12

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  245. Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

    R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1753-1755   2013.12

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  246. Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1677-1680   2013.11

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  247. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6   page: 112302   2013.11

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  248. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6 ( 11 ) page: 112302   2013.10

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    DOI: 10.7567/apex.6.112302

  249. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O.Hara, N.Usami

    Journal of Applied Physics   Vol. 114   page: 153101   2013.10

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  250. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013.9

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  251. Investigation of the open-circuit voltage in solar cells doped with quantum dots

    T.Tayagaki, Y.Hoshi, N.Usami

    Scientific Reports   Vol. 3   page: 2703   2013.9

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    DOI: 10.1038/srep02703

  252. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga

    Applied Physics Express   Vol. 6   page: 025505   2013.9

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  253. Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

    Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    Journal of Crystal Growth   Vol. 378   page: 365-367   2013.9

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  254. Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

    XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 636-639   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.11.002

  255. On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

    K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 251-253   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.100

  256. Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

    M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 201-204   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.153

  257. Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy

    S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 198-200   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.052

  258. Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates

    K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 212-217   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.152

  259. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 193-197   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.176

  260. Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization

    K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu

    Ecs Journal of Solid State Science and Technology   Vol. 2 ( 11 ) page: Q195-Q199   2013.8

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    DOI: 10.1149/2.007311jss

  261. Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties

    Y.Hoshi, WG.Pan, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 ) page: UNSP 080202   2013.8

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    DOI: 10.7567/JJAP.52.080202

  262. Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Crystal Growth & Design   Vol. 13 ( 9 ) page: 3908-3912   2013.7

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    DOI: 10.1021/cg4005533

  263. Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

    K.Toko, N.Fukata, K.Nakazawa, M.Kurosawa, N.Usami, M.Miyao, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 189-192   2013.6

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    DOI: 10.1016/j.jcrysgro.2013.03.031

  264. Effect of Ga content and growth temperature on Cu(In,Ga)Se2 thin film deposited on heat-resistant glass substrates

    T.Higuchi, N.Usami, T.Minemoto

    Phys.Status Solidi C   Vol. 10   page: 1035-1037   2013.5

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  265. Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

    M.Igarashi, WG.Hu, M.M.Rahman, N.Usami, S.Samukawa

    NANOSCALE RESEARCH LETTERS   Vol. 8   page: 228   2013.5

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    DOI: 10.1186/1556-276X-8-228

  266. Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu,

    THIN SOLID FILMS   Vol. 534   page: 470-473   2013.5

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    DOI: 10.1016/j.tsf.2013.02.014

  267. Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si

    S.Joonwichien, S.Matsushima, N.Usami

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 13 ) page: 133503   2013.4

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    DOI: 10.1063/1.4798600

  268. Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization

    R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CRYSTAL GROWTH & DESIGN   Vol. 13 ( 4 ) page: 1767-1770   2013.4

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    DOI: 10.1021/cg4000878

  269. In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications

    M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 102 ( 11 ) page: 112107   2013.3

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    DOI: 10.1063/1.4796142

  270. Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

    K. Nakamura, M. Baba, M. A. Khan, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 113 ( 5 )   2013.2

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    DOI: 10.1063/1.4790597

  271. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto and I. Yonenaga

    Applied Physics Express   Vol. 6 ( 2 )   2013.2

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    DOI: 10.7567/APEX.6.025505

  272. On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process

    N. Usami, M. N. Jung and T. Suemasu

    Journal of Crystal Growth   Vol. 362   page: 16-19   2013.1

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  273. Effects of formation of mini-bands in two-dimensional array of silicon nanodisks with SiC interlayer for quantum dot solar cells

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, Y. Tamura, M. E. Syazwan, N. Usami and S. Samukawa

    Nanotechnology   Vol. 24 ( 1 )   2013.1

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    DOI: 10.1088/0957-4484/24/1/015301

  274. Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)

    R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramirez-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter and K. Hingerl

    Applied Physics Letters   Vol. 102 ( 1 )   2013.1

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    DOI: 10.1063/1.4773560

  275. Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

    K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano and Y. Shiraki

    Journal of Crystal Growth   Vol. 362   page: 276-281   2013.1

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  276. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi and T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013

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    DOI: 10.1063/1.4824335

  277. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O. Hara, N.Usami

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153101   2013

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    DOI: 10.1063/1.4825046

  278. Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

    X. J. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Ieee Journal of Selected Topics in Quantum Electronics   Vol. 18 ( 6 ) page: 1830-1838   2012.12

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  279. Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells

    T. Tayagaki, N. Usami and Y. Kanemitsu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NE24

  280. Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness

    A. Okada, K. Toko, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 356   page: 65-69   2012.10

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  281. Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization

    K. Ohdaira, K. Sawada, N. Usami, S. Varlamov and H. Matsumura

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB15

  282. Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

    K. O. Hara, N. Usami, K. Toh, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB06

  283. Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 112 ( 8 )   2012.10

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    DOI: 10.1063/1.4759246

  284. Growth velocity and grain size of multicrystalline solar cell silicon

    I. Brynjulfsen, K. Fujiwara, N. Usami and L. Amberg

    Journal of Crystal Growth   Vol. 356   page: 17-21   2012.10

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  285. Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.095501

  286. Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation

    T. Tayagaki, N. Usami, W. G. Pan, Y. Hoshi, K. Ooi and Y. Kanemitsu

    Applied Physics Letters   Vol. 101 ( 13 )   2012.9

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    DOI: 10.1063/1.4756895

  287. Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 mu m on Si(111)

    M. Baba, K. Nakamura, W. J. Du, M. A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.098003

  288. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao and T. Suemasu

    Applied Physics Letters   Vol. 101 ( 7 )   2012.8

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    DOI: 10.1063/1.4744962

  289. Quantum dot solar cells using 2-dimensional array of 6.4-nm-diameter silicon nanodisks fabricated using bio-templates and neutral beam etching

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, N. Usami and S. Samukawa

    Applied Physics Letters   Vol. 101 ( 6 )   2012.8

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    DOI: 10.1063/1.4745195

  290. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities

    X. J. Xu, T. Tsuboi, T. Chiba, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 20 ( 13 ) page: 14714-14721   2012.6

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  291. Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique

    M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 348 ( 1 ) page: 75-79   2012.6

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  292. Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals

    N. Usami, W. G. Pan, T. Tayagaki, S. T. Chu, J. S. Li, T. H. Feng, Y. Hoshi and T. Kiguchi

    Nanotechnology   Vol. 23 ( 18 )   2012.5

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    DOI: 10.1088/0957-4484/23/18/185401

  293. Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities

    T. Tsuboi, X. J. Xu, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Applied Physics Express   Vol. 5 ( 5 )   2012.5

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    DOI: 10.1143/APEX.5.052101

  294. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

    T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki and K. M. Itoh

    Applied Physics Letters   Vol. 100 ( 22 )   2012.5

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    DOI: 10.1063/1.4723690

  295. Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Journal of Crystal Growth   Vol. 345 ( 1 ) page: 16-21   2012.4

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  296. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

    K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami

    Journal of Crystal Growth   Vol. 344 ( 1 )   2012.4

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    DOI: 10.1016/j.jcrysgro.2012.01.051

  297. Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

    T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DH02

  298. Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers

    W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DP01

  299. Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells

    W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu

    Applied Physics Letters   Vol. 100 ( 15 )   2012.4

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    DOI: 10.1063/1.3703585

  300. Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films

    K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.121202

  301. The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Journal of Ceramic Processing Research   Vol. 12   page: S187-S192   2011.11

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  302. Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima

    Journal of Applied Physics   Vol. 110 ( 8 )   2011.10

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    DOI: 10.1063/1.3652891

  303. Formation mechanism of twin boundaries during crystal growth of silicon

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima

    Scripta Materialia   Vol. 65 ( 6 ) page: 556-559   2011.9

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  304. Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation

    Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.095701

  305. Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

    T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno

    Science and Technology of Advanced Materials   Vol. 12 ( 3 )   2011.6

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    DOI: 10.1088/1468-6996/12/3/034413

  306. Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells

    N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 8 )   2011.4

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    DOI: 10.1063/1.3576108

  307. Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki

    Microelectronic Engineering   Vol. 88   page: 465-468   2011.4

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  308. In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami

    Japanese Journal of Applied Physics   Vol. 50 ( 4 )   2011.4

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    DOI: 10.1143/JJAP.50.04DP02

  309. Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

    I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 3 )   2011.2

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    DOI: 10.1063/1.3544208

  310. Pattern formation mechanism of a periodically faceted interface during crystallization of Si

    M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 24 ) page: 3670-3674   2010.12

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  311. A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures

    H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata

    Journal of Physics-Condensed Matter   Vol. 22 ( 47 )   2010.12

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    DOI: 10.1088/0953-8984/22/47/474003

  312. Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

    H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu

    Journal of Crystal Growth   Vol. 312 ( 22 ) page: 3257-3260   2010.11

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  313. Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

    L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken

    Applied Physics Letters   Vol. 97 ( 21 )   2010.11

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    DOI: 10.1063/1.3518703

  314. Room-temperature electroluminescence from Si microdisks with Ge quantum dots

    J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 18 ( 13 ) page: 13945-13950   2010.6

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  315. Growth mechanism of the Si < 110 > faceted dendrite

    K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda

    Physical Review B   Vol. 81 ( 22 )   2010.6

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    DOI: 10.1103/PhysRevB.81.224106

  316. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

    I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 7 ) page: 897-901   2010.3

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  317. Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

    Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Journal of Applied Physics   Vol. 107 ( 10 )   2010.3

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    DOI: 10.1063/1.3374688

  318. Optical anisotropies of Si grown on step-graded SiGe(110) layers

    R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Applied Physics Letters   Vol. 96 ( 9 )   2010.3

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    DOI: 10.1063/1.3339881

  319. Formation of uniaxially strained SiGe by selective ion implantation technique

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518 ( 9 ) page: 2454-2457   2010.2

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  320. Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

    N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 107 ( 1 )   2010.1

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    DOI: 10.1063/1.3276219

  321. Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation

    Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518   page: S162-S164   2010.1

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  322. Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon

    I. Takahashi, N. Usami, K. Kutsukake, K. Morishita and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.04DP01

  323. Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

    S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.040202

  324. Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells

    Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase

    Japanese Journal of Applied Physics   Vol. 49   2010

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    DOI: 10.1143/JJAP.49.04DP05

  325. Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications

    T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 2 )   2010

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    DOI: 10.1143/APEX.3.021301

  326. On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 9 )   2010

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    DOI: 10.1143/APEX.3.095803

  327. Growth behavior of faceted Si crystals at grain boundary formation

    K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 1 ) page: 19-23   2009.12

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  328. Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth

    M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima

    Physical Review B   Vol. 80 ( 17 )   2009.11

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    DOI: 10.1103/PhysRevB.80.174108

  329. Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content

    R. Nihei, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 48 ( 11 )   2009.11

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    DOI: 10.1143/JJAP.48.115507

  330. Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Solid-State Electronics   Vol. 53 ( 10 ) page: 1135-1143   2009.10

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  331. Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Letters   Vol. 95   2009.9

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    DOI: 10.1063/1.3229998

  332. Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 311 ( 14 ) page: 3581-3586   2009.7

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  333. Microstructures of Si multicrystals and their impact on minority carrier diffusion length

    H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima

    Acta Materialia   Vol. 57 ( 11 ) page: 3268-3276   2009.6

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  334. Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Applied Physics Express   Vol. 2 ( 5 )   2009.5

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    DOI: 10.1143/APEX.2.051601

  335. Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots

    J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics   Vol. 48 ( 2 )   2009.2

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    DOI: 10.1143/JJAP.48.022102

  336. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance

    K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 105 ( 4 )   2009.2

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    DOI: 10.1063/1.3079504

  337. Floating cast method to realize high-quality Si bulk multicrystals for solar cells

    Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 311 ( 2 ) page: 228-231   2009.1

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  338. Resonant photoluminescence from Ge self-assembled dots in optical microcavities

    J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311   page: 883-887   2009

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  339. Local control of strain in SiGe by ion-implantation technique

    K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 806-808   2009

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  340. Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 825-828   2009

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  341. Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 819-824   2009

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  342. Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 311   page: 809-813   2009

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  343. Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates

    K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 814-818   2009

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  344. Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt

    Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Crystal Growth   Vol. 310 ( 24 ) page: 5248-5251   2008.12

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  345. Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities

    I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 12 ) page: 8790-8792   2008.12

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  346. Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 12 )   2008.12

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    DOI: 10.1143/APEX.1.121401

  347. Room-temperature light-emission from Ge quantum dots in photonic crystals

    J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 125-127   2008.11

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  348. Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

    N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 14-16   2008.11

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  349. Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

    M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 254-256   2008.11

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  350. Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Thin Solid Films   Vol. 517 ( 1 ) page: 235-238   2008.11

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  351. Vacancy formation during oxidation of silicon crystal surface

    M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga

    Applied Physics Letters   Vol. 93 ( 10 )   2008.9

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    DOI: 10.1063/1.2979708

  352. Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 8 )   2008.8

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    DOI: 10.1143/APEX.1.081401

  353. Growth mechanism of Si-faceted dendrites

    K. Fujiwara, K. Maeda, N. Usami and K. Nakajima

    Physical Review Letters   Vol. 101 ( 5 )   2008.8

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    DOI: 10.1103/PhysRevLett.101.055503

  354. Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals

    N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima

    Applied Physics Express   Vol. 1 ( 7 )   2008.7

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    DOI: 10.1143/APEX.1.075001

  355. Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy

    M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 6 ) page: 4630-4633   2008.6

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  356. In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 56 ( 11 ) page: 2663-2668   2008.6

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  357. On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures

    K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 1 )   2008.1

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    DOI: 10.1143/APEX.1.011401

  358. Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Vol. 40 ( 6 ) page: 2122-2124   2008

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  359. Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

    K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura

    THIN SOLID FILMS   Vol. 516 ( 5 ) page: 600-603   2008

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  360. Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method

    R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami

    Jpn. J. Appl. Phys.   Vol. 47   page: 2927-2931   2008

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  361. Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis

    N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 102 ( 10 )   2007.11

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    DOI: 10.1063/1.2816207

  362. High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

    K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 46 ( 11 ) page: 7198-7203   2007.11

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  363. Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

    J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami

    Applied Physics Letters   Vol. 91 ( 1 )   2007.7

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    DOI: 10.1063/1.2754356

  364. SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

    S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima

    Applied Physics Letters   Vol. 91   2007.7

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    DOI: 10.1063/1.2756363

  365. Formation mechanism of parallel twins related to Si-facetted dendrite growth

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima

    Scripta Materialia   Vol. 57 ( 2 ) page: 81-84   2007.7

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  366. Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells

    N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima

    Applied Physics Letters   Vol. 90 ( 18 )   2007.4

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    DOI: 10.1063/1.2735286

  367. Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution

    M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 5 )   2007.3

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    DOI: 10.1063/1.2709575

  368. Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 6 )   2007.3

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    DOI: 10.1063/1.2710348

  369. Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface

    S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima

    Crystal Growth & Design   Vol. 7 ( 2 ) page: 439-444   2007.2

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  370. Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima

    Materials Transactions   Vol. 48 ( 2 ) page: 143-147   2007.2

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  371. Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells

    N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima

    Solar Energy Materials and Solar Cells   Vol. 91   page: 123-128   2007.1

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  372. Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

    N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti

    Applied Physics Letters   Vol. 90 ( 3 )   2007.1

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    DOI: 10.1063/1.2433025

  373. Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 301   page: 339-342   2007

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  374. Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 301   page: 343-348   2007

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  375. Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

    M. Suezawa, K. Koilma, A. Kasuya, I. Yonenaga and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 12 ) page: 9162-9166   2006.12

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  376. Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

    J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami and Y. Nakata

    Applied Physics Letters   Vol. 89 ( 20 )   2006.11

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    DOI: 10.1063/1.2386915

  377. Magnetotransport properties of Ge channels with extremely high compressive strain

    K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 89 ( 16 )   2006.10

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    DOI: 10.1063/1.2354467

  378. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 54 ( 12 ) page: 3191-3197   2006.7

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  379. High sensitive imaging of atomic arrangement of Ge clusters buried in a Si crystal by X-ray fluorescence holography

    S. Kusano, S. Nakatani, K. Sumitani, T. Takahashi, Y. Yoda, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 6A ) page: 5248-5253   2006.6

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  380. Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

    N. Usami, Y. Nose, K. Fujiwara and K. Nakajima

    Applied Physics Letters   Vol. 88   2006.5

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    DOI: 10.1063/1.2735286

  381. Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration

    N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1734-1737   2006.3

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  382. High-efficiency concave and conventional solar cell integration system using focused reflected light

    K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1664-1667   2006.3

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  383. Intermixing of Ge and Si during exposure of GeH4 on Si

    G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima

    THIN SOLID FILMS   Vol. 508   page: 163-165   2006

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  384. Strain field and related roughness formation in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    THIN SOLID FILMS   Vol. 508 ( 1-2 ) page: 117-119   2006

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  385. Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells

    A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima

    Thin Solid Films   Vol. 508   page: 402-405   2006

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  386. Determination of lattice parameters of SiGe/Si(110) heterostructures

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami

    Thin Solid Films   Vol. 508   page: 132-135   2006

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  387. Directional growth method to obtain high quality polycrystalline silicon from its melt

    K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    J. Cryst. Growth   Vol. 292   page: 282-285   2006

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  388. Thickness dependence of strain field distribution in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44   page: 8445-8447   2005.12

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  389. Analysis of the dark-current density in solar cells based on multicrystalline SiGe

    K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 11 ) page: 8019-8022   2005.11

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  390. Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

    N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 284   page: 57-64   2005.10

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  391. Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

    Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara

    Journal of Applied Physics   Vol. 98 ( 7 )   2005.10

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    DOI: 10.1063/1.2061891

  392. Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8 ( 6 ) page: 652-652   2005.10

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  393. Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions

    K. Nakajima, K. Fujiwara, Y. Nose and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 7A ) page: 5092-5095   2005.7

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  394. Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

    M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 280   page: 419-424   2005.7

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  395. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    Thin Solid Films   Vol. 476 ( 1 ) page: 206-209   2005.4

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  396. A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

    Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima

    Journal of Crystal Growth   Vol. 276   page: 393-400   2005.4

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  397. Structural properties of directionally grown polycrystalline SiGe for solar cells

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 275   page: 467-473   2005.3

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  398. On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution

    N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 2 ) page: 857-860   2005.2

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  399. Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

    B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami

    Applied Physics Letters   Vol. 86 ( 3 )   2005.1

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    DOI: 10.1063/1.1850594

  400. Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 273   page: 594-602   2005.1

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  401. Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration

    N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 24-27 ) page: L778-L780   2005

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  402. Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures

    K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 8 ( 1-3 ) page: 177-180   2005

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  403. Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method

    K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 42-45 ) page: L1316-L1319   2005

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  404. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

    K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki

    International Journal of Materials & Product Technology   Vol. 22   page: 185-212   2005

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  405. Changes in elastic deformation of strained Si by microfabrication

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8   page: 181-185   2005

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  406. Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 79 ( 7 ) page: 1711-1714   2004.11

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  407. Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

    K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami

    Applied Physics Letters   Vol. 85 ( 13 ) page: 2514-2516   2004.9

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  408. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

    K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima

    Applied Physics Letters   Vol. 85 ( 8 ) page: 1335-1337   2004.8

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  409. Low-temperature growth of ZnO nanostructure networks

    B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami

    Journal of Applied Physics   Vol. 96 ( 1 ) page: 340-343   2004.7

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  410. Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Journal of Physical Chemistry B   Vol. 108   page: 10899-10902   2004.7

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  411. Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution

    W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa

    Journal of Applied Physics   Vol. 96 ( 2 ) page: 1238-1241   2004.7

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  412. Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation

    Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 43 ( 7A ) page: L907-L909   2004.7

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  413. Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition

    N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 43 ( 7A ) page: 4110-4113   2004.7

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  414. Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

    T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 467-474   2004.6

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  415. Grain growth behaviors of polycrystalline silicon during melt growth processes

    K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 441-448   2004.6

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  416. Formation of highly aligned ZnO tubes on sapphire (0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Applied Physics Letters   Vol. 84 ( 20 ) page: 4098-4100   2004.3

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  417. Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

    B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami and Y. Segawa

    Thin Solid Films   Vol. 449   page: 12-19   2004.2

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  418. Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe

    N. Usami, W. G. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 43 ( 2B ) page: L250-L252   2004.2

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  419. In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy

    G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 536-542   2004.2

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  420. Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, J. T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, Y. Takahashi, E. Matsubara, T. Sakurai and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 196-201   2004.2

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  421. In-situ observations of melt growth behavior of polycrystalline silicon

    K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 124-129   2004.2

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  422. Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 78 ( 1 ) page: 25-28   2004.1

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  423. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations

    K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 260   page: 372-383   2004.1

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  424. Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime

    N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki and K. Nakajima

    THIN SOLID FILMS   Vol. 451   page: 604-607   2004

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  425. Molten metal flux growth and properties of CrSi2

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 383   page: 319-321   2004

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  426. Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    MATERIALS SCIENCE FORUM   Vol. 457-460   page: 633-636   2004

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  427. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang and Y. Segawa

    Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page: 95-98   2004

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  428. Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y. Shiraki

    Applied Physics Letters   Vol. 84 ( 15 ) page: 2802-2804   2004

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  429. High-temperature solution growth and characterization of chromium disilicide

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. H. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, Y. Murakami, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y. Yokoyama, S. Kohiki, Y. Kawazoe and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 42 ( 12 ) page: 7292-7293   2003.12

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  430. In-plane strain fluctuation in strained-Si/SiGe heterostructures

    K. Sawano, S. Koh, Y. Shiraki, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 83 ( 21 ) page: 4339-4341   2003.11

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  431. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

    B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami

    Applied Physics Letters   Vol. 83 ( 8 ) page: 1635-1637   2003.8

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  432. Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki

    Applied Physics Letters   Vol. 83 ( 6 ) page: 1258-1260   2003.8

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  433. Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix

    N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki and K. Nakajima

    Journal of Applied Physics   Vol. 94 ( 2 ) page: 916-920   2003.7

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  434. Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals

    Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 254   page: 188-195   2003.6

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  435. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature

    Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 250   page: 298-304   2003.4

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  436. In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition

    B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3B ) page: L264-L266   2003.3

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  437. High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature

    T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L217-L219   2003.3

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  438. Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L232-L234   2003.3

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  439. Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition

    B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 42   page: 2291-2295   2003

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  440. Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures

    K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page: 693-696   2003

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  441. 3D atomic imaging of SiGe system by X-ray fluorescence holography

    K. Hayashi, Y. Takahashi, E. Matsubara, K. Nakajima and N. Usami

    J. Materials Science: Materials in Electronics   Vol. 14   page: 459-462   2003

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  442. Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Applied Physics   Vol. 92 ( 12 ) page: 7098-7101   2002.12

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  443. In situ observations of crystal growth behavior of silicon melt

    K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi

    Journal of Crystal Growth   Vol. 243 ( 2 ) page: 275-282   2002.8

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  444. Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 41 ( 7A ) page: 4462-4465   2002.7

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  445. Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 242   page: 313-320   2002.7

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  446. Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)

    N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara

    Materials Transactions   Vol. 43 ( 7 ) page: 1533-1536   2002.7

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  447. Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 73 ( 3 ) page: 305-320   2002.7

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  448. New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 241 ( 3 ) page: 387-394   2002.6

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  449. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

    K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 240   page: 373-381   2002.5

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  450. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 72   page: 93-100   2002.4

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  451. In-situ monitoring system of the position and temperature at the crystal-solution interface

    G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 236   page: 125-131   2002.3

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  452. Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution

    N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 41 ( 1AB ) page: L37-L39   2002.1

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  453. In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

    G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 234   page: 516-522   2002.1

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  454. Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization

    A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki

    Applied Physics Letters   Vol. 80 ( 3 ) page: 488-490   2002.1

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  455. Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands

    M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk

    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA   Vol. 66   page: 161-164   2002

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  456. Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 364-367   2002

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  457. Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    JOURNAL OF NON-CRYSTALLINE SOLIDS   Vol. 312   page: 196-202   2002

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  458. Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

    A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 62-65   2002

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  459. Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama

    Semiconductor Science and Technology   Vol. 16 ( 8 ) page: 699-703   2001.8

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  460. Physical model for the evaluation of solid-liquid interfacial tension in silicon

    T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Applied Physics   Vol. 90 ( 2 ) page: 750-755   2001.7

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  461. Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties

    K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry

    Applied Physics Letters   Vol. 79 ( 3 ) page: 344-346   2001.7

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  462. Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 40 ( 6A ) page: 4141-4144   2001.6

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  463. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system

    Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 224   page: 204-211   2001.4

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  464. The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

    N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami and M. Y. Valakh

    PHYSICS OF LOW-DIMENSIONAL STRUCTURES   Vol. 41337   page: 295-301   2001

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  465. Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands

    N. Usami, M. Miura, Y. Ito, Y. Araki, K. Nakajima and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 227   page: 782-785   2001

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  466. Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures

    K. Ohdaira, N. Usami, K. Ota and Y. Shiraki

    PHYSICA E   Vol. 11 ( 2-3 ) page: 68-71   2001

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  467. Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies

    K. Nakajima, T. Ujihara, G. Sazaki and N. Usami

    Journal of Crystal Growth   Vol. 220 ( 4 ) page: 413-424   2000.12

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  468. SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa and S. Kodama

    Applied Physics Letters   Vol. 77 ( 22 ) page: 3565-3567   2000.11

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  469. In situ measurement of composition in high-temperature solutions by X-ray fluorescence spectrometry

    T. Ujihara, G. Sazaki, S. Miyashita, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 39 ( 10 ) page: 5981-5982   2000.10

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  470. Drastic increase of the density of Ge islands by capping with a thin Si layer

    N. Usami, M. Miura, Y. Ito, Y. Araki and Y. Shiraki

    Applied Physics Letters   Vol. 77 ( 2 ) page: 217-219   2000.7

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  471. Modification of the growth mode of Ge on Si by buried Ge islands

    N. Usami, Y. Araki, Y. Ito, M. Miura and Y. Shiraki

    Applied Physics Letters   Vol. 76 ( 25 ) page: 3723-3725   2000.6

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  472. Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands

    N. Usami and Y. Shiraki

    THIN SOLID FILMS   Vol. 369   page: 108-111   2000

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  473. Microscopic probing of localized excitons in quantum wells

    N. Usami, K. Ota, K. Ohdaira, Y. Shiraki, T. Hasche, V. Lyssenko and K. Leo

    INSTITUTE OF PHYSICS CONFERENCE SERIES   ( 166 ) page: 99-102   2000

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  474. Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

    H. Takamiya, M. Miura, N. Usami, T. Hattori and Y. Shiraki

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 84-87   2000

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  475. Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices

    K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 405-408   2000

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  476. Formation of relaxed SiGe films on Si by selective epitaxial growth

    K. Kawaguchi, N. Usami and Y. Shiraki

    Thin Solid Films   Vol. 369   page: 126-129   2000

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  477. Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer

    K. Arimoto, N. Usami and Y. Shiraki

    Physica E   Vol. 8   page: 323-327   2000

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  478. Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells

    K. Arimoto, T. Sugita, N. Usami and Y. Shiraki

    Physical Review B   Vol. 60 ( 19 ) page: 13735-13739   1999.11

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  479. Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures

    N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura

    Physical Review B   Vol. 60 ( 3 ) page: 1879-1883   1999.7

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  480. Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction

    Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki

    Journal of Materials Synthesis and Processing   Vol. 7 ( 3 ) page: 205-207   1999.5

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  481. Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

    E. S. Kim, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 14 ( 3 ) page: 257-265   1999.3

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  482. Optical characterization of strain-induced structural modification in SiGe-based heterostructures

    N. Usami, K. Leo and Y. Shiraki

    Journal of Applied Physics   Vol. 85 ( 4 ) page: 2363-2366   1999.2

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  483. Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Journal of Electronic Materials   Vol. 28 ( 2 ) page: 98-104   1999.2

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  484. Photoluminescence study of InP/GaP highly strained quantum wells

    T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 162   page: 511-516   1999

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  485. Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy

    S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 37 ( 12B ) page: L1493-L1496   1998.12

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  486. Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates

    K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 13 ( 11 ) page: 1277-1283   1998.11

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  487. Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates

    J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 10 ( 39 ) page: 8643-8652   1998.10

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  488. Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice

    Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki

    Acta Physica Sinica-Overseas Edition   Vol. 7 ( 8 ) page: 608-612   1998.8

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  489. Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si

    L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Ieee Electron Device Letters   Vol. 19 ( 8 ) page: 273-275   1998.8

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  490. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 72   page: 1617-1619   1998.3

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  491. In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure

    N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura

    PHYSICA E   Vol. 2   page: 883-886   1998

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  492. Photoluminescence from pure-Ge/pure-Si neighboring confinement structure

    N. Usami, M. Miura, H. Sunamura and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16   page: 1710-1712   1998

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  493. Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates

    N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe

    Superlattices and Microstructures   Vol. 23 ( 2 ) page: 395-400   1998

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  494. Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

    N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki

    PHYSICA E   Vol. 2   page: 137-141   1998

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  495. Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization

    T. Sugita, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 188 ( 1-4 ) page: 323-327   1998

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  496. New strain-relieving microstructure in pure-Ge/Si short-period superlattices

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16 ( 3 ) page: 1595-1598   1998

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  497. Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures

    K. Uchida, N. Miura, T. Sugita, F. Issiki, N. Usami and Y. Shiraki

    PHYSICA B   Vol. 251   page: 909-913   1998

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  498. Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells

    K. Ota, N. Usami and Y. Shiraki

    PHYSICA E   Vol. 2 ( 1-4 ) page: 573-577   1998

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  499. Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Superlattices and Microstructures   Vol. 23 ( 1 ) page: 97-102   1998

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  500. Spectroscopic study of Si-based quantum wells with neighbouring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Semiconductor Science and Technology   Vol. 12 ( 12 ) page: 1596-1602   1997.12

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  501. Optical investigation of growth mode of Ge thin films on Si(110) substrates

    J. Arai, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 71 ( 6 ) page: 785-787   1997.8

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  502. Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Semiconductor Science and Technology   Vol. 12 ( 7 ) page: 881-887   1997.7

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  503. Interfacial roughness of Si1-xGex/Si multilayer structures on Si(111) probed by x-ray scattering

    P. M. Reimer, J. H. Li, Y. Yamaguchi, O. Sakata, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 9 ( 22 ) page: 4521-4533   1997.6

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  504. Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

    J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga and T. Hattori

    Applied Physics Letters   Vol. 70 ( 22 ) page: 2981-2983   1997.6

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  505. Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Journal of Applied Physics   Vol. 81 ( 8 ) page: 3484-3489   1997.4

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  506. Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 70 ( 3 ) page: 295-297   1997.1

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  507. Oxidation of strained Si in a microwave electron cyclotron resonance plasma

