研究者詳細 - 中塚理

論文 - 中塚理

分割表示 278 件中 21 - 40 件目／全件表示 >>

No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film 査読有り

Peng, Y; Zhu, SJ; Lai, HJ; Gao, J; Kurosawa, M; Nakatsuka, O; Tanemura, S; Peng, BL; Miao, L

JOURNAL OF MATERIOMICS 7 巻 ( 4 ) 頁： 665 - 671 2021年7月

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System 査読有り

Shibayama, S; Nagano, J; Asaka, K; Sakashita, M; Nakatsuka, O

ACS APPLIED ELECTRONIC MATERIALS 3 巻 ( 5 ) 頁： 2203 - 2211 2021年5月

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency 査読有り

Lai, HJ; Peng, Y; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) 頁： 58 - 60 2021年

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode 査読有り

Suwito, GR; Fukuda, M; Suprayoga, E; Ohtsuka, M; Hasdeo, EH; Nugraha, ART; Sakashita, M; Shibayama, S; Nakatsuka, O

APPLIED PHYSICS LETTERS 117 巻 ( 23 ) 2020年12月

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane 招待有り査読有り

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans. 98 巻頁： 169 - 176 2020年10月

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り査読有り

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans. 98 巻頁： 149 - 156 2020年10月

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping 査読有り

Peng, Y; Lai, HJ; Liu, CY; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Zaima, S; Tanemura, S; Miao, L

APPLIED PHYSICS LETTERS 117 巻 ( 5 ) 2020年8月

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing 査読有り

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1-xSnx epitaxial layers 査読有り

Jeon, J; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks 査読有り

Doi, T; Shibayama, S; Takeuchi, W; Sakashita, M; Taoka, N; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS LETTERS 116 巻 ( 22 ) 2020年6月

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer 査読有り

Hashimoto, K; Doi, T; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor 査読有り

Takeuchi, W; Kutsuki, K; Kagoshima, E; Onishi, T; Iwasaki, S; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation 査読有り

Peng, Y; Miao, L; Gao, J; Liu, CY; Kurosawa, M; Nakatsuka, O; Zaima, S

SCIENTIFIC REPORTS 9 巻 2019年10月

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications 招待有り査読有り

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. 92 巻 ( 4 ) 頁： 41-46 2019年10月

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate 査読有り

Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

119 巻 ( 96 ) 頁： 5-9 2019年6月

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報 119 巻 ( 96 ) 頁： 17-20 2019年6月

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process 査読有り

Takahashi, K; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S; Kurosawa, M

APPLIED PHYSICS EXPRESS 12 巻 ( 5 ) 2019年5月

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment 査読有り

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月

　前のページ - 次のページ　

<中塚 理>

論文 - 中塚 理

<中塚理>

論文 - 中塚理