講演・口頭発表等 - 中塚 理
-
Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack 国際会議
M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
-
Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy 国際会議
Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima
2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
-
Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits 招待有り 国際会議
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
The 228th Electrochemical Society Meeting
-
Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform 招待有り 国際会議
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
-
Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface 国際会議
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
-
Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer 国際会議
J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka and S. Zaima
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
-
Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge 国際会議
W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
-
Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects 国際会議
S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka and S. Zaima
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
-
Crystalline Structure and Chemical Reaction of Ti Thin Layer on Highly Oriented Pyrolytic Graphite 国際会議
O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima
Advanced Metallization Conference 2015: 25th Asian Session (ADMETA Plus 2015)
-
Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure 招待有り 国際会議
W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration
-
Reduction of Schottky barrier height with Sn/Ge contact 国際会議
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima
JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration
-
Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC 招待有り 国際会議
M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
-
Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
15th International Workshop on Junction Technology 2015 (IWJT 2015)
-
Formation of type-I energy band alignment of Ge1-x-ySixSny/Ge hetero structure 国際会議
T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima
The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
-
Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices 国際会議
M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
-
Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition 国際会議
Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
-
Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers 国際会議
T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
-
Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications 国際会議
M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
-
Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer 国際会議
W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima
7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference on Plasma-Nano Technology and Science (ISPlasma 2015 / IC-PLANTS 2015)
-
Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers 国際会議
H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference on Plasma-Nano Technology and Science (ISPlasma 2015 / IC-PLANTS 2015)