    L. K. Bera, M. Mukhopadhyay, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 2 ) page: 217-219   1997.1

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  508. Electrical properties of oxides grown on strained Si using microwave N2O plasma

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 1 ) page: 66-68   1997.1

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  509. Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    THIN SOLID FILMS   Vol. 294 ( 1-2 ) page: 336-339   1997

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  510. Luminescence study on Ge islands as stressors on Si1-xGex/Si quantum well

    E. S. Kim, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 175   page: 519-523   1997

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  511. Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures

    N. Usami, W. G. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki

    Applied Physics Letters   Vol. 68 ( 23 ) page: 3221-3223   1996.6

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  512. Ultrashort lifetime photocarriers in Ge thin films

    N. Sekine, K. Hirakawa, F. Sogawa, Y. Arakawa, N. Usami, Y. Shiraki and T. Katoda

    Applied Physics Letters   Vol. 68 ( 24 ) page: 3419-3421   1996.6

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  513. Role of heterointerface on enhancement of no-phonon luminescence in Si-based neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 17 ) page: 2340-2342   1996.4

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  514. Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 13 ) page: 1847-1849   1996.3

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  515. Exciton diffusion dynamics in SiGe/Si quantum wells on a V-groove patterned Si substrate

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    SOLID-STATE ELECTRONICS   Vol. 40   page: 733-736   1996

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  516. Formation and optical properties of SiGe/Si quantum structures

    Y. Shiraki, H. Sunamura, N. Usami and S. Fukatsu

    APPLIED SURFACE SCIENCE   Vol. 102   page: 263-271   1996

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  517. Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates

    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 145   page: 925-930   1996

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  518. Rectangular AlGaAs/AlAs quantum wires using spontaneous vertical quantum wells

    W. G. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 35 ( 2B ) page: 1214-1216   1996

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  519. Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

    S. Fukatsu, N. Usami and Y. Shiraki

    J. Vac. Sci. Technol   Vol. 14   page: 2387-2390   1996

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  520. CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY

    V. Higgs, E. C. Lightowlers, N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 67 ( 12 ) page: 1709-1711   1995.9

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  521. DYNAMICS OF EXCITON DIFFUSION IN SIGE QUANTUM-WELLS ON A V-GROOVE PATTERNED SI SUBSTRATE

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    Physical Review B   Vol. 52 ( 7 ) page: 5132-5135   1995.8

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  522. ENHANCEMENT OF RADIATIVE RECOMBINATION IN SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE

    N. Usami, F. Issiki, D. K. Nayak, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 67   page: 524-526   1995.7

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  523. ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 66 ( 22 ) page: 3024-3026   1995.5

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  524. STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX/SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

    N. Usami, H. Sunamura, T. Mine, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 150   page: 1065-1069   1995

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  525. Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF CRYSTAL GROWTH   Vol. 157   page: 27-30   1995

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  526. Photoluminescence investigation on growth mode changeover of Ge on Si(100)

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 265-269   1995

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  527. Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen

    G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki and T. Hattori

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 36-39   1995

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  528. CRUCIAL ROLE OF SI BUFFER LAYER QUALITY IN THE PHOTOLUMINESCENCE EFFICIENCY OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    T. Mine, N. Usami, Y. Shiraki and S. Fukatsu

    J. Cryst. Growth   Vol. 150 ( 1-4 ) page: 1033-1037   1995

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  529. Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices

    J. Y. Kim, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 40-44   1995

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  530. CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ON V-GROOVE PATTERNED SI SUBSTRATES

    V. Higgs, E. C. Lightowlers, N. Usami, Y. Shiraki, T. Mine and S. Fukatsu

    J. Cryst. Growth   Vol. 150   page: 1070-1073   1995

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  531. ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY

    G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 65 ( 23 ) page: 2975-2977   1994.12

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  532. PHOTOLUMINESCENCE OF SI/SIGE/SI QUANTUM-WELLS ON SEPARATION BY OXYGEN IMPLANTATION SUBSTRATE

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 18 ) page: 2373-2375   1994.5

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  533. OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 9 ) page: 1126-1128   1994.2

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  534. FABRICATION OF SIGE/SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37   page: 539-541   1994

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  535. PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELLS WITH ABRUPT INTERFACES FORMED BY SEGREGANT-ASSISTED GROWTH

    N. Usami, S. Fukatsu and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2304-2306   1994

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  536. OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2344-2347   1994

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  537. BAND-EDGE PHOTOLUMINESCENCE OF SIGE/STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37 ( 4-6 ) page: 933-936   1994

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  538. A SI1-XGEX/SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 136   page: 355-360   1994

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  539. GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori and K. Okumura

    J. Cryst. Growth   Vol. 136   page: 315-321   1994

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  540. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 25 ) page: 3509-3511   1993.12

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  541. REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 20 ) page: 2789-2791   1993.11

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  542. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 32 ( 10A ) page: L1391-L1393   1993.10

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  543. SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

    K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito and K. Nakagawa

    Surface Science   Vol. 295 ( 3 ) page: 335-339   1993.10

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  544. LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 12 ) page: 1651-1653   1993.9

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  545. HYBRID SI MOLECULAR-BEAM EPITAXIAL REGROWTH FOR A STRAINED SI1-XGEX/SI SINGLE-QUANTUM-WELL ELECTROLUMINESCENT DEVICE

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 17 ) page: 2414-2416   1993.8

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  546. HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    Applied Physics Letters   Vol. 63 ( 7 ) page: 967-969   1993.8

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  547. ABRUPT COMPOSITIONAL TRANSITION IN LUMINESCENT SI1-XGEX/SI QUANTUM-WELL STRUCTURES FABRICATED BY SEGREGANT ASSISTED GROWTH USING SB ADLAYER

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 3 ) page: 388-390   1993.7

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  548. DISLOCATION GLIDE MOTION IN HETEROEPITAXIAL THIN-FILMS OF SI1-XGEX/SI(100)

    Y. Yamashita, K. Maeda, K. Fujita, N. Usami, K. Suzuki, S. Fukatsu, Y. Mera and Y. Shiraki

    Philosophical Magazine Letters   Vol. 67 ( 3 ) page: 165-171   1993.3

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  549. IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION

    S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 401-405   1993

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  550. INTENSE PHOTOLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 489-493   1993

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  551. OBSERVATION OF ELECTROLUMINESCENCE ABOVE ROOM-TEMPERATURE IN STRAINED P-TYPE SI0.65GE0.35/SI(111) MULTIPLE-QUANTUM WELLS

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    J. Cryst. Growth   Vol. 127   page: 1083-1087   1993

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  552. LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 32 ( 3B ) page: 1502-1507   1993

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  553. LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 11 ( 3 ) page: 895-898   1993

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  554. PHOTOGENERATION AND TRANSPORT OF CARRIERS IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 11A ) page: L1525-L1528   1992.11

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  555. QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 9B ) page: L1319-L1321   1992.9

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  556. OBSERVATION OF DEEP-LEVEL-FREE BAND EDGE LUMINESCENCE AND QUANTUM CONFINEMENT IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 61 ( 14 ) page: 1706-1708   1992.8

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  557. ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida and K. Nakagawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1015-L1017   1992.8

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  558. BAND-EDGE LUMINESCENCE OF STRAINED SIXGE1-X/SI SINGLE QUANTUM-WELL STRUCTURES GROWN ON SI(111) BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1018-L1020   1992.8

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    Language:English   Publishing type:Research paper (scientific journal)  

  559. SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    THIN SOLID FILMS   Vol. 222   1992

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/0040-6090(92)90025-7

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Books 18

  1. 多結晶材料情報学

    宇佐美徳隆、大野裕、沓掛健太朗、工藤博章、小島拓人、横井達矢( Role: Joint author)

    共立出版  2024 

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    Language:Japanese Book type:Scholarly book

  2. カーボンニュートラルへの化学工学

    ( Role: Joint author)

    丸善出版  2023.1  ( ISBN:978-4-621-30772-4

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    Total pages:256   Language:Japanese

  3. ハイドロジェノミクス

    後藤 和泰、宇佐美 徳隆( Role: Joint author ,  4.2 水素ドープ太陽電池)

    共立出版  2022.1  ( ISBN:978-4-320-04498-2

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    Language:Japanese

  4. 脱炭素への工学 Reviewed

    宇佐美 徳隆( Role: Joint author ,  第3章3.1 太陽電池の技術動向 )

    三恵社  2021.12  ( ISBN:978-4-86693-542-3

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    Total pages:263   Responsible for pages:12   Language:Japanese Book type:Scholarly book

  5. 太陽電池とLEDの原理

    Adrian Kitai著 宇佐美 徳隆 監訳( Role: Joint author)

    丸善  2013.7 

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    Language:Japanese

  6. 太陽電池技術ハンドブック 4.2.3 シリコン多結晶の欠陥・組織と評価

    宇佐美 徳隆( Role: Joint author)

    オーム社  2013.5 

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    Language:Japanese

  7. "第2章第3節 SiGe量子ドット系", "量子ドット太陽電池の最前線"

    豊田太郎(監修)( Role: Joint author)

    シーエムシー出版  2012 

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    Language:Japanese

  8. "第3編第2章 太陽電池の基礎知識", "スマートハウスの発電・蓄電・給電技術の最前線"

    田路 和幸 (監修) ( Role: Joint author)

    シーエムシー出版  2011 

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    Language:Japanese

  9. "第1章第4節 SiGe量子ドットのエピタキシャル成長", "量子ドットエレクトロニクスの最前線"

    荒川泰彦 他41名( Role: Joint author)

    NTS社  2011 

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    Language:Japanese

  10. "Chapter 4. Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications" in "SiGe nanostructures: materials science, technology and applications"

    edited by Y. Shiraki, and N. Usami( Role: Joint author)

    Woodhead publishing  2011 

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    Language:English

  11. 太陽電池の基礎と応用 シリコン太陽電池

    宇佐美 徳隆( Role: Joint author)

    培風館  2010.7 

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    Language:Japanese

  12. 「太陽電池の物理」

    Peter Würfel 著、宇佐美 徳隆、石原 照也、中嶋 一雄監訳( Role: Joint author)

    丸善  2010 

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    Language:Japanese

  13. "Chapter 6. Fundamental understanding of subgrain boundaries" in "Advances in Materials Research 14, Crystal Growth of Si for Solar Cells"

    Edited by K. Nakajima, and N. Usami( Role: Joint author)

    Springer  2009 

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    Language:English

  14. "Chapter 10. High-quality Si multicrystals with same grain orientation and large grain size by the new dendritic casting method for high-efficiency soalr cell applications" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  15. "Chaper 12. Floating cast method as a new growth method of silicon bulk multicrystals for solar cells" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  16. "Chapter 11. Growth of high-quality polycrystalline Si ingot with same grain orientation using dendritic casting method" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  17. "III/34C3. Single and coupled quantum wells:SiGe" in "Landolt-Börnstein New Series"

    Edited by E. Kasper and C. Klingshirn( Role: Joint author)

    Springer  2007 

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    Language:English

  18. "Chapter 6.6. SiGe quantum structures" in "Mesoscopic Physics and Electronics"

    Edited by T. Ando, Y. Arakawa, K. Furuya, S. Komiyama, and S. Nakashima( Role: Joint author)

    Springer-Verlag  1998 

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    Language:English

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MISC 4

  1. Pioneering Multicrystalline Informatics

    Noritaka USAMI

    JSAP Review     2024.1

  2. 多結晶材料情報学の開拓 Reviewed

    宇佐美徳隆

    応用物理   Vol. 92 ( 11 ) page: 662 - 667   2023.11

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    Language:Japanese  

    DOI: https://doi.org/10.11470/oubutsu.92.11_662

  3. 太陽電池の高性能化に向けたヘテロ界面制御 Invited Reviewed

    後藤和泰、宇佐美徳隆

    表面と真空   Vol. 66   page: 86 - 90   2023.1

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    Authorship:Last author   Language:Japanese  

    DOI: 10.1380/vss.66.86

  4. 太陽光発電へのインフォマティクス応用 Invited International coauthorship

    宇佐美 徳隆

    太陽光発電協会会誌     2021.4

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)  

Presentations 807

  1. 多結晶Siの結晶成長における界面形状が応力に与える影響

    田近陽輝, 沓掛健太朗, 小島拓人, 劉鑫, 田中博之, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.22 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  2. 反応性力場分子動力学法を用いたシリコン酸化膜中のシリコンナノ結晶形成プロセスの解析

    田村玄汰, 上根直也, 後藤和泰, 宇佐美徳隆, 徳増崇

    第71回応用物理学会春季学術講演会  2024.3.25 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学   Country:Japan  

  3. 原子層堆積法で作製したTiOx:Nb層の導入によるTiOx/SiOy/c-Siヘテロ構造のパッシベーション性能の向上

    深谷昌平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  4. CYTOP/BaTiO3ナノ粒子複合膜を用いた薄膜系直流水滴発電デバイス

    王海涛, 黒川康良, 王嘉, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  5. Pドープ/Bドープ ナノ結晶Si/アモルファスSi複合薄膜の熱電デバイス応用

    柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 伊藤孝至, 宇佐美徳隆, 黒川康良

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  6. 印刷とパルスレーザーアニールによるGe基板上へのGeSn薄膜成長

    佐藤剛志, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  7. 印刷とパルスレーザーアニールによるSi基板上へのSiGe薄膜成長

    佐藤剛志, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  8. 印刷と焼成によるSiGe 薄膜の液相成長メカニズム

    伊藤耕平, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  9. Multicrystalline informatics: A methodology to advance materials science by unraveling complex phenomena Invited International conference

    Noritaka Usami

    Colloquium at Department of Physics, City University of Hong Kong  2024.3.8  City University of Hong Kong

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    Event date: 2024.3

    Language:English  

    Country:Hong Kong  

  10. 名古屋大学におけるカーボンニュートラルに向けた取り組み Invited

    宇佐美 徳隆

    第三回カーボンニュートラルシンポジウム  2024.3.6 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:山形大学   Country:Japan  

  11. Challenges of Material Science for Realization of a Decarbonized Society Invited International conference

    N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Korea University   Country:Korea, Republic of  

  12. Effect of localized hydrogen on crystal tilting in strained SiGe substrates International conference

    Y. Yoneyama, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  13. Nano-textured surfaces of c-Si suitable for perovskite/silicon tandem solar cells by anisotropic alkaline etching International conference

    H. Yamaguchi, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  14. 3D reconstruction of mono-like Si structure and analysis of dislocation clusters International conference

    H. Hirono, H. Matsuo, H. Tanabe, Y. Kurokawa, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  15. Fabrication and Performance Evaluation of Thermoelectric Mg2Si Compounds Synthesized Using Silicon Extracted from Discarded Solar Panels International conference

    K. Hanzawa, S. Kato, K. Yamanaka, T. Doi, Y. Kurokawa, N. Usami, T. Itoh

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  16. Investigation of the Influence of crucible geometry on the vertical Bridgman growth of Mg2Si single crystal by numerical simulation International conference

    K. Asakura, X. Liu, H. Udono, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  17. Wide-area quantum computation substrate evaluation using radio-frequency resonant circuits and gate-controlled Si devices International conference

    K. Masuda, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  18. Stress analysis and dislocation cluster generation in multicrystalline Si with artificial drain boundaries International conference

    H. Tajika, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  19. Crystal growth of group IV mixed crystal thin films using screen-printing and pulse laser annealing International conference

    T. Sato, S. Suzuki, H. Minamiyama, M. Dhamrin, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  20. Improvement of Passivation Performance of TiOx/SiOy/c-Si Heterostructure by Introducing an Atomic-Layer-Deposited TiOx:Nb Layer International conference

    S. Fukaya, K. Gotoh, Y. Kurokawa, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  21. Investigation of deposition conditions for multilayer passivation films ​using Bayesian optimization and hydrogen concentration grouping​ International conference

    S. Kondo, Y. Kurokawa, K. Gotoh, K. Kutsukake, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  22. 脱炭素社会創造に向けたシリコン系材料の多様な結晶成長とデバイス応用 Invited

    宇佐美 徳隆

    電気学会東海支部学術講演会  2023.12.19  電気学会東海支部

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:愛知工業大学  

  23. Development of 2-inch diameter Mg2Si substrates toward a low-costand environmentally friendly SWIR detector: a practical approach using simulations to avoid the crack formation and advance the experiments International conference

    Y. Kimura, X. Liu, N. Usami, S. Sakane and H. Udono

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  24. How to generate dislocation clusters during cast-growth of silicon ingots? International conference

    Y. Ohno, H. Yoshida, T. Yokoi, K. Matsunaga, K. Yamakoshi, K. Kutsukake, T. Kojima, H. Kudo, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  25. Development of crystal orientation analysis for grain boundary structure in Ba-122 bulk International conference

    Y. Shimada, Y. Hasegawa, S. Tokuta, K. Muraoka, T. Kojima , Z. Guo, S. Hata, H. Kudo, N. Usami, A. Yamamoto

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  26. Analysis of dislocation cluster generation behavior in polycrystalline Si using twin networks International coauthorship International conference

    K. Torii, T. Kojima, K. Kutsukake, H. Kudo, P. Krenckel, S. Riepe, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  27. Effect of Illumination Direction in Data Augmentation Process in Semantic Segmentation of Dislocation Clusters with Multicrystalline Silicon Wafer Images with embedded Crystallographic Orientation Information International conference

    H. Kudo, T. Kojima, T. Matsumoto, K. Kutsukake, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  28. Thermal Boundary Resistance Measurement of Structure Controlled Grain Boundaries by Laser Heterodyne Photothermal Displacement Method International conference

    T. Harada, H. Tajika, T. Iwakiri, K. Kutsukake, N. Usami, T. Ikari, A. Fukuyama

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  29. 粒界ネットワーク解析を用いたアルミナ微小粒結晶成長過程の推察

    池田翔太郎, 小島拓人, 沓掛健太郎, 宇佐美徳隆

    第52回結晶成長国内会議  2023.12.6  日本結晶成長学会

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    Event date: 2023.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋   Country:Japan  

  30. Recall estimation of reference identification by Newton’s cooling law International conference

    Yuji Fujita, Noritaka Usami, Fujii Toshiaki, Hiroaki Nagai

    Complex Networks 2023  2023.11.30 

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    Event date: 2023.11

    Language:English   Presentation type:Poster presentation  

  31. Demonstration of Iron-based Superconducting Magnet through Complemental Researcher & Bayesian-driven Process Design and Twinning Network Graph Analysis International conference

    A. Yamamoto, S. Ishiwata, S. Kikuchi, Y. Hasegawa, S. Tokuta, A. Ishii, A. Yamanaka, Y. Shimada, Z. Guo, S. Hata, T. Kojima, K. Kutsukake, H. Kudo, N. Usami

    2023 MRS Fall Meeting & Exhibit  2023.11.29 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Oral presentation (general)  

  32. Thermoelectric properties of P-doped and B-doped polycrystalline silicon thin films International conference

    K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, T. Itoh, N. Usami, Y. Kurokawa

    2023 MRS Fall Meeting & Exhibit  2023.11.28 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Poster presentation  

  33. Small negative effect of domain boundary on carrier lifetime of BaSi2 absorber films International conference

    K.O. Hara, R. Takagaki, K. Arimoto, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.10 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  34. Application of informatics to photovoltaic research Invited International conference

    Noritaka Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.8 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  35. Improvement of open-circuit voltage and fill factor of silicon quantum dots solar cells by bayesian optimization process International conference

    Y. Kurokawa, F. Kumagai, K. Gotoh, S. Miyamoto, S. Kato, K. Kutsukake, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  36. Passivation enhancement mechanism of TiOx/c-Si heterostructures prepared by atomic layer deposition International conference

    Y. Michishita, K. Gotoh, S. Fukaya, Y. Kurokawa, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  37. Bayesian optimization of carrier selectivity of p-type silicon nano-crystal/silicon oxide compound layer International conference

    K. Mizutani, K. Gotoh, Y. Kurokawa, K. Kutsukake, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  38. TiOx:Nb層の導入によるTiOx/SiOy/Si ヘテロ構造のパッシベーション性能の向上

    深谷昌平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第10回 応用物理学会 名古屋大学 ステューデントチャプター東海地区学術講演会  2023.11.3 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋   Country:Japan  

  39. Pドープ/Bドープ poly-Si薄膜の熱電特性評価

    柴田 啓介、加藤 慎也、黒澤 昌志、後藤 和泰、宮本 聡、伊藤 孝至、宇佐美 徳隆、黒川 康良

    第84回応用物理学会秋季学術講演会  2023.9.23  応用物理学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  40. 双晶ネットワークを用いた多結晶シリコンにおける 転位クラスター発生挙動の解析

    鳥居 和馬、小島 拓人、沓掛 健太朗、工藤 博章、宇佐美 徳隆

    第84回応用物理学会秋季学術講演会  2023.9.19  応用物理学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  41. Improved bottom cell current in perovskite/silicon tandem solar cells by double-sided nanopyramid Si texture

    Y. Li, H. Sai, C. McDonald, Z. Xu, Y. Kurokawa, N. Usami, T. Matsui

    2023.9.21 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  42. Development by using functional grain boundary of n-type mono-cast silicon for solar cells International conference

    H. Matsuo, H. Tanabe, and N. Usami

    40th European Photovoltaic Solar Energy Conference and Exhibition  2023.9.19 

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    Event date: 2023.9

    Language:English   Presentation type:Poster presentation  

    Country:Portugal  

  43. Simultaneous Optimization of Crystal Growth Furnace and Process Using Crystal Growth Simulation and Machine Learning International conference

    H. Tanaka, K. Kutsukake, X. Liu, T. Kojima, and N. Usami

    40th European Photovoltaic Solar Energy Conference and Exhibition  2023.9.18 

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    Event date: 2023.9

    Language:English   Presentation type:Poster presentation  

    Country:Portugal  

  44. カーボンニュートラルに向けた名古屋大学脱炭素社会創造センターの取り組みと太陽光発電に関する研究 Invited

    宇佐美 徳隆

    令和5年 電気学会 基礎・材料・共通部門大会  2023.9.9  電気学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  45. Growth of Epitaxial BaSi2 Films with Carrier Lifetime over 2 μs by Close-Spaced Evaporation International conference

    Kosuke O. Hara, Ryota Takagaki, Keisuke Arimoto, Noritaka Usami

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  46. Process machine learning, twinning network graph analysis & record high trapped magnetic field of Ba122 polycrystalline bulk superconductors Invited International conference

    A. Yamamoto, S. Ishiwata, S. Kikuchi, Y. Hasegawa, S. Tokuta, A. Ishii, A. Yamanaka, Y. Shimada, Z. Guo, S. Hata, T. Kojima, K. Kutsukake, H. Kudo and N. Usami

    The 13th International Workshop on Processing and Applications of Superconducting (RE)BCO Materials  2023.8.31 

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    Event date: 2023.8 - 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  47. SiGe epitaxial growth via pulsed laser annealing of Al-Ge pastes on Si International conference

    T. Sato, S. Miyamoto, L. Xuan, S. Suzuki, M. Dhamrin, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.7.31 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  48. Mg2Si crystal growth by the vertical Bridgman method: scale-up and optimization by modeling and growth experiments International conference

    . Liu, T. Umehara, H. Udono and N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.8.1 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Italy  

  49. Optimization of temperature distribution transition in directional solidification method without restriction of growth furnace structure International conference

    H. Tanaka, K. Kutsukake, T. Kojima, X. Liu, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.7.31 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  50. Stress analysis of multicrystalline Si with artificial grain boundaries to investigate the generation mechanism of dislocation clusters International conference

    H. Tajika, K. Kutsukake, T. Kojima, X. Liu, H. Tanaka, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.8.1 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  51. Impact of Silicon Pyramid Texture Size on Perovskite/Silicon Tandem Solar Cell Performance International conference

    Y. Li, H. Sai, C. McDonald, Z. Xu, Y. Kurokawa, N. Usami, T. Matsui

    3rd tandemPV International Workshop  2023.7.7 

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    Event date: 2023.7

    Language:English   Presentation type:Poster presentation  

    Country:France  

  52. カーボンニュートラルに関する大学間連携とキャンパスでの取組 Invited

    宇佐美 徳隆

    第1回カーボンニュートラル共創シンポジウム・プレイベント  2023.7.5 

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    Event date: 2023.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  53. 太陽光発電の歴史の振り返り Invited

    宇佐美徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都   Country:Japan  

  54. 原子層堆積法で作製したTiOx/c-Siヘテロ構造のパッシベーション性能向上機構 Invited

    道下 悠登,深谷 昌平,後藤 和泰,黒川 康良 ,宇佐美 徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  55. 廃棄結晶シリコン太陽電池から作製した高機能シリコンナノ粒子 Invited

    加藤 慎也,曽我 哲夫,宇佐美 徳隆 ,土居 大亮,黒川 康良

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  56. p型シリコンナノ結晶/酸化シリコン複合膜におけるキャリア選択能の向上 Invited

    水谷 和嗣,後藤 和泰, 黒川 康良, 沓掛 健太朗, 宇佐美 徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  57. Numerical simulation study for analysis of hydrogenated amorphous silicon/crystalline silicon heterostructure by Reactive Molecular Dynamics Method International conference

    K. Inoue, N. Uene, K. Gotoh, Y. Kurokawa, T. Tokumasu, N. Usami

    50th IEEE Photovoltaic Specialists Conference  2023.6.11 

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    Event date: 2023.6

    Language:English   Presentation type:Poster presentation  

    Venue:San Juan   Country:Puerto Rico  

  58. Influence of insertion position of a LiF buffer layer on passivation performance of crystalline Si/SiOy/TiOx/Al heterostrucures International conference

    S. Fukaya, K. Gotoh, T. Matsui, H. Sai, Y. Kurokawa, N. Usami

    50th IEEE Photovoltaic Specialists Conference  2023.6.11 

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    Event date: 2023.6

    Language:English   Presentation type:Poster presentation  

    Venue:San Juan   Country:Puerto Rico  

  59. Improvement of Passivation Performance of ​Silicon Nanocrystal/Silicon Oxide Compound Layer ​by Two-step Hydrogen Plasma Treatment​ International conference

    M. Matsumi, K. Gotoh, M. Wilde, Y. Kurokawa, K. Fukutani, N. Usami

    13th International Conference on Silicon Photovoltaics 2023  2023.4.13 

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    Event date: 2023.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Delft   Country:Netherlands  

  60. Implementation of Nanoimprinted Light Trapping Structure Into Si Heterojunction Solar Cells International conference

    Y. Kurokawa, Y. Kimata, Y. Iseki, K. Gotoh, S. Miyamoto, R. Ozaki, K. Nakamura, Y. Ohshita, N. Usami

    13th International Conference on Silicon Photovoltaics 2023  2023.4.11 

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    Event date: 2023.4

    Language:English   Presentation type:Poster presentation  

    Venue:Delft   Country:Netherlands  

  61. Mover Electrode/Stater with Double Electrodes Triboelectric Nanogenerator with High Instantaneous Current Triggered by a Surficial Contact Electrode International coauthorship International conference

    H. Wang, Y. Kurokawa, K. Gotoh, S. Kato, J. Zhang and N. Usami

    MRS Spring Meeting & Exhibit  2023.4.11 

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    Event date: 2023.4

    Language:English   Presentation type:Poster presentation  

  62. 太陽光発電主力電源化に向けた次世代技術開発 Invited

    宇佐美 徳隆

    日本化学会第103春季年会  2023.3.23 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

  63. Ba-122多結晶バルクの粒界組織における新規結晶方位解析法開発

    嶋田 雄介,長谷川 友大,徳田 進ノ助,村岡 幸樹,小島 拓人,郭 子萌,波多 聰,工藤 博章,宇佐美 徳隆,山本 明保

    第70回応用物理学会春季学術講演会  2023.3.16 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  64. BaSi2薄膜の結晶粒界とキャリア寿命の関係

    原康祐, 有元圭介, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  65. シリコンのキャスト成長過程における非対称傾角粒界からの転位発生 International coauthorship

    大野裕, 吉田秀人, 横井達矢, 山腰健太, 小島拓人, 松永克志, Krenckel Patricia, Riepe Stephan, 宇佐美徳隆佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  66. 水素化アモルファスシリコン/結晶シリコンヘテロ構造の解析に向けた反応性力場分子動力学法による数値シミュレーション研究

    井上和磨, 上根直也, 後藤和泰, 黒川康良, 徳増崇, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  67. 多結晶Siの転位密度に対する界面形状と成長時間の影響に関する統計的調査

    田中博之, 沓掛健太朗, 小島拓人, 劉鑫, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  68. ベイズ最適化を援用したシリコン量子ドット積層構造の高品質化と太陽電池応用

    熊谷風雅, 後藤和泰, 加藤慎也, 宮本聡, 沓掛健太朗, 宇佐美徳隆, 黒川康良

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  69. 2段階水素プラズマ処理によるシリコンナノ結晶/酸化シリコン複合膜のパッシベーション性能向上

    松見優志, 後藤和泰, ビルデ マーカス, 黒川康良, 福谷克之, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  70. TiOx/SiOy/結晶Siヘテロ構造におけるAl成膜後のパッシベーション性能に及ぼすLiF層の効果

    深谷昌平, 後藤和泰, 松井卓矢, 齋均, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  71. 透明導電膜の成膜による結晶シリコンへのプロセスダメージの評価

    小島遥希, 西原達平, 伊藤佑太, Lee Hyunju, 後藤和泰, 宇佐美徳隆, 原知彦, 中村京太郎, 大下祥雄, 小椋厚志

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  72. SiGe薄膜における歪み緩和と結晶傾斜への水素局在効果

    加納光樹, 宮本聡, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  73. コロイダルリソグラフィ法とナノインプリント法による近赤外光に特化した光閉じ込め構造の作製

    木股佑斗, 後藤和泰, 宮本聡, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  74. 多結晶材料における結晶欠陥発生予測モデルの構築と解析

    原京花, 小島拓人, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第70回応用物理学会春季学術講演会  2023.3.18 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  75. Research on next-generation PV technology in Japan Invited International conference

    Noritaka Usami

    2nd Indo -Japan Joint Workshop on Photovoltaics  2023.3.9 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Chennai   Country:India  

  76. An overview of the “Multicrystalline Informatics” project Invited International conference

    Noritaka Usami

    3rd International Symposium on Modeling of Crystal Growth Processes and Devices  2023.3.7 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Chennai   Country:India  

  77. Multi-scale modeling and optimization from the process stability to the grain evolution for the mono-like Si ingot growth Invited International conference

    X. Liu, Y. Dang, H. Tanaka, K. Kutsukake, T. Ujihara, and N. Usami

    3rd International Symposium on Modeling of Crystal Growth Processes and Devices  2023.3.8 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Chennai   Country:India  

  78. カーボンニュートラルに向けた名古屋大学での取り組み Invited

    宇佐美 徳隆

    新潟大学カーボンニュートラル融合技術研究センター第 1 回研究会  2023.3.3 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  79. 多結晶材料情報学を基盤とした材料開発の新展開 Invited

