論文 - 中塚 理
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Doi, T; Takeuchi, W; Shibayama, S; Sakashita, M; Taoka, N; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月
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Miki, Y; Takeuchi, W; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月
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Kurosawa, M; Inaishi, Y; Tange, R; Sakashita, M; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月
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Senga, K; Shibayama, S; Sakashita, M; Zaima, S; Nakatsuka, O
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 頁: . 2019年
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Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) 査読有り
Pratiwi, ND; Handayani, M; Suryana, R; Nakatsuka, O
MATERIALS TODAY-PROCEEDINGS 13 巻 頁: 92 - 96 2019年
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Patterned Porous Silicon Prepared by Reactive Ion Etching Technique 査読有り
Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.
INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018 578 巻 2019年
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Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年
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Deng, YS; He, DS; Qiu, Y; Gu, R; He, JQ; Nakatsuka, O
APPLIED PHYSICS LETTERS 113 巻 ( 25 ) 2018年12月
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Ultra-thin germanium-tin on insulator structure through direct bonding technique 査読有り
Maeda, T; Chang, WH; Irisawa, T; Ishii, H; Oka, H; Kurosawa, M; Imai, Y; Nakatsuka, O; Uchida, N
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月
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Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月
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Jeon, J; Suzuki, A; Takahashi, K; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 12 ) 2018年12月
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Jeon, J; Suzuki, A; Nakatsuka, O; Zaima, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月
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Defect evaluation in strain-relaxed Ge<sub>0.947</sub>Sn<sub>0.053</sub> grown on (001) Si 査読有り
Gupta, S; Shimura, Y; Richard, O; Douhard, B; Simoen, E; Bender, H; Nakatsuka, O; Zaima, S; Loo, R; Heyns, M
APPLIED PHYSICS LETTERS 113 巻 ( 19 ) 2018年11月
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Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties 査読有り
Nakatsuka, O; Suzuki, A; McVittie, J; Nishi, Y; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月
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Yamamoto, T; Taoka, N; Ohta, A; Truyen, NX; Yamada, H; Takahashi, T; Ikeda, M; Makihara, K; Nakatsuka, O; Shimizu, M; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Suzuki, A; Nakatsuka, O; Sakashita, M; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
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Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S
APPLIED PHYSICS LETTERS 112 巻 ( 6 ) 2018年2月
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Ike, S; Takeuchi, W; Nakatsuka, O; Zaima, S
THIN SOLID FILMS 645 巻 頁: 57 - 63 2018年1月
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Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor 査読有り
Doi, T; Takeuchi, W; Jin, Y; Kokubun, H; Yasuhara, S; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月