研究者詳細 - 中塚理

論文 - 中塚理

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ゲルマニウムスズⅣ族混晶薄膜の結晶成長と電子物性招待有り査読有り

中塚理, 黒澤昌志

応用物理 88 巻 ( 9 ) 頁： pp. 597-603 2019年9月

Growth and applications of GeSn-related group-IV semiconductor materials 招待有り査読有り

S. Zaima, O. Nakatsuka, N. Taoka, M. Kuorsawa, W. Takeuchi, and M. Sakashita

Sci. Technol. Adv. Mater. 16 巻頁： 043502 (22pages) 2015年7月

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method 査読有り

Nagano, J; Ikeguchi, S; Doi, T; Sakashita, M; Nakatsuka, O; Shibayama, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 163 巻 2023年8月

Self-organized Ge1-x Sn x quantum dots formed on insulators and their room temperature photoluminescence 査読有り

Hashimoto, K; Shibayama, S; Asaka, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 7 ) 2023年7月

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り

Okada, K; Shibayama, S; Sakashita, M; Nakatsuka, O; Kurosawa, M

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 161 巻 2023年7月

Lattice-matched growth of high-Sn-content (x∼0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy 査読有り

Fujimoto, K; Kurosawa, M; Shibayama, S; Sakashita, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 16 巻 ( 4 ) 2023年4月

Crystalline and optoelectronic properties of Ge1-x Sn x /high-Si-content-Si y Ge1-x-y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy 査読有り

Zhang, SY; Shibayama, S; Nakatsuka, O

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 38 巻 ( 1 ) 2023年1月

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1-x-y Si x Sn y epitaxial layers grown on GaAs(001) 査読有り

Kurosawa, M; Nakata, M; Zhan, TZ; Tomita, M; Watanabe, T; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 8 ) 2022年8月

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments 査読有り

Itoh, M; Araidai, M; Ohta, A; Nakatsuka, O; Kurosawa, M

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface 査読有り

Kagoshima, E; Takeuchi, W; Kutsuki, K; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride 査読有り

Niwa, K; Iizuka, T; Kurosawa, M; Nakamura, Y; Valencia, HO; Kishida, H; Nakatsuka, O; Sasaki, T; Gaida, NA; Hasegawa, M

AIP ADVANCES 12 巻 ( 5 ) 2022年5月

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction 査読有り

Takeuchi, W; Kagoshima, E; Sumitani, K; Imai, Y; Shibayama, S; Sakashita, M; Kimura, S; Tomita, H; Nishiwaki, T; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators 査読有り

Oishi, R; Asaka, K; Bolotov, L; Uchida, N; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs 査読有り

Doi, T; Shibayama, S; Sakashital, M; Taokal, N; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 2 ) 2022年2月

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height 査読有り

Doi, T; Shibayama, S; Sakashita, M; Kojima, K; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 15 巻 ( 1 ) 2022年1月

Photoluminescence properties of heavily Sb doped Ge1-x Sn x and heterostructure design favorable for n+-Ge1-x Sn x active layer 査読有り

Zhang, SY; Fukuda, M; Jeon, J; Sakashita, M; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region 査読有り

Peng, Y; Miao, L; Liu, CY; Song, HL; Kurosawa, M; Nakatsuka, O; Back, SY; Rhyee, JS; Murata, M; Tanemura, S; Baba, T; Baba, T; Ishizaki, T; Mori, T

ADVANCED ENERGY MATERIALS 12 巻 ( 2 ) 2022年1月

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/n-Ge(001) Contacts 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻頁： 744 - 750 2022年

Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity 査読有り

Lai, HJ; Peng, Y; Gao, J; Song, HL; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

APPLIED PHYSICS LETTERS 119 巻 ( 11 ) 2021年9月

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion 査読有り

Doi, T; Shibayama, S; Sakashita, M; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 7 ) 2021年7月

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