    宇佐美徳隆

    nano tech 特別シンポジウム  2023.2.2 

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    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  80. 太陽光発電主力電源化に向けた先端材料プロセス Invited

    宇佐美 徳隆

    第27回宮崎大学未来エネルギープロジェクト講演会  2022.12.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  81. Improvement of contact resistivity by boron delta-doping in p-type amorphous silicon surface International conference

    Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Yoshiko Iseki, Kyotaro Nakamura, Yasuyoshi Kurokawa, Yoshio Ohshita and Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  82. Reflection measurement system with telecentric optics for prediction of crystal orientation in large-scale multicrystalline structure International conference

    Takuto Kojima, Kyoka Hara, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  83. Multiscale modeling on the grain evolution of the SMART ingot growing process by the 3D CAFE method International conference

    Xin Liu, Hiroyuki Tanaka, Kentaro Kutsukake, Takuto Kojima, and Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  84. 3D stress analysis of multicrystalline Si with artificial grain boundaries and evaluation of dislocation cluster distribution International conference

    Haruki Tajika, Kentaro Kutsukake, Takuto Kojima, Xin Liu, Hiroyuki Tanaka, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  85. Dislocation generation via the formation of higher-order twin boundaries in mono-cast silicon International conference

    Yutaka Ohno, Kenta Yamakoshi, Takuto Kojima, Hideto Yoshida, Patricia Krenckel, Stephan Riepe, Koji Inoue, Yasuyoshi Nagai, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  86. Image translation from two optical and one grain boundary images to distribution image of generation points of dislocations clusters in a multicrystalline silicon wafer International conference

    Hiroaki Kudo, Takuto Kojima, Kentaro Kutsukake, Tetsuya Matsumoto, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  87. A neural network-based estimation of the generation of dislocation clusters in multicrystalline silicon International conference

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  88. Study on carrier transport pathways in silicon nanocrystal/silicon oxide composite films International conference

    A. Arata, K. Gotoh, S. Yamada, Y. Kurokawa, T. Itoh, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  89. Effect of a lithium fluoride layer on the passivation performance of metalized titanium oxide/silicon oxide/silicon heterostructures International conference

    S. Fukaya, K. Gotoh, T. Matsui, H. Sai, Y. Kurokawa, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  90. Photoconductivity measurement of silicon quantum dot multilayers for the Bayesian optimization International conference

    F. Kumagai, K. Gotoh, S. Miyamoto, S. Kato, N. Matsuo, S. Yamada, T. Itoh, N. Usami, Y. Kurokawa

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  91. Application of hydrogenated silicon nanocrystal/silicon oxide compound layer to crystalline silicon solar cells International conference

    M. Matsumi, K. Gotoh, S. Miyamoto, Y. Kurokawa, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  92. Post-annealing effects on dual-layered hydrogenated amorphous silicon/crystalline silicon heterointerfaces International conference

    K. Inoue, K. Gotoh, K. Kutsukake, N. Sawamoto, T. Nishihara, Y. Kurokawa, A. Ogura and N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  93. Simulation study of boron delta-doping layer on p-type hydrogenated amorphous silicon in silicon heterojunction solar cells International conference

    K. Gotoh, R. Ozaki, M. Morimura, Y. Iseki, K. Nakamura, Y. Kurokawa, Y. Ohshita and N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.16 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  94. A statical study of the effect of interface shape and growth time on dislocation density in multicrystalline Si International conference

    H. Tanaka, K. Kutsukake, T. Kojima, X. Liu, N. Usami

    The 8th International Symposium on Advanced Science and Technology of Silicon Materials  2022.11.8 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Okayama   Country:Japan  

  95. e-CSTIにおける研究データ連結の確からしさ

    藤田裕二、宇佐美徳隆、藤井俊彰、永井博昭

    研究・イノベーション学会第37回年次学術大会  2022.10.29 

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    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  96. 引用構造のフラクタル次元として定義されるスケール不変な派生h-index

    藤田裕二、宇佐美徳隆

    研究・イノベーション学会第37回年次学術大会  2022.10.29 

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    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  97. Multiscale modeling and optimization on the solidification and the grain evolution of the SMART ingot grown by DS-Si process Invited International coauthorship International conference

    X. Liu, H. Tanaka, K. Kutsukake, and N. Usami

    The 10th International Workshop on Modeling in Crystal Growth  2022.10.17 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Xian   Country:China  

  98. Growth of mc-Silicon ingot by DS Process: Computational Modeling, Experimental and Machine Learning Studies Invited International coauthorship International conference

    M. Srinivasan, P. Ramasamy, N. Usami

    The 10th International Workshop on Modeling in Crystal Growth  2022.10.17 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Xian   Country:China  

  99. Application of Silicon Nanocrystals to Energy Harvesting Devices Invited International conference

    Y. Kurokawa, F. Kumagai, K. Shibata, K. Gotoh, S. Miyamoto, S. Kato, and N. Usami

    Advanced Materials World Congress  2022.10.13 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  100. Improvement of Passivation Performance of Silicon Nano-crystal/Silicon Oxide Compound Layer by Hydrogen Plasma Treatment International conference

    Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami

    WCPEC-8  2022.9.27 

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    Event date: 2022.9

    Presentation type:Poster presentation  

    Venue:Milano   Country:Italy  

  101. Design of a Growth Process of High-Quality Quasi-Monocrystalline Silicon Ingot Integrating Experimental, Theoretical, Computational, and Data Sciences International conference

    Noritaka Usami, Xin Liu, Yusuke Fukuda, Hiroyuki Tanaka, Kentaro Kutsukake, Takuto Kojima

    WCPEC-8  2022.9.26 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:Milano   Country:Italy  

  102. Fabrication of Silicon Heterojunction Solar Cells with Light Trapping Structures Specialized for Near-Infrared Light by Nanoimprinting International conference

    Yuto Kimata, Kazuhiro Gotoh, Satoru Miyamoto, Shinya Kato, Yasuyoshi Kurokawa, Noritaka Usami

    WCPEC-8  2022.9.27 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:Milano   Country:Italy  

  103. Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer International conference

    Haitao Wang, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Shinya Kato, Shigeru Yamada, Takashi Itoh, Noritaka Usami

    2022SSDM 

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    Event date: 2022.9

    Country:Japan  

  104. Preparation and thermoelectric characterization of boron-doped silicon nanocrystals/silicon oxide multilayers International conference

    Keisuke Shibata , Shinya Kato , Masashi Kurosawa , Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami, Yasuyoshi Kurokawa

    2022SSDM 

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    Event date: 2022.9

    Country:Japan  

  105. キャスト成長 シリコンにおけるΣ3粒界からの転位発生の微視的描像

    大野 裕 ,吉田 秀人,横井 達矢,松永 克志 ,井上 耕治,永井 康介,宇佐美 徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Venue:東北大学 ハイブリッド   Country:Japan  

  106. Boosting the output of droplet-based energy harvester by a CYTOP intermediate layer

    H. Wang, Y. Kurokawa, K. Gotoh, S. Miyamoto, S. Kato, S. Yamada, T. Itoh, N. Usami

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  107. ボロンドープしたシリコンナノ結晶/シリコン酸化膜積層構造の作製及び熱電特性評価

    柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 宇佐美徳隆, 黒川康良

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  108. 結晶方位分布を用いた多結晶シリコン成長挙動のインゴットスケール解析

    小島拓人, 原京花, 沓掛健太朗, 松本哲也, 工藤博章, 宇佐美徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  109. 金属製膜後のTiOx/SiOy/結晶Siヘテロ構造のパッシベーション性能におけるLiF中間層の導入による影響

    深谷昌平, 後藤和泰, 松井卓矢, 齋均, 黒川康良, 宇佐美徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  110. 多結晶Mg2Si組織の結晶粒成長挙動の解析

    弟子丸拓巳, 山腰健太, 沓掛健太朗, 小島拓人, 梅原翼, 鵜殿治彦, 宇佐美徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  111. Al-Ge合金ペーストのパルスレーザー熱処理によるSi基板上へのSiGe薄膜成長

    佐藤剛志, 宮本聡, 鈴木紹太, ダムリン マルワン, 宇佐美徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  112. 人工粒界を含む多結晶Siの応力解析と転位クラスター分布の評価

    田近陽輝, 沓掛健太朗, 小島拓人, 劉鑫, 田中博之, 宇佐美徳隆

    2022年第83回応用物理学会秋季学術講演会 

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    Event date: 2022.9

    Presentation type:Oral presentation (general)  

    Venue:東北大学 ハイブリッド   Country:Japan  

  113. Post-annealing effects on the hydrogenated amorphous silicon/crystalline silicon heterointerfaces International conference

    Kazuma Inoue, Kazuhiro Gotoh, Kentaro Kutsukake, Naomi Sawamoto, Tappei Nishihara, Satoru Miyamoto, Yasuyoshi Kurokawa, Atsushi Ogura, and Noritaka Usami

    22nd International Vacuum Congress   2022.9 

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    Event date: 2022.9

    Venue:Sapporo   Country:Japan  

  114. Hydrogen depth profiles of hydrogenated amorphous silicon double layers on crystalline silicon International conference

    Kazuhiro Gotoh, Kazuma Inoue, Naomi Sawamoto, Tappei Nishihara, Markus Wilde, Satoru Miyamoto, Yasuyoshi Kurokawa, Atsuhi Ogura, Katsuyuki Fukutani, and Noritaka Usami

    22nd International Vacuum Congress   2022 

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    Event date: 2022.9

    Venue:Sapporo   Country:Japan  

  115. Hydrogen defect clustering in strained SiGe host matrixes International conference

    M. Kano, S. Miyamoto, Y. Kurokawa, and N. Usami

    22nd International Vacuum Congress  2022.9.13 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

  116. Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg on P-doped polycrystalline Si thin films and face-to-face annealing International conference

    K. Sato, Y. Kurokawa, K. Shibata, S. Kato, S. Miyamoto, K. Gotoh, T. Itoh and N. Usami

    9th International Symposium on Control of Semiconductor Interfaces  2022.9.5 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

  117. Multiscale analysis of dislocation generation at Σ3grain boundaries during cast growth of high-performance multicrystalline Si ingots International conference

    Yutaka Ohno, Koji Inoue, Yasuyoshi Nagai, KentaYamakoshi, Hiroyuki Tanaka, Xin Liu, Tatsuya Yokoi, Katsuyuki Matsunaga, Noritaka Usami, Takuto Kojima, Hiroaki Kudo, Kentaro Kutsukake, Hideto Yoshida

    19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors  

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    Event date: 2022.8 - 2022.9

    Venue:Online  

  118. Application of Bayesian optimization for high-efficiency silicon quantum dot solar cells Invited International conference

    Y. Kurokawa, F. Kumagai, S. Miyagawa, K. Gotoh, S. Miyamoto, K. Kutsukake, S. Kato, and N. Usami

    European Assembly of Advanced Materials Congress  2022.8.28 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  119. Analysis of Grain Growth Behavior of Multicrystalline Mg2Si International conference

    Takumi Deshimaru, Kenta Yamakoshi, Kentaro Kutsukake, Takuto Kojima, Tsubasa Umehara, Haruhiko Udono, Noritaka Usami

    2022 APACSilicide  2022.7.30 

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    Event date: 2022.7 - 2022.8

    Presentation type:Oral presentation (general)  

  120. B-Doped BaSi2 Thin Films Prepared by Thermal Evaporation for Hole Selective Contact International conference

    Y. Kurokawa, M. Fujiwara, K. Takahashi, Y. Nakagawa, K. Gotoh, and N. Usami

    Global Photovoltaic Conference 2022  2022.7.6 

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    Event date: 2022.7

    Language:English   Presentation type:Poster presentation  

  121. Impact of hydrogen plasma treatment pressure on passivation performance of silicon nano-crystal/silicon oxide compound layer

    2022.6.28 

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    Event date: 2022.6

    Presentation type:Poster presentation  

    Country:Japan  

  122. Photoconductivity Measurement of Silicon Quantum Dot Multilayers

    2022.6.28 

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    Event date: 2022.6

    Presentation type:Poster presentation  

    Country:Japan  

  123. TiOx/結晶Siヘテロ構造における電極製膜後のパッシベーション性能の定量的評価の検討

    深谷昌平, 後藤和泰, 松井卓矢, 齋均, 黒川康良, 宇佐美徳隆

    第19回次世代の太陽光発電シンポジウム  2022.6.28 

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    Event date: 2022.6

    Presentation type:Poster presentation  

    Venue:金沢 ハイブリッド   Country:Japan  

  124. ボロンデルタドープp型水素化アモルファスシリコンと太陽電池応用

    後藤和泰,尾崎亮,森村元勇,田中亜紀,伊関良子,中村京太郎,村松和郎,黒川康良,大下祥雄,宇佐美徳隆

    第19回次世代の太陽光発電シンポジウム  2022.6.28 

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    Event date: 2022.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:金沢 ハイブリッド   Country:Japan  

  125. 硼素dopingがaSi:H/cSi界面・cSi表面欠陥に及ぼす影響のFET-TEGによる評価

    林豊, 後藤和泰, 原知彦, 神岡武文, 尾崎亮, 森村元勇, 中村京太郎, 黒川康良, 宇佐美徳隆, 大下祥雄

    第19回次世代の太陽光発電シンポジウム  2022.6.28 

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    Event date: 2022.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:金沢 ハイブリッド   Country:Japan  

  126. 鉛フリー型ペロブスカイト太陽電池の開発研究に期待すること International conference

    宇佐美 徳隆

    JST未来社会創造事業「SnからなるPbフリーペロブ スカイト太陽電池の開発」キックオフ会議  2022.6.23 

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    Event date: 2022.6

    Presentation type:Oral presentation (keynote)  

    Venue:京都   Country:Japan  

  127. Fabrication of nanoimprinted light confinement structures for near-infrared light International conference

    Yuto Kimata, Kazuhiro Gotoh, Satoru Miyamoto, Yasuyoshi Kurokawa, Noritaka Usami

    The 8th Korea-Japan Joint Seminar on PV  2022.5.27 

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    Event date: 2022.5

    Presentation type:Poster presentation  

    Venue:Jeju, Korea, hybrid   Country:Korea, Republic of  

  128. Data-driven optimization of growth process of quasi-monocrystalline silicon ingot Invited International conference

    Noritaka Usami, Xin Liu, Kentaro Kutsukake

    The 8th Korea-Japan Joint Seminar on PV  2022.5.27 

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    Event date: 2022.5

    Presentation type:Oral presentation (invited, special)  

    Venue:Jeju, Korea, hybrid   Country:Korea, Republic of  

  129. Boron delta-doped hydrogenated amorphous silicon for improvement of contact resistivity International conference

    Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Aki Tanaka, Yoshiko Iseki, Kyotaro Nakamura, Kazuo Muramatsu, Yasuyoshi Kurokawa, Yoshio Ohshita, Noritaka Usami

    The 8th Korea-Japan Joint Seminar on PV  2022.5.27 

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    Event date: 2022.5

    Presentation type:Poster presentation  

    Venue:Jeju, Korea, hybrid   Country:Korea, Republic of  

  130. Spatially resolved implied open-circuit voltage of titania/silicon heterostructures after electrode deposition by using PL imaging International conference

    Shohei Fukaya, Kazuhiro Gotoh, Takuya Matsui, Hitoshi Sai, Yasuyoshi Kurokawa, Noritaka Usami

    The 8th Korea-Japan Joint Seminar on PV  2022.5.27 

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    Event date: 2022.5

    Presentation type:Poster presentation  

    Venue:Jeju, Korea, hybrid   Country:Korea, Republic of  

  131. Application of machine learning for crystal growth Invited International conference

    Noritaka Usami

    2nd Indian Summer School on Crystal Growth  2022.5.18 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (invited, special)  

  132. 非対称粒界の粒界構造を網羅する人工粒界形成とキャリア再結合速度への影響解明

    福田祐介,沓掛健太朗, 小島拓人, 大野裕, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催   Country:Japan  

  133. 双晶形成ネットワークグラフによる正方晶の焼結体組織解析

    小島拓人, 沓掛健太朗, 松本哲也, 工藤博章, 宇佐美徳隆, 嶋田雄介, 山本明保

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  134. 結晶方位推定のためのラインスキャン型反射特性測定装置の開発

    小島拓人, 原京花, 沓掛健太朗, 松本哲也, 工藤博章, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  135. Al-Ge合金ペーストによるSi(111)基板上へのSiGe混晶薄膜の成長

    福田啓介,宮本聡,鈴木紹太,中原正博,ダムリン マルワン,前田健作,藤原航三,宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  136. ゲート制御Si-MOSデバイスにおける非平衡ダイナミクスと電荷雑音評価

    佐藤克哉, 宮本聡, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  137. 応力解析による多結晶Si ナノファセット構造の転位発生への影響調査

    山腰健太, 大野裕, 沓掛健太朗, 小島拓人, 工藤博章, 田中博之, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  138. 窒化チタン/酸化チタン積層膜を用いた結晶シリコンヘテロ構造の電気的特性向上

    井上徹哉,後藤和泰, 黒川康良, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  139. Si基板上BaSi2近接蒸着膜の実効キャリア寿命

    原康祐, 高垣僚太, 有元圭介, 宇佐美徳隆

    第69回応用物理学会春季学術講演会  2022 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学+オンライン開催  

  140. Silicon nanopyramid texture fabricated by one-step solution process and its application to silicon heterojunction solar cells

    Y. Li, H. Sai, T. Matsui, and N. Usami

    2022 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  141. 脱炭素社会実現を加速する次世代太陽電池への期待 Invited

    宇佐美徳隆

    第14回 EAJ中部レクチャーin Webinar  2022.3.18 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  142. Impact of Plasma Treatment on Heterostructures for Silicon-Based Solar Cells Invited International conference

    Noritaka Usami

    ISPlasma2022  2022.3.6 

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    Event date: 2022.3

    Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:Nagoya University  

  143. 太陽電池用の結晶成長やセルプロセスへのインフォマティクス応用 Invited

    宇佐美徳隆

    第190回総研セミナー開催案内「次世代の太陽光発電システム」  2022.1.19 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京都市大学世田谷キャンパス   Country:Japan  

  144. Multicrystalline informatics for realistic 3D materials modeling and high-quality crystals Invited International conference

    Noritaka Usami

    Indo-Japan Workshop on "Silicon Crystal Growth for Photovoltaic Applications"  2022 

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  145. Features in optical image of generation points of dislocation clusters in multicrystalline silicon ingot predicted by transfer learning of convolutional neural network International conference

    H. Kudo, T. Kojima, T. Matsumoto, K. Kutsukake, and N. Usami

    Materials Research Meeting (MRM 2021)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  146. Bayesian optimization of hydrogen plasma treatment for reducing defects in silicon quantum dot multilayers International conference

    S. Miyagawa, K. Gotoh, S. Miyamoto, K. Kutsukake, S. Kato, N. Usami, and Y. Kurokawa

    Materials Research Meeting (MRM 2021)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  147. Design and fabrication of nanoimprinted optical confinement structure specialized for near-infrared light International conference

    Y. Kimata, K. Gotoh, S. Miyamoto, N. Usami, and Y. Kurokawa

    Materials Research Meeting (MRM 2021)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  148. Process optimization for the seeded directional solidification of Si ingot using CFD and machine learning International conference

    X. Liu, Y. Dang, H. Tanaka, K. Kutsukake, T. Ujihara, and N. Usami

    Materials Research Meeting (MRM 2021)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  149. Improvement of machine learning model for crystal orientation estimation by data augmentation International conference

    T. Kojima, K. Hara, K. Kutsukake, T. Matsumoto, H. Kudo, and N. Usami

    Materials Research Meeting (MRM 2021)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  150. Bayesian optimization of hydrogen plasma treatment for reducing defects in silicon quantum dot multilayers International conference

    F. Kumagai, S. Miyagawa, K. Gotoh, S. Miyamoto, K. Kutsukake, S. Kato, N. Usami, and Y. Kurokawa

    31st International Photovoltaic Science and Engineering Conference (PVSEC-31)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  151. The guideline for control of grain boundary configuration to suppress carrier recombination in multicrystalline silicon International conference

    Y. Fukuda, K. Kutsukake, T. Kojima, and N. Usami

    31st International Photovoltaic Science and Engineering Conference (PVSEC-31)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  152. Fabrication of all-solid-state semiconductor battery using TiOx:Nb for energy storage International conference

    K. Watanabe, K. Gotoh, S. Miyamoto, M. Motoyama, N. Usami, and Y. Kurokawa

    31st International Photovoltaic Science and Engineering Conference (PVSEC-31)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  153. Design and fabrication of nanoimprinted optical confinement structure specialized for near-infrared light International conference

    Y. Kimata, K. Gotoh, S. Miyamoto, Y. Kurokawa, and N. Usami

    31st International Photovoltaic Science and Engineering Conference (PVSEC-31)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  154. Effect of hydrogenation process on passivation performance of silicon nano-crystal/silicon oxide compound lay International conference

    M. Matsumi, K. Gotoh, M. Wilde, Y. Kurokawa, K. Fukutani, and N. Usami

    31st International Photovoltaic Science and Engineering Conference (PVSEC-31)  2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  155. 太陽電池材料SnドープSiGe薄膜の活性サイト位置のSn量の定量評価

    星翔太, 菅野友哉, 高野元輝, Keiko Widyanisa, 小林洋大, 富松優花, 木村耕治, 八方直久, 鈴木紹太, ダムリンマルワン, 福田啓介, 宮本聡, 宇佐美徳隆, 林好一, 大山研司

    第21回 日本中性子科学会年会  2021 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  156. Development of a realistic 3D model of multicrystalline Si structure using image processing and machine learning of optical images and finite element stress analysis on the model International conference

    Kenta Yamakoshi, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    2021 MRS Fall Meeting & Exhibit  2021.11 

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    Event date: 2021.11 - 2021.12

    Language:English  

    Venue:Boston & on-line   Country:United States  

  157. Continuous evaluation of carrier recombination velocity of grain boundaries in multicrystalline Si using machine learning

    Kentaro Kutsukake, Kazuki Mitamura, Takuto Kojima, Noritaka Usami

    2021 MRS Fall Meeting & Exhibit  2021.11 

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    Event date: 2021.11 - 2021.12

    Language:English  

    Venue:Boston & on-line   Country:United States  

  158. Twinning Network Graph Analysis on Ingot-scale Multicrystalline Structure International conference

    Takuto Kojima, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo, Noritaka Usami

    2021 MRS Fall Meeting & Exhibit  2021.11 

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    Event date: 2021.11 - 2021.12

    Language:English  

    Venue:Boston & on-line   Country:United States  

  159. Training Data Optimization and Error Analysis for Machine Learning-based Crystal Orientation Estimation International conference

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    2021 MRS Fall Meeting & Exhibit  2021.11 

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    Event date: 2021.11 - 2021.12

    Language:Japanese  

    Venue:Boston & on-line   Country:United States  

  160. 結晶方位情報を含む多次元光学イメージを用いた敵対的生成ネットワークによる蛍光イメージ生成

    工藤博章, 小島拓人, 松本哲也, 沓掛健太朗, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  161. 水素パッシベーションによるAs-doped n-BaSi2膜の分光感度向上及び第一原理計算を用いた考察

    青貫翔, 山下雄大, Z. Xu, 後藤和泰, 都甲薫, 宇佐美徳隆, D. Migas, 末益宗

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  162. 擬単結晶シリコン中の非対称∑27粒界における転位クラスター発生機構

    大野裕, 吉田秀人, 小島拓人, 山腰健太, 宇佐美徳隆, Patricia Krenckel, Stephan Riepe

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  163. TiOx/結晶Siヘテロ構造における電極製膜後のパッシベーション性能の定量的評価の検討

    深谷昌平, 後藤和泰, 松井卓矢, 齋均, 黒川康良, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  164. 多種データにより再現された結晶成長中の多結晶Si組織における応力解析

    山腰健太, 沓掛健太朗, 小島拓人, 工藤博章, 田中博之, 大野裕, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  165. Al-Ge合金ペーストを用いた多接合型太陽電池のためのSiGe混晶層形成

    福田啓介, 宮本聡, 中原正博, 鈴木紹太, ダムリン マルワン, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  166. 太陽電池用結晶シリコンの成長シミュレーションに対するパラメータ同定

    田中博之, 沓掛 健太朗, 小島拓人, 福田祐介, 劉鑫, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  167. 機械学習によるPL強度分布からの粒界再結合速度の推定と誤差検討

    沓掛健太朗,三田村和樹, 小島拓人, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  168. 機械学習を用いた結晶方位推定とその応用可能性

    原京花,小島拓人,沓掛健太朗,工博章,タモタラン ケルチバサン, マニッカム スリニバサン,ペルマルザミー ラマザミー,宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  169. 多結晶Si中の粒界構造の変化がキャリア再結合速度に与える影響

    福田祐介, 沓掛健太朗, 小島拓人, 大野裕, 宇佐美徳隆

    第18回次世代の太陽光発電システムシンポジウム  2021.10.15 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ,新潟   Country:Japan  

  170. Bayesian Optimization of Passivating Contacts for Crystalline Silicon Solar Cells Invited International conference

    Noritaka Usami

    240th ECS Meeting  2021.10.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Orland   Country:United States  

  171. 双晶形成ネットワークグラフによる多結晶インゴットの結晶組織解析

    小島 拓人, 沓掛健太朗, 松本 哲也, 工藤 博章, 宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.11 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  172. 機械学習による発光強度プロファイルからの粒界再結合速度の推定

    沓掛 健太朗,三田村 和樹, 小島 拓人, 宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.11 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  173. 機械学習による結晶方位推定における訓練データの最適化と誤差分析

    原 京花,小島 拓人, 沓掛 健太朗, 工藤 博章, 宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.11 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  174. 真空蒸着法により作製したMg₂Si薄膜の高品質化に向けたface-to-faceアニール効果

    佐藤 海誓,宮本 聡,後藤 和泰, 黒川 康良, 伊藤 孝至, 宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.11 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  175. シリコンナノ結晶/酸化シリコン複合膜におけるキャリア選択能の水素プラズマ処理温度依存性

    松見優志,後藤和泰,ビルデ マーカス,黒川康良,福谷克之,宇佐美徳隆

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  176. 実験とデータ科学的手法による3次元多結晶Siモデルの作成と有限要素応力解析

    山腰 健太, 沓掛 健太朗, 小島 拓人, 工藤 博章, 宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  177. ベイズ最適化を援用したシリコン量子ドット積層構造の欠陥低減

    熊谷風雅,宮川晋輔, 後藤和泰, 沓掛健太朗, 加藤慎也, 宇佐美徳隆, 黒川康良

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  178. 合金ペーストにより形成されるSiGe混晶層のその場観察と構造評価

    福田 啓介,宮本 聡,中原 正博,鈴木 紹太,ダムリン マルワン,前田 健作,藤原 航三,宇佐美 徳隆

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  179. a-Si:H層のPECVD成膜による結晶シリコンへのダメージの評価

    小島遥希、西原達平、後藤和泰、宇佐美徳隆、原友彦、大下祥雄、小椋厚志

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  180. マルチデータによる結晶成長熱流体シミュレーションのパラメータ同定

    田中博之 沓掛健太朗, 小島拓人, 劉鑫, 宇佐美徳隆

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  181. Multicrystalline Informatics for High-Performance Crystals Invited International conference

    Noritaka Usami, Takuto Kojima, Kentaro Kutsukake, Xin Liu, Hiroaki Kudo, Tetsuya Matsumoto, Tatsuya Yokoi, Yasuo Shimizu and Yutaka Ohno

    2021 International Conference on Solid State Devices and Materials  2021.9.6 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:on-line  

  182. High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate International conference

    Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, and Noritaka Usami

    2021 International Conference on Solid State Devices and Materials  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

  183. 真空蒸着法によるステンレス基板上へのBaSi2薄膜の作製

    陳 嘉坤,宮本 聡,後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第19回シリサイド系半導体・夏の学校  2021.8.21 

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    Event date: 2021.8

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  184. "DEVELOPMENT OF SILICON-NANOCRYSTALS-EMBEDDED SILICON OXIDE PASSIVATING CONTACTS FOR USE IN CRYSTALLINE SILICON SOLAR CELLS " Invited International conference

    "K. Gotoh, R. Tsubata, M. Matsumi, M. Wilde, T. Inoue, Y. Kurokawa, K. Fukutani and N. Usami"

    Global Photovoltaic Conference 2021 (GPVC 2021)  2021.7.9 

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    Event date: 2021.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hybrid (Gwangju/virtural)  

  185. 太陽電池用シリコン系材料の結晶成長の新展開 Invited

    宇佐美 徳隆

    R032産業イノベーションのための結晶成長委員会第1回研究会  2021.7.9 

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    Event date: 2021.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  186. Multicrystalline informatics: A methodology to realize high-performance crystals Invited International conference

    Noritaka Usami, Takuto Kojima, Kentaro Kutsukake, Xin Liu, Hiroaki Kudo, Tetsuya Matsumoto, Tatsuya Yokoi, Yasuo Shimizu and Yutaka Ohno

    2nd International Symposium on Modeling of Crystal Growth Processes and Devices  2021.7.6 

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    Event date: 2021.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:on-line  

  187. Process optimization for the seeded directional solidification of Si ingot using CFD and machine learning International conference

    Xin Liu, Yifan Dang, Hiroyuki Tanaka, Kentaro Kutsukake, Toru Ujihara, and Noritaka Usami

    2nd International Symposium on Modeling of Crystal Growth Processes and Devices  2021.7.6 

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    Event date: 2021.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:on-line  

  188. Multicrystalline informatics: A methodology to realize high-performance crystals Invited International conference

    Noritaka Usami, Takuto Kojima, Kentaro Kutsukake, Xin Liu, Hiroaki Kudo, Tetsuya Matsumoto, Tatsuya Yokoi, Yasuo Shimizu and Yutaka Ohno

    2nd International Symposium on Modeling of Crystal Growth Processes and Devices  2021.7 

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    Event date: 2021.7

    Language:English   Presentation type:Oral presentation (invited, special)  

  189. 日本に育て次世代型太陽電池 Invited

    宇佐美 徳隆

    第155回結晶工学分科会研究会 カーボンニュートラルに結晶工学が果たす役割  2021.6.23  応用物理学会 結晶工学分科会

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  190. Realization of the Cystalline Silicon Solar Cell Using Nanocrystalline Transport Path in Ultra-thin Dielectrics for Reinforced Passivating Contact International conference

    R. Tsubata, K. Gotoh, T. Inoue, Y. Kurokawa, and N. Usami

    48th IEEE Photovoltaic Specialists (PVSC)   2021.6.21 

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    Event date: 2021.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:virtual meeting  

  191. Application of Machine Learning for High-Performance Multicrystalline Materials Invited International conference

    Noritaka USAMI

    239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS)  2021.5 

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    Event date: 2021.5 - 2021.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  192. Isotopically Engineered Silicon Testbeds for Advanced CMOS and Quantum Information Invited International conference

    Satoru Miyamoto, Noritaka Usami, Kohei M. Itoh

    239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS), Virtual meeting,   2021.5 

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    Event date: 2021.5 - 2021.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  193. Multicrystalline informatics for development of high-performance materials Invited International conference

    Noritaka Usami

    NU Tech Roundtable 2021  2021.5.13 

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    Event date: 2021.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:on-line  

  194. Application of Bayesian Optimization for Improved Passivation Performance in TiOx/SiOy/c-Si Heterostructure by Hydrogen Plasma Treatment International conference

    Shinsuke Miyagawa, Kazuhiro Gotoh, Kentaro Kutsukake, Yasuyoshi Kurokawa, Noritaka Usami

    The International Conference on Crystalline Silicon Photovoltaics  2021.4 

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:on-line  

  195. Improved Performance of Titanium Oxide Electron-Selective Contact by Implementation of Magnesium Interlayer International conference

    Yuta Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    The International Conference on Crystalline Silicon Photovoltaics  2021.4 

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    Event date: 2021.4

    Language:English   Presentation type:Poster presentation  

    Venue:on-line  

  196. 多結晶材料情報学の基盤技術 Invited

    宇佐美徳隆

    第36回シリサイド系半導体研究会  2021.3.19  応用物理学会シリサイド系半導体研究会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  197. 多結晶シリコンウェハの蛍光イメージ中の転位クラスター領域の画像変換による特定

    工藤博章, 松本哲也, 沓掛健太朗, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  198. As-doped n-BaSi2膜の水素パッシベーションによる分光感度向上と第一原理計算によるミクロ構造考察 International coauthorship

    青貫翔, 山下雄大, Xu Zhihao, 後藤和泰, 都甲薫, 宇佐美徳隆, Migas Dmitri, 末益崇

    第68回応用物理学会春季学術講演会  2021.3.16  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  199. シリコンナノ結晶/酸化シリコン複合膜に対する水素化処理の検討

    松見優志, 後藤和泰, ビルデマーカス, 黒川康良, 福谷克之, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  200. 多結晶シリコンの光反射特性による結晶方位推定モデル

    小島拓人, 原京花, 沓掛健太朗, 松本哲也, 工藤博章, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  201. ベイズ最適化を援用した高性能パッシベーティングコンタクトの実現 ~TiOx/結晶Siヘテロ構造への適用~

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  202. 三次元キャリアシミュレーションを用いた多結晶Si中三重点の電気的特性の評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  203. シリコンナノ結晶/酸化シリコンを複合化した導電性パッシベーション膜の太陽電池応用

    津幡亮平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  204. 同位体制御 28Si/SiGe量子計算基板における微小結晶傾斜角イメージング International coauthorship

    竹内公一, 宮本聡, 伊藤公平, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.17  応用物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  205. 高性能多結晶材料創製に向けた多結晶材料情報学の開拓

    宇佐美徳隆

    日本物理学会第76回年次大会  2021.3.13  日本物理学会

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  206. Prediction of Stress and Dislocations in Silicon Ingots using Artificial Neural Networks International conference

    A. Boucetta,Y. Fukuda, K. Kutsukake, T. Kojima, H. Kudo,T. Matsumoto, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

  207. Formation of SiGe alloyed films on Si substrate by screen-printing of Al-Ge pre-alloyed mixture pastes International conference

    M. Nakahara, M. Matsubara, S. Suzuki, M. Dhamrin, K. Fukuda, S. Miyamoto, K. Maeda, K. Fujiwara, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

  208. Signature of crystallographic tilting in isotopically enriched Si-28/SiGe International conference

    S. Miyamoto, K. Takeuchi, Kohei M. Itoh, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

  209. 蛍光イメージングと有限差分シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  210. ベイズ最適化を用いたTiOx/SiOy結晶Siへテロ構造における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

  211. 成長速度の二段階制御による真空蒸着BaSi2薄膜の高品質化

    吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  212. 蛍光イメージングと有限差分シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  213. シリコン結晶における粒界の成長方向に対する粒界構造と固液界面形状の影響

    福田祐介, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  214. 多層光学イメージを利用した多結晶Si中の結晶粒形状の取得

    山腰健太, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  215. 結晶成長の機械学習のためのデータ取得:何をどこで計測するか Invited

    沓掛健太朗, B. Abderahmane, 宇佐美徳隆, 前田健作

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  216. シリコン結晶における粒界の成長方向に対する粒界構造と固液界面形状の影響

    福田祐介, 沓掛健太郎, 小島拓人, 宇佐美徳隆

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  217. バルク多結晶成長のプロセスサイエンス Invited

    宇佐美徳隆, 沓掛健太朗, 小島拓人, 工藤博章, 横井達矢, 大野裕

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  218. Triple Junctions of Random Angle Grain Boundaries Acting as Dislocation Sources in HP Mc-Silicon Ingots International conference

    Y. Ohno, K. Tajima, K. Kutsukake, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  219. Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide-coated crystalline silicon heterocontacts International conference

    Y. Nakagawa, K. Gotoh, M. Wilde, S. Ogura, Y. Kurokawa, K. Fukutani, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  220. Fabrication of Si textures with low etching margin using Ag-assisted alkaline solution International conference

    Y. Li, V.H. Nguyen, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  221. Dependence of electrical properties of stacked Sn-doped In2O3 films on oxygen partial pressure International conference

    T. Inoue, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  222. Carbon dioxide/Silane gas flow rate dependency on electrical properties in silicon-nanocrystals-embedded silicon oxide passivating contacts International conference

    R. Tsubata, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  223. Impact of hydrogen plasma treatment on the passivation performance of TiOx prepared on crystalline silicon by atomic layer deposition International conference

    S. Miyagawa, K. Gotoh, S. Ogura, M. Wilde, Y. Kurokawa, K. Fukutani, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  224. Application of artificial neural network to predict distribution of dislocations in silicon ingots International conference

    A. Boucetta,Y. Fukuda, K. Kutsukake, T. Kojima, H. Kudo,T. Matsumoto, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  225. Materials and process informatics for research on photovoltaics Invited International conference

    Noritaka USAMI

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11.9 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  226. Improvement of BaSi2 thin film quality by two-step growth rate control of vacuum evaporation International conference

    T. Yoshino, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  227. Impact of excess PbI2 on controlling one-dimensional MAPbI3 perovskites for high carrier lifetimes International conference

    V. H. Nguyen, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  228. Impact of Ge deposition temperature on fabrication of surface texture using SiGe islands as a mask International coauthorship International conference

    V. H. Nguyen, A. Novikov, M. Shaleev, D. Yurasov, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  229. Impact of Misalignment of S3{111} Grain Boundaries on Photovoltaic Properties in Silicon International conference

    Y. Ohno, T. Tamaoka, H. Yoshida, Y. Shimizu, N. Ebisawa, Y. Nagai, K. Kutsukake, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  230. 日本太陽光発電学会の設立に寄せて Invited

    宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Oral presentation (keynote)  

  231. 積層Sn添加In2O3薄膜における電気的特性の酸素分圧依存性

    井上徹哉, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Poster presentation  

  232. シリコンナノ結晶/酸化シリコン復合膜における炭酸ガス/シランガス流量比依存性

    津幡亮平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Poster presentation  

  233. ベイズ最適化を用いたTiOx/SiOy結晶Siへテロ構造における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Poster presentation  

  234. Mg層を挿入したTiOx/SiOy/Si構造の接合特性のTiOx膜厚依存性

    中川裕太, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Poster presentation  

  235. 成長速度の二段階制御による真空蒸着BaSi2薄膜の高品質化

    吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Poster presentation  

  236. Atom probe tomography observation of diffusion behaviors in isotopically controlled silicon nanostructures International conference

    S. Miyamoto, R. Kiga, Y. Shimizu, Y. Nagai, N. Usami, and K. M. Itoh

    IMRT Joint International Symposium on Radiation Effects in Materials and Actinide Science (GIMRT-REMAS2020), Virtual meeting  2020.9 

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    Event date: 2020.9 - 2020.10

    Language:English   Presentation type:Oral presentation (general)  

  237. Fabrication of TiOx thin film on Si using solution-based process and its passivation performance International conference

    H. Luo, V. H. Nguyen, K. Gotoh, Y. Kurokawa, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  238. Passivation Mechanism of the High-performance Titanium Oxide Passivating Contacts on Crystalline Silicon Studied by Spectroscopic Ellipsometry International conference

    K. Gotoh, H. Miura, A. Shimizu, T. Kurokawa, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  239. Direct imaging of crystallographic tilting for valley-controlled Si/SiGe qubits International conference

    K. Takeuchi, S. Miyamoto, K. M. Itoh, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  240. Size effect of silicon nanocrystals on Seebeck coefficient of phosphorus-doped Si nanocrystals/silicon oxide multilayers International conference

    H. Kobayashi, S. Kato, M. Kurosawa, K. Gotoh, N. Usami, and Y. Kurokawa

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  241. ベイズ最適化を用いた酸化チタンパッシベーション膜における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  242. 多層光学イメージを利用した多結晶Si中の結晶粒の3次元モデル化

    山腰健太, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  243. 多結晶材料情報学による粒界構造の解明と制御に向けて Invited

    宇佐美徳隆, 沓掛健太朗, 小島拓人, 工藤博章, 横井達矢, 大野裕

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  244. 多結晶シリコン組織の結晶方位の統計解析

    小島拓人, 松本哲也, 工藤博章, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  245. Mg層挿入によるTiOx/Siヘテロ接合の接合特性の向上

    中川裕太, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  246. 有限差分シミュレーションを用いた粒界傾斜のキャリア分布への影響評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  247. 印刷と焼成で形成したSiGe混晶薄膜の顕微ラマン分析

    福田啓介, 宮本聡, 中原正博, 沓掛健太郎, ダムリンマルワン, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  248. シリコンナノ結晶/酸化シリコンを複合化した導電性パッシベーション膜の検討

    津幡亮, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  249. Solid-state heteroepitaxy of Si(111) by Aluminum- induced Crystallization

    M. Hainey, T. Yamamoto, E. Zhou, L. Viguerie, and N. Usami

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  250. ハイパフォーマンス多結晶シリコンにおける粒界3重点と転位発生の相関

    大野裕, 田島和哉, 沓掛健太朗, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  251. 溶液プロセスによる酸化チタン薄膜の作製とパッシベーション性能の評価

    羅昊, Van Hoang Nguyen, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  252. Formation of p-Type BaSi2 Thin Film and its Application to Silicon-Based Heterojunction Solar Cells International conference

    Y. Kimura, M. Fujiwara, K. Takahashi, Y. Nakagawa, T. Yoshino, K. Gotoh, Y. Kurokawa, and N. Usami

    37th European PV Solar Eneregy Conference and Exhibition 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  253. What Is the Dislocation Sources in the Growth of High-Performance Multicrystalline Si Ingots? International conference

    Y. Ohno, K. Tajima, N. Usami, and K. Kutsukake

    37th European PV Solar Energy Conference and Exhibition, Virtual meeting  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  254. Effect of Hydrogen Plasma Treatment on Silicon Quantum Dot Multilayers Using Amorphous SiOx International conference

    R. Akaishi, K. Gotoh, N. Usami, and Y. Kurokawa

    37th European PV Solar Energy Conference and Exhibition, Virtual meeting  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  255. Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts International conference

    R. Tsubata, K. Gotoh, Y. Kurokawa, and N. Usami

    47th IEEE Photovoltaic Specialists Conference (PVSC 47) 

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    Event date: 2020.6 - 2020.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  256. Work function of indium oxide thin films on p-type hydrogenated amorphous silicon International conference

    M. Semma, K. Gotoh, Y. Kurokawa, and N. Usami

    47th IEEE Photovoltaic Specialists Conference (PVSC 47) 

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    Event date: 2020.6 - 2020.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  257. Passivation Mechanism of the High Performance Titanium Oxide Passivating Contacts on Crystalline Silicon Studied by Spectroscopic Ellipsometry International conference

    K. Gotoh, H. Miura, A. Shimizu, S. Miyagawa, Y. Nakagawa, Y. Kurokawa, and N. Usami

    10th International Conference on Crystalline Silicon Photovoltaics 2020 

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    Event date: 2020.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hangzhou, China   Country:China  

  258. High-performance TiOx/crystalline Si heterocontacts for solar cells Invited International conference

    Noritaka Usami

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gwangju, Korea   Country:Korea, Republic of  

  259. 畳み込みニューラルネットワークの転移学習に基づいた多結晶シリコ ンインゴット中の転位クラスター発⽣点の特徴

    工藤博章, 松本哲也, 沓掛健太朗, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  260. 多結晶シリコンインゴット中の転位発⽣点近傍の構造特性

    小野裕, 田島和哉, 沓掛健太朗, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  261. MoOx CSC/Si太陽電池のPDAによる特性変動 (3)-表面反転層をチャネルとするFET-TEGのS/Dコンダクタンスによる評価

    林豊, 神岡武文, 後藤和泰, 尾崎亮, 中村京太郎, 森村元勇, 宇佐美徳隆, 大下祥雄, 小椋厚志

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  262. 不活性ガス雰囲気下での熱処理を⽤いたクラックフリーMg2Si厚膜 の合成

    堀場一成, 後藤和泰, 黒川康良, 伊藤孝至, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  263. 機械学習を用いた発光強度プロファイルからの欠陥の電気的特性の推定とイメージマッピング

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  264. ポストアニール処理を用いたアンドープp-BaSi2/n-Siヘテロ接合太陽電池の作製

    木村裕希, 吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  265. Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

    Z. Xu, K. Gotoh, K. Toko, N. Usami, and T. Suemasu

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  266. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の効果

    宮川晋輔, 後藤和泰, M. Wilde, 小倉正平, 黒川康良, 福谷克之, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  267. 印刷と焼成によるシリコン系混晶半導体のエピタキシャル成長とその場観察

    福田啓介, 中原正博, 深見昌吾, 宮本聡, Dhamrin Marwan, 前田健作, 藤原航三, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  268. 機械学習を応用した画像処理による 多結晶シリコンウエハの結晶粒界検出

    山腰健太, 田島和哉, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  269. 核反応解析法と原⼦間⼒顕微鏡を⽤いたTiOx/SiOx/Siヘテロ 構造におけるパッシベーション性能の支配要因

    中川裕太, 後藤和泰, ビルデ マーカス, 小倉正平, 黒川 康良, 福谷克之, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  270. Fabrication of Si Textures with Low Etching Margin Using AgNO3-assisted Alkaline Solution

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  271. 多結晶材料情報学の現在地 Invited

    宇佐美徳隆

    アモルファス・ナノ材料と応用 第147委員会、第147回研究会 「マテリアルズインフォマティクスの活用とその課題」 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  272. Activation energy of hydrogen effusion of high performance TiOx/SiOx/c-Si heterocontacts International conference

    Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

    MRS-J The 30th Anniversary Material Research Meeting 2019 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  273. Activation energy of hydrogen effusion of high performance TiOx/SiOx/c-Si heterocontacts International conference

    Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

    MRS-J The 30th Anniversary Material Research Meeting 2019 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  274. Neural Network to Determine Appropriate Thermocouple Positions in Crystal Growth Furnace International conference

    Abderahmane Boucetta, Kentaro Kutsukake, Hiroaki Kudo, Tetsuya Matsumoto, Takuto Kojima, Noritaka Usami

    2019 MRS Fall Meeting & Exhibit 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  275. Role of the Interlayer in Improving Passivating Contact with Atomic Layer Deposited TiOx on Crystalline Si International conference

    Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takahisa Yamamoto, Tomohiko Hojo, Eiji Akiyama, Noritaka Usami

    2019 MRS Fall Meeting & Exhibit 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  276. Impact of Growth Temperature of Ge Islands on Anti-Reflection Texture Formation International conference

    Van Hoang Nguyen, Yuki Kimura, Alexey Novikov, Mikhail V Shaleev, Satoru Miyamoto, Yasuyoshi Kurokawa, Noritaka Usami

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  277. Practical Growth Processes of Silicide and Germanite Thin Films for Photovoltaic and Electronic Applications International conference

    Kosuke O. Hara (invited), Shuhei Takizawa, Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  278. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の影響

    宮川晋輔, 後藤和泰, Markus Wilde,小倉正平, 黒川康良, 福谷克之, 宇佐美徳隆

    第2回ハイドロジェノミクス研究会 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  279. 分光エリプソメトリーを用いた酸化チタン パッシベーション膜のポストアニール効果に関する研究

    後藤和泰、 三浦裕之、 清水彩子、 宮川晋輔、 中川裕太、 黒川康良、 宇佐美徳隆

    第4回フロンティア太陽電池セミナー 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  280. ポストアニール条件がアンドープBaSi2薄膜のキャリア密度に与える影響

    藤原道信, 中川慶彦, 後藤和泰, 黒川康良, 宇佐美徳隆

    第2回結晶工学×ISYSE合同研究会 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  281. 不活性ガス雰囲気下での熱処理を用いたMg2Si薄膜の作製とその膜質評価

    堀場一成、 藤原道信、 中川慶彦、 後藤和泰、 黒川康良、 伊藤孝至、 宇佐美徳隆

    第2回結晶工学×ISYSE合同研究会 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  282. データ科学を活用した多結晶シリコンの研究の進展 Invited

    宇佐美 徳隆

    日本学術振興会 結晶成長の科学と技術第161委員会第112回研究会 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  283. Quantitative evaluation of electrical characteristics of inclined grain boundaries in multicrystalline silicon by photoluminescence imaging and finite element simulation International conference

    Kazuki Mitamura, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  284. Characterization of Silicon Quantum Dot Solar Cell with the Phosphorus Blocking Layer International conference

    Ryushiro Akaishi, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  285. Impact of indium tin oxide double layers deposition on the passivation performance of a-Si:H/c-Si heterocontact International conference

    Masanori Semma, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  286. New Analysis Method to Evaluate Amorphous/Crystalline Si Interface for High Efficiency Heterojunction Solar Cells International conference

    Takefumi Kamioka, Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Ayako Shimizu, Kyotaro Nakamura, Noritaka Usami, Yoshio Ohshita, Atsushi Ogura

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  287. Close-spaced evaporation:Scalable technique for BaSi2 film deposition International conference

    Kosuke O. Hara, Shuhei Takizawa, Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  288. An universal approach to produce the passivation materials of c-Si substrate by alcoholic solute PEDOT:PSS International conference

    V.H. Nguyen, Y. Kurokawa, N. Usami

    National University of Singapore and Nagoya University Joint Seminar 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  289. Fabrication of Tapered Si Nanowires for PEDOT: PSS Hybrid c-Si Solar Cells International conference

    Yuqing Li, Van Hoang Nguyen and Noritaka Usami

    National University of Singapore and Nagoya University Joint Seminar 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  290. 光学イメージによる多結晶Siウエハの結晶方位解析に向けた研究

    上別府颯一郎、松本哲也、加藤光、沓掛健太朗、工藤博章、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  291. 発光イメージング法と有限要素シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹、沓掛健太朗、小島拓人、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  292. 多結晶材料情報学による高性能シリコンイン ゴットの創製に向けて(注目講演) Invited

    宇佐美徳隆、沓掛健太朗、Boucetta Abderahmane、小島拓人、松本哲也、工藤博章、野田祐輔、横井達矢、清水康雄、大野裕

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  293. aSi:H/cSiヘテロ接合Si太陽電池の表面欠陥・トラップ準 位評価手段 -表面反転層ラテラル少数キャリア等価移動度

    神岡武文、林豊、後藤和泰、尾崎亮、森村元勇、内藤志麻子、宇佐美徳隆、大下祥雄、小椋厚志

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  294. サブピクセルシフトによるPLイメージングの空間分解能 の向上

    竹内公一、 沓掛健太朗、 小島拓人、 工藤博章、 松本哲也、 宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  295. 機械学習による発光強度プロファイルからの欠陥の電気特性の推定

    沓掛健太朗、三田村和樹、小島拓人、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  296. 四元数計算を用いた多結晶シリコンにおけるランダム粒界と Σ3n粒界の識別手法

    小島拓人、 田島和哉、 松本哲也、 工藤博章、 宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  297. 機械学習を用いた多結晶シリコン基板の結晶粒検出と結晶方位推定

    加藤光、上別府颯一郎、小島拓人、沓掛健太朗、松本哲也、工藤博章、竹内義則、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  298. Evidence of Solute PEDOT:PSS as an Efficient Passivation Material International conference

    V.H. Nguyen, K. Gotoh, Y. Kurokawa, N. Usami, S. Kato

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  299. On the Progress in Data Science Approaches for High-Quality Multicrystalline Silicon Ingot for Solar Cells International conference

    Noritaka Usami, Kazuya Tajima, Soichiro Kamibeppu, Abderahmane Boucetta, Kentaro Kutsukake, Takuto Kojima, Tetsuya Matsumoto, Hiroaki Kudo, Yusuke Noda, Tatsuya Yokoi, Yasuo Shimizu, Yutaka Ohno

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  300. Generation and Propagation of Dislocation Clusters Originated from Multicrystallization by S.3n Rotation and in Quasi-Monocrystalline Silicon International conference

    T. Kojima, K. Tajima, T. Matsumoto, H. Kudo, N. Usami, P. Krenckel, S. Riepe

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  301. Enhanced Material Quality in SMART mono-Si Block Cast Ingots by Introduction of Functional Defects International conference

    S. Riepe, P. Krenckel, A. Hess, T. Trötschler, Y. Hayama, K. Kutsukake, F. Schindler, N. Usami

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  302. Preparation and thermoelectric characterization of phosphorous-doped silicon nanocrystals/silicon oxide multilayers International conference

    Hisayoshi Kobayashi, Ryushiro Akaishi, Shinya Kato, Masashi Kurosawa, Noritaka Usami, Yasuyoshi Kurokawa

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  303. Fabrication of Group Ⅳ Semiconductor Alloys on Si substrate by Screen-Printing International conference

    M. Nakahara, M. Matsubara, S. Suzuki, M. Dhamrin, S. Miyamoto, M.F. Hainey Jr., N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  304. Fabrication of Group Ⅳ Semiconductor Alloys on Si substrate by Screen-Printing International conference

    M. Nakahara, M. Matsubara,S. Suzuki, M. Dhamrin, S. Miyamoto, M.F. Hainey Jr., N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  305. Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell International conference

    Y. Hayashi, T. Kamioka, K. Gotoh, R. Ozaki, K. Nakamura, M. Morimura, S. Naitou, N. Usami, A. Ogura, Y. Ohshita

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  306. Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate International conference

    V.H. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  307. Highly oriented Si(111) films on lattice-mismatched single-crystalline substrates via aluminum-induced crystallization International conference

    M.F. Hainey Jr., C. Zhou, N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  308. Optical Investigation of Interstitial H2 Nuclear-Spin States in Isotopically Enriched Silicon

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  309. TiOx/SiOx/結晶Siヘテロ界面における水素の脱離エネルギー

    後藤 和泰、望月 健矢、北條 智彦、黒川 康良、秋山 英二、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  310. 水素プラズマ処理によるシリコン量子ドット積層構造の欠陥密度低減と構造特性評価

    赤石 龍士郎、後藤 和泰、黒川 康良, 宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  311. 原子層堆積法による結晶Si/SiOx/TiOx構造の作製と熱処理の効果

    中川 裕太、後藤 和泰、宮本 聡、黒川 康良、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  312. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の検討

    宮川 晋輔、後藤 和泰、黒川 康良、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  313. 太陽電池高性能化への材料科学的アプローチ:結晶シリコン太陽電池を中心に Invited

    宇佐美 徳隆

    物質科学研究会 第1回iMATERIA研究会 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  314. 発光イメージング法と有限要素シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村 和樹、小島 拓人、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  315. キャリア輸送径路にナノドットを用いたパッシベーション膜の作製と評価

    津幡 亮平、後藤 和泰、黒川 康良、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  316. TiOx/結晶Siの電気的特性における光照射効果

    宮川 晋輔、後藤 和泰、黒川 康良、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  317. Influence of Post Annealing Conditions on Carrier Density of Undoped Evaporated BaSi2 Films International conference

    Yuki Kimura, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  318. Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation International conference

    Takamasa Yoshino, Yuki Kimura, Michinobu Fujiwara, Yoshihiko Nakagawa, Yasuyoshi Kurokawa, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  319. Influence of Ba to Si rate ratio on the properties of B-doped BaSi2 epitaxial films International conference

    S. Sugiyama, Y. Kimura, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  320. Significant improvement on photoresponsivity and minority carrier lifetime of atomic H passivated BaSi2 epitaxial films International conference

    Z. Xu, K. Gotoh, T. Deng, K. Toko, N. Usami, D. Migas, T. Suemasu

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  321. Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality International conference

    Issei Horiba, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takashi Itoh, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  322. a-Si:H/c-Siヘテロ構造のパッシベーション性能と水素分布における製膜温度の影響

    後藤 和泰,ビルデ マーカス, 加藤 慎也, 小倉 正平, 黒川 康良, 福谷 克之, 宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  323. 書誌情報データベースを利用した175委員会の研究力分析

    宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  324. ITO積層化のa-Si:H/c-Si界面パッシベーション性能に及ぼす影響

    扇間 政典, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  325. ハイパフォーマンス多結晶シリコンにおける転位クラスター発生機構

    田島和哉, 沓掛健太朗, 大野裕, 松本哲也, 工藤博章, 宇佐美徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  326. Electrical properties of TiOx bilayer prepared by atomic layer deposition at different temperatures International conference

    Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    The 64th IEEE Photovoltaics Specialist Conference 

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    Event date: 2019.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  327. Significant improvement of optical properties of BaSi2 due to atomic H passivation by radio-frequency plasma International conference

    Zhihao Xu, Kazuhiro Gotoh, Tianguo Deng, Kaoru Toko, Noritaka Usami, Takashi Suemasu

    The 64th IEEE Photovoltaics Specialist Conference 

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    Event date: 2019.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  328. Fabrication of Si1-xSnx layer on Si substrate by Screen-Printing of Al-Sn paste International conference

    Masahiro Nakahara, Moeko Matsubara, Kosuke Tsuji, Shota Suzuki, Marwan Dhamrin, Noritaka Usami

    2nd Joint ISTDM / ICSI 2019 Conference 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  329. Silicon Seed Layers Fabricated by Aluminum-induced Crystallization: Guidelines for Heteroepitaxy International conference

    Mel Hainey, Jr, Yoann Robin, Geoffrey Avit, Loic Viguerie, Hiroshi Amano, Noritaka Usami

    2nd Joint ISTDM / ICSI 2019 Conference 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  330. Pathways to high-performance silicon-based solar cells: Overview of photovoltaic research at Nagoya University International conference

    Noritaka Usami

    Instituts-Kolloquium, Institut fuer Solarenergieforschung in Hameln (ISFH) 

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    Event date: 2019.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  331. Impact of pre-oxidation on hydrogen depth profiles around a-Si:H/c-Si heterointerface International conference

    Kazuhiro Gotoh, Shohei Ogura, Yasuyoshi Kurokawa, Markus Wilde, Katsuyuki Fukutani, Noritaka Usami

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    Event date: 2019.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  332. Surface passivation of low temperature processed titanium oxide/alluminium oxide for silicon substrate International conference

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  333. Pathways to high-performance silicon-based heterojunction solar cells Invited International conference

    Noritaka Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Russian Federation  

  334. Using Ge (Si) islands to increase the efficiency of thin crystalline solar cells Invited International conference

    Mv Shaleev, A.V. Novikov, D.V. Yurasov, N.A. Baidakova, E.E. Morozova, Y. Ota, V.H. Nguyen, K. Gotoh, Y. Kurokawa, N. Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Russian Federation  

  335. Impact of textured structure on performance of PEDOT:PSS hybrid Si solar cells Invited International conference

    V.H. Nguyen , Y. Ota, A. Novikov, M. Shaleev, K. Gotoh, Y. Kurokawa, N. Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Russian Federation  

  336. ALD 法で作製したTiOx 電子選択層の積層化による電気的特性の制御

    望月 健矢, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  337. Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

    Mel Hainey, Eddie (Chenhui) Zhou, Noritaka Usami

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  338. Combination of Simulations and Data Science to Determine Appropriate Thermocouple Positions in a Crystal Growth Furnace

    Abderahmane BOUCETTA, Kentaro KUTSUKAKE, Hiroaki KUDO, Tetsuya MATSUMOTO, Noritaka USAMI

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  339. 放射光X線回折パターンの特徴抽出と空間マッピング

    沓掛 健太朗, 神岡 武文, 井上 憲⼀, 深見 昌吾, 宇佐美 徳 隆, 中原 正博, ダムリン マルワン, 佐々木 拓生, 藤川 誠司, 高橋 正光

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  340. SiOxを障壁層としたSi量子ドット太陽電池の作製

    赤石 龍士郎, 北沢 宏平, 加藤 慎也, 後藤 和泰, 宇佐美 徳 隆, 黒川 康良

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  341. 擬単結晶シリコンにおけるΣ3結晶粒の発達と転位クラスターの生成の関係

    小島 拓人, 田島 和哉, 松本 哲也, 工藤 博章, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  342. 3 次元PLイメージング法で同定したハイパフォーマンス多結晶シリコンイ ンゴット中の転位発⽣点近傍の透過電⼦顕微鏡解析

    大野 裕, 田島 和哉, 沓掛 健太朗, 清水 康雄, 海老澤 直樹, 永井 康介, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  343. ハイパフォーマンス多結晶Siインゴットにおける析出物分布の3次元可視化

    上別府 颯⼀郎, Krenckel Patricia, Troetschler Theresa, Hess Adam, Riepe Stephan, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  344. Ba/Si堆積レート比がB-doped BaSi2膜の少数キャリア寿命に与える影響

    杉山 周, 木村 裕希, 山下 雄大, 都甲 薫, 宇佐美 徳隆, 末益 崇

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  345. 薄型基板上へのGeドットマスクを用いた光閉じ込め構造の作製と太陽電池への応用

    太田 湧士,後藤 和泰,黒川 康良,宇佐美 徳隆, Dmitrij Yurasov, Alexey Novikov, Mikhail Shaleev

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  346. 多結晶シリコンインゴット内における転位クラスターのサイズと伝搬方向の関係

    田島和哉, 松本哲也, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  347. ポストアニール条件がBaSi2薄膜のキャリア密度に与える影響

    木村 裕希, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  348. 印刷と焼成によるSi基板上へのSiGe層のエピタキシャル成長におけるSi基板方位の影響 International conference

    中原 正博、深見 昌吾、Mel F. Hainey, Jr.、中川 慶彦、有元 圭介、後藤 和泰、 黒川 康良、前田 健作、藤原 航三、ダムリン マルワン、宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  349. ALD法で作製した法で作製したTiOx/SiOx/結晶Siヘテロ界面のパッシベーョン効果発現メカニズム〜水素原子脱離の影響〜

    望月 健矢, 後藤 和泰, 北條 智彦, 黒川 康良, 秋山 英二, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  350. Multicrystalline informatics for silicon ingot with ideal microstructures Invited International conference

    Noritaka Usami

    European Materials Modeling Council International Workshop 2019 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Austria  

  351. Silicon Quantum Dot Superlattice Structure for Next Generation Solar Cell Application International conference

    Ryushiro Akaishi, Kohei Kitazawa, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  352. Establishment of Quantitative Evaluation Method of Electrical Characteristics of Defects in Silicon Crystals for Solar Cells by Photoluminescence Imaging Method using Finite Element Method International conference

    Kazuki Mitamura, Kentaro Kutsukake, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  353. Preparation of Silicon Nanocrystals Embedded in SiOx for Application to Next Generation Thermoelectric Devices International conference

    Hisayoshi Kobayashi, Ryushiro Akaishi, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  354. Application of p-type Transparent Conductive Thin Film Copper Iodine to Silicon Heterojunction Solar Cells International conference

    Min Cui, Kazuhiro Gotoh, Yasuyoshi Kurokawa and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  355. High Spatial Resolution of Multicrystalline Imaging by Subpixel Shift International conference

    Koichi Takeuchi, Kazuya Tajima, Yusuke Hayama, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  356. Influence of Light Soaking on c-Si Surface Passivation by Atomic Layer Deposited Titanium Oxide International conference

    Shinsuke Miyagawa, Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  357. Explorative Studies of Novel Structures as Carrier Selective Contacts International conference

    Ryohei Tsubata, Yuta Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  358. Passivation Performance of Crystalline Silicon Solar Cells Employing Stacks of Ultrathin Oxide and Polycrystalline Si Formed by Aluminum Induced Crystallization International conference

    Yuqing Li, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  359. BaSi2: Novel Si-Based Material for High Efficiency Thin Film Solar Cells International conference

    Yuki Kimura, Takamasa Yoshino, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  360. Effective Near-Infrared Light-Trapping Silicon Nanowire Structure for Crystalline Silicon Thin Film Solar Cells International conference

    Yasuyoshi Kurokawa, Shinya Kato, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  361. Formation of Light-trapping Structure using Ge Islands Grown by Gas-source Molecular Beam Epitaxy as Etching Masks on a Si Thin Substrate International conference

    Yushi Ota, Dmitry Yurasov, Alexey Novikov, Mikhail Shaleev, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  362. Thin PEDOT:PSS: An Excellent Passivation Material International conference

    Van Hoang Nguyen, Shinya Kato, Kazuhiro Gotoh, Yasuyoshi Kurokawa, and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  363. Aluminum Induced Crystallization for Heterointegration of Electronic Materials International conference

    Mel Hainey, Jr., Yoann Robin, Eddie Zhou, Hiroshi Amano, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  364. シリコン酸化膜を用いたシリコン量子ドット積層構造における構造・電気的特性評価

    赤石 龍士郎, 北沢 宏平, 後藤 和泰, 加藤 慎也, 宇佐美 徳隆, 黒川 康良

    第3回フロンティア太陽電池セミナー 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:宮崎市   Country:Japan  

  365. 超薄膜TiOx/結晶Si界面における酸素・水素原子の挙動

    望月健矢,後藤和泰,黒川康良,山本剛久,宇佐美徳隆

    第12回 物性科学領域横断研究会 

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    Event date: 2018.11 - 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  366. Effect of slow-speed evaporation of BaSi2 on the performance of p-type BaSi2/n-type crystalline Si solar cells International conference

    Michinobu Fujiwara, Kazuma Takahashi, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  367. Multicrystalline Informatics for Silicon Ingot with Ideal Microstructures Invited International conference

    Noritaka Usami, Kazuya Tajima, Soichiro Kamibeppu, Yusuke Hayama, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  368. Effects of Tunnel Layers and Light Illumination on the Performance of Electron-Selective TiO2 Contacts International conference

    Hyunju Lee, Changhyun Lee, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim, Noritaka Usami, Yoshio Ohshita

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  369. Recombination Activity of Inclined Σ3{111} Grain Boundaries in High-Performance Si Ingots International conference

    Yutaka Ohno, Kentaro Kutsukake, Takehiro Tamaoka, Seiji Takeda, Yasuo Shimizu, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  370. Effects of Surface Doping of Si Absorbers on the Performance of Carrier-Selective Contacts International conference

    Yoshio Ohshita, Hyunju Lee, Takefumi Kamioka, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  371. Fabrication of SiGe Layer on Si Substrate by Screen-Printing International conference

    Masahiro Nakahara, Moeko Matsubara, Shota Suzuki, Shogo Fukami, Marwan Dhamrin, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  372. Annealing Effects on the Layer Structure in BaSi2 Thin Films Studied by DB-PAS International conference

    Ana Montes,Yilei Tian, Daan Schopmeijer, Stephan Eijt, Hendrik Schut, Takashi Suemasu, Noritaka Usami, Joao Serra, Olindo Isabella, Miro Zeman

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  373. Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization International conference

    Mel Hainey,Yoann Robin,Hiroshi Amano,Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  374. Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste International conference

    Shogo Fukami, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Masahiro Nakahara, Marwan Dhamrin, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  375. Degradation of passivation performance of crystalline silicon solar cells employing stacksof ultrathin oxide and polycrystalline Si formed by aluminum induced crystallization

    Yuqing Li, Kazuhiro Gotoh, Takeya Mochizuki, Yasuyoshi Kurokawa, Noritaka Usami

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  376. ポストアニール温度によるBaSi2薄膜のキャリア密度への影響

    木村 裕希, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第6回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  377. 3D visualization and numerical information extraction of crystal defects in multicrystalline silicon ingot by processing PL images International conference

    Kazuya Tajima, Tetsuya Matsumoto, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    The Forum on the Science and Technology of Silicon Materials 2018 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  378. Local analysis of TiOx/SiOx stack with excellent electrical properties for carrier selective contact International conference

    Takeya Mochizuki,Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takahisa Yamamoto, Noritaka Usami

    The Forum on the Science and Technology of Silicon Materials 2018 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  379. Development of detection method of dislocation clusters from photoluminescence images by data science approach International conference

    Kazuya Tajima, Tetsuya Matsumoto, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  380. Diffusion suppression of phosphorus into a Si quantum dots absorption layer using Nb-doped TiO2 International conference

    Kouhei Kitazawa, Ryushiro Akaishi, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  381. Influence of illumination during ITO sputtering on passivation performance at a-Si:H/c-Si interface International conference

    Masanori Semma, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  382. Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization International conference

    Mel Hainey,Yoann Robin,Hiroshi Amano,Noritaka Usami

    International Workshop on Nitride Semiconductors 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  383. Transparent conductive Nb doped titanium oxide thin film deposited under low temperature by RF magnetron sputtering International conference

    Xuemei Cheng, Kazuhiro Gotoh, Hyunju Lee, Noritaka Usami

    14th China SoG Silicon and PV Power Conference 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  384. Enhancing conductivity of PEDOT:PSS thin film for fabrication of c-Si solar cell International conference

    Hoang Van Nguyen, Shinya Kato, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Emerging Material Technologies Summit 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Viet Nam  

  385. データ科学手法による結晶成長炉内の最適温度測定位置の検討

    沓掛健太朗, Boucetta Abderahmane, 工藤博章, 松本哲也, 宇佐美徳隆

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese  

    Venue:宮城県,仙台市   Country:Japan  

  386. Multicrystalline silicon informatics: A novel methodology to realize high-quality multicrystalline materials Invited International conference

    Noritaka Usami

    The 6th Japan-China Symposium on Crystal Growth and Crystal Technology 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  387. 多層パーセプトロンによる多結晶シリコンPL 像中の転位領域の推定における次元数に関する検討

    工藤博章,松本哲也,沓掛健太朗,宇佐美徳隆

    電子情報通信学会 イメージ・メディア・クオリティ研究会 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  388. Stacks of a-SiOx:H/a-Si:H Passivation Layer for Low Parasitic Absorption and High Passivation in Silicon Heterojunction Solar Cells International conference

    K. Gotoh, M, Cui, R. Akaishi, Y. Kurokawa, and N. Usami

    EU PVSEC 2018 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Venue:Brussel   Country:Belgium  

  389. Multicrystalline Informatics to Realize Ideal Crystalline Silicon for Solar Cells International conference

    N. Usami, Y. Hayama, T. Muramatsu, K. Tajima, S. Kamibeppu, K. Kutsukake, T. Matsumoto, and H. Kudo

    EU PVSEC 2018 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Brussel   Country:Belgium  

  390. 電子エネルギー損失分光法を用いた高パッシベーション性能TiOx/Sixヘテロ界面の局所構造の解明

    望月健矢,後藤和泰,黒川康良,山本剛久,宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  391. Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization International conference

    Mel Hainey, Yoann Robin, Hiroshi Amano, Noritaka Usami

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  392. Effect of Heaters Fluctuations on the Temperature for High Quality Si Ingots International conference

    Abderahmane BOUCETTA, Kentaro Kutsukake, Noritaka Usami

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  393. データ科学的手法を用いた 多結晶Siと反射特性の相関の解明

    上別府颯一郎, 松本哲也, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  394. 画像処理を用いた多結晶シリコンのマクロPL画像における転位クラスター検出とキャリア再結合の関係

    田島和哉、沓掛健太朗、松本哲也、工藤博章、宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  395. 印刷と焼成によるSi基板上へのSiGe層のエピタキシャル成長における熱処理条件の効果

    深見 昌吾、中川 慶彦、後藤 和泰、黒川 康良、中原 正博、ダムリン マルワン、宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  396. ITO製膜時の光照射がa-Si:H/c-Si界面におけるパッシベーション性能に及ぼす影響

    扇間政典, 後藤和泰, 黒川康良, 山本剛久, 宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  397. Geドットマスクを用いた光閉じ込め構造の作製とa-Si:Hパッシベーション:Ge成長温度の効果

    太田 湧士,後藤 和泰,黒川 康良,宇佐美 徳隆, Dmitrij Yurasov, Alexey Novikov, Mikhail Shaleev

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  398. p型BaSi2/n型結晶Siヘテロ接合形成におけるBaSi2低速蒸着の効果

    藤原 道信,高橋 一真,中川 慶彦,後藤 和泰,黒川 康良,伊藤 孝至,宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  399. Low temperature processed high conductive Nb doped titanium oxide thin film deposited by RF magnetron sputtering

    Xuemei Cheng, Kazuhiro Gotoh and Noritaka Usami

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  400. 不活性ガス雰囲気下での熱処理を用いたMg2Si薄膜の合成と膜質評価

    堀場 一成, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 伊藤 孝至, 宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  401. 真空蒸着法による透明導電膜上へのBaSi2 薄膜作製と評価

    中川 慶彦, 望月 健矢,後藤 和泰, 黒川 康良, 宇佐美 徳隆

    中川 慶彦, 望月 健矢,後藤 和泰, 黒川 康良, 宇佐美 徳隆 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋   Country:Japan  

  402. Conductivity enhancement of PEDOT:PSS thin film for ITO-free hybrid c-Si solar cell

    Hoang Van Nguyen, Shinya Kato, Kazuhiro Goto, Yasuyoshi Kurokawa, Noritaka Usami

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  403. 多結晶シリコンPL像中の転位領域の多層パーセプトロンによる推定

    工藤博章,松本哲也,沓掛健太朗,宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  404. Σ3{111}対称傾角粒界の不純物偏析能とキャリア再結合速度に対する傾角のずれの影響

    大野 裕、沓掛 健太朗、玉岡 武泰、竹田 精治, 清水 康雄, 海老澤 直樹, 井上 耕治, 永井 康介, 宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  405. The influence of Ge substrate modification on photoresponse properties of evaporated BaSi2 films for thin-film solar cells application

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  406. データ科学を活用した高品質多結晶材料創製に向けて Invited

    宇佐美 徳隆,沓掛 健太朗,松本 哲也,工藤 博章,横井 達 矢,清水 康雄,大野 裕

    日本セラミックス協会 第 31 回秋季シンポジウム 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  407. Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials International conference

    R. Nezasa, Y. Kurokawa, N. Usami

    IEEE NANO 2018 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  408. FORMATION OF BLACK-Si FOR SOLAR CELLS BY SELECTIVE ETCHING STRUCTURES WITH GeSi ISLANDS

    M.V. Shaleev, A.V. Novikov, N.A. Baydakova, D.V. Yurasov, E.E. Morozova, V.A. Verbus, E.V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, N. Usami

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  409. 薄型 Rib-Si 太陽電池の特性分布測定

    岩田 龍門,石河 泰明,黒川 康良,小長井 誠

    第15回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  410. データ科学的手法を用いた多結晶Siの結晶方位解析に関する研究

    上別府颯一郎、松本哲也、沓掛健太朗、工藤博章、宇佐美徳隆

    第15回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2018.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue: 札幌   Country:Japan  

  411. 薄型結晶Si太陽電池応用に向けたサブミクロンSiナノワイヤ構造の作製と評価

    根笹良太, 清美樹, 黒川康良, 宇佐美徳隆

    第15回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2018.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  412. SiOxを障壁層としたSi量子ドット太陽電池構造作製のためのTiO2:NbによるP拡散抑制

    北沢宏平, 赤石龍士郎, 小野聖, 加藤慎也, 後藤和泰, 宇佐美徳隆, 黒川康良

    第15回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2018.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:札幌   Country:Japan  

  413. EFFECT OF NOVEL SUB-MICRON STRUCTURE FABRICATED ONTO CRYSTALLINE SILICON ON OPTICAL PROPERITES AND MINORITY CARRIER LIFETIME International conference

    Miki Sei, Yasuyoshi Kurokawa, Shinya Kato, Kazuhiro Gotoh, Noritaka Usami

    Grand Renewable Energy 2018 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  414. Controllable optical and electrical properties of Nb doped TiO2 films by RF sputtering International conference

    Xuemei Cheng, K. Gotoh, T. Mochizuki and N. Usami

    World Conference on Photovoltaic Energy Conversion (WCPEC-7) 

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    Event date: 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Hawaii   Country:United States  

  415. Application of light-trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell International conference

    Atsushi Hombe, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Noritaka Usami

    World Conference on Photovoltaic Energy Conversion (WCPEC-7) 

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    Event date: 2018.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  416. Development of the Passivation Layer for p-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells International conference

    M. Cui, K. Gotoh, Y. Kurokawa and N. Usami

    World Conference on Photovoltaic Energy Conversion (WCPEC-7) 

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    Event date: 2018.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  417. Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases International conference

    R. Akaishi, K Kitazawa, . Ono, K. Gotoh, E. Ichihara, S. Kato, N. Usami and Y. Kurokawa

    World Conference on Photovoltaic Energy Conversion (WCPEC-7) 

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    Event date: 2018.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  418. Local structure of high performance TiOx passivating layer revealed by electron energy loss spectroscopy International conference

    T. Mochizuki, K. Gotoh, A. Ohta, Y. Kurokawa, S. Miyazaki, T. Yamamoto, N. Usami

    World Conference on Photovoltaic Energy Conversion (WCPEC-7) 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  419. 3D visualization and analysis of defects distribution in multicrystalline silicon ingot International conference

    Y. Hayama, K. Tajima, S. Kamibeppu, T. Matsuomoto, T. Muramatsu, K. Kutsukake, H. Kudo, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  420. Estimation of dislocation regions in photoluminescence image using multi wafers of multicrystalline silicon by non-negative matrix factorization International conference

    H. Kudo, Y. Hayama, T. Matsumoto, K. Kutsukake, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  421. Characterization of hydrogen around a-Si:H/c-Si interface by resonance nuclear reaction analysis International conference

    K. Gotoh, S. Ogura, S. Kato, Y. Kurokawa, K. Fukutani, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  422. Application of weighted Voronoi diagrams to analysis on nucleation sites of multicrystalline silicon ingots International conference

    T. Muramatsu, S. Kamibeppu, K. Tajima, Y. Hayama, K. Kutsukake, K. Maeda, T. Matsumoto, H. Kudo, K. Fujiwara, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  423. Evaluation on detection of dislocation clusters in the photoluminescence image by approach of data science International conference

    K. Tajima, Y. Hayama, T. Muramatsu, K. Kutsukake, T. Matsumoto, H. Kudo , and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  424. Grain classification of crystal orientation by approach of data science International conference

    S. Kamibeppu, T. Muramatsu, Y. Hayama, T. Matsumoto, K. Kutsukake, H. Kudo, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  425. Impact of interlayers on thermal stability of TiOx passivating layer deposited by atomic layer deposition International conference

    T. Mochizuki, K. Gotoh, Y. Kurokawa, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  426. Investigation on the thermal stability of p-type CuI as hole selective contact for the silicon heterojunction solar cells International conference

    Min Cui, K. Gotoh, Y. Kurokawa, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  427. Effect of substrate modification on the optical and electrical properties of thermally-evaporated barium disilicide thin-films for solar cell applications International conference

    Lien T.K. Mai, Y. Nakagawa, R. Akaishi, Y. Kurokawa, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  428. Surface Passivation Property of Ultra-thin Titanium Oxide/Aluminum Oxide stacks for Silicon Based Selective Contact International conference

    X. Cheng, K. Gotoh, R. Nezasa, T. Mochizuki, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  429. Nb-doped TiO2 for silicon quantum dot solar cells as a carrier selective contact layer International conference

    Y. Kurokawa, K. Kitazawa, R. Akaishi, S. Ono, K. Gotoh, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  430. Dislocation confinement by SMART approach in crystallization of G2 sized silicon ingots International conference

    P. Krenckel, Y. Hayama, T. Trötschler, S. Riepe, K. Kutsukake, and N. Usami

    10th International Workshop on Crystalline Silicon for Solar Cells 

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    Event date: 2018.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  431. データ科学を活用した材料創製・材料評価に向けて

    沓掛健太朗、宇佐美徳隆、工藤博章、松本哲也、横井達矢、羽山優介、大野裕

    日本金属学会2018年春期(第162回)講演大会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:千葉工業大学   Country:Japan  

  432. 3D Visualization and Analysis of Dislocation Clusters in Multicrystalline Si Ingot by Approach of Data Science International conference

    Y. Hayama, T. Matsumoto, T. Muramatsu, K. Kutsukake, H. Kudo and N. Usami

    SiliconPV  

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rolex Forum of the Rolex Learning Center   Country:Switzerland  

  433. Impact of Growth Temperature on Passivation Performance and Hydrogen Profile Near the a-Si:H/c-Si Interface International conference

    K. Gotoh, S. Ogura, S. Kato, Y. Kurokawa, K. Fukutani, and N. Usami

    SiliconPV  

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Venue:Rolex Forum of the Rolex Learning Center   Country:Switzerland  

  434. Surface passivation effect of RF-plasma processed a-Si:H layers on the optical properties of BaSi2 epitaxial films

    Zhihao Xu, K. Gotoh, Tianguo Deng, K. Toko, N. Usami, and T. Suemasu

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  435. データ科学的手法を用いた多結晶Siインゴット中の転位クラスター生成点の解析

    羽山優介、Krenckel Patricia、Trötschler Theresa、松本哲也、村松哲郎、沓掛健太朗、工藤博章、Riepe Stephan、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:早稲田大学   Country:Japan  

  436. 画像処理によるフォトルミネッセンス画像における転位クラスターの検出とその最適化

    田島和哉、羽山優介、村松哲郎、沓掛健太朗、松本哲也、工藤博章、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  437. PECVD法を用いたシリコン量子ドット積層構造作製におけるバリア層の構造・光学特性評価

    赤石龍士郎、北沢宏平、小野聖、加藤慎也、後藤和泰、宇佐美徳隆、黒川康良

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  438. マイクロテクスチャガラス上へのBaSi₂薄膜の作製と光学評価

    中川慶彦、 Vismara Robin、Loef Thomas、Tian Yilei、後藤和泰、黒川康良、Isabella Olindo、 Zeman Miro、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  439. Al-Ge混合ペーストの印刷と焼成によるSi基板上へのSiGe層のエピタキシャル成長

    深見昌吾、増田翔太、中川慶彦、 後藤和泰、黒川康良、ダムリン マルワン、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  440. 2段階作製法で製膜したp型CuI薄膜のパッシベーション層開発 -ヘテロ接合型Si系太陽電池の新規正孔選択輸送層として-

    崔敏、後藤和泰、黒川康良、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  441. 高誘電率材料を用いたSiナノワイヤMOSキャパシタの特性評価

    根笹良太、黒川康良、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  442. TiOx パッシベーション層の熱耐性に SiOx 中間層が及ぼす影響

    望月健矢、後藤和泰、黒川康良、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  443. TiOx/結晶Si界面における化学パッシベーションの研究

    望月健矢、後藤和泰、大田晁生、小倉正平、黒川康良、宮崎誠一、福谷克之、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  444. p型BaSi2/ n型結晶Si太陽電池の開放電圧向上に向けた真空蒸着法における蒸発初期過程の制御

    藤原道信、高橋一真、中川慶彦、後藤和泰、黒川康良、伊藤孝至、宇佐美徳隆

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  445. ガスソース分子線エピタキシー法による高被覆率Geドットマスクを用いた光閉じ込め構造の作製

    太田湧士、本部惇史、後藤和泰、黒川康良、宇佐美徳隆、ドミトリー ユラソフ、アレクシー ナビコフ、ミカエル シャリーブ

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  446. 次世代高性能ヘテロ接合太陽電池に向けた新材料と界面制御

    宇佐美徳隆、 望月健矢、 増田翔太、 崔敏、 後藤和泰、 黒川康良

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:早稲田大学   Country:Japan  

  447. キャリア選択コンタクトにおける電極材料の界面仕事関数および成膜ダメージ評価:ALD-TiOx

    神岡武文、望月健矢、後藤和泰、林豊、磯貝勇樹、中村京太郎、宇佐美徳隆、大下祥雄

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  448. IMPROVEMENT OF TUNNEL OXIDE PASSIVATED CONTACT SOLAR CELLS USING ALUMINIUM INDUCED CRYTALLIZATION International conference

    S. Masuda, K. Gotoh, K. Nakamura, Y. Ohshita, and N. Usami

    Global Photovoltaic Conference 2018 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Venue:Kimdaejun Convention Center   Country:Korea, Republic of  

  449. Materials informatics for ideal crystalline silicon ingot for solar cells International conference

    N. Usami

    Global Photovoltaic Conference 2018 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kimdaejun Convention Center   Country:Korea, Republic of  

  450. FABRICATION AND CHARACTERIZATION OF BaSi2 THIN-FILMS THERMALLY-EVAPORATED ON Ge (100) MODIFIED SUBSTRATES International conference

    Lien T.K. Mai, Y. Nakagawa, Y. Kurokawa, and N. Usami

    Global Photovoltaic Conference 2018 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kimdaejun Convention Center   Country:Korea, Republic of  

  451. 多結晶シリコンPL像中の転位領域の非負値行列分解による推定に関する検討

    工藤博章、羽山優介、松本哲也、沓掛健太朗、宇佐美徳隆

    電子情報通信学会イメージ・メディア・クオリティ研究会 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:静岡大学   Country:Japan  

  452. 障壁高さのSi量子ドット太陽電池へ与える影響

    北沢宏平、赤石龍士郎、小野聖、宇佐美徳隆、黒川康良

    第2回フロンティア太陽電池セミナー 

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    Event date: 2017.11 - 2017.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:金沢大学   Country:Japan  

  453. 重み付きボロノイ図を用いたキャスト法による多結晶Siの核形成サイトの解析

    村松哲郎、高橋勲、沓掛健太朗、前田健作、藤原航三、松本哲也、工藤博章、宇佐美徳隆

    JCCG-46 第46回結晶成長国内会議 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  454. Simple Thermal Evaporation Route to Single-Phase and Highly-Oriented BaSi2 Thin Films International conference

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    2017 MRS Fall Meeting & Exhibit 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hynes Convension Center   Country:United States  

  455. Surface Passivation Quality of Atomic Layer Deposited TiO2 Thin Layer for Carrier Selective Contact on Crystalline Silicon International conference

    T. Mochizuki , K. Gotoh, I. Takahashi, Y. Kurokawa, and N. Usami

    2017 MRS Fall Meeting & Exhibit 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convension Center   Country:United States  

  456. Performance Improvement of Silicon Nanowire Based Solar Cells Using Al2O3/TiO2 Passivation Films International conference

    Y. Kurokawa, R. Nezasa, S. Kato, H. Miyazaki, I. Takahashi, and N. Usami

    2017 MRS Fall Meeting & Exhibit 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convension Center   Country:United States  

  457. Alternative Simple Method to Realize P-Type BaSi2 Thin Films for Si Heterojunction Solar Cells Application International conference

    K. Takahashi , Y. Nakagawa, K. O. Hara, I. Takahashi, Y. Kurokawa, and N. Usami

    2017 MRS Fall Meeting & Exhibit 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convension Center   Country:United States  

  458. Materials and Process Informatics for SMART Silicon Ingot International conference

    N. Usami, Y. Hayama, T. Matsumoto, H. Kudo, T. Yokoi, K. Matsunaga, K. Kutsukake, and Y. Ohno

    2nd Asian Nations Joint Workshop on Photovoltaics 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  459. INFLUENCE OF BARRIER LAYER'S HEIGHT ON THE PERFORMANCE OF Si QUANTUM DOTS SOLAR CELLS International conference

    K. Kitazawa, R. Akaishi, S. Ono, I. Takahashi, N. Usami, and Y. Kurokawa

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  460. DEVELOPMENT OF PREFERRED ORIENTATION IN EVAPORATED BASI2 FILMS ON SI(100) BY CONTROLLING THE NEAR-INTERFACE STRUCTURE International conference

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  461. INVESTIGATON ON BORON-DOPED P-BASI2/N-SI HETERO-JUNCTION SOLAR CELLS ON A TEXTURED SI(001) SUBSTRATE International conference

    T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  462. FABRICATION OF LIGHT TRAPPING STRUCTURE BY SELECTIVE ETCHING OF THIN Si SUBSTRATES MASKED WITH A Ge DOTS LAYER International conference

    A. Hombe, Y. Kurokawa, S. Akagi, Y. Yamamoto, D. Yurasov, A. Novikov, and Noritaka Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  463. MODULATION OF DEPOSITION TEMPERATURE OF TIO2 FOR PASSIVATIING ELECTRON SELECTIVE CONTACT FOR SILICON HETEROJUNTION SOLAR CELL International conference

    T. Mochizuki, K. Gotoh, I. Takahashi, Y. Kurokawa, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  464. INVESTIGATION OF EFFECTIVE LIGHT TRAPPING STRUCTURE WITH SUB-MICRON SIZE FOR CRYSTALLINE SILICON THIN FILM SOLAR CELLS International conference

    M. Sei, Y. Kurokawa, I. Takahashi, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  465. IMPACT OF BORON INCORPORATION ON PROPERTY OF SI SOLAR CELLS EMPLOYING P-TYPE POLY-SI BY ALUMINUM INDUCED CRYSTALIZATION International conference

    S. Masuda, K. Gotoh, I. Takahashi, K. Nakumura, Y. Ohshita, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  466. FABRICATION OF SILICON HETEROJUNCTION SOLAR CELLS WITH BARIUM DISILICIDE THIN FILMS PREPARATED BY THERMAL EVAPORATION International conference

    K. Takahashi, Y. Nakagawa, K. Goto, K. O. Hara, I. Takahashi, Y. Kurokawa, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  467. FABRICATION OF COPPER IODIDE BY 2-STEP METHOD AS HOLE SELECTIVE CONTACT FOR CRYSTALLINE SILICON SOLAR CELL -A POTENTIAL ALTERNATIVE TO AMORPHOUS SILICON HETEROJUNCTION International conference

    M. Cui, K. Gotoh, I. Takahashi, Y. Kurokawa, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Poster presentation  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  468. TRACKING AND VISUALLIZATION OF DISLOCATION GENERATION IN MULTICRYSTALLINE SILICON BY PHOTOLUMINESCENCE IMAGE ROCESSING International conference

    Y. Hayama, T. Matsumoto, K. Kutsukake, I. Takahashi, H. Kudo, and N. Usami

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  469. FORMATION OF BLACK SILICON USING THE SIGE SELF-ASSEMBLED ISLANDS AS A MASK FOR SELECTIVE ETCHING International conference

    Y. Ota, A. Hombe, Y. Kurokawa, N. Usami, A. Novikov, M. Shaleev, D. Yurasov, N. Baidakova, E. Morozova, E. Skorokhodov, and V. Verbus

    PVSEC-27 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lake Biwa Otsu Prince Hotel   Country:Japan  

  470. p型BaSi₂/n型テクスチャ構造Si太陽電池の太陽電池特性評価

    藤原道信、高橋一真、中川慶彦、後藤和泰、高橋勲、黒川康良、宇佐美徳隆

    第5回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  471. Si基板上へのSiGe層の高速エピタキシャル成長に向けて

    深見昌吾、増田翔太、本部惇史、中川慶彦、後藤和泰、黒川康良、ダムリン マルワン、宇佐美徳隆

    第5回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  472. 多結晶Siインゴットの核形成サイト解析への重み付きボロノイ図の応用

    村松哲郎、高橋勲、松本哲也、工藤博章、沓掛健太朗、前田健作、藤原航三、宇佐美徳隆

    第5回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  473. ガラス基板上へのBaSi₂/TiO₂膜ヘテロ構造の作製と評価

    中川慶彦、望月健矢、後藤和泰、黒川康良、宇佐美徳隆

    第5回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  474. 多結晶シリコンPL像中の転位領域のスパースコーディングによる推定に関する検討

    工藤博章、羽山優介、松本哲也、沓掛健太朗、宇佐美徳隆

    電子情報通信学会イメージ・メディア・クオリティ研究会 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸大学   Country:Japan  

  475. Effect of Sputtered a-Si on Effective Carrier Lifetime of c-Si with Ultra-Thin SiO2 Structure International conference

    K. Gotoh, I. Takahashi, Y. Kurokawa, and N. Usami

    EU PVSEC 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:RAI Convention & Exhibition Centre   Country:Netherlands  

  476. 同位体制御Si/SiGe単一電子スピンの1/f電荷揺らぎによる位相雑音 International conference

    米田淳、武田健太、大塚朋廣、中島峻、Matthieu R. Delbecq、Giles Allison、 本田拓夢、小寺哲夫、小田俊理、星裕介、宇佐美徳隆、伊藤公平、樽茶清悟

    日本物理学会 2017秋季大会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岩手大学   Country:Japan  

  477. Microstructural Characteristics of BaSi2 Epitaxial Films Fabricated by Thermal Evaporation International conference

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    International Conference on Solid State Devices and Materials (SSDM2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  478. Fabrication of a Si Nanowire MOS Capacitor for the Application to Energy Storage Devices International conference

    R. Nezasa, Y. Kurokawa, and N. Usami

    International Conference on Solid State Devices and Materials (SSDM2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  479. BaSi2蒸着膜中の酸素濃度低減と結晶配向への影響

    原康祐、山中淳二、有元圭介、中川清和、宇佐美徳隆

    第78回 応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  480. ヘテロ接合型Si系太陽電池の新規正孔選択輸送層p型Culの熱安定性

    崔敏、後藤和泰、髙橋勲、黒川康良、宇佐美徳隆

    第78回 応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  481. 単層Geドットマスクを用いた選択エッチングによる結晶Si太陽電池用光閉じ込め構造の薄型基板への作製

    本部惇史、黒川康良、赤木成明、山本裕三、宇佐美徳隆

    第78回 応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  482. データ科学的手法を用いた多結晶Si中の転位発生・伝搬の可視化

    羽山優介、松本哲也、沓掛健太朗、髙橋勲、工藤博章、宇佐美徳隆

    第78回 応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  483. Isotopically enriched Si-28/SiGe heterostructures with nearly atomic-scale roughness International conference

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    Event date: 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  484. Microwave induced frequency shift and its quadrature compensation for Si/SiGe spin qubit International conference

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    Event date: 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  485. Charge-noise-limited coherence and three-nines fidelity of an enriched Si/SiGe spin qubit International conference

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    Event date: 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  486. ヘテロ接合型Si系太陽電池の新規正孔選択輸送層p型Culの作製と評価

    崔敏、後藤和泰、髙橋勲、黒川康良、中村京太郎、大下祥雄、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  487. p型BaSi2/n型テクスチャSiのダイオード特性評価

    藤原道信、高橋一真、中川慶彦、後藤和泰、髙橋勲、黒川康良、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  488. p型BaSi2薄膜を用いたヘテロ接合型Si太陽電池の作製

    高橋一真、中川慶彦、原康祐、髙橋勲、黒川康良、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  489. BaSi₂蒸着膜のa-Si被膜による表面酸化抑制

    原康祐、Cham Thi Trinh、 黒川康良、有元圭介、山中淳二、中川清和、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  490. 大容量蓄電デバイス応用に向けたSiナノワイヤMOSキャパシタの作製

    根笹良太、黒川康良、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  491. Geドットマスクを利用して作製した新型光閉じ込め構造への原子層堆積法によるアルミナパッシベーション

    太田湧士、本部惇史、黒川康良、後藤和泰、髙橋勲、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  492. Al誘起成長法を応用した太陽電池のキャリア収集率評価

    増田翔太、後藤和泰、髙橋勲、中村京太郎、大下祥雄、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  493. キャリア選択接合層応用に向けたNbドープTiO₂薄膜の作製と物性評価

    望月健矢、後藤和泰、髙橋勲、黒川康良、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  494. 太陽電池用疑似単結晶Siの結晶品質向上に向けた機能性欠陥層の活用

    羽山優介、髙橋勲、沓掛健太朗、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  495. Geドットマスクを用いたアンモニア溶液エッチングによる太陽電池用新規光閉じ込め構造の開発

    本部惇史、黒川康良、Dmitrij Yuasov, Alexey Novikov, 宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  496. FDTD法を用いたシリコンナノワイヤ構造の光散乱シミュレーション

    清美樹、黒川康良、髙橋勲、宇佐美徳隆

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  497. 多結晶材料情報学によるスマートシリコンインゴットの創製に向けて

    宇佐美徳隆、羽山優介、髙橋勲、松本哲也、工藤博章、横井達矢、松永克志、沓掛健太朗、大野裕

    第14回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  498. 結晶シリコン太陽電池の現状とパッシベーション技術 Invited

    宇佐美徳隆

    日本真空学会東海支部 7月研究例会 「太陽電池と真空技術」 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岐阜大学   Country:Japan  

  499. Advanced materials and process for silicon-based heterojunction solar cells International conference

    N.Usami

    Academic Seminar on Materials Science and Engineering, Challenge for Next-Generation Materials Research in National University of Singapore and Nagoya University 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National University of Singapore   Country:Singapore  

  500. Solar Cells Application of p-type poly-Si Thin Film by Aluminum Induced Crystallization International conference

    S. Masuda, K. Gotoh, I. Takahashi, K. Nakamura, Y. Ohshita, and N. Usami

    44th IEEE Photovoltaics Specialists Conference 

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    Event date: 2017.6

    Language:English   Presentation type:Poster presentation  

    Venue:Marriott Wardman Park Hotel   Country:United States  

  501. Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells International conference

    K. Gotoh, M. Cui, N. C. Thanh, K. Koyama, I. Takahashi, Y. Kurokawa, H. Matsumura, and N. Usami

    44th IEEE Photovoltaics Specialists Conference 

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    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Marriott Wardman Park Hotel   Country:United States  

  502. Toward bandgap widening of BaSi2 by carbon substitution using 3C-SiC-on-Si heteroepitaxial wafer International conference

    Y. Nakagawa, Y. Kurokawa, and N. Usami

    European Materials Research Society 2017 Spring Meeting 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasbourg Convention Centre   Country:France  

  503. BaSi2/Si heterostructures for photovoltaic applications International conference

    N. Usami, K. Takahashi, J. A. Wibowo, Y. Nakagawa, and Y. Kurokawa

    European Materials Research Society 2017 Spring Meeting 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Strasbourg Convention Centre   Country:France  

  504. Ultrathin AlOx gentle passivation layer for improving the minority carrier lifetime of BaSi2 filme prepared by vacuum evaporation method for solar cell application International conference

    N. M. Shaalan, N. Usami, and K. O. Hara

    European Materials Research Society 2017 Spring Meeting 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasbourg Convention Centre   Country:France  

  505. Realization of p-type BaSi2 by simple thermal evaporation on Si grown by aluminium induced crystallization International conference

    J. A. Wibowo, Y. Nakagaya, Y. Kurokawa, and N. Usami

    Growth of strained Si/SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy  

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Venue:The University of Warwick   Country:United Kingdom  

  506. Growth and Characterization of Isotopically Enriched Si-28/SiGe Heterostructures International conference

    S. Miyamoto , Y. Hoshi, N. Usami, and K. M. Itoh

    The 10th International Conference on Silicon Epitaxy and heterostructures 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Warwick   Country:United Kingdom  

  507. Realization of p-type BaSi2 by simple thermal evaporation on Si grown by aluminium induced crystallization International conference

    J. A. Wibowo, Y. Nakagaya, Y. Kurokawa, and N. Usami

    The 10th International Conference on Silicon Epitaxy and heterostructures 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Venue:The University of Warwick   Country:United Kingdom  

  508. Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique International conference

    Y. Hayama, I. Takahashi, and N. Usami

    7th Internationl Conference on Crystalline Silicon Photovoltaics 

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    Event date: 2017.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Freiburg Concert Hall   Country:Germany  

  509. Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts International conference

    K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

    7th Internationl Conference on Crystalline Silicon Photovoltaics 

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    Event date: 2017.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Freiburg Concert Hall   Country:Germany  

  510. Characterization of p-BaSi2/n-Si solar cells using Boron-doped p-BaSi2 on textured n-Si (001) grown by molecular beam epitaxy

    T. Deng, R. Takabe, Z. Xu, K. Toko, K. Gotoh, N. Usami, and T. Suemasu

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  511. SMART法を用いた太陽電池用擬似単結晶Siの不純物制御

    羽山優介、高橋勲、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  512. BaSi2蒸着膜中の酸素不純物に関する調査

    原康祐、山本千綾、山中淳二、有元圭介、中川清和、黒川康良、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  513. テクスチャSi上に真空蒸着法で形成したBaSi2薄膜の評価

    藤原道信、高橋一真、中川慶彦、後藤和泰、黒川康良、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  514. スピンコート法で作製したCuIのヘテロ接合型太陽電池のホール選択層への検討

    後藤和泰、崔敏、高橋勲、黒川康良、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:パシフィコ横浜   Country:Japan  

  515. 熱ALDによるAlOx層成膜時の酸化剤とパッシベーション性能の関係

    市川寛章、高橋勲、宇佐美徳隆、白澤勝彦、高遠秀尚

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  516. Siヘテロ接合太陽電池応用に向けたp型BaSi2の作製技術開発

    高橋一真、中川慶彦、原康祐、黒川康良、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  517. Al誘起成長法を用いたp型Si多結晶薄膜の太陽電池応用

    増田翔太、後藤和泰、高橋勲、中村京太郎、大下祥雄、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  518. 真空蒸着法により作製したa-Si/BaSi2の接触抵抗低減効果

    須原貴道、中川慶彦、原康祐、黒川康良、末益崇、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  519.  3C-SiC 膜上に成長したBaSi2 膜の結晶構造の評価

    中川慶彦、黒川康良、宇佐美徳隆

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  520. Surface Morphology of Light Trapping Structure for Si Crystalline Thin Film Solar Cells formed using a Ge(Si) Dot Mask Grown by SS MBE International conference

    A. Hombe, Y. Kurokawa, D. V. Yurasov, M. V. Shaleev, E. E. Morozova, A. V. Novikov, and N. Usami

    XXI International symposium Nanophysics & Nanoelectronics 

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    Event date: 2017.3

    Language:English   Presentation type:Poster presentation  

    Country:Russian Federation  

  521. 薄膜Si太陽電池応用のための新規光閉じ込め構造に関する光学シミュレーション

    清美樹, 黒川康良, 宇佐美徳隆

    フロンティア太陽電池セミナー 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学 化学研究所   Country:Japan  

  522. Zn3P2/BaSi2ヘテロ接合太陽電池に向けたダイオード特性評価

    高橋一真, 勝部涼司, 黒川康良, 野瀬嘉太郎, 宇佐美徳隆

    フロンティア太陽電池セミナー 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学 化学研究所   Country:Japan  

  523. アルミニウム誘起成長法による高濃度p型Si多結晶薄膜の太陽電池応用に関する研究

    増田翔太, 高橋勲, 後藤和泰, 中村京太郎, 大下祥雄, 宇佐美徳隆

    第26回学生による材料フォーラム 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学   Country:Japan  

  524. Geometry control of silicon-based photonic nanostructures by modulated stacking conditions of germanium dots International conference

    D. Furuta, O. Aonuma, Y. Kurokawa, N. Usami

    26th International Photovoltaic Solar Energy Conference (PVSEC-26) 

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    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  525. Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures International conference

    Y. Kurokawa, O. Aonuma, T. Tayagaki, I. Takahashi, N. Usami

    26th International Photovoltaic Solar Energy Conference (PVSEC-26) 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  526. Optical characterization of double-side textures using photonic nanostructures for thin-wafer c-Si solar cells International conference

    T.Tayagaki, D. Furuta, O. Aonuma, I. Takahashi, Y.Hoshi, Y. Kurokawa, and N.Usami

    SSDM 2016 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  527. Siヘテロ接合太陽電池におけるホール選択層としてのBaSi2の検討

    高橋一真、中川慶彦、原康祐、黒川康良、宇佐美徳隆

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  528. 同位体制御されたSi/SiGe量子ドットにおける単一電子スピン共鳴

    米田淳、武田健太、 大塚朋廣、 中島峻、  Matthieu R. Delbecq、 Giles Allison、 本田拓夢、小寺哲夫、 小田俊理、 星裕介、 宇佐美徳隆、伊藤公平、樽茶清悟

    日本物理学会秋季年会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  529. Minority-carrier lifetime in B-doped BaSi2 epitaxial films

    M.Emha Bayu, C.T.Trinh, R.Takabe, K.Toko, N.Usami, T. Suemasu

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  530. アルミニウム誘起層交換成長法によるシリコン薄膜成長のカイネティクスと応用

    宇佐美徳隆

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  531. Realization of vertical Ge/Si nanopillars by maskless etching of Ge quantum dot nanostructures

    S.Tutashkonko, N.Usami

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  532. Growth of Crystalline BaSi2 Thin Films by Vacuum Evaporation on Poly-Crystalline Silicon Fabricated by Aluminum Induced Crystallization

    J.A.Wibowo, I.Takahashi, K.O.Hara and N.Usami

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  533. 真空蒸着法により作製したBaSi2/SUS304の断面評価

    須原貴道、青柳健太、原康祐、末益崇、宇佐美徳隆

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  534. Characterization of undoped-BaSi2 on textured Si (001) substrate grown by Molecular Beam Epitaxy

    T.Deng, R.Takabe, S.Yachi, Z.Xu, M.Emha Bayu, K.Toko, N.Usami, T.Suemasu

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  535. 固体ソースMBE法で作製した単層Geドットマスクを用いた結晶Si太陽電池用光閉じ込め構造の表面形態

    本部惇史、黒川康良、Dmitrij Yuasov、Alexey Novikov、宇佐美徳隆

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  536. 単一原料の蒸着によるa-Si/BaSi2積層構造の作製

    原康祐、Cham Thi Trinh、黒川康良、有元圭介、山中淳二、中川清和

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  537. SiNx:H/AlOxパッシベーションスタック構造を持つSi基板への光照射の影響

    市川寛章、高橋勲、宇佐美徳隆、白澤勝彦、高遠秀尚

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  538. Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting

    Supawan Joonwichien

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  539. Si/SiGe多重量子ドットの形成と電荷状態測定

    大塚朋廣、武田健太、米田淳、本田拓夢、Matthieu Delbecq、Giles Allison、Marian Marx、中島峻、 小寺哲夫、小田俊理、星裕介、宇佐美徳隆、伊藤公平、樽茶清悟

    日本物理学会秋季年会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  540. 伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造の結晶成長中における表面形状形成過程に関する研究

    山田崇峰、宇津山直人、佐藤圭、白倉麻衣、山本千綾、有元圭介、山中淳二、原康祐、宇佐美徳隆、澤野憲太郎、中川清和

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  541. 伸張歪みSi/SiGe/Si(110)ヘテロ構造の表面モフォロジーに成長速度が及ぼす影響

    佐藤圭、宇津山直人、山田崇峰、有元圭介、山中淳二、原康祐、澤野憲太朗、宇佐美徳隆、中川清和

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  542. イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価

    村上太陽、有元圭介、山中淳二、原康祐、山本千綾、宇佐美徳隆、星裕介、有澤洋、澤野憲太郎、中川清和

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  543. Silicon-based materials for heterojunction solar cells International conference

    N.Usami

    Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  544. Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells International conference

    A.Hombe, Y.Kurokawa, and N.Usami

    IEEE Nano2016 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  545. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique International conference

    Y.Arisawa, K.Sawano, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  546. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells International conference

    G.Anandha babu, I.Takahashi, T.Muramatsu, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  547. Dependence of Grain Boundary Structure Controlled by Artificially Designed Seeds on Dislocation Generation International conference

    T.Iwata, I.Takahashi, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  548. On the growth mechanism of a muticrystalline silicon ingot with small grains by using single layer silicon beads International conference

    T.Muramatsu, I.Takahashi, G.Anandha Babu, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  549. Controlling Impurity Distributions in Crystalline Si for Solar Cells by Using Artificial Designed Defects International conference

    Y.Hayama, I.Takahashi, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  550. Tuning the Aluminum-Induced Crystallization process to realize a poly-Si seed-layer suitable for epitaxy International conference

    S.Tutashkonko, N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  551. Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE International conference

    K.Arimoto, S.Yagi, J.Yamanaka, K.Nakagawa, N.Usami, and K.Sawano

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  552. Growth of Si crystals from the crucible repelling Si melt by directional solidification International conference

    R.Komatsu, T.Okubo, C.Mizuno, Y.Fujii, I.Takahashi, and N.Usami

    ICCGE18 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  553. モノライクインゴットの新規製造技術:SMART法

    高橋勲、宇佐美徳隆

    日本学術振興会「結晶加工と評価技術」第145委員会第149回研究会 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  554. Investigation of p-type Emitter Layer Materials for Heterojunction Barium Silicide Thin Film Solar Cells International conference

    K.Takahashi, Y.Nakagawa, K.O.Hara, Y.Kurokawa, and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  555. Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization International conference

    J.A.Wibowo, I.Takahashi, K.O.Hara, and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  556. Investigation on Minority-carrier Lifetime and Solar Cell Properties of BaSi2 Formed on Multicrystalline Si Substrates International conference

    Y.Li, C.T.Trinh, R. Takabe, K.Toko, N.Usami, and T.Suemasu

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  557. Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation International conference

    K.O.Hara, C.T.Trinh, Y.Nakgawa, Y.Kurokawa, K.Arimoto, J.Yamanaka, K.Nakagawa, and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  558. Post -Annealing Effects on BaSi2 Evaporated Films Grown on Si Substrates International conference

    T.Suhara, K.Murata, A.Navabi, K.O.Hara, Y.Nakagawa, C.T.Trinh, Y.Kurokawa, T.Suemasu, K.L.Wang, and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  559. Proposal of a Method to Realize BaSi2 Thin Films with Uniform Orientation using Reactivity of Excessive Ba in the Film and Si Substrate in Vacuum Evaporation International conference

    Y.Nakagawa, C.T.Trinh, K.O.Hara, Y. Kurokawa, T. Suemasu and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  560. The Growth of Polycrystalline Orthorhombic BaSi2 on Ge Substrate by Vacuum Evaporation Method International conference

    C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami

    APAC Silicide 2016 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  561. Photoresponse Properties of BaSi2 Film Grown on Si (100) by Vacuum Evaporation International conference

    C.T.Trinh, Y.Nakagawa,and N.Usami

    EUPVSEC 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  562. Effects of Luminescent Coupling in Perovskite/c-Si Multijunction Solar Cells with Nanostructured Interlayer International conference

    T.Tayagaki, Y.Kurokawa, and N.Usami

    EUPVSEC 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  563. Measurement of charge states in Si/SiGe multiple quantum dots International conference

    T.Otsuka, K.Takeda, J.Yoneda, T.Honda, M.R.Delbecq, G.Allison, M.Marx, T.Nakajima, T.Kodera, S. Oda,Y.Hoshi, N.Usami, K.M. Itoh, and S.Tarucha

    Silicon Quantum Electronics Workshop 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Netherlands  

  564. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates International conference

    Y.Arisawa, Y.Hoshi, K.Sawano , J.Yamanaka, K.Arimoto, C.Yamamoto, and N.Usami

    7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016) 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  565. Application of New Doping Techniques to Solar Cells for Low Temperature Fabrication International conference

    I.Takahashi, Y.Sujihara, H.Yating, J.Wibowo, Y.Kurokawa, and N.Usami

    43rd IEEE 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  566. Control of the Electrical Properties of BaSi2 Evaporated Films for Solar Cell Applications International conference

    K.O.Hara, C.T. Trinh, K.Arimoto, J.Yamanaka, K.Nakagawa, Y.Kurokawa, T. Suemasu, and N.Usami

    43rd IEEE 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  567. SiNx:H/AlOxパッシベーションスタック層を用いた光照射によるSi基板のライフタイム向上

    市川寛章,高橋勲,宇佐美徳隆,白澤勝彦,高遠秀尚

    第13回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  568. フォトニックナノ構造とMetal AssistedChemical Etchingを用いた新規光閉じ込め構造の作製と光学特性

    清美樹, 黒川康良, 宇佐美徳隆

    第13回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  569. A Simple Approach to Grow BaSi2 Thin Film on Foreign Substrates as an Absorber for High-Performance Thin Film Solar Cell International conference

    N.Usami, K.O.Hara, Y.Nakagawa, C.T.Trinh, T.Suhara, J.Adrian.Wibowo, I.Takahashi, T.Suemasu

    2016 MRS Spring Meeting  

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    Event date: 2016.3 - 2016.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  570. 高性能結晶シリコン太陽電池の実現に向けた新規ヘテロ接合用材料と高品質シリコン結晶に関する研究

    宇佐美徳隆、高橋勲、黒川康良、中塚理

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学   Country:Japan  

  571. Drastic improvement of effective carrier lifetimes in Si nanowires embedded with anodic aluminum oxide by post-deposition anneal

    H.V.Nguyen, S.Kato, N.Usami

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  572. Minority-carrier lifetime of BaSi2 formed on various multicrystalline Si substrates

    Y.LI, C.T.Trinh, R.Takabe, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  573. Photoresponse property of BaSi2 film grown on Si substrate by vacuum evaporation

    C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, N.Usami

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  574. MACES法で作製したシリコンナノワイヤの細線化

    矢野貢、黒川康良、宮島晋介、山田明

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  575. シリコンナノワイヤ太陽電池のキャリア収集特性の改善

    加藤慎也、阿部祐介、白柳裕介、黒川康良、宮島晋介、小長井誠

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  576. 単層Geドットマスクを用いたアルカリエッチングによる結晶Si太陽電池用新規光閉じ込め構造

    本部惇史、黒川康良、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  577. 表面形状のランダムネスを有するフォトニックナノ構造の光学特性解析

    青沼理、黒川康良、太野垣健、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  578. Geドット積層条件の変調によるフォトニックナノ構造の形状制御

    古田大知、青沼理、黒川康良、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  579. フォトニックナノ構造とMetal Assisted Chemical Etching 法を用いた新規光閉じ込め構造の作製

    清美樹、黒川康良、宇佐美 徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  580. Siビーズ核形成層によるハイパフォーマンス多結晶Siの育成

    村松哲郎、高橋勲、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  581. 欠陥マニピュレーションに向けた結晶Siの粒界構造と転位発生の関係

    岩田大将、高橋勲、宇佐美 徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  582. 機能性欠陥層を用いた太陽電池用結晶シリコンの不純物制御

    羽山優介、高橋勲、宇佐美 徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  583. Al誘起成長法を用いたp型薄膜多結晶Siの太陽電池セルへの応用

    高橋勲、筋原康博、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  584. Al誘起成長Ge薄膜をシードとした低不純物密度Ge層の厚膜形成

    中田充紀、都甲薫、原康祐、宇佐美徳隆、末益崇

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京工業大学   Country:Japan  

  585. 微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性

    宇津山直人、佐藤圭、山田 崇峰、有元圭介、山中淳⼆、中川清和、原康介、宇佐美徳隆、澤野憲太郎

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京工業大学   Country:Japan  

  586. イオン注入を利用した圧縮歪みSi/緩和Si1-xCxヘテロ構造の作製におけるイオン注入条件の検討

    有澤洋、澤野憲太郎、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  587. 高速成膜によるBaSi#2#DR蒸着膜の構造・特性変化

    原康祐、黒川康良、有元圭介、山中 淳二、中川清和、末益崇、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  588. アンドープBaSi2蒸着膜へのポストアニール効果

    須原貴道、村田晃一、中川慶彦、原康祐、黒川康良、末益崇、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  589. BaSi2薄膜太陽電池におけるp型エミッタ層材料の探索

    高橋一真、中川慶彦、原康祐、黒川康良、宇佐美徳隆

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  590. シリサイド系半導体材料BaSi₂を用いたSiベースヘテロ接合太陽電池の作製

    塚原大地、武内大樹、髙部涼太、都甲薫、宇佐美徳隆、末益崇

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  591. 結晶シリコン太陽電池の高効率化技術

    宇佐美徳隆

    第7回薄膜太陽電池セミナー 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:山形大学   Country:Japan  

  592. Light-induced recovery of effective carrier lifetime in boron-doped Czochralski silicon at room temperature International conference

    H.Ichikawa, I.Takahashi, N.Usami, K.Shirasawa, and H.Takato

    6th International Conference on Silicon Photovoltaics 

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    Event date: 2016.3

    Language:English   Presentation type:Poster presentation  

    Country:France  

  593. 結晶シリコン太陽電池の高効率化技術

    宇佐美徳隆

    第23回次世代自動車公開シンポジウム 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学グリーンモビリティ連携研究センター   Country:Japan  

  594. シリコンインゴット成長の新技術

    高橋勲、宇佐美徳隆

    日本学術振興会 第161委員会 第93回研究会プログラム「太陽電池用材料と結晶成長技術の新展開」  

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名城大学 名駅サテライト   Country:Japan  

  595. Growth of High Quality BaSi2 Film on Ge Substrate by Vacuum Evaporation Method International conference

    C.T.Trinh, Y.Nakagawa, K.O.Hara, T.Suemasu, and N.Usami

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  596. Growth of thick polycrystalline silicon layer by aluminum-induced crystallization International conference

    Y.Sujihara, S.Tutashkonko, I.Takahashi, and N.Usami

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  597. Seed Manipulation for ARtificially controlled defects Technique (SMART)as a new growth method for high-quality quasi-mono crystalline silicon International conference

    I.Takahashi, T.Iwata, and N.Usami

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  598. Modification of the electrical properties of BaSi2 films by alkali-metal-fluoride treatment International conference

    K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko,T.Suemasu, and N.Usami

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  599. Low density of dislocation clusters in high performance multicrystalline silicon ingots using novel seeding technique International conference

    G.Anandhababu, I.Takahashi, S.Matsushima, and N.Usami

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  600. Quantitative analysis of electrical activity of grain boundaries through high spatial resolution photoluminescence imaging International conference

    K.Kutsukake, S.Ninomiya, S.Sugioka, M.Deura, Y.Ohno, N.Usami, and I.Yonenaga

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  601. Study on surface potential distribution and minority-carrier lifetime of BaSi2 formed on multicrystalline Si substrates International conference

    Y.Li, M.Baba, C.T.Trinh, K.Toko, T.Sekiguchi, N.Usami, and T.Suemasu

    25th International Photovoltaic Science and Engineering Conference and Exhibition Grobal Photovoltaic Conference 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  602. Growth of Silicon Bulk Crystals for solar cells International conference

    Isao Takahashi, Noritaka Usami

    The first International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  603. Challenges in Photovoltaic International conference

    N.Usami

    12th International Conference on Flow Dynamics 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Japan  

  604. Impact of Grain Boundary Character in Multicrystalline Silicon on Phosphorus External and Internal Gettering of Impurities for Solar Cell International conference

    S.Joonwichien, I. Takahashi, and N.Usami

    European PV Solar Energy Conference and Exhibition 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  605. Novel Light Trapping Scheme Based on Single-Side Modulated Photonic Nanostructure for Back-Contact Thinner-Wafer Solar Cells International conference

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, and N.Usami

    European PV Solar Energy Conference and Exhibition 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  606. A Proposal for Crystalline Silicon Solar Cells with the Back-Side SiGe Quantum Dot Arrays Grown by SolidSource Molecular Beam Epitaxy International conference

    Y.Hoshi, N.Usami, and T.Tayagaki

    European PV Solar Energy Conference and Exhibition 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  607. Ge(111)基板上BaSi2エピタキシャル膜の分光感度特性

    高部涼太、馬場正和、原康祐、都甲薫、宇佐美徳隆、末益崇

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  608. SMART (Seed Manipulation for ARtificially controlled defects Technique)法を用いたモノライクシリコンの結晶成長

    高橋勲、岩田大将、市川寛章、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  609. Al誘起成長におけるa-Si層の厚膜化がpoly-Siの成長メカニズムに及ぼす影響

    筋原康博、高橋勲、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  610. ホスフィンを利用したSi基板中へのPドーピングによる電界効果パッシベーションの検討

    黄雅テイ、星裕介、高橋勲、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  611. Σ3粒界からの微小角度ズレと融液成長過程における欠陥発生

    岩田大将、高橋勲、宇佐美 徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  612. イオン注入による欠陥制御を用いて作製した圧縮歪みSi/Si₁-xCx ヘテロ構造の熱的安定性

    有澤洋、星裕介、有元圭介、山中淳二、中川清和、澤野憲太郎、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  613. In-situ MoOxキャップを施したBaSi2エピタキシャル膜の電気/光学特性評価

    武内大樹、高部 涼太、都甲薫、原康祐、宇佐美徳隆、末益崇

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  614. Study on minority-carrier lifetime mapping of BaSi2 formed on multicrystalline Si substrates

    O.Li, M.Baba, C.T.Trinh, K.Toko, T.Sekiguchi, N.Usami, and T.Suemasu

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  615. 固体ソースMBE法によるSiテクスチャ基板上へのGeドット積層構造の結晶成長と太陽電池応用

    星裕介、青沼理、太野垣健、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  616. アルカリ金属フッ化物処理によるBaSi2薄膜の電気特性制御

    原康祐、有元圭介、山中淳二、中川清和、都甲薫、末益崇、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  617. 真空蒸着法で作製したBaSi2膜の面方位の形成メカニズムの検討

    中川慶彦、原康祐、黒川康良、末益崇、宇佐美徳隆

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  618. Structural control of dendrite crystals in practical size silicon ingots grown by floating cast method International conference

    I.Takahashi, S.Joonwichien, T.Hiramatsu, S.Matsushima, N.Usami

    the 42nd IEEE Photovoltaic Specialists Conference 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  619. 顕微PLイメージングによるシリコン結晶中の粒界特性評価

    沓掛健太朗、二宮駿也、杉岡翔太、出浦桃子、大野裕、宇佐美徳隆、米永一郎

    第12回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  620. Selective Growth of Epitaxial Si NanowireArray Using SiH4 and Si2H6

    H.V.Nguyen, Y.Hoshi, N.Usami

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    Event date: 2015.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  621. Effects of the Al/Si thin film thickness on theAluminum-Induced Crystallization Process

    S.Tutashkonko, H.V.Nguyen, N.Usami

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    Event date: 2015.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  622. pn接合実現に向けた真空蒸着法によるBaSi2薄膜およびSnS薄膜の作製

    須原貴道、鈴木慎太郎、原康祐、末益崇、宇佐美徳隆

    第12回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  623. 原料分解反応を制御した真空蒸着法によるSi基板上BaSi2膜の高品質化

    中川慶彦、原康祐、末益崇、宇佐美徳隆

    第12回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  624. ナノ構造体・結晶シリコン融合構造の太陽電池特性と光生成キャリアの取出し

    星裕介、高橋勲、青沼理、太野垣健、宇佐美徳隆

    第12回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  625. SMART (Seed Manipulation for ARtificiallycontrolled defects Technique)法による新規モノライクシリコンの結晶成長

    高橋勲、岩田大将、宇佐美徳隆

    第12回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  626. Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique International conference

    Y.Hoshi, K.Arimoto, K.Sawano, Y.Arisawa, K.Fujiwara, J.Yamanaka, K.Nakagawa, N.Usami

    The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI 9) 

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    Event date: 2015.5

    Language:English   Presentation type:Poster presentation  

    Country:Canada  

  627. Seed Manipulation for ARtificially controlled defects Technique (SMART) as a new growth method for high-quality mono-like silicon crystals International conference

    I.Takahashi, T.Iwata, S.Joonwichien, N.Usami

    8th International Workshop on Crystalline Silicon for Solra Cells 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  628. Crystalline Si solar cells with photonic nanostructures formed by colloidal lithography on textured substrates International conference

    Y.Hoshi, Y.Hirai, N.Usami

    ISPlasma2015 

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    Event date: 2015.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  629. 実用サイズシリコンインゴットの組織制御による転位発生抑制

    高橋勲、平松巧也、岩田大将、松島悟、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  630. 伸張歪みSi/緩和SiGe/Si(110)の表面モフォロジーへの成長速度の影響

    宇津山直人、佐藤圭、有元 介、山中淳二、中川清和、宇佐美徳隆、澤野憲太

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東海大学   Country:Japan  

  631. イオン注入成長法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造MOSFETの電気特性評価

    中込諒、酒井翔一朗、藤原幸亮、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東海大学   Country:Japan  

  632. 変調表面テクスチャにおける光閉じ込め効果の理論的検討

    太野垣健、岸本裕子、星裕介、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  633. Arイオン注入法を用いた圧縮歪み/緩和Si1-xCxヘテロ構造の作製

    有澤洋, 星裕介, 藤原幸亮, 山中淳二, 有元圭介, 中川清和, 澤野憲太郎, 宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  634. コロイダルリソグラフィを利用したテクスチャSi基板表面へのナノ構造形成とその太陽電池特性

    星裕介, 平井悠司, 宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  635. SnS/BaSi2ヘテロ接合太陽電池に向けた真空蒸着法によるSnS薄膜作製

    鈴木慎太郎,須原貴道,原康祐,宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  636. ナノ構造体・結晶シリコン融合構造におけるGeドット積層構造とフォトニックナノ構造の独立形状制御

    青沼理, 星裕介, 太野垣健, 宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  637. 真空蒸着法により作製したBaSi2薄膜の膜厚による影響

    中川慶彦、原康祐、末益崇、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  638. 真空蒸着法による導電性基板上へのBaSi2薄膜の作製

    須原貴道、原康祐、末益崇、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  639. 浮遊キャスト成長法におけるデンドライト結晶を利用した多結晶Siの組織制御と転位密度の低減効果の実証

    平松巧也、高橋勲、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  640. シードキャスト法における結晶Siの粒界と転位発生との関係

    岩田 大将, 高橋 勲,宇佐美 徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  641. 歪みSi/Si1-xCx/Si(001)ヘテロ構造の結晶性と不純物活性化過程との関係

    藤原幸亮、酒井翔一朗、小林昭太、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東海大学   Country:Japan  

  642. Formation of MoO3/n-BaSi2 heterojunctions for solar cell applications

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  643. Effects of Fabrication Process of Anodic Aluminum Oxide on Selective Growth of Si Nanowire Arrays

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  644.  固相成長テンプレートを用いたGe(111)基板上へのBaSi2膜作製

    高部涼太、原康祐、都甲薫、宇佐美徳隆、末益崇

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  645. 真空蒸着法による導電性基板上への BaSi2薄膜の作製

    須原貴道、原康祐、末益崇、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  646. 希少元素フリーSnS/BaSi2太陽電池の提案と数値シミュレーション

    原康祐、末益崇、宇佐美徳隆

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  647. 多結晶Si上に成長したBaSi2薄膜表面のKFM法によるポテンシャル分布評価

    李云鵬、馬場正和、沼田涼平、都甲薫、宇佐美徳隆、関口隆史、末益崇

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  648. MBE法で形成したBaSiエピタキシャル膜/酸化膜界面の欠陥準位評価

    武内大樹、高部涼太、都甲薫、原康祐、宇佐美徳隆、末益崇

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  649. 顕微PLイメージング:多結晶シリコンウエハ評価法としての可能性

    二宮駿也、沓掛健太朗、出浦桃子、大野裕、宇佐美徳隆、米永一郎

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  650. SiGe系量子ドットを利用したフォトニックナノ構造形成と太陽電池への応用 International conference

    宇佐美徳隆

    電子情報技術産業協会第12回「量子ドット利用デバイス技術分科会」 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:電子情報技術産業協会会議室   Country:Japan  

  651. Growth of high-quality multicrystalline silicon ingot for solar cells International conference

    N.Usami

    Singapore-Japan Joint Workshop on Photovoltaics 2014 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Singapore  

  652. Optical Properties of Quantum-Dot-Based Surface Photonic Nanostructures in Ge/Si Quantum Dot Solar Cells International conference

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Optical Nanostructures and Advanced Materials for Photovoltaics  

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Australia  

  653. Geometry Control of Si-based Photonic Nanostructures Coupled with Quantum Dot Multilayers and Integration to Crystalline Si Solar Cells International conference

    N.Usami, Y.Hoshi, T.Tayagaki, I.Takahashi, O.Aonuma, A.Novikov, D.Yurasov, T.Oikawa, K.Ohdaira

    Optical Nanostructures and Advanced Materials for Photovoltaics  

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Australia  

  654. A proposal of photonic nanostructures coupled with textured Si substrates for advanced light trapping International conference

    Y.Hoshi, T.Tayagaki, Y.Kishimoto, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  655. Large-grained Ge Thin Films on Glass Formed by Al-induced Crystallization for Inexpensive Tandem Solar Cells International conference

    K.Toko, K.Nakazawa, N.Oya, N.Usami, T.Suemasu

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  656. Si-based New Material for High Efficiency Thin Film Solar Cell Applications International conference

    W.Du, K.Toko, M.Baba, R.Takabe, N.Usami, T.Suemasu

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  657. Correlation Between PL Intensity and Dislocation Density in Silicon Crystal Using High Spatial Resolution PL Measurement International conference

    S.Ninomiya, K.Kutsukake, M.Deura, Y.Ohno, N.Usami, I. Yonenaga

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  658. Evaluation of Surface Potential Distributions Around Grain Boundaries and Minority-carrier Diffusion Lengths in Impurity Doped n- and p- type BaSi2 Epitaxial Films International conference

    D.Tsukahara, M.Baba, K.Toko, K.O.Hara, N.Usami, K.Watanabe, T.Sekiguchi, T.Suemasu

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  659. Epitaxial Growth of BaSi2 Films on Ge(111) Substrates by Molecular Beam Epitaxy International conference

    R.Takabe, M.Baba, W.Du, K.Toko, K.O.Hara, N.Usami , T.Suemasu

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  660. Effects of Surface Conditions and Grain Boundaries on Minority-carrier Lifetime in Undoped n-BaSi2 on Si(111) International conference

    R.Takabe, K.O.Hara, M.Baba, W.Du, K.Toko, N.Usami, T.Suemasu

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  661. Enhancement of Light Absorption in Ge/Si Quantum Dots Solar Cells by Surface Photonic Nanostructures International conference

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  662. Fast Formation of Poly-Si Thin Films with 200um Grains by Aluminum-Induced Crystallization with a Temperature Profiling grains by Aluminum-Induced Crystallization with a temperature profiling International conference

    S.Tutashkonko, V.H.Nguyen, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  663. Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires International conference

    V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  664. Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuum evaporation for solar cell applications International conference

    Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  665. How can we control adjacent dendrite crystals in parallel direction to realize high-quality multicrystalline Si ingot for solar cells? International conference

    T.Hiramatsu, I.Takahashi, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  666. Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties International conference

    O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  667. Comparison of Phosphorus Gettering Effect in Faceted Dendrite and Small Grain of Multicrystalline Silicon Wafers Grown by Floating Cast Method International conference

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  668. Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots International conference

    I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  669. Numerical simulation of new earth-abundant SnS/BaSi2 thin-film solar cells with high efficiencies exceeding 20 % International conference

    K.O.Hara, N.Usami

    The 6th World Conference on Photovoltaic Energy Conversion 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  670. Large-scale implementation of floating cast method to realize high-quality multicrystalline silicon ingot International conference

    N.Usami

    The 7th forum on the Science and Technology of Silicon Materials 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  671. Calculation of temperature distribution for controlling growth of dendrite crystals to decrease dislocation density in a multicrystalline Silicon ingot International conference

    T.Hiramatsu, I.Takahashi, S.Matsushima, N.Usami

    The 7th forum on the Science and Technology of Silicon Materials 

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    Event date: 2014.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  672. Multiscale Si-based Materials for Photovoltaic Applications International conference

    N.Usami , I.Takahashi, S.Joonwichien, S.Matsushima, Y.Hoshi, K.Hara

    Eleventh International Conference on Flow Dynamics 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  673. Contact angles of adjacent dendrite crystals to form grain boundary and iron precipitation in multicrystalline silicon ingot grown by floating cast method International conference

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  674. Optical properties for solar cell structures by coupling Ge quantum dot multilayers with textureed substrates International conference

    Y.Hoshi, T.Tayagaki, O.Aonuma, N.Usami

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  675. Investigation of Light Trapping in Large-Scale Photonic Nanostructures Fabricated from Vertically Aligned Germanium Quantum Dots on Crystalline Silicon International conference

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  676. Impact of Ge/Si heterostructures to Open-Circuit Voltage in Ge/Si Quantum Dot Solar Cells International conference

    T.Tayagaki, Y.Hoshi, N.Usami

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  677. Fabrication of BaSi2 thin films with long carrier lifetime for thin-film solar cell applications by vacuum evaporation International conference

    K.O.Hara, Y.Nakagawa, N.Usami

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  678. Selective Growth of Vertical Silicon Nanowires Array Using Anodic Aluminum Oxide Template International conference

    V.H.NGUYEN, S.TUTASHKONKO, Y.HOSHI, N.USAMI

    29th European PV Solar Energy Conference and Exhibition 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  679. シリコン補給層を利用したガラス基板上BaSi2単相蒸着膜の厚膜化

    原 康祐,中川 慶彦,末益 崇,宇佐美 徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  680. Additional Low Temperature Multiple Cycles of Annealing and Cooling after Phosphorus Diffusion to Improve Lifetime in Multicrystalline Silicon

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  681. 実用サイズSiインゴットにおける デンドライト成長を利用した多結晶組織制御

    高橋勲,平松巧也, 松島悟, 宇佐美徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  682. 真空蒸着法で作製したBaSi2薄膜のキャリアライフタイムの評価

    中川 慶彦,原 康祐,末益 崇,宇佐美 徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  683. Siテクスチャ基板を用いたGeドット成長とその太陽電池応用

    星裕介、青沼理、太野垣健、宇佐美徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  684. 顕微PLイメージングによるSi結晶中粒界の電気的特性評価

    二宮駿也,沓掛健太朗,出浦桃子,大野裕,宇佐美徳隆,米永一郎

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  685. 金属誘起層交換成長による非晶質基板上Ge薄膜の結晶方位制御

    都甲薫,中沢宏紀,大谷直生,宇佐美徳隆,末益崇

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  686. Al誘起成長によるSi薄膜をテンプレートとしたSi薄膜の固相成長

    筋原 康博,高橋 勲,宇佐美 徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  687. MBE法によるGe(111)基板上のBaSi2エピタキシャル膜の作製と評価

    髙部涼太,馬場正和,Weijie Du,都甲薫,原康祐,宇佐美徳隆,末益崇

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  688. 結晶成長温度の変化によるフォトニックナノ構造の形状制御と光学特性

    青沼 理、星 裕介、太野垣 健、A.Novikov、D.Yurasov、宇佐美 徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  689. Siバルク多結晶の結晶組織制御に向けた炉内温度分布計算

    平松巧也、高橋勲、松島悟、宇佐美徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  690. 表面フォトニックナノ構造における光透過特性と光閉じ込め効果

    太野垣健、岸本祐子、星裕介、宇佐美徳隆

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  691. 歪み Si/Si 1-xCx/Si(001)構造 の不純物活性化過程における結晶性及び電気特性評価

    藤原幸亮 , 酒井翔一朗, 古川洋志, 井上樹範, 有元圭介, 山中淳二, 中川清和, 宇佐美徳隆, 星裕介, 澤野憲太郎

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  692. 伸張歪みSi/緩和SiGe/Si(110)の微細構造および電気的特性への熱処理の影響

    宇津山直人,有元圭介,山中淳二, 中川清和,宇佐美徳隆,澤野憲太郎

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  693. イオン注入法で作製した圧縮歪み Si/Si 1-xCx/Si(001)構造の結晶性及びデバイス特性評価

    中込諒, 酒井翔一朗, 藤原幸亮, 古川洋志,有元圭介, 山中淳二, 中川清和, 宇佐美徳隆, 星裕介, 澤野憲太郎

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  694. Enhanced Light Absorption in Ge/Si Quantum Dot Solar Cells by Surface Photonic Nanostructures International conference

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    SSDM2014 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  695. Photonic nanostructures coupled with vertically aligned quantum dots for solar cell applications International conference

    N.Usami

    The 6th IEEE International Nanoelectronics Conference 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  696. Evaluation of potential variation aroung grain boundaries in BaSi2 on poly-crystalline Si substrates International conference

    M.Baba, W.Du, R.Takabe, K.Toko, K.Watanabe, T.Sekiguchi, K.O.Hara, N.Usami, T.Suemasu

    The 6th IEEE International Nanoelectronics Conference 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  697. Arsenic doping into BaSi2 semiconductor films by ion implantation and thermal annealing International conference

    K.O.Hara, N.Usami, M.Baba, K.Toko, T.Suemasu

    The 6th IEEE International Nanoelectronics Conference 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  698. A proposal for advanced photon management in solar cells by photonic nanostructures coupled with textured substrates International conference

    Y.Hoshi, T.Tayagaki, O.Aonuma, N.Usami

    Grand Renewable Energy 2014 international conference 

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    Event date: 2014.7 - 2014.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  699. Investigation of the open-circuit voltage and carrier extraction in Ge/Si quantum dot solar cells International conference

    T.Tayagaki, Y.Hoshi, N.Usami

    Grand Renewable Energy 2014 international conference 

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    Event date: 2014.7 - 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  700. Si融液に濡れない膜の製膜とその応用 International conference

    水野 千尋, 大久保 智昭, 小松 隆一, 高橋 勲, 宇佐美 徳隆

    2014年度 応用物理・物理系学会中国四国支部合同学術講演会 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:松江   Country:Japan  

  701. Realization of Single-Phase BaSi2 Films by Vacuum Evaporation with Appropriate Optical Properties for Solar Cell Applications International conference

    K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  702. Effect of substrate thickness on Al-induced-crystallized Ge thin films on flexible polyimide substrates International conference

    N.Oya, K.Toko, N.Usami, T.Suemasu

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  703. Investigation on the J-V characteristics of BaSi2 Schottky junctions with different metal electrodes International conference

    W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  704. Crystal growth of undoped and impurity doped BaSi2 films on poly-crystalline Si International conference

    M.Baba, K.O.Hara, D.Tsukahara, K.Toko, N.Usami, T.Suemasu

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  705. Investigation of surface potential distributions of impurity-doped n-BaSi2 thin-films by Kelvin probe force microscopy International conference

    D.Tsukahara, M.Baba, R.Takabe, K.Toko, K.O.Hara, N.Usami, K.Watanabe, T.Sekiguchi, T.Suemasu

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  706. Effect of grain areas on minority-carrier lifetime in undoped n-BaSi2 on Si(111) International conference

    R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu

    International conference and summer school on advanced silicide technology 2014 

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  707. Ge量子ドットフォトニックナノ構造を用いた高効率化技術の開発

    太野垣健、星裕介、岸本祐子、宇佐美徳隆

    第11回次世代の太陽光発電シンポジウム 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:宮崎   Country:Japan  

  708. 浮遊キャスト成長法によるデンドライト組織制御に向けた炉内温度分布の検討

    高橋勲、Supawan Joonwichien、平松巧也、松島悟、宇佐美徳隆

    第11回次世代の太陽光発電シンポジウム 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎   Country:Japan  

  709. Fast formation of poly-Si thin films with 200um+ grains by Aluminum-Induced Crystallization with a temperature profiling

    S.Tutashkonko, V.H.Nguyen, N.Usami

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  710. Selective Growth of Epitaxial Si Nanowire Array Embedded by Anodic Aluminum Oxide Template

    V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  711. 高空間分解能測定によるSi結晶のPL強度と転 位密度の相関解明

    二宮俊也、沓掛健太朗、出浦桃子、大野裕、宇佐美徳隆、米永一郎

    第11回次世代の太陽光発電シンポジウム 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:宮崎   Country:Japan  

  712. Relationship between growth direction of dendrite crystals and microstructures of multicrystalline silicon ingot grown by floating cast method

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

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    Event date: 2014.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  713. Improvement of Annealing Procedure to Suppress Defect Generation during Impurity Gettering in Multicrystalline Silicon for Solar Cells International conference

    I.Takahashi, S.Joonwichien, K.Kutsukake, S.Matsushima, I.Yonenaga, N.Usami

    The 40th IEEE Photovoltaic Specialists Conference 

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    Event date: 2014.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  714. Light trapping in large-scale photonic nanostructures fabricated from vertically aligned Ge quantum dots on Si International conference

    T.Tayagaki, Y.Hoshi, Y.Kishimoto, N.Usami

    The 40th IEEE Photovoltaic Specialists Conference 

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    Event date: 2014.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  715. Investigation of the cause of reduced open circuit voltage in Ge/Si quantum dot solar cells International conference

    T.Tayagaki, Y.Hoshi, N.Usami

    The 40th IEEE Photovoltaic Specialists Conference 

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    Event date: 2014.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  716. ナノ構造体・結晶シリコン融合太陽電池 International conference

    宇佐美 徳隆

    東北大学産学コンソーシアム年度末報告会 

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    Event date: 2014.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学流体科学研究所   Country:Japan  

  717. Enhanced Phosphorus Gettering of Impurities in Multicrystalline Silicon at Low Temperature International conference

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    SiliconPV 2014, the 4th International Conference on Silicon Photovoltaics 

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    Event date: 2014.3

    Language:English   Presentation type:Poster presentation  

    Country:Netherlands  

  718. MOVPE成長 -c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制

    正直 花奈子, 崔 正焄, 岩渕 拓也, 宇佐美 徳隆, 谷川 智之, 窪谷 茂幸, 花田 貴, 片山 竜二, 松岡 隆志

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  719. 逆 AIC 法を用いた多結晶 Ge/Al/ガラス構造の形成と拡散制御層効果

    中沢宏紀, 都甲薫, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  720. プラスチック基板上における非晶質Ge薄膜のAl誘起成長法

    大谷直生, 都甲薫, 沼田諒平, 中沢宏紀, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  721. 「講演奨励賞受賞記念講演」(15分)Al 誘起層交換成長法によるGe 結晶薄膜/絶縁基板の極低温形成

    沼田諒平, 都甲薫, 大谷直生, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  722. Effect of Vertical Miniband on the Photovoltaic Performance of a Solar Cell with Quantum Dot Superlattice Fabricated by Using Bio-Template and Neutral Beam Etching Technology

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  723. イオン注入法がSi1-XCX/Si(001)構造の欠陥形成過程に及ぼす効果

    中込諒, 酒井翔一朗, 藤原幸亮, 古川洋志, 有元圭介, 山中淳二, 中川清和, 宇佐美徳隆, 星裕介, 澤野憲太郎

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  724. 不純物イオン注入および熱処理がSi1-xCx層の結晶性に及ぼす影響

    藤原幸亮, 酒井翔一朗, 古川洋志, 井上樹範, 有元圭介, 山中淳二, 中川清和, 宇佐美徳隆, 星裕介, 澤野憲太郎

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  725. 圧縮歪みSi/Si1-XCX/Si(100)ヘテロ構造における 炭素傾斜組成の電気伝導特性への効果

    酒井翔一朗, 古川洋志, 有元圭介, 山中淳二, 中川清和, 宇佐美徳隆, 星裕介, 澤野憲太郎

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  726. フォトニック・テクスチャダブル構造を利用した太陽電池の作製

    星裕介, 青沼理, 太野垣健, 宇佐美徳隆

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  727. A Simple Alternative of Barrier Layer Removal of Nanoporous Alumina Template on Silicon Substrate

    H.V.Nguyen, Y.Hoshi, N.Usami

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  728. 真空蒸着法によるガラス基板上へのBaSi2薄膜の作製と評価

    原康祐, 中川慶彦, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  729. 真空蒸着法によるSi基板上へのBaSi2薄膜の作製

    中川慶彦, 原康祐, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  730. I-V and C-V characteristics of the metal/undoped-BaSi2 Schottky diodes

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  731. アンドープn型BaSi2エピタキシャル膜少数キャリア寿命の結晶粒径依存

    高部涼太, 原康祐, 馬場正和, WeijieDu, 都甲薫, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  732. KFM法によるSb-doped BaSi2薄膜表面の粒界ポテンシャル評価

    塚原大地, 馬場正和, 髙部涼太, 都甲薫, 渡辺健太郎, 原康介, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  733. KFM 法によるB 添加p 型BaSi2 エピタキシャル薄膜表面のポテンシャル分布

    馬場正和, 塚原大地, WeijieDu, 都甲薫, 渡辺健太郎, 原康介, 宇佐美徳隆, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  734. BaSi2エピタキシャル薄膜へのAsイオン注入と高温アニール

    原康祐, 宇佐美徳隆, 馬場正和, 都甲薫, 末益崇

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  735. 熱処理条件の違いによる多結晶Si中の欠陥と不純物への影響

    高橋勲, S.Joonwichien, 松島悟, 宇佐美徳隆

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  736. シリコン結晶におけるPL強度と転位密度の相関

    二宮駿也, 沓掛健太朗, 大野裕, 出浦桃子, 宇佐美徳隆, 米永一郎

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  737. Ge量子ドット積層フォトニックナノ構造を用いた光キャリア生成増大

    太野垣健, 星裕介, 岸本裕子, 宇佐美徳隆

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  738. 次世代太陽電池用シリコン系マルチスケール結晶

    宇佐美 徳隆

    戦略的研究基盤形成支援事業成果報告会シンポジウム 

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    Event date: 2014.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  739. Crystalline Si solar cells from crystal growth to the market International conference

    N.Usami

    The 2nd Malaysia-Japan Joint Workshop on Compound Solar Cells and Systems 

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Malaysia  

  740. Integration of nanostructures in crystalline silicon solar cells International conference

    N.Usami

    Tenth International Conference on Flow Dynamics (ICFD2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  741. Floating cast method as a growth technique to realize high-quality multicrystalline silicon ingot for solar cells International conference

    N.Usami

    Global Photovoltaic Conference 2013 (GPVC 2013) & Aseanian Conference on Dye-sensitized & Organic Solar Cells (DSC-OPV8) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  742. 浮遊キャスト成長法による多結晶組織制御と応力制御による欠陥発生抑制

    高橋 勲,Supawan Joonwichien, 沓掛 健太朗, 宇佐美 徳隆

    2013年度東北大学金属材料研究所ワークショップ 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  743. ナノ構造体・結晶シリコン融合太陽電池

    宇佐美 徳隆

    第5回薄膜太陽電池セミナー2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  744. ナノ構造体・結晶シリコン融合構造の作製とその太陽電池特性

    星 裕介、太野垣 健、木口 賢紀、宇佐美 徳隆

    第5回薄膜太陽電池セミナー2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  745. pn接合太陽電池における電荷分離の駆動力と開放電圧

    原 康祐, 宇佐美 徳隆

    第5回薄膜太陽電池セミナー2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  746. Floating cast method for growing high-quality multicrystalline silicon ingot: effect of non-uniform removal Si melt on conversion efficiencies

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

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    Event date: 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  747. Influence of the micro-patterned ZnO layer on the growth of polycrystalline-Si layer by aluminum-induced layer exchange process International conference

    Wonbeom Chang, Sungkuk Choi, Soohoon Jung, Jinyeop Yoo, Jeungwoo Lee, Kosuke Hara, Haruna Watanabe, Noritaka Usami, and Jiho Chang

    The 2nd International Conference on Advanced Electromaterials (ICAE2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  748. Pore Modulation of Anodic Aluminum Oxide on Silicon Substrate at Room Temperature as a Template for Silicon Nanowires International conference

    V.H.Nguyen, Y.Hoshi, and N.Usam

    the 23rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:Taiwan, Province of China  

  749. Investigation of the open circuit voltage in c-Si solar cells with Ge/Si heterostructures International conference

    T.Tayagaki, Y.Hoshi, N.Usami

    the 23rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  750. Control of dendritic structure to suppress dislocation generation during crystal growth in a large-scale ingot International conference

    I. Takahashi, S. Joonwichien, S. Matsushima, and N. Usami

    the 23rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:Taiwan, Province of China  

  751. Large-scale implementation of floating cast method to grow high-quality multicrystalline silicon ingot International conference

    N.Usami, S.Matsushima, S.Joonwichien, and I.Takahashi

    7th International Workshop on Crystalline Silicon Solar Cells (CSSC7) 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  752. Growth of a 70kg mono-like silicon ingot with functional grain International conference

    K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga

    7th International Workshop on Crystalline Silicon Solar Cells (CSSC7) 

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    Event date: 2013.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  753. Relationship between dendritic structure and dislocation generation in a large-scale multicrystalline Silicon ingot grown by floating cast method International conference

    I.Takahashi, S.Joonwichien, S.Matsushima and N.Usami

    7th International Workshop on Crystalline Silicon Solar Cells (CSSC7) 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  754. Towards implementation of floating cast method for growing large-scale high-quality multicryalline Si ingot using designed double crucibles International conference

    S.Joonwichien , S.Matsushima , H.Watanabe, N.Usami

    28th European PV Solar Energy Conference and Exhibition 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  755. Optical properties of photonic nanostructures coupled with Ge quantum dots formed by maskless wet etching process International conference

    Y.Hoshi, K.Ooi, T.Tayagaki, T.Kiguchi, N.Usami

    28th European PV Solar Energy Conference and Exhibition 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Poster presentation  

    Country:France  

  756. PLイメージングによるモノライクSi中の転位分布の評価

    二宮駿也,沓掛健太朗, 大野裕, 徳本有紀, 宇佐美徳隆, 米永一郎

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  757. Large-grained Al-induced crystallized Ge thin films for developing tandem solar cells on glass substrates International conference

    K.Toko, K.Nakazawa, R.Numata, N.Usami, T.Suemasu

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  758. Tunneling Properties of Heavily Doped BaSi2/Si Hetero-junctions in Different Structures for BaSi2 Solar Cells on Si Surfaces International conference

    W.Du, M.Baba, R.Takabe, K.Toko, N.Usami, T.Suemasu

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  759. Potential barrier height at grain boundaries in BaSi2 epitaxial thin films studied by Kelvin probe force microscopy International conference

    M.Baba, S.Tsurekawa, W.Du, K.Toko, K.O.Hara, N.Usami, T.Suemasu

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  760. Investigation of the causes of reduced open circuit voltage in quantum dot solar cells International conference

    T.Tayagaki, Y.Hoshi, N.Usami

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  761. Fabrication of defect-free sub-20-nm germanium nanodisk structure using bio-template and neutral beam etching International conference

    M.E.Fauzi, T.Okada, M.M.Rahman, Y.Hoshi, K.Sawano, I.Yamashita, N.Usami, and S.Samukawa

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  762. Effect of geometry in photonic nanostructures coupled with Ge quantum dots on optical properties International conference

    Y.Hoshi, K.Ooi, T.Tayagaki, T.Kiguchi, and N.Usami

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  763. On the Origin of Drastic Enhancement of Excess-Carrier Lifetime by Annealing BaSi2 Epitaxial Films International conference

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko and T.Suemasu

    2013 JSAP-MRS Joint Symposia 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  764. 厚さ1.5 μmを超えるBaSi2膜のSi(111)基板上へのMBE成長

    髙部涼太,中村航太郎,馬場正和,Weijie Du,Muhammad Ajmal Khan,都甲薫,笹瀬雅人,原康祐,宇佐美徳隆,末益崇

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  765. Formation and Characterization of a Three Dimensional Silicon Quantum Dot Superlattice Fabricated by Top-Down Process Using Bio-Template and Neutral Beam Etching Technology for its Application to a High Efficiency Quantum Dot Solar Cell

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  766. 圧縮歪みSi/Si1-XCX/Si(100)ヘテロ構造における結晶欠陥形成過程の研究

    酒井翔一朗,古川洋志,有元圭介,山中淳二,中川清和,宇佐美徳隆,星裕介,澤野憲太郎,白木靖寛

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  767. Al 誘起成長Si 層の結晶方位・粒径に与える成長温度効果

    沼田諒平,都甲薫,宇佐美徳隆,末益崇

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  768. 絶縁基板上における大粒径Ge(111)薄膜の極低温(200˚C)Al誘起成長

    沼田諒平,都甲薫,大谷直生,宇佐美徳隆,末益崇

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  769. 導電膜/ガラス上における非晶質 Ge 薄膜の Al 誘起成長

    中沢宏紀,都甲薫,宇佐美徳隆,末益崇

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  770. Control of microstructures and reduction of stress in multicrystalline Si ingot grown by floating cast method using designed double crucibles

    S.Joonwichien, S.Matsushima , I.Takahashi, N.Usami

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  771. 浮遊キャスト成長法により作製した大型インゴットの粒界性格と転位発生の関係

    高橋勲,Supawan Joonwichien, 松島悟, 宇佐美徳隆

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  772. 機能性粒界を利用した70kgモノライクSiインゴットの成長

    沓掛 健太朗,宇佐美 徳隆,大野 裕,徳本 有紀,米永 一郎

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  773. Control of grain boundaries and its impact on materials properties in International conference

    N.Usami

    10th Topical Workshop on Heterostructure Microelectronics 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  774. 次世代太陽電池創製に向けたマルチスケールシリコン系結晶

    宇佐美 徳隆、太野垣 健、星 裕介、高橋 勲、Supawan Joonwichien

    応用物理学会シリコンテクノロジー分科会研究集会 「最先端エネルギーナノデバイス」 

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    Event date: 2013.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:産業技術総合研究所   Country:Japan  

  775. Fabrication of large-area photonic nanostructuers coupled with Ge quantum dots and their appilcation to solar cells International conference

    Noritaka Usami, Yusuke Hoshi, Takanori Kiguchi, Kazufumi Ooi, and Takeshi

    17th International Conference on Crystal Growth and Epitaxy ICCGE-17 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  776. Mechanism of Strain Relaxation in BaSi2 Epitaxial Films on Si(111) Substrates during Post-Growth Annealing and Application for Film Exfoliation International conference

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, and T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  777. Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates International conference

    M.Baba, K.O.Hara, N.Saito, N.Yoshizawa, N.Usami, K.Toko, and T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  778. Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates International conference

    K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  779. Investigation on the Surface Morphologies and Tunneling Properties of BaSi2/Si hetero-junction for BaSi2 International conference

    W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  780. Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization International conference

    R.Numata, K.Toko, N.Usami, T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  781. Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy International conference

    R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, and T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  782. Al-induced crystallized Si and Ge thin films on insulators as epitaxial seeds for silicide International conference

    K.Toko, K.Nakazawa, R.Numata, N.Usami, T.Suemasu

    the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  783. Landau level crossing and anti-crossing in Ge/SiGe bilayer two-dimensional hole systems International conference

    R.Moriya, Y.Hoshi, Y.Inoue, S.Masubuchi, K.Sawano, N.Usami, Y.Shiraki, T.Machida

    Symposium on Quantum Hall Effects and Related Topics 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  784. Grain boundary engineering for mono-like Si International conference

    K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  785. Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots International conference

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  786. Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications International conference

    W.Hu, M.E.Syazwan, M.Igarashi, A.Higo, M.Y.Lee, Y.M.Li, N.Usami, and S. Samukawa

    39th IEEE Photovoltaic Specialist Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  787. High photo-current generation in a three-dimensional silicon quantum dot superlattice fabricated by combination of bio-template and neutral beam etching for quantum dot solar cell International conference

    M.M.Rahman, M.Igarashi, W.Hu, M.E.Syazwan, Y.Hoshi, N.Usami, S.Samukawa

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  788. Enhanced p-type conductivity and band gap narrowing in heavily B-doped p-BaSi2 films grown by molecular beam epitaxy International conference

    M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K. Toko, N. Usami, and T. Suemasu

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  789. Characterization of grain boundary properties in BaSi2 epitaxial films on Si(111) and Si(001) by Kelvin probe force microscopy International conference

    M.Baba, S.Tsurekawa, K.Nakamura, W.Du, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  790. Growth of vertical silicon nanowires array using electrochemical alternative International conference

    V.H.Nguyen, H.Watanabe, Y.Hoshi, N.Usami

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  791. Improvement of excess-carrier lifetime in BaSi2 epitaxial films by post-growth annealing International conference

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  792. Vertically Epitaxial Silicon Nanowire Growth

    V.H.Nguyen, H.Watanabe, Y.Hoshi, T.Kiguchi, T.Konno, S.Samukawa,N.Usami

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  793. N-type Doping of BaSi2 Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing International conference

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  794. Carrier Extraction from Ge Quantum Dots in Si Solar Cells International conference

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  795. Large-Grained Oriented Polycrystalline Si/Al/SiO2 Structures Formed by Al-Induced Layer Exchange Process International conference

    R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  796. Growth Promotion of Al-Induced Crystallized Ge Thin-Films on Insulators by Enhancing Ge-Supply into Al Layers International conference

    K.Toko, R.Numata, K.Nakazawa, N.Usami, T.Suemasu

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  797. Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties International conference

    Y.Hoshi, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  798. Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties International conference

    Y.Hoshi, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami

    The 8th International Conference on Silicon Epitaxy and Heterostructures  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  799. Carrier Extraction from Ge Quantum Dots in Si Solar Cells International conference

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    The 8th International Conference on Silicon Epitaxy and Heterostructures  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  800. Large-Grained Oriented Polycrystalline Si/Al/SiO2 Structures Formed by Al-Induced Layer Exchange Process International conference

    R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    The 8th International Conference on Silicon Epitaxy and Heterostructures 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  801. Growth Promotion of Al-Induced Crystallized Ge Thin-Films on Insulators by Enhancing Ge-Supply into Al Layers International conference

    K.Toko, R.Numata, K.Nakazawa, N.Usami, T.Suemasu

    The 8th International Conference on Silicon Epitaxy and Heterostructures 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  802. Impurity precipitation at crystal defects in multicrystalline Si: Effects of grain boundary characters and dislocation decoration on electrical properties

    S.Joonwichien, N.Usami

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    Event date: 2013.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  803. ナノ構造体・結晶シリコン融合構造の作製とその太陽電池特性

    星 裕介、大井 万史、太野垣 健、木口 賢紀、宇佐美 徳隆

    次世代の太陽光発電システム第175委員会 第10回「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2013.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  804. BaSi2エピタキシャル薄膜の成長後アニールによる余剰キャリア寿命の増大

    原 康祐, 宇佐美 徳隆, 中村 航太郎, 高部 涼太, 馬場 正和, 都甲 薫, 末益 崇

    次世代の太陽光発電システム第175委員会 第10回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2013.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  805. 太陽電池用マルチスケールシリコン系結晶

    宇佐美 徳隆

    独立行政法人日本学術振興会結晶成長の科学と技術第161委員会 第81回研究会 「太陽電池用結晶の新展開」 

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    Event date: 2013.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:仙台   Country:Japan  

  806. ナノ構造を利用したシリコン系高効率太陽電池

    宇佐美 徳隆

    第一回未到エネルギー研究センター・セミナー 産学連携イノベーション促進事業 「垂直統合型技術結集と新しい産学連携システムによる最先端電気基盤技術の創出」 

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    Event date: 2013.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学   Country:Japan  

  807. Ge量子ドット積層フォトニックナノ構造を用いた光キャリア生成増大

    太野垣健, 星裕介, 岸本裕子, 宇佐美徳隆

    第61回応用物理学会春季学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 25

  1. 多結晶材料情報学による一般粒界物性理論の 確立とスマートシリコンインゴットの創製

    2017.10 - 2024.3

    科学技術振興機構 戦略的創造研究推進事業 CREST 

    宇佐美 徳隆

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    Grant type:Competitive

  2. オンシリコン多接合太陽電池の研究開発

    2023.5

    エネルギー・環境新技術先導研究プログラム 

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    Authorship:Principal investigator 

  3. セキュアでユビキタスな資源・エネルギー共創拠点

    2022.10

    科学技術振興機構  共創の場形成支援プログラム 

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    Authorship:Coinvestigator(s) 

  4. 非対称傾角粒界の未踏構造空間の実現と機械学習に よる特性評価を利用した粒界設計指導原理の構築

    2022.10 - 2023.9

    三菱財団  自然科学研究助成 

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    Grant amount:\7000000

  5. 実験、計算科学、機械学習の融合による高品質多結晶シリコンの成長プロセスの開発 International coauthorship

    Grant number:120217706  2021.6 - 2023.5

    日本学術振興会  二国間交流事業 

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    Authorship:Principal investigator  Grant type:Competitive

  6. 機械学習を用いた粉体分級のシミュレーター

    2021.4 - 2022.3

    国内共同研究 

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    Authorship:Principal investigator  Grant type:Collaborative (industry/university)

  7. Alペーストを利用した半導体のエピタキシャル成長

    2021.2

    国内共同研究 

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    Grant type:Collaborative (industry/university)

  8. 超高効率多段接合モジュール開発

    2020.7

    NEDO  太陽光発電主力電源化推進技術開発 

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    Grant type:Competitive

  9. 低コスト・高耐久太陽電池の国際共同研究開発 International coauthorship

    2020.7 - 2023.11

    NEDO  クリーンエネルギー分野における革新的技術の国際共同研究開発事業 

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    Grant type:Competitive

  10. シリコン量子ビットによる量子計算機向け大規模集積回路の実現

    2018.11 - 2023.3

    文部科学省  光・量子フラッグシッププログラム 

    森 貴洋

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    Grant type:Competitive

  11. 極薄シリコンウェーハを利用した高効率フレキシブル太陽電池の基盤技術に関する研究

    2018.4 - 2020.3

    日本学術振興会ロシアとの共同研究 

    宇佐美 徳隆

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    Grant type:Competitive

  12. 太陽電池用Siウェハ品質測定装置の開発に関する研究

    2018.1

    国内共同研究 

  13. Photon management in silicon-based solar cells by photonic nanostructures coupl ed with quantum dots

    2016.4 - 2018.3

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    Grant type:Competitive

  14. 表面改質による核生成制御を利用した太陽電池用高品質シリコン多結晶インゴットの低コスト製造技術

    2015.10 - 2016.9

    科学技術振興機構  マッチングプランナープログラム 探索試験 

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    Grant type:Competitive

  15. 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発

    2015.6 - 2020.2

    NEDO高性能・高信頼性太陽光発電の発電コスト低減技術開発 

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    Grant type:Competitive

  16. シリコンインゴット成長用離型剤に関する研究

    2015.4 - 2016.3

  17. 高効率で低コストな多結晶シリコンウェハプロセスの一貫した開発

    2012.10 - 2015.3

    科学技術振興機構 復興促進プログラム 

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    Grant type:Competitive

  18. 薄膜ナノワイヤー形成技術開発

    2012.7 - 2016.3

    科学技術振興機構 革新的エネルギー研究開発拠点形成事業「ナノワイヤー太陽電池」 

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    Grant type:Competitive

  19. 光とキャリアを完全利用するナノ構造体・結晶シリコン融合太陽電池

    2011.10 - 2017.3

    科学技術振興機構戦略的創造研究 先端的低炭素化技術開発 

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    Grant type:Competitive

  20. 超薄板太陽電池用シリコン基板の直接連続生産技術(「ガスフロート法」)の開発

    2011.10 - 2013.3

    NEDO新エネルギーベンチャー技術革新事業(太陽光発電) 

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    Grant type:Competitive

  21. ナノドットを利用した高効率結晶シリコン系太陽電池

    2011.8 - 2012.3

    科学技術振興機構研究シーズ探索プログラム 

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    Grant type:Competitive

  22. シリサイド半導体pn接合によるSiベース薄膜結晶太陽電池

    2010.10 - 2016.3

    科学技術振興機構戦略的創造研究CREST「太陽光を利用した独創的クリーンエネルギー生成技術の創出」 

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    Grant type:Competitive

  23. 浮遊キャスト成長法による高品質Si多結晶インゴット成長技術

    2010.7 - 2015.3

    NEDO太陽エネルギー技術研究開発/太陽光発電システム次世代高性能技術の開発 

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    Grant type:Competitive

  24. シリサイド半導体の物性調査

    2009.10 - 2010.3

    科学技術振興機構戦略的創造研究CREST「太陽光を利用した独創的クリーンエネルギー生成技術の創出」特定課題調査研究 

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    Grant type:Competitive

  25. 混晶半導体のグローバル成長制御による高機能ナノ材料の創製

    2001.10 - 2006.3

    NEDO産業技術研究事業費助成金 

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    Grant type:Competitive

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KAKENHI (Grants-in-Aid for Scientific Research) 33

  1. データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用

    Grant number:23H01440  2023.4 - 2026.3

    科学研究費助成事業  基盤研究(B)

    鵜殿 治彦, 宇佐美 徳隆, 高倉 健一郎

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    Authorship:Coinvestigator(s) 

    データ駆動科学の活用によって材料やデバイス製造のプロセスを適正化し、実験コストを最小限に抑えて実用材料やデバイスを短期間で実現する動きが広がっている。本研究は、この手法を取り入れて直径2インチ以上の大型のマグネシウムシリサイド(Mg2Si)基板結晶を開発し、Mg2Siの熱光発電セル応用の可能性を探る研究である。
    地殻中資源量が豊富で毒性の無い元素で構成されるMg2Siは、資源・環境リスクが低く大量使用に適した半導体である。禁制帯幅が0.61eVで、熱的にも安定な為、熱源からの赤外輻射光で発電する熱光発電セルとして利用できれば、蓄熱源などを利用した大規模電源の実用化につながる。

  2. Challenge to improve the efficiency of a droplet-based electricity generator by controlling the surface and interface and its application to solar cells that generate electricity even in the rain

    Grant number:22K18807  2022.6 - 2024.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

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    Authorship:Principal investigator 

    Grant amount:\6370000 ( Direct Cost: \4900000 、 Indirect Cost:\1470000 )

  3. Challenge to the realization of dopant-free flexible solar cells that expand the application area of photovoltaics

    Grant number:20K20998  2020.7 - 2022.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

    Usami Noritaka

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    Authorship:Principal investigator 

    Grant amount:\5590000 ( Direct Cost: \4300000 、 Indirect Cost:\1290000 )

    We developed fundamental processes to realize dopant-free flexible solar cells with metal/titanium oxide/crystalline silicon heterojunctions with high passivation and low resistance. Specifically, the process includes pre-oxidation treatment of crystalline silicon, formation of titanium oxide thin film by atomic layer deposition, the introduction of a titanium nitride intermediate layer on the titanium oxide thin film, and deposition of a metal thin film. In addition, as a formation technology of light-trapping nanotextures on the ultra-thin silicon substrates that exhibit flexibility, we have devised a simple solution process that only requires adding a solution to form metal nanoparticles on the surface of crystalline silicon and surfactant in the conventional alkaline solution.

  4. Creation of functional metastable silicon-based multiple element materials by controlling light elements

    Grant number:20H00303  2020.4 - 2024.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Principal investigator 

    Grant amount:\46150000 ( Direct Cost: \35500000 、 Indirect Cost:\10650000 )

  5. HYDROGENOMICS: Creation of Innovative Materials, Devices, and Reaction Processes using Higher-Order Hydrogen Functions

    Grant number:18H05514  2018.6 - 2023.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

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    Authorship:Coinvestigator(s) 

  6. Selective area growth of GaN on glass using an AIC seed layer for micro-LED applications

    Grant number:17F17366  2017.11 - 2020.3

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    Authorship:Other 

  7. Research on carrier selective contact materials for monocrystalline silicon solar cells

    Grant number:17F17723  2017.4 - 2019.3

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    Authorship:Other 

  8. 太陽電池用高品質シリコン多結晶インゴット成長技術の開発

    2014.11 - 2016.10

    科学研究費補助金 

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    Authorship:Principal investigator 

  9. シリコン融液表面の放射冷却による薄板状結晶成長とガスフロートへの挑戦

    2013.4 - 2015.3

    科学研究費補助金  挑戦的萌芽研究

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    Authorship:Principal investigator 

  10. イオン注入による欠陥制御を利用した圧縮歪みシリコンの実現と高正孔移動度素子応用

    2012.4 - 2015.3

    科学研究費補助金  基盤研究(B)

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    Authorship:Principal investigator 

  11. シリコン多結晶の微細組織制御と高効率薄膜太陽電池への応用

    2010.4 - 2012.3

    科学研究費補助金 

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    Authorship:Principal investigator 

  12. 融液中に浮遊させたSi結晶の成長メカニズムの研究と高品質Si多結晶の成長技術開発

    2008.4 - 2011.3

    科学研究費補助金  基盤研究(S)

    中嶋一雄

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    Authorship:Coinvestigator(s) 

  13. 局所領域三次元原子構造解析のための電子線励起X線ホログラフィーの開発

    2006.4 - 2010.3

    科学研究費補助金  基盤研究(B)

    林好一

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    Authorship:Coinvestigator(s) 

  14. バルク多結晶組織アーキテクチュアに向けた結晶成長技術開発と高効率太陽電池への応用

    2006.4 - 2009.3

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

  15. ゲルマニウム結晶ウェハーの高温加圧加工によるX線用モノクロメーター結晶の研究

    2006.4 - 2007.3

    科学研究費補助金 

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    Authorship:Coinvestigator(s) 

  16. 絶縁体上SiGe仮想基板の形成機構の解明と高機能電子デバイスへの応用

    2003.4 - 2005.3

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

  17. SiGe基板単結晶の低欠陥化と歪みを制御した機能性ヘテロ構造の創製

    2002.4 - 2007.3

    科学研究費補助金  基盤研究(S)

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    Authorship:Coinvestigator(s) 

  18. 量子ドットによる歪み誘起バンドギャップ変化を利用した太陽電池用材料の創製

    2002.4 - 2003.3

    科学研究費補助金  特定領域研究

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    Authorship:Principal investigator 

  19. SiGe混晶基板を利用した歪み制御Si系高機能電子デバイスに関する研究

    2001.4 - 2003.3

    科学研究費補助金  基盤研究(B)

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    Authorship:Principal investigator 

  20. 過冷却度を制御した融液成長法による太陽電池用Si多結晶の大粒径化と高効率化

    2001.4 - 2003.3

    科学研究費補助金  基盤研究(A)

    中嶋一雄

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    Authorship:Coinvestigator(s) 

  21. シリコン系混晶半導体のグローバル成長制御

    2001.4 - 2002.3

    科学研究費補助金  特定領域研究

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    Authorship:Principal investigator 

  22. 人工IV族半導体の形成と光・電子物性制御

    1999.4 - 2004.3

    科学研究費補助金  特定領域研究

    白木靖寛

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    Authorship:Coinvestigator(s) 

  23. III-V-N型窒化物系混晶半導体の巨大ボウイング効果と物性応用

    1999.4 - 2003.3

    科学研究費補助金  基盤研究(B)

    尾鍋研太郎

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    Authorship:Coinvestigator(s) 

  24. 不均一歪み場制御による無フォノン励起子発光増大に関する研究

    1999.4 - 2002.3

    科学研究費補助金  基盤研究(B)

    白木靖寛

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    Authorship:Coinvestigator(s) 

  25. 極微プローブ光を用いた半導体微細構造の空間および時間分解分光に関する研究

    1999.4 - 2001.3

    科学研究費補助金  基盤研究(C)

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    Authorship:Principal investigator 

  26. 溶質元素補給ゾーン成長法による均一組成を持った多元系バルク単結晶の開発

    1999.4 - 2001.3

    科学研究費補助金  基盤研究(A)

    中嶋一雄

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    Authorship:Coinvestigator(s) 

  27. 半導体量子ドットの構造制御と新機能素子への応用に関する研究

    1997.4 - 1999.3

    科学研究費補助金  奨励研究(A)

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    Authorship:Principal investigator 

  28. 機能性IV族半導体超構造の結晶成長と高機能集積回路への応用に関する研究

    1997.4 - 1999.3

    科学研究費補助金  基盤研究(A)

    白木靖寛

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    Authorship:Coinvestigator(s) 

  29. 核スピン濃度と分布を制御した半導体超構造の作製と評価

    1997.4 - 1998.3

    科学研究費補助金  重点領域研究

    伊藤公平

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    Authorship:Coinvestigator(s) 

  30. 分極反転エピタクシーの研究と波長変換素子への応用

    1996.4 - 1999.3

    科学研究費補助金  基盤研究(A)

    伊藤良一

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    Authorship:Coinvestigator(s) 

  31. 新しい超構造を有する間接遷移型半導体の光学遷移に関する研究

    1996.4 - 1998.3

    科学研究費補助金  基盤研究(B)

    白木靖寛

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    Authorship:Coinvestigator(s) 

  32. 超微細構造半導体の結晶成長および配列制御に関する研究

    1996.4 - 1997.3

    科学研究費補助金  奨励研究(A)

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    Authorship:Principal investigator 

  33. 間接型半導体の量子マイクロ構造による光学遷移制御

    1994.4 - 1996.3

    科学研究費補助金  一般研究(B)

    白木靖寛

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    Authorship:Coinvestigator(s) 

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Industrial property rights 26

  1. 設計最適化装置、設計最適化方法、プログラムおよび記録媒体

    田中 博之,宇佐美 徳隆,沓掛 健太朗

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    Applicant:東海国立大学機構,理化学研究所

    Application no:2023-116245  Date applied:2023.7

  2. シリコン太陽電池の製造方法

    藩 伍根、宇佐美 徳隆、藤原 航三

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    Application no:2010-041228  Date applied:2010.2

    Announcement no:2011-179126 

    Country of applicant:Domestic  

  3. 太陽電池および太陽電池の製造方法

    宇佐美 徳隆、藩 伍根

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    Application no:2010-014654  Date applied:2010.1

    Announcement no:2011-154472 

    Country of applicant:Domestic  

  4. Si多結晶インゴット、Si多結晶インゴットの製造方法およびSi多結晶ウェハー

    中嶋 一雄、藤原 航三、宇佐美 徳隆

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    Application no:2008-231575  Date applied:2008.9

    Announcement no:2009-084145 

    Country of applicant:Domestic  

  5. Si結晶インゴットの製造方法

    中嶋 一雄、宇佐美 徳隆

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    Application no:2008-180842  Date applied:2008.7

    Announcement no:2009-173518 

    Country of applicant:Domestic  

  6. 太陽電池およびその製造方法並びにBaSi2層の成膜方法

    末益 崇、宇佐美 徳隆

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    Application no:2007-285876  Date applied:2007.11

    Announcement no:2009-115337 

    Country of applicant:Domestic  

  7. Siバルク多結晶インゴット

    藤原 航三、中嶋 一雄、宇佐美 徳隆

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    Application no:2007-208755  Date applied:2007.8

    Announcement no:2009-040641 

    Country of applicant:Domestic  

  8. 太陽電池用シリコン単結晶基板および太陽電池素子、並びにその製造方法

    喜田 道夫、藩 伍根、金子 恭二郎、中嶋 一雄、宇佐美 徳隆、藤原 航三

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    Application no:2006-256941  Date applied:2006.9

    Announcement no:2007-142370 

    Country of applicant:Domestic  

  9. 単結晶育成方法および装置

    中嶋 一雄、宍戸 統悦、宇佐美 徳隆、西村 博、長澤 亨

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    Application no:2005-340670  Date applied:2005.11

    Announcement no:2007-145629 

    Country of applicant:Domestic  

  10. 太陽電池およびその製造

    宇佐美 徳隆、中嶋 一雄、藤原 航三

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    Application no:2005-044025  Date applied:2005.2

    Announcement no:2006-229133 

    Country of applicant:Domestic  

  11. 太陽電池の製造方法

    横山 敬志、宇佐美 徳隆、藩 伍根、中嶋 一雄

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    Application no:2004-217356  Date applied:2004.7

    Announcement no:2006-041108 

    Country of applicant:Domestic  

  12. 結晶成長方法、及び結晶成長装置

    藤原 航三、中嶋 一雄、宇治原 徹、宇佐美 徳隆

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    Application no:2004-089326  Date applied:2004.3

    Announcement no:2005-272230 

    Country of applicant:Domestic  

  13. 水素生成光装置

    中嶋 一雄、宇佐美 徳隆、佐崎 元、宇治原 徹

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    Application no:2002-040388  Date applied:2002.2

    Announcement no:2003-238104 

    Country of applicant:Domestic  

  14. 粒界性格制御多結晶の作製方法

    宇佐美 徳隆、藤原 航三、中嶋 一雄

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    Announcement no:WO07004631 

    Country of applicant:Foreign country  

  15. 太陽電池及びその製造方法

    中嶋 一雄、宇佐美 徳隆、藤原 航三、宇治原 徹

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    Patent/Registration no:3472837  Date registered:2003.9 

    Country of applicant:Domestic  

  16. 多元系多結晶太陽電池及びその製造方法

    中嶋 一雄、宇佐美 徳隆、藤原 航三

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    Patent/Registration no:3472830  Date registered:2003.9 

    Country of applicant:Domestic  

  17. 液体拡散係数測定法

    宇治原 徹、藤原 航三、宇佐美 徳隆、中嶋 一雄

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    Patent/Registration no:3491042  Date registered:2003.11 

    Country of applicant:Domestic  

  18. 太陽電池

    宇治原 徹、宇佐美 徳隆、藤原 航三、中嶋 一雄

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    Patent/Registration no:3787629  Date registered:2006.4 

    Country of applicant:Domestic  

  19. 歪み半導体単結晶の作製方法

    宇佐美 徳隆、宇治原 徹、藤原 航三、中嶋 一雄

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    Patent/Registration no:3837527  Date registered:2006.8 

    Country of applicant:Domestic  

  20. Ge系結晶の成長方法、Ge系結晶、Ge系結晶基板及び太陽電池

    中嶋 一雄、藤原 航三、宇佐美 徳隆、宇治原 徹、我妻 幸長

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    Patent/Registration no:3855059  Date registered:2006.9 

    Country of applicant:Domestic  

  21. 光起電力素子、太陽電池、及び光起電力素子の製造方法

    宇佐美 徳隆、中嶋 一雄、宇治原 徹、藤原 航三

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    Patent/Registration no:3893466  Date registered:2006.12 

    Country of applicant:Domestic  

  22. Si薄膜の作製方法

    中嶋 一雄、宇佐美 徳隆、宇治原 徹、藤原 航三

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    Patent/Registration no:3978494  Date registered:2007.7 

    Country of applicant:Domestic  

  23. Si系結晶の製造方法

    中嶋 一雄、藤原 航三、宇佐美 徳隆、宇治原 徹、我妻 幸長

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    Patent/Registration no:4054873  Date registered:2007.12 

    Country of applicant:Domestic  

  24. 結晶成長方法、バルク単結晶成長用バルク予備結晶、及びバルク単結晶成長用バルク予備結晶の作製方法

    中嶋 一雄、我妻 幸長、宇佐美 徳隆、藤原 航三、宇治原 徹

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    Patent/Registration no:4122382  Date registered:2008.5 

    Country of applicant:Domestic  

  25. Siバルク多結晶インゴットの製造方法

    宇佐美 徳隆、中嶋 一雄、高橋 勲

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    Patent/Registration no:4528995  Date registered:2010.6 

    Country of applicant:Domestic  

  26. バルク多結晶材料の製造方法

    宇佐美 徳隆、藤原 航三、中嶋 一雄

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    Patent/Registration no:4923249  Date registered:2012.2 

    Country of applicant:Domestic  

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Teaching Experience (On-campus) 23

  1. 機能材料プロセス

    2020

  2. Materials Solid State Physics with Exercises

    2020

  3. Materials Quantum Chemistry

    2020

  4. マテリアル量子化学

    2019

  5. マテリアル固体物理2及び演習

    2019

  6. 機能材料プロセス

    2018

  7. マテリアル固体物理2及び演習

    2018

  8. 機能材料プロセス

    2017

  9. 電磁気学II

    2017

  10. 数学IIおよび演習

    2017

  11. 数学IIおよび演習

    2016

  12. 電磁気学II

    2016

  13. 半導体結晶工学特論

    2016

  14. 物質と材料の科学

    2016

  15. 数学IIおよび演習

    2015

  16. 電磁気学II

    2015

  17. フォトニクス材料工学特論

    2015

  18. 物質と材料の科学

    2015

  19. 電磁気学II

    2014

  20. 数学IIおよび演習

    2014

  21. 半導体結晶工学特論

    2014

  22. 物質と材料の科学

    2014

  23. 電磁気学II

    2013

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Teaching Experience (Off-campus) 5

  1. The Global Energy Expert Seminar

    2023.9 Korea University)

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    Level:Postgraduate  Country:Korea, Republic of

  2. ナノ流動学特論

    2022.8 Tohoku University)

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    Level:Postgraduate 

  3. ナノ流動学特論

    2021 Tohoku University)

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    Level:Postgraduate 

  4. ナノ流動学特論

    2020.4 - 2021.3 Tohoku University)

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    Level:Postgraduate 

  5. 最先端ナノ物性・ナノ工学特論

    2020.4 - 2021.3 University of Tsukuba)

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    Level:Postgraduate 

 

Social Contribution 16

  1. 大学セミナー 九州内高専および半導体材料デバイス研究ネットワーク全国24高専

    Role(s):Lecturer

    2023.12

  2. 大学セミナー 九州内高専および半導体材料デバイス研究ネットワーク全国24高専

    Role(s):Lecturer

    熊本高専  2022.10

  3. TV出演:New Technologies & Opportunities with SDGs

    Role(s):Appearance

    NHK World  2022.9

  4. 豊西総合大学

    Role(s):Lecturer

    愛知県立豊田西高等学校  2021.12

  5. 中部経済同友会×名古屋大学第2回勉強会

    Role(s):Lecturer

    2021.3

  6. 特別授業 愛知県立刈谷北高等学校

    Role(s):Lecturer

    愛知県立刈谷北高等学校  2020.10

  7. 出前講義 静岡県立磐田南高等学校

    Role(s):Lecturer

    2018.9

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    Audience: High school students

    Type:Visiting lecture

  8. 出前講義 静岡県立磐田南高等学校

    Role(s):Lecturer

    静岡県立磐田南高等学校  2017.9

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    Audience: High school students

    Type:Visiting lecture

  9. 公開講座「未来を拓くグリーンナノテクノロジー」

    Role(s):Lecturer

    東北大学流体科学研究所  2017.8

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    Audience: Graduate students, General

    Type:Lecture

  10. 出前講義 静岡県立静岡高等学校

    Role(s):Lecturer

    2017.6

  11. 出前講義 三重県立四日市高等学校

    Role(s):Lecturer

    三重県立四日市高等学校  2016.9

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    Audience: High school students

    Type:Visiting lecture

  12. 公開講座「地球の未来を拓くグリーンナノテクノロジー」

    Role(s):Lecturer

    東北大学流体科学研究所  2016.8

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    Audience: General

    Type:Lecture

  13. 公開講座「地球の未来を拓くグリーンナノテクノロジー」

    Role(s):Lecturer

    東北大学流体科学研究所  2015.8

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    Audience: Graduate students, General

  14. 出前講義 愛知県立一宮西高等学校

    2014.12

  15. 出前講義 愛知県立旭野高等学校

    2014.6

  16. みやぎ県民大学

    2013.8

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Media Coverage 39

  1. EtaVolt develops technology to ‘rejuvenate’ solar panels and AI method identifies new way to spot dislocations in polycrystalline materials. Internet

    optics.org  2024.1

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    Author:Other 

  2. AI reveals mysteries of polycrystalline materials Internet

    Tech Explorist  2023.12

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    Author:Other 

  3. 実験・計算・AIを融合した材料解析の新手法を構築=名大など Internet

    ASCII.jp×ビジネス  2023.12

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    Author:Other 

  4. L’intelligence artificielle révèle des structures cachées dans les matériaux polycristallins Internet

    Enerzine  2023.12

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    Author:Other 

  5. AI-Driven Discovery: Mysteries of Polycrystalline Materials Unraveled Internet

    SciTechDaily  2023.12

  6. AI unlocks secrets of polycrystalline materials Internet

    SC Online News  2023.12

  7. Synthetic intelligence unravels mysteries of polycrystalline supplies Internet

    T-Gate  2023.12

  8. Artificial intelligence unravels mysteries of polycrystalline materials Internet

    Phys.org  2023.12

  9. Artificial intelligence unravels mysteries of polycrystalline materials Internet

    EureckAlert  2023.12

  10. AI Deciphers Polycrystalline Materials Mysteries Internet

    Mirage News  2023.12

  11. Artificial intelligence unravels mysteries of polycrystalline materials Internet

    Bioengineer.org  2023.12

  12. Artificial intelligence unravels mysteries of polycrystalline materials Internet

    ScienMag  2023.12

  13. AI helps design better polycrystalline electronics: Study Internet

    Interesting Engineering  2023.12

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    Author:Other 

  14. 実験・計算・AIを融合した多結晶材料情報学によるマクロからナノへの材料解析手法を構築 ~複雑な多結晶の学理深化と革新材料創成の幕開け~ Internet

    Tii技術情報  2023.12

  15. Could AI unlock mysteries of polycrystalline materials? Internet

    Innovation News Network  2023.12

  16. AI helps design better polycrystalline electronics: Study Internet

    MSN  2023.12

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    Author:Other 

  17. AI Reveals New Path to Control Dislocations in Everyday Materials Internet

    AZO materials  2023.12

  18. Crystal Clear AI: Revolutionizing the Future of Electronics Manufacturing Internet

    SciTechDaily  2023.12

  19. AI-based technique for predicting crystal orientation improves the efficiency of manufacturing most electronic devices Internet

    nanowerk  2023.10

  20. AI-based technique for predicting crystal orientation improves the efficiency of manufacturing most electronic devices Internet

    AlphaGalileo  2023.10

  21. AI-based technique for predicting crystal orientation improves the efficiency of manufacturing most electronic devices Internet

    Today Headline  2023.7

  22. 名大など、AIで結晶粒方位分布を予測 多結晶材解析に Internet

    NIKKEI Tech Foresight  2023.6

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    Author:Other 

  23. 名大ら,結晶写真とAIで結晶粒方位分布を予測 Internet

    オプトエレクトロニクスオンライン  2023.5

  24. 結晶の写真からAIにより結晶粒方位分布を予測 ~多結晶材料の簡便かつ高速な組織解析に応用可能~ Internet

    Tii技術情報  2023.5

  25. 名古屋大学など、印刷でSiGe膜 太陽電池を低コスト化 Newspaper, magazine

    日本経済新聞  2022.10

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    Author:Other 

  26. 非真空の印刷法による高品質SiGe半導体の製造法、名大などが開発 Internet

    マイナビニュース  2022.9

  27. 名古屋大ら、高品質のSiGe半導体を印刷で実現 Internet

    EE Times Japan  2022.9